WO2017133043A1 - 液晶显示面板的制作方法 - Google Patents

液晶显示面板的制作方法 Download PDF

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Publication number
WO2017133043A1
WO2017133043A1 PCT/CN2016/074623 CN2016074623W WO2017133043A1 WO 2017133043 A1 WO2017133043 A1 WO 2017133043A1 CN 2016074623 W CN2016074623 W CN 2016074623W WO 2017133043 A1 WO2017133043 A1 WO 2017133043A1
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Prior art keywords
liquid crystal
substrate
pedot
graphene
pss
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French (fr)
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兰松
李泳锐
胡韬
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/026,599 priority Critical patent/US20180046035A1/en
Publication of WO2017133043A1 publication Critical patent/WO2017133043A1/zh
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Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a liquid crystal display panel.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • Most of the TFT-LCDs on the market are backlight type liquid crystal display devices, which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to place liquid crystal molecules in two parallel glass substrates, and control the liquid crystal molecules to change direction by energizing or not the glass substrate, and refract the light of the backlight module to produce a picture.
  • a liquid crystal display panel is composed of a color filter substrate (CF), a thin film transistor (TFT) substrate, a liquid crystal (LC) layer sandwiched between a CF substrate and a TFT substrate, and a sealant frame (Sealant).
  • TFT-LCD displays the classification of liquid crystal-based modes of operation are: phase change (PC), twisted nematic (TN), super twisted nematic (STN), vertical alignment. (Vertical Alignment, VA), In Plane Switching (IPS), and the like.
  • a transparent conductive film is separately disposed on the CF substrate and the TFT substrate facing the liquid crystal layer. The main function of the transparent conductive film is to form an electric field between the CF substrate and the TFT substrate. Drives the liquid crystal molecules to deflect, thus achieving a bright and dark display.
  • a conventional transparent conductive film is an indium tin oxide (ITO) film prepared by a physical vapor deposition (PVD) method.
  • ITO indium tin oxide
  • PVD physical vapor deposition
  • the specific fabrication process is as follows: in the PVD device, a strong current bombards the ITO target, and a transparent conductive ITO film is deposited on the substrate.
  • the ITO film does not exhibit bending characteristics under a certain external force, which also limits its application in flexible panels and wearable devices.
  • the cost of indium has gradually increased. Therefore, it is of great significance and value to find ITO substitutes with high conductivity and light transmittance, simple preparation methods and abundant resources.
  • an alignment film is separately disposed on the TFT substrate and the CF substrate of the liquid crystal display panel. After the alignment film is in contact with the LC, the LC can generate a pretilt angle in a certain direction, thereby providing a load bearing angle to the liquid crystal molecules ( The pretilt angle has an important influence on the driving voltage, contrast, response time, and viewing angle of the TFT-LCD.
  • the material of the alignment film is usually made of polyimide (PI) material, which is mainly divided into a friction phase-matching PI material. And phase-matched PI materials, However, any alignment material has its own disadvantages. Among them, the friction phase-matching PI material forms an alignment film by rubbing alignment method.
  • the friction alignment method is a contact type mechanical friction on the surface of the polymer PI film with a flannel roller, and the energy provided by the friction polymer surface is high.
  • the molecular main chain is oriented by extension, thereby controlling the branch to interact with the LC, so that the LC is aligned in the direction of the pretilt angle; therefore, problems such as dust particles, static electricity, and brush marks are easily caused in the frictional alignment to reduce the process yield.
  • the optical phase-matching PI material forms an alignment film by photo-alignment technology.
  • the photo-alignment method utilizes photochemical reaction of the ultraviolet photopolymer monomer material to generate anisotropy, and the liquid crystal molecules and the surface of the alignment film are mutually branched.
  • the liquid crystal molecules are arranged along the direction of the maximum force defined by the light alignment.
  • the optical phase-matching PI material can solve the above problems, but the heat resistance and resistance are limited due to limited material properties. The aging is poor, and the ability to anchor the LC is also weak, which affects the quality of the panel.
  • the PI material itself has high polarity and high water absorption, storage and transportation are prone to deterioration, resulting in uneven phase distribution, and the PI material is expensive, and the process of forming a film on the TFT-LCD is complicated. This leads to an increase in panel costs.
  • An object of the present invention is to provide a method for fabricating a liquid crystal display panel by using a graphene/PEDOT:PSS composite transparent conductive film instead of a conventional ITO transparent conductive film on a TFT substrate and a CF substrate, and mixing a polarity in the liquid crystal mixture.
  • the material can replace the PI alignment film to achieve the effect of vertically orienting the liquid crystal molecules to prepare a liquid crystal display panel in which the PI alignment film can be omitted.
  • the present invention provides a method for fabricating a liquid crystal display panel, comprising the following steps:
  • Step 1 Providing a TFT substrate and a CF substrate, and forming a first conductive film and a second conductive film on one side of the TFT substrate and the CF substrate, respectively, wherein the first and second conductive films are graphene/PEDOT: PSS composite transparent conductive film;
  • Step 2 mixing a polar material into the liquid crystal material to obtain a liquid crystal mixture
  • the polar material has the structural formula A-B, wherein
  • A refers to one or more polar groups attached to B, which are primary, secondary, tertiary, -OH, -COOH, -SH, -Si (CH 3 ) ) 3 , or -CN;
  • Step 3 using the dropping method, the liquid crystal mixture obtained in the step 2 is dropped onto the first conductive film side of the TFT substrate or the second conductive film side of the CF substrate;
  • Step 4 vacuum-pairing the TFT substrate and the CF substrate to obtain a liquid crystal display panel; at this time, the polar material and the first conductive film on the TFT substrate and the second conductive film on the CF substrate are stronger.
  • the intermolecular force is arranged vertically on the surface of the TFT substrate and the CF substrate, thereby guiding the liquid crystal molecules in the liquid crystal material to be vertically aligned, thereby functioning as a liquid crystal alignment.
  • the content of the polar material is 0.1 to 5 wt%.
  • a plurality of ridge-like protrusions are respectively disposed on one side of the TFT substrate and the CF substrate provided on the one side of the first and second conductive films.
  • the step 1 specifically includes the following steps:
  • Step 11 The graphene powder and the aqueous surfactant are put into deionized water and ultrasonically dispersed according to a mass ratio of graphene powder, aqueous surfactant, and deionized water of 1:50 to 500:2000 to 100,000. Obtaining a graphene solution;
  • Step 12 the ratio of the graphene solution to a certain concentration of PEDOT:PSS solution is a ratio of 1:100 to 100:1 is mixed, and after sonication, a uniformly dispersed graphene/PEDOT:PSS mixed solution is obtained;
  • Step 13 Applying the graphene/PEDOT:PSS mixed solution on the TFT substrate and the CF substrate by a wet coating process to form a film to obtain a graphene/PEDOT:PSS film;
  • Step 14 The TFT substrate and the CF substrate after the film formation are washed with deionized water multiple times to remove the aqueous surfactant in the graphene/PEDOT:PSS film, thereby increasing the conductivity of the graphene/PEDOT:PSS film;
  • Step 15 Drying the graphene/PEDOT:PSS film to remove moisture in the film to obtain a dried graphene/PEDOT:PSS composite transparent conductive film, thereby obtaining the first on the side of the TFT substrate. a conductive film and a second conductive film on one side of the CF substrate.
  • the aqueous surfactant is sodium lauryl sulfate, ammonium lauryl sulfate, sodium dodecyl sulfate, sodium dodecylbenzenesulfonate or sodium tetradecyl sulfate.
  • Ultrasonic dispersion is performed by an ultrasonic system, the ultrasonic power is 50-400 W, and the ultrasonic time is 5-60 min.
  • the PEDOT:PSS solution is prepared from deionized water and PEDOT:PSS, and the mass percentage of PEDOT:PSS in the PEDOT:PSS solution is 1 to 100 wt%.
  • the wet coating process is spray coating, spin coating, roll coating, slit extrusion coating, dip coating, blade coating, gravure printing, inkjet printing or screen printing.
  • the step 13 is: placing the TFT substrate and the CF substrate on a constant temperature heating plate, and applying the graphene/PEDOT:PSS mixed solution to the spray coating method. Forming a film on the TFT substrate and the CF substrate to obtain a graphene/PEDOT:PSS film, and the temperature of the constant temperature heating plate is 80-120 ° C;
  • the step 13 is: applying the graphene/PEDOT:PSS mixed solution to the TFT substrate and the CF substrate. After coating, the TFT substrate and the CF substrate are quickly transferred to a constant temperature heating plate for baking for 3-10 minutes to form a film, and a graphene/PEDOT:PSS film is obtained.
  • the temperature range of the constant temperature heating plate is 80-140 ° C. .
  • the drying treatment process in the step 15 is natural drying, nitrogen drying or rapid drying under heating conditions of 80-120 °C.
  • the invention also provides a method for fabricating a liquid crystal display panel, comprising the following steps:
  • Step 1 Providing a TFT substrate and a CF substrate, and forming a first conductive film and a second conductive film on one side of the TFT substrate and the CF substrate, respectively, wherein the first and second conductive films are graphene/PEDOT: PSS composite transparent conductive film;
  • Step 2 mixing a polar material into the liquid crystal material to obtain a liquid crystal mixture
  • the polar material has the structural formula A-B, wherein
  • A refers to one or more polar groups attached to B, which are primary, secondary, tertiary, -OH, -COOH, -SH, -Si (CH 3 ) ) 3 , or -CN;
  • Step 3 using the dropping method, the liquid crystal mixture obtained in the step 2 is dropped onto the first conductive film side of the TFT substrate or the second conductive film side of the CF substrate;
  • Step 4 vacuum-pairing the TFT substrate and the CF substrate to obtain a liquid crystal display panel; at this time, the polar material and the first conductive film on the TFT substrate and the second conductive film on the CF substrate are stronger.
  • the intermolecular force is arranged vertically on the surface of the TFT substrate and the CF substrate, thereby guiding the liquid crystal molecules in the liquid crystal material to be vertically aligned, thereby functioning as a liquid crystal alignment;
  • the content of the polar material is 0.1 to 5 wt%
  • the TFT substrate and the CF substrate provided in the step 1 are provided with a plurality of ridge-shaped protrusions on one side of the first and second conductive films.
  • the present invention provides a method for fabricating a liquid crystal display panel, which uses a graphene/PEDOT:PSS composite transparent conductive film instead of a conventional ITO transparent conductive film on a TFT substrate and a CF substrate, and a liquid crystal in the liquid crystal display panel.
  • the obtained first group, the second group obtained by substituting a certain H atom in the alkyl group by F or Cl atom, or a certain H atom in the first group is substituted by F or Cl atom
  • the main role of the head group A is to make a large intermolecular force between the polar material and the graphene/PEDOT:PSS composite transparent conductive film, while the tail group B mainly acts similar to the action of the PI branch to the stereo
  • the obstacle mode makes the liquid crystal molecules vertically arranged, so that the PI alignment film can be used as a vertical alignment effect, thereby eliminating the PI alignment film process, reducing the production cost of the alignment film, and increasing the productivity.
  • FIG. 1 is a schematic flow chart of a method of fabricating a liquid crystal display panel of the present invention
  • step 2 is a schematic structural view of a polar material provided in step 2 of the method for fabricating a liquid crystal display panel of the present invention
  • FIG. 3 is a schematic view showing the interaction between a polar material and a graphene/PEDOT:PSS composite transparent conductive film in the method for fabricating a liquid crystal display panel of the present invention
  • step 4 is a schematic view of step 4 of a method of fabricating a liquid crystal display panel of the present invention.
  • the present invention provides a method for fabricating a liquid crystal display panel, including the following steps:
  • Step 1 providing a TFT substrate 10 and a CF substrate 20, and forming a first conductive film 31 and a second conductive film 32 on one side of the TFT substrate 10 and the CF substrate 20, respectively, the first and second conductive films 31 32 is a graphene/PEDOT:PSS composite transparent conductive film.
  • the manufactured liquid crystal display panel is a multi-domain vertical alignment (MVA) type liquid crystal display panel
  • the TFT substrate 10 and the CF substrate 20 provided in the step 2 are conventional MVA type liquid crystal display panels.
  • the TFT substrate and the CF substrate are provided with a plurality of ridge-shaped projections 21 on one side of the TFT substrate 10 and the CF substrate 20 on which the first and second conductive films 31 and 32 are formed.
  • the first conductive film 31 is used for the pixel electrode of the TFT substrate 10
  • the second conductive film 32 is used for the common electrode of the CF substrate 20.
  • Step 2 mixing the polar material 51 into the liquid crystal material 52 to obtain a liquid crystal mixture
  • the polar material 51 has the structural formula A-B, wherein
  • A refers to one or more polar groups attached to B, which are primary, secondary, tertiary, -OH, -COOH, -SH, -Si (CH 3 ) ) 3 , or -CN;
  • the structural formula of the polar material 51 is:
  • the content of the polar material 51 is 0.1 to 5 wt%.
  • the head group A is one or more polar groups, and its main function is to make the polar material 51 and the graphene/PEDOT:PSS composite transparent.
  • the conductive film generates strong molecular force and adsorbs on the graphene/PEDOT:PSS composite transparent conductive film; while the main function of the tail group B is similar to the action of the PI branch to make the liquid crystal molecules vertical in a steric barrier manner. arrangement.
  • the action mechanism of the polar material 51 and the graphene/PEDOT:PSS composite transparent conductive film is:
  • Graphene is a network structure in which a carbon atom is formed by SP2 hybridization, and a P orbital electron remains on the structure, and electrons on the benzene ring are generated with a polar material 51 containing a polar group. Strong intermolecular force;
  • PEDOT is poly(3,4-ethylenedioxythiophene), and the thiophene group itself is also an electron-rich group, and also generates a strong molecule with a polar group 51 containing a polar group.
  • PSS is a poly(styrenesulfonic acid) having both a benzene ring structure and a sulfonic acid group, and also generates a strong intermolecular force with the polar group 51 containing a polar group.
  • Step 3 The obtained liquid crystal mixture is dropped onto the first conductive film 31 side of the TFT substrate 10 or the second conductive film 32 side of the CF substrate 20 by One Drop Filling (ODF).
  • ODF One Drop Filling
  • Step 4 as shown in FIG. 4, the TFT substrate 10 and the CF substrate 20 are vacuum-paired to obtain a liquid crystal display panel; at this time, the polar material 51 and the first conductive film 31 and the CF substrate on the TFT substrate 10 are obtained.
  • a strong intermolecular force is generated between the second conductive films 32 on the 20 and vertically arranged on the surfaces of the TFT substrate 10 and the CF substrate 20, thereby guiding the liquid crystal molecules in the liquid crystal material 52 to be vertically aligned, thereby functioning as a liquid crystal alignment. effect.
  • the TFT substrate 10 and the CF substrate 20 are respectively provided with a plurality of ridge-like protrusions 21, the polar materials 51 located above the protrusions 21 are vertically arranged along the slope of the protrusions 21, Further, the liquid crystal molecules in the liquid crystal material 52 are guided to be vertically aligned along the slope of the protrusion 21 to cause the liquid crystal molecules to have a pretilt angle.
  • the step 1 specifically includes the following steps:
  • Step 11 The graphene powder and the aqueous surfactant are put into deionized water and ultrasonically dispersed according to a mass ratio of graphene powder, aqueous surfactant, and deionized water of 1:50 to 500:2000 to 100,000. Obtaining a graphene solution;
  • the aqueous surfactant is sodium lauryl sulfate, ammonium lauryl sulfate, sodium dodecyl sulfate, sodium dodecylbenzenesulfonate or sodium tetradecyl sulfate.
  • the ultrasound is used for ultrasonic dispersion, the ultrasonic power is 50-400 W, and the ultrasonic time is 5-60 min.
  • Step 12 mixing the graphene solution with a certain concentration of PEDOT:PSS solution at a mass ratio of 1:100 to 100:1, and after ultrasonication, obtaining a uniformly dispersed graphene/PEDOT:PSS mixed solution;
  • the PEDOT:PSS solution is prepared from deionized water and PEDOT:PSS, and the mass percentage of the PEDOT:PSS solution in the PEDOT:PSS solution is 1 to 100 wt%.
  • Step 13 Applying the graphene/PEDOT:PSS mixed solution to the TFT substrate 10 and the CF substrate 20 by a wet coating process to form a film to obtain a graphene/PEDOT:PSS film;
  • the wet coating process is spraying, spin coating, roll coating, slot-die, dip coating, knife coating, gravure printing, inkjet printing or screen printing.
  • the step 13 is: placing the TFT substrate 10 and the CF substrate 20 on a constant temperature heating plate, and spraying the graphene/PEDOT by spraying:
  • the PSS mixed solution was applied onto the TFT substrate 10 and the CF substrate 20 to form a film to obtain a graphene/PEDOT:PSS film having a temperature in the range of 80 to 120 °C.
  • the thickness of the film formation can be controlled by controlling the amount of the graphene/PEDOT:PSS mixed solution, the spraying pressure, the time, and the number of times.
  • the step 13 is: applying the graphene/PEDOT:PSS mixed solution to the TFT substrate 10 and CF.
  • the TFT substrate 10 and the CF substrate 20 are quickly transferred to a constant temperature heating plate for baking for 3-10 minutes to form a film, and a graphene/PEDOT:PSS film is obtained.
  • the temperature range of the constant temperature heating plate is 80-140 ° C.
  • the thickness of the film formation is controlled by controlling the amount of the graphene/PEDOT:PSS mixed solution, the spin coating time, the speed, and the number of times.
  • Step 14 The TFT substrate 10 and the CF substrate 20 after film formation are washed several times with deionized water to remove the aqueous surfactant in the graphene/PEDOT:PSS film, thereby increasing the conductivity of the graphene/PEDOT:PSS film. ;
  • Step 15 Drying the graphene/PEDOT:PSS film to remove moisture in the film to obtain a dried graphene/PEDOT:PSS composite transparent conductive film, thereby obtaining the first on the side of the TFT substrate 10 A conductive film 31 and a second conductive film 32 on the side of the CF substrate 20.
  • the drying treatment process is natural drying, nitrogen drying or rapid drying under heating conditions of 80-120 ° C.
  • the method for fabricating the liquid crystal display panel of the present invention uses a graphene/PEDOT:PSS composite transparent conductive film to replace the conventional ITO transparent conductive film on the TFT substrate and the CF substrate, and is added to the liquid crystal mixture of the liquid crystal display panel.
  • B refers to a linear or branched alkyl group having 5 to 20 C atoms, in the alkyl group
  • the first obtained by substituting a CH 2 group with a phenyl group, a cycloalkyl group, a -O-, a -CONH-, -COO-, -O-CO-, -CO- or -CH CH- group a second group obtained by substituting a certain H atom in the alkyl group with an F or Cl atom, or a second group obtained by substituting a certain H atom in the first group by an F or Cl atom a polar material capable of generating a large intermolecular force between the graphene/PEDOT:PSS composite transparent conductive film and vertically arranged on the graphene/PEDOT:PSS composite transparent conductive film, wherein the head group A main It is used to make

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Abstract

一种液晶显示面板的制作方法，包括利用石墨烯/PEDOT:PSS复合透明导电膜代替TFT基板（10）和CF基板（20）上传统的ITO透明导电膜，并在液晶显示面板的液晶材料（52）中加入极性材料（51）。该极性材料（51）的结构通式为A-B，其中头基A的作用是使得极性材料（51）与石墨烯/PEDOT:PSS复合透明导电膜之间产生较大的分子间作用力，尾基B的作用是类似于PI支链的作用以立体障碍的方式使液晶分子垂直排列，起到垂直配向的效果。该极性材料（51）能够与石墨烯/PEDOT:PSS复合透明导电膜之间产生较大的分子间作用力而垂直排列于TFT基板（10）和CF基板（20）的表面上，从而引导液晶分子垂直排列，进而可代替PI配向膜起到液晶配向的效果。可省去PI配向膜制程，降低配向膜的生产成本，提升产能。

Description

液晶显示面板的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种液晶显示面板的制作方法。
背景技术
薄膜晶体管液晶显示装置(TFT-LCD，Thin Film TransistorLiquid Crystal Display)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有市场上的TFT-LCD大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，通过玻璃基板通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜基板(CF，Color Filter)、薄膜晶体管(TFT)基板、夹于CF基板与TFT基板之间的液晶(LC，Liquid Crystal)层及密封胶框(Sealant)组成。在TFT-LCD显示器中，基于液晶的运作模式的分类有：相变(phase change，PC)、扭转向列(twisted nematic，TN)、超扭转向列(super twisted nematic，STN)、垂直配向型(Vertical Alignment，VA)、横向电场切换型(In plane Switching，IPS)等。针对常见的VA显示模式而言，需要在CF基板、TFT基板面向液晶层的一侧上同时分别设置一层透明导电膜，该透明导电膜的主要作用是在CF基板和TFT基板之间形成电场，驱动液晶分子偏转，从而实现亮暗的显示。
目前，传统的透明导电膜是由物理气相溅射(PVD)的方法制备出的氧化铟锡(ITO)薄膜。具体制作过程为：在PVD装置中，强电流轰击ITO靶材，在基板上沉积得到透明导电ITO薄膜。但是由于ITO本身氧化物的物理特性，ITO薄膜并不能在一定外力作用下展现弯折特性，这也限制了其在柔性面板，可穿戴设备上的应用。另一方面，随着国家政策的导向，铟的成本也逐渐涨高。所以寻找高导电性和透光率、制备方法简单、资源丰富的ITO替代品具有重要的意义和价值。
另外，在液晶显示面板的TFT基板及CF基板上还需分别设置一层配向膜，该配向膜与LC接触后，能够使得LC产生一定方向的预倾角，从而给液晶分子提供一个承载的角度(预倾角的大小对TFT-LCD的驱动电压、对比度、响应时间、视角等具有重要影响)，配向膜的材料通常选用聚酰亚胺(Polyimide，PI)材料，主要分为摩擦配相型PI材料和光配相型PI材料， 但是，无论哪种配向材料都有各自的缺点。其中，摩擦配相型PI材料通过摩擦配向法(Rubbing)形成配向膜，摩擦配向法是在高分子PI膜表面用绒布滚轮进行接触式的定向机械摩擦，摩擦高分子表面所提供的能量使高分子主链因延伸而定向排列，从而控制支链与LC相互作用，使LC按照预倾角的方向排列；因此，在摩擦配向时容易造成粉尘颗粒、静电残留、刷痕等问题降低工艺良率。而光配相型PI材料通过光配向法(photo-alignment technology)形成配向膜，光配向法是利用紫外光敏聚合物单体材料的光化学反应产生各向异性，液晶分子与配向膜表面支链相互作用，为达到能量最小的稳定状态，液晶分子沿着光配向所定义的受力最大的方向排列，该光配相型PI材料可以解决上述问题，但由于材料特性受限，耐热性和耐老化性不佳，同时锚定LC的能力也较弱，从而影响面板的品质。除此之外，PI材料本身就具有高极性和高吸水性，存储和运送容易造成变质而导致配相不均，并且PI材料价格昂贵，在TFT-LCD上成膜的工艺也较为复杂，导致面板成本提高。
发明内容
本发明的目的在于提供一种液晶显示面板的制作方法，利用石墨烯/PEDOT:PSS复合透明导电膜代替TFT基板和CF基板上传统的ITO透明导电膜，同时在液晶混合物中混入一种极性材料，可代替PI配向膜达到使得液晶分子垂直取向的效果从而制备出一种可省去PI配向膜的液晶显示面板。
为实现上述目的，本发明提供一种液晶显示面板的制作方法，包括以下步骤：
步骤1、提供TFT基板和CF基板，在所述TFT基板和CF基板的一侧上分别形成第一导电膜和第二导电膜，所述第一、第二导电膜均为石墨烯/PEDOT:PSS复合透明导电膜；
步骤2、将极性材料混入液晶材料中，得到液晶混合物；
所述极性材料的结构通式为A-B，其中，
A指的是与B相连的一个或多个极性基团，所述极性基团为伯胺基、仲胺基、叔胺基、-OH、-COOH、-SH、-Si(CH3)3、或-CN；
B指的是具有5～20个C原子的直链或支链化的烷基、该烷基中的某个CH2基团被苯基、环烷基、-O-、-CONH-、-COO-、-O-CO-、-CO-或-CH＝CH-基团所取代后得到的第一基团、该烷基中的某个H原子被F或 Cl原子取代后得到的第二基团、或者该第一基团中的某个H原子被F或Cl原子取代后得到的第三基团；
步骤3、采用滴下式注入法将所述步骤2得到的液晶混合物滴加到TFT基板的第一导电膜一侧上或者CF基板的第二导电膜一侧上；
步骤4、将TFT基板与CF基板进行真空对组，得到液晶显示面板；此时，所述极性材料与TFT基板上的第一导电膜及CF基板上的第二导电膜之间产生较强的分子间作用力而在TFT基板和CF基板的表面垂直排列，进而引导液晶材料中的液晶分子垂直排列，从而起到液晶配向的作用。
所述极性材料的结构式为：
Figure PCTCN2016074623-appb-000001
所述步骤2得到的液晶混合物中，所述极性材料的含量为0.1～5wt％。
所述步骤1中提供的TFT基板和CF基板预形成第一与第二导电膜的一侧上的一侧上分别设有数个屋脊状的凸起物。
所述步骤1具体包括以下步骤：
步骤11、按照石墨烯粉末、水系表面活性剂、及去离子水的质量比为1：50～500：2000～100000的比例将石墨烯粉末与水系表面活性剂投入去离子水中并进行超声分散，得到石墨烯溶液；
步骤12、将所述石墨烯溶液与一定浓度的PEDOT:PSS溶液按质量比为 1：100至100：1的比例混合，超声处理后，得到分散均匀的石墨烯/PEDOT:PSS混合溶液；
步骤13、采用湿法涂布工艺将所述石墨烯/PEDOT:PSS混合溶液分别涂布于TFT基板和CF基板上，进行成膜，得到石墨烯/PEDOT:PSS薄膜；
步骤14、将成膜后的TFT基板和CF基板使用去离子水多次冲洗，以去除石墨烯/PEDOT:PSS薄膜内的水系表面活性剂，增加石墨烯/PEDOT:PSS薄膜的导电性；
步骤15、对所述石墨烯/PEDOT:PSS薄膜进行干燥处理，将薄膜内的水分去除，得到干燥的石墨烯/PEDOT:PSS复合透明导电膜，即得到分别位于TFT基板一侧上的第一导电膜和CF基板一侧上的第二导电膜。
所述步骤11中，所述水系表面活性剂为十二烷基硫酸钠、十二烷基硫酸铵、十二烷基磺酸钠、十二烷基苯磺酸钠或十四烷基硫酸钠；采用超声仪进行超声分散，超声功率为50～400W，超声时间为5～60min。
所述步骤12中，所述PEDOT:PSS溶液由去离子水与PEDOT:PSS配制而成，且所述PEDOT:PSS溶液中PEDOT:PSS的质量百分比为1～100wt％。
所述步骤13中，所述湿法涂布工艺为喷涂、旋涂、辊涂、狭缝挤压涂布、浸涂、刮涂、凹版印刷、喷墨打印或者丝网印刷。
当所述湿法涂布工艺为喷涂时，所述步骤13为：将所述TFT基板和CF基板放置在恒温加热板上，采用喷涂方式将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板和CF基板上，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-120℃；
当所述湿法涂布工艺为旋涂、辊涂或者狭缝挤压涂布时，所述步骤13为：将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板和CF基板上，涂布后迅速将TFT基板和CF基板转移到恒温加热板上烘烤3-10min，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-140℃。
所述步骤15中的干燥处理工艺为自然干燥、氮气吹干或者在80-120℃加热条件下快速烘干。
本发明还提供一种液晶显示面板的制作方法，包括以下步骤：
步骤1、提供TFT基板和CF基板，在所述TFT基板和CF基板的一侧上分别形成第一导电膜和第二导电膜，所述第一、第二导电膜均为石墨烯/PEDOT:PSS复合透明导电膜；
步骤2、将极性材料混入液晶材料中，得到液晶混合物；
所述极性材料的结构通式为A-B，其中，
A指的是与B相连的一个或多个极性基团，所述极性基团为伯胺基、仲胺基、叔胺基、-OH、-COOH、-SH、-Si(CH3)3、或-CN；
B指的是具有5～20个C原子的直链或支链化的烷基、该烷基中的某个CH2基团被苯基、环烷基、-O-、-CONH-、-COO-、-O-CO-、-CO-或-CH＝CH-基团所取代后得到的第一基团、该烷基中的某个H原子被F或Cl原子取代后得到的第二基团、或者该第一基团中的某个H原子被F或Cl原子取代后得到的第三基团；
步骤3、采用滴下式注入法将所述步骤2得到的液晶混合物滴加到TFT基板的第一导电膜一侧上或者CF基板的第二导电膜一侧上；
步骤4、将TFT基板与CF基板进行真空对组，得到液晶显示面板；此时，所述极性材料与TFT基板上的第一导电膜及CF基板上的第二导电膜之间产生较强的分子间作用力而在TFT基板和CF基板的表面垂直排列，进而引导液晶材料中的液晶分子垂直排列，从而起到液晶配向的作用；
其中，所述极性材料的结构式为：
Figure PCTCN2016074623-appb-000002
其中，所述步骤2得到的液晶混合物中，所述极性材料的含量为0.1～5wt％；
其中，所述步骤1中提供的TFT基板和CF基板预形成第一与第二导电膜的一侧上分别设有数个屋脊状的凸起物。
本发明的有益效果：本发明提供一种液晶显示面板的制作方法，利用石墨烯/PEDOT:PSS复合透明导电膜代替TFT基板和CF基板上传统的ITO透明导电膜，并在液晶显示面板的液晶混合物中加入极性材料，该极性材料的结构通式为A-B，其中，A指的是与B相连的一个或多个极性基团，所述极性基团为伯胺基、仲胺基、叔胺基、-OH、-COOH、-SH、-Si(CH3)3、或-CN，B指的是具有5～20个C原子的直链或支链化的烷基、该烷基中的某个CH2基团被苯基、环烷基、-O-、-CONH-、-COO-、-O-CO-、-CO-或-CH＝CH-基团所取代后得到的第一基团、该烷基中的某个H原子被F或Cl原子取代后得到的第二基团、或者该第一基团中的某个H原子被F或Cl原子取代后得到的第三基团；该极性材料能够与石墨烯/PEDOT:PSS复合透明导电膜之间产生较大的分子间作用力而垂直排列于石墨烯/PEDOT:PSS复合透明导电膜上，其中头基A的主要作用是使得极性材料与石墨烯/PEDOT:PSS复合透明导电膜之间产生较大的分子间作用力，而尾基B主要作用是类似于PI支链的作用以立体障碍的方式使液晶分子垂直排列，从而可以代替PI配向膜起到垂直配向的效果，进而省去PI配向膜制程，降低配向膜的生产成本，提升产能。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的液晶显示面板的制作方法的流程示意图；
图2为本发明的液晶显示面板的制作方法的步骤2中所提供的极性材料的结构示意图；
图3为本发明的液晶显示面板的制作方法中极性材料与石墨烯/PEDOT:PSS复合透明导电膜之间相互作用的示意图；
图4为本发明的液晶显示面板的制备方法的步骤4的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明 的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种液晶显示面板的制作方法，包括以下步骤：
步骤1、提供TFT基板10和CF基板20，在所述TFT基板10和CF基板20的一侧上分别形成第一导电膜31和第二导电膜32，所述第一、第二导电膜31、32均为石墨烯/PEDOT:PSS复合透明导电膜。
具体的，所制作的液晶显示面板为多畴垂直取向(Multi-domain Vertical Alignment，MVA)型液晶显示面板，所述步骤2中提供的TFT基板10和CF基板20为传统的MVA型液晶显示面板的TFT基板和CF基板，所述TFT基板10和CF基板20预形成第一与第二导电膜31、32的一侧上分别设有数个屋脊状的凸起物21。
具体的，所述第一导电膜31用于TFT基板10的像素电极，所述第二导电膜32用于CF基板20的公共电极。
步骤2、将极性材料51混入液晶材料52中，得到液晶混合物；
所述极性材料51的结构通式为A-B，其中，
A指的是与B相连的一个或多个极性基团，所述极性基团为伯胺基、仲胺基、叔胺基、-OH、-COOH、-SH、-Si(CH3)3、或-CN；
B指的是具有5～20个C原子的直链或支链化的烷基、该烷基中的某个CH2基团被苯基、环烷基、-O-、-CONH-、-COO-、-O-CO-、-CO-或-CH＝CH-基团所取代后得到的第一基团、该烷基中的某个H原子被F或Cl原子取代后得到的第二基团、或者该第一基团中的某个H原子被F或Cl原子取代后得到的第三基团。
优选的，该极性材料51的结构式为：
Figure PCTCN2016074623-appb-000003
Figure PCTCN2016074623-appb-000004
具体的，所述步骤2得到的液晶混合物中，所述极性材料51的含量为0.1～5wt％。
具体的，如图2-3所示，所述极性材料51中，头基A为一个或多个极性基团，其主要作用是使极性材料51与石墨烯/PEDOT:PSS复合透明导电膜之间产生较强的分子作用力而吸附在石墨烯/PEDOT:PSS复合透明导电膜上；而尾基B的主要作用是类似于PI支链的作用以立体障碍的方式使液晶分子垂直排列。
具体的，该极性材料51与石墨烯/PEDOT:PSS复合透明导电膜的作用机理为：
(1)石墨烯是一种碳原子以SP2杂化形成的网状结构，其结构上剩余一个P轨道电子，其内的苯环上的电子会与含有极性基团的极性材料51产生较强的分子间作用力；
(2)PEDOT为聚(3,4-亚乙二氧基噻吩)，其内的噻吩基团本身也是富电子基团，也会与含有极性基团的极性材料51产生较强的分子间作用力；
(3)PSS为聚(苯乙烯磺酸)，既含有苯环结构，又含有磺酸基，也会与含有极性基团的极性材料51产生较强的分子间作用力。
步骤3、采用滴下式注入法(One Drop Filling，ODF)将得到的液晶混合物滴加到TFT基板10的第一导电膜31一侧或者CF基板20的第二导电膜32一侧上。
步骤4、如图4所示，将TFT基板10与CF基板20进行真空对组，得到液晶显示面板；此时，所述极性材料51与TFT基板10上的第一导电膜31及CF基板20上的第二导电膜32之间产生较强的分子间作用力而在TFT基板10和CF基板20的表面垂直排列，进而引导液晶材料52中的液晶分子垂直排列，从而起到液晶配向的作用。进一步的，由于所述TFT基板10和CF基板20上均设有数个屋脊状的凸起物21，从而使得位于凸起物21上方的极性材料51沿着凸起物21的斜面垂直排列，进而引导液晶材料52中的液晶分子沿着凸起物21的斜面垂直排列，使液晶分子产生预倾角。
具体的，所述步骤1具体包括以下步骤：
步骤11、按照石墨烯粉末、水系表面活性剂、及去离子水的质量比为1：50～500：2000～100000的比例将石墨烯粉末与水系表面活性剂投入去离子水中并进行超声分散，得到石墨烯溶液；
具体的，所述水系表面活性剂为十二烷基硫酸钠、十二烷基硫酸铵、十二烷基磺酸钠、十二烷基苯磺酸钠或十四烷基硫酸钠。
具体的，采用超声仪进行超声分散，超声功率为50～400W，超声时间为5～60min。
步骤12、将所述石墨烯溶液与一定浓度的PEDOT:PSS溶液按质量比为1：100至100：1的比例混合，超声处理后，得到分散均匀的石墨烯/PEDOT:PSS混合溶液；
具体的，所述PEDOT:PSS溶液由去离子水与PEDOT:PSS配制而成，且所述PEDOT:PSS溶液中PEDOT:PSS溶液的质量百分比为1～100wt％。
步骤13、采用湿法涂布工艺将所述石墨烯/PEDOT:PSS混合溶液分别涂布于TFT基板10和CF基板20上，进行成膜，得到石墨烯/PEDOT:PSS薄膜；
具体的，所述湿法涂布工艺为喷涂、旋涂、辊涂、狭缝挤压涂布(slot-die)、浸涂、刮涂、凹版印刷、喷墨打印或者丝网印刷等方式。
具体地，当所述湿法涂布工艺为喷涂时，所述步骤13为：将所述TFT基板10和CF基板20一直放置在恒温加热板上，采用喷涂方式将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板10和CF基板20上，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-120℃。
具体的，采用喷涂工艺时，可以通过控制石墨烯/PEDOT:PSS混合溶液的用量，喷涂压力、时间和次数等因素来控制成膜的厚度。
当所述湿法涂布工艺为旋涂、辊涂或者狭缝挤压涂布时，所述步骤13为：将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板10和CF基板20上，涂布后迅速将TFT基板10和CF基板20转移到恒温加热板上烘烤3-10min，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-140℃。
具体的，采用旋涂工艺时，通过控制石墨烯/PEDOT:PSS混合溶液的用量，旋涂时间、速度和次数等因素来控制成膜的厚度。
步骤14、将成膜后的TFT基板10和CF基板20使用去离子水多次冲洗，以去除石墨烯/PEDOT:PSS薄膜内的水系表面活性剂，增加石墨烯/PEDOT:PSS薄膜的导电性；
步骤15、对所述石墨烯/PEDOT:PSS薄膜进行干燥处理，将薄膜内的水分去除，得到干燥的石墨烯/PEDOT:PSS复合透明导电膜，即得到分别位于TFT基板10一侧上的第一导电膜31和CF基板20一侧上的第二导电膜32。
具体的，所述干燥处理工艺为自然干燥、氮气吹干或者在80-120℃加热条件下快速烘干。
综上所述，本发明的液晶显示面板的制作方法，利用石墨烯/PEDOT:PSS复合透明导电膜代替TFT基板和CF基板上传统的ITO透明导电膜，并在液晶显示面板的液晶混合物中加入极性材料，该极性材料的结构通式为A-B，其中，A指的是与B相连的一个或多个极性基团，所述极性基团为伯胺基、仲胺基、叔胺基、-OH、-COOH、-SH、-Si(CH3)3、或-CN，B指的是具有5～20个C原子的直链或支链化的烷基、该烷基中的某个CH2基团被苯基、环烷基、-O-、-CONH-、-COO-、-O-CO-、-CO-或-CH＝CH-基团所取代后得到的第一基团、该烷基中的某个H原子被F或Cl原子取代后得到的第二基团、或者该第一基团中的某个H原子被F或Cl原子取代后得到的第二基团；该极性材料能够与石墨烯/PEDOT:PSS复合透明导电膜之间产生较大的分子间作用力而垂直排列于石墨烯/PEDOT:PSS复合透明导电膜上，其中头基A的主要作用是使得极性材料与石墨烯/PEDOT:PSS复合透明导电膜之间产生较大的分子间作用力，而尾基B主要作用是类似于PI支链的作用以立体障碍的方式使液晶分子垂直排列，从而可以代替PI配向膜起到垂直配向的效果，进而省去PI配向膜制程，降低配向膜的生产成本，提升产能。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (17)

  1. 一种液晶显示面板的制作方法，包括以下步骤：
    步骤1、提供TFT基板和CF基板，在所述TFT基板和CF基板的一侧上分别形成第一导电膜和第二导电膜，所述第一、第二导电膜均为石墨烯/PEDOT:PSS复合透明导电膜；
    步骤2、将极性材料混入液晶材料中，得到液晶混合物；
    所述极性材料的结构通式为A-B，其中，
    A指的是与B相连的一个或多个极性基团，所述极性基团为伯胺基、仲胺基、叔胺基、-OH、-COOH、-SH、-Si(CH3)3、或-CN；
    B指的是具有5～20个C原子的直链或支链化的烷基、该烷基中的某个CH2基团被苯基、环烷基、-O-、-CONH-、-COO-、-O-CO-、-CO-或-CH＝CH-基团所取代后得到的第一基团、该烷基中的某个H原子被F或Cl原子取代后得到的第二基团、或者该第一基团中的某个H原子被F或Cl原子取代后得到的第三基团；
    步骤3、采用滴下式注入法将所述步骤2得到的液晶混合物滴加到TFT基板的第一导电膜一侧上或者CF基板的第二导电膜一侧上；
    步骤4、将TFT基板与CF基板进行真空对组，得到液晶显示面板；此时，所述极性材料与TFT基板上的第一导电膜及CF基板上的第二导电膜之间产生较强的分子间作用力而在TFT基板和CF基板的表面垂直排列，进而引导液晶材料中的液晶分子垂直排列，从而起到液晶配向的作用。
  2. 如权利要求1所述的液晶显示面板的制作方法，其中，所述极性材料的结构式为：
    Figure PCTCN2016074623-appb-100001
    Figure PCTCN2016074623-appb-100002
  3. 如权利要求1所述的液晶显示面板的制作方法，其中，所述步骤2得到的液晶混合物中，所述极性材料的含量为0.1～5wt％。
  4. 如权利要求1所述的液晶显示面板的制作方法，其中，所述步骤1中提供的TFT基板和CF基板预形成第一与第二导电膜的一侧上分别设有数个屋脊状的凸起物。
  5. 如权利要求1所述的液晶显示面板的制作方法，其中，所述步骤1具体包括以下步骤：
    步骤11、按照石墨烯粉末、水系表面活性剂、及去离子水的质量比为1：50～500：2000～100000的比例将石墨烯粉末与水系表面活性剂投入去离子水中并进行超声分散，得到石墨烯溶液；
    步骤12、将所述石墨烯溶液与一定浓度的PEDOT:PSS溶液按质量比为1：100至100：1的比例混合，超声处理后，得到分散均匀的石墨烯/PEDOT:PSS混合溶液；
    步骤13、采用湿法涂布工艺将所述石墨烯/PEDOT:PSS混合溶液分别涂布于TFT基板和CF基板上，进行成膜，得到石墨烯/PEDOT:PSS薄膜；
    步骤14、将成膜后的TFT基板和CF基板使用去离子水多次冲洗，以去除石墨烯/PEDOT:PSS薄膜内的水系表面活性剂，增加石墨烯/PEDOT:PSS薄膜的导电性；
    步骤15、对所述石墨烯/PEDOT:PSS薄膜进行干燥处理，将薄膜内的水分去除，得到干燥的石墨烯/PEDOT:PSS复合透明导电膜，即得到分别位于TFT基板一侧上的第一导电膜和CF基板一侧上的第二导电膜。
  6. 如权利要求5所述的液晶显示面板的制作方法，其中，所述步骤11中，所述水系表面活性剂为十二烷基硫酸钠、十二烷基硫酸铵、十二烷基磺酸钠、十二烷基苯磺酸钠或十四烷基硫酸钠；采用超声仪进行超声分散，超声功率为50～400W，超声时间为5～60min。
  7. 如权利要求5所述的液晶显示面板的制作方法，其中，所述步骤12中，所述PEDOT:PSS溶液由去离子水与PEDOT:PSS配制而成，且所述PEDOT:PSS溶液中PEDOT:PSS的质量百分比为1～100wt％。
  8. 如权利要求5所述的液晶显示面板的制作方法，其中，所述步骤13中，所述湿法涂布工艺为喷涂、旋涂、辊涂、狭缝挤压涂布、浸涂、刮涂、凹版印刷、喷墨打印或者丝网印刷。
  9. 如权利要求8所述的液晶显示面板的制作方法，其中，当所述湿法涂布工艺为喷涂时，所述步骤13为：将所述TFT基板和CF基板放置在恒温加热板上，采用喷涂方式将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板和CF基板上，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-120℃；
    当所述湿法涂布工艺为旋涂、辊涂或者狭缝挤压涂布时，所述步骤13为：将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板和CF基板上，涂布后迅速将TFT基板和CF基板转移到恒温加热板上烘烤3-10min，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-140℃。
  10. 如权利要求5所述的液晶显示面板的制作方法，其中，所述步骤15中的干燥处理工艺为自然干燥、氮气吹干或者在80-120℃加热条件下快速烘干。
  11. 一种液晶显示面板的制作方法，包括以下步骤：
    步骤1、提供TFT基板和CF基板，在所述TFT基板和CF基板的一侧上分别形成第一导电膜和第二导电膜，所述第一、第二导电膜均为石墨烯/PEDOT:PSS复合透明导电膜；
    步骤2、将极性材料混入液晶材料中，得到液晶混合物；
    所述极性材料的结构通式为A-B，其中，
    A指的是与B相连的一个或多个极性基团，所述极性基团为伯胺基、仲胺基、叔胺基、-OH、-COOH、-SH、-Si(CH3)3、或-CN；
    B指的是具有5～20个C原子的直链或支链化的烷基、该烷基中的某个CH2基团被苯基、环烷基、-O-、-CONH-、-COO-、-O-CO-、-CO-或-CH＝CH-基团所取代后得到的第一基团、该烷基中的某个H原子被F或Cl原子取代后得到的第二基团、或者该第一基团中的某个H原子被F或Cl原子取代后得到的第三基团；
    步骤3、采用滴下式注入法将所述步骤2得到的液晶混合物滴加到TFT 基板的第一导电膜一侧上或者CF基板的第二导电膜一侧上；
    步骤4、将TFT基板与CF基板进行真空对组，得到液晶显示面板；此时，所述极性材料与TFT基板上的第一导电膜及CF基板上的第二导电膜之间产生较强的分子间作用力而在TFT基板和CF基板的表面垂直排列，进而引导液晶材料中的液晶分子垂直排列，从而起到液晶配向的作用；
    其中，所述极性材料的结构式为：
    Figure PCTCN2016074623-appb-100003
    其中，所述步骤2得到的液晶混合物中，所述极性材料的含量为0.1～5wt％；
    其中，所述步骤1中提供的TFT基板和CF基板预形成第一与第二导电膜的一侧上分别设有数个屋脊状的凸起物。
  12. 如权利要求11所述的液晶显示面板的制作方法，其中，所述步骤1具体包括以下步骤：
    步骤11、按照石墨烯粉末、水系表面活性剂、及去离子水的质量比为1：50～500：2000～100000的比例将石墨烯粉末与水系表面活性剂投入去离子水中并进行超声分散，得到石墨烯溶液；
    步骤12、将所述石墨烯溶液与一定浓度的PEDOT:PSS溶液按质量比为1：100至100：1的比例混合，超声处理后，得到分散均匀的石墨烯 /PEDOT:PSS混合溶液；
    步骤13、采用湿法涂布工艺将所述石墨烯/PEDOT:PSS混合溶液分别涂布于TFT基板和CF基板上，进行成膜，得到石墨烯/PEDOT:PSS薄膜；
    步骤14、将成膜后的TFT基板和CF基板使用去离子水多次冲洗，以去除石墨烯/PEDOT:PSS薄膜内的水系表面活性剂，增加石墨烯/PEDOT:PSS薄膜的导电性；
    步骤15、对所述石墨烯/PEDOT:PSS薄膜进行干燥处理，将薄膜内的水分去除，得到干燥的石墨烯/PEDOT:PSS复合透明导电膜，即得到分别位于TFT基板一侧上的第一导电膜和CF基板一侧上的第二导电膜。
  13. 如权利要求12所述的液晶显示面板的制作方法，其中，所述步骤11中，所述水系表面活性剂为十二烷基硫酸钠、十二烷基硫酸铵、十二烷基磺酸钠、十二烷基苯磺酸钠或十四烷基硫酸钠；采用超声仪进行超声分散，超声功率为50～400W，超声时间为5～60min。
  14. 如权利要求12所述的液晶显示面板的制作方法，其中，所述步骤12中，所述PEDOT:PSS溶液由去离子水与PEDOT:PSS配制而成，且所述PEDOT:PSS溶液中PEDOT:PSS的质量百分比为1～100wt％。
  15. 如权利要求12所述的液晶显示面板的制作方法，其中，所述步骤13中，所述湿法涂布工艺为喷涂、旋涂、辊涂、狭缝挤压涂布、浸涂、刮涂、凹版印刷、喷墨打印或者丝网印刷。
  16. 如权利要求15所述的液晶显示面板的制作方法，其中，当所述湿法涂布工艺为喷涂时，所述步骤13为：将所述TFT基板和CF基板放置在恒温加热板上，采用喷涂方式将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板和CF基板上，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-120℃；
    当所述湿法涂布工艺为旋涂、辊涂或者狭缝挤压涂布时，所述步骤13为：将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板和CF基板上，涂布后迅速将TFT基板和CF基板转移到恒温加热板上烘烤3-10min，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-140℃。
  17. 如权利要求12所述的液晶显示面板的制作方法，其中，所述步骤15中的干燥处理工艺为自然干燥、氮气吹干或者在80-120℃加热条件下快速烘干。
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