WO2018004276A1 - Composant de puce et son procédé de fabrication - Google Patents

Composant de puce et son procédé de fabrication Download PDF

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Publication number
WO2018004276A1
WO2018004276A1 PCT/KR2017/006909 KR2017006909W WO2018004276A1 WO 2018004276 A1 WO2018004276 A1 WO 2018004276A1 KR 2017006909 W KR2017006909 W KR 2017006909W WO 2018004276 A1 WO2018004276 A1 WO 2018004276A1
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WO
WIPO (PCT)
Prior art keywords
laminate
chip component
surface modification
modification member
oxide
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Application number
PCT/KR2017/006909
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English (en)
Korean (ko)
Inventor
백정철
이정훈
김정채
김주성
Original Assignee
주식회사 모다이노칩
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 주식회사 모다이노칩 filed Critical 주식회사 모다이노칩
Priority to CN201780040170.4A priority Critical patent/CN109478465B/zh
Publication of WO2018004276A1 publication Critical patent/WO2018004276A1/fr

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/40Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G29/00Compounds of bismuth
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G45/00Compounds of manganese
    • C01G45/02Oxides; Hydroxides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00Compounds of cobalt
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00Compounds of cobalt
    • C01G51/40Cobaltates
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00Compounds of zinc
    • C01G9/02Oxides; Hydroxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type 
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/14Protection against electric or thermal overload
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/228Terminals
    • H01G4/232Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/30Stacked capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type 
    • H01F2017/0093Common mode choke coil

Definitions

  • the present invention relates to a chip component and a method for manufacturing the same, and more particularly, to a chip component capable of controlling the shape of an external electrode and a manufacturing method thereof.
  • a plurality of chip components are used to suppress noise of various frequencies of the portable electronic device and to suppress noise between internal circuits.
  • chip beads, a common mode filter, and the like which remove noise of different frequency bands, are used.
  • an ESD protection element such as a varistor, a suppressor, or the like is required to protect the electronic device from high voltage such as ESD applied to the electronic device from the outside.
  • ESD protection element such as a varistor, a suppressor, or the like is required to protect the electronic device from high voltage such as ESD applied to the electronic device from the outside.
  • at least two or more layers having different characteristics may be stacked to fabricate the chip components. For example, noise filters and ESD protection devices are stacked on one chip to implement chip components.
  • the chip component is formed with an external electrode on the outside of the laminate in which a predetermined structure is formed therein, and is connected to the internal circuit of the electronic device through the external electrode.
  • the external electrode may be formed by a plating process.
  • the chip component may be soldered and mounted on a PCB substrate of an electronic device.
  • an external electrode is formed by a plating process.
  • the surface of a laminated body has a nonuniform resistance state, and when a plating process is performed in this state, the nonuniformity of plating layer growth will generate
  • the present invention provides a chip component and a method of manufacturing the same that facilitate the shape control of an external electrode.
  • the present invention provides a chip component and a method of manufacturing the same, the surface of which is easily modified to control the shape of the external electrode.
  • Chip component is a laminate; And a surface modification member formed on at least one region of the laminate, wherein the surface modification member is formed to expose at least a portion of the surface of the laminate.
  • the laminate In the laminate, a plurality of sheets are stacked, and a layer of material different from the sheets is formed in the laminate.
  • the heterogeneous material layer includes a conductive pattern and an overvoltage protection material layer having a predetermined shape.
  • the surface modification member is distributed in an area of 5% to 90% of the surface area of the laminate.
  • the surface modification member includes at least one of an oxide in a crystalline state and an amorphous state.
  • the oxide is Bi 2 O 3 , BO 2 , B 2 O 3 , ZnO, Co 3 O 4 , SiO 2 , Al 2 O 3 , MnO, H 2 BO 3 , Ca (CO 3 ) 2 , Ca (NO 3 ) 2 , CaCO 3 .
  • the oxide is at least partially embedded in the surface of the laminate.
  • the oxide is aggregated or connected in at least one region of particles having at least one size.
  • the average size of the oxide particles is 0.1 ⁇ m to 10 ⁇ m.
  • the second surface modification member is formed on at least one sheet constituting the laminate.
  • a chip component includes a laminate in which a plurality of sheets are stacked; A heterogeneous material layer formed inside the laminate and formed of a material different from that of the sheet; And an external electrode formed on at least one side of the laminate, wherein the laminate has at least one surface having two or more components.
  • a surface modification member formed on at least one side of the laminate to expose at least a portion of the laminate surface.
  • the surface modification member includes an oxide.
  • the oxide is formed to a thickness of 0.01% to 10% of the laminate thickness.
  • a method of manufacturing a chip component comprising: providing a plurality of chip components; Forming a surface modification member on at least one surface of the plurality of chip components, wherein the surface modification member is formed such that at least a portion of the surface of the chip component is exposed.
  • the surface modification member is formed by injecting and rotating the plurality of chip components and oxide powder into a container.
  • a plurality of mediators are further added together with the plurality of chip components and the oxide powder.
  • the plurality of mediators consist of the chip component and the oxide powder and a heterogeneous material.
  • the plurality of mediators have a total volume greater than the total volume of the oxide powder and less than the total volume of the plurality of laminates.
  • Chip components according to the embodiments of the present invention can form a surface modification member on the surface of the laminate, thereby controlling the shape of the external electrode. That is, by forming a surface modification member on the surface of the laminate to modify the surface of the laminate, it is possible to prevent the spreading and spreading of the external electrode formed by plating, thereby easily controlling the shape of the external electrode. .
  • the present invention can prevent the penetration of moisture into the laminate by forming a surface modification member, thereby improving the life and reliability of the chip component.
  • FIG. 1 is a perspective view of a chip component according to an embodiment of the present disclosure.
  • FIG. 2 is a schematic view of the surface of a chip component according to an embodiment of the present disclosure.
  • 3 to 5 is an exploded perspective view of a chip component according to embodiments of the present invention.
  • FIG. 6 is a flowchart illustrating a method of manufacturing a chip component according to an embodiment of the present disclosure.
  • 10 and 11 are schematic views showing the shape of the surface modification member and the surface of the laminate according to the size of the media and without the media.
  • FIG. 1 is a perspective view of a chip component according to an exemplary embodiment
  • FIG. 2 is a schematic surface view of the chip component.
  • a chip component may include a laminate 1000 in which a plurality of sheets are stacked, and a surface modification member 2000 formed on at least one surface of the laminate 1000. And an external electrode 3000 formed on at least one surface of the laminate 1000.
  • the laminate 1000 has a predetermined length and width, respectively, in one direction (for example, the X direction) and the other direction (for example, the Y direction) orthogonal thereto, and in the vertical direction (for example, the Z direction). It may be provided in a substantially hexahedral shape having a height of. That is, when the forming direction of the external electrode 3000 is the X direction, that is, the length, the direction orthogonal to the horizontal direction may be the Y direction, and the vertical direction may be the Z direction, that is, the thickness.
  • the length in the X direction may be greater than or equal to, for example, the width in the Y direction and the height in the Z direction, and the width in the Y direction may be the same as or different from the height in the Z direction. If the width (Y direction) and the height (Z direction) are different, the width may be larger or smaller than the height.
  • the ratio of length, width and height may be 1-5: 1: 0.5-2. That is, the length may be about 1 to 5 times greater than the width, and the height may be 0.5 to 2 times greater than the width.
  • the laminate 1000 may be formed by stacking a plurality of substantially plate-shaped sheets having a predetermined size. That is, the sheet may be provided in a substantially rectangular plate shape having a predetermined length and width in the X and Y directions and having a predetermined thickness in the Z direction. A plurality of such sheets may be stacked to form a substantially hexahedral stack 1000.
  • the plurality of sheets constituting the laminate 1000 may include at least one of dielectric material powder such as MLCC, BaTiO 3 , BaCO 3 , TiO 2 , Nd 2 O 3 , Bi 2 O 3 , Zn0, and Al 2 O 3 . It may be formed of a material containing. Accordingly, the sheets may each have a predetermined dielectric constant, for example, 5 to 20000, preferably 7 to 5000, and more preferably 200 to 3000. In addition, the plurality of sheets may be made of a varistor material. For example, the sheet may be formed by adding additives such as Bi 2 O 3 , Pr 6 O 11 , CoO, MnO, and the like to the ZnO powder.
  • dielectric material powder such as MLCC, BaTiO 3 , BaCO 3 , TiO 2 , Nd 2 O 3 , Bi 2 O 3 , Zn0, and Al 2 O 3 . It may be formed of a material containing. Accordingly, the sheets may each have a pre
  • the plurality of sheets may be nonmagnetic sheets or magnetic sheets. That is, it may be a nonmagnetic sheet formed of a material as described above and having a predetermined dielectric constant, or may be a magnetic sheet further comprising a magnetic material. Of course, at least one of the plurality of sheets may be formed of a magnetic sheet or a nonmagnetic sheet according to the use of the chip component. In addition, the plurality of sheets may be formed of a mixture of metal powder and polymer. As described above, the plurality of sheets may be formed of various materials according to the purpose of the chip component. In addition, the plurality of sheets may all be formed with the same thickness, and at least one may be formed thicker or thinner than the others.
  • various structures may be formed in the plurality of sheets in the laminate 1000. That is, various types of conductive patterns may be formed in the laminate 1000, and an ESD protection material may be formed. In other words, at least one heterogeneous material layer having a different component from the sheet of the laminate 1000 may be formed in the laminate 1000. For example, a spiral coil pattern and a hole filled with a conductive material may be selectively formed in the plurality of sheets in the stack 1000, and thus an inductor or a noise filter may be implemented. In addition, a structure for protecting a high voltage such as a varistor or an ESD protection unit may be implemented in the stack 1000.
  • a plurality of inner electrodes may be formed on the plurality of sheets in the stack 1000 so as to be alternately connected to the external electrodes 3000, and thus capacitors formed by two adjacent inner electrodes and a sheet therebetween may be formed.
  • a substrate having a coil pattern formed on at least one surface may be provided in the stack 1000, and a sheet made of metal powder and a polymer may be stacked thereon to form a power inductor.
  • One of the inductor, the noise filter, the capacitor, the power inductor, the varistor, and the ESD protection unit may be implemented in the stack 1000, or at least two or more of them may be implemented in combination.
  • the laminate 1000 may further include a lower cover layer (not shown) and an upper cover layer (not shown) formed on the lowermost layer and the uppermost layer.
  • the lowermost sheet may serve as the lower cover layer
  • the uppermost sheet may serve as the upper cover layer.
  • the lower and upper cover layers may be provided by stacking a plurality of magnetic sheets, and may have the same thickness.
  • a nonmagnetic sheet for example, a glass sheet, may be further formed on the outermost portion of the lower and upper cover layers formed of the magnetic sheet, that is, the lower and upper surfaces.
  • the lower and upper cover layers may be thicker than the sheets therein.
  • the surface modification member 2000 may be formed on at least one surface of the laminate 1000.
  • the surface modification member 2000 may be formed by, for example, distributing an oxide on the surface of the laminate 1000 before forming the external electrode 3000.
  • the oxide may be dispersed and distributed on the surface of the laminate 1000 in a crystalline state or an amorphous state.
  • the surface modification member 2000 may be distributed on the surface of the stack 1000 before the plating process when the external electrode 3000 is formed by the plating process. That is, the surface modification member 2000 may be distributed before forming a part of the external electrode 3000 in the printing process, or may be distributed before the plating process after the printing process.
  • the plating process may be performed after the surface modification member 2000 is distributed. In this case, at least a portion of the surface modification member 2000 distributed on the surface may be melted.
  • the surface modification member 2000 may be evenly distributed on the surface of the stack 1000 with at least a portion having the same size as shown in FIG. 2A, and as shown in FIG. 2B. Likewise, at least some may be irregularly distributed in different sizes.
  • a recess may be formed on at least part of the surface of the laminate 1000. That is, the surface modification member 2000 may be formed to form a convex portion, and at least a portion of the region where the surface modification member 2000 is not formed may be recessed to form a recess. In this case, at least a portion of the surface modification member 2000 may be formed deeper than the surface of the laminate 1000.
  • the surface modification member 2000 may be formed with a predetermined thickness to be embedded at a predetermined depth of the laminate 1000 and the remaining thickness higher than the surface of the laminate 1000.
  • the thickness of the laminate 1000 may be 1/20 to 1 of the average diameter of the oxide particles.
  • the oxide particles may be all embedded in the stack 1000 as illustrated in FIG. 2D, and at least some may be embedded.
  • the oxide particles may be formed only on the surface of the laminate 1000 as shown in FIG. Therefore, the oxide particles may be formed in a hemispherical shape on the surface of the laminate 1000, or may be formed in a spherical shape.
  • the surface modification member 2000 may be partially distributed on the surface of the laminate 1000 as described above, or may be distributed in a film form on at least one region. That is, as illustrated in FIGS. 2A to 2D, the oxide particles may be distributed in the form of islands on the surface of the laminate 1000 to form the surface modification member 2000. That is, oxides in a crystalline state or an amorphous state may be distributed in an island form on the surface of the laminate 1000, and thus at least a portion of the surface of the laminate 1000 may be exposed. In addition, as illustrated in FIG. 2E, at least two or more surface modification members 2000 may be connected to each other to form an oxide, and at least a portion of the oxide may be formed in an island shape.
  • At least two or more oxide particles may be aggregated or adjacent oxide particles may be connected to form a film.
  • the oxide is present in the form of particles or when two or more particles are aggregated or connected, at least a part of the surface of the laminate 1000 is exposed to the outside by the surface modifying member 2000.
  • the total area of the surface modification member 2000 may be, for example, 5% to 90% of the total area of the surface of the laminate 1000.
  • Plating bleeding of the surface of the laminate 1000 may be controlled according to the area of the surface modifying member 2000.
  • the conductive pattern and the external electrode (the inside of the laminate 1000) may be controlled. 3000) can be difficult to contact. That is, when the surface modification member 2000 is formed to be less than 5% of the surface area of the laminate 1000, it is difficult to control the plating bleeding phenomenon.
  • the electrode 3000 may not be in contact. Therefore, the surface modification member 2000 may control the plating bleeding phenomenon and may be formed in an area that can be in contact with the conductive pattern inside the laminate 1000 and the external electrode 3000.
  • the surface modification member 2000 may be formed of 10% to 90% of the surface area of the laminate 1000, preferably 30% to 70% of the surface area, more preferably 40% to It can be formed with an area of 50%.
  • the surface area of the laminate 1000 may be one surface area, or may be the six surface areas of the laminate 1000 forming a hexahedron.
  • the surface modification member 2000 may be formed to a thickness of 10% or less of the thickness of the laminate 1000. That is, the surface modification member 2000 may be formed to a thickness of 0.01% to 10% of the thickness of the laminate 1000.
  • the surface modification member 2000 may be present in a size of 0.1 ⁇ m to 50 ⁇ m, and thus the surface modification member 2000 may be formed to a thickness of 0.1 ⁇ m to 50 ⁇ m from the surface of the laminate 1000. have. That is, the surface modification member 2000 may be formed to have a thickness of 0.1 ⁇ m to 50 ⁇ m from the surface of the laminate 1000 except for a region that is less than the surface of the laminate 1000. Therefore, when the thickness of the laminated body 1000 is embedded, the surface modification member 2000 may have a thickness greater than 0.1 ⁇ m to 50 ⁇ m.
  • the surface modification member 2000 When the surface modification member 2000 is formed to a thickness less than 0.01% of the thickness of the laminate 1000, it is difficult to control the plating bleeding phenomenon, and when the surface modified member 2000 is formed to a thickness exceeding 10% of the thickness of the laminate 1000, the laminate The conductive pattern inside the 1000 and the external electrode 3000 may not contact each other. That is, the surface modification member 2000 may have various thicknesses according to the material properties (conductivity, semiconductivity, insulation, magnetic material, etc.) of the laminate 1000, and various thicknesses depending on the size, distribution amount, and aggregation of the oxide powder. It can have
  • the surface modification member 2000 is formed on the surface of the stack 1000, and thus, the surface of the stack 1000 may include at least two regions having different components. That is, different components may be detected in the region where the surface modification member 2000 is formed and the region where the surface modification member 2000 is not formed.
  • the region in which the surface modification member 2000 is formed may have a component according to the surface modification member 2000, that is, an oxide
  • the region in which the surface modification member 2000 is not formed may be a component according to the laminate 1000, that is, a component of the sheet. May exist.
  • the surface of the laminate 1000 may be provided with a roughness to be modified.
  • the plating process can be performed uniformly, and thus the shape of the external electrode 3000 can be controlled. That is, the surface of the laminate 1000 may have a resistance of at least one region different from that of another region. If the plating process is performed in a state where the resistance is uneven, growth unevenness of the plating layer may occur. In order to solve this problem, the surface of the laminate 1000 may be modified by dispersing oxides in a particulate state or a molten state on the surface of the laminate 1000 to form a surface modification member 2000, thereby increasing the growth of the plating layer. Can be controlled.
  • the oxide in the particulate state or in the molten state to make the surface resistance of the laminate 1000 uniform is, for example, Bi 2 O 3 , BO 2 , B 2 O 3 , ZnO, Co 3 O 4 , SiO 2 , Al At least one of 2 O 3 , MnO, H 2 BO 3 , Ca (CO 3 ) 2 , Ca (NO 3 ) 2 , and CaCO 3 may be used.
  • the surface modification member 2000 may also be formed on at least one sheet in the laminate 1000. That is, the conductive patterns of various shapes on the sheet may be formed by a plating process, and the shape of the conductive patterns may be controlled by forming the surface modification member 2000.
  • the external electrodes 3100, 3200; 3000 are provided on two opposite sides of the stack 1000 to be selectively connected to a conductive pattern formed in the stack 1000. That is, one external electrode 3000 may be formed on each of two side surfaces facing each other, for example, the first and second sides, or two or more external electrodes may be formed as shown in FIG. 1. In addition, at least one external electrode may be further formed on at least one of the third and fourth sides orthogonal to the first and second sides.
  • the external electrode 3000 may be formed of at least one layer.
  • the external electrode 3000 may be formed of a metal layer such as Ag, and at least one plating layer may be formed on the metal layer.
  • the external electrode 3000 may be formed by stacking a copper layer, a Ni plating layer, and a Sn or Sn / Ag plating layer.
  • the external electrode 3000 may be formed by mixing, for example, glass frit having a multi-component glass frit containing 0.5% to 20% of Bi 2 O 3 or SiO 2 as a main component.
  • the mixture of the glass frit and the metal powder may be prepared in a paste form and applied to two surfaces of the laminate 1000.
  • the adhesion between the external electrode 3000 and the laminate 1000 may be improved, and the contact reaction between the conductive pattern inside the laminate 1000 and the external electrode 3000 may be improved. Can be improved.
  • At least one plating layer may be formed on the upper portion thereof, thereby forming the external electrode 3000. That is, the metal layer including the glass and at least one plating layer formed thereon may be formed to form the external electrode 3000.
  • the external electrode 3000 may sequentially form a Ni plating layer and a Sn plating layer through electrolytic or electroless plating after forming a layer including glass frit and Ag and Cu.
  • the Sn plating layer may be formed to the same or thicker thickness than the Ni plating layer.
  • the external electrode 3000 may be formed of only at least one plating layer.
  • the external electrode 3000 may be formed by forming at least one layer of the plating layer using at least one plating process without applying the paste. Meanwhile, the external electrode 3000 may be formed to have a thickness of 2 ⁇ m to 100 ⁇ m, the Ni plating layer may be formed to have a thickness of 1 ⁇ m to 10 ⁇ m, and the Sn or Sn / Ag plating layer may have a thickness of 2 ⁇ m to 10 ⁇ m. Can be formed.
  • FIGS. 3 to 5 are exploded perspective views of the laminate 1000 according to an exemplary embodiment, and are exploded perspective views of a noise filter including a spiral coil pattern.
  • the stack 1000 may include various chip components such as a capacitor, a varistor, an inductor, and a power inductor.
  • the following embodiment describes an example of a common mode noise filter.
  • a plurality of sheets 110 to 150 may be stacked, and at least one coil pattern 310 to 340 may be formed on at least one selected sheet 120 to 150, respectively.
  • at least two coil patterns 310 to 340 may be connected in a vertical direction through holes 351, 352, 361, and 362 in which conductive materials are embedded.
  • the first coil pattern 310 may be connected to the third coil pattern 330 through holes 351 and 352 in which the conductive material is embedded, and the second coil pattern 320 may be filled with the conductive material. It may be connected to the fourth coil pattern 340 through the holes 361 and 362.
  • lead electrodes 410 to 440 drawn outward from each coil pattern 310 to 340 may be formed to be connected to the external electrode.
  • an upper cover layer 1100 and a lower cover layer 1200 may be formed at an upper portion of the uppermost sheet 110 and a lower portion of the lowermost sheet 150, respectively.
  • the upper and lower cover layers 1100 and 1200 may be formed thicker than the thickness of each of the sheets 110 to 150.
  • an ESD protection unit may be further formed in the stack 1000. That is, the common mode noise filter and the ESD protection unit may be stacked to form a composite device.
  • the laminate 1000 connects the plurality of sheets 110 to 180, the coil patterns 310 to 340 and the coil patterns 310 to 340 respectively formed on the selected at least one sheet 120 to 150, respectively. Holes 351, 352, 361, and 362 formed by filling a conductive material, the lead electrodes 410 through 440 drawn out from the coil patterns 310 through 340, and connected to external electrodes, and the selected sheet 170.
  • the second discharge electrode 520 may be formed on the selected sheet 180 to be connected to the ESD protection layers 531 to 534.
  • the first discharge electrodes 511 to 514 are connected to an external electrode together with the plurality of lead electrodes 410 to 440, and the second discharge electrode 520 is connected to a separate external electrode.
  • a sheet 160 may be provided therebetween to separate the common mode noise filter unit and the ESD protection unit.
  • At least one capacitor electrode 610 may be further formed in the stack 1000. That is, the capacitor electrode 610 may be provided with a sheet 190 between the two coil patterns 320 and 330, may be formed on the sheet 190, and may be drawn out from the capacitor electrode 610. 610 may be formed. In addition, holes 190 and 363 in which the conductive material is embedded may be formed in the sheet 190 to connect the upper and lower coil patterns. Capacitors having a predetermined capacitance may be formed between the capacitor electrodes 610 and upper and lower coil patterns 320 and 330 with the sheets 130 and 190 interposed therebetween.
  • the chip component according to the exemplary embodiment may control the shape of the external electrode 3000 by forming the surface modification member 2000 on the surface of the laminate 1000. That is, by forming the surface modification member 2000 on the surface of the laminate 1000 to modify the surface of the laminate 1000, the spreading and spreading of the external electrode 3000 formed by plating may be prevented, Accordingly, the shape of the external electrode 3000 can be easily controlled.
  • the present invention can form a surface modification member 2000 having a different component from that of the laminate 1000 on the surface of the laminate 1000, thereby preventing the penetration of moisture into the laminate 1000, thereby preventing the It can improve the service life and reliability. Moisture resistance can be confirmed by measuring a leakage current after maintaining a chip component for a predetermined time in a high temperature and high humidity environment.
  • FIG. 8 is a flowchart illustrating a method of manufacturing a chip component according to an embodiment of the present disclosure.
  • a plurality of substantially rectangular sheets having a predetermined thickness are provided (S110).
  • the plurality of sheets may be larger than the size of the chip component. That is, after forming a some electrically conductive pattern etc. on a some sheet, it can cut to the magnitude
  • the plurality of sheets may be nonmagnetic sheets or magnetic sheets having a predetermined dielectric constant. That is, at least one of the plurality of sheets may be a nonmagnetic sheet or a magnetic sheet.
  • the plurality of sheets may be formed of a varistor material having a predetermined breakdown voltage.
  • a conductive pattern having a predetermined shape is formed on at least one sheet (S120).
  • a plurality of insulating patterns may be formed on the conductive pattern.
  • the conductive pattern may be formed in a quadrangle having a predetermined area, or may be formed in a spiral shape from the center area to the outside.
  • the conductive pattern may be formed by a screen printing method using a conductive material such as Ag, Pt, Ni, Sn, Cu, or may be formed by a plating method.
  • the surface modification member 2000 may be formed on at least one surface of the sheet before the conductive pattern is formed by the plating method.
  • the surface modification member 2000 may be formed on the surface of the sheet to modify the surface of the sheet.
  • an ESD protection member for blocking a high voltage such as an ESD may be formed on the at least one sheet.
  • the ESD protection member may be formed between two conductive patterns spaced apart in the vertical or horizontal direction.
  • the ESD protection member may be formed to fill a gap formed to penetrate the sheet, or may be formed to partially overlap them between two conductive patterns spaced apart on the sheet.
  • the ESD protection member may be a gap provided between the two conductive patterns. That is, without forming a separate material between the two conductive patterns spaced apart in the vertical or horizontal direction, it may be used as an ESD protection member by maintaining a gap therebetween.
  • a plurality of sheets on which the conductive pattern and / or the ESD protection member are formed are stacked, cut and baked to form the laminate 1000 (S130). Accordingly, an inductor or a common mode noise filter in which a plurality of spiral coils are formed may be formed, or a capacitor may be formed in which two conductive patterns form capacitance between sheets. In addition, an ESD protection unit may be formed. By stacking the plurality of sheets to form the stack 1000, chip components having various uses may be formed according to the shape of the conductive pattern, the presence or absence of an ESD protection unit, the material of the sheet, and the like.
  • the surface modification member 2000 is formed on the surface of the laminate 1000 (S140).
  • the surface modification member 2000 may be formed by dispersing an oxide on the surface of the laminate 1000, for example, Bi 2 O 3 , BO 2 , B 2 O 3 , ZnO, Co 3 O 4 , SiO 2 , Al 2 O 3, MnO, H 2 BO 3, Ca (CO 3) 2, Ca (NO 3) 2, may be used at least one of CaCO 3.
  • the oxide and the laminate 1000 are introduced into a cylinder having a predetermined space therein, and the cylinder is then moved in the horizontal direction and / or the vertical direction. By rotating, the oxide may be dispersed on the surface of the laminate 1000.
  • the barrel may be formed in a substantially cylindrical.
  • the surface modification member 2000 may be formed by performing the process at least once.
  • the amount, size, and thickness of the surface of the stack 1000 of the surface modification member 2000 may vary depending on the amount of oxide, the amount of the stack 1000, a process time, and the like. That is, the amount of the oxide and the processing time increases, the distribution amount of the surface modifying member 2000, that is, the surface area, size and thickness may increase, and as the amount of the laminate 1000 increases, the amount of distribution of the surface modifying member 2000 increases. That is, the surface area, size and thickness can be reduced.
  • the quantity of the laminated body 1000 is 20000-60000, and 2g-15g of oxides can be thrown in, and the oxide of 0 micrometer-10 micrometers thickness can be distributed on the surface of the laminated body 1000, and one laminated body ( The oxide may be applied in an amount of 50 ⁇ g to 200 ⁇ g per 1000).
  • the rotational speed may be, for example, 50 to 100 rpm, and the volume of the cylinder may be 500 to 1000 cc.
  • the process time may be 30 minutes to 2 hours.
  • the oxide when 60000 laminates 1000 having a surface area of 9.92 mm 2 are put in a predetermined cylinder together with 4 g of oxide, and then rotated for a predetermined time, the oxide is formed to a thickness of 0 ⁇ m to 4 ⁇ m, and 6.7 per surface area. About ⁇ g / mm 2 is formed to distribute oxides in an amount of about 67 ⁇ g per chip. The surface photograph at this time is shown in FIG. Further, when 60000 laminates 1000 having a surface area of 9.92 mm 2 were put in a predetermined cylinder together with 8 g of oxide, and then rotated for a predetermined time, the oxide was formed to a thickness of 1 ⁇ m to 6 ⁇ m and 13.4 ⁇ g / surface area.
  • the surface of the laminate 1000 may be pickled.
  • the pickling process is a preliminary step for modifying the surface of the stack 1000 to weakly treat the stack 1000 to form uniform pores on the surface of the stack 1000.
  • the surface modification member 2000 may further facilitate the formation of the laminate 1000.
  • a plurality of mediators may be further added together with the oxides, and the mediators may be added to uniformly distribute the oxides. In other words, when the medium is not added, the oxides may increase in agglomeration with each other if the media are unevenly distributed, but when the medium is added, the oxides may be uniformly distributed and the amount of aggregates may be reduced.
  • the medium may use a material different from that of the laminate 1000 and the surface modifying member 2000, for example, stainless steel, ceramic, or the like.
  • the medium may use a variety of forms, such as spherical, hexahedral.
  • the plurality of media may use a volume whose total volume is larger than the total volume of the oxide powder and smaller than the total volume of the stack 1000, for example, the total volume of the medium is 10% of the total volume of the stack 1000. To 90% may be used.
  • the size and spacing of the oxide dispersed in the stack 1000 can be adjusted according to the size of the mediator.
  • 10 (a) and 11 (a) are schematic cross-sectional views and planar photographs for explaining the distribution shape of the surface modifying member when no medium is used, and as shown, the surface modifying member 2000 is laminated.
  • the amount of aggregation or connection may be increased to form a film in at least one region.
  • the surface modification member 2000 may be formed on the surface of the laminate 1000 in FIGS. 10A and 10B. It is distributed more regularly than the case shown in (a) of 11, and the amount of aggregation or connection is reduced.
  • a medium having a large size as shown in FIGS.
  • the surface modification member 2000 is regularly distributed on the surface of the laminate 1000, and It is formed on the surface of the laminate 1000 in a larger size than in the case of using the small medium shown in (b) and (b) of FIG.
  • the oxide adhering to the surface of the stack 1000 is compacted so that the oxide can be attached to a predetermined depth from the surface of the stack 1000.
  • the laminated body 1000 in which the surface modification member 2000 was formed can be surface-polished as needed (S150).
  • a part of the surface modification member 2000 may be polished according to the surface polishing, thereby allowing the surface modification member 2000 to be formed in an island shape.
  • the polishing process can be carried out by a wet polishing or a dry polishing process.
  • wet polishing a plurality of laminates 1000 in which the surface modification member 2000 is formed, pure water, and an abrasive are introduced into a cylinder having a predetermined internal space, and then polished at a rotational speed of 50 to 100 rpm.
  • the polishing may be performed at a rotational speed of 100 to 200 rpm. That is, dry polishing can be performed at high speed without adding pure water.
  • the abrasive may be alumina.
  • the polishing time may vary depending on the laminate 1000, the amount of pure water and abrasives, the roughness of the abrasive, the polishing rate, etc., and the low speed and wet polishing may be performed for 30 minutes or more, and the high speed and dry polishing may be performed for 1 hour or less. Can be.
  • wet grinding can be performed for 30 minutes or more and 24 hours or less
  • dry polishing can be performed for 1 hour or more and 24 hours or less.
  • 12 and 13 are photographs of the surface of the laminate after wet polishing and dry polishing, (a) before each polishing, (b) after one hour polishing, (c) after four hours polishing, and (d) 6 After time polishing, (e) shows photographs after 24 hours polishing, respectively.
  • the polishing process may control the size and distribution of the surface modification member 2000 of the laminate 1000.
  • FIG. 14 and 15 are photographs of the external electrode shape of the chip component according to the present invention in which the surface modification member is formed and the external electrode shape of the chip component according to the conventional example in which the surface modification member is not formed.
  • the present invention in which the surface modification member is formed as shown in (a) of FIG. 14 has an insulating property of the surface of the laminate 1000 as compared with the prior art which does not form the surface modification member as shown in (b) of FIG. It is possible to further prevent the plating bleeding to control the shape of the external electrode.
  • the present invention in which the surface modification member is formed as shown in FIG. 15A shows surface roughness through surface modification as compared with the prior art in which the surface modification member is not formed as shown in FIG. 15B. The spreading phenomenon can be prevented during plating.
  • the plurality of chip parts having the surface modification member according to the present invention and the plurality of chip parts without the surface modification member according to the related art are maintained at 85 ° C. and 85% humidity. After maintaining for 12 hours at 5V voltage was applied to check the leakage current. At this time, the leakage current (cross IL) between the data line and the ground line and the leakage current between the data lines (IL) were measured, and when a current of 10 nA or more flowed, it was determined as defective.
  • Table 1 shows the results of moisture resistance according to the present invention and the conventional example.
  • the present invention can improve the moisture resistance of the chip component by forming the surface modification member, thereby improving the life and reliability of the chip component.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
  • Laminated Bodies (AREA)

Abstract

La présente invention concerne un composant de puce et son procédé de fabrication, le composant de puce comprenant un stratifié, et un élément modifié en surface formé sur au moins une région du stratifié, l'élément modifié en surface exposant au moins une portion de la surface du stratifié.
PCT/KR2017/006909 2016-07-01 2017-06-29 Composant de puce et son procédé de fabrication WO2018004276A1 (fr)

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WO2023084858A1 (fr) * 2021-11-09 2023-05-19 株式会社村田製作所 Composant électronique

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100204255B1 (ko) * 1992-12-18 1999-06-15 후지무라 마사지카, 아키모토 유미 도전성 칩형 세라믹소자 및 그 제조방법
KR20130136247A (ko) * 2012-06-04 2013-12-12 삼성전기주식회사 적층 세라믹 부품
KR20140025693A (ko) * 2012-08-22 2014-03-05 삼성전기주식회사 내부 전극용 도전성 페이스트, 이를 포함하는 적층 세라믹 전자 부품 및 그 제조 방법
WO2014147898A1 (fr) * 2013-03-19 2014-09-25 株式会社村田製作所 Composant électronique céramique stratifié
KR20160072605A (ko) * 2014-12-15 2016-06-23 주식회사 아모텍 회로 보호 소자

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5339068A (en) * 1992-12-18 1994-08-16 Mitsubishi Materials Corp. Conductive chip-type ceramic element and method of manufacture thereof
WO2004065668A1 (fr) * 2003-01-21 2004-08-05 Tdk Corporation Composition pour element capacitif a film mince, film isolant de constante dielectrique elevee, element capacitif a film mince, condensateur stratifie a film mince et procede de production d'elements capacitifs a film mince
JP2004303947A (ja) * 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 複合電子部品
KR100920220B1 (ko) * 2007-10-01 2009-10-05 주식회사 이노칩테크놀로지 회로 보호 소자
KR101124091B1 (ko) * 2009-12-10 2012-03-20 삼성전기주식회사 적층 세라믹 커패시터
JP5267511B2 (ja) * 2010-06-23 2013-08-21 Tdk株式会社 電子部品

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100204255B1 (ko) * 1992-12-18 1999-06-15 후지무라 마사지카, 아키모토 유미 도전성 칩형 세라믹소자 및 그 제조방법
KR20130136247A (ko) * 2012-06-04 2013-12-12 삼성전기주식회사 적층 세라믹 부품
KR20140025693A (ko) * 2012-08-22 2014-03-05 삼성전기주식회사 내부 전극용 도전성 페이스트, 이를 포함하는 적층 세라믹 전자 부품 및 그 제조 방법
WO2014147898A1 (fr) * 2013-03-19 2014-09-25 株式会社村田製作所 Composant électronique céramique stratifié
KR20160072605A (ko) * 2014-12-15 2016-06-23 주식회사 아모텍 회로 보호 소자

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KR20180003910A (ko) 2018-01-10
TWI645532B (zh) 2018-12-21
CN109478465A (zh) 2019-03-15
CN109478465B (zh) 2021-02-26
TW201807798A (zh) 2018-03-01

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