WO2017148208A1 - 表面波等离子体设备 - Google Patents

表面波等离子体设备 Download PDF

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Publication number
WO2017148208A1
WO2017148208A1 PCT/CN2016/112597 CN2016112597W WO2017148208A1 WO 2017148208 A1 WO2017148208 A1 WO 2017148208A1 CN 2016112597 W CN2016112597 W CN 2016112597W WO 2017148208 A1 WO2017148208 A1 WO 2017148208A1
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WIPO (PCT)
Prior art keywords
resonant cavity
dielectric
surface wave
dielectric member
wave plasma
Prior art date
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Ceased
Application number
PCT/CN2016/112597
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English (en)
French (fr)
Inventor
昌锡江
区琼荣
韦刚
黄亚辉
柏锦枝
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Beijing NMC Co Ltd
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Beijing NMC Co Ltd
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Priority to SG11201807555UA priority Critical patent/SG11201807555UA/en
Priority to JP2018546492A priority patent/JP6718972B2/ja
Priority to KR1020187028111A priority patent/KR102097436B1/ko
Publication of WO2017148208A1 publication Critical patent/WO2017148208A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4615—Microwave discharges using surface waves

Definitions

  • the present invention relates to the field of semiconductor device manufacturing technology, and in particular to a surface wave plasma device.
  • Plasma devices are irreplaceable in the manufacturing process of integrated circuits or MEMS (Micro-Electro-Mechanical System) devices. Therefore, the development of high-performance plasma generating devices is crucial for the development of semiconductor manufacturing processes.
  • MEMS Micro-Electro-Mechanical System
  • the plasma device is used in a semiconductor manufacturing process, the most important factor to be investigated is that a large area of uniform plasma can be efficiently generated within a certain pressure range. Specific to the details of the process, the focus is often on the process gas, gas pressure, plasma uniformity, and the controllability of the particle composition within the plasma, ie, the plasma. For this reason, for a plasma source, a plasma source capable of exciting a large-area, high-density, uniform plasma at a low pressure is currently the main research direction.
  • CCP capacitive coupled plasma
  • ICP inductively coupled plasma
  • SWP surface wave
  • ECR Resonant plasma
  • Surface wave plasma is a new type of plasma generation technology developed in recent years. Compared with inductively coupled plasma, its structure is simpler and has advantages that can not be ignored in obtaining large-area and uniform plasma. Due to the mechanism of surface wave heating, the microwave energy is confined to the boundary between the plasma and the medium.
  • the plasma actually used is a remote plasma without the influence of the excitation source, so compared to the capacitively coupled plasma and the inductively coupled plasma, Its electronics
  • the lower temperature reduces the plasma damage to the device surface caused by high energy electrons.
  • Surface wave means that a microwave is excited near the surface of the medium to a plasma higher than the critical density of the surface wave, and the microwave rapidly decays along the normal direction in the plasma region of the medium, and forms a surface along the medium and the plasma. wave.
  • the surface wave can form a periodic strong electric field within the range of its transmission, thereby maintaining a high-density plasma, which is the principle of surface wave plasma formation.
  • the surface wave plasma device comprises: a microwave source and a microwave transmission matching structure, a surface wave antenna structure and a chamber.
  • the microwave source and the microwave transmission matching structure include: a microwave source.
  • the surface wave antenna structure includes an antenna main body 11, a retardation plate 12, a slit plate 15, and a dielectric plate 16 which are laminated in this order from top to bottom.
  • the antenna body 11 has a cylindrical shape and is usually made of a metal material such as aluminum or stainless steel.
  • the slot plate 15 is an antenna plate, which is mostly made of a metal material such as aluminum or stainless steel, and has a disk shape, and has a plurality of slit structures uniformly distributed from the inside to the outside, and each of the slit structures includes a plurality of slit structures.
  • the slits of the T-shaped structure and the slits of these T-shaped structures are evenly distributed in the circumferential direction.
  • the retardation plate 12 has a disk shape and is a low loss dielectric plate.
  • the medium may be Al2O3, SiO2 or SiN (silicon nitride compound).
  • Circularly polarized waves are generated on the 15 and circularly polarized waves are excited by the dielectric plate 16 in the vacuum chamber 19 to generate plasma.
  • the dielectric plate 16 is typically quartz.
  • the chamber includes a cavity 18, a seal ring 17 for sealing the cavity 18 and the antenna body 11, and a support table 21 for placing the wafer 20.
  • the surface wave antenna structure in the daughter device realizes microwave feeding by using a slit slotted antenna method, which is equivalent to a plasma source, and the microwave is fed in a coaxial manner when feeding, that is, from The central portion of the microwave self-latticulating plate 12 of the rectangular waveguide 8 enters the retardation plate 12, and is radiated in a radial direction in the retardation plate 12, and is gradually attenuated in the radial direction during transmission, resulting in the distribution of energy in the radial direction.
  • the area size of the portion of the plasma (hereinafter simply referred to as a uniform plasma) in which the distribution density in the generated plasma is uniform. Therefore, the area of the uniform plasma that can be generated by the surface-wave plasma device using the slot-slotted antenna in the microwave feeding mode can only be applied to the 8-inch-diameter wafer at the maximum, and it is impossible to achieve a larger size of 12 inches or the like. Industrial grade wafers of diameter are processed.
  • the present invention provides a surface wave plasma apparatus.
  • the present invention provides a surface wave plasma apparatus including a microwave generating device, a microwave transmission matching structure, and a vacuum chamber, which are sequentially connected, wherein the microwave transmission matching structure includes a rectangular waveguide for a transmission station.
  • the microwave generated by the microwave generating device is a microwave generating device, a microwave transmission matching structure, and a vacuum chamber, which are sequentially connected, wherein the microwave transmission matching structure includes a rectangular waveguide for a transmission station. The microwave generated by the microwave generating device.
  • the surface wave plasma device further includes a resonant cavity disposed between the rectangular waveguide and the vacuum chamber, and is in closed communication with the rectangular waveguide and sealingly connected to the vacuum chamber, and
  • the bottom wall of the resonant cavity is provided with a plurality of dielectric windows, the orthographic projection of the plurality of dielectric windows in the plane of the bottom surface of the vacuum chamber falling into the inner wall of the vacuum chamber is defined by the orthographic projection of the plane Within the scope to couple microwave energy into the vacuum chamber, respectively.
  • the terminal of the rectangular waveguide is in closed communication with the resonant cavity.
  • the middle section of the rectangular waveguide is in closed communication with the resonant cavity.
  • the plurality of dielectric windows are evenly distributed along the circumferential direction of the vacuum chamber.
  • the plurality of dielectric windows are arranged in such a manner as to be in the resonant cavity
  • a plurality of dielectric member setting holes are defined in the bottom wall, and a dielectric member having a shape matching therein is embedded in each of the dielectric member setting holes.
  • each of the dielectric members is one of the following shapes: a cylinder, a frustum, a combination of a plurality of cylinders, a combination of a plurality of frustums, a combination of a cylinder and a frustum.
  • the shape of the dielectric member when the shape of the dielectric member is a combination of a plurality of cylinders, the plurality of cylinders are coaxial with each other and stacked step by step, and the diameter of the lower-stage cylinder is not greater than the diameter of the upper-stage cylinder; Or when the shape of the dielectric member is a combination of a plurality of frustums, the plurality of frustums are coaxially and stacked one on another, and the diameter of the top surface of the lower frustum is not greater than that of the upper frustum The diameter of the bottom surface; or the shape of the dielectric member is a combination of a cylinder and a frustum, the cylinder and the frustum are coaxial with each other and stacked step by step, and the top surface of the lower stage cylinder/frustum The diameter is not greater than the diameter of the bottom surface of the upper cylinder/frustum.
  • the plurality of dielectric windows are arranged in such a manner that a plurality of dielectric member setting holes are formed in a bottom wall of the resonant cavity, between the bottom wall of the resonant cavity and the vacuum chamber
  • the dielectric member is disposed in a plate-like structure and capable of covering the plurality of dielectric member-providing holes; or a plurality of dielectric member-providing holes are formed in a bottom wall of the resonant cavity at the resonance
  • a dielectric member is disposed between the bottom wall of the cavity and the vacuum chamber, the dielectric member including a mounting plate and a plurality of dielectric blocks embedded in the mounting plate, each of the dielectric blocks being mounted along the mounting The thickness direction of the plate penetrates through the mounting plate, and the number and arrangement positions of the plurality of dielectric blocks are in one-to-one correspondence with the number and positions of the plurality of dielectric member setting holes.
  • the thickness of the dielectric member ranges from 5 to 80 mm.
  • the minimum diameter of the dielectric member ranges from 40 mm to 120 mm.
  • the surface wave plasma apparatus further includes a first probe disposed in a middle section of the rectangular waveguide and having one end extending into the resonant cavity for introducing microwaves in the rectangular waveguide Within the resonant cavity.
  • the other end of the first probe extends to the outside of the rectangular waveguide in a direction away from the resonant cavity.
  • the first probe is fixed by screwing or snapping or pinning.
  • the surface wave plasma device further comprises a connection cavity disposed between the microwave outlet of the rectangular waveguide and the microwave inlet of the resonant cavity, and is sealingly connected with the two, one end of the first probe Through the connecting cavity and extending into the resonant cavity.
  • the surface wave plasma device further comprises a short-circuiting piston disposed in a rear region of the rectangular waveguide and movable relative to the axis of the rectangular waveguide to adjust an effective path of the rectangular waveguide length.
  • the surface wave plasma device further includes a second probe extending along an axial direction of the resonant cavity, the upper end of which is fixed on the top wall of the resonant cavity or extends through the top wall of the resonant cavity to the Above the resonant cavity, the lower end is located inside the resonant cavity.
  • the second probe is arranged to be movable up and down relative to the bottom wall of the resonant cavity along the axial direction of the resonant cavity.
  • the setting position of the second probe corresponds to the medium window.
  • the number and position of the second probes correspond to the number and position of the dielectric window, and the orthographic projection of the second probe on the dielectric window corresponding thereto is coaxial with the dielectric window .
  • the distance between the edge of the orthographic projection of the second probe on the media window corresponding thereto and the edge of the dielectric window is not less than 2 cm.
  • a projection of the plurality of second probes on a bottom surface of the vacuum chamber is distributed at a center and a radius of a center of a bottom surface of the vacuum chamber a circumference of a plurality of different concentric circles; or in the case where the plurality of second probes are plural, a projection of the plurality of second probes on a bottom surface of the vacuum chamber is distributed in the vacuum chamber The center of the bottom surface of the chamber is on one circumference of the center of the circle.
  • the resonant cavity further comprises a lifting mechanism, the number of the lifting mechanism corresponding to the number of the circumferences, each of the lifting mechanisms for correspondingly driving all the second probes on the same circumference to rise synchronously Or synchronously descending; or the number of lifting mechanisms and said The number of second probes corresponds to each of the lifting mechanisms corresponding to one of the second probes and is used to drive the second probe to rise or fall.
  • each of the second probes is provided with an external thread, and a thread matching the external thread is provided at a position on the top wall of the resonant cavity where the second probe is disposed a hole, the threaded hole is a through hole or a blind hole, and the second probe is installed in the threaded hole in one-to-one correspondence, and the second probe is realized by rotating the second probe clockwise or counterclockwise The lifting of the needle relative to the bottom wall of the resonant cavity.
  • a vertical spacing between a lower end of the second probe and a bottom wall of the resonant cavity is not less than 10 mm.
  • the height of the resonant cavity is 10 mm to 200 mm.
  • the surface wave plasma device provided by the present invention is provided with a resonant cavity between the microwave transmission matching structure and the vacuum chamber, and a plurality of dielectric windows are arranged on the bottom wall of the resonant cavity, so that the microwave is in the resonant cavity
  • the electric field of the standing wave formed can be coupled into the vacuum chamber through a plurality of dielectric windows. Since each dielectric window can be equivalent to a plasma source, the surface wave plasma device provided by the present invention is equivalent to having multiple plasmas. The source simultaneously excites the plasma, thereby obtaining a large area of uniform plasma in the vacuum chamber, thereby meeting the needs of large-sized wafer processing.
  • 1a is a schematic structural view of a conventional surface wave plasma device
  • 1b is a schematic structural view of a conventional surface wave antenna slot plate
  • FIG. 2 is a schematic structural view of a surface wave plasma device according to a first embodiment of the present invention
  • Figure 3 is a plan view of the bottom wall of the resonant cavity
  • Figure 4 is a cross-sectional view showing the bottom wall of the resonant cavity taken along A-A' in Figure 3;
  • Figure 5 is a cross-sectional view showing the dielectric member and the dielectric member providing hole in a separated state
  • Figure 6A is a schematic view of a dielectric member of a two-column combined structure
  • 6B is a schematic view of a dielectric member of a two-stage frustum structure
  • 6C is a schematic view of another dielectric member of a two-stage frustum structure
  • 6D is a schematic view of a dielectric member of a combined structure of a cylinder and a frustum
  • 6E is a schematic view of another dielectric member of a combined structure of a cylinder and a frustum
  • 6F is a schematic view of another dielectric member of a combined structure of a cylinder and a frustum;
  • 6G is a schematic view of another dielectric member of a combined structure of a cylinder and a frustum
  • FIG. 7 is a schematic structural diagram of a surface wave plasma device according to a second embodiment of the present invention.
  • FIG. 8A is a top cross-sectional view of a first resonant mechanism employed in a second embodiment of the present invention.
  • FIG. 8B is a front cross-sectional view showing the first type of adjustment mechanism adopted by the first embodiment of the second embodiment of the present invention.
  • 8C is a front cross-sectional view showing a first type of adjustment mechanism adopted by the second embodiment of the present invention.
  • Figure 8D is a plasma distribution diagram obtained by the first adjustment method
  • Figure 8E is a plasma distribution diagram obtained by the second adjustment method
  • FIG. 9A is a top cross-sectional view of a second resonating mechanism employed in a second embodiment of the present invention.
  • 9B is a front cross-sectional view showing a second type of adjustment mechanism adopted by the second embodiment of the present invention.
  • 9C is a front cross-sectional view showing a second type of adjustment mechanism adopted by the second embodiment of the second embodiment of the present invention.
  • FIG. 10 is a schematic structural diagram of a surface wave plasma device according to a third embodiment of the present invention.
  • FIG. 11 is a schematic structural diagram of a surface wave plasma device according to a fourth embodiment of the present invention.
  • the invention provides a surface wave plasma device comprising a microwave generating device, a microwave transmission matching structure, a vacuum chamber and a resonant cavity which are sequentially connected, wherein: the microwave generating device is used for generating microwaves; and the microwave transmission matching structure comprises a rectangular waveguide.
  • the vacuum chamber is a process chamber requiring a plasma environment and having a predetermined degree of vacuum, such as a plasma reaction chamber, etc.;
  • the resonant cavity is used to generate a resonant mode of the microwaves therein to enable Is fed into the vacuum chamber 19, which is disposed between the rectangular waveguide and the vacuum chamber, and is in closed communication with the rectangular waveguide and sealingly connected to the vacuum chamber, and the bottom wall of the resonant cavity is provided with a plurality of dielectric windows.
  • the orthographic projection of the plurality of dielectric windows in the plane of the bottom surface of the vacuum chamber falls within the inner wall of the vacuum chamber within a range defined by the orthographic projection of the plane to respectively couple microwave energy into the vacuum chamber.
  • the "substrate wall of the resonant cavity is provided with a plurality of dielectric windows” should be understood as follows: the so-called “plurality” is not the total number of dielectric windows provided on the bottom wall of the resonant cavity, but an effective dielectric window.
  • the quantity, the so-called effective medium window refers to the dielectric window that can actually function as a plasma source during the process, that is, the dielectric window that can couple the microwave energy into the vacuum chamber. From the positional relationship, the effective medium
  • the orthographic projection of the window in the plane of the bottom surface of the vacuum chamber should fall within the inner wall of the vacuum chamber within the range defined by the orthographic projection of the plane, where "falling in” encompasses complete fall and partial fall.
  • closed communication refers to the resonant cavity and the rectangular wave.
  • the internal spaces of the two are connected to each other and the connection between the two is isolated from the external environment to seal the internal space of the two.
  • sealed connection it is meant that the internal space of the cavity and the vacuum chamber are not in communication and sealed at the junction of the two to isolate the internal space of the vacuum chamber from the external environment.
  • FIG. 2 is a schematic structural diagram of a surface wave plasma device according to a first embodiment of the present invention.
  • the surface wave plasma apparatus includes a microwave generating device, a microwave transmission matching structure, a connection chamber 10, a resonant cavity 22, and a vacuum chamber 19 which are sequentially connected.
  • the microwave generating device is configured to generate microwaves, which may include a microwave source power supply 1, a microwave source 2, and a resonator 3 that are sequentially connected.
  • the microwave source power supply 1 supplies power to the microwave source 2; the microwave source 2 can select a magnetron for generating microwaves; and the resonator 3 is used to form a resonant mode of the microwave.
  • the microwave transmission matching structure is for transmitting microwaves generated by the microwave generating device, which may include a cyclone 4, a directional coupler 6, an impedance adjusting unit 7, and a rectangular waveguide 8, which are sequentially connected, and the circulator 4 is also connected to the resonator 3 and the load 5 Connect separately.
  • microwave energy from the microwave generating device is transmitted via the cyclone 4, the directional coupler 6, and the rectangular waveguide 8.
  • the circulator 4 is used to isolate the microwave reflected from the downstream thereof from the microwave generating device, that is, the microwave reflected from the downstream of the circulator 4 is not reflected to the microwave generating device; the load 5 is used to absorb the rectangular shape The reflected power reflected from the waveguide 8; the directional coupler 6 is used to measure the incident power and the reflected power; the impedance adjusting unit 7 is used to adjust the resonant mode of the microwave; and the rectangular waveguide 8 is used to transmit the microwave.
  • the connecting cavity 10 is configured to provide a channel for the microwaves in the rectangular waveguide 8 to be transmitted to the resonant cavity 22, and has a cylindrical shape, the upper end opening is sealingly connected with the rectangular waveguide 8, and the lower end opening is sealingly connected with the resonant cavity 22, thereby realizing the rectangular waveguide 8 It is in closed communication with the resonant cavity 22.
  • a microwave outlet is formed on the lower surface of the middle portion of the rectangular waveguide 8 to cooperate with the connection cavity 10. The upper end opening of the connection cavity 10 is sealingly connected to the microwave outlet.
  • the cavity 22 is used to generate a resonant mode of the microwaves therein so as to be able to be fed into the vacuum chamber 19, which is a hollow cavity structure, disposed between the connection chamber 10 and the vacuum chamber 19, the top wall of which is opened There is a microwave inlet, and the lower end opening of the connection chamber 10 is sealingly connected to the microwave inlet.
  • the resonant cavity 22 is made of a metal such as stainless steel, aluminum alloy, or the like, and may be designed into a cavity of any shape such as a cylindrical shape, a rectangular shape, or a square shape, as the case may be.
  • a support table 21 for placing a workpiece to be processed such as a wafer is disposed in the vacuum chamber 19.
  • the vacuum chamber 19 is used to provide a vacuum environment and a plasma environment for the workpiece to be processed.
  • the vacuum chamber 19 may be a plasma etching chamber or the like.
  • the vacuum chamber 19 is usually made of a metal material such as aluminum alloy or stainless steel.
  • the core components such as the rectangular waveguide and the resonant cavity in the present invention will be described in more detail below.
  • the rectangular waveguide 8 is horizontally placed, its starting end is connected to the impedance adjusting unit 7, and its terminal end is a free end, wherein the lower surface of the segment area is provided with a microwave outlet for communicating with the connecting chamber 10.
  • a first probe 23 of a metallic material is disposed in the middle portion of the rectangular waveguide 8.
  • the first probe 23 is a screw probe, that is, the screw probe is disposed in the rectangular waveguide 8 by means of a screw connection (referred to as "screw").
  • the screw probe 23 sequentially penetrates the rectangular waveguide 8 and the connecting cavity 10 from the axial direction of the resonant cavity 22 from above the middle portion of the rectangular waveguide 8, and extends into the resonant cavity 22.
  • the short-circuiting piston 9 is provided in the rear-end region of the rectangular waveguide 8 so that its position on the rectangular waveguide 8 can be adjusted, that is, the position of the short-circuiting piston 9 in the axial direction of the rectangular waveguide 8 can be changed.
  • the microwave energy when microwave energy is transmitted axially in the terminal direction in the rectangular waveguide 8 and reaches the short-circuiting piston 9, the microwave energy is reflected back by the short-circuiting piston 9.
  • the length of the rectangular waveguide 8 between the starting end of the rectangular waveguide 8 and the short-circuiting piston 9 is referred to as the effective path of the rectangular waveguide 8, i.e., the actual transmission path when microwave energy is transmitted from the beginning end of the rectangular waveguide 8 to its terminal end.
  • the position of the short-circuiting piston 9 can be adjusted by the following arrangement and adjustment mode: the short-circuiting piston 9 is disposed inside the rectangular waveguide 8, and the cooperation between the two can be similar to that of the piston and the cylinder; The driving end of the short-circuiting piston 9 is disposed outside the rectangular waveguide 8, and under the action of the driving end, the short-circuiting piston 9 can be moved back and forth inside the rectangular waveguide 8, thereby realizing its positional adjustment on the rectangular waveguide 8.
  • the rectangular waveguide 8 can be selected from standard parts.
  • the standard rectangular waveguides corresponding to the commonly used 2450 MHz microwaves are: GB BJ-22, BB-22, BJ-26, and the cross-sectional dimensions of various types of rectangular waveguides are different.
  • GB BJ- can be selected.
  • 26 model rectangular waveguide.
  • a part of the microwave energy meets the screw probe 23 from the left side in the middle region of the rectangular waveguide 8 and changes the transmission direction, that is, the part of the microwave energy does not continue.
  • the axial transmission along the rectangular waveguide 8 is transmitted downward in the axial direction of the screw probe 23 and directly enters the left half of the cavity 22 via the connection cavity 10; the other part of the microwave energy does not meet the screw probe 23, and It is directly to the right side of the screw probe 23 and continues to be transmitted toward the terminal end of the rectangular waveguide 8, and is reflected back by the short-circuiting piston 9 when it reaches the short-circuiting piston 9.
  • a portion of the reflected microwave energy will pass over the screw probe 23 and be transmitted to and absorbed by the load 5 via the impedance adjusting unit 7, the directional coupler 6, and the circulator 4; the other portion of the reflected microwave energy from the right side and the screw
  • the probes 23 meet and change the direction of transmission, i.e., the portion of the microwave energy no longer continues to travel along the axial direction of the rectangular waveguide 8 but instead travels down the axial direction of the screw probe 23 and directly into the cavity 22 via the connection chamber 10. The right half.
  • the microwave energy in the rectangular waveguide 8 can be fed by means of the screw probe 23. Inside the cavity 22. Moreover, by adjusting the position of the short-circuiting piston 9 on the rectangular waveguide 8, the microwave energy fed into the left and right portions of the resonant cavity 22 can be balanced, and the microwave energy can be redistributed inside the resonant cavity, thereby feeding the microwave into the resonant cavity. The energy is homogenized to ensure a large area uniformity of plasma in the vacuum chamber.
  • the outer diameter dimension of the screw probe 23 and the inner diameter dimension of the connection cavity 10 are related to the transmission power (transmission efficiency) of the microwave, specifically, the outer diameter dimension of the screw probe 23 and the transmission power of the microwave. (transmission efficiency) is in a negative correlation relationship, and the inner diameter dimension of the connection chamber 10 is positively correlated with the transmission power (transmission efficiency) of the microwave, that is, in the case where the screw probe 23 is inserted in the connection chamber 10, the screw The larger the gap between the outer wall of the probe 23 and the inner wall of the connection chamber 10, the higher the transmission power (transmission efficiency) of the microwave.
  • the ratio of the outer diameter of the screw probe 23 to the inner diameter of the connecting chamber 10 determines the maximum transmission power, which can be calculated from the breakdown voltage of the air under the structure according to the transmission characteristics of the coaxial waveguide. Generally, the ratio may range from 1.65 to 3.59, where the two endpoint values correspond to the maximum transmission power and the minimum loss, respectively. It can be seen that by selecting screw probes 23 of different outer diameter sizes and/or selecting connection cavities 10 of different inner diameters, the transmission power of the microwaves can be adjusted to achieve the desired microwave transmission efficiency and desired loss.
  • the length of the screw probe 23 extending into the cavity 22 there is a correlation between the length of the screw probe 23 extending into the cavity 22 and the electric field feeding efficiency.
  • the electric field feeding efficiency can be adjusted. Improve microwave utilization.
  • the relationship between the length of the screw probe 23 extending into the cavity 22 and the electric field feed efficiency is nonlinear and; in addition to the length associated with the insertion of the screw probe 23 into the cavity 22, the electric field
  • the feed efficiency is also related to factors such as the height of the cavity 22, the number and distribution of the dielectric windows in the cavity 22, and therefore the structure of the entire cavity 22 needs to be integrated to achieve optimum microwave utilization efficiency.
  • first probe 23 in this embodiment is a screw probe And fixed in the rectangular waveguide 8 by screwing, but the invention is not limited thereto, but the first probe 23 may also be arranged in the form of a light column, and may be fixed by snapping or pinning. In the rectangular waveguide 8. Further, when the first probe 23 is in the form of a screw probe, in addition to the screw fixing manner, it may be fixed by means of snapping or pinning.
  • the cavity 22 is placed at the top end of the side wall of the vacuum chamber 19, and the vacuum chamber 19 is blocked by the bottom wall of the cavity 22 to form a closed process environment inside the vacuum chamber 19.
  • the bottom wall of the cavity 22 is provided with a plurality of dielectric windows for coupling microwave energy into the vacuum chamber 19 to generate plasma and to form boundary conditions for surface waves. That is, the vacuum chamber 19 is disposed below the resonant cavity 22, and the microwave forms a standing wave in the resonant cavity 22, and the electric field of the standing wave is coupled into the vacuum chamber 19 through the dielectric window, and the plasma is excited in the vacuum chamber 19. And when the density of the plasma is greater than the critical density at which the surface wave plasma is formed, a surface wave is formed on the lower surface of the dielectric window.
  • the electric field feeding efficiency is related to the height of the resonant cavity 22, in order to be able to adjust the height of the resonant cavity 22, it is preferable to set the resonant cavity 22 in such a form that the resonant cavity 22 is formed by stacking a plurality of metal rings, each The structure of one metal ring is similar to a gasket, and a plurality of stacked metal rings form the side walls of the resonant cavity 22, and the hollow portions of the plurality of stacked metal rings define the cavity of the resonant cavity 22.
  • the number of metal rings can be selected as needed to obtain a resonant cavity 22 of a corresponding height.
  • the height of the cavity 22 may be 10 mm to 200 mm, and the height of the cavity 22 is preferably 10 mm to 85 mm in consideration of equipment volume and manufacturing cost.
  • a metal material such as stainless steel can be usually used.
  • the connecting cavity is connected to the resonant cavity and the rectangular waveguide, and the screw probe is inserted into the cavity through the rectangular waveguide and the connecting cavity, thereby feeding the microwave energy into the connecting cavity and the resonant cavity, and setting through the bottom wall of the resonant cavity a plurality of dielectric windows, such that the electric field of the standing wave formed by the microwave in the resonant cavity can be coupled into the vacuum chamber through the respective dielectric windows, and the plasma is excited in the vacuum chamber, so that the plurality of dielectric windows can be equivalent to a plurality of plasmas Body source, relative to existing For a single plasma source, the surface wave plasma device of this structure can obtain a large area of uniform plasma in the vacuum chamber to meet the needs of large-scale wafer processing.
  • FIG. 3 is a top view of the bottom wall of the resonant cavity
  • FIG. 4 is a cross-sectional view of the bottom wall of the resonant cavity taken along A-A' in FIG. 3
  • FIG. 5 is a dielectric member in a separated state. And a cross-sectional view of the hole in the media piece.
  • the dielectric window can be formed in such a manner that a plurality of dielectric member setting holes 26 are formed in the bottom wall of the resonant cavity, and holes are formed in each of the dielectric members.
  • a dielectric member 24 having a shape matching therein is embedded in 26, by means of which a dielectric window can be formed at each of the dielectric member setting holes 26.
  • six dielectric members 24 are disposed on the bottom wall of the resonant cavity 22, which form a circle around the circumferential direction of the vacuum chamber 19, and each of the dielectric members 24 corresponds to a plasma source during the process.
  • the six dielectric members 24 are evenly arranged along the circumferential direction of the vacuum chamber 19, so that a large area of plasma can be obtained by means of six plasma sources arranged in one turn, and since six dielectric members 24 The arrangement is evenly distributed along the circumferential direction of the vacuum chamber 19, so that the distribution of the plasma is relatively uniform. Since the workpiece to be machined is usually disposed concentrically with the vacuum chamber 19 or disposed on the concentric circle of the vacuum chamber 19 in the vacuum chamber 19, it is more preferable to have the six dielectric members 24 along the circumference of the vacuum chamber 19. The uniform arrangement is made on a circle concentric with the vacuum chamber 19, so that the plasma in the vacuum chamber 19 can be more evenly distributed with respect to the workpiece to be processed.
  • the dielectric member 24 may be arranged in a plurality of layers (i.e., a plurality of turns) from the center to the edge of the vacuum chamber 19, so that the edge region of the vacuum chamber 19 is also A plasma of a desired density can be obtained; and for each layer, a plurality of dielectric members 24 can be evenly arranged in a circle concentric with the vacuum chamber 19 in the circumferential direction of the vacuum chamber 19, thus, a plurality of layers The dielectric member 24 forms a plurality of concentric circles.
  • an orthographic projection of the plurality of dielectric members 24 in the plane of the bottom surface of the vacuum chamber 19 may fall on the inner wall of the vacuum chamber 19 at the plane.
  • the inner wall of the vacuum chamber 19 is outside the orthographic projection of the plane, if The dielectric member 24 is disposed too close to the inner wall of the cavity 22 such that its orthographic projection in the plane of the bottom surface of the vacuum chamber 19 fails to fall within the inner wall of the vacuum chamber 19 within the range defined by the orthographic projection of the plane This will result in less excitation and utilization of the dielectric member 24 within the vacuum chamber 19.
  • the dielectric member 24 can be mounted to the bottom wall of the cavity 22 in such a manner that, for example, the dielectric member is not provided in the bottom wall of the cavity 22, but the dielectric member 24 is directly placed on the bottom wall of the cavity 22. Extending from the bottom wall of the resonant cavity 22; or a plurality of dielectric member-providing holes 26 of the same number as the dielectric members 24 are provided on the bottom wall of the resonant cavity 22, the plurality of dielectric members providing the shape of the holes 26. One-to-one correspondence with the shapes of the plurality of dielectric members 24, and each of the dielectric member-providing holes 26 is embedded with a dielectric member 24 having a shape matched thereto.
  • the shape of the dielectric member 24 in this embodiment is similar to the combination of two cylinders (the first cylinder 241 and the second cylinder 242), the first cylinder 241 and the second.
  • the cylinders 242 are coaxially disposed and stacked one on another, with the first cylinder 241 located above and having a diameter greater than the diameter of the second cylinder 242 to form an inverted "convex" shape.
  • the dielectric member setting hole 26 is disposed in an inverted "convex" shape matching the dielectric member 24.
  • the counterbore 261 of the dielectric member setting hole 26 is a cylindrical counterbore
  • the via 262 is a light hole. .
  • the first cylinder 241 is placed in the counterbore 261, and the second cylinder 242 is placed in the via 262.
  • the height of the second pillar 242 should be greater than or equal to the depth of the via 262, that is, the lower surface of the second pillar 241 is flush with the lower surface of the bottom wall of the resonant cavity 22 or protrudes downward from the cavity 22
  • the lower surface of the bottom wall couples the electric field of the standing wave formed by the microwaves within the cavity into the vacuum chamber 19.
  • the dielectric member 24 in this embodiment is a combination of two cylinders having a minimum diameter that is the diameter of the second cylinder 242. Since the area of the dielectric member 24 is sufficient for the overall setting of the dielectric member 24 For example, for a dielectric member 24 disposed on the same concentric circle, the larger the area of the single dielectric member 24, the smaller the number that can be set, so that a comprehensive consideration is needed in determining the minimum diameter of the dielectric member 24.
  • the area of the single dielectric member 24 and the overall number of the dielectric members 24, in practical applications, the minimum diameter of the dielectric member 24 is preferably set to 40 mm - 120 mm.
  • the diameter of the second cylinder 242 can be set to 60 mm
  • the diameter of the first cylinder 241 can be set to 90 mm.
  • the shape and assembly manner of the dielectric member and the dielectric member providing hole are a preferred embodiment for facilitating processing, mounting and fixing.
  • the dielectric member and the dielectric member are disposed.
  • the shape of the hole may not be limited thereto, for example, the dielectric member may be provided as a single cylinder or a single frustum or a combination of a cylinder and a frustum or a combination of a plurality of frustums, and accordingly, the dielectric member setting hole may be set to a hole of a single cylinder shape or a hole of a single frustum shape or a combination of a shape of a cylinder and a frustum or a combination of a plurality of frustums, wherein the cylinder comprises a cylinder and a prism, a so-called frustum Including a truncated cone and a frustum, the so-called multiple fingers are more than two
  • the shapes of the plurality of dielectric members on the bottom wall of the resonant cavity 22 need not be identical to each other.
  • the dielectric member in the embodiment of the present invention may be made of quartz, ceramic, quartz coated with antimony trioxide or ceramic coated with antimony trioxide.
  • the diameter of the top surface of the frustum is set to be larger than the diameter of the bottom surface, so that the weight of the dielectric member can be utilized. It is more securely mounted in the media member setting hole.
  • the dielectric member is provided in a combination of a plurality of cylinders (for example, the two cylinder assembly structures shown in FIG. 6A), the plurality of cylinders are coaxially and stacked one on another, and the dielectric member is assembled and detached for convenience.
  • the diameter of the lower stage cylinder is not larger than the diameter of the upper stage cylinder.
  • the dielectric member When the dielectric member is provided in a combination of a plurality of frustums (for example, the two-stage frustum structure shown in FIGS. 6B and 6C), the plurality of frustums are coaxially arranged one upon another and stacked step by step, and for ease of installation and disassembly
  • the dielectric member the diameter of the top surface of the lower stage frustum is not larger than the diameter of the bottom surface of the upper stage frustum.
  • the dielectric piece When the dielectric piece is set to a cylinder and cone
  • the combination of the stages for example, the column and frustum combination structure shown in FIGS.
  • the column and the frustum are coaxially and stacked one on another, and the lower stage is installed for the purpose of facilitating installation and disassembly of the medium member.
  • the diameter of the top surface of the cylinder/frustum is not greater than the diameter of the bottom surface of the upper cylinder/frustum.
  • the "upper” and “lower” in the “upper level” and “lower level” are not based on the “upper” and “lower” in the positional relationship, but are arranged according to the insertion of the dielectric member in the assembly.
  • the level that first extends into the hole in the dielectric member is called the "lower level”
  • the level that extends into the hole of the dielectric member immediately following the “lower level” is called
  • the first stage first protrudes into the dielectric member setting hole, so it is called the next stage, and the level at the upper position in the positional relationship is called the upper level; otherwise, when the dielectric member is from the lower side of the bottom wall of the resonant cavity
  • the one level at the upper position in the positional relationship first protrudes into the dielectric member setting hole and is referred to as the next level
  • the lower level in the positional relationship is referred to as the upper level.
  • the dielectric member 24 is preferably mounted from above the bottom wall of the resonant cavity 22 to secure the dielectric member 24 to the resonant cavity 22 by the weight of the dielectric member 24 itself. On the bottom wall.
  • a seal such as a sealing ring is provided therebetween.
  • the seal between the dielectric member 24 and the bottom wall of the resonant cavity 22 will be described in detail below with reference to FIGS. 2 and 5.
  • annular groove is formed in the circumferential direction of the lower surface of the counterbore 261 of the dielectric member providing hole 26, and an annular seal ring 17 is provided therein, and the annular groove and the annular seal ring 17 are provided.
  • Extending along the circumference of the media member 24 forms a closed annular structure around the axis of the media member 24.
  • a sealing member is disposed between the dielectric member and the bottom wall of the resonant cavity corresponding to each of the dielectric members, and the sealing member extends along the circumferential direction of the dielectric member to form an axis surrounding the dielectric member.
  • the closed annular structure, and along the circumferential direction of the seal, the dielectric member and the resonant cavity are always in contact with the seal to achieve a seal between the dielectric member and the bottom wall of the cavity.
  • a sealing ring seating groove may be formed on the bottom wall of the resonant cavity along the circumferential direction of the dielectric member, and the annular sealing ring is disposed therein to thereby form the medium along the circumferential direction of the dielectric member
  • the sleeve is sleeved therein to block the gap between the dielectric member and the bottom wall of the cavity; or, a sealing ring can be formed on the dielectric member along the circumferential direction thereof, and the annular sealing ring is placed therein to be along the medium
  • the circumferential direction of the piece is sleeved therein to block the gap between the dielectric member and the bottom wall of the cavity; or, the bottom wall of the cavity may be simultaneously sealed along the circumferential direction of the dielectric member.
  • a ring is disposed, and a sealing ring is disposed along the circumferential direction of the dielectric member, and a sealing ring is disposed in each sealing ring seating groove, so that the dielectric member is sleeved in the circumferential direction of the dielectric member, This seals the gap between the dielectric member and the bottom wall of the cavity.
  • the sealing ring can be directly placed on the contact surface between the dielectric member and the bottom wall of the resonant cavity, by the contact and pressing between the dielectric member and the bottom wall of the resonant cavity.
  • the annular sealing ring is sleeved on the dielectric member, and the dielectric member is placed in the dielectric member setting hole of the bottom wall of the resonant cavity, so that the sealing ring can be positioned and sealed as well; , the annular sealing ring is placed on the upper surface of the counterbore 261 shown in FIG. 5, and the upper surface of the dielectric member and the counterbore 261 and the annular sealing ring are disposed in the case where the dielectric member is disposed in the dielectric member providing hole. Contact and extrusion to achieve the positioning and sealing of the seal.
  • a second probe can be placed within the resonant cavity 22.
  • the second probe 27 in the resonant cavity 22 will be described in detail below with reference to FIGS. 2 and 3.
  • a second probe 27 is also included inside the resonant cavity 22, which is made of a metal material, and the number and position correspond to the number and position of the dielectric member 24, specifically, the second probe. 27 and the number of the dielectric members 24 are six, and each of the second probes 27 corresponds to one.
  • the media members 24, and the orthographic projection of each of the second probes 27 on the plane of the corresponding media member 24 is coaxial with the orthographic projection of the media member 24 on the plane.
  • the second probe 27 is disposed on the top wall of the resonant cavity 22 and extends downward in the axial direction of the resonant cavity 22, that is, the second probe 27 is disposed in the resonant cavity 22 along the axial direction of the resonant cavity 22. Between the top wall and the dielectric member 24, and one end of the second probe 27 is connected to the top wall of the resonant cavity 22, and the other end (lower end) extends downward along the axial direction of the resonant cavity 22, and the degree of extension thereof can be up to The upper surface of the dielectric member 24 is in contact (but not the dielectric member 24).
  • the reason why the second probe 27 cannot press the dielectric member 24 is that during the process of exciting the plasma, the temperature of the dielectric member 24 rises, causing its volume to expand, if the second probe 27 originally squeezes the dielectric member 24 The pressure between the volume-expanded dielectric member 24 and the second probe 27 is excessively increased to cause the dielectric member 24 to be broken.
  • the surface wave plasma device is capable of working well at low discharge pressures.
  • the edge of the orthographic projection of the second probe 27 on the plane of its corresponding media member 24 and the edge of the medial projection of the media member 24 on the plane The distance W cannot be too small, preferably, W is greater than or equal to 2 cm.
  • the second probes 27 in the embodiment of the present invention correspond to the number and position of the dielectric members 24, the present invention is not limited thereto, and in practical applications, the second probes 27
  • the number of the second probes 27 may also be offset from the position of the dielectric member 24.
  • the second probe 27 may be disposed on the top wall of the resonant cavity 22.
  • the gap between the dielectric members 24 is directly opposite the position, and/or may also be provided at the gap between the dielectric members 24 on the bottom wall of the resonant cavity 22.
  • the specific number and position thereof can also be determined in consideration of the size, height and shape of the cavity 22.
  • the surface wave plasma device provided by the embodiment of the present invention can generate a large area of plasma, and thus can reach an industrial application level; and, in the case where the second probe 27 is appropriately disposed in the resonant cavity, the pole can be Initial ionization is achieved with lower power at low air pressure, thereby expanding the process interval of the surface wave plasma device.
  • the extension length of the second probe 27 within the resonant cavity 22 is adjustable.
  • the extension length refers to the distance between the lower end of the second probe 27 and the top wall of the resonant cavity 22.
  • the surface wave plasma device in the second embodiment of the present invention differs from the surface wave plasma device provided in the foregoing first embodiment in the structure of the resonant cavity, as for the microwave generating device, the microwave transmission matching structure, the connecting cavity 10, and the vacuum chamber.
  • the structure of the chamber 19 and its functions are the same as those of the respective structures described above in connection with the first embodiment, and will not be described herein.
  • the resonant cavity in this embodiment will be described in detail below.
  • a plurality of dielectric windows may be disposed in such a manner that a plurality of dielectric member-providing holes 441 are formed in the bottom wall 44 of the resonant cavity 22, and the bottom wall 44 of the resonant cavity 22 is A dielectric member (hereinafter simply referred to as a dielectric plate) 45 having a plate-like structure is disposed between the vacuum chambers 19, and the dielectric plate 45 can cover all of the dielectric member-providing holes 441, that is, by means of the dielectric plate 45, each can be A dielectric window is formed at the dielectric member setting hole 441.
  • a dielectric plate 45 having a plate-like structure
  • the resonant cavity 22 in this embodiment is disposed on the top of the vacuum chamber 19, which is a cavity structure made of metal such as copper, aluminum, stainless steel or aluminum alloy.
  • the top wall of the resonant cavity 22 is provided with a plurality of second probes 27 extending in the axial direction of the resonant cavity 22, the upper end of which extends above the top wall of the resonant cavity 22, and the lower end of which extends through the resonance
  • the top wall of the cavity 22 extends to the inside of the cavity 22, and the second probe 27 is disposed to be movable up and down along the axial direction of the cavity 22 with respect to the bottom wall of the cavity 22, that is, the second probe 27
  • the spacing between the lower end and the bottom wall of the resonant cavity 22 can be adjusted and varied.
  • the bottom wall 44 is provided with a plurality of dielectric member-providing holes 441 penetrating the bottom wall 44 in the thickness direction thereof, and the number and positions of the plurality of dielectric member-providing holes 441 and the number and positions of the plurality of second probes 27 are one by one. correspond.
  • This bottom wall 44 serves as an antenna board, hereinafter referred to as an antenna board 44.
  • a dielectric member (hereinafter simply referred to as a dielectric plate) 45 having a plate-like structure for coupling microwave energy into the vacuum chamber 19 to excite plasma in the vacuum chamber 19 is disposed under the antenna plate 44.
  • the dielectric plate 45 is disposed between the antenna plate 44 and the vacuum chamber 19, and is sealingly connected to the vacuum chamber 19, that is, the dielectric member 45 adopts a monolithic structure to isolate the antenna plate 44 from the vacuum chamber 19. This not only allows the microwave energy to be coupled into the vacuum chamber 19, but also allows the interface between the cavity 22 and the vacuum chamber 19 to be a dielectric material, thereby avoiding metal contamination.
  • the material used for the dielectric member 45 includes quartz, ceramic, quartz coated with antimony trioxide or ceramic coated with antimony trioxide.
  • the thickness of the dielectric member 45 ranges from 5 to 80 mm.
  • a high frequency electromagnetic field is formed in the cavity 22 near the second probe 27, and the distribution of the high frequency electromagnetic field affects the density distribution of the plasma formed in the vacuum chamber 19.
  • the distribution of the high frequency electromagnetic field can be adjusted, so that the density distribution of the plasma formed in the vacuum chamber 19 can be adjusted in real time, and Different requirements for plasma distribution under different process conditions can be met.
  • the initial ionization of the reaction gas can be formed using a lower power under extremely low gas pressure conditions, thereby expanding the process interval.
  • the projections of the plurality of second probes 27 are distributed at the center of the plane of the antenna board 44, and the radius is Different two concentric circles (inner ring circumference and outer ring circumference).
  • the radius is Different two concentric circles (inner ring circumference and outer ring circumference).
  • the vertical spacing H1 between the lower ends of the six second probes 27N distributed on the circumference of the inner ring and the antenna plate 44 is the same, and 12 second probes distributed on the circumference of the outer ring.
  • H1 10 mm
  • H2 40 mm.
  • H1 10 mm
  • H2 40 mm
  • the plasma distributed over the support table 21 is distributed more densely in the region corresponding to the six second probes 27N distributed on the circumference of the inner ring than in the outer ring.
  • the density of the distribution of the regions corresponding to the twelve second probes 27W on the circumference is as shown in Fig. 8D, thereby realizing the adjustment of the density distribution of the plasma.
  • the vertical pitch H4 between the lower ends of the six second probes 27N distributed on the circumference of the inner ring and the antenna plate 44 is the same, and the lower ends of the twelve second probes 27W distributed on the circumference of the outer ring.
  • H3 10 mm
  • H4 30 mm.
  • the plasma distributed over the support table 21 is distributed more densely in the region corresponding to the 12 second probes 27W distributed on the circumference of the outer ring than in the inner ring.
  • the density of the distribution of the regions corresponding to the six second probes 27N on the circumference is as shown in Fig. 8E, thereby realizing the adjustment of the density distribution of the plasma.
  • the vertical spacing between the lower end of the second probe on the same circumference and the antenna plate may be set to be different according to specific conditions to meet the plasma distribution under different process conditions. Different requirements.
  • the projections of the plurality of second probes 27 are distributed in two concentric circles having a center of a center of the plane of the antenna board 44 and having different radii ( The inner ring circumference and the outer ring circumference); however, the invention is not limited Therefore, in practical applications, the number of concentric circles can also be three or more.
  • the lifting movement of the second probe 27 may be automatically adjusted remotely by using a lifting mechanism, or the lifting movement of the second probe 27 may be manually adjusted.
  • the resonant cavity 22 further includes a plurality of lifting mechanisms (not shown), the number of the lifting mechanisms corresponding to the number of circumferences, and the respective lifting mechanisms are used for driving in one-to-one correspondence All of the second probes on each circumference rise synchronously or synchronously, that is, corresponding to the two concentric circles of the embodiment, the lifting mechanism is two, one of which is used to synchronously drive all the second on the circumference of the inner ring The probe 27N; the other of which is used to synchronously drive all of the second probes 27W on the circumference of the outer ring.
  • the number of lifting mechanisms may correspond to the number of second probes, each lifting mechanism for driving one of the second probes to rise or fall in a one-to-one correspondence. That is to say, the number of lifting mechanisms is 18, and each lifting mechanism is used to individually drive a corresponding one of the second probes to rise or fall.
  • the lifting mechanism may be a lifting and lowering motor, a lifting cylinder or a lifting hydraulic cylinder or the like having a lifting and lowering driving function.
  • each of the second probes has an external thread, and a threaded hole penetrating the thickness thereof is disposed on the top wall wall 421 of the cavity 22, and each of the second probes 27 has a one-to-one correspondence through the external threads thereof. Grounded in each threaded hole.
  • the vertical spacing between the lower end of the second probe and the antenna plate 44 is adjusted by manually rotating any one of the second probes 27 clockwise or counterclockwise.
  • the automatic adjustment mode can also be adopted instead of the manual adjustment mode, that is, the driving mechanism such as a rotating electric machine is used to automatically drive any one of the second probes 27 to rotate clockwise or counterclockwise, thereby realizing Adjustment of the vertical spacing between the lower end of the second probe 27 and the antenna plate 44.
  • the driving mechanism such as a rotating electric machine is used to automatically drive any one of the second probes 27 to rotate clockwise or counterclockwise, thereby realizing Adjustment of the vertical spacing between the lower end of the second probe 27 and the antenna plate 44.
  • the projections of the plurality of second probes 27 are distributed on a circumference centered on the center of the plane of the antenna board 44. . As shown in Fig. 9A, there are five second probes 27D distributed on the circumference, respectively 43D1 to 43D5.
  • the vertical spacing H5 between the lower ends of the five second probes 27D distributed on the circumference and the antenna board 44 is different, and the lower end of one of the second probes 27D is interposed between the antenna board 44 and the antenna board 44.
  • the plasma distributed above the support table 21 is distributed in a region corresponding to one of the second probes 27D having a vertical pitch of H7, and the density is less than the distribution distributed at a vertical interval of H6. The density of the distribution of the regions corresponding to the second probes 27D, thereby achieving adjustment of the density distribution of the plasma.
  • the lifting movement of the second probe 27 may be automatically adjusted remotely by using a lifting mechanism, or the lifting movement of the second probe 27 may be manually adjusted.
  • the lifting mechanism is similar to the lifting mechanism in the first arrangement described above, except that the lifting mechanism can also be one for driving all the second probes to rise or fall synchronously.
  • the manual adjustment mode is the same as the manual adjustment mode in the above-mentioned first arrangement mode, and details are not described herein again.
  • the vertical spacing between the lower end of the second probe 27 and the antenna plate 44 is not less than 10 mm to avoid atmospheric breakdown under high power conditions.
  • the length of the resonant cavity 22 in the vertical direction ranges from 10 to 200 mm to reserve sufficient space for the lifting movement of the second probe 27.
  • the dielectric member setting hole 441 on the antenna board 44 may be a circular hole, and the diameter of the circular hole may range from 20 to 120 mm, preferably 40 to 120 mm; or the dielectric member on the antenna board 44 is disposed.
  • the hole 441 may also be a square hole having a side length ranging from 20 to 120 mm, preferably from 40 to 120 mm.
  • the dielectric member setting holes on the antenna board 44 may be other through holes of any shape.
  • a plurality of dielectric member setting holes are formed in the bottom wall of the resonant cavity, and a dielectric member is disposed between the bottom wall of the resonant cavity and the vacuum chamber, the dielectric member includes a mounting plate and is embedded in the mounting plate a plurality of dielectric blocks each penetrating the mounting plate along a thickness direction of the mounting plate, and the number and arrangement positions of the plurality of dielectric blocks are in one-to-one correspondence with the number and positions of the plurality of dielectric member setting holes, by means of each
  • the dielectric member may form a dielectric window at its corresponding dielectric member setting hole.
  • the dielectric block comprises a separate structural member that is processed into a fixed shape and can be embedded in the dielectric member providing hole, and also includes particles, powder or sheet made of the aforementioned dielectric material that can be filled in the dielectric member setting hole.
  • a surface wave plasma apparatus according to a third embodiment of the present invention will be described in detail below with reference to FIG.
  • the difference between the surface wave plasma device in the third embodiment of the present invention and the surface wave plasma device provided in the foregoing first embodiment is that the present embodiment eliminates the connection cavity connected between the rectangular waveguide 8 and the resonant cavity 22, Rather, the upper surface of the resonant cavity 22 is directly stacked on the lower surface of the rectangular waveguide 8, and the microwave outlet opened by the bottom wall of the rectangular waveguide 8 is aligned with the microwave inlet opened by the top wall of the resonant cavity 22 and The joint is sealed, and the rectangular waveguide 8 and the resonant cavity 22 are hermetically connected.
  • the screw probe 23 extends directly from the rectangular waveguide 8 into the cavity 22.
  • the respective structures described above in connection with the first embodiment have the same functions and will not be described again.
  • a surface wave plasma apparatus according to a fourth embodiment of the present invention will be described in detail below with reference to FIG.
  • the surface wave plasma apparatus in the fourth embodiment of the present invention is similar to the surface wave plasma apparatus in the foregoing first embodiment, and the difference is that in the present embodiment, the screw probe 23 is omitted and connected to the rectangular waveguide 8. And a connection cavity between the cavity 22, and the microwave outlet of the rectangular waveguide 8 is not disposed in the middle portion thereof but at the end thereof, that is, the terminal of the rectangular waveguide 8 has a microwave outlet, and the microwave inlet of the microwave outlet and the resonant cavity The sealing is performed at the junction of the two, and the rectangular waveguide 8 and the resonant cavity 22 are hermetically connected.

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Abstract

一种表面波等离子体设备，包括依次连接的微波发生装置、微波传输匹配结构和真空腔室（19），其中，所述微波传输匹配结构包括矩形波导（8），用于传输所述微波发生装置产生的微波，所述设备还包括谐振腔（22），其设置在所述矩形波导（8）和真空腔室（19）之间，并与所述矩形波导（8）密闭连通以及与所述真空腔室（19）密封连接，且所述谐振腔（22）的底壁设置有多个介质窗，所述多个介质窗在所述真空腔室（19）的底面所在平面中的正投影落入所述真空腔室（19）的内壁在该平面的正投影所限定的范围内，以分别将微波能量耦合进入所述真空腔室（19）。所述表面波等离子体设备可在真空腔室（19）内获得大面积的均匀的等离子体，从而可满足大尺寸的晶片加工需求。

Description

表面波等离子体设备 技术领域
本发明涉及半导体设备制造技术领域，具体涉及一种表面波等离子体设备。
背景技术
近年来，随着电子技术的高速发展，人们对集成电路的要求趋向于高度集成化和更大面积化，这就要求生产集成电路(IC)的企业需要不断提高半导体晶片的加工能力。等离子体装置在集成电路或MEMS(Micro-Electro-Mechanical System，微机电系统)器件的制造工艺中是不可取代的，因此，高性能等离子体发生设备的研发对于半导体制造工艺的发展至关重要。当等离子体装置用于半导体制造工艺时，最主要的考察因素是：在一定气压范围内能有效率地生成大面积的均匀的等离子体。具体到工艺细节，关注点往往在于工艺气体、气压、等离子体均匀程度以及等离子体内的粒子成分即等离子体的可控性。为此，对于等离子体源而言，能在低气压下激发大面积的、高密度的、均匀的等离子体的等离子体源是当前的主要研究方向。
在传统的半导体制造业，各种类型的等离子体设备被广泛应用于各种工艺，例如，电容耦合等离子体(CCP)类型，电感耦合等离子体(ICP)类型以及表面波(SWP)或电子回旋共振等离子体(ECR)等类型。表面波等离子体是近年来发展起来的新型等离子体发生技术，相较于电感耦合等离子体，其结构更加简单，且在获得大面积且均匀的等离子体方面具有不可忽视的优势。由于表面波加热的机理，微波能量被约束在等离子体和介质的边界上，实际上使用的等离子体是没有激励源影响的远程等离子体，因此相较于电容耦合等离子体和电感耦合等离子体，其电子 温度更低，从而减少了高能电子带来的对器件表面的等离子体损伤。表面波是指，利用微波在介质表面附近激发出高于表面波临界密度以上的等离子体，微波在介质表面等离子体区域沿法向迅速衰减，而在介质与等离子体边界上形成沿表面传输的波。表面波在其传输的范围内可形成周期性的强电场，从而维持高密度的等离子体，此即表面波等离子体的形成原理。
图1a为一种现有的表面波等离子体设备的结构示意图，图1b为图1a的表面波等离子体设备中的表面波天线缝隙板的结构示意图。请一并参阅图1a和图1b，该表面波等离子体设备包括：微波源及微波传输匹配结构、表面波天线结构和腔室三个部分，其中，微波源及微波传输匹配结构包括：微波源供电电源1、微波源2、谐振器3、环流器4、用于吸收反射功率的负载5、用于测量入射功率和反射功率的定向耦合器6、阻抗调节单元7和矩形波导8。如图所示，表面波天线结构包括：自上而下依次层叠设置的天线主体11、滞波板12、缝隙板15和介质板16。其中，天线主体11呈圆柱形，通常由铝、不锈钢等金属材料制成。缝隙板15为天线板，多由铝、不锈钢等金属材料制成，其形状为圆盘状，且在其上由内到外均匀分布有多圈缝隙结构，每一圈缝隙结构均包含多个T型结构的缝隙且这些T型结构的缝隙沿圆周方向均匀分布。滞波板12呈圆盘状，为低损耗的介质板，其介质可以为Al2O3，SiO2或SiN(硅氮化合物)，微波能量通过滞波板12后其波长被压缩，从而使得微波在缝隙板15上产生圆偏振，圆偏振的波通过介质板16在真空腔室19内激发产生等离子体，介质板16通常为石英。腔室包括：腔体18、用于密封腔体18和天线主体11的密封圈17和用于放置晶片20的支撑台21。
图1a和图1b示出了常用的表面波等离子体设备，然而其在实际应用中却难以获得大面积均匀的等离子体，具体原因在于：该表面波等离 子体设备中的表面波天线结构采用狭缝开槽天线方式实现微波馈入，其等效于一个等离子体源，且在馈入时微波是以同轴的方式实现馈入的，即，来自矩形波导8的微波自滞波板12的中心区域进入滞波板12，在滞波板12内沿径向呈发散状传输，并在传输过程中延径向逐渐衰减，导致能量在径向上分布不均匀，从而限制了所产生的等离子体中分布密度呈均匀状态的那一部分等离子体(以下简称为均匀的等离子体)的面积大小。因而，采用狭缝开槽天线的微波馈入方式的表面波等离子体设备所能产生的均匀的等离子体的面积目前最大只能适用于直径为8寸晶片，无法实现对12寸等的更大直径的工业级别晶片进行加工。
发明内容
为解决现有技术中的至少一个问题，本发明提供了一种表面波等离子体设备。
本发明为解决上述技术问题，提供一种表面波等离子体设备，包括依次连接的微波发生装置、微波传输匹配结构和真空腔室，其中，所述微波传输匹配结构包括矩形波导，用于传输所述微波发生装置产生的微波。并且，所述表面波等离子体设备还包括谐振腔，其设置在所述矩形波导和所述真空腔室之间，并与所述矩形波导密闭连通以及与所述真空腔室密封连接，且所述谐振腔的底壁设置有多个介质窗，所述多个介质窗在所述真空腔室的底面所在平面中的正投影落入所述真空腔室的内壁在该平面的正投影所限定的范围内，以分别将微波能量耦合进入所述真空腔室。
其中，所述矩形波导的终端与所述谐振腔密闭连通。
其中，所述矩形波导的中段区域与所述谐振腔密闭连通。
其中，所述多个介质窗沿所述真空腔室的周向均匀分布。
其中，所述多个介质窗采用这样的方式设置而成：在所述谐振腔的 底壁上开设有多个介质件设置孔，在每一个所述介质件设置孔中嵌置有形状与之相匹配的介质件。
其中，每一个所述介质件的形状为下述形状之一：柱体、锥台、多个柱体的组合、多个锥台的组合、柱体与锥台的组合。
其中，所述介质件的形状为多个柱体的组合时，所述多个柱体彼此同轴且逐级层叠设置，并且下一级柱体的直径不大于上一级柱体的直径；或者所述介质件的形状为多个锥台的组合时，所述多个锥台彼此同轴且逐级层叠设置，并且下一级锥台的顶面的直径不大于上一级锥台的底面的直径；或者所述介质件的形状为柱体与锥台的组合时，所述柱体与锥台彼此同轴且逐级层叠设置，并且下一级柱体/锥台的顶面的直径不大于上一级柱体/锥台的底面的直径。
其中，所述多个介质窗采用这样的方式设置而成：在所述谐振腔的底壁上开设有多个介质件设置孔，在所述谐振腔的底壁和所述真空腔室之间设置有介质件，所述介质件被设置成板状结构且能够覆盖所述多个介质件设置孔；或者在所述谐振腔的底壁上开设有多个介质件设置孔，在所述谐振腔的底壁和所述真空腔室之间设置有介质件，所述介质件包括安装板以及内嵌在所述安装板中的多个介质块，每个所述介质块均沿所述安装板的厚度方向贯穿所述安装板，且所述多个介质块的数量和设置位置与所述多个介质件设置孔的数量和位置一一对应。
其中，所述介质件的厚度的取值范围在5～80mm。
其中，所述介质件的最小直径的取值范围为40mm-120mm。
其中，所述表面波等离子体设备还包括第一探针，其设置在所述矩形波导的中段区域，且其一端延伸至所述谐振腔内，用于将所述矩形波导中的微波引入到所述谐振腔内。
其中，所述第一探针的另一端沿着背离所述谐振腔的方向延伸至所述矩形波导的外部。
其中，所述第一探针采用螺接或卡接或销接的方式进行固定。
其中，所述表面波等离子体设备还包括连接腔，其设置在所述矩形波导的微波出口和所述谐振腔的微波入口之间，并与二者密封连接，所述第一探针的一端贯穿所述连接腔并延伸至所述谐振腔内。
其中，所述表面波等离子体设备还包括短路活塞，其设置在所述矩形波导的后段区域，并能沿所述矩形波导的轴线与之做相对运动，以调节所述矩形波导有效通路的长度。
其中，所述表面波等离子体设备还包括沿谐振腔的轴向延伸的第二探针，其上端固定在所述谐振腔的顶壁上或者贯穿所述谐振腔的顶壁而延伸至所述谐振腔的上方，其下端位于所述谐振腔的内部。
其中，所述第二探针被设置成能沿所述谐振腔的轴向相对于所述谐振腔的底壁升降。
其中，所述第二探针的设置位置与所述介质窗相对应。
其中，所述第二探针的数量和位置与所述介质窗的数量和位置相对应，且所述第二探针在与其相对应的所述介质窗上的正投影与该介质窗同轴。
其中，所述第二探针在与其相对应的介质窗上的正投影的边缘与该介质窗的边缘之间的距离不小于2cm。
其中，在所述第二探针为多个的情况下，所述多个第二探针在所述真空腔室的底面的投影分布在以所述真空腔室的底面的中心为圆心且半径不同的多个同心圆的圆周上；或者在所述第二探针为多个的情况下，所述多个第二探针在所述真空腔室的底面的投影分布在以所述真空腔室的底面的中心为圆心的一个圆周上。
其中，所述谐振腔还包括升降机构，所述升降机构的数量与所述圆周的数量相对应，每个所述升降机构用于对应地驱动位于同一个圆周上的所有第二探针同步上升或同步下降；或者所述升降机构的数量与所述 第二探针的数量相对应，每个所述升降机构对应于一个所述第二探针且用以驱动该第二探针上升或下降。
其中，至少在每个所述第二探针的上部区域设置有外螺纹，在所述谐振腔的顶壁上的设置所述第二探针的位置处开设与所述外螺纹相配合的螺纹孔，所述螺纹孔为通孔或盲孔，所述第二探针一一对应地安装在所述螺纹孔中，通过顺时针或逆时针旋转所述第二探针，实现该第二探针相对于所述谐振腔的底壁的升降。
其中，所述第二探针的下端与所述谐振腔的底壁之间的竖直间距不小于10mm。
其中，所述谐振腔的高度为10mm～200mm。
本发明能够实现以下有益效果：
本发明提供的表面波等离子体设备，在微波传输匹配结构和真空腔室之间设置有谐振腔，且在该谐振腔的底壁上设置有多个介质窗，这样，微波在谐振腔内所形成的驻波的电场可以通过多个介质窗耦合进入真空腔室，由于每一个介质窗可等效为一个等离子体源，因此，本发明提供的表面波等离子体设备相当于有多个等离子体源同时激发等离子体，因而可在真空腔室内获得大面积的均匀的等离子体，从而可满足大尺寸的晶片加工需求。
附图说明
图1a为现有的表面波等离子体设备的结构示意图；
图1b为现有的表面波天线缝隙板的结构示意图；
图2为本发明第一实施例提供的表面波等离子体设备的结构示意图；
图3为谐振腔的底壁的俯视图；
图4为沿图3中的A-A’对谐振腔的底壁进行剖切所得到的剖面图；
图5为处于分离状态下的介质件和介质件设置孔的剖视图；
图6A为两个柱体组合结构的介质件的示意图；
图6B为一种两级锥台结构的介质件的示意图；
图6C为另一种两级锥台结构的介质件的示意图；
图6D为一种柱体和锥台组合结构的介质件的示意图；
图6E为另一种柱体和锥台组合结构的介质件的示意图；
图6F为又一种柱体和锥台组合结构的介质件的示意图；
图6G为再一种柱体和锥台组合结构的介质件的示意图；
图7为本发明第二实施例提供的表面波等离子体设备的结构示意图；
图8A为本发明第二实施例采用的第一种谐振机构的俯视剖面图；
图8B为本发明第二实施例采用的第一种谐振机构采用第一种调节方式的主视剖面图；
图8C为本发明第二实施例采用的第一种谐振机构采用第二种调节方式的主视剖面图；
图8D为采用第一种调节方式获得的等离子体分布图；
图8E为采用第二种调节方式获得的等离子体分布图；
图9A为本发明第二实施例采用的第二种谐振机构的俯视剖面图；
图9B为本发明第二实施例采用的第二种谐振机构采用第一种调节方式的主视剖面图；
图9C为本发明第二实施例采用的第二种谐振机构采用第二种调节方式的主视剖面图；
图10为本发明第三实施例提供的表面波等离子体设备的结构示意图；以及
图11为本发明第四实施例提供的表面波等离子体设备的结构示意图。
具体实施方式
下面将结合本发明中的附图，对本发明中的技术方案进行清楚、完整的描述，显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明提供一种表面波等离子体设备，其包括依次连接的微波发生装置、微波传输匹配结构、真空腔室和谐振腔，其中：微波发生装置用于产生微波；微波传输匹配结构包括矩形波导，用于传输微波发生装置产生的微波；真空腔室为需要等离子体环境且具有预定真空度的工艺腔室，例如等离子体反应腔室等；谐振腔用于使其内的微波产生谐振模式以便能够被馈入到真空腔室19中，其设置在矩形波导和真空腔室之间，并与矩形波导密闭连通以及与真空腔室密封连接，且谐振腔的底壁设置有多个介质窗，所述多个介质窗在真空腔室的底面所在平面中的正投影落入该真空腔室的内壁在该平面的正投影所限定的范围内，以分别将微波能量耦合进入所述真空腔室。需要说明的是，关于“谐振腔的底壁设置有多个介质窗”应当这样理解：所谓“多个”并非是谐振腔的底壁上所设置的介质窗的全部数量，而是有效介质窗的数量，所谓有效介质窗指的是在工艺过程中真正能够起到等离子体源的作用的介质窗，也就是能将微波能量耦合进入真空腔室的介质窗，从位置关系上来说，有效介质窗在真空腔室的底面所在平面中的正投影应当落入该真空腔室的内壁在该平面的正投影所限定的范围内，在此“落入”包含完全落入和部分落入。进一步需要说明的是，所谓密闭连通，指的是谐振腔与矩形波 导二者的内部空间相互连通且二者的连接处与外部环境隔绝而使二者的内部空间密闭。所谓密封连接，指的是谐振腔与真空腔室二者的内部空间不相连通且在二者的连接处进行密封而使真空腔室的内部空间与外部环境相隔绝。
以下结合图2至图8对本发明的技术方案进行详细说明。
请参阅图2，其为本发明第一实施例提供的表面波等离子体设备的结构示意图。如图2所示，该表面波等离子体设备包括依次连接的微波发生装置、微波传输匹配结构、连接腔10、谐振腔22和真空腔室19。
具体地，微波发生装置用于产生微波，其可包括依次连接的微波源供电电源1、微波源2和谐振器3。微波源供电电源1为微波源2供电；微波源2可选用磁控管，用于产生微波；谐振器3用于使微波形成谐振模式。
微波传输匹配结构用于传输微波发生装置产生的微波，其可包括依次连接的环流器4、定向耦合器6、阻抗调节单元7和矩形波导8，且环流器4还与谐振器3和负载5分别连接。这样，来自微波发生装置的微波能量经由环流器4、定向耦合器6和矩形波导8传输。具体地，环流器4用于将从其下游反射回来的微波与微波发生装置相隔离，也就是使从环流器4的下游反射回来的微波不反射至微波发生装置；负载5用于吸收自矩形波导8反射回来的反射功率；定向耦合器6用于测量入射功率和反射功率；阻抗调节单元7用于调节微波的谐振模式；矩形波导8用于传输微波。
连接腔10用于为矩形波导8内的微波向谐振腔22传输提供通道，其形状呈筒形，上端开口与矩形波导8密封连接，下端开口与谐振腔22密封连接，以此实现矩形波导8与谐振腔22的密闭连通。本实施例中，在矩形波导8的中段区域的下表面开设有与连接腔10相配合的微波出口，连接腔10的上端开口与该微波出口密封连接。
谐振腔22用于使其内的微波产生谐振模式以便能够被馈入到真空腔室19中，其为中空的空腔结构，设置在连接腔10和真空腔室19之间，其顶壁开设有微波入口，连接腔10的下端开口与该微波入口密封连接。通常，谐振腔22采用诸如不锈钢、铝合金等的金属制作，并且可以根据具体情况设计为圆柱形、长方形或者正方形等的任意形状的空腔。
真空腔室19内设置有用于放置晶片等被加工工件的支撑台21。真空腔室19用于为被加工工件提供真空环境和等离子体环境，例如，真空腔室19可以为等离子体刻蚀腔室等。真空腔室19通常采用铝合金、不锈钢等金属材料制成。
下面对本发明中的矩形波导和谐振腔等核心部件进行更详细的说明。
首先，对矩形波导及其相关配件进行详细说明。
矩形波导8水平放置，其起始端与阻抗调节单元7相连，其终端为自由端，其中段区域的下表面开设有用于与连接腔10连通的微波出口。
为了将矩形波导8中的微波能量馈入到位于矩形波导8的下方的谐振腔22，而在该矩形波导8的中段区域设置有金属材质的第一探针23。本实施例中，第一探针23为螺钉探针，即该螺钉探针通过螺纹连接(简称为“螺接”)的方式设置在该矩形波导8中。该螺钉探针23自矩形波导8的中段区域的上方沿谐振腔22的轴向依次贯穿矩形波导8和连接腔10，并伸入谐振腔22内。
优选地，在矩形波导8的后段区域设置有短路活塞9，使其在矩形波导8上的位置能够调节，即，短路活塞9在矩形波导8的轴线方向上的位置可改变。
在实际应用中，微波能量在矩形波导8内沿轴向向终端方向传输并到达该短路活塞9时，该微波能量会被短路活塞9反射回来。通常，将 矩形波导8的起始端至短路活塞9之间的那一段矩形波导8称为矩形波导8的有效通路，即，微波能量自矩形波导8的起始端向其终端传输时的实际传输路径。通过调节短路活塞9在矩形波导8上的位置，可以调节该有效通路的长度。例如，可以通过下述设置方式和调节方式来实现短路活塞9的位置可调：短路活塞9设置在矩形波导8的内部，二者之间的配合方式可类似于活塞与汽缸的配合方式；并且，短路活塞9的驱动端设置在矩形波导8的外部，在该驱动端的作用下，短路活塞9可以在矩形波导8的内部前后运动，从而实现其在矩形波导8上的位置可调。
在实际应用中，矩形波导8可以选用标准件。常用的2450MHz的微波所对应的标准矩形波导的型号有：GB BJ-22、BB-22、BJ-26，各种型号的矩形波导的横截面尺寸不同，本发明实施例中可以选用GB BJ-26型号的矩形波导。
下面详细说明微波能量在矩形波导8中的传输情形。
在微波能量从矩形波导8的起始端向终端方向传输的过程中，一部分微波能量在矩形波导8的中段区域从左边与螺钉探针23相遇并改变传输方向，即，该部分微波能量不再继续沿矩形波导8的轴向传输而是沿螺钉探针23的轴向向下传输并经由连接腔10直接进入谐振腔22内的左半部分；另一部分微波能量未与螺钉探针23相遇，而是直接到达螺钉探针23的右侧并继续向矩形波导8的终端方向传输，并在到达短路活塞9时被短路活塞9反射回来。其中，一部分反射回来的微波能量会越过螺钉探针23并经由阻抗调节单元7、定向耦合器6、环流器4而传输至负载5并被其吸收；另一部分反射回来的微波能量从右边与螺钉探针23相遇并改变传输方向，即，该部分微波能量不再继续沿矩形波导8的轴向传输而是沿螺钉探针23的轴向向下传输并经由连接腔10直接进入谐振腔22内的右半部分。
由上可知，借助螺钉探针23可以将矩形波导8内的微波能量馈入 到谐振腔22内。并且，通过调节短路活塞9在矩形波导8上的位置，可以均衡馈入谐振腔22左、右两部分的微波能量，实现微波能量在谐振腔内部重新分配，从而将馈入谐振腔内的微波能量均匀化，为使真空腔室内等离子体大面积均匀化提供保证。
需要说明的是，螺钉探针23的外径尺寸和连接腔10的内径尺寸与微波的传输功率(传输效率)存在着相关性，具体地，螺钉探针23的外径尺寸与微波的传输功率(传输效率)呈负相关的关系，连接腔10的内径尺寸与微波的传输功率(传输效率)呈正相关的关系，也就是说，在连接腔10中插入有螺钉探针23的情况下，螺钉探针23的外壁与连接腔10的内壁之间的间隙越大，微波的传输功率(传输效率)就会越高。在实际应用中，螺钉探针23的外径和连接腔10的内径的比值决定了最大传输功率，该比值可以根据同轴波导的传输特性，通过该结构下空气的击穿电压计算得到。通常，该比值的取值范围可以为1.65～3.59，其中这两个端点数值分别对应了最大传输功率和最小损耗。由此可知，通过选定不同外径尺寸的螺钉探针23和/或选定不同内径尺寸的连接腔10，可以调节微波的传输功率，从而达到期望的微波传输效率和期望的损耗。
还需要说明的是，螺钉探针23伸入谐振腔22内的长度与电场馈入效率之间存在相关性，通过调节螺钉探针23伸入谐振腔22内的长度，可以调节电场馈入效率，提高微波利用率。事实上，螺钉探针23伸入谐振腔22内的长度与电场馈入效率之间的相关关系并非线性关系；而且，除了与螺钉探针23伸入谐振腔22内的长度相关之外，电场馈入效率还与谐振腔22的高度、谐振腔22内的介质窗的数量和分布等因素相关，因此需要综合整个谐振腔22的结构，才能获得最优的微波利用效率。
进一步需要说明的是，尽管本实施例中的第一探针23为螺钉探针 并且通过螺接的方式固定在矩形波导8中，但是本发明并不局限于此，而是也可以将第一探针23设置成光柱的形式，且可采用卡接或销接的方式固定在矩形波导8中。进一步地，当第一探针23为螺钉探针的形式时，除螺接固定方式外，还可以采用卡接或销接的方式对其进行固定。
接下来，对谐振腔及其相关配件进行详细说明。
谐振腔22置于真空腔室19的侧壁的顶端，借助谐振腔22的底壁对真空腔室19进行封堵，使真空腔室19的内部形成封闭的工艺环境。谐振腔22的底壁设置有多个介质窗，介质窗用于将微波能量耦合进入真空腔室19以产生等离子体，并形成表面波的边界条件。也就是说，真空腔室19设置在谐振腔22的下方，微波在谐振腔22内形成驻波，驻波的电场通过介质窗耦合进入真空腔室19，在真空腔室19内激发等离子体，并在等离子体的密度大于形成表面波等离子体的临界密度时，在介质窗的下表面形成表面波。
由于电场馈入效率与谐振腔22的高度有关，为了能够对谐振腔22的高度进行调节，优选地，将谐振腔22设置成这样的形式：谐振腔22由多个金属环叠置形成，每一个金属环的结构类似于垫片，多个叠置的金属环构成谐振腔22的侧壁，多个叠置的金属环的中空部分限定出谐振腔22的腔室。在实际应用中，可以根据需要选定金属环的数量从而获得相应高度的谐振腔22。例如，谐振腔22的高度可以为10mm-200mm，考虑到设备体积和制造成本，谐振腔22的高度优选为10mm-85mm。至于谐振腔22的材料，通常可以采用不锈钢等金属材料。
本发明实施例利用连接腔连接谐振腔和矩形波导，将螺钉探针经由矩形波导和连接腔伸入谐振腔内部，从而将微波能量馈入连接腔和谐振腔，通过在谐振腔的底壁设置多个介质窗，使得微波在谐振腔内形成的驻波的电场能够通过各介质窗耦合进入真空腔室，并在真空腔室内激发等离子体，因此，多个介质窗可以等效为多个等离子体源，相对于现有 的单一等离子体源来说，这种结构的表面波等离子体设备可以在真空腔室内获得大面积的均匀的等离子体，从而满足大尺寸的晶片加工需求。
下面结合图3至图5详细说明设置在谐振腔底壁的介质窗的结构及其功能。其中，图3为谐振腔的底壁的俯视图；图4为沿图3中的A-A’对谐振腔的底壁进行剖切所得到的剖面图；图5为处于分离状态下的介质件和介质件设置孔的剖视图。
如图3和图4所示，在本发明实施例中，介质窗可以采用这样的方式设置形成：在谐振腔的底壁上开设有多个介质件设置孔26，在每一个介质件设置孔26中嵌置有形状与之相匹配的介质件24，借助于该介质件24，可以在每一个介质件设置孔26处形成介质窗。具体地，在谐振腔22的底壁上设置有6个介质件24，它们沿真空腔室19的周向环绕形成一圈，每一个介质件24在工艺时均相当于一个等离子体源。优选地，6个介质件24沿真空腔室19的周向均匀排布，这样，借助于排布成一圈的6个等离子体源，可以获得大面积的等离子体，并且由于6个介质件24沿真空腔室19的周向均匀排布，因此等离子体的分布较为均匀。由于被加工工件在真空腔室19内通常是与真空腔室19同心设置或者设置在真空腔室19的同心圆上，因此更为优选地，使6个介质件24沿真空腔室19的周向均匀地排布在与真空腔室19同心的圆上，从而使真空腔室19内的等离子体相对于被加工工件能更均匀地分布。更为优选地，为了提高边缘区域的等离子体的密度，可以将介质件24自真空腔室19的中心向边缘排布成多层(即，多圈)，使真空腔室19的边缘区域也能够获得期望密度的等离子体；并且对于每一层而言，可以将多个介质件24沿真空腔室19的周向均匀地排布在与真空腔室19同心的圆上，这样，多层介质件24便形成多个同心圆。更为优选地，为了有效地激发和利用等离子体，可以使所述多个介质件24在真空腔室19的底面所在平面中的正投影落在该真空腔室19的内壁在该平面的正 投影所限定的范围内，也就是说，当谐振腔22的内壁在真空腔室19的底面所在平面中的正投影在该真空腔室19的内壁在该平面的正投影的外侧时，如果将介质件24设置得过于靠近谐振腔22的内壁以至于其在真空腔室19的底面所在平面中的正投影未能落在该真空腔室19的内壁在该平面的正投影所限定的范围内，则会导致该介质件24在真空腔室19内的所激发和利用的等离子体较少。
可以采用这样的方式将介质件24安装到谐振腔22的底壁上，例如，不在谐振腔22的底壁开设介质件设置孔，而是直接将介质件24放置在谐振腔22的底壁上，其突出于谐振腔22的底壁；或者在谐振腔22的底壁上开设有数量与介质件24的数量相同的多个介质件设置孔26，所述多个介质件设置孔26的形状与所述多个介质件24的形状一一对应，且每一个介质件设置孔26中均嵌置有形状与之相匹配的介质件24。
下面详细说明介质件24的结构以及其与介质件设置孔26的配合。
请一并参阅图3至图5，本实施例中的介质件24的形状类似于两个圆柱体(第一柱体241和第二柱体242)的组合，第一柱体241与第二柱体242同轴设置且彼此层叠，第一柱体241位于上方且其直径大于第二柱体242的直径，从而形成倒置的“凸”字型。对应地，介质件设置孔26设置成与介质件24相匹配的倒置的“凸”字型，具体地，该介质件设置孔26的沉孔261为柱形沉孔，过孔262为光孔。在介质件24安置于介质件设置孔26内时，第一柱体241置于沉孔261内，第二柱体242置于过孔262内。其中，第二柱体242的高度应当大于等于过孔262的深度，即，使第二柱体241的下表面与谐振腔22的底壁的下表面平齐或者向下凸出于谐振腔22的底壁的下表面，从而将微波在谐振腔内所形成的驻波的电场耦合进入真空腔室19。
本实施例中的介质件24为两个柱体的组合，其最小直径为第二柱体242的直径。由于介质件24的面积会对介质件24总体的设置数量产 生影响，例如，对于同一个同心圆上设置的介质件24而言，单个介质件24的面积越大，则能够设置的数量越少，因此在确定介质件24的最小直径时，需要综合考量单个介质件24的面积和介质件24总体的设置数量，在实际应用中，介质件24的最小直径优选地设置为40mm-120mm，例如本实施例中，第二柱体242的直径可设置为60mm，第一柱体241的直径可设置为90mm。
需要说明的是，本发明上述实施例所述的介质件和介质件设置孔的形状及装配方式是一种便于加工、安装和固定的优选实施方式，在实际应用中，介质件以及介质件设置孔的形状可以不限于此，例如，介质件可以被设置成单个柱体或者单个锥台或者柱体与锥台的组合或者多个锥台的组合，相应地，介质件设置孔可以被设置成单个柱体形状的孔或者单个锥台形状的孔或者柱体与锥台的组合的形状的孔或者多个锥台的组合的形状的孔，其中，所谓柱体包括圆柱和棱柱，所谓锥台包括圆锥台和棱锥台，所谓多个指的是两个以上。在实际应用中，谐振腔22的底壁上的多个介质件的形状无需彼此相同。进一步地，本发明实施例中的介质件可以由石英、陶瓷、表面涂覆有三氧化二钇的石英或者表面涂覆有三氧化二钇的陶瓷等材料制成。
还需要说明的是，当介质件和介质件设置孔为单个锥台状时，优选地，将该锥台的顶面的直径设置得大于底面的直径，从而可以借助于介质件的自重而将其更牢固地安装在介质件设置孔内。当介质件被设置成多个柱体的组合(例如图6A所示的两个柱体组合结构)时，多个柱体彼此同轴且逐级层叠设置，并且为了便于安装和拆卸该介质件，下一级柱体的直径不大于上一级柱体的直径。当介质件被设置成多个锥台的组合(例如图6B和图6C所示的两级锥台结构)时，多个锥台彼此同轴且逐级层叠设置，并且为了便于安装和拆卸该介质件，下一级锥台的顶面的直径不大于上一级锥台的底面的直径。当介质件被设置成柱体与锥 台的组合(例如图6D至图6G所示的柱体和锥台组合结构)时，柱体与锥台彼此同轴且逐级层叠设置，并且为了便于安装和拆卸该介质件，下一级柱体/锥台的顶面的直径不大于上一级柱体/锥台的底面的直径。其中，所谓“上一级”和“下一级”中的“上”和“下”并非依据位置关系中的“上”和“下”而定，而是依据装配时伸入介质件设置孔的先后顺序而定，具体地，先伸入介质件设置孔的那一级称为“下一级”，紧随所述“下一级”而伸入到介质件设置孔的那一级称为该“下一级”的上一级，也就是说，对于两级的而言，当从谐振腔的底壁的上方将介质件安装到介质件设置孔时，在位置关系上处于下面的那一级先伸入到介质件设置孔中，故而称为下一级，在位置关系上处于上面的那一级称为上一级；反之，当从谐振腔的底壁的下方将介质件安装到介质件设置孔时，在位置关系上处于上面的那一级先伸入到介质件设置孔中而被称为下一级，在位置关系上处于下面的那一级称为上一级。在实际应用中，可以根据需要设置级数。并且，为了更为方便、牢固地安装和固定介质件24，优选地，从谐振腔22的底壁的上方安装介质件24，以借助介质件24自身的重量将介质件24固定在谐振腔22的底壁上。
优选地，为了实现介质件与谐振腔的底壁二者之间的良好密封，而在二者之间设置诸如密封圈的密封件。下面结合图2和图5详细说明介质件24与谐振腔22的底壁二者之间的密封。
如图2和图5所示，在介质件设置孔26的沉孔261的下表面沿其周向开设有环形凹槽，其内设置有环形密封圈17，该环形凹槽和环形密封圈17沿介质件24的周向延伸形成环绕该介质件24的轴线的闭合环形结构。这样，在介质件24安装在介质件设置孔26内的情况下，借助谐振腔22内的气压和介质件24的自重，第一柱体241的下表面能够将环形密封圈17挤压变形，封堵住第一柱体241与沉孔261之间的缝隙，从而使谐振腔22的内部与真空腔室19的内部相隔绝。
需要说明的是，在实际应用中，对应于每一个介质件，在该介质件与谐振腔的底壁之间设置有密封件，该密封件沿介质件的周向延伸形成环绕该介质件轴线的闭合环形结构，并且沿该密封件的周向，该介质件和谐振腔始终与该密封件相接触，从而实现介质件与谐振腔底壁之间的密封。具体地，对于每一个介质件而言，可以在谐振腔的底壁上沿该介质件的周向开设密封圈安置槽，环形密封圈置于其中，从而沿该介质件的周向将该介质件套于其内，以此封堵介质件与谐振腔底壁之间的缝隙；或者，可以在介质件上沿其周向开设密封圈安置槽，环形密封圈置于其中，从而沿该介质件的周向将该介质件套于其内，以此封堵介质件与谐振腔底壁之间的缝隙；或者，也可以同时在谐振腔的底壁上沿该介质件的周向开设密封圈安置槽，以及在介质件上沿其周向开设密封圈安置槽，在各密封圈安置槽中均放置密封圈，从而沿该介质件的周向而将该介质件套于其内，以此封堵介质件与谐振腔底壁之间的缝隙。当然，也可以不开设密封圈安置槽，而是将密封圈直接放置在介质件与谐振腔底壁二者的接触面上，借助于介质件与谐振腔底壁之间的接触与挤压而实现密封圈的定位和密封，例如，环形密封圈套置在介质件上，且该介质件放置于谐振腔的底壁的介质件设置孔内，则同样可以实现密封圈的定位和密封；再如，将环形密封圈放置在图5所示的沉孔261的上表面，在介质件安置于该介质件设置孔内的情况下，通过介质件和沉孔261的上表面与该环形密封圈的接触与挤压而实现密封圈的定位和密封。
优选地，为了能够在较低的电压下实现放电，形成气体的初始电离，可以在谐振腔22内设置第二探针。下面结合图2和图3详细说明谐振腔22内的第二探针27。
如图2和图3所示，在谐振腔22的内部还包括第二探针27，其为金属材质，且数量和位置与介质件24的数量和位置相对应，具体地，第二探针27和介质件24的数量均为6个，每一个第二探针27对应一 个介质件24，且每一个第二探针27在其所对应的介质件24所在平面上的正投影与该介质件24在该平面上的正投影同轴。并且，第二探针27设置在谐振腔22的顶壁上并沿谐振腔22的轴向向下延伸，也就是说，第二探针27沿谐振腔22的轴向而设置在谐振腔22的顶壁与介质件24之间，且第二探针27的一端与谐振腔22的顶壁相连，另一端(下端)沿谐振腔22的轴向向下延伸，其延伸的程度可以直至与介质件24的上表面相接触(但不能挤压介质件24)。第二探针27不能挤压介质件24的原因在于：在激发等离子体的过程中，介质件24的温度会升高，导致其体积膨胀，若第二探针27原本就挤压介质件24，则会使得体积膨胀后的介质件24与第二探针27之间的压力过大而致使介质件24破碎。
由于谐振腔22的内部设置有第二探针27，因此在工艺时会有电场垂直于金属表面、磁场平行于金属表面的边界条件，这会改变谐振腔22内部的原有的场的分布，并激发高次模，使得第二探针27附近的电场增强，从而更容易在低气压条件下(例如毫托(mTorr)量级的放电气压)实现对气体的初始电离，因此本发明实施例提供的表面波等离子体设备能够在低放电气压下良好地工作。
进一步地，为了避免高功率下大气击穿，第二探针27在其所对应的介质件24所在平面上的正投影的边缘与该介质件24在该平面上的正投影的边缘之间的距离W不能过小，优选的，W大于或等于2cm。
需要说明的是，尽管本发明实施例中的第二探针27的数量和位置与介质件24的数量和位置相对应，但是本发明不局限于此，在实际应用中，第二探针27的数量也可以与介质件24不相对应；而且，第二探针27的设置位置也可以错开介质件24所在位置，例如，第二探针27可以设置在谐振腔22的顶壁上的与介质件24之间的间隙正对的位置处，和/或也可以设置在谐振腔22的底壁上的介质件24之间的间隙处。 进一步地，当第二探针27设置为多个时，其具体的设置数量和位置还可综合考虑到谐振腔22的尺寸、高度和形状来确定。
由上可知，本发明实施例提供的表面波等离子体设备能够产生大面积的等离子体，因而能够达到工业应用级；并且，在谐振腔内适当设置第二探针27的情况下，可以在极低气压下用较低功率实现初始电离，从而扩大了该表面波等离子体设备的工艺区间。
优选地，第二探针27在谐振腔22内的延伸长度可调。所谓延伸长度，指的是第二探针27的下端与谐振腔22的顶壁之间的距离。至于具体调节方式，可以参见下述第二实施例中的调节方式。
本发明第二实施例中的表面波等离子体设备与前述第一实施例提供的表面波等离子体设备的差别在于谐振腔的结构，至于微波发生装置、微波传输匹配结构、连接腔10和真空腔室19的结构及其作用，与前述结合第一实施例所描述的各相应结构及其作用相同，在此不再赘述。以下详细说明本实施例中的谐振腔。
请参阅图7，本实施例中，多个介质窗可以采用这样的方式设置形成：在谐振腔22的底壁44上开设有多个介质件设置孔441，在谐振腔22的底壁44和真空腔室19之间设置有呈板状结构的介质件(以下简称为介质板)45，该介质板45能够覆盖全部介质件设置孔441，即，借助于该介质板45，可以在每一个介质件设置孔441处形成介质窗。
具体地，本实施例中的谐振腔22设置在真空腔室19的顶部，其为空腔结构，采用诸如铜、铝、不锈钢或铝合金等的金属制作而成。该谐振腔22的顶壁设置有多个第二探针27，该第二探针27的沿谐振腔22的轴向延伸，其上端延伸在谐振腔22的顶壁的上方，其下端贯穿谐振腔22的顶壁而延伸至谐振腔22的内部，并且该第二探针27设置成可沿谐振腔22的轴向而相对于谐振腔22的底壁升降，即，第二探针27的下端与谐振腔22的底壁之间的间距可以调节、变化。该谐振腔22 的底壁44上设置有沿其厚度方向贯穿该底壁44的多个介质件设置孔441，多个介质件设置孔441的数量和位置与多个第二探针27的数量和位置一一对应。该底壁44用作天线板，以下称作天线板44。
在天线板44的下方设置有呈板状结构的介质件(以下简称为介质板)45，用于将微波能量耦合进入真空腔室19内，以在真空腔室19内激发产生等离子体。具体地，介质板45设置在天线板44与真空腔室19之间，且与真空腔室19密封连接，即，介质件45采用整体式结构，将天线板44与真空腔室19相互隔离，这样不仅可以将微波能量耦合进入真空腔室19内，而且还可以使谐振腔22与真空腔室19之间的界面均为介质材料，从而可以避免形成金属污染。该介质件45所采用的材料包括石英、陶瓷、表面涂覆有三氧化二钇的石英或者表面涂覆有三氧化二钇的陶瓷。优选的，介质件45的厚度的取值范围在5～80mm。
在进行工艺时，在谐振腔22内位于该第二探针27的附近形成高频电磁场，该高频电磁场的分布会影响在真空腔室19内形成的等离子体的密度分布。通过调节各个第二探针27的下端与天线板44之间的竖直间距，可以对高频电磁场的分布进行调节，从而可以实时调节在真空腔室19内形成的等离子体的密度分布，进而可以满足在不同的工艺条件下对等离子体分布的不同要求。此外，借助上述谐振腔22和介质窗，可以在极低的气压条件下，使用较低的功率就能够形成反应气体的初始电离，从而扩大了工艺区间。
下面对第二探针27的排布方式进行详细描述。
对于第一种排布方式，请一并参阅图8A至图8E，在天线板44所在平面上，多个第二探针27的投影分布在以天线板44所在平面的中心为圆心、且半径不同的两个同心圆周(内圈圆周和外圈圆周)上。如图8A所示，分布在内圈圆周上的第二探针27N有6个，分别为43N1～43N6；分布在外圈圆周上的第二探针27W有12个，分别为43W1～43W12。
第二探针27的下端与天线板44之间的竖直间距越大，则真空腔室19内与该第二探针27的位置相对应的区域形成的等离子体的密度分布越小；反之，第二探针27的下端与天线板44之间的竖直间距越小，则真空腔室19内与该第二探针27的位置相对应的区域形成的等离子体的密度分布越大。基于此，如图8B所示，分布在内圈圆周上的6个第二探针27N的下端与天线板44之间的竖直间距H1相同，分布在外圈圆周上的12个第二探针27W的下端与天线板44之间的竖直间距H2相同，且H1小于H2，例如，H1＝10mm；H2＝40mm。在这种情况下，由于H1小于H2，则分布在支撑台21上方的等离子体，其在与分布在内圈圆周上的6个第二探针27N相对应的区域分布的密度大于分布在外圈圆周上的12个第二探针27W相对应的区域分布的密度，如图8D所示，从而实现了等离子体的密度分布的调节。
如图8C所示，分布在内圈圆周上的6个第二探针27N的下端与天线板44之间的竖直间距H4相同，分布在外圈圆周上的12个第二探针27W的下端与天线板44之间的竖直间距H3相同，且H3小于H4，例如，H3＝10mm；H4＝30mm。在这种情况下，由于H3小于H4，则分布在支撑台21上方的等离子体，其在与分布在外圈圆周上的12个第二探针27W相对应的区域分布的密度大于分布在内圈圆周上的6个第二探针27N相对应的区域分布的密度，如图8E所示，从而实现了等离子体的密度分布的调节。
当然，在实际应用中，也可以根据具体情况将同一圆周上的第二探针的下端与天线板之间的竖直间距设定为不相同，以满足在不同的工艺条件下对等离子体分布的不同要求。
需要说明的是，在本实施例中，在天线板44所在平面上，多个第二探针27的投影分布在以天线板44所在平面的中心为圆心、且半径不同的两个同心圆(内圈圆周和外圈圆周)上；但是，本发明并不局限于 此，在实际应用中，同心圆的数量还可以为三个以上。
在实际应用中，可以采用升降机构对上述第二探针27的升降运动进行远程自动调节，或者，也可以采用手动方式对上述第二探针27的升降运动进行调节。具体地，在远程自动调节的方式中，谐振腔22还包括多个升降机构(图中未示出)，该升降机构的数量与圆周的数量相对应，各个升降机构用于一一对应地驱动各个圆周上的所有第二探针同步上升或同步下降，即，对应于本实施例的两个同心圆的情况，升降机构为两个，其中一个用于同步驱动内圈圆周上的所有第二探针27N；其中另一个用于同步驱动外圈圆周上的所有第二探针27W。或者，升降机构的数量还可以与第二探针的数量相对应，每个升降机构用于一一对应地驱动其中一个第二探针上升或下降。也就是说，升降机构的数量为18个，每个升降机构用于单独驱动相应的一个第二探针上升或下降。在实际应用中，升降机构可以为升降电机、升降气缸或者升降液压缸等具有升降驱动功能的机构。
在手动调节方式中，每个第二探针具有外螺纹，且在谐振腔22的顶壁腔壁421上设置有贯穿其厚度的螺纹孔，各个第二探针27通过其外螺纹一一对应地安装在各个螺纹孔中。通过手动顺时针或逆时针旋转任意一个第二探针27，来调节该第二探针的下端与天线板44之间的竖直间距。当然，在此基础上，也可以采用自动调节的方式代替该手动调节的方式，即，采用诸如旋转电机等的驱动机构自动驱动任意一个第二探针27顺时针或逆时针旋转，从而实现对第二探针27的下端与天线板44之间的竖直间距的调节。
对于第二种排布方式，请一并参阅图9A至图9C，天线板44所在平面上，多个第二探针27的投影分布在以天线板44所在平面的中心为圆心的一个圆周上。如图9A所示，分布在该圆周上的第二探针27D有5个，分别为43D1～43D5。
如图9B所示，分布在该圆周上的5个第二探针27D的下端与天线板44之间的竖直间距H5相同，例如，H5＝20mm。
如图9C所示，分布在该圆周上的5个第二探针27D的下端与天线板44之间的竖直间距H5不相同，其中一个第二探针27D的下端与天线板44之间的竖直间距H7大于其余第二探针27D的下端与天线板44之间的竖直间距H6，例如，H6＝20mm；H7＝40mm。在这种情况下，在支撑台21上方的等离子体，其分布在与竖直间距为H7的其中一个第二探针27D相对应的区域分布的密度小于分布在与竖直间距为H6的其余第二探针27D相对应的区域分布的密度，从而实现了等离子体的密度分布的调节。
在实际应用中，可以采用升降机构对上述第二探针27的升降运动进行远程自动调节，或者，也可以采用手动方式对上述第二探针27的升降运动进行调节。该升降机构与上述第一种排布方式中的升降机构相类似，其区别仅在于，升降机构还可以为一个，用以驱动所有的第二探针同步上升或下降。手动调节方式与上述第一种排布方式中的手动调节方式相同，在此不再赘述。
优选的，第二探针27的下端与天线板44之间的竖直间距不小于10mm，以避免在高功率的条件下发生大气击穿的情况。
进一步优选的，谐振腔22在竖直方向上的长度的取值范围在10～200mm，以给第二探针27的升降运动预留足够的空间。
在实际应用中，天线板44上的介质件设置孔441可以为圆孔，该圆孔的直径的取值范围在20～120mm，优选在40～120mm；或者，天线板44上的介质件设置孔441还可以为正方形孔，该正方形孔的边长的取值范围在20～120mm，优选在40～120mm。或者，天线板44上的介质件设置孔还可以为其他任意形状的通孔。
需要说明的是，在实际应用中，多个介质窗可以采用这样的方式设 置形成：在谐振腔的底壁上开设有多个介质件设置孔，在谐振腔的底壁和真空腔室之间设置有介质件，介质件包括安装板以及内嵌在该安装板中的多个介质块，每个介质块均沿安装板的厚度方向贯穿该安装板，且多个介质块的数量和设置位置与多个介质件设置孔的数量和位置一一对应，借助于每个介质件可以在其所对应的介质件设置孔处形成介质窗。其中，介质块包括被加工成固定形状而能够嵌置在介质件设置孔中的独立结构件，也包括可以填充在介质件设置孔中的由前述介质材料制成的颗粒、粉末或片材。
下面结合图10详细说明本发明第三实施例提供的表面波等离子体设备。
本发明第三实施例中的表面波等离子体设备与前述第一实施例提供的表面波等离子体设备的差别在于：本实施例省去连接在矩形波导8和谐振腔22之间的连接腔，而是将谐振腔22的上表面直接叠置于矩形波导8的下表面，并使矩形波导8底壁所开设的微波出口与谐振腔22顶壁所开设的微波入口对准并在二者的连接处进行密封，而使矩形波导8和谐振腔22密闭连通。螺钉探针23自矩形波导8直接伸入谐振腔22内。至于本实施例中的表面波等离子体设备的其他结构及其作用，与前述结合第一实施例所描述的各相应结构及其作用相同，在此不再赘述。
下面结合图11详细说明本发明第四实施例提供的表面波等离子体设备。
本发明第四实施例中的表面波等离子体设备与前述第一实施例中的表面波等离子体设备类似，二者差别在于：本实施例中，省去螺钉探针23和连接在矩形波导8和谐振腔22之间的连接腔，并且矩形波导8的微波出口不是设置在其中段区域而是在其终端，即，矩形波导8的终端具有微波出口，该微波出口与谐振腔的微波入口对准并在二者的连接处进行密封，而使矩形波导8和谐振腔22密闭连通。并且，矩形波导 8的终端的轴线与其起始端的轴线之间存在大于0度但小于180度的倾角，从而使微波沿着矩形波导传输时能够改变传输方向而到达其终端并进入到谐振腔22中。为此，可以省去用于改变微波传输方向的螺钉探针23。至于本实施例中的表面波等离子体设备的其他结构及其作用，与前述结合第一实施例所描述的各相应结构及其作用相同，在此不再赘述。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (25)

  1. 一种表面波等离子体设备，包括依次连接的微波发生装置、微波传输匹配结构和真空腔室，其中，所述微波传输匹配结构包括矩形波导，用于传输所述微波发生装置产生的微波，其特征在于，所述设备还包括谐振腔，其设置在所述矩形波导和所述真空腔室之间，并与所述矩形波导密闭连通以及与所述真空腔室密封连接，且所述谐振腔的底壁设置有多个介质窗，所述多个介质窗在所述真空腔室的底面所在平面中的正投影落入所述真空腔室的内壁在该平面的正投影所限定的范围内，以分别将微波能量耦合进入所述真空腔室。
  2. 如权利要求1所述的表面波等离子体设备，其特征在于，所述矩形波导的终端与所述谐振腔密闭连通。
  3. 如权利要求1所述的表面波等离子体设备，其特征在于，所述矩形波导的中段区域与所述谐振腔密闭连通。
  4. 如权利要求1所述的表面波等离子体设备，其特征在于，所述多个介质窗沿所述真空腔室的周向均匀分布。
  5. 如权利要求1-4中的任一项所述的表面波等离子体设备，其特征在于，所述多个介质窗采用这样的方式设置而成：在所述谐振腔的底壁上开设有多个介质件设置孔，在每一个所述介质件设置孔中嵌置有形状与之相匹配的介质件。
  6. 如权利要求5所述的表面波等离子体设备，其特征在于，每一个所述介质件的形状为下述形状之一：柱体、锥台、多个柱体的组合、多个锥台 的组合、柱体与锥台的组合。
  7. 如权利要求6所述的表面波等离子体设备，其特征在于，所述介质件的形状为多个柱体的组合时，所述多个柱体彼此同轴且逐级层叠设置，并且下一级柱体的直径不大于上一级柱体的直径；或者
    所述介质件的形状为多个锥台的组合时，所述多个锥台彼此同轴且逐级层叠设置，并且下一级锥台的顶面的直径不大于上一级锥台的底面的直径；或者
    所述介质件的形状为柱体与锥台的组合时，所述柱体与锥台彼此同轴且逐级层叠设置，并且下一级柱体/锥台的顶面的直径不大于上一级柱体/锥台的底面的直径。
  8. 如权利要求1-4中的任一项所述的表面波等离子体设备，其特征在于，所述多个介质窗采用这样的方式设置而成：
    在所述谐振腔的底壁上开设有多个介质件设置孔，在所述谐振腔的底壁和所述真空腔室之间设置有介质件，所述介质件被设置成板状结构且能够覆盖所述多个介质件设置孔；或者
    在所述谐振腔的底壁上开设有多个介质件设置孔，在所述谐振腔的底壁和所述真空腔室之间设置有介质件，所述介质件包括安装板以及内嵌在所述安装板中的多个介质块，每个所述介质块均沿所述安装板的厚度方向贯穿所述安装板，且所述多个介质块的数量和设置位置与所述多个介质件设置孔的数量和位置一一对应。
  9. 如权利要求5所述的表面波等离子体设备，其特征在于，所述介质件的厚度的取值范围在5～80mm。
  10. 如权利要求5所述的表面波等离子体设备，其特征在于，所述介质 件最小直径的取值范围为40mm-120mm。
  11. 如权利要求3所述的表面波等离子体设备，其特征在于，还包括第一探针，其设置在所述矩形波导的中段区域，且其一端延伸至所述谐振腔内，用于将所述矩形波导中的微波引入到所述谐振腔内。
  12. 如权利要求11所述的表面波等离子体设备，其特征在于，所述第一探针的另一端沿着背离所述谐振腔的方向延伸至所述矩形波导的外部。
  13. 如权利要求11所述的表面波等离子体设备，其特征在于，所述第一探针采用螺接或卡接或销接的方式进行固定。
  14. 如权利要求11-13中的任一项所述的表面波等离子体设备，其特征在于，还包括连接腔，其设置在所述矩形波导的微波出口和所述谐振腔的微波入口之间，并与二者密封连接，所述第一探针的一端贯穿所述连接腔并延伸至所述谐振腔内。
  15. 如权利要求3所述的表面波等离子体设备，其特征在于，还包括短路活塞，其设置在所述矩形波导的后段区域，并能沿所述矩形波导的轴线与之做相对运动，以调节所述矩形波导有效通路的长度。
  16. 如权利要求1所述的表面波等离子体设备，其特征在于，还包括沿谐振腔的轴向延伸的第二探针，其上端固定在所述谐振腔的顶壁上或者贯穿所述谐振腔的顶壁而延伸至所述谐振腔的上方，其下端位于所述谐振腔的内部。
  17. 如权利要求16所述的表面波等离子体设备，其特征在于，所述第 二探针被设置成能沿所述谐振腔的轴向相对于所述谐振腔的底壁升降。
  18. 如权利要求17所述的表面波等离子体设备，其特征在于，所述第二探针的设置位置与所述介质窗相对应。
  19. 如权利要求18所述的表面波等离子体设备，其特征在于，所述第二探针的数量和位置与所述介质窗的数量和位置相对应，且所述第二探针在与其相对应的所述介质件上的正投影与该介质件同轴。
  20. 如权利要求18所述的表面波等离子体设备，其特征在于，所述第二探针在与其相对应的介质件上的正投影的边缘与该介质件的边缘之间的距离不小于2cm。
  21. 如权利要求16-20中的任一项所述的表面波等离子体设备，其特征在于，在所述第二探针为多个的情况下，所述多个第二探针在所述真空腔室的底面的投影分布在以所述真空腔室的底面的中心为圆心且半径不同的多个同心圆的圆周上；或者
    在所述第二探针为多个的情况下，所述多个第二探针在所述真空腔室的底面的投影分布在以所述真空腔室的底面的中心为圆心的一个圆周上。
  22. 如权利要求21所述的表面波等离子体设备，其特征在于，所述谐振腔还包括升降机构，所述升降机构的数量与所述圆周的数量相对应，每个所述升降机构用于对应地驱动位于同一个圆周上的所有第二探针同步上升或同步下降；或者
    所述升降机构的数量与所述第二探针的数量相对应，每个所述升降机构对应于一个所述第二探针且用以驱动该第二探针上升或下降。
  23. 如权利要求21所述的表面波等离子体设备，其特征在于，至少在每个所述第二探针的上部区域设置有外螺纹，在所述谐振腔的顶壁上的设置所述第二探针的位置处开设与所述外螺纹相配合的螺纹孔，所述螺纹孔为通孔或盲孔，所述第二探针一一对应地安装在所述螺纹孔中，通过顺时针或逆时针旋转所述第二探针，实现该第二探针相对于所述谐振腔的底壁的升降。
  24. 如权利要求22或23所述的表面波等离子体设备，其特征在于，所述第二探针的下端与所述谐振腔的底壁之间的竖直间距不小于10mm。
  25. 如权利要求1所述的表面波等离子体设备，其特征在于，所述谐振腔的高度为10mm～200mm。
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CN111128664B (zh) * 2018-11-01 2022-05-27 北京北方华创微电子装备有限公司 谐振腔结构和半导体处理设备
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