WO2017206786A1 - 一种电感耦合等离子体装置 - Google Patents

一种电感耦合等离子体装置 Download PDF

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Publication number
WO2017206786A1
WO2017206786A1 PCT/CN2017/085859 CN2017085859W WO2017206786A1 WO 2017206786 A1 WO2017206786 A1 WO 2017206786A1 CN 2017085859 W CN2017085859 W CN 2017085859W WO 2017206786 A1 WO2017206786 A1 WO 2017206786A1
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Prior art keywords
coupling plate
dielectric coupling
electric field
inductively coupled
coupled plasma
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PCT/CN2017/085859
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English (en)
French (fr)
Inventor
魏钰
刘军
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to US15/736,278 priority Critical patent/US10079134B2/en
Publication of WO2017206786A1 publication Critical patent/WO2017206786A1/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3344—Problems associated with etching isotropy

Definitions

  • the present invention relates to the field of display technologies, and in particular to an inductively coupled plasma device.
  • ICP devices are widely used in plasma etching processes.
  • the principle of plasma etching is that the reaction gas is ionized to generate plasma under the excitation of an electric field.
  • the plasma contains active particles such as atoms, molecules and radicals of electrons, ions and excited states. These active particles can be The layer of etched material reacts to effect patterning of the layer of material to be etched.
  • an unevenly distributed electric field in the reaction chamber causes the plasma in the reaction chamber to also be in an unevenly distributed state, thereby affecting the uniformity of etching.
  • At least one object of the present invention is to provide an inductively coupled plasma device capable of improving etching uniformity.
  • an inductively coupled plasma device comprising: a reaction chamber, a dielectric coupling plate, and a coil disposed above the dielectric coupling plate.
  • the dielectric coupling plate includes at least two layers.
  • the dielectric coupling plate includes a plurality of regions in each of which an electric field adjustment structure is disposed, the electric field adjustment structure being located between at least two layers of the dielectric coupling plate.
  • the electric field conditioning structure is for adjusting an electric field strength entering the reaction chamber through each region of the dielectric coupling plate.
  • the material of the electric field adjustment structure may be an absorbing material.
  • the absorbing material can absorb 1 to 30% of the magnetic field energy generated by the coil.
  • the absorbing material may be a metal, and the electric field adjusting structure may be a mesh structure.
  • the absorbing material may be carbon fiber, and the electric field adjusting structure may be a block structure.
  • the electric field adjusting structure may be disposed on a surface of at least one of at least two layers of the dielectric coupling plate.
  • At least one of at least two layers of the dielectric coupling plate may be provided with a groove, and the electric field adjusting structure may be disposed in the groove.
  • the plurality of regions of the dielectric coupling plate may be arranged in a matrix.
  • the plurality of regions of the dielectric coupling plate may include a first region located at a center, a second region surrounding the first region, and a third region located outside the second region.
  • the shape of the dielectric coupling plate may be a rectangle
  • the peripheral contour of the second region is a rectangle
  • the third region may include four first sub-regions and four second sub-regions.
  • Each of the first sub-regions may be adjacent to one side of the second region, and the sides of the first sub-region adjacent to each other and the sides of the second region are equal in length.
  • Each of the second sub-regions may be located at a top corner of the dielectric coupling plate.
  • the electric field intensity entering the reaction chamber from each region of the dielectric coupling plate can be divided by dividing the dielectric coupling plate into a plurality of regions and providing an electric field adjusting structure in each region Independent adjustment improves the uniformity of the electric field strength entering the reaction chamber through the dielectric coupling plate, thereby improving the uniformity of the plasma in the reaction chamber, thereby improving the uniformity of the etching.
  • the electric field adjusting structure is disposed between the two layers of the dielectric coupling plate, which can avoid affecting the formation of plasma in the reaction chamber, and can also avoid the extreme difference with the coil, resulting in abnormal discharge.
  • FIG 1 schematically shows an inductively coupled plasma device of the prior art
  • FIG. 2 is a schematic structural view of an inductively coupled plasma device according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural view of an inductively coupled plasma device according to another embodiment of the present invention.
  • FIG. 4 is a schematic structural view of an inductively coupled plasma device according to another embodiment of the present invention.
  • FIG. 5 is a view schematically showing a region division manner of a dielectric coupling plate which can be applied to an inductively coupled plasma device according to an embodiment of the present invention
  • FIG. 6A and 6B schematically illustrate a region division manner of a dielectric coupling plate that can be applied to an inductively coupled plasma device according to an embodiment of the present invention.
  • FIG. 7 schematically illustrates a grid-like electric field adjustment structure that can be applied to an inductively coupled plasma device in accordance with an embodiment of the present invention.
  • FIG 1 shows an inductively coupled plasma device of the prior art.
  • the inductively coupled plasma device may include a reaction chamber 01 and a dielectric coupling plate 30.
  • the dielectric coupling plate 30 seals the reaction chamber 01.
  • An air inlet (not shown in FIG. 1) is provided on the dielectric coupling plate 30 for injecting a reaction gas into the reaction chamber 01.
  • a coil 20 is disposed above the dielectric coupling plate 30 and externally connected to the RF power source 10.
  • the RF power source 10 is used to apply a radio frequency current to the coil 20 to cause the coil 20 to produce a varying magnetic field.
  • the varying magnetic field induces an electric field, thereby ionizing the reaction gas injected into the reaction chamber 01 to generate a plasma.
  • the plasma in the reaction chamber 01 is also in an unevenly distributed state, thereby affecting the uniformity of etching.
  • the uniformity of etching is especially important for high generation panel production lines.
  • FIG. 2 is a schematic structural view of an inductively coupled plasma device in accordance with an embodiment of the present invention.
  • an inductively coupled plasma device in accordance with an embodiment of the present invention may include a reaction chamber 01, a dielectric coupling plate 30, and a coil 20 disposed over the dielectric coupling plate 30.
  • the dielectric coupling plate 30 includes at least two layers 31 and 32.
  • the dielectric coupling plate 30 includes a plurality of regions in each of which an electric field adjustment structure 50 is disposed.
  • the electric field conditioning structure 50 is located between at least two layers 31 and 32 of the dielectric coupling plate 30.
  • the electric field adjusting structure 50 is for adjusting the electric field intensity entering the reaction chamber 01 through each region of the dielectric coupling plate 30.
  • the dielectric coupling plate 30 may further include at least one air inlet (not shown in FIG. 2) for injecting a reaction gas into the reaction chamber 01.
  • the coil 20 is connected to a radio frequency power source 10 that causes the coil 20 to generate an induced electric field.
  • a base 80 may be disposed at the bottom of the reaction chamber 01, and an electrostatic chuck 70 for fixing the substrate 60 to be etched is disposed on the base 80.
  • the base 80 may be provided with a small hole (not shown in FIG. 2), and the helium gas is injected from the outside through the small hole to cool the electrostatic chuck 70 and adsorb the electrostatic chuck 70 to the base 80 to fix the static electricity.
  • the role of the chuck 70 is not shown in FIG. 2, and the helium gas is injected from the outside through the small hole to cool the electrostatic chuck 70 and adsorb the electrostatic chuck 70 to the base 80 to fix the static electricity. The role of the chuck 70.
  • the present invention contemplates the connection of the dielectric coupling plate 30 and the reaction chamber 01.
  • the method is not limited as long as the reaction chamber 01 can be sealed.
  • the present inventive concept does not limit the number and shape of the coils 20 disposed above the dielectric coupling plate 30, and the number of the coils 20 may be one or plural.
  • the coil 20 may have a shape including a plurality of ⁇ polygons, or may have a shape including a plurality of ⁇ concentric circles as long as an induced electric field can be generated.
  • the inventive concept does not limit the number of layers of the dielectric coupling plate 30.
  • FIG. 2 shows that the electrical coupling plate 30 includes two layers 31 and 32 (ie, the first dielectric coupling plate 31 and the second dielectric coupling plate 32), the number of layers of the dielectric coupling plate 30 may be more than Two floors.
  • the electric field adjusting structure 50 may be disposed on a surface of at least one of at least two layers 31 and 32 of the dielectric coupling plate 30.
  • the electric field adjusting structure 50 may be disposed on a surface of the first layer dielectric coupling plate 31 facing the second layer dielectric coupling plate 32.
  • the electric field adjustment structure 50 may be disposed on a surface of the second layer of the dielectric coupling plate 32 facing the first layer of the dielectric coupling plate 31.
  • the material of the electric field conditioning structure 50 is an absorbing material.
  • the absorbing material for forming the electric field adjusting structure 50 may absorb only 1% to 30% of the magnetic field energy generated by the coil 20.
  • the absorbing material is a metal and the electric field regulating structure 50 is a lattice structure as shown in FIG.
  • the absorbing material for forming the electric field adjusting structure 50 may be aluminum (Al), copper (Cu), or the like.
  • the mesh density of the metal mesh structure can be set according to different absorbing materials, thereby controlling the ability of the electric field adjusting structure 50 to adjust the electric field.
  • the absorbing material may be carbon fiber and the electric field conditioning structure 50 is a block structure.
  • the carbon fiber may be doped with a metal to improve the electric field adjustment ability of the absorbing material, and the doped metal may be Al, Cu or the like.
  • the block-shaped electric field adjusting structure 50 is simple in manufacturing process with respect to the grid-like electric field adjusting structure 50, and can save manufacturing costs.
  • the dielectric coupling plate 30 is divided into a plurality of regions, and an electric field adjusting structure 50 that independently adjusts an electric field is disposed in each region to allow an electric field to enter the reaction chamber 01 through each region.
  • the intensity is even.
  • the adjustment capability of the electric field adjustment structure 50 disposed in different regions can be independently controlled as needed.
  • the reaction gas is injected into the reaction chamber 01 through the gas inlet of the dielectric coupling plate 30.
  • the RF power generated by the RF generator 10 is transmitted to the coil 20.
  • the electric field adjusting structure 50 located in each region adjusts the electromagnetic field energy passing through the region to different degrees, that is, the induced electric field generated by the electromagnetic field energy is adjusted, so that the induced electric field intensity of each region is uniform, so that the pair is located on the electrostatic chuck 70.
  • the substrate to be etched 60 is etched uniformly.
  • the electric field intensity entering the reaction chamber 01 from each region of the dielectric coupling plate 30 can be independently adjusted, which is improved.
  • the uniformity of the electric field intensity entering the reaction chamber 01 through the dielectric coupling plate 30 improves the uniformity of the plasma in the reaction chamber 01, thereby improving the uniformity of etching of the substrate 60 to be etched.
  • the electric field adjusting structure 50 is disposed between the first layer dielectric coupling plate 31 and the second layer dielectric coupling plate 32, which can avoid affecting the formation of plasma in the reaction chamber 01, and can also avoid the difference with the coil 20. , causing abnormal discharge.
  • FIG. 3 is a schematic structural view of an inductively coupled plasma device according to another embodiment of the present invention.
  • the differences from the foregoing embodiment described with reference to FIG. 2 will be described in detail, and the description of the same portions will be omitted.
  • an inductively coupled plasma device in accordance with an embodiment of the present invention may include a cavity, and a dielectric coupling plate 30 may be disposed inside the cavity.
  • the chamber below the dielectric coupling plate 30 forms a reaction chamber 01, and the dielectric coupling plate 30 seals the reaction chamber 01.
  • An air inlet (not shown in FIG. 3) may be disposed on the dielectric coupling plate 30, and the coil 20 is disposed above the dielectric coupling plate 30 and connected to the RF power source 10 disposed in the upper chamber 02.
  • the housing of the cavity is grounded such that the inductively coupled plasma device is at zero potential.
  • the dielectric coupling plate 30 may include a first layer of dielectric coupling plates 31 and a second layer of dielectric coupling plates 32.
  • FIGS. 2 and 3 are schematic structural views of an inductively coupled plasma device in accordance with another embodiment of the present invention.
  • FIGS. 2 and 3 the differences from the foregoing embodiments described with reference to FIGS. 2 and 3 will be described in detail, and the description of the same portions will be omitted.
  • a groove may be provided in a surface of the second layer dielectric coupling plate 32 facing the first layer dielectric coupling plate 31, and an electric field adjusting structure 50 may be disposed in each groove.
  • a groove may be provided on the surface of the first layer of the dielectric coupling plate 31 facing the second layer of the dielectric coupling plate 32.
  • FIG. 5 schematically illustrates a region division manner of a dielectric coupling plate that can be applied to an inductively coupled plasma device according to an embodiment of the present invention.
  • the dielectric coupling plate 30 includes a plurality of regions arranged in a 4 x 4 matrix.
  • the present invention is not limited thereto, and the dielectric coupling plate 30 includes any plurality of regions arranged in a matrix.
  • An electric field adjusting structure 50 may be disposed in each of the regions for adjusting the electric field intensity entering the reaction chamber 01 through the respective regions.
  • FIGS. 6A and 6B schematically illustrate a region division manner of a dielectric coupling plate that can be applied to an inductively coupled plasma device according to an embodiment of the present invention.
  • the dielectric coupling plate 30 may include a first region 301 at the center, a second region 302 surrounding the first region 301, and a third region 303 located outside the second region 302.
  • the division manner shown in FIG. 6A allows the electric field adjusting structure 50 located in different regions to adjust the electric field of the corresponding region to different degrees.
  • the third region 303 may be further divided into a first sub-region 3031 and a second sub-region 3032.
  • the shape of the dielectric coupling plate 30 is rectangular, and the peripheral contour of the second region 302 is rectangular.
  • the third area 303 includes four first sub-areas 3031 and four second sub-areas 3032.
  • Each of the first sub-regions 3031 is adjacent to one side of the second region 302, respectively, and the sides of the first sub-region 3031 adjacent to each other and the sides of the second region 302 are equal in length.
  • Each of the second sub-regions 3032 is located at a top corner portion of the dielectric coupling plate 30, respectively.
  • the adjustment can be made more precise.

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  • Physics & Mathematics (AREA)
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Abstract

一种电感耦合等离子体装置，包括反应室（01）、介电耦合板（30）以及设置在介电耦合板上方的线圈（20）。介电耦合板包括至少两层。介电耦合板包括多个区域，在每个区域中设置有电场调节结构（50），电场调节结构位于介电耦合板的至少两层之间。电场调节结构用于调节通过介电耦合板的每个区域进入反应室的电场强度。

Description

一种电感耦合等离子体装置 技术领域
本发明涉及显示技术领域，具体地，涉及一种电感耦合等离子体装置。
背景技术
电感耦合等离子体(Inductively Coupled Plasma，简称ICP)装置广泛用于等离子体刻蚀工艺。等离子体刻蚀的原理为：反应气体在电场的激发下被电离而产生等离子体，等离子体中包含电子、离子以及激发态的原子、分子和自由基等活性粒子，这些活性粒子可以与待刻蚀材料层发生反应，从而实现待刻蚀材料层的图案化。
在现有技术的电感耦合等离子体装置中，反应室中不均匀分布的电场会造成反应室中的等离子体也处于不均匀分布的状态，从而影响刻蚀的均匀性。
发明内容
本发明的至少一个目的在于提供一种能够提高刻蚀均匀性的电感耦合等离子体装置。
根据本发明的一个方面，提供一种电感耦合等离子体装置，包括：反应室、介电耦合板以及设置在所述介电耦合板上方的线圈。所述介电耦合板包括至少两层。所述介电耦合板包括多个区域，在每个区域中设置有电场调节结构，所述电场调节结构位于所述介电耦合板的至少两层之间。所述电场调节结构用于调节通过所述介电耦合板的每个区域进入所述反应室的电场强度。
根据本发明的实施例，所述电场调节结构的材料可以为吸波材料。在此情况下，所述吸波材料可以吸收所述线圈产生磁场能量的1％-30％。
根据本发明的实施例，所述吸波材料可以为金属，并且所述电场调节结构可以为网格结构。可替换地，所述吸波材料可以为碳纤维，并且所述电场调节结构可以为块状结构。
根据本发明的实施例，所述电场调节结构可以设置在所述介电耦合板的至少两层中的至少一层的表面。
根据本发明的实施例，所述介电耦合板的至少两层中的至少一层可以设置有凹槽，所述电场调节结构可以设置在所述凹槽内。
根据本发明的实施例，所述介电耦合板的多个区域可以呈矩阵排布。
根据本发明的实施例，所述介电耦合板的多个区域可以包括位于中心的第一区域、包围所述第一区域的第二区域以及位于所述第二区域外侧的第三区域。在此情况下，所述介电耦合板的形状可以为矩形，所述第二区域的外围轮廓为矩形，并且所述第三区域可以包括四个第一子区域和四个第二子区域。每个第一子区域可分别与所述第二区域的一条边相邻，彼此相邻的第一子区域的边和所述第二区域的边的长度相等。每个第二子区域可分别位于所述介电耦合板的顶角部。
根据本发明的电感耦合等离子体装置，通过将介电耦合板划分为多个区域并在每个区域中设置电场调节结构，可以对从介电耦合板的每个区域进入到反应室的电场强度进行独立调节，提高了穿过介电耦合板进入到反应室的电场强度的均匀性，从而提高了反应室中等离子体的均匀性，进而提高了刻蚀的均匀性。此外，将电场调节结构设置在介电耦合板的两个层之间，可以避免影响反应室中等离子体的形成，还可以避免与线圈产生极差，导致异常放电。
附图说明
为了更清楚地说明本发明各实施例或现有技术中的技术方案，下面将对示出了本发明的实施例或现有技术的附图进行描述。应当认识到，下面描述的附图仅仅示出了本发明的一些示例性实施例，而不是对于本发明范围的限定。在附图中，
图1示意地示出了现有技术中的电感耦合等离子体装置；
图2为根据本发明实施例的电感耦合等离子体装置的结构示意图；
图3为根据本发明另一实施例的电感耦合等离子体装置的结构示意图；
图4为根据本发明另一实施例的电感耦合等离子体装置的结构示意图；
图5示意地示出了可以应用于根据本发明实施例的电感耦合等离子体装置的介电耦合板的区域划分方式；
图6A和图6B示意地示出了可以应用于根据本发明实施例的电感耦合等离子体装置的介电耦合板的区域划分方式；并且
图7示意地示出了可以应用于根据本发明实施例的电感耦合等离子体装置的网格状电场调节结构。
具体实施方式
下面将结合附图，对本发明的示例性实施例进行清楚、完整的描述，然而，所描述的实施例仅仅是示例性而非限制性的。
图1示出了现有技术中的电感耦合等离子体装置。
如图1所示，电感耦合等离子体装置可以包括反应室01和介电耦合板30。介电耦合板30密封了反应室01。介电耦合板30上设置有进气口(图1中未示出)，用于向反应室01注入反应气体。介电耦合板30上方设有线圈20，其外接至射频电源10。射频电源10用于向线圈20内施加射频电流，以使线圈20产生变化的磁场。该变化的磁场可感应出电场，从而使注入反应室01内部的反应气体电离而产生等离子体。
然而，由于反应室01中的电场分布不均匀，使得反应室01中等离子体也处于不均匀分布的状态，从而影响刻蚀的均匀性。对于高世代面板产线而言，刻蚀的均匀性尤为重要。
图2为根据本发明实施例的电感耦合等离子体装置的结构示意图。
如图2所示，根据本发明实施例的电感耦合等离子体装置可以包括反应室01、介电耦合板30以及设置在介电耦合板30上方的线圈20。介电耦合板30包括至少两层31和32。介电耦合板30包括多个区域，在每个区域中设置有电场调节结构50。电场调节结构50位于介电耦合板30的至少两层31和32之间。电场调节结构50用于调节通过介电耦合板30的每个区域进入反应室01的电场强度。
此外，介电耦合板30还可以包括至少一个进气口(图2中未示出)，用于向反应室01注入反应气体。线圈20连接至使线圈20产生感应电场的射频电源10。反应室01底部可设置有基台80，用于固定待刻蚀基板60的静电卡盘70设置在基台80上。基台80可设置有小孔(图2中未示出)，并且从外部通过小孔注入氦气，以冷却静电卡盘70并且使静电卡盘70吸附到基台80上，起到固定静电卡盘70的作用。
需要说明的是，本发明构思对介电耦合板30与反应室01的连接 方式不进行限定，只要能够实现对反应室01进行密封即可。此外，本发明构思对设置在介电耦合板30上方线圈20的个数和形状不进行限定，线圈20的数量可以是一个，也可以是多个。线圈20的可以是包含若干匝多边形的形状，也可以是包含若干匝同心圆的形状，只要能产生感应电场即可。本发明构思对介电耦合板30的层数不进行限定。虽然图2示出了电耦合板30包括两层31和32(即，第一层介电耦合板31和第二层介电耦合板32)，但介电耦合板30的层数可以多于两层。
电场调节结构50可以设置在介电耦合板30的至少两层31和32中的至少一层的表面。例如，电场调节结构50可以设置在第一层介电耦合板31面对第二层介电耦合板32的表面。可替换或附加地，电场调节结构50可以设置在第二层介电耦合板32面对第一层介电耦合板31的表面。当需要更换电场调节结构50时，可以揭开第一层介电耦合板31对电场调节结构50进行更换。
根据本发明的实施例，电场调节结构50的材料为吸波材料。为了在提高刻蚀均匀性的同时，不影响刻蚀的速率，用于形成电场调节结构50的吸波材料可以仅吸收线圈20产生磁场能量的1％-30％。
根据本发明的实施例，吸波材料为金属，并且电场调节结构50为网格结构，如图7所示。例如，用于形成电场调节结构50的吸波材料可以为铝(Al)、铜(Cu)等。可以根据不同的吸波材料设置金属网格结构的网格密度，从而控制电场调节结构50对电场的调节能力。
可替换地，吸波材料可以为碳纤维，并且电场调节结构50为块状结构。可以对碳纤维进行金属掺杂，以提高吸波材料的电场调节能力，掺杂的金属可以为Al、Cu等。块状的电场调节结构50相对于网格状的电场调节结构50制造工艺简单，可节省制造成本。
根据本发明的实施例，将介电耦合板30划分为多个区域，并且在每个区域中设置对于电场独立地进行调节的电场调节结构50，以使通过每个区域进入反应室01的电场强度均匀。可根据需要对设置在不同区域中的电场调节结构50的调节能力独立地进行控制。
在处理待刻蚀基板60时，反应气体通过介电耦合板30的进气口注入到反应室01中。射频发生器10产生的射频功率传送至线圈20。当线圈20产生的电磁场能量经过介电耦合板30的每个区域时，分别 位于每个区域的电场调节结构50对通过该区域的电磁场能量进行不同程度的调节，即，对电磁场能量产生的感应电场进行调节，使得各个区域的感应电场强度均匀，从而对位于静电卡盘70上的待刻蚀基板60均匀地进行刻蚀。
通过将介电耦合板30划分为多个区域并在每个区域中设置电场调节结构50，可以对从介电耦合板30的每个区域进入到反应室01的电场强度进行独立调节，提高了穿过介电耦合板30进入到反应室01的电场强度的均匀性，从而提高了反应室01中等离子体的均匀性，进而使得对待刻蚀基板60的刻蚀的均匀性提高。此外，将电场调节结构50设置在第一层介电耦合板31和第二层介电耦合板32之间，可以避免影响反应室01中等离子体的形成，还可以避免与线圈20产生极差，导致异常放电。
图3为根据本发明另一实施例的电感耦合等离子体装置的结构示意图。下面，针对与前述参照图2描述的实施例的差别进行详细描述，而省略了相同部分的描述。
如图3所示，根据本发明实施例的电感耦合等离子体装置可以包括腔体，并且介电耦合板30可以设置在腔体内部。在介电耦合板30下方的腔体形成反应室01，介电耦合板30密封反应室01。介电耦合板30上可以设置进气口(图3中未示出)，线圈20设置在介电耦合板30上方并且连接至设置在上部腔室02中的射频电源10。此外，腔体的外壳接地，使电感耦合等离子体装置处于零电位。介电耦合板30可以包括第一层介电耦合板31和第二层介电耦合板32。
图4为根据本发明另一实施例的电感耦合等离子体装置的结构示意图。下面，针对与前述参照图2和图3描述的实施例的差别进行详细描述，而省略了相同部分的描述。
根据本发明的实施例，可在第二层介电耦合板32面对第一层介电耦合板31的表面设置凹槽，并且电场调节结构50可设置在每个凹槽中。可替换或附加地，可在第一层介电耦合板31面对第二层介电耦合板32的表面设置凹槽。
图5示意地示出了可以应用于根据本发明实施例的电感耦合等离子体装置的介电耦合板的区域划分方式。
如图5所示，介电耦合板30包括按照4×4矩阵排布的多个区域， 但是本发明不限于此，介电耦合板30包括呈矩阵排布的任意多个区域。电场调节结构50可以设置在每个区域中，用于调节通过各个区域进入反应室01的电场强度。
图6A和图6B示意地示出了可以应用于根据本发明实施例的电感耦合等离子体装置的介电耦合板的区域划分方式。
如图6A所示，介电耦合板30可包括位于中心的第一区域301，包围第一区域301的第二区域302以及位于第二区域302外侧的第三区域303。
由于线圈20在介电耦合板30从中心到边缘产生的电场强度不同，图6A所示的划分方式可以使位于不同区域的电场调节结构50对相应区域的电场进行不同程度的调节。
如图6B所示，可以将第三区域303进一步划分为第一子区域3031和第二子区域3032。如图所示，介电耦合板30的形状为矩形，并且第二区域302的外围轮廓为矩形。第三区域303包括四个第一子区域3031和四个第二子区域3032。每个第一子区域3031分别与第二区域302的一条边相邻，并且彼此相邻的第一子区域3031的边和第二区域302的边的长度相等。每个第二子区域3032分别位于介电耦合板30的顶角部。
通过对第三区域303进一步进行具体划分，可以使得调节更精确。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (10)

  1. 一种电感耦合等离子体装置，包括：反应室、介电耦合板以及设置在所述介电耦合板上方的线圈，其中，
    所述介电耦合板包括至少两层，
    所述介电耦合板包括多个区域，在每个区域中设置有电场调节结构，所述电场调节结构位于所述介电耦合板的至少两层之间，并且
    所述电场调节结构用于调节通过所述介电耦合板的每个区域进入所述反应室的电场强度。
  2. 根据权利要求1所述的电感耦合等离子体装置，其中，所述电场调节结构的材料为吸波材料。
  3. 根据权利要求2所述的电感耦合等离子体装置，其中，所述吸波材料吸收所述线圈产生磁场能量的1％-30％。
  4. 根据权利要求2所述的电感耦合等离子体装置，其中，所述吸波材料为金属，并且所述电场调节结构为网格结构。
  5. 根据权利要求2所述的电感耦合等离子体装置，其中，所述吸波材料为碳纤维，并且所述电场调节结构为块状结构。
  6. 根据权利要求1所述的电感耦合等离子体装置，其中，所述电场调节结构设置在所述介电耦合板的至少两层中的至少一层的表面。
  7. 根据权利要求1所述的电感耦合等离子体装置，其中，所述介电耦合板的至少两层中的至少一层设置有凹槽，所述电场调节结构设置在所述凹槽内。
  8. 根据权利要求1所述的电感耦合等离子体装置，其中，所述介电耦合板的多个区域呈矩阵排布。
  9. 根据权利要求1所述的电感耦合等离子体装置，其中，所述介电耦合板的多个区域包括位于中心的第一区域、包围所述第一区域的第二区域以及位于所述第二区域外侧的第三区域。
  10. 根据权利要求9所述的电感耦合等离子体装置，其中，
    所述介电耦合板的形状为矩形，
    所述第二区域的外围轮廓为矩形，并且
    所述第三区域包括四个第一子区域和四个第二子区域，
    其中，每个第一子区域分别与所述第二区域的一条边相邻，彼此 相邻的第一子区域的边和所述第二区域的边的长度相等，并且
    其中，每个第二子区域分别位于所述介电耦合板的顶角部。
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