WO2018000925A1 - 一种基板、显示装置及基板的制造方法 - Google Patents

一种基板、显示装置及基板的制造方法 Download PDF

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WO2018000925A1
WO2018000925A1 PCT/CN2017/082179 CN2017082179W WO2018000925A1 WO 2018000925 A1 WO2018000925 A1 WO 2018000925A1 CN 2017082179 W CN2017082179 W CN 2017082179W WO 2018000925 A1 WO2018000925 A1 WO 2018000925A1
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WIPO (PCT)
Prior art keywords
substrate
metal pattern
metal
width
base
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PCT/CN2017/082179
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English (en)
French (fr)
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王英涛
姚继开
关峰
周婷婷
何晓龙
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京东方科技集团股份有限公司
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Priority to US15/567,150 priority Critical patent/US20190113668A1/en
Publication of WO2018000925A1 publication Critical patent/WO2018000925A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133504—Diffusing, scattering, diffracting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G02F1/133548—Wire-grid polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/56—Substrates having a particular shape, e.g. non-rectangular

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a substrate, a display device, and a method of manufacturing the substrate.
  • WGP Wireless-Grid-Polarizer
  • APF Advanced Polarizer Film
  • An object of the present disclosure is to provide a substrate, a display device, and a method of manufacturing the substrate, which can achieve a high transmittance and high contrast display effect of the display product, and solve the related art, wherein the display product has low transmittance and high power consumption. The problem.
  • a substrate comprising a substrate substrate and a metal wire grid array formed on the substrate substrate, the metal wire grid array comprising a plurality of metal patterns, wherein a width of one end of the metal pattern away from the substrate substrate is less than The metal pattern is adjacent to a width of one end of the base substrate.
  • the width of the metal pattern is from an end away from the substrate substrate to near the One end of the base substrate is gradually increased.
  • the shape of the cross section of the metal pattern in a direction perpendicular to the extending direction of the metal is trapezoidal, and an end of the metal pattern away from the substrate forms an upper base of the trapezoid, and the closeness of the metal pattern One end of the base substrate forms the trapezoidal lower bottom.
  • trapezoid is an isosceles trapezoid.
  • the length of the upper base of the trapezoid is half the length of the lower base of the trapezoid.
  • a shape of the cross section of the metal pattern in a direction perpendicular to the extending direction of the metal is a triangle, and an end of the metal pattern away from the substrate forms an apex of the triangle, the metal pattern being close to the One end of the base substrate forms a bottom edge of the triangle.
  • triangle is an isosceles triangle.
  • a width of the metal pattern near one end of the base substrate is 30 to 100 nm, and an arrangement period of the metal pattern is 60 to 200 nm.
  • the substrate is an array substrate or a color film substrate.
  • a display device comprising a substrate as described above.
  • the substrate in the display device is an array substrate.
  • a method of manufacturing a substrate comprising:
  • a metal wire grid array including a plurality of metal patterns is formed on the base substrate, a width of one end of the metal pattern away from the base substrate being smaller than a width of an end of the metal pattern close to the base substrate.
  • forming a metal wire grid array including a plurality of metal patterns on the base substrate includes:
  • etching gas composition is adjusted in a preset adjustment manner during the dry etching process to control the dry etching speed so that the formed metal pattern is away from the substrate a width of one end of the substrate is smaller than the metal pattern is close to the base substrate The width of one end.
  • the etching gas composition is adjusted according to a preset adjustment manner during the dry etching process to control the dry etching speed, so that the width of the formed metal pattern away from the one end of the base substrate is smaller than the metal pattern is close to the substrate.
  • the width of one end of the substrate specifically includes:
  • the effective dry gas component in the etching gas is increased to perform rapid dry etching on the metal layer, and then the effective dry etching in the etching gas is reduced according to a preset adjustment manner.
  • the gas composition is used to slowly dry the metal layer to finally obtain the metal pattern.
  • the display product by improving the shape of the metal pattern in the metal wire grid array, the display product has high transmittance and high contrast display effect, and the display product in the related art has low transmittance and high power consumption. problem.
  • 1 is a schematic view showing the structure of a metal wire grid array on a display substrate
  • FIG. 2 is a schematic structural view of a metal wire grid array of a substrate provided in some embodiments of the present disclosure
  • FIG. 3 is a schematic structural view of a metal wire grid array of a substrate provided in some embodiments of the present disclosure
  • FIG. 4 is a schematic structural view showing formation of a photoresist in a method of manufacturing a substrate provided in some embodiments of the present disclosure
  • FIG. 5 is a schematic structural diagram of a display device provided in some embodiments of the present disclosure.
  • FIG. 6 shows a flow chart of a method of fabricating a substrate provided in some embodiments of the present disclosure
  • FIG. 7 shows a flow chart of a method of forming a metal wire grid array on a substrate substrate provided in some embodiments of the present disclosure
  • Figure 8 is a flow chart showing a method of controlling dry tempering during dry etching provided in some embodiments of the present disclosure.
  • the WGP structure of the display is generally: taking an array substrate as an example, a metal wire grid array 20 is formed on the base substrate 10 , and the metal wire grid array includes a plurality of metal patterns arranged in sequence, and a metal pattern.
  • the cross section has a rectangular shape.
  • a substrate which can realize a display effect of high transmittance and high contrast of a display product, and solves the problem that the display product has low transmittance and large power consumption in the related art.
  • a substrate provided in some embodiments of the present disclosure includes a substrate substrate 100 and a metal wire grid array 200 formed on the substrate substrate 100, the metal wire grid array 200 including The metal pattern 201 is sequentially arranged, and the width W1 of the metal pattern 201 away from the one end of the base substrate 100 is smaller than the width W2 of the metal pattern 201 near the end of the base substrate 100.
  • the width W1 of the metal pattern 201 away from the one end of the base substrate 100 is smaller than the end thereof close to the substrate substrate 100.
  • the width W2 has a better transmittance and a degree of polarization than the rectangular shape of the metal pattern 201, and can achieve a high transmittance and a high contrast display effect of the display product, and the related art display is provided.
  • the product has a problem of low transmittance and high power consumption.
  • the width of the metal pattern 201 is from an end away from the base substrate 100 to near the base substrate 100.
  • the width W2 of one end is gradually increased.
  • the width W2 of the metal pattern 201 near the end of the base substrate 100 is 30-100 nm, and the arrangement period Wp of the metal pattern is 60-200 nm. .
  • the substrate provided by some embodiments of the present disclosure may be an array substrate or a color filter substrate.
  • the array substrate provided in some embodiments of the present disclosure includes: a substrate substrate 100, a metal wire grid array 200 formed on the substrate substrate 100, and a formation An array layer 300 over the metal wire grid array, the array layer 300 including a common electrode, a pixel electrode, and the like.
  • the shape of the metal pattern 201 in a cross section perpendicular to the direction in which the self extends is a trapezoid, and the end of the metal pattern 201 away from the base substrate 100 forms the A trapezoidal upper bottom, an end of the metal pattern 201 adjacent to the base substrate 100 forms the trapezoidal lower bottom.
  • the trapezoid is an isosceles trapezoid.
  • the metal pattern 201 has a trapezoidal shape in cross section, and the metal pattern 201 of the grid of the metal pattern 201 has a rectangular shape and has a better transmittance.
  • a simulation test is performed to change the ratio of the width of one end of the metal pattern 201 close to the base substrate 100 and the end of the metal pattern 201 away from the base substrate 100, when the length of the upper base of the trapezoid is When half the length of the lower base of the trapezoid is described, the transmittance and degree of polarization of the WGP are better.
  • the shape of the cross section of the metal pattern 201 in a direction perpendicular to the direction of self extension is a triangle, and the end of the metal pattern 201 away from the base substrate 100 forms the An apex of the triangle, an end of the metal pattern 201 adjacent to the base substrate 100 forms a bottom edge of the triangle.
  • the triangle is an isosceles triangle.
  • the metal pattern 201 has a triangular shape in cross section, and the metal pattern 201 of the gate of the metal pattern 201 has a rectangular shape and has a better transmittance.
  • FIG. 5 is a schematic diagram of a display device provided in some embodiments of the present disclosure.
  • the display device is a display panel, wherein the display panel includes a color film substrate 400 and an array substrate, wherein the array substrate adopts some of the disclosure.
  • the substrate provided in the examples.
  • an embodiment of the present disclosure further provides a method for manufacturing a substrate, which is used to manufacture the substrate provided in the embodiment, and the method includes:
  • S601 forming a metal wire grid array including a plurality of metal patterns arranged in sequence on a base substrate, wherein a width of one end of the metal pattern away from the base substrate is smaller than an end of the metal pattern close to the base substrate The width.
  • a metal wire grid array including a plurality of metal patterns arranged in sequence is formed on a substrate, and specifically includes:
  • S702 coating a photoresist 400 on the metal layer 210 of the base substrate 100, and performing exposure and development on the photoresist 400 by using a mask to form a photoresist retention region corresponding to the metal pattern 201 and corresponding Photoresist removal areas in other areas;
  • S703 forming a metal wire grid array 200 including a plurality of metal patterns 201 arranged in sequence in a dry etching manner, wherein the etching gas composition is adjusted according to a preset adjustment manner during the dry etching process to control the dry etching speed, so as to form
  • the width W1 of the metal pattern 201 away from the one end of the base substrate 100 is smaller than the width W2 of the metal pattern 201 near the end of the base substrate 100.
  • the photoresist 400 may be embossed on the metal layer 210 by nanoimprinting to form a strip-shaped photoresist pattern arranged in sequence.
  • the etching gas composition is adjusted according to a preset adjustment manner during the dry etching process to control the dry etching speed, so that the formed metal pattern 201 is away from the substrate.
  • the width W1 of one end of the substrate 100 is smaller than the width W2 of the metal pattern 201 near the end of the base substrate 100, specifically:
  • the width W1 of the metal pattern away from the one end of the base substrate 100 is smaller than the metal pattern 201 of the width W2 of the metal pattern 201 near the end of the base substrate 100.
  • the metal wire grid array is formed on the substrate by dry etching.
  • the metal wire grid array may be formed by other methods, for example, by using nano imprinting. .

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  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
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Abstract

一种基板、显示装置及基板的制造方法，基板包括衬底基板（10）和形成于衬底基板（10）上的金属线栅阵列（20），金属线栅阵列（20）包括多个依次排布的金属图形（201），金属图形（201）远离衬底基板（10）的一端的宽度（W1）小于金属图形（201）靠近衬底基板（10）的一端的宽度（W2）。

Description

一种基板、显示装置及基板的制造方法
相关申请的交叉引用
本申请主张在2016年6月27日在中国提交的中国专利申请No.201610482047.5的优先权，其全部内容通过引用包含于此。
技术领域
本公开文本涉及显示技术领域，尤其涉及一种基板、显示装置及基板的制造方法。
背景技术
随着消费者对显示产品要求越来越高，比如高透过率、低功耗、轻薄化等，面板厂商也在努力朝这几个方向发展。目前，通过WGP(Wire-Grid-Polarizer，金属线栅偏振分光片)技术，就可以解决上述问题，因为WGP可以被设置到液晶盒内部，所以可以省去一张偏光片，减小面板的厚度，又因为WGP具有反射作用，在下基板可以充当APF(Advanced Polarizer Film，反射式偏光片)功能，所以可以提高面板透过率，这样可以减小背光源的亮度，实现低功耗。然而，相关技术中的显示器的WGP结构导致显示产品存在透过率低，功耗大的问题。
发明内容
本公开文本的目的在于提供一种基板、显示装置及基板的制造方法，能够实现显示产品的高透过率、高对比度的显示效果，解决相关技术中显示产品存在透过率低，功耗大的问题。
本公开文本所提供的技术方案如下：
一种基板，包括衬底基板和形成于所述衬底基板上的金属线栅阵列，所述金属线栅阵列包括多个金属图形，所述金属图形远离所述衬底基板的一端的宽度小于所述金属图形靠近所述衬底基板的一端的宽度。
进一步地，所述金属图形的宽度自远离所述衬底基板的一端至靠近所述 衬底基板的一端逐渐增大。
进一步地，所述金属图形在垂直于自身延伸方向上的横截面的形状为梯形，所述金属图形的远离所述衬底基板的一端形成所述梯形的上底，所述金属图形的靠近所述衬底基板的一端形成所述梯形的下底。
进一步地，所述梯形为等腰梯形。
进一步地，所述梯形的上底的长度为所述梯形的下底的长度的一半。
进一步地，所述金属图形在垂直于自身延伸方向上的横截面的形状为三角形，所述金属图形的远离所述衬底基板的一端形成所述三角形的顶点，所述金属图形的靠近所述衬底基板的一端形成所述三角形的底边。
进一步地，所述三角形为等腰三角形。
进一步地，所述金属图形靠近所述衬底基板的一端的宽度为30～100nm，所述金属图形的排列周期为60～200nm。
进一步地，所述基板为阵列基板或彩膜基板。
一种显示装置，包括如上所述的基板。
进一步地，所述显示装置中的基板是阵列基板。
一种基板的制造方法，所述的方法用于制造如上所述的基板，所述方法包括：
在衬底基板上形成包括多个金属图形的金属线栅阵列，所述金属图形远离所述衬底基板的一端的宽度小于所述金属图形靠近所述衬底基板的一端的宽度。
进一步地，在衬底基板上形成包括多个金属图形的金属线栅阵列，具体包括：
在衬底基板上形成金属层；
在所述衬底基板的金属层上涂覆光刻胶，利用掩膜板对所述光刻胶进行曝光后显影，形成对应金属图形的光刻胶保留区域和对应其他区域的光刻胶去除区域；
利用干刻方式形成包括多个金属图形的金属线栅阵列，其中，在干刻过程中按照预设调整方式调整刻蚀气体成分来控制干刻速度，以使得形成的金属图形远离所述衬底基板的一端的宽度小于所述金属图形靠近所述衬底基板 的一端的宽度。
进一步地，在干刻过程中按照预设调整方式调整刻蚀气体成分来控制干刻速度，以使得形成的金属图形远离所述衬底基板的一端的宽度小于所述金属图形靠近所述衬底基板的一端的宽度，具体包括：
在干刻开始时，增大所述刻蚀气体中的有效干刻气体成分，以对所述金属层进行快速干刻，然后按照预设调整方式减小所述刻蚀气体中的有效干刻气体成分，以对所述金属层进行慢速干刻，最终得到所述金属图形。
本公开文本所带来的技术效果如下：
上述方案，通过对金属线栅阵列中的金属图形的形状进行改进，可实现显示产品的高透过率、高对比度的显示效果，解决相关技术中显示产品存在透过率低、功耗大的问题。
附图说明
为了更清楚地说明本申请实施例的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请中记载的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。以下附图并未刻意按实际尺寸等比例缩放绘制，重点在于示出本申请的主旨。
图1表示显示基板上金属线栅阵列的结构示意图；
图2表示本公开文本一些实施例中提供的基板的金属线栅阵列的结构示意图；
图3表示本公开文本一些实施例中提供的基板的金属线栅阵列的结构示意图；
图4表示本公开文本一些实施例中提供的基板的制造方法中形成光刻胶的结构示意图；
图5表示本公开文本一些实施例中提供的显示装置的结构示意图；
图6表示本公开文本一些实施例中提供的基板的制造方法的流程图；
图7表示本公开文本一些实施例中提供的在衬底基板上形成金属线栅阵列的方法的流程图；
图8表示本公开文本一些实施例中提供的在干刻过程中控制干刻速度的方法的流程图。
具体实施方式
为使本公开文本一些实施例的目的、技术方案和优点更加清楚，下面将结合本公开文本一些实施例的附图，对本公开文本一些实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开文本的一部分实施例，而不是全部的实施例。基于所描述的本公开文本的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开文本保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开文本所属领域内具有一般技能的人士所理解的通常意义。本公开文本专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”或者“一”等类似词语也不表示数量限制，而是表示存在至少一个。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也相应地改变。
如图1所示，显示器的WGP结构一般是：以阵列基板为例，在衬底基板10上形成有金属线栅阵列20，金属线栅阵列包括多个依次排布的金属图形，金属图形的横截面呈矩形形状。
本公开文本一些实施例中提供了一种基板，能够实现显示产品的高透过率、高对比度的显示效果，解决相关技术中显示产品存在透过率低，功耗大的问题。
如图2和图3所示，本公开文本一些实施例中提供的基板包括衬底基板100和形成于所述衬底基板100上的金属线栅阵列200，所述金属线栅阵列200包括多个依次排布的金属图形201，所述金属图形201的远离所述衬底基板100的一端的宽度W1小于所述金属图形201的靠近所述衬底基板100的一端的宽度W2。
在上述方案中，通过对金属线栅阵列200中的金属图形201的形状进行改进，使得金属图形201的远离所述衬底基板100的一端的宽度W1小于其靠近所述衬底基板100的一端的宽度W2的宽度，与金属图形201横截面为矩形形状相比，具有更好的透过率和偏振度，可实现显示产品的高透过率、高对比度的显示效果，解决相关技术中显示产品存在透过率低、功耗大的问题。
在本公开文本所提供的实施例中，可选地，如图2和图3所示，所述金属图形201的宽度自远离所述衬底基板100的一端至靠近所述衬底基板100的一端的宽度W2逐渐增大。采用上述方案，可以使得WGP的透过率和偏振度进一步地提高。
在本公开文本所提供的实施例中，可选地，所述金属图形201的靠近所述衬底基板100的一端的宽度W2为30～100nm，所述金属图形的排列周期Wp为60～200nm。
需要说明的是，本公开文本一些实施例所提供的基板可以为阵列基板，也可以是彩膜基板。
以阵列基板为例，如图5所示，本公开文本一些实施例中提供的阵列基板包括：衬底基板100、形成于所述衬底基板100之上的金属线栅阵列200以及形成于所述金属线栅阵列之上的阵列层300，该阵列层300包括公共电极、像素电极等。
在一些实施例中，如图2所示，所述金属图形201在垂直于自身延伸方向上的横截面的形状为梯形，所述金属图形201的远离所述衬底基板100的一端形成所述梯形的上底，所述金属图形201的靠近所述衬底基板100的一端形成所述梯形的下底。可选地，所述梯形为等腰梯形。
在本实施例中，所述金属图形201的横截面为梯形形状，相较于金属图形201栅的金属图形201为矩形形状，具有更好的透过率。
并且，在本实施例中，改变金属图形201的靠近衬底基板100的一端和金属图形201的远离衬底基板100的一端的宽度比例进行模拟试验，当所述梯形的上底的长度为所述梯形的下底的长度的一半时，WGP的透过率和偏振度较佳。
在一些实施例中，如图3所示，所述金属图形201在垂直于自身延伸方向上的横截面的形状为三角形，所述金属图形201的远离所述衬底基板100的一端形成所述三角形的顶点，所述金属图形201的靠近所述衬底基板100的一端形成所述三角形的底边。可选地，所述三角形为等腰三角形。
在本实施例中，所述金属图形201的横截面为三角形形状，相较于金属图形201栅的金属图形201为矩形形状，具有更好的透过率。
本公开文本的实施例中还提供了一种显示装置，包括如上所述的基板。如图5所示为本公开文本一些实施例中提供的一种显示装置的示意图，该显示装置为显示面板，其中该显示面板包括彩膜基板400和阵列基板，其中阵列基板采用本公开文本一些实施例中提供的基板。
此外，如图6所示，本公开文本的实施例中还提供了一种基板的制造方法，所述的方法用于制造本实施例中所提供的基板，所述方法包括：
S601：在衬底基板上形成包括依次排布的多个金属图形的金属线栅阵列，所述金属图形远离所述衬底基板的一端的宽度小于所述金属图形靠近所述衬底基板的一端的宽度。
如图7所示，在衬底基板上形成包括依次排布的多个金属图形的金属线栅阵列，具体包括：
S701：在衬底基板100上形成金属层210；
S702：在所述衬底基板100的金属层210上涂覆光刻胶400，利用掩膜板对所述光刻胶400进行曝光后显影，形成对应金属图形201的光刻胶保留区域和对应其他区域的光刻胶去除区域；
S703：利用干刻方式形成包括依次排布的多个金属图形201的金属线栅阵列200，其中，在干刻过程中按照预设调整方式调整刻蚀气体成分来控制干刻速度，以使得形成的金属图形201的远离所述衬底基板100的一端的宽度W1小于所述金属图形201的靠近所述衬底基板100的一端的宽度W2。
其中，上述方法中，可以通过纳米压印的方式在金属层210上进行光刻胶400压印，而形成依次排列的条形光刻胶图案。
此外，如图8所示，在上述方案中，在干刻过程中按照预设调整方式调整刻蚀气体成分来控制干刻速度，以使得形成的金属图形201远离所述衬底 基板100的一端的宽度W1小于所述金属图形201靠近所述衬底基板100的一端的宽度W2，具体为：
S801：在干刻开始时，增大有效干刻气体成分，使金属层210得到有效快速干刻，然后按照预设调整方式减小有效干刻气体成分，进行慢速干刻，最终得到包括图2或图3所示的金属图形201，该金属图形远离所述衬底基板100的一端的宽度W1小于所述金属图形201靠近所述衬底基板100的一端的宽度W2的金属图形201。
需要说明的是，上述方案中，通过干刻方式在衬底基板上形成金属线栅阵列，在实际应用中，也可以采用其他方式形成所述金属线栅阵列，例如：采用纳米压印等方式。
以上所述仅是本公开文本的可选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开文本技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本公开文本的保护范围。

Claims (14)

  1. 一种基板，包括衬底基板和形成于所述衬底基板上的金属线栅阵列，所述金属线栅阵列包括多个金属图形，所述金属图形远离所述衬底基板的一端的宽度小于所述金属图形靠近所述衬底基板的一端的宽度。
  2. 根据权利要求1所述的基板，其中，
    所述金属图形的宽度自远离所述衬底基板的一端至靠近所述衬底基板的一端逐渐增大。
  3. 根据权利要求1所述的基板，其中，
    所述金属图形在垂直于自身延伸方向上的横截面的形状为梯形，所述金属图形的远离所述衬底基板的一端形成所述梯形的上底，所述金属图形的靠近所述衬底基板的一端形成所述梯形的下底。
  4. 根据权利要求3所述的基板，其中，
    所述梯形为等腰梯形。
  5. 根据权利要求3所述的基板，其中，
    所述梯形的上底的长度为所述梯形的下底的长度的一半。
  6. 根据权利要求1所述的基板，其中，
    所述金属图形在垂直于自身延伸方向上的横截面的形状为三角形，所述金属图形的远离所述衬底基板的一端形成所述三角形的顶点，所述金属图形的靠近所述衬底基板的一端形成所述三角形的底边。
  7. 根据权利要求6所述的基板，其中，
    所述三角形为等腰三角形。
  8. 根据权利要求1所述的基板，其中，
    所述金属图形靠近所述衬底基板的一端的宽度为30～100nm，所述金属图形的排列周期为60～200nm。
  9. 根据权利要求1至8任一项所述的基板，其中，所述基板为阵列基板或彩膜基板。
  10. 一种显示装置，包括如权利要求1至8任一项所述的基板。
  11. 根据权利要求10所述的显示装置，其中，所述基板为阵列基板。
  12. 一种用于制造如权利要求1至9任一项所述的基板的方法，包括：
    在衬底基板上形成包括多个金属图形的金属线栅阵列，所述金属图形远离所述衬底基板的一端的宽度小于所述金属图形靠近所述衬底基板的一端的宽度。
  13. 根据权利要求12所述的方法，其中，在衬底基板上形成包括多个金属图形的金属线栅阵列，具体包括：
    在衬底基板上形成金属层；
    在所述衬底基板的金属层上涂覆光刻胶，利用掩膜板对所述光刻胶进行曝光后显影，形成对应金属图形的光刻胶保留区域和对应其他区域的光刻胶去除区域；
    利用干刻方式形成包括多个金属图形的金属线栅阵列，其中，在干刻过程中按照预设调整方式调整刻蚀气体成分来控制干刻速度，以使得形成的金属图形远离所述衬底基板的一端的宽度小于所述金属图形靠近所述衬底基板的一端的宽度。
  14. 根据权利要求13所述的方法，其中，在干刻过程中按照预设调整方式调整刻蚀气体成分来控制干刻速度，以使得形成的金属图形远离所述衬底基板的一端的宽度小于所述金属图形靠近所述衬底基板的一端的宽度，具体包括：
    在干刻开始时，增大所述刻蚀气体中的有效干刻气体成分，以对所述金属层进行快速干刻，然后按照预设调整方式减小所述刻蚀气体中的有效干刻气体成分，以对所述金属层进行慢速干刻，最终得到所述金属图形。
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