WO2017161606A1 - 彩膜基板及其制作方法、液晶显示装置 - Google Patents

彩膜基板及其制作方法、液晶显示装置 Download PDF

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Publication number
WO2017161606A1
WO2017161606A1 PCT/CN2016/078797 CN2016078797W WO2017161606A1 WO 2017161606 A1 WO2017161606 A1 WO 2017161606A1 CN 2016078797 W CN2016078797 W CN 2016078797W WO 2017161606 A1 WO2017161606 A1 WO 2017161606A1
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Prior art keywords
layer
color filter
quantum dot
substrate
photoresist layer
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PCT/CN2016/078797
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English (en)
French (fr)
Inventor
王海军
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/031,742 priority Critical patent/US20180088408A1/en
Publication of WO2017161606A1 publication Critical patent/WO2017161606A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials

Definitions

  • the present invention relates to the field of flat panel display technology, and in particular to a color film substrate, a method for fabricating the same, and a liquid crystal display device.
  • the color filter film is an important component to convert the backlight into RGB (red, green and blue) three-color light.
  • the backlight is mostly white backlight, but the LED backlight is widely used at present. Although it has a high color gamut but low brightness, if you want to increase the brightness, you must increase the number of LEDs (light-emitting diodes), so that the energy consumption and cost will be greatly increased, so it is urgent to find other ways to improve the brightness of the backlight.
  • the present invention provides a color filter substrate, a method for fabricating the same, and a liquid crystal display device, which can significantly improve backlight brightness and improve overall color saturation and color gamut of the liquid crystal display panel.
  • a first aspect of the invention provides a method for fabricating a color filter substrate, comprising:
  • the quantum dots are mixed with the PFA material and coated on the substrate, wherein the quantum dots comprise R quantum dots, G quantum dots and B quantum dots;
  • the color filter layer comprises an R photoresist layer, a G photoresist layer and a B photoresist layer, an R photoresist layer, a G photoresist layer and a B photoresist layer Adjacently adjacent to the quantum dot/PFA layer.
  • the thickness of the R photoresist layer is the same as the thickness of the G photoresist layer, and the thickness of the B photoresist layer is 0.1-0.5 um thicker than the thickness of the R photoresist layer or the thickness of the G photoresist layer.
  • the manufacturing method further comprises:
  • a PI layer is formed on the ITO layer.
  • a second aspect of the invention provides a color filter substrate comprising:
  • the quantum dots include R quantum dots, G quantum dots, and B quantum dots
  • the color filter layer includes an R photoresist layer, a G photoresist layer, and a B photoresist layer, an R photoresist layer, a G photoresist layer, and a B photoresist layer.
  • the layers are sequentially formed adjacent to the quantum dot/PFA layer.
  • the thickness of the R photoresist layer is the same as the thickness of the G photoresist layer, and the thickness of the B photoresist layer is 0.1-0.5 um thicker than the thickness of the R photoresist layer or the thickness of the G photoresist layer.
  • the color film substrate further comprises:
  • a PI layer formed on the ITO layer is formed on the ITO layer.
  • a third aspect of the present invention provides a liquid crystal display device, comprising: a color filter substrate, an array substrate, a backlight module, and a liquid crystal disposed between the array substrate and the color filter substrate, wherein the color filter substrate comprises:
  • the quantum dots include R quantum dots, G quantum dots and B quantum dots
  • the color filter layer includes an R photoresist layer, a G photoresist layer and a B photoresist layer, and the R photoresist layer, the G photoresist layer and the B photoresist layer are in turn Adjacent to the quantum dot/PFA layer.
  • the thickness of the R photoresist layer is the same as the thickness of the G photoresist layer, and the thickness of the B photoresist layer is 0.1-0.5 um thicker than the thickness of the R photoresist layer or the thickness of the G photoresist layer.
  • the color film substrate further comprises:
  • the array substrate comprises:
  • the liquid crystal is disposed between the first PI layer and the second PI layer.
  • the beneficial effects of the present invention are: different from the prior art, the present invention forms a quantum dot/PFA layer on a color filter substrate of a liquid crystal display device, and forms a color on a quantum dot/PFA layer having a step structure.
  • the filter layer can significantly improve the backlight brightness of the liquid crystal display device, improve the overall color saturation and color gamut of the display panel, and reduce the power consumption of the liquid crystal display device.
  • FIG. 1 is a schematic flow chart of a method of fabricating a color filter substrate according to an embodiment of the invention
  • FIG. 2 is a schematic structural view of a color filter substrate prepared in FIG. 1;
  • FIG. 3 is a schematic structural view of a liquid crystal display device according to an embodiment of the present invention.
  • FIG. 1 is a schematic flow chart of a method for fabricating a color filter substrate according to an embodiment of the invention. As shown in FIG. 1, the manufacturing method of the color filter substrate 1 of this embodiment includes:
  • a substrate substrate 11 is provided.
  • the base substrate 11 includes, but is not limited to, a glass or quartz substrate.
  • S12 The quantum dots are mixed with the PFA material and coated on the base substrate 11.
  • quantum dots include R (red) quantum dots, G (green) quantum dots, and B (blue) quantum dots.
  • Quantum dot is a kind of nano-scale material, which has its own luminescent properties. It emits red, green and blue light under the excitation of light. The half-peak width of different light is smaller, the color purity is higher, and the brightness and purity of white light obtained after mixing are obtained. Compared with the traditional backlight, there is a large increase.
  • PFA is a perfluoroalkoxy vinyl ether copolymer.
  • the R quantum dot, the G quantum dot, and the B quantum dot are mixed with the PFA material in a certain ratio to obtain a quantum dot compound, and then the quantum dot compound is coated by spin coating or slit coating.
  • the particle diameter of the R quantum dot and the G quantum dot is about 1-10 nm, and the particle diameter of the B quantum dot is about 5 nm or less.
  • the quantum dot compound on the base substrate 11 it is necessary to form a black matrix (not shown) which is spaced apart on the base substrate 11, and a black matrix is used as the retaining wall, and a mask pair is used.
  • the process of exposing and developing the quantum dots and the PFA material forms a quantum dot/PFA layer 12 having a step structure, and the black matrix is removed by an etching process.
  • a color filter layer 13 is coated on the quantum dot/PFA layer 12.
  • a color filter layer 13 is coated on the quantum dot/PFA layer 12 having a step structure, wherein the color filter layer 13 includes an R (red) photoresist layer 131, G (green) photoresist layers 132, and B (blue)
  • the photoresist layer 133, the R photoresist layer 131, the G photoresist layer 132, and the B photoresist layer 133 are sequentially formed adjacent to the quantum dot/PFA layer 12, and the thickness of the R photoresist layer 131 and the G light
  • the thickness of the resist layer 132 is the same, and the thickness of the B photoresist layer 133 is 0.1-0.5 um thicker than the thickness of the R photoresist layer 131 and the thickness of the G photoresist layer 132, and correspondingly, the quantum corresponding to the R photoresist layer 131.
  • the dot/PFA layer 12 has the same thickness as the quantum dot/PFA layer 12 corresponding to the G photoresist layer 132, and the thickness ratio of the quantum dot/PFA layer 12 corresponding to the thickness of the B photoresist layer 133 corresponds to the R photoresist layer 131.
  • the quantum dot/PFA layer 12 or the quantum dot/PFA layer 12 corresponding to the G photoresist layer 132 has a thickness of 0.1-0.5 um.
  • the position of the quantum dot/PFA layer 12 and the position of the color filter layer 13 can be reversed, and the preparation method is unchanged.
  • a polarizing layer 14 is formed on the color filter layer 13.
  • a PI layer 16 is formed on the ITO layer 15.
  • the preparation method of the polarizing layer 14, the ITO layer 15, and the PI layer 16 is performed by a conventional preparation method, and details are not described herein again. Thus far, the production of the color filter substrate 1 of the present invention has been completed.
  • FIG. 2 is a schematic structural view of the color filter substrate prepared in FIG.
  • the color filter substrate 1 of the present embodiment includes a base substrate 11, a quantum dot/PFA layer 12 formed on the base substrate 11, and a color filter layer 13 formed on the quantum dot/PFA layer 12.
  • the polarizing layer 14 formed on the color filter layer 13, the ITO layer 15 formed on the polarizing layer 14, and the PI layer 16 formed on the ITO layer 15.
  • the quantum dot includes an R quantum dot, a G quantum dot, and a B quantum dot.
  • the quantum dot/PFA layer 12 is coated on the substrate by mixing the R quantum dot, the G quantum dot, and the B quantum dot with the PFA material, and The quantum dots and the PFA material are processed by a yellow light process in combination with an etching process to form a pattern.
  • the color filter layer 13 includes an R photoresist layer 131, a G photoresist layer 132, and a B photoresist layer 133.
  • the R photoresist layer 131, the G photoresist layer 132, and the B photoresist layer 133 are sequentially adjacent to each other to form a quantum dot/PFA. Above layer 12.
  • the brightness of the backlight can be significantly improved by the action of the quantum dot/PFA layer 12. Improve the overall color saturation and color gamut of the panel.
  • FIG. 3 is a schematic structural diagram of a liquid crystal display device according to an embodiment of the present invention.
  • the liquid crystal display device 3 includes a backlight module 33 , a color filter substrate 1 , an array substrate 2 , and a liquid crystal 31 sealed between the color filter substrate 1 and the array substrate 2 .
  • the color filter substrate 1 in the liquid crystal display device of the present embodiment is the color filter substrate 1 in the above embodiment, and includes a first base substrate 11 and a quantum dot/PFA layer 12 formed over the first base substrate 11. a color filter layer 13 formed on the quantum dot/PFA layer 12, a first polarizing layer 14 formed on the color filter layer 13, and a first ITO layer 15 formed over the first polarizing layer 14, formed in the first A first PI layer 16 on an ITO layer 15. It should be noted that the “first” here is for distinguishing from the array substrate described below for convenience of explanation.
  • the quantum dots in the quantum dot/PFA layer 12 in the color filter substrate 1 include R quantum dots, G quantum dots, and B quantum dots, and the quantum dot/PFA layer 12 is an R quantum dot, a G quantum dot, and a B quantum dot.
  • the PFA material is mixed and formed on the base substrate by a yellow light process in combination with an etching process, which has a step structure.
  • the color filter layer 13 includes an R photoresist layer 131, a G photoresist layer 132, and a B photoresist layer 133.
  • the thickness of the R photoresist layer 131 is the same as the thickness of the G photoresist layer 132, and the thickness ratio of the B photoresist layer 133.
  • the thickness of the R photoresist layer 131 is 0.1-0.5 um thicker than the thickness of the G photoresist layer 132, and the R photoresist layer 131, the G photoresist layer 132, and the B photoresist layer 133 are sequentially disposed adjacent to the quantum dot/PFA. Above layer 12.
  • the backlight module 33 is disposed on a side of the color filter substrate 1 facing away from the array substrate 2.
  • the array substrate 2 includes a second substrate 21, a second polarizing layer 22 formed on the second substrate 21, and a second ITO layer 23 formed on a side of the second substrate 21 away from the second polarizing layer 22, A second PI layer 24 is formed under the second ITO layer 23.
  • the second polarizing layer 22 is generally a polarizing plate disposed on a side of the array substrate 2 facing away from the color filter substrate 1 .
  • the first polarizing layer 14 is generally provided in a built-in type and disposed on a side of the color filter substrate 1 facing the array substrate 2 .
  • the first polarizing layer 14 is a polarizing layer of a dye series.
  • the second polarizing layer 22 is in a built-in or external manner.
  • the second polarizing layer 22 is disposed in an external manner, and the second polarizing layer 22 is disposed on a side of the array substrate 2 away from the color filter substrate 1 and second.
  • the polarizing layer 22 is perpendicular to the polarization mode of the first polarizing layer 14.
  • the second ITO layer 23 is disposed on a side of the array substrate 2 facing the color filter substrate 1 , and the liquid crystal 31 is disposed between the second PI layer 24 and the first PI layer 16 .
  • a photo spacer 32 is disposed between the array substrate 2 and the color filter substrate 1. The photo spacer 32 is disposed in the liquid crystal 31 layer for supporting and maintaining the box between the array substrate 2 and the color filter substrate 1. distance.
  • the present invention when the backlight source is a blue light source, the R quantum dots and the G quantum dots in the quantum dot/PFA layer 12 emit half width and width under the excitation of the blue backlight. Narrow red and green mixed light, and superimposed with blue backlight to emit white light. If the backlight is white light, any quantum quantum or quantum quantum dot or B quantum dot in quantum dot/PFA layer 12 The white light is emitted after the dots are superimposed with the white light. Therefore, by providing the quantum dot/PFA layer 12 on the color filter substrate, the present invention can significantly improve the backlight brightness, reduce the power consumption, save the cost, and improve the color saturation of the liquid crystal display panel as a whole. Degree and color gamut.
  • the color filter substrate 1 is prepared by the method of the above embodiment, and then the conventional array substrate 2 is processed into a box process, and then the liquid crystal 31 is injected into the case.
  • the liquid crystal display device 3 having the quantum dot/PFA layer 12 of the present invention can be obtained.
  • the liquid crystal display device of the present invention can provide backlight brightness and reduce the performance of the display panel by providing a quantum dot/PFA layer on the color filter substrate and utilizing the characteristics of the quantum dot/PFA layer. It consumes less cost and improves the overall color saturation and color gamut of the panel.

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  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Optical Filters (AREA)
  • Polarising Elements (AREA)

Abstract

一种彩膜基板(1)及其制作方法，以及包括彩膜基板(1)的液晶显示装置(3)，其中彩膜基板(1)包括量子点/PFA层(12)及彩色滤光层(13)，其制作方法包括：将量子点与PFA材料混合后涂覆在衬底基板(11)上，利用掩膜对量子点与PFA材料进行曝光、显影后形成具有段差结构的量子点/PFA层(12)，并在量子点/PFA层(12)上涂覆彩色滤光层(13)。通过在彩膜基板(1)上设置一层量子点/PFA层(12)，能够提高液晶显示装置(3)的背光亮度，提高面板的整体色彩饱和度和色域。

Description

彩膜基板及其制作方法、液晶显示装置
【技术领域】
本发明涉及平板显示技术领域，特别是涉及彩膜基板及其制作方法、液晶显示装置。
【背景技术】
TFT-LCD（薄膜晶体管）结构中，彩色滤膜作为重要组成部分，起到将背光转换为RGB（红绿蓝）三色光的作用，目前背光较多数为白色背光，但目前应用广泛的LED背光虽然具有高色域但亮度较低，若想提高亮度，必须增加LED（发光二极管）数目，这样耗能与成本均会较大幅度提高，因此急需寻找其他方法提高背光源的亮度。
【发明内容】
有鉴于此，本发明提供一种彩膜基板及其制作方法、液晶显示装置，能够显著提高背光亮度，提高液晶显示面板整体色彩饱和度及色域。
本发明的第一方面提供一种彩膜基板的制作方法，包括：
提供一衬底基板；
将量子点与PFA材料混合后涂覆在衬底基板上，其中，量子点包括R量子点、G量子点及B量子点；
采用掩膜对量子点与PFA材料进行曝光、显影后形成具有段差结构的量子点/PFA层；
在量子点/PFA层上涂覆彩色滤光层，其中，彩色滤光层包括R光阻层、G光阻层及B光阻层，R光阻层、G光阻层及B光阻层依次相邻形成于量子点/PFA层上方。
其中，R光阻层的厚度与G光阻层的厚度相同，B光阻层的厚度比R光阻层的厚度或G光阻层的厚度厚0.1-0.5um。
其中，在量子点/PFA层上涂覆彩色滤光层的步骤之后，制作方法还包括：
在彩色滤光层上形成偏光层；
在偏光层上形成ITO层；
在ITO层上形成PI层。
本发明的第二方面提供一种彩膜基板，包括：
衬底基板；
形成在衬底基板上的量子点/PFA层；
形成在量子点/PFA层上的彩色滤光层；
其中，量子点包括R量子点、G量子点及B量子点，彩色滤光层包括R光阻层、G光阻层及B光阻层，R光阻层、G光阻层及B光阻层依次相邻形成于量子点/PFA层上方。
其中，R光阻层的厚度与G光阻层的厚度相同，B光阻层的厚度比R光阻层的厚度或G光阻层的厚度厚0.1-0.5um。
其中，彩膜基板还包括：
形成在彩色滤光层上的偏光层；
形成在偏光层上的ITO层；
形成在ITO层上的PI层。
本发明的第三方面提供一种液晶显示装置，包括彩膜基板、阵列基板、背光模组及设置于阵列基板与彩膜基板之间的液晶，其中，彩膜基板包括：
第一衬底基板；
形成在第一衬底基板上的量子点/PFA层；
形成在量子点/PFA层上的彩色滤光层；
量子点包括R量子点、G量子点及B量子点，彩色滤光层包括R光阻层、G光阻层及B光阻层，R光阻层、G光阻层及B光阻层依次相邻形成于量子点/PFA层上方。
其中，R光阻层的厚度与G光阻层的厚度相同，B光阻层的厚度比R光阻层的厚度或G光阻层的厚度厚0.1-0.5um。
其中，彩膜基板还包括：
形成在彩色滤光层上的第一偏光层；
形成在第一偏光层上的第一ITO层；
形成在第一ITO层上的第一PI层。
其中，阵列基板包括：
第二衬底基板；
形成在第二衬底基板上的第二偏光层；
形成在第二衬底基板远离第二偏光层一侧的第二ITO层；
形成在第二ITO层下的第二PI层；
液晶设置于第一PI层与第二PI层之间。
通过上述方案，本发明的有益效果是：区别于现有技术，本发明通过在液晶显示装置的彩膜基板上形成量子点/PFA层，并在具有段差结构的量子点/PFA层上形成彩色滤光层，从而可以显著提高液晶显示装置的背光亮度，并提高显示面板的整体色彩饱和度及色域，还可以降低液晶显示装置的功耗。
【附图说明】
图1是本发明一实施例的彩膜基板的制作方法的流程示意图；
图2是图1中制得的彩膜基板的结构示意图；
图3是本发明一实施例的液晶显示装置的结构示意图。
【具体实施方式】
为了使本发明所要解决的技术问题、技术方案及有益效果更加清楚、明白，以下结合附图和实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
请参看图1，图1是本发明一实施例的彩膜基板的制作方法流程示意图。如图1所示，本实施例的彩膜基板1的制作方法包括：
S11：提供一衬底基板11。
该衬底基板11包括但不限于为玻璃或石英基板。
S12：将量子点与PFA材料混合后涂覆在衬底基板11上。
其中，量子点包括R（红色）量子点、G（绿色）量子点及B（蓝色）量子点。量子点是一种纳米级材料，其自身具有发光特性，在光的激发下会发出红绿蓝三色光，不同光的半高峰宽较小，色彩纯度较高，混合后得到的白光亮度与纯度相比较传统的背光而言有较大幅度提高。而PFA是一种全氟烷氧基乙烯基醚共聚物。在本实施例中，将R量子点、G量子点及B量子点与PFA材料按一定比例混合后获得量子点化合物，然后采用旋涂或狭缝式涂布的方式将量子点化合物涂布在衬底基板上11。通常，R量子点与G量子点的粒径约为1-10nm，B量子点的粒径约为5nm以下。
S13：采用掩膜对量子点与PFA材料进行曝光、显影后获得具有段差结构的量子点/PFA层12。
其中，在将量子点化合物涂覆在衬底基板11上的步骤之前，需要先在衬底基板11上形成间隔设置的黑色矩阵（未图示），利用黑色矩阵作为挡墙，采用掩膜对量子点与PFA材料进行曝光、显影的制程，形成具有段差结构的量子点/PFA层12，并且通过蚀刻工艺将黑色矩阵去除。
S14：在量子点/PFA层12上涂覆彩色滤光层13。
在具有段差结构的量子点/PFA层12上涂覆彩色滤光层13，其中，彩色滤光层13包括R（红色）光阻层131、G（绿色）光阻层132及B（蓝色）光阻层133，R光阻层131、G光阻层132及B光阻层133依次相邻形成于量子点/PFA层12上方，并且，R光阻层131的厚度与所述G光阻层132的厚度相同，B光阻层133的厚度比R光阻层131的厚度和比G光阻层132的厚度均厚0.1-0.5um，相应的，对应于R光阻层131的量子点/PFA层12与对应于G光阻层132的量子点/PFA层12的厚度相同，对应于B光阻层133的厚度的量子点/PFA层12的厚度比对应于R光阻层131的量子点/PFA层12或对应于G光阻层132的量子点/PFA层12的厚度薄0.1-0.5um。
在其他实施例中，量子点/PFA层12的位置与彩色滤光层13的位置可对调，其制备方法不变。
S15：在彩色滤光层13上形成偏光层14。
S16：在偏光层14上形成ITO层15。
S17：在ITO层15上形成PI层16。
其中，偏光层14、ITO层15及PI层16的制备采用现有的制备方法，在此不再赘述。至此，完成了本发明的彩膜基板1的制作。
请进一步参看图2，图2是图1中制得的彩膜基板的结构示意图。如图2所示，本实施例的彩膜基板1包括衬底基板11、形成在衬底基板11上的量子点/PFA层12，形成在量子点/PFA层12上的彩色滤光层13，形成在彩色滤光层13上的偏光层14，形成在偏光层14上的ITO层15，形成在ITO层15上的PI层16。其中，量子点包括R量子点、G量子点及B量子点，量子点/PFA层12通过将R量子点、G量子点及B量子点与PFA材料混合后涂覆在衬底基板上方，并通过黄光制程结合蚀刻制程对量子点与PFA材料进行图案经处理后形成。彩色滤光层13包括R光阻层131、G光阻层132及B光阻层133，R光阻层131、G光阻层132及B光阻层133依次相邻形成于量子点/PFA层12上方。因此，本实施例通过在彩膜基板1的衬底基板11与彩色滤光层13之间设置一层量子点/PFA层12，通过量子点/PFA层12的作用，可以显著提高背光的亮度，提高面板的整体色彩饱和度及色域。
本发明还公开一种液晶显示装置，其中液晶显示装置包括上述彩膜基板1及背光模组33和阵列基板2。请进一步参看图3，图3是本发明一实施例的液晶显示装置的结构示意图。如图3所示，液晶显示装置3包括背光模组33、彩膜基板1、阵列基板2及密封设置于彩膜基板1及阵列基板2之间的液晶31。
本实施例中的液晶显示装置中的彩膜基板1为上述实施例中的彩膜基板1，其包括第一衬底基板11、形成在第一衬底基板11上方的量子点/PFA层12，形成在量子点/PFA层12上的彩色滤光层13，形成在彩色滤光层13上的第一偏光层14，形成在第一偏光层14上方的第一ITO层15，形成在第一ITO层15上的第一PI层16。需要说明的是，这里的“第一”是为了和下述的阵列基板中区分，以方便说明。
其中，彩膜基板1中的量子点/PFA层12中的量子点包括R量子点、G量子点及B量子点，量子点/PFA层12为R量子点、G量子点及B量子点与PFA材料混合后通过黄光制程结合蚀刻制程在衬底基板上形成，其具有段差结构。彩色滤光层13包括R光阻层131、G光阻层132及B光阻层133，R光阻层131的厚度与G光阻层132的厚度相同，而B光阻层133的厚度比R光阻层131的厚度和比G光阻层132的厚度均厚0.1-0.5um，且R光阻层131、G光阻层132及B光阻层133依次相邻设置于量子点/PFA层12上方。
背光模组33设置于彩膜基板1背向阵列基板2的一侧。
阵列基板2包括第二衬底基板21，形成在第二衬底基板21上的第二偏光层22，形成在第二衬底基板21远离第二偏光层22一侧的第二ITO层23，形成在第二ITO层23下的第二PI层24。其中，第二偏光层22通常为偏光板，其设置于阵列基板2背向彩膜基板1的一侧。
其中，第一偏光层14通常采用内置式，设置于彩膜基板1面向阵列基板2的一侧。优选的，第一偏光层14采用染料系列的偏光层。第二偏光层22采用内置或外置的方式，本实施例中第二偏光层22采用外置的方式，第二偏光层22设置于阵列基板2远离彩膜基板1的一侧，且第二偏光层22与第一偏光层14的偏振方式垂直。第二ITO层23设置于阵列基板2面向彩膜基板1的一侧，液晶31设置于第二PI层24与第一PI层16之间。此外，阵列基板2及彩膜基板1之间还设置有感光间隙子32，感光间隙子32设置于液晶31层中，用于支撑与维护阵列基板2与彩膜基板1两者间的成盒距离。
综上，本实施例的液晶显示装置，当背光源为蓝色光源时，在蓝色背光的激发下，量子点/PFA层12中的R量子点及G量子点的会发出半高宽很窄的红、绿混合光，并叠加蓝色背光混合后发出白光，如果背光源为白光时，量子点/PFA层12中的R量子点或G量子点或B量子点中的任何一种量子点与白光叠加后发出白光，因此，本发明通过在彩膜基板上设置量子点/PFA层12，可以显著提高背光亮度，并且降低能耗，节省成本，并且可以提高液晶显示面板整体的色彩饱和度及色域。
其中，本实施例的液晶31显示装置在制作上，通过采用上述实施例的方法制备得彩膜基板1，进而与传统的阵列基板2进行成盒制程，然后通过向盒中注入液晶31，便可制得本发明的具有量子点/PFA层12的液晶显示装置3。
综上所述，区别于现有技术，本发明的液晶显示装置，通过在彩膜基板上设置量子点/PFA层，利用量子点/PFA层的特性，可以提背光亮度，降低显示面板的能耗及降低成本，并且能够提高提高面板的整体色彩饱和度和色域。
以上参照附图说明了本发明的优选实施例，并非因此局限本发明的权利范围。本领域技术人员不脱离本发明的范围和实质内所作的任何修改、等同替换和改进，均应在本发明的权利范围之内。

Claims (10)

  1. 一种彩膜基板的制作方法，其中，所述制作方法包括：
    提供一衬底基板；
    将量子点与PFA材料混合后涂覆在所述衬底基板上，其中，所述量子点包括R量子点、G量子点及B量子点；
    采用掩膜对所述量子点与PFA材料进行曝光、显影后形成具有段差结构的量子点/PFA层；
    在所述量子点/PFA层上涂覆彩色滤光层，其中，所述彩色滤光层包括R光阻层、G光阻层及B光阻层，所述R光阻层、G光阻层及B光阻层依次相邻形成于所述量子点/PFA层上方。
  2. 根据权利要求1所述的制作方法，其中，所述R光阻层的厚度与所述G光阻层的厚度相同，所述B光阻层的厚度比所述R光阻层的厚度或所述G光阻层的厚度厚0.1-0.5um。
  3. 根据权利要求1所述的制作方法，其中，在所述量子点/PFA层上涂覆彩色滤光层的步骤之后，所述制作方法还包括：
    在所述彩色滤光层上形成偏光层；
    在所述偏光层上形成ITO层；
    在所述ITO层上形成PI层。
  4. 一种彩膜基板，其中，所述彩膜基板包括：
    衬底基板；
    形成在所述衬底基板上的量子点/PFA层；
    形成在所述量子点/PFA层上的彩色滤光层；
    其中，所述量子点包括R量子点、G量子点及B量子点，所述彩色滤光层包括R光阻层、G光阻层及B光阻层，所述R光阻层、G光阻层及B光阻层依次相邻形成于所述量子点/PFA层上方。
  5. 根据权利要求4所述的彩膜基板，其中，所述R光阻层的厚度与所述G光阻层的厚度相同，所述B光阻层的厚度比所述R光阻层的厚度或所述G光阻层的厚度厚0.1-0.5um。
  6. 根据权利要求4所述的彩膜基板，其中，所述彩膜基板还包括：
    形成在所述彩色滤光层上的偏光层；
    形成在所述偏光层上的ITO层；
    形成在所述ITO层上的PI层。
  7. 一种液晶显示装置，其中，所液晶显示装置包括彩膜基板、阵列基板、背光模组及设置于所述阵列基板与所述彩膜基板之间的液晶，其中，所述彩膜基板包括：
    第一衬底基板；
    形成在所述第一衬底基板上的量子点/PFA层；
    形成在所述量子点/PFA层上的彩色滤光层；
    所述量子点包括R量子点、G量子点及B量子点，所述彩色滤光层包括R光阻层、G光阻层及B光阻层，所述R光阻层、G光阻层及B光阻层依次相邻形成于所述量子点/PFA层上方。
  8. 根据权利要求7所述的液晶显示装置，其中，所述R光阻层的厚度与所述G光阻层的厚度相同，所述B光阻层的厚度比所述R光阻层的厚度或所述G光阻层的厚度厚0.1-0.5um。
  9. 根据权利要求7所述的液晶显示装置，其中，所述彩膜基板还包括：
    形成在所述彩色滤光层上的第一偏光层；
    形成在所述第一偏光层上的第一ITO层；
    形成在所述第一ITO层上的第一PI层。
  10. 根据权利要求9所述的液晶显示装置，其中，所述阵列基板包括：
    第二衬底基板；
    形成在所述第二衬底基板上的第二偏光层；
    形成在所述第二衬底基板远离所述第二偏光层一侧的第二ITO层；
    形成在所述第二ITO层下的第二PI层；
    所述液晶设置于所述第一PI层与所述第二PI层之间。
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