WO2017217150A1 - Détecteur de pression - Google Patents

Détecteur de pression Download PDF

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Publication number
WO2017217150A1
WO2017217150A1 PCT/JP2017/017876 JP2017017876W WO2017217150A1 WO 2017217150 A1 WO2017217150 A1 WO 2017217150A1 JP 2017017876 W JP2017017876 W JP 2017017876W WO 2017217150 A1 WO2017217150 A1 WO 2017217150A1
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WO
WIPO (PCT)
Prior art keywords
shape
support portion
wall surface
sensor chip
diaphragm
Prior art date
Application number
PCT/JP2017/017876
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English (en)
Japanese (ja)
Inventor
由香利 白旗
Original Assignee
株式会社デンソー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2017024339A external-priority patent/JP2017223643A/ja
Application filed by 株式会社デンソー filed Critical 株式会社デンソー
Publication of WO2017217150A1 publication Critical patent/WO2017217150A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Definitions

  • the present disclosure relates to a pressure sensor in which a piezoresistor is arranged on a diaphragm formed on a semiconductor substrate, and a detection signal corresponding to the pressure is output using a change in the resistance value of the piezoresistor according to the pressure. .
  • Patent Document 1 Conventionally, as this type of pressure sensor, for example, one described in Patent Document 1 has been proposed.
  • this pressure sensor an annular support portion is formed by simultaneously removing the outer edge portion and the diaphragm portion on the back surface side of the sensor substrate, and a circular diaphragm is formed inside the support portion.
  • the zero shift caused by the change in temperature and static pressure based on the reduction in area and symmetry of the bonded portion that is, Suppresses the effect of zero point offset on thermal stress and mounting stress.
  • the support portion formed on the sensor substrate has an annular shape, it is effective for suppressing the offset of the zero point with respect to the thermal stress and the mounting stress, but the sensitivity to the pressure application is lowered. That is, the magnitude of sensor output obtained with respect to pressure application is reduced.
  • a pressure sensor is a chip made of a semiconductor having a rectangular plate shape, and a first concave portion is formed on a back surface, and a thin portion on a front surface side corresponding to the first concave portion is used as a diaphragm.
  • the sensor chip is configured and includes a sensor chip having a piezoresistance on the surface and a bonding member bonded to the support part on the back surface of the sensor chip.
  • the second recess is formed on the back surface of the sensor chip
  • the upper surface shape of the outer wall surface of the support portion is a polygonal shape of a quadrangle or more, and the inner wall surface of the support portion that forms the diaphragm shape.
  • the upper surface shape is a polygonal shape that is equal to or greater than a quadrangle.
  • the shape of the upper surface of the inner wall surface of the support portion that is, the shape of the diaphragm constituted by the recesses is made polygonal.
  • the upper surface shape of the inner wall surface of the support portion is a polygonal shape, it is possible to increase the amount of distortion of the diaphragm with respect to the pressure application as compared to the circular shape, thereby improving the sensitivity of the pressure sensor. It becomes possible.
  • the second recesses are formed at the four corners of the back surface of the sensor chip, the upper surface shape of the outer wall surface of the support portion is circular, and the support that forms the shape of the diaphragm
  • the upper surface shape of the inner wall surface of the part is a polygonal shape of a quadrangle or more.
  • the pressure sensor according to one aspect of the present disclosure is obtained by making the upper surface shape of the inner wall surface of the support portion a polygonal shape that is equal to or greater than a quadrangle. The same effect can be obtained.
  • a pressure sensor includes an adhesive that is disposed between the sensor chip and the bonding member, and bonds the support portion and the bonding member.
  • the outer shape viewed from the surface side of the sensor chip is made to be a polygonal shape of a square or more or a circle.
  • the outer shape of the adhesive may be different from that of the sensor chip, and the substantial shape of the outer wall surface of the sensor chip may be defined by the shape of the adhesive. Even if it does in this way, the effect similar to the pressure sensor in one viewpoint of this indication can be acquired.
  • FIG. 3 is a cross-sectional view taken along the line IIIA-IIIA in FIG.
  • FIG. 3 is a cross-sectional view taken along line IIIB-IIIB in FIG.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 4.
  • FIG. 4 It is a figure which shows the layout of the pressure sensor concerning 3rd Embodiment. It is a side view of the pressure sensor shown in FIG. It is sectional drawing in the IX-IX line in FIG.
  • the pressure sensor according to the first embodiment will be described.
  • This pressure sensor is applied to, for example, measurement of pressure of a pressure medium such as corrosive liquid or gas.
  • the pressure sensor measures the exhaust gas pressure in the exhaust pipe of a diesel engine vehicle, and measures the differential pressure before and after a DPF (abbreviation of diesel particulate filter) as an exhaust purification filter provided in the exhaust pipe. Applicable to etc.
  • FIGS. 1, 2, 3A, and 3B 1 is a layout diagram corresponding to the cross-sectional view taken along the line II in FIG. Further, FIG. 2 is not a cross-sectional view, but is hatched for convenience of understanding.
  • the pressure sensor S1 of the present embodiment includes a semiconductor diaphragm sensor chip 10 and a wiring board 20 as a bonding member bonded to the sensor chip 10. .
  • the sensor chip 10 is a chip made of a semiconductor such as Si (silicon) having a rectangular plate shape having a front surface 11 and a back surface 12, and is constituted by a silicon substrate whose surface orientation is the ⁇ 110> plane, for example. ing.
  • the sensor chip 10 has a square upper surface shape when viewed from the normal direction of the surface 11.
  • a recess 13 is formed on the center side of the back surface 12 of the sensor chip 10.
  • the recess 13 is formed by chemical etching or the like. Since such a concave portion 13 is formed, a portion of the sensor chip 10 where the concave portion 13 is formed is a thin portion, and a diaphragm 14 is configured by the thin portion.
  • the periphery of the recess 13 in the sensor chip 10 is a support portion 15 that is thicker than the diaphragm 14. Furthermore, in the case of this embodiment, the recessed part 16 is also formed in the outer edge of the support part 15, and the external shape of the support part 15 becomes a predetermined shape.
  • the recess 13 has a rotationally symmetric polygonal shape with the center of the recess 13 as the center of rotation, here an octagon.
  • the recess 13 is a symmetrical octagon with a perpendicular bisector of each side of the octagon formed by the recess 13 as a symmetry line, and is preferably a regular octagon.
  • the piezoresistor 17 which comprises the strain gauge which consists of diffused resistance etc. is provided in the position made into the diaphragm 14 in the surface 11 of the sensor chip 10.
  • FIG. a plurality of piezoresistors 17 are provided, and in the present embodiment, four piezoresistors 17a to 17d are provided.
  • the piezoresistors 17a and 17b are arranged to face each other on both sides in one direction on the surface of the sensor chip 10 with the center position of the diaphragm 14 as the center.
  • one piezoresistor 17c and 17d is disposed opposite to each other on both sides in the other direction, which is a direction perpendicular to one direction.
  • a total of four piezoresistors 17a to 17d constitute a Wheatstone bridge circuit.
  • Two piezoresistors 17a and 17b arranged opposite to both sides in one direction are side gauges arranged on the outer peripheral side in the diaphragm 14.
  • two piezoresistors 17c and 17d disposed opposite to both sides in the other direction are center gauges disposed on the inner peripheral side of the diaphragm 14 with respect to the piezoresistors 17a and 17b.
  • the sensor chip 10 having the structure of the present embodiment when the diaphragm 14 is deformed as pressure is applied, compressive stress is applied to the piezoresistors 17a and 17b due to the distortion based on the deformation. Tensile stress is applied to the piezoresistors 17c and 17d. Then, when the midpoint voltage of the Wheatstone bridge circuit formed by the piezoresistors 17a to 17d is changed, the applied pressure can be converted into an electric signal and output.
  • the recess 16 has a configuration in which the four corners of the sensor chip 10 having a quadrangular shape are removed in a triangular shape so that the upper surface shape of the outer wall surface of the support portion 15 is similar to the recess 13. .
  • the octagon formed by the inner wall surface of the support portion 15, that is, the octagon that becomes the diaphragm 14 and the octagon formed by the outer wall surface of the support portion 15 are arranged concentrically, and each of the octagons It arrange
  • the recess 16 is constituted by removing the etching chip halfway through the thickness of the sensor chip 10.
  • the recess 16 is formed so that the outer shape of the support portion 15 in the sensor chip 10 is an octagon. Therefore, instead of the recess 16, the entire thickness of the sensor chip 10 is removed. It is also possible. However, for such a configuration, it is necessary to make the outer shape of the sensor chip 10 octagonal not by etching but by dicing or the like, and special dicing equipment such as plasma dicing is required.
  • the concave portion 16 when used, a simple dicing facility is not required because the etching is sufficient, and the concave portion 13 is formed using the etching equipment used when forming the concave portion 13 for forming the diaphragm 14. 16 can be formed.
  • dicing equipment generally used conventionally can be used for dicing.
  • the sensor chip 10 can be kept in a square shape on the surface 11 side of the recess 16. For this reason, it is possible to maintain chip rigidity during wire bonding or the like. Further, by keeping the sensor chip 10 in a square shape on the surface 11 side, the sensor chip 10 can be held without reducing the holding portion when die mounting is performed when the sensor chip 10 is bonded to the wiring board 20 as described later. Is possible.
  • the depths of the recess 13 and the recess 16 may be equal, but here, the depth of the recess 16 is made shallower than that of the recess 13 so that the outer edge of the sensor chip 10 is thicker than the diaphragm 14. It is trying to become. As a result, it is possible to ensure durability against chipping of the outer edge portion of the sensor chip 10 while making the diaphragm 14 have an appropriate thickness.
  • the protective film 18 is made of an insulating film having an electrical insulating property such as polyimide resin or silicon nitride film (SiN).
  • the sensor chip 10 thus configured functions as a sensor portion of the semiconductor diaphragm type pressure sensor S1. That is, when pressure is applied, the sensor chip 10 outputs an electrical signal corresponding to the applied pressure due to the piezoresistive effect of the piezoresistor 17. More specifically, when the diaphragm 14 receives pressure from the diaphragm 14 and the diaphragm 14 is distorted by the pressure, the resistance value of the piezoresistor 17 formed on the diaphragm 14 changes, and the piezoresistors 17a to 17d constitute the Wheatstone bridge circuit. The point voltage changes. As a result, the sensor chip 10 can output an electrical signal corresponding to the applied pressure, that is, the applied pressure can be converted into an electrical signal and output.
  • the sensor chip 10 has the support portion 15 bonded to the wiring substrate 20 on the back surface 12 side.
  • the support portion 15 on the back surface 12 of the sensor chip 10 is bonded to the wiring substrate 20 via an adhesive 30.
  • the sensor chip 10 is attached to a glass pedestal, and the sensor chip 10 is bonded to the wiring board 20 via the glass pedestal.
  • the sensor chip 10 is directly attached to the wiring board 20. It has a joined structure.
  • the adhesive 30 include those made of, for example, silicone rubber, epoxy resin, or the like. Thus, by constituting the adhesive 30 with a low elasticity, it is possible to reduce the stress applied to the sensor chip 10.
  • the adhesive 30 has an opening 30 a that is slightly larger than the diaphragm 14 and has an octagonal shape corresponding to the shape of the diaphragm 14, and the outer shape is also octagonal.
  • each side of the opening 30 a and each side of the octagon formed by the outer shape of the adhesive 30 are parallel to each side of the diaphragm 14.
  • the sensor chip 10 is connected to the wiring board 20 in an octagonal region where the adhesive 30 is disposed.
  • the wiring board 20 is made of, for example, a ceramic board made of ceramic such as alumina, or a resin board such as a printed board.
  • the sensor chip 10 and the wiring board 20 are electrically connected by a bonding wire or the like (not shown), and the output of the Wheatstone bridge circuit is transmitted to the wiring board 20.
  • the wiring board 20 is also provided with other circuit elements such as a chip capacitor constituting the signal processing circuit, and the output of the Wheatstone bridge circuit is appropriately subjected to signal processing and then externally provided. Can be output to.
  • a resin case 40 is provided on the surface of the wiring board 20 opposite to the sensor chip 10, that is, below the wiring board 20 in FIG. 2, and the resin case 40 and the wiring board 20 are connected via an adhesive 31. Are fixed by being joined together.
  • the adhesive 31 the same silicone rubber as that of the adhesive 30 can be used.
  • the resin case 40 is attached to, for example, a hose of an exhaust pipe and has a pressure introduction passage 41 for introducing a pressure to be measured.
  • the wiring board 20 is provided with a pressure introduction hole 21 for introducing pressure from the back surface 12 side of the sensor chip 10 to the diaphragm 14.
  • the pressure introduction hole 21 communicates with the pressure introduction passage 41 of the resin case 40, and the diaphragm 14 passes through the pressure introduction passage 41 and the pressure introduction hole 21 from the back surface 12 side of the sensor chip 10 as shown in FIG.
  • a pressure medium to be measured for pressure is introduced.
  • the sensor chip 10 is sealed with a sealing gel 50 from the back surface 12 side to the wiring substrate 20.
  • a sealing gel 50 for example, a gel material such as silicone gel, fluorine gel, or fluorosilicone gel can be used.
  • the height of the sealing gel 50 is increased by the thickness of the pedestal, and stress increase due to the sealing gel 50 occurs. An increase in the amount of gel was incurred.
  • the sensor chip 10 is directly joined to the wiring board 20 without the pedestal as in the present embodiment, the height of the sealing gel 50 can be reduced, and the stress caused by the sealing gel 50 can be reduced. Can be reduced, and the amount of gel can also be reduced.
  • the front surface 11 side of the sensor chip 10 is, for example, atmospheric pressure
  • the pressure medium to be measured for pressure is, for example, exhaust gas
  • the pressure applied to the back surface 12 side of the diaphragm 14 is exhaust gas. Pressure.
  • the pressure sensor S1 is a relative pressure type sensor. That is, the pressure sensor S1 has a relative relationship in which the diaphragm 14 is distorted by a differential pressure between the pressure applied to the diaphragm 14 from the front surface 11 side of the sensor chip 10 and the pressure applied to the diaphragm 14 from the back surface 12 side of the sensor chip 10. It becomes a pressure type sensor.
  • the pressure sensor S1 is configured.
  • the pressure sensor S1 configured as described above, when the pressure of the pressure medium is applied to the diaphragm 14 through the pressure introduction passage 41 and the pressure introduction hole 21, the diaphragm 14 is applied to the pressure applied to the front surface 11 side and the back surface 12 side. Distortion is based on the pressure difference from the pressure of the applied pressure medium. Due to this distortion, the resistance values of the piezo resistors 17a to 17d change. Therefore, when a DC constant voltage is applied to the input terminal of the Wheatstone bridge circuit formed by the piezoresistors 17a to 17d, the midpoint voltage of the Wheatstone bridge circuit changes due to the change in the resistance value of the piezoresistors 17a to 17d. Based on this, an electric signal corresponding to the pressure of the pressure medium can be obtained as an output.
  • the shape of the outer wall surface of the support portion 15 is an octagonal shape.
  • the shape of the upper surface of the inner wall surface of the support portion 15, that is, the shape of the diaphragm 14 constituted by the concave portion 13 is an octagonal shape.
  • the upper surface shape of the inner wall surface of the support portion 15 is an octagonal shape, it is possible to increase the amount of distortion of the diaphragm 14 with respect to the pressure application as compared with the circular shape, and the sensitivity of the pressure sensor S1. Can be improved. The reason for this will be described below.
  • the shape of the inner wall surface of the support 15 is one of the parameters that determine the amount of distortion of the diaphragm 14.
  • the amount of distortion of the diaphragm 14 is determined by the difficulty of deformation based on the shape of the inner wall surface of the support portion 15.
  • This difficulty of deformation is expressed as an amount indicating the difficulty of deformation of the beam member with respect to the cross-sectional secondary moment, that is, the bending moment.
  • it can be expressed as a section modulus that is a value obtained by dividing the sectional moment of inertia by the distance from the inner wall surface of the support portion 15 to the central axis of the diaphragm 14.
  • the amount of strain of the diaphragm 14 is calculated based on the sectional moment of inertia or the section modulus
  • the shape of the inner wall surface of the support portion 15 is a circular shape
  • the amount of strain of the diaphragm 14 is compared with a polygonal shape.
  • the sensitivity is 0.73 times higher when the shape is circular.
  • the chip size of the sensor chip 10 is increased, even if the inner wall surface of the support portion 15 is circular, it is possible to obtain the same sensitivity as when it is polygonal.
  • the inner wall surface of the support portion 15 is formed in a polygonal shape, in this case, an octagonal shape, so that an improvement in sensitivity can be realized even if there is a restriction on the chip size.
  • the side gauge is arranged on the outer edge side of the diaphragm 14 as much as possible, the sensitivity can be further improved. It becomes possible.
  • Such a pressure sensor S1 is formed by, for example, laminating and bonding the wiring board 20 and the sensor chip 10 on the resin case 40 in order via the adhesives 30 and 31, and connecting the sensor chip 10 and the wiring board 20 to the wire. Manufactured by electrical connection by bonding or the like. Of course, the order of lamination and joining of each member is arbitrary, and may be changed as appropriate.
  • FIG. 4 is a layout diagram corresponding to the IV-IV sectional view of FIG.
  • FIG. 5 is not a cross-sectional view, hatching is shown for convenience in order to make the drawing easy to see.
  • each recess 16 is formed in a line shape.
  • the outer wall surface of the support portion 15 has an octagonal shape as in the first embodiment, but each recess 16 has a line shape along one side of the outer wall surface of the support portion 15. The thicker portion of the sensor chip 10 is left on the side farther from the center of the sensor chip 10 than the recess 16.
  • the adhesive 30 is in a state of being disposed not only at the opening 30a surrounding the diaphragm 14 and the outer shape of the octagonal portion but also at the portions corresponding to the four corners of the sensor chip 10.
  • the support portion 15 formed inside thereof can be formed in a polygonal shape. For this reason, also in the pressure sensor S1 of the structure of this embodiment, the same effect as 1st Embodiment can be acquired.
  • each recessed part 16 is comprised in the shape of one line here, it can also be comprised in the shape of a plurality of parallel lines.
  • FIGS. 7 is a layout diagram corresponding to the VII-VII cross-sectional view of FIG.
  • FIG. 8 is not a cross-sectional view, hatching is shown for convenience in order to make the drawing easy to see.
  • the upper surface shape of the inner wall surface of the support portion 15 remains polygonal, while the upper surface shape of the outer wall surface of the support portion 15 is circular. Moreover, the part which comprises the outer wall surface of the support part 15 among each recessed part 16 is made into circular arc shape so that the upper surface shape of the outer wall surface of the support part 15 may become circular shape.
  • the opening 30a surrounding the diaphragm 14 is an octagon, and the outer shape is a circle.
  • the sensitivity of the pressure sensor S1 can be improved by making the shape of the upper surface of the inner wall surface of the support portion 15, that is, the shape of the diaphragm 14, a polygonal shape.
  • the pressure sensor S1 having such a structure is basically the same as that of the first embodiment, and it is only necessary to change the mask when the recess 16 is formed by etching.
  • FIGS. 10 is a layout diagram corresponding to the II cross-sectional view of FIG. Although FIG. 11 is not a cross-sectional view, hatching is shown for convenience in order to make the drawing easy to see.
  • the upper surface shapes of the inner wall surface and the outer wall surface of the support portion 15 are both polygonal shapes, specifically, octagonal shapes.
  • the polygon which the upper surface shape of an outer wall surface comprises is shifted and formed in the circumferential direction with respect to the polygon which the upper surface shape of the inner wall surface of the support part 15 comprises.
  • the octagon shape formed by the outer wall surface is a predetermined angle with respect to the octagon shape formed by the inner wall surface of the support portion 15 as the rotation axis, for example, 45 °. The state is shifted.
  • each side of the opening 30 a surrounding the diaphragm 14 is parallel to each side of the diaphragm 14.
  • the octagon that forms the outer shape of the adhesive 30 is shifted from the sides of the diaphragm 14 by a predetermined angle with the center of the sensor chip 10 as the rotation axis.
  • the polygonal shape formed by the inner wall surface and the outer wall surface of the support portion 15 can be a layout in which the angle is shifted with the center of the sensor chip 10 as the rotation axis. Even with such a configuration, it is possible to suppress the influence of the offset of the zero point on the thermal stress and mounting stress, and it is possible to improve the sensitivity of the pressure sensor S1.
  • the pressure sensor S1 having such a structure is basically the same as that of the first embodiment, and it is only necessary to change the mask when the recess 16 is formed by etching.
  • FIGS. 12 is a layout diagram corresponding to the XII-XII cross-sectional view of FIG.
  • FIG. 13 is not a cross-sectional view, hatching is shown for convenience in order to make the drawing easy to see.
  • the case where the outer wall surface of the support portion 15 is circular as in the third embodiment will be described as an example. However, in the case where the outer wall surface is a polygon as in the first and fourth embodiments. But a similar structure can be applied.
  • the upper surface shape of the inner wall surface of the support portion 15 remains polygonal, while the upper surface shape of the outer wall surface of the support portion 15 is circular.
  • the outer wall surface of the support portion 15 becomes a tapered inclined surface by forming the recess 16 by isotropic etching or the like.
  • the sensitivity of pressure sensor S1 can be improved by making the upper surface shape of the inner wall surface of the support part 15, ie, the shape of the diaphragm 14, into a polygonal shape.
  • the pressure sensor S1 having such a structure is also basically the same as that of the first embodiment, and the recess 16 is formed by isotropic etching, so that the outer wall surface of the support portion 15 is merely an inclined surface. Good.
  • FIGS. 15 is a layout diagram corresponding to the XV-XV sectional view of FIG.
  • FIG. 16 is not a cross-sectional view, hatching is shown for convenience in order to make the drawing easy to see.
  • the sensor chip 10 has a recess 13 for forming the diaphragm 14, but the recess 16 that is a part of the surrounding support portion 15 is formed. Absent. However, the adhesive 30 has an octagonal opening 30a surrounding the diaphragm 14 and an outer shape of the octagon, as in the first embodiment.
  • the recess 16 is not formed for the sensor chip 10, but the adhesive 30 has the same shape as that of the first embodiment, and non-formation areas where the adhesive 30 is not formed at the four corners of the sensor chip 10 are configured. is doing. Thereby, the part adhere
  • the sensor chip 10 is not formed with the recesses 16 and the outer shape of the adhesive 30 is an octagon, so that the shape of the outer wall surface of the support portion 15 is substantially an octagon. It is the same as the case. For this reason, it is possible to disperse the thermal stress and the mounting stress as compared with the case where the outer shape of the sensor chip 10 remains a square shape and the outer shape of the adhesive 30 remains a square shape. Therefore, it is possible to suppress the influence of the zero point offset on the thermal stress and the mounting stress.
  • the outer shape of the adhesive 30 may be different from that of the sensor chip 10, and the substantial shape of the outer wall surface of the sensor chip 10 may be defined by the shape of the adhesive 30.
  • the outer shape of the adhesive 30 may be the same shape as the inner wall surface of the support portion 15, that is, a polygon more than a quadrangle, or the second to fourth embodiments.
  • the shape of the inner wall surface of the support portion 15 may be different.
  • the shape of the inner wall surface of the support portion 15 may be a polygon that is equal to or greater than a quadrangle
  • the outer shape of the adhesive 30 may be a circle or may be a polygon that is different from the shape of the inner wall surface of the support portion 15. .
  • an octagon has been described as an example of a polygon formed by the inner wall surface of the support portion 15, that is, a polygon formed by the diaphragm 14 or a polygon formed by the outer wall surface of the support portion 15.
  • this is merely an example, and other polygons such as a hexagon, a decagon, and a dodecagon may be used as long as the polygon is a quadrangle or more.
  • a Wheatstone bridge circuit including piezoresistors 17a to 17d is formed on the diaphragm 14, it is preferable that the side gauges and the center gauges of the piezoresistors 17a to 17d are arranged symmetrically in the diaphragm 14. Therefore, it is preferable to use a polygonal shape with even angles.
  • the pressure introduction hole 21 is provided in the wiring substrate 20 to realize the back pressure receiving pressure sensor S1.
  • the diaphragm 14 receives the measurement pressure from the front surface 11 of the sensor chip 10. It may be a surface pressure-receiving type. In that case, the wiring board 20 may not have the pressure introducing hole 21.
  • the joining member to which the back surface 12 side of the sensor chip 10 is joined is not limited to the wiring substrate 20 described above, and various members such as a lead frame and a resin member are applicable.
  • the adhesive 30 does not have to be composed of a material such as silicone rubber or epoxy resin.
  • the adhesive 30 may contain a granular member 30 b such as a bead for maintaining the thickness, that is, the height of the adhesive 30.
  • a granular member 30b such as a bead for maintaining the thickness, that is, the height of the adhesive 30.
  • a granular member 30b it is preferable to use a low elastic material such as a polymer such as a silicone rubber or an epoxy resin that constitutes the adhesive 30.
  • the pressure sensor is not limited to the one that detects the exhaust pressure described above, but is used for pressure detection of various applications such as atmospheric pressure, engine intake pressure, and various equipment and container pressure. be able to.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

Selon l'invention, la forme d'une surface supérieure d'une surface de paroi intérieure d'une partie de support (15), en d'autres termes, la forme d'un diaphragme (14) formé par une partie en retrait (13), est réalisée de façon à présenter une forme polygonale ayant quatre côtés ou plus, par exemple une forme octogonale. Le fait de former la surface supérieure de la surface de la paroi intérieure de la partie de support (15) en une forme polygonale ayant au moins quatre côtés, permet de cette manière au diaphragme (14) de se déformer d'une plus grande quantité par rapport à l'application d'une pression que si une forme circulaire est utilisée, ce qui permet d'améliorer la sensibilité d'un capteur de pression (S1).
PCT/JP2017/017876 2016-06-14 2017-05-11 Détecteur de pression WO2017217150A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016-118258 2016-06-14
JP2016118258 2016-06-14
JP2017-024339 2017-02-13
JP2017024339A JP2017223643A (ja) 2016-06-14 2017-02-13 圧力センサ

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393163A (ja) * 1986-10-07 1988-04-23 Fuji Electric Co Ltd 半導体圧力センサ
JPS63281034A (ja) * 1987-05-13 1988-11-17 Toshiba Corp 半導体圧力センサ
JPH09304206A (ja) * 1996-05-14 1997-11-28 Yamatake Honeywell Co Ltd 半導体圧力変換器
JP2010122037A (ja) * 2008-11-19 2010-06-03 Denso Corp 圧力センサ
JP2014134427A (ja) * 2013-01-09 2014-07-24 Denso Corp 物理量センサおよびその製造方法
US20140252362A1 (en) * 2013-03-08 2014-09-11 Sensetech Co., Ltd Thin film apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393163A (ja) * 1986-10-07 1988-04-23 Fuji Electric Co Ltd 半導体圧力センサ
JPS63281034A (ja) * 1987-05-13 1988-11-17 Toshiba Corp 半導体圧力センサ
JPH09304206A (ja) * 1996-05-14 1997-11-28 Yamatake Honeywell Co Ltd 半導体圧力変換器
JP2010122037A (ja) * 2008-11-19 2010-06-03 Denso Corp 圧力センサ
JP2014134427A (ja) * 2013-01-09 2014-07-24 Denso Corp 物理量センサおよびその製造方法
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