WO2017185849A1 - 发光元件及其制备方法 - Google Patents

发光元件及其制备方法 Download PDF

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Publication number
WO2017185849A1
WO2017185849A1 PCT/CN2017/073058 CN2017073058W WO2017185849A1 WO 2017185849 A1 WO2017185849 A1 WO 2017185849A1 CN 2017073058 W CN2017073058 W CN 2017073058W WO 2017185849 A1 WO2017185849 A1 WO 2017185849A1
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Prior art keywords
light
emitting
transport layer
pattern
cathode electrode
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PCT/CN2017/073058
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English (en)
French (fr)
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张博
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京东方科技集团股份有限公司
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Priority to US15/545,176 priority Critical patent/US10396245B2/en
Priority to EP17737458.4A priority patent/EP3451393B1/en
Publication of WO2017185849A1 publication Critical patent/WO2017185849A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a light emitting device and a method of fabricating the same.
  • the light-emitting element includes: a substrate 1 and a substrate. a plurality of light-emitting units 2 on each of the light-emitting units 2 each comprising a separate LED chip, wherein the LED chip comprises: an anode electrode 4, a hole transport layer 7, a light-emitting layer 6, an electron transport layer 3 and a cathode electrode 5
  • the cathode electrode 5 and the light-emitting layer 6 are both located above the electron transport layer 3 and separated from each other.
  • the hole transport layer 7 is located above the light-emitting layer 6, and the anode electrode 4 is located above the hole transport layer.
  • the minimum size of each of the light-emitting elements is approximately equal to the sum of the anode electrode size and the cathode electrode size, so that the size of the light-emitting unit cannot be further reduced.
  • the resolution of the component is limited.
  • the present invention provides a light-emitting element and a method of fabricating the same, which aim to at least solve one of the technical problems existing in the prior art.
  • the present invention further provides a light emitting device comprising: a substrate substrate and a plurality of light emitting units disposed on the base substrate, each of the light emitting units comprising: an anode electrode, a hole transport layer, a light emitting layer, The electron transport layer and the cathode electrode are all divided into a plurality of light-emitting units, and the light-emitting units located in the same light-emitting group share the same electron transport layer and the cathode electrode.
  • a periphery of each of the light emitting units is correspondingly provided with a conductive pattern, and a resistance of the conductive pattern is smaller than a resistance between a cathode electrode and an anode electrode of the corresponding light emitting unit.
  • the conductive pattern is located above the electron transport layer and is not covered by the light emitting layer.
  • a periphery of each of the light emitting units is correspondingly provided with a light shield surrounding the light emitting unit.
  • the conductive pattern has a ring shape, and the hood is located on the conductive pattern.
  • the conductive pattern material is at least one of gold, platinum, and graphene.
  • the light emitting units located in the same light emitting group are arranged in a first direction, and the electron transporting layer has a shape of a plate and extends in the first direction.
  • the cathode electrode includes: a first sub-cathode electrode pattern and a second sub-cathode electrode pattern, wherein the first sub-cathode electrode pattern and the second sub-cathode electrode pattern are respectively located at two of the electron transport layers end.
  • a current spreading layer is disposed between the anode electrode and the hole transport layer.
  • the material of the hole transport layer is P-type gallium nitride
  • the material of the light emitting layer is gallium nitride
  • the material of the electron transport layer is N-type gallium nitride.
  • the base substrate is a sapphire substrate or a glass substrate.
  • the present invention also provides a method for preparing a light-emitting element, comprising:
  • each of the light emitting units including: an anode electrode, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode electrode, wherein all the light emitting units are divided into a plurality of light emitting groups, and are located in the same light All of the light-emitting units in the group share the same electron transport layer and cathode electrode.
  • the step of forming a plurality of light emitting units includes:
  • the electron transport layer is in one-to-one correspondence with the light-emitting groups, and all of the light-emitting units located in the same light-emitting group share the same electron transport layer;
  • a second conductive film is formed over the hole transport layer, and the second conductive film is subjected to a patterning process to form a pattern of the anode electrode over the hole transport layer.
  • the method further includes: forming a third conductive film over the electron transport layer, and performing a patterning process on the third conductive film to be over the electron transport layer and not covered by the light emitting layer
  • the region forms a conductive pattern, and the conductive pattern is in one-to-one correspondence with the light-emitting unit and is located at a periphery of the corresponding light-emitting unit, and the resistance of the conductive pattern is smaller than a correspondence between the cathode electrode and the anode electrode of the corresponding light-emitting unit. resistance.
  • the method further includes: forming a hood surrounding the light emitting unit at a periphery of the light emitting unit.
  • the conductive pattern has a ring shape, and the conductive pattern and the hood are prepared by using the same mask, and the hood is located on the conductive pattern.
  • the step of forming a pattern of the anode electrode above the hole transport layer further includes:
  • a current spreading layer film is formed over the hole transport layer, and the current spreading layer film is subjected to a patterning process to form a pattern of the current spreading layer.
  • all the light emitting units located in the same light emitting group are arranged in a first direction
  • the electron transporting layer is in the shape of a plate and extends in the first direction
  • the cathode electrode comprises: a first sub cathode The electrode pattern and the second sub-cathode electrode pattern, the first sub-cathode electrode pattern and the second sub-cathode electrode pattern are respectively located at opposite ends of the corresponding electron transport layer.
  • the step of forming a plurality of light emitting units may include sequentially forming an electron transport layer film, a light emitting layer film, a hole transport layer film, and a current spreading layer film on the base substrate; a transport layer film and a current spreading layer film are performed a patterning process to form a pattern of a hole transporting layer, a light emitting layer and a current spreading layer of each of the light emitting units; performing a patterning process on the electron transporting layer film to form a pattern of the electron transporting layer; and a current spreading layer and an electron transporting layer A conductive film is formed thereon, and an anode electrode, a conductive layer surrounding the light emitting unit, a first sub-cathode electrode pattern, and a second sub-cathode electrode pattern are simultaneously formed by one patterning process.
  • the invention provides a light-emitting element and a preparation method thereof, wherein the light-emitting element comprises: an anode electrode, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode electrode, and all the light-emitting units are divided into a plurality of light-emitting groups, each The illuminating group includes at least two illuminating units, and all of the illuminating units in the same illuminating group share the same electron transporting layer and the cathode electrode.
  • the technical solution of the present invention effectively reduces the number of cathode electrodes by making all the light-emitting units in the same light-emitting group share the same electron-transport layer and the cathode electrode, and at this time, some of the light-emitting units do not need to be provided with cathode electrodes in their respective corresponding regions.
  • the minimum size of these illumination units can be approximately equal to the size of the anode electrode. Therefore, compared with the prior art, the technical solution of the present invention can effectively reduce the size of a part of the light emitting unit in the light emitting element, thereby increasing the number of light emitting units that can be disposed in the light emitting element, thereby further improving the resolution of the light emitting element. .
  • FIG. 1 is a plan view of a light-emitting element in the prior art
  • Figure 2 is a schematic cross-sectional view of the light-emitting element of Figure 1 in the A-A direction;
  • FIG. 3 is a top plan view of a light emitting device according to Embodiment 1 of the present invention.
  • Figure 4 is a schematic cross-sectional view of one of the light-emitting groups of Figure 3 in the B-B direction;
  • FIG. 5 is a top plan view of a light emitting device according to Embodiment 2 of the present invention.
  • Figure 6 is a schematic cross-sectional view of one of the light-emitting groups of Figure 5 in the C-C direction;
  • FIG. 7 is a flowchart of a method for fabricating a light-emitting element according to Embodiment 4 of the present invention.
  • 8a is a schematic structural view showing the formation of an electron transport layer film, a light emitting layer film, and a hole transport layer film in the present invention
  • FIG. 8b is a schematic structural view showing a hole transport layer and a light-emitting layer formed in the present invention.
  • Figure 8c is a schematic view showing the structure of the electron transport layer formed in the present invention.
  • FIG. 9 is a flowchart of a method for fabricating a light-emitting element according to Embodiment 5 of the present invention.
  • 10a is a schematic structural view of a current spreading layer formed in the present invention.
  • Fig. 10b is a schematic view showing the structure of the anode electrode, the cathode electrode and the conductive pattern in the present invention.
  • FIG. 3 is a plan view of a light-emitting element according to Embodiment 1 of the present invention
  • FIG. 4 is a schematic cross-sectional view of a light-emitting group of FIG. 3 in a B-B direction.
  • the light-emitting element includes a base substrate 1 and a plurality of light-emitting units 2 disposed on the base substrate 1.
  • the light-emitting unit 2 includes an anode electrode 4, a hole transport layer 7, and a light-emitting layer. 6.
  • the electron transport layer 3 and the cathode electrode 5, all of the light-emitting units 2 are divided into a plurality of light-emitting groups, each of which includes at least two light-emitting units 2, and all of the light-emitting units 2 in the same light-emitting group share the same electronic transmission.
  • the base substrate 1 is a sapphire substrate or a glass substrate
  • the light emitting unit 2 is a gallium nitride light emitting diode.
  • the material of the hole transport layer 7 is P-type gallium nitride
  • the material of the light-emitting layer 6 is gallium nitride
  • the material of the electron transport layer 3 is N-type gallium nitride.
  • each of the light-emitting units since each of the light-emitting units includes a single cathode electrode, the minimum size of each of the light-emitting units is approximately equal to the sum of the anode electrode size and the cathode electrode size.
  • all of the light-emitting units 2 in the same light-emitting group share the same electron transport layer 3 and the cathode electrode 5, that is, the plurality of light-emitting units 2 correspond to one cathode electrode 5, thereby effectively reducing the number of cathode electrodes 5, and at this time, partially emitting light.
  • Unit 2 is in its own corresponding area It is not necessary to provide the cathode electrode 5 in the domain, and accordingly the minimum size of these light-emitting units 2 can be approximately equal to the size of the anode electrode 4. Therefore, compared with the prior art, the technical solution of the present invention can effectively reduce the size of a part of the light emitting unit 2 in the light emitting element, thereby increasing the number of the light emitting units 2 that can be disposed in the light emitting element, thereby facilitating the improvement of the light emitting element. Resolution.
  • Embodiment 2 of the present invention provides a light-emitting element.
  • 5 is a top view of a light-emitting element according to a second embodiment of the present invention
  • FIG. 6 is a cross-sectional view of a light-emitting group of FIG. 5 in a CC direction.
  • the light-emitting element provided in this embodiment is Based on the improvement of the light-emitting element in the first embodiment, in addition to the structures including the light-emitting elements in the first embodiment, the conductive pattern 9 corresponding to the periphery of each of the light-emitting units 2 is included, and the conductive pattern 9 is provided.
  • the resistance is smaller than the resistance between the cathode electrode 5 and the anode electrode 4 of the corresponding light-emitting unit 2.
  • the conductive pattern 9 is located above the electron transport layer 3 and is not covered by the light-emitting layer 6.
  • a conductive pattern 9 having a small resistance value is disposed on the periphery of each of the light-emitting units 2, and the resistance between the conductive pattern 9 and the cathode electrode 5 to the anode electrode 4 of each of the light-emitting units 2 is paralleled.
  • the equivalent resistance between the cathode electrode 5 to the anode electrode 4 of each of the light-emitting units 2 is smaller than the resistance of the conductive pattern 9.
  • the equivalent resistance between the cathode electrode 5 and the anode electrode 4 of each of the light-emitting elements 2 in the light-emitting element is limited to a small range, and at this time, each of the light-emitting units
  • the equivalent resistance between the cathode electrode 5 and the anode electrode 4 of 2 is approximately equal. Accordingly, the magnitudes of the currents flowing through the respective light-emitting units 2 are also equal, and the light-emitting characteristics of the respective light-emitting units 2 tend to be uniform.
  • the material of the conductive pattern 9 may be selected from a low resistivity material. Specifically, the material of the conductive pattern 9 is selected from at least one of gold, platinum, and graphene.
  • the equivalent resistance drop between the cathode electrode 5 and the anode electrode 4 of the light emitting unit 2 can be made. Low, accordingly, the driving current required for each of the light-emitting units 2 is also lowered, so that the overall power consumption of the light-emitting elements is lowered.
  • the periphery of each of the light-emitting units 2 is correspondingly provided with a hood 10 surrounding the light-emitting unit 2, and the hood 10 will be correspondingly The light-emitting unit 2 is surrounded, so that the light generated by the corresponding light-emitting unit 2 can be prevented from being directed to the other light-emitting units 2, and the light generated by the other light-emitting units 2 can be prevented from being directed to the corresponding light-emitting unit 2, thereby effectively avoiding optical crosstalk.
  • the shape of the conductive pattern 9 is annular, and the hood 10 is located on the conductive pattern 9. At this time, the orthographic projections of the hood 10 and the conductive pattern 9 on the substrate 1 are completely coincident, and therefore, the hood 10 is The patterning process and the patterning process of the conductive pattern 9 can use the same mask.
  • the shape of the hood 10 in this embodiment may be any annular shape such as an annular shape or a rectangular ring shape.
  • FIG. 5 only the hood 10 is exemplarily shown as a rectangular ring shape. In the case, it does not impose a limitation on the technical solution of the present invention.
  • all of the light-emitting units 2 located in the same light-emitting group are arranged in the first direction (corresponding to the row direction in the drawing), and the electrons
  • the shape of the transport layer 3 is plate-shaped and extends in the first direction.
  • the cathode electrode 5 includes a first sub-cathode electrode pattern 51 and a second sub-cathode electrode pattern 52, and the first sub-cathode electrode pattern 51 and the second sub-cathode electrode pattern 52 are respectively located at opposite ends of the corresponding electron transport layer 3.
  • the sum of the distances between the respective light-emitting units 2 and the two sub-cathode electrode patterns in the same light-emitting group is equal, and correspondingly, between the anode electrode 4 and the cathode electrode 5 of each of the light-emitting units 2 in the same light-emitting group.
  • the resistance (equal to the sum of the resistances of the anode electrode 4 to the first sub-cathode electrode pattern 51 and the second sub-cathode electrode pattern 52, respectively) is equal, thus the first sub-cathode electrode pattern 51 and the second sub-cathode electrode pattern 52.
  • the current flowing through each of the light-emitting units 2 in the same light-emitting group can be effectively improved. Uniformity.
  • a current spreading layer 8 is disposed between the anode electrode 4 and the hole transport layer 7, and the current spreading layer 8 can expand the current to an area not covered by the anode electrode 4.
  • the material of the current spreading layer 8 is selected from at least one of nickel or gold.
  • the third embodiment of the present invention provides a method for preparing a light-emitting element, which is used for preparing the light-emitting element of the first embodiment or the second embodiment.
  • the method for preparing the light-emitting element includes:
  • Step A forming a plurality of light emitting units above the base substrate, each of the light emitting units including: an anode electrode, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode electrode, wherein all the light emitting units are divided into a plurality of light emitting groups. All of the light-emitting units located in the same light-emitting group share the same electron-transport layer and cathode electrode.
  • the number of cathode electrodes can be effectively reduced.
  • some of the light-emitting units do not need to be provided with cathode electrodes in their respective corresponding regions.
  • the minimum size of these light-emitting units can be approximately equal to the size of the anode electrode. Therefore, compared with the prior art, the technical solution of the present invention can effectively reduce the size of a part of the light emitting unit in the light emitting element, thereby increasing the number of light emitting units that can be disposed in the light emitting element, thereby further improving the resolution of the light emitting element.
  • FIG. 7 is a flowchart of a method for fabricating a light-emitting element according to Embodiment 4 of the present invention. As shown in FIG. 7 , the preparation method is used to prepare the light-emitting element in the first embodiment, and the preparation method includes:
  • Step 101 sequentially forming an electron transport layer film, a light emitting layer film, and a hole transport layer film on the base substrate.
  • FIG. 8a is a schematic view showing the structure of an electron transport layer film, a light-emitting layer film, and a hole transport layer film in the present invention, as shown in FIG. 8a, by metal-organic chemical vapor deposition (MOCVD). a process, a plasma enhanced chemical vapor deposition process (PECVD) or a sputtering process, sequentially forming an electron transport layer film 11, a light emitting layer film 12, and a hole transport layer on the base substrate 1. Film 13.
  • MOCVD metal-organic chemical vapor deposition
  • the base substrate 1 is a sapphire substrate or a glass substrate
  • the material of the hole transport layer film 13 is P-type gallium nitride
  • the material of the light-emitting layer film 12 is gallium nitride
  • the material of the electron transport layer film 11 It is an N-type gallium nitride.
  • Step 102 Perform a patterning process on the light-emitting layer film and the hole transport layer film to form a pattern of the hole transport layer and the light-emitting layer of each light-emitting unit.
  • FIG. 8b is a schematic view showing the structure of the hole transport layer and the light-emitting layer in the present invention.
  • the light-emitting layer film 12 and the hole transport layer film 13 are patterned once to form a hole transport at the same time.
  • inductively coupled plasma (ICP) etching may be employed. The process is etched.
  • the patterning process in the present invention refers to a process step including photoresist coating, exposure, development, etching, photoresist stripping, and the like.
  • Step 103 Perform a patterning process on the electron transport layer film to form a pattern of the plurality of electron transport layers.
  • the electron transport layer corresponds to the light-emitting group one by one, and all the light-emitting units located in the same light-emitting group share the same electron transport layer.
  • FIG. 8c is a schematic structural view of a pattern for forming an electron transport layer in the present invention.
  • a patterning process is performed on the electron transport layer film according to a preset illumination group division plan to form an amount equal to the number of the light-emitting groups.
  • etching may be performed by an ICP etching process.
  • Step 104 forming a first conductive film over the electron transport layer, and performing a patterning process on the first conductive film to form a cathode electrode on the electron transport layer.
  • the light-emitting units located in the same light-emitting group share the same cathode electrode.
  • step 104 the cathode electrode 5 is formed over the electron transport layer 3 by one patterning process, and only one pattern of the cathode electrode 5 is formed above the pattern of each electron transport layer 3, at this time the same All of the light-emitting units 2 in the light-emitting group share the same cathode electrode 5.
  • the material of the cathode electrode 5 may be at least one selected from the group consisting of titanium and gold.
  • Step 105 forming a second conductive film over the hole transport layer, and performing a patterning process on the second conductive film to form a pattern of the anode electrode over the hole transport layer.
  • the anode electrode 4 is formed over the hole transport layer 7 by one patterning process.
  • the materials of the anode electrode 4 and the cathode electrode 5 may be respectively selected from at least one of titanium and gold.
  • step 105 in this embodiment may also be performed before step 104.
  • a conductive thin film layer may be simultaneously formed over the electron transport layer 3 and the hole transport layer 7, and a pattern is formed by one time. The process simultaneously forms a pattern including the anode electrode 4 and the cathode electrode 5.
  • FIG. 9 is a flow chart of a method for fabricating a light-emitting element according to a fifth embodiment of the present invention. As shown in FIG. 9, the preparation method is used to prepare the light-emitting element of the second embodiment.
  • the preparation method includes:
  • Step 201 sequentially forming an electron transport layer film, a light emitting layer film, and a hole transport layer film on the base substrate.
  • Step 202 Perform a patterning process on the light-emitting layer film and the hole transport layer film to form a pattern of a hole transport layer and a light-emitting layer of each light-emitting unit.
  • Step 203 Perform a patterning process on the electron transport layer film to form a plurality of patterns of the electron transport layer, the electron transport layer and the light-emitting layer are in one-to-one correspondence, and all the light-emitting units in the same light-emitting group share the same electron transport layer, and the electron transport
  • the shape of the layer is plate-shaped and extends in the first direction, and all of the light-emitting units located in the same light-emitting group are arranged in the first direction.
  • step 201 to step 203 in this embodiment are the same as the above.
  • the process of the step 101 to the step 103 in the fourth embodiment is the same.
  • Step 204 forming a current spreading layer film on the hole transport layer, and performing a patterning process on the current spreading layer film to form a pattern of the current spreading layer.
  • FIG. 10a is a schematic structural view of a current spreading layer formed in the present invention. As shown in FIG. 10a, a patterning process is performed on a current spreading layer film which is a conductive film to form a pattern of the current spreading layer 8, wherein the current spreading layer 8 is located in an empty space. Above the hole transport layer 7. Optionally, the material of the current spreading layer 8 is selected from at least one of nickel or gold.
  • Step 205 forming a first conductive film over the electron transport layer, and performing a patterning process on the first conductive film to form a first sub-cathode electrode pattern and a second sub-cathode electrode pattern over the electron transport layer.
  • the light-emitting units in the light-emitting group share the same first sub-cathode electrode pattern and the second sub-cathode electrode pattern, and the first sub-cathode electrode pattern and the second sub-cathode electrode pattern are respectively located at both ends of the electron transport layer.
  • Step 206 Form a second conductive film over the current spreading layer, and perform a patterning process on the second conductive film to form a pattern of the anode electrode above the current spreading layer.
  • Step 207 forming a third conductive film over the electron transport layer, and performing a patterning process on the third conductive film to form a conductive pattern, a conductive pattern and a light emitting unit in a region above the electron transport layer and not covered by the light emitting layer
  • the resistance of the conductive pattern is smaller than the resistance between the cathode electrode and the anode electrode of the corresponding light-emitting unit.
  • FIG. 10b is a schematic view showing the structure of the anode electrode, the cathode electrode and the conductive pattern in the present invention.
  • the first sub-cathode electrode pattern 51 is formed on both ends of the electron transport layer 3 by the step 205.
  • the second sub-cathode electrode pattern 52 can effectively improve the uniformity of the current flowing through the respective light-emitting units 2 in the same light-emitting group.
  • the uniformity of the current flowing through the respective light-emitting units 2 in the light-emitting element can be improved, and the drive current can be effectively reduced.
  • the conductive pattern 9 has a ring shape to surround the corresponding light emitting unit 2.
  • step 205, step 206, and step 207 is not limited, that is, step 206 may be performed before step 205, and step 207 may be performed before step 205 and step 206.
  • a conductive thin film layer is formed over the electron transport layer 3 and the current spreading layer 8, and is simultaneously formed by a patterning process including: an anode electrode 4, a first sub-cathode electrode pattern 51, a second sub-cathode electrode pattern 52, and a conductive Graphic 9 graphic.
  • Step 208 forming a hood surrounding the light emitting unit at a periphery of the light emitting unit, the hood being located above the conductive pattern.
  • the cross-sectional shape of the hood 10 is preferably the same as the cross-sectional shape of the conductive pattern 9, and the mask used in the above step 207 can be used for preparation.
  • the hood 10 can effectively reduce the number of reticle used in the production process, thereby saving production costs.
  • steps 201 to 204 may also be replaced by the following steps:
  • an electron transport layer film, a light emitting layer film, a hole transport layer film, and a current spreading layer film are sequentially formed on the base substrate;

Abstract

一种发光元件及其制备方法，发光元件包括：阳极电极（4）、空穴传输层（7）、发光层（6）、电子传输层（3）和阴极电极（5），全部发光单元（2）被划分为多个发光组，每一发光组中至少包括两个发光单元，位于同一发光组中的全部发光单元共用同一电子传输层和阴极电极。通过将同一发光组中的全部发光单元共用同一电子传输层和阴极电极，从而有效减少阴极电极的数量，此时部分发光单元在其自身所对应区域内无需设置阴极电极，而这些发光单元的最小尺寸可近似等于阳极电极的尺寸。可有效减小发光元件中部分发光单元的尺寸，从而使得发光元件中可设置的发光单元的数量增加，进而有利于提高发光元件的分辨率。

Description

发光元件及其制备方法 技术领域
本发明涉及显示技术领域，特别涉及一种发光元件及其制备方法。
背景技术
图1为现有技术中一种发光元件的俯视图，图2为图1中A-A向的截面示意图，如图1和图2所示，该发光元件包括：衬底基板1和设置于衬底基板1上的多个发光单元2，每个发光单元2均包括一个独立的LED芯片，其中该LED芯片包括：阳极电极4、空穴传输层7、发光层6、电子传输层3和阴极电极5，其中，阴极电极5和发光层6均位于电子传输层3的上方且两者分离，空穴传输层7位于发光层6的上方，阳极电极4位于空穴传输层的上方。
在现有技术中，受到阳极电极图形和阴极电极图形的限制，发光元件中每个发光单元的最小尺寸近似等于阳极电极尺寸与阴极电极尺寸之和，从而使得发光单元的尺寸无法进一步缩小，发光元件的分辨率受到限制。
发明内容
本发明提供一种发光元件及其制备方法，旨在至少解决现有技术中存在的技术问题之一。
为实现上述目的，本发明还提供了一种发光元件，包括：衬底基板和设置于衬底基板上的多个发光单元，每个发光单元包括：阳极电极、空穴传输层、发光层、电子传输层和阴极电极，全部发光单元被划分为多个发光组，位于同一发光组中的所述发光单元共用同一电子传输层和阴极电极。
可选地，每个所述发光单元的周边对应设置有导电图形，所述导电图形的电阻小于对应的所述发光单元的阴极电极到阳极电极之间的电阻。
可选地，所述导电图形位于所述电子传输层的上方且未被所述发光层覆盖的区域。
可选地，每个所述发光单元的周边对应设置有环绕所述发光单元的遮光罩。
可选地，所述导电图形的形状为环状，所述遮光罩位于所述导电图形上。
可选地，所述导电图形的材料为金、铂、石墨烯中的至少一种。
可选地，位于同一所述发光组中的发光单元沿第一方向排列，所述电子传输层的形状为板状且沿所述第一方向延伸。
可选地，所述阴极电极包括：第一子阴极电极图形和第二子阴极电极图形，所述第一子阴极电极图形和所述第二子阴极电极图形分别位于所述电子传输层的两端。
可选地，所述阳极电极和所述空穴传输层之间设置有电流扩展层。
可选地，所述空穴传输层的材料为P型氮化镓；
所述发光层的材料为氮化镓；
所述电子传输层的材料为N型氮化镓。
可选地，所述衬底基板为蓝宝石基板或玻璃基板。
为实现上述目的，本发明还提供了一种发光元件的制备方法，包括：
在衬底基板的上方形成多个发光单元，每个发光单元包括：阳极电极、空穴传输层、发光层、电子传输层和阴极电极，全部发光单元被划分为多个发光组，位于同一发光组中的全部所述发光单元共用同一电子传输层和阴极电极。
可选地，所述形成多个发光单元的步骤包括：
在衬底基板上依次形成电子传输层薄膜、发光层薄膜和空穴传输层薄膜；
对所述发光层薄膜和空穴传输层薄膜进行一次构图工艺，以形成各发光单元的空穴传输层和发光层的图形；
对所述电子传输层薄膜进行一次构图工艺，以形成多个电子传 输层的图形，所述电子传输层与所述发光组一一对应，位于同一发光组中的全部所述发光单元共用同一电子传输层；
在电子传输层的上方形成第一导电薄膜，并对所述第一导电薄膜进行一次构图工艺，以在所述电子传输层的上方形成阴极电极的图形，位于同一发光组中的所述发光单元共用同一阴极电极。
在空穴传输层的上方形成第二导电薄膜，并对所述第二导电薄膜进行一次构图工艺，以在所述空穴传输层的上方形成阳极电极的图形。
可选地，还包括：在电子传输层的上方形成第三导电薄膜，并对所述第三导电薄膜进行一次构图工艺，以在所述电子传输层的上方且未被所述发光层覆盖的区域形成导电图形，所述导电图形与所述发光单元一一对应且位于对应的所述发光单元的周边，所述导电图形的电阻小于对应的所述发光单元的阴极电极到阳极电极之间的电阻。
可选地，还包括：在所述发光单元的周边形成环绕所述发光单元的遮光罩。
可选地，所述导电图形的形状为环状，所述导电图形和所述遮光罩采用同一掩膜版进行制备，所述遮光罩位于所述在所述导电图形上。
可选地，所述在所述空穴传输层的上方形成阳极电极的图形的步骤之前还包括：
在所述空穴传输层的上方形成电流扩展层薄膜，并对所述电流扩展层薄膜进行一次构图工艺以形成电流扩展层的图形。
可选地，位于同一所述发光组中的全部发光单元沿第一方向排列，所述电子传输层的形状为板状且沿所述第一方向延伸，所述阴极电极包括：第一子阴极电极图形和第二子阴极电极图形，所述第一子阴极电极图形和所述第二子阴极电极图形分别位于对应的所述电子传输层的两端。
可选地，所述形成多个发光单元的步骤可以包括：在衬底基板上依次形成电子传输层薄膜、发光层薄膜、空穴传输层薄膜和电流扩展层薄膜；对发光层薄膜、空穴传输层薄膜和电流扩展层薄膜进行一 次构图工艺，以形成各发光单元的空穴传输层、发光层和电流扩展层的图形；对电子传输层薄膜进行一次构图工艺，以形成电子传输层的图形；在电流扩展层和电子传输层上形成一层导电薄膜，通过一次构图工艺同时形成阳极电极、围绕发光单元的导电层、第一子阴极电极图形和第二子阴极电极图形。
本发明具有以下有益效果：
本发明提供了一种发光元件及其制备方法，其中该发光元件包括：阳极电极、空穴传输层、发光层、电子传输层和阴极电极，全部发光单元被划分为多个发光组，每一发光组中至少包括两个发光单元，位于同一发光组中的全部发光单元共用同一电子传输层和阴极电极。本发明的技术方案通过使同一发光组中的全部发光单元共用同一电子传输层和阴极电极，从而有效减少阴极电极的数量，此时部分发光单元在其自身所对应区域内无需设置阴极电极，而这些发光单元的最小尺寸可近似等于阳极电极的尺寸。因此，与现有技术相比，本发明的技术方案可有效减小发光元件中部分发光单元的尺寸，从而使得发光元件中可设置的发光单元的数量增加，进而有利于提高发光元件的分辨率。
附图说明
图1为现有技术中一种发光元件的俯视图；
图2为图1中发光元件在A-A向的截面示意图；
图3为本发明实施例一提供的一种发光元件的俯视图；
图4为图3中一个发光组在B-B向的截面示意图；
图5为本发明实施例二提供的一种发光元件的俯视图；
图6为图5中一个发光组在C-C向的截面示意图；
图7为本发明实施例四提供的一种发光元件的制备方法的流程图；
图8a为本发明中形成电子传输层薄膜、发光层薄膜和空穴传输层薄膜时的结构示意图；
图8b为本发明中形成空穴传输层和发光层时的结构示意图；
图8c为本发明中形成电子传输层时的结构示意图；
图9为本发明实施例五提供的一种发光元件的制备方法的流程图；
图10a为本发明中形成电流扩展层时的结构示意图；
图10b为本发明中形成阳极电极、阴极电极和导电图形时的结构示意图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图对本发明提供的发光元件及其制备方法进行详细描述。
实施例一
图3为本发明实施例一提供的一种发光元件的俯视图，图4为图3中一个发光组在B-B向的截面示意图。如图3和图4所示，该发光元件包括：衬底基板1和设置于衬底基板1上的多个发光单元2，发光单元2包括：阳极电极4、空穴传输层7、发光层6、电子传输层3和阴极电极5，全部发光单元2被划分为多个发光组，每一发光组中至少包括两个发光单元2，位于同一发光组中的全部发光单元2共用同一电子传输层3和阴极电极5。
在本实施例中，可选地，衬底基板1为蓝宝石基板或玻璃基板，发光单元2为氮化镓发光二极管。具体地，空穴传输层7的材料为P型氮化镓，发光层6的材料为氮化镓，电子传输层3的材料为N型氮化镓。
需要说明的是，上述各个结构的材料仅起到示例性作用，其不会对本发明的技术方案产生限制。
在现有技术中，由于每个发光单元均包括一个单独的阴极电极，因此各发光单元的最小尺寸近似等于阳极电极尺寸与阴极电极尺寸之和。在本发明中，同一发光组中的全部发光单元2共用同一电子传输层3和阴极电极5，即多个发光单元2对应一个阴极电极5，从而有效减少阴极电极5的数量，此时部分发光单元2在其自身所对应区 域内无需设置阴极电极5，相应地这些发光单元2的最小尺寸可近似等于阳极电极4的尺寸。因此，与现有技术相比，本发明的技术方案可有效减小发光元件中部分发光单元2的尺寸，从而使得发光元件中可设置的发光单元2的数量增加，进而有利于提高发光元件的分辨率。
实施例二
在实际应用中发现，随着发光单元2的阳极电极4与阴极电极5之间距离的增加，发光单元2的导电电阻逐渐增大，从而导致流过不同发光单元2的电流大小不同，最终造成各发光单元2的发光特性不一致。
为解决上述技术问题，本发明实施例二提供了一种发光元件。图5为本发明实施例二提供的一种发光元件的俯视图，图6为图5中一个发光组在C-C向的截面示意图，如图5和图6所示，本实施例提供的发光元件是基于上述实施例一中的发光元件的改进，其除了包括实施例一中的发光元件的各结构外，还包括：在每个发光单元2的周边对应设置的导电图形9，且该导电图形9的电阻小于对应的发光单元2的阴极电极5到阳极电极4之间的电阻。其中，可选地，导电图形9位于电子传输层3的上方且未被发光层6覆盖的区域。
在本实施例中，在各发光单元2的周边设置一个电阻值较小的导电图形9，该导电图形9与各发光单元2的阴极电极5到阳极电极4之间的电阻并联，则可使得各发光单元2的阴极电极5到阳极电极4之间的等效电阻小于导电图形9的电阻。在导电图形9的电阻值较小的情况下，发光元件中各发光单元2的阴极电极5到阳极电极4之间的等效电阻会被限制在一个较小的范围内，此时各发光单元2的阴极电极5到阳极电极4之间的等效电阻近似相等。相应地，流过各发光单元2的电流大小也相等，各发光单元2的发光特性趋于一致。
本实施例中，导电图形9的材料可选用低电阻率材料。具体地，导电图形9的材料选自金、铂、石墨烯中的至少一种。
此外，本实施例中通过在发光单元2的周边对应设置导电图形9，可使得发光单元2的阴极电极5到阳极电极4之间的等效电阻降 低，相应地，各发光单元2所需的驱动电流也降低，从而使得发光元件的整体功耗降低。
本实施例中，为防止相邻的发光单元2之间发生光串扰，可选地，每个发光单元2的周边对应设置有环绕该发光单元2的遮光罩10，该遮光罩10将相应的发光单元2环绕起来，从而可避免对应的发光单元2产生的光线射向其他发光单元2，以及避免其他发光单元2产生的光线射向其对应的发光单元2，进而有效避免的了光串扰。
进一步可选地，导电图形9的形状为环状，遮光罩10位于导电图形9上，此时遮光罩10和导电图形9在衬底基板1上的正投影完全重合，因此，遮光罩10的构图工艺和导电图形9的构图工艺可使用同一掩膜版。
本领域技术人员应该知晓的是，本实施例中遮光罩10的形状可以为圆环状、矩形环状等任意环状形状，图5中仅示例性的画出了遮光罩10为矩形环状的情况，其不会对本发明的技术方案产生限制。
作为本实施例中的又一种改进方案，继续参见图5和图6，可选地，位于同一发光组中的全部发光单元2沿第一方向(对应附图中的行方向)排列，电子传输层3的形状为板状且沿第一方向延伸。阴极电极5包括：第一子阴极电极图形51和第二子阴极电极图形52，第一子阴极电极图形51和第二子阴极电极图形52分别位于对应的电子传输层3的两端。此时，位于同一发光组中的各发光单元2到两个子阴极电极图形之间的距离之和相等，相应地，位于同一发光组中的各发光单元2的阳极电极4到阴极电极5之间的电阻(等于阳极电极4分别到第一子阴极电极图形51和第二子阴极电极图形52之间的电阻之和)相等，因此在第一子阴极电极图形51和第二子阴极电极图形52连通电源后，流过各发光单元2的电流大小也相等，各发光单元2的发光特性趋于一致。
本实施例中，通过在电子传输层3的两端分别设置第一子阴极电极图形51和第二子阴极电极图形52，可有效提升位于同一发光组中各发光单元2所流过的电流的均一性。
需要说明的是，在实际应用中，可根据发光元件的尺寸、具体 性能要求以及成本考量等因素，按实际需求来单独使用两个阴极电极图形设计，或单独使用导电图形9设计，或者同时使用两个阴极电极图形设计和导电图形9设计。
本实施例中，可选地，如图6所示，阳极电极4和空穴传输层7之间设置有电流扩展层8，电流扩展层8可使得电流扩展到未被阳极电极4覆盖的区域，以增加光逸出效率。可选地，电流扩展层8的材料选自镍或金中的至少一种。
实施例三
本发明实施例三提供了一种发光元件的制备方法，用于制备上述实施例一或实施例二中的发光元件，该发光元件的制备方法包括：
步骤A、在衬底基板的上方形成多个发光单元，每个发光单元包括：阳极电极、空穴传输层、发光层、电子传输层和阴极电极，全部发光单元被划分为多个发光组，位于同一发光组中的全部发光单元共用同一电子传输层和阴极电极。
在本实施例中，通过将同一发光组中的全部发光单元共用同一电子传输层和阴极电极，可以有效减少阴极电极的数量，此时部分发光单元在其自身所对应区域内无需设置阴极电极，而这些发光单元的最小尺寸可近似等于阳极电极的尺寸。因此，与现有技术相比，本发明的技术方案可有效减小发光元件中部分发光单元的尺寸，从而使得发光元件中可设置的发光单元的数量增加，进而有利于提高发光元件的分辨率。
实施例四
图7为本发明实施例四提供的一种发光元件的制备方法的流程图，如图7所示，该制备方法用于制备上述实施例一中的发光元件，该制备方法包括：
步骤101、在衬底基板上依次形成电子传输层薄膜、发光层薄膜和空穴传输层薄膜。
图8a为本发明中形成电子传输层薄膜、发光层薄膜和空穴传输层薄膜时的结构示意图，如图8a所示，通过金属有机化合物化学气相沉淀(Metal-organic Chemical Vapor Deposition,简称MOCVD) 工艺、等离子体增强化学气相沉积工艺(Plasma Enhanced Chemical Vapor Deposition，简称PECVD)或溅射(Sputter)工艺，在衬底基板1上依次形成电子传输层薄膜11、发光层薄膜12和空穴传输层薄膜13。
其中，可选地，衬底基板1为蓝宝石基板或玻璃基板，空穴传输层薄膜13的材料为P型氮化镓，发光层薄膜12的材料为氮化镓，电子传输层薄膜11的材料为N型氮化镓。
步骤102、对发光层薄膜和空穴传输层薄膜进行一次构图工艺，以形成各发光单元的空穴传输层和发光层的图形。
图8b为本发明中形成空穴传输层和发光层的图形时的结构示意图，如图8b所示，对发光层薄膜12和空穴传输层薄膜13进行一次构图工艺，以同时形成空穴传输层7和发光层6的图形，此时电子传输层薄膜11未被图形化。其中，在对发光层薄膜12和空穴传输层薄膜13进行刻蚀以分别形成发光层6和空穴传输层7的图形时，可采用感应耦合等离子体(Inductively Couple Plasma，简称ICP)刻蚀工艺进行刻蚀。
需要说明的是，本发明中的构图工艺是指包括光刻胶涂敷、曝光、显影、刻蚀、光刻胶剥离等工艺步骤。
步骤103、对电子传输层薄膜进行一次构图工艺，以形成多个电子传输层的图形，电子传输层与发光组一一对应，位于同一发光组中的全部发光单元共用同一电子传输层。
图8c为本发明中形成电子传输层的图形时的结构示意图，如图8c所示，按照预先设定的发光组划分计划，对电子传输层薄膜进行构图工艺，以形成与发光组数量相等的多个电子传输层3的图形，其中，每个发光组对应于一个电子传输层3，且位于同一发光组中的全部发光单元2共用同一个电子传输层3。其中，在对电子传输层薄膜11进行刻蚀以形成电子传输层3的图形时，可采用ICP刻蚀工艺进行刻蚀。
步骤104、在电子传输层的上方形成第一导电薄膜，并对第一导电薄膜进行一次构图工艺，以在电子传输层的上方形成阴极电极的图 形，位于同一发光组中的发光单元共用同一阴极电极。
参见图4所示，在步骤104中，通过一次构图工艺在电子传输层3的上方形成阴极电极5，且每个电子传输层3的图形的上方仅形成一个阴极电极5的图形，此时同一发光组中的全部发光单元2共用同一阴极电极5。
本实施例中，阴极电极5的材料可选自钛、金中的至少一种。
步骤105、在空穴传输层的上方形成第二导电薄膜，并对第二导电薄膜进行一次构图工艺，以在空穴传输层的上方形成阳极电极的图形。
参见图4，在步骤105中，通过一次构图工艺在空穴传输层7的上方形成阳极电极4。本实施例中，可选地，阳极电极4和阴极电极5的材料可分别选自钛、金中的至少一种。
需要说明的是，本实施例中步骤105也可先于步骤104执行。
此外，在本实施例中，当阳极电极4与阴极电极5所选用的材料相同时，也可同时在电子传输层3和空穴传输层7的上方形成一层导电薄膜层，并通过一次构图工艺同时形成包括阳极电极4和阴极电极5的图形。
实施例五
图9为本发明实施例五提供的一种发光元件的制备方法的流程图，如图9所示，该制备方法用于制备上述实施例二中的发光元件，该制备方法包括：
步骤201、在衬底基板上依次形成电子传输层薄膜、发光层薄膜和空穴传输层薄膜。
步骤202、对发光层薄膜和空穴传输层薄膜进行一次构图工艺，以形成各发光单元的空穴传输层和发光层的图形。
步骤203、对电子传输层薄膜进行一次构图工艺，以形成多个电子传输层的图形，电子传输层与发光组一一对应，位于同一发光组中的全部发光单元共用同一电子传输层，电子传输层的形状为板状且沿第一方向延伸，位于同一发光组中的全部发光单元沿第一方向排列。
需要说明的是，本实施例中的步骤201～步骤203的过程与上述 实施例四中的步骤101～步骤103的过程相同，具体内容可参见上述实施例四中相应描述，此处不再赘述。
步骤204、在空穴传输层的上方形成电流扩展层薄膜，并对电流扩展层薄膜进行一次构图工艺以形成电流扩展层的图形。
图10a为本发明中形成电流扩展层时的结构示意图，如图10a所示，对为导电薄膜的电流扩展层薄膜进行一次构图工艺以形成电流扩展层8的图形，其中电流扩展层8位于空穴传输层7的上方。可选地，电流扩展层8的材料选自镍或金中的至少一种。
步骤205、在电子传输层的上方形成第一导电薄膜，并对第一导电薄膜进行一次构图工艺，以在电子传输层的上方成第一子阴极电极图形和第二子阴极电极图形，位于同一发光组中的发光单元共用相同的第一子阴极电极图形和第二子阴极电极图形，第一子阴极电极图形和第二子阴极电极图形分别位于电子传输层的两端。
步骤206、在电流扩展层的上方形成第二导电薄膜，并对第二导电薄膜进行一次构图工艺，以在电流扩展层的上方形成阳极电极的图形。
步骤207、在电子传输层的上方形成第三导电薄膜，并对第三导电薄膜进行一次构图工艺，以在电子传输层的上方且未被发光层覆盖的区域形成导电图形，导电图形与发光单元一一对应且位于对应的发光单元的周边，导电图形的电阻小于对应的发光单元的阴极电极到阳极电极之间的电阻。
图10b为本发明中形成阳极电极、阴极电极和导电图形时的结构示意图，如图10b所示，本实施例中通过步骤205在电子传输层3的两端分别形成第一子阴极电极图形51和第二子阴极电极图形52，可有效提升位于同一发光组中各发光单元2所流过的电流的均一性。通过步骤207在各发光单元2的周边形成导电图形9，可在提升发光元件中各发光单元2所流过的电流的均一性的同时，还可有效降低驱动电流。具体原理可参见上述实施例二中的描述，此处不再赘述。
本实施例中，可选地，导电图形9的形状为环状，以环绕对应的发光单元2。
需要说明的是，本实施例中对步骤205、步骤206和步骤207的执行顺序不作限定，即步骤206可先于步骤205执行，步骤207可先于步骤205和步骤206执行。
此外，在本实施例中，当阳极电极4、第一子阴极电极图形51、第二子阴极电极图形52和导电图形9所选用的材料相同时，作为步骤205至步骤207的替代，也可在电子传输层3和电流扩展层8的上方形成一层导电薄膜层，并通过一次构图工艺以同时形成包括：阳极电极4、第一子阴极电极图形51、第二子阴极电极图形52和导电图形9的图形。
步骤208、在发光单元的周边形成环绕发光单元的遮光罩，遮光罩位于导电图形的上方。
参见图5和图6所示，本实施例中优选将遮光罩10的横截面形状设计的与导电图形9的横截面形状相同，此时可采用上述步骤207中所使用的掩膜版来制备遮光罩10，从而可有效减少生产过程中使用的掩膜版的数量，进而节省了生产成本。
可选地，上述步骤201至步骤204也可以采用以下步骤来替代：
首先，在衬底基板上依次形成电子传输层薄膜、发光层薄膜、空穴传输层薄膜和电流扩展层薄膜；
然后，对发光层薄膜、空穴传输层薄膜和电流扩展层薄膜进行一次构图工艺，以形成各发光单元的空穴传输层、发光层和电流扩展层的图形，如图10b所示；
之后，对电子传输层薄膜进行一次构图工艺，以形成电子传输层的图形。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (20)

  1. 一种发光元件，包括：衬底基板和设置于衬底基板上的多个发光单元，每个发光单元包括：阳极电极、空穴传输层、发光层、电子传输层和阴极电极，全部发光单元被划分为多个发光组，位于同一发光组中的所述发光单元共用同一电子传输层和阴极电极。
  2. 根据权利要求1所述的发光元件，其中，每个所述发光单元的周边对应设置有导电图形，所述导电图形的电阻小于对应的所述发光单元的阴极电极到阳极电极之间的电阻。
  3. 根据权利要求2所述的发光元件，其中，所述导电图形位于所述电子传输层的上方且未被所述发光层覆盖的区域。
  4. 根据权利要求2所述的发光元件，其中，每个所述发光单元的周边对应设置有环绕所述发光单元的遮光罩。
  5. 根据权利要求4所述的发光元件，其中，所述导电图形的形状为环状，所述遮光罩位于所述导电图形上。
  6. 根据权利要求2所述的发光元件，其中，所述导电图形的材料为金、铂、石墨烯中的至少一种。
  7. 根据权利要求1-6中任一项所述的发光元件，其中，位于同一所述发光组中的发光单元沿第一方向排列，所述电子传输层的形状为板状且沿所述第一方向延伸。
  8. 根据权利要求7所述的发光元件，其中，所述阴极电极包括：第一子阴极电极图形和第二子阴极电极图形，所述第一子阴极电极图形和所述第二子阴极电极图形分别位于所述电子传输层的两端。
  9. 根据权利要求1-8中任一项所述的发光元件，其中，所述阳极电极和所述空穴传输层之间设置有电流扩展层。
  10. 根据权利要求1所述的发光元件，其中，所述空穴传输层的材料为P型氮化镓；
    所述发光层的材料为氮化镓；
    所述电子传输层的材料为N型氮化镓。
  11. 根据权利要求1所述的发光元件，其中，所述衬底基板为蓝宝石基板或玻璃基板。
  12. 一种发光元件的制备方法，包括：
    在衬底基板的上方形成多个发光单元，每个发光单元包括：阳极电极、空穴传输层、发光层、电子传输层和阴极电极，全部发光单元被划分为多个发光组，位于同一发光组中的全部所述发光单元共用同一电子传输层和阴极电极。
  13. 根据权利要求12所述的发光元件的制备方法，其中，所述形成多个发光单元的步骤包括：
    在衬底基板上依次形成电子传输层薄膜、发光层薄膜和空穴传输层薄膜；
    对所述发光层薄膜和空穴传输层薄膜进行一次构图工艺，以形成各发光单元的空穴传输层和发光层的图形；
    对所述电子传输层薄膜进行一次构图工艺，以形成多个电子传输层的图形，所述电子传输层与所述发光组一一对应，位于同一发光组中的全部所述发光单元共用同一电子传输层；
    在电子传输层的上方形成第一导电薄膜，并对所述第一导电薄膜进行一次构图工艺，以在所述电子传输层的上方形成阴极电极的图形，位于同一发光组中的所述发光单元共用同一阴极电极；
    在空穴传输层的上方形成第二导电薄膜，并对所述第二导电薄膜进行一次构图工艺，以在所述空穴传输层的上方形成阳极电极的图形。
  14. 根据权利要求13所述的发光元件的制备方法，还包括：在电子传输层的上方形成第三导电薄膜，并对所述第三导电薄膜进行一次构图工艺，以在所述电子传输层的上方且未被所述发光层覆盖的区域形成导电图形，所述导电图形与所述发光单元一一对应且位于对应的所述发光单元的周边，所述导电图形的电阻小于对应的所述发光单元的阴极电极到阳极电极之间的电阻。
  15. 根据权利要求14所述的发光元件的制备方法，还包括：在所述发光单元的周边形成环绕所述发光单元的遮光罩。
  16. 根据权利要求15所述的发光元件的制备方法，其中，所述导电图形的形状为环状，所述导电图形和所述遮光罩采用同一掩膜版进行制备，所述遮光罩位于所述导电图形上。
  17. 根据权利要求13所述的发光元件的制备方法，其中，所述在所述空穴传输层的上方形成阳极电极的图形的步骤之前还包括：
    在所述空穴传输层的上方形成电流扩展层薄膜，并对所述电流扩展层薄膜进行一次构图工艺以形成电流扩展层的图形。
  18. 根据权利要求12-17中任一项所述的发光元件的制备方法，其中，位于同一所述发光组中的全部发光单元沿第一方向排列，所述电子传输层的形状为板状且沿所述第一方向延伸，所述阴极电极包括：第一子阴极电极图形和第二子阴极电极图形，所述第一子阴极电极图形和所述第二子阴极电极图形分别位于对应的所述电子传输层的两端。
  19. 根据权利要求12所述的发光元件的制备方法，其中，所述形成多个发光单元的步骤包括：
    在衬底基板上依次形成电子传输层薄膜、发光层薄膜、空穴传输层薄膜和电流扩展层薄膜；
    对发光层薄膜、空穴传输层薄膜和电流扩展层薄膜进行一次构图工艺，以形成各发光单元的空穴传输层、发光层和电流扩展层的图形；
    对电子传输层薄膜进行一次构图工艺，以形成电子传输层的图形；
    在电流扩展层和电子传输层上形成一层导电薄膜，通过一次构图工艺同时形成阳极电极、围绕发光单元的导电层、第一子阴极电极图形和第二子阴极电极图形。
  20. 根据权利要求19所述的发光元件的制备方法，还包括：在所述发光单元的周边形成环绕所述发光单元的遮光罩，其中所述遮光罩位于所述在所述导电图形上。
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CN113362726A (zh) * 2020-02-19 2021-09-07 群创光电股份有限公司 显示面板与拼接显示装置
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