二 1274525 九、發明說明： 【發明所屬之技術領域】 本發明係有關於有機電激發光顯示器，尤其有關於一 種具高開口率之有機電激發光構造及其製作方法。 【先前技術】 有機電激發光顯示器（OLED)，依驅動方式不同可分為 被動矩陣驅動OLED及主動矩陣驅動OLED，其主要係透過 電流驅動有機薄膜來發光，有機電激發光構造包含一陽極 層、一有機層與一陰極層。 為獲得高效率發光特性，有機電激發光顯示器一般所 用的方法是以蒸鍍法將有機材料製成有機電激發光構 造，其係使用金屬遮罩和真空蒸鍍成膜等製程將有機材料 微細圖案化。 請參閱「第1-1圖」、「第1-2圖」與「第1-3圖」 所示，係習知有機電激發光構造之陰極圖案化概要圖，該 基板1上設有一陽極層2與一陰極隔離壁3(如「第1-1圖」 所示），其中該陽極層2係具有長條狀平行排列之圖案 (pattern)，其於具有Y卜Y2方向之間隙7(如「第2圖」 所示，間隙7與該陰極隔離壁3垂直），該陰極隔離壁3 係於該基板1上形成所謂倒梯形（inverted trapezoid) 形狀的長條狀結構物，且呈X1 _X2方向之平行排列，其可 自動地分隔陰極。接著於該陰極隔離壁3與該陽極層2上 真空蒸鍍一有機層4(如「第1-2圖」所示）後，再真空蒸 鍍一陰極層5(如「第1-3圖」所示），該陰極層5即會因 J274525 為該陰極隔離壁3而自動圖案化為Χι_χ2方向之平行排 列。 請再一併參閱「第2圖」與「第3圖」所示，為習知 有機電激發光構造之晝素示意圖，其中p為一個晝素6之 長度，T為陰極隔離壁3之寬度，v為陽極層2平行排列 圖案的間隙7寬度，若把陰極隔離壁3設於晝素6之Π - X2 方向，陽極層2平行排列圖案的間隙7設於畫素6之Y1 -Y2 方向（如第2圖」所不）’則其有效發光顯示區域為 ((P-3V)*(P-T)) ’總面積為（ρ*ρ)，亦即其開口率為 (Ρ-3V)*(P-T)/P*P。此外若把陰極隔離壁3設於畫素6之 Y1-Y2方向，陽極層2平行排列圖案的間隙7設於畫素6 之XI-X2方向（如「第3圖」所示），則立開口率為 (P-3T)*(P-V)/P*P。因此可知如要提升開口率，需要減少 陰極隔離壁3之寬度與陽極層2長條狀平行排列圖案的間 隙7寬度。 此習知之製知，其需要陰極隔離壁3以自動圖案化陰 極層5，然陰極隔離壁3的解析度提升不易，因而開口率 難以加以提升，因此顯示器的開口率會因為陰極隔離壁3 的存在而減少，且為製造出倒梯形之結構，其需要使^價 格昂貴的化學增益放大型光阻，且倒梯形之角度不易^ 制，因而造成良率偏低和成本過高的問題。 【發明内容】 爰是，為解決上述之缺失，本發明之主要目的在於提 供一種有機電激發光裝置，其具高開口率以發揮有機電激 J274525 發光顯示器高亮度之特性。 ，本發明之次要目的在於提供一種有機電激發光裝置 的焱作方法，以讓其製作出來的有機電激發光顯示器呈 開口率。 ^ 本發明係為一種高開口率有機電激發光裝置，其包含 承载構造與一具有複數個子畫素之有機電激發光構 k，忒承載構造包含一基板，該基板表面設有一訊號傳輸 φ 層，而該基板及該訊號傳輪層表面設有複數個條型凸體， 且該條型凸體係為長條狀且彼此相互平行排列地設於該 基板上，該條型凸體分別於軸線方向設有兩相對之一第一 侧面及一第二側面，該第一侧面與該基板之夾角呈一鈍 角，該第二侧面與該基板失角呈一銳角，該有機電激發光 構造没於該承載構造具有該訊號傳輸層之一面，且該有機 電激發光構造於各條型凸體之第二側面下方分別形成有 一缺口0 φ 【實施方式】 為俾使貴委員對本發明之特徵、目的及功效，有著 更加深入之瞭解與認同，茲列舉較佳實施例並配合圖式說 ' 明如后： ' 請參閱「第4圖」所示，其為本發明之條型凸體30 之外觀示意圖，其係為長條狀，其可設於一基板15上， 該條型凸體30分別於軸線方向設有兩相對之一第一側面 301及一第二側面302，且該第一侧面3〇1與該基板15之 夾角呈一純角’該弟一側面302與該基板15夾角呈一銳 ：J274525 角。 若該條型凸體30為有機材料，則其可利用斜向曝光 加以製作完成，其製作方法包含有機材料塗佈、預烤、斜 向曝光、顯影、固烤等等程序，且該條型凸體30之材料 可分為負型光阻與正型光阻兩種，請再參閱「第5-1圖」 與「第5-2圖」所示，其為該條型凸體30為負型光阻之 製造流程示意圖，首先其係在該基板15上塗佈一有機材 料62(條型凸體30之材料），並經適當溫度之烘烤，使其 稍微固化，再利用一具長條狀平行排列圖案之光罩50與 一斜向之曝光光線64的曝光，再經顯影、固烤之後，即 完成具第一側面301與第二側面302之條型凸體30的製 作。請再參閱「第6-1圖」與「第6-2圖」所示，為該條 型凸體30為正型光阻之製造流程示意圖，其大致流程與 前述者相同，有所不同者在於其使用的光罩51，與前述使 用的光罩50的遮蔽區域剛好為互補。 請再參閱「第7-1圖」到「第7-4圖」所示，若該條 型凸體30為無機材料，則其係利用斜向蝕刻加以製作完 成，其製作方法包含鍍膜、光阻塗佈、預烤、曝光、顯影、 固烤、斜向乾式蝕刻無機材料、剝離光阻等程序，首先其 係在該基板15上鍍上一無機材料66(條型凸體30之材 料），接著再鍍上一光阻60並經適當溫度烘烤該光阻60， 使其稍微固化，再利用一具長條狀平行排列圖案之光罩52 與一曝光光線64的曝光，再經顯影、固烤之後，於該無 機材料66上形成長條狀平行排列圖案且具保護作用之光 :1274525 阻6 Ο ’接著利用蚀刻氣體6 8斜向乾式餘刻該無機材料6 6 後，再將該光阻60剝離，即完成具第一側面301與第二 側面302之條型凸體30的製作。 請參閱「第8-1圖」與「第8-2圖」所示，其為本發 明有機電激發光裝置之第一實施例，其為被動矩陣驅動 OLED，其包含一承載構造10與一具有複數個子晝素之有 機電激發光構造40，該承載構造10包含有一基板15，該 基板15表面設有一訊號傳輸層20,且該訊號傳輸層20係 具有長條狀平行排列之圖案以作為電性傳導之功用，而該 基板15與該訊號傳輸層20上設有複數條型凸體30,且該 訊號傳輸層20並與該條型凸體30之軸向垂直。 該有機電激發光構造40包含一第一電極層401、一有 機層402與一第二電極層403，且該有機電激發光構造40 設於該承載構造10具有該訊號傳輸層20之一面，且藉由 該條型凸體30之第一侧面301設於該條型凸體30上，同 時該有機電激發光構造40舖設於該訊號傳輸層20與該基 板15之上，且由該基板15與該訊號傳輸層20連續延伸 至該條型凸體30上，並於該條型凸體30之第二侧面302 下方形成一缺口而斷離，又該有機電激發光構造40之第 一電極層401具長條狀平行排列之圖案，而於垂直該條型 凸體30之軸向方向具有複數平行排列之子晝素間隙70(請 參閱「第8-1圖」所示，子晝素間隙70與該條型凸體30 之軸向垂直），讓該第一電極層401藉由該子晝素間隙70 與該條型凸體30之第二侧面302形成複數個獨立區域， :1274525 該複數個獨立區域即可作為不同發光區域子晝素（R、G、 B)之用。 第一實施例有機電激發光構造40之子晝素（R、G、B) 於垂直該條型凸體30軸向的方向，會因為該條型凸體30 之第二侧面302上的缺口而斷離，因此於該方向不需要保 留間隙來防止電性連接，因而可減少不發光的區域，提高 發光區域之開口率。 於第一實施例中若P為晝素80之長度，W為子晝素間 隙70之寬度，晝素80具有R、G、B三個子晝素，其分 別為有機電激發光構造40之顯示區域，則其開口率為 (P-3W)* P/P*P。 請參閱「第9-1圖」與「第9-2圖」所示，其為本發 明有機電激發光裝置之第二實施例，與第一實施例相較， 其各層結構特徵大致與第一實施例相同，其包含有承載構 造10、基板15、訊號傳輸層20、複數個條型凸體30與有 機電激發光構造40等結構，其有所不同者在於，該條型 凸體30於像素80上的配置方向與第一實施例不同。 因此第二實施例有機電激發光構造40之子晝素於平 行該條型凸體30軸向的方向，會因為該條型凸體30之第 二側面302下的缺口而斷離，因此於該方向不需要保留間 隙來防止電性連接，因而可減少不發光的區域，提高發光 區域之開口率。 於第二實施例中若P為晝素80之長度，W為子晝素間 隙70之寬度，晝素80具有R、G、B三個子晝素，其分 二1274525 ' 別為有機電激發光構造40之顯示區域則其開口率為 (P-W)* P/P*P，相較第一實施例而言，其開口率更高。 如上所述之兩個實施例，如其應用於下部發光有機電 激發光顯示器（Bottom Emission OLED)之時，則古亥美板 15、該第一電極層401與該條型凸體30需為透明材質所 製成，而該訊號傳輸層20，可以採用透明材質或是縮小其 線寬即可。如其應用於上部發光有機電教發光顯示器（τ〇ρ Emission 0LED)之時，則該第二電極層4〇3需為透明材質 鲁所製成。如其應用於雙面發光有機電激發光顯示器 (Double Emission 0LED)之時，則該基板η、該第一電極 層401、該第二電極層403與該條型凸體3〇需為透明材質 所衣成，同樣的該訊號傳輸層2〇,可以採用透明材質或是 小其線寬即可。 、/而如上所述第一實施例與第二實施例之有機電激發 $構裝置的製造方法，其包含：於基板15製作訊號傳輸 • 二20以作為電性傳導之功能；於該訊號傳輸層2〇製作複 數t條型凸體30 ;製作有機電激發光構造40，讓有機電 ’=光構造40藉由條型凸體3〇之第一側面3〇1設於條型 - 〇體3〇卜 仏a ’同時讓有機電激發光構造40鋪設於該訊號傳 製、生，二暴板15之上，即可完成有機電激發光裝置的 ^其詳細方法分述如下。 係具^先為於基板15製作訊號傳輸層20 ;訊號傳輸層20 製作方長條狀平行排列之圖案以作為電性傳導之功能，其 去為先在基板15上鍍上導電性材料，接著利用黃 11 J274525 光餘·程做出長條狀平行排列之圖案。 30 · H為於該A7虎傳輸層20上製作複數個條型凸體 上，# ^ &體3G係為長條狀且平行排列S於該基板15 排石,Ά型凸體3G之轴向與該訊號傳輸層20長條狀平行 2之圖Ϊ垂直，該條型凸體30分別於轴線方向設有兩 鱼^一第一侧面3〇1及一第二側面302,該第一侧面301 H土板15之夾角呈—鈍角，該第二側面302與該基板 :角呈一銳角，且如前文所述，該條型凸體3〇的製作 方法依據材料的不同有「第5—10」、「第5一2圖」與「第 圖^ :「第6-1圖」兩種做法，在此便不再多述。 最後為I作-有機電激發光構造4()，讓該有機電激發 =構造40藉由該條型凸體3〇之第一侧面3〇1設於該條型 梢f 3〇上，同時讓該有機電激發光構造40鋪射於該訊號 人兩^! 20與該基板15之上，該有機電激發光構造4〇包 •第電極層4〇1、一有機層402與一第二電極層403， 該第-電極層4_乍方法係有兩種，其中電一V其： 利用具長條狀平行排列圖案之遮罩（shadQW mask)， 以錢膜方式直接錄上第一電極層4(n，而另—種則是先參 亡導電材料作為第-電極層4(H，再以黃光餘刻方式製‘ 出長條狀平行排列圖案。 若要於該第一電極層4〇1上形成相同材料之該有機居 查〇2 ’則其可以直接蒸鍍即可完成若需依據不同子曰 ,素的發光需求，而於不同之位置鍍上不同之有機材料， 則其可以利用蔽蔭遮罩（shadow mask)將不需鍍膜的區域 12 :1274525 \ 區域遮蔽起來，再予以蒸鍍即可完成。而要在該有機層402 上製作該第二電極403，其可以直接鍍膜一導電材料即 可，如上所述即可完成該有機電激發光構造40的製作。 此外請參閱「第10圖」所示，本發明之有機電激發 光構造亦可使用於主動矩陣驅動OLED，其結構包含有基板 15、薄膜電晶體陣列90、條型凸體30與該有機電激發光 構造40，該基板15上配置有該薄膜電晶體陣列90(TFT array)當作訊號傳輸層之功能，該薄膜電晶體陣列90係 ® 包含複數個薄膜電晶體、複數列電極與複數行電極，各個 薄膜電晶體係分別與列電極與行電極連接。 該條型凸體30分別於軸線方向設有兩相對之一第一 側面301及一第二側面302，該第一側面301與該基板15 之夾角呈一鈍角，該第二側面302與該基板15夾角呈一 銳角。 該有機電激發光構造40包含第一電極層401、有機層 I 402與第二電極層403，且該有機電激發光構造40藉由該 條型凸體30之第一側面301設於該條型凸體30上，同時 該有機電激發光構造40舖設於該薄膜電晶體陣列90與該 基板15之上，該有機電激發光構造40會藉著該條型凸體 30之第一側面301，由該基板15與該薄膜電晶體陣列90 連續延伸至該條型凸體30上，且有機電激發光構造40於 該條型凸體30之第二側面302下方形成一缺口而斷離， 因此其同樣可藉由該條型凸體30而增加機電激發光元件 40的顯示區域，以增加開口率。 13 :1274525 ' 如上所述，本發明之有機電激發光構造40於該條型 凸體30之第二侧面302下方形成缺口而斷離，因而於該 方向不同子晝素之有機電激發光構造40不需要間隙來防 止電性連接，其可讓各子晝素於一軸向方向無間距，其可 增加顯示區域，進而提高開口率。 惟上述僅為本發明之較佳實施例而已，並非用來限定 本發明實施之範圍。即凡依本發明申請專利範圍所做的均 等變化與修飾，皆為本發明專利範圍所涵蓋。 *賴單說明】 第1-1圖，係習知陰極圖案化概要圖一。 第1-2圖，係習知陰極圖案化概要圖二。 第1-3圖，係習知陰極圖案化概要圖三。 第2圖，係習知有機電激發光構造之晝素示意圖一。 第3圖，係習知有機電激發光構造之晝素示意圖二。 第4圖，係本發明條型凸體之結構示意圖。 I 第5-1圖到第5-2圖，係本發明條型凸體採用負光阻材 料之斜向曝光製造示意圖。 第6-1圖到第6-2圖，係本發明條型凸體採用正光阻材 料之斜向曝光製造示意圖。 第7-1圖到第7-4圖，係本發明條型凸體之斜向蝕刻製 造不意圖。 第8-1圖，係本發明第一實施例之像素正面俯視示意圖。 第8-2圖，係第8-1圖A-A處之剖視示意圖。 第9-1圖，係本發明第二實施例之像素正面俯視示意圖。 14 ；J274525 ' 第9-2圖，係第9-1圖B-B處之剖視示意圖。 第10圖，係本發明應用於主動矩陣驅動OLED之結構示 意圖。 【主要元件符號說明】 習知 1 :基板 2 :陽極層 3:陰極隔離壁 • 4:有機層 5 :陰極層 6 :晝素 7 :間隙 本發明 10 :承載構造 15 :基板 20 :訊號傳輸層 ® 30 ··條型凸體 301 ··第一侧面 302 :第二側面 40 :有機電激發光構造 401 :第一電極層 402 :有機層 403 :第二電極層 50、51、52 :光罩 15 二1274525 62 :有機材料 64 :曝光光線 6 6 :無機材料 68 :蝕刻氣體 60 :光阻 70 :子晝素間隙 80 :晝素 90 :薄膜電晶體陣列II. 1274525 IX. Description of the Invention: [Technical Field] The present invention relates to an organic electroluminescent display, and more particularly to an organic electroluminescent light structure having a high aperture ratio and a method of fabricating the same. [Prior Art] Organic electroluminescent display (OLED) can be divided into passive matrix driving OLED and active matrix driving OLED according to different driving modes, which mainly emit light by driving an organic film through current, and the organic electroluminescent structure comprises an anode layer. An organic layer and a cathode layer. In order to obtain high-efficiency luminescence characteristics, an organic electroluminescent display generally uses a method in which an organic material is made into an organic electroluminescence structure by a vapor deposition method, and the organic material is finely formed by a process such as a metal mask and a vacuum evaporation film formation. Patterned. Please refer to "1-1", "1-2" and "1-3" for a schematic diagram of a cathode patterning of a conventional organic electroluminescent structure. The substrate 1 is provided with an anode. The layer 2 and a cathode partition wall 3 (as shown in "1-1"), wherein the anode layer 2 has a pattern of long parallel rows arranged in a gap 7 having a Y-Y2 direction ( As shown in FIG. 2, the gap 7 is perpendicular to the cathode partition wall 3, and the cathode partition wall 3 is formed on the substrate 1 to form an elongated stripe structure of an inverted trapezoid shape, and is X1. The _X2 direction is arranged in parallel, which automatically separates the cathode. Then, an organic layer 4 is vacuum-deposited on the cathode partition wall 3 and the anode layer 2 (as shown in FIG. 1-2), and then a cathode layer 5 is vacuum-deposited (eg, "1-3" As shown in the figure), the cathode layer 5 is automatically patterned into a parallel arrangement in the direction of Χι_χ2 because J274525 is the cathode partition wall 3. Please refer to "Figure 2" and "Figure 3" together for a schematic diagram of a conventional organic electroluminescent structure, where p is the length of a halogen 6 and T is the width of the cathode barrier 3 , v is the width of the gap 7 of the anode layer 2 in a parallel arrangement pattern. If the cathode partition wall 3 is disposed in the Π-X2 direction of the halogen element 6, the gap 7 of the parallel arrangement pattern of the anode layer 2 is set in the Y1 -Y2 direction of the pixel 6 (If not shown in Figure 2), the effective light-emitting display area is ((P-3V)*(PT))' The total area is (ρ*ρ), that is, the aperture ratio is (Ρ-3V)* (PT)/P*P. Further, if the cathode partition wall 3 is disposed in the Y1-Y2 direction of the pixel 6, and the gap 7 of the parallel arrangement pattern of the anode layer 2 is disposed in the XI-X2 direction of the pixel 6 (as shown in "Fig. 3"), The aperture ratio is (P-3T)*(PV)/P*P. Therefore, it is understood that if the aperture ratio is to be increased, it is necessary to reduce the width of the gap between the width of the cathode partition wall 3 and the pattern of the anode layer 2 in a parallel pattern. It is known in the art that the cathode separation wall 3 is required to automatically pattern the cathode layer 5, and the resolution of the cathode separation wall 3 is not easy to be improved, so that the aperture ratio is difficult to be improved, so the aperture ratio of the display is due to the cathode barrier wall 3. It exists and is reduced, and in order to manufacture an inverted trapezoidal structure, it is required to make an expensive chemical gain amplification type resist, and the angle of the inverted trapezoid is difficult to control, resulting in a problem of low yield and high cost. SUMMARY OF THE INVENTION In order to solve the above-mentioned deficiencies, the main object of the present invention is to provide an organic electroluminescent device having a high aperture ratio to exhibit the high luminance of the organic electro-acoustic J274525 illuminating display. A secondary object of the present invention is to provide a method of fabricating an organic electroluminescent device such that the organic electroluminescent display produced thereby exhibits an aperture ratio. The present invention is a high aperture ratio organic electroluminescent device comprising a carrier structure and an organic electroluminescent structure having a plurality of sub-pixels, the germanium carrying structure comprising a substrate having a signal transmission layer φ layer And a plurality of strip-shaped protrusions are disposed on the surface of the substrate and the signal transmission layer, and the strip-shaped convex system is elongated and arranged on the substrate in parallel with each other, and the strip-shaped protrusions are respectively on the axis The direction is provided with two opposite first sides and a second side, the first side has an obtuse angle with the substrate, and the second side has an acute angle with the substrate, and the organic electroluminescent light structure is not The bearing structure has one surface of the signal transmission layer, and the organic electroluminescent light is formed under the second side of each strip-shaped protrusion to form a notch 0 φ. [Embodiment] The characteristics and purpose of the present invention are And the effect, with a deeper understanding and recognition, the preferred embodiment is illustrated and described with the following figure: 'See the following: 'Please refer to Figure 4, which is the strip-shaped convex body 30 of the present invention. A first embodiment of the present invention, which is disposed on a substrate 15. The strip-shaped protrusions 30 are respectively provided with two opposite first sides 301 and a second side 302 in the axial direction, and the first The angle between the side surface 3〇1 and the substrate 15 is a pure angle. The angle between the side surface 302 and the substrate 15 is sharp: J274525 angle. If the strip-shaped protrusion 30 is made of an organic material, it can be formed by oblique exposure, and the manufacturing method includes an organic material coating, pre-baking, oblique exposure, development, solid baking, and the like, and the strip type The material of the convex body 30 can be divided into a negative type resistor and a positive type resist. Please refer to "FIG. 5-1" and "5-2" for the strip type convex body 30. A schematic diagram of a manufacturing process of a negative photoresist, firstly coating an organic material 62 (a material of the strip-shaped convex body 30) on the substrate 15, and baking it at a suitable temperature to slightly cure it, and then using one The strip-shaped convex body 30 having the first side surface 301 and the second side surface 302 is completed after exposure of the strip-shaped parallel-arranged pattern mask 50 and an oblique exposure light 64, and then development and solid-baking. Please refer to "Figure 6-1" and "Figure 6-2" for a schematic diagram of the manufacturing process of the strip-shaped convex body 30 as a positive-type photoresist. The general flow is the same as the above, and the difference is different. The mask 51 used in it is exactly complementary to the masking area of the mask 50 used as described above. Please refer to "Fig. 7-1" to "Fig. 7-4". If the strip-shaped convex body 30 is made of an inorganic material, it is formed by oblique etching, and the manufacturing method includes coating and light. The process of resist coating, pre-baking, exposure, development, solid baking, oblique dry etching of inorganic materials, stripping photoresist, etc., firstly, an inorganic material 66 (material of the strip-shaped protrusions 30) is plated on the substrate 15. Then, a photoresist 60 is further plated and the photoresist 60 is baked at a suitable temperature to be slightly cured, and then exposed by a photomask 52 having a long parallel pattern and an exposure light 64, and then developed. After solid-baked, a long parallel pattern and a protective light are formed on the inorganic material 66: 1274525 is resistant to 6 Ο ' and then the inorganic material 6 6 is obliquely dried by an etching gas 6 8 , and then The photoresist 60 is peeled off, that is, the strip-shaped protrusion 30 having the first side surface 301 and the second side surface 302 is completed. Please refer to "8-1" and "8-2", which is a first embodiment of the organic electroluminescent device of the present invention, which is a passive matrix driven OLED comprising a carrier structure 10 and a An organic electroluminescent structure 40 having a plurality of sub-halogens, the carrier structure 10 includes a substrate 15 having a signal transmission layer 20 on the surface thereof, and the signal transmission layer 20 has a pattern of long parallel lines arranged as For the function of the electrical conduction, the substrate 15 and the signal transmission layer 20 are provided with a plurality of strip-shaped protrusions 30, and the signal transmission layer 20 is perpendicular to the axial direction of the strip-shaped protrusions 30. The organic electroluminescent structure 40 includes a first electrode layer 401, an organic layer 402, and a second electrode layer 403, and the organic electroluminescent structure 40 is disposed on the carrier structure 10 having one side of the signal transmission layer 20. The first side surface 301 of the strip-shaped protrusion 30 is disposed on the strip-shaped protrusion 30, and the organic electro-exposure light structure 40 is disposed on the signal transmission layer 20 and the substrate 15, and the substrate is 15 and the signal transmission layer 20 continuously extend to the strip-shaped protrusion 30, and a notch is formed under the second side surface 302 of the strip-shaped protrusion 30 to be separated, and the first of the organic electro-optic structure 40 is further The electrode layer 401 has a pattern of long parallel rows, and has a plurality of parallel pixel channels 70 in the axial direction perpendicular to the strip-shaped protrusions 30 (see "8-1"). The gap 70 is perpendicular to the axial direction of the strip-shaped protrusion 30, so that the first electrode layer 401 forms a plurality of independent regions with the second side 302 of the strip-shaped protrusion 30 by the sub-halogen gap 70: 1274525 The plurality of independent regions can be used as the sub-element (R, G, B) of different illuminating regions.The sub-element (R, G, B) of the organic electroluminescent light structure 40 of the first embodiment is perpendicular to the axial direction of the strip-shaped protrusion 30, and may be due to a gap on the second side 302 of the strip-shaped protrusion 30. Since it is disconnected, it is not necessary to retain a gap in this direction to prevent electrical connection, thereby reducing the area where no light is emitted and increasing the aperture ratio of the light-emitting area. In the first embodiment, if P is the length of the halogen 80, W is the width of the sub-tenk gap 70, and the halogen 80 has three sub-halogens of R, G, and B, which are respectively displays of the organic electroluminescent structure 40. For the area, the aperture ratio is (P-3W)* P/P*P. Please refer to "No. 9-1" and "FIG. 9-2", which is a second embodiment of the organic electroluminescent device of the present invention. Compared with the first embodiment, the structural characteristics of each layer are substantially the same as those of the first embodiment. In the same embodiment, the structure includes a carrier structure 10, a substrate 15, a signal transmission layer 20, a plurality of strip-shaped protrusions 30, and an organic electro-optic structure 40, which are different in that the strip-shaped protrusions 30 are different. The arrangement direction on the pixel 80 is different from that of the first embodiment. Therefore, the sub-element of the organic electroluminescent light structure 40 of the second embodiment is parallel to the axial direction of the strip-shaped convex body 30, and is broken off due to the notch under the second side surface 302 of the strip-shaped convex body 30. The direction does not need to leave a gap to prevent electrical connection, thereby reducing the area that does not emit light and increasing the aperture ratio of the light-emitting area. In the second embodiment, if P is the length of the halogen 80, W is the width of the sub-tenk gap 70, and the halogen 80 has three sub-halogens of R, G, and B, which are divided into two 1274525 ' The display area of the structure 40 has an aperture ratio (PW)*P/P*P, which is higher than that of the first embodiment. The two embodiments as described above, when applied to a BOTO Emission OLED, the Gurheim board 15, the first electrode layer 401 and the strip-shaped protrusion 30 need to be transparent. The material is made of a material, and the signal transmission layer 20 can be made of a transparent material or reduced in line width. When it is applied to an upper-emitting organic illuminating display (τ〇ρ Emission 0LED), the second electrode layer 4〇3 is made of a transparent material. When it is applied to a double-sided light-emitting organic electroluminescent display (Double Emission 0LED), the substrate η, the first electrode layer 401, the second electrode layer 403, and the strip-shaped protrusion 3 need to be transparent materials. The same signal transmission layer 2〇 can be made of transparent material or small line width. And the manufacturing method of the organic electro-excitation device of the first embodiment and the second embodiment as described above, comprising: fabricating a signal transmission on the substrate 15; the function of the second 20 as an electrical conduction; and transmitting the signal Layer 2 is formed into a plurality of t-shaped protrusions 30; an organic electro-optic structure 40 is formed, and the organic electric-light structure 40 is disposed on the strip-body by the first side 3〇1 of the strip-shaped protrusions 3〇 3 〇 仏 a ' At the same time, the organic electro-optic structure 40 is placed on the signal transmission, raw, and the second slab 15 to complete the organic electro-optic device. The detailed method is as follows. The device first produces a signal transmission layer 20 on the substrate 15; the signal transmission layer 20 is formed in a strip-like parallel pattern to function as an electrical conduction, which is first plated with a conductive material on the substrate 15, and then Use the yellow 11 J274525 optical residue to make a long parallel pattern. 30 · H is formed on the A7 tiger transmission layer 20 on a plurality of strip-shaped convex bodies, # ^ & body 3G is a long strip and parallel arranged S on the substrate 15 row of stones, the axis of the Ά-shaped convex body 3G The strip-shaped protrusions 30 are respectively disposed in the axial direction with two fishes, a first side surface 3〇1 and a second side surface 302, the first side being perpendicular to the pattern of the signal transmission layer 20 The angle of the side surface 301 H soil plate 15 is an obtuse angle, and the second side surface 302 forms an acute angle with the angle of the substrate, and as described above, the manufacturing method of the strip type convex body 3 is "5th according to the material. -10", "5:2" and "Fig. ^: "6-1" are not mentioned here. Finally, I is an organic electroluminescent structure 4 (), and the organic electro-excitation = structure 40 is provided on the strip-shaped tip f 3 藉 by the first side 3 〇 1 of the strip-shaped protrusion 3 , The organic electroluminescent light structure 40 is spread on the signal board 2 and the substrate 15. The organic electroluminescent light structure 4 includes a first electrode layer 4, an organic layer 402 and a second layer. The electrode layer 403, the first electrode layer 4_乍 method is two kinds, wherein the electric one V: the first electrode is directly recorded by the money film by using a shadQW mask having a long parallel pattern Layer 4 (n, and the other type is the first-resistance conductive material as the first-electrode layer 4 (H, and then made by a yellow light-like method). The strip-shaped parallel arrangement pattern. To the first electrode layer 4 The organic material of the same material formed on the 1st can be directly vapor-deposited, and if it is required to be plated with different organic materials according to different sub-twisting and different positions, it can be utilized. The shadow mask is shielded from the area where the coating is not required, and then vapor deposited. The second electrode 403 is formed on the organic layer 402, and a conductive material can be directly coated, and the organic electroluminescent structure 40 can be fabricated as described above. Please also refer to FIG. The organic electroluminescent structure of the present invention can also be used in an active matrix driving OLED, the structure comprising a substrate 15, a thin film transistor array 90, a strip-shaped convex body 30 and the organic electroluminescent light structure 40, which are disposed on the substrate 15. The thin film transistor array 90 (TFT array) functions as a signal transmission layer, and the thin film transistor array 90 series includes a plurality of thin film transistors, a plurality of column electrodes and a plurality of row electrodes, and each of the thin film electrocrystal systems and columns An electrode is connected to the row electrode. The strip-shaped protrusions 30 are respectively provided with two opposite first side faces 301 and a second side face 302 in the axial direction, and the angle between the first side face 301 and the substrate 15 is an obtuse angle. The two sides 302 are at an acute angle to the substrate 15. The organic electroluminescent structure 40 includes a first electrode layer 401, an organic layer I 402 and a second electrode layer 403, and the organic electroluminescent structure 40 is formed by the strip. The first side 301 of the body 30 is disposed on the strip-shaped protrusion 30, and the organic electro-optic structure 40 is disposed on the thin film transistor array 90 and the substrate 15. The organic electro-optic structure 40 is The first side surface 301 of the strip-shaped protrusion 30 extends from the substrate 15 and the thin film transistor array 90 to the strip-shaped protrusion 30, and the organic electro-optic structure 40 is in the strip-shaped protrusion 30. A gap is formed under the two side faces 302 to be separated, so that the display area of the electromechanical excitation light element 40 can also be increased by the strip-shaped protrusion 30 to increase the aperture ratio. 13 : 1274525 ' As described above, the present invention The organic electro-optic structure 40 is notched below the second side 302 of the strip-shaped protrusion 30 to form a gap, so that the organic electro-optic structure 40 of different sub-cells in this direction does not require a gap to prevent electrical connection. It can make each sub-single have no spacing in one axial direction, which can increase the display area and thus increase the aperture ratio. The above are only the preferred embodiments of the present invention and are not intended to limit the scope of the present invention. That is, the equivalent changes and modifications made by the scope of the patent application of the present invention are covered by the scope of the invention. *Description] Figure 1-1 is a schematic diagram of a conventional cathode patterning. Figure 1-2 is a schematic diagram of a conventional cathode patterning diagram II. Figures 1-3 are schematic diagrams of a conventional cathode patterning diagram. Fig. 2 is a schematic diagram 1 of a conventional organic electroluminescent structure. Fig. 3 is a schematic diagram 2 of a conventional organic electroluminescent structure. Fig. 4 is a schematic view showing the structure of the strip-shaped convex body of the present invention. I, Fig. 5-1 to Fig. 5-2, are schematic views showing the oblique exposure manufacturing of the strip-shaped convex body of the present invention using a negative photoresist material. Figs. 6-1 to 6-2 are schematic views showing the oblique exposure manufacturing of the strip-shaped convex body of the present invention using a positive photoresist material. Figs. 7-1 to 7-4 show the oblique etching of the strip-shaped projection of the present invention. Figure 8-1 is a top plan view of the pixel of the first embodiment of the present invention. Figure 8-2 is a schematic cross-sectional view taken at A-A of Figure 8-1. Figure 9-1 is a top plan view of the pixel of the second embodiment of the present invention. 14; J274525 'Fig. 9-2, is a schematic cross-sectional view taken at B-B of Figure 9-1. Fig. 10 is a schematic view showing the structure of the present invention applied to an active matrix driving OLED. [Major component symbol description] Convention 1: Substrate 2: Anode layer 3: Cathode isolation wall • 4: Organic layer 5: Cathode layer 6: Alizarin 7: Gap The present invention 10: Bearing structure 15: Substrate 20: Signal transmission layer ® 30 · strip-shaped protrusion 301 · · first side 302 : second side 40 : organic electroluminescent structure 401 : first electrode layer 402 : organic layer 403 : second electrode layer 50 , 51 , 52 : mask 15 2 1274525 62 : Organic material 64 : Exposure light 6 6 : Inorganic material 68 : Etching gas 60 : Photoresist 70 : Sub-halogen gap 80 : Alizarin 90 : Thin film transistor array