WO2018120327A1 - 有机发光器件及有机发光显示器 - Google Patents

有机发光器件及有机发光显示器 Download PDF

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WO2018120327A1
WO2018120327A1 PCT/CN2017/071329 CN2017071329W WO2018120327A1 WO 2018120327 A1 WO2018120327 A1 WO 2018120327A1 CN 2017071329 W CN2017071329 W CN 2017071329W WO 2018120327 A1 WO2018120327 A1 WO 2018120327A1
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bottom electrode
light emitting
organic
emitting device
organic light
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PCT/CN2017/071329
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English (en)
French (fr)
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江志雄
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深圳市华星光电技术有限公司
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Priority to US15/504,024 priority Critical patent/US10186678B2/en
Publication of WO2018120327A1 publication Critical patent/WO2018120327A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices

Definitions

  • the invention belongs to the field of electroluminescence technology, and in particular to an organic light emitting device and an organic light emitting display.
  • OLED Organic Light-Emitting Diode
  • organic light emitting diodes are composed of a multilayer structure having different functions.
  • the inherent properties of the materials used in each layer structure and their compatibility with the materials used in other layer structures are very important.
  • a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), an electron injection layer (EIL), and the like are generally included.
  • the drawback of employing such a multilayer structure is that the transport rate of the hole transport layer or the electron transport layer is low, and electrons and holes are generally difficult to maintain balance, resulting in lower device efficiency.
  • the electron transport layer is directly in contact with the top electrode. When the top electrode is made of a metal material, metal atoms easily enter the electron transport layer during the deposition process, becoming an exciton quenching center, which reduces device efficiency and lifetime.
  • an object of the present invention is to provide an organic light-emitting device capable of improving a transmission rate of a hole transport layer and/or an electron transport layer and capable of improving carrier balance and an organic organic light-emitting device having the same Illuminated display.
  • an organic light emitting device comprising: a substrate substrate; a bottom electrode over the substrate substrate; a top electrode opposite the bottom electrode and spaced apart from the bottom electrode; An organic electroluminescent element between the electrode and the top electrode; disposed on the top electrode and the organic electroluminescent element A buffer element between the intermediate and/or bottom electrode and the organic electroluminescent element for enhancing carrier balance and electron and/or hole transport properties.
  • the buffer element is made of a mixture of a P-type semiconductor material and an N-type semiconductor material.
  • the P-type semiconductor material comprises at least one of copper phthalocyanine, pentacene, tetracene, NPB, TPBI;
  • the N-type semiconductor material comprises C60, phthalic anhydride or sebacamide, molybdenum oxide At least one of them.
  • a mixing ratio of the P-type semiconductor material to the N-type semiconductor material is between 8:1 and 1:8.
  • the organic electroluminescent element sequentially includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer from the bottom electrode to the top electrode.
  • the organic electroluminescent element sequentially includes a hole transport layer and a light emitting layer from the bottom electrode to the top electrode. , an electron transport layer and an electron injection layer.
  • the organic electroluminescent element sequentially includes a hole injection layer and a hole transport from the bottom electrode to the top electrode. Layer, luminescent layer and electron transport layer.
  • the organic electroluminescent element when a buffer element is disposed between the top electrode and the organic electroluminescent element and between the bottom electrode and the organic electroluminescent element, the organic electroluminescent element is bottomed
  • the electrode to top electrode sequence includes a hole transport layer, a light emitting layer, and an electron transport layer.
  • one of the bottom electrode and the apex is transparent or translucent and the other is opaque and reflective.
  • an organic light emitting display comprising the above organic light emitting device.
  • carriers can be improved by providing a hole and/or electron transport property between a top electrode and an organic electroluminescence element and/or between a bottom electrode and an organic electroluminescence element.
  • a balanced buffer element to increase the luminous efficiency of the organic light emitting device.
  • FIG. 1 is a schematic structural view of an organic light emitting device according to a first embodiment of the present invention
  • FIG. 2 is a schematic structural view of an organic light emitting device according to a second embodiment of the present invention.
  • FIG. 3 is a schematic structural view of an organic light emitting device according to a third embodiment of the present invention.
  • FIG. 4 is a schematic structural view of an organic light emitting device according to a fourth embodiment of the present invention.
  • FIG. 5 is a schematic structural view of an organic light emitting device according to a fifth embodiment of the present invention.
  • Fig. 6 is a schematic structural view of an organic light emitting device according to a sixth embodiment of the present invention.
  • organic electroluminescent element refers to one or more organic layers between two electrodes that emit light at an applied voltage.
  • Fig. 1 is a schematic structural view of an organic light emitting device according to a first embodiment of the present invention.
  • an organic light emitting device includes a substrate substrate 100, a bottom electrode 210 on a substrate substrate 100, a top opposite to the bottom electrode 210 and spaced apart from the bottom electrode 210.
  • the 400 is also used to improve carrier balance (or carrier balance factor), thereby improving the luminous efficiency of the organic light-emitting device.
  • Substrate substrate 100 can be transparent or opaque.
  • the substrate substrate 100 has a light transmitting property for observing the light emission of the organic electroluminescent device through the substrate substrate 100.
  • Transparent glass or plastic is usually used in this case.
  • the substrate substrate 100 may be light transmissive, light absorbing or reflective for viewing the illumination of the organic electroluminescent device through the top electrode.
  • Materials for use in this case include, but are not limited to, glass, plastic, semiconductor materials, ceramics, circuit board materials, or any other suitable material.
  • the bottom electrode 210 is most typically provided as an anode.
  • the bottom electrode 210 is also a mirror.
  • the bottom electrode 210 may be made of a reflective metal and should be thin enough to have a partial transmittance at the wavelength of the emitted light, which is called a half.
  • the transparent, or bottom electrode 210 may be made of a transparent metal oxide such as indium tin oxide or zinc tin oxide.
  • the bottom electrode 210 can be made of a reflective metal and should be thick enough to be substantially opaque and to be a full mirror.
  • the top electrode 220 is most typically provided as a cathode.
  • the top electrode 220 is also a mirror.
  • the top electrode 220 may be made of a reflective metal and should be thin enough to have a partial transmittance at the wavelength of the emitted light, which is said to be translucent.
  • the top electrode 220 may be made of a transparent metal oxide such as indium tin oxide or zinc tin oxide.
  • the top electrode 220 can be made of a reflective metal and should be thick enough to be substantially opaque and to be a full mirror.
  • the organic electroluminescent element 300 includes, in order from the bottom electrode 210 to the top electrode 220, a hole injection layer (HIL) 310, a hole transport layer (HTL) 320, an emission layer (EML) 330, and an electron transport layer. (ETL) 340 and an electron injecting layer (EIL) 350; wherein the layer structures can be made of a suitable material and will not be described herein.
  • HIL hole injection layer
  • HTL hole transport layer
  • EML emission layer
  • EIL electron injecting layer
  • the buffer element 400 is made of a mixture of a P-type semiconductor material and an N-type semiconductor material, and the buffer element 400 has a high hole and electron concentration.
  • the blending ratio of the P-type semiconductor material to the N-type semiconductor material may be 8:1, 4:1, 3:1, 3:2, 1:1, 1:3, 2:3, 1:4, or 1:8. Wait.
  • P-type semiconductor materials include copper phthalocyanine, pentacene, tetracene, NPB (N, N'-diphenyl-N, N'-(1-naphthyl)-1,1'-biphenyl-4, At least one of 4'-diamine), TPBI (1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, etc.; N-type semiconductor material including C60, phthalic anhydride Or at least one of sebacamide, molybdenum oxide, and the like.
  • the buffering member 400 may form a buffer layer film in which a P-type semiconductor material and an N-type semiconductor material are blended by multiple simultaneous vapor deposition.
  • the P-type semiconductor material and the N-type semiconductor material may be formed into a blending solution, and the buffer layer film 400 may be prepared by solution processing.
  • Such a buffer element 400 having a hybrid system has an interaction between a P-type semiconductor and an N-type semiconductor throughout the buffer element 400 and at the interface.
  • the buffer element 400 can be applied to On the cathode side, electrons are more sufficiently transferred from the P-type semiconductor to the N-type semiconductor.
  • electrons accumulate on the N-type semiconductor side, and holes accumulate on the P-type semiconductor side. Under a certain voltage, electrons and holes are respectively directed.
  • the positive electrode and the negative electrode are transported, thereby forming a large current, increasing the electron current of the device, thereby facilitating the improvement of carrier balance, illuminance brightness and current efficiency, and because the buffer element 400 is added, the illuminating center is away from the electrode, and the metal ion is reduced.
  • the annihilation of excitons in contrast, can improve device efficiency.
  • the hole current of the device can be increased, thereby facilitating the improvement of carrier balance, luminance and current efficiency, and the principle is the same as described above.
  • FIG. 2 is a schematic structural view of an organic light emitting device according to a second embodiment of the present invention.
  • the structure of the organic light emitting device of the first embodiment shown in FIG. 1 is different in that the organic electroluminescent element 300 includes, in order from the bottom electrode 210 to the top electrode 220, a hole transport layer (HTL) 320, A light emitting layer (EML) 330, an electron transport layer (ETL) 340, and an electron injection layer (EIL) 350. That is, in the second embodiment, the hole injection layer (HIL) 310 can be omitted because the buffer element 400 also has a higher hole concentration, which can replace the function of the hole injection layer 310. effect.
  • HTL hole transport layer
  • EML electron transport layer
  • EIL electron injection layer
  • Fig. 3 is a schematic structural view of an organic light emitting device according to a third embodiment of the present invention.
  • the structure of the organic light emitting device of the first embodiment shown in FIG. 1 is different in that:
  • the buffering element 400 is located between the top electrode 220 and the organic electroluminescent element 300, and the buffering element 400 is also used to improve the transmission performance of electrons (or the transmission rate of electrons), and the buffering element 400 is also used to improve the current carrying capacity.
  • Sub-equilibrium or carrier balance factor
  • the buffer element 400 can also block metal atoms from entering the organic electroluminescent element 300 during deposition of the metal material, thereby avoiding organic electrochemistry caused by the quenching center of the metal atom.
  • the light-emitting element 300 is reduced in efficiency.
  • Fig. 4 is a schematic structural view of an organic light emitting device according to a fourth embodiment of the present invention.
  • the structure of the organic light emitting device of the third embodiment shown in FIG. 3 is different in that the organic electroluminescent element 300 includes, in order from the bottom electrode 210 to the top electrode 220, a hole injection layer (HIL) 310, A hole transport layer (HTL) 320, a light emitting layer (EML) 330, and an electron transport layer (ETL) 340. That is, in the fourth embodiment, the electron injection layer (EIL) 350 can be omitted because the buffer element 400 also has a higher electron concentration, which can replace the function of the electron injection layer (EIL) 350. effect.
  • HIL hole injection layer
  • HTL hole transport layer
  • EML light emitting layer
  • ETL electron transport layer
  • Fig. 5 is a schematic structural view of an organic light emitting device according to a fifth embodiment of the present invention.
  • the structure of the organic light emitting device of the first embodiment shown in FIG. 1 is different in that the buffer element 400 is also disposed between the top electrode 220 and the organic electroluminescent element 300, and the buffer element is provided.
  • the 400 is also used to improve the transmission performance of electrons (or the transmission rate of electrons), and the buffer element 400 is also used to improve carrier balance (or carrier balance coefficient), thereby improving the luminous efficiency of the organic light-emitting device.
  • the buffer element 400 can also block metal atoms from entering the organic electroluminescent element 300 during deposition of the metal material, thereby avoiding organic electrochemistry caused by the quenching center of the metal atom.
  • the light-emitting element 300 is reduced in efficiency.
  • Fig. 6 is a schematic structural view of an organic light emitting device according to a sixth embodiment of the present invention.
  • the structure of the organic light emitting device of the fifth embodiment shown in FIG. 5 is different in that the organic electroluminescent element 300 sequentially includes a hole transport layer (HTL) 320 from the bottom electrode 210 to the top electrode 220.
  • the hole injection layer (HIL) 310 and the electron injection layer (EIL) 350 may be omitted because the buffer element 400 also has a higher hole and electron concentration, which can replace the hole injection layer ( The functional role of HIL) 310 and electron injection layer (EIL) 350.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种有机发光器件，其包括：衬底基材(100)；位于衬底基材(100)之上的底电极(210)；与底电极(210)相对且与底电极(210)间隔开的顶电极(220)；位于底电极(210)和顶电极(220)之间的有机电致发光元件(300)；设置于顶电极(220)与有机电致发光元件(300)之间和/或底电极(210)与有机电致发光元件(300)之间的缓冲元件(400)，所述缓冲元件(400)用于提高载流子平衡以及电子和/或空穴的传输性能，从而提高有机发光器件的发光效率。

Description

有机发光器件及有机发光显示器 技术领域
本发明属于电致发光技术领域，具体地讲，涉及一种有机发光器件及有机发光显示器。
背景技术
近年来，有机发光二极管(Organic Light-Emitting Diode，OLED)成为国内外非常热门的新兴平面显示器产品，这是因为OLED显示器具有自发光、广视角(达175°以上)、短反应时间(1μs)、高发光效率、广色域、低工作电压(3～10V)、薄厚度(可小于1mm)、可制作大尺寸与可挠曲的面板及制程简单等特性，而且它还具有低成本的潜力。
目前，有机发光二极管由具有不同功能的多层结构组成。每层结构所采用材料的固有属性及其与其他层结构所采用材料的兼容性是非常重要的。在多层结构中，通常包括空穴注入层(HIL)、空穴传输层(HTL)、发光层(EML)、电子传输层(ETL)以及电子注入层(EIL)等。但是，采用这种多层结构的缺陷在于空穴传输层或者电子传输层的传输速率低，电子和空穴通常难以保持平衡，从而导致器件效率较低。另外，电子传输层直接与顶电极接触，当顶电极采用金属材料制成时，在沉积过程中，金属原子很容易进入电子传输层内部，成为激子猝灭中心，降低了器件效率以及寿命。
发明内容
为了解决上述的技术问题，本发明的目的在于提供一种能够提高空穴传输层和/或电子传输层的传输速率，并且能够提高载流子平衡的有机发光器件及具有该有机发光器件的有机发光显示器。
根据本发明的一方面，提供了一种有机发光器件，其包括：衬底基材；位于衬底基材之上的底电极；与底电极相对且与底电极间隔开的顶电极；位于底电极和顶电极之间的有机电致发光元件；设置于顶电极与有机电致发光元件之 间和/或底电极与有机电致发光元件之间的缓冲元件，所述缓冲元件用于提高载流子平衡以及电子和/或空穴的传输性能。
可选地，所述缓冲元件由P型半导体材料和N型半导体材料混合制成。
可选地，所述P型半导体材料包括酞菁铜、并五苯、并四苯、NPB、TPBI中的至少一种；所述N型半导体材料包括C60、苝酐或苝二酰胺、氧化钼中的至少一种。
可选地，所述P型半导体材料与所述N型半导体材料的混合比例介于8:1至1:8之间。
可选地，所述有机电致发光元件从底电极到顶电极顺序包括：空穴注入层、空穴传输层、发光层、电子传输层及电子注入层。
可选地，当仅在所述底电极与所述有机电致发光元件之间设置所述缓冲元件时，所述有机电致发光元件从底电极到顶电极顺序包括：空穴传输层、发光层、电子传输层及电子注入层。
可选地，当仅在所述顶电极与所述有机电致发光元件之间设置所述缓冲元件时所述有机电致发光元件从底电极到顶电极顺序包括：空穴注入层、空穴传输层、发光层及电子传输层。
可选地，当分别在所述顶电极与所述有机电致发光元件之间和所述底电极与所述有机电致发光元件之间设置缓冲元件时，所述有机电致发光元件从底电极到顶电极顺序包括：空穴传输层、发光层及电子传输层。
可选地，所述底电极和所述顶点极中的一个是透明的或半透明的，另一个是不透明且反射光的。
根据本发明的另一方面，又提供了一种有机发光显示器，其包括上述的有机发光器件。
本发明的有益效果：本发明通过在顶电极与有机电致发光元件之间和/或底电极与有机电致发光元件之间设置能够提高空穴和/或电子的传输性能能够提高载流子平衡的缓冲元件，以提高有机发光器件的发光效率。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1根据本发明的第一实施例的有机发光器件的结构示意图；
图2根据本发明的第二实施例的有机发光器件的结构示意图；
图3根据本发明的第三实施例的有机发光器件的结构示意图；
图4根据本发明的第四实施例的有机发光器件的结构示意图；
图5根据本发明的第五实施例的有机发光器件的结构示意图；
图6根据本发明的第六实施例的有机发光器件的结构示意图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中，为了清楚器件，夸大了层和区域的厚度。相同的标号在整个说明书和附图中表示相同的元器件。
有机电致发光元件(或称有机EL元件)是指处于两个电极之间的一个或多个有机层，它们在外加电压下发光。
图1根据本发明的第一实施例的有机发光器件的结构示意图。
参照图1，根据本发明的第一实施例的有机发光器件包括：衬底基材100、位于衬底基材100上的底电极210、与底电极210相对且与底电极210间隔开的顶电极220、位于底电极210和顶电极220之间的有机电致发光元件300以及位于底电极210与有机电致发光元件300之间的缓冲元件400，其中该缓冲元件400用于提高空穴的传输性能(或称空穴的传输速率)，并且该缓冲元件 400还用于提高载流子平衡(或载流子平衡系数)，从而提高有机发光器件的发光效率。
衬底基材100可以是透明的或者不透明的。对于通过衬底基材100观察有机电致发光组件发光来说，衬底基材100是具有透光性质。在此情况下通常使用透明玻璃或塑料。对于通过顶电极观察有机电致发光组件发光来说，衬底基材100的可以是透光的、吸光的或反光的。用于这种情况的材料包括但是不局限于玻璃、塑料、半导体材料、陶瓷、电路板材料或任何其它合适的材料。
底电极210最通常被设置为阳极。底电极210也是反光镜。当通过衬底基材100观察有机电致发光组件发光时，底电极210可以由反射性金属制成，并且应该足够薄以便在发射光的波长下具有部分透光率，这被称为是半透明的，或者底电极210可以由透明的金属氧化物制成，诸如氧化铟锡或氧化锌锡等。当通过顶电极观察有机电致发光组件发光时，底电极210可以由反射性金属制成，并且应该足够厚，以使其基本上是不透光的且是全反光镜。
顶电极220最通常被设置为阴极。顶电极220也是反光镜。当通过顶电极220观察有机电致发光组件发光时，顶电极220可以由反射性金属制成，并且应该足够薄以便在发射光的波长下具有部分透光率，这被称为是半透明的，或者顶电极220可以由透明的金属氧化物制成，诸如氧化铟锡或氧化锌锡等。当通过衬底基材100观察有机电致发光组件发光时，顶电极220可以由反射性金属制成，并且应该足够厚，以使其基本上是不透光的且是全反光镜。
在本实施例中，有机电致发光元件300从底电极210到顶电极220顺序包括：空穴注入层(HIL)310、空穴传输层(HTL)320、发光层(EML)330、电子传输层(ETL)340以及电子注入层(EIL)350；其中这些层结构可使用适当的材料制成，在此不再赘述。
缓冲元件400由P型半导体材料和N型半导体材料混合制成，并且缓冲元件400具有较高的空穴和电子浓度。
P型半导体材料与N型半导体材料的共混比例可以是8:1、4:1、3:1、3:2、1:1、1:3、2:3、1:4或1:8等。
P型半导体材料包括酞菁铜、并五苯、并四苯、NPB(N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺)、TPBI(1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯)等中的至少一种；N型半导体材料包括C60、苝酐或苝二酰胺、氧化钼等中的至少一种。
缓冲元件400可以通过多元同时蒸镀的方式形成P型半导体材料和N型半导体材料共混的缓冲层薄膜。若是可溶液加工的材料，还可以将P型半导体材料和N型半导体材料形成共混溶液，以溶液加工的方式制备该缓冲层薄膜400。
此种具有混合体系的缓冲元件400，在整个缓冲元件400内和界面处均存在P型半导体和N型半导体的相互作用，对于空穴占主导地位的有机器件，可将该缓冲元件400作用于阴极侧时，电子从P型半导体转移到N型半导体更加充分，这样，电子累积在N型半导体一侧，空穴累积在P型半导体一侧，在一定电压作用下，电子和空穴分别向正极和负极传输，进而形成较大的电流，提高器件的电子电流，从而利于提高载流子平衡，发光亮度和电流效率，而且由于缓冲元件400的加入，使得发光中心远离电极，减少了金属离子对激子的猝灭，相对的，可提升器件效率。
反之，对于电子占主导地位的有机器件，可将该缓冲元件400作用于阳极侧时，可提高器件的空穴电流，从而利于提高载流子平衡，发光亮度和电流效率，原理与上述相同。
图2根据本发明的第二实施例的有机发光器件的结构示意图。
参照图2，与图1所示的第一实施例的有机发光器件的结构不同之处在于：有机电致发光元件300从底电极210到顶电极220顺序包括：空穴传输层(HTL)320、发光层(EML)330、电子传输层(ETL)340以及电子注入层(EIL)350。也就是说，在第二实施例中，可以将空穴注入层(HIL)310省去，这是因为缓冲元件400中也具有较高的空穴浓度，其能够代替空穴注入层310的功能作用。
图3是根据本发明的第三实施例的有机发光器件的结构示意图。
参照图3，与图1所示的第一实施例的有机发光器件的结构不同之处在于： 缓冲元件400位于顶电极220与有机电致发光元件300之间，并且该缓冲元件400还用于提高电子的传输性能(或称电子的传输速率)，并且该缓冲元件400还用于提高载流子平衡(或载流子平衡系数)，从而提高有机发光器件的发光效率。
这里，当顶电极220采用金属材料制作时，该缓冲元件400还可在沉积金属材料的过程中阻挡金属原子进入有机电致发光元件300中，避免了由金属原子猝灭中心引起的有机电致发光元件300效率降低。
图4根据本发明的第四实施例的有机发光器件的结构示意图。
参照图4，与图3所示的第三实施例的有机发光器件的结构不同之处在于：有机电致发光元件300从底电极210到顶电极220顺序包括：空穴注入层(HIL)310、空穴传输层(HTL)320、发光层(EML)330及电子传输层(ETL)340。也就是说，在第四实施例中，可以将电子注入层(EIL)350省去，这是因为缓冲元件400中也具有较高的电子浓度，其能够代替电子注入层(EIL)350的功能作用。
图5是根据本发明的第五实施例的有机发光器件的结构示意图。
参照图5，与图1所示的第一实施例的有机发光器件的结构不同之处在于：在顶电极220与有机电致发光元件300之间也设置所述缓冲元件400，并且该缓冲元件400还用于提高电子的传输性能(或称电子的传输速率)，并且该缓冲元件400还用于提高载流子平衡(或载流子平衡系数)，从而提高有机发光器件的发光效率。
这里，当顶电极220采用金属材料制作时，该缓冲元件400还可在沉积金属材料的过程中阻挡金属原子进入有机电致发光元件300中，避免了由金属原子猝灭中心引起的有机电致发光元件300效率降低。
图6根据本发明的第六实施例的有机发光器件的结构示意图。
参照图6，与图5所示的第五实施例的有机发光器件的结构不同之处在于：有机电致发光元件300从底电极210到顶电极220顺序包括：空穴传输层(HTL)320、发光层(EML)330及电子传输层(ETL)340。也就是说，在第六实施 例中，可以将空穴注入层(HIL)310和电子注入层(EIL)350省去，这是因为缓冲元件400中也具有较高的空穴和电子浓度，其能够代替空穴注入层(HIL)310和电子注入层(EIL)350的功能作用。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (16)

  1. 一种有机发光器件，其中，包括：
    衬底基材；
    位于衬底基材之上的底电极；
    与底电极相对且与底电极间隔开的顶电极；
    位于底电极和顶电极之间的有机电致发光元件；
    设置于顶电极与有机电致发光元件之间和/或底电极与有机电致发光元件之间的缓冲元件，所述缓冲元件用于提高载流子平衡以及电子和/或空穴的传输性能。
  2. 根据权利要求1所述的有机发光器件，其中，所述缓冲元件由P型半导体材料和N型半导体材料混合制成。
  3. 根据权利要求2所述的有机发光器件，其中，所述P型半导体材料包括酞菁铜、并五苯、并四苯、NPB、TPBI中的至少一种；所述N型半导体材料包括C60、苝酐或苝二酰胺、氧化钼中的至少一种。
  4. 根据权利要求2所述的有机发光器件，其中，所述P型半导体材料与所述N型半导体材料的混合比例介于8:1至1:8之间。
  5. 根据权利要求1所述的有机发光器件，其中，所述有机电致发光元件从底电极到顶电极顺序包括：空穴注入层、空穴传输层、发光层、电子传输层及电子注入层。
  6. 根据权利要求2所述的有机发光器件，其中，所述有机电致发光元件从底电极到顶电极顺序包括：空穴注入层、空穴传输层、发光层、电子传输层及电子注入层。
  7. 根据权利要求1所述的有机发光器件，其中，当仅在所述底电极与所 述有机电致发光元件之间设置所述缓冲元件时，所述有机电致发光元件从底电极到顶电极顺序包括：空穴传输层、发光层、电子传输层及电子注入层。
  8. 根据权利要求2所述的有机发光器件，其中，当仅在所述底电极与所述有机电致发光元件之间设置所述缓冲元件时，所述有机电致发光元件从底电极到顶电极顺序包括：空穴传输层、发光层、电子传输层及电子注入层。
  9. 根据权利要求1所述的有机发光器件，其中，当仅在所述顶电极与所述有机电致发光元件之间设置所述缓冲元件时所述有机电致发光元件从底电极到顶电极顺序包括：空穴注入层、空穴传输层、发光层及电子传输层。
  10. 根据权利要求2所述的有机发光器件，其中，当仅在所述顶电极与所述有机电致发光元件之间设置所述缓冲元件时所述有机电致发光元件从底电极到顶电极顺序包括：空穴注入层、空穴传输层、发光层及电子传输层。
  11. 根据权利要求1所述的有机发光器件，其中，当分别在所述顶电极与所述有机电致发光元件之间和所述底电极与所述有机电致发光元件之间设置缓冲元件时，所述有机电致发光元件从底电极到顶电极顺序包括：空穴传输层、发光层及电子传输层。
  12. 根据权利要求2所述的有机发光器件，其中，当分别在所述顶电极与所述有机电致发光元件之间和所述底电极与所述有机电致发光元件之间设置缓冲元件时，所述有机电致发光元件从底电极到顶电极顺序包括：空穴传输层、发光层及电子传输层。
  13. 根据权利要求1所述的有机发光器件，其中，所述底电极和所述顶点极中的一个是透明的或半透明的，另一个是不透明且反射光的。
  14. 根据权利要求2所述的有机发光器件，其中，所述底电极和所述顶点极中的一个是透明的或半透明的，另一个是不透明且反射光的。
  15. 一种有机发光显示器，包括有机发光器件，其中，所述有机发光器件包括：
    衬底基材；
    位于衬底基材之上的底电极；
    与底电极相对且与底电极间隔开的顶电极；
    位于底电极和顶电极之间的有机电致发光元件；
    设置于顶电极与有机电致发光元件之间和/或底电极与有机电致发光元件之间的缓冲元件，所述缓冲元件用于提高载流子平衡以及电子和/或空穴的传输性能。
  16. 根据权利要求15所述的有机发光显示器，其中，所述缓冲元件由P型半导体材料和N型半导体材料混合制成。
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