CN105527757B - 液晶显示面板的制作方法 - Google Patents

液晶显示面板的制作方法 Download PDF

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CN105527757B
CN105527757B CN201610071589.3A CN201610071589A CN105527757B CN 105527757 B CN105527757 B CN 105527757B CN 201610071589 A CN201610071589 A CN 201610071589A CN 105527757 B CN105527757 B CN 105527757B
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liquid crystal
pedot
pss
graphene
substrates
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CN105527757A (zh
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兰松
李泳锐
胡韬
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201610071589.3A priority Critical patent/CN105527757B/zh
Priority to PCT/CN2016/074623 priority patent/WO2017133043A1/zh
Priority to US15/026,599 priority patent/US20180046035A1/en
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Abstract

本发明提供一种液晶显示面板的制作方法，利用石墨烯/PEDOT:PSS复合透明导电膜代替TFT基板和CF基板上传统的ITO透明导电膜，并在液晶显示面板的液晶混合物中加入极性材料，该极性材料的结构通式为A‑B，其中，头基A的主要作用是使得极性材料与石墨烯/PEDOT:PSS复合透明导电膜之间产生较大的分子间作用力，而尾基B的主要作用是类似于PI支链的作用以立体障碍的方式使液晶分子垂直排列，起到垂直配向的效果；即该极性材料能够与石墨烯/PEDOT:PSS复合透明导电膜之间产生较大的分子间作用力而垂直排列于TFT基板和CF基板的表面上，从而引导液晶分子垂直排列，进而可代替PI配向膜起到液晶配向的效果，省去PI配向膜制程，降低配向膜的生产成本，提升产能。

Description

液晶显示面板的制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种液晶显示面板的制作方法。
背景技术
薄膜晶体管液晶显示装置(TFT-LCD，Thin Film TransistorLiquid CrystalDisplay)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有市场上的TFT-LCD大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，通过玻璃基板通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜基板(CF，Color Filter)、薄膜晶体管(TFT)基板、夹于CF基板与TFT基板之间的液晶(LC，Liquid Crystal)层及密封胶框(Sealant)组成。在TFT-LCD显示器中，基于液晶的运作模式的分类有：相变(phase change，PC)、扭转向列(twistednematic，TN)、超扭转向列(super twisted nematic，STN)、垂直配向型(VerticalAlignment，VA)、横向电场切换型(In plane Switching，IPS)等。针对常见的VA显示模式而言，需要在CF基板、TFT基板面向液晶层的一侧上同时分别设置一层透明导电膜，该透明导电膜的主要作用是在CF基板和TFT基板之间形成电场，驱动液晶分子偏转，从而实现亮暗的显示。
目前，传统的透明导电膜是由物理气相溅射(PVD)的方法制备出的氧化铟锡(ITO)薄膜。具体制作过程为：在PVD装置中，强电流轰击ITO靶材，在基板上沉积得到透明导电ITO薄膜。但是由于ITO本身氧化物的物理特性，ITO薄膜并不能在一定外力作用下展现弯折特性，这也限制了其在柔性面板，可穿戴设备上的应用。另一方面，随着国家政策的导向，铟的成本也逐渐涨高。所以寻找高导电性和透光率、制备方法简单、资源丰富的ITO替代品具有重要的意义和价值。
另外，在液晶显示面板的TFT基板及CF基板上还需分别设置一层配向膜，该配向膜与LC接触后，能够使得LC产生一定方向的预倾角，从而给液晶分子提供一个承载的角度(预倾角的大小对TFT-LCD的驱动电压、对比度、响应时间、视角等具有重要影响)，配向膜的材料通常选用聚酰亚胺(Polyimide，PI)材料，主要分为摩擦配相型PI材料和光配相型PI材料，但是，无论哪种配向材料都有各自的缺点。其中，摩擦配相型PI材料通过摩擦配向法(Rubbing)形成配向膜，摩擦配向法是在高分子PI膜表面用绒布滚轮进行接触式的定向机械摩擦，摩擦高分子表面所提供的能量使高分子主链因延伸而定向排列，从而控制支链与LC相互作用，使LC按照预倾角的方向排列；因此，在摩擦配向时容易造成粉尘颗粒、静电残留、刷痕等问题降低工艺良率。而光配相型PI材料通过光配向法(photo-alignmenttechnology)形成配向膜，光配向法是利用紫外光敏聚合物单体材料的光化学反应产生各向异性，液晶分子与配向膜表面支链相互作用，为达到能量最小的稳定状态，液晶分子沿着光配向所定义的受力最大的方向排列，该光配相型PI材料可以解决上述问题，但由于材料特性受限，耐热性和耐老化性不佳，同时锚定LC的能力也较弱，从而影响面板的品质。除此之外，PI材料本身就具有高极性和高吸水性，存储和运送容易造成变质而导致配相不均，并且PI材料价格昂贵，在TFT-LCD上成膜的工艺也较为复杂，导致面板成本提高。
发明内容
本发明的目的在于提供一种液晶显示面板的制作方法，利用石墨烯/PEDOT:PSS复合透明导电膜代替TFT基板和CF基板上传统的ITO透明导电膜，同时在液晶混合物中混入一种极性材料，可代替PI配向膜达到使得液晶分子垂直取向的效果从而制备出一种可省去PI配向膜的液晶显示面板。
为实现上述目的，本发明提供一种液晶显示面板的制作方法，包括以下步骤：
步骤1、提供TFT基板和CF基板，在所述TFT基板和CF基板的一侧上分别形成第一导电膜和第二导电膜，所述第一、第二导电膜均为石墨烯/PEDOT:PSS复合透明导电膜；
步骤2、将极性材料混入液晶材料中，得到液晶混合物；
所述极性材料的结构通式为A-B，其中，
A指的是与B相连的一个或多个极性基团，所述极性基团为伯胺基、仲胺基、叔胺基、-OH、-COOH、-SH、-Si(CH3)3、或-CN；
B指的是具有5～20个C原子的直链或支链化的烷基、该烷基中的某个CH2基团被苯基、环烷基、-O-、-CONH-、-COO-、-O-CO-、-CO-或-CH＝CH-基团所取代后得到的第一基团、该烷基中的某个H原子被F或Cl原子取代后得到的第二基团、或者该第一基团中的某个H原子被F或Cl原子取代后得到的第三基团；
步骤3、采用滴下式注入法将所述步骤2得到的液晶混合物滴加到TFT基板的第一导电膜一侧上或者CF基板的第二导电膜一侧上；
步骤4、将TFT基板与CF基板进行真空对组，得到液晶显示面板；此时，所述极性材料与TFT基板上的第一导电膜及CF基板上的第二导电膜之间产生较强的分子间作用力而在TFT基板和CF基板的表面垂直排列，进而引导液晶材料中的液晶分子垂直排列，从而起到液晶配向的作用。
所述极性材料的结构式为：
所述步骤2得到的液晶混合物中，所述极性材料的含量为0.1～5wt％。
所述步骤1中提供的TFT基板和CF基板预形成第一与第二导电膜的一侧上的一侧上分别设有数个屋脊状的凸起物。
所述步骤1具体包括以下步骤：
步骤11、按照石墨烯粉末、水系表面活性剂、及去离子水的质量比为1：50～500：2000～100000的比例将石墨烯粉末与水系表面活性剂投入去离子水中并进行超声分散，得到石墨烯溶液；
步骤12、将所述石墨烯溶液与一定浓度的PEDOT:PSS溶液按质量比为1：100至100：1的比例混合，超声处理后，得到分散均匀的石墨烯/PEDOT:PSS混合溶液；
步骤13、采用湿法涂布工艺将所述石墨烯/PEDOT:PSS混合溶液分别涂布于TFT基板和CF基板上，进行成膜，得到石墨烯/PEDOT:PSS薄膜；
步骤14、将成膜后的TFT基板和CF基板使用去离子水多次冲洗，以去除石墨烯/PEDOT:PSS薄膜内的水系表面活性剂，增加石墨烯/PEDOT:PSS薄膜的导电性；
步骤15、对所述石墨烯/PEDOT:PSS薄膜进行干燥处理，将薄膜内的水分去除，得到干燥的石墨烯/PEDOT:PSS复合透明导电膜，即得到分别位于TFT基板一侧上的第一导电膜和CF基板一侧上的第二导电膜。
所述步骤11中，所述水系表面活性剂为十二烷基硫酸钠、十二烷基硫酸铵、十二烷基磺酸钠、十二烷基苯磺酸钠或十四烷基硫酸钠；采用超声仪进行超声分散，超声功率为50～400W，超声时间为5～60min。
所述步骤12中，所述PEDOT:PSS溶液由去离子水与PEDOT:PSS配制而成，且所述PEDOT:PSS溶液中PEDOT:PSS的质量百分比为1～100wt％。
所述步骤13中，所述湿法涂布工艺为喷涂、旋涂、辊涂、狭缝挤压涂布、浸涂、刮涂、凹版印刷、喷墨打印或者丝网印刷。
当所述湿法涂布工艺为喷涂时，所述步骤13为：将所述TFT基板和CF基板放置在恒温加热板上，采用喷涂方式将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板和CF基板上，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-120℃；
当所述湿法涂布工艺为旋涂、辊涂或者狭缝挤压涂布时，所述步骤13为：将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板和CF基板上，涂布后迅速将TFT基板和CF基板转移到恒温加热板上烘烤3-10min，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-140℃。
所述步骤15中的干燥处理工艺为自然干燥、氮气吹干或者在80-120℃加热条件下快速烘干。
本发明的有益效果：本发明提供一种液晶显示面板的制作方法，利用石墨烯/PEDOT:PSS复合透明导电膜代替TFT基板和CF基板上传统的ITO透明导电膜，并在液晶显示面板的液晶混合物中加入极性材料，该极性材料的结构通式为A-B，其中，A指的是与B相连的一个或多个极性基团，所述极性基团为伯胺基、仲胺基、叔胺基、-OH、-COOH、-SH、-Si(CH3)3、或-CN，B指的是具有5～20个C原子的直链或支链化的烷基、该烷基中的某个CH2基团被苯基、环烷基、-O-、-CONH-、-COO-、-O-CO-、-CO-或-CH＝CH-基团所取代后得到的第一基团、该烷基中的某个H原子被F或Cl原子取代后得到的第二基团、或者该第一基团中的某个H原子被F或Cl原子取代后得到的第三基团；该极性材料能够与石墨烯/PEDOT:PSS复合透明导电膜之间产生较大的分子间作用力而垂直排列于石墨烯/PEDOT:PSS复合透明导电膜上，其中头基A的主要作用是使得极性材料与石墨烯/PEDOT:PSS复合透明导电膜之间产生较大的分子间作用力，而尾基B主要作用是类似于PI支链的作用以立体障碍的方式使液晶分子垂直排列，从而可以代替PI配向膜起到垂直配向的效果，进而省去PI配向膜制程，降低配向膜的生产成本，提升产能。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的液晶显示面板的制作方法的流程示意图；
图2为本发明的液晶显示面板的制作方法的步骤2中所提供的极性材料的结构示意图；
图3为本发明的液晶显示面板的制作方法中极性材料与石墨烯/PEDOT:PSS复合透明导电膜之间相互作用的示意图；
图4为本发明的液晶显示面板的制备方法的步骤4的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种液晶显示面板的制作方法，包括以下步骤：
步骤1、提供TFT基板10和CF基板20，在所述TFT基板10和CF基板20的一侧上分别形成第一导电膜31和第二导电膜32，所述第一、第二导电膜31、32均为石墨烯/PEDOT:PSS复合透明导电膜。
具体的，所制作的液晶显示面板为多畴垂直取向(Multi-domain VerticalAlignment，MVA)型液晶显示面板，所述步骤2中提供的TFT基板10和CF基板20为传统的MVA型液晶显示面板的TFT基板和CF基板，所述TFT基板10和CF基板20预形成第一与第二导电膜31、32的一侧上分别设有数个屋脊状的凸起物21。
具体的，所述第一导电膜31用于TFT基板10的像素电极，所述第二导电膜32用于CF基板20的公共电极。
步骤2、将极性材料51混入液晶材料52中，得到液晶混合物；
所述极性材料51的结构通式为A-B，其中，
A指的是与B相连的一个或多个极性基团，所述极性基团为伯胺基、仲胺基、叔胺基、-OH、-COOH、-SH、-Si(CH3)3、或-CN；
B指的是具有5～20个C原子的直链或支链化的烷基、该烷基中的某个CH2基团被苯基、环烷基、-O-、-CONH-、-COO-、-O-CO-、-CO-或-CH＝CH-基团所取代后得到的第一基团、该烷基中的某个H原子被F或Cl原子取代后得到的第二基团、或者该第一基团中的某个H原子被F或Cl原子取代后得到的第三基团。
优选的，该极性材料51的结构式为：
具体的，所述步骤2得到的液晶混合物中，所述极性材料51的含量为0.1～5wt％。
具体的，如图2-3所示，所述极性材料51中，头基A为一个或多个极性基团，其主要作用是使极性材料51与石墨烯/PEDOT:PSS复合透明导电膜之间产生较强的分子作用力而吸附在石墨烯/PEDOT:PSS复合透明导电膜上；而尾基B的主要作用是类似于PI支链的作用以立体障碍的方式使液晶分子垂直排列。
具体的，该极性材料51与石墨烯/PEDOT:PSS复合透明导电膜的作用机理为：
(1)石墨烯是一种碳原子以SP2杂化形成的网状结构，其结构上剩余一个P轨道电子，其内的苯环上的电子会与含有极性基团的极性材料51产生较强的分子间作用力；
(2)PEDOT为聚(3,4-亚乙二氧基噻吩)，其内的噻吩基团本身也是富电子基团，也会与含有极性基团的极性材料51产生较强的分子间作用力；
(3)PSS为聚(苯乙烯磺酸)，既含有苯环结构，又含有磺酸基，也会与含有极性基团的极性材料51产生较强的分子间作用力。
步骤3、采用滴下式注入法(One Drop Filling，ODF)将得到的液晶混合物滴加到TFT基板10的第一导电膜31一侧或者CF基板20的第二导电膜32一侧上。
步骤4、如图4所示，将TFT基板10与CF基板20进行真空对组，得到液晶显示面板；此时，所述极性材料51与TFT基板10上的第一导电膜31及CF基板20上的第二导电膜32之间产生较强的分子间作用力而在TFT基板10和CF基板20的表面垂直排列，进而引导液晶材料52中的液晶分子垂直排列，从而起到液晶配向的作用。进一步的，由于所述TFT基板10和CF基板20上均设有数个屋脊状的凸起物21，从而使得位于凸起物21上方的极性材料51沿着凸起物21的斜面垂直排列，进而引导液晶材料52中的液晶分子沿着凸起物21的斜面垂直排列，使液晶分子产生预倾角。
具体的，所述步骤1具体包括以下步骤：
步骤11、按照石墨烯粉末、水系表面活性剂、及去离子水的质量比为1：50～500：2000～100000的比例将石墨烯粉末与水系表面活性剂投入去离子水中并进行超声分散，得到石墨烯溶液；
具体的，所述水系表面活性剂为十二烷基硫酸钠、十二烷基硫酸铵、十二烷基磺酸钠、十二烷基苯磺酸钠或十四烷基硫酸钠。
具体的，采用超声仪进行超声分散，超声功率为50～400W，超声时间为5～60min。
步骤12、将所述石墨烯溶液与一定浓度的PEDOT:PSS溶液按质量比为1：100至100：1的比例混合，超声处理后，得到分散均匀的石墨烯/PEDOT:PSS混合溶液；
具体的，所述PEDOT:PSS溶液由去离子水与PEDOT:PSS配制而成，且所述PEDOT:PSS溶液中PEDOT:PSS溶液的质量百分比为1～100wt％。
步骤13、采用湿法涂布工艺将所述石墨烯/PEDOT:PSS混合溶液分别涂布于TFT基板10和CF基板20上，进行成膜，得到石墨烯/PEDOT:PSS薄膜；
具体的，所述湿法涂布工艺为喷涂、旋涂、辊涂、狭缝挤压涂布(slot-die)、浸涂、刮涂、凹版印刷、喷墨打印或者丝网印刷等方式。
具体地，当所述湿法涂布工艺为喷涂时，所述步骤13为：将所述TFT基板10和CF基板20一直放置在恒温加热板上，采用喷涂方式将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板10和CF基板20上，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-120℃。
具体的，采用喷涂工艺时，可以通过控制石墨烯/PEDOT:PSS混合溶液的用量，喷涂压力、时间和次数等因素来控制成膜的厚度。
当所述湿法涂布工艺为旋涂、辊涂或者狭缝挤压涂布时，所述步骤13为：将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板10和CF基板20上，涂布后迅速将TFT基板10和CF基板20转移到恒温加热板上烘烤3-10min，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-140℃。
具体的，采用旋涂工艺时，通过控制石墨烯/PEDOT:PSS混合溶液的用量，旋涂时间、速度和次数等因素来控制成膜的厚度。
步骤14、将成膜后的TFT基板10和CF基板20使用去离子水多次冲洗，以去除石墨烯/PEDOT:PSS薄膜内的水系表面活性剂，增加石墨烯/PEDOT:PSS薄膜的导电性；
步骤15、对所述石墨烯/PEDOT:PSS薄膜进行干燥处理，将薄膜内的水分去除，得到干燥的石墨烯/PEDOT:PSS复合透明导电膜，即得到分别位于TFT基板10一侧上的第一导电膜31和CF基板20一侧上的第二导电膜32。
具体的，所述干燥处理工艺为自然干燥、氮气吹干或者在80-120℃加热条件下快速烘干。
综上所述，本发明的液晶显示面板的制作方法，利用石墨烯/PEDOT:PSS复合透明导电膜代替TFT基板和CF基板上传统的ITO透明导电膜，并在液晶显示面板的液晶混合物中加入极性材料，该极性材料的结构通式为A-B，其中，A指的是与B相连的一个或多个极性基团，所述极性基团为伯胺基、仲胺基、叔胺基、-OH、-COOH、-SH、-Si(CH3)3、或-CN，B指的是具有5～20个C原子的直链或支链化的烷基、该烷基中的某个CH2基团被苯基、环烷基、-O-、-CONH-、-COO-、-O-CO-、-CO-或-CH＝CH-基团所取代后得到的第一基团、该烷基中的某个H原子被F或Cl原子取代后得到的第二基团、或者该第一基团中的某个H原子被F或Cl原子取代后得到的第二基团；该极性材料能够与石墨烯/PEDOT:PSS复合透明导电膜之间产生较大的分子间作用力而垂直排列于石墨烯/PEDOT:PSS复合透明导电膜上，其中头基A的主要作用是使得极性材料与石墨烯/PEDOT:PSS复合透明导电膜之间产生较大的分子间作用力，而尾基B主要作用是类似于PI支链的作用以立体障碍的方式使液晶分子垂直排列，从而可以代替PI配向膜起到垂直配向的效果，进而省去PI配向膜制程，降低配向膜的生产成本，提升产能。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种液晶显示面板的制作方法，其特征在于，包括以下步骤：
步骤1、提供TFT基板(10)和CF基板(20)，在所述TFT基板(10)和CF基板(20)的一侧上分别形成第一导电膜(31)和第二导电膜(32)，所述第一、第二导电膜(31、32)均为石墨烯/PEDOT:PSS复合透明导电膜；
步骤2、将极性材料(51)混入液晶材料(52)中，得到液晶混合物；
所述极性材料(51)的结构通式为A-B，其中，
A指的是与B相连的一个或多个极性基团，所述极性基团为伯胺基、仲胺基、叔胺基、-OH、-COOH、-SH、-Si(CH3)3、或-CN；
B指的是具有5～20个C原子的直链或支链化的烷基、该烷基中的某个CH2基团被苯基、环烷基、-O-、-CONH-、-COO-、-O-CO-、-CO-或-CH＝CH-基团所取代后得到的第一基团、该烷基中的某个H原子被F或Cl原子取代后得到的第二基团、或者该第一基团中的某个H原子被F或Cl原子取代后得到的第三基团；
步骤3、采用滴下式注入法将所述步骤2得到的液晶混合物滴加到TFT基板(10)的第一导电膜(31)一侧上或者CF基板(20)的第二导电膜(32)一侧上；
步骤4、将TFT基板(10)与CF基板(20)进行真空对组，得到液晶显示面板；此时，所述极性材料(51)与TFT基板(10)上的第一导电膜(31)及CF基板(20)上的第二导电膜(32)之间产生较强的分子间作用力而在TFT基板(10)和CF基板(20)的表面垂直排列，进而引导液晶材料(52)中的液晶分子垂直排列，从而起到液晶配向的作用。
2.如权利要求1所述的液晶显示面板的制作方法，其特征在于，所述极性材料(51)的结构式为：
3.如权利要求1所述的液晶显示面板的制作方法，其特征在于，所述步骤2得到的液晶混合物中，所述极性材料(51)的含量为0.1～5wt％。
4.如权利要求1所述的液晶显示面板的制作方法，其特征在于，所述步骤1中提供的TFT基板(10)和CF基板(20)预形成第一与第二导电膜(31、32)的一侧上分别设有数个屋脊状的凸起物(21)。
5.如权利要求1所述的液晶显示面板的制作方法，其特征在于，所述步骤1具体包括以下步骤：
步骤11、按照石墨烯粉末、水系表面活性剂、及去离子水的质量比为1：50～500：2000～100000的比例将石墨烯粉末与水系表面活性剂投入去离子水中并进行超声分散，得到石墨烯溶液；
步骤12、将所述石墨烯溶液与一定浓度的PEDOT:PSS溶液按质量比为1：100至100：1的比例混合，超声处理后，得到分散均匀的石墨烯/PEDOT:PSS混合溶液；
步骤13、采用湿法涂布工艺将所述石墨烯/PEDOT:PSS混合溶液分别涂布于TFT基板(10)和CF基板(20)上，进行成膜，得到石墨烯/PEDOT:PSS薄膜；
步骤14、将成膜后的TFT基板(10)和CF基板(20)使用去离子水多次冲洗，以去除石墨烯/PEDOT:PSS薄膜内的水系表面活性剂，增加石墨烯/PEDOT:PSS薄膜的导电性；
步骤15、对所述石墨烯/PEDOT:PSS薄膜进行干燥处理，将薄膜内的水分去除，得到干燥的石墨烯/PEDOT:PSS复合透明导电膜，即得到分别位于TFT基板(10)一侧上的第一导电膜(31)和CF基板(20)一侧上的第二导电膜(32)。
6.如权利要求5所述的液晶显示面板的制作方法，其特征在于，所述步骤11中，所述水系表面活性剂为十二烷基硫酸钠、十二烷基硫酸铵、十二烷基磺酸钠、十二烷基苯磺酸钠或十四烷基硫酸钠；采用超声仪进行超声分散，超声功率为50～400W，超声时间为5～60min。
7.如权利要求5所述的液晶显示面板的制作方法，其特征在于，所述步骤12中，所述PEDOT:PSS溶液由去离子水与PEDOT:PSS配制而成，且所述PEDOT:PSS溶液中PEDOT:PSS的质量百分比为1～100wt％。
8.如权利要求5所述的液晶显示面板的制作方法，其特征在于，所述步骤13中，所述湿法涂布工艺为喷涂、旋涂、辊涂、狭缝挤压涂布、浸涂、刮涂、凹版印刷、喷墨打印或者丝网印刷。
9.如权利要求8所述的液晶显示面板的制作方法，其特征在于，当所述湿法涂布工艺为喷涂时，所述步骤13为：将所述TFT基板(10)和CF基板(20)放置在恒温加热板上，采用喷涂方式将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板(10)和CF基板(20)上，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-120℃；
当所述湿法涂布工艺为旋涂、辊涂或者狭缝挤压涂布时，所述步骤13为：将所述石墨烯/PEDOT:PSS混合溶液涂布于所述TFT基板(10)和CF基板(20)上，涂布后迅速将TFT基板(10)和CF基板(20)转移到恒温加热板上烘烤3-10min，进行成膜，得到石墨烯/PEDOT:PSS薄膜，所述恒温加热板的温度范围为80-140℃。
10.如权利要求5所述的液晶显示面板的制作方法，所述步骤15中的干燥处理工艺为自然干燥、氮气吹干或者在80-120℃加热条件下快速烘干。
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