WO2017164252A1 - Dispositif et procédé de soudure - Google Patents

Dispositif et procédé de soudure Download PDF

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Publication number
WO2017164252A1
WO2017164252A1 PCT/JP2017/011518 JP2017011518W WO2017164252A1 WO 2017164252 A1 WO2017164252 A1 WO 2017164252A1 JP 2017011518 W JP2017011518 W JP 2017011518W WO 2017164252 A1 WO2017164252 A1 WO 2017164252A1
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WIPO (PCT)
Prior art keywords
substrate
bonding
wafer
unit
die
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PCT/JP2017/011518
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English (en)
Japanese (ja)
Inventor
泰人 小林
正義 孝多
Original Assignee
株式会社新川
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Publication date
Application filed by 株式会社新川 filed Critical 株式会社新川
Priority to JP2018507380A priority Critical patent/JP6589050B2/ja
Priority to KR1020187030094A priority patent/KR102106884B1/ko
Priority to SG11201810369UA priority patent/SG11201810369UA/en
Priority to CN201780030478.0A priority patent/CN109196628B/zh
Publication of WO2017164252A1 publication Critical patent/WO2017164252A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67736—Loading to or unloading from a conveyor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers

Definitions

  • the present invention relates to a bonding apparatus and a bonding method.
  • Patent Document 1 discloses a technique for bonding all dies having a plurality of grades on a wafer to a corresponding substrate without removing the wafer from the wafer holding unit.
  • the present invention has been made in view of such circumstances, and an object thereof is to provide a bonding apparatus and a bonding method capable of efficiently bonding a die to a substrate in units of grades by a simple mechanism.
  • a bonding apparatus includes a wafer holding unit that holds a wafer having a plurality of dies classified into a plurality of grades, a bonding head that bonds a die conveyed from the wafer holding unit to a substrate, and a bonding A transport lane for transporting a substrate for bonding by a head, a loader unit provided at one end of the transport lane, an unloader unit provided at the other end of the transport lane, and a die for each of a plurality of grades in the wafer
  • a bonding control unit for bonding each die of the wafer to a substrate corresponding to the grade of the die based on the classified mapping information, and each of the loader unit and the unloader unit accommodates a plurality of substrate containers.
  • the substrate container includes a plurality of substrates each belonging to the same grade,
  • the substrate is formed by bonding a plurality of dies belonging to the same grade, and the bonding control unit performs (i) a bonding head for at least one substrate transferred from the substrate container of the loader unit to the transfer lane. If all the dies on the substrate have been bonded, the substrate is sent as a die-mounted substrate to the substrate container of the unloader unit, while (ii) if all the dies on the substrate have not been bonded by the bonding head, It returns to the board
  • substrate It returns to the board
  • the bonding control unit completes bonding of all the dies of the substrate by the bonding head for at least one substrate transported from the substrate container of the loader unit to the transport lane, the substrate has been die-mounted.
  • the substrate is sent to the substrate container of the unloader unit as a substrate, and on the other hand, when all the dies on the substrate are not bonded by the bonding head, the substrate is returned to the substrate container of the loader unit as a die unmounted substrate. Yes. Therefore, the die unmounted substrate and the die mounted substrate can be processed uniformly, and the die can be efficiently bonded to the substrate in units of grade by a simple mechanism.
  • the bonding head may bond the die conveyed from the wafer holding unit on the substrate or on a die that has been bonded to the substrate.
  • the bonding head includes a first bonding head and a second bonding head disposed closer to the unloader part than the first bonding head, and the bonding control unit includes each of the first and second bonding heads. (I) or (ii) may be performed.
  • the bonding control unit may preferentially perform (i) on the second bonding head disposed on the unloader unit side.
  • the bonding control unit uses the first and second bonding heads (i) for a plurality of substrates belonging to the same grade transferred from the substrate container of the loader unit to the transfer lane based on the mapping information. Alternatively, (ii) may be performed.
  • the bonding control unit uses the first and second bonding heads (i) for a plurality of substrates belonging to different grades transferred from the substrate container of the loader unit to the transfer lane based on the mapping information. Alternatively, (ii) may be performed.
  • the mapping information may include information for classifying each die of the wafer into the first or second grade.
  • the bonding control unit performs (i) or (ii) on the first grade of the wafer held on the wafer holding unit, and then changes to the second grade of the wafer held on the wafer holding unit. On the other hand, (i) or (ii) may be performed.
  • the loader unit or the unloader unit includes a plurality of decks having different levels, and the plurality of decks includes a first deck that accommodates a substrate container belonging to the first grade, and a substrate that belongs to the second grade. And a second deck containing the body.
  • the loader unit or unloader unit may load or unload the substrate container by accessing an automatic transport mechanism that travels according to a predetermined lane in the manufacturing facility.
  • the bonding apparatus further includes a wafer loader unit that accommodates a plurality of wafers, and the bonding control unit sets the wafer as a processed wafer when all the dies to be bonded are completed in the wafer held by the wafer holding unit.
  • the wafer loader unit may return another wafer to the wafer holding unit.
  • the transport lane may be a single lane.
  • a bonding method includes a wafer holding unit that holds a wafer having a plurality of dies classified into a plurality of grades, a bonding head that bonds a die conveyed from the wafer holding unit to a substrate, and a bonding A transport lane for transporting a substrate for bonding by a head, a loader unit provided at one end of the transport lane, an unloader unit provided at the other end of the transport lane, and a die for each of a plurality of grades in the wafer
  • a plurality of substrates belonging to the same grade are accommodated, and the plurality of substrates are bonded to a plurality of dies belonging to the same grade, respectively, and the method is conveyed from the substrate container of the loader unit to the conveyance lane.
  • the substrate For at least one substrate, (i) when all the dies of the substrate are completed by the bonding head, the substrate is sent as a die-mounted substrate to the substrate container of the unloader unit, while (ii) all of the substrates are bonded by the bonding head. If the bonding of the die is not completed, the substrate is returned to the substrate container of the loader unit as a die unmounted substrate.
  • the substrate when all the dies of the substrate are completed by the bonding head for at least one substrate transported from the substrate container of the loader unit to the transport lane, the substrate is used as a die-mounted substrate in the unloader unit.
  • the substrate when all the dies of the substrate are not completely bonded by the bonding head, the substrate is returned to the substrate container of the loader unit as a die unmounted substrate. Therefore, the die unmounted substrate and the die mounted substrate can be processed uniformly, and the die can be efficiently bonded to the substrate in units of grade by a simple mechanism.
  • FIG. 1 is a plan view of a bonding apparatus according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the bonding apparatus according to the embodiment of the present invention.
  • FIG. 3 is a schematic view when the bonding apparatus according to the embodiment of the present invention is viewed from the Y-axis direction.
  • FIG. 4 is a schematic view when the bonding apparatus according to the embodiment of the present invention is viewed from the X-axis direction.
  • FIG. 5 is a flowchart illustrating a bonding method according to an embodiment of the present invention.
  • FIG. 6 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 7 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 1 is a plan view of a bonding apparatus according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the bonding apparatus according to the embodiment of the present invention.
  • FIG. 8 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 9 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 10 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 11 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 12 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 13 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 14 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 14 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 15 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 16 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 17 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 18 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 19 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 20 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 21 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 22 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 23 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 24 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 25 is a diagram illustrating Example 1 of the bonding method according to the embodiment of the present invention.
  • FIG. 26 is a diagram illustrating Example 2 of the bonding method according to the embodiment of the present invention.
  • FIG. 27 is a diagram illustrating Example 2 of the bonding method according to the embodiment of the present invention.
  • FIG. 28 is a diagram illustrating Example 2 of the bonding method according to the embodiment of the present invention.
  • FIG. 29 is a diagram illustrating Example 2 of the bonding method according to the embodiment of the present invention.
  • FIG. 30 is a diagram illustrating Example 2 of the bonding method according to the embodiment of the present invention.
  • FIG. 31 is a diagram illustrating Example 2 of the bonding method according to the embodiment of the present invention.
  • FIG. 32 is a diagram illustrating Example 2 of the bonding method according to the embodiment of the present invention.
  • FIG. 33 is a diagram illustrating Example 2 of the bonding method according to the embodiment of the present invention.
  • FIG. 1 schematically shows a plan view of a bonding apparatus 1 according to the present embodiment.
  • FIG. 2 is a cross-sectional view of the bonding apparatus 1 focusing on the wafer die transfer path.
  • 3 and 4 show a part of the bonding apparatus 1.
  • the bonding apparatus 1 includes a wafer loader unit 10, a wafer holding unit 12, first and second bonding heads 20 a and 20 b, a transfer lane 30, and one end of the transfer lane 30. , An unloader unit 50 provided at the other end of the transport lane 30, and a bonding control unit 60 (see FIG. 2) for controlling the bonding operation.
  • a direction parallel to the bonding target surface will be described as an XY axis direction
  • a direction perpendicular to the bonding target surface will be described as a Z axis direction.
  • the bonding apparatus 1 is a semiconductor manufacturing apparatus for bonding the die 72 of the wafer 70 to the substrate 80.
  • the die 72 has a front surface on which an integrated circuit pattern is formed and a back surface opposite to the front surface.
  • the bonding apparatus 1 described below has the die 72 so that the back surface of the die 72 faces the substrate 80. Is bonded to the substrate 80.
  • Such a bonding apparatus 1 is called a die bonding apparatus.
  • the plurality of dies 72 included in the wafer 70 are generally classified into a plurality of grades, and the dies 72 are bonded to the substrate 80 in units of grades. A plurality of dies 72 are bonded to the substrate 80.
  • the substrate 80 includes a plurality of die bonding regions to which a plurality of dies 72 are bonded. In each die bonding region, at least one or more dies 72 may be bondable. That is, another die 72 may be bonded onto the bonded die 72 in one die bonding region of the substrate 80. A plurality of dies 72 belonging to the same grade are bonded to one substrate 80.
  • the wafer 70 includes at least one die 74 belonging to the first grade and at least one die 76 belonging to the second grade (for example, a grade having characteristics inferior to those of the first grade).
  • the ratio of the first and second grade dies in the wafer 70 is not particularly limited.
  • the ratio may be such that the first grade occupies a majority of the second grade.
  • the ratio of the die 74 belonging to the first grade and the die 76 belonging to the second grade is 3: 1.
  • the grade classification can be determined depending on whether or not a predetermined characteristic condition such as an electric characteristic is satisfied.
  • the wafer loader unit 10 (for example, a wafer magazine) is configured to accommodate a plurality of wafers 70.
  • the wafer loader unit 10 accommodates, for example, a plurality of wafers 70 stacked in the Z-axis direction while supporting each wafer 70 in parallel with the XY-axis direction.
  • the dicing process has already been completed, and a wafer 70 having a plurality of dies separated into a plurality of individual pieces is accommodated.
  • the wafer holding unit 12 is configured to hold the wafer 70 transferred from the wafer loader unit 10 by a wafer transfer tool (not shown).
  • the wafer holding unit 12 holds the plurality of dies 72 by vacuum-sucking the wafer 70 or attaching the wafer 70 onto a film.
  • Each die 72 of the wafer 70 held by the wafer holding unit 12 may be temporarily transferred to the intermediate stage 16 by the pickup tool 14 in order to be bonded to the substrate 80 (see FIG. 2).
  • the die 72 is pushed up through the film from below the wafer holding unit 12, the die 72 on the film is sucked from above by the pickup tool 14, and the die 72 is conveyed to the intermediate stage 16.
  • the peripheral area of the die 72 to be transported in the wafer holding unit 12 may be moved downward.
  • the intermediate stage 14 can hold the die 72 by holding means similar to the wafer holding unit 12.
  • the wafer holding unit 12, the pickup tool 14, and the intermediate stage 16 may be configured to be movable at least in the XY axis directions by a driving mechanism such as a linear motor (not shown).
  • the bonding apparatus 1 includes first and second bonding heads 20a and 20b as a plurality of bonding heads. By providing a plurality of bonding heads, bonding to a plurality of substrates can be performed in parallel.
  • the first and second bonding heads 20 a and 20 b bond the die 72 picked up from the wafer holding unit 12 and transferred to the intermediate stage 14 to the substrate 80.
  • the first bonding head 20 a is disposed on the loader unit 40 side in the direction of the transport lane 30, and the second bonding head 20 b is disposed on the unloader unit 50 side in the direction of the transport lane 30.
  • the first and second bonding heads 20a and 20b may have the same configuration.
  • the first bonding head 20a will be described as an example with reference to FIG. 2.
  • a bonding tool 22 is attached to the first bonding head 20a via a Z-axis drive mechanism 21, and a predetermined distance from the bonding tool 22 is provided.
  • the imaging unit 24 is attached at a position separated by a distance.
  • the first bonding head 20a can be moved in the XY-axis direction by the XY table 26, whereby the bonding tool 22 and the imaging unit 24 move in the XY-axis direction while maintaining a predetermined distance from each other.
  • the bonding tool 22 and the imaging unit 24 are both fixed to the bonding head 20a.
  • the imaging unit 24 is not necessarily fixed to the bonding head 20a. It may be movable independently of the bonding tool 22.
  • the bonding tool 22 is, for example, a collet that holds the die 72 by suction.
  • a collet is configured to have a rectangular parallelepiped shape or a truncated cone shape, and is configured to contact and hold the outer edge of the die 72 from the surface side where the integrated circuit pattern of the die 72 is formed.
  • the collet as the bonding tool 22 has a central axis parallel to the Z-axis direction, and can be moved in the Z-axis direction and the XY-axis direction by the Z-axis drive mechanism 21 and the XY table 26, respectively.
  • the bonding tool 22 is attached to the bonding head 22a via a ⁇ -axis drive mechanism and a tilt drive mechanism (not shown), and is movable in the rotation and tilt directions (tilt direction) around the Z-axis by these drive mechanisms. .
  • the bonding tool 22 picks up the die 72 arranged on the intermediate stage 16 upward, conveys the picked die 72 from the intermediate stage 14 to the conveyance tool 30, and the die 72 is opposite to the surface. Can be bonded to the substrate 80 so that the back surface thereof faces the substrate 80.
  • the means for picking up the die 72 from the intermediate stage 16 by the bonding tool 22 may be the same as the means for picking up the die 72 from the wafer holding unit 12.
  • the imaging unit 24 acquires image information of the die 72 arranged on the intermediate stage 16.
  • the imaging unit 24 has an optical axis parallel to the Z-axis direction, and is configured to image the work surface of the intermediate stage 16.
  • the imaging unit 24 can move in the X and Y axis directions. For example, immediately before the die 72 is picked up by the bonding tool 22, the imaging unit 24 moves above the intermediate stage 16 to form a die 72 (an integrated circuit pattern is formed on the intermediate stage 16. Image information of the obtained surface). Based on the image information acquired by the imaging unit 24, the die 72 can be accurately picked up and conveyed by the bonding tool 22.
  • the configuration of the first bonding head 20a described above may be the same for the second bonding head 20b.
  • the transfer lane 30 is configured to transfer the substrate 80 for bonding by the first and second bonding heads 20a and 20b.
  • the transport lane 30 may be a single lane that transports one substrate 80 at a time in a single direction. In the example shown in FIG. 1, the transport lane 30 transports the substrate 80 in the X-axis direction.
  • the transfer lane 30 has a region 30a for bonding by the first bonding head 20a and a region 30b for bonding by the second bonding head 20b. At least one substrate 80 is transferred to each region (in the example shown in FIG. 1, one substrate 80 is transferred to each region).
  • Each of the loader unit 40 and the unloader unit 50 is configured to accommodate a plurality of substrate containers 90 (for example, a substrate magazine).
  • Each substrate container 90 is configured to accommodate a plurality of substrates 80.
  • the substrate container 90 accommodates, for example, a plurality of substrates 80 stacked in the Z-axis direction while supporting each substrate 80 in parallel with the XY-axis direction.
  • One substrate container 90 accommodates a plurality of substrates 80 belonging to the same grade.
  • the loader unit 40 is loaded with a substrate container 90 that houses a plurality of substrates 80 to be bonded, and the unloader unit 50 is unloaded with a substrate container that houses a plurality of substrates 80 that have already been bonded.
  • the loader unit 40 and the unloader unit 50 can have substantially the same configuration.
  • a substrate to which a die 74 belonging to the first grade is bonded and a substrate container in which the die 74 is accommodated are referred to as a substrate 84 and a substrate container 94, and a substrate to which a die 76 belonging to the second grade is bonded.
  • the substrate container in which the substrate is accommodated is referred to as a substrate 86 and a substrate container 96.
  • the die 72, the substrate 80, and the substrate container 90 are collectively referred to as the die 72, the substrate 80, and the substrate container 90 regardless of the grade.
  • FIGS. 3 is a schematic view when the bonding apparatus 1 is viewed from the Y-axis direction
  • FIG. 4 is a schematic view when the bonding apparatus 1 is viewed from the X-axis direction.
  • the loader unit 40 or the unloader unit 50 is configured to load or unload the substrate container 90 by accessing the automatic transport mechanism 18 that travels according to a predetermined lane 17 in the manufacturing facility.
  • the automatic transport mechanism 18 is, for example, an OHT (Overhead Hoist Transfer).
  • the OHT has a hoist mechanism that travels on a track (lane 17) installed on the ceiling of the manufacturing facility and moves up and down by belt drive, thereby directly accessing the loader unit 40 or the unloader unit 50 without human intervention. Then, the substrate container 90 can be loaded or unloaded.
  • the loader unit 40 has a plurality of decks having different levels in the Z-axis direction.
  • the loader unit 40 includes a discharge deck 42 that discharges the substrate containers 94 and 96 belonging to the first grade and the second grade, a first deck 44 that accommodates the substrate containers 94 belonging to the first grade, and a second deck. And a second deck 46 for accommodating a substrate container 96 belonging to a grade. Each of these decks accommodates one or a plurality of substrate containers 90.
  • the substrate containers 94 and 96 transported by the automatic transport mechanism 18 are distributed to the corresponding first deck 42 or second deck 44, respectively. Can do.
  • the loader unit 40 can move the substrate container 90 up and down in the Z-axis direction on the side opposite to the side accessed by the automatic transport mechanism 18 (the side opposite to the Y-axis direction in the example shown in FIG. 4).
  • the substrate container 90 can be transported over each level (the uppermost layer, the intermediate layer, and the lowermost layer) of the plurality of decks.
  • the transport lane 30 is located in the same layer (intermediate layer) as the first deck 42 in the Z-axis direction, and the substrate container 90 is moved to the same intermediate layer as the first deck 42, thereby transporting it.
  • the substrate 80 can be transferred to the lane 30.
  • the discharge deck 42 has areas 42b and 42c
  • the first deck 44 has areas 44b and 44c
  • the second deck 46 has areas 46b and 46c.
  • One substrate container 90 is accommodated in each region.
  • the substrate container 90 supplied to the loader unit by the automatic transport mechanism 18 is distributed to the first deck 44 or the second deck 46 via the region 44a or the region 46a located at different levels in the Z-axis direction.
  • the substrate container 90 of each deck can be moved to areas 42d, 44d, 46d located in different levels in the Z-axis direction, and the transport lane 30 passes through the area 44d which is the same level as the first deck 44.
  • substrate 80 with respect to can be delivered.
  • the unloader unit 50 may have a configuration similar to the configuration of the loader unit 40.
  • the unloader unit 50 includes a discharge deck 52 that discharges the substrate containers 94 and 96 belonging to the first and second grades, a first deck 54 that accommodates the substrate containers 94 belonging to the first grade, and a second grade. And a second deck 56 that accommodates the substrate container 96 belonging to the above.
  • Each of these decks accommodates one or a plurality of substrate containers 90.
  • the description of the loader unit 40 applies to the distribution of the substrate containers 90 conveyed by the automatic conveyance mechanism 18, the conveyance of the substrate containers 90 between the decks, and the delivery of the substrates 80 to the conveyance lane 30.
  • the unloader unit 50 will be described in more detail.
  • the discharge deck 52 has areas 52b and 52c
  • the first deck 54 has areas 54b and 54c
  • the second deck 56 has areas 56b and 56c.
  • One substrate container 90 is accommodated in each region.
  • the substrate container 90 supplied to the unloader unit by the automatic transport mechanism 18 is distributed to the first deck 54 or the second deck 56 via the region 54a or the region 56a located at different levels in the Z-axis direction.
  • the substrate container 90 of each deck is movable to areas 52d, 54d, and 56d located in different levels in the Z-axis direction, and the transport lane 30 passes through the area 54d that is the same level as the first deck 54.
  • substrate 80 with respect to can be delivered.
  • the bonding control unit 60 controls necessary processing for bonding by the bonding apparatus 1.
  • the bonding control unit 60 performs bonding processing by the first and second bonding heads 20a and 20b, replacement processing of the wafer 70 held by the wafer holding unit 12, and conveyance processing of the die 72, the substrate 80, and the substrate container 90. Including controlling.
  • the bonding control unit 60 is connected to each component of the bonding apparatus 1 so as to be able to transmit and receive signals within a range necessary for these processes, and controls the operation of each component.
  • the bonding control unit 60 controls necessary processing for bonding based on the mapping information stored in the storage unit 62.
  • the mapping information is information relating to the grade of each die 72 of the wafer 70 already described.
  • the bonding control unit 60 mounts the substrate 80 on the die. It is comprised so that it may send to the board
  • the bonding control unit 60 accommodates the substrate of the loader unit 40 using the substrate 80 as a die unmounted substrate. It is configured to return to the body 80. Details of such control will be described in the bonding method described later.
  • the bonding control unit 60 is connected to an operation unit (not shown) for inputting control information and a display unit (not shown) for outputting control information.
  • the necessary control information can be input by the operation unit while recognizing the screen.
  • the bonding control unit 60 is a computer device including a CPU and a memory.
  • the memory stores in advance a bonding program for performing processing necessary for bonding and other necessary information (the mapping information described above). Is stored).
  • the bonding control unit 60 is configured to be able to execute each process related to a bonding method described later (for example, a program for causing a computer to execute each process).
  • FIG. 5 is a flowchart for explaining the bonding method according to the present embodiment.
  • the bonding method according to this embodiment can be performed using the bonding apparatus 1 described above.
  • the substrate container 90 is supplied to the loader unit 40 and the unloader unit 50 (S10). Specifically, the loader unit 40 is loaded with a substrate container 90 containing a plurality of substrates 80 for bonding, and the unloader unit 50 is unloaded with a plurality of bonded substrates 80. An empty substrate container 90 is supplied. The substrate container 90 can be supplied to the loader unit 40 and the unloader unit 50 by the automatic transport mechanism 18.
  • the substrate 80 is transferred from the substrate container 90 of the loader unit 40 to the transfer lane 30 (S11). Specifically, the substrate container 90 is moved to the region 44d, and at least one substrate 80 is transported to the transport lane 30 from the substrate container 90 disposed in the region 44d.
  • one of the plurality of wafers 70 accommodated in the wafer loader unit 10 is taken out and held in the wafer holding unit 12.
  • the plurality of dies 72 included in the wafer 70 are classified into a plurality of grades, and the classification for each grade is stored in the storage unit 62 of the bonding control unit 60 as mapping information. Therefore, the bonding control unit 60 reads the mapping information of the wafer 70 from the storage unit 62 for each wafer 70 held by the wafer holding unit 12, and performs bonding control based on the mapping information.
  • a plurality of dies 72 are bonded to the substrate 80 (S12).
  • the bonding control unit 60 bonds a plurality of dies 72 of the corresponding grade to the substrate 80 for each grade of the substrate 80 transferred to the transfer lane 30 based on the mapping information.
  • the plurality of substrates 80 transferred to the transfer lane 30 may be bonded in parallel by the first and second bonding heads 20a and 20b.
  • the first and second bonding heads 20a and 20b may be bonded simultaneously or sequentially.
  • the first and second bonding heads 20a and 20b may bond the same grade in parallel, or may bond different grades in parallel. Specifically, the two substrates 84 belonging to the first grade are transported to the transport lane 30, and the plurality of dies 74 belonging to the first grade are transferred to the plurality of dies on each substrate 84 by the first and second bonding heads 20 a and 20 b. Bonding may be performed in the die bonding region.
  • the substrates 84 and 86 belonging to the first and second grades are conveyed to the conveyance lane 30, and a plurality of dies 74 belonging to the first grade are transferred to the substrate 84 by one of the first and second bonding heads 20 a and 20 b.
  • a plurality of dies 76 belonging to the second grade may be bonded to a plurality of die bonding regions of the substrate 86 by the other of the first and second bonding heads 20a and 20b.
  • a plurality of dies 74 may be stacked and bonded in one die bonding region.
  • the substrate 80 is sent to the unloader unit 50 (S13 YES and S14). That is, when all of the plurality of die bonding regions of the substrate 80 are filled with the die 74 and the substrate 80 is determined to be a die mounted substrate, the substrate 80 is disposed in the region 54d of the unloader unit 50. Accommodate.
  • a die-mounted substrate is preferentially generated with respect to the second bonding head 20b disposed on the unloader unit 50 side. Also good.
  • the substrate 80 is returned to the loader unit 40 (S13 NO and S15). That is, it is assumed that the die 74 is not bonded at all to the plurality of die bonding regions of the substrate 80 or the die 74 is bonded to only a part of the plurality of die bonding regions, and there is room for bonding of the die 74. Is determined to be a die-unmounted substrate, the substrate 80 is accommodated in the substrate accommodating body 90 disposed in the region 44d of the loader unit 40.
  • step S16 it is determined whether or not there are other dies 72 and substrates 80 to be bonded (S16). If it is determined that there are other dies 72 and substrates 80 to be bonded, the process returns to step S11 (YES in S16). ).
  • the bonding control unit 60 finishes bonding of all the dies 74 included in the wafer 70 held by the wafer holding unit 12, the bonding control unit 60 returns the wafer 70 to the wafer loader unit 10 as a processed wafer. Another wafer 70 is sent to the wafer holder 12. In this way, when it is determined that the bonding of all the dies 72 of the plurality of wafers 70 accommodated in the wafer loader unit 10 is completed and there is no other die 72 and substrate 80 to be bonded, the present embodiment is concerned. The bonding method is terminated (S16 NO).
  • all of the substrates 80 in the first and second bonding heads 20a and 20b are used for at least one substrate 80 transferred from the substrate container 90 of the loader unit 40 to the transfer lane 30.
  • the substrate 80 is sent as a die-mounted substrate to the substrate container 90 of the unloader unit 50, and all the dies 72 of the substrate 80 are bonded by the first and second bonding heads 20a and 20b. If not completed, the substrate 80 is returned to the substrate container 90 of the loader unit 40 as a die-unmounted substrate.
  • the die unmounted substrate and the die mounted substrate can be processed uniformly, and the die 72 can be efficiently bonded to the substrate 80 in units of grade by a simple mechanism.
  • the substrates 84a to 84i are substrates to which a plurality of dies 74 belonging to the first grade are bonded
  • the substrates 86a to 86c are substrates to which a plurality of dies 76 belonging to the second grade are bonded.
  • Example 1 Embodiment 1 will be described with reference to FIGS.
  • a plurality of substrates belonging to the same grade are transferred onto the transfer lane 30, and the first and second bonding heads 20a and 20b both bond dies belonging to the same grade to the substrate.
  • the arrangement of the substrate containers in the loader unit 40 and the unloader unit 50 is the same in the series of steps of the first embodiment. Further, in each of the loader unit 40 and the unloader unit 50, the plurality of substrate containers may be moved at the same time if their movement paths do not overlap. This embodiment is divided into the following series of steps (1) to (4).
  • a substrate container 94 belonging to the first grade is supplied to the loader unit 40 and the unloader unit 50 by the automatic transport mechanism 18. Specifically, in the loader unit 40, a substrate container 94 containing a plurality of substrates 84a, 84b, 84c belonging to the first grade is supplied to the region 44a, and in the unloader unit 50, an empty substrate container 94 is disposed in the region. 54a. During this time, among the plurality of wafers 70 accommodated in the wafer loader unit 10, one wafer 70 is put on standby to be transferred to the wafer holding unit 12.
  • the wafer 70 includes a plurality of dies 74 (12 in FIG. 6) belonging to the first grade and a plurality of dies 76 (four in FIG. 6) belonging to the second grade.
  • the substrate container 94 is moved to the region 44 c via the region 44 b on the first deck 44, while the substrate loader 94 is moved to the first region in the unloader unit 50. It moves to the area 54c through the area 54b on the deck 54.
  • the automatic transport mechanism 18 supplies the substrate container 96 belonging to the second grade to the loader unit 40 and the unloader unit 50.
  • the substrate container 96 containing a plurality of substrates 86a, 86b, 86c belonging to the second grade is supplied to the region 44a, and in the unloader unit 50, the empty substrate container 96 is disposed in the region. 54a.
  • the wafer 70 is transferred from the wafer loader unit 10 to the wafer holding unit 12.
  • the substrate container 94 is moved to the region 44d, and in the unloader unit 50, the substrate container 94 is moved to the region 54d.
  • the substrate 84 a is transported to the region 30 a of the transport lane 30, and the substrate 84 b is transported to the region 30 b of the transport lane 30.
  • each substrate 84a, 84b is provided with a plurality of die bonding regions (eight bonding regions for each substrate in FIG. 8).
  • the loader unit 40 moves the substrate container 96 through the region 46a to the region 46b of the second deck 46, while the unloader unit 50 moves the substrate container 96 through the region 56a to the region of the second deck 56. Move to 56b.
  • the plurality of dies 74 belonging to the first grade in the wafer 70 transferred from the wafer holding unit 12 by the second bonding head 20b are transferred to all the substrates 84a transferred to the region 30b. Bond to the die bonding area.
  • the substrate container 96 is moved to the region 46 c of the second deck 46 in the loader unit 40, and the substrate container 96 is moved to the region 56 c of the second deck 56 in the unloader unit 50.
  • the automatic transport mechanism 18 supplies the substrate container 94 belonging to the subsequent first grade to the loader unit 40 and the unloader unit 50.
  • the loader unit 40 supplies the subsequent substrate container 94 containing the plurality of substrates 84d, 84e, 84f belonging to the first grade to the region 44a, and the unloader unit 50 stores the empty subsequent substrate.
  • Body 94 is supplied to region 54a.
  • the bonding of the die 74 belonging to the first grade of the wafer 70 is continued. That is, the remaining plurality of dies 74 belonging to the first grade of the wafer 70 are bonded to a part of the die bonding region of the substrate 84b in the region 30a by the first bonding head 20a. In this way, all the dies 74 belonging to the first grade in the wafer 70 on the wafer holding unit 12 are bonded.
  • the transfer lane 30 includes the substrate 84a in which the die 74 is bonded to all of the plurality of die bonding regions and the substrate 84b in which room for bonding still remains in a part of the plurality of die bonding regions.
  • the substrate 84a which is a mounted substrate is sent from the region 30b to the unloader unit 50, while the substrate 84b which is a die-unmounted substrate is returned from the region 30a to the loader unit 40.
  • the loader unit 40 moves the subsequent substrate container 94 to the first deck region 44b
  • the unloader unit 50 moves the subsequent substrate container 94 to the first deck region 54b.
  • the substrate container 94 in the region 54 d of the unloader unit 50 accommodates the substrate 84 a (mounted substrate) in which the die 74 is bonded to all the die bonding regions, while the loader unit 40.
  • the substrate container 94 in the region 44d accommodates a substrate 84b (die unmounted substrate) in which a die 74 is bonded to a part of the die bonding region.
  • the subsequent substrate container 94 is moved to the area 44c of the first deck 44 in the loader unit 40, while the subsequent substrate container is moved in the unloader unit 50. 94 is moved to the area 54 c of the first deck 54.
  • the plurality of dies 74 belonging to the first grade in the first wafer 70 can be bonded to the substrates 84a and 84b, and the substrates 84a and 84b can be accommodated in the substrate container 94 of the loader unit 40 or the unloader unit 50. it can.
  • each substrate container 94 is moved to the regions 44 b and 44 c of the first deck 44, while in the unloader unit 50, each substrate container 94 is moved to the region of the first deck 54. Move to 54b, 54c. During this time, the loader unit 40 moves the substrate container 96 to the region 46d, and the unloader unit 50 moves the substrate container 96 to the region 56d.
  • the substrate container 96 is moved to the region 44d, and in the unloader unit 50, the substrate container 96 is moved to the region 54d. Then, in the loader unit 40, among the three substrates 86a to 86c accommodated in the substrate container 96, the substrate 86a is transported to the region 30b of the transport lane 30. As shown in FIG. 13, the substrate 86a is provided with a plurality of die bonding regions (eight die bonding regions in FIG. 13).
  • a plurality of dies 76 belonging to the second grade in the wafer 70 transferred from the wafer holding unit 12 by the second bonding head 20b are part of the substrate 86a transferred to the region 30b. Bond to the die bonding area. In this way, all the dies 76 belonging to the second grade in the wafer 70 on the wafer holding unit 12 are bonded.
  • the transfer lane 30 there is a substrate 86a in which room for bonding still remains in a part of the plurality of die bonding regions. Thereafter, the substrate 86a which is a die-unmounted substrate is returned from the region 30b to the loader unit 40.
  • the substrate housing 96 in the region 44d of the loader unit 40 accommodates a substrate 86a (die unmounted substrate) in which a die 76 is bonded to a part of the die bonding region.
  • the wafer 70 that has been bonded to the first-grade and second-grade dies 74 and 76 is moved from the wafer holding unit 12 to the wafer loader unit 10 as a processed wafer.
  • the plurality of dies 76 belonging to the second grade in the first wafer 70 can be bonded to the substrates 86 a and 86 b, and the substrates 86 a and 86 b can be accommodated in the substrate container 96 of the loader unit 40.
  • the substrate container 96 is moved to the region 46c of the second deck 46 through the region 46d.
  • the substrate container 96 is moved through the region 56d. Then, it is moved to the area 56 c of the second deck 56. During this time, the subsequent wafer 70 is transferred from the wafer loader unit 10 to the wafer holding unit 12.
  • each substrate container 94 is moved to the regions 44c and 44d, and in the unloader unit 50, each substrate container 94 is moved to the regions 54c and 54d.
  • the substrate 84c is transferred from the substrate container 94 in the region 54d to the region 30a in the transfer lane 30, and the substrate 84b is transferred to the region 30b in the transfer lane 30.
  • the die 74 is already bonded to a part of the die bonding region of the substrate 84b.
  • Each substrate 84c is provided with a plurality of die bonding regions (eight die bonding regions in FIG. 17).
  • a plurality of dies 74 belonging to the first grade in the subsequent wafer 70 transferred from the wafer holding unit 12 by the second bonding head 20b are transferred to the remaining one of the substrates 84b transferred to the region 30b. Bonding to the die bonding area of the part. Thereafter, as shown in FIG. 19, the bonding of the die 74 belonging to the first grade of the subsequent wafer 70 is continued.
  • the remaining plurality of dies 74 belonging to the first grade of the subsequent wafer 70 are bonded to all the die bonding regions of the substrate 84c in the region 30a by the first bonding head 20a. In this way, all the dies 74 belonging to the first grade in the subsequent wafer 70 on the wafer holding unit 12 are bonded.
  • the transfer lane 30 includes the substrates 84b and 84c in which the die 74 is bonded to all of the plurality of die bonding regions. Thereafter, the boards 84b and 84c, which are mounted boards, are sent from the transport lane 30 to the unloader unit 50.
  • the substrates 84b and 84c (mounted substrates) in which the dies 74 are bonded to all the die bonding regions are additionally accommodated in the substrate accommodating body 94 in the region 54d of the unloader section 50.
  • the substrate container 94 is filled with the substrates 84a to 84c, which are mounted substrates, and there is no other room for the substrate to be accommodated.
  • the plurality of dies 74 belonging to the first grade in the subsequent wafer 70 can be bonded to the substrates 84b and 84c, and the substrates 84b and 84c can be accommodated in the substrate container 94 of the unloader unit 50.
  • the empty substrate container 94 is moved to the region 42d.
  • the substrate container 94 filled with the substrates 84a to 84c, which are mounted substrates is moved. Move to region 52d.
  • the automatic transport mechanism 18 supplies the substrate container 94 belonging to the subsequent first grade to the loader unit 40 and the unloader unit 50.
  • the loader unit 40 supplies the subsequent substrate container 94 containing the plurality of substrates 84g, 84h, 84i belonging to the first grade to the region 44a, and the unloader unit 50 stores the empty subsequent substrate.
  • Body 94 is supplied to region 54a.
  • the subsequent substrate container 94 is moved to the first deck region 44b, while in the unloader unit 50, the subsequent substrate container 94 is moved to the first deck. Move to region 54b.
  • the empty substrate container 94 is moved to the region 42b via the region 42c on the discharge deck 42, while the unloader unit 50 is filled with the substrates 84a to 84c which are mounted substrates.
  • the substrate holder 94 thus moved is moved to the area 52 b via the area 52 c on the discharge deck 52.
  • the substrate transporters 94 disposed on the discharge decks 42 and 52 are discharged from the loader unit 40 and the unloader unit 50 by the automatic transport mechanism 18.
  • the substrates 84a to 84c which are mounted substrates on which all the dies 74 belonging to the first grade are bonded, can be unloaded from the unloader section 50.
  • the empty substrate container 94 can be recovered from the loader unit 40.
  • the substrate container 96 is moved to the region 44d via the region 46d.
  • the substrate container 96 is moved via the region 56d. Move to region 54d.
  • the loader unit 40 among the three substrates 86a to 86c accommodated in the substrate container 96, the substrate 86a is transported to the region 30b of the transport lane 30.
  • a die 76 is already bonded to a part of the die bonding region on the substrate 86a.
  • the plurality of dies 76 belonging to the second grade in the subsequent wafer 70 transferred from the wafer holding unit 12 by the second bonding head 20b are transferred to the region 86b of the substrate 86a. Bonding to the remaining part of the die bonding area.
  • the substrate 86 in the region 54d of the unloader section 50 accommodates the substrate 86a (mounted substrate) in which the die 76 is bonded to all the die bonding regions.
  • the subsequent wafer 70 after bonding all the first-grade and second-grade dies 74 and 76 is moved from the wafer holding unit 12 to the wafer loader unit 10 as a processed wafer.
  • the plurality of dies 76 belonging to the second grade in the subsequent wafer 70 can be bonded to the substrate 86a, and the substrate 86a can be accommodated in the substrate accommodating body 96 of the unloader section 50.
  • Example 2 A second embodiment will be described with reference to FIGS.
  • a plurality of substrates belonging to different grades are conveyed onto the conveyance lane 30, and the first and second bonding heads 20a and 20b bond dies belonging to different grades to the substrate.
  • the series of steps shown in FIGS. 6 to 18 are the same as those described in Example 1 above.
  • the substrate 84b in the region 30b of the transport lane 30 is a mounted substrate
  • the substrate 84c in the region 30a of the transport lane 30 is a die unmounted substrate
  • the remaining number of dies 74 to be bonded belonging to the first grade in the substrate 84c (8 in FIG. 18) is the remaining number of dies 76 belonging to the second grade in the wafer 70 (four in FIG. 18). It is preferable to perform the processing of the present embodiment under the condition that it exceeds.
  • the switching between the first embodiment and the second embodiment is performed by the bonding control unit 60 based on the mapping information.
  • the board 84c belonging to the first grade is set as the mounted board, while the board 86b belonging to the second grade which is a different grade is not changed. It can be a mounting substrate. Therefore, since the substrate 84c belonging to the first grade can be sent to the unloader unit 50 and at the same time the substrate 86b belonging to the second grade can be sent to the loader unit 40, a substrate belonging to a different grade can be retained in the transport lane 30. It can be evacuated quickly. Therefore, it is possible to bond the substrates belonging to different grades without reducing the processing efficiency.
  • Example 2 a series of steps of Example 2 will be described.
  • a substrate 84b in which a die 74 is bonded to all of a plurality of die bonding regions is sent to the unloader unit 50 as a mounted substrate.
  • the substrate 84c to which the die 74 belonging to the first grade is to be bonded is moved from the region 30a to the region 30b.
  • a substrate 84b (mounted substrate) in which the die 74 is bonded to all the die bonding regions is additionally accommodated.
  • the substrate container 94 accommodates the substrates 84a and 84b, which are mounted substrates.
  • the die 74 belonging to the first grade of the subsequent wafer 70 is bonded to the substrate 84c in the region 30b by the second bonding head 20b.
  • each substrate container 94 is moved to the regions 44b and 44c.
  • bonding of the die 74 belonging to the first grade of the wafer 70 is continued. That is, the plurality of dies 74 belonging to the first grade of the wafer 70 are bonded to the die bonding region of the substrate 84c in the region 30b by the second bonding head 20b. During this time, the substrate container 96 is moved to the region 44 d via the region 46 in the loader unit 40.
  • the plurality of dies 74 belonging to the first grade of the wafer 70 are subsequently bonded to the die bonding region of the substrate 84c in the region 30b by the second bonding head 20b.
  • the loader unit 40 conveys the substrate 86 b to the region 30 a of the conveyance lane 30.
  • the substrate 86b is provided with a plurality of die bonding regions (eight die bonding regions in FIG. 29).
  • the second bonding head 20b is subsequently bonded, and the plurality of dies 74 belonging to the first grade in the subsequent wafer 70 are all bonded to the substrate 84c transferred to the region 30b. Bond to the area.
  • a plurality of dies 76 belonging to the second grade of the subsequent wafer 70 are bonded to a part of the substrate 84b in the region 30a by the first bonding head 20a. Bond to the area. In this way, all the dies 74 and 76 belonging to the first and second grades of the subsequent wafer 70 on the wafer holding unit 12 are bonded.
  • the transfer lane 30 includes a substrate 84c (a mounted substrate belonging to the first grade) in which the die 74 is bonded to all of the plurality of die bonding regions, and room for bonding to a part of the plurality of die bonding regions. There remains a substrate 86b (die unmounted substrate belonging to the second grade). Thereafter, the substrate 84c which is a die-mounted substrate is sent from the region 30b to the unloader unit 50, while the substrate 86b which is a die-unmounted substrate is returned from the region 30a to the loader unit 40.
  • a substrate 84c a mounted substrate belonging to the first grade
  • the substrate 86b die unmounted substrate belonging to the second grade
  • the substrate container 94 in the region 54d of the unloader section 50 additionally stores a substrate 84c (mounted substrate) in which the die 74 is bonded to all the die bonding regions, while the loader
  • the substrate container 96 in the region 44d of the section 40 additionally accommodates a substrate 86b (die unmounted substrate) in which the die 76 is bonded to a part of the die bonding region.
  • the wafer 70 in which all the first-grade and second-grade dies 74 and 76 have been bonded is treated as a processed wafer from the wafer holding unit 12. It is moved to the wafer loader unit 10.
  • the substrate container 96 is moved to the region 46c of the second deck 46 via the region 46d. During this time, the subsequent wafer 70 is transferred from the wafer loader unit 10 to the wafer holding unit 12. Thereafter, as shown in FIG. 33, in the loader unit 40, each substrate container 94 is moved to the region 44d and the region 44c.
  • the arrangement of the substrate containers in the loader unit 40 and the unloader unit 50 can be made the same.
  • the embodiment has been described in which the die 72 is die-bonded to the substrate 80 so that the back surface of the die 72 faces the substrate 80.
  • the surface on which the integrated circuit pattern of the die is formed faces the substrate. Bonding may be performed in the direction to be performed. That is, the die may be face-down bonded to the substrate.
  • first and second bonding heads 20a and 20b are bonded.
  • one bonding head may be used, or three or more bonding heads may be applied. Also good.
  • the aspect in which the number of die grades of the wafer is two has been described, but it may be three or more, for example.
  • the substrate may be one that is cut into individual pieces after bonding a plurality of dies, or the region of the substrate where the plurality of dies are bonded is separated into individual members before bonding. It may be.
  • Embodiments described through the embodiments of the present invention can be used in appropriate combination according to the application, or can be used with modifications or improvements, and the present invention is not limited to the description of the above-described embodiments. Absent. It is apparent from the description of the scope of claims that the embodiments added with such combinations or changes or improvements can be included in the technical scope of the present invention.

Abstract

Pour au moins un substrat (80) qui est transporté d'un corps (90) de logement de substrats d'une partie (40) de chargement à une voie (30) de transport, une unité (60) de commande de soudure du présent dispositif (1) de soudure: (i) envoie le substrat (80) à un corps (90) de logement de substrats d'une partie (50) de déchargement en tant que substrat équipé de pastilles dans l'éventualité où la soudure de toutes les pastilles (72) au substrat (80) par une tête (20a, 20b) de soudure a été achevée, et (ii) renvoie le substrat (80) au corps (90) de logement de substrats de la partie (40) de chargement en tant que substrat à équiper de pastilles dans l'éventualité où la soudure de toutes les pastilles (72) au substrat (80) par la tête (20a, 20b) de soudure n'a pas été achevée. Cela permet de souder de manière efficiente des pastilles à un substrat par classe individuelle à l'aide d'un mécanisme simple.
PCT/JP2017/011518 2016-03-22 2017-03-22 Dispositif et procédé de soudure WO2017164252A1 (fr)

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JP2018507380A JP6589050B2 (ja) 2016-03-22 2017-03-22 ボンディング装置及びボンディング方法
KR1020187030094A KR102106884B1 (ko) 2016-03-22 2017-03-22 본딩 장치 및 본딩 방법
SG11201810369UA SG11201810369UA (en) 2016-03-22 2017-03-22 Bonding apparatus and bonding method
CN201780030478.0A CN109196628B (zh) 2016-03-22 2017-03-22 接合装置及接合方法

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KR102106884B1 (ko) 2020-05-06
KR20180124101A (ko) 2018-11-20
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TW201742179A (zh) 2017-12-01

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