WO2017209357A1 - 양방향 도전성 핀, 양방향 도전성 패턴 모듈 및 그 제조방법 - Google Patents

양방향 도전성 핀, 양방향 도전성 패턴 모듈 및 그 제조방법 Download PDF

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Publication number
WO2017209357A1
WO2017209357A1 PCT/KR2016/012421 KR2016012421W WO2017209357A1 WO 2017209357 A1 WO2017209357 A1 WO 2017209357A1 KR 2016012421 W KR2016012421 W KR 2016012421W WO 2017209357 A1 WO2017209357 A1 WO 2017209357A1
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WO
WIPO (PCT)
Prior art keywords
pattern
upper contact
lower contact
contact portion
bidirectional conductive
Prior art date
Application number
PCT/KR2016/012421
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English (en)
French (fr)
Korean (ko)
Inventor
문해중
이지형
이은주
Original Assignee
주식회사 이노글로벌
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160134778A external-priority patent/KR20170137592A/ko
Application filed by 주식회사 이노글로벌 filed Critical 주식회사 이노글로벌
Priority to CN201680001638.4A priority Critical patent/CN108283014A/zh
Publication of WO2017209357A1 publication Critical patent/WO2017209357A1/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer

Definitions

  • the present invention relates to a bidirectional conductive pin, a bidirectional conductive pattern module, and a method of manufacturing the same, and more particularly, to a bidirectional conductive pin, a bidirectional conductive pattern module, and a fabrication thereof, which can compensate for a disadvantage of a pogo-pin type semiconductor test socket. It is about a method.
  • the semiconductor device After the semiconductor device is manufactured, the semiconductor device performs a test to determine whether the electrical performance is poor.
  • the positive test of the semiconductor device is performed by inserting a semiconductor test socket (or a contactor or a connector) formed between the semiconductor device and the test circuit board so as to be in electrical contact with a terminal of the semiconductor device.
  • the semiconductor test socket is also used in a burn-in test process during the manufacturing process of the semiconductor device, in addition to the final positive inspection of the semiconductor device.
  • the conventional Pogo-pin type semiconductor test socket has a limitation in manufacturing a semiconductor test socket for testing a semiconductor device to be integrated.
  • 1 to 3 are diagrams showing an example of a conventional Pogo-pin type semiconductor test socket disclosed in Korean Patent Laid-Open No. 10-2011-0065047.
  • a conventional semiconductor test socket 100 includes a housing 110 having a through hole 111 formed in a vertical direction at a position corresponding to a terminal 131 of a semiconductor device 130; Pogo-pin 120 mounted in the through hole 111 of the housing 110 to electrically connect the terminal 131 of the semiconductor device 130 and the pad 141 of the test device 140. Is done.
  • the configuration of the pogo-pin (120) (pogo-pin) (120) is used as a pogo-pin (Pogo-pin) body, the barrel 124 having a cylindrical shape with an empty inside, and formed on the lower side of the barrel 124
  • the semiconductor device may be connected to a contact tip 123, a spring 122 connected to the contact tip 123 inside the barrel 124 and contracting and expanding a motion, and a spring 122 connected to the contact tip 123.
  • 130 is composed of a contact pin 121 to perform the vertical movement in accordance with the contact.
  • the spring 122 is contracted and expanded while absorbing the mechanical shock transmitted to the contact pin 121 and the contact tip 123, the terminal 131 of the semiconductor device 130 and the pad of the test device 140 141 is electrically connected to check whether there is an electrical defect.
  • the conventional Pogo-pin type semiconductor test socket as described above uses a physical spring to maintain elasticity in the vertical direction, inserts the spring and the pin into the barrel, and Since the process has to be inserted into the through-hole of the housing again, the process is complicated and the manufacturing cost increases due to the complexity of the process.
  • the physical configuration itself for the implementation of the electrical contact structure having elasticity in the vertical direction has a limit to implement the fine pitch, and the situation has already reached the limit to apply to the integrated semiconductor device in recent years.
  • the limited technology forms a perforated pattern in a vertical direction on a silicon main body made of an elastic silicon material, and then conductive powder inside the perforated pattern. It is a PCR socket type semiconductor test socket that fills the conductive pattern to form a conductive pattern.
  • the PCR-type semiconductor test socket also has a problem due to structural limitations of the PCR-type semiconductor test socket, such as a problem of shortening of life due to separation of conductive powder filled therein.
  • the present invention has been made to solve the above problems, to compensate for the shortcomings of the pogo-pin type and PCR-type semiconductor test socket, bi-directional conductivity that can replace the pogo-pin type semiconductor test socket
  • An object of the present invention is to provide a pin, a bidirectional conductive pattern module, and a method of manufacturing the same.
  • the conductive thin plate is formed by winding in the vertical shape in the axial direction, and the upper contact portion to elastically support during contact in the upper direction, and the thin plate having conductivity
  • a lower contact part formed by winding in a vertical shape with an axis in the vertical direction and supporting elastically when contacted in a lower direction, and at least one connection part electrically connecting the upper contact part and the lower contact part; Achieved by a bidirectional conductive pin.
  • the upper contact portion, the lower contact portion and the connecting portion may be formed together by winding a base pattern formed by patterning a conductive thin plate in a winding shape along the vertical direction.
  • the pin body may further include an insulating pin body having an elasticity formed between the upper contact portion and the lower contact portion to be accommodated therein.
  • the apparatus may further include at least one internal support part extending downward from the upper contact part, the lower end of which is spaced apart from the lower contact part by a predetermined distance.
  • the inner curled portion of the upper contact portion may protrude in an upward direction than the outer curled portion and may be formed stepped outward in the radial direction.
  • the inner contact portion of the lower contact portion may protrude in a lower direction than the outer curl portion to be stepped outward in the radial direction.
  • connection part may be formed to have a predetermined width in the horizontal direction to support the upper contact part and the lower contact part in the vertical direction between the upper contact part and the lower contact part.
  • the above object is, according to another embodiment of the present invention, in the bidirectional conductive pattern module, the insulating body and the inside of the insulating body in a state spaced apart from each other in the horizontal direction, each of the upper and lower portions of the insulating body A plurality of bidirectional conductive pins exposed on the top and bottom surfaces of the substrate;
  • Each of the bidirectional conductive pins is formed by winding a thin conductive sheet in an up-and-down direction in an axial spring shape to support elastically upon contact in an upward direction, and a thin conductive plate is axially in the vertical direction.
  • the bidirectional conductive pattern module characterized in that it comprises a lower contact portion which is formed in the form and is elastically supported during contact in the lower direction, and at least one connection portion that electrically connects the upper contact portion and the lower contact portion. do.
  • the upper contact portion, the lower contact portion and the connecting portion may be formed together by winding a base pattern formed by patterning a conductive thin plate in a winding shape along the vertical direction.
  • the apparatus may further include at least one internal support part extending downward from the upper contact part, the lower end of which is spaced apart from the lower contact part by a predetermined distance.
  • the inner curled portion of the upper contact portion may protrude in an upward direction than the outer curled portion and may be formed stepped outward in the radial direction.
  • the inner curled portion of the lower contact portion may protrude in a lower direction than the outer curled portion and may be stepped outward in the radial direction.
  • connection part may be formed to have a predetermined width in the horizontal direction to support the upper contact part and the lower contact part in the vertical direction between the upper contact part and the lower contact part.
  • the above object is, according to another embodiment of the present invention, in the method of manufacturing a bidirectional conductive pattern module, (a) by patterning a thin plate having conductivity, and a plurality of upper contact patterns spaced apart from each other in the horizontal direction, and up and down A base having a plurality of lower contact patterns spaced apart from the plurality of upper contact patterns in the horizontal direction and spaced apart from each other in the horizontal direction, and at least one connection pattern connecting the upper contact patterns and the lower contact patterns at mutually corresponding positions; Forming a pattern; (b) plating the base pattern; (c) connecting the plurality of upper contact portions, the plurality of lower contact portions, and the corresponding upper contact portion and the lower contact portion by rolling the shaft in the up-down direction such that each of the upper contact pattern and each of the lower contact patterns has a winding shape. It is also achieved by a method of manufacturing a bidirectional conductive pattern module comprising the step of forming a connecting portion.
  • connection pattern may be formed in a diagonal direction to connect the upper contact pattern and the lower contact pattern corresponding to each other.
  • the upper contact pattern and the lower contact pattern corresponding to each other in the step (c) may be formed around the same axis in an up and down direction so that the upper contact part and the lower contact part are formed at a position corresponding to the up and down direction.
  • step (a) at least one inner support pattern protruding from the upper contact pattern in the direction of the lower contact pattern is formed together with a thin plate having conductivity in the patterning process;
  • the inner support pattern may form an inner support part extending downward from the upper contact part through the step (c).
  • the upper contact pattern may have a different width in the vertical direction or may be stepped in the horizontal direction, such that the inner curled portion of the upper contact portion protrudes upward from the outer curled portion to step radially outwardly. Can be formed.
  • the lower contact pattern is formed in a different width in the vertical direction or stepped in the horizontal direction, so that the inner curled portion of the lower contact portion protrudes in a lower direction than the outer curled portion to step outward in the radial direction Can be formed.
  • connection pattern may be formed to have a predetermined width in the horizontal direction so that the connection part may support the upper contact part and the lower contact part in the vertical direction between the upper contact part and the lower contact part.
  • the step of manufacturing the bidirectional conductive pattern module according to the manufacturing method of the bidirectional conductive pattern module, and the bidirectional conductive pattern module is also achieved by the method of manufacturing a bi-directional conductive pin comprising the step of cutting the insulating body of the upper and lower direction, but the interconnected one by one of the upper contact, the lower contact and the connecting unit to form a plurality of bi-directional conductive pins. .
  • the connecting portion is wound together wound in the circumferential direction It has elastic restoring force in the vertical direction, so that one bidirectional conductive pin can be realized in the vertical direction.
  • the main part of the main spring is first contacted and then sequentially contacted to the outside to allow more stable contact and stable restoration when the contact is removed. do.
  • the manufacturing method can be simplified and the manufacturing cost can be significantly reduced.
  • a semiconductor test in which a plurality of conductive patterns are formed in a horizontal direction and a depth direction by manufacturing a bidirectional conductive pattern module having a plurality of bidirectional conductive pins formed in a horizontal direction by simultaneously manufacturing a plurality of patterns in the horizontal direction and placing them in a depth direction. It is also possible to manufacture a socket for use.
  • 1 to 3 are diagrams for explaining a conventional Pogo-pin type semiconductor test socket
  • FIG. 5 and 6 are views for explaining a manufacturing method of a bidirectional conductive pin and a bidirectional conductive pattern module according to the present invention
  • the present invention relates to a bidirectional conductive pin, a bidirectional conductive pattern module and a method of manufacturing the same.
  • the bidirectional conductive pin according to the present invention is formed by winding a thin conductive plate in an up-and-down direction in an axial direction, and an upper contact part elastically supporting the contact in the upper direction, and a thin conductive plate is in the vertical direction. It is characterized in that it comprises a lower contact portion which is formed in a winding form and elastically supports when contacting in the lower direction, and at least one connecting portion electrically connecting the upper contact portion and the lower contact portion.
  • the bidirectional conductive pin 10 according to the present invention includes an upper contact 11, a lower contact 12, and a connection 13.
  • the bidirectional conductive pin 10 according to the present invention may further include a pin body 14.
  • Bi-directional conductive pin 10 is produced using a base pattern 100a formed through the patterning of a thin plate having conductivity, for example, a metal thin plate.
  • the base pattern 100a includes an upper contact pattern 11a, a lower contact pattern 12a, and at least one connection pattern 13a connecting them.
  • the upper contact pattern 11a and the lower contact pattern 12a of the base pattern 100a are dried two or more times with the axis (Axis, hereinafter equal) up and down, as shown in FIG. 4C.
  • the upper contact portion 11 and the lower contact portion 12 of the bidirectional conductive pin 10 according to the present invention can be formed.
  • connection pattern 13a is in the diagonal direction between the upper contact pattern 11a and the lower contact pattern 12a and the lower contact with the upper contact pattern 11a.
  • the pattern 12a is formed to be connected to each other, the upper contact pattern 11a and the lower contact pattern 12a are rolled together to form the upper contact portion 11 and the lower contact portion 12 in a winding shape, and thus It has a twisted shape as shown in (b).
  • the terminal of the inspection circuit board contacts the lower contact portion 12 from the lower direction to the upper direction
  • the terminal of the inspection circuit board is sequentially contacted from the inner portion to the outer portion of the winding shape to elastically support the contact in the lower direction.
  • the connecting portion 13 electrically connects the upper contact portion 11 and the lower contact portion 12, so that the upper contact portion 11, the connecting portion 13, and the lower contact portion 12 form one conductive line in the vertical direction. It becomes possible to use for the inspection of a semiconductor element by doing so.
  • the pin body 14 is formed between the upper contact portion 11 and the lower contact portion 12 so that the connecting portion 13 is accommodated therein to support the upper contact portion 11 and the lower contact portion 12.
  • the pin body 14 is made of an insulating material having elasticity, for example, a silicon material.
  • a thin metal plate is prepared and the metal thin plate is patterned to form a base pattern 100a as shown in FIG. 5A.
  • the metal thin plate may be provided with a material having conductivity, but the conductivity may be formed through a plating process to be described later, and the conductivity of the metal thin plate may not be essential.
  • the material of the metal sheet may be formed of copper or a copper alloy, for example BeCu.
  • an etching method or a stamping method is applied as an example of the metal thin plate patterning method.
  • the base pattern 100a formed through the patterning process of the thin metal plate may include a plurality of upper contact patterns 11a, a plurality of lower contact patterns 12a, and corresponding upper portions.
  • the connection pattern 13a connects the contact pattern 11a and the lower contact pattern 12a.
  • the configuration of one upper contact pattern 11a, lower contact pattern 12a, and a connection pattern 13a connecting the same is as shown in FIG. 4A, and is shown in FIG. 5A.
  • the connection pattern 13a has a shape that is curved in the horizontal direction.
  • the plurality of upper contact patterns 11a are formed to be spaced apart from each other in the horizontal direction.
  • the plurality of lower contact patterns 12a are formed to be spaced apart from each other in the horizontal direction while being spaced apart from the upper contact pattern 11a in the vertical direction.
  • the base pattern 100a may be configured to simultaneously perform subsequent operations using the plurality of upper contact patterns 11a, the plurality of lower contact patterns 12a, and the connection pattern 13a, respectively. And an upper support pattern 121 connected to the upper connection pattern 123, and a lower support pattern 122 connected to each of the lower contact patterns 12a and the lower connection pattern 124.
  • the plating process is performed to improve the conductivity of the base pattern 100a.
  • the nickel plating and gold plating are sequentially performed.
  • the upper and lower directions are rolled around the axis such that each of the upper contact patterns 11a and each of the lower contact patterns 12a have a winding shape.
  • the upper contact portion 11, the lower contact portion 12 and the connecting portion 13 are formed, respectively.
  • the connection part 13 is formed in a twisted shape in which the connection pattern 13a is rolled together.
  • the upper contact pattern 11a and the lower contact pattern 12a corresponding to each other may be rolled about the same axis in the vertical direction to form the upper contact portion 11 and the lower contact portion 12 at positions corresponding to the vertical direction.
  • the upper contact portion 11 when the upper contact portion 11, the lower contact portion 12 and the connecting portion 13 is formed, as shown in (c) of FIG. 5, the upper surface of each upper contact portion 11, and The insulating body 110 is formed such that the lower surface of the lower contact portion 12 is exposed in the upper direction and the lower direction.
  • the insulating main body 110 is formed such that the connecting portion 13 can be accommodated therein to the extent that the lower portion of the upper contact portion 11 and the upper portion of the lower contact portion 12 are covered. Yes.
  • the base pattern 100a illustrated in FIG. 5B may be installed in a mold, and then the liquid silicone may be injected and then cured to form the insulating body 110.
  • the upper surface of the upper contact portion 11 and the lower surface of the lower contact portion 12 are exposed to the outside of the insulating body 110, the remaining portion of the upper contact portion 11, of the lower contact portion 12
  • the remaining part and the connection part 13 are positioned inside the insulating body 110.
  • the upper connection pattern 123 and the lower connection pattern through laser cutting or the like along the cutting lines C1 and C2 shown in FIG.
  • the bidirectional conductive pattern module 100 as shown in FIG. 6A can be manufactured.
  • the bidirectional conductive pattern modules 100 and 100 are spaced apart from each other in the transverse direction inside the insulating bodies 110 and 110, respectively. Is formed. At this time.
  • the upper contact portion 11, the lower contact portion 12, and the connection portion 13 of the honeycomb constitute one bidirectional conductive pin 10 and form one conductive line in the vertical direction.
  • the semiconductor test socket having the plurality of conductive patterns in the horizontal direction and the depth direction can be configured.
  • one bidirectional conductive pin 10 as shown in FIG. 6B can be manufactured.
  • One bidirectional conductive pin 10 manufactured as described above may replace the existing pogo pin.
  • FIGS. 7 to 11 illustrate examples of various types of base patterns 100a.
  • the technical idea according to the present invention is as described above, and various modifications and other modifications of the base pattern 100a illustrated in FIGS. 7 to 11 are also included in the technical idea of the present invention. That is, those skilled in the art will be able to manufacture the base pattern 100a according to various modifications within the scope of the technical idea of the present invention in addition to the embodiments illustrated in the present invention.
  • FIG. 10 illustrates an example in which the upper contact portion 11 and the lower contact portion 12 are changed in shape according to the shape of the upper contact pattern 11a and the lower contact pattern 12a.
  • the inner support pattern 15a when the inner support pattern 15a is formed from the upper contact pattern 11a to the lower side, the insulating main body 110 or the pin body 14 is formed in FIG. 11.
  • the inner support 15 is formed as shown in (b).
  • the inner support pattern 15a may be formed together in the patterning process of the metal sheet in the exaggeration of the formation of the base pattern 100a through the patterning of the metal sheet.
  • the bidirectional conductive pin 10 ′ includes an upper contact 11 ′, a lower contact 12 ′ and a connection 13 ′.
  • the bidirectional conductive pin 10 ′ may include an internal support 15 ′ and a pin body 14.
  • the upper contact pattern 11a ′ is formed to be stepped in the horizontal direction. Accordingly, when the upper contact pattern 11a 'is rolled up in an up-and-down direction in a spring shape to form the upper contact portion 11', as shown in FIG. 12 (b), the upper contact portion 11 ' The inner curled portion projects upwards from the outer curled portion. That is, as shown in FIG. 12B, the upper contact portion 11 ′ is stepped radially outward.
  • the inner curled portion first contacts and moves downward, and the outer curled portion further contacts to make more stable contact and elastic contact. This becomes possible.
  • the upper contact pattern 11a ′ is formed to be stepped in the horizontal direction, but as in the embodiment illustrated in FIGS. 10B, 10C, and 10D. Since the upper contact pattern 11a ′ is formed to have a different width in the vertical direction, the upper contact portion 11 ′ may be formed to have a shape protruding upward toward the inner side.
  • the lower contact pattern 12a ′ may be stepped in the horizontal direction. Accordingly, when the lower contact pattern 12a 'is rolled up in an up-and-down direction to form a lower contact part 12', as shown in FIG. 12 (b), the lower contact part 12 ' The inner curled portion projects outward from the outer curled portion. That is, as shown in FIG. 12B, the lower contact portion 12 ′ is stepped radially outward.
  • the inner curled portion first contacts and moves downward, and the outer curled portion further contacts to make more stable contact and elasticity. Contact is possible.
  • the lower contact pattern 12a ′ is formed to be stepped in the horizontal direction, but as in the embodiment illustrated in FIGS. 10B, 10B, and 10D. Since the lower contact pattern 12a ′ is formed to have a different width in the vertical direction, the lower contact part 12 ′ may be formed to have a shape protruding downward toward the inner side.
  • the bidirectional conductive pin 10 ′′ according to the present invention includes an upper contact 11 ′′, a lower contact 12 ′′ and a connection 13 ′′. 13 illustrates an example in which the inner support 15 'is not provided.
  • the pin body 14 is not formed, and the connecting portion 13 ′′ is the upper contact 11 ′′ between the upper contact 11 ′′ and the lower contact 12 ′′.
  • the connection pattern 13a ′′ is formed to have a predetermined width in the horizontal direction, through which the upper contact pattern 11a ′′ and the lower contact pattern 12a ′ are formed.
  • the connection pattern 13a' ' is also dried together, and the connection part 13' 'formed by the connection pattern 13a' 'is illustrated in FIG.
  • it has a cylindrical shape to support the upper contact portion 11 '' and the lower contact portion 12 '' in the vertical direction.
  • connection portion 13 '' formed by the connection pattern 13a '' has a cylindrical shape or is provided so as to form only a part of the cylinder. It can be formed in the width of.
  • connection part 13a connection pattern
  • pin body 15 internal support
  • the present invention can be applied to the inspection of the electrical performance or burn-in test in the manufacturing process of semiconductor devices, printed circuit boards, LCD displays and the like.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
PCT/KR2016/012421 2016-05-30 2016-11-01 양방향 도전성 핀, 양방향 도전성 패턴 모듈 및 그 제조방법 WO2017209357A1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201680001638.4A CN108283014A (zh) 2016-05-30 2016-11-01 双向导电引脚、双向导电图案模块及其制造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2016-0066293 2016-05-30
KR20160066293 2016-06-02
KR1020160134778A KR20170137592A (ko) 2016-06-02 2016-10-18 양방향 도전성 핀, 양방향 도전성 패턴 모듈 및 그 제조방법
KR10-2016-0134778 2016-10-18

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WO2017209357A1 true WO2017209357A1 (ko) 2017-12-07

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TW (1) TWI635283B (zh)
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KR20070111847A (ko) * 2006-05-19 2007-11-22 (주)이노아토 최종시험공정에서의 반도체 특성 시험용 소켓 핀
KR20100054099A (ko) * 2008-11-13 2010-05-24 니혼덴산리드가부시키가이샤 검사용 프로브
KR20110045544A (ko) * 2009-10-27 2011-05-04 주식회사 오킨스전자 코일타입 콘택트 핀 제작용 판재 및 이에 의해 제조되는 코일타입 콘택트 핀
KR20120032500A (ko) * 2011-12-05 2012-04-05 박상량 탐침부 연결형 포고핀 및 그 제조방법
KR101416266B1 (ko) * 2014-05-23 2014-08-07 주식회사 엔에스티 반도체소자 검사용 전기 연결 소자

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* Cited by examiner, † Cited by third party
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WO2020217561A1 (ja) * 2019-04-26 2020-10-29 株式会社日本マイクロニクス 電気的接触子及び電気的接続装置
JP2020180928A (ja) * 2019-04-26 2020-11-05 株式会社日本マイクロニクス 電気的接触子及び電気的接続装置

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