WO2017219413A1 - 微发光二极管显示面板 - Google Patents

微发光二极管显示面板 Download PDF

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WO2017219413A1
WO2017219413A1 PCT/CN2016/090109 CN2016090109W WO2017219413A1 WO 2017219413 A1 WO2017219413 A1 WO 2017219413A1 CN 2016090109 W CN2016090109 W CN 2016090109W WO 2017219413 A1 WO2017219413 A1 WO 2017219413A1
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Prior art keywords
emitting diode
light emitting
micro light
micro
display panel
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English (en)
French (fr)
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陈黎暄
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/116,214 priority Critical patent/US10244589B2/en
Publication of WO2017219413A1 publication Critical patent/WO2017219413A1/zh
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a micro light emitting diode display panel.
  • Flat display devices are widely used in various consumer electronics such as mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, desktop computers, etc. due to their high image quality, power saving, thin body and wide application range. Products have become the mainstream in display devices.
  • a micro LED ( ⁇ LED) display is a display that realizes image display by using a high-density and small-sized LED array integrated on one substrate as a display pixel.
  • each pixel Addressable, individually driven and lit can be seen as a miniature version of the outdoor LED display, reducing the pixel distance from millimeters to micrometers, and the ⁇ LED display is the same as the Organic Light-Emitting Diode (OLED) display.
  • OLED Organic Light-Emitting Diode
  • Self-illuminating display but compared with OLED display, ⁇ LED display has the advantages of better material stability, longer life, no image imprinting, etc., and is considered to be the biggest competitor of OLED display.
  • Micro Transfer Printing technology is currently the mainstream method for preparing ⁇ LED display devices.
  • the specific preparation process is as follows: First, a micro light-emitting diode is grown on a sapphire-based substrate, and then laser lift-off (LLO) is used to micro-transfer.
  • LLO laser lift-off
  • the LED bare chip is separated from the sapphire substrate, and then a patterned polydimethylsiloxane (PDMS) transfer head is used to adsorb the micro LED bare chip from the sapphire substrate, and The PDMS transfer head is aligned with the receiving substrate, and then the micro light emitting diode bare chip adsorbed by the PDMS transfer head is attached to a preset position on the receiving substrate, and then the PDMS transfer head is peeled off, thereby completing the micro light emitting diode bare chip. Transfer to the receiving substrate to produce a ⁇ LED display device.
  • PDMS polydimethylsiloxane
  • the size of the sub-pixel 100 in the planar display device is relatively large compared to the size of the micro-light emitting diode. If a micro-light emitting diode having a size equivalent to that of the sub-pixel 100 is used as the sub-pixel The light source of the pixel is extremely expensive, and if a micro light emitting diode having a size smaller than the size of the sub-pixel 100 is selected as the light source of each of the sub-pixels 100, the area of the light-emitting region 200 in the sub-pixel 100 is too small. Causes display quality to drop.
  • An object of the present invention is to provide a micro light emitting diode display panel capable of enlarging an area of a light emitting region in a sub-pixel region without increasing the size of the micro light emitting diode, thereby improving display quality and reducing production cost.
  • the present invention provides a micro light emitting diode display panel comprising: a transparent substrate, a plurality of sub-pixel regions arranged in an array on the upper surface of the substrate, and respective sub-pixels disposed on the substrate a micro light emitting diode in a pixel region, a transparent encapsulation layer covering the plurality of micro light emitting diodes, and a reflective lens layer disposed on a lower surface of the substrate;
  • a micro light emitting diode is disposed in each sub-pixel region, and a size of the micro light emitting diode is smaller than a size of the sub-pixel region;
  • the reflective lens layer reflects light emitted by the micro light emitting diode into a sub-pixel region around the periphery of the micro light emitting diode, and enlarges an area of a region where the light is emitted in the sub-pixel region.
  • the reflective lens layer includes a plurality of reflective lens units, and the reflective lens unit has a one-to-one correspondence with the micro light emitting diodes.
  • the shape of the reflective lens unit is a curved surface that is convex toward a side away from the substrate.
  • Scattering particles are further disposed in the encapsulation layer, and the light emitted from the micro-light emitting diode via the encapsulation layer is scattered by the scattering particles.
  • a light scattering lens layer is further disposed on the encapsulation layer, and the light emitted from the micro light emitting diode via the encapsulation layer and the scattering lens layer is scattered by the scattering lens layer.
  • the scattering lens layer includes a plurality of scattering lens units, and the scattering lens unit has a one-to-one correspondence with the micro light emitting diodes.
  • the shape of the scattering lens unit is a curved surface that is convex toward a side away from the substrate.
  • the shape of the scattering lens unit is zigzag.
  • the plurality of micro light emitting diodes include: a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode.
  • the material of the encapsulation layer is: parylene or an organic resin.
  • the present invention also provides a micro light emitting diode display panel, comprising: a transparent substrate, a plurality of sub-pixel regions arranged in an array on the upper surface of the substrate, and micro-dimension regions disposed on the substrate a light emitting diode, a transparent encapsulation layer covering the plurality of micro light emitting diodes, and a reflective lens layer disposed on a lower surface of the substrate;
  • a micro light emitting diode is disposed in each sub-pixel region, and a size of the micro light emitting diode is smaller than a size of the sub-pixel region;
  • the reflective lens layer reflects light emitted by the micro light emitting diode into a sub-pixel region around the periphery of the micro light emitting diode, and enlarges an area of the light emitting region in the sub-pixel region;
  • the reflective lens layer includes: a plurality of reflective lens units, wherein the reflective lens unit has a one-to-one correspondence with the micro light emitting diodes;
  • the plurality of micro light emitting diodes include: a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode;
  • the material of the encapsulation layer is: parylene or an organic resin.
  • the present invention provides a micro light emitting diode display panel in which a micro light emitting diode having a size smaller than a sub-pixel area is disposed in a sub-pixel region of the display panel, and below the micro light emitting diode a reflective lens layer is disposed, and the light irradiated onto the reflective lens layer by the micro light-emitting diode is reflected by the reflective lens layer to the periphery of the original light-emitting area of the micro light-emitting diode, thereby expanding the area of the light-emitting area in the sub-pixel area and improving Display quality and reduce production costs.
  • FIG. 1 is a schematic diagram of a region of a sub-pixel of a conventional micro-light-emitting diode display panel
  • FIG. 2 is a schematic view of a first embodiment of a micro light emitting diode display panel of the present invention
  • FIG. 3 is a schematic view of a second embodiment of a micro light emitting diode display panel of the present invention.
  • FIG. 4 is a schematic view showing a third embodiment of a micro light emitting diode display panel of the present invention.
  • FIG. 5 is a schematic view showing a fourth embodiment of a micro light emitting diode display panel of the present invention.
  • FIG. 6 is a schematic view showing a region of light emission in a sub-pixel region of a micro light emitting diode display panel of the present invention.
  • the present invention provides a micro light emitting diode display panel.
  • the micro light emitting diode display panel includes: a transparent substrate 1 disposed on the a plurality of sub-pixel regions 2 arranged in an array on the upper surface of the substrate 1, a micro light-emitting diode 3 disposed in each of the sub-pixel regions 2 on the substrate 1, and a transparent encapsulation layer covering the plurality of micro-light-emitting diodes 3. 4, and a reflective lens layer 5 disposed on the lower surface of the substrate 1;
  • a micro light emitting diode 3 is disposed in each sub-pixel region 2, and the micro light emitting diode The size of 3 is smaller than the size of the sub-pixel region 2;
  • the reflective lens layer 5 reflects the light emitted by the micro light-emitting diode 3 into the sub-pixel region 2 at the periphery of the micro light-emitting diode 3, and enlarges the area of the light-emitting region in the sub-pixel region 2.
  • the substrate 1 is preferably a glass substrate, and a driving circuit is formed on the substrate 1.
  • the driving circuit is electrically connected to the micro light emitting diode 3, and the micro light emitting diode 3 is controlled to emit light by the driving circuit.
  • the material of the encapsulation layer 4 may be selected from various types of parylene or an organic resin.
  • the plurality of micro light emitting diodes 3 may include micro light emitting diodes of various colors such as a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode.
  • the reflective lens layer 5 includes a plurality of reflective lens units 51, and the reflective lens unit 51 is in one-to-one correspondence with the micro light-emitting diodes 3, that is, below each micro-light-emitting diode 3.
  • a reflective lens unit 51 reflects the light that the micro-light-emitting diode 3 transmits through the substrate 1 to the reflective lens unit 51 through the reflective lens unit 51, and the reflective lens unit 51 reflects the light to the periphery of the micro-light-emitting diode 3
  • the sub-pixel region 2 emits light in a region illuminated by the light reflected by the reflective lens unit 51, thereby further increasing the area of the region in which the sub-pixel region 2 emits light.
  • the shape of the reflective lens unit 51 is a curved surface that is convex toward the side away from the substrate 1.
  • the light in the region of the sub-pixel region after the reflection of the reflective lens layer 5 is greater than half of the total emitted light intensity of the micro-light-emitting diode 3, and the original light-emitting region of the micro-light-emitting diode 3 is provided.
  • the area is a square micrometer, and the area of the light-emitting area that needs to be achieved in the sub-pixel area after reflection by the reflective lens layer 5 is b square micrometer (b is larger than a), and the original light-emitting area of the micro-light-emitting diode 3 passes through.
  • the distance of the light-emitting area having an area of b square micrometers from the micro light-emitting diode 3 is L, L is greater than Or equal to b/a ⁇ 10 ⁇ 5 m and less than or equal to b/a ⁇ 10 ⁇ 2 m, that is, the original light-emitting region of the micro-light-emitting diode 3 is expanded after being reflected by the reflective lens layer 5 .
  • the distance between the light-emitting diode 3 and the micro-light-emitting diode 3 needs to be limited to a reasonable range.
  • FIG. 6 is a schematic diagram of a region of a sub-pixel region in a micro-light-emitting diode display panel according to the present invention. Referring to FIG. 1 and FIG. 6, it can be seen that after the reflection of the reflective lens layer 5, Under the premise that the size of the micro-light-emitting diode 3 is constant, the area of the area illuminated in the sub-pixel area 2 is significantly increased compared to the area of the original light-emitting area, thereby improving the display effect of the micro-light-emitting diode display panel.
  • a scattering unit located above the micro light emitting diode 3 is further added to the first embodiment, and the micro light emitting diode 3 is packaged by the scattering unit.
  • the light emitted from the layer 4 is scattered toward the periphery of the micro-light-emitting diode 3 to enlarge the area of the region where the sub-pixel region 2 emits light.
  • the scattering unit is a scattering particle 41 disposed in the encapsulation layer 4, and the encapsulation layer of the micro-light emitting diode 3 is passed through the scattering particle 41. 4 The emitted light is scattered to enlarge the area of the area illuminated in the sub-pixel area 2.
  • the scattering unit is a scattering lens layer 6 disposed on the encapsulation layer 4, and the scattering lens layer 6 is used to The light emitted from the micro-light-emitting diode 3 via the encapsulation layer 4 and the scattering lens layer 6 is scattered.
  • the scattering lens layer 6 includes a plurality of scattering lens units 61, and the scattering lens unit 61 is in one-to-one correspondence with the micro-light-emitting diodes 3, that is, on the encapsulation layer 4 above each of the micro-light-emitting diodes 3.
  • a scattering lens unit 61 The shape of the scattering lens unit 61 can be correspondingly designed as needed.
  • the shape of the scattering lens unit 61 is a curved surface that is convex toward a side away from the substrate 1.
  • the shape of the scattering lens unit 61 is zigzag.
  • the present invention provides a micro light emitting diode display panel having a micro light emitting diode having a size smaller than that of a sub-pixel region in a sub-pixel region of the micro light emitting diode display panel, and is disposed under the micro light emitting diode.
  • the reflective lens layer reflects the light irradiated onto the reflective lens layer by the micro-light-emitting diode through the reflective lens layer to the periphery of the original light-emitting area of the micro-light-emitting diode, thereby expanding the area of the light-emitting area in the sub-pixel area and improving the display. Quality, reducing production costs.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract

一种微发光二极管显示面板。微发光二极管显示面板的子像素区域（2）内设有尺寸小于子像素区域（2）的尺寸的微发光二极管（3），并在微发光二极管（3）的下方设有反射透镜层（5）。通过反射透镜层（5）将微发光二极管（3）照射到反射透镜层（5）上的光线反射到微发光二极管（3）的原有发光区域的外围，扩大子像素区域（2）中发光区域的面积，提升显示品质，降低生产成本。

Description

微发光二极管显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板。
背景技术
平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。
微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。
微发光二极管的尺寸越小，价格越便宜，同时发光源也越小。然而，请参阅图1，目前平面显示装置中的子像素100的尺寸相对于微发光二极管的尺寸而言都是比较大的，若采用尺寸与子像素100的尺寸相当的微发光二极管作为各个子像素的发光源，则成本极高，而若选择尺寸小于子像素100的尺寸的微发光二极管作为各个子像素100的发光源，又会造成子像素100中发光的区域200的面积太小，进而引起显示品质下降。
发明内容
本发明的目的在于提供一种微发光二极管显示面板，能够在不增加微发光二极管尺寸的前提，扩大子像素区域中发光的区域的面积，提升显示品质，降低生产成本。
为实现上述目的，本发明提供了一种微发光二极管显示面板，包括：透明的基板、设于所述基板上表面上的阵列排布的多个子像素区域、设于所述基板上的各个子像素区域内的微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述基板下表面上的反射透镜层；
每一个子像素区域内设有一个微发光二极管，且所述微发光二极管的尺寸小于所述子像素区域的尺寸；
所述反射透镜层将所述微发光二极管发出的光线反射至所述微发光二极管外围的子像素区域中，扩大所述子像素区域中发光的区域的面积。
所述反射透镜层包括：多个反射透镜单元，所述反射透镜单元与所述微发光二极管一一对应。
所述反射透镜单元的形状为向远离基板一侧凸起的曲面。
所述封装层中还设有散射粒子，通过所述散射粒子对所述微发光二极管的经由封装层射出的光线进行散射。
所述封装层上还设有散射透镜层，通过所述散射透镜层对所述微发光二极管的经由封装层和散射透镜层射出的光线进行散射。
所述散射透镜层包括：多个散射透镜单元，所述散射透镜单元与所述微发光二极管一一对应。
所述散射透镜单元的形状为向远离基板的一侧凸起的曲面。
所述散射透镜单元的形状为锯齿形。
所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。
所述封装层的材料为：聚对二甲苯、或有机树脂。
本发明还提供一种微发光二极管显示面板，包括：透明的基板、设于所述基板上表面上的阵列排布的多个子像素区域、设于所述基板上的各个子像素区域内的微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述基板下表面上的反射透镜层；
每一个子像素区域内设有一个微发光二极管，且所述微发光二极管的尺寸小于所述子像素区域的尺寸；
所述反射透镜层将所述微发光二极管发出的光线反射至所述微发光二极管外围的子像素区域中，扩大所述子像素区域中发光的区域的面积；
其中，所述反射透镜层包括：多个反射透镜单元，所述反射透镜单元与所述微发光二极管一一对应；
其中，所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管；
其中，所述封装层的材料为：聚对二甲苯、或有机树脂。
本发明的有益效果：本发明提供一种微发光二极管显示面板，该微发光二极管显示面板的子像素区域内设有尺寸小于子像素区域的尺寸的微发光二极管，并在该微发光二极管的下方设有反射透镜层，通过反射透镜层将微发光二极管照射到反射透镜层上的光线反射到微发光二极管的原有发光区域的外围，进而扩大所述子像素区域中发光的区域的面积，提升显示品质，降低生产成本。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的微发光二极管显示面板的子像素中发光的区域的示意图；
图2为本发明的微发光二极管显示面板的第一实施例的示意图；
图3为本发明的微发光二极管显示面板的第二实施例的示意图；
图4为本发明的微发光二极管显示面板的第三实施例的示意图；
图5为本发明的微发光二极管显示面板的第四实施例的示意图；
图6为本发明的微发光二极管显示面板的子像素区域中发光的区域的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明提供一种微发光二极管显示面板，如图2所示，在本发明的第一实施例中，所述微发光二极管显示面板包括：透明的基板1、设于所述基板1上表面上的阵列排布的多个子像素区域2、设于所述基板1上的各个子像素区域2内的微发光二极管3、覆盖所述多个微发光二极管3的透明的封装层4、以及设于所述基板1下表面上的反射透镜层5；
每一个子像素区域2内设有一个微发光二极管3，且所述微发光二极管 3的尺寸小于所述子像素区域2的尺寸；
所述反射透镜层5将所述微发光二极管3发出的光线反射至所述微发光二极管3外围的子像素区域2中，扩大所述子像素区域2中发光的区域的面积。
具体地，所述基板1优选玻璃基板，所述基板1上形成有驱动电路，所述驱动电路与所述微发光二极管3电性连接，通过所述驱动电路控制所述微发光二极管3发光。所述封装层4的材料可选择各类型的聚对二甲苯、或有机树脂。所述多个微发光二极管3可以包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管等各种颜色的微发光二极管。
需要说明的是，所述反射透镜层5包括：多个反射透镜单元51，所述反射透镜单元51与所述微发光二极管3一一对应，也即每一个微发光二极管3的下方均设有一个反射透镜单元51，通过该反射透镜单元51反射微发光二极管3透过基板1照射到反射透镜单元51上的光线，所述反射透镜单元51将该光线反射至该微发光二极管3外围的子像素区域2中，进而使得子像素区域2除了设有微发光二极管3的区域发光以外，被反射透镜单元51反射的光线照射的区域也发光，进而扩大子像素区域2的发光的区域的面积。优选地，所述反射透镜单元51的形状为向远离基板1一侧凸起的曲面。
值得一提的是，经过反射透镜层5的反射后子像素区域中发光的区域的光强大于微发光二极管3总发射光强的一半，设所述微发光二极管3的原有的发光区域的面积为a平方微米，而经过反射透镜层5的反射后子像素区域中需要达到的发光的区域的面积为b平方微米(b大于a)，此时微发光二极管3的原有的发光区域经过所述反射透镜层5的反射后扩大到的面积大小为b平方微米的发光的区域时，所述面积大小为b平方微米的发光的区域距离所述微发光二极管3的距离为L，L大于或等于b/a×10-5米且小于或等于b/a×10-2米，也即所述微发光二极管3的原有的发光区域经过所述反射透镜层5的反射后扩大到的需要的发光的区域的面积时，其与所述微发光二极管3之间的距离需要限定在合理的范围内。
进一步地，请参阅图6，图6为本发明的微发光二极管显示面板中子像素区域中发光的区域的示意图，对比图1和图6，可见，经过反射透镜层5的反射作用后，在微发光二极管3的尺寸不变的前提下，子像素区域2中发光的区域的面积相比于原有的发光的区域面积显著增大，从而提升了微发光二极管显示面板的显示效果。
具体地，为了进一步提升子像素区域2中发光的区域的扩大效果，在 本发明的第二至第四实施例中，还在第一实施例的基础上增设了位于所述微发光二极管3的上方的散射单元，通过所述散射单元将所述微发光二极管3经由封装层4射出的光线向所述微发光二极管3的外围进行散射，以扩大所述子像素区域2中发光的区域的面积。
请参阅图3，在本发明的第二实施例中，所述散射单元为设置在所述封装层4中的散射粒子41，通过所述散射粒子41对所述微发光二极管3的经由封装层4射出的光线进行散射，以扩大所述子像素区域2中发光的区域的面积。
请参阅图4和图5，在本发明的第三和第四实施例中，所述散射单元为设置在所述封装层4上的散射透镜层6，通过所述散射透镜层6对所述微发光二极管3的经由封装层4和散射透镜层6射出的光线进行散射。所述散射透镜层6包括：多个散射透镜单元61，所述散射透镜单元61与所述微发光二极管3一一对应，也即每一个微发光二极管3的上方的封装层4上均设有一个散射透镜单元61。所述散射透镜单元61的形状可以根据需要进行相应的设计，例如，在本发明的第三实施例中，所述散射透镜单元61的形状为向远离基板1的一侧凸起的曲面。而在本发明的第四实施例中，所述散射透镜单元61的形状为锯齿形。
综上所述，本发明提供一种微发光二极管显示面板，该微发光二极管显示面板的子像素区域内设有尺寸小于子像素区域的尺寸的微发光二极管，并在该微发光二极管的下方设有反射透镜层，通过反射透镜层将微发光二极管照射到反射透镜层上的光线反射到微发光二极管的原有发光区域的外围，进而扩大所述子像素区域中发光的区域的面积，提升显示品质，降低生产成本。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (17)

  1. 一种微发光二极管显示面板，包括：透明的基板、设于所述基板上表面上的阵列排布的多个子像素区域、设于所述基板上的各个子像素区域内的微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述基板下表面上的反射透镜层；
    每一个子像素区域内设有一个微发光二极管，且所述微发光二极管的尺寸小于所述子像素区域的尺寸；
    所述反射透镜层将所述微发光二极管发出的光线反射至所述微发光二极管外围的子像素区域中，扩大所述子像素区域中发光的区域的面积。
  2. 如权利要求1所述的微发光二极管显示面板，其中，所述反射透镜层包括：多个反射透镜单元，所述反射透镜单元与所述微发光二极管一一对应。
  3. 如权利要求2所述的微发光二极管显示面板，其中，所述反射透镜单元的形状为向远离基板一侧凸起的曲面。
  4. 如权利要求1所述的微发光二极管显示面板，其中，所述封装层中还设有散射粒子，通过所述散射粒子对所述微发光二极管的经由封装层射出的光线进行散射。
  5. 如权利要求1所述的微发光二极管显示面板，其中，所述封装层上还设有散射透镜层，通过所述散射透镜层对所述微发光二极管的经由封装层和散射透镜层射出的光线进行散射。
  6. 如权利要求5所述的微发光二极管显示面板，其中，所述散射透镜层包括：多个散射透镜单元，所述散射透镜单元与所述微发光二极管一一对应。
  7. 如权利要求6所述的微发光二极管显示面板，其中，所述散射透镜单元的形状为向远离基板的一侧凸起的曲面。
  8. 如权利要求6所述的微发光二极管显示面板，其中，所述散射透镜单元的形状为锯齿形。
  9. 如权利要求1所述的微发光二极管显示面板，其中，所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。
  10. 如权利要求1所述的微发光二极管显示面板，其中，所述封装层的材料为：聚对二甲苯、或有机树脂。
  11. 一种微发光二极管显示面板，包括：透明的基板、设于所述基板上表面上的阵列排布的多个子像素区域、设于所述基板上的各个子像素区域内的微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述基板下表面上的反射透镜层；
    每一个子像素区域内设有一个微发光二极管，且所述微发光二极管的尺寸小于所述子像素区域的尺寸；
    所述反射透镜层将所述微发光二极管发出的光线反射至所述微发光二极管外围的子像素区域中，扩大所述子像素区域中发光的区域的面积；
    其中，所述反射透镜层包括：多个反射透镜单元，所述反射透镜单元与所述微发光二极管一一对应；
    其中，所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管；
    其中，所述封装层的材料为：聚对二甲苯、或有机树脂。
  12. 如权利要求11所述的微发光二极管显示面板，其中，所述反射透镜单元的形状为向远离基板一侧凸起的曲面。
  13. 如权利要求11所述的微发光二极管显示面板，其中，所述封装层中还设有散射粒子，通过所述散射粒子对所述微发光二极管的经由封装层射出的光线进行散射。
  14. 如权利要求11所述的微发光二极管显示面板，其中，所述封装层上还设有散射透镜层，通过所述散射透镜层对所述微发光二极管的经由封装层和散射透镜层射出的光线进行散射。
  15. 如权利要求14所述的微发光二极管显示面板，其中，所述散射透镜层包括：多个散射透镜单元，所述散射透镜单元与所述微发光二极管一一对应。
  16. 如权利要求15所述的微发光二极管显示面板，其中，所述散射透镜单元的形状为向远离基板的一侧凸起的曲面。
  17. 如权利要求15所述的微发光二极管显示面板，其中，所述散射透镜单元的形状为锯齿形。
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