WO2017126782A1

WO2017126782A1 - Bidirectional conductive pattern module for testing semiconductor using high-precision fabrication technique, semiconductor test socket using same, and manufacturing method for bidirectional conductive pattern module for testing semiconductor

Info

Publication number: WO2017126782A1
Application number: PCT/KR2016/012130
Authority: WO
Inventors: 이은주; 정주연
Original assignee: 주식회사 이노글로벌
Priority date: 2016-01-21
Filing date: 2016-10-27
Publication date: 2017-07-27
Also published as: KR101757617B1

Abstract

The present invention relates to a bidirectional conductive pattern module for testing a semiconductor, a semiconductor test socket using the same, and a manufacturing method for the bidirectional conductive pattern module for testing a semiconductor. The bidirectional conductive pattern module for testing a semiconductor according to the present invention comprises: a first conductive pattern part in which a plurality of first conductive lines respectively having a first upper part contact part, a first lower part contact part, and a first middle resilience part that electrically connects the first upper part contact part and the first lower part contact part are arranged in a horizontal direction and spaced apart from one another; a second conductive pattern part in which a plurality of second conductive lines respectively having a second upper part contact part, a second lower part contact part, and a second middle resilience part that electrically connects the second upper part contact part and the second lower part contact part are arranged in the horizontal direction and spaced apart from one another, and which is spaced apart from the first conductive pattern part in a thickness direction; and an insulation plate which is arranged between the first conductive pattern part and the second conductive pattern part so as to electrically insulate the first conductive pattern part and the second conductive pattern part, wherein the first middle resilience part and the second middle resilience part have a curved shape in the horizontal direction so as to have resilience in an upper part direction, the first conductive pattern part and the second conductive pattern part are arranged such that the first upper part contact part and the second upper part contact part are alternately arranged in the horizontal direction, and the first middle resilience part and the second middle resilience part are arranged to overlap in the thickness direction so that a gap between the first upper part contact part and the second upper part contact part that are adjacent each other in the horizontal direction is reduced.

Description

Bidirectional conductive pattern module for semiconductor test using ultra-precision processing technology, manufacturing method of semiconductor test socket, bidirectional conductive pattern module for semiconductor test using the same

The present invention relates to a bidirectional conductive pattern module for semiconductor testing using ultra-precision processing technology, a semiconductor test socket using the same, and a method for manufacturing a bidirectional conductive pattern module for semiconductor testing, and more particularly, to a pogo-pin type semiconductor test socket. The present invention relates to a bidirectional conductive pattern module for a semiconductor test and a method for manufacturing a bidirectional conductive pattern module for a semiconductor test and a semiconductor test socket using the same.

After the semiconductor device is manufactured, the semiconductor device performs a test to determine whether the electrical performance is poor. The positive test of the semiconductor device is performed by inserting a semiconductor test socket (or a contactor or a connector) formed between the semiconductor device and the test circuit board so as to be in electrical contact with a terminal of the semiconductor device. The semiconductor test socket is also used in a burn-in test process during the manufacturing process of the semiconductor device, in addition to the final positive inspection of the semiconductor device.

With the development and miniaturization of semiconductor device integration technology, the size and spacing of terminals of semiconductor devices, that is, leads, are also miniaturized. Accordingly, there is a demand for a method of forming minute spacing between conductive patterns of test sockets.

However, the conventional Pogo-pin type semiconductor test socket has a limitation in manufacturing a semiconductor test socket for testing a semiconductor device to be integrated. 1 to 3 are diagrams showing an example of a conventional Pogo-pin type semiconductor test socket disclosed in Korean Patent Laid-Open No. 10-2011-0065047.

1 to 3, a conventional semiconductor test socket 100 includes a housing 110 having a through hole 111 formed in a vertical direction at a position corresponding to a terminal 131 of a semiconductor device 130; Pogo-pin 120 mounted in the through hole 111 of the housing 110 to electrically connect the terminal 131 of the semiconductor device 130 and the pad 141 of the test device 140. Is done.

The configuration of the pogo-pin (120) (pogo-pin) (120) is used as a pogo-pin (Pogo-pin) body, the barrel 124 having a cylindrical shape with an empty inside, and formed on the lower side of the barrel 124 The semiconductor device may be connected to a contact tip 123, a spring 122 connected to the contact tip 123 inside the barrel 124 and contracting and expanding a motion, and a spring 122 connected to the contact tip 123. 130 is composed of a contact pin 121 to perform the vertical movement in accordance with the contact.

At this time, the spring 122 is contracted and expanded while absorbing the mechanical shock transmitted to the contact pin 121 and the contact tip 123, the terminal 131 of the semiconductor device 130 and the pad of the test device 140 141 is electrically connected to check whether there is an electrical defect.

However, the conventional Pogo-pin type semiconductor test socket as described above uses a physical spring to maintain elasticity in the vertical direction, inserts the spring and the pin into the barrel, and Since the process has to be inserted into the through-hole of the housing again, the process is complicated and the manufacturing cost increases due to the complexity of the process.

In addition, the physical configuration itself for the implementation of the electrical contact structure having elasticity in the vertical direction has a limit to implement the fine pitch, and the situation has already reached the limit to apply to the integrated semiconductor device in recent years.

In order to overcome the limitations of the pogo-pin type semiconductor device, the limited technology forms a perforated pattern in a vertical direction on a silicon main body made of an elastic silicon material, and then conductive powder inside the perforated pattern. It is a PCR socket type semiconductor test socket that fills the conductive pattern to form a conductive pattern.

However, the PCR-type semiconductor test socket also has a problem due to structural limitations of the PCR-type semiconductor test socket, such as a problem of shortening of life due to separation of conductive powder filled therein.

Accordingly, there is a need for development of other types of semiconductor test sockets capable of realizing fine pitches, but also to solve the problems of height limitations and other types of semiconductor test sockets such as PCR type semiconductor test sockets.

Accordingly, the present invention has been made to solve the above problems, to compensate for the shortcomings of the semiconductor test socket of the pogo-pin type and PCR type, it is possible to implement the fine pitch while increasing the height in the vertical direction long or short It is an object of the present invention to provide a bidirectional conductive pattern module for a semiconductor test, a semiconductor test socket using the same, and a method of manufacturing a bidirectional conductive pattern module for a semiconductor test, which can guarantee stable electrical contact even if implemented.

According to the present invention, in the bidirectional conductive pattern module for a semiconductor test, the first upper contact portion, the first lower contact portion and the first intermediate restoring portion electrically connecting the first upper contact portion and the first lower contact portion, respectively. A plurality of first conductive patterns having a plurality of first conductive lines spaced apart from each other in the horizontal direction, and a second upper contact portion, a second lower contact portion, and a second upper contact portion and the second lower contact portion, respectively. A plurality of second conductive lines having a second intermediate restoring portion to be connected are disposed in a state spaced apart from each other in the horizontal direction, the second conductive pattern portion spaced apart from the first conductive pattern portion in the thickness direction, and the first conductive An insulating plate disposed between the pattern portion and the second conductive pattern portion to electrically insulate the first conductive pattern portion and the second conductive pattern portion; The first intermediate restoration part and the second intermediate restoration part have a shape curved in the horizontal direction to have a restoring force in an upward direction; The first conductive pattern portion and the second conductive pattern portion are arranged such that the first upper contact portion and the second upper contact portion are alternately arranged in the horizontal direction; And the first intermediate restoration part and the second intermediate restoration part are disposed to overlap each other in the thickness direction such that a distance between the first upper contact part and the second upper contact part adjacent in the horizontal direction is reduced. It is achieved by a conductive pattern module.

Wherein the first upper contact portion, the first intermediate restoring portion, and the first lower contact portion are integrally manufactured by processing a conductive metal sheet to form the first conductive line; The second upper contact portion, the second intermediate restoration portion, and the second lower contact portion may be integrally manufactured by processing a conductive metal sheet to form the second conductive line.

The width of the first intermediate restoration part in the horizontal direction is wider than the width of the first upper contact part and the first lower contact part in the horizontal direction, so that the gap between the adjacent first upper contact parts and the first upper contact part are adjacent to each other. The intervals between the first lower contact portions remain spaced apart by a predetermined interval; The width in the horizontal direction of the second intermediate restoration part is formed to be wider than the width in the horizontal direction of the second upper contact part and the second lower contact part, so that a gap between the second upper contact parts adjacent to each other and the second lower contact part are formed. The spacing between the contacts is kept at a predetermined interval apart; In the state where the first conductive pattern portion and the second conductive pattern portion are overlapped in the thickness direction with the insulating plate interposed therebetween, one of the first upper contact portion and the first lower contact portion is disposed between the adjacent second upper contact portions. The second upper contact portion and the second lower contact portion may be positioned between the first upper contact portion and the adjacent first lower contact portion, respectively.

The first conductive pattern portion further includes a plurality of first upper auxiliary contact portions disposed between the first upper contact portions adjacent to each other and electrically insulated from the adjacent first conductive lines; The second conductive pattern portion further includes a plurality of second upper auxiliary contact portions disposed between the second upper contact portions adjacent to each other and electrically insulated from the adjacent second conductive lines; Each of the first upper auxiliary contacts is electrically connected to the second upper contact at a corresponding position; Each of the second upper auxiliary contacts may be electrically connected to the first upper contact at a corresponding position.

The first conductive pattern portion may further include a plurality of first lower auxiliary contact portions disposed between the first lower contact portions adjacent to each other and electrically insulated from the adjacent first conductive lines; The second conductive pattern portions further include a plurality of second lower auxiliary contacts respectively disposed between the second lower contact portions adjacent to each other and electrically insulated from the adjacent second conductive lines; Each of the first lower auxiliary contacts is electrically connected to the second lower contact at a corresponding position; Each second lower auxiliary contact may be electrically connected to the first lower contact at a corresponding position.

The first upper contact portion and the second upper auxiliary contact portion are electrically connected to each other through soldering; The second upper contact portion and the first upper auxiliary contact portion are electrically connected to each other through soldering; The first lower contact portion and the second lower auxiliary contact portion are electrically connected to each other through soldering; The second lower contact portion and the first lower auxiliary contact portion may be electrically connected to each other through soldering.

In addition, at least one of the first restoring unit and the second restoring unit may have a circular hollow shape having a shape in both sides of the horizontal direction, an empty hollow ellipse shape having a shape in both sides of the horizontal direction, a C shape, It may be provided in any one of an inverted C shape, an S shape, and an inverted S shape in the horizontal direction.

The first conductive pattern portion and the second conductive portion may protrude from the first upper contact portion and the second upper contact portion in an upward direction, and the first lower contact portion and the second lower contact portion may protrude in a downward direction. The pattern body may further include an insulating body made of an insulating material blocking both sides of the depth direction.

On the other hand, the above object is in accordance with another embodiment of the present invention, has an open rectangular shape in the vertical direction, and the inner housing formed with a plurality of slots from the top to the bottom to correspond to a pair of sides facing each other, facing each other The plurality of semiconductor test bidirectional conductive pattern module is inserted into each of the pair of slots and the inside is provided in the form of a hollow frame coupled to the inner housing so that a plurality of the bidirectional conductive pattern module for semiconductor test is exposed to the top It can also be achieved by a semiconductor test socket characterized in that it comprises an outer housing.

On the other hand, the above object is, according to still another embodiment of the present invention, in the method for manufacturing a bidirectional conductive pattern module for semiconductor testing, (a) by processing a conductive metal thin plate, respectively, the first upper contact portion, the first lower contact portion and the first 1. A method of manufacturing a first conductive pattern part by forming a plurality of first conductive lines having a first intermediate restoring portion electrically connecting an upper contact portion and a first lower contact portion to be spaced apart from each other in a horizontal direction. The conductive lines have an interconnected state; and (b) a second intermediate that processes the conductive metal sheet to electrically connect the second upper contact portion, the second lower contact portion and the second upper contact portion and the second lower contact portion, respectively. Forming a second conductive pattern portion by forming a plurality of second conductive lines spaced apart from each other in a horizontal direction, the second conductive pattern having a restoration portion, wherein the adjacent second conductive The lines have an interconnected state; and (c) an insulating plate is formed between the first conductive pattern portion and the second conductive pattern portion to electrically insulate the first conductive pattern portion and the second conductive pattern portion. And disposing the first conductive pattern portion and the second conductive pattern portion in a thickness direction spaced apart from each other, (d) a connection portion between the first conductive lines in an interconnected state, and the first conductive pattern portion and the second conductive pattern portion. Cutting the connection between the two conductive lines to electrically insulate the first conductive lines and electrically insulate the second conductive lines; In the steps (a) and (b), the first intermediate restoration part and the second intermediate restoration part are processed to have a shape curved in the horizontal direction to have a restoring force in an upward direction; In the step (c), the first upper contact portion and the second conductive pattern portion are alternately arranged in the horizontal direction, and the first lower contact portion and the second lower contact portion are alternately arranged in the horizontal direction. Are arranged so that they are alternately arranged in the transverse direction; In the step (c), the first intermediate restoring portion and the second intermediate restoring portion are arranged to overlap in the thickness direction such that the distance between the first upper contact portion and the second upper contact portion adjacent in the horizontal direction is reduced. It also achieves by the manufacturing method of the bidirectional conductive pattern module for semiconductor tests.

Here, the step (c) may be performed such that the upper region of the first upper contact portion and the lower region of the first lower contact portion protrude in the upper and lower directions, respectively, and the first intermediate restoration part is blocked in the depth direction. Forming a first insulating portion on one surface of the first conductive pattern portion; (c2) attaching the second conductive pattern portion to the first insulating portion in the thickness direction to form the insulating plate by the first insulating portion.

In the step (c), the upper region of the first upper contact portion and the lower region of the first lower contact portion protrude in the upper and lower directions, respectively, and the first intermediate restoration portion is blocked in the depth direction. Forming a first insulating portion on one surface of the first conductive pattern portion; (c2) an upper region of the second upper contact portion and a lower region of the second lower contact portion may protrude in the upper and lower directions, respectively, and on one surface of the second conductive pattern portion so that the second intermediate restoration portion is blocked in the depth direction; Forming a second insulation; (c3) forming the insulating plate between the first conductive pattern portion and the second insulating pattern portion by attaching the first insulating portion and the second insulating portion to each other in the thickness direction.

In addition, any one of an etching method and a stamping method may be applied to the processing of the conductive metal thin plate in the steps (a) and (b).

In the step (a), a first upper auxiliary contact part is formed between the first upper contact parts adjacent to each other so that the first upper contact part and the first upper auxiliary contact part are alternately formed in the horizontal direction; In the step (b), a second upper auxiliary contact portion is formed between the second upper contact portions adjacent to each other so that the second upper contact portion and the second upper auxiliary contact portion are alternately formed in the horizontal direction; The first upper contact portion and the first upper auxiliary contact portion which are adjacent to each other in the step (a) are connected to each other so that the connection portion is cut in the step (d); The second upper contact portion and the second upper auxiliary contact portion which are adjacent to each other in the step (b) are connected to each other so that the connection portion is cut in the step (d); The step (c) may include electrically connecting the first upper contact portion and the second upper auxiliary contact portion at mutually corresponding positions, and electrically connecting the second upper contact portion and the first upper auxiliary contact portion at mutually corresponding positions. The connection may further include.

Further, in the step (a), a first lower auxiliary contact portion is formed between the first lower contact portions adjacent to each other so that the first lower contact portion and the first lower auxiliary contact portion are alternately formed in the horizontal direction; In the step (b), a second lower auxiliary contact part is formed between the second lower contact parts adjacent to each other so that the second lower contact part and the second lower auxiliary contact part are alternately formed in the horizontal direction; The first lower contact portion and the first lower auxiliary contact portion which are adjacent to each other in the step (a) are connected to each other so that the connection portion is cut in the step (d); The second lower contact portion and the second lower auxiliary contact portion which are adjacent to each other in the step (b) are connected to each other so that the connection portion is cut in the step (d); The step (c) may include electrically connecting the first lower contact portion and the second lower auxiliary contact portion at mutually corresponding positions, and electrically connecting the second lower contact portion and the first lower auxiliary contact portion at mutually corresponding positions. The connection may further include.

And the first upper contact portion and the second upper auxiliary contact portion are electrically connected to each other through soldering; The second upper contact portion and the first upper auxiliary contact portion are electrically connected to each other through soldering; The first lower contact portion and the second lower auxiliary contact portion are electrically connected to each other through soldering; The second lower contact portion and the first lower auxiliary contact portion may be electrically connected to each other through soldering.

The first conductive pattern portion and the second conductive portion may protrude in a state in which the first upper contact portion and the second upper contact portion protrude upward, and the first lower contact portion and the second lower contact portion protrude downward. The method may further include forming an insulating body by blocking both sides of the pattern part in the depth direction with an insulating material.

According to the present invention according to the configuration as described above, the first intermediate restoration portion for providing a restoring force in the vertical direction in the first conductive pattern portion in forming the first conductive pattern portion and the second conductive pattern portion through the processing of the conductive metal thin plate And the first conductive pattern portion and the second conductive pattern portion in the thickness direction, even if the width in the horizontal direction increases as the second intermediate restoration portion provides the restoring force in the vertical direction in the second conductive pattern portion. By overlapping fabrication, it is possible to implement a fine pitch.

In addition, by forming the first conductive pattern portion and the second conductive pattern portion by processing the conductive metal thin plate using an etching method or a stamping method, not only the manufacturing method is simplified but also the manufacturing cost can be significantly reduced.

1 to 3 are diagrams for explaining a conventional Pogo-pin type semiconductor test socket,

4 is a perspective view of a bidirectional conductive pattern module for semiconductor testing according to an embodiment of the present invention;

5 is a cross-sectional view taken along line A1-A1 and line A2-A2 of FIG. 4,

6 to 10 are views for explaining a manufacturing process of a bidirectional conductive pattern module for a semiconductor test according to an embodiment of the present invention,

11 is a perspective view of a semiconductor test socket according to an embodiment of the present invention,

12 is a diagram illustrating other examples of the first conductive line and the second conductive line of the bidirectional conductive pattern module for semiconductor test according to the embodiment of the present invention.

The present invention relates to a bidirectional conductive pattern module for a semiconductor test, a semiconductor test socket using the same, and a method for manufacturing a bidirectional conductive pattern module for a semiconductor test. The bidirectional conductive pattern module for a semiconductor test according to the present invention includes a plurality of first conductive parts each having a first upper contact part, a first lower contact part, and a first intermediate restoration part electrically connecting the first upper contact part and the first lower contact part. A second intermediate restoration electrically connecting the first conductive pattern portion disposed with the lines spaced apart from each other in the horizontal direction, and the second upper contact portion, the second lower contact portion, and the second upper contact portion and the second lower contact portion, respectively. A plurality of second conductive lines having a portion is disposed in a state spaced apart from each other in the horizontal direction, the second conductive pattern portion spaced apart from the first conductive pattern portion in the thickness direction, the first conductive pattern portion and the second An insulating plate disposed between the conductive pattern portions to electrically insulate the first conductive pattern portion and the second conductive pattern portion; The first intermediate restoration part and the second intermediate restoration part have a shape curved in the horizontal direction to have a restoring force in an upward direction; The first conductive pattern portion and the second conductive pattern portion are arranged such that the first upper contact portion and the second upper contact portion are alternately arranged in the horizontal direction; The first intermediate restoration part and the second intermediate restoration part may be disposed to overlap each other in the thickness direction such that the distance between the first upper contact part and the second upper contact part adjacent in the horizontal direction is reduced.

Hereinafter, with reference to the accompanying drawings will be described embodiments of the present invention;

4 is a perspective view of a bidirectional conductive pattern module 10 for a semiconductor test according to an exemplary embodiment of the present invention, and FIG. 5 is a cross-sectional view taken along lines A1-A1 and A2-A2 of FIG. 4. 4 and 5, the bidirectional conductive pattern module 10 (hereinafter, referred to as a “bidirectional conductive pattern module 10”) for semiconductor testing according to an embodiment of the present invention may include a first conductive pattern portion ( 100, a second conductive pattern portion 200, and insulating

plates

310 and 320. Here, the first conductive pattern portion 100 and the second conductive pattern portion 200 will be described with reference to the drawings shown in FIG. 6.

The first conductive pattern unit 100 includes a plurality of first conductive lines 110 spaced apart from each other in the horizontal direction. Each first conductive line 110 includes a first upper contact 111, a second lower contact 212 and a first intermediate restoration 113.

When the bidirectional conductive pattern module 10 according to the exemplary embodiment of the present invention is applied to the semiconductor test socket 1000, the first upper contact 111 contacts a terminal of the semiconductor device. Here, the upper end of the first upper contact portion 111, as shown in Figure 6, having a rough shape in the vertical direction, such as the crown shape, so that the electrical contact with the terminal of the semiconductor device can be made more smoothly. Can be formed.

The first lower contact 112 contacts the terminal of the test circuit board when the bidirectional conductive pattern module 10 is applied to the semiconductor test socket 1000.

In addition, the first intermediate restoration part 113 electrically connects the first upper contact part 111 and the second lower contact part 212. Here, the first intermediate restoration part 113 has a shape that is bent in the horizontal direction to have a restoring force in the upper direction. In the embodiment shown in FIG. 6, the inside having the

curved shapes

114 and 115 on both sides in the horizontal direction has a circular shape in which an empty space 116 is formed. That is, for example, the

regions

114 and 115 are formed at both sides in the horizontal direction. As a result, when the terminal of the semiconductor device presses the first upper contact portion 111 to generate pressure in the downward direction, the terminal of the semiconductor device may elastically support it and have a restoring force in the upper direction when the semiconductor device is removed.

In the present invention, for example, the first conductive line 110 including the first upper contact 111, the first intermediate restoration 113, and the first lower contact 112 is integrally manufactured by processing a conductive metal sheet. do. For example, after the copper thin metal plate is processed as shown in FIG. 6 through an etching method or a stamping method, nickel and gold may be sequentially plated. In addition, various methods may be used to form the first conductive pattern portion 100 in which the plurality of second conductive lines 210 are formed in the horizontal direction using the conductive metal thin plate.

Similarly, the second conductive pattern portion 200 includes a plurality of second conductive lines 210 spaced apart from each other in the horizontal direction. Each second conductive line 210 includes a second upper contact portion 211, a second lower contact portion 212 and a second intermediate restoration portion 213.

When the bidirectional conductive pattern module 10 according to the embodiment of the present invention is applied to the semiconductor test socket 1000, the second upper contact portion 211 contacts terminals of the semiconductor device. Here, the upper end of the second upper contact portion 211 has a rough shape in the vertical direction, such as the crown shape, as shown in Figure 6, so that the electrical contact with the terminal of the semiconductor device can be made more smoothly Can be formed.

The second lower contact portion 212 is in contact with the terminal of the test circuit board when the bidirectional conductive pattern module 10 is applied to the semiconductor test socket 1000.

In addition, the second intermediate restoration part 213 electrically connects the second upper contact part 211 and the second lower contact part 212. Here, the second intermediate restoration part 213 has a shape that is bent in the horizontal direction to have a restoring force in the upper direction. In the embodiment illustrated in FIG. 6, the inside having the

curved shapes

214 and 215 on both sides in the horizontal direction has a circular shape in which an empty space 216 is formed. That is, for example, the

regions

114 and 115 are formed at both sides in the horizontal direction. As a result, when the terminal of the semiconductor device presses the second upper contact portion 211 to generate pressure in the downward direction, the terminal of the semiconductor device may elastically support it and have a restoring force in the upper direction when the semiconductor device is removed.

In the present invention, for example, the second conductive line 210 including the second upper contact portion 211, the second intermediate restoration portion 213, and the second lower contact portion 212 is integrally manufactured by processing a conductive metal sheet. do. For example, after the copper thin metal plate is processed as shown in FIG. 6 through an etching method or a stamping method, nickel and gold may be sequentially plated. In addition, various methods may be used to form the second conductive pattern portion 200 in which the plurality of second conductive lines 210 are formed in the horizontal direction using a thin conductive metal plate.

Here, the first conductive pattern portion 100 and the second conductive pattern portion 200 have a form overlapped in the thickness direction with the insulating

plates

310 and 320 interposed therebetween. In addition, the insulating

plates

310 and 320 are made of an insulating material, for example, an elastic silicone material, to electrically insulate the first conductive pattern portion 100 and the second conductive pattern portion 200.

Here, the first conductive pattern portion 100 and the second conductive pattern portion 200 may sandwich the insulating

plates

310 and 320 so that the first upper contact portion 111 and the second upper contact portion 211 are alternately arranged in the horizontal direction. As shown in FIG. 9A, the first intermediate restoration part 113 and the second intermediate restoration part 213 are disposed to overlap each other in the thickness direction, thereby forming a first upper part adjacent in the horizontal direction. As the distance between the contact portion 111 and the second upper contact portion 211 is reduced, the pitch of the semiconductor test socket 1000 may be reduced.

That is, as the first intermediate restoration part 113 and the second intermediate restoration part 213 have a shape of a 휜, the first intermediate restoration part 113 and the second intermediate restoration part 213 for providing a restoring force to the first conductive line 110 and the second conductive line 210 may have a shape. The width of the intermediate restoration portion 113 in the horizontal direction is formed to be wider than the width of the first upper contact portion 111 and the first lower contact portion 112 in the horizontal direction, and similarly, the width of the second intermediate restoration portion 213 The width in the direction is wider than the width in the horizontal direction of the second upper contact portion 211 and the second lower contact portion 212. Therefore, when the bidirectional conductive pattern module 10 is manufactured using only the first conductive pattern portion 100 or the second conductive pattern portion 200, the first intermediate restoration portion 113 or the second intermediate restoration portion 213 may be formed. Constrained by reducing the pitch by the width in the transverse direction.

On the other hand, the bidirectional conductive pattern module 10 according to the embodiment of the present invention overlaps the first conductive pattern portion 100 and the second conductive pattern portion 200 in the thickness direction with the insulating

plates

310 and 320 interposed therebetween. The first conductive line 110 of the first conductive pattern portion 100 and the second conductive line 210 of the second conductive pattern portion 200 are alternately arranged in the longitudinal direction, and the insulating

plates

310 and 320 are disposed. The first conductive pattern portion 100 and the second conductive pattern portion 200 overlapping each other (substantially insulate the region where the first intermediate restoration portion 113 and the second intermediate restoration portion 213 overlap). It is possible to remove the pitch constraint of the width of the first intermediate recovery unit 113 or the second intermediate recovery unit 213 in the horizontal direction.

Meanwhile, the first conductive pattern portion 100 of the bidirectional conductive pattern module 10 according to the embodiment of the present invention may include a plurality of first upper

auxiliary contact portions

221 and 121 and a plurality of first lower auxiliary contact portions 122. It may include. Similarly, the second conductive pattern portion 200 of the bidirectional conductive pattern module 10 according to the embodiment of the present invention may include a plurality of second upper auxiliary contact portions and a plurality of second lower auxiliary contact portions 222.

As shown in FIG. 6, the width in the horizontal direction of the first intermediate restoration part 113 is formed to be wider than the width in the horizontal direction of the first upper contact part 111, so that an interval between adjacent first upper contact parts 111 is provided. This state is kept spaced apart. Similarly, the width of the second intermediate restoration part 213 in the horizontal direction is formed to be wider than the width of the second upper contact part 211 in a horizontal direction, so that an interval between adjacent second upper contact parts 211 is spaced by a predetermined interval. Is maintained.

At this time, the first conductive pattern portion 100 and the second conductive pattern portion 200 are overlapped in the thickness direction with the insulating

plates

310 and 320 interposed therebetween, and one pair of adjacent first upper contact portions 111 is adjacent to each other. It is positioned between the second upper contact portion 211, and similarly, one second upper contact portion 211 is positioned between a pair of adjacent first upper contact portion 111.

Similarly, the width of the first intermediate restoration part 113 in the horizontal direction is formed to be wider than the width of the first lower contact part 112 in the horizontal direction, so that an interval between adjacent first lower contact parts 112 is spaced by a predetermined interval. Is maintained. Similarly, the width of the second intermediate restoration part 213 in the horizontal direction is formed to be wider than the width of the second lower contact part 212 in the horizontal direction, so that an interval between adjacent second lower contact parts 212 is spaced by a predetermined interval. Is maintained.

In this case, the first lower contact portion 112 is adjacent to each other in a state where the first conductive pattern portion 100 and the second conductive pattern portion 200 overlap in the thickness direction with the insulating

plates

310 and 320 interposed therebetween. It is positioned between the second lower contact portion 212, and similarly, one second lower contact portion 212 is positioned between the pair of adjacent first lower contact portions 112.

Here, each of the first upper

auxiliary contact portions

221 and 121 is disposed between the first upper contact portions 111 adjacent to each other, and is electrically insulated from the adjacent first conductive lines 110. . In addition, when the first conductive pattern portion 100 and the second conductive pattern portion 200 overlap with the insulating

plates

310 and 320 interposed therebetween, the first upper

auxiliary contact portions

221 and 121 are formed of the second conductive pattern portion ( It faces the second upper contact portion 211 of the (200).

In addition, each of the second upper auxiliary contacts is disposed between the second upper contact parts 211 adjacent to each other, and is electrically insulated from the adjacent second conductive lines 210. In addition, when the first conductive pattern portion 100 and the second conductive pattern portion 200 overlap with the insulating

plates

310 and 320 interposed therebetween, the second upper auxiliary contact portion is formed on the first upper portion of the first conductive pattern portion 100. It faces the contact 111.

The first upper contact 111 and the second upper auxiliary contact part facing each other, and the second upper contact part 211 and the first upper

auxiliary contact part

221 and 121 facing each other may be soldered (S) or the like. When electrically connected to each other through the first upper contact portion 111 and the second upper auxiliary contact portion to form a contact portion in contact with the terminal of the semiconductor element, the second upper contact portion 211 and the first upper auxiliary contact portion ( 221 and 121 form another contact portion in contact with the semiconductor device.

Likewise, each of the first lower auxiliary contacts 122 is disposed between the adjacent first lower contacts 112, respectively, and is electrically insulated from the adjacent first conductive lines 110. In addition, when the first conductive pattern portion 100 and the second conductive pattern portion 200 overlap with the insulating

plates

310 and 320 interposed therebetween, the first lower auxiliary contact portion 122 is formed of the second conductive pattern portion 200. It faces the second lower contact portion 212.

In addition, each second lower auxiliary contact portion 222 is disposed between the adjacent second lower contact portions 212, respectively, and is electrically insulated from the adjacent second conductive lines 210. In addition, when the first conductive pattern portion 100 and the second conductive pattern portion 200 overlap with the insulating

plates

310 and 320 interposed therebetween, the second lower auxiliary contact portion 222 is formed of the first conductive pattern portion 100. It faces the first lower contact 112.

The first lower contact portion 112 and the second lower auxiliary contact portion 222 facing each other, and the second lower contact portion 212 and the first lower auxiliary contact portion 122 facing each other may be soldered (S) or the like. When electrically connected to each other through, the first lower contact portion 112 and the second lower auxiliary contact portion 222 form a contact portion contacting the terminal of the semiconductor element, and the second lower contact portion 212 and the first lower portion The auxiliary contact 122 forms another contact with the semiconductor device.

Meanwhile, the bidirectional conductive pattern module 10 according to the exemplary embodiment of the present invention may further include insulating

bodies

330 and 340 as shown in FIG. 5. In the insulating

bodies

330 and 340, the first upper contact portion 111 and the second upper contact portion 211 protrude upward, and the first lower contact portion 112 and the second lower contact portion 212 protrude downward. The first conductive pattern portion 100 and the second conductive pattern portion 200 are provided to block both sides in the depth direction.

In the present invention, the insulating

bodies

330 and 340 are made of a silicon material. For example, when the bidirectional conductive pattern module 10 according to the present invention is applied to the semiconductor test socket 1000, the adjacent bidirectional conductive pattern module 10 is applied. It is possible to keep the states electrically insulated from each other.

Hereinafter, a method of manufacturing the bidirectional conductive pattern module 10 according to the embodiment of the present invention will be described with reference to FIGS. 6 to 10.

First, the conductive metal thin plate is processed to produce the first conductive pattern portion 100, as shown in FIG. Here, as the processing method of the conductive metal thin plate, an etching method, a stamping method, or the like may be applied.

The first conductive pattern portion 100 is formed with a plurality of first conductive lines 110 spaced apart from each other in a horizontal direction, and each of the first conductive lines 110 has a first upper contact portion 111 and a lower contact portion. And a first intermediate restoration unit 113. In addition, when the first conductive pattern portion 100 is formed, first upper

auxiliary contact portions

221 and 121 are formed between the first upper contact portions 111, and the first upper contact portions 111 are formed between the first lower contact portions 112. 1 The lower auxiliary contact portion 122 may be formed. Here, since the configuration of the first conductive pattern portion 100 is as described above, a detailed description thereof will be omitted.

When the first conductive pattern portion 100 is formed, the first conductive lines 110 adjacent to each other may be formed to be connected to each other. In the present invention, as shown in Figure 6 (a), the first upper contact portion 111 is connected to the adjacent first upper contact portion 111 through the first upper auxiliary contact portion (221, 121), the first The lower contact 112 may be connected to the adjacent first lower contact 112 through the first lower auxiliary contact 122.

Here, the

jig plates

131 and 132 may be formed on both sides of the first conductive pattern portion 100 when the conductive metal thin plate is processed. In addition, through

holes

133 and 134 may be formed in the

jig plates

131 and 132. As a result, the first conductive pattern portion 100 may be fixed to the working position during plating or manufacturing of the conductive metal sheet in a state where the through

holes

133 and 134 of the

jig plates

131 and 132 are inserted into the fixing jig. do.

Similarly, the conductive metal thin plate is processed to produce the second conductive pattern portion 200 as shown in Fig. 6B. Here, as the processing method of the conductive metal thin plate, an etching method, a stamping method, or the like may be applied.

The second conductive pattern portion 200 is formed with a plurality of second conductive lines 210 spaced apart from each other in a horizontal direction, and each of the second conductive lines 210 has a second upper contact portion 211 and a lower contact portion. And a second intermediate restoration unit 213. In addition, when the second conductive pattern part 200 is formed, a second upper auxiliary contact part is formed between the second upper contact parts 211, and a second lower auxiliary contact part 222 between the second lower contact parts 212. ) May be formed. Here, the configuration of the second conductive pattern portion 200 is as described above, and thus its detailed description is omitted.

When the second conductive pattern portion 200 is formed, the second conductive lines 210 adjacent to each other may be formed to be connected to each other. In the present invention, as shown in Figure 6 (b), the second upper contact portion 211 is connected to the adjacent second upper contact portion 211 through the second upper auxiliary contact portion, the second lower contact portion 212 is The second lower contact portion 222 may be connected to an adjacent second lower contact portion 212.

Here, the

jig plates

231 and 232 may be formed on both sides of the second conductive pattern portion 200 when the conductive metal thin plate is processed. In addition, through

holes

233 and 234 may be formed in the

jig plates

231 and 232. As a result, in the state where the through

holes

233 and 234 of the

jig plates

231 and 232 are inserted into the fixing jig, the second conductive pattern portion 200 may be fixed to the working position during plating or manufacturing of the conductive metal sheet. do.

When the first conductive pattern portion 100 and the second conductive pattern portion 200 are formed as described above, an insulating plate is formed between the first conductive pattern portion 100 and the second conductive pattern portion 200. A process of fabricating the first conductive pattern portion 100 and the second conductive pattern portion 200 so as to be spaced apart from each other in the thickness direction is performed.

First, as shown in FIG. 8A, the first insulating part 310 is formed on one surface of the first conductive pattern part 100. Here, the first insulating part 310 may be formed by coating liquid silicone of an insulating material on one surface of the first conductive pattern part 100 and curing it. In this case, the upper region of the first upper contact portion 111 protrudes above the first insulation portion 310, and the lower region of the first lower contact portion 112 protrudes above the first insulation portion 310. The first insulating part 310 is formed in the middle region of the first conductive pattern part 100.

To this end, as shown in Figure 7 (a), after attaching the tape to the first upper contact 111 and the first lower contact 112 of the portion protruding from the first insulating portion 310, the liquid By applying silicon and removing the tape before curing, the first insulating portion 310 having a shape as shown in FIG. 8A can be formed.

Here, the first insulation unit 310 may cover, for example, an entire region where the first intermediate restoration unit 113 and the second intermediate restoration unit 213 overlap, for example, the entire first intermediate restoration unit 113. May be provided to be blocked. That is, when the first conductive pattern portion 100 and the second conductive pattern portion 200 overlap the thickness direction, the first conductive line 110 and the second conductive line 210 may be electrically insulated from each other. The length of the insulating portion 310 in the vertical direction is determined.

Similarly, as shown in FIG. 8B, the second conductive part 320 is formed on one surface of the second conductive pattern part 200. Here, the second insulation part 320 may be formed by applying liquid silicone of an insulating material to one surface of the second conductive pattern part 200 and curing it. At this time, the upper region of the second upper contact portion 211 protrudes to the upper portion of the second insulation portion 320, and the lower region of the second lower contact portion 212 protrudes to the upper portion of the second insulation portion 320. The second edge portion 320 is formed in the middle region of the second conductive pattern portion 200.

To this end, as shown in Figure 7 (b), after attaching the tape to the second upper contact portion 211 and the second lower contact portion 212 of the portion protruding from the second edge portion 320, the liquid phase By applying the silicon and removing the tape before curing, the second edge portion 320 having a shape as shown in FIG. 8B can be formed.

Here, for example, the entire second intermediate restoring unit 213 may cover the area where the first intermediate restoring unit 113 and the second intermediate restoring unit 213 overlap each other. May be provided to be blocked. That is, when the first conductive pattern portion 100 and the second conductive pattern portion 200 overlap the thickness direction, the second conductive line 110 and the second conductive line 210 may be electrically insulated from each other. The length in the vertical direction of the edge portion 320 may be determined.

As described above, when the first insulating portion 310 is formed in the first conductive pattern portion 100, and the second insulation portion 320 is formed in the second conductive pattern portion 200, the first conductive pattern portion ( 100 and the second conductive pattern portion 200 are attached in the thickness direction.

At this time, the shape overlapping in the thickness direction of the first conductive pattern portion 100 and the second conductive pattern portion 200 is as shown in Fig. 9A. In more detail, the first intermediate restoration part 113 and the second intermediate restoration part 213 overlap each other in the thickness direction, and the upper region includes the first upper contact part 111 and the second upper contact part 211. Are alternately arranged, and the lower region has a form in which the first lower contact portion 112 and the second lower contact portion 212 are alternately disposed.

The first upper contact portion 111 faces the second upper auxiliary contact portion, and the second upper contact portion 211 faces the first upper

auxiliary contact portions

221 and 121. Similarly, the first lower contact portion 112 faces the second lower auxiliary contact portion 222, and the second lower contact portion 212 faces the first lower auxiliary contact portion 122.

Here, in the present invention, when the first conductive pattern portion 100 and the second conductive pattern portion 200 are disposed in the thickness direction, as shown in FIG. 9B, the first insulating portion 310 and The second insulation portions 320 may be attached to face each other to be fixed so that the first conductive pattern portion 100 and the second conductive pattern portion 200 face each other. In this case, the first insulation part 310 and the second insulation part 320 are attached to each other to form the

insulation plates

310 and 320 described above.

As another example, an opposite surface of the second insulation portion 320 of the second conductive pattern portion 200 may be attached to the first insulation portion 310. In this case, the first insulation portion 310 forms the

insulation plates

310 and 320, and the second insulation portion 320 forms part of the

insulation bodies

330 and 340.

As described above, when the first conductive pattern portion 100 and the second conductive pattern portion 200 are fixed to face each other, as shown in FIG. 9B, the first upper contact portion 111 and the second upper auxiliary portion are fixed. The contact portion, the second upper contact portion 211 and the first upper

auxiliary contact portion

221, 121, the first lower contact portion 112 and the second lower auxiliary contact portion 222, the second lower contact portion 212 and the first lower portion; By electrically connecting the auxiliary contact portion 122 to each other through a soldering (S) or the like, the contact portion on the upper side and the contact portion on the lower side are formed.

Thereafter, the first upper contact 111 and the second upper contact 211 protrude upwards, and the first lower contact 112 and the second lower contact 212 protrude downwards. By insulating both sides of the conductive pattern part 100 and the second conductive pattern part 200 in the depth direction with an insulating material, for example, a silicon material, as shown in FIGS. 4, 5, and 10, the insulating

main bodies

330 and 340. ).

Then, as shown in FIG. 10, the connection site between the first conductive line 110 and the second conductive line 210, that is, the first upper contact 111, as shown in FIG. 10 through laser machining. ) And the connecting portion between the first upper

auxiliary contact portions

221 and 121, the connecting portion between the first lower contact portion 112 and the first lower auxiliary contact portion 122, the second upper contact portion 211 and the second upper portion. By cutting the connection between the auxiliary contacts and between the second lower contact 212 and the second lower auxiliary contact 222, the first conductive lines 110 are electrically insulated and the second conductive line ( The 210 is electrically insulated, thereby completing the manufacture of the bidirectional conductive pattern module 10.

In the above-described embodiment, the first insulating part 310 and the second insulation part 320 are formed on the first conductive pattern part 100 and the second conductive pattern part 200, respectively, and then attached to each other. In addition, the first insulating part 310 is formed only on the first conductive pattern part 100, and the first conductive pattern part 100 is disposed with the second conductive pattern part 200 interposed between the first insulating part 310. And to be spaced apart in the depth direction. In this case, the first insulating part 310 forms the insulating

plates

310 and 320, and both sides of the depth direction may be electrically insulated from each other by forming the insulating

bodies

330 and 340.

Hereinafter, the semiconductor test socket 1000 according to the exemplary embodiment of the present invention will be described in detail with reference to FIG. 11.

As illustrated in FIG. 11, the semiconductor test socket 1000 according to an exemplary embodiment of the present invention includes an inner housing 1100, a plurality of bidirectional conductive pattern modules 10, and an outer housing 1200.

The inner housing 1100 has a square shape that is open in the vertical direction. In addition, a plurality of slits 1110 are formed from an upper side to a lower side corresponding to a pair of opposite sides of the inner housing 1100.

Each bidirectional conductive pattern module 10 is inserted into a pair of slots facing each other, respectively. Here, both side edges of the insulating

main bodies

330 and 340 of the bidirectional conductive pattern module 10 are inserted into slots on both sides, respectively, and are installed in the inner housing 1100.

The outer housing 1200 is provided in a hollow frame shape, and is coupled to the inner housing 1100 so that the plurality of bidirectional conductive pattern modules 10 are exposed upward. When the external housing 1200 is fixed to the test apparatus by pressing downward, the first lower contact portion 112 (and the second lower auxiliary contact portion 222) and the second lower portion of the bidirectional conductive pattern module 10 are fixed. The contact portion 212 (and the first lower auxiliary contact portion 122) remains in contact with the pad of the test device. Here, the bolt hole 1210 is formed in the outer housing 1200, it may be fastened by the bolt passing through the bolt hole 1210.

As described above, the semiconductor test socket 1000 may be manufactured by inserting the bidirectional conductive pattern module 10 into the slit 1110 of the inner housing 1100, thereby making the manufacturing method simpler.

In addition, even if the number of terminals of the semiconductor device is changed, only the number of slots of the inner housing 1100 and the number of conductive lines in the vertical direction of the bidirectional conductive pattern module 10 are varied to manufacture the same method, thereby making various patterns. It is possible to manufacture a semiconductor test socket 1000 for testing a semiconductor device.

In addition, the plurality of bidirectional conductive pattern modules 10 may be sequentially attached in a thickness direction and then inserted and fixed in a specific housing, in addition to the method of inserting the same into the inner housing 1100 having the same shape as that of the semiconductor test socket 1000. It will be possible to make it.

In the above-described embodiment, the first intermediate restoring unit 113 and the second intermediate restoring unit 213 have an empty circle shape having an inner shape having both sides in the horizontal direction. In addition, as shown in Figure 12, it may be provided in various forms that can provide a restoring force in the upper direction. For example, as illustrated in FIGS. 12A and 12E, an interior having a shape that is curved in both sides of the horizontal direction may be provided as an empty ellipse shape.

In addition, as shown in (c), (d) and (f) of FIG. 12, provided as having a C shape, or an inverted C shape in the horizontal direction, or as shown in FIG. 12B. Of course, it can be provided to have an S shape or an inverted S shape.

Although some embodiments of the invention have been shown and described, it will be apparent to those skilled in the art that modifications may be made to the embodiment without departing from the spirit or spirit of the invention. . It is intended that the scope of the invention be defined by the claims appended hereto and their equivalents.

[Description of the code]

10: bidirectional conductive pattern module 100: first conductive pattern portion

110: first conductive line 111: first upper contact portion

112: first lower contact portion 113: first intermediate restoration portion

121: first upper auxiliary contact portion 122: first lower auxiliary contact portion

131,132,231,232: Jig Plate

133, 134, 233, 234: through hole 200: second conductive pattern portion

210: second conductive line 211: second upper contact portion

212: second lower contact portion 213: second intermediate restoration portion

221: first upper auxiliary contact portion 222: second lower auxiliary contact portion

310: first insulation portion 320: second insulation portion

330,340: insulating body 1000: semiconductor test socket

1100: inner housing 1110: slit

1200: outer housing 1210: bolt hole

The present invention can be applied to the inspection of the electrical performance or burn-in test in the manufacturing process of semiconductor devices, printed circuit boards, LCD displays and the like.

Claims

In the bidirectional conductive pattern module for semiconductor testing,

A plurality of first conductive lines each having a first upper contact portion, a first lower contact portion, and a first intermediate restoration portion electrically connecting the first upper contact portion and the first lower contact portion to be spaced apart from each other in the horizontal direction; A first conductive pattern portion,

A plurality of second conductive lines each having a second upper contact portion, a second lower contact portion, and a second intermediate restoration portion electrically connecting the second upper contact portion and the second lower contact portion to be spaced apart from each other in the horizontal direction; A second conductive pattern portion spaced apart from the first conductive pattern portion in a thickness direction;

An insulating plate disposed between the first conductive pattern portion and the second conductive pattern portion to electrically insulate the first conductive pattern portion and the second conductive pattern portion;

The first intermediate restoration part and the second intermediate restoration part have a shape curved in the horizontal direction to have a restoring force in an upward direction;

The first conductive pattern portion and the second conductive pattern portion are arranged such that the first upper contact portion and the second upper contact portion are alternately arranged in the horizontal direction;

And the first intermediate restoration part and the second intermediate restoration part are disposed to overlap each other in the thickness direction such that a distance between the first upper contact part and the second upper contact part adjacent in the horizontal direction is reduced. Conductive pattern module.
The method of claim 1,

The first upper contact portion, the first intermediate restoring portion, and the first lower contact portion are integrally manufactured by processing a conductive metal sheet to form the first conductive line;

And the second upper contact portion, the second intermediate restoration portion, and the second lower contact portion are integrally manufactured by processing a conductive metal sheet to form the second conductive line.
The method of claim 1,

The width of the first intermediate restoration part in the horizontal direction is wider than the width of the first upper contact part and the first lower contact part in the horizontal direction, so that a gap between the adjacent first upper contact parts and the first lower contact part are adjacent to each other. The spacing between the contacts is kept at a predetermined interval apart;

The width in the horizontal direction of the second intermediate restoration part is formed to be wider than the width in the horizontal direction of the second upper contact part and the second lower contact part, so that a gap between the second upper contact parts adjacent to each other and the second lower contact part are formed. The spacing between the contacts is kept at a predetermined interval apart;

In the state where the first conductive pattern portion and the second conductive pattern portion are overlapped in the thickness direction with the insulating plate interposed therebetween, one of the first upper contact portion and the first lower contact portion is disposed between the adjacent second upper contact portions. A second upper contact portion and a second lower contact portion located between the first upper contact portion adjacent to each other and the first lower contact portion adjacent to each other; Bidirectional conductive pattern module for.
The method of claim 3,

The first conductive pattern portion further comprises a plurality of first upper auxiliary contact portions disposed between the first upper contact portions adjacent to each other and electrically insulated from the adjacent first conductive lines;

The second conductive pattern portion further includes a plurality of second upper auxiliary contact portions disposed between the second upper contact portions adjacent to each other and electrically insulated from the adjacent second conductive lines;

Each of the first upper auxiliary contacts is electrically connected to the second upper contact at a corresponding position;

Wherein each second upper auxiliary contact is electrically connected to the first upper contact at a corresponding position.
The method of claim 4, wherein

The first conductive pattern portion further comprises a plurality of first lower auxiliary contact portions disposed between the first lower contact portions adjacent to each other and electrically insulated from the adjacent first conductive lines;

The second conductive pattern portions further include a plurality of second lower auxiliary contacts respectively disposed between the second lower contact portions adjacent to each other and electrically insulated from the adjacent second conductive lines;

Each of the first lower auxiliary contacts is electrically connected to the second lower contact at a corresponding position;

Wherein each of the second lower auxiliary contacts is electrically connected to the first lower contact at a corresponding position.
The method of claim 5,

The first upper contact portion and the second upper auxiliary contact portion are electrically connected to each other through soldering;

The second upper contact portion and the first upper auxiliary contact portion are electrically connected to each other through soldering;

The first lower contact portion and the second lower auxiliary contact portion are electrically connected to each other through soldering;

And the second lower contact portion and the first lower auxiliary contact portion are electrically connected to each other through soldering.
The method of claim 1,

At least one of the first restoring unit and the second restoring unit

A hollow circular shape having an inner shape on both sides of the horizontal direction,

An empty ellipse shape having an inner shape in both sides of the horizontal direction,

C shape,

Inverted C shape in the transverse direction,

S-shaped, and

A bidirectional conductive pattern module for semiconductor testing, characterized in that it is provided in any one of an inverted S shape in the horizontal direction.
The method of claim 1,

The first conductive pattern portion and the second conductive pattern portion may protrude in a state in which the first upper contact portion and the second upper contact portion protrude upwards, and the first lower contact portion and the second lower contact portions protrude downward. The bidirectional conductive pattern module for semiconductor test, characterized in that it further comprises an insulating body of insulating material blocking both sides of the depth direction.
An inner housing having a rectangular shape open in the vertical direction and having a plurality of slots formed from top to bottom to correspond to a pair of mutually opposite sides;

A plurality of bidirectional conductive pattern modules for semiconductor testing according to any one of claims 1 to 8, which are respectively inserted into a pair of slots facing each other;

And an outer housing coupled to the inner housing such that a plurality of bidirectional conductive pattern modules for a semiconductor test are exposed upwardly.
In the manufacturing method of the bidirectional conductive pattern module for semiconductor testing,

(a) cross a plurality of first conductive lines having a first upper contact portion, a first lower contact portion, and a first intermediate restoring portion electrically connecting the first upper contact portion and the first lower contact portion by machining a conductive metal thin plate; Forming a first conductive pattern portion by being spaced apart from each other in a direction, wherein the adjacent first conductive lines have a mutually connected state;

(b) cross a plurality of second conductive lines having a second upper contact portion, a second lower contact portion, and a second intermediate restoring portion electrically connecting the second upper contact portion and the second lower contact portion, respectively, by processing the conductive metal sheet; Forming a second conductive pattern portion by being spaced apart from each other in a direction, wherein the adjacent second conductive lines have an interconnected state;

(c) an insulating plate is formed between the first conductive pattern portion and the second conductive pattern portion to electrically insulate the first conductive pattern portion and the second conductive pattern portion, thereby forming the first conductive pattern portion and the first conductive pattern portion. 2 the conductive pattern portion is disposed spaced apart from each other in the thickness direction,

(d) a connection portion between the first conductive lines in the interconnected state and a connection region between the second conductive lines in the interconnected state is cut to electrically insulate the first conductive lines and electrically connect the second conductive lines. Insulating with;

In the steps (a) and (b), the first intermediate restoration part and the second intermediate restoration part are processed to have a shape curved in the horizontal direction to have a restoring force in an upward direction;

In the step (c), the first upper contact portion and the second conductive pattern portion are alternately arranged in the horizontal direction, and the first lower contact portion and the second lower contact portion are alternately arranged in the horizontal direction. Are arranged so that they are alternately arranged in the transverse direction;

In the step (c), the first intermediate restoring portion and the second intermediate restoring portion are arranged to overlap in the thickness direction such that the distance between the first upper contact portion and the second upper contact portion adjacent in the horizontal direction is reduced. The manufacturing method of the bidirectional conductive pattern module for semiconductor tests.
The method of claim 10,

Step (c) is

(c1) an upper region of the first upper contact portion and a lower region of the first lower contact portion protrude in the upper and lower directions, respectively, and on one surface of the first conductive pattern portion so that the first intermediate restoration portion is blocked in the depth direction; Forming a first insulation;

(c2) attaching the second conductive pattern portion to the first insulating portion in the thickness direction to form the insulating plate by the first insulating portion. Manufacturing method.
The method of claim 10,

Step (c) is

(c1) an upper region of the first upper contact portion and a lower region of the first lower contact portion protrude in the upper and lower directions, respectively, and on one surface of the first conductive pattern portion so that the first intermediate restoration portion is blocked in the depth direction; Forming a first insulation;

(c2) an upper region of the second upper contact portion and a lower region of the second lower contact portion may protrude in the upper and lower directions, respectively, and on one surface of the second conductive pattern portion so that the second intermediate restoration portion is blocked in the depth direction; Forming a second insulation;

(c3) forming the insulating plate between the first conductive pattern portion and the second insulating pattern portion by attaching the first insulating portion and the second insulating portion to each other in the thickness direction. Method of manufacturing a bidirectional conductive pattern module for semiconductor testing.
The method of claim 10,

The method of manufacturing the bidirectional conductive pattern module for semiconductor test, characterized in that any one of an etching method and a stamping method is applied to the processing of the conductive metal thin plate in the steps (a) and (b).
The method of claim 10,

In the step (a), a first upper auxiliary contact portion is formed between the first upper contact portions adjacent to each other so that the first upper contact portion and the first upper auxiliary contact portion are alternately formed in the horizontal direction;

In the step (b), a second upper auxiliary contact portion is formed between the second upper contact portions adjacent to each other so that the second upper contact portion and the second upper auxiliary contact portion are alternately formed in the horizontal direction;

The first upper contact portion and the first upper auxiliary contact portion which are adjacent to each other in the step (a) are connected to each other so that the connection portion is cut in the step (d);

The second upper contact portion and the second upper auxiliary contact portion which are adjacent to each other in the step (b) are connected to each other so that the connection portion is cut in the step (d);

Step (c) is

Electrically connecting the first upper contact and the second upper auxiliary contact at mutually corresponding positions;

And electrically connecting the second upper contact portion and the first upper auxiliary contact portion at mutually corresponding positions.
The method of claim 14,

In the step (a), a first lower auxiliary contact portion is formed between the first lower contact portions adjacent to each other so that the first lower contact portion and the first lower auxiliary contact portion are alternately formed in the horizontal direction;

In the step (b), a second lower auxiliary contact part is formed between the second lower contact parts adjacent to each other so that the second lower contact part and the second lower auxiliary contact part are alternately formed in the horizontal direction;

The first lower contact portion and the first lower auxiliary contact portion which are adjacent to each other in the step (a) are connected to each other so that the connection portion is cut in the step (d);

The second lower contact portion and the second lower auxiliary contact portion which are adjacent to each other in the step (b) are connected to each other so that the connection portion is cut in the step (d);

Step (c) is

Electrically connecting the first lower contact and the second lower auxiliary contact at mutually corresponding positions;

And electrically connecting the second lower contact portion and the first lower auxiliary contact portion at mutually corresponding positions.
The method of claim 15,

The first upper contact portion and the second upper auxiliary contact portion are electrically connected to each other through soldering;

The second upper contact portion and the first upper auxiliary contact portion are electrically connected to each other through soldering;

The first lower contact portion and the second lower auxiliary contact portion are electrically connected to each other through soldering;

And the second lower contact portion and the first lower auxiliary contact portion are electrically connected to each other through soldering.
The method of claim 10,

The first conductive pattern portion and the second conductive pattern portion may protrude in a state in which the first upper contact portion and the second upper contact portion protrude upwards, and the first lower contact portion and the second lower contact portions protrude downward. The method of manufacturing a bidirectional conductive pattern module for semiconductor testing, further comprising forming an insulating body by blocking both sides of the depth direction with an insulating material.