WO2017206809A1 - 光学临近效应的修正方法及系统 - Google Patents

光学临近效应的修正方法及系统 Download PDF

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Publication number
WO2017206809A1
WO2017206809A1 PCT/CN2017/086110 CN2017086110W WO2017206809A1 WO 2017206809 A1 WO2017206809 A1 WO 2017206809A1 CN 2017086110 W CN2017086110 W CN 2017086110W WO 2017206809 A1 WO2017206809 A1 WO 2017206809A1
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target point
segment
length
edge
corner
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PCT/CN2017/086110
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English (en)
French (fr)
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万金垠
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无锡华润上华半导体有限公司
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Priority to US16/305,308 priority Critical patent/US10816893B2/en
Publication of WO2017206809A1 publication Critical patent/WO2017206809A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]

Definitions

  • the present invention relates to the field of semiconductor technology, and in particular, to a method and system for correcting optical proximity effects.
  • the key dimensions of the semiconductor process such as active layer level, gate oxide level, and metal wiring level are getting smaller and smaller, which is close to or even smaller than the wavelength of light used in the lithography process. Therefore, in the lithography process, due to the diffraction and interference of light, there is a certain deformation and deviation between the lithographic pattern obtained on the actual silicon wafer and the mask pattern.
  • the correction system for the optical proximity effect is a software system in the lithography machine that is calculated and executed by the hardware system in the lithography machine.
  • the hardware system in the lithography machine includes, for example, a central processing unit, a memory (including a nonvolatile memory and a volatile memory), and a lithography actuator.
  • the software system is stored in the non-volatile memory.
  • the software system When performing the lithography task, the software system first reads the software system from the non-volatile memory into the volatile memory, and then the processor The memory is read and interpreted as an instruction, and the processor operates on the instruction.
  • the traditional correction method is to set the target point at the end of the segment far from the corner to ensure the size of the figure as a whole, and to prevent the line from becoming shorter and thinner. However, a large corner arc will appear at the corners.
  • a method of correcting optical proximity effects comprising:
  • the corner For a segment with a corner, the corner includes a segment edge and an adjacent edge forming a corner relationship with the segment edge, and one end of the segment edge is a vertex of the corner and the other end is an outer end point, according to The following principles set the target point:
  • the target point is set at an outer end position of the edge of the segment
  • the target point is set between the vertex of the corner and the outer end of the edge of the segment, and the smaller the length of the adjacent edge, the farther the target point is.
  • the design pattern is adjusted according to the simulation error of the target point until the simulated lithography result generated according to the adjusted design pattern meets the design goal.
  • a correction system for optical proximity effects comprising:
  • segmentation module for parsing and dividing the outer edge of the design graphic to obtain a segment for processing
  • a segment processing module configured to set a target point according to a preset principle for a segment with a corner; wherein the corner includes a segment edge and an adjacent edge forming a corner relationship with the segment edge, the segment edge One end is a vertex of the corner, and the other end is an outer end point;
  • the preset principle is: when the length of the adjacent side is greater than a preset length, the target point is set at an outer end position of the segment edge; When the length of the adjacent side is less than or equal to the preset length, the target point is set between the vertex of the corner and the outer end of the edge of the segment, and the smaller the length of the adjacent edge, the farther the target point is.
  • the outer endpoint position is: when the length of the adjacent side is greater than a preset length, the target point is set at an outer end position of the segment edge; When the length of the adjacent side is less than or equal to the preset length, the target point is set between the vertex of the corner and the outer end of the edge of the segment,
  • the adjustment module adjusts the design pattern according to the simulation error of the target point until the simulated lithography result generated according to the adjusted design pattern meets the design goal.
  • the target point is set between the vertex of the corner and the end of the edge of the segment, which can effectively improve the rounding performance at the corner, and also ensure the overall shape and size of the graphic.
  • the adjacent side is long, the boundary of the pattern obtained by analog lithography is steep, and the rounded corners are acceptable. Therefore, the overall corner rounding performance is improved.
  • 1 is a flow chart of an optical proximity effect correction method of an embodiment
  • Figure 2 shows a segment with lobes and concave corners
  • Figure 3a shows the case where the target point is placed when the adjacent side is long
  • Figure 3b shows the case where the target point is placed when the adjacent side is short
  • FIG. 4 is a block diagram of an optical proximity effect correction system module of an embodiment.
  • the method of the following embodiments relates to a method of how to place a target point in the optical proximity effect correction.
  • the method of optical proximity effect correction includes many steps, and the placement of the target point is only one of the aspects, and the steps are not all performed in the following embodiments. A detailed description, but only the content associated with the target point placement.
  • FIG. 1 is a flow chart of an optical proximity effect correction method of an embodiment, the method comprising the following steps:
  • Step S101 Performing analytical segmentation on the outer side of the design graphic to obtain a segment for processing. Since the design graphics are generally more complex, they need to be segmented into small pieces for processing. The segmentation pattern obtained after segmentation is relatively simple and easy to handle.
  • the division manner may include, for example, a fixed length division or the like.
  • Step S102 For the segment with the corner, the target point is set according to a preset principle.
  • the segmented segments are strip segments, and some are segments with corners.
  • the strip segment does not suffer from the problem of rounding corners, and this embodiment is mainly directed to segments with corners.
  • the corner For a segment with a corner, the corner includes a segment edge and an adjacent edge forming a corner relationship with the segment edge, one end of the segment edge being the vertex of the corner and the other end being the outer end point.
  • the segment with the corners may be a segment with a concave corner or a segment with a lobed corner, and is generally a right angle or an acute or obtuse angle.
  • segment SEG1 has a lobed corner 10 and segment SEG2 has a concave corner 20.
  • segment edge SEG-L1 and the neighboring edge L3 of the segment SEG1 form a lobe 10
  • segment edge SEG-L2 and the neighboring edge L3 of the segment SEG2 form a concave corner 20.
  • the target point is set at an outer end position of the edge of the segment
  • the target point is set between the vertex of the corner and the outer end of the edge of the segment, and the smaller the length of the adjacent edge, the farther the target point is.
  • the outer endpoint location is
  • Step S103 Adjust the design pattern according to the simulation error of the target point until the design goal is met. Once the target point is set, the steps including the simulated lithography result can be performed, the lithography result is compared with the design target at the target point, and the difference is calculated and the design pattern is adjusted according to the difference. After the loop processing, until the simulated lithography results meet the design goal, that is, the lithography results are not different between the target point and the design target.
  • the placement position of the target point is adaptively selected according to the length of the adjacent side, and the circular arc expression at the corner can be enhanced.
  • Step S102 will be specifically described below with a segment having a concave angle.
  • the segment edge 101 and the adjacent edge 102 form a concave corner.
  • the boundary 105 of the simulated lithographic pattern generally has a steep slope.
  • the target point is set at the outer end point 104 of the segment, on the one hand, the correction error at the target point can be avoided, and the lithographic pattern of the entire segment does not exhibit the deviation of the overall shape and size, and on the other hand, the boundary 105 has Steep slopes, rounding at the corners will not be too bad.
  • the segment edge 101 and the adjacent edge 102 form a concave corner.
  • the neighboring edge is shorter, that is, the neighboring edge is smaller than the preset length, if the target point is continuously set at the outer end point 104 of the segment, the boundary 106 of the simulated lithographic pattern will have a gentle slope. At this point, the arc at the corners will be larger and the rounding at the corners will behave too badly.
  • the target point when the adjacent side is short, the target point is set between the vertex 103 of the corner and the outer end point 104, such as point P in FIG. 3b.
  • the boundary 107 of the simulated lithographic pattern is obtained. It can be seen that the boundary 107 has a better corner representation than the boundary 106, but at the same time there is little deviation in the correction at the outer end point 104.
  • the target point is set between the vertex 103 and the outer end point 104 of the corner, which can effectively improve the rounding performance at the corner, and at the same time ensure the overall shape and size of the graphic.
  • the way the segment with the lobes sets the target point is similar to the above. It can be understood that the corners are other non-right angles, and the target point can also be set by referring to the above method.
  • the target point is set between the vertex of the corner and the end of the segment, which can effectively improve the degree of rounding of the corner.
  • the preset length is generally set to the minimum value of the design rule.
  • the target point may approach closer to the corner vertices (or away from the outer end points of the segments).
  • the system of the following embodiment relates to the problem of how to place the target point in the optical proximity effect correction.
  • the system of the optical proximity effect correction includes many modules, and the placement of the target point is only one of them, and the modules are not listed in the following embodiments. Out or a detailed description, but only the content associated with the target point placement.
  • the processor can perform processing including graphic segmentation, segment processing, calculating the position of the target point, and adjusting the position of the target point according to the instruction operation. The result of the processing can be fed back to the lithography actuator for specific execution.
  • the system includes a segmentation module 100, a segment processing module 200, and an adjustment module 300.
  • the above modules are functional modules in the software system, corresponding to the functional architecture of the software. Specifically, it is processed by the central processing unit.
  • the segmentation module 100 is configured to perform parsing and segmentation on the outer side of the design graphic to obtain a segment for processing.
  • the segment processing module 200 is configured to set a target point according to a preset principle for a segment with a corner.
  • the corner includes a segment edge and an adjacent edge forming a corner relationship with the segment edge.
  • One end of the segment edge is a vertex of the corner and the other end is an outer end point;
  • the preset principle is: When the length of the adjacent edge is greater than the preset length, the target point is set at the outer end position of the edge of the segment; when the length of the adjacent edge is less than or equal to the preset length, the target point is set at the corner The smaller the length of the adjacent edge between the vertex and the outer edge of the segment edge, the farther the target point is from the outer end position.
  • the adjustment module 300 adjusts the design pattern according to the simulation error of the target point until the design goal is met.
  • the segmentation module 100 divides the complex design graphics into small segments for processing.
  • the segmentation pattern obtained after segmentation is relatively simple and easy to handle.
  • the division manner may include, for example, a fixed length division or the like.
  • the specific processing of the fragment processing module 200 mainly includes placing a target point, and the manner of placing can refer to the above-mentioned optical proximity effect correction method.
  • the adjustment module 300 can perform the simulation lithography result, compare the result with the design target at the target point, and then adjust the design graphic according to the difference.
  • the loop is then processed until the simulated lithography results meet the design goals.
  • the resulting image can be used for masking.

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Abstract

一种光学临近效应的修正方法，包括：对设计图形的外边进行解析分割获得用于处理的片段；对于带有边角的片段，所述边角包括片段边（101）和与所述片段边形成边角关系的邻边（102），根据以下原则设定目标点：当所述邻边（102）的长度大于预设长度时，将目标点设于所述片段边的外端点（104）位置；当所述邻边（102）的长度小于或等于预设长度时，将目标点设于所述边角的顶点（103）和所述片段边的外端点（104）之间，且邻边（102）的长度的越小，目标点越远离所述外端点（104）位置；根据目标点的模拟误差调整设计图形直到符合设计目标。

Description

光学临近效应的修正方法及系统
【技术领域】
本发明涉及半导体技术领域，特别是涉及一种光学临近效应的修正方法及系统。
【背景技术】
随着半导体技术的发展，半导体工艺中关键层次比如有源区层次、栅氧层次、金属连线层次的关键尺寸越来越小，已经接近甚至小于光刻工艺中所使用的光波波长。因此光刻过程中，由于光的衍射和干涉作用，实际硅片上得到的光刻图形与掩膜板图形之间存在一定的变形和偏差。
光刻中的这种误差直接影响电路性能和生产成品率。为尽量消除这种误差，一种有效的方法是采取光学临近效应修正。光学临近效应的修正系统是光刻机台中的软件系统，由光刻机台中的硬件系统进行计算和执行。光刻机台中硬件系统例如包括中央处理器、存储器（包括非易失性存储器和易失性存储器）和光刻执行机构。其中软件系统存储在非易失性存储器中，在执行光刻任务时，首先由光刻机台将软件系统从非易失性存储器中读取到易失性存储器中，然后由处理器从易失性存储器中读取并解释为指令，处理器根据指令进行运算。传统的修正方式都是将目标点设置在片段中远离边角的端点处，以从整体上保证图形的尺寸，防止出现线条变短、变细的情况。但边角处会出现比较大的角落圆弧。
【发明内容】
基于此，有必要提供一种光学临近效应的修正方法，可以改善角落圆弧表现。
一种光学临近效应的修正方法，包括：
对设计图形的外边进行解析分割获得用于处理的片段；
对于带有边角的片段，所述边角包括片段边和与所述片段边形成边角关系的邻边，所述片段边的一端为所述边角的顶点、另一端为外端点，根据以下原则设定目标点：
当所述邻边的长度大于预设长度时，将目标点设于所述片段边的外端点位置；
当所述邻边的长度小于或等于预设长度时，将目标点设于所述边角的顶点和所述片段边的外端点之间，且邻边的长度的越小，目标点越远离所述外端点位置；
根据目标点的模拟误差，调整设计图形，直到根据调整后的设计图形生成的模拟光刻结果符合设计目标。
一种光学临近效应的修正系统，包括：
分割模块，用于对设计图形的外边进行解析分割获得用于处理的片段；
片段处理模块，用于对于带有边角的片段，根据预设原则设定目标点；其中所述边角包括片段边和与所述片段边形成边角关系的邻边，所述片段边的一端为所述边角的顶点、另一端为外端点；所述预设原则为：当所述邻边的长度大于预设长度时，将目标点设于所述片段边的外端点位置；当所述邻边的长度小于或等于预设长度时，将目标点设于所述边角的顶点和所述片段边的外端点之间，且邻边的长度的越小，目标点越远离所述外端点位置；
调节模块，根据目标点的模拟误差，调整设计图形，直到根据调整后的设计图形生成的模拟光刻结果符合设计目标。
上述方法和系统，当邻边较短时，将目标点设置在边角的顶点和片段边的端点之间，可以有效改善边角处的圆化表现，同时也能保证图形的整体形状和尺寸。当邻边较长时，模拟光刻所得的图形的边界较陡，边角圆化表现尚可。因此整体的边角圆化表现得到改善。
【附图说明】
图1为一实施例的光学临近效应修正方法的流程图；
图2表示了带有凸角和凹角的片段；
图3a为邻边较长时放置目标点的情况；
图3b为邻边较短时放置目标点的情况；
图4为一实施例的光学临近效应修正系统模块简图。
【具体实施方式】
为使本发明的目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
以下结合附图和实施例进行进一步说明。
以下实施例的方法涉及光学临近效应修正中关于目标点如何放置的方法，光学临近效应修正的方法包括很多步骤，目标点的放置只是其中的一个方面，以下实施例中不会将这些步骤全部进行详细介绍，而只说明与目标点放置相关联的内容。
图1为一实施例的光学临近效应修正方法的流程图，该方法包括如下步骤：
步骤S101：对设计图形的外边进行解析分割获得用于处理的片段。由于设计图形一般比较复杂，需要将其进行分割成一些小的片段进行处理。分割后所获得的片段图形比较简单，易于处理。分割方式可以包括例如定长度分割等。
步骤S102：对于带有边角的片段，根据预设的原则设定目标点。经过分割后的片段，有的是条形片段，有的则是带有边角的片段。条形片段不会出现边角圆化的问题，本实施例主要针对带有边角的片段。对于带有边角的片段，所述边角包括片段边和与所述片段边形成边角关系的邻边，所述片段边的一端为所述边角的顶点、另一端为外端点。
带有边角的片段可以是带有凹角的片段或者带有凸角的片段，且一般为直角，也可以为锐角或钝角。
参考图2，片段SEG1带有凸角10，片段SEG2带有凹角20。其中，片段SEG1的片段边SEG-L1和邻边L3形成凸角10，片段SEG2的片段边SEG-L2和邻边L3形成凹角20。
设定目标点的预设的原则如下：
当所述邻边的长度大于预设长度时，将目标点设于所述片段边的外端点位置；
当所述邻边的长度小于或等于预设长度时，将目标点设于所述边角的顶点和所述片段边的外端点之间，且邻边的长度越小，目标点越远离所述外端点位置。
步骤S103：根据目标点的模拟误差调整设计图形直到符合设计目标。设定好目标点后，就可以进行包括模拟光刻结果的步骤，在目标点处将光刻结果与设计目标进行对比，然后计算差异并根据差异调整设计图形。之后循环处理，直到模拟的光刻结果符合设计目标，即光刻结果在目标点处和设计目标不存在差异。
上述方法中，根据邻边的长度，适应性地选择目标点的放置位置，可以增强边角处的圆弧表现。
以下以带有凹角的片段来具体对步骤S102进行说明。
如图3a所示，片段边101和邻边102形成凹角。当邻边较长时，即邻边大于预设长度时，模拟的光刻图形的边界105一般会具有较陡的坡度。此时，将目标点设置在片段的外端点104处，一方面可以避免目标点处的修正误差，保证整个片段的光刻图形不出现整体形状和尺寸的偏差，另一方面由于边界105具有较陡的坡度，在边角处的圆化也不会有太差的表现。
如图3b所示，片段边101和邻边102形成凹角。当邻边较短时，即邻边小于预设长度时，若继续将目标点设置在片段的外端点104处，模拟的光刻图形的边界106会具有较平缓的坡度。此时，边角处的圆弧会较大，边角处的圆化表现太差。
基于此，本实施例中，当邻边较短时，将目标点设置在边角的顶点103和外端点104之间，例如图3b中的P点。当基于目标点的偏差进行修正时，得到模拟的光刻图形的边界107。可以看到，边界107相比边界106具有更好的边角表现，但同时在外端点104处的修正却几乎没有偏差。
因此，当邻边较短时，将目标点设置在边角的顶点103和外端点104之间，可以有效改善边角处的圆化表现，同时也能保证图形的整体形状和尺寸。
带有凸角的片段设置目标点的方式与上述类似。可以理解，边角为其他非直角的情况，也可以参考上述方法设置目标点。
在邻边长度小于预设长度时，将目标点设置在边角顶点和片段的端点之间，可以有效改善边角圆化程度。其中的预设长度一般设定为设计规则的最小值。
进一步地，随着邻边长度在其预设长度以下的范围内越来越小时，目标点可以向更加靠近边角顶点（或者远离片段的外端点）的方向靠近。在一个具体的实施方式中，对于邻边的长度X，片段边的长度L以及预设长度N，目标点距离边角顶点的长度Y采用以下公式确定：Y=X*(L/N)。X≤N即对应邻边长度小于预设长度。
当X=N时，Y=L，即目标点距离边角顶点的长度等于片段边的长度，目标点位于片段边的外端点处。当X＜N时，Y＜L，即目标点位于边角顶点和片段边的外端点之间。且随着邻边长度X的减小，长度Y也减小，即目标点更加靠近边角顶点。
在其他实施例中，也可以采用其他符合变化趋势要求的函数关系，而不限于上述。
基于上述，还提供一种光学临近效应的修正系统。以下实施例的系统涉及光学临近效应修正中关于目标点如何放置的问题，光学临近效应修正的系统包括很多模块，目标点的放置只是其中的一个方面，以下实施例中不会将这些模块全部列出或进行详细介绍，而只说明与目标点放置相关联的内容。处理器根据指令运算即可完成包括图形分割、片段处理、计算目标点位置以及调节目标点位置等处理。处理的结果可以反馈给光刻执行机构进行具体的执行。如图4所示，该系统包括分割模块100、片段处理模块200以及调节模块300。上述模块是软件系统中的功能模块，对应于软件的功能架构。具体都由中央处理器运算处理。
分割模块100用于对设计图形的外边进行解析分割获得用于处理的片段。
片段处理模块200用于对于带有边角的片段，根据预设原则设定目标点。其中所述边角包括片段边和与所述片段边形成边角关系的邻边所述片段边的一端为所述边角的顶点、另一端为外端点；所述预设原则为：当所述邻边的长度大于预设长度时，将目标点设于所述片段边的外端点位置；当所述邻边的长度小于或等于预设长度时，将目标点设于所述边角的顶点和所述片段边的外端点之间，且邻边的长度的越小，目标点越远离所述外端点位置。
调节模块300根据目标点的模拟误差调整设计图形直到符合设计目标。
其中分割模块100将复杂的设计图形分割成一些小的片段进行处理。分割后所获得的片段图形比较简单，易于处理。分割方式可以包括例如定长度分割等。
片段处理模块200具体的处理主要包括放置目标点，放置的方式可以参考上述光学临近效应的修正方法。
调节模块300在片段处理模块200设定好目标点后，就可以进行包括模拟光刻结果，在目标点处将结果与设计目标进行对比，然后根据差异调整设计图形。之后循环处理，直到模拟的光刻结果符合设计目标。得到的图像可用于掩膜。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (14)

  1. 一种光学临近效应的修正方法，包括：
    对设计图形的外边进行解析分割获得用于处理的片段；
    对于带有边角的片段，所述边角包括片段边和与所述片段边形成边角关系的邻边，所述片段边的一端为所述边角的顶点、另一端为外端点，根据以下原则设定目标点：
    当所述邻边的长度大于预设长度时，将目标点设于所述片段边的外端点位置；
    当所述邻边的长度小于或等于预设长度时，将目标点设于所述边角的顶点和所述片段边的外端点之间，且邻边的长度的越小，目标点越远离所述外端点位置；及
    根据目标点的模拟误差，调整设计图形，直到根据调整后的设计图形生成的模拟光刻结果符合设计目标。
  2. 根据权利要求1所述的方法，其中，所述边角为凹角或凸角。
  3. 根据权利要求1所述的方法，其中，所述边角为锐角、直角或钝角。
  4. 根据权利要求1所述的方法，其中，所述预设长度为设计规则的最小尺寸。
  5. 根据权利要求1所述的方法，其中，对于邻边的长度X，片段边的长度L以及预设长度N，目标点距离边角顶点的长度Y采用以下公式确定：Y=X*(L/N)。
  6. 根据权利要求1所述的方法，其中，所述对设计图形的外边进行解析分割获得用于处理的片段的步骤中，采用定长度分割方法。
  7. 根据权利要求1所述的方法，其中，所述根据目标点的模拟误差，调整设计图形，直到根据调整后的设计图形生成的模拟光刻结果符合设计目标的步骤包括：
    在设定目标点后，进行模拟光刻，获得目标点处的模拟光刻结果；
    将目标点处的模拟光刻结果与目标点处的设计目标进行对比，计算差异；
    根据差异调整设计图形；
    重复所述模拟光刻、计算差异、调整设计图形的步骤，直到模拟光刻结果在目标点处和设计目标不存在差异。
  8. 一种光学临近效应的修正系统，包括：
    分割模块，用于对设计图形的外边进行解析分割获得用于处理的片段；
    片段处理模块，用于对于带有边角的片段，根据预设原则设定目标点；其中所述边角包括片段边和与所述片段边形成边角关系的邻边，所述片段边的一端为所述边角的顶点、另一端为外端点；所述预设原则为：当所述邻边的长度大于预设长度时，将目标点设于所述片段边的外端点位置；当所述邻边的长度小于或等于预设长度时，将目标点设于所述边角的顶点和所述片段边的外端点之间，且邻边的长度的越小，目标点越远离所述外端点位置；
    调节模块，根据目标点的模拟误差，调整设计图形，直到根据调整后的设计图形生成的模拟光刻结果符合设计目标。
  9. 根据权利要求8所述的系统，其中，所述边角为凹角或凸角。
  10. 根据权利要求8所述的系统，其中，所述边角为锐角、直角或钝角。
  11. 根据权利要求8所述的系统，其中，所述预设长度为设计规则的最小尺寸。
  12. 根据权利要求8所述的系统，其中，所述片段处理模块在确定目标点位置时，对于邻边的长度X，片段边的长度L以及预设长度N，目标点距离边角顶点的长度Y采用以下公式确定：Y=X*(L/N)。
  13. 根据权利要求8所述的系统，其中，所述分割模块在进行解析分割时，采用定长度分割。
  14. 根据权利要求8所述的系统，其中，所述调节模块具体用于：
    在设定目标点后，进行模拟光刻，获得目标点处的模拟光刻结果；
    将目标点处的模拟光刻结果与目标点处的设计目标进行对比，计算差异；
    根据差异调整设计图形；
    重复所述模拟光刻、计算差异、调整设计图形的步骤，直到模拟光刻结果在目标点处和设计目标不存在差异。
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