WO2017135332A1 - 超小型加速器および超小型質量分析装置および超小型イオン注入装置 - Google Patents

超小型加速器および超小型質量分析装置および超小型イオン注入装置 Download PDF

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WO2017135332A1
WO2017135332A1 PCT/JP2017/003678 JP2017003678W WO2017135332A1 WO 2017135332 A1 WO2017135332 A1 WO 2017135332A1 JP 2017003678 W JP2017003678 W JP 2017003678W WO 2017135332 A1 WO2017135332 A1 WO 2017135332A1
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substrate
chamber
ion
ions
electrode
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French (fr)
Japanese (ja)
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俊 保坂
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H13/00—Magnetic resonance accelerators; Cyclotrons
    • H05H13/04—Synchrotrons
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H9/00—Linear accelerators

Definitions

  • the present invention relates to an acceleration device using an accelerator and a method for manufacturing the same.
  • the present invention relates to a synchrotron, a microtron, a linear accelerator, a mass spectrometer, and an ion implantation apparatus.
  • Accelerators can be used to make protons collide to know the formation of materials, to form fine patterns using synchrotron radiation generated when bending accelerated particle trajectories, or to ion ions on the surface of semiconductors. Used to treat human diseases, such as implanting ions to perform active layer and surface modification, mass analysis of ions emitted from substances to investigate the composition and structure of substances, and implanting and destroying charged cells in cancer cells It is used in various fields such as.
  • the movement of accelerated particles requires ultra-vacuum (10 ⁇ 3 to 10 ⁇ 6 torr or less), and high-speed accelerated particles require a considerably large cavity (for example, 500 mm or more), of which
  • an electric field generator or a magnetic field generator that generates a large electric field or a large magnetic field is required.
  • an electrostatic lens is used to accelerate charged particles, but several electrostatic lenses (acceleration electrodes) must be exactly parallel and the holes through which the charged particles pass must be precisely aligned. Electrodes (for example, a hole size of 20 mm or more and an electrode size of 300 mm or more) are required, and they must be placed in an ultra-vacuum cavity.
  • the vacuum system becomes large, and it is necessary to use a vacuum pump that is quite large and has good performance.
  • the magnetic field generator cannot be made large enough to enter the cavity (vacuum line), and there is also a side wall surrounding the cavity, the distance to the target charged particle is increased (for example, Therefore, a large magnetic field generator is required. Even if such a large magnetic field generator is reduced by using an electromagnet of a superconducting material, the size of the entire magnetic field generator is hardly changed because the cooling system becomes large.
  • the present invention is an ultra-compact, lightweight, portable, mass spectrometer that can be easily and quickly measured in the field, an accelerator that generates charged particles (electrons, protons, ions) accelerated to near the speed of light, and high-speed ions.
  • An ion implanter for implanting a material is provided.
  • the present invention has the following features. (1)
  • the present invention provides an ion comprising a plurality of substrates including a first main substrate, a first upper substrate attached to the upper surface of the first main substrate, and a first lower substrate attached to the lower surface of the first main substrate.
  • the ion implantation apparatus includes a plurality of through chambers, the plurality of through chambers generating an ion, an ion extraction / acceleration chamber for extracting ions generated in the ionization chamber and accelerating to a predetermined speed, and the ions Ion mass separation chamber for selectively separating ions accelerated in the extraction / acceleration chamber as ions having a desired mass / charge ratio, and an ion acceleration chamber for accelerating ions separated from the ion mass separation chamber to a predetermined speed
  • scanning the ions are accelerated by the ion acceleration chamber, characterized in that it comprises an ion scanning and exit chamber for emitting ions to the outside of the ion implanter.
  • the ion acceleration chamber is a linear through chamber, and a plurality of rectangular parallelepiped electrodes (ion acceleration chamber rectangular electrodes) having a central hole in the through chamber.
  • the central hole is substantially parallel to the surface of the first main substrate and is also substantially parallel to the traveling direction of the charged particles, and the central hole is disposed substantially at the center of the through chamber,
  • the ion acceleration chamber is characterized by accelerating ions by applying a high-frequency voltage or a DC voltage to the rectangular parallelepiped electrode.
  • the ion acceleration chamber includes two linear through-holes and two circular-shaped electrodes.
  • a plurality of rectangular parallelepiped electrodes (ion acceleration chamber rectangular parallelepiped-shaped electrodes) having a central hole in the through-hole, and the central hole is a first through-hole connected to a through-hole.
  • the central hole is substantially parallel to the surface and is also substantially parallel to the traveling direction of the charged particles, the central hole is disposed at the substantially center of the through chamber, and is a passage for the charged particles.
  • the ion is accelerated by applying a DC voltage
  • the circular through-hole is ionized in a circular shape by an electric field applied between electrodes formed on both side wall surfaces of the circular through-hole.
  • the ion acceleration chamber rectangular parallelepiped electrode is a substrate side wall electrode integrated with the first main substrate, or an electrode supported by a support column.
  • the ion mass separation chamber is a circular through chamber, and ions are bent into a circular shape by an electric field applied between electrodes formed on side wall surfaces on both sides of the circular through chamber, or the circular through chamber is The ions are bent in a circular shape by a magnetic field generated by an electromagnet disposed outside the first upper substrate attached to the upper portion of the substrate and an electromagnet disposed outside the first lower substrate attached to the lower portion of the circular through chamber.
  • the ion scanning / exiting chamber has an electric field applied to electrodes formed on the two side surfaces of the through chamber and first and second surfaces attached to the upper and lower surfaces of the through chamber.
  • 1 Upper substrate and 1st substrate The ions are scanned in the lateral direction (side direction of the through chamber) and the vertical direction (up and down direction of the through chamber) by an electric field applied to the formed electrode, and a plurality of the ion acceleration chambers are arranged. It has an annular shape, and a plurality of annularly shaped ion acceleration chambers are sequentially arranged outside the smallest ion acceleration chamber.
  • the ion implantation apparatus, accelerator, and mass spectrometer of the present invention are produced by a 3D printer.
  • functions necessary for an acceleration device and a mass spectrometer are formed in a substrate at once using an LSI or a MEMS process, so that the positional relationship between the functional parts (for example, acceleration electrodes) is extremely high. Accurately formed.
  • the distance between the electrodes and the passage through which the charged particles pass can be precisely formed in the order of mm or ⁇ m, the size becomes extremely small. For example, as the distance between the electrodes decreases, the electric field strength increases, and acceleration and deceleration of charged particles can be controlled efficiently.
  • the frequency of the high frequency supplied to the electrode can be increased, greater acceleration can be performed over a short distance.
  • each functional component can be manufactured at once, the manufacturing cost is dramatically reduced.
  • the present invention When the present invention is applied to an ion implantation apparatus, it is 4 inches to 8 inches as in the present invention (diameter 100 mm to 200 mm, thickness 3 mm or less (Si substrate 2 mm, glass substrate 0.3 mm ⁇ 2), 8 inches or more possible) It has not been reported that a micro sample supply unit, ionization chamber, extraction electrode / acceleration chamber, mass separation chamber (electric field chamber, magnetic field chamber), ion acceleration chamber, and ion scanning / extraction chamber were produced using a substrate. .
  • the ion implantation apparatus of the present invention is ultra-compact ⁇ main body: size 6 inch wafer (50 cm 3 ) or less, weight 130 g or less ⁇ , and is a batch production, so the manufacturing cost is 100,000 yen or less ⁇ main body: size 6 inch wafer ⁇ Can be realized. If the conventional product has the same performance, it is 2 m ⁇ 2 m ⁇ 2 m or more and 2 tons or more, so it is extremely small and light.
  • FIG. 1 is a diagram showing a basic structure of the present invention using a substrate.
  • FIG. 2 is a diagram showing a synchrotron type micro accelerator according to the present invention.
  • FIG. 3 is a diagram showing a schematic diagram when a circular accelerator is divided and manufactured on a substrate.
  • FIG. 4 shows an example of the charged particle generator shown in FIG. 2, which is an ion generator having parallel plate electrodes.
  • FIG. 5 is a diagram showing a linear acceleration chamber.
  • FIG. 6 is a diagram illustrating an example of a charged particle acceleration tube using a high-frequency waveguide.
  • FIG. 7 is a view showing a quadrupole electromagnet having a role of a converging electromagnet manufactured using the coil (electromagnet) of the present invention.
  • FIG. 1 is a diagram showing a basic structure of the present invention using a substrate.
  • FIG. 2 is a diagram showing a synchrotron type micro accelerator according to the present invention.
  • FIG. 3 is a diagram showing
  • FIG. 8 is a diagram showing a charged particle passage cavity such as a deflection electromagnet in FIG. 2 and an electromagnet disposed therein.
  • FIG. 9 is a diagram illustrating a method of making a long linear accelerator.
  • FIG. 10 is a diagram showing an embodiment in which the circular or linear accelerator of the present invention is applied to a medical micro accelerator.
  • FIG. 11 is a diagram showing a cross-sectional view (perpendicular to the substrate surface) of the mass spectrometer using a Si substrate or the like with glass substrates attached to the upper and lower surfaces.
  • FIG. 12 is a diagram for explaining the electron ionization method.
  • FIG. 13 is a diagram illustrating a double-focusing mass spectrometer and a detection unit.
  • FIG. 14 is a conceptual diagram of a completed drawing of the final product (main body only) of the present invention.
  • FIG. 15 is a diagram showing a method or apparatus for forming a pattern on a substrate through hole or a sidewall of a substrate recess.
  • FIG. 16 is a view showing a through-hole side wall etching apparatus.
  • FIG. 17 is a diagram showing a method for producing a penetration chamber of an accelerator or a mass spectrometer of the present invention using a mold.
  • FIG. 18 is a view showing an exposure apparatus in which light emitters are arranged on the front and rear surfaces.
  • FIG. 19 is a diagram illustrating a method of forming a central hole using a mold ingot method.
  • FIG. 15 is a diagram showing a method or apparatus for forming a pattern on a substrate through hole or a sidewall of a substrate recess.
  • FIG. 16 is a view showing a through-hole side wall etching apparatus.
  • FIG. 17 is
  • FIG. 20 is a diagram illustrating a method of forming the central hole in the substrate cut at a position approximately half the height of the central hole of the portion where the central hole is formed.
  • FIG. 21 is a diagram ((b), (c)) illustrating a method ((a)) for polishing the through-walls to make a smooth and smooth surface and a method for transferring a pattern to the through-walls. is there.
  • FIG. 22 is a plan view of the annular substrate ion implantation apparatus of the present invention viewed in parallel to the substrate surface.
  • FIG. 23 is a diagram (plan view) showing an annular ion implantation apparatus having two annular trajectories.
  • FIG. 24 is an enlarged view (plan view parallel to the substrate) of the connection region between the ion emission line and the second-stage annular track.
  • FIG. 25 is a view showing a cross section of the orbit coupling portion of the ion implantation apparatus stacked in two stages.
  • FIG. 26 is a diagram illustrating an example of an RFQ linear accelerator.
  • FIG. 27 is a diagram showing a method of manufacturing the RFQ linear accelerator shown in FIG.
  • FIG. 28 is a diagram illustrating another acceleration method (IH type) of the linear accelerator.
  • FIG. 29 is a diagram illustrating an acceleration method in another linear acceleration chamber.
  • FIG. 30 is a diagram showing the structure of a charged particle linear accelerator.
  • the present invention relates to various devices in which a cavity is formed in a substrate and charged particles travel in the cavity, for example, a circular accelerator such as a synchrotron, a cyclotron, and a microtron, a linear accelerator in which charged particles linearly travel, an ion An injection accelerator and a mass spectrometer.
  • a circular accelerator such as a synchrotron, a cyclotron, and a microtron
  • a linear accelerator in which charged particles linearly travel an ion An injection accelerator and a mass spectrometer.
  • a plurality of through holes 5002 5002-1, 2, 3,...) (Holes penetrating almost vertically from the upper surface to the lower surface of the substrate, (It is also referred to as a through chamber because a groove and several chambers are produced) (width w1, length a1, height t1).
  • FIG. 1 is a diagram showing the structure of the present invention formed in a substrate
  • FIG. 1 (a) is a plan view parallel to the substrate surface
  • FIG. 1 (b) is a sectional view perpendicular to the substrate surface
  • 1 (c) and 1 (d) are cross-sectional views perpendicular to the substrate surface of the through chamber (longitudinal direction (traveling direction of charged particle beam)).
  • Direction ).
  • a large number of through-chambers 5002 and a central hole 5003 are formed in the substrate, and although drawn linearly in the figure, there are cases where they are curved.
  • an upper substrate 5006 and a lower substrate 5007 are attached to the upper and lower surfaces of a substrate (referred to as a main substrate) 5001, and the through chamber 5002 has an external environment except for a central hole 5003 to be connected. It is an airtight space.
  • a gas or high-frequency introduction hole / lead-out hole formed in the upper substrate 5006 or the lower substrate 5007 or a vacuuming hole is formed.
  • FIG. 1C is a head of the through chamber 5002 in FIG. 1B viewed in a cross section in the A1-A2 direction, and has a height t1 (the thickness of the main substrate 5001) and a through chamber (cavity) having a width w1.
  • the upper part of the through chamber 5002 is surrounded by the upper substrate 5006, the lower part is surrounded by the lower substrate 5007, and both side surfaces are surrounded by the side surfaces of the main substrate, and the cross-sectional shape thereof is substantially rectangular (rectangular or square). That is, the side surface of the main substrate of the through chamber 5002 in the main substrate is preferably substantially perpendicular to the main substrate surface.
  • FIG. 1D is a view of the central hole 5003 in FIG. 1B in a cross section in the A3-A4 direction, and a hole having a height t2 and a width w2 is formed in the central portion of the main substrate 5001.
  • the side surface 5004 of the through chamber 5002 is indicated by a dotted line so that the positional relationship with the through chamber 5002 can be understood. That is, the central hole 5003 is vacant in the central portion of the through chamber 5002. (When penetrating chamber 5002 and central hole 5003 are connected linearly) When penetrating chamber 5002 and central hole 5003 are curved and bent, central hole 5003 is formed in the central portion of the cavity on the extension of penetrating chamber 5002. You can think of it as vacant.
  • the central hole 5003 is formed in a rectangular shape in FIG. 1, but may be circular or trapezoidal. Alternatively, since the central hole 5003 is formed by etching or laser, it may have a substantially circular shape, a substantially trapezoidal shape, a substantially elliptical shape, or other shapes.
  • the central hole 5003 is a hole formed in the main substrate 5001 and does not completely penetrate the main substrate 5001. When the portion of the main substrate 5001 in which the central hole 5003 is formed is a substrate side wall 5005, the central hole 5003 is a hole formed in the central portion of the substrate side wall 5005.
  • An electrode can be formed on the side surface 5004 of the main substrate 5001 surrounding the through chamber 5002, and the voltage and position of the charged particles can be controlled by applying a voltage to the electrode from the outer electrodes formed on the upper and lower substrates.
  • electrodes can be formed on the lower surface of the upper substrate 5006 and the upper surface of the lower substrate 5007 surrounding the through chamber 5002, and a voltage is applied to the electrodes from the outer electrodes formed on the upper and lower substrates to Can control position and speed.
  • An electrode can also be produced in the central hole 5003, and the position and speed of the charged particles can be controlled by applying a voltage to the electrode from the outer electrodes formed on the upper and lower substrates.
  • the material of the main substrate 5001 is glass, quartz, sapphire, diamond, various plastics, various ceramics, insulators such as composites and bonded bodies thereof, Si, Ge, GaAs, InP, GaN, various binary / ternary elements.
  • a semiconductor such as a multi-element semiconductor, a composite or a bonded body thereof, a metal such as Al, Cu, Ni, Ti, or Fe, an alloy, or a conductor such as a composite or bonded body thereof.
  • the upper and lower substrates 5006 and 5007 are preferably made of an insulator such as glass, quartz, sapphire, diamond, various plastics, polymers, various ceramics, a composite or a bonded body thereof.
  • the main substrate 5001 and the upper and lower substrates 5006 and 5007 are 50 mm to 1000 mm circular substrates or rectangular substrates, but may be larger than 1000 mm depending on the size of the exposure apparatus, etching apparatus, and various film forming apparatuses. .
  • the thickness t1 of the main substrate 5001 determines the height (depth) of the through chamber 5002. Basically, it is sufficient if the size allows charged particles to pass through, but it is usually 0.1 mm to 2.0 mm. Depending on the fluctuation (fluctuation) of the movement of the charged particles, it may be 2.0 mm or more, and is 2.0 mm to 10 mm, alternatively 10 mm to 50 mm, alternatively 50 mm to 100 mm.
  • the through chamber When a through chamber having a large depth is manufactured, the through chamber can be formed on a substrate having a small thickness and then stacked. LSI processes and MEMS processes can be used for the through chambers, electrodes, various thin films (conductor films, insulator films), and the like. Alternatively, laser processing or punching can be used. Alternatively, the product of the present invention can be manufactured by using a 3D printer device to form a substrate including a through-hole and a central hole by laminating and sequentially laminating and laminating thin films while patterning. Alternatively, there is also a method in which a deep penetration chamber is made of an ingot body and the ingot is cut at a predetermined thickness.
  • the thicknesses t3 and t4 of the upper and lower substrates 5006 and 5007 may be any thickness that can maintain the vacuum in the through chamber and maintain the strength of the acceleration device of the present invention, and is usually 0.1 mm to 1 mm, or 1 mm to 3 mm. However, it may be thicker than 3 mm to give strength.
  • the width w1 of the through chamber 5002 depends on the thickness t1 of the main substrate 5001, it may be about the same width as t1, but may be smaller or larger than t1 depending on the charged particle control method.
  • the sizes t2 and w2 of the central hole 5003 are smaller than the size of the through chamber 5002, but are usually 10 ⁇ m to 100 ⁇ m, or 100 ⁇ m to 500 ⁇ m. When the penetration chamber 5002 is large, it may be 500 ⁇ m or more.
  • the length a1 of the through chamber 5002 can be any length depending on the function of the through chamber. For example, a1 is 0.1 mm to 10 mm, or 10 mm to 50 mm, or 50 mm to 500 mm.
  • the length b1 of the central hole 5003 can also take any length depending on its function.
  • b1 is 0.001 mm to 10 mm, or 10 mm to 50 mm, or 50 mm to 500 mm. Since the central hole also has the purpose of separating the through chambers, the central hole (the substrate side wall having the central hole) may not be provided if it is not necessary to separate the through holes.
  • the basic principle of the present invention is as follows. Insulating substrates such as sapphire, glass and quartz (4 inch wafer or more, also referred to as main substrate), or insulating substrates such as glass and quartz substrates (also referred to as upper and lower substrates) attached to the upper and lower surfaces of a semiconductor substrate such as Si or GaAs Then, a plurality of through chambers are formed in the main substrate. Adjacent through chambers are partitioned by a substrate side wall plate having a central hole (a horizontal groove parallel to the substrate surface is formed at the center). There are various methods for forming the through-hole having the central hole.
  • the main substrate is divided into upper and lower parts in the vicinity of the center of the central hole to form a half of the central hole and a half of the through-hole, and the upper and lower sides are formed. Can be made to adhere at the central hole. That is, it is a collective substrate type apparatus.
  • an accelerator is fabricated on a substrate. A cavity through which charged particles such as an acceleration cavity pass, an electrode that generates an electric field that accelerates, decelerates, or deflects charged particles, and a magnetic field that accelerates, decelerates, or deflects charged particles.
  • the coil and electromagnet to be generated are mounted.
  • FIG. 2 (a) is a diagram showing a synchrotron type micro accelerator according to the present invention.
  • the micro accelerator is mounted on one substrate 9, and includes a charged particle generator 11, a linear accelerator (incident side). 13. Various electromagnet arrangement parts 15, 17, 19, 21, 22, 23, 26, 28, 31, 32, 35, 36, deflection electromagnet arrangement parts 25, 30, 34, 37, cavities 12, 14 through which charged particles pass 16, 16, 20, 24, 27, 33, 38, 40, a high-frequency acceleration cavity 29, and a linear accelerator (outgoing side) 39.
  • the charged particles generated by the charged particle generator 11 are accelerated by the linear accelerator 13 through the cavity 12, deflected by the deflecting electromagnet 15 through the cavity 14, and further deflected by the deflecting electromagnet 17 through the cavity 16.
  • a linear accelerator 42 may be provided in the middle of the cavity 20 to adjust the speed of charged particles entering the inflector 21.
  • the charged particles incident on the storage ring 24 of the circular accelerator 8 from the inflector 21 are converged by a converging electromagnet 22 (for horizontal direction) and a converging electromagnet 23 (for vertical direction), deflected and accelerated by a deflecting electromagnet 25, and It enters the storage ring 27, where it is further accelerated by the high-frequency acceleration cavity 29, converged by the converging electromagnet 26 (for the vertical direction) and converging electromagnet 28 (for the horizontal direction), deflected and accelerated by the deflecting electromagnet 30, and the next accumulation It enters the ring 33, and again converges with the converging electromagnet 31 (for the vertical direction) and the converging electromagnet 32 (for the horizontal direction), deflects and accelerates with the deflection electromagnet 34, and enters the next storage ring 38, again (in the vertical direction) For convergence) by a converging electromagnet 35 and a converging electromagnet 36 (for horizontal direction), deflecte
  • FIG. 2B is a diagram in which the micro accelerator 10-1 having the circular accelerator (for example, synchrotron) 8-1 shown in FIG. 2A is connected to a circular accelerator 8-2 that is one turn larger. It is a figure which shows a double synchrotron (or 2 cycle synchrotron).
  • a second synchrotron 8-2 surrounds the first small micro accelerator 10-1. These are collectively referred to as a micro accelerator 10-2.
  • the outlet 41-1 (41 in FIG. 2 (a)) of the first small micro accelerator 10-1 (which may be considered the same as that shown in FIG. 2 (a))
  • the large synchrotron outlet 41 (which is marked with "-1" to distinguish it from 41-2) is connected to the inflector 21-2 of the second synchrotron 8-2. That is, the charged particles that have exited the outlet 41-1 of the first small synchrotron 8-1 enter the storage ring 24-2 that is a cavity through which charged particles pass in the circular accelerator 8 via the inflector 21-2. Incident.
  • a linear accelerator 39-1 is provided in the middle of the cavity exiting the circular accelerator 8, and the speed of charged particles entering the inflector 21-2 can be adjusted.
  • the structure of the second synchrotron 8-2 is the same as that of the first synchrotron 8-1. Any number of circular accelerators can be connected in this way. This can be used to increase the speed of the charged particles. Further, since charged particles can be stored in each storage ring, a necessary amount of charged particles can be prepared in a short time. For example, if the diameter of the storage ring through which charged particles pass is 1 mm, the innermost micro accelerator is 50 mm in radius, the ring pitch is 3 mm, and the substrate radius is 270 mm, then 70 circles Accelerator can be placed.
  • the speed of the 70th ring is 270 times.
  • the speed of the first ring is 1 cm / sec
  • the speed of light is the speed of the twelfth ring
  • the speed of charged particles can be easily increased by using the present invention.
  • protons and heavy particles for example, B and C
  • cancer cells can be destroyed by irradiating the cancer cells from outside the human body.
  • FIG. 3 is a diagram showing a schematic diagram when the circular accelerator 8 is divided and manufactured on a substrate. That is, a method for manufacturing an accelerator when the substrate cannot be made large and a circular accelerator or the like is larger than the substrate size will be described.
  • the circular accelerator 8 as shown in FIG. 2 (a) is quite large. For example, if a 2m ⁇ 2m substrate is required, but only a 1m ⁇ 1m substrate can be prepared, four 1m ⁇ 1m substrates 44 ⁇ 1 to 44-4 (shown by broken lines) are prepared, and quarter patterns 43-1 to 43-4 of the circular accelerator 8 are respectively prepared.
  • the substrates 44-1 to 44-4 are cut at, for example, a dicing apparatus at the positions 45-1, 2, 3, and 4 of the connection portion pattern.
  • the parts to be connected here are the storage rings 24, 27, 33, and 38, they are connected so that the central axes of the storage rings in these parts are aligned. If the inside of the storage rings 24, 27, 33, and 38 can be set to an ultra-low pressure, the connecting portion does not necessarily have to adhere reliably. For example, a member or box that covers this portion may be prepared, and the substrates 44-1 to 44-4 and the members thereof may be attached. A somewhat flexible or flexible member that can adjust the alignment of the storage rings 24, 27, 33, and 38 is desirable. It is more preferable that a vacuuming line is provided on the member or the like so that the inside can be evacuated. If this is repeated, an extremely large circular accelerator can be produced.
  • FIG. 4 shows an example of the charged particle generator shown in FIG.
  • FIG. 4 shows a cross-sectional structure perpendicular to the substrate plane (in the substrate thickness direction).
  • a cavity 76 that is a plasma generation chamber and a cavity 77 that takes out charged particles such as electrons, protons, and various ions generated in the plasma generation chamber 76 and guides them to an acceleration device (13 in FIG. 2) are formed in the main substrate 51.
  • a second substrate (upper substrate) 53 is attached to the upper surface of the substrate 51, and a third substrate (lower substrate) 52 is attached to the lower surface of the main substrate 51.
  • electrodes 58 and 54 are formed on the upper and lower substrates 53 and 52, and the periphery thereof is covered with insulating films 59 and 55 such as silicon oxide films.
  • the electrodes 54 and 58 are patterned and arranged so as to face each other, and the second substrate 53 and the third substrate 52 are attached to the upper and lower surfaces of the main substrate 51.
  • Contact holes are formed in the upper and lower substrates 52, contact electrodes (conductor films) 60 and 56 are formed in the contact holes, and extraction electrodes 61 and 57 are formed on one side of the upper and lower substrates 53 and 52. .
  • a matching circuit 78 and an AC or high-frequency electrode 79 are connected between these electrodes 57 and 61, and one electrode is grounded. Since the inter-electrode distance d1 between the electrode 54 and the electrode 58 is substantially the same as the thickness of the main substrate 51 (strictly, the thickness of the main substrate minus the upper and lower electrode thicknesses), for example, if the thickness of the main substrate is 1 mm Since a high electric field of 1 KV / cm can be applied by applying 100 V, plasma can be generated at a low voltage.
  • the main substrate In order to apply a higher electric field, in addition to applying a high voltage, if the thickness of the main substrate cannot be reduced, or if the thickness of the main substrate (the whole) cannot be reduced, the distance d1 of only the portion where the electrode is provided is reduced.
  • the main substrate may be etched by a predetermined thickness to form an electrode at the bottom thereof, or a protrusion may be provided on the upper substrate or the lower substrate to form an electrode at the protrusion.
  • FIG. 5 is a diagram showing a linear acceleration chamber, in which through chambers 304, 305, and 308 are formed in a substrate 303, and upper and lower substrates 301 and 302 are attached on the substrate 303.
  • a substrate side wall 303 (303-1, 2) is formed between the through chambers 304, 305, 308 and is connected by a central hole 306 (306-1, 2).
  • the through chamber 304 is a charged particle generation chamber
  • the through chamber 305 is a linear acceleration chamber
  • the through chamber 308 is, for example, a cavity.
  • a large number of rectangular parallelepiped (or disc) -shaped electrodes (acceleration cavity electrodes) 310 having a central hole 311 are arranged.
  • the acceleration cavity electrode 310 is supported by conductive columns 312.
  • the conductive support 312 is connected to the contact conductor 313 and is connected to the outer electrode 314.
  • FIG. 6 is a diagram showing an example of a charged particle accelerator tube using a high-frequency waveguide, which is a kind of a disk-loaded traveling wave accelerator tube.
  • 6A is a cross-sectional view perpendicular to the substrate surface (schematic diagram thereof) parallel to the traveling direction of the charged particle beam G, and FIG.
  • FIG. 6B is a cross-sectional view parallel to the substrate surface (schematic diagram thereof).
  • FIG. 6C is a cross-sectional view perpendicular to the substrate surface (schematic diagram) viewed from the left and right directions of FIGS. 6A and 6B, and is a cross-sectional view of the central hole.
  • the charged particle acceleration tube 200 shown in FIG. 6 is formed in the main substrate 201, and is attached to the through hole cavity 204 serving as a passage for charged particles, the upper surface and the lower surface of the main substrate 201, and the upper portion using the through hole cavity 204 as an airtight space. It consists of a substrate 202 and a lower substrate 203.
  • a space (which may be referred to as a high-frequency introduction chamber) 204C-A in which a high-frequency introduction port 208 such as a microwave is in contact with the upper substrate 202 (may be in the lower substrate 203), a microwave, etc.
  • a space 204C-B (which may be described as a high-frequency lead-out chamber) in which a high-frequency lead-out port 209 is in contact with the upper substrate 202 (which may be in contact with the lower substrate 203).
  • a vacuum exhaust port 210 is appropriately provided in the upper substrate 202 or the lower substrate 203, and this vacuum exhaust port 210 is connected to a vacuum pump 213 so that a space through which charged particles pass is close to a vacuum.
  • the vacuum exhaust port 213 is open to the high-frequency introduction chamber or the high-frequency lead-out chamber, but is not limited thereto, and may be provided in another space or cavity.
  • the conductor film 206 is formed in many through-hole cavities 204 in the charged particle acceleration tube 200. That is, in the cavity 204 formed in the main substrate 201, the conductor films 206S1 and 206S2 are formed on the cavity side surface of the main substrate 201, the conductor film 206U is formed on the lower surface of the upper substrate 202, and the conductor film 206B is formed on the upper surface of the lower substrate 203. Is formed. Since FIG.
  • 6C is a cross-sectional view of the central hole 205, the conductor films 206S1, S2, U, and B are not visible, but are depicted as being transparent.
  • the cross section of the central hole 205 is described in a rectangular shape, the central hole 205 is formed by an etching method (wet or dry) in a state where the main substrate 201 is divided. Or it can form in various shapes, such as circular shape.
  • the conductor film 206 should have good conductivity, such as copper, gold, silver, aluminum, Tungsten, cobalt, etc. are better. If there is a possibility that the temperature will rise, a metal film having a high melting point is preferable. Since the charged particle acceleration tube of the present invention can be made small, the entire apparatus can be cooled to a low temperature using a superconductor film.
  • superconductor films examples include niobium (Nb), niobium-titanium (Nb-Ti), niobium-tin (Nb-Sb), magnesium diboride, and high-temperature oxide superconductors (yttrium-based, bismuth-based, etc.). These can be formed as a sputtered film or a coating film. If the thickness of the main substrate 201 is h2, the lateral width (planar width) is a2, and the thickness of the conductor film 206 is t2, the depth d5 of the through-hole cavity 204 is h2-2t2, and the lateral width b2 of the through-hole cavity 204 is a2-2t1.
  • an insulating film for example, a silicon oxide film
  • an adhesion improving film for example, a Ti or TiN film
  • an excellent film is formed on the conductive film 206.
  • the accelerating tube 200 may be provided with a converging electromagnet 207 that converges the divergence of the accelerated charged particles.
  • the focusing electromagnet 207 is installed in the cavity 204 after the charged particles G exit the central hole 205 of the substrate partition wall 201S-B.
  • a quadrupole electromagnet 207 (207-1, 2, 3, 4) is arranged around the cavity 204 as shown in FIG.
  • FIG. 6D is a view showing a cross-sectional structure perpendicular to the longitudinal direction of the cavity 204 in the portion where the quadrupole electromagnet is arranged.
  • Coils 207-2 and 207-4 are formed on both lateral sides of the cavity 204 with the substrate side walls 201S-S1 and 201S-S2 interposed therebetween.
  • An upper substrate 202 exists above the cavity 204, and a coil 207-1 is disposed above the upper substrate 202, embedded in the upper substrate 202, or on or in the upper substrate 202.
  • the upper substrate 202 existing between the cavity 204 and the bottom surface of the coil 207-1 and the cavity is the upper substrate 202-.
  • the thickness of this portion is thinner than the thickness of the upper substrate 202.
  • the upper substrate 202-U is preferably as thin as possible, but can be made very thin, for example, 10 ⁇ m to 1000 ⁇ m.
  • the lower substrate 203 is present below the cavity 204.
  • the coil 207-3 is disposed below the lower substrate 203, embedded in the lower substrate 203, or inside the lower substrate 203.
  • the coil 207-3 when the coil 207-3 is disposed below the lower substrate 203, the coil 207-3 is brought as close to the lower surface of the lower substrate 203 as possible. Optimally, the coil 207-3 may be in contact with the lower surface of the lower substrate 203.
  • the coil 207-3 When the coil 207-3 is embedded in the lower substrate 203 or formed inside the lower substrate 203, the lower substrate 203 existing between the cavity 204 and the upper surface of the coil 207-3 is the lower substrate 203-.
  • the thickness of this portion is smaller than the thickness of the lower substrate 203.
  • the lower substrate 203-B is preferably as thin as possible, but can be made very thin, for example, 10 ⁇ m to 1000 ⁇ m.
  • the center O1 of the cavity 204 is on the horizontal center line C1
  • the axes of the coils 207-2 and 207-4 are arranged in the main board 201 such that the coil 207-2 and the coil 207-4 are aligned with the horizontal center line C1.
  • the coils 207-1 and 207-3 are arranged so that the axes of the coils 207-1 and 207-3 are aligned with the vertical center line C2 that passes through the center O1 of the cavity 204 and is orthogonal to the horizontal center line C1.
  • the magnetic field distribution in the cavity 204 can be made nearly symmetrical, so that charged particles can be converged near the center O1 of the cavity 204.
  • the thicknesses of the substrate side walls 201S-S1 and 201S-S2 are substantially equal, the characteristics of the coil 207-2 and the coil 207-4 are the same, and they are arranged symmetrically with respect to the center O1 of the cavity 204.
  • 202-U and 202-B are made substantially equal in thickness, the characteristics of the coils 207-1 and 207-3 are the same, and they are arranged at symmetrical positions with respect to the center O1 of the cavity 204, and the coil 207- 1.
  • the magnetic field distribution in the cavity 204 can be made nearly symmetric.
  • the quadrupole electromagnet of the present invention can freely set the voltage applied to each coil even if the characteristics and arrangement of the constituting coil, the substrate side wall and the substrate thickness are slightly different, and the internal magnetic field of the cavity 204 can be freely set. Therefore, it is easy to focus the charged particle beam in the vicinity of the cavity center O1.
  • the center O1 of the cavity 204 is the traveling direction G of the charged particles, and therefore it is desirable that the center of the central hole 205 coincides with the center O1 of the cavity 204.
  • the high-frequency introduction chamber 204C-A and The distance of the high-frequency derivation chamber 204C-B is (n + 1) ⁇ m1 + n ⁇ p1.
  • the acceleration electric field distribution may be changed by changing the length p1 of each acceleration cavity and the length of the central hole 205 by changing the length m1. .
  • the size (a2, h2) of the cavity 204 and the size of the central hole 205 are changed.
  • the acceleration electric field distribution may be changed. Since the charged particle acceleration device of the present invention can be manufactured using an LSI process, the size of these devices can be easily changed at low cost. Further, the size and number of the quadrupole electromagnets can be freely changed according to the size of the cavity 204.
  • FIG. 7 is a view showing a quadrupole electromagnet having a role of a converging electromagnet manufactured using the coil (electromagnet) of the present invention.
  • Coils 118-1 and 118-2 are arranged in cavities (coil insertion cavities) 120-1 and 120-2 provided on the left and right (Y direction) of the charged particle passage cavity 204-2, respectively.
  • a second substrate (upper substrate) 202 is attached to a lower portion thereof, and a third substrate (lower substrate) 203 is attached to the lower portion thereof.
  • the coil 140 (140-1) is attached by applying an adhesive or an adhesive sheet to the attachment surface of the second substrate (upper substrate) 202.
  • the coil 140 (140-1) is attached to the lower surface of the coil 140 (140-1) by applying an adhesive or applying an adhesive sheet.
  • the coil 140-2 can be disposed in the same manner on the lower side of the charged particle passage cavity 204-2.
  • a plurality of coils 118 (118-1, 2) and coils 140 (140-1, 2) can be arranged in a direction perpendicular to the paper surface, that is, along the charged particle passage cavity 204-2, and a plurality of quadrupole magnet spaces can be arranged. At the same time.
  • This quadrupole electromagnet can control the convergence and divergence of charged particles passing through the charged particle passage cavity 204-2.
  • a normal electromagnet may be arranged. Since the electromagnet cannot be arranged on the lateral side as it is, the outer region (both sides) of the charged particle converging portion is cut substantially parallel to the charged particle trajectory in the portion where the charged particle is converged, and the opening region (both sides) ) And an electromagnet is arranged in the opening region so that a magnetic field is applied perpendicular to the charged particle trajectory. Since the space is limited as a region, it is desirable to use a small size that generates a strong magnetic field.
  • FIG. 8 is a diagram showing charged particle passage cavities such as the deflecting electromagnets 25, 30, 34, and 37 in FIG. 2 and the electromagnets arranged therein.
  • FIG. 8A is a diagram showing the arrangement state of the charged particle passage cavity 257 and the coil of the deflection electromagnet portion.
  • the charged particle passage cavity 257 is a cavity having a curvature with a radius R at the center trajectory and along the curvature.
  • FIG. 8B shows a cross-sectional view of the charged particle passage cavity 257 along the cross section A1-A2 perpendicular to the center of curvature.
  • the upper and lower sides of the through chamber 264 formed in the main substrate 261 are closed by the upper substrate 262 and the lower substrate 263.
  • the through chamber 264 is a charged particle passage cavity 257, and the center orbit is a cavity having a circular orbit with a radius R.
  • a plurality of coils 260 (260-1, 2, 3) are arranged on the upper surface of the upper substrate 262.
  • the coils 260 (260-1, 2, 3) are attached to the fourth substrate 266, the fourth substrate 266 is attached to the support 265 (265-1, 2), and the support 265 is attached to the upper substrate 262.
  • the lower substrate 263 is provided with coils 259 (259-1, 2, 3). If the magnetic field strength is insufficient, a superconducting magnet or a normal large electromagnet can be used.
  • FIG. 9 is a diagram illustrating a method of making a long linear accelerator. If a large number of linear cavities (including an acceleration chamber and a converging chamber) are formed in one substrate, and the linear cavities are cut out and connected to each other, a linear accelerator having an arbitrary length can be manufactured. For example, since 100 unit linear accelerators having an accelerator width of 10 mm (cavity width of 5 mm) can be obtained using a 1 m ⁇ 1 m substrate, a linear accelerator having a length of 100 m can be manufactured. If the length is 100 m, the speed of protons and particles (B, C, etc.) can be accelerated to 200,000 km / sec or more, so it can be used as a medical accelerator.
  • a linear accelerator having an arbitrary length can be manufactured. For example, since 100 unit linear accelerators having an accelerator width of 10 mm (cavity width of 5 mm) can be obtained using a 1 m ⁇ 1 m substrate, a linear accelerator having a length of 100 m can be manufactured.
  • FIG. 10 is a diagram showing an embodiment in which the circular or linear accelerator of the present invention is applied to a medical micro accelerator.
  • a plurality of accelerators according to the present invention are arranged on a tunnel dome used in MRI or CT so that protons and heavy particles (for example, B and C) can be irradiated from each accelerator.
  • protons and heavy particles for example, B and C
  • a cancer patient is laid in a tunnel, and an ion beam (which may be emitted as neutrons or neutral particles) is injected into the body from the accelerator of the present invention aiming at cancer cells of the cancer patient.
  • the ion beam is light speed or near light speed, it can irradiate cancer cells. Since the acceleration device of the present invention is small (for example, vertical and horizontal 50 cm to 100 cm, thickness 1 cm to 10 cm), a large number of acceleration devices can be arranged in the tunnel dome. If 10 are arranged, the ion beam can be irradiated to cancer cells in the body from various directions with a conventional ion beam amount of 1/10. That is, since the amount of ion beam emitted from each accelerator can be reduced, the cancer cells can be killed without damaging the human body other than the cancer cells.
  • the advantage of the acceleration device of the present invention is that the MRI and CT (for example, X-rays and PET) can be arranged in the tunnel dome together with the acceleration device, so that the ion beam can be irradiated while monitoring the cancer cells of the patient. Cancer cells can be reliably irradiated with a pinpoint.
  • the ion beam of the acceleration device of the present invention can be scanned freely by applying an electric field or magnetic field, and since the device itself is light, the device itself can be moved freely, so that the ion beam can be efficiently irradiated.
  • the acceleration device of the present invention can have a large number of trajectories, it is possible to continuously irradiate a large number of ion beams in a short time by waiting the ion beams in these trajectories. Since the acceleration device of the present invention is a batch production of substrates, it can be easily introduced not only for medical use but also in various research institutions because of its small size and low cost, and structural analysis of various substances can be advanced rapidly and dramatically. It is possible to actively create new substances and develop new drugs. As can be easily understood, the acceleration device of the present invention can be manufactured not only in a batch with a substrate, but also by using a 3D printer, the acceleration device of the present invention having a complicated structure can be easily manufactured.
  • a glass substrate is attached to the upper and lower surfaces of a Si substrate (4 inch wafer or more) to produce a plurality of through chambers in the Si wafer.
  • Adjacent through chambers are partitioned by a substrate side wall plate having a central hole (a horizontal groove parallel to the substrate surface is formed at the center).
  • a substrate side wall plate having a central hole (a horizontal groove parallel to the substrate surface is formed at the center).
  • the through-hole having the central hole There are various methods for forming the through-hole having the central hole. For example, the central hole is divided into the upper and lower portions in the vicinity of the center of the central hole, and the central hole half and the through-chamber half are formed. It can be made to adhere at the place. That is, it is a collective substrate type apparatus.
  • the mass spectrometer includes a sample supply unit, an ionization unit, an extraction electrode unit, a mass analysis unit, and an ion detection unit.
  • the sample gas or sample liquid supplied from the sample supply unit is atomized (gas) at the ionization unit outlet and ionized at the ionization unit to which a high electric field is applied.
  • the generated ions are attracted by the extraction electrode of the extraction electrode / acceleration electrode unit, and are accelerated, decelerated, and converged to enter a mass analysis unit having an electric field chamber and a magnetic field chamber.
  • m mass
  • z charge
  • the ion charge is electron-multiplied by the ion detector, and the amount of ions is detected as a current.
  • the present invention can be said to be a collective substrate type apparatus of a mass spectrometer (GC-MS, LC-MS) combined with gas chromatography, liquid chromatography or the like. (It can also be applied to solid samples.)
  • GC-MS mass spectrometer
  • LC-MS liquid chromatography
  • sample 11 are obtained by applying electrospray ionization (ESI) to the present invention. Since the sample uses a liquid (sample solution) containing the target substance (sample), it is a kind of liquid chromatography (LC) -ESI method.
  • a sample introduction line 17 into which the sample solution enters is connected to the opening 14 of the upper substrate 2.
  • a central hole (sample introduction tube) 11-1 formed in the center (in the thickness direction) of the Si substrate is formed, and the entrance side of the central hole (sample introduction tube) 11-1 is formed in the thickness direction.
  • the vertical hole (sample introduction tube) 13 is connected to the opening 14 of the upper substrate 2.
  • the outlet side of the central hole (sample introduction tube) 11-1 is connected to the ionization chamber 4-1 of the ionization section.
  • the sample liquid enters from the arrow A, and the central hole (sample introduction tube) 11-1 is a capillary (capillary tube), so that it spreads when entering the ionization chamber and atomizes (gasification) (symbol A-1 (Also called spray gas).
  • symbol A-1 Also called spray gas.
  • the sizes of the opening 14 and the vertical hole (sample introduction tube) 13 of the upper substrate 2 can be selected relatively freely.
  • the size of the central hole (sample introduction tube) 11-1 depends on the thickness of the Si substrate 11, but if the Si substrate 11 is also laminated, the thickness can be freely increased.
  • the thickness of the Si substrate 11 can be adjusted from 0.5 mm to 10 mm (of course, it can be adjusted in a wider range), and the diameter of the central hole (sample introduction tube) 11-1 is 50 ⁇ m to 1 mm (main substrate) When the thickness is large (1 mm to 20 mm), it may be more accurate) and the function as a capillary can be exhibited. Since the heating conductor films 9-7 and 10-7 can also be formed in the central hole (sample introduction tube) 11-1, the sample can be heated. Alternatively, a shape 15 is vertically provided on the upper surface of the upper substrate 2 through a concave portion outside the central hole 11-1, and the contact wiring 5 formed on the upper substrate 2 in the conductor film electrode 9-1. The temperature in the central hole 11-1 can be increased by flowing a hot liquid or gas, or by forming a thin film resistor and electrically heating it. Conversely, it can also be cooled.
  • the ionization chamber 4-1 is a through chamber formed in the Si substrate 1.
  • the upper portion is an upper substrate (for example, a glass substrate or a quartz substrate) 2, the lower portion is a lower substrate 3, and the left side surface (in FIG. 11) is the center.
  • the substrate side wall 1-1 having the hole 11-1, the substrate side wall plate 1-2 having the central hole 11-2 on the right side, the back side surface and the near side surface are also surrounded by the Si substrate side wall.
  • An outer electrode 7-1 on which a conductor film electrode 9-1 is formed is connected to a part of the lower surface of the upper substrate 2.
  • the conductor film electrode 9-1 is connected to the conductor film electrode 9-7 on the inner surface of the central hole.
  • a conductor film electrode 10-1 is formed on a part of the upper surface of the lower substrate 3, and the conductor film electrode 10-1 is formed on the lower surface of the lower substrate 3 through the contact wiring 6 formed on the lower substrate 3.
  • the outer electrode 8-1 is connected.
  • the conductor film electrode 10-1 is connected to the conductor film electrode 10-7 on the inner surface of the central hole.
  • the conductor film electrode 9-1 can be formed by being formed on the upper substrate 2 and then attached to the Si substrate 1. Alternatively, the conductive film electrode 9-1 can be formed after the through chamber 4-1 is formed in the Si substrate 1 to which the upper substrate 2 is attached. At this time, since the central hole 11-1 can also be formed, the conductor film electrode 9-7 can also be formed on the inner surface of the central hole.
  • an insulating film (laminated by a CVD method or the like, for example, a SiO2 film or a SiN film) is formed between the conductor film and the Si substrate 1. (Note that other portions of the insulating film are not described.) Further, an insulating film can be formed as a protective film on the conductor film.
  • the Si substrate 1u attached to the upper substrate 2 side and the Si substrate 1b attached to the lower substrate 3 side are attached on the Si side surface after forming a through chamber, a central hole, an insulating film, a conductor film, a protective film, etc. (Attachment surface is indicated by a one-dot chain line M).
  • This adhesion method room temperature bonding, bonding using an adhesive, electrostatic anodic bonding or the like with a glass substrate interposed therebetween can be used. Therefore, a high voltage of 100V to 4000V or 4000V to 100,000V is applied from the outer electrodes 7-1 and 8-1 to the conductor film electrodes 9-7 and 10-7 on the inner surface of the central hole 11-1 as a capillary tube. it can.
  • the counter electrode is the conductor film electrode 10-2-1 on the substrate side wall plate 1-2.
  • the sample solution passes through the central hole 11-1 which is a capillary tube and exits from the ionization chamber 4-1.
  • the charged droplets (spray gas) A-1 are discharged to the penetration chamber 4-1.
  • the inside of the through chamber 4-1 can be heated by using a part of the conductor film electrodes 9-1 and 10-1, and the opening 16 is provided in the upper and lower substrates 2 and 3 and connected to the pump to vaporize.
  • the discharged solvent can also be discharged quickly. Further, since the central hole 11-1 can be heated as described above, the gasification of the sample liquid A can be assisted.
  • the charged droplets become fine particles and dry, and the sample is ionized.
  • a recess similar to the recess 15 is provided around the ionization chamber 4-1 or around the central hole 11-1, and the recess is cooled. Gas (dry ice gas etc.) and cooling water can also be introduced.
  • the contamination in the ionization chamber or the like can be kept clean by introducing a purge gas, a cleaning gas, or a cleaning liquid from the opening. Since the volume of the through chamber of the present invention is very small, it easily returns to the original state in a short time after cleaning.
  • ionization method other ionization methods (atmospheric pressure chemical ionization (APCI), atmospheric pressure photoionization (APPI), electron ionization (EI), ionization by high-frequency plasma using parallel plate electrodes) are also the collective substrate type of the present invention. It can be produced. It is also possible to introduce ions generated outside from an opening provided in the ionization chamber 4-1.
  • APCI atmospheric pressure chemical ionization
  • APPI atmospheric pressure photoionization
  • EI electron ionization by high-frequency plasma using parallel plate electrodes
  • FIG. 12 is a diagram for explaining the electron ionization (EI) method.
  • the ionization chamber 34-1 is a through chamber formed in the Si substrate 31 in which the upper substrate 32 and the lower substrate 31 are attached to the upper and lower surfaces.
  • the sample gas G is introduced from the opening 42, and the vacuum is drawn from the opening 43. And low pressure.
  • a tungsten (W) film filament 41 is formed on the lower substrate surface, a current flows through the outer electrodes 38-1-1 and 38-1-2, the filament 41 is heated, and thermoelectrons (e) are generated.
  • the thermoelectrons e fly toward the electron trap electrode 39-1-2 formed on the facing upper substrate surface.
  • the sample gas G introduced into the ionization chamber 34-1 is ionized by thermal electrons.
  • the generated ions are pushed out by the conductive film electrode (repeller electrode) 40-1-1 formed on the side surface of the substrate side wall 31-1, and are adjacent to the ionization chamber 34-1. It is sent to the extraction electrode / acceleration electrode chamber 34-2.
  • ions are accelerated by extraction electrodes / acceleration electrodes 40-2-1 and 2 and enter the adjacent mass analysis chamber shown in FIG. If necessary, further electrodes are aligned and accelerated or converged.
  • An electromagnetic coil B-3 is disposed outside the upper substrate.
  • Electromagnetic coil B-4 is arranged outside the lower substrate. (Upper N pole) By sandwiching the ionization chamber with a magnet in this way, the thermoelectrons e emitted from the filament 41 move toward the electron trap electrode 39-2-2 while drawing a spiral by the magnetic field, and the collision time with the sample gas molecules (Opportunity) increases and ionization efficiency can be increased. Other methods can also be produced according to the present invention, and an optimum method can be selected depending on the ion species.
  • the extraction electrode chamber 4-2 is partitioned from the ionization chamber 4-1 by a Si substrate side wall plate 1-2 having a central hole 11-2.
  • a Si substrate side wall plate 1-3 having a central hole 11-3 is disposed close to the Si substrate side wall plate 1-2, and the conductor film electrode 10 is formed in the side surface of the Si substrate side wall plate 1-2 and the central hole 11-3.
  • -2-2 is formed and connected to the outer electrode 8-2-2.
  • a conductor film electrode 10-2-1 is also formed on the side surface of the Si substrate side wall plate 1-2 facing the conductor film electrode 10-2-2 on the side surface of the Si substrate side wall plate 1-2. Connect to the outer electrode 8-2-1.
  • the conductor film electrode 10-2-1 of the Si substrate side wall plate 1-2 is grounded, and a voltage having a charge opposite to that of ions is applied to the conductor film electrode 10-2-2 of the Si substrate side wall plate 1-3. Yes.
  • An opening 14 for evacuation is formed in the extraction electrode chamber 4-2 and is maintained at a predetermined pressure. Further, an opening 14 is provided in addition to vacuuming, and the extraction electrode chamber 4-2 can be cleaned by putting an inert gas such as Ar. Further, if necessary, the lead electrode chamber 4-2 is provided with a substrate side wall plate (also forming a conductor film) having a central hole having the same structure as the lead electrode, and is accelerated by applying a reverse voltage with ions, Alternatively, the same voltage as ions can be applied to decelerate and focus.
  • the mass analyzing unit is a double-converging type having an electric field unit and a magnetic field unit. (In the case of the single convergence type, the electric field part is eliminated.)
  • FIG. 13 is a diagram showing a double convergence type mass spectrometer and a detection part. Ions accelerated by the extraction electrode portion enter the electric field chamber 4-3 through the central hole 11-4 of the Si substrate side wall plate 1-4 (velocity v).
  • the electric field chamber 4-3 is a fan-shaped through chamber, and is provided with two opposing side surfaces of the fan-shaped Si substrate 1 (see FIG. 13 (a), in FIG. 12, the rear Si substrate side surface and the front Si substrate side surface). ), Conductive film electrodes 10-8 (10-8-1, 10-8-2) are formed.
  • This conductive film electrode 10-8 can apply a voltage V 2 from the outer electrode 7-3 and 8-3.
  • ZeV 2 / d mv 2 / r where r is the center orbit radius of the electric field chamber 4-3 and d is the distance between the conductor film electrodes 10-8 (10-8-1, 10-8-2).
  • r 2dV 1 / V 2.
  • d 10 mm
  • V 1 10 V
  • V 2 5 V
  • r 40 mm. Therefore, it can be manufactured even for a 4-inch wafer.
  • An energy filter chamber 4-6 is arranged between the electric field chamber 4-3 and the magnetic field chamber 4-4, and a slit that becomes an energy filter near the convergence surface converged by the electric field.
  • (Central hole 11-5-2 of substrate side wall plate 1-5-2) is arranged to allow only ions having a certain range of kinetic energy to pass through. The ions selected by the electric field pass through the central hole 11-5-3 of the Si substrate side wall plate 1-5-3, enter the magnetic field chamber at a velocity v, and the trajectory is bent by the fan-shaped magnetic field B. Draw a trajectory.
  • the magnetic field B is applied in a direction perpendicular to the substrate surface. That is, the B-1 electromagnet (coil) is disposed on the upper surface of the upper substrate 2 and the coil axis is disposed on the lower surface of the lower substrate 3 so as to be perpendicular to the substrate surface.
  • Such a coil can also be realized by laminating coil wiring (Cu or the like formed by PVD method and plating method) on a substrate. (Patent pending) Coils formed on the substrate can be reduced in size (coils with a diameter of 0.1 mm to 1 mm or less can be easily produced), so even if the magnetic field chamber is small, sufficient magnetic field strength is applied to the magnetic field chamber it can.
  • the coil formed on the substrate when used, the coil can be arranged at a predetermined position in the magnetic field chamber very accurately (alignment error of 5 ⁇ m or less).
  • the coils can be arranged on the substrate surface without gaps (with an interval of 10 ⁇ m or less), and the current of each coil can be controlled, so the magnetic field strength of the magnetic field chamber in the area where multiple coils are arranged is uniform. Can also be held. If the thickness of the interlayer insulating film of the coil wiring is 10 ⁇ m and a double winding wiring is used (in the case of a substrate forming coil, multiple winding can be easily manufactured without increasing the number of processes), the coil height of the above size is about 5 mm.
  • the coil wiring is made of a superconductor (for example, an Nb-based material or a high-temperature superconducting material), a large current can be passed, so that the adjustment range of the magnetic field strength is increased, and it can be applied to a molecule having a large mass. Even if the coil region is immersed in the liquid He, the volume can be reduced, and the running cost can be reduced.
  • a superconductor for example, an Nb-based material or a high-temperature superconducting material
  • FIG. 13B is a plan view showing a mass spectrometer provided with a large number of ion detectors around the magnetic field part. Ions 24 traveling through the extraction electrode / acceleration electrode chamber or the through chamber 22-1 which is the energy filter chamber shown in FIG. 13A are transferred from the central hole 27 of the Si substrate side wall plate 21-1 to the through chamber 22-2. Emitted.
  • a part of the penetration chamber 22-2 directly connected to the penetration chamber 22-1 is a magnetic field chamber B, and ions emitted from the penetration chamber 22-1 always pass through the magnetic field chamber B.
  • the magnetic field B is applied at 180 degrees with respect to the ion incident axis.
  • the magnetic field chamber B is a rectangular (square, rectangular, etc.) or semicircular magnetic field, and the magnetic field B is applied perpendicular to the substrate surface.
  • the outer periphery of the through chamber 22-1 has a rectangular shape or a circular shape, and a large number of ion detectors 22-4 (22-4-1-n, 22-4--2-m, 22) are formed along the outer periphery.
  • the size of the device is extremely large, it is difficult to manufacture the device, it takes time to manufacture, it is difficult to align the performance of individual ion detectors, the manufacturing cost is enormous, etc. For this reason, it was impossible to produce the structure shown in FIG. 13B.
  • the present invention has a great merit that it can be easily produced.
  • the ions selected in the mass spectrometry chamber 4-4 enter the ion detection chamber 4-5 through the central hole 11-6 of the substrate side wall plate 1-6.
  • the conductor film electrode 9-3 formed on the upper surface of the central hole 11-6 and the conductor film electrode 10-3 formed on the lower surface are parallel plate electrodes, and the outer electrode 7-4 connected to these electrodes. And by adjusting the voltage applied to 8-4, the trajectory of ions can be changed in the vertical direction.
  • a substrate side wall plate 1-7 (length L) having a central hole 11-7 serving as an electron multiplier is formed in the ion detection chamber 4-5.
  • the secondary electron emission material film 12 When the electron multiplier tube is a parallel plate type, the secondary electron emission material film 12 (12-1, 12-2) is formed on the bottom and both side surfaces of the central hole 11-7 and a part of the upper substrate / lower substrate. In the case where the electron multiplier tube is a channel type, a secondary electron emission material film is formed on the entire inner surface and both side surfaces of the central hole 11-7 and a part of the upper substrate / lower substrate. Secondary electron emitting materials are, for example, MgO, Mg, BeO. Conductor films 9-4, 9-5, 10-4, 10-5 are formed on both ends of the substrate side wall plate 1-7, and the outer electrodes 7-5, 7-7, 8-5 are passed through the contact wirings 5 and 6. , 8-6.
  • the amount of secondary electrons emitted repeatedly is increased one after another, and the multiplied electrons are emitted from the central hole 11-7, which is an electron multiplier, and formed on the side wall of the Si substrate behind it.
  • the current flows to the outer electrode 7-7 through the contact 5 in contact with the conductor film electrodes 9-6 and 10-6. That is, the selected ion amount can be detected.
  • FIG. 14 is a completed view of the final product (main body only) of the present invention. That is, a sample supply unit, ionization unit, extraction electrode / acceleration electrode unit, mass analysis unit ⁇ electric field unit (1 / (4 sector shape), magnetic field portion (1/4 sector shape) ⁇ , and mass spectrometer having an ion detector.
  • a vacuum system is externally attached.
  • a plurality of sample supply units can be arranged, and a liquid sample or the like is connected from the outside to the sample supply unit of the apparatus.
  • Each functional part is connected to an electrode by a conductor film wiring and can be controlled by a control and analysis LSI.
  • the mass spectrometer of the present invention is sized to be accommodated in a 4 inch to 8 inch wafer (substrate), and an ultra-small mass analyzer can be manufactured at a very low cost.
  • the resolution can be processed with extremely high accuracy, and there is no assembly error, and a precise device can be manufactured. Therefore, it is possible to obtain the same level of accuracy as in the past (the resolution is 10,000 or more for the double-converging conventional product).
  • the conventional external electromagnet and superconducting magnet can be used for the electromagnet, the magnetic field strength can be set freely.
  • the mass spectrometer of the present invention can also be produced using a 3D printer.
  • a 3D printer When a 3D printer is used, an insulating film or a conductor film can be laminated simultaneously or sequentially on the substrate, so that a monkey structure can be easily manufactured.
  • the main substrate When using an LSI / MEMS process, the main substrate is divided at the center. (For example, a divided substrate including a central hole) can be manufactured by sequentially stacking without dividing.
  • the present invention can be applied to other types of mass spectrometers such as quadrupole type, ion trap type, tandem type, time-of-flight type, and FT-ICR (Fourier Transform Ion Cyclotron Resonance). Various choices can be expected for a wide range of applications.
  • FIG. 15 is a diagram showing a method or apparatus for forming a pattern on a substrate through hole or a sidewall of a substrate recess.
  • a through hole (or a recess) 1009 is formed in the main substrate 1011 and a conductor pattern such as an electrode or a wiring is formed on the side wall of the through hole 1009 will be described.
  • An insulating film 1012 is stacked on the side surface of the through hole 1009 of the substrate 1011.
  • the substrate 1011 a substrate suitable for the purpose of use is used.
  • the substrate is silicon (Si), various semiconductor substrates such as SiC, GaN, InP, and C, insulating substrates such as glass, quartz, sapphire, various plastics, various ceramics, Al, Cu, A conductive substrate such as a metal such as Fe or an alloy can be used.
  • the insulating film 1012 is, for example, a silicon oxide film, a silicon oxynitride film, or a silicon nitride film, and can be formed by an oxidation method, a CVD method, a PVD method, a coating method, or the like.
  • the insulating film 1012 is not always necessary, but it is preferable to stack the insulating film 1012 in order to improve the adhesiveness with the adhesive layer 1013 stacked thereon.
  • An adhesion layer 1013 is stacked over the insulating film 1012. This adhesion layer 1013 is used for improving adhesion with the conductor film 1014 laminated thereon or for preventing diffusion (barrier).
  • the conductor film 1014 is a plating layer, it also serves as a seed (seed) layer.
  • the adhesion layer 1013 is a conductor film, such as Ti, TiN, TiO, Ta, or TaN.
  • the conductor film 1014 is, for example, copper (Cu) plating, it is preferable to further stack a Cu film.
  • These adhesion layers 1013 can be stacked by a CVD method or a PVD method.
  • a conductor film 1014 is stacked on the adhesion layer 1013.
  • the conductor film 1014 is various metal films such as Cu, Al, Au, W, and Mo. Conductive carbon nanotubes or superconductors may be used.
  • These conductor films 1014 can be laminated by a CVD method, a PVD method, a coating method, or a plating method. In the case of the plating method, it can be formed by electroplating by energizing using the adhesion layer and the sheath layer 1013.
  • a photosensitive film 1015 is laminated on the conductor film 1014.
  • the photosensitive film 1015 is a photoresist film or a photosensitive resin.
  • the photosensitive film 1015 is formed by a coating method, a dip method, a spray method, an electrodeposition method, or the like. Since it is necessary to laminate also in the through-hole 1009, it is easy to set conditions for the dipping method and the electrodeposition method. Since the aspect ratio of the through hole 1009 is not so high (about 0.5 to 2), the photosensitive film 1015 can also be formed inside the through hole 1009.
  • exposure is performed.
  • exposure can be performed by an oblique exposure method.
  • the aspect ratio is 1, when the deepest bottom of the substrate 1011 is exposed, oblique exposure may be performed at an angle of about 45 degrees to make the photosensitive film pattern as nearly vertical as possible.
  • the photosensitive film shape is a reverse taper shape of about 45 degrees.
  • the photosensitive film shape has a reverse taper of about 27 degrees.
  • the pattern shift of the photosensitive film pattern is 1 ⁇ m to 2 ⁇ m, which is about 1% compared to the electrode area (width) and wiring pattern area (width). Pattern deviation is hardly a problem. Therefore, if the oblique exposure method is used, a photosensitive film pattern in the through hole 1009 can be formed.
  • FIG. 15 shows an exposure apparatus 1020 using a light emitter formed on a substrate.
  • a light emitter 1022 is formed on both surfaces of a substrate 1021, and a substrate on which the light emitter 1022 is formed is sandwiched between transparent substrates 1024 is used as an exposure apparatus.
  • a portion 1026 through which light from the light emitter 1022 passes and a portion 1025 through which light does not pass are formed on the transparent substrate 1024.
  • the pattern of the portion 1026 corresponds to the pattern on the side surface of the through hole 1009.
  • a space 1023 exists between the light emitter substrate 1021 and the transparent substrate 1024, but the space 1023 is formed when the light emitter substrate 1021 is set in the container of the transparent substrate 1024.
  • This exposure method apparatus 1020 can also be formed by a method similar to the mass analyzer and the acceleration apparatus of the present invention. That is, a through hole 1023 is formed in the substrate 1028, and the light emitter substrate 1021 is attached to one side. A region where the illuminant 1022 is located is arranged in the through hole 1023. A transparent substrate 1024 is attached to the other side of the substrate 1028. Here, the through hole 1023 becomes a space. In the case where the light emitters 1022 are formed on both sides of the light emitter substrate 1021, the substrate 1028 and the transparent substrate 1024 may be attached to both sides.
  • the light emitter 1022 is, for example, an LED element.
  • the LED element may be formed directly on the substrate 1021, or the LED chip can be mounted on the substrate 1021.
  • Substrates on which LED elements can be directly formed are various compound semiconductor substrates such as GaN, GaAs, and InP, substrates obtained by epitaxially forming various compound semiconductor layers, and bonded substrates.
  • a substrate for mounting the LED chip is a COB substrate, a ceramic substrate, or the like. In any substrate, a wiring layer is formed, and LED elements and LED chips can be lit.
  • the light emitter 1022 is also an organic EL (electroluminescence) element.
  • the organic EL element may be formed directly on the substrate, or the organic EL element may be mounted on the substrate.
  • the portion 1025 that does not transmit light from the light emitter 1022 can be formed, for example, by forming a metal film layer (Al film or the like) on the transparent substrate 1024 and patterning it by an exposure method.
  • a light absorbing material such as carbon may be mixed with the photosensitive film and patterned by an exposure method, followed by heat treatment to obtain a portion 1025 that does not transmit light.
  • This pattern serves as a mask for the pattern formed on the substrate side surface of the through hole 1009.
  • the exposure apparatus 1020 produced as described above is inserted into the through hole 1009 and aligned, and then the light emitter 1022 is turned on and light 1027 is emitted from the portion 1026 through which light passes.
  • the light 1027 selects a light emitter so that the photosensitive film 1015 has a wavelength to be exposed.
  • photosensitive film patterns 1015-1 and 1015-2 are formed on the substrate side wall of the through hole 1009.
  • the photosensitive film shown in FIG. 15 is positive, but a negative photosensitive film can also be used. Since the distance between the exposure apparatus 1020 and the substrate side wall of the through-hole 1009 is short, the light beam 1027 emitted from the exposure apparatus 1020 is a light beam substantially perpendicular to the substrate side wall of the through-hole 1009. Since the patterns 1015-1 and 1015-2 are substantially vertical patterns, there is almost no pattern shift. Note that the photosensitive film patterns 1015-3 and 1015-4 can also be formed on the upper and lower surfaces of the substrate 1011 by using a normal exposure method.
  • FIG. 15 does not show the depth side (the front surface or the rear surface in the direction perpendicular to the paper surface), but the front surface or the rear surface can be exposed by arranging a substrate on which LED elements are formed in the same manner on the front surface or the rear surface.
  • a substrate having LED elements disposed on the front surface is disposed.
  • a substrate on which LED elements are disposed is disposed on the rear surface.
  • FIG. 18 shows an exposure apparatus in which light emitters are arranged on the front and rear surfaces.
  • the substrate 1061 having the LED element 1063 disposed on one side is disposed on the side surface (which may be considered as an end surface, front surface side) of the substrate 1021 where the LED elements 1022 of the exposure apparatus 1020 illustrated in FIG. 15 are disposed on both surfaces.
  • a substrate 1062 in which LED elements are arranged on one side is arranged on the side surface (which may be considered as an end surface, the rear surface side) of the substrate 1021.
  • the front side surface 1024 (1024-S3) of the transparent substrate 1024 is disposed on the LED element mounting surface (front surface) side of the substrate 1061 with the space 1023 interposed therebetween, and this transparent substrate 1024 (1024-S3) is also disposed.
  • a mask pattern that is a portion that does not transmit light is formed, and a photosensitive film pattern that matches the mask pattern is also formed on the front side of the through chamber 1009 by the light of the LED element 1063 mounted on the substrate 1061.
  • a rear side surface 1024 (1024-S4) of the transparent substrate 1024 is disposed on the LED element mounting surface (rear surface) side of the substrate 1061 with the space 1023 interposed therebetween, and the transparent substrate 1024 (1024-S4).
  • the transparent substrates facing the LED element mounting surface on the side surface of the substrate 1021 are 1024 (1024-S1) and 1024 (1024-S2).
  • the upper surface 1024 (1024-T) of the transparent substrate 1024 is attached to the upper surface of the substrate 1021, and the lower surface 1024 (1024-B) of the transparent substrate 1024 is attached to the lower surface of the substrate 1021, and the LED element mounting substrate 1021 is supported.
  • the substrates 1061 and 1062 may also be attached to the upper surface 1024 (1024-T) and the lower surface 1024 (1024-B) of the transparent substrate 1024.
  • the substrates 1061 and 1062 may or may not adhere to the end surfaces (front surface and rear surface) of the substrate 1021.
  • the upper and / or lower end surfaces of the substrates 1061 and 1062 are attached to and supported by the upper surface 1024 (1024-T) and the lower surface 1024 (1024-B) of the transparent substrate 1024.
  • the upper surface 1024 (1024-T) and the lower surface 1024 (1024-B) of the transparent substrate 1024 are not necessarily transparent because they do not need to transmit light.
  • the upper surface 1024 (1024-T) and the lower surface 1024 (1024-B) of the transparent substrate 1024 may be separate substrates 1028 (upper substrate) and 1029 (lower substrate). In that case, the transparent substrate 1024 (1024-S1 to S4) is attached to the separate substrates 1028 and 1029.
  • a photosensitive pattern can be formed on the four substrate side walls of the through chamber 1009. Even in the state of the art, if the width of the through chamber is 2 mm or more, the substrates 1061 and 1062 can be disposed on the end face of the substrate 1021 as shown in FIG.
  • the underlying conductor film 1014 and adhesion layer 1013 can be removed by etching.
  • Etching can be performed by wet etching or dry etching.
  • etching can be performed by putting an etching solution into the through hole 1009 by dipping.
  • spray etching or irradiation etching etching can be performed by oblique spraying or oblique irradiation.
  • dry etching etching can be performed by flowing an etching gas into the through hole 1009.
  • directional dry etching for example, RIE
  • etching can be performed by oblique irradiation.
  • FIG. 16 is a view showing a through hole side wall etching apparatus 1030.
  • a through hole (chamber) 1032 is formed in the substrate 1031 and the substrates 1033 and 1034 are attached to both sides thereof. These manufacturing methods are the same as those described above.
  • An etchant or etching gas introduction hole 1035 is formed in the central portion or part of the substrate 1034.
  • the etching gas (liquid) introduction hole 1035 can be produced by bonding the substrates. Alternatively, the etching gas introduction hole 1035 can be formed in the substrate 1033 and / or 1034. A large number of etching gas or etching solution ejection holes 1036 are formed in the substrates 1033 and 1034 corresponding to the depth of the through hole 1009.
  • the through-hole sidewall etching apparatus 1030 is inserted into the through-hole 1009, and an etching gas or etchant ejection hole 1036 is disposed in a region corresponding to the sidewall of the through-hole 1009.
  • the etching gas (liquid) 1037 is introduced from the etching gas (liquid) introduction hole 1035, and the etching gas (liquid) 1038 is further ejected from the etching gas (liquid) ejection hole 1036 to the substrate side wall of the through hole 1009 to form the conductor film. 1014 and the adhesion layer 1013 are etched. As a result, the pattern of the conductor film 104 can be formed on the side wall of the through hole 1009.
  • the etching gas (liquid) 1038 to be ejected is ejected at an angle close to perpendicular to the substrates 1033 and 1034.
  • the shape of the conductor film 1014 and the like can also be obtained as a nearly vertical shape. Further, since the speed and angle of the etching gas (liquid) 1038 can be adjusted by changing the pressure of the introduced etching gas (liquid) 1037, the etching speed and shape of the conductor film 1014 and the like can be controlled. Dry etching is also possible by generating an electric field between the substrate 1011 side to be etched using the substrates 1033 and 1034 as a conductor substrate and the conductor substrates 1033 and 1034, and the etching rate and shape of the conductor film 1014 and the like are also possible. Can also be controlled.
  • FIG. 16 shows a substrate side wall surface etching apparatus for the through chamber 1009, but the front side and the rear side are not shown. Can be etched.
  • the etching device 1030 is manufactured according to the size of the through chamber 1009. Good.
  • the atmosphere in which the substrate or the like is disposed is a temperature that can be etched from a low temperature to a normal temperature to a high temperature, and is maintained at a low pressure to a normal pressure to a high pressure that can be etched.
  • the aspect ratio of the through hole 1009 used in the invention of the present invention (ratio of the diameter (width) of the through hole to the thickness of the substrate 1011) is not so large, a film laminated on the side surface of the through hole (CVD, PVD, plating, etc.)
  • the step coverage ratio (ratio of the thickness of the film on the side surface of the through hole to the flat portion) is not so small. For example, when the thickness of the substrate 1011 (through hole depth) is 5 mm to 20 mm, the through hole width is about the same, so the aspect ratio is 1, and the step coverage is about 30 to 80%. This step coverage will be improved by technological improvements such as CVD, PVD and plating.
  • the substrate sidewall exposure apparatus 1020 and the substrate sidewall etching apparatus 1030 of the present invention can be inserted without contacting the substrate sidewalls on both sides as long as the width is 4 mm or less.
  • the thickness of the light emitter mounting substrate is 0.5 mm
  • the thickness of the light emitter is 0.2 mm
  • the thickness of the (main) substrate 1021 is 2 mm
  • the thickness of the transparent substrates 1024 on both sides is 0.5 mm
  • the width of the substrate side wall exposure apparatus 1020 is about 3.2 mm.
  • the width of the substrate side wall etching apparatus 1030 is about 3 mm.
  • the thickness of the substrate 1011 is 5 mm to 20 mm
  • the thickness of the insulating film 1012 is 100 nm to 10000 nm
  • the thickness of the adhesion layer 1013 is 100 nm to 100000 nm
  • the thickness of the conductor film 1014 is 1 ⁇ m to 500 ⁇ m
  • the thickness of the photosensitive film 1015 is It is also possible to select 1 ⁇ m to 500 ⁇ m. However, the optimum size can be selected regardless of these sizes.
  • FIG. 17 is a diagram showing a method for producing a penetration chamber of an accelerator or a mass spectrometer of the present invention using a mold.
  • FIG. 17 shows a case where the mass spectrometer shown in FIG. 14 is manufactured.
  • a mold 1040 having a sample supply unit / ionization unit 1041, an extraction electrode unit 1042, an electric field unit 1043, a magnetic field unit 1044, and an ion detection unit 1045 is manufactured.
  • This mold may be produced in advance and the mold may be produced in accordance with the mold, or may be assembled and produced.
  • the mold can also be produced using a 3D printer device.
  • As the mold material an optimal material is selected according to the material of the substrate 1046 covering the periphery.
  • the material of the substrate 1046 is Si (PolySi, amorphous Si, or single crystal Si)
  • a material having a melting point and a reaction temperature with the material higher than the formation temperature is selected.
  • materials such as carbon (C), WC, quartz, sapphire, and zirconia (ZrO2). These materials can be formed into powder by sintering.
  • the shape of the mold is the same shape as that produced with respect to a planar shape (in this case, a mass spectrometer), and is a columnar body having that shape.
  • a substrate material is crystal-grown around the mold 1040, a molten material is poured into the substrate material to produce an ingot, or the mold material is surrounded by a powder body to sinter or harden to produce an ingot.
  • powder sintering there is an advantage that sintering can be performed at a temperature lower than the melting point of the powder body.
  • an ingot 1048 in which the mold body 1040 is contained is formed. If the mold body 1040 is removed, the same cavity as the mold body is formed in the ingot 1048. If this ingot 1048 is cut to the same thickness as the mass spectrometer, a substrate (wafer) having a through-hole can be produced.
  • Substrate cutting from the ingot 1048 includes cutting with a wire saw or cutting using dicing. After the cutting, necessary polishing, chemical polishing, or CMP is performed to bring the substrate surface and the substrate sidewall surface of the through chamber into a predetermined surface state. You can also.
  • the ingot 1048 can be cut while the mold body 1040 is contained, and the mold body 1040 may be removed after cutting.
  • the molding material can be removed by performing HF treatment to melt (a part or all of) the molding material.
  • the mold material can be removed by changing the carbon material to CO 2 with oxygen.
  • the molding material can be made of metal such as Al, glass, quartz, ceramic, etc. After the ingot is made, the plastic does not melt, but the metal, glass, quartz, ceramic, etc. can be treated with a soluble solution. It ’s fine.
  • mold materials are made of gypsum, sand, etc., and these powders are sintered or poured into the melt using metals, various plastics, glass, Si, sapphire, quartz, and various ceramics as substrates. It is only necessary to prepare the substrate and remove the gypsum and sand.
  • the molding material is preferably a material having a melting point higher than that of the metal or alloy and hardly reacting with each other up to a temperature near the melting point temperature.
  • the melting point of the solder alloy (Sn—Pb, Sn—Cu, Sn—Ag—Cu, Sn—Zn—Bi, Sn—Zn—Al, etc.) is 150 ° C. to 400 ° C. Therefore, a heat-resistant polymer material such as polyimide, glass, quartz, sapphire, various ceramics, Si, or the like can be used as the molding material.
  • the thermal expansion coefficient of the mold material is larger than that of the substrate.
  • the mold shrinks more than the substrate when the temperature is lowered, so the molding material can be removed from the substrate ingot naturally.
  • the mold size is selected in consideration of the cavity (through hole) size at the operating temperature (for example, room temperature, or the temperature when using a superconductor).
  • the substrate ingot can be easily manufactured. It is.
  • the substrates and the molding material having substantially the same thermal expansion coefficient are used, the design can be made without considering thermal contraction or thermal expansion.
  • An electrode / wiring film may be formed on the side surface of the mold body 1040, and the electrode / wiring film may be transferred to the inner surface of the ingot 1048 after being surrounded by a substrate material.
  • an electrode / wiring film is attached to the entire side surface of the mold body 1040, and the electrode / wiring film is transferred to the entire inner surface of the ingot 1048.
  • the electrode / wiring film formed on the inner surface of the formed through-hole is patterned to form an electrode / wiring layer.
  • electrode / wiring films 1051 and 1052 are partially formed on the side surface of the mold body 1040.
  • the electrode / wiring film 1051 is an electrode / wiring film that is continuous in the depth direction of the ingot 1048. After cutting into a substrate body, only the depth direction of the through chamber may be patterned.
  • the electrode / wiring film 1052 is a pattern formed according to the pattern formed on the inner surface of the through-hole of the substrate, the patterning of the electrode / wiring film 19052 after cutting into a substrate body is unnecessary. However, it is necessary to accurately form the electrode / wiring film pattern 1052 formed on the side surface of the mold body 1040 at the position of the substrate penetration chamber after cutting.
  • the mold body 1040 may be formed using a mold in addition to the CVD method, the PVD method (including the ion plating method), the coating method, the dipping method, and the like. When forming, there is a method in which an electrode / wiring film is formed on the mold and transferred.
  • an electrode / wiring film can be formed using a 3D printer.
  • the electrode / wiring film can be formed on the ingot formed by removing the mold body with the 3D printer.
  • the shape of the ingot 1048 can take various shapes such as a cylindrical shape, a rectangular cross section, a square shape, a triangular shape, various polygonal prisms, and an elliptical shape.
  • the crystal form of the ingot can also be composed of a single crystal, polycrystal, amorphous, solidified powder body, resin state, plastic body, rubber-like body, or a combination thereof.
  • the thickness of the ingot may be the same as the thickness of the through chamber, and in that case, only one main substrate can be taken from one ingot. Become. Furthermore, there is a case of an ingot in which only a half-thickness substrate can be taken. In that case, it is necessary to form a through chamber by stacking the substrates (by bonding or the like). It is also possible to produce a flat substrate without inserting a mold and punch the substrate with a mold to produce a through chamber. Especially when the substrate is metal, it is easy to punch. Moreover, a penetration chamber and a recessed part can be produced also by laser cutting.
  • a through chamber having an arbitrary depth (height) can be produced by the method shown in FIG. That is, not only 0.1 mm to 1 mm but also 1 mm to 1 cm, 1 cm to 10 cm, 10 cm to 50 cm, 50 cm or more can be easily produced.
  • a large-area device can be manufactured by connecting as shown in FIGS.
  • FIG. 19 is a diagram showing a method of forming the central hole.
  • a mold 1073 for forming a central hole exists between the molds 1071 and 1072 for forming the through chamber.
  • FIG. 19A is a perspective view of the mold 1070 and is shown in a perspective view. Center hole molds 1073 connecting the rectangular parallelepiped molds 1071 and 1072 are spaced apart and arranged at equal intervals.
  • FIG. 19B is a cross-sectional view (height direction) of the mold 1070.
  • a one-dot chain line 1074 indicates a cut surface.
  • a substrate may be formed around the mold 1070 including the molds 1071 and 1072 and the center hole mold 1073 to form a substrate ingot, and then the mold may be removed.
  • the mold may be removed after the substrate ingot is cut to produce the (main) substrate. Since the center hole mold 1073 is smaller in size than the molds 1071 and 1072, the mold 1071 and 1072 can be easily separated at the joint between the center hole mold 1073 and the molds 1071 and 1072 if a light impact is applied after separating the substrate boundary surface from the mold 1071 and 1072.
  • the molds 1071 and 1072 can be folded and separated from the substrate ingot or the substrate after cutting the substrate ingot. In the case where the central hole mold 1073 and the molds 1071 and 1072 are of the same material, if the adhesion between the central hole mold 1073 and the molds 1071 and 1072 is weakened, it can be separated with a lower impact force.
  • the mold is made of sapphire (aluminum oxide, melting point: about 2070 ° C.), and the substrate ingot is made of silicon (melting point: 1410 ° C.).
  • the boundary between silicon (ingot, substrate) and sapphire (mold) is etched with a liquid or gas that etches sapphire rather than silicon, and is separated with a gap.
  • the mold is made of quartz (melting point: about 1700 ° C.)
  • the substrate ingot is made of Si (melting point: 1410 ° C.).
  • the boundary between Si (ingot, substrate) and quartz is etched with a liquid or gas that etches quartz rather than Si, and a gap is formed to separate them.
  • etching solution for quartz.
  • the mold is made of Fe (melting point 1540 ° C.), and the substrate ingot is made of glass (melting point 600 ° C. to 700 ° C.).
  • the boundary between glass (ingot, substrate) and Fe (mold) is etched with a liquid or gas that etches Fe rather than glass, and a gap is formed to separate them.
  • Fe etching solutions include hydrochloric acid and sulfuric acid.
  • the through chamber can also be manufactured by a method in which the mold 1070 is manufactured in a split mold divided into several blocks and the split mold is removed after the ingot is formed. Even at that time, if it is difficult to remove the center hole mold 1073 from the ingot, the center hole mold 1073 is dissolved with a wet etching solution or an isotropic dry etching gas.
  • the center hole mold 1073 can be exposed and removed by cutting along a plane (shown by a broken line) 1075 passing through the substantially central portion of the center hole. Also in this case, the boundary between the center hole mold and the substrate can be easily etched and separated by using a solution capable of etching the center hole mold 1073 or a dry etching gas.
  • the upper and lower substrates separated after attaching the necessary film to the through chamber and the central hole are attached by the cutting surface 1075.
  • a substrate having a normal central hole can be manufactured. It is also possible to attach a necessary film around the mold 1070 and transfer the film to a substrate (ingot) to form an insulating film, a conductor film or a pattern thereof on the inner surface of the through chamber or the central hole.
  • the central hole mold 1073 is not used, it is necessary to produce a central hole that connects the through chamber to the substrate having the through chamber.
  • FIG. 20 is a diagram illustrating a method of forming a central hole in a substrate cut at a position approximately half the height of the central hole of a portion where the central hole is formed.
  • FIG. 20A is a plan view of the substrate before forming the central hole.
  • a plan view of the substrate 1080 on which the through chamber 1076 (1076-1, 2) and the through chamber 1077 (1077-1, 2) are formed is a cut surface 1075 indicated by a broken line in FIG.
  • the through chamber 1077 (1077-1, 2) is a through chamber of the accelerator or mass analyzer adjacent to the accelerator or mass analyzer having the through chamber 1076 (1076-1, 2).
  • the central hole has not yet been formed.
  • Reference numeral 1079 denotes a substrate surface or substrate.
  • 20 (d) to 20 (g) are cross-sectional views of the portion where the central hole should exist in FIG. 20 (a).
  • FIGS. 20 (d) and 20 (e) are broken lines so that the top and bottom of the substrate can be seen. Is shown.
  • a photosensitive film 1081 is formed on the substrate surface 1079 and patterned to open the central hole forming region 1082 (1082-1, 2).
  • FIG. 20E is a cross-sectional view of FIG.
  • the substrate 1079 is etched using the photosensitive film pattern 1081 as a mask to form a central hole 1083.
  • This etching may be formed using a laser or the like.
  • it can be produced by a polishing method.
  • a cylindrical polishing jig suitable for the size of the central hole is rotated to polish half of the central hole (a semicircular columnar shape on the lateral side).
  • polishing can be performed while applying a polishing agent and water and mixing a lighter etching solution.
  • FIG. 20G shows a polishing method using a cylindrical polishing jig 1084.
  • the substrate 1079 is polished by rotating the cylindrical polishing jig 1084 to the area where the central hole is formed while rotating.
  • the cylindrical polishing jig 1084 is attached to a support table that can be moved up and down with respect to the substrate 1079.
  • the support table is gradually lowered, and when the substrate 1079 is shaved to a predetermined depth, the support table is lowered and raised. As a result, half of the central hole can be formed in the substrate 1079.
  • the photosensitive film pattern 1081 is not necessary when a cylindrical polishing jig is used.
  • the necessary filming (insulating film, conductor film, etc.) and photolithography / etching are performed, and the necessary structures are formed in the upper and lower half portions of the through chamber.
  • a main substrate having a desired through-chamber, central hole, conductor film pattern, and the like is manufactured by joining the vertically divided portions using an electric coupling method or the like.
  • the upper and lower substrates can be produced by the same molding method.
  • contact holes, gas and liquid introduction holes, vacuum suction holes, high frequency introduction / discharge holes, and the like can be formed by a molding method. If the insulating film and the conductor film are laminated and patterned by cutting at a desired thickness after the formation, desired upper and lower substrates are manufactured.
  • the upper and lower substrates are attached to the upper and lower surfaces of the main substrate thus manufactured to manufacture the present invention.
  • a mold can be produced even with a hollow mold. Surround the mold with a thin film or sheet to make it hollow. (It is called a mold frame.) An inert gas such as nitrogen, oxygen, air, He or Ar may be put into the cavity of the mold frame to apply an appropriate internal pressure. When the temperature is raised when manufacturing the substrate ingot, the gas in the cavity expands, and the internal pressure increases. Therefore, the strength of the mold frame is adjusted so as not to be deformed by the internal pressure. Alternatively, even if the mold frame is deformed, the strength of the mold frame and the internal pressure in the cavity may be adjusted so that the substrate ingot becomes an accurate mold during manufacture. Of course, the mold frame material must be formed of a material that does not deform or melt when the ingot is manufactured.
  • the mold frame can be separated from the ingot substrate. Further, an etching solution or an etching gas (including plasma etching) can be put into the cavity, and the mold frame can be dissolved from the inside and outside because the thickness of the mold frame is thin. As a result, the mold frame can be removed from the ingot substrate.
  • the center hole mold can be a hollow mold.
  • FIG. 21 is a diagram ((b), (c)) illustrating a method ((a)) for polishing the wall of the through chamber to a smooth and smooth surface and a method for transferring the pattern to the wall of the through chamber.
  • FIG. 21A is a view showing a method of polishing the inner wall (inner surface) of the through chamber 1086 of the ingot substrate having the through chamber 1086 after removing the mold for forming the through chamber.
  • a cylindrical polishing rod 1087 is inserted into the through chamber 1086, and the inner surface of the through chamber 1086 is traced while rotating the polishing rod 1087.
  • the surface of the through chamber 1086 can be smoothed and smoothened by rotating the polishing rod 1087.
  • An abrasive is attached or applied to the cylindrical surface of the polishing rod 1086, and / or a liquid containing an abrasive is sprayed, or the polishing bar 1086 is rotated in the liquid. If it is performed on an ingot substrate, a large number of substrates can be processed together, and if it is performed individually after cutting the substrate, more precise polishing becomes possible. Since the polishing rod 1086 has a cylindrical shape, when the through chamber 1085 has a rectangular parallelepiped shape, it is difficult to polish the corner portion.
  • FIG. 21B is a diagram showing a method of transferring a pattern to the inner surface of the through chamber using a cylindrical transfer rod.
  • the transfer pattern 1089 is attached to the cylindrical transfer rod 1088, the cylindrical transfer rod 1088 is inserted into the through chamber 1086, and the transfer pattern 1089 attached to the cylindrical transfer rod 1088 is brought into contact with the inner surface of the through chamber 1086.
  • the transfer pattern 1089 is attached to the inner surface of the through chamber 1086 and transferred. Since the transfer pattern 1089 is formed to adhere to the periphery of the cylindrical transfer rod 1088, the pattern is transferred by rotating the surface of the cylindrical transfer rod 1088 against the inner surface of the through chamber 1086.
  • the transfer pattern 1089 is, for example, a conductor electrode / wiring pattern.
  • a conductor film is laminated on the cylindrical surface, a conductor film pattern is formed using a photolithographic method, and the cylindrical surface is applied to the inner surface of the penetration chamber.
  • the conductive film is attached to the surface of the through chamber by processing under conditions (for example, heat treatment) that the surface of the through chamber and the conductive film adhere with good adhesion.
  • the conductor film pattern on the cylindrical surface can be transferred to the penetration chamber surface.
  • a conductor film pattern is attached to the transfer sheet, and the transfer sheet is wound around a cylindrical transfer rod.
  • the conductor film pattern adhered to the transfer sheet is transferred to the surface of the through chamber while rotating by pressing the cylindrical transfer rod against the surface of the through chamber.
  • the transfer film is attached to the surface of the through-chamber while keeping the conductor film pattern on the inside and the transfer sheet on the outside and rotating the cylindrical transfer rod against the surface of the through-chamber, the transfer sheet is attached to the surface.
  • the conductive film pattern can also be attached to the surface of the through chamber. It can also transfer to the penetration chamber in an ingot board
  • the through chambers have the same shape (for example, the through chambers 1076 and 1077 in FIG. 20), a plurality of transfer rods can be attached to the support, and the transfer rods can be simultaneously inserted into the respective through chambers for simultaneous transfer. it can.
  • FIG. 21C is a diagram showing a method of forming conductor film electrode / wiring patterns 1092 and 1093 on a transfer plate having the same rectangular parallelepiped shape as that of the through chamber and transferring those patterns to the inside of the through chamber.
  • the transfer plate 1091 to which the conductive film patterns 1092 and 1093 are attached or the transfer plate 1091 to which the transfer sheet to which the conductive film patterns 1092 and 1093 are attached is inserted into the through chamber 1086 and is pressed against the inner surface of the through chamber 1086 for transfer. .
  • an electrode / wiring such as aluminum, Cu, or Au is formed on a high heat-resistant sheet such as polyimide, and a high heat-resistant thermosetting adhesive is attached to the opposite surface, and this adhesive surface is penetrated.
  • the conductive film pattern can be formed on the inner surface of the through chamber by attaching the transfer sheet to the inner surface and sandwiching the polyimide sheet on the inner surface of the through chamber by heat treatment.
  • a protective film is laminated by a CVD method or the like, or a protective film (which has good heat resistance) tape is attached by a transfer method.
  • a through chamber having heat resistance of about 300 ° C. to 500 ° C. can be manufactured.
  • the through chambers have the same shape (for example, the through chambers 1076 and 1077 in FIG. 20), a plurality of transfer rods can be attached to the support, and a transfer plate can be simultaneously inserted into each of the through chambers for simultaneous transfer. it can.
  • the mold shown in FIG. 17 and the like can be formed by a 3D printer, when the mold is made of the same material, it can be manufactured relatively easily. In this case, a complicated structure having a central hole and the like can also be manufactured by a 3D printer.
  • a substrate having a through chamber and a central hole can be easily manufactured with a 3D printer. If the 3D printer is used, the process of removing the molding material becomes unnecessary. After manufacturing the ingot, as described in FIG. 19 and the like, the substrate is divided into two at the middle part of the central hole, and after the necessary film formation and patterning are performed on the divided substrate, bonding is performed on the divided surface. Inventive structures can be made. If the conductor film, the insulating film, and the like are also produced with the 3D printer together with the substrate, the process of dividing becomes unnecessary.
  • a target substrate for example, an insulator such as Al, Cu, Ti, Cr, TiN, Ni, Au, Si, W, Mo, or SiO
  • a sputtering gas for example, Ar, N 2
  • the target material is sputtered from the target, and the target material can adhere to the side wall of the through chamber.
  • the apparatus is a sputtering apparatus.
  • a photosensitive film solution such as a resist solution can be inserted into a through chamber and the like, and ejected or sprayed to form a photosensitive film on the through chamber, the side surface or the bottom surface of the recess. If a device equipped with a heating element (such as a resistor or an infrared lamp) is inserted into a through chamber or the like, the photosensitive film can be pre-baked.
  • a heating element such as a resistor or an infrared lamp
  • a photosensitive film can be patterned on the through chamber, the side surface of the recess, or the bottom surface by inserting a device containing a developer into the through chamber or the like and spraying or spraying.
  • Photosensitive film CVD plasma is also possible with an insertion CVD apparatus.
  • a large number of the devices described above are mounted on separate substrates and inserted into a large number of through chambers in the substrate, so that patterning, film formation, and heat treatment in the large number of through chambers (photosensitive film application / adhesion and formation, photosensitive film) Exposure, development of photosensitive film, etching of various films, CVD of various films, PVD (sputtering, vapor deposition) of various films, various heat treatments, etc.) can be performed simultaneously.
  • a through chamber penetrating from the upper surface of the substrate to the lower surface of the substrate is formed in the substrate, an insulating film and a conductor film are stacked in the through chamber, and a conductor film electrode having a desired shape is manufactured and passed through the through chamber.
  • This is an ion implantation apparatus in which the trajectory of ions is controlled.
  • a synchrotron type or annular type (hereinafter referred to as annular type) accelerator using a high-frequency power source or a static (DC) voltage as an acceleration source is applied to a substrate type ion implantation method.
  • 22 is a plan view of the annular substrate ion implantation apparatus of the present invention viewed in parallel to the substrate surface.
  • Ions are generated in the ionization chamber 2112 (which may include a sample supply unit), and the ions are accelerated to a predetermined speed in the extraction electrode / acceleration chamber 2113.
  • the accelerated ions are sorted into desired ions in the mass separation chamber 2114, and the sorted ions are sent to the connection chamber 2115 that connects the synchrotron acceleration chamber 2117 and the mass separation chamber 2114.
  • a substrate partition wall having a central hole 2116 is disposed between the connection chamber 2115 and the annular acceleration chamber 2117, and ions traveling through the connection chamber 2115 pass through the central hole 2116 to form a linear through chamber of the annular acceleration chamber 2117. (High frequency or DC voltage) is entered into the acceleration chamber 21118-1.
  • the through chambers are connected in a ring shape, and ions circulate while accelerating in the annular passage 2118 that is the annular through chamber.
  • the annular passage 2118 is composed of two linear acceleration chambers 21118-1, 3 and circular acceleration chambers 2118-2, 4 of circular arc (semi-circular) shape connecting these two linear acceleration chambers 21118-1, 3. .
  • the linear acceleration chambers 21118-1 and 3118-3 are accelerated by applying a high frequency voltage. (Alternatively, the DC voltage acceleration described above may be used.)
  • Conductor film electrodes 2121 and 2122 are formed on two opposing through chamber side walls of the semicircular circular acceleration chamber 21118-2.
  • conductor film electrodes 2121 and 2122 formed on the two opposing through chamber side walls of the circular acceleration chamber 21118-2 are parallel to each other.
  • conductor film electrodes 2123 and 2124 are formed on the two opposing through chamber side walls of the semicircular circular acceleration chamber 2118-4.
  • Conductor film electrodes 2123 and 2124 formed on two opposing through chamber side walls of the circular acceleration chamber 2118-4 are parallel to each other.
  • the ions circulate around the circular passage 2118, and are accelerated and traveled to the left in FIG. 22 by applying a high-frequency voltage in the linear acceleration chamber 21118-1.
  • Radius R1 here, a circular orbit can be drawn with Lorentz force by applying a magnetic field from above and below
  • ions are accelerated to the right in FIG. 22 by applying a high-frequency voltage in the linear acceleration chamber 118-3.
  • Advancing and receiving a force of a constant electric field in the circular acceleration chamber 2118-4 to take a circular orbit (center orbit radius R1) here, a circular orbit can also be drawn by Lorentz force by applying a magnetic field from above and below), Enters the acceleration chamber 21118-1.
  • the central hole 2125 provided in the substrate partition arranged in the direction of the ion trajectory that travels straight through the linear acceleration chamber 21118-1. And enter the exit passage (penetrating chamber) 2126 and exit from the ion exit 2127.
  • the exit passage (penetrating chamber) 2126 of the ion exit (outgoing exit) 2127 has a scanner (scanning) portion 2128, and conductor film electrodes 2129-1 and 2129 are formed on two opposing substrate side walls.
  • ions are swung (scanned) left and right (in a direction parallel to the substrate surface) and emitted.
  • two conductor film electrodes are formed in a direction parallel to the substrate surface, and ions are swung up and down (in a direction perpendicular to the substrate surface) by the electric field between these electrodes ( Exit) Ions swung (scanned) vertically and horizontally are implanted into a wafer 2130 disposed at an end station or the like disposed on the ion emission side.
  • the communication chamber 2115 and the exit passage 2127 can be accelerated in the same manner as the acceleration chamber.
  • the ion trajectory can be scanned vertically and horizontally with the magnetic field.
  • ions can be scanned left and right (lateral direction), and by arranging coils and electromagnets on the side of the main substrate, ions can be scanned up and down.
  • an electric field and a magnetic field can be combined.
  • a substrate side wall plate having a central hole is arranged as needed, and each through chamber is partitioned (but connected by the central hole). Some parts are formed and an electric field is applied. Conductor film electrodes are also formed on the side surfaces of the substrate side wall plate having the central hole, and a high frequency voltage or an electrostatic field is applied to these conductor film electrodes to accelerate, decelerate, or converge ions. can do.
  • the main substrate 2111 is a conductive substrate (for example, a metal such as Al, Cu, Fe, Ni, Zn, Ti, Cr or an alloy containing these metals, conductive plastic, conductive carbon (conductive graphene and conductive carbon nanotubes are also included).
  • Conductive semiconductor for example, low resistance Si containing a high concentration impurity element
  • conductive ceramic for example, Si, Ge, C, compound semiconductor (for example, GaAs, InP, GaN, etc.) Elemental semiconductors, various multi-component semiconductors) ⁇ , insulator substrates (for example, glass, quartz, AlN, alumina, various plastics, various ceramics, various polymer substrates), and composite substrates thereof.
  • insulator substrates for example, glass, quartz, AlN, alumina, various plastics, various ceramics, various polymer substrates
  • an insulating film is interposed between them.
  • a first upper substrate is attached to the upper surface of the main substrate 2111 and a first lower substrate is attached to the lower surface. Accordingly, the through chamber formed in the main substrate 2111 is surrounded by the first upper substrate at the top, the first lower substrate at the bottom, and the side wall of the main substrate 111 at the side. Ions travel through the through chamber surrounded by these substrates. Since the upper substrate and the lower substrate form contact holes in the substrate and form a conductor film in the contact holes, an insulator is preferable. For example, glass, quartz, AlN, alumina, various plastics, various ceramics, and various polymers.
  • an insulating film for example, a SiOx film or a SiNy film
  • the through chamber formed in the main substrate 2111 is maintained at a predetermined pressure or lower by evacuating from an opening provided in the first upper substrate or the first lower substrate.
  • a gas or liquid for cleaning or purging the through chamber can be flowed from another opening (which can also be used for vacuuming).
  • the substrate may be a circular wafer or a rectangle (rectangle or square) as shown in FIG. A substrate with a size of 4 to 10 inches ⁇ or more can be used.
  • the length and width may be 10 cm to 1 m or more.
  • the substrate size can be selected according to the ion implantation function and capability.
  • the thickness of the main substrate is the same as that of the accelerator and the mass analyzer, but the thickness of the main substrate is the height of the through chamber. For example, it is 1 mm to 50 mm.
  • the size and thickness of the upper and lower substrates attached to the main substrate can be manufactured at 1 mm or less or 50 mm or more, as in the accelerator or mass analyzer.
  • the thickness is 0.05 mm to 1 mm. It may be 1 mm or more.
  • the mass separation chamber 2114 various methods such as a magnetic field type, an electric field type, a combination thereof, a quadrupole type, an ECR type, or an ion trap type may be used.
  • the ionization chamber 2113 the ionization chamber described above can be used.
  • externally ionized ions may be introduced and connected to the extraction electrode / acceleration chamber.
  • the acceleration chambers 2113, 2115, 2118-1, and 2118-3 can also use the linear acceleration chambers described above.
  • the circular acceleration chambers 2118-2 and 4 have electrodes on both side surfaces. However, if the electrodes are divided in the traveling direction or the vertical direction so that voltages can be individually applied to the electrodes, the electric fields in the circular acceleration chambers can be obtained.
  • the ion trajectory can be controlled by changing.
  • This circular acceleration chamber can also control the ion trajectory using a magnetic field. That is, if coils and electromagnets are arranged above and below the main substrate, the ion trajectory can be controlled by Lorentz force. Furthermore, if both electric and magnetic fields are used, more precise ion trajectories can be controlled.
  • Various schemes described in this specification are described in International Application PCT / JP2015 / 071538, and all the inventions and techniques described therein can be incorporated and applied in this specification. As in the case shown in FIG. 2, if the annular track surrounding the annular track shown in FIG. 22 is connected in the lateral direction (on the substrate), high-concentration ions can be generated more easily at high speed.
  • FIG. 2 if the annular track surrounding the annular track shown in FIG. 22 is connected in the lateral direction (on the substrate), high-concentration ions can be generated more easily at high speed.
  • the first-stage annular track 2140 is the same as the annular ion implantation apparatus shown in FIG. 22 and has an ionization chamber. However, the ion extraction line 2143 is a part of the first-stage annular track 2140 (so that it exits from the circular track). Connected to an opening (an opening having a center hole) 2144 provided in the second-stage annular track 2145. To do.
  • the ions entering the second annular orbit merge with the already rotating ions and accelerate while rotating, and the central hole 2146 of the substrate partition arranged in the direction of the ion trajectory traveling straight through the linear acceleration chamber. And then enters the exit passage (through chamber) 2147 and exits from the ion exit 2150.
  • the exit passage (penetrating chamber) 2147 of the ion outlet 2150 has a scanner unit 2148, and conductor film electrodes 2149-1 and 2149 are formed on two opposing substrate side walls, and these two conductor film electrodes 2149-1 are formed.
  • the ions are swung (scanned) and emitted from the left and right (in the direction parallel to the substrate surface) by the electric field between the two.
  • two conductor film electrodes are also formed in a direction parallel to the substrate surface, and ions are swung up and down (in a direction perpendicular to the substrate surface) by the electric field between these electrodes ( Exit) Ions swung (scanned) vertically and horizontally are implanted into a wafer 2151 disposed at an end station or the like disposed on the ion emission side.
  • the exit passage 2147 can be accelerated in the same manner as the acceleration chamber.
  • a magnetic field can be formed in the scanner unit 2148, the ion trajectory can be scanned vertically and horizontally with the magnetic field.
  • ions can be scanned left and right (lateral direction), and by arranging coils and electromagnets on the side of the main substrate, ions can be scanned up and down. Further, the third stage, the fourth stage,... And the multi-stage annular track can be simultaneously formed in the present invention. If a multi-stage annular orbit is used, ions of higher current can be produced at a higher speed.
  • an LSI chip can be mounted on the substrate 2111 and the voltage and current applied to each electrode and coil can be controlled, so that the ion trajectory can be controlled very precisely.
  • Each of the plurality of annular ion trajectories may have an emission part.
  • the n-th exit part and the (n + 1) -th ring ion trajectory intersect, but if the ion trajectory of the intersection part (which intersects with the (n-1) th or less exit part) is controlled by LSI or the like, ions interfere with each other. Can be suppressed.
  • the main substrate can be attached vertically at the crossing portion, and ions can be guided to the attached main substrate side.
  • An ion implantation apparatus using the substrate of the present invention is extremely small and lighter than conventional ones (the body size is, for example, 20 cm long, 20 cm wide, 1 cm thick or less, and a weight of 1.5 kg or less. Small and large substrates can be used).
  • FIG. 24 is an enlarged view (plan view parallel to the substrate) of the connection region between the ion emission line 2143 and the second-stage annular track 2145.
  • the ion emission line 243 is connected to the cavity 2159 of the second-stage annular track 2145 through the connection opening 2144.
  • Electrodes 2153 (2153-1, 2) and 2154 (2154-1, 2) are formed on the inner surface of the penetration chamber on both side surfaces (substrate side walls) 2152 (2152-1, 2) of the ion emission line 243. These electrodes 2153-1 and 2154-1 and 2154-1 and 2 are parallel electrodes, respectively.
  • the ions 2160 travel straight through the ion emission line 243, but when they come near the exit 2144 of the ion emission line 2143, the trajectory is bent by the electric field generated by these electrodes, and the cavity 2159 of the second annular orbit 2145 is formed. It merges in a direction as parallel as possible to the direction of the ions 2151 that advance.
  • the electrodes 2153 and 2154 provided in the vicinity of the exit 2144 of the ion emission line 243 are divided into several parts (in FIG. 24, it can be divided into two parts, but can be further divided).
  • the trajectory of 2160 can be changed arbitrarily and smoothly. Therefore, the voltage to these divided electrodes can be combined with the ions 2161 as much as possible by adjusting the (electric field).
  • the electrode 2156 (2156-1, 2156, 2 ) And 2158 (2158-1, 2).
  • a voltage is also applied to these parallel plate electrodes 2156 (2156-1, 2) and 2158 (2158-1, 2) to change the trajectory of the ions 2160 exiting from the exit (opening) 2144 of the ion emission line 2143.
  • the trajectory of the ions 2160 can be adjusted so that it can merge with the ions 2161 passing through the cavity 2159.
  • the ion trajectory can be precisely adjusted. Further, the parallel plate electrodes 2156 and 2158 can be divided more to control the ion trajectory more accurately. Further, the electrodes 2153, 2154 and 2156, 2158 can be divided in the substrate thickness direction, and the ion trajectory can be adjusted vertically and horizontally. Furthermore, if coils and electromagnets are arranged above and below the main substrate, a magnetic field can be generated in the thickness direction of the substrate, so that the ion trajectory can also be adjusted by these magnetic fields. Therefore, the ion trajectory can be further accurately adjusted using the electric field and the magnetic field.
  • the substrate type ion implantation apparatus of the present invention can be stacked in the vertical direction to form a multistage ion implantation apparatus. By using multiple stages, ions can be made at higher speed (high energy), and ions can be accumulated in each stage, so that high dose ion implantation can be performed.
  • FIG. 25 is a view showing a cross section of the orbit coupling portion of the ion implantation apparatus stacked in two stages.
  • the main substrate is attached on the lower substrate 2171, and the upper substrate 2172 is attached thereon.
  • the first-stage annular track 2170 has a cavity 2175 in which ions 2176 rotate.
  • Second-stage annular track 2180 has a cavity 2185 in which ions 2186 are rotating.
  • the first-stage annular track 2170 and the second-stage annular track 2180 are stacked, but the upper substrate opening 2177 of the first-stage annular track 2170 and the lower-substrate opening 2187 of the second-stage annular track 2180.
  • the cavity 2175 of the first-stage annular track 2170 and the cavity 2185 of the second-stage annular track 2180 are connected.
  • An electrode 2173 is formed on the upper surface of the lower substrate 2171 and an electrode 2174 is formed on the lower surface of the upper substrate 2172 behind the opening 2177 in the first stage annular track 2170 in the ion traveling direction. These electrodes 2173 and 2174 are parallel plate electrodes, and an electric field is generated between them to change the ion trajectory going up the ion trajectory 2176 upward to become an ion trajectory 2179 passing through the openings 2177 and 2187.
  • An electrode 2184 is formed on the upper surface of the lower substrate 2182 and an electrode 2183 is formed on the lower surface of the upper substrate 2181 in front of the opening 2187 of the second annular orbit 2180 in the ion traveling direction. These electrodes 2183 and 2184 are parallel plate electrodes and generate an electric field therebetween.
  • a coil or an electromagnet in a direction perpendicular to the substrate in this opening, a magnetic field can be applied in a direction parallel to the substrate (perpendicular to the paper surface) to change the ion trajectory upward.
  • the ion trajectory can be controlled more accurately. These controls can be performed using an LSI.
  • annular acceleration chamber 2118 is used as the acceleration chamber connected to the mass (sorting) separation chamber 2114.
  • a linear acceleration chamber (for example, 2118-1) may be connected.
  • the ionization chamber 2112 may be externally attached.
  • the external ionization chamber is connected to the line of the extraction electrode / acceleration chamber 2113, and ions generated in the ionization chamber are guided to the extraction electrode / acceleration chamber 2113.
  • FIG. 26 is a diagram illustrating an example of an RFQ (Radio Frequency Quadrouple) type linear accelerator.
  • a conductive cylindrical body 2193 having a cavity 2194 inside and opened at both ends is disposed in a cavity (penetrating chamber) 2191 formed in the substrate.
  • a quadrupole electrode 2197 is disposed in the cavity 2194 of the cylindrical body 2193.
  • the quadrupole electrodes 2197 and 2198 are, for example, four electrodes (vane electrodes) having four end portions formed in corrugated stripes in the length direction, four rod electrodes, and other electrodes, and are quadrupoles.
  • the four quadrupole electrodes 2197, 2197, and 2198, 2198 are arranged so as to be orthogonal to each other along the ion beam (acceleration axis) passing through the space surrounded by the electrodes 2197, 2198, and the opposing electrodes are respectively mountains and mountains, or valleys and valleys face each other, and adjacent quadrupole electrodes 2197, 2197 and 2198, 2198 separated from each other by 90 degrees are arranged so that mountains and valleys are alternately adjacent to each other. ing.
  • One pair of opposed electrodes 2197 and 2197 are electrically short-circuited to the cylindrical body 2193, and the other pair of opposed electrodes 2198 and 2198 are stemmed to the substrate 2188 and / or 2189 surrounding the cavity (penetrating chamber) 2191.
  • the cavity resonator is configured by being supported by 2196 and / or the supporting base 2195. High-frequency power is applied to the pair of electrodes 2197 and 2197 and the pair of electrodes 2198 and 2198 facing each other by the high-frequency introduction line 2199 connected to a predetermined position of the substrate surrounding the cavity 2191 so that the signs thereof are different from each other.
  • the RFQ linear accelerator configured as described above includes a conductor 2193 as an inner conductor and a substrate around a first coaxial line having a pair of electrodes 2197 and 2197 as inner conductors and a cylindrical body 2193 as an outer conductor.
  • a second coaxial line having 2188 and / or 2189 as an outer conductor is coupled to be folded.
  • FIG. 27 is a diagram showing a method of manufacturing the RFQ linear accelerator shown in FIG.
  • the diagram on the left is a schematic cross-sectional view in the longitudinal direction (parallel to the ion traveling direction), and the diagram on the right is a schematic cross-sectional view in the direction perpendicular thereto.
  • a conductor substrate 3002 is attached on the conductor substrate 3001. (FIG. 27A)
  • the material of these conductor substrates is, for example, a metal or alloy such as Al, Cu, Ni, Ti, or a low-resistance semiconductor doped with an impurity element at a high concentration (for example, Si). It is.
  • various bonding methods such as a direct bonding method such as a room temperature bonding method, a high temperature bonding method, a diffusion bonding method, or a bonding method using a low melting point alloy such as a conductive adhesive or solder can be used.
  • the conductor substrate 3001 and the conductor substrate 3002 may be made of different materials or the same kind of materials.
  • unnecessary portions of the conductor substrate 3002 are removed by using a photolithography method or the like to form through holes (penetrating chambers) 3003 (3003-1, 2, 3). This removal method includes etching (WET or dry), laser etching, and punching.
  • the thickness of the photosensitive film or the like is selected in consideration of the etching selection ratio between the photosensitive film or the like formed by the photolithography method and the conductor substrate 3002 that is an etching material. Although there may be side etching, vertical etching is desirable in order to form the mask pattern. In addition, it is desirable to perform etching under such an etching condition that the conductor substrate 3001 as a base material is not etched much. In the case of laser etching or punching, it can be performed without using a mask by a photolithography method or the like.
  • the through chamber 3003-1 is a portion that becomes the cavity 2194 inside the cylindrical body 2193 shown in FIG.
  • the conductive substrate 3002 can be patterned before adhering to the conductive substrate 3001, the portions 3002 (3002-1, 2, 3) to be left are side portions of the cylindrical body 2193 shown in FIG. If all the parts 3003-2 to be removed are removed, the parts 3002 (3002-1, 2, 3) that should be left are also removed, so a part must be left. However, since a punching method or a mold ingot method can be used, there is an advantage that the process is simplified. (FIG. 27B) Further, the conductive substrate 3001 and the conductive substrate 3002 may be formed as a single conductive substrate, and etching may be performed so that the cross-sectional shape becomes a U-shape. That is, in this case, the recess is formed without forming the through hole (chamber).
  • the substrate 3004 is attached to the conductor substrate 3001.
  • the substrate 3004 may be a conductor substrate.
  • a semiconductor substrate or an insulator substrate can be used, but after etching the substrate 3004, a conductor film is formed on the pattern 3004-1 (shown in FIG. 27D), Conduction is established between the substrate 3001 and the conductor substrate 3007 attached on the substrate 3004.
  • the substrate 3004 is preferably an insulator substrate.
  • the substrate 3004 when a semiconductor substrate or a conductor substrate is used as the substrate 3004, an insulating film is stacked on the conductor substrate 3001 or the substrate 3004 is etched, and then the pattern 3004-1 (FIG. 27D ) To form a conductive film so that the conductive substrate 3001 and the conductive substrate 3007 attached to the substrate 3004 are not electrically connected to each other.
  • the conductive substrate 3001 around the side surface portion 3002 (3002-1, 2, 3) of the cylindrical body 2193 is removed, and a through hole (through hole) is formed.
  • a chamber 3005 (3005-1, 2, 3, 4) is formed, whereby the periphery 3001-2 and the cylindrical portion 3001-1 of the conductive substrate 3001 are separated from each other, and the substrate 3004 supports the cylindrical body 2193. And a substrate surrounding the cavity 2191. Therefore, the substrate 3004 is etched using a photolithography method or the like to remove unnecessary portions and remove the through chamber 3006 (3006-1, 2,. These through chambers 3006 (3006-1, 2, 3, 4) become cavities 2191. The parts 3004-1 that are not removed become stems 2196, A portion 3004-2 surrounding the chamber 3006 (3006-1, 2, 3, 4) becomes a substrate surrounding the cavity 2191.
  • the method described above can be selected as an adhesion method.
  • Insulating adhesive is preferable when using the through chamber 3006 (3006-1, 2, 3, 4) is a cavity 2191 surrounding the cylindrical body 2103.
  • the through chamber 3006 (3006-1, 2, 3, 4) Is connected to a through hole (through chamber 3005 (3005-1, 2, 3, 4)).
  • a conductor substrate 3007 is attached on the substrate 3004.
  • the attaching method can be performed by the method described so far.
  • the conductor substrate 3007 serves as an outer conductor of the second coaxial line. Since the conductor substrate 3007 only needs to cover the accelerator portion, unnecessary portions are removed by etching or the like.
  • a conductor substrate 3007 from which unnecessary portions have been removed in advance may be attached to the substrate 3004. (FIG. 27 (e)) As a result, the upper half or the lower half of the RF linear accelerator was produced.
  • a conductor substrate 3001-1 that is a cylindrical body and 3002-1 to 3 that are side surfaces thereof are supported by a stem 3004-1, and the stem 3004-1 is connected to the conductor substrate 3007.
  • the entire size is adjusted so that the end faces 3008 of the cylindrical body 3002 can also be attached to each other. The method shown so far can also be used for these attachments.
  • the electrical contact between the quadrupole electrode 3009 and the cylindrical body or outer conductor substrate 3007 can be taken by forming a contact hole or a wiring layer through the acceleration chamber substrate 3010 or 3011 by the method described so far, or They can be taken by contacting them directly, providing a contact or wiring layer for direct connection, passing through a stem or a support base, or providing a wiring layer using a stem support base.
  • the quadrupole electrode 3008 can also be mounted by the method shown so far. (For example, the diagram and explanation shown in FIG. 26)
  • the ions 3014 exiting from the through chamber 3012 on the left side of the acceleration chamber into the cavity 3013 of the RF linear accelerator enter the cylindrical cavity 3015 and are converged and accelerated to penetrate the right side of the acceleration chamber.
  • the two stems 3004 for supporting the cylindrical body are described above and below, but one may be the support base 2195 shown in FIG. 26 or only one if it can be supported.
  • an RF linear accelerator can be manufactured with the substrate mold of the present invention extremely easily and accurately.
  • the support pedestal 2195 can be manufactured by a method similar to the method for forming the stem.
  • a conductor film can be stacked on the surface of the insulator substrate or the semiconductor substrate (in this case, in particular, the cavity inner surface) to ensure conductivity. .
  • FIG. 28 is a diagram showing another acceleration method (including IH (Interdigital H) type) (including APF (Alternating Phase Focus)) of the linear accelerator.
  • FIG. 28A is a diagram showing the configuration.
  • the accelerator has a large number of cylindrical electrodes (also called drift tubes, formed of a conductor) 3020.
  • the thickness of the i-th cylindrical electrode 3020-i from the ion entry direction is Mi, and the i-th cylindrical electrode 3020-i And the (i + 1) th cylindrical electrode 3020-i + 1th distance is Li.
  • the cylindrical electrode 3020 has a central hole 3023 in the central portion, and an ion beam 3025 passes through the central hole 3023.
  • the cylindrical electrode 3020 is connected to a substrate surrounding the cavity by a support stem 3024 in the cavity.
  • the cylindrical electrode 3020 is produced by separating it into two parts (3021.3022) in the vertical direction, and is attached to the end face 3026 thereof.
  • the cylindrical electrode is disposed substantially perpendicular to the ion beam.
  • a high frequency voltage is applied to each cylindrical electrode through a stem, and ions passing through the cylindrical electrode can be accelerated.
  • the inter-cylindrical electrode distance Li + Mi / 2 is determined and arranged in advance so as to be synchronized with the high frequency. Therefore, the ions that have circulated by the annular ion implantation apparatus are accelerated each time by this accelerator.
  • FIG. 28B illustrates a part of the manufacturing method of the structure illustrated in FIG. FIG. 28B corresponds to FIG. Since the process is almost the same as the method shown in FIG. 27, the same reference numerals are given, and different points will be mainly described.
  • the manufacturing methods of the conductor substrates 3001 and 3002 constituting the half 3021 (or 3022) of the drift tube 3020 are the same, and these can be formed as one substrate or can be formed of the same material.
  • a large number of drift tubes 3021 are arranged.
  • the substrate 3007 is an insulator
  • adhesion between the stem substrate 3004 and the insulator substrate 3007 is performed using an adhesive, a metal that can be adhered, or various bonding methods.
  • a contact hole 3031 for connection is formed in the stem 3004 in the insulator substrate 3007
  • a conductor film 3032 is stacked in the contact hole, and electrical connection with the stem 3004 is established.
  • the electrode 3033 connected to the contact hole is patterned.
  • the adhesive is a non-conductive adhesive, the adhesive exposed at the time of forming the contact hole is removed.
  • the contact hole 3031 and the conductor film 3032 may be formed on the insulator substrate 3007 before being attached to the stem substrate 3004.
  • the insulator substrate 3007 and the stem substrate 3004 are attached so that each stem is connected to each contact hole 3031. If an adhesive is used at this time, the conductive adhesive is used. The same thing as this is produced, and as shown in FIG.27 (f), the other half of the drift tube 3020 is adhered on both sides of a main board
  • every other electrode eg, 3033-i and 3033-i + 2
  • a high frequency phase is applied to accelerate ions through the drift tube 3020.
  • the conductive substrate 3007 is bonded to the stem 3004 of a drift tube (for example, 3033-i-1 and 3033-i + 1) that does not want to have conductivity with the conductive substrate 3007.
  • a drift tube for example, 3033-i-1 and 3033-i + 1
  • the adhesion on the opposite side to which it is attached should be conductive.
  • the drift tube connected to the conductor substrate 3007 arranged on the upper side and the drift tube connected to the conductor substrate 3007 arranged on the lower side can be arranged so as to be alternately conductive. Furthermore, a ridge substrate can be disposed between the conductor substrate and the stem 3004 so that the accelerating electric field can be generated uniformly over the entire cavity.
  • FIG. 30 shows another structure and manufacturing method of the drift tube 3020 shown in FIG. 28 as the structure of the acceleration cavity electrode 310 shown in FIG.
  • FIG. 30 is a diagram showing the structure of a charged particle linear accelerator. In FIG. 2, it can be used for 13 and 39, and can also be used alone or as a linear accelerator.
  • FIG. 2 it can be used for 13 and 39, and can also be used alone or as a linear accelerator.
  • FIG. 30A is a cross-sectional view in the thickness direction of the substrate (the second substrate (upper substrate) 92 is attached to the upper surface of the main substrate 91 and the third substrate (lower substrate) is attached to the lower surface). That is, FIG. 30B is a plan view parallel to the substrate surface, and FIG. 30C is a sectional view in the thickness direction (traveling direction of the acceleration cavity 99, that is, traveling direction of the charged particle G). Vertical direction).
  • the acceleration cavity 99 through which the charged particles G in the acceleration device pass passes through the second substrate (upper substrate) 92 above the through hole (chamber) 99 (width a1) formed in the main substrate (first substrate) 91 (thickness h1).
  • the lower part is attached by a third substrate (lower substrate) 93, and the internal through hole (acceleration cavity) 99 is an airtight space.
  • a ring electrode (a side wall of the through hole 99, a lower surface of the upper substrate 92, a lower surface of the lower substrate 93, and a continuous surface (electrically connected) is formed in the longitudinal direction (advancing direction of charged particles).
  • Electrodes) 94 are formed apart from each other. (94-1, 2,...) For example, in the annular electrode 94-1 in the through hole 99 having the depth h1 and the width a1, conductor electrodes 94S1 and 94S2 are formed on the side wall of the through hole 99.
  • a conductor electrode 94U is formed on the lower surface of the upper substrate 92, and a conductor electrode 94B is formed on the upper surface of the lower substrate 93.
  • These conductor electrodes 94S1, 94S2, 94U and 94B are electrically connected and have a length (acceleration cavity). 99 (longitudinal direction) k1, and the more accurate shape is a rectangular shape.
  • the thickness of the conductor electrode is t1 (assuming all are constant)
  • the distance b1 between the conductor electrodes 94S1 and 94S2 is a1-2t1
  • annular electrode 94-2 having a length k2 spaced apart by a distance j1
  • annular electrode 94-3 adjacent to the annular electrode 94-1 is an annular electrode 94-3 having a length k3 spaced apart by a distance j2.
  • a plurality of annular electrodes 94 are formed in the acceleration cavity 99.
  • the length of the i-th annular electrode 94-i is ki, and the distance from the next i + 1-th annular electrode 94- (i + 1) is ji.
  • each annular electrode 94 (94-i) formed on the inner surface of the main substrate 91 in the cavity 99 has a voltage applied from the outer electrodes 96 (96-i) and 98 (98-i) formed on the upper and lower substrates. Can be applied, but only one of them may be applied. Accordingly, either one of them may be used, but if they are simultaneously applied, the inside of the annular electrode 94 (94-i) is effectively at the same potential.
  • an acceleration cavity having a length of 15 cm may be produced.
  • ultrafast ions can be realized over a very short distance.
  • an electrode for applying a voltage having the same potential as the ions is arranged or a quadrupole magnetic field is applied. By combining these, ions having a desired speed can be obtained.
  • one or more openings 100 are formed in the upper substrate 92 and / or the lower substrate 93, and the cavity 99 is evacuated through the openings 100, an inert gas, or the like. The inside can be cleaned and purged.
  • the distance between the electrodes may be constant, and in the case of applying a high frequency voltage, the distance between the electrodes may be changed.
  • FIG. 29 is a diagram illustrating an acceleration method in another linear acceleration chamber.
  • ions traveling from the connection chamber 2115 or the circular acceleration chamber 21118-2 shown in FIG. 22 enter the linear acceleration chamber 21118-1, 3, a central hole 2139 (2139-1, 2,...)
  • the ions are accelerated by a high frequency electric field or an electrostatic field applied to the substrate side wall 2136 (2136-1, 2,...)
  • the conductor film 2132 is formed in the central hole 2139, Enter the circular acceleration chamber 218-1, 4.
  • ions circulate while accelerating, and are emitted when a predetermined speed (acceleration voltage) is reached.
  • a substrate side wall 2135 (2135-1, 2) between the through chambers, and ions or the like that have gone off the trajectory collide with the substrate side wall and cannot enter the adjacent chamber. Further, the substrate side wall 2135 (2135-1) is not attracted to the side surface of the substrate side wall electrode 2136-1, and proceeds through the central hole. A conductor film may also be formed on this 2135 (2135-1), and the same voltage as that of ions may be applied to focus the ions.
  • the conductor film formed on the substrate side wall 2136 formed in the linear acceleration chambers 21118-1 and 3118 is connected to the electrode / wiring 2134 on the substrate through the contact electrode / wiring 2133 formed on the upper and lower substrates 2108 and 2109.
  • Each of the substrate side wall electrodes 2136 (2136-1, 2,...) Is provided with an electrode / wiring 2134 on the substrate, and a voltage can be applied individually.
  • ) opposite to the ions is applied to the substrate sidewall electrode 2136-1 to accelerate the ions.
  • + ⁇ v1) slightly larger than this is applied to the adjacent substrate side wall electrode 2136-2 to further accelerate the substrate.
  • ions are accelerated more rapidly by applying a larger voltage (
  • a substrate side wall voltage to which a voltage having the same charge as the ions is applied is provided for convergence. This is repeated to accelerate the ions to a predetermined speed.
  • a substrate side wall without a conductive film (with a central hole) or a substrate side wall with a conductive film to which no voltage is applied (with a central hole) may be provided between the substrate side wall electrodes to prevent ion divergence.
  • the electrodes and wirings can be formed on the upper and lower substrates, the degree of freedom of voltage application increases. As described above, ions can be accelerated using an electrostatic field.
  • ions can be accelerated using a high-frequency electric field.
  • ions can be accelerated by applying the same high-frequency voltage to every other electrode and applying the same high-frequency voltage with a different phase to every other electrode to synchronize with the ion velocity.
  • Ions can also be accelerated by applying the same high-frequency voltage to every second electrode or every other m electrodes, and applying a high-frequency voltage so that the phase gradually changes between the electrodes. Since the substrate side wall electrode of the present invention has electrodes / wirings 2134 individually and vertically, it is possible to change the method of applying a high-frequency voltage according to the ion velocity, and to efficiently accelerate ions. it can.
  • FIG. 29B is a cross-sectional view taken along the line A1-A2 (perpendicular to the ion trajectory G), and a conductor film 2132 is laminated on the side surface of the central hole 2139.
  • FIG. 29C is also a cross-sectional view taken along the line A1-A2 (perpendicular to the ion trajectory G), but shows different substrate side walls.
  • a gap 2142-1, 2 is formed between the substrate side wall 2136 and the through-chamber side surface 2111 (2111-1, 2) of the main substrate 2111.
  • Conductive films 2143-1 and 2143-1 and 2143 are formed on the outer side surfaces of the substrate side wall 2136. These conductor films 2143-1 and 2143-2 are connected to the central hole conductor film 2132.
  • the gap (gap) 2142 makes the synchronization of the high-frequency electric field smoother. That is, efficiency is improved. Since the distance between the substrate side wall electrodes can be freely selected, it is easy to achieve high frequency synchronization.
  • the substrate side wall provided with the central hole has been developed so as to be produced, but it is needless to say that it is not necessary to provide it unless particularly necessary. Further, the size of the central hole may be close to the size of the through chamber if it is not necessary to make it extremely small.
  • the central hole size is appropriately selected within the range of 1/10 to a of a and 1/10 to b of b. It ’s fine.
  • the size of a may be 0.1 mm to 50 mm
  • the size of b may be 0.1 mm to 50 mm
  • appropriate values may be selected as appropriate. If it is not necessary to form a conductor film in the central hole, it may not be formed.
  • the present invention can be applied not only to an acceleration device, a mass spectrometer, and an ion implantation device, but also to individual elements and mechanisms constituting them. It can be used for all devices that use an acceleration mechanism.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Particle Accelerators (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Electron Tubes For Measurement (AREA)
PCT/JP2017/003678 2016-02-02 2017-02-02 超小型加速器および超小型質量分析装置および超小型イオン注入装置 Ceased WO2017135332A1 (ja)

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JP7225010B2 (ja) 2019-04-10 2023-02-20 株式会社東芝 イオン生成装置、方法及びプログラム
JP2024021159A (ja) * 2022-08-03 2024-02-16 三菱重工機械システム株式会社 加速空洞
CN116170933B (zh) * 2023-01-09 2023-09-05 中国科学院近代物理研究所 用于应用型等时性回旋加速器的磁场装置

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JPH0479141A (ja) * 1990-07-20 1992-03-12 Sharp Corp イオン注入装置
JP2002175771A (ja) * 2000-12-05 2002-06-21 Ulvac Japan Ltd イオン注入装置
JP2015185545A (ja) * 2014-03-21 2015-10-22 ブリティッシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニーＢｒｉｔｉｓｈ Ｔｅｌｅｃｏｍｍｕｎｉｃａｔｉｏｎｓ Ｐｕｂｌｉｃ Ｌｉｍｉｔｅｄ Ｃｏｍｐａｎｙ 印刷された能動デバイス
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Publication number Priority date Publication date Assignee Title
JP2019215778A (ja) * 2018-06-14 2019-12-19 株式会社アスコン サービス提供システム、広告関連サービス提供システム、ユーザ側設備及びユーザ側広告設備
JP7445240B2 (ja) 2018-06-14 2024-03-07 株式会社アスコン サービス提供システム及びユーザ側設備

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