TWM374651U - Multi-chips LED packaging structure - Google Patents

Abstract

A multi-chips LED packaging structure is disclosed, which includes a substrate, a reflecting layer formed on the substrate, several pads formed in the pad openings of the reflecting layer, several LED chips disposed on the pads, a first frame disposed on the reflecting layer, and a complex optical film component disposed on the first frame.

Description

M374651 V. New Description: [New Technology Field] The present invention relates to a light-emitting diode package structure, and in particular to a multi-layer wafer light-emitting diode package structure. [Prior Art]

Light Emitting Diode (LED) is a tiny solid-state light source with the advantages of small size, good shock resistance, power saving, long life and variety of colors, and can meet the needs of various emerging applications. It has become a light source that can be seen everywhere in everyday life. Compared with traditional incandescent bulbs and fluorescent lamps, the light-emitting diodes can have multiple, multiple combinations, and the single light-emitting diode has a low heat generation, thereby reducing the occurrence of thinness, and the light-emitting diode can be flat. The package can be developed into a light second product. Based on the above advantages, the light-emitting diode is regarded as a potential commodity to replace the traditional lighting device by the industry. [New content] The purpose of this new type of diode is to provide a multi-layer wafer illumination and package structure to enhance the brightness of the sound and light. In the present invention, a multi-layer wafer light-emitting structure is proposed, which comprises a substrate, a reflective layer formed on the substrate, a solder pad of the reflective layer (4) 4, and a plurality of pads disposed on the reflective surface. Light-emitting diode chips 'connected to a light-emitting diode wafer and soldered, ', disposed on a reflective layer, <-outer frame, and disposed on the 3rd M374651

- Composite optical film elements on the outer frame. The first outer frame has an opening, and the light emitting diode chip is disposed in the first open towel=slice light emitting diode (4) structure and further comprises a transparent knee, and the transparent job is placed in the opening: A diode wafer in which the transparency: the height is south or equal to the height of the line. The composite optical film element includes a second outer frame ' having a second opening and a second plurality of optical layers formed. The size of the second opening π is greater than or equal to the size of the first opening. The optical layer includes at least a light-converting layer. The second outer frame can be a tape, and the thick tape contains an adhesive surface to be adhered to the first outer frame. The material of the second outer frame may be polyethylene terephthalate (PET) or resin. The second outer frame includes an inner side facing the second opening, and the inner side is a reflecting surface. The optical layer may be selected from the group consisting of a diffusion layer, a transparent layer, a light-converting layer, a concentrating layer, and combinations thereof. The material of the first frame may be metal, plastic, or fiberglass. The multi-layer wafer light-emitting diode package further includes a reflective film formed on the surface of the first outer frame. The substrate may be an aluminum substrate, a ceramic substrate, or a glass substrate (ITO). The mother-on-weld of the compound wafer light-emitting diode package can be respectively connected to adjacent ones of the light-emitting diode chips. The light emitting diode chips can be arranged in a double row. The opening angle of the first opening may be between 90 degrees and 135 degrees. Another aspect of the present invention is a multi-layer wafer light-emitting diode package structure comprising a substrate, a reflective layer formed on the substrate, a plurality of pads disposed in the pad opening of the reflective layer, and a plurality of pads disposed on the pad a light emitting diode chip, a first outer frame disposed on the reflective layer, and a composite optical film element disposed on the second outer frame. The first outer frame includes a first opening, and the light emitting diode chip is disposed in the first opening. Compound crystal 4 M374651 ^ Light-emitting diode package structure also contains transparent plastic, transparent adhesive is set in the middle, and coated with light, wafer. The composite optical film element has a second outer frame of the first opening, and a plurality of optical layers formed in the second opening. The size of the second opening σ is greater than or equal to the size of the first opening. The optical layer includes at least a light-converting layer. The second outer frame may be a thick tape, and the thick tape may have an adhesive surface to be adhered to the first outer frame. The material of the second outer frame may be polyethylene terephthalate (PET) or resin. The second outer frame includes an inner side facing the second opening, and the inner side is a reflecting surface. The optical layer can be selected from the group consisting of a diffusion layer, a transparent layer, a light-converting layer, a concentrating layer, and combinations thereof. The first eve of the busy material can be metal, plastic, or fiberglass. The composite wafer light emitting diode package further includes a reflective film formed on the surface of the first outer frame. The substrate may be an aluminum substrate, a ceramic substrate, or a glass substrate στο). The light emitting diode chips can be arranged in a double row. The light-emitting diode wafer is a surface mount device (smd), a light-emitting diode lamp (iamp), a wire-bracket type light-emitting diode, and the like. The novel dual-chip light-emitting diode package structure can improve the overall brightness and uniformity of the whole through the transparent glue in the first opening and the composite optical film element. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The spirit of the present invention will be clearly described in the following drawings and detailed description. 'A skilled person in the art can understand the preferred embodiment of the new 5 M374651 type, and the technology that can be taught by the present invention. It is intended to be modified and modified without departing from the spirit and scope of the invention.

Referring to Fig. 1, there is shown a cross-sectional view showing a first embodiment of the novel multi-layer wafer light emitting diode package structure. The multi-layered light-emitting diode package structure 100 includes a substrate 110, a reflective layer 120 formed on the substrate 110, a plurality of light-emitting diode chips 130 disposed on the reflective layer 120, and a first surface disposed on the reflective layer 120. The outer frame 140, and the composite optical film element 150 disposed on the first outer frame 140, wherein the reflective layer 120 includes a plurality of pad openings 122, and the multi-die light emitting diode package structure 100 includes a plurality of pads disposed on the pads The pad 160 and the plurality of bonding wires 170 in the opening 122 connect the LED chip 130 and the pad 160 through the bonding wire 170.

The substrate 110 may be an aluminum substrate, a ceramic substrate, a glass substrate, or the like, and the substrate 110 includes a printed circuit layer. The reflective layer 120 is formed on the substrate 110, and the material of the reflective layer 120 may be an enaad paint. The first outer frame 140 is disposed on the reflective layer 120. The first outer frame 140 has a first opening 142, and the light emitting diode chip 130 is disposed in the first opening 142. The material of the first outer frame 14〇 may be metal, plastic, or glass fiber (FR4). The multi-layer wafer light-emitting diode package structure 1 further includes a reflective film 144. The reflective film 144 is formed on the outer surface of the first outer frame 14A, so that the first outer frame 140 has a function of reflecting light. The reflective film 144 may be electroplated silver plated on the first outer frame 140, or, in other embodiments, the reflective film 144 may be a white paint having a reflective function, and the first outer frame 140 may be painted white. In a manner, the first outer frame 14 has a reflective function. The first opening 142 of the first outer frame 140 has an angle, and the angle 0 is defined as the missing angle between the inner surface of the first opening 142 and the substrate "π〇, and the angle 0 of the first opening 142 is between 9 to 135 degrees to enhance the concentrating effect. The composite wafer light emitting diode package structure 10 further includes a transparent adhesive 180, and the transparent adhesive 18 is disposed in the first opening ι42 and covers the light emitting diode chip 130, wherein the height of the transparent adhesive 18〇 is greater than or It is equal to the height of the bonding wire 170 to increase the brightness of the LED chip 130 through the transparent adhesive 18 . In this embodiment, the height of the transparent adhesive 18 is the same as the height of the first outer frame 140, that is, the transparent adhesive 18 is filled with the g first openings 142. However, in other embodiments, the transparent adhesive 180 may not fill the entire first opening 142 as long as the coated LED chip 130 is coated. The material of the transparent adhesive 180 can be made of a resin such as epoxy, Shi Xi Yao, UV glue or the like. The composite optical film element 150 is disposed on the first outer frame 14A, and the composite optical film element 150 includes a second outer frame 152 and a plurality of optical layers 154. The second outer frame 152 includes a second opening 156, wherein the second opening 156 has a size greater than or equal to the size of the first opening 142, and the optical layer 154 is formed in the second opening of the second outer frame 152. The composite optical film element 150 can be produced by coating, printing, glue molding, injection molding, or the like. σ The composite optical thin-twist element 150 is preferably separately fabricated M374651, and then combined with the first outer frame 140 filled with the transparent adhesive 180, after the composite optical film element 150 is combined with the first outer frame 140, An outer frame 140 is then bonded or pressed to the substrate 11A. Alternatively, the first outer frame 14 填 filled with the transparent adhesive 180 may be bonded or pressed to the substrate 11 , before being combined with the previously prepared composite optical film element 15 0 0

The material of the second outer frame 152 of the composite optical film element 150 may be a resin or a heat-resistant plastic such as polyethylene terephthalate (PET). The second outer frame 152 may also be a tape having a thickness, wherein the tape has an adhesive surface to adhere the second outer frame 152 to the first outer frame 14''. The inner side surface 155 of the second outer frame 152 facing the second opening 156 is a reflecting surface, and the color of the inner side surface 155 having the reflecting function may be white. The optical layer 154 in the composite optical film element 150 of this embodiment may be a multilayer optical film. For example, the optical layer 154 may include a transparent layer 154a, a light-converting layer 154b, a light-concentrating layer 154c, and a diffusion layer I54d. The material of the transparent layer 154a may be a transparent resin such as epoxy, silicone, UV glue or the like. The transparent layer 154a can provide I-light and increase the degree of cost. The light-converting layer 154b converts the wavelength emitted by the LED chip 130 to a desired wavelength. The light-converting layer 154b may contain phosphor powder or other wavelength converting material. If the phosphor powder is used as the wavelength converting material, the light-transmitting layer l54b may also be referred to as a phosphor layer. The diffusion layer 154d allows the emitted light to be more uniform. In other embodiments the optical layer 154 can be another M374651 combination or a single layer optical film. The optical layer 154 may be further provided with other optical elements such as an optical lens structure, a diffusion plate, and a polarizer. Referring to Figures 2A and 2B, respectively, a partial top view and a cross-sectional view of a second embodiment of the novel dual-chip light-emitting diode package structure are shown. The multi-layered light-emitting diode package structure 200 includes a substrate 210 and a reflective layer 220 formed on the substrate 210. The plurality of light-emitting diode chips 230 disposed on the reflective layer 220 are disposed on the reflective layer 220. The first outer frame 240 and the composite optical film element 25A disposed on the first outer frame 240. The reflective layer 220 includes a plurality of pad openings 222. The multi-layer wafer LED package structure 200 includes a plurality of soldering lines 26 〇 and a plurality of bonding wires 270 ′ disposed in the soldering openings 222 for transmitting the bonding wires 27 . The light emitting diode chip 230 and the bonding pad 260 are connected. The angle 0 between the first outer frame 240 and the substrate 210 may be between 90 degrees and 135 degrees. The difference between this embodiment and the first embodiment is that in the present embodiment, the (four) photodiode wafer 23G is arranged in a double row, and the LED array 230 can use a common pad 26 during the packaging process. To make space allocation more efficient. The pair of LED chips 230a, 230b can share a pair of pads 26〇a, 26〇b, and the pads 26 and pads 260b can be positive pads and negative pads, respectively. The pins of the positive and negative electrodes of the polar body chip 230a can be respectively connected to the pads of the positive and negative electrodes through the bonding wires 27, and the pins of the positive and negative electrodes of the other LED chip 230b are also transmitted through the bonding wires 27〇. Connect to the positive and negative negative pads 2, 2_. In the present embodiment, the pads 26 are disposed between the two rows of LEDs 230 to facilitate the connection of the pair of LEDs 230 to the pair of pads 260.

Referring to Fig. 3, there is shown a cross-sectional view showing a third embodiment of the novel multi-layer wafer light emitting diode package structure. The multi-layered light-emitting diode package structure 300 includes a substrate 31 , a plurality of light-emitting diode chips 330 disposed on the reflective layer 320 , and a first surface disposed on the reflective layer 320 . The outer frame 340 and the composite optical film element 35〇 disposed on the first outer frame 340. The light-emitting diode wafer 330 in this embodiment is a surface mounting device (SMD). The reflective layer 320 includes a plurality of pad openings 322 ′. The multi-layer wafer LED package structure 300 includes a plurality of solder pads 360 disposed in the pad openings 322 , and the surface-adhesive element type LEDs 330 are disposed. On the pad 360. In other embodiments, the light-emitting diode chip 330 may be a light-emitting diode lamp tube, a wire holder type light-emitting diode, or the like.

The substrate 310 may be a substrate, a ceramic substrate, a glass substrate, or the like, and the substrate 310 includes a printed circuit layer. The reflective layer 32 is formed on the substrate 310. The material of the reflective layer 320 may be a lead paint. The first outer frame 340 is disposed on the reflective layer 320, and the first outer frame 340 has a first opening 342'. The light emitting diode chip 330 is disposed in the first opening 342. The material of the first outer frame 340 may be metal, plastic or fiberglass (FR4). The multi-layer wafer light-emitting diode package structure 300 further includes a reflective film 344' formed on the outer surface of the first outer frame 340 to make the first outer frame 340 have a reflective function. The M374651 reflective film 344 can be an electric ore in the first outer frame 340. Alternatively, in other embodiments, the reflective film 344 can be a white paint having a reflective function, by coating the first outer frame 34. The white way 'make the first outer frame 340 have a reflective function. The first opening 342 of the first outer frame 340 has an angle, and the angle 0 is defined as a clip between the inner surface of the first opening 342 and the substrate 310.

The angle 'the first opening 342' has an angle 0 between 90 degrees and 135 degrees to enhance the concentrating effect. The composite wafer LED package structure 300 further includes a transparent adhesive 380 disposed in the first opening 342. The transparent adhesive 38 is filled in the first opening 342 and covers the LED array 330 to pass through the transparent adhesive. 380 increases the brightness of the light-emitting diode chip 33 turns. The south of the transparent adhesive 38〇 must be greater than or equal to the height of the light-emitting diode wafer 33〇. In this embodiment, the height of the transparent adhesive 380 is higher than that of the first outer frame 340.

The degree is the same, that is, the transparent adhesive 380 fills the entire first opening 342. However, in other embodiments, the transparent adhesive 380 may not fill the entire first opening 342 as long as the coated LED chip 33 is covered. The material of the transparent adhesive 38〇 may be a transparent resin such as epoxy, silicone, UV glue or the like. The composite optical film element 350 is disposed on the first outer frame 340, and the composite optical film element 350 includes a second outer frame 352 and a plurality of optical layers 354. The second outer frame 352 includes a second opening 356, wherein the second opening 356 has a size greater than or equal to the size of the first opening 342. The optical layer 354 is formed in the second opening 356 11 of the second outer frame 356. /4651. The composite optical film element 350 can be produced by coating, printing, gluing, injection molding, or the like. The composite optical film element 350 is preferably combined with the first outer frame 34 填 filled with the transparent adhesive 380 after the independent fabrication is completed. After the composite optical film element 350 and the first outer frame 34 are combined, the first The outer frame 340 is then bonded or pressed to the substrate 310. Alternatively, the first outer frame 140 filled with the transparent adhesive 380 may be bonded or pressed to the substrate 31, and then combined with the composite optical film element 35A prepared in advance.

The material of the second outer frame 352 of the composite optical film element 350 may be a resin or a hot plastic such as polyethylene terephthalate (PET). The second outer frame 352 can also be a tape having a thickness, wherein the tape has an adhesive surface, and the second outer frame 352 is adhered to the first outer frame 340. The inner side surface 355 of the second outer frame 352 facing the second opening 356 is a reflecting surface, and the color of the inner side surface 355 having the reflective function may be white. The optical layer 354 in the composite optical film element 350 in the present embodiment may be a plurality of layers. Optical film. For example, the optical layer 354 may include a transparent layer 354a, a light-converting layer 354b, a light-concentrating layer 354c, and a diffusion layer 354d. The material of the transparent layer 354a may be a transparent resin such as epoxy, silicone, UV glue or the like. The transparent layer 354a provides a function of collecting light and increasing brightness. The light-converting layer 354b converts the wavelength emitted by the LED chip 330 to a desired wavelength. The light-converting layer 354b may contain phosphor powder or other wavelength converting material M374651. The diffusion layer 354d allows the emitted light to be more uniform. In other embodiments, optical layer 354 can be other combinations or a single layer of optical film. The optical layer 354 may be further provided with other optical elements such as an optical lens structure, a diffusion plate, and a polarizer.

The light-emitting diode chip of the present invention can be connected to the substrate through a wire holder in addition to the wire bonding technology and the surface bonding technology. The optical layer of the composite optical film element may be selected from the group consisting of a transparent layer, a light-converting layer, a light-concentrating layer, a diffusion layer and a combination thereof, and may further comprise other possible films, or the composite optical film element may further comprise a lens. For an optical component, the lens can be placed on the optical layer. The composite optical film element is preferably prepared in advance, and then the composite optical film element can be combined with the first outer frame and then combined with the substrate, or the first outer frame can be combined with the substrate first, the composite optical film element Combined with the first outer frame.

Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the present invention, and it is to be understood that those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. The scope of the new protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS In order to make the above and other objects, features, advantages and embodiments of the present invention more obvious, the detailed description of the drawings is as follows: FIG. 1 is a schematic diagram of the present invention. Polar Body Package 13 A cross-sectional view of a first embodiment of the M374651 structure. 2A and 2B are respectively a partial top view and a cross-sectional view showing a second embodiment of the multi-layer wafer light-emitting diode package structure of the present invention. Figure 3 is a cross-sectional view showing a third embodiment of the novel multi-layer wafer light-emitting diode package structure.

[Main component symbol description] 100: Multi-layer wafer light-emitting diode 110: Substrate package structure 120: Reflective layer 122: Pad opening 130: Light-emitting diode wafer 140: First outer frame 142: First opening 144: Reflective film 150: composite optical film element 152: second outer frame 154, 154a, 154b, 154c, 155: inner side surface 154d: optical layer 156: second opening 160: pad 170: bonding wire 180: transparent adhesive 200: duplex wafer illumination Diode 210: substrate package structure 220: reflective layer 222: pad opening 230, 230a, 230b: light emitting diode 240: first outer frame body wafer 250: composite optical film element 260, 260a, 260b: pad 270 : bonding wire 300 : multiple wafer light emitting diode M374651 310 : substrate 320 : reflective layer 330 : light emitting diode wafer 342 : first opening 350 : composite optical film element 354 , 354a , 354b , 354c , 355 : inner side 354d : Optical layer 356: second opening

Package Structure 322: Pad Opening 340: First Frame 344: Reflective Film 352: Second Frame 360: Pad 380: Clear Glue 0: Angle 15

Claims (1)

6. Patent application scope 1. A multi-layer wafer light-emitting diode package structure comprising: a substrate; a reflective layer formed on the substrate, the reflective layer comprising a plurality of pad openings; a plurality of pads disposed on a plurality of light emitting diode chips disposed on the reflective layer; a plurality of bonding wires connecting the light emitting diode chips and the pads; a first outer frame disposed on the On the reflective layer, the first outer frame includes a first opening, and the light emitting diode chips are disposed in the first opening; a transparent adhesive is disposed in the first opening and covers the plurality of light emitting And a composite optical film component is disposed on the first outer frame, the composite optical film component comprises: a second outer frame, comprising a second opening, the second opening having a size greater than or equal to the The size of the first opening and a plurality of optical layers are formed in the second opening, and the optical layers comprise at least one light-converting layer. 2. The multi-layer wafer light-emitting diode package structure of claim 1, wherein the second outer frame is a thick tape, and the thick tape comprises an adhesive surface for adhering to the first outer frame. 3. The dual wafer light emitting diode sealing structure according to the invention of claim 1, wherein the first opening has an angle of 90 degrees to 135 degrees. 4. The multi-layer wafer light-emitting diode package structure of claim 1, wherein the second outer frame comprises an inner side surface facing the second opening, wherein the inner side surface is a reflective surface. The multi-layer wafer light-emitting diode package structure according to the first aspect of the patent scope of the third aspect of the invention, wherein the optical layers are selected from the light-transmitting layer, the transparent layer, a diffusion layer, and a light-concentrating layer. The composite wafer illuminating two-core sealing structure according to claim 1, wherein the material of the first outer frame is metal, plastic, or glass fiber. The multi-wafer light-emitting two-architecture package structure of claim 6, further comprising a reflective film formed on the surface of the first outer surface. The multi-layer wafer light-emitting diode package structure of claim 1, wherein the substrate is an aluminum substrate, a ceramic substrate, or a glass substrate (ITO). 9. The multi-layer wafer light-emitting diode package structure of claim 1, wherein each of the materials is respectively connected to adjacent ones of the light-emitting diode chips. The multi-layer wafer light emitting diode package structure of claim 1, wherein the light emitting diode chips are arranged in a double row. A multi-layer wafer light-emitting diode package structure comprising: a substrate; a reflective layer formed on the substrate, the reflective layer comprising a plurality of pad openings; and a plurality of pads disposed in the pad openings a plurality of light emitting diode chips disposed on the pads; a first outer frame disposed on the reflective layer, the first outer frame including a first opening, the light emitting diode chips being disposed a transparent adhesive disposed in the first opening and covering the light emitting diode wafers; and a composite optical film component disposed on the first outer frame, the composite optical film component The second outer frame includes a second opening, the second opening has a size greater than or equal to the size of the first opening, and a plurality of optical layers are formed in the second opening, the optical layers At least one light-converting layer is included. The method of claim 11, wherein the second outer frame is a thick tape, and the thick tape comprises an adhesive surface to be adhered to the first outer frame. on. 13. The dual wafer light emitting diode package structure of claim 11, wherein the first opening has an angle of from 90 degrees to 135 degrees. 14. The multi-layer wafer light emitting diode package structure of claim 11, wherein the second outer frame comprises an inner side facing the second opening, the inner side being a reflecting surface. The multi-layer wafer light-emitting diode package structure of claim 11, wherein the optical layer is selected from the light-transmitting layer, a transparent layer, a diffusion layer, a light-concentrating layer, and Group of combinations 16. The multi-layer wafer light emitting diode package structure of claim 11, wherein the material of the first outer frame is metal, plastic, or glass fiber. The multi-layer wafer light-emitting diode package structure of claim 16, further comprising a reflective film formed on a surface of the first outer frame. 18. The multi-layer wafer light-emitting device according to claim 11, wherein the substrate is an aluminum substrate, a plate, or a glass substrate. 19. The multi-layer wafer light emitting diode package structure of claim 11, wherein the light emitting diode chips are arranged in a double row. 20. The multi-layer wafer light emitting diode package structure according to claim 11, wherein the light emitting diode chips are surface mounting devices (SMD), light emitting diode lamps, or Wire-bracket type light-emitting diode. 20