WO2017222009A1 - Substrate mounting method, film formation method, and method for manufacturing electronic device - Google Patents

Substrate mounting method, film formation method, and method for manufacturing electronic device Download PDF

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Publication number
WO2017222009A1
WO2017222009A1 PCT/JP2017/023004 JP2017023004W WO2017222009A1 WO 2017222009 A1 WO2017222009 A1 WO 2017222009A1 JP 2017023004 W JP2017023004 W JP 2017023004W WO 2017222009 A1 WO2017222009 A1 WO 2017222009A1
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WO
WIPO (PCT)
Prior art keywords
substrate
mounting
mounting body
mask
clamping
Prior art date
Application number
PCT/JP2017/023004
Other languages
French (fr)
Japanese (ja)
Inventor
石井　博
鈴木　健太郎
光太郎 鳥潟
Original Assignee
キヤノントッキ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by キヤノントッキ株式会社 filed Critical キヤノントッキ株式会社
Priority to CN201780002058.1A priority Critical patent/CN107851603B/en
Priority to KR1020217004745A priority patent/KR20210021140A/en
Priority to JP2018515326A priority patent/JP6351918B2/en
Priority to KR1020177036310A priority patent/KR102219478B1/en
Publication of WO2017222009A1 publication Critical patent/WO2017222009A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

Definitions

  • the present invention relates to a substrate placement method, a film formation method, an electronic device manufacturing method, a substrate placement apparatus, and a film formation apparatus.
  • the substrate is becoming larger and thinner, and the influence of bending due to the weight of the substrate is increasing.
  • the substrate can be held only at the peripheral portion of the substrate because the film formation region is provided in the central portion of the substrate.
  • the substrate when the substrate is placed on the mask with the peripheral edge of the substrate (for example, a pair of opposing sides) sandwiched between the substrate supports, the substrate sandwiched by the peripheral edge is bent by the weight of the substrate.
  • the mask and the mask come into contact with each other, free movement is hindered and the substrate is distorted.
  • This distortion causes a gap between the mask and the substrate, and the adhesion between the mask and the substrate is reduced, which causes film blurring and the like.
  • Patent Document 1 a technique as disclosed in Patent Document 1 has been proposed to satisfactorily bring the substrate and the mask into close contact with each other even when the substrate or the like is enlarged, but further improvement is desired.
  • the substrate vibrates due to vibration generated by movement of an evaporation source or a transport mechanism driven in the film formation apparatus.
  • the mask may rub and damage the processing surface of the substrate.
  • the present invention has been made in view of the above-described situation, and provides a technique capable of improving the adhesion between a large and thin substrate and a mask by a simple method.
  • a first aspect of the present invention is a substrate placement method for placing a substrate on a placement body, wherein the substrate is placed on the placement body and a peripheral portion of the substrate is clamped by a holding mechanism.
  • the substrate mounting method is characterized in that the substrate is sandwiched.
  • a second aspect of the present invention is a film forming method for forming a predetermined pattern on a substrate, wherein the substrate is placed on the mounting body by the substrate mounting method according to the first aspect. And a step of forming a film on the substrate.
  • a third aspect of the present invention is a method of manufacturing an electronic device having an organic film formed on a substrate, wherein the organic film is formed by the film forming method according to the third aspect. It is a manufacturing method.
  • a substrate mounting apparatus for mounting a substrate on a mounting body, the substrate holding means having a holding mechanism for holding a peripheral edge of the substrate, and the substrate holding means.
  • Control means for controlling wherein the control means is in a state in which the holding mechanism is placed in a state where the board is placed on the mounting body, and the holding mechanism is in a released state where the holding mechanism is not holding the board.
  • the substrate mounting apparatus is characterized in that the substrate holding means is controlled to shift to a sandwiching state in which a substrate is sandwiched.
  • a film forming apparatus for forming a predetermined pattern on a substrate, the substrate mounting apparatus according to the fourth aspect for mounting the substrate on a mounting body,
  • a film forming apparatus comprising: means for forming a film on a substrate.
  • the adhesion between the large and thin substrate and the mask can be improved by a simple method as described above.
  • FIG. It is explanatory drawing of the board
  • FIG. It is explanatory drawing of the board
  • FIG. It is explanatory drawing of the board
  • FIG. It is explanatory drawing of the board
  • FIG. It is explanatory drawing of the board
  • FIG. It is explanatory drawing of the board
  • FIG. It is explanatory drawing of the board
  • FIG. It is explanatory drawing of the board
  • FIG. It is explanatory drawing of the board
  • FIG. It is explanatory drawing of the board
  • FIG. It is explanatory drawing of the board
  • FIG. It is an upper view which shows typically a part of manufacturing apparatus of an electronic device. It is sectional drawing which shows the structure of the film-forming apparatus typically. It is a perspective view of a substrate holding unit.
  • (A) is a perspective view of an organic EL display device
  • (b) is a cross-sectional structure diagram of one pixel.
  • 12 is a modification of the second alignment process of the third embodiment. 12 is a modification of the second alignment process of the third embodiment. 12 is a modification of the second alignment process of the third embodiment. 12 is a modification of the second alignment process of the third embodiment.
  • the present invention relates to a film forming apparatus for forming a thin film on a substrate and a control method thereof, and more particularly, to a technique for highly accurate conveyance and position adjustment of a substrate.
  • the present invention can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum deposition on the surface of a parallel plate substrate.
  • Arbitrary materials such as glass, resin, and metal can be selected as the material of the substrate, and any material such as organic material and inorganic material (metal, metal oxide, etc.) can be selected as the vapor deposition material.
  • the technology of the present invention can be applied to manufacturing apparatuses such as organic electronic devices (for example, organic EL display devices, thin film solar cells), optical members, and the like.
  • the organic EL display device manufacturing apparatus is required to further improve the substrate transport accuracy and the substrate / mask alignment accuracy by increasing the size of the substrate or increasing the definition of the display panel. This is one example.
  • FIG. 23 is a top view schematically showing a part of the configuration of the electronic device manufacturing apparatus.
  • the manufacturing apparatus of FIG. 23 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone.
  • a display panel for a smartphone for example, after forming an organic EL film on a substrate having a size of about 1800 mm ⁇ about 1500 mm and a thickness of about 0.5 mm, the substrate is diced to produce a plurality of small size panels.
  • An electronic device manufacturing apparatus generally has a plurality of film forming chambers 111 and 112 and a transfer chamber 110 as shown in FIG.
  • a transfer robot 119 for holding and transferring the substrate 10 is provided in the transfer chamber 110.
  • the transfer robot 119 is, for example, a robot having a structure in which a robot hand that holds a substrate is attached to an articulated arm, and carries the substrate 10 into and out of each film forming chamber.
  • Each film forming chamber 111, 112 is provided with a film forming apparatus (also referred to as a vapor deposition apparatus).
  • a series of film formation processes such as delivery of the substrate 10 to the transfer robot 119, adjustment of the relative position between the substrate 10 and the mask (alignment), fixation of the substrate 10 on the mask, film formation (evaporation) are performed by the film formation apparatus. Done automatically.
  • the film forming apparatus in each film forming chamber has almost the same basic structure (particularly, the structure related to substrate transport and alignment), although there are differences in details such as the difference in vapor deposition source and mask. .
  • a common configuration of the film forming apparatuses in the respective film forming chambers will be described.
  • FIG. 24 is a cross-sectional view schematically showing the configuration of the film forming apparatus.
  • an XYZ orthogonal coordinate system in which the vertical direction is the Z direction is used.
  • the substrate is fixed so as to be parallel to the horizontal plane (XY plane), and the short direction (direction parallel to the short side) of the substrate at this time is the X direction, and the long direction (direction parallel to the long side).
  • the rotation angle around the Z axis is represented by ⁇ .
  • the film forming apparatus has a vacuum chamber 200.
  • the inside of the vacuum chamber 200 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas.
  • a substrate holding unit 210, a mask 220, a mask base 221, a cooling plate 230, and a vapor deposition source 240 are generally provided.
  • the substrate holding unit 210 is means for holding and transporting the substrate 10 received from the transport robot 119, and is also called a substrate holder.
  • the mask 220 is a metal mask having an opening pattern corresponding to the thin film pattern formed on the substrate 10, and is fixed on the frame-shaped mask base 221.
  • the substrate 10 is placed on the mask 220 during film formation. Therefore, the mask 220 also serves as a mounting body on which the substrate 10 is mounted.
  • the cooling plate 230 is pressed against the substrate 10 (the surface opposite to the mask 220) to bring the substrate 10 into close contact with the mask 220, and suppresses an increase in the temperature of the substrate 10 during film formation. It is a plate member that plays a role of suppressing deterioration and deterioration of the steel.
  • the cooling plate 230 may also serve as a magnet plate.
  • the magnet plate is a member that enhances the adhesion between the substrate 10 and the mask 220 during film formation by attracting the mask 220 with a magnetic force.
  • the evaporation source 240 includes an evaporation material, a heater, a shutter, an evaporation source drive mechanism, an evaporation rate monitor, and the like (all not shown).
  • a substrate Z actuator 250, a clamp Z actuator 251, a cooling plate Z actuator 252, an X actuator (not shown), a Y actuator (not shown), and a ⁇ actuator (not shown) are provided above (outside) the vacuum chamber 200.
  • These actuators include, for example, a motor and a ball screw, a motor and a linear guide, and the like.
  • the substrate Z actuator 250 is a driving means for moving the entire substrate holding unit 210 up and down (moving in the Z direction).
  • the clamp Z actuator 251 is a driving unit for opening and closing a clamping mechanism (described later) of the substrate holding unit 210.
  • the cooling plate Z actuator 252 is driving means for moving the cooling plate 230 up and down.
  • the X actuator, Y actuator, and ⁇ actuator are drive means for alignment of the substrate 10.
  • the XY ⁇ actuator rotates the entire substrate holding unit 210 and the cooling plate 230 in the X direction, the Y direction, and ⁇ rotation.
  • the X, Y, and ⁇ of the substrate 10 are adjusted with the mask 220 fixed.
  • the position of the mask 220 is adjusted, or the positions of both the substrate 10 and the mask 220 are adjusted. By adjusting, the substrate 10 and the mask 220 may be aligned.
  • Cameras 260 and 261 for measuring the positions of the substrate 10 and the mask 220 are provided above (outside) the vacuum chamber 200 in order to align the substrate 10 and the mask 220.
  • the cameras 260 and 261 photograph the substrate 10 and the mask 220 through a window provided in the vacuum chamber 200.
  • each XY position and relative displacement in the XY plane can be measured.
  • a first alignment that roughly aligns also referred to as “rough alignment”
  • a second alignment that aligns with high accuracy also referred to as “fine alignment”. It is preferable to perform the two-stage alignment.
  • first alignment camera 260 for each of the substrate 10 and the mask 220, alignment marks attached to two locations on a pair of opposing sides are measured by two first alignment cameras 260, and the four corners of the substrate 10 and the mask 220 are measured.
  • the alignment marks attached to are measured with four second alignment cameras 261.
  • the film forming apparatus has a control unit 270.
  • the control unit 270 controls the substrate Z actuator 250, the clamp Z actuator 251, the cooling plate Z actuator 252, the XY ⁇ actuator, and the cameras 260 and 261, as well as transport and alignment of the substrate 10, deposition source control, and film formation control. It has functions such as.
  • the control unit 270 can be configured by a computer having a processor, memory, storage, I / O, and the like, for example. In this case, the function of the control unit 270 is realized by the processor executing a program stored in the memory or storage.
  • a general-purpose personal computer may be used, or a built-in computer or a PLC (programmable logic controller) may be used.
  • control unit 270 may be configured by a circuit such as an ASIC or FPGA. Note that a control unit 270 may be provided for each film forming apparatus, or one control unit 270 may control a plurality of film forming apparatuses.
  • substrate holding unit 210 substrate holding unit 210, substrate Z actuator 250, clamp Z actuator 251, XY ⁇ actuator, cameras 260, 261, control unit 270, etc.
  • substrate clamping device substrate transfer device
  • FIG. 25 is a perspective view of the substrate holding unit 210.
  • the substrate holding unit 210 is means for holding and transporting the substrate 10 by holding the periphery of the substrate 10 by a holding mechanism.
  • the substrate holding unit 210 includes a plurality of support frames 301 provided with a plurality of support tools 300 that support each of the four sides of the substrate 10 from below, and a plurality of the substrate 10 sandwiched between the support tools 300.
  • a clamp member 303 provided with the pressing tool 302.
  • the pair of support tools 300 and the pressing tool 302 constitute one clamping mechanism.
  • three support tools 300 are arranged along the short side of the substrate 10
  • six clamping mechanisms (a pair of the support tool 300 and the pressing tool 302) are arranged along the long side. It is configured to sandwich two sides.
  • the configuration of the clamping mechanism is not limited to the example of FIG. 25, and the number and arrangement of the clamping mechanisms may be changed as appropriate in accordance with the size and shape of the substrate to be processed or the film formation conditions.
  • the support tool 300 is also called a “receiving claw” or “finger”, and the pressing tool 302 is also called a “clamp”.
  • Delivery of the substrate 10 from the transfer robot 119 to the substrate holding unit 210 is performed as follows, for example.
  • the clamp member 303 is raised by the clamp Z actuator 251, and the pressing tool 302 is separated from the support tool 300, so that the clamping mechanism is released.
  • the clamp member 303 is lowered by the clamp Z actuator 251, and the pressing tool 302 is pressed against the support tool 300 with a predetermined pressing force.
  • the substrate 10 is sandwiched between the pressing tool 302 and the support tool 300.
  • the substrate 10 can be moved up and down (moved in the Z direction). Since the clamp Z actuator 251 is raised / lowered together with the substrate holding unit 210, the state of the clamping mechanism does not change even when the substrate holding unit 210 is raised / lowered.
  • reference numeral 101 denotes a second alignment alignment mark attached to the four corners of the substrate 10
  • reference numeral 102 denotes a first alignment alignment mark attached to the center of the short side of the substrate 10.
  • FIGS. 1 to 8 schematically show a portion of the mask 1 which is a mounting body of the substrate holding unit 6 and the substrate 2 of the film forming apparatus for convenience of explanation.
  • Embodiment 1 is a method of placing a substrate 2 on a mask 1 that is a placement body.
  • the peripheral portion of the substrate 2 is placed on the substrate holding unit 6.
  • the substrate mounting method is characterized in that the substrate is clamped by a clamping mechanism.
  • the controller holds the substrate holding unit 6 so that the holding mechanism shifts from the released state (non-holding state) to the holding state. How to control. By sandwiching the peripheral edge of the substrate 2 with the substrate 2 placed on the mask 1, the bending (distortion) of the substrate 2 can be corrected.
  • the substrate 2 since the substrate 2 is bent by its own weight, when the substrate 2 and the mask 1 are relatively brought closer, the central portion of the substrate comes into contact with the mask 1 in advance. At this time, since the peripheral portion of the substrate 2 is not sandwiched, the deformation of the substrate 2 caused by the contact with the mask 1 is not hindered by the sandwiching mechanism, and the substrate 2 extends outward. As a result, the substrate 2 can be satisfactorily placed along the mask 1, and the substrate 2 can be held in a state of being in close contact with the mask 1 without distortion.
  • the state in which the substrate 2 is placed on the mask (mounting body) 1 means a state in which at least a part of the substrate 2 is in contact with the mask 1. That is, “the state in which the substrate 2 is placed on the mask 1” means “when the substrate 2 starts to contact the mask 1 (FIG. 6)” when the substrate 2 and the mask 1 are relatively close to each other. Approaching "when the contact area between the substrate 2 and the mask 1 is increased from the contact start time (FIG. 7)", and approaching further "when the entire substrate 2 is placed on the mask 1 (FIG. 8)" The state at any point in time is included. From the point of adhesion between the substrate 2 and the mask 1 after the substrate is placed, the timing of sandwiching the peripheral portion of the substrate 2 is preferably the state of FIG. 7 rather than the state of FIG. 6, and further the state of FIG. It is more preferable that
  • a film is formed using a film forming mechanism by disposing a substrate 2 and a film forming mask 1 having an opening for defining a film forming pattern in a vacuum chamber 5.
  • a film forming mechanism by disposing a substrate 2 and a film forming mask 1 having an opening for defining a film forming pattern in a vacuum chamber 5.
  • the vacuum chamber 5 is provided with a mask 1 serving as a mounting body supported by a mask table 4, and a moving mechanism 3 that changes the relative distance between the mask 1 and the substrate 2 is provided. Yes.
  • the mounting body may be other than the mask 1 such as a mounting table on which the substrate 2 is temporarily mounted in order to eliminate bending (distortion) of the substrate 2.
  • the substrate 2 sandwiched in a state in which the bending or the like has already been corrected before being placed on the mask 1 on the mask 1, so that the substrate 2 and the mask 1 are in good contact with each other. Is possible.
  • the moving mechanism 3 has a fixed portion attached to the wall surface of the vacuum chamber 5 and a substrate holding unit 6 provided at the tip of the moving portion that is provided in the fixed portion so as to be freely advanced and retracted. Therefore, the substrate 2 supported by the substrate holding unit 6 moves toward and away from the mask 1 by moving the moving portion forward and backward.
  • the substrate holding unit 6 has a support 7 in contact with the lower surface of the peripheral edge of the substrate 2, and a pressure provided on the upper surface side of the substrate 2 so as to sandwich the support 7 and the substrate 2.
  • a tool 8 is provided.
  • the substrate holding unit 6 has a shape in which sleeve portions are suspended from the left and right sides of the body portion, and a support 7 is provided so as to protrude inward from the tip of the sleeve portion. Further, a base 9 is provided on which a pressing tool 8 is movably provided so as to face the support tool 7.
  • the pressing tool 8 is configured to sandwich the substrate 2 by protruding from the base 9 and pressing the substrate 2 against the support 7.
  • the holding tool 7 and the pressing tool 8 can be appropriately switched between a holding state in which the pressing tool 8 is pressed against the substrate 2 and a released state in which the pressing tool 8 is retracted from the substrate 2 and the substrate 2 is not clamped.
  • the released state refers to a state where the substrate 2 is not clamped by any clamping mechanism.
  • a plurality of support tools 7 and pressing tools 8 are provided so as to clamp a plurality of sides of the substrate 2.
  • the support tool 7 and the pressing tool 8 are provided so as to sandwich a pair of opposite sides of the substrate 2.
  • the pair of support tools 7 and the pressing tool 8 are respectively configured so as to come into contact with substantially one entire side portion in the longitudinal direction.
  • the substrate 2 is brought into contact with the mask 1 using the moving mechanism 3 and the sandwiching mechanism having the above-described configuration, and the peripheral portion of the substrate 2 is sandwiched by the sandwiching mechanism while being in contact with the mask 1. That is, in this embodiment, the substrate 2 is brought into contact with the mask 1 in the released state, and then sandwiched.
  • the holding of the substrate 2 is performed by bringing the relative distance between the substrate 2 and the mask 1 closer by the moving mechanism 3 that changes the relative distance between the substrate 2 and the mask 1. 2 is performed when the contact area between the mask 2 and the mask 1 increases from the start of contact.
  • FIGS. 3 to 8 for example, when the substrate 2 transported from the substrate transport robot outside the vacuum chamber 5 is carried into the vacuum chamber 5 and received by the substrate holding unit 6 (FIG. 3). 3), a descent start time (FIG. 4), a descent time point (FIG. 5), a time point when the substrate 2 comes into contact with the mask 1 (FIG. 6), and the substrate 2 is a mask. After the contact with 1, the holding mechanism is released until the contact area is further lowered while increasing the contact area (FIG. 7), and the substrate 2 is clamped at the end of placement when the substrate 2 overlaps the mask 1 (FIG. 8).
  • the substrate 2 descends while increasing the contact area with the mask 1, the substrate 2 comes into contact with the mask 1 in the released state (non-clamping state), so that the deformation of the substrate 2 is hindered by the clamping mechanism.
  • the substrate 2 extends outward.
  • the substrate 2 can be satisfactorily placed along the mask 1, and the substrate 2 can be held in a state of being in close contact with the mask 1 without distortion.
  • the substrate is rubbed in either the holding or released state at the time of FIGS. 3 to 5 and FIG. It has been confirmed that the prevention effect is exhibited.
  • FIGS. 9 to 15 schematically show a portion of the mask 1 which is a mounting body of the substrate holding unit 6 and the substrate 2 of the film forming apparatus for convenience of explanation.
  • Example 2 is a method of placing the substrate 2 on the mask 1 which is a placing body, and sandwiching the peripheral portion of the substrate 2 by the sandwiching mechanism in a state where the substrate 2 is placed on the mask 1.
  • the second embodiment after the first clamping step of clamping the peripheral portion of the substrate 2 by the clamping mechanism, the releasing step of releasing the clamping of the substrate 2 in the first clamping step, and after the releasing step, And a second clamping step of clamping the peripheral edge of the substrate 2 by a clamping mechanism in a state where the substrate 2 is placed on the mask 1 as a mounting body.
  • the substrate 2 is transported to the vicinity of the mask 1 with the peripheral edge of the substrate 2 held by the holding mechanism of the substrate holding unit 6, and the holding mechanism is temporarily released when at least a part of the substrate 2 contacts the mask 1. Then, the peripheral portion of the substrate 2 is re-clamped by the clamping mechanism.
  • the clamping mechanism Since the clamping mechanism is once released, the deformation of the substrate 2 caused by the contact with the mask 1 is not hindered by the clamping mechanism, and the substrate 2 extends outward. As a result, the substrate 2 can be satisfactorily placed along the mask 1, and the substrate 2 can be held in a state of being in close contact with the mask 1 without distortion.
  • the state in which the substrate 2 is placed on the mask (mounting body) 1 means a state in which at least a part of the substrate 2 is in contact with the mask 1. That is, “the state where the substrate 2 is placed on the mask 1” means “when the substrate 2 starts to contact the mask 1 (FIG. 13)” when the substrate 2 and the mask 1 are relatively close to each other. Approaching “when the contact area of the substrate 2 and the mask 1 is increased from the contact start time (FIG. 14)”, approaching further “when the entire substrate 2 is placed on the mask 1 (FIG. 15)”. The state at any point in time is included. From the point of adhesion between the substrate 2 and the mask 1 after the substrate is placed, the timing of re-clamping the peripheral portion of the substrate 2 is preferably the state of FIG. 14 rather than the state of FIG. More preferably, it is in a state.
  • a film is formed using a film forming mechanism by disposing a substrate 2 and a film forming mask 1 having an opening for defining a film forming pattern in a vacuum chamber 5.
  • a film forming mechanism by disposing a substrate 2 and a film forming mask 1 having an opening for defining a film forming pattern in a vacuum chamber 5.
  • the vacuum chamber 5 is provided with a mask 1 serving as a mounting body supported by a mask table 4, and a moving mechanism 3 that changes the relative distance between the mask 1 and the substrate 2 is provided. Yes.
  • the mounting body may be other than the mask 1 such as a mounting table on which the substrate 2 is temporarily mounted in order to eliminate bending (distortion) of the substrate 2.
  • the substrate 2 sandwiched in a state in which the bending or the like has already been corrected before being placed on the mask 1 on the mask 1, so that the substrate 2 and the mask 1 are in good contact with each other. Is possible.
  • the moving mechanism 3 has a fixed portion attached to the wall surface of the vacuum chamber 5 and a substrate holding unit 6 provided at the tip of the moving portion that is provided in the fixed portion so as to be freely advanced and retracted. Therefore, the substrate 2 supported by the substrate holding unit 6 moves toward and away from the mask 1 by moving the moving portion forward and backward.
  • the substrate holding unit 6 is provided with a support 7 that contacts the lower surface of the peripheral edge of the substrate 2 and a pressing tool 8 that is provided on the upper surface side of the substrate 2 so as to sandwich the support 7 and the substrate 2. .
  • the substrate holding unit 6 has a shape in which sleeve portions are suspended from the left and right sides of the body portion, and a support 7 is provided so as to protrude inward from the tip of the sleeve portion. Further, a base 9 is provided on which a pressing tool 8 is movably provided so as to face the support tool 7.
  • the pressing tool 8 is configured to sandwich the substrate 2 by protruding from the base 9 and pressing the substrate 2 against the support 7.
  • the holding tool 7 and the pressing tool 8 can be appropriately switched between a holding state in which the pressing tool 8 is pressed against the substrate 2 and a released state in which the pressing tool 8 is retracted from the substrate 2 and the substrate 2 is not clamped.
  • the released state refers to a state where the substrate 2 is not clamped by any clamping mechanism.
  • a plurality of support tools 7 and pressing tools 8 are provided so as to clamp a plurality of sides of the substrate 2.
  • the support tool 7 and the pressing tool 8 are provided so as to sandwich a pair of opposite sides of the substrate 2.
  • the pair of support tools 7 and the pressing tool 8 are respectively configured so as to come into contact with substantially one entire side portion in the longitudinal direction.
  • the relative distance between the substrate 2 and the mask 1 is reduced while the peripheral portion of the substrate 2 is clamped by the clamping mechanism, and the clamping mechanism is released when at least a part of the substrate 2 comes into contact with the mask 1. To do. Then, the relative distance between the substrate 2 and the mask 1 is further reduced and the entire surface of the substrate 2 is placed on the mask 1, and then the peripheral portion of the substrate 2 is re-clamped by the clamping mechanism.
  • FIGS. 10 to 15 For example, when the substrate 2 transferred from the substrate transfer robot outside the vacuum chamber 5 is carried into the vacuum chamber 5 and received by the substrate holding unit 6 (see FIG. 10). 10) It is clamped until the descent start time (FIG. 11) for placing the substrate 2 on the mask 1 (FIG. 11), the descent time point (FIG. 12), and the time point when the substrate 2 contacts the mask 1 (FIG. 13). When the substrate 2 comes into contact with the mask 1 and is further lowered, the substrate 2 is released (FIG. 14), and re-clamped when the substrate 2 overlaps the mask 1 (FIG. 15).
  • the substrate 2 descends while increasing the contact area with the mask 1, the substrate 2 comes into contact with the mask 1 in the released state (non-clamping state), so that the deformation of the substrate 2 is hindered by the clamping mechanism.
  • the substrate 2 extends outward.
  • the substrate 2 can be satisfactorily placed along the mask 1, and the substrate 2 can be held in a state of being in close contact with the mask 1 without distortion. Therefore, while stably transporting the substrate 2, deformation at the time of contact with the mask 1 can be prevented and film blurring can be satisfactorily prevented.
  • the step of releasing is performed at the time of FIG. 14 and re-clamping at the time of FIG. 15 is included, it is clamped at at least one time even if not clamped at all the times of FIGS. In this way, it has been confirmed that the film blurring prevention effect is exhibited.
  • FIGS. 16 to 19 show a series of processes until the substrate holding unit 210 receives the substrate 10 from the transfer robot 119 and places it on the mask (mounting body) 220.
  • FIG. 16A shows a state immediately after the substrate 10 is transferred from the transfer robot 119 to the substrate holding unit 210.
  • the center of the substrate 10 is bent downward by its own weight.
  • the clamp member 303 is lowered and the pressing tool 302 is pressed against the support tool 300 with a predetermined pressing force. Accordingly, the left and right sides of the substrate 10 are clamped by the clamping mechanism including the pressing tool 302 and the support tool 300.
  • FIG. 16C is a diagram showing the first alignment.
  • the first alignment is a first position adjustment process for roughly adjusting the relative position between the substrate 10 and the mask 220 in the XY plane (direction parallel to the surface of the mask 220), and is also referred to as “rough alignment”.
  • the In the first alignment the substrate alignment mark 102 provided on the substrate 10 and the mask alignment mark (not shown) provided on the mask 220 are recognized by the camera 260, and each XY position and relative displacement in the XY plane are measured. And align.
  • the camera 260 used for the first alignment is a low-resolution but wide-field camera so that rough alignment is possible.
  • the position of the substrate 10 (substrate holding unit 210) may be adjusted, the position of the mask 220 may be adjusted, or the positions of both the substrate 10 and the mask 220 may be adjusted. Also good.
  • the substrate 10 is lowered as shown in FIG. Then, as shown in FIG. 17B, before the substrate 10 contacts the mask 220, the pressing tool 302 is raised to release the clamping mechanism.
  • FIG. 17C after the substrate holding unit 210 is lowered to the position where the second alignment is performed in the released state (non-clamping state), the substrate is held as shown in FIG. The peripheral portion of the substrate 10 is re-clamped by the mechanism.
  • the position where the second alignment is performed is a position where the substrate 10 is temporarily placed on the mask 220 in order to measure the relative displacement between the substrate 10 and the mask 220, for example, the support surface of the support 300.
  • the (upper surface) is a position slightly higher than the mounting surface of the mask 220. At this time, the central portion of the substrate 10 is in contact with the mask 220, and the left and right side portions of the peripheral portion of the substrate 10 that are supported by the clamping mechanism are slightly separated (floated) from the mounting surface of the mask 220. Become.
  • the substrate 10 is moved closer to the mask 220 while the substrate holding unit 210 is released.
  • the peripheral portion of the substrate 10 is sandwiched. Therefore, when the substrate 10 that has been bent by its own weight returns to a flat shape following the mask 220, the peripheral edge of the substrate 10 escapes to the outside, so that no extra stress is applied to the substrate 10. Therefore, the adhesion between the substrate 10 and the mask 220 can be increased, and the position of the substrate 10 can be prevented from being displaced or the surface of the substrate 10 can be prevented from rubbing against the mask 220 when the substrate 10 is placed on the mask 220.
  • the second alignment is an alignment process that performs highly accurate alignment, and is also referred to as “fine alignment”.
  • the camera alignment of the substrate alignment mark 101 provided on the substrate 10 and the mask alignment mark (not shown) provided on the mask 220 is recognized by the camera 261, and the respective XY positions and XY planes are recognized. Measure the relative displacement within.
  • the camera 261 is a narrow-field but high-resolution camera so that high-precision positioning can be performed.
  • alignment processing is performed.
  • a case where the measured deviation exceeds the threshold will be described.
  • the substrate Z actuator 250 is driven to raise the substrate 10 away from the mask 220 as shown in FIG.
  • the XY ⁇ actuator is driven based on the deviation measured by the camera 261 to perform alignment.
  • the position of the substrate 10 substrate holding unit 210) may be adjusted, the position of the mask 220 may be adjusted, or the positions of both the substrate 10 and the mask 220 may be adjusted. Also good.
  • the substrate 10 is lowered again to the position where the second alignment is performed, and the substrate 10 is placed on the mask 220 again.
  • the camera 261 photographs the alignment marks on the substrate 10 and the mask 220, and measures the deviation. When the measured deviation exceeds the threshold value, the above-described alignment process is repeated.
  • the substrate holding unit 210 is lowered while the substrate 10 is held, and the support surface of the substrate holding unit 210 and the mask The height of 220 is matched. As a result, the entire substrate 10 is placed on the mask 220. Thereafter, the cooling plate Z actuator 252 is driven, and the cooling plate 230 is lowered to adhere to the substrate 10.
  • the placement process of the substrate 10 on the mask 220 is completed, and the film formation process (evaporation process) by the film formation apparatus is performed.
  • FIGS. 18A to 18D Modification of second alignment process
  • the substrate 10 is masked by the mask 220.
  • the holding mechanism may be released when it is placed on top, or the holding force of the holding mechanism may be weakened (the holding may be loosened).
  • FIGS. Specific operation examples are shown in FIGS.
  • the clamping mechanism that supports the right side portion in the drawing is referred to as the right side clamping mechanism
  • the clamping mechanism that supports the left side portion is referred to as the left side clamping mechanism.
  • FIG. 27 shows an operation example in which the substrate 10 is placed on the mask 220 in a state where the right and left clamping mechanisms are released.
  • the operations from FIG. 27 (a) to FIG. 27 (c) are the same as FIG. 18 (a) to FIG. 18 (c).
  • the substrate 10 is lowered to the position where the second alignment is performed in the released state, and the substrate 10 is placed on the mask 220 again.
  • the camera 261 photographs the alignment marks on the substrate 10 and the mask 220, and measures the deviation.
  • the holding mechanisms on both the left and right sides are put in the holding state, and then the processes of FIGS. 27B to 27E are repeated.
  • the second alignment is terminated and the next operation (FIG. 19, FIG. 21 or FIG. 22) is started.
  • FIG. 28 shows an operation example in which the substrate 10 is placed on the mask 220 in a state where only one of the clamping mechanisms is released.
  • the operations from FIG. 28 (a) to FIG. 28 (c) are the same as FIG. 18 (a) to FIG. 18 (c).
  • FIG. 28 (d) When the position adjustment of the substrate 10 is finished in FIG. 28 (c), as shown in FIG. 28 (d), only the pressing tool 302 on one side (right side in the illustrated example) is raised, and only the right clamping mechanism is released.
  • the holding mechanism on the left side still holds the left side portion of the substrate 10.
  • the substrate 10 is lowered to a position where the second alignment is performed while only one side of the substrate 10 is sandwiched, and the substrate 10 is remounted on the mask 220.
  • the subsequent processing is the same as the operation example of FIG.
  • FIG. 29 shows an operation example in which the substrate 10 is placed on the mask 220 in a state where the clamping force of one clamping mechanism is weaker than the clamping force of the other clamping mechanism.
  • the operations from FIG. 29 (a) to FIG. 29 (c) are the same as FIG. 18 (a) to FIG. 18 (c).
  • FIG. 29D shows that the pressing force of the pressing tool 302 on one side (right side in the illustrated example) is weakened, and the clamping force of the right clamping mechanism is reduced. Is made weaker than the pinching force at the normal time (for example, at 17 (d)).
  • the clamping force of the left clamping mechanism remains normal.
  • the normal clamping force is preferably strong enough that the clamping position of the substrate 10 by the clamping mechanism is not easily shifted even when a horizontal force is applied to the substrate 10.
  • the clamping force of the right clamping mechanism in the case of FIG. 29D is preferably strong enough to cause the clamping position of the substrate 10 to shift relatively easily when a horizontal force is applied to the substrate 10.
  • the substrate 10 is lowered to the position where the second alignment is performed while the clamping force on one side is weakened, and the substrate 10 is remounted on the mask 220.
  • the subsequent processing is the same as the operation example of FIG.
  • FIG. 30 shows an operation example in which the substrate 10 is placed on the mask 220 in a state where the clamping force of the clamping mechanisms on both the left and right sides is weaker than normal.
  • the operations from FIG. 30A to FIG. 30C are the same as those in FIG. 18A to FIG.
  • the pressing force of the pressing tool 302 is weakened, and the clamping force of the clamping mechanisms on both the left and right sides is normal (for example, 17 (d) ) Is weaker than the pinching force of).
  • 30D is preferably strong enough that the sandwiching position of the substrate 10 by the sandwiching mechanism is relatively easily displaced when a horizontal force is applied to the substrate 10.
  • FIG. 30E the substrate 10 is lowered to a position where the second alignment is performed while the clamping force is weakened, and the substrate 10 is remounted on the mask 220.
  • the subsequent processing is the same as the operation example of FIG.
  • the substrate 10 is remounted on the mask 220 in a state in which the clamping mechanism is in the released state or the clamping force is weaker than normal. Since the peripheral edge of the substrate 10 escapes to the outside when the bending of the substrate 10 extends along the mounting surface of the mask 220, no extra stress is applied to the substrate 10. Therefore, the adhesion between the substrate 10 and the mask 220 can be increased, and the position of the substrate 10 can be prevented from being displaced or the surface of the substrate 10 can be prevented from rubbing against the mask 220 when the substrate 10 is placed on the mask 220. As a result, it is possible to improve the alignment accuracy of the second alignment.
  • the clamping is released or weakened.
  • the clamping is released or weakened before the substrate 10 comes into contact with the mask 220 and the deflection of the substrate 10 starts to be extended, the above-described effects can be obtained.
  • the position of the substrate 10 is adjusted.
  • the clamping may be released or weakened before or after the substrate 10 starts to descend (but before the substrate 10 contacts the mask 220).
  • FIG. 20 shows a process of transporting the substrate 10 to the second alignment position after the first alignment described in the third embodiment.
  • the substrate 10 is lowered as shown in FIG. Then, as shown in FIG. 20B, after a part of the substrate 10 (for example, the central portion of the substrate 10 bent by its own weight) contacts the mask 220, the pressing tool 302 is raised to release the clamping mechanism. Put it in a state.
  • FIG. 20C after the substrate holding unit 210 is lowered to the position where the second alignment is performed in the released state (non-clamping state), the substrate is held as shown in FIG. The peripheral portion of the substrate 10 is re-clamped by the mechanism.
  • the subsequent processing is the same as in the third embodiment.
  • the substrate 10 is lowered while the substrate 10 is held by the holding mechanism until the substrate 10 contacts the mask 220. Therefore, there is an advantage that positional deviation of the substrate 10 in the process of bringing the substrate 10 close to the mask 20 can be prevented.
  • FIGS. 20B to 20D when the substrate 10 comes into contact with the mask 220, the clamping mechanism is released, and the substrate 10 is placed on the mask 220 in the released state. Place it. Therefore, when the substrate 10 that has been bent by its own weight returns to a flat shape following the mask 220, the peripheral edge of the substrate 10 escapes to the outside, so that no extra stress is applied to the substrate 10. Therefore, the adhesion between the substrate 10 and the mask 220 can be increased, and the position of the substrate 10 can be prevented from being displaced or the surface of the substrate 10 can be prevented from rubbing against the mask 220 when the substrate 10 is placed on the mask 220.
  • FIG. 21 shows a process of bringing the entire surface of the substrate 10 into close contact with the mask 220 after the second alignment described in the third embodiment.
  • FIG. 22 shows a process of bringing the entire surface of the substrate 10 into close contact with the mask 220 after the second alignment described in the third embodiment.
  • the substrate 10 is lowered (placed), the cooling plate 230 is lowered, and the substrate 10 is fixed by the cooling plate 230 while the clamping mechanism is in the released state.
  • the positional deviation of the substrate 10 that occurs after the second alignment can be suppressed.
  • FIG. 26A shows an overall view of the organic EL display device 60
  • FIG. 26B shows a cross-sectional structure of one pixel.
  • each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes.
  • the pixel refers to a minimum unit that enables display of a desired color in the display area 61.
  • the pixel 62 is configured by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit different light.
  • the pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element. It is not limited.
  • FIG. 26B is a partial schematic cross-sectional view taken along the line AB in FIG.
  • the pixel 62 includes a first electrode (anode) 64, a hole transport layer 65, one of the light emitting layers 66 ⁇ / b> R, 66 ⁇ / b> G, and 66 ⁇ / b> B, an electron transport layer 67, and a second electrode (cathode) 68 on a substrate 63. And an organic EL element.
  • the hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to the organic layer.
  • the light emitting layer 66R is an organic EL layer that emits red
  • the light emitting layer 66G is an organic EL layer that emits green
  • the light emitting layer 66B is an organic EL layer that emits blue.
  • the light emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light emitting elements that emit red, green, and blue (sometimes referred to as organic EL elements).
  • the first electrode 64 is formed separately for each light emitting element.
  • the hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element.
  • an insulating layer 69 is provided between the first electrodes 64 in order to prevent the first electrode 64 and the second electrode 68 from being short-circuited by foreign matter. Furthermore, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.
  • a method of forming a film through a mask is used.
  • display devices have been improved in definition, and a mask having an opening width of several tens of ⁇ m is used for forming an organic EL layer.
  • a film forming apparatus vacuum evaporation apparatus
  • the present invention is suitably used for forming these organic EL layers.
  • a circuit (not shown) for driving the organic EL display device and a substrate 63 on which the first electrode 64 is formed are prepared.
  • An acrylic resin is formed by spin coating on the substrate 63 on which the first electrode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in a portion where the first electrode 64 is formed. 69 is formed. This opening corresponds to a light emitting region where the light emitting element actually emits light.
  • the substrate 63 patterned with the insulating layer 69 is carried into the first film formation apparatus, the substrate is held by the substrate holding unit, and the hole transport layer 65 is a common layer on the first electrode 64 in the display region.
  • the hole transport layer 65 is formed by vacuum deposition. Actually, since the hole transport layer 65 is formed in a size larger than the display region 61, a high-definition mask is not necessary.
  • the substrate 63 on which the hole transport layer 65 is formed is carried into the second film forming apparatus and held by the substrate holding unit.
  • the substrate and the mask are aligned, the substrate is placed on the mask, and the light emitting layer 66R that emits red is formed on the portion of the substrate 63 where the element that emits red is disposed.
  • the mask and the substrate can be satisfactorily overlapped, and highly accurate film formation can be performed.
  • a light emitting layer 66G that emits green light is formed by the third film forming apparatus, and a light emitting layer 66B that emits blue light is formed by the fourth film forming apparatus.
  • the electron transport layer 67 is formed on the entire display region 61 by the fifth film formation apparatus.
  • the electron transport layer 67 is formed as a layer common to the three-color light emitting layers 66R, 66G, and 66B.
  • the substrate on which the electron transport layer 65 is formed is moved to the sputtering apparatus, the second electrode 68 is formed, and then the protective layer 70 is formed by moving to the plasma CVD apparatus, and the organic EL display device 60 is completed. To do.
  • the carrying-in / out of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.
  • the organic EL display device thus obtained, a light emitting layer is accurately formed for each light emitting element. Therefore, if the manufacturing method is used, it is possible to suppress the occurrence of defects in the organic EL display device due to the displacement of the light emitting layer.
  • the said Example shows an example of this invention, This invention is not restricted to the structure of the said Example, You may deform
  • the substrate is moved by the substrate holding unit.
  • the mask that is the mounting body or both the substrate and the mask may be moved.
  • a moving means for the mounting body may be provided in addition to the moving means for the substrate.
  • the camera used for a measurement by 1st alignment and 2nd alignment was used properly, you may use the same camera for 1st alignment and 2nd alignment, and both 1st alignment and 2nd alignment use it. Cameras 260 and 261 may be used.

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Abstract

A substrate mounting method for mounting a substrate on a mounting body, said method including: a first gripping step for gripping the peripheral edge of the substrate using a gripping mechanism; a releasing step for releasing the grip of the substrate by the gripping mechanism; and after the releasing step, in a state in which the substrate is mounted on the mounting body, a second gripping step for gripping the peripheral edge of the substrate using a gripping mechanism. The adhesion between a large, thin substrate and a mask is thereby increased using a simple method.

Description

基板載置方法、成膜方法、電子デバイスの製造方法Substrate mounting method, film forming method, and electronic device manufacturing method
　本発明は、基板載置方法、成膜方法、電子デバイスの製造方法、基板載置装置、成膜装置に関する。 The present invention relates to a substrate placement method, a film formation method, an electronic device manufacturing method, a substrate placement apparatus, and a film formation apparatus.
　近年、基板の大型化、薄型化が進んでおり、基板の自重による撓みの影響が大きくなっている。また、成膜領域を基板中央部に設ける関係上、基板を挟持できるのは基板の周縁部に限られている。 In recent years, the substrate is becoming larger and thinner, and the influence of bending due to the weight of the substrate is increasing. In addition, the substrate can be held only at the peripheral portion of the substrate because the film formation region is provided in the central portion of the substrate.
　そのため、基板の周縁部（例えば対向する一対の辺部）を基板支持体で挟持した状態で基板をマスクに載置すると、周縁部を挟持された基板は、基板の自重で撓んだ中央部とマスクとが接触した際に自由な動きが妨げられ、基板に歪みが生じる。 Therefore, when the substrate is placed on the mask with the peripheral edge of the substrate (for example, a pair of opposing sides) sandwiched between the substrate supports, the substrate sandwiched by the peripheral edge is bent by the weight of the substrate. When the mask and the mask come into contact with each other, free movement is hindered and the substrate is distorted.
　この歪みにより、マスクと基板との間に隙間が生じ、マスクと基板との密着性が低下することで、膜ボケ等の原因となる。 This distortion causes a gap between the mask and the substrate, and the adhesion between the mask and the substrate is reduced, which causes film blurring and the like.
　そこで、例えば、基板等が大型化しても基板とマスクとを良好に密着させるため、特許文献１に開示されるような技術が提案されているが、更なる改善が要望されている。 Therefore, for example, a technique as disclosed in Patent Document 1 has been proposed to satisfactorily bring the substrate and the mask into close contact with each other even when the substrate or the like is enlarged, but further improvement is desired.
　なお、マスクに載置した基板を挟持せずに成膜を行うと、成膜装置内で駆動される蒸発源や搬送機構が動くことで生じる振動によって基板が振動し、この振動に伴い基板とマスクとが擦れ、基板の処理面を傷つけてしまう場合がある。 Note that when film formation is performed without sandwiching the substrate placed on the mask, the substrate vibrates due to vibration generated by movement of an evaporation source or a transport mechanism driven in the film formation apparatus. The mask may rub and damage the processing surface of the substrate.
特開２００９－２７７６５５号公報JP 2009-277655 A
　本発明は、上述のような現状に鑑みなされたもので、簡易な手法で大型・薄型の基板とマスクとの密着性を高めることが可能な技術を提供するものである。 The present invention has been made in view of the above-described situation, and provides a technique capable of improving the adhesion between a large and thin substrate and a mask by a simple method.
　本発明の第一態様は、基板を載置体の上に載置する基板載置方法であって、前記基板を載置体の上に載せた状態で、前記基板の周縁部を挟持機構で挟持することを特徴とする基板載置方法である。 A first aspect of the present invention is a substrate placement method for placing a substrate on a placement body, wherein the substrate is placed on the placement body and a peripheral portion of the substrate is clamped by a holding mechanism. The substrate mounting method is characterized in that the substrate is sandwiched.
　本発明の第二態様は、基板上に所定パターンの成膜を行う成膜方法であって、第一態様に係る基板載置方法により、前記基板を前記載置体の上に載置する工程と、前記基板に成膜を行う工程と、を含むことを特徴とする成膜方法である。 A second aspect of the present invention is a film forming method for forming a predetermined pattern on a substrate, wherein the substrate is placed on the mounting body by the substrate mounting method according to the first aspect. And a step of forming a film on the substrate.
　本発明の第三態様は、基板上に形成された有機膜を有する電子デバイスの製造方法であって、第三態様に係る成膜方法により前記有機膜が形成されることを特徴とする電子デバイスの製造方法である。 A third aspect of the present invention is a method of manufacturing an electronic device having an organic film formed on a substrate, wherein the organic film is formed by the film forming method according to the third aspect. It is a manufacturing method.
　本発明の第四態様は、基板を載置体の上に載置する基板載置装置であって、前記基板の周縁部を挟持するための挟持機構を有する基板保持手段と、前記基板保持手段を制御する制御手段と、を有し、前記制御手段は、前記基板を前記載置体の上に載せた状態で、前記挟持機構が前記基板を挟持していない解放状態から前記挟持機構が前記基板を挟持する挟持状態へ移行するよう、前記基板保持手段を制御することを特徴とする基板載置装置である。 According to a fourth aspect of the present invention, there is provided a substrate mounting apparatus for mounting a substrate on a mounting body, the substrate holding means having a holding mechanism for holding a peripheral edge of the substrate, and the substrate holding means. Control means for controlling, wherein the control means is in a state in which the holding mechanism is placed in a state where the board is placed on the mounting body, and the holding mechanism is in a released state where the holding mechanism is not holding the board. The substrate mounting apparatus is characterized in that the substrate holding means is controlled to shift to a sandwiching state in which a substrate is sandwiched.
　本発明の第五態様は、基板上に所定パターンの成膜を行う成膜装置であって、前記基板を載置体の上に載置する、第四態様に係る基板載置装置と、前記基板に成膜を行う手段と、を有することを特徴とする成膜装置である。 According to a fifth aspect of the present invention, there is provided a film forming apparatus for forming a predetermined pattern on a substrate, the substrate mounting apparatus according to the fourth aspect for mounting the substrate on a mounting body, A film forming apparatus comprising: means for forming a film on a substrate.
　本発明は上述のようにすることで、簡易な手法で大型・薄型の基板とマスクとの密着性を高めることができる。 In the present invention, the adhesion between the large and thin substrate and the mask can be improved by a simple method as described above.
実施例１の基板載置装置を模式的に示す断面図である。It is sectional drawing which shows the board | substrate mounting apparatus of Example 1 typically. 実施例１の挟持機構を模式的に示す断面図である。It is sectional drawing which shows typically the clamping mechanism of Example 1. FIG. 実施例１の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 1. FIG. 実施例１の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 1. FIG. 実施例１の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 1. FIG. 実施例１の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 1. FIG. 実施例１の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 1. FIG. 実施例１の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 1. FIG. 実施例２の基板載置装置を模式的に示す断面図である。It is sectional drawing which shows the board | substrate mounting apparatus of Example 2 typically. 実施例２の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 2. FIG. 実施例２の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 2. FIG. 実施例２の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 2. FIG. 実施例２の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 2. FIG. 実施例２の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 2. FIG. 実施例２の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 2. FIG. 実施例３の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 3. FIG. 実施例３の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 3. FIG. 実施例３の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 3. FIG. 実施例３の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 3. FIG. 実施例４の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 4. FIG. 実施例５の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 5. FIG. 実施例６の基板載置方法の説明図である。It is explanatory drawing of the board | substrate mounting method of Example 6. FIG. 電子デバイスの製造装置の一部を模式的に示す上視図である。It is an upper view which shows typically a part of manufacturing apparatus of an electronic device. 成膜装置の構成を模式的に示す断面図である。It is sectional drawing which shows the structure of the film-forming apparatus typically. 基板保持ユニットの斜視図である。It is a perspective view of a substrate holding unit. （ａ）は有機ＥＬ表示装置の斜視図、（ｂ）は１画素の断面構造図である。(A) is a perspective view of an organic EL display device, (b) is a cross-sectional structure diagram of one pixel. 実施例３の第２アライメント処理の変形例である。12 is a modification of the second alignment process of the third embodiment. 実施例３の第２アライメント処理の変形例である。12 is a modification of the second alignment process of the third embodiment. 実施例３の第２アライメント処理の変形例である。12 is a modification of the second alignment process of the third embodiment. 実施例３の第２アライメント処理の変形例である。12 is a modification of the second alignment process of the third embodiment.
　以下、図面を参照しつつ本発明の好適な実施形態及び実施例を説明する。ただし、以下の実施形態及び実施例は本発明の好ましい構成を例示的に示すものにすぎず、本発明の範囲はそれらの構成に限定されない。また、以下の説明における、装置のハードウェア構成及びソフトウェア構成、処理フロー、製造条件、寸法、材質、形状などは、特に特定的な記載がないかぎりは、本発明の範囲をそれらのみに限定する趣旨のものではない。 Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like limit the scope of the present invention only to those unless otherwise specified. It is not intended.
　本発明は、基板上に薄膜を形成する成膜装置及びその制御方法に関し、特に、基板の高精度な搬送および位置調整のための技術に関する。本発明は、平行平板の基板の表面に真空蒸着により所望のパターンの薄膜（材料層）を形成する装置に好ましく適用できる。基板の材料としては、ガラス、樹脂、金属などの任意の材料を選択でき、また、蒸着材料としても、有機材料、無機材料（金属、金属酸化物など）などの任意の材料を選択できる。本発明の技術は、具体的には、有機電子デバイス（例えば、有機ＥＬ表示装置、薄膜太陽電池）、光学部材などの製造装置に適用可能である。なかでも、有機ＥＬ表示装置の製造装置は、基板の大型化あるいは表示パネルの高精細化により基板の搬送精度及び基板とマスクのアライメント精度のさらなる向上が要求されているため、本発明の好ましい適用例の一つである。 The present invention relates to a film forming apparatus for forming a thin film on a substrate and a control method thereof, and more particularly, to a technique for highly accurate conveyance and position adjustment of a substrate. The present invention can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum deposition on the surface of a parallel plate substrate. Arbitrary materials such as glass, resin, and metal can be selected as the material of the substrate, and any material such as organic material and inorganic material (metal, metal oxide, etc.) can be selected as the vapor deposition material. Specifically, the technology of the present invention can be applied to manufacturing apparatuses such as organic electronic devices (for example, organic EL display devices, thin film solar cells), optical members, and the like. In particular, the organic EL display device manufacturing apparatus is required to further improve the substrate transport accuracy and the substrate / mask alignment accuracy by increasing the size of the substrate or increasing the definition of the display panel. This is one example.
　＜製造装置及び製造プロセス＞
　図２３は、電子デバイスの製造装置の構成の一部を模式的に示す上視図である。図２３の製造装置は、例えば、スマートフォン用の有機ＥＬ表示装置の表示パネルの製造に用いられる。スマートフォン用の表示パネルの場合、例えば約１８００ｍｍ×約１５００ｍｍ、厚み約０．５ｍｍのサイズの基板に有機ＥＬの成膜を行った後、該基板をダイシングして複数の小サイズのパネルが作製される。 <Manufacturing equipment and manufacturing process>
FIG. 23 is a top view schematically showing a part of the configuration of the electronic device manufacturing apparatus. The manufacturing apparatus of FIG. 23 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for a smartphone, for example, after forming an organic EL film on a substrate having a size of about 1800 mm × about 1500 mm and a thickness of about 0.5 mm, the substrate is diced to produce a plurality of small size panels. The
　電子デバイスの製造装置は、一般に、図２３に示すように、複数の成膜室１１１、１１２と、搬送室１１０とを有する。搬送室１１０内には、基板１０を保持し搬送する搬送ロボット１１９が設けられている。搬送ロボット１１９は、例えば、多関節アームに、基板を保持するロボットハンドが取り付けられた構造をもつロボットであり、各成膜室への基板１０の搬入／搬出を行う。 An electronic device manufacturing apparatus generally has a plurality of film forming chambers 111 and 112 and a transfer chamber 110 as shown in FIG. In the transfer chamber 110, a transfer robot 119 for holding and transferring the substrate 10 is provided. The transfer robot 119 is, for example, a robot having a structure in which a robot hand that holds a substrate is attached to an articulated arm, and carries the substrate 10 into and out of each film forming chamber.
　各成膜室１１１、１１２にはそれぞれ成膜装置（蒸着装置ともよぶ）が設けられている。搬送ロボット１１９との基板１０の受け渡し、基板１０とマスクの相対位置の調整（アライメント）、マスク上への基板１０の固定、成膜（蒸着）などの一連の成膜プロセスは、成膜装置によって自動で行われる。各成膜室の成膜装置は、蒸着源の違いやマスクの違いなど細かい点で相違する部分はあるものの、基本的な構成（特に基板の搬送やアライメントに関わる構成）はほぼ共通している。以下、各成膜室の成膜装置の共通構成について説明する。 Each film forming chamber 111, 112 is provided with a film forming apparatus (also referred to as a vapor deposition apparatus). A series of film formation processes such as delivery of the substrate 10 to the transfer robot 119, adjustment of the relative position between the substrate 10 and the mask (alignment), fixation of the substrate 10 on the mask, film formation (evaporation) are performed by the film formation apparatus. Done automatically. The film forming apparatus in each film forming chamber has almost the same basic structure (particularly, the structure related to substrate transport and alignment), although there are differences in details such as the difference in vapor deposition source and mask. . Hereinafter, a common configuration of the film forming apparatuses in the respective film forming chambers will be described.
　＜成膜装置＞
　図２４は、成膜装置の構成を模式的に示す断面図である。以下の説明においては、鉛直方向をＺ方向とするＸＹＺ直交座標系を用いる。成膜時に基板は水平面（ＸＹ平面）と平行となるよう固定されるものとし、このときの基板の短手方向（短辺に平行な方向）をＸ方向、長手方向（長辺に平行な方向）をＹ方向とする。またＺ軸まわりの回転角をθで表す。 <Deposition system>
FIG. 24 is a cross-sectional view schematically showing the configuration of the film forming apparatus. In the following description, an XYZ orthogonal coordinate system in which the vertical direction is the Z direction is used. At the time of film formation, the substrate is fixed so as to be parallel to the horizontal plane (XY plane), and the short direction (direction parallel to the short side) of the substrate at this time is the X direction, and the long direction (direction parallel to the long side). ) In the Y direction. The rotation angle around the Z axis is represented by θ.
　成膜装置は、真空チャンバ２００を有する。真空チャンバ２００の内部は、真空雰囲気か、窒素ガスなどの不活性ガス雰囲気に維持されている。真空チャンバ２００の内部には、概略、基板保持ユニット２１０と、マスク２２０と、マスク台２２１と、冷却板２３０と、蒸着源２４０が設けられる。基板保持ユニット２１０は、搬送ロボット１１９から受け取った基板１０を保持・搬送する手段であり、基板ホルダとも呼ばれる。マスク２２０は、基板１０上に形成する薄膜パターンに対応する開口パターンをもつメタルマスクであり、枠状のマスク台２２１の上に固定されている。成膜時にはマスク２２０の上に基板１０が載置される。したがってマスク２２０は基板１０を載置する載置体としての役割も担う。冷却板２３０は、基板１０（のマスク２２０とは反対側の面）に押し当てられることで基板１０をマスク２２０に密着させる役割と、成膜時の基板１０の温度上昇を抑えることで有機材料の変質や劣化を抑制する役割をもつ板部材である。冷却板２３０がマグネット板を兼ねていてもよい。マグネット板とは、磁力によってマスク２２０を引き付けることで、成膜時の基板１０とマスク２２０の密着性を高める部材である。蒸着源２４０は、蒸着材料、ヒータ、シャッタ、蒸発源の駆動機構、蒸発レートモニタなどから構成される（いずれも不図示）。 The film forming apparatus has a vacuum chamber 200. The inside of the vacuum chamber 200 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In the vacuum chamber 200, a substrate holding unit 210, a mask 220, a mask base 221, a cooling plate 230, and a vapor deposition source 240 are generally provided. The substrate holding unit 210 is means for holding and transporting the substrate 10 received from the transport robot 119, and is also called a substrate holder. The mask 220 is a metal mask having an opening pattern corresponding to the thin film pattern formed on the substrate 10, and is fixed on the frame-shaped mask base 221. The substrate 10 is placed on the mask 220 during film formation. Therefore, the mask 220 also serves as a mounting body on which the substrate 10 is mounted. The cooling plate 230 is pressed against the substrate 10 (the surface opposite to the mask 220) to bring the substrate 10 into close contact with the mask 220, and suppresses an increase in the temperature of the substrate 10 during film formation. It is a plate member that plays a role of suppressing deterioration and deterioration of the steel. The cooling plate 230 may also serve as a magnet plate. The magnet plate is a member that enhances the adhesion between the substrate 10 and the mask 220 during film formation by attracting the mask 220 with a magnetic force. The evaporation source 240 includes an evaporation material, a heater, a shutter, an evaporation source drive mechanism, an evaporation rate monitor, and the like (all not shown).
　真空チャンバ２００の上（外側）には、基板Ｚアクチュエータ２５０、クランプＺアクチュエータ２５１、冷却板Ｚアクチュエータ２５２、Ｘアクチュエータ（不図示）、Ｙアクチュエータ（不図示）、θアクチュエータ（不図示）が設けられている。これらのアクチュエータは、例えば、モータとボールねじ、モータとリニアガイドなどで構成される。基板Ｚアクチュエータ２５０は、基板保持ユニット２１０の全体を昇降（Ｚ方向移動）させるための駆動手段である。クランプＺアクチュエータ２５１は、基板保持ユニット２１０の挟持機構（後述）を開閉させるための駆動手段である。冷却板Ｚアクチュエータ２５２は、冷却板２３０を昇降させるための駆動手段である。Ｘアクチュエータ、Ｙアクチュエータ、θアクチュエータ（以下まとめて「ＸＹθアクチュエータ」と呼ぶ）は基板１０のアライメントのための駆動手段である。ＸＹθアクチュエータは、基板保持ユニット２１０及び冷却板２３０の全体を、Ｘ方向移動、Ｙ方向移動、θ回転させる。なお、本実施形態では、マスク２２０を固定した状態で基板１０のＸ，Ｙ，θを調整する構成としたが、マスク２２０の位置を調整し、又は、基板１０とマスク２２０の両者の位置を調整することで、基板１０とマスク２２０のアライメントを行ってもよい。 A substrate Z actuator 250, a clamp Z actuator 251, a cooling plate Z actuator 252, an X actuator (not shown), a Y actuator (not shown), and a θ actuator (not shown) are provided above (outside) the vacuum chamber 200. ing. These actuators include, for example, a motor and a ball screw, a motor and a linear guide, and the like. The substrate Z actuator 250 is a driving means for moving the entire substrate holding unit 210 up and down (moving in the Z direction). The clamp Z actuator 251 is a driving unit for opening and closing a clamping mechanism (described later) of the substrate holding unit 210. The cooling plate Z actuator 252 is driving means for moving the cooling plate 230 up and down. The X actuator, Y actuator, and θ actuator (hereinafter collectively referred to as “XYθ actuator”) are drive means for alignment of the substrate 10. The XYθ actuator rotates the entire substrate holding unit 210 and the cooling plate 230 in the X direction, the Y direction, and θ rotation. In this embodiment, the X, Y, and θ of the substrate 10 are adjusted with the mask 220 fixed. However, the position of the mask 220 is adjusted, or the positions of both the substrate 10 and the mask 220 are adjusted. By adjusting, the substrate 10 and the mask 220 may be aligned.
　真空チャンバ２００の上（外側）には、基板１０及びマスク２２０のアライメントのために、基板１０及びマスク２２０それぞれの位置を測定するカメラ２６０、２６１が設けられている。カメラ２６０、２６１は、真空チャンバ２００に設けられた窓を通して、基板１０とマスク２２０を撮影する。その画像から基板１０上のアライメントマーク及びマスク２２０上のアライメントマークを認識することで、各々のＸＹ位置やＸＹ面内での相対ズレを計測することができる。短時間で高精度なアライメントを実現するために、大まかに位置合わせを行う第１アライメント（「ラフアライメント」とも称す）と、高精度に位置合わせを行う第２アライメント（「ファインアライメント」とも称す）の２段階のアライメントを実施することが好ましい。その場合、低解像だが広視野の第１アライメント用のカメラ２６０と狭視野だが高解像の第２アライメント用のカメラ２６１の２種類のカメラを用いるとよい。本実施形態では、基板１０及びマスク２２０それぞれについて、対向する一対の辺の２箇所に付されたアライメントマークを２台の第１アライメント用のカメラ２６０で測定し、基板１０及びマスク２２０の４隅に付されたアライメントマークを４台の第２アライメント用のカメラ２６１で測定する。 Cameras 260 and 261 for measuring the positions of the substrate 10 and the mask 220 are provided above (outside) the vacuum chamber 200 in order to align the substrate 10 and the mask 220. The cameras 260 and 261 photograph the substrate 10 and the mask 220 through a window provided in the vacuum chamber 200. By recognizing the alignment mark on the substrate 10 and the alignment mark on the mask 220 from the image, each XY position and relative displacement in the XY plane can be measured. In order to achieve high-precision alignment in a short time, a first alignment that roughly aligns (also referred to as “rough alignment”) and a second alignment that aligns with high accuracy (also referred to as “fine alignment”). It is preferable to perform the two-stage alignment. In that case, it is preferable to use two types of cameras, a low-resolution but wide-field first alignment camera 260 and a narrow-field but high-resolution second alignment camera 261. In the present embodiment, for each of the substrate 10 and the mask 220, alignment marks attached to two locations on a pair of opposing sides are measured by two first alignment cameras 260, and the four corners of the substrate 10 and the mask 220 are measured. The alignment marks attached to are measured with four second alignment cameras 261.
　成膜装置は、制御部２７０を有する。制御部２７０は、基板Ｚアクチュエータ２５０、クランプＺアクチュエータ２５１、冷却板Ｚアクチュエータ２５２、ＸＹθアクチュエータ、及びカメラ２６０、２６１の制御の他、基板１０の搬送及びアライメント、蒸着源の制御、成膜の制御などの機能を有する。制御部２７０は、例えば、プロセッサ、メモリ、ストレージ、Ｉ／Ｏなどを有するコンピュータにより構成可能である。この場合、制御部２７０の機能は、メモリ又はストレージに記憶されたプログラムをプロセッサが実行することにより実現される。コンピュータとしては、汎用のパーソナルコンピュータを用いてもよいし、組込型のコンピュータ又はＰＬＣ（ｐｒｏｇｒａｍｍａｂｌｅ　ｌｏｇｉｃ　ｃｏｎｔｒｏｌｌｅｒ）を用いてもよい。あるいは、制御部２７０の機能の一部又は全部をＡＳＩＣやＦＰＧＡのような回路で構成してもよい。なお、成膜装置ごとに制御部２７０が設けられていてもよいし、１つの制御部２７０が複数の成膜装置を制御してもよい。 The film forming apparatus has a control unit 270. The control unit 270 controls the substrate Z actuator 250, the clamp Z actuator 251, the cooling plate Z actuator 252, the XYθ actuator, and the cameras 260 and 261, as well as transport and alignment of the substrate 10, deposition source control, and film formation control. It has functions such as. The control unit 270 can be configured by a computer having a processor, memory, storage, I / O, and the like, for example. In this case, the function of the control unit 270 is realized by the processor executing a program stored in the memory or storage. As the computer, a general-purpose personal computer may be used, or a built-in computer or a PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control unit 270 may be configured by a circuit such as an ASIC or FPGA. Note that a control unit 270 may be provided for each film forming apparatus, or one control unit 270 may control a plurality of film forming apparatuses.
　なお、基板１０の保持・搬送及びアライメントに関わる構成部分（基板保持ユニット２１０、基板Ｚアクチュエータ２５０、クランプＺアクチュエータ２５１、ＸＹθアクチュエータ、カメラ２６０、２６１、制御部２７０など）は、「基板載置装置」、「基板挟持装置」、「基板搬送装置」などとも呼ばれる。 Note that the components related to holding, transporting, and alignment of the substrate 10 (substrate holding unit 210, substrate Z actuator 250, clamp Z actuator 251, XYθ actuator, cameras 260, 261, control unit 270, etc.) "," Substrate clamping device "," substrate transfer device "and the like.
　＜基板保持ユニット＞
　図２５を参照して基板保持ユニット２１０の構成を説明する。図２５は基板保持ユニット２１０の斜視図である。 <Board holding unit>
The configuration of the substrate holding unit 210 will be described with reference to FIG. FIG. 25 is a perspective view of the substrate holding unit 210.
　基板保持ユニット２１０は、挟持機構によって基板１０の周縁を挟持することにより、基板１０を保持・搬送する手段である。具体的には、基板保持ユニット２１０は、基板１０の４辺それぞれを下から支持する複数の支持具３００が設けられた支持枠体３０１と、各支持具３００との間で基板１０を挟み込む複数の押圧具３０２が設けられたクランプ部材３０３とを有する。一対の支持具３００と押圧具３０２とで１つの挟持機構が構成される。図２５の例では、基板１０の短辺に沿って３つの支持具３００が配置され、長辺に沿って６つの挟持機構（支持具３００と押圧具３０２のペア）が配置されており、長辺２辺を挟持する構成となっている。ただし挟持機構の構成は図２５の例に限られず、処理対象となる基板のサイズや形状あるいは成膜条件などに合わせて、挟持機構の数や配置を適宜変更してもよい。なお、支持具３００は「受け爪」又は「フィンガ」とも呼ばれ、押圧具３０２は「クランプ」とも呼ばれる。 The substrate holding unit 210 is means for holding and transporting the substrate 10 by holding the periphery of the substrate 10 by a holding mechanism. Specifically, the substrate holding unit 210 includes a plurality of support frames 301 provided with a plurality of support tools 300 that support each of the four sides of the substrate 10 from below, and a plurality of the substrate 10 sandwiched between the support tools 300. And a clamp member 303 provided with the pressing tool 302. The pair of support tools 300 and the pressing tool 302 constitute one clamping mechanism. In the example of FIG. 25, three support tools 300 are arranged along the short side of the substrate 10, and six clamping mechanisms (a pair of the support tool 300 and the pressing tool 302) are arranged along the long side. It is configured to sandwich two sides. However, the configuration of the clamping mechanism is not limited to the example of FIG. 25, and the number and arrangement of the clamping mechanisms may be changed as appropriate in accordance with the size and shape of the substrate to be processed or the film formation conditions. The support tool 300 is also called a “receiving claw” or “finger”, and the pressing tool 302 is also called a “clamp”.
　搬送ロボット１１９から基板保持ユニット２１０への基板１０の受け渡しは例えば次のように行われる。まず、クランプＺアクチュエータ２５１によりクランプ部材３０３を上昇させ、押圧具３０２を支持具３００から離間させることで、挟持機構を解放状態にする。搬送ロボット１１９によって支持具３００と押圧具３０２の間に基板１０を導入した後、クランプＺアクチュエータ２５１によってクランプ部材３０３を下降させ、押圧具３０２を所定の押圧力で支持具３００に押し当てる。これにより、押圧具３０２と支持具３００の間で基板１０が挟持される。この状態で基板Ｚアクチュエータ２５０により基板保持ユニット２１０を駆動することで、基板１０を昇降（Ｚ方向移動）させることができる。なお、クランプＺアクチュエータ２５１は基板保持ユニット２１０と共に上昇／下降するため、基板保持ユニット２１０が昇降しても挟持機構の状態は変化しない。 Delivery of the substrate 10 from the transfer robot 119 to the substrate holding unit 210 is performed as follows, for example. First, the clamp member 303 is raised by the clamp Z actuator 251, and the pressing tool 302 is separated from the support tool 300, so that the clamping mechanism is released. After the substrate 10 is introduced between the support tool 300 and the pressing tool 302 by the transport robot 119, the clamp member 303 is lowered by the clamp Z actuator 251, and the pressing tool 302 is pressed against the support tool 300 with a predetermined pressing force. As a result, the substrate 10 is sandwiched between the pressing tool 302 and the support tool 300. In this state, by driving the substrate holding unit 210 by the substrate Z actuator 250, the substrate 10 can be moved up and down (moved in the Z direction). Since the clamp Z actuator 251 is raised / lowered together with the substrate holding unit 210, the state of the clamping mechanism does not change even when the substrate holding unit 210 is raised / lowered.
　なお、図２５の符号１０１は、基板１０の４隅に付された第２アライメント用のアライメントマークを示し、符号１０２は、基板１０の短辺中央に付された第１アライメント用のアライメントマークを示している。 In FIG. 25, reference numeral 101 denotes a second alignment alignment mark attached to the four corners of the substrate 10, and reference numeral 102 denotes a first alignment alignment mark attached to the center of the short side of the substrate 10. Show.
　＜実施例１＞
　本発明の実施例１に係る基板載置方法を、図１～図８に基づいて簡単に説明する。図１～図８は、説明の便宜のため、成膜装置の基板保持ユニット６と基板２の載置体であるマスク１の部分を模式的に示したものである。 <Example 1>
A substrate placement method according to Embodiment 1 of the present invention will be briefly described with reference to FIGS. 1 to 8 schematically show a portion of the mask 1 which is a mounting body of the substrate holding unit 6 and the substrate 2 of the film forming apparatus for convenience of explanation.
　実施例１は、基板２を載置体であるマスク１の上に載置する方法であって、基板２をマスク１の上に載せた状態で、基板２の周縁部を基板保持ユニット６の挟持機構で挟持することを特徴とする基板載置方法である。言い換えると、実施例１は、基板２の少なくとも一部をマスク１の上に載せた後に、挟持機構が解放状態（非挟持状態）から挟持状態へ移行するよう、制御部により基板保持ユニット６を制御する方法である。基板２をマスク１の上に載せた状態で基板２の周縁部を挟持することで、基板２の撓み（歪み）を矯正することができる。 Embodiment 1 is a method of placing a substrate 2 on a mask 1 that is a placement body. In the state where the substrate 2 is placed on the mask 1, the peripheral portion of the substrate 2 is placed on the substrate holding unit 6. The substrate mounting method is characterized in that the substrate is clamped by a clamping mechanism. In other words, in the first embodiment, after the substrate 2 is placed on the mask 1, the controller holds the substrate holding unit 6 so that the holding mechanism shifts from the released state (non-holding state) to the holding state. How to control. By sandwiching the peripheral edge of the substrate 2 with the substrate 2 placed on the mask 1, the bending (distortion) of the substrate 2 can be corrected.
　即ち、基板２が自重で撓んでいるために、基板２とマスク１を相対的に近づけていくと基板中央部がマスク１と先行接触する。このとき基板２の周縁部が挟持されていないため、マスク１との接触により生じる基板２の変形が挟持機構により阻害されず、基板２が外方に伸展していく。これにより、基板２をマスク１に良好に沿わせることができ、基板２を歪みなくマスク１と密着させた状態で挟持することが可能となる。 That is, since the substrate 2 is bent by its own weight, when the substrate 2 and the mask 1 are relatively brought closer, the central portion of the substrate comes into contact with the mask 1 in advance. At this time, since the peripheral portion of the substrate 2 is not sandwiched, the deformation of the substrate 2 caused by the contact with the mask 1 is not hindered by the sandwiching mechanism, and the substrate 2 extends outward. As a result, the substrate 2 can be satisfactorily placed along the mask 1, and the substrate 2 can be held in a state of being in close contact with the mask 1 without distortion.
　よって、基板２をマスク１に隙間なく良好に密着させた状態で成膜を行うことが可能となり、マスク１と基板２との密着性の低下に起因する膜ボケを解消することが可能となる。また、基板２をマスク１の上に載せた状態で基板２の周縁部が挟持機構により挟持されるため、成膜装置の内部で生じる振動が原因で生じるマスク１と基板２との擦れが防止されて、基板２の処理面に傷が付くことを防止できる。 Therefore, it is possible to perform film formation while the substrate 2 is in good contact with the mask 1 without any gap, and it is possible to eliminate film blurring caused by a decrease in the adhesion between the mask 1 and the substrate 2. . Further, since the peripheral portion of the substrate 2 is sandwiched by the sandwiching mechanism with the substrate 2 placed on the mask 1, the friction between the mask 1 and the substrate 2 caused by the vibration generated inside the film forming apparatus is prevented. Thus, the processing surface of the substrate 2 can be prevented from being damaged.
　ここで「基板２をマスク（載置体）１の上に載せた状態」とは、基板２の少なくとも一部がマスク１と接触している状態を意味する。すなわち、「基板２をマスク１の上に載せた状態」は、基板２とマスク１を相対的に近づけていったときに「基板２がマスク１と接触開始した時点（図６）」、さらに近づけて「基板２とマスク１の接触面積が接触開始時点よりも増えた時点（図７）」、さらに近づけて「基板２の全体がマスク１の上に載置された時点（図８）」のいずれの時点の状態も含む。基板載置後の基板２とマスク１との密着性の点からは、基板２の周縁部を挟持するタイミングは、図６の状態よりも図７の状態が好ましく、更には、図８の状態であることがより好ましい。 Here, “the state in which the substrate 2 is placed on the mask (mounting body) 1” means a state in which at least a part of the substrate 2 is in contact with the mask 1. That is, “the state in which the substrate 2 is placed on the mask 1” means “when the substrate 2 starts to contact the mask 1 (FIG. 6)” when the substrate 2 and the mask 1 are relatively close to each other. Approaching "when the contact area between the substrate 2 and the mask 1 is increased from the contact start time (FIG. 7)", and approaching further "when the entire substrate 2 is placed on the mask 1 (FIG. 8)" The state at any point in time is included. From the point of adhesion between the substrate 2 and the mask 1 after the substrate is placed, the timing of sandwiching the peripheral portion of the substrate 2 is preferably the state of FIG. 7 rather than the state of FIG. 6, and further the state of FIG. It is more preferable that
　本実施例は、真空チャンバ５内に、基板２と、成膜パターンを画定するための開口部を有する成膜用のマスク１とを配置して成膜機構を用いて成膜を行う成膜装置に本発明を適用した例である。 In this embodiment, a film is formed using a film forming mechanism by disposing a substrate 2 and a film forming mask 1 having an opening for defining a film forming pattern in a vacuum chamber 5. This is an example in which the present invention is applied to an apparatus.
　具体的には、真空チャンバ５には載置体としてのマスク１がマスク台４に支持された状態で配置され、このマスク１と基板２との相対距離を変化させる移動機構３が設けられている。 Specifically, the vacuum chamber 5 is provided with a mask 1 serving as a mounting body supported by a mask table 4, and a moving mechanism 3 that changes the relative distance between the mask 1 and the substrate 2 is provided. Yes.
　なお、載置体は、基板２の撓み（歪み）を解消するために一時的に基板２を載せておく載置台等、マスク１以外のものとしても良い。この場合には、マスク１に載置する前に既に撓み等が矯正された状態で挟持された基板２をマスク１に載置することが可能となり、基板２とマスク１を良好に密着させることが可能となる。 Note that the mounting body may be other than the mask 1 such as a mounting table on which the substrate 2 is temporarily mounted in order to eliminate bending (distortion) of the substrate 2. In this case, it is possible to place the substrate 2 sandwiched in a state in which the bending or the like has already been corrected before being placed on the mask 1 on the mask 1, so that the substrate 2 and the mask 1 are in good contact with each other. Is possible.
　移動機構３は、その固定部が真空チャンバ５の壁面に取り付けられ、固定部に進退自在に設けられた移動部の先端部に基板保持ユニット６が設けられている。従って、移動部を進退移動させることで、基板保持ユニット６に支持された基板２がマスク１に対して接離移動する。 The moving mechanism 3 has a fixed portion attached to the wall surface of the vacuum chamber 5 and a substrate holding unit 6 provided at the tip of the moving portion that is provided in the fixed portion so as to be freely advanced and retracted. Therefore, the substrate 2 supported by the substrate holding unit 6 moves toward and away from the mask 1 by moving the moving portion forward and backward.
　図２に示すように、基板保持ユニット６には、基板２の周縁部の下面と接触する支持具７、及び、この支持具７と基板２を挟むように基板２の上面側に設けられる押圧具８が設けられている。 As shown in FIG. 2, the substrate holding unit 6 has a support 7 in contact with the lower surface of the peripheral edge of the substrate 2, and a pressure provided on the upper surface side of the substrate 2 so as to sandwich the support 7 and the substrate 2. A tool 8 is provided.
　具体的には、基板保持ユニット６は、胴部の左右に袖部が垂設された形状であり、袖部の先端から内方に突出するように支持具７が設けられている。また、この支持具７に夫々対向するように押圧具８が移動自在に設けられた基部９が設けられている。 Specifically, the substrate holding unit 6 has a shape in which sleeve portions are suspended from the left and right sides of the body portion, and a support 7 is provided so as to protrude inward from the tip of the sleeve portion. Further, a base 9 is provided on which a pressing tool 8 is movably provided so as to face the support tool 7.
　押圧具８は、基部９から突出して基板２を支持具７に押し付けることで基板２を挟持するように構成されている。この支持具７及び押圧具８（挟持機構）により、押圧具８を基板２に押圧した挟持状態と、基板２から押圧具８を後退させて基板２を挟持しない解放状態とに適宜切り替えることが可能となる。なお、本実施例における解放状態とは、いずれの挟持機構によっても基板２が挟持されていない状態をいう。 The pressing tool 8 is configured to sandwich the substrate 2 by protruding from the base 9 and pressing the substrate 2 against the support 7. By the support tool 7 and the pressing tool 8 (clamping mechanism), the holding tool 7 and the pressing tool 8 can be appropriately switched between a holding state in which the pressing tool 8 is pressed against the substrate 2 and a released state in which the pressing tool 8 is retracted from the substrate 2 and the substrate 2 is not clamped. It becomes possible. In the present embodiment, the released state refers to a state where the substrate 2 is not clamped by any clamping mechanism.
　支持具７及び押圧具８（挟持機構）は、基板２の複数の辺部を挟持するように複数設けられている。本実施例では、支持具７及び押圧具８は基板２の対向する一対の辺部をそれぞれ挟持するように設けられている。 A plurality of support tools 7 and pressing tools 8 (clamping mechanisms) are provided so as to clamp a plurality of sides of the substrate 2. In the present embodiment, the support tool 7 and the pressing tool 8 are provided so as to sandwich a pair of opposite sides of the substrate 2.
　また、本実施例では、１つの辺部に対して当該辺部の長手方向略全体に当接するように前記一対の支持具７及び押圧具８が夫々構成されている。なお、１つの辺部に対して複数の支持具７及び押圧具８を設けて１つの辺部を多数点で支持及び挟持する構成としても良い。また、基板２の角部を複数箇所挟持する構成としても良い。 Further, in the present embodiment, the pair of support tools 7 and the pressing tool 8 are respectively configured so as to come into contact with substantially one entire side portion in the longitudinal direction. In addition, it is good also as a structure which provides the some support tool 7 and the pressing tool 8 with respect to one side part, and supports and clamps one side part in many points. Moreover, it is good also as a structure which clamps the corner | angular part of the board | substrate 2 in multiple places.
　以上の構成の移動機構３及び挟持機構を用い、マスク１に基板２を接触させ、このマスク１に接触させた状態で基板２の周縁部を挟持機構により挟持する。即ち、本実施例では、マスク１に基板２を解放状態で接触させた後、挟持する。 The substrate 2 is brought into contact with the mask 1 using the moving mechanism 3 and the sandwiching mechanism having the above-described configuration, and the peripheral portion of the substrate 2 is sandwiched by the sandwiching mechanism while being in contact with the mask 1. That is, in this embodiment, the substrate 2 is brought into contact with the mask 1 in the released state, and then sandwiched.
　具体的には、基板２の挟持は、基板２とマスク１との相対距離を変化させる移動機構３により基板２とマスク１との相対距離を近づけ、基板２とマスク１との接触後、基板２とマスク１との接触面積が接触開始時より増えた時点で行う。 Specifically, the holding of the substrate 2 is performed by bringing the relative distance between the substrate 2 and the mask 1 closer by the moving mechanism 3 that changes the relative distance between the substrate 2 and the mask 1. 2 is performed when the contact area between the mask 2 and the mask 1 increases from the start of contact.
　本実施例では、図３～図８に図示したように、例えば、真空チャンバ５外部の基板搬送ロボットから搬送された基板２を真空チャンバ５内に搬入して基板保持ユニット６で受け取る時点（図３）、基板２をマスク１に載置するための下降開始時点（図４）、下降途中時点（図５）、基板２がマスク１に接触した時点（図６）、及び、基板２がマスク１に接触した後、接触面積を増加させながら更に下降する時点（図７）までは挟持機構を解放状態とし、基板２がマスク１上に重なり合った載置終了時点で挟持する（図８）。 In this embodiment, as shown in FIGS. 3 to 8, for example, when the substrate 2 transported from the substrate transport robot outside the vacuum chamber 5 is carried into the vacuum chamber 5 and received by the substrate holding unit 6 (FIG. 3). 3), a descent start time (FIG. 4), a descent time point (FIG. 5), a time point when the substrate 2 comes into contact with the mask 1 (FIG. 6), and the substrate 2 is a mask. After the contact with 1, the holding mechanism is released until the contact area is further lowered while increasing the contact area (FIG. 7), and the substrate 2 is clamped at the end of placement when the substrate 2 overlaps the mask 1 (FIG. 8).
　これにより、マスク１との接触面積を増加させながら基板２が下降していく際、解放状態（非挟持状態）で基板２がマスク１と接触するので、基板２の変形が挟持機構に阻害されず、基板２が外方に伸展していく。これにより、基板２をマスク１に良好に沿わせることができ、基板２を歪みなくマスク１と密着させた状態で挟持することが可能となる。 Thereby, when the substrate 2 descends while increasing the contact area with the mask 1, the substrate 2 comes into contact with the mask 1 in the released state (non-clamping state), so that the deformation of the substrate 2 is hindered by the clamping mechanism. First, the substrate 2 extends outward. As a result, the substrate 2 can be satisfactorily placed along the mask 1, and the substrate 2 can be held in a state of being in close contact with the mask 1 without distortion.
　なお、図６の時点で解放状態であり、図８の時点で挟持する工程が含まれていれば、図３～図５，図７の時点では挟持・解放のいずれの状態でも、基板の擦れ防止効果は発揮されることを確認している。 If it is in the released state at the time of FIG. 6 and includes the step of holding at the time of FIG. 8, the substrate is rubbed in either the holding or released state at the time of FIGS. 3 to 5 and FIG. It has been confirmed that the prevention effect is exhibited.
　＜実施例２＞
　本発明の実施例２に係る基板載置方法を、図９～図１５に基づいて簡単に説明する。図９～図１５は、説明の便宜のため、成膜装置の基板保持ユニット６と基板２の載置体であるマスク１の部分を模式的に示したものである。 <Example 2>
A substrate mounting method according to Embodiment 2 of the present invention will be briefly described with reference to FIGS. 9 to 15 schematically show a portion of the mask 1 which is a mounting body of the substrate holding unit 6 and the substrate 2 of the film forming apparatus for convenience of explanation.
　実施例２は、基板２を載置体であるマスク１の上に載置する方法であって、基板２をマスク１の上に載せた状態での、挟持機構による基板２の周縁部の挟持は、挟持機構による基板２の挟持を一度解放した後に、再度行われた挟持であることを特徴とする基板載置方法である。言い換えると、実施例２は、基板２の周縁部を挟持機構により挟持する第１の挟持工程と、前記第１の挟持工程における基板２の挟持を解放する解放工程と、前記解放工程の後に、基板２を載置体であるマスク１の上に載せた状態で、基板２の周縁部を挟持機構により挟持する第２の挟持工程と、を有する基板載置方法である。 Example 2 is a method of placing the substrate 2 on the mask 1 which is a placing body, and sandwiching the peripheral portion of the substrate 2 by the sandwiching mechanism in a state where the substrate 2 is placed on the mask 1. Is a substrate mounting method characterized in that the holding is performed again after releasing the holding of the substrate 2 by the holding mechanism once. In other words, in the second embodiment, after the first clamping step of clamping the peripheral portion of the substrate 2 by the clamping mechanism, the releasing step of releasing the clamping of the substrate 2 in the first clamping step, and after the releasing step, And a second clamping step of clamping the peripheral edge of the substrate 2 by a clamping mechanism in a state where the substrate 2 is placed on the mask 1 as a mounting body.
　例えば、基板２の周縁部を基板保持ユニット６の挟持機構で挟持した状態で基板２をマスク１近傍まで搬送し、基板２の少なくとも一部がマスク１に接触した時点で挟持機構を一旦解放状態とし、その後、挟持機構により基板２の周縁部を再挟持する。 For example, the substrate 2 is transported to the vicinity of the mask 1 with the peripheral edge of the substrate 2 held by the holding mechanism of the substrate holding unit 6, and the holding mechanism is temporarily released when at least a part of the substrate 2 contacts the mask 1. Then, the peripheral portion of the substrate 2 is re-clamped by the clamping mechanism.
　挟持機構を一旦解放状態とするため、マスク１との接触により生じる基板２の変形が挟持機構により阻害されず、基板２が外方に伸展する。これにより、基板２をマスク１に良好に沿わせることができ、基板２を歪みなくマスク１と密着させた状態で挟持することが可能となる。 Since the clamping mechanism is once released, the deformation of the substrate 2 caused by the contact with the mask 1 is not hindered by the clamping mechanism, and the substrate 2 extends outward. As a result, the substrate 2 can be satisfactorily placed along the mask 1, and the substrate 2 can be held in a state of being in close contact with the mask 1 without distortion.
　よって、基板２をマスク１に隙間なく良好に密着させた状態で成膜を行うことが可能となり、マスク１と基板２との密着性の低下に起因する膜ボケを解消することが可能となる。また、基板２をマスク１の上に載せた状態で基板２の周縁部が挟持機構により再挟持されるため、成膜装置の内部で生じる振動が原因で生じるマスク１と基板２との擦れが防止されて、基板２の処理面に傷が付くことを防止できる。 Therefore, it is possible to perform film formation while the substrate 2 is in good contact with the mask 1 without any gap, and it is possible to eliminate film blurring caused by a decrease in the adhesion between the mask 1 and the substrate 2. . Further, since the peripheral portion of the substrate 2 is re-clamped by the clamping mechanism in a state where the substrate 2 is placed on the mask 1, the mask 1 and the substrate 2 are rubbed due to vibrations generated inside the film forming apparatus. Thus, the processing surface of the substrate 2 can be prevented from being damaged.
　ここで「基板２をマスク（載置体）１の上に載せた状態」とは、基板２の少なくとも一部がマスク１と接触している状態を意味する。すなわち、「基板２をマスク１の上に載せた状態」は、基板２とマスク１を相対的に近づけていったときに「基板２がマスク１と接触開始した時点（図１３）」、さらに近づけて「基板２とマスク１の接触面積が接触開始時点よりも増えた時点（図１４）」、さらに近づけて「基板２の全体がマスク１の上に載置された時点（図１５）」のいずれの時点の状態も含む。基板載置後の基板２とマスク１との密着性の点からは、基板２の周縁部を再挟持するタイミングは、図１３の状態よりも図１４の状態が好ましく、更には、図１５の状態であることがより好ましい。 Here, “the state in which the substrate 2 is placed on the mask (mounting body) 1” means a state in which at least a part of the substrate 2 is in contact with the mask 1. That is, “the state where the substrate 2 is placed on the mask 1” means “when the substrate 2 starts to contact the mask 1 (FIG. 13)” when the substrate 2 and the mask 1 are relatively close to each other. Approaching “when the contact area of the substrate 2 and the mask 1 is increased from the contact start time (FIG. 14)”, approaching further “when the entire substrate 2 is placed on the mask 1 (FIG. 15)”. The state at any point in time is included. From the point of adhesion between the substrate 2 and the mask 1 after the substrate is placed, the timing of re-clamping the peripheral portion of the substrate 2 is preferably the state of FIG. 14 rather than the state of FIG. More preferably, it is in a state.
　本実施例は、真空チャンバ５内に、基板２と、成膜パターンを画定するための開口部を有する成膜用のマスク１とを配置して成膜機構を用いて成膜を行う成膜装置に本発明を適用した例である。 In this embodiment, a film is formed using a film forming mechanism by disposing a substrate 2 and a film forming mask 1 having an opening for defining a film forming pattern in a vacuum chamber 5. This is an example in which the present invention is applied to an apparatus.
　具体的には、真空チャンバ５には載置体としてのマスク１がマスク台４に支持された状態で配置され、このマスク１と基板２との相対距離を変化させる移動機構３が設けられている。 Specifically, the vacuum chamber 5 is provided with a mask 1 serving as a mounting body supported by a mask table 4, and a moving mechanism 3 that changes the relative distance between the mask 1 and the substrate 2 is provided. Yes.
　なお、載置体は、基板２の撓み（歪み）を解消するために一時的に基板２を載せておく載置台等、マスク１以外のものとしても良い。この場合には、マスク１に載置する前に既に撓み等が矯正された状態で挟持された基板２をマスク１に載置することが可能となり、基板２とマスク１を良好に密着させることが可能となる。 Note that the mounting body may be other than the mask 1 such as a mounting table on which the substrate 2 is temporarily mounted in order to eliminate bending (distortion) of the substrate 2. In this case, it is possible to place the substrate 2 sandwiched in a state in which the bending or the like has already been corrected before being placed on the mask 1 on the mask 1, so that the substrate 2 and the mask 1 are in good contact with each other. Is possible.
　移動機構３は、その固定部が真空チャンバ５の壁面に取り付けられ、固定部に進退自在に設けられた移動部の先端部に基板保持ユニット６が設けられている。従って、移動部を進退移動させることで、基板保持ユニット６に支持された基板２がマスク１に対して接離移動する。 The moving mechanism 3 has a fixed portion attached to the wall surface of the vacuum chamber 5 and a substrate holding unit 6 provided at the tip of the moving portion that is provided in the fixed portion so as to be freely advanced and retracted. Therefore, the substrate 2 supported by the substrate holding unit 6 moves toward and away from the mask 1 by moving the moving portion forward and backward.
　基板保持ユニット６には、基板２の周縁部の下面と接触する支持具７、及び、この支持具７と基板２を挟むように基板２の上面側に設けられる押圧具８が設けられている。 The substrate holding unit 6 is provided with a support 7 that contacts the lower surface of the peripheral edge of the substrate 2 and a pressing tool 8 that is provided on the upper surface side of the substrate 2 so as to sandwich the support 7 and the substrate 2. .
　具体的には、基板保持ユニット６は、胴部の左右に袖部が垂設された形状であり、袖部の先端から内方に突出するように支持具７が設けられている。また、この支持具７に夫々対向するように押圧具８が移動自在に設けられた基部９が設けられている。 Specifically, the substrate holding unit 6 has a shape in which sleeve portions are suspended from the left and right sides of the body portion, and a support 7 is provided so as to protrude inward from the tip of the sleeve portion. Further, a base 9 is provided on which a pressing tool 8 is movably provided so as to face the support tool 7.
　押圧具８は、基部９から突出して基板２を支持具７に押し付けることで基板２を挟持するように構成されている。この支持具７及び押圧具８（挟持機構）により、押圧具８を基板２に押圧した挟持状態と、基板２から押圧具８を後退させて基板２を挟持しない解放状態とに適宜切り替えることが可能となる。なお、本実施例における解放状態とは、いずれの挟持機構によっても基板２が挟持されていない状態をいう。 The pressing tool 8 is configured to sandwich the substrate 2 by protruding from the base 9 and pressing the substrate 2 against the support 7. By the support tool 7 and the pressing tool 8 (clamping mechanism), the holding tool 7 and the pressing tool 8 can be appropriately switched between a holding state in which the pressing tool 8 is pressed against the substrate 2 and a released state in which the pressing tool 8 is retracted from the substrate 2 and the substrate 2 is not clamped. It becomes possible. In the present embodiment, the released state refers to a state where the substrate 2 is not clamped by any clamping mechanism.
　支持具７及び押圧具８（挟持機構）は、基板２の複数の辺部を挟持するように複数設けられている。本実施例では、支持具７及び押圧具８は基板２の対向する一対の辺部をそれぞれ挟持するように設けられている。 A plurality of support tools 7 and pressing tools 8 (clamping mechanisms) are provided so as to clamp a plurality of sides of the substrate 2. In the present embodiment, the support tool 7 and the pressing tool 8 are provided so as to sandwich a pair of opposite sides of the substrate 2.
　また、本実施例では、１つの辺部に対して当該辺部の長手方向略全体に当接するように前記一対の支持具７及び押圧具８が夫々構成されている。なお、１つの辺部に対して複数の支持具７及び押圧具８を設けて１つの辺部を多数点で支持及び挟持する構成としても良い。また、基板２の角部を複数箇所挟持する構成としても良い。 Further, in the present embodiment, the pair of support tools 7 and the pressing tool 8 are respectively configured so as to come into contact with substantially one entire side portion in the longitudinal direction. In addition, it is good also as a structure which provides the some support tool 7 and the pressing tool 8 with respect to one side part, and supports and clamps one side part in many points. Moreover, it is good also as a structure which clamps the corner | angular part of the board | substrate 2 in multiple places.
　以上の構成により、挟持機構により基板２の周縁部を挟持した状態で基板２とマスク１との相対距離を近づけ、基板２の少なくとも一部がマスク１に接触した時点で挟持機構を解放状態とする。そして、更に基板２とマスク１との相対距離を近づけて基板２の全面をマスク１に載せた後、挟持機構で基板２の周縁部を再挟持する。 With the above-described configuration, the relative distance between the substrate 2 and the mask 1 is reduced while the peripheral portion of the substrate 2 is clamped by the clamping mechanism, and the clamping mechanism is released when at least a part of the substrate 2 comes into contact with the mask 1. To do. Then, the relative distance between the substrate 2 and the mask 1 is further reduced and the entire surface of the substrate 2 is placed on the mask 1, and then the peripheral portion of the substrate 2 is re-clamped by the clamping mechanism.
　具体的には、図１０～図１５に図示したように、例えば、真空チャンバ５外部の基板搬送ロボットから搬送された基板２を真空チャンバ５内に搬入して基板保持ユニット６で受け取る時点（図１０）、基板２をマスク１に載置するための下降開始時点（図１１）、下降途中時点（図１２）、基板２がマスク１に接触した時点（図１３）までは挟持しておき、基板２がマスク１に接触した後、更に下降させる際には解放状態とし（図１４）、基板２がマスク１上に重なり合った時点で再挟持する（図１５）。 Specifically, as shown in FIGS. 10 to 15, for example, when the substrate 2 transferred from the substrate transfer robot outside the vacuum chamber 5 is carried into the vacuum chamber 5 and received by the substrate holding unit 6 (see FIG. 10). 10) It is clamped until the descent start time (FIG. 11) for placing the substrate 2 on the mask 1 (FIG. 11), the descent time point (FIG. 12), and the time point when the substrate 2 contacts the mask 1 (FIG. 13). When the substrate 2 comes into contact with the mask 1 and is further lowered, the substrate 2 is released (FIG. 14), and re-clamped when the substrate 2 overlaps the mask 1 (FIG. 15).
　これにより、マスク１との接触面積を増加させながら基板２が下降していく際、解放状態（非挟持状態）で基板２がマスク１と接触するので、基板２の変形が挟持機構に阻害されず、基板２が外方に伸展していく。これにより、基板２をマスク１に良好に沿わせることができ、基板２を歪みなくマスク１と密着させた状態で挟持することが可能となる。従って、安定的に基板２を搬送しつつ、マスク１との接触時の変形を防止して膜ボケを良好に防止できることになる。 Thereby, when the substrate 2 descends while increasing the contact area with the mask 1, the substrate 2 comes into contact with the mask 1 in the released state (non-clamping state), so that the deformation of the substrate 2 is hindered by the clamping mechanism. First, the substrate 2 extends outward. As a result, the substrate 2 can be satisfactorily placed along the mask 1, and the substrate 2 can be held in a state of being in close contact with the mask 1 without distortion. Therefore, while stably transporting the substrate 2, deformation at the time of contact with the mask 1 can be prevented and film blurring can be satisfactorily prevented.
　なお、図１４の時点で解放状態とし、図１５の時点で再挟持する工程が含まれていれば、図１０～図１３の全ての時点で挟持していなくとも少なくともいずれか１つの時点で挟持すれば、膜ボケ防止効果は発揮されることを確認している。 In addition, if the step of releasing is performed at the time of FIG. 14 and re-clamping at the time of FIG. 15 is included, it is clamped at at least one time even if not clamped at all the times of FIGS. In this way, it has been confirmed that the film blurring prevention effect is exhibited.
　また、図１０～図１３の時点において、基板２は挟持された状態で下降するので、下降中に基板２に作用する慣性力によって基板２がずれることがない。 Further, at the time of FIGS. 10 to 13, since the substrate 2 is lowered while being sandwiched, the substrate 2 is not displaced by the inertial force acting on the substrate 2 during the lowering.
　＜実施例３＞
　本発明の実施例３に係る基板載置方法を、図１６～図１９に基づいて説明する。図１６～図１９は、基板保持ユニット２１０が基板１０を搬送ロボット１１９から受け取り、マスク（載置体）２２０の上に載置するまでの一連の処理を示す。 <Example 3>
A substrate mounting method according to Embodiment 3 of the present invention will be described with reference to FIGS. FIGS. 16 to 19 show a series of processes until the substrate holding unit 210 receives the substrate 10 from the transfer robot 119 and places it on the mask (mounting body) 220.
　図１６（ａ）は、搬送ロボット１１９から基板保持ユニット２１０に基板１０が受け渡された直後の状態を示す。基板１０は自重によりその中央が下方に撓んでいる。次に、図１６（ｂ）に示すように、クランプ部材３０３を下降させて押圧具３０２を所定の押圧力で支持具３００に押し当てる。これにより、押圧具３０２と支持具３００からなる挟持機構により基板１０の左右の辺部が挟持される。 FIG. 16A shows a state immediately after the substrate 10 is transferred from the transfer robot 119 to the substrate holding unit 210. The center of the substrate 10 is bent downward by its own weight. Next, as shown in FIG. 16B, the clamp member 303 is lowered and the pressing tool 302 is pressed against the support tool 300 with a predetermined pressing force. Accordingly, the left and right sides of the substrate 10 are clamped by the clamping mechanism including the pressing tool 302 and the support tool 300.
　図１６（ｃ）は、第１アライメントを示す図である。第１アライメントは、ＸＹ面内（マスク２２０の表面に平行な方向）における、基板１０とマスク２２０との相対位置を大まかに調整する第１の位置調整処理であり、「ラフアライメント」とも称される。第１アライメントでは、カメラ２６０によって基板１０に設けられた基板アライメントマーク１０２とマスク２２０に設けられたマスクアライメントマーク（不図示）を認識し、各々のＸＹ位置やＸＹ面内での相対ズレを計測し、位置合わせを行う。第１アライメントに用いるカメラ２６０は、大まかな位置合わせができるように、低解像だが広視野なカメラである。位置合わせの際には、基板１０（基板保持ユニット２１０）の位置を調整してもよいし、マスク２２０の位置を調整してもよいし、基板１０とマスク２２０の両者の位置を調整してもよい。 FIG. 16C is a diagram showing the first alignment. The first alignment is a first position adjustment process for roughly adjusting the relative position between the substrate 10 and the mask 220 in the XY plane (direction parallel to the surface of the mask 220), and is also referred to as “rough alignment”. The In the first alignment, the substrate alignment mark 102 provided on the substrate 10 and the mask alignment mark (not shown) provided on the mask 220 are recognized by the camera 260, and each XY position and relative displacement in the XY plane are measured. And align. The camera 260 used for the first alignment is a low-resolution but wide-field camera so that rough alignment is possible. At the time of alignment, the position of the substrate 10 (substrate holding unit 210) may be adjusted, the position of the mask 220 may be adjusted, or the positions of both the substrate 10 and the mask 220 may be adjusted. Also good.
　第１アライメント処理が完了したら、図１７（ａ）に示すように基板１０を下降させる。そして、図１７（ｂ）に示すように、基板１０がマスク２２０に接触する前に、押圧具３０２を上昇させて挟持機構を解放状態にする。次に、図１７（ｃ）に示すように、解放状態（非挟持状態）のまま基板保持ユニット２１０を第２アライメントを行う位置まで下降させた後、図１７（ｄ）に示すように、挟持機構により基板１０の周縁部を再挟持する。なお、第２アライメントを行う位置とは、基板１０とマスク２２０との相対ズレを計測するために基板１０をマスク２２０上に仮置きした状態となる位置であり、例えば、支持具３００の支持面（上面）がマスク２２０の載置面よりも少し高い位置である。このとき、基板１０の中央部はマスク２２０に接触し、基板１０の周縁部のうち挟持機構により支持されている左右の辺部はマスク２２０の載置面からやや離れた（浮いた）状態となる。 When the first alignment process is completed, the substrate 10 is lowered as shown in FIG. Then, as shown in FIG. 17B, before the substrate 10 contacts the mask 220, the pressing tool 302 is raised to release the clamping mechanism. Next, as shown in FIG. 17C, after the substrate holding unit 210 is lowered to the position where the second alignment is performed in the released state (non-clamping state), the substrate is held as shown in FIG. The peripheral portion of the substrate 10 is re-clamped by the mechanism. Note that the position where the second alignment is performed is a position where the substrate 10 is temporarily placed on the mask 220 in order to measure the relative displacement between the substrate 10 and the mask 220, for example, the support surface of the support 300. The (upper surface) is a position slightly higher than the mounting surface of the mask 220. At this time, the central portion of the substrate 10 is in contact with the mask 220, and the left and right side portions of the peripheral portion of the substrate 10 that are supported by the clamping mechanism are slightly separated (floated) from the mounting surface of the mask 220. Become.
　本実施例では、図１７（ｂ）～図１７（ｄ）のように、基板保持ユニット２１０が解放状態のまま基板１０をマスク２２０へと近づけていく。そして、基板１０がマスク２２０に接触し、さらに基板２とマスク１の接触面積が接触開始時点よりも増えた時点で、基板１０の周縁部を挟持する。したがって、自重で撓んでいた基板１０がマスク２２０に倣って平らに戻る際に、基板１０の周縁部が外側に逃げるので、基板１０に余計な応力がかからない。よって、基板１０とマスク２２０の密着性が増すとともに、基板１０をマスク２２０上に載せていく際に基板１０の位置がズレたり、基板１０の表面がマスク２２０と擦れたりすることを抑制できる。 In this embodiment, as shown in FIGS. 17B to 17D, the substrate 10 is moved closer to the mask 220 while the substrate holding unit 210 is released. When the substrate 10 comes into contact with the mask 220 and the contact area between the substrate 2 and the mask 1 further increases from the contact start time, the peripheral portion of the substrate 10 is sandwiched. Therefore, when the substrate 10 that has been bent by its own weight returns to a flat shape following the mask 220, the peripheral edge of the substrate 10 escapes to the outside, so that no extra stress is applied to the substrate 10. Therefore, the adhesion between the substrate 10 and the mask 220 can be increased, and the position of the substrate 10 can be prevented from being displaced or the surface of the substrate 10 can be prevented from rubbing against the mask 220 when the substrate 10 is placed on the mask 220.
　図１８（ａ）から図１８（ｄ）は第２アライメントを説明する図である。第２アライメントは、高精度な位置合わせを行うアライメント処理であり、「ファインアライメント」とも称される。まず、図１８（ａ）に示すように、カメラ２６１によって基板１０に設けられた基板アライメントマーク１０１とマスク２２０に設けられたマスクアライメントマーク（不図示）を認識し、各々のＸＹ位置やＸＹ面内での相対ズレを計測する。カメラ２６１は、高精度な位置合わせができるように、狭視野だが高解像なカメラである。計測されたズレが閾値を超える場合には、位置合わせ処理が行われる。以下では、計測されたズレが閾値を超える場合について説明する。 18 (a) to 18 (d) are diagrams for explaining the second alignment. The second alignment is an alignment process that performs highly accurate alignment, and is also referred to as “fine alignment”. First, as shown in FIG. 18A, the camera alignment of the substrate alignment mark 101 provided on the substrate 10 and the mask alignment mark (not shown) provided on the mask 220 is recognized by the camera 261, and the respective XY positions and XY planes are recognized. Measure the relative displacement within. The camera 261 is a narrow-field but high-resolution camera so that high-precision positioning can be performed. When the measured deviation exceeds the threshold value, alignment processing is performed. Hereinafter, a case where the measured deviation exceeds the threshold will be described.
　計測されたズレが閾値を超える場合には、図１８（ｂ）に示すように、基板Ｚアクチュエータ２５０を駆動して、基板１０を上昇させてマスク２２０から離す。図１８（ｃ）では、カメラ２６１によって計測されたズレに基づいてＸＹθアクチュエータを駆動して、位置合わせを行う。位置合わせの際には、基板１０（基板保持ユニット２１０）の位置を調整してもよいし、マスク２２０の位置を調整してもよいし、基板１０とマスク２２０の両者の位置を調整してもよい。 When the measured deviation exceeds the threshold value, the substrate Z actuator 250 is driven to raise the substrate 10 away from the mask 220 as shown in FIG. In FIG. 18C, the XYθ actuator is driven based on the deviation measured by the camera 261 to perform alignment. At the time of alignment, the position of the substrate 10 (substrate holding unit 210) may be adjusted, the position of the mask 220 may be adjusted, or the positions of both the substrate 10 and the mask 220 may be adjusted. Also good.
　その後、図１８（ｄ）に示すように再び基板１０を第２アライメントを行う位置まで下降させて、基板１０をマスク２２０上に再び載置する。そして、カメラ２６１によって基板１０およびマスク２２０のアライメントマークの撮影を行い、ズレを計測する。計測されたズレが閾値を超える場合には、上述した位置合わせ処理が繰り返される。 Thereafter, as shown in FIG. 18D, the substrate 10 is lowered again to the position where the second alignment is performed, and the substrate 10 is placed on the mask 220 again. Then, the camera 261 photographs the alignment marks on the substrate 10 and the mask 220, and measures the deviation. When the measured deviation exceeds the threshold value, the above-described alignment process is repeated.
　ズレが閾値以内になった場合には、図１９（ａ）～図１９（ｂ）に示すように、基板１０を挟持したまま基板保持ユニット２１０を下降させ、基板保持ユニット２１０の支持面とマスク２２０の高さを一致させる。これにより、基板１０の全体がマスク２２０上に載置される。その後、冷却板Ｚアクチュエータ２５２を駆動して、冷却板２３０を下降させて基板１０に密着させる。以上の工程により、マスク２２０上への基板１０の載置処理が完了し、成膜装置による成膜処理（蒸着処理）が行われる。 When the deviation is within the threshold value, as shown in FIGS. 19A to 19B, the substrate holding unit 210 is lowered while the substrate 10 is held, and the support surface of the substrate holding unit 210 and the mask The height of 220 is matched. As a result, the entire substrate 10 is placed on the mask 220. Thereafter, the cooling plate Z actuator 252 is driven, and the cooling plate 230 is lowered to adhere to the substrate 10. Through the above steps, the placement process of the substrate 10 on the mask 220 is completed, and the film formation process (evaporation process) by the film formation apparatus is performed.
　（第２アライメント処理の変形例）
　本実施例では、図１８（ａ）～図１８（ｄ）に示すように、挟持機構により基板１０を挟持したまま第２アライメントを繰り返す例を説明したが、別例として、基板１０をマスク２２０上に載置する際に挟持機構を解放状態にしたり、挟持機構の挟力を弱めたり（挟持を緩めたり）してもよい。具体的な動作例を図２７～図３０に示す。なお、以下の説明では、図における右側の辺部を支持する挟持機構を右側挟持機構、左側の辺部を支持する挟持機構を左側挟持機構と呼ぶ。 (Modification of second alignment process)
In this embodiment, as shown in FIGS. 18A to 18D, the example in which the second alignment is repeated while the substrate 10 is sandwiched by the sandwiching mechanism has been described. However, as another example, the substrate 10 is masked by the mask 220. The holding mechanism may be released when it is placed on top, or the holding force of the holding mechanism may be weakened (the holding may be loosened). Specific operation examples are shown in FIGS. In the following description, the clamping mechanism that supports the right side portion in the drawing is referred to as the right side clamping mechanism, and the clamping mechanism that supports the left side portion is referred to as the left side clamping mechanism.
　図２７は、左右両側の挟持機構を解放した状態で基板１０をマスク２２０上に載置する動作例を示す。図２７（ａ）～図２７（ｃ）までの動作は図１８（ａ）～図１８（ｃ）と同じである。図２７（ｃ）において基板１０の位置調整が終わると、図２７（ｄ）に示すように、押圧具３０２を上昇させて左右両側の挟持機構を解放状態（挟力＝０の状態）にする。その後、図２７（ｅ）に示すように、解放状態のまま基板１０を第２アライメントを行う位置まで下降させ、基板１０をマスク２２０の上に再載置する。そして、カメラ２６１によって基板１０およびマスク２２０のアライメントマークの撮影を行い、ズレを計測する。計測されたズレが閾値を超える場合には、左右両側の挟持機構を挟持状態とした後、図２７（ｂ）～図２７（ｅ）の処理が繰り返される。一方、ズレが閾値以内になった場合には、第２アライメントを終了し、次の動作（図１９または図２１または図２２）に移行する。 FIG. 27 shows an operation example in which the substrate 10 is placed on the mask 220 in a state where the right and left clamping mechanisms are released. The operations from FIG. 27 (a) to FIG. 27 (c) are the same as FIG. 18 (a) to FIG. 18 (c). When the position adjustment of the substrate 10 is finished in FIG. 27 (c), as shown in FIG. 27 (d), the pressing tool 302 is raised to bring the right and left side clamping mechanisms into the released state (the state where the clamping force = 0). . After that, as shown in FIG. 27E, the substrate 10 is lowered to the position where the second alignment is performed in the released state, and the substrate 10 is placed on the mask 220 again. Then, the camera 261 photographs the alignment marks on the substrate 10 and the mask 220, and measures the deviation. When the measured deviation exceeds the threshold value, the holding mechanisms on both the left and right sides are put in the holding state, and then the processes of FIGS. 27B to 27E are repeated. On the other hand, when the deviation is within the threshold value, the second alignment is terminated and the next operation (FIG. 19, FIG. 21 or FIG. 22) is started.
　図２８は、片側の挟持機構のみを解放した状態で基板１０をマスク２２０上に載置する動作例を示す。図２８（ａ）～図２８（ｃ）までの動作は図１８（ａ）～図１８（ｃ）と同じである。図２８（ｃ）において基板１０の位置調整が終わると、図２８（ｄ）に示すように、片側（図示の例では右側）の押圧具３０２のみを上昇させて、右側の挟持機構のみを解放状態（挟力＝０の状態）にする。左側の挟持機構は基板１０の左辺部を挟持した状態のままである。その後、図２８（ｅ）に示すように、基板１０の片側のみ挟持した状態のまま基板１０を第２アライメントを行う位置まで下降させ、基板１０をマスク２２０の上に再載置する。その後の処理は図２７の動作例と同じである。 FIG. 28 shows an operation example in which the substrate 10 is placed on the mask 220 in a state where only one of the clamping mechanisms is released. The operations from FIG. 28 (a) to FIG. 28 (c) are the same as FIG. 18 (a) to FIG. 18 (c). When the position adjustment of the substrate 10 is finished in FIG. 28 (c), as shown in FIG. 28 (d), only the pressing tool 302 on one side (right side in the illustrated example) is raised, and only the right clamping mechanism is released. The state is set (the state where the clamping force = 0). The holding mechanism on the left side still holds the left side portion of the substrate 10. Thereafter, as shown in FIG. 28 (e), the substrate 10 is lowered to a position where the second alignment is performed while only one side of the substrate 10 is sandwiched, and the substrate 10 is remounted on the mask 220. The subsequent processing is the same as the operation example of FIG.
　図２９は、一方の挟持機構の挟力を他方の挟持機構の挟力よりも弱くした状態で基板１０をマスク２２０上に載置する動作例を示す。図２９（ａ）～図２９（ｃ）までの動作は図１８（ａ）～図１８（ｃ）と同じである。図２９（ｃ）において基板１０の位置調整が終わると、図２９（ｄ）に示すように、片側（図示の例では右側）の押圧具３０２の押圧力を弱め、右側の挟持機構の挟力を通常時（例えば１７（ｄ）のとき）の挟力よりも弱くする。左側の挟持機構の挟力は通常時のままである。図中の白抜き矢印は挟力の強さを模式的に表している。例えば、通常時の挟力は、基板１０に水平方向の力が作用した場合でも、挟持機構による基板１０の挟持位置が容易にズレない程度の強さが好ましい。一方、図２９（ｄ）の場合の右側挟持機構の挟力は、基板１０に水平方向の力が作用した場合に、基板１０の挟持位置が比較的容易にズレる程度の強さが好ましい。その後、図２９（ｅ）に示すように、片側の挟力を弱めた状態のまま基板１０を第２アライメントを行う位置まで下降させ、基板１０をマスク２２０の上に再載置する。その後の処理は図２７の動作例と同じである。 FIG. 29 shows an operation example in which the substrate 10 is placed on the mask 220 in a state where the clamping force of one clamping mechanism is weaker than the clamping force of the other clamping mechanism. The operations from FIG. 29 (a) to FIG. 29 (c) are the same as FIG. 18 (a) to FIG. 18 (c). When the position adjustment of the substrate 10 is finished in FIG. 29C, as shown in FIG. 29D, the pressing force of the pressing tool 302 on one side (right side in the illustrated example) is weakened, and the clamping force of the right clamping mechanism is reduced. Is made weaker than the pinching force at the normal time (for example, at 17 (d)). The clamping force of the left clamping mechanism remains normal. The white arrow in the figure schematically represents the strength of the pinching force. For example, the normal clamping force is preferably strong enough that the clamping position of the substrate 10 by the clamping mechanism is not easily shifted even when a horizontal force is applied to the substrate 10. On the other hand, the clamping force of the right clamping mechanism in the case of FIG. 29D is preferably strong enough to cause the clamping position of the substrate 10 to shift relatively easily when a horizontal force is applied to the substrate 10. Thereafter, as shown in FIG. 29 (e), the substrate 10 is lowered to the position where the second alignment is performed while the clamping force on one side is weakened, and the substrate 10 is remounted on the mask 220. The subsequent processing is the same as the operation example of FIG.
　図３０は、左右両側の挟持機構の挟力を通常時よりも弱くした状態で基板１０をマスク２２０上に載置する動作例を示す。図３０（ａ）～図３０（ｃ）までの動作は図１８（ａ）～図１８（ｃ）と同じである。図３０（ｃ）において基板１０の位置調整が終わると、図３０（ｄ）に示すように、押圧具３０２の押圧力を弱め、左右両側の挟持機構の挟力を通常時（例えば１７（ｄ）のとき）の挟力よりも弱くする。図３０（ｄ）の場合の挟力は、基板１０に水平方向の力が作用した場合に、挟持機構による基板１０の挟持位置が比較的容易にズレる程度の強さが好ましい。その後、図３０（ｅ）に示すように、挟力を弱めた状態のまま基板１０を第２アライメントを行う位置まで下降させ、基板１０をマスク２２０の上に再載置する。その後の処理は図２７の動作例と同じである。 FIG. 30 shows an operation example in which the substrate 10 is placed on the mask 220 in a state where the clamping force of the clamping mechanisms on both the left and right sides is weaker than normal. The operations from FIG. 30A to FIG. 30C are the same as those in FIG. 18A to FIG. When the position adjustment of the substrate 10 is finished in FIG. 30 (c), as shown in FIG. 30 (d), the pressing force of the pressing tool 302 is weakened, and the clamping force of the clamping mechanisms on both the left and right sides is normal (for example, 17 (d) ) Is weaker than the pinching force of). The sandwiching force in the case of FIG. 30D is preferably strong enough that the sandwiching position of the substrate 10 by the sandwiching mechanism is relatively easily displaced when a horizontal force is applied to the substrate 10. Thereafter, as shown in FIG. 30E, the substrate 10 is lowered to a position where the second alignment is performed while the clamping force is weakened, and the substrate 10 is remounted on the mask 220. The subsequent processing is the same as the operation example of FIG.
　図２７～図３０に例示したように、挟持機構を解放状態とするか、又は、挟力を通常時よりも弱くした状態で、基板１０をマスク２２０上に再載置することにより、基板１０の撓みがマスク２２０の載置面に倣って伸びる際に、基板１０の周縁部が外側に逃げるので、基板１０に余計な応力がかからない。よって、基板１０とマスク２２０の密着性が増すとともに、基板１０をマスク２２０上に載せていく際に基板１０の位置がズレたり、基板１０の表面がマスク２２０と擦れたりすることを抑制できる。その結果、第２アライメントの位置合わせ精度の向上を図ることができる。 As shown in FIGS. 27 to 30, the substrate 10 is remounted on the mask 220 in a state in which the clamping mechanism is in the released state or the clamping force is weaker than normal. Since the peripheral edge of the substrate 10 escapes to the outside when the bending of the substrate 10 extends along the mounting surface of the mask 220, no extra stress is applied to the substrate 10. Therefore, the adhesion between the substrate 10 and the mask 220 can be increased, and the position of the substrate 10 can be prevented from being displaced or the surface of the substrate 10 can be prevented from rubbing against the mask 220 when the substrate 10 is placed on the mask 220. As a result, it is possible to improve the alignment accuracy of the second alignment.
　なお、図２７～図３０では、基板１０の位置調整を行った後、基板１０の下降を開始する前に、挟持を解放し又は弱める制御を行った。しかし、基板１０がマスク２２０に接触して基板１０の撓みが伸びはじめるより前に、挟持を解放し又は弱める制御を行えば上述した作用効果が得られるので、例えば、基板１０の位置調整を行う前、あるいは、基板１０の下降を開始した後（ただし、基板１０がマスク２２０に接触するより前）に、挟持を解放し又は弱めてもよい。 In FIG. 27 to FIG. 30, after the position adjustment of the substrate 10 is performed, before the descent of the substrate 10 is started, the clamping is released or weakened. However, if the clamping is released or weakened before the substrate 10 comes into contact with the mask 220 and the deflection of the substrate 10 starts to be extended, the above-described effects can be obtained. For example, the position of the substrate 10 is adjusted. The clamping may be released or weakened before or after the substrate 10 starts to descend (but before the substrate 10 contacts the mask 220).
　＜実施例４＞
　本発明の実施例４に係る基板載置方法を、図２０に基づいて説明する。図２０は、実施例３にて説明した第１アライメントの後、基板１０を第２アライメントの位置まで搬送する処理を示している。 <Example 4>
A substrate mounting method according to Embodiment 4 of the present invention will be described with reference to FIG. FIG. 20 shows a process of transporting the substrate 10 to the second alignment position after the first alignment described in the third embodiment.
　図１６（ａ）～図１６（ｃ）において第１アライメント処理が完了したら、図２０（ａ）に示すように基板１０を下降させる。そして、図２０（ｂ）に示すように、基板１０の一部（例えば自重で撓んだ基板１０の中央部）がマスク２２０に接触した後で、押圧具３０２を上昇させて挟持機構を解放状態にする。次に、図２０（ｃ）に示すように、解放状態（非挟持状態）のまま基板保持ユニット２１０を第２アライメントを行う位置まで下降させた後、図２０（ｄ）に示すように、挟持機構により基板１０の周縁部を再挟持する。その後の処理は実施例３と同じである。 16A to 16C, when the first alignment process is completed, the substrate 10 is lowered as shown in FIG. Then, as shown in FIG. 20B, after a part of the substrate 10 (for example, the central portion of the substrate 10 bent by its own weight) contacts the mask 220, the pressing tool 302 is raised to release the clamping mechanism. Put it in a state. Next, as shown in FIG. 20C, after the substrate holding unit 210 is lowered to the position where the second alignment is performed in the released state (non-clamping state), the substrate is held as shown in FIG. The peripheral portion of the substrate 10 is re-clamped by the mechanism. The subsequent processing is the same as in the third embodiment.
　本実施例では、図２０（ａ）のように、基板１０がマスク２２０に接触するまでは挟持機構により基板１０を挟持した状態で基板１０を降下させる。したがって基板１０をマスク２０に近づける過程での基板１０の位置ズレを防止できるという利点がある。また、本実施例では、図２０（ｂ）～図２０（ｄ）のように、基板１０がマスク２２０に接触した時点で挟持機構を解放状態とし、解放状態のまま基板１０をマスク２２０上に載置していく。したがって、自重で撓んでいた基板１０がマスク２２０に倣って平らに戻る際に、基板１０の周縁部が外側に逃げるので、基板１０に余計な応力がかからない。よって、基板１０とマスク２２０の密着性が増すとともに、基板１０をマスク２２０上に載せていく際に基板１０の位置がズレたり、基板１０の表面がマスク２２０と擦れたりすることを抑制できる。 In this embodiment, as shown in FIG. 20A, the substrate 10 is lowered while the substrate 10 is held by the holding mechanism until the substrate 10 contacts the mask 220. Therefore, there is an advantage that positional deviation of the substrate 10 in the process of bringing the substrate 10 close to the mask 20 can be prevented. In this embodiment, as shown in FIGS. 20B to 20D, when the substrate 10 comes into contact with the mask 220, the clamping mechanism is released, and the substrate 10 is placed on the mask 220 in the released state. Place it. Therefore, when the substrate 10 that has been bent by its own weight returns to a flat shape following the mask 220, the peripheral edge of the substrate 10 escapes to the outside, so that no extra stress is applied to the substrate 10. Therefore, the adhesion between the substrate 10 and the mask 220 can be increased, and the position of the substrate 10 can be prevented from being displaced or the surface of the substrate 10 can be prevented from rubbing against the mask 220 when the substrate 10 is placed on the mask 220.
　＜実施例５＞
　本発明の実施例５に係る基板載置方法を、図２１に基づいて説明する。図２１は、実施例３にて説明した第２アライメントの後、基板１０の全面をマスク２２０に密着させる処理を示している。 <Example 5>
A substrate mounting method according to Embodiment 5 of the present invention will be described with reference to FIG. FIG. 21 shows a process of bringing the entire surface of the substrate 10 into close contact with the mask 220 after the second alignment described in the third embodiment.
　図１８（ａ）～図１８（ｄ）において第２アライメント処理が完了したら、図２１（ａ）に示すように挟持機構を再び解放状態にする。そして、図２１（ｂ）に示すように基板保持ユニット２１０を下降させ、基板保持ユニット２１０の支持面とマスク２２０の高さが一致した状態で再び挟持状態にする。その後の処理は他の実施例と同じである。本実施例の方法によれば、第２アライメント後に生じる基板１０の位置ズレを抑えることができる。なお、図２７（ｅ）のように第２アライメント処理の完了時点で挟持機構が解放状態になっている場合には、図２１（ａ）の動作は省略することができる。 18 (a) to 18 (d), when the second alignment process is completed, the holding mechanism is again released as shown in FIG. 21 (a). Then, as shown in FIG. 21B, the substrate holding unit 210 is lowered, and is again held in a state where the support surface of the substrate holding unit 210 and the height of the mask 220 coincide. The subsequent processing is the same as in the other embodiments. According to the method of the present embodiment, it is possible to suppress the positional deviation of the substrate 10 that occurs after the second alignment. Note that the operation of FIG. 21A can be omitted when the clamping mechanism is in the released state when the second alignment process is completed as shown in FIG.
　＜実施例６＞
　本発明の実施例６に係る基板載置方法を、図２２に基づいて説明する。図２２は、実施例３にて説明した第２アライメントの後、基板１０の全面をマスク２２０に密着させる処理を示している。 <Example 6>
A substrate mounting method according to Embodiment 6 of the present invention will be described with reference to FIG. FIG. 22 shows a process of bringing the entire surface of the substrate 10 into close contact with the mask 220 after the second alignment described in the third embodiment.
　図１８（ａ）～図１８（ｄ）において第２アライメント処理が完了したら、図２２（ａ）に示すように挟持機構を再び解放状態にする。そして、図２２（ｂ）に示すように基板保持ユニット２１０を下降させ、基板保持ユニット２１０の支持面とマスク２２０の高さを一致させる。これにより、基板１０の全体がマスク２２０上に載置される。その後、冷却板Ｚアクチュエータ２５２を駆動して、冷却板２３０を下降させて基板１０に密着させる。以降の処理は他の実施例と同じである。なお、図２７（ｅ）のように第２アライメント処理の完了時点で挟持機構が解放状態になっている場合には、図２２（ａ）の動作は省略することができる。 18 (a) to 18 (d), when the second alignment process is completed, the clamping mechanism is again released as shown in FIG. 22 (a). Then, as shown in FIG. 22B, the substrate holding unit 210 is lowered so that the support surface of the substrate holding unit 210 and the height of the mask 220 coincide with each other. As a result, the entire substrate 10 is placed on the mask 220. Thereafter, the cooling plate Z actuator 252 is driven, and the cooling plate 230 is lowered to adhere to the substrate 10. The subsequent processing is the same as in the other embodiments. In addition, when the clamping mechanism is in the released state at the time when the second alignment process is completed as shown in FIG. 27E, the operation of FIG. 22A can be omitted.
　本実施例の方法は、第２アライメント処理後、挟持機構を解放状態としたまま、基板１０の下降（載置）、冷却板２３０の下降、冷却板２３０による基板１０の固定、の一連の処理を行う点が実施例５と異なる。本実施例の方法でも、実施例５と同様、第２アライメント後に生じる基板１０の位置ズレを抑えることができる。 In the method of this embodiment, after the second alignment process, the substrate 10 is lowered (placed), the cooling plate 230 is lowered, and the substrate 10 is fixed by the cooling plate 230 while the clamping mechanism is in the released state. This is different from the fifth embodiment. In the method of the present embodiment, as in the fifth embodiment, the positional deviation of the substrate 10 that occurs after the second alignment can be suppressed.
　＜電子デバイスの製造方法の実施例＞
　次に、本実施形態の成膜装置を用いた電子デバイスの製造方法の一例を説明する。以下、電子デバイスの例として有機ＥＬ表示装置の構成及び製造方法を例示する。 <Example of Manufacturing Method of Electronic Device>
Next, an example of an electronic device manufacturing method using the film forming apparatus of the present embodiment will be described. Hereinafter, as an example of an electronic device, a configuration and a manufacturing method of an organic EL display device are illustrated.
　まず、製造する有機ＥＬ表示装置について説明する。図２６（ａ）は有機ＥＬ表示装置６０の全体図、図２６（ｂ）は１画素の断面構造を表している。 First, an organic EL display device to be manufactured will be described. FIG. 26A shows an overall view of the organic EL display device 60, and FIG. 26B shows a cross-sectional structure of one pixel.
　図２６（ａ）に示すように、有機ＥＬ表示装置６０の表示領域６１には、発光素子を複数備える画素６２がマトリクス状に複数配置されている。詳細は後で説明するが、発光素子のそれぞれは、一対の電極に挟まれた有機層を備えた構造を有している。なお、ここでいう画素とは、表示領域６１において所望の色の表示を可能とする最小単位を指している。本実施例にかかる有機ＥＬ表示装置の場合、互いに異なる発光を示す第１発光素子６２Ｒ、第２発光素子６２Ｇ、第３発光素子６２Ｂの組合せにより画素６２が構成されている。画素６２は、赤色発光素子と緑色発光素子と青色発光素子の組合せで構成されることが多いが、黄色発光素子とシアン発光素子と白色発光素子の組み合わせでもよく、少なくとも１色以上であれば特に制限されるものではない。 As shown in FIG. 26A, in the display area 61 of the organic EL display device 60, a plurality of pixels 62 each including a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Here, the pixel refers to a minimum unit that enables display of a desired color in the display area 61. In the case of the organic EL display device according to this example, the pixel 62 is configured by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit different light. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element. It is not limited.
　図２６（ｂ）は、図２６（ａ）のＡ－Ｂ線における部分断面模式図である。画素６２は、基板６３上に、第１電極（陽極）６４と、正孔輸送層６５と、発光層６６Ｒ，６６Ｇ，６６Ｂのいずれかと、電子輸送層６７と、第２電極（陰極）６８と、を備える有機ＥＬ素子を有している。これらのうち、正孔輸送層６５、発光層６６Ｒ，６６Ｇ，６６Ｂ、電子輸送層６７が有機層に当たる。また、本実施形態では、発光層６６Ｒは赤色を発する有機ＥＬ層、発光層６６Ｇは緑色を発する有機ＥＬ層、発光層６６Ｂは青色を発する有機ＥＬ層である。発光層６６Ｒ，６６Ｇ，６６Ｂは、それぞれ赤色、緑色、青色を発する発光素子（有機ＥＬ素子と記述する場合もある）に対応するパターンに形成されている。また、第１電極６４は、発光素子ごとに分離して形成されている。正孔輸送層６５と電子輸送層６７と第２電極６８は、複数の発光素子６２Ｒ、６２Ｇ、６２Ｂと共通で形成されていてもよいし、発光素子毎に形成されていてもよい。なお、第１電極６４と第２電極６８とが異物によってショートするのを防ぐために、第１電極６４間に絶縁層６９が設けられている。さらに、有機ＥＬ層は水分や酸素によって劣化するため、水分や酸素から有機ＥＬ素子を保護するための保護層７０が設けられている。 FIG. 26B is a partial schematic cross-sectional view taken along the line AB in FIG. The pixel 62 includes a first electrode (anode) 64, a hole transport layer 65, one of the light emitting layers 66 </ b> R, 66 </ b> G, and 66 </ b> B, an electron transport layer 67, and a second electrode (cathode) 68 on a substrate 63. And an organic EL element. Among these, the hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to the organic layer. In the present embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light emitting elements that emit red, green, and blue (sometimes referred to as organic EL elements). The first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. Note that an insulating layer 69 is provided between the first electrodes 64 in order to prevent the first electrode 64 and the second electrode 68 from being short-circuited by foreign matter. Furthermore, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.
　有機ＥＬ層を発光素子単位に形成するためには、マスクを介して成膜する方法が用いられる。近年、表示装置の高精細化が進んでおり、有機ＥＬ層の形成には開口の幅が数十μｍのマスクが用いられる。このようなマスクを用いた成膜の場合、マスクが成膜中に蒸発源から受熱して熱変形するとマスクと基板との位置がずれてしまい、基板上に形成される薄膜のパターンが所望の位置からずれて形成されてしまう。そこで、これら有機ＥＬ層の成膜には本発明にかかる成膜装置（真空蒸着装置）が好適に用いられる。 In order to form the organic EL layer in units of light emitting elements, a method of forming a film through a mask is used. In recent years, display devices have been improved in definition, and a mask having an opening width of several tens of μm is used for forming an organic EL layer. In the case of film formation using such a mask, if the mask receives heat from the evaporation source during film formation and is thermally deformed, the position of the mask and the substrate is shifted, and the pattern of the thin film formed on the substrate is desired. It will be formed out of position. Therefore, a film forming apparatus (vacuum evaporation apparatus) according to the present invention is suitably used for forming these organic EL layers.
　次に、有機ＥＬ表示装置の製造方法の例について具体的に説明する。 Next, an example of a method for manufacturing an organic EL display device will be specifically described.
　まず、有機ＥＬ表示装置を駆動するための回路（不図示）および第１電極６４が形成された基板６３を準備する。 First, a circuit (not shown) for driving the organic EL display device and a substrate 63 on which the first electrode 64 is formed are prepared.
　第１電極６４が形成された基板６３の上にアクリル樹脂をスピンコートで形成し、アクリル樹脂をリソグラフィ法により、第１電極６４が形成された部分に開口が形成されるようにパターニングし絶縁層６９を形成する。この開口部が、発光素子が実際に発光する発光領域に相当する。 An acrylic resin is formed by spin coating on the substrate 63 on which the first electrode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in a portion where the first electrode 64 is formed. 69 is formed. This opening corresponds to a light emitting region where the light emitting element actually emits light.
　絶縁層６９がパターニングされた基板６３を第１の成膜装置に搬入し、基板保持ユニットにて基板を保持し、正孔輸送層６５を、表示領域の第１電極６４の上に共通する層として成膜する。正孔輸送層６５は真空蒸着により成膜される。実際には正孔輸送層６５は表示領域６１よりも大きなサイズに形成されるため、高精細なマスクは不要である。 The substrate 63 patterned with the insulating layer 69 is carried into the first film formation apparatus, the substrate is held by the substrate holding unit, and the hole transport layer 65 is a common layer on the first electrode 64 in the display region. As a film formation. The hole transport layer 65 is formed by vacuum deposition. Actually, since the hole transport layer 65 is formed in a size larger than the display region 61, a high-definition mask is not necessary.
　次に、正孔輸送層６５までが形成された基板６３を第２の成膜装置に搬入し、基板保持ユニットにて保持する。基板とマスクとのアライメントを行い、基板をマスクの上に載置し、基板６３の赤色を発する素子を配置する部分に、赤色を発する発光層６６Ｒを成膜する。本例によれば、マスクと基板とを良好に重ね合わせることができ、高精度な成膜を行うことができる。 Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second film forming apparatus and held by the substrate holding unit. The substrate and the mask are aligned, the substrate is placed on the mask, and the light emitting layer 66R that emits red is formed on the portion of the substrate 63 where the element that emits red is disposed. According to this example, the mask and the substrate can be satisfactorily overlapped, and highly accurate film formation can be performed.
　発光層６６Ｒの成膜と同様に、第３の成膜装置により緑色を発する発光層６６Ｇを成膜し、さらに第４の成膜装置により青色を発する発光層６６Ｂを成膜する。発光層６６Ｒ、６６Ｇ、６６Ｂの成膜が完了した後、第５の成膜装置により表示領域６１の全体に電子輸送層６７を成膜する。電子輸送層６７は、３色の発光層６６Ｒ、６６Ｇ、６６Ｂに共通の層として形成される。 Similarly to the formation of the light emitting layer 66R, a light emitting layer 66G that emits green light is formed by the third film forming apparatus, and a light emitting layer 66B that emits blue light is formed by the fourth film forming apparatus. After the formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display region 61 by the fifth film formation apparatus. The electron transport layer 67 is formed as a layer common to the three-color light emitting layers 66R, 66G, and 66B.
　電子輸送層６５までが形成された基板をスパッタリング装置に移動し、第２電極６８を成膜し、その後プラズマＣＶＤ装置に移動して保護層７０を成膜して、有機ＥＬ表示装置６０が完成する。 The substrate on which the electron transport layer 65 is formed is moved to the sputtering apparatus, the second electrode 68 is formed, and then the protective layer 70 is formed by moving to the plasma CVD apparatus, and the organic EL display device 60 is completed. To do.
　絶縁層６９がパターニングされた基板６３を成膜装置に搬入してから保護層７０の成膜が完了するまでは、水分や酸素を含む雰囲気にさらしてしまうと、有機ＥＬ材料からなる発光層が水分や酸素によって劣化してしまうおそれがある。従って、本例において、成膜装置間の基板の搬入搬出は、真空雰囲気または不活性ガス雰囲気の下で行われる。 From when the substrate 63 with the insulating layer 69 patterned is carried into the film formation apparatus until the film formation of the protective layer 70 is completed, if the light emitting layer made of an organic EL material is exposed to an atmosphere containing moisture or oxygen, There is a risk of deterioration due to moisture and oxygen. Therefore, in this example, the carrying-in / out of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.
　このようにして得られた有機ＥＬ表示装置は、発光素子ごとに発光層が精度よく形成される。従って、上記製造方法を用いれば、発光層の位置ずれに起因する有機ＥＬ表示装置の不良の発生を抑制することができる。 In the organic EL display device thus obtained, a light emitting layer is accurately formed for each light emitting element. Therefore, if the manufacturing method is used, it is possible to suppress the occurrence of defects in the organic EL display device due to the displacement of the light emitting layer.
　なお、上記実施例は本発明の一例を示したものであり、本発明は上記実施例の構成に限られず、その技術思想の範囲内において適宜変形しても構わない。例えば、上記実施例では、基板保持ユニットにより基板を移動させたが、載置体であるマスク、又は、基板とマスクの両方を移動させてもよい。その場合は、基板の移動手段の他に、載置体の移動手段を設ければよい。また、上記実施例では第１アライメントと第２アライメントで計測に用いるカメラを使い分けたが、第１アライメントと第２アライメントに同じカメラを用いてもよいし、第１アライメントと第２アライメントに両方のカメラ２６０、２６１を用いてもよい。 In addition, the said Example shows an example of this invention, This invention is not restricted to the structure of the said Example, You may deform | transform suitably within the range of the technical idea. For example, in the above embodiment, the substrate is moved by the substrate holding unit. However, the mask that is the mounting body or both the substrate and the mask may be moved. In that case, a moving means for the mounting body may be provided in addition to the moving means for the substrate. Moreover, in the said Example, although the camera used for a measurement by 1st alignment and 2nd alignment was used properly, you may use the same camera for 1st alignment and 2nd alignment, and both 1st alignment and 2nd alignment use it. Cameras 260 and 261 may be used.
１，２０：マスク
２，１０：基板
６，２１０：基板保持ユニット
７，３００：支持具
８，３０２：押圧具
６０：有機ＥＬ表示装置 1, 20: Mask 2, 10: Substrate 6, 210: Substrate holding unit 7, 300: Supporting tool 8, 302: Pressing tool 60: Organic EL display device

Claims (32)

  1. 　基板を載置体の上に載置する基板載置方法であって、
    　前記基板を前記載置体の上に載せた状態で、前記基板の周縁部を挟持機構により挟持することを特徴とする基板載置方法。     A substrate mounting method for mounting a substrate on a mounting body,
    A substrate mounting method, wherein a peripheral portion of the substrate is clamped by a clamping mechanism in a state where the substrate is placed on the mounting body.
  2. 　前記基板を前記載置体の上に載せた状態での前記挟持機構による前記基板の前記周縁部の挟持は、
    　前記挟持機構による前記基板の挟持を一度解放した後に、再度行われた挟持であることを特徴とする請求項１に記載の基板載置方法。     The holding of the peripheral portion of the substrate by the holding mechanism in a state where the substrate is placed on the mounting body described above,
    The substrate mounting method according to claim 1, wherein the holding is performed again after releasing the holding of the substrate by the holding mechanism once.
  3. 　基板を載置体の上に載置する基板載置方法であって、
    　前記基板の周縁部を挟持機構により挟持する第１の挟持工程と、
    　前記挟持機構による前記基板の挟持を解放する解放工程と、
    　前記解放工程の後に、前記基板を前記載置体の上に載せた状態で、前記基板の前記周縁部を挟持機構により挟持する第２の挟持工程と、を有することを特徴とする基板載置方法。     A substrate mounting method for mounting a substrate on a mounting body,
    A first clamping step of clamping the peripheral edge of the substrate by a clamping mechanism;
    A releasing step of releasing the holding of the substrate by the holding mechanism;
    And a second clamping step of clamping the peripheral edge portion of the substrate by a clamping mechanism in a state where the substrate is placed on the mounting body after the releasing step. Method.
  4. 　前記基板を前記載置体の上に載せた状態は、前記基板の少なくとも一部が前記載置体と接触している状態であることを特徴とする請求項１～３のいずれか１項に記載の基板載置方法。 The state in which the substrate is placed on the mounting body is a state in which at least a part of the substrate is in contact with the mounting body. The board | substrate mounting method of description.
  5. 　前記基板を前記載置体の上に載せた状態は、
    　前記基板と前記載置体を相対的に近づけていったときに前記基板が前記載置体と接触を開始した接触開始時点の状態、又は、
    　前記基板と前記載置体とが前記接触開始時点よりも近づき、前記基板と前記載置体との接触面積が前記接触開始時点よりも増えた状態、であることを特徴とする請求項１～３のいずれか１項に記載の基板載置方法。     The state where the substrate is placed on the mounting body is as follows:
    The state at the start of contact when the substrate starts contact with the mounting body when the substrate and the mounting body are relatively close to each other, or
    2. The state in which the substrate and the mounting body are closer than the contact start time, and the contact area between the substrate and the mounting body is larger than the contact start time. 4. The substrate mounting method according to any one of 3 above.
  6. 　前記載置体は、所定の開口パターンを有するマスクであることを特徴とする請求項１～５のいずれか１項に記載の基板載置方法。 6. The substrate mounting method according to claim 1, wherein the mounting body is a mask having a predetermined opening pattern.
  7. 　前記第１の挟持工程の後に、前記基板と前記載置体を相対的に近づける工程を有し、
    　前記解放工程は、前記基板が前記載置体と接触する前に行われることを特徴とする請求項３に記載の基板載置方法。     After the first clamping step, the step of relatively bringing the substrate and the mounting body closer together,
    The substrate release method according to claim 3, wherein the releasing step is performed before the substrate contacts the placement body.
  8. 　前記第１の挟持工程の後に、前記基板と前記載置体を相対的に近づける工程を有し、
    　前記解放工程は、前記基板の少なくとも一部が前記載置体と接触した後に行われることを特徴とする請求項３に記載の基板載置方法。     After the first clamping step, the step of relatively bringing the substrate and the mounting body closer together,
    4. The substrate mounting method according to claim 3, wherein the releasing step is performed after at least a part of the substrate comes into contact with the mounting body.
  9. 　前記第１の挟持工程と前記解放工程の間に、前記載置体の表面に平行な方向における、前記基板と前記載置体との相対位置を調整する第１の位置調整工程を有することを特徴とする請求項３、７、８のいずれか１項に記載の基板載置方法。 A first position adjusting step of adjusting a relative position between the substrate and the mounting body in a direction parallel to the surface of the mounting body between the first clamping step and the releasing step; The substrate mounting method according to claim 3, wherein the substrate is placed on the substrate.
  10. 　前記第２の挟持工程の後に、前記載置体の表面に平行な方向における、前記基板と前記載置体との相対位置を調整する第２の位置調整工程を有することを特徴とする請求項３、７～９のいずれか１項に記載の基板載置方法。 The second position adjusting step of adjusting a relative position between the substrate and the mounting body in a direction parallel to the surface of the mounting body after the second clamping step. The substrate mounting method according to any one of 3, 7 to 9.
  11. 　前記第２の位置調整工程は、
    　　前記基板を前記載置体から離間する工程と、
    　　前記載置体の表面に平行な方向における、前記基板と前記載置体との相対位置を調整する工程と、を含むことを特徴とする請求項１０に記載の基板載置方法。     The second position adjustment step includes:
    Separating the substrate from the mounting body;
    The substrate mounting method according to claim 10, further comprising: adjusting a relative position between the substrate and the mounting body in a direction parallel to the surface of the mounting body.
  12. 　前記第２の位置調整工程は、
    　　前記基板が前記載置体に載置された状態で前記基板と前記載置体との相対的なズレを計測する工程と、
    　　前記基板を前記載置体から離間する工程と、
    　　計測された前記相対的なズレに基づき、前記載置体の表面に平行な方向における、前記基板と前記載置体との相対位置を調整する工程と、
    　　相対位置を調整した後に、前記基板を前記載置体の上に再び載置する工程と、を含むことを特徴とする請求項１０に記載の基板載置方法。     The second position adjustment step includes:
    Measuring the relative displacement between the substrate and the mounting body in a state where the substrate is mounted on the mounting body;
    Separating the substrate from the mounting body;
    Adjusting the relative position between the substrate and the mounting body in a direction parallel to the surface of the mounting body based on the measured relative displacement;
    The substrate mounting method according to claim 10, further comprising a step of mounting the substrate again on the mounting body after adjusting the relative position.
  13. 　前記基板を前記載置体の上に再び載置する工程は、前記挟持機構による前記基板の挟持を解放した状態、又は、前記挟持機構の挟力を前記第２の挟持工程における挟力よりも弱くした状態で行われる
    ことを特徴とする請求項１２に記載の基板載置方法。     The step of placing the substrate again on the mounting body is a state in which the clamping of the substrate by the clamping mechanism is released, or the clamping force of the clamping mechanism is more than the clamping force in the second clamping step. The substrate mounting method according to claim 12, wherein the substrate mounting method is performed in a weakened state.
  14. 　前記挟持機構は、前記基板の周縁部のうち対向する２つの辺部をそれぞれ挟持する２つの挟持機構を有しており、
    　前記基板を前記載置体の上に再び載置する工程は、前記２つの挟持機構のうちの一方の挟持機構による前記基板の挟持を解放した状態、又は、前記２つの挟持機構のうちの一方の挟持機構の挟力を他方の挟持機構の挟力よりも弱くした状態で行われる
    ことを特徴とする請求項１２に記載の基板載置方法。     The clamping mechanism has two clamping mechanisms that clamp two opposing sides of the peripheral edge of the substrate,
    The step of placing the substrate again on the mounting body is a state where the holding of the substrate by one of the two holding mechanisms is released, or one of the two holding mechanisms. The substrate mounting method according to claim 12, wherein the substrate holding method is performed in a state where the holding force of the holding mechanism is weaker than the holding force of the other holding mechanism.
  15. 　前記第２の位置調整工程の後、前記基板の全体を前記載置体の上に載置する載置工程と、
    　板部材を前記基板に押し当てることにより前記基板を前記載置体に密着させる密着工程と、をさらに含むことを特徴とする請求項１０～１２のいずれか１項に記載の基板載置方法。     After the second position adjustment step, a placement step of placing the entire substrate on the placement body,
    The substrate placement method according to any one of claims 10 to 12, further comprising an adhesion step of bringing the substrate into close contact with the mounting body by pressing a plate member against the substrate.
  16. 　基板を載置体の上に載置する基板載置方法であって、
    　前記基板の周縁部を挟持機構により挟持する第１の挟持工程と、
    　前記挟持機構による前記基板の挟持を解放する解放工程と、
    　前記基板の全体を前記載置体の上に載置する載置工程と、を有することを特徴とする基板載置方法。     A substrate mounting method for mounting a substrate on a mounting body,
    A first clamping step of clamping the peripheral edge of the substrate by a clamping mechanism;
    A releasing step of releasing the holding of the substrate by the holding mechanism;
    And a mounting step of mounting the entire substrate on the mounting body.
  17. 　前記載置工程の後に、板部材を前記基板に押し当てることにより前記基板を前記載置体に密着させる密着工程をさらに有することを特徴とする請求項１４に記載の基板載置方法。 The substrate mounting method according to claim 14, further comprising a contact step of bringing the substrate into close contact with the mounting body by pressing a plate member against the substrate after the mounting step.
  18. 　前記載置工程は、前記挟持機構による前記基板の挟持を解放した状態で行われることを特徴とする請求項１３～１５のいずれか１項に記載の基板載置方法。 The substrate placing method according to any one of claims 13 to 15, wherein the placing step is performed in a state in which the holding of the substrate by the holding mechanism is released.
  19. 　前記載置工程の後に、前記挟持機構により前記基板の前記周縁部を挟持する工程を含み、
    　前記密着工程では、前記挟持機構により前記基板の前記周縁部が挟持された状態で前記板部材が前記基板に押し当てられることを特徴とする請求項１３又は１５に記載の基板載置方法。     After the placing step, including the step of sandwiching the peripheral portion of the substrate by the sandwiching mechanism,
    The substrate mounting method according to claim 13 or 15, wherein, in the adhesion step, the plate member is pressed against the substrate in a state where the peripheral portion of the substrate is clamped by the clamping mechanism.
  20. 　前記密着工程では、前記挟持機構による前記基板の挟持を解放した状態のまま、前記板部材が前記基板に押し当てられることを特徴とする請求項１３又は１５に記載の基板載置方法。 16. The substrate mounting method according to claim 13, wherein, in the contact step, the plate member is pressed against the substrate while releasing the holding of the substrate by the holding mechanism.
  21. 　基板上に所定パターンの成膜を行う成膜方法であって、
    　請求項１～１８のいずれか１項に記載の基板載置方法により、前記基板を前記載置体の上に載置する工程と、
    　前記基板に成膜を行う工程と、を含むことを特徴とする成膜方法。     A film forming method for forming a predetermined pattern on a substrate,
    A step of placing the substrate on the placing body according to the substrate placing method according to any one of claims 1 to 18;
    And a step of forming a film on the substrate.
  22. 　基板上に形成された有機膜を有する電子デバイスの製造方法であって、
    　請求項１９に記載の成膜方法により前記有機膜が形成されることを特徴とする電子デバイスの製造方法。     A method of manufacturing an electronic device having an organic film formed on a substrate,
    The method of manufacturing an electronic device, wherein the organic film is formed by the film forming method according to claim 19.
  23. 　基板上に形成された金属膜を有する電子デバイスの製造方法であって、
    　請求項１９に記載の成膜方法により前記金属膜が形成されることを特徴とする電子デバイスの製造方法。     A method of manufacturing an electronic device having a metal film formed on a substrate,
    20. The method for manufacturing an electronic device, wherein the metal film is formed by the film forming method according to claim 19.
  24. 　前記電子デバイスが、有機ＥＬ表示装置の表示パネルであることを特徴とする請求項２０又は２１に記載の電子デバイスの製造方法。 The method of manufacturing an electronic device according to claim 20 or 21, wherein the electronic device is a display panel of an organic EL display device.
  25. 　基板を載置体の上に載置する基板載置装置であって、
    　前記基板の周縁部を挟持するための挟持機構を有する基板保持手段と、
    　前記基板保持手段を制御する制御手段と、を有し、
    　前記制御手段は、前記基板を前記載置体の上に載せた状態で、前記挟持機構が前記基板を挟持していない解放状態から前記挟持機構が前記基板を挟持する挟持状態へ移行するよう、前記基板保持手段を制御することを特徴とする基板載置装置。     A substrate mounting device for mounting a substrate on a mounting body,
    Substrate holding means having a clamping mechanism for clamping the peripheral edge of the substrate;
    Control means for controlling the substrate holding means,
    In the state where the substrate is placed on the mounting body, the control means shifts from a released state where the clamping mechanism does not clamp the substrate to a clamping state where the clamping mechanism clamps the substrate. A substrate mounting apparatus that controls the substrate holding means.
  26. 　前記基板を前記載置体の上に載せた状態は、前記基板の少なくとも一部が前記載置体と接触している状態であることを特徴とする請求項２３に記載の基板載置装置。 The substrate mounting apparatus according to claim 23, wherein the state where the substrate is placed on the mounting body is a state where at least a part of the substrate is in contact with the mounting body.
  27. 　前記基板を前記載置体の上に載せた状態は、
    　前記基板と前記載置体を相対的に近づけていったときに前記基板が前記載置体と接触を開始した接触開始時点の状態、又は、
    　前記基板と前記載置体とが前記接触開始時点よりも近づき、前記基板と前記載置体との接触面積が前記接触開始時点よりも増えた状態、であることを特徴とする請求項２３に記載の基板載置装置。     The state where the substrate is placed on the mounting body is as follows:
    The state at the start of contact when the substrate starts contact with the mounting body when the substrate and the mounting body are relatively close to each other, or
    24. The state according to claim 23, wherein the substrate and the mounting body are closer than the contact start time, and a contact area between the substrate and the mounting body is increased from the contact start time. The board | substrate mounting apparatus of description.
  28. 　前記挟持機構は、前記基板を支持するための支持具と、前記基板を前記支持具に押圧するための押圧具とを有することを特徴とする請求項２３～２５のいずれか１項に記載の基板載置装置。 The holding mechanism according to any one of claims 23 to 25, wherein the clamping mechanism includes a support for supporting the substrate and a press for pressing the substrate against the support. Substrate placing device.
  29. 　前記基板保持手段により保持された前記基板、前記載置体、又は、前記基板と前記載置体の両方を移動させるための移動手段を有することを特徴とする請求項２３～２６のいずれか１項に記載の基板載置装置。 27. The apparatus according to claim 23, further comprising a moving unit for moving the substrate held by the substrate holding unit, the mounting body, or both the substrate and the mounting body. The board | substrate mounting apparatus as described in a term.
  30. 　前記載置体の表面に平行な方向における、前記基板と前記載置体との相対位置を調整するための位置調整手段を有することを特徴とする請求項２３～２７のいずれか１項に記載の基板載置装置。 The position adjusting means for adjusting the relative position between the substrate and the mounting body in a direction parallel to the surface of the mounting body is described in any one of claims 23 to 27. Substrate mounting device.
  31. 　前記載置体は、所定の開口パターンを有するマスクであることを特徴とする請求項２３～２８のいずれか１項に記載の基板載置装置。 29. The substrate mounting apparatus according to claim 23, wherein the mounting body is a mask having a predetermined opening pattern.
  32. 　基板上に所定パターンの成膜を行う成膜装置であって、
    　前記基板を載置体の上に載置する、請求項２３～２９のいずれか１項に記載の基板載置装置と、
    　前記基板に成膜を行う手段と、を有することを特徴とする成膜装置。     A film forming apparatus for forming a predetermined pattern on a substrate,
    The substrate mounting apparatus according to any one of claims 23 to 29, wherein the substrate is mounted on a mounting body;
    Means for forming a film on the substrate.
PCT/JP2017/023004 2016-06-24 2017-06-22 Substrate mounting method, film formation method, and method for manufacturing electronic device WO2017222009A1 (en)

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