WO2018040311A1 - 一种改善套切面板光配向性的装置 - Google Patents

一种改善套切面板光配向性的装置 Download PDF

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Publication number
WO2018040311A1
WO2018040311A1 PCT/CN2016/107092 CN2016107092W WO2018040311A1 WO 2018040311 A1 WO2018040311 A1 WO 2018040311A1 CN 2016107092 W CN2016107092 W CN 2016107092W WO 2018040311 A1 WO2018040311 A1 WO 2018040311A1
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area
chip
alignment
region
liquid crystal
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Ceased
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English (en)
French (fr)
Inventor
赵丽
彭邦银
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/324,975 priority Critical patent/US10718978B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
    • G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133351—Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1334—Constructional arrangements; Manufacturing methods based on polymer dispersed liquid crystals, e.g. microencapsulated liquid crystals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1334—Constructional arrangements; Manufacturing methods based on polymer dispersed liquid crystals, e.g. microencapsulated liquid crystals
    • G02F1/13345—Network or three-dimensional gels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133753—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers with different alignment orientations or pretilt angles on a same surface, e.g. for grey scale or improved viewing angle
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133753—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers with different alignment orientations or pretilt angles on a same surface, e.g. for grey scale or improved viewing angle
    • G02F1/133757—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers with different alignment orientations or pretilt angles on a same surface, e.g. for grey scale or improved viewing angle with different alignment orientations

Definitions

  • the present invention relates to the field of display technology, and more particularly to an apparatus for improving the optical alignment of a sleeved panel.
  • the liquid crystal display module includes: a liquid crystal display panel that displays an image on the liquid crystal display panel by changing an arrangement of liquid crystal molecules in the liquid crystal layer according to an electric field generated in the liquid crystal layer; a backlight assembly for providing light to the liquid crystal display panel; and a shell, The liquid crystal display panel and the backlight assembly are fixed in the case.
  • the liquid crystal display panel includes a liquid crystal layer, a pair of substrates in which the liquid crystal layer is interposed, and a pair of polarizers attached to the outside of the substrate.
  • the image displayed on the liquid crystal display panel is expected to have the same display quality regardless of which direction is viewed.
  • many attempts have been made.
  • a vertical alignment (VA) mode liquid crystal display and a PlanetoLine Switching (PLS) mode liquid crystal display have been developed, and a vertical alignment mode liquid crystal display utilizes liquid crystal molecules perpendicular to a substrate, and an upper line conversion mode liquid crystal
  • the display utilizes the horizontality of the liquid crystal molecules relative to the substrate. Since the liquid crystal molecules of these displays have similar refractive index anisotropy characteristics in different directions, the liquid crystal display of the vertical alignment (VA) mode and the liquid crystal display of the PlanetoLine Switching (PLS) mode have a wide viewing angle.
  • the metal line pattern, the slit or the protrusion made of the organic film is formed on the unit pixel so that the liquid crystal molecules can have similar slopes in different directions.
  • the pattern, the slit or the protrusion lowers the aperture ratio, which is a ratio of the area of the light supplied from the backlight assembly through the unit pixel to the total area of the unit pixel.
  • the term "unit pixel" as used herein may refer to a pixel of a liquid crystal display panel that exhibits a basic color.
  • pretilt is formed in the alignment film on the substrate to fix the direction and slope of the liquid crystal molecules located in the vicinity of the substrate.
  • Pretilt of the alignment film It is formed by physically rubbing rubbing cloth on an alignment material previously formed on a substrate.
  • the method of using the rubbing cloth may lower the yield of the liquid crystal display panel.
  • friction cloths are frequently replaced, resulting in an increase in process time and cost.
  • the photo-alignment process uses a non-contact method to form a pre-tilt of the alignment film without forming a pattern, slit or protrusion in the pixel region.
  • the photoalignment process includes applying a photoreactive material onto a substrate and obliquely illuminating ultraviolet (UV) light onto a surface on which the photoreactive material is applied.
  • UV ultraviolet
  • the pretilt of the alignment film is formed according to the direction of the irradiation.
  • the unit pixel has a pixel electrode formed on one substrate, a common electrode formed on another transparent substrate spaced apart from the substrate of the pixel electrode, and a liquid crystal layer interposed between the two substrates.
  • the pixel electrode is formed on each of a plurality of unit pixels arranged on one substrate while the common electrode is formed on the entire surface of the other substrate, resulting in a dispersion field being formed between the edge of the pixel electrode and the common electrode.
  • the liquid crystal molecules affected by the dispersion field are independently arranged without being affected by the pixel potential, and block the light supplied from the backlight assembly, forming a fringe field texture (FFT) in which normal luminance does not appear in the domain.
  • FFT fringe field texture
  • the direction of the pretilt of each domain is matched to the polarization axis of the polarizer attached to the substrate of the liquid crystal display panel. Since the pretilt of each domain is substantially perpendicular to at least one polarization axis, light passing through the domain boundary texture (DBT) or liquid crystal molecules near the edge of the pixel electrode is not perpendicular to the polarization axis of the polarizer. As a result, the brightness is locally reduced in the domain boundary texture (DBT) or near the edge of the domain.
  • DBT domain boundary texture
  • the aperture ratio of the unit pixel is calculated by dividing the area of the unit pixel having normal luminance by the total area of the unit pixel.
  • the light transmittance of a unit pixel is calculated by dividing the luminance of light passing through the unit pixel by the luminance of the backlight assembly before the light passes through the unit pixel.
  • DBT domain boundary texture
  • FFT fringe field texture
  • the pre-tilt angle or pre-tilt angle is determined according to the intensity of the illumination light and/or the illumination time. If the pretilt angle is too large, molecules farther away from the alignment film may be erroneously aligned without being consistent with the potential applied to the pixel electrode. As a result, the unit pixel will display a brightness higher or lower than the normal brightness, lowering the contrast of the liquid crystal display panel and causing a black afterimage phenomenon, in the black afterimage phenomenon, when the signal representing the black image is supplied to the pixel electrode in the unit pixel Gray appears in the middle.
  • the panel cutting technology is used to improve this defect, that is, the large-size panel and the small-sized panel are combined in one large-plate production, which greatly reduces the production cost of the large-size LCD TV, as shown in Fig. 1.
  • the number of pixels per inch is available in the panel operable area (AA, AA is Active Area) under the same visible area (VA curing, VA full view area).
  • the difference in the size of the (PPI) affects the difference in the pretilt angle of the liquid crystal, which affects the performance of the panel, as shown in Fig. 2 and Fig. 3.
  • a visible region (VA) liquid crystal is firstly incorporated into a certain proportion of high-purity reactive liquid crystal (phototaxis monomer), which has a liquid crystal core of ordinary liquid crystal molecules, and A reactive light energy base such as one or more acrylic groups at the end; then a voltage is applied between the upper and lower substrates to cause a liquid crystal molecule to produce a pretilt angle, corresponding to different domains of the pixel, and the liquid crystal molecules tend to be different, and then proceed After ultraviolet light (UV) in a specific wavelength range is irradiated from the thin film transistor (TFT) side, the reactive liquid crystal is polymerized into a polymer network to attract liquid crystal molecules of the surface layer to form a fixed pretilt angle.
  • UV ultraviolet light
  • TFT thin film transistor
  • the number of pixels per inch (PPI, PPI is pixels per inch) is different for the chip-operated area (Chip AA), and the light transmittance is also used in the VA curing process. There is a difference.
  • the smaller the number of pixels (PPI) possessed by inches the larger the open area of the thin film transistor (TFT) side, the greater the light transmittance, the larger the pretilt angle of the liquid crystal, and the risk of broken bright spots, as shown in Fig. 3.
  • the number of pixels per inch is the unit of image resolution, so the higher the number of pixels per inch (PPI), the higher the density of the display.
  • the present application proposes an apparatus for improving the optical alignment of a sleeved panel.
  • the utility model relates to a device for improving the optical alignment of a sleeve-cut panel, comprising a sleeve-cut substrate, an N-column chip 1 and an N-column chip 2, wherein the photomask is further included;
  • the N-column chip 1 and the N-column chip 2 are alternately arranged in an alternating arrangement to form an alternate arrangement structure, which is mounted on the sleeve-cut substrate;
  • the area of the chip 2 is larger than the area of the chip 1;
  • the reticle is configured to cover the N-column chip 1 and the N-column chip 2, so that the ultraviolet light passes through the reticle to illuminate the N-column chip 1 and the N-column chip 2;
  • the N is a positive integer.
  • the two rows of N-row chip operable regions have different numbers of pixels per inch inside the operable area.
  • the pixel includes: a first alignment film formed on the first substrate; and a second alignment film formed on the second substrate and facing the first alignment film;
  • each of the adjacent domains including a normal luminance region and a domain boundary region, each domain boundary region defining a partial region between adjacent domains.
  • the pretilt angle of the liquid crystal molecules in the normal luminance region and the pretilt angle of the liquid crystal molecules in the domain boundary region are the same.
  • the reticle is a halftone mask reticle.
  • the halftone mask reticle includes a pixel region and a peripheral trace region, and the pixel region includes a semi-transmissive region.
  • the light transmittance of the semi-transmissive region of the halftone mask is reduced from a direction away from the edge of the pixel region to the edge of the pixel region.
  • the semi-transmissive area of the halftone mask comprises:
  • the first half of the light transmission area is the first half of the light transmission area
  • the light transmittance of the second semi-transmissive region is smaller than the light transmittance of the first semi-transmissive region.
  • the number of pixels per inch in the inner area of the N-row chip operable area of the two N-row chips having different areas is corresponding to the first semi-transmissive area of the halftone mask mask;
  • the number of pixels per inch of the N-row chip operable area of the two N-column chips having different areas is different to the second semi-transmissive area of the halftone mask.
  • the ultraviolet light has a wavelength in the range of 190 nm to 400 nm.
  • the invention starts from adjusting the ultraviolet light irradiation intensity of different size chips on the sleeve cutting substrate, and adds a half-ton mask between the large plate and the light source, as shown in FIG. 4, in each inch.
  • the area of the chip with a larger number of pixels (PPI) corresponds to the area where the reticle transmittance is high, and the area of the chip (PPI) having a small number of pixels per inch corresponds to the reticle penetration.
  • the area with low rate is finally achieved by changing the light transmittance so that the liquid crystal pretilt angles of the two sizes are close to avoid causing liquid Problems such as poor crystal diffusion or broken bright spots, as shown in Figure 5.
  • the invention performs optical alignment of different intensities on different pixel regions of one pixel unit, so that the alignment of the entire pixel unit is the same, and the display quality of the gate unit pixel is improved.
  • the invention modifies the light transmittance of the visible area curing (VA curing), and the liquid crystal pretilt angles of the two size chips are similar, as shown in FIG. 6, to avoid problems such as poor diffusion of liquid crystals or broken bright spots.
  • a half-tone mask is added between the large board and the light source during the VA curing, and the chip number (PPI) having a larger number of pixels per inch (PPI) is used.
  • the area of the panel having a smaller number of pixels per inch (PPI) corresponds to the area where the transmittance of the reticle is low, and the relative transmittance is adjusted, as shown in FIG. 5.
  • the relative transmittance of the light distribution to the ultraviolet light can be adjusted, and the two kinds of chip (Chip) obtain the similar liquid crystal pretilt angle, as shown in FIG. The risk of poor diffusion or broken spots.
  • Figure 1 is a schematic view of a sleeve-cut substrate
  • FIG. 2 is a schematic diagram of a pre-dumping of a liquid crystal panel of a panel having a larger number of pixels (PPI);
  • FIG 3 is a schematic diagram of liquid crystal pre-dipping of a panel of a size panel having a small number of pixels (PPI);
  • Figure 4 is a view showing the light alignment device of the sleeve cutting panel of the present invention.
  • FIG. 5 is a schematic diagram of adding a photomask to a sleeve-cut substrate according to the present invention
  • Figure 6 is a schematic view showing the pre-tilt orientation of the panel liquid crystal of the present invention.
  • FIG. 7 is a schematic diagram of a liquid crystal pre-dipping direction of a panel having a larger pixel number (PPI) according to the present invention.
  • FIG. 8 is a schematic diagram of a pre-dumping of a liquid crystal panel of a panel having a small number of pixels (PPI) according to the present invention.
  • Figure 9 is a perspective view of a partial cross section of a liquid crystal display panel.
  • the N-column chip one (2) and the N-column chip two (3) are alternately arranged in an alternating arrangement to be mounted on the sleeve-cut substrate 1;
  • the area of the chip 2 is larger than the area of the chip 2;
  • the reticle 4 is used to cover the N-column chip (2) and the N-column chip 2, so that the ultraviolet light is transmitted through the reticle to illuminate the N-column chip 2 and the N-column chip 2;
  • the N is a positive integer.
  • the difference in the number of pixels per inch (PPI) affects the size of the liquid crystal pretilt angle.
  • Embodiment 3 This embodiment differs from the specific embodiment by one or two:
  • the pixels include:
  • first alignment film formed on the first substrate and a second alignment film formed on the second substrate and facing the first alignment film
  • each of the adjacent domains including a normal luminance region and a domain boundary region, each domain boundary region defining a partial region between adjacent domains.
  • the liquid crystal display panel 5 has a first substrate 6, a second substrate 10, and a liquid crystal layer 14 interposed between the first substrate 6 and the second substrate 10.
  • the first polarizer 8 is fabricated in the form of a film and attached to the outer surface of the first base substrate 7 facing the backlight assembly.
  • the first polarizer 8 may be applied to the inner surface of the first base substrate 7 facing the liquid crystal layer 14.
  • This embodiment differs from one of the specific embodiments 1 to 3 in that the pretilt angle of the liquid crystal molecules in the normal luminance region and the pretilt angle of the liquid crystal molecules in the domain boundary region are small.
  • the size of the normal luminance region alignment vector is smaller than the size of the domain boundary region alignment vector.
  • the normal luminance region alignment vector is obtained by adding an alignment vector of the first alignment film in the normal luminance region to an alignment vector of the second alignment film, and the domain boundary region is aligned by The alignment vector of the first alignment film in the domain boundary region of the normal luminance region is obtained by adding an alignment vector of the second alignment film.
  • This embodiment differs from one of the specific embodiments 1 to 4 in that the reticle 4 is a half-ton mask.
  • Embodiment 6 This embodiment differs from one of the specific embodiments 1 to 5 in that the half-ton mask includes a pixel area and a peripheral wiring area, and the pixel area includes a semi-transmission. region;
  • Embodiment 7 This embodiment differs from one of Embodiments 1 to 6 in that the light transmittance of the semi-transmissive region of the half-ton mask is from the edge away from the pixel region. The direction of the edge of the pixel area decreases.
  • the technical scheme of the invention can effectively avoid the thinness of the channel photoresist in the pixel region near the peripheral wiring area of the TFT-LCD array substrate, and the source-drain channel semiconductor is easily missing after the etching process, thereby improving the appearance of the TFT-LCD. Poor pixel lighting.
  • Embodiment 8 This embodiment differs from one of Embodiments 1 to 7 in that the semi-transmissive area of the halftone mask comprises:
  • the first half of the light transmission area is the first half of the light transmission area
  • the light transmittance of the second semi-transmissive region is smaller than the light transmittance of the first semi-transmissive region.
  • the number of pixels per pixel (PPI) of the N-row chip operable area (AA) of the two N-column chips having different areas is corresponding to the area where the light transmittance of the reticle 4 is high;
  • the number of pixels per pixel (PPI) of the N-row chip operable area (AA) of the two N-column chips having different areas is different in the area where the light transmittance of the reticle 4 is low.
  • the liquid crystal pretilt angles of the two sizes are similar, avoiding problems such as poor diffusion of liquid crystals or broken bright spots, as shown in FIG. 6.
  • UV ultraviolet
  • UV Ultraviolet light
  • A-ray, B-ray, and C-ray UVA, UVB, and UVC for short
  • the wavelength ranges are 400-315 nm, 315-280 nm, and 280-190 nm, respectively.
  • a method for improving the optical alignment of a sleeve-cut panel is specifically prepared according to the following steps:
  • AR is augmented reality (AR technology, short for Augmented Reality).

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

一种改善套切面板光配向性的装置，其包括套切基板(1)、N列芯片一(2)、N列芯片二(3)，还包括光罩(4)； N列芯片一(2)和N列芯片二(3)交替依次排列形成交替排列结构，安装在套切基板(1)上；芯片二(3)的面积大于芯片一(2)的面积；光罩(4)用于罩住N列芯片一(2)和N列芯片二(3)，使紫外光透过光罩照射N列芯片一(2)和N列芯片二(3)；其中，N为正整数。因此，改善套切面板光配向的装置可用于薄膜晶体管液晶显示的制造领域。

Description

一种改善套切面板光配向性的装置
相关申请的交叉引用
本申请要求享有于2016年08月31日提交的名称为“一种改善套切面板光配向性的装置”的中国专利申请CN2016107997937的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明涉及显示技术领域，尤其涉及改善套切面板光配向性的装置。
背景技术
液晶显示模块包括：液晶显示面板，通过根据液晶层中产生的电场改变液晶层中的液晶分子的排列来在液晶显示面板上显示图像；背光组件，用于提供光到液晶显示面板；以及壳，液晶显示面板和背光组件固定在壳中。
液晶显示面板包括液晶层、液晶层插设在其间的一对基板、以及附着到基板的外部的一对偏振器。在液晶显示面板上显示的图像期望不管从哪个方向观看都具有相同的显示质量。为此，已经进行了许多尝试。例如，已经开发了垂直配向(VA)模式的液晶显示器和面线转换(PlanetoLineSwitching，PLS)模式的液晶显示器，垂直配向模式的液晶显示器利用液晶分子相对于基板的垂直性，面线转换模式的液晶显示器利用液晶分子相对于基板的水平性。因为这些显示器的液晶分子在不同的方向上具有相似的折射率各向异性特性，所以垂直配向(VA)模式的液晶显示器和面线转换(PlanetoLineSwitching，PLS)模式的液晶显示器具有宽视角。
为了更加改善的视角特性，金属线图案、有机膜制成的狭缝或突起形成在单位像素上使得液晶分子可以在不同方向上具有相似的斜度。然而，由于液晶分子受到弥散场(fringefield)的影响，所以图案、狭缝或突起会降低开口率，开口率是从背光组件提供的光穿过单位像素的区域与单位像素的总面积的比。这里使用的术语“单位像素”可以指液晶显示面板的表现基本颜色的像素。
液晶分子应总是关于相同电势保持相同排列。为此，预倾斜(pretilt)形成在基板上的配向膜中以固定位于基板附近的液晶分子的方向和斜度。配向膜的预倾斜 通过在预先形成在基板上的配向材料上物理摩擦摩擦布(rubbingcloth)而形成。然而，因为由于接触而可能引入外部物质或产生静电在配向层上，所以使用摩擦布的方法会降低液晶显示面板的产率。此外，摩擦布频繁更换，导致工艺时间和成本的增加。
为了提高液晶面板的产率，已经引入了光致配向工艺。光致配向工艺使用非接触法形成配向膜的预倾斜，而不在像素区域中形成图案、狭缝或突起。光致配向工艺包括应用光反应材料到基板上且倾斜地照射紫外(UV)光到其上应用光反应材料的表面。配向膜的预倾斜根据照射的方向形成。因而，通过将单位像素分成若干区域并在不同方向上照射光到其上，液晶分子可以倾斜在若干不同方向上。
单位像素具有形成在一基板上的像素电极、形成在与像素电极的基板间隔开的另一透明基板上的公共电极、以及插设在两个基板之间的液晶层。像素电极形成在布置于一基板上的多个单位像素中的每个上，同时公共电极形成在另一基板的整个表面上，导致弥散场形成在像素电极的边缘和公共电极之间。受弥散场影响的液晶分子独立地排列而没有被像素电势影响，且阻挡从背光组件提供的光，形成正常亮度没有出现在域中的弥散场纹理(FFT)。
各个域的预倾斜的方向被匹配到附着到液晶显示面板的基板的偏振器的偏振轴。由于各个域的预倾斜基本垂直于至少一个偏振轴，所以穿过域边界纹理(DBT)或像素电极边缘附近的液晶分子的光不垂直于偏振器的偏振轴。结果，在域边界纹理(DBT)中或在域的边缘附近，亮度会局部减小。
单位像素的开口率通过将单位像素的具有正常亮度的面积除以单位像素的总面积来计算。单位像素的光透射率通过将穿过单位像素的光的亮度除以在光穿过单位像素之前背光组件的亮度来计算。域边界纹理(DBT)和弥散场纹理(FFT)二者都导致单位像素的亮度降低，引起多域单位像素的开口率和光透射率的减小。
在光致配向工艺中，预倾斜的角度或预倾斜角根据照射光的强度和/或照射时间来确定。如果预倾斜角过大，则较远离配向膜的分子会被错误地排列而不与施加到像素电极的电势一致。结果，单位像素会显示高于或低于正常亮度的亮度，降低液晶显示面板的对比度并导致黑残影现象，在黑残影现象中，当表示黑图像的信号提供到像素电极时在单位像素中出现灰色。
随着大尺寸液晶电视越来越受到消费者的喜爱，大尺寸液晶电视的市场具有 着良好的发展态势。但同时也伴随着大尺寸面板生产大板利用率偏低的问题，生产成本偏高，也使大尺寸液晶电视单价偏高限制其市场发展。
目前是采用面板套切技术改善这一缺陷，即将大尺寸面板与小尺寸面板合在一个大板生产，大大降低了大尺寸液晶电视生产成本，如图1。但是由于面板尺寸的差异，在同一可视区固化(VA curing，VA全拼为View Area)条件下，由于面板可操作区(AA，AA全拼为Active Area)区每英寸所拥有的像素数目(PPI)大小的差异影响液晶预倾角的大小不同，影响着面板的性能，如图2，图3。
传统的可视区固化(VA curing)过程，首先将可视区(VA)液晶中参入一定比例的高纯度反应型液晶(趋光性单体)，此种液晶既有普通液晶分子的液晶核，又在末端带有一个或多个亚克力基之类的可反应光能基；随后上下基板之间外加一个电压，使液晶分子产生一个预倾角度，对应像素不同的畴，液晶分子倾向不同，随后进行特定波长范围内的紫外光(UV)从薄膜晶体管(TFT)侧照射后，反应型液晶聚合成高分子网络吸引表层的液晶分子形成固定的预倾角。
尺寸不同的芯片可操作区(Chip AA)内部每英寸所拥有的像素数目(PPI，PPI全拼为pixels per inch)也不同，在可视区固化(VA curing)过程中光透过率也随之有所差别。每英寸所拥有的像素数目(PPI)越大，薄膜晶体管(TFT)侧开口面积越小，光透过率越小，液晶的预倾角越小，存在液晶扩散不良的风险，如图2；每英寸所拥有的像素数目(PPI)越小，薄膜晶体管(TFT)侧开口面积越大，光透过率越大，液晶的预倾角越大，存在碎亮点的风险，如图3。
每英寸所拥有的像素数目(PPI)是图像分辨率的单位，因此每英寸所拥有的像素数目(PPI)数值越高，即代表显示屏能够以越高的密度显示图像。
发明内容
针对上述现有技术中的问题，本申请提出了一种改善套切面板光配向性的装置。
一种改善套切面板光配向性的装置，包括套切基板、N列芯片一、N列芯片二，其中还包括光罩；
所述N列芯片一和N列芯片二交替依次排列形成交替排列结构，安装在套切基板上；
所述芯片二的面积大于芯片一的面积；
所述光罩用于罩住N列芯片一和N列芯片二，使紫外光透过光罩照射N列芯片一和N列芯片二；
所述N为正整数。
所述两种面积不同的N列芯片可操作区内部每英寸所拥有的像素数目不同。
所述像素包括：形成在第一基板上的第一配向膜以及形成在第二基板上且面对所述第一配向膜的第二配向膜；
多个相邻域，所述相邻域中的每个包括正常亮度区域和域边界区域，每个域边界区域定义相邻域之间的部分区域。
所述正常亮度区域中的液晶分子的预倾斜角和所述域边界区域中的液晶分子的预倾斜角相同。
所述光罩为半色调掩膜光罩。
所述半色调掩膜光罩包括像素区和外围走线区，所述像素区包括半透光区域。
所述半色调掩膜光罩的半透光区域的透光率从远离像素区边缘到所述像素区边缘的方向上减小。
所述半色调掩膜光罩的半透光区域包括：
第一半透光区域；
第二半透光区域；
所述第二半透光区域的透光率小于第一半透光区域的透光率。
所述两种面积不同的N列芯片中面积大的N列芯片可操作区内部每英寸所拥有的像素数目对应半色调掩膜光罩的第一半透光区域；
所述两种面积不同的N列芯片中面积小的N列芯片可操作区内部每英寸所拥有的像素数目对应半色调掩膜光罩的第二半透光区域。
所述紫外光波长范围为190nm-400nm。
有益效果：
本发明从调整套切基板上不同尺寸芯片(Chip)的紫外光照射强度出发，在大板与光源之间加一个半色调掩膜(Half-ton)光罩，如图4，在每英寸所拥有的像素数目(PPI)较大的面积芯片(Chip)上对应光罩穿透率高的区域，每英寸所拥有的像素数目(PPI)较小的面积芯片(Chip)上对应光罩穿透率低的区域，最终达到通过改变光透过率，使得两种尺寸的液晶预倾角相近，避免引起液 晶扩散不良或碎亮点等问题，如图5。
本发明通过对一个像素单元的不同像素区域进行不同强度的光配向，从而使整个像素单元的配向相同，提高该栅单位像素的显示质量。
本发明修改可视区固化(VA curing)时光透过率，两种尺寸芯片(Chip)内液晶预倾角相近，如图6，避免引起液晶扩散不良或碎亮点等问题。
本发明在可视区固化(VA curing)时大板与光源之间加一个半色调掩膜(Half-ton)光罩，每英寸所拥有的像素数目(PPI)较大的尺寸芯片(Chip)上对应光罩穿透率高的区域，每英寸所拥有的像素数目(PPI)较小的面积面板上对应光罩穿透率低的区域，调整相对穿透率大小，如图5。
相比传统的套切面板可视区固化(VA curing)，可以通过调整光配向紫外光相对穿透率大小，两种面积芯片(Chip)得到相近的液晶预倾角，如图6，降低引起液晶扩散不良或碎亮点的风险。
上述技术特征可以各种适合的方式组合或由等效的技术特征来替代，只要能够达到本发明的目的。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1为套切基板示意图；
图2为像素数目(PPI)较大的尺寸面板液晶预倾倒向示意图；
图3为像素数目(PPI)较小的尺寸面板液晶预倾倒向示意图；
图4为本发明套切面板光配向性装置图；
图5为本发明套切基板增加光罩示意图；
图6为本发明面板液晶预倾倒向示意图；
图7为本发明像素数目(PPI)较大的尺寸面板液晶预倾倒向示意图；
图8为本发明像素数目(PPI)较小的尺寸面板液晶预倾倒向示意图；
图9为液晶显示面板的局部横截面的透视图。
在附图中，相同的部件使用相同的附图标记。附图并未按照实际的比例。
具体实施方式
下面将结合附图对本发明作进一步说明。
具体实施方式一：结合图4、图5、图6、图7说明本实施方式，本实施方式的一种改善套切面板光配向性的装置，包括套切基板1、N列芯片一2、N列芯片二3，其中还包括光罩4；
所述N列芯片一(2)和N列芯片二(3)交替依次排列形成交替排列结构，安装在套切基板1上；
所述芯片二3的面积大于芯片一2的面积；
所述光罩4用于罩住N列芯片一(2)和N列芯片二3，使紫外光透过光罩照射N列芯片一2和N列芯片二3；
所述N为正整数。
具体实施方式二：本实施方式与具体实施方式一不同的是：所述两种面积不同的N列芯片(Chip)可操作区(AA)内部每英寸所拥有的像素数目(PPI)不同。
每英寸所拥有的像素数目(PPI)大小的差异影响液晶预倾角的大小不同。
其它步骤及参数与具体实施方式一相同。
具体实施方式三：本实施方式与具体实施方式一或二不同的是：
所述像素包括：
形成在第一基板上的第一配向膜以及形成在第二基板上且面对所述第一配向膜的第二配向膜；
多个相邻域，所述相邻域中的每个包括正常亮度区域和域边界区域，每个域边界区域定义相邻域之间的部分区域。
图9是液晶显示面板的局部横截面的透视图，其示出液晶层与具有偏振器和配向膜的基板的组合。参照图9，液晶显示面板5具有第一基板6、第二基板10以及插设在第一基板6与第二基板10之间的液晶层14。
如图9所示，第一偏振器8以薄膜的形式制造并附着到第一基底基板7的面对背光组件的外表面。备选地，第一偏振器8可以应用到第一基底基板7的面对液晶层14的内表面上。
其它步骤及参数与具体实施方式一或二相同。
具体实施方式四：本实施方式与具体实施方式一至三之一不同的是：所述正常亮度区域中的液晶分子的预倾斜角和所述域边界区域中的液晶分子的预倾斜角小相同。
所述正常亮度区域配向矢的大小小于域边界区域配向矢的大小。
所述正常亮度区域配向矢通过将所述正常亮度区域中的所述第一配向膜的配向矢加上所述第二配向膜的配向矢而获得，所述域边界区域配向矢通过将邻近所述正常亮度区域的所述域边界区域中的所述第一配向膜的配向矢加上所述第二配向膜的配向矢而获得。
其它步骤及参数与具体实施方式一至三之一相同。
具体实施方式五：本实施方式与具体实施方式一至四之一不同的是：所述光罩4为半色调掩膜(Half-ton)光罩。
其它步骤及参数与具体实施方式一至四之一相同。
具体实施方式六：本实施方式与具体实施方式一至五之一不同的是：所述半色调掩膜(Half-ton)光罩包括像素区和外围走线区，所述像素区包括半透光区域；
其它步骤及参数与具体实施方式一至五之一相同。
具体实施方式七：本实施方式与具体实施方式一至六之一不同的是：所述半色调掩膜(Half-ton)光罩的半透光区域的透光率按照从远离像素区边缘到所述像素区边缘的方向上减小。
本发明的技术方案能够有效避免TFT-LCD阵列基板外围走线区附近像素区域沟道光刻胶偏薄，经刻蚀工艺后易发生源漏极沟道半导体缺失，从而改善TFT-LCD出现的像素点灯不良现象。
其它步骤及参数与具体实施方式一至六之一相同。
具体实施方式八：本实施方式与具体实施方式一至七之一不同的是：所述半色调掩膜光罩的半透光区域包括：
第一半透光区域；
第二半透光区域；
所述第二半透光区域的透光率小于第一半透光区域的透光率。
其它步骤及参数与具体实施方式一至七之一相同。
具体实施方式九：本实施方式与具体实施方式一至八之一不同的是：
所述两种面积不同的N列芯片(Chip)中面积大的N列芯片可操作区(AA)内部每英寸所拥有的像素数目(PPI)对应光罩4透光率高的区域；
所述两种面积不同的N列芯片(Chip)中面积小的N列芯片可操作区(AA)内部每英寸所拥有的像素数目(PPI)对应光罩4透光率低的区域。
最终达到通过改变光透过率，使得两种尺寸的液晶预倾角相近，避免引起液晶扩散不良或碎亮点等问题，如图6。
其它步骤及参数与具体实施方式一至八之一相同。
具体实施方式十：本实施方式与具体实施方式一至九之一不同的是：所述紫外光(UV)波长范围为400nm-190nm。
紫外光(UV)被划分为A射线、B射线和C射线(简称UVA、UVB和UVC)，波长范围分别为400-315nm,315-280nm,280-190nm。
其它步骤及参数与具体实施方式一至九之一相同。
本实施例一种改善套切面板光配向性方法具体是按照以下步骤制备的：
表1 AR对比表
Figure PCTCN2016107092-appb-000001
AR是增强现实(AR技术，Augmented Reality的简称)。
虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。

Claims (10)

  1. 一种改善套切面板光配向性的装置，包括套切基板(1)、N列芯片一(2)、N列芯片二(3)，其中还包括光罩(4)；
    所述N列芯片一(2)和N列芯片二(3)交替依次排列形成交替排列结构，安装在套切基板(1)上；
    所述芯片二(3)的面积大于芯片一(2)的面积；
    所述光罩(4)用于罩住N列芯片一(2)和N列芯片二(3)，使紫外光透过光罩照射N列芯片一(2)和N列芯片二(3)；
    所述N为正整数。
  2. 根据权利要求1所述的改善套切面板光配向性的装置，其中：所述两种面积不同的N列芯片可操作区内部每英寸所拥有的像素数目不同。
  3. 根据权利要求2所述的改善套切面板光配向性的装置，其中：所述像素包括：形成在第一基板上的第一配向膜以及形成在第二基板上且面对所述第一配向膜的第二配向膜；
    多个相邻域，所述相邻域中的每个包括正常亮度区域和域边界区域，每个域边界区域定义相邻域之间的部分区域。
  4. 根据权利要求3所述的改善套切面板光配向性的装置，其中：所述正常亮度区域中的液晶分子的预倾斜角和所述域边界区域中的液晶分子的预倾斜角相同。
  5. 根据权利要求4所述的改善套切面板光配向性的装置，其中：所述光罩(4)为半色调掩膜光罩。
  6. 根据权利要求5所述的改善套切面板光配向性的装置，其中：所述半色调掩膜光罩包括像素区和外围走线区，所述像素区包括半透光区域。
  7. 根据权利要求6所述的改善套切面板光配向性的装置，其中：所述半色调掩膜光罩的半透光区域的透光率从远离像素区边缘到所述像素区边缘的方向减小。
  8. 根据权利要求7所述的改善套切面板光配向性的装置，其中：所述半色调掩膜光罩的半透光区域包括：
    第一半透光区域；
    第二半透光区域；
    所述第二半透光区域的透光率小于第一半透光区域的透光率。
  9. 根据权利要求8所述的改善套切面板光配向性的装置，其中：所述两种面积不同的N列芯片中面积大的N列芯片可操作区内部每英寸所拥有的像素数目对应半色调掩膜光罩的第一半透光区域；
    所述两种面积不同的N列芯片中面积小的N列芯片可操作区内部每英寸所拥有的像素数目对应半色调掩膜光罩的第二半透光区域。
  10. 根据权利要求9所述的改善套切面板光配向性的装置，其中：所述紫外光波长范围为190nm-400nm。
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