WO2018040476A1 - Die-bonding glue and photoelectric element packaging structure - Google Patents

Die-bonding glue and photoelectric element packaging structure Download PDF

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Publication number
WO2018040476A1
WO2018040476A1 PCT/CN2017/070845 CN2017070845W WO2018040476A1 WO 2018040476 A1 WO2018040476 A1 WO 2018040476A1 CN 2017070845 W CN2017070845 W CN 2017070845W WO 2018040476 A1 WO2018040476 A1 WO 2018040476A1
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Prior art keywords
refractive index
glue
die bonding
chip
die
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PCT/CN2017/070845
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French (fr)
Chinese (zh)
Inventor
尤君平
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肥城芯联新材料科技有限公司
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Publication of WO2018040476A1 publication Critical patent/WO2018040476A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the invention relates to the technical field of photovoltaic elements, in particular to a solid crystal glue and a photovoltaic element package structure using the same.
  • the existing photovoltaic device package structure includes a package adhesive, a chip and a die bonding glue, and the chip has a sapphire or silicon carbide substrate.
  • the refractive index of the encapsulant is 1.4 to 1.6
  • the refractive index of the sapphire substrate is 1.7
  • the refractive index of silicon carbide is 2.7.
  • the refractive index of the currently widely used solid crystal glue is 1.4 ⁇ 1.55.
  • the light emitted by the photoelectric element is spread at the interface where the sapphire or silicon carbide substrate is bonded to the solid crystal glue, and the interface between the solid crystal glue and the encapsulant is connected. The direction changes, resulting in low light extraction efficiency of the photovoltaic element package structure.
  • the main object of the present invention is to provide a solid crystal glue, which aims to solve the technical problem of low light extraction efficiency of the photovoltaic element package structure.
  • the present invention provides a die bonding adhesive comprising a matrix, wherein the refractive adhesive has a refractive index of 1.4 to 2.7.
  • the substrate is at least one of a phenyl group-containing silicone resin, a phenyl group-containing acrylic resin, and a phenyl group-containing epoxy resin.
  • the die bonding glue further comprises a plurality of fillers, the filler being housed in the substrate, the filler comprising at least one of boron nitride, titanium dioxide, silicon dioxide and zirconium dioxide.
  • the filler has a diameter of 20 to 1000 nm, and the filler has a thermal conductivity of 10 to 40. W/(m*K), the filler has a refractive index of 1.4 to 2.7, and the solid crystal glue has a refractive index of 1.4 to 2.7.
  • the solid crystal glue has a thickness of 1 to 20 ⁇ m.
  • the invention also provides a photovoltaic element package structure, comprising a bracket, a reflective coating disposed on the bracket, a chip and an encapsulant, the optoelectronic component encapsulation structure further comprising the solid crystal glue, the solid crystal glue Partially covering the reflective coating layer, the chip portion is received in the solid crystal glue, and partially reveals the solid crystal glue, and the encapsulant covers the reflective coating layer not covering the solid crystal glue a region and wrapping a portion of the chip that exposes the die bond.
  • the chip comprises a substrate
  • the refractive index of the bonding adhesive is equal to the refractive index of the encapsulant
  • the refractive index of the bonding adhesive is equal to the refractive index of the substrate
  • the solid The refractive index of the crystal glue is between the encapsulant and the substrate.
  • the present invention also provides another optoelectronic device package structure comprising a holder, a chip and an encapsulant, the chip being coated with a reflective coating, the optoelectronic component encapsulation structure further comprising the method of any one of claims 1-5 a solid crystal glue partially covering the holder, the chip portion being received in the die bonding glue and partially exposing the die bonding glue, the reflective coating film being located at the bottom of the chip, and Accommodating the solid crystal glue, the encapsulant covers a region where the stent is not covered with the die bonding glue, and encloses a chip partially exposing the die bonding glue.
  • the refractive index of the solid glue is equal to the refractive index of the encapsulant.
  • the invention also proposes a photovoltaic element package structure comprising the solid crystal glue.
  • the refractive index of the solid crystal glue of the technical solution of the present invention is 1.4 to 2.7. Since the solid crystal glue has a better refractive index, the photovoltaic element package structure using the die bonding glue has better light extraction efficiency.
  • FIG. 1 is a schematic view showing a package structure of a photovoltaic element according to the present invention
  • FIG. 2 is a schematic view showing another package structure of a photovoltaic element according to the present invention.
  • Label name Label name 100 Photoelectric component package structure 30 support 200 Another optoelectronic component package structure 50 Reflective coating 10 Solid crystal glue 70 chip 20 Reflective coating 90 Packaging adhesive
  • the invention provides a solid crystal glue comprising a matrix, wherein the solid crystal glue has a refractive index of 1.4 to 2.7.
  • the refractive index of the solid crystal glue of the technical solution of the present invention is 1.4 to 2.7. Since the solid crystal glue has a better refractive index, the photovoltaic element package structure using the die bonding glue has better light extraction efficiency.
  • the substrate is at least one of a phenyl group-containing silicone resin, a phenyl group-containing acrylic resin, and a phenyl group-containing epoxy resin.
  • the silicone resin, the acrylic resin and the epoxy resin used in the technical solution of the present invention all contain a phenyl group, which improves the refractive index of the solid crystal glue, thereby improving the light extraction efficiency of the photovoltaic element package structure.
  • the die bonding glue may further comprise a plurality of fillers, the filler being housed in the substrate, the filler comprising at least one of boron nitride, titanium dioxide, silicon dioxide and zirconium dioxide.
  • the solid crystal glue of the technical solution of the present invention contains at least one of boron nitride, titanium dioxide, silicon dioxide and zirconium dioxide, so that the solid crystal glue has a better refractive index, thereby effectively improving the application of the filler-containing filler.
  • the light-emitting efficiency of the photovoltaic element package structure of the solid crystal glue boron nitride, titanium dioxide, silicon dioxide and zirconium dioxide have high thermal conductivity, which enhances the thermal conductivity of the solid-state adhesive containing the filler, and is advantageous for improving the photovoltaic component packaging structure using the solid-state adhesive containing the filler. Thermal performance.
  • the filler has a diameter of 20 to 1000 nm, and the diameter refers to a diameter of a ball having the same volume as the corresponding filler.
  • the filler member does not have to have a spherical shape, and the shape may be spherical or non-spherical.
  • the filling element has a thermal conductivity of 10 ⁇ 40 W/(m*K), the filler has a refractive index of 1.4 to 2.7, and the solid crystal glue has a refractive index of 1.4 to 2.7.
  • the filling member has a heat conducting function, and the heat conduction is transmitted through the phonon.
  • the thickness of the solid crystal glue of the piece is increased, so that the thermal resistance of the solid crystal glue containing the filler is increased, which is disadvantageous for heat conduction.
  • the diameter of the filler is set to 20 ⁇ 1000nm, which can ensure the high thermal conductivity of the solid crystal adhesive containing the filler.
  • the high thermal conductivity of the filler member is beneficial to increase the thermal conductivity of the solid crystal adhesive containing the filler, thereby improving the heat dissipation performance of the photovoltaic component package structure.
  • the refractive index of the filler is 1.4 ⁇ 2.7, so that the refractive index of the solid crystal adhesive containing the filler is 1.4 ⁇ 2.7, which improves the light extraction efficiency of the photovoltaic component package using the die bonding adhesive.
  • the solid crystal glue has a thickness of 1 to 20 ⁇ m, preferably 3 to 8 ⁇ m.
  • the thermal resistance is equal to the product of the thermal conductivity and the thickness, and the smaller the thickness of the solid crystal glue, the better the thermal conductivity of the solid crystal glue; the thickness of the solid crystal glue is too small to affect the mechanical strength of the solid crystal glue.
  • the thickness of the solid crystal glue is set to 1 to 20 ⁇ m, preferably 3 to 8 ⁇ m, the solid crystal glue has reliable mechanical strength and can ensure high thermal conductivity of the solid crystal glue.
  • the present invention also provides a photovoltaic device package structure 100 including a support 30, a reflective coating 50 disposed on the support 30, a chip 70, and an encapsulant 90.
  • the optoelectronic device package structure 100 further includes the die bond.
  • the glue 10 is partially covered by the reflective coating 50, and the chip 70 is partially accommodated in the die bonding glue 10, and partially exposes the die bonding glue 10, and the sealing glue 90 covers
  • the reflective coating 50 is not covered by the region of the die bond 10 and partially encloses the chip 70 of the die bond 10.
  • the chip 70 is partially accommodated in the die bonding glue 10, and the chip 70 is firmly disposed in the die bonding glue 10. Since the substrate of the chip 70 has no reflective coating, the light emitted by the chip 70 directly illuminates the reflective coating 50, and the light is reflected by the reflective coating 50. The reflected light enters the solid glue 10 through the substrate of the chip 70, and then the solid glue 10 enters the encapsulant 90. According to Fresnel's law, since the solid crystal adhesive 10 has an appropriate refractive index, the light propagation direction is at the interface between the substrate of the chip 70 and the bonding adhesive 10, and the bonding adhesive 10 and the package.
  • the interface where the glue 90 is connected does not change, thereby improving the light extraction efficiency of the photovoltaic element package structure 100.
  • the solid crystal glue contains a filler, it has good thermal conductivity and has a better refractive index, which effectively improves the light scattering characteristics of the optoelectronic package structure 100 and further increases the light extraction efficiency.
  • the chip 70 includes a substrate (not shown), the refractive index of the bonding adhesive 10 is equal to the refractive index of the encapsulant 90, or the refractive index of the bonding adhesive 10 is equal to the lining
  • the refractive index of the bottom, or the refractive index of the die bond 10 is between the refractive index of the encapsulant 90 and the refractive index of the substrate.
  • the substrate of the chip 70 has no reflective coating, and the reflective coating 50 can replace the function of the reflective coating.
  • the light emitted by the chip 70 directly hits the reflective coating 50 on the bracket 30 and is reflected outward.
  • the refractive index of the solid crystal glue 10 should approach the refractive index of the chip 70 or the encapsulant 90, and the light extraction efficiency can reach a maximum value.
  • the refractive index of the bonding adhesive 10 is equal to the refractive index of the encapsulant 90, or the refractive index of the bonding adhesive 10 is equal to the refractive index of the substrate, or the refractive index of the bonding adhesive 10
  • the direction of propagation of the optoelectronic component package structure 100 is prevented from being changed, thereby effectively improving the light extraction efficiency of the optoelectronic component package structure 100.
  • the present invention also provides a photovoltaic device package structure 200 comprising a holder, a chip and an encapsulant, the chip being coated with a reflective coating 20, which may be a metal reflective layer, a Bragg diffraction reflective layer, an omnidirectional reflective layer or A metal-insulator hybrid reflective layer, the photovoltaic element package structure further comprising the die bonding glue 10 according to any one of claims 1 to 5, the die bonding glue 10 partially covering the holder, the chip portion The solid crystal glue 10 is partially exposed, and the solid crystal glue 10 is partially exposed.
  • the reflective coating film 20 is located at the bottom of the chip and is accommodated in the die bonding glue 10, and the encapsulant covers the bracket. The region of the die bond 10 is covered, and a portion of the chip exposing the die bond 10 is wrapped.
  • the chip portion is accommodated in the die bonding glue 10, so that the die bonding glue 10 can fix the chip well.
  • the chip is coated with a reflective coating film 20, and when the light emitted from the chip is irradiated downward to the reflective coating film 20, the light is reflected by the reflective coating film 20 and propagates upward, thereby improving the light extraction efficiency of the photovoltaic element package structure 200.
  • the refractive index of the die bond 10 is equal to the refractive index of the encapsulant (not shown).
  • the chip substrate has a reflective coating film 20, The light is directly reflected into the chip.
  • the refractive index of the solid glue 10 approaches the refractive index of the encapsulant, and the light-emitting efficiency of the optoelectronic component package structure 200 can reach maximum.
  • the present invention also provides a photovoltaic element package structure (not shown) including the die bond adhesive 10.
  • the optoelectronic component package structure can be a chip package, a filament package, an integrated package or a package package. Since all the technical solutions of all the above embodiments are adopted in the present invention, at least all the beneficial effects brought about by the technical solutions of the foregoing embodiments are not described herein.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Led Device Packages (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A die-bonding glue (10), comprising a base body. The refractive index of the die-bonding glue (10) is 1.4 to 2.7. The die-bonding glue (10) is applied to a photoelectric element packaging structure (100). The photoelectric element packaging structure (100) has a better light extraction efficiency.

Description

固晶胶及光电元件封装结构  Solid crystal adhesive and photoelectric component package structure
技术领域Technical field
本发明涉及光电元件技术领域，尤其涉及固晶胶及应用该固晶胶的光电元件封装结构。The invention relates to the technical field of photovoltaic elements, in particular to a solid crystal glue and a photovoltaic element package structure using the same.
背景技术Background technique
现有的光电元件封装结构包括封装胶、芯片及固晶胶，芯片具有蓝宝石或碳化硅衬底。封装胶的折射率为1.4~1.6，蓝宝石衬底的折射率为1.7，碳化硅的折射率为2.7。然而，目前广泛应用的固晶胶的折射率为1.4~1.55，光电元件发出的光在蓝宝石或碳化硅衬底与固晶胶相接的界面、固晶胶与封装胶相接的界面的传播方向会发生改变，导致光电元件封装结构的出光效率低。The existing photovoltaic device package structure includes a package adhesive, a chip and a die bonding glue, and the chip has a sapphire or silicon carbide substrate. The refractive index of the encapsulant is 1.4 to 1.6, the refractive index of the sapphire substrate is 1.7, and the refractive index of silicon carbide is 2.7. However, the refractive index of the currently widely used solid crystal glue is 1.4~1.55. The light emitted by the photoelectric element is spread at the interface where the sapphire or silicon carbide substrate is bonded to the solid crystal glue, and the interface between the solid crystal glue and the encapsulant is connected. The direction changes, resulting in low light extraction efficiency of the photovoltaic element package structure.
发明内容Summary of the invention
本发明的主要目的在于提供一种固晶胶，旨在解决光电元件封装结构的出光效率低的技术问题。The main object of the present invention is to provide a solid crystal glue, which aims to solve the technical problem of low light extraction efficiency of the photovoltaic element package structure.
为实现上述目的，本发明提供一种固晶胶，包含基体，所述固晶胶的折射率为1.4~2.7。In order to achieve the above object, the present invention provides a die bonding adhesive comprising a matrix, wherein the refractive adhesive has a refractive index of 1.4 to 2.7.
优选地，所述基体为含苯基的硅树脂、含苯基的丙烯酸树脂及含苯基的环氧树脂中的至少一种。Preferably, the substrate is at least one of a phenyl group-containing silicone resin, a phenyl group-containing acrylic resin, and a phenyl group-containing epoxy resin.
优选地，所述固晶胶还包含若干填充件，所述填充件容纳于所述基体，所述填充件含有氮化硼、二氧化钛、二氧化硅及二氧化锆中的至少一种。Preferably, the die bonding glue further comprises a plurality of fillers, the filler being housed in the substrate, the filler comprising at least one of boron nitride, titanium dioxide, silicon dioxide and zirconium dioxide.
优选地，所述填充件的直径为20~1000nm，所述填充件的导热系数为10~40 W/(m*K)，所述填充件的折射率为1.4~2.7，所述固晶胶的折射率为1.4~2.7。Preferably, the filler has a diameter of 20 to 1000 nm, and the filler has a thermal conductivity of 10 to 40. W/(m*K), the filler has a refractive index of 1.4 to 2.7, and the solid crystal glue has a refractive index of 1.4 to 2.7.
优选地，所述固晶胶的厚度为1~20μm。Preferably, the solid crystal glue has a thickness of 1 to 20 μm.
本发明还提出一种光电元件封装结构，其包括支架、设置于所述支架的反射涂层、芯片及封装胶，所述光电元件封装结构还包括所述的固晶胶，所述固晶胶部分覆盖于所述反射涂层，所述芯片部分容纳于所述固晶胶，并部分显露出所述固晶胶，所述封装胶覆盖所述反射涂层未被覆盖所述固晶胶的区域，并包裹部分露出所述固晶胶的芯片。The invention also provides a photovoltaic element package structure, comprising a bracket, a reflective coating disposed on the bracket, a chip and an encapsulant, the optoelectronic component encapsulation structure further comprising the solid crystal glue, the solid crystal glue Partially covering the reflective coating layer, the chip portion is received in the solid crystal glue, and partially reveals the solid crystal glue, and the encapsulant covers the reflective coating layer not covering the solid crystal glue a region and wrapping a portion of the chip that exposes the die bond.
优选地，所述芯片包括衬底，所述固晶胶的折射率相等于所述封装胶的折射率，或所述固晶胶的折射率等于所述衬底的折射率，或所述固晶胶的折射率介于所述封装胶与所述衬底之间。 Preferably, the chip comprises a substrate, the refractive index of the bonding adhesive is equal to the refractive index of the encapsulant, or the refractive index of the bonding adhesive is equal to the refractive index of the substrate, or the solid The refractive index of the crystal glue is between the encapsulant and the substrate.
本发明还提出另一种光电元件封装结构，其包括支架、芯片及封装胶，所述芯片涂覆有反射镀膜，所述光电元件封装结构还包括如权利要求1-5中任一项所述的固晶胶，所述固晶胶部分覆盖于所述支架，所述芯片部分容纳于所述固晶胶，并部分显露出所述固晶胶，所述反射镀膜位于所述芯片底部，并容纳于所述固晶胶，所述封装胶覆盖所述支架未被覆盖所述固晶胶的区域，并包裹部分露出所述固晶胶的芯片。The present invention also provides another optoelectronic device package structure comprising a holder, a chip and an encapsulant, the chip being coated with a reflective coating, the optoelectronic component encapsulation structure further comprising the method of any one of claims 1-5 a solid crystal glue partially covering the holder, the chip portion being received in the die bonding glue and partially exposing the die bonding glue, the reflective coating film being located at the bottom of the chip, and Accommodating the solid crystal glue, the encapsulant covers a region where the stent is not covered with the die bonding glue, and encloses a chip partially exposing the die bonding glue.
优选地，所述固晶胶的折射率等于所述封装胶的折射率。Preferably, the refractive index of the solid glue is equal to the refractive index of the encapsulant.
本发明还提出一种光电元件封装结构，其包括所述的固晶胶。The invention also proposes a photovoltaic element package structure comprising the solid crystal glue.
本发明技术方案的固晶胶的折射率为1.4~2.7，由于固晶胶具有较佳的折射率，使得应用该固晶胶的光电元件封装结构具有较佳的出光效率。The refractive index of the solid crystal glue of the technical solution of the present invention is 1.4 to 2.7. Since the solid crystal glue has a better refractive index, the photovoltaic element package structure using the die bonding glue has better light extraction efficiency.
附图说明DRAWINGS
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below. Obviously, the drawings in the following description are only It is a certain embodiment of the present invention, and those skilled in the art can obtain other drawings according to the structures shown in the drawings without any creative work.
图1为本发明一光电元件封装结构示意图；1 is a schematic view showing a package structure of a photovoltaic element according to the present invention;
图2为本发明另一光电元件封装结构示意图。2 is a schematic view showing another package structure of a photovoltaic element according to the present invention.
附图标号说明：Description of the reference numerals:
标号Label 名称name 标号Label 名称name
100100 一光电元件封装结构Photoelectric component package structure 3030 支架support
200200 另一光电元件封装结构Another optoelectronic component package structure 5050 反射涂层Reflective coating
1010 固晶胶Solid crystal glue 7070 芯片chip
2020 反射镀膜Reflective coating 9090 封装胶Packaging adhesive
本发明目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。The implementation, functional features, and advantages of the present invention will be further described in conjunction with the embodiments.
具体实施方式detailed description
下面将对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention are clearly and completely described below. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
另外，各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本发明要求的保护范围之内。In addition, the technical solutions between the various embodiments may be combined with each other, but must be based on the realization of those skilled in the art, and when the combination of the technical solutions is contradictory or impossible to implement, it should be considered that the combination of the technical solutions does not exist. It is also within the scope of protection required by the present invention.
本发明提供一种固晶胶，包含基体，所述固晶胶的折射率为1.4~2.7。The invention provides a solid crystal glue comprising a matrix, wherein the solid crystal glue has a refractive index of 1.4 to 2.7.
本发明技术方案的固晶胶的折射率为1.4~2.7，由于固晶胶具有较佳的折射率，使得应用该固晶胶的光电元件封装结构具有较佳的出光效率。The refractive index of the solid crystal glue of the technical solution of the present invention is 1.4 to 2.7. Since the solid crystal glue has a better refractive index, the photovoltaic element package structure using the die bonding glue has better light extraction efficiency.
优选地，所述基体为含苯基的硅树脂、含苯基的丙烯酸树脂及含苯基的环氧树脂中的至少一种。Preferably, the substrate is at least one of a phenyl group-containing silicone resin, a phenyl group-containing acrylic resin, and a phenyl group-containing epoxy resin.
本发明技术方案所采用的硅树脂、丙烯酸树脂及环氧树脂中均含有苯基，提高固晶胶的折射率，从而提高光电元件封装结构的出光效率。The silicone resin, the acrylic resin and the epoxy resin used in the technical solution of the present invention all contain a phenyl group, which improves the refractive index of the solid crystal glue, thereby improving the light extraction efficiency of the photovoltaic element package structure.
优选地，所述固晶胶还可包含若干填充件，所述填充件容纳于所述基体，所述填充件含有氮化硼、二氧化钛、二氧化硅及二氧化锆中的至少一种。Preferably, the die bonding glue may further comprise a plurality of fillers, the filler being housed in the substrate, the filler comprising at least one of boron nitride, titanium dioxide, silicon dioxide and zirconium dioxide.
本发明技术方案的固晶胶中含有氮化硼、二氧化钛、二氧化硅及二氧化锆的至少一种，使得固晶胶具有较佳的的折射率，从而有效提高了应用该包含填充件的固晶胶的光电元件封装结构的出光效率。另外，氮化硼、二氧化钛、二氧化硅及二氧化锆的导热系数高，增强了包含填充件的固晶胶的导热性能，有利于提高应用该包含填充件的固晶胶的光电元件封装结构的散热性能。The solid crystal glue of the technical solution of the present invention contains at least one of boron nitride, titanium dioxide, silicon dioxide and zirconium dioxide, so that the solid crystal glue has a better refractive index, thereby effectively improving the application of the filler-containing filler. The light-emitting efficiency of the photovoltaic element package structure of the solid crystal glue. In addition, boron nitride, titanium dioxide, silicon dioxide and zirconium dioxide have high thermal conductivity, which enhances the thermal conductivity of the solid-state adhesive containing the filler, and is advantageous for improving the photovoltaic component packaging structure using the solid-state adhesive containing the filler. Thermal performance.
优选地，所述填充件的直径为20~1000nm，直径是指具有和相对应的填充件相同的体积的球的直径。填充件不必具有球形，形状可以为球形或非球形。所述填充件的导热系数为10~40 W/(m*K)，所述填充件的折射率为1.4~2.7，所述固晶胶的折射率为1.4~2.7。Preferably, the filler has a diameter of 20 to 1000 nm, and the diameter refers to a diameter of a ball having the same volume as the corresponding filler. The filler member does not have to have a spherical shape, and the shape may be spherical or non-spherical. The filling element has a thermal conductivity of 10~40 W/(m*K), the filler has a refractive index of 1.4 to 2.7, and the solid crystal glue has a refractive index of 1.4 to 2.7.
根据本发明实施例，填充件具有导热功能，而导热通过声子传递，填充件越小则填充件间的接口越多，使得声子传递受阻，不利于导热；当填充件过大，包含填充件的固晶胶厚度增加，使得包含填充件的固晶胶热阻增大，不利于导热。填充件的直径设置为20~1000nm，能够保证包含填充件的固晶胶具有高导热性能。填充件的导热系数高，有利于提高包含填充件的固晶胶的导热率，从而提高光电元件封装结构的散热性能。填充件的折射率为1.4~2.7，使得包含填充件的固晶胶折射率为1.4~2.7，提高应用该固晶胶的光电元件封装的出光效率。 According to an embodiment of the invention, the filling member has a heat conducting function, and the heat conduction is transmitted through the phonon. The smaller the filling member, the more interfaces between the filling members, so that the phonon transmission is blocked, which is disadvantageous for heat conduction; when the filling member is too large, the filling is included. The thickness of the solid crystal glue of the piece is increased, so that the thermal resistance of the solid crystal glue containing the filler is increased, which is disadvantageous for heat conduction. The diameter of the filler is set to 20~1000nm, which can ensure the high thermal conductivity of the solid crystal adhesive containing the filler. The high thermal conductivity of the filler member is beneficial to increase the thermal conductivity of the solid crystal adhesive containing the filler, thereby improving the heat dissipation performance of the photovoltaic component package structure. The refractive index of the filler is 1.4~2.7, so that the refractive index of the solid crystal adhesive containing the filler is 1.4~2.7, which improves the light extraction efficiency of the photovoltaic component package using the die bonding adhesive.
优选地，所述固晶胶的厚度为1~20μm，优选为3~8μm。Preferably, the solid crystal glue has a thickness of 1 to 20 μm, preferably 3 to 8 μm.
在本发明实施例中，热阻等于导热系数与厚度的乘积，固晶胶厚度越小，则固晶胶的导热性能越好；固晶胶的厚度过小则会影响固晶胶的机械强度。固晶胶的厚度设置为1~20μm时，优选为3~8μm，固晶胶具有可靠的机械强度同时可以保证固晶胶的高导热性能。In the embodiment of the present invention, the thermal resistance is equal to the product of the thermal conductivity and the thickness, and the smaller the thickness of the solid crystal glue, the better the thermal conductivity of the solid crystal glue; the thickness of the solid crystal glue is too small to affect the mechanical strength of the solid crystal glue. . When the thickness of the solid crystal glue is set to 1 to 20 μm, preferably 3 to 8 μm, the solid crystal glue has reliable mechanical strength and can ensure high thermal conductivity of the solid crystal glue.
本发明还提出一种光电元件封装结构100，其包括支架30、设置于所述支架30的反射涂层50、芯片70及封装胶90，所述光电元件封装结构100还包括所述的固晶胶10，所述固晶胶10部分覆盖于所述反射涂层50，所述芯片70部分容纳于所述固晶胶10，并部分显露出所述固晶胶10，所述封装胶90覆盖所述反射涂层50未被覆盖所述固晶胶10的区域，并包裹部分露出所述固晶胶10的芯片70。The present invention also provides a photovoltaic device package structure 100 including a support 30, a reflective coating 50 disposed on the support 30, a chip 70, and an encapsulant 90. The optoelectronic device package structure 100 further includes the die bond. The glue 10 is partially covered by the reflective coating 50, and the chip 70 is partially accommodated in the die bonding glue 10, and partially exposes the die bonding glue 10, and the sealing glue 90 covers The reflective coating 50 is not covered by the region of the die bond 10 and partially encloses the chip 70 of the die bond 10.
在本发明实施例中，所述芯片70部分容纳于所述固晶胶10，将芯片70牢固设置于固晶胶10内。由于芯片70衬底无反射镀膜，芯片70发出的光直接照射到反射涂层50，光线被反射涂层50反射，反射光会经由芯片70的衬底进入固晶胶10，再由固晶胶10进入封装胶90，根据菲涅尔定律，由于固晶胶10的具有适当的折射率，光的传播方向在芯片70的衬底和固晶胶10相接的界面及固晶胶10和封装胶90相接的界面未发生变化，从而提高了光电元件封装结构100的出光效率。此外，当固晶胶含有填充件,则其具有良好的导热性能，同时具有较佳的折射率，有效提高光电封装结构100的光散射特性，进一步增加出光效率。In the embodiment of the present invention, the chip 70 is partially accommodated in the die bonding glue 10, and the chip 70 is firmly disposed in the die bonding glue 10. Since the substrate of the chip 70 has no reflective coating, the light emitted by the chip 70 directly illuminates the reflective coating 50, and the light is reflected by the reflective coating 50. The reflected light enters the solid glue 10 through the substrate of the chip 70, and then the solid glue 10 enters the encapsulant 90. According to Fresnel's law, since the solid crystal adhesive 10 has an appropriate refractive index, the light propagation direction is at the interface between the substrate of the chip 70 and the bonding adhesive 10, and the bonding adhesive 10 and the package. The interface where the glue 90 is connected does not change, thereby improving the light extraction efficiency of the photovoltaic element package structure 100. In addition, when the solid crystal glue contains a filler, it has good thermal conductivity and has a better refractive index, which effectively improves the light scattering characteristics of the optoelectronic package structure 100 and further increases the light extraction efficiency.
优选地，所述芯片70包括衬底（未图示），所述固晶胶10的折射率相等于所述封装胶90的折射率，或所述固晶胶10的折射率等于所述衬底的折射率，或所述固晶胶10的折射率介于所述封装胶90的折射率与所述衬底的折射率之间。Preferably, the chip 70 includes a substrate (not shown), the refractive index of the bonding adhesive 10 is equal to the refractive index of the encapsulant 90, or the refractive index of the bonding adhesive 10 is equal to the lining The refractive index of the bottom, or the refractive index of the die bond 10, is between the refractive index of the encapsulant 90 and the refractive index of the substrate.
根据本发明实施例，芯片70衬底没有反射镀膜，所述反射涂层50可以替代反射镀膜的功能，芯片70发出的光直接射到支架30上的反射涂层50，向外反射，根据菲涅尔定律，固晶胶10的折射率要趋近芯片70或封装胶90的折射率，出光效率可以达到最大值。所述固晶胶10的折射率相等于所述封装胶90的折射率，或所述固晶胶10的折射率等于所述衬底的折射率，或所述固晶胶10的折射率介于所述封装胶90与所述衬底之间，避免光于光电元件封装结构100的传播方向发生改变，从而有效提高了光电元件封装结构100的出光效率。According to the embodiment of the present invention, the substrate of the chip 70 has no reflective coating, and the reflective coating 50 can replace the function of the reflective coating. The light emitted by the chip 70 directly hits the reflective coating 50 on the bracket 30 and is reflected outward. According to Neal's law, the refractive index of the solid crystal glue 10 should approach the refractive index of the chip 70 or the encapsulant 90, and the light extraction efficiency can reach a maximum value. The refractive index of the bonding adhesive 10 is equal to the refractive index of the encapsulant 90, or the refractive index of the bonding adhesive 10 is equal to the refractive index of the substrate, or the refractive index of the bonding adhesive 10 Between the encapsulant 90 and the substrate, the direction of propagation of the optoelectronic component package structure 100 is prevented from being changed, thereby effectively improving the light extraction efficiency of the optoelectronic component package structure 100.
本发明还提出一种光电元件封装结构200，其包括支架、芯片及封装胶，所述芯片涂覆有反射镀膜20，反射镀膜20可为金属反射层、布拉格衍射反射层、全方向反射层或金属-绝缘体混合反射层，所述光电元件封装结构还包括如权利要求1-5中任一项所述的固晶胶10，所述固晶胶10部分覆盖于所述支架，所述芯片部分容纳于所述固晶胶10，并部分显露出所述固晶胶10，所述反射镀膜20位于所述芯片底部，并容纳于所述固晶胶10，所述封装胶覆盖所述支架未被覆盖所述固晶胶10的区域，并包裹部分露出所述固晶胶10的芯片。The present invention also provides a photovoltaic device package structure 200 comprising a holder, a chip and an encapsulant, the chip being coated with a reflective coating 20, which may be a metal reflective layer, a Bragg diffraction reflective layer, an omnidirectional reflective layer or A metal-insulator hybrid reflective layer, the photovoltaic element package structure further comprising the die bonding glue 10 according to any one of claims 1 to 5, the die bonding glue 10 partially covering the holder, the chip portion The solid crystal glue 10 is partially exposed, and the solid crystal glue 10 is partially exposed. The reflective coating film 20 is located at the bottom of the chip and is accommodated in the die bonding glue 10, and the encapsulant covers the bracket. The region of the die bond 10 is covered, and a portion of the chip exposing the die bond 10 is wrapped.
在本发明实施例中，所述芯片部分容纳于所述固晶胶10，使得固晶胶10能够很好地固定芯片。所述芯片涂覆有反射镀膜20，芯片发出的光向下照射到反射镀膜20时，光被反射镀膜20反射，向上传播，从而提高了光电元件封装结构200的出光效率。In the embodiment of the present invention, the chip portion is accommodated in the die bonding glue 10, so that the die bonding glue 10 can fix the chip well. The chip is coated with a reflective coating film 20, and when the light emitted from the chip is irradiated downward to the reflective coating film 20, the light is reflected by the reflective coating film 20 and propagates upward, thereby improving the light extraction efficiency of the photovoltaic element package structure 200.
优选地，所述固晶胶10的折射率等于所述封装胶（未图示）的折射率。Preferably, the refractive index of the die bond 10 is equal to the refractive index of the encapsulant (not shown).
在本发明实施例中，所述芯片衬底有反射镀膜20, 则光直接反射至芯片内，此时经过固晶胶10和封装胶界面，根据菲涅尔定律，固晶胶10折射率趋近封装胶的折射率，光电元件封装结构200的出光效率可达最大。In the embodiment of the present invention, the chip substrate has a reflective coating film 20, The light is directly reflected into the chip. At this time, through the interface of the solid glue 10 and the encapsulant, according to Fresnel's law, the refractive index of the solid glue 10 approaches the refractive index of the encapsulant, and the light-emitting efficiency of the optoelectronic component package structure 200 can reach maximum.
本发明还提出一种光电元件封装结构（未图示），其包括所述的固晶胶10。该光电元件封装结构可为贴片封装、灯丝封装、集成封装或插件封装等。由于本光电元件封装结构采用了上述所有实施例的全部技术方案，因此至少具有上述实施例的技术方案所带来的所有有益效果，在此不再一一赘述。The present invention also provides a photovoltaic element package structure (not shown) including the die bond adhesive 10. The optoelectronic component package structure can be a chip package, a filament package, an integrated package or a package package. Since all the technical solutions of all the above embodiments are adopted in the present invention, at least all the beneficial effects brought about by the technical solutions of the foregoing embodiments are not described herein.
以上仅为本发明的优选实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。The above are only the preferred embodiments of the present invention, and are not intended to limit the scope of the invention, and the equivalent structure or equivalent process transformations made by the description of the present invention and the drawings are directly or indirectly applied to other related technical fields. The same is included in the scope of patent protection of the present invention.

Claims (10)

  1. 一种固晶胶，包含基体，其特征在于，所述固晶胶的折射率为1.4~2.7。  A die bonding adhesive comprising a substrate, wherein the solid crystal glue has a refractive index of 1.4 to 2.7.
  2. 如权利要求1所述的固晶胶，其特征在于，所述基体为含苯基的硅树脂、含苯基的丙烯酸树脂及含苯基的环氧树脂中的至少一种。The die bonding adhesive according to claim 1, wherein the substrate is at least one of a phenyl group-containing silicone resin, a phenyl group-containing acrylic resin, and a phenyl group-containing epoxy resin.
  3. 如权利要求1所述的固晶胶，其特征在于，所述固晶胶还包含若干填充件，所述填充件容纳于所述基体，所述填充件含有氮化硼、二氧化钛、二氧化硅及二氧化锆中的至少一种。The die bonding adhesive according to claim 1, wherein the die bonding adhesive further comprises a plurality of filler members, the filler member being housed in the substrate, the filler member comprising boron nitride, titanium dioxide, silicon dioxide And at least one of zirconium dioxide.
  4. 如权利要求3所述的固晶胶，其特征在于，所述填充件的直径为20~1000nm，所述填充件的导热系数为10~40 W/(m*K)，所述填充件的折射率为1.4~2.7，所述固晶胶的折射率为1.4~2.7。The die bonding adhesive according to claim 3, wherein the filler has a diameter of 20 to 1000 nm, and the filler has a thermal conductivity of 10 to 40. W/(m*K), the filler has a refractive index of 1.4 to 2.7, and the solid crystal glue has a refractive index of 1.4 to 2.7.
  5. 如权利要求1所述的固晶胶，其特征在于，所述固晶胶的厚度为1~20μm。The die bonding adhesive according to claim 1, wherein the thickness of the die bonding adhesive is 1 to 20 μm.
  6. 一种光电元件封装结构，其包括支架、设置于所述支架的反射涂层、芯片及封装胶，其特征在于，所述光电元件封装结构还包括如权利要求1-5中任一项所述的固晶胶，所述固晶胶部分覆盖于所述反射涂层，所述芯片部分容纳于所述固晶胶，并部分显露出所述固晶胶，所述封装胶覆盖所述反射涂层未被覆盖所述固晶胶的区域，并包裹部分露出所述固晶胶的芯片。A photovoltaic element package structure comprising a support, a reflective coating disposed on the support, a chip, and an encapsulant, wherein the optoelectronic component package structure further comprises any one of claims 1-5 The solid crystal glue partially covers the reflective coating layer, the chip portion is partially accommodated in the die bonding glue, and partially exposes the die bonding glue, and the encapsulant covers the reflective coating layer The layer is not covered by the region of the die bond and encapsulates a portion of the chip that exposes the die bond.
  7. 如权利要求6所述的光电元件封装结构，其特征在于，所述芯片包括衬底，所述固晶胶的折射率相等于所述封装胶的折射率，或所述固晶胶的折射率等于所述衬底的折射率，或所述固晶胶的折射率介于所述封装胶的折射率与所述衬底的折射率之间。The photovoltaic device package structure according to claim 6, wherein the chip comprises a substrate, and the refractive index of the die bond is equal to a refractive index of the encapsulant or a refractive index of the die bond Or equal to the refractive index of the substrate, or the refractive index of the die bond is between the refractive index of the encapsulant and the refractive index of the substrate.
  8. 一种光电元件封装结构，其包括支架、芯片及封装胶，所述芯片涂覆有反射镀膜，其特征在于，所述光电元件封装结构还包括如权利要求1-5中任一项所述的固晶胶，所述固晶胶部分覆盖于所述支架，所述芯片部分容纳于所述固晶胶，并部分显露出所述固晶胶，所述反射镀膜位于所述芯片底部，并容纳于所述固晶胶，所述封装胶覆盖所述支架未被覆盖所述固晶胶的区域，并包裹部分露出所述固晶胶的芯片。A photovoltaic element package structure comprising a holder, a chip and an encapsulant, the chip being coated with a reflective coating, wherein the optoelectronic component encapsulation structure further comprises the invention according to any one of claims 1 to 5 a solid crystal glue partially covering the bracket, the chip portion being received in the die bonding glue and partially exposing the die bonding glue, the reflective coating film being located at the bottom of the chip and accommodating In the solid glue, the encapsulant covers a region where the stent is not covered with the die bonding glue, and partially encapsulates the chip of the die bonding glue.
  9. 如权利要求8所述的光电元件封装结构，其特征在于，所述固晶胶的折射率等于所述封装胶的折射率。The photovoltaic device package structure according to claim 8, wherein the refractive index of the die bonding adhesive is equal to the refractive index of the encapsulant.
  10. 一种光电元件封装结构，其特征在于，其包括如权利要求1-5中任一项所述的固晶胶。A photovoltaic element package structure comprising the die bonding glue of any one of claims 1-5.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114279349A (en) * 2021-12-31 2022-04-05 深圳电通纬创微电子股份有限公司 Method for measuring thickness of integrated circuit die bonding glue

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113299636A (en) * 2021-05-25 2021-08-24 吉安市木林森显示器件有限公司 Solid crystal glue applied to anti-electromigration lamp bead and anti-electromigration lamp bead

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102482553A (en) * 2009-09-14 2012-05-30 索尼化学&信息部件株式会社 Light-reflective anisotropic electroconductive adhesive agent and light-emitting device
CN202839744U (en) * 2012-08-13 2013-03-27 蚌埠德豪光电科技有限公司 LED packaging structure
CN103606616A (en) * 2013-10-24 2014-02-26 叶逸仁 LED packaging process

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007277467A (en) * 2006-04-10 2007-10-25 Sony Chemical & Information Device Corp Curable resin composition
CN102127384B (en) * 2010-12-27 2014-01-01 广东风华高新科技股份有限公司 Impact and light decay-resistant die attach insulation paste and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102482553A (en) * 2009-09-14 2012-05-30 索尼化学&信息部件株式会社 Light-reflective anisotropic electroconductive adhesive agent and light-emitting device
CN202839744U (en) * 2012-08-13 2013-03-27 蚌埠德豪光电科技有限公司 LED packaging structure
CN103606616A (en) * 2013-10-24 2014-02-26 叶逸仁 LED packaging process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114279349A (en) * 2021-12-31 2022-04-05 深圳电通纬创微电子股份有限公司 Method for measuring thickness of integrated circuit die bonding glue

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