Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
  • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C21/00—Alloys based on aluminium
  • C22C21/12—Alloys based on aluminium with copper as the next major constituent
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/0021—Reactive sputtering or evaporation
  • C23C14/0036—Reactive sputtering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/0641—Nitrides
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/08—Oxides
  • C23C14/081—Oxides of aluminium, magnesium or beryllium
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/14—Metallic material, boron or silicon
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
  • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
  • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
  • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B33/00—Electroluminescent light sources
  • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
  • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode

Definitions

• the present invention relates to a sputtering target (hereinafter also referred to as a “target”) used for forming an electrode or an insulating film, and more specifically, a display device such as a liquid crystal display or an organic EL (OEL: Organic Electro-Luminescence) display. Or it is related with the sputtering target used for electrode formation used for input devices, such as a touch panel.
• a sputtering target hereinafter also referred to as a “target”
• a display device such as a liquid crystal display or an organic EL (OEL: Organic Electro-Luminescence) display.
• OEL Organic Electro-Luminescence
• Al alloys are widely used in the field of display devices such as liquid crystal displays because of their low electrical resistivity and ease of processing, and are used as materials for wiring films, electrode films, or reflective electrode films. Yes.
• an active matrix type liquid crystal display includes a thin film transistor (TFT: Thin Film Transistor) that is a switching element, and the wiring material generally includes various Al alloy thin films such as a pure Al thin film or an Al—Nd alloy. It is used.
• TFT Thin Film Transistor
• Al alloy thin films such as a pure Al thin film or an Al—Nd alloy. It is used.
• a sputtering method using a sputtering target is generally employed.
• the sputtering method has an advantage that a thin film having the same composition as the target can be formed.
• an Al alloy thin film formed by sputtering can dissolve an alloy element that does not dissolve in an equilibrium state, and exhibits excellent performance as a thin film. Yes, development of a sputtering target as a raw material is underway.
• Patent Document 1 discloses a sputtering target which is made of Al or an Al alloy and has a (111) crystal orientation content of 20% or more measured by X-ray diffraction method on the sputtering surface.
• Patent Document 1 it is verified that the film formation rate is improved by setting the crystal orientation to the (111) plane in an Al—Si based alloy in which Si is added to Al.
• Patent Document 2 discloses an Al-based alloy sputtering target characterized by containing Ta.
• the example of Patent Document 2 shows an Al—Ta alloy in which 1.5 atomic% of Ta is added to Al, and the film formation rate is 1.6 times or more of the pure Al ratio.
• an object of the present invention is to provide an Al alloy sputtering target that contributes to an improvement in film formation rate and is excellent in target productivity.
• the present inventors have proposed that the Al alloy sputtering target to which Cu is added in a high addition amount of more than 6 atomic% and not more than 17 atomic% is Ta. It has been found that it has a high film formation rate as compared with the Al alloy sputtering target contained, and also has excellent manufacturability, and has completed the present invention.
• the present invention relates to the following [1] to [9].
• the Al alloy thin film according to [4] which is an aluminum nitride thin film or an aluminum oxide thin film formed by reactive sputtering.
• a display device comprising the Al alloy thin film according to [4].
• a display device comprising the Al alloy thin film according to [5].
• An input device comprising the Al alloy thin film according to [4].
• An input device comprising the Al alloy thin film according to [5].
• the Al alloy sputtering target of the present invention contains more than 6 atomic% and 17 atomic% or less of Cu, the film forming rate can be improved and the productivity is excellent as compared with the Al—Ta alloy.
• the Al alloy sputtering target of the present invention is an Al alloy sputtering target for forming an Al alloy thin film by sputtering, contains Cu in an amount of more than 6 atomic% and 17 atomic% or less, and the balance is made of Al and inevitable impurities. It is characterized by.
• the Al alloy sputtering target is a sputtering target mainly composed of Al containing pure Al and an alloy element.
• the Cu content in the Al alloy sputtering target of the present invention is more than 6 atomic%, preferably 7 atomic% or more. By making Cu content more than 6 atomic%, it is excellent in productivity and a high film-forming rate can be obtained.
• the Cu content is 17 atomic% or less, and is preferably 12 atomic% or less in order to further suppress the decrease in the crack limit rolling reduction.
• the yield in the SF (Spray forming or spray forming) process and the reduction in the crack limit rolling reduction in the forging process are suppressed, and the target productivity is drastically decreased. Can be prevented.
• the inevitable impurities include, for example, elements inevitably mixed in the manufacturing process, for example, Fe, Si, and the like, and the content of these is preferably 0.03% by mass or less in total. More preferably, the content is 0.01% by mass or less.
• the Al alloy sputtering target of the present invention is excellent in manufacturability by adding a small amount of rare earth element as a second additive element to make an Al—Cu—X alloy (X: rare earth element), and when no rare earth element is added. Thus, the film formation rate can be further improved.
• the content of rare earth elements is preferably 0.1 atomic% or more, more preferably 2 atomic% or more. By setting the content of the rare earth element to 0.1 atomic% or more, the effect of the second additive element described above can be obtained.
• the rare earth element content is preferably 5.5 atomic percent or less, and more preferably 3.7 atomic percent or less. By setting the rare earth element content to 5.5 atomic% or less, it is possible to suppress a decrease in the yield of the SF process and a decrease in the crack limit rolling reduction, and to prevent the target productivity from deteriorating.
• the rare earth element means an element group in which Sc (scandium) and Y (yttrium) are added to a lanthanoid element (a total of 15 elements from La with atomic number 57 to Lu with atomic number 71 in the periodic table). .
• a lanthanoid element a total of 15 elements from La with atomic number 57 to Lu with atomic number 71 in the periodic table.
• Nd, La, Y, Sc, Gd, Dy, Lu, Ce, Pr, and Tb are preferable and Nd is more preferable from the viewpoint of improving the film forming rate. Of these, one or more can be used in any combination.
• the Al alloy thin film of the present invention is preferably formed by a sputtering method using the above-described sputtering target of the present invention. This is because according to the sputtering method, a thin film having excellent in-plane uniformity of components or film thickness can be easily formed.
• Cu is contained more than 6 atomic% and 17 atomic% or less, and the balance is composed of Al and inevitable impurities.
• the Al alloy thin film formed by the reactive sputtering method include an aluminum nitride thin film and an aluminum oxide thin film.
• the conditions of the reactive sputtering method may be appropriately controlled according to, for example, the type of the Al alloy to be used, but are preferably controlled as follows.
• -Substrate temperature room temperature to 400 ° C
• Sputtering power 100-500W
• -Ultimate vacuum 1 x 10-5 Torr or less
• the shape of the target includes those processed into an arbitrary shape (for example, a square plate shape, a circular plate shape, a donut plate shape, etc.) according to the shape or structure of the sputtering apparatus.
• an arbitrary shape for example, a square plate shape, a circular plate shape, a donut plate shape, etc.
• Examples of the method for producing the target include a method obtained by producing an ingot made of an Al-based alloy by a melt casting method, a powder sintering method, a spray forming method, and a preform (final dense body) made of an Al-based alloy. And a method obtained by densifying the preform by a densifying means after the intermediate) is obtained.
• the present invention includes a display device and an input device provided with the Al alloy thin film.
• the display device include a display device in which the Al alloy film is used for a source-drain electrode and a signal line of a thin film transistor, and the drain electrode is directly connected to a transparent conductive film.
• the input device provided with the input means in the display apparatus like a touch panel etc. is mentioned, for example.
• SF yield preform weight / melting raw material (110 kg) x 100 (%) ⁇ : 40% or more ⁇ : Over 30% to less than 40% ⁇ : 30% or less
• the crack limit rolling reduction was evaluated according to the following criteria. ⁇ : 50% or more ⁇ : Over 30% to less than 50% ⁇ : 30% or less
• Example 1 the deposition rate ratio was determined by dividing the Al alloy average deposition rate by the pure Al average deposition rate.
• the film formation rate ratio film formation rate: pure Al ratio
• the film formation rate ratio exceeds 1.50, which is the film formation rate ratio of Al-1 atomic% Ta, was set as a range in which the effect of improving the film formation rate by alloying was recognized.
• the average film formation rate of the Al-7 atomic% Cu-rare earth alloy was divided by the Al alloy containing 7 atomic% of Cu to obtain the film formation rate ratio.
• the comprehensive judgment was evaluated according to the following criteria.
• ⁇ The film formation rate ratio is 1.50 or more, and at least one of the SF yield and the crack limit rolling reduction is ⁇ .
• delta The film-forming rate ratio is 1.50 or more, and neither SF yield nor crack limit rolling reduction is (circle).
• X The film formation rate ratio is 1.50 or more, but at least one of SF yield and crack limit rolling reduction is x, or the film formation rate ratio is 1.50 or less.
• Example 1 An Al film having the composition shown in Table 1 was formed, and the film formation rate and manufacturability were evaluated. The results are shown in Table 1.
• Table 1 Examples 1 to 4 are Examples, and Examples 5 to 8 are Comparative Examples.
• the pure Al and Al-1 atomic% Cu to Al-17 atomic% Cu of Examples 1 to 7 were confirmed to improve the film formation rate as the amount of Cu added increased. With 17 atomic% Cu, the pure Al ratio was improved to 2.12 times.
• Example 4 when the Cu content exceeds 12 atomic%, the crack limit rolling reduction decreases, so by setting the Cu content to 12 atomic% or less, the crack critical rolling reduction is decreased. It was found that can be suppressed. It is considered that as a factor that the crack limit rolling reduction decreased with the increase in the Cu content, the metal hardness in the target increased with the increase in the added elements, so that the target hardness increased and as a result cracking occurred.
• Example 8 it was found that, in the range where the amount of Cu added is larger than that of Al-17 atomic% Cu, cracks frequently occur in the processing step during target production, resulting in poor productivity. From this result, it was found that the productivity of the target can be improved by setting the Cu content to 17 atomic% or less.
• Example 2 By adding a rare earth element, which has been confirmed to improve the film formation rate in a small amount, to the Al—Cu alloy extracted in Example 1, an Al—Cu—X alloy (X: rare earth element) can be further added. The effect of improving the deposition rate was confirmed.
• Table 2 shows the results of evaluating the film formation rate and manufacturability.
• Examples 9 to 24 are Examples, and Examples 25 and 26 are Comparative Examples.
• Example 25 since the addition amount of the rare earth element was too small, 0.05 atomic%, the film forming rate improving effect by the second additive element was not confirmed. In addition, in Example 26, the amount of rare earth element added was too large at 6 atomic%, so that the critical crack reduction did not reach the standard.
• the film formation rate of the Al alloy sputtering target can be improved by adding 0.1 to 5.5 atomic% of a rare earth element as the second additive element.

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• 2016
  • 2016-06-07 JP JP2016113609A patent/JP6228631B1/ja not_active Expired - Fee Related
• 2017
  • 2017-05-16 WO PCT/JP2017/018333 patent/WO2017212879A1/ja active Application Filing
  • 2017-05-16 CN CN201780033719.7A patent/CN109312448A/zh active Pending
  • 2017-05-16 KR KR1020187035126A patent/KR20190003743A/ko not_active Application Discontinuation
  • 2017-05-31 TW TW106117806A patent/TWI632248B/zh not_active IP Right Cessation

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