WO2017126035A1 - Dispositif de source de lumière laser et son procédé de fabrication - Google Patents

Dispositif de source de lumière laser et son procédé de fabrication Download PDF

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Publication number
WO2017126035A1
WO2017126035A1 PCT/JP2016/051450 JP2016051450W WO2017126035A1 WO 2017126035 A1 WO2017126035 A1 WO 2017126035A1 JP 2016051450 W JP2016051450 W JP 2016051450W WO 2017126035 A1 WO2017126035 A1 WO 2017126035A1
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WIPO (PCT)
Prior art keywords
semiconductor laser
laser array
array
heat sink
submount
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PCT/JP2016/051450
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English (en)
Japanese (ja)
Inventor
充輝 二見
一貴 池田
山本　修平
矢部　実透
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三菱電機株式会社
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Priority to PCT/JP2016/051450 priority Critical patent/WO2017126035A1/fr
Publication of WO2017126035A1 publication Critical patent/WO2017126035A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

Definitions

  • the present invention relates to a laser light source device using a semiconductor laser array and a manufacturing method thereof.
  • a semiconductor laser array As a high-power semiconductor laser, it is common to use a semiconductor laser array in which a plurality of light emitting points are arranged in one bar.
  • warpage along the arrangement direction of the light emitting points becomes a problem.
  • the influence of warpage on optical characteristics is serious.
  • the microlens array arranged on the optical axis of the outgoing light of the semiconductor laser array has an optical working surface for collimating the fast axis direction on the incident side and an optical working surface for collimating the slow axis direction On the exit side.
  • the warp causes a deviation between the optical axis of the light emitting point at the center of the semiconductor laser array and the optical axis of the light emitting point at the end. Therefore, when the light emitted from the semiconductor laser array passes through the microlens array, the light beam at the end is largely deflected.
  • Patent Document 1 a protrusion is provided at the end of the submount to suppress warpage that occurs when the semiconductor laser array is mounted on the submount or the heat sink.
  • Patent Document 2 a semiconductor laser array having a warp is corrected by disposing and bonding submounts in which copper and tungsten are stacked above and below the semiconductor laser array.
  • Increase in residual stress has various effects on laser characteristics. For example, in the case of a red semiconductor laser array using GaAs as a substrate, if the residual stress in the compression direction increases near the interface with the submount or heat sink directly below it, the laser output decreases and the oscillation wavelength shifts to the short wavelength side. To do. Further, the residual stress increases the lattice defects in the active layer of the laser, leading to dark line degradation.
  • the present invention provides a technique capable of reducing the influence of warpage of a semiconductor laser array and suppressing an increase in residual stress and a deterioration in thermal resistance in a laser light source device using a semiconductor laser array. For the purpose.
  • a laser light source device includes a semiconductor laser array having a plurality of light emitting points, and a microlens array disposed on an optical axis of light emitted from the semiconductor laser array, and the semiconductor laser array emits the light emission
  • the microlens array is curved in the same direction as the warp of the semiconductor laser array, having a concave or convex warp along the arrangement direction of the dots.
  • a laser light source device includes a semiconductor laser array having a plurality of light emitting points, and a microlens array disposed on the optical axis of the emitted light of the semiconductor laser array.
  • the microlens array is curved in the same direction as the warp of the semiconductor laser array.
  • the optical axis of the light emitting point of the semiconductor laser array and the optical axis of the microlens array are coaxial, the deflection of the light beam can be suppressed. Thereby, the influence of the warp of the semiconductor laser array can be reduced.
  • the allowable range of the warp amount of the semiconductor laser array is widened, it is possible to adopt a structure in which the residual stress of the semiconductor laser array is kept low and a structure with low thermal resistance. Thereby, increase of residual stress and deterioration of thermal resistance can be suppressed.
  • FIG. 1 is a perspective view of a laser light source device 1 according to an embodiment.
  • xyz coordinate axes are appropriately shown in the drawing.
  • the + x direction and the ⁇ x direction are collectively referred to as an x-axis direction
  • the + y direction and the ⁇ y direction are collectively referred to as a y-axis direction
  • the + z direction and the ⁇ z direction are collectively referred to as a z-axis direction.
  • the laser light source device 1 includes a semiconductor laser array 10, a submount 20, a microlens array 30, a heat sink 41, and a plate 42.
  • the semiconductor laser array 10 is a red semiconductor laser obtained by epitaxially growing an AlGaInP-based compound semiconductor on a GaAs substrate.
  • the semiconductor laser array 10 is a broad area laser having two or more (plural) emission points, and each emission point has a wide stripe in the arrangement direction (x-axis direction) of the emission points.
  • the resonator length (z-axis direction length) is 0.5 mm or more and 2.0 mm or less
  • the lateral width (x-axis direction length) is 4 mm or more and 15 mm or less, which is a long dimension in the x-axis direction.
  • the horizontal width is preferably optimized mainly by the output specifications of the laser light source device.
  • the laser light source device 1 exerts a more remarkable effect in a long semiconductor laser array in which such a high output operation is expected. That is, the longer the horizontal width of the semiconductor laser array, the larger the amount of deviation of the light emitting point in the z-axis direction, and the greater the influence of warpage on the optical characteristics.
  • the semiconductor laser array 10 has a convex warp along the arrangement direction of the light emitting points. Details of the convex warpage will be described later.
  • FIG. 2 is a perspective view of the submount 20.
  • the semiconductor laser array 10 is bonded to one of two main surfaces facing each other along the epitaxial growth direction (x-axis direction).
  • the submount 20 includes a base material 21 and conductive layers 22, 23, and 24, and is electrically connected by the semiconductor laser array 10, the conductive layers 22 and 23, and the wires 25.
  • the base material 21 SiC or AlN having a linear expansion coefficient smaller than that of the heat sink 41 and higher thermal conductivity is used.
  • Cu is used as a material for the conductive layers 22, 23, and 24.
  • the conductive layers 22, 23, and 24 form a layer on the base material 21 by film formation by vacuum deposition or plating, or bonding by diffusion bonding or the like. Note that the conductive layer 24 is not intended to supply power, and is provided to suppress the warpage of the submount due to the difference in linear expansion coefficient between the base material 21 and the conductive layers 22 and 23.
  • FIG. 3 is a perspective view of the microlens array 30, and FIG. 4 is a perspective view of the microlens array 30 viewed from another direction.
  • the microlens array 30 includes an optical action surface 31 and an optical action surface 32.
  • the optical action surface 31 is a surface for collimating the fast axis (z-axis direction)
  • the optical action surface 32 is a surface for collimating the slow axis direction (x-axis direction).
  • the optical action surface 31 is provided on the side close to the semiconductor laser array 10, and the optical action surface 32 is provided on the side facing the optical action surface 31 (that is, the side far from the semiconductor laser array 10).
  • the microlens array 30 has a convex curve along the arrangement direction of the light emitting points. That is, the microlens array 30 is curved in the same direction as the warp of the semiconductor laser array 10.
  • the optical action surface 31 is a cylindrical lens array
  • the optical action surface 32 is a cylindrical lens array rotated by 90 ° with respect to the optical action surface 31.
  • Each cylindrical lens array is composed of at least as many cylindrical lenses as the light emitting points of the semiconductor laser array 10.
  • the cylindrical lens array on the optical action surface 31 is arranged so that the optical axis of each cylindrical lens is coaxial with the optical axis of the light emitting point of the corresponding semiconductor laser array 10. Thereby, even if the light emitting points of the semiconductor laser array 10 have shifted in the z-axis direction, the optical axis of the cylindrical lens is coaxial with respect to the respective light emitting points, so that the deflection of the light beam can be suppressed.
  • each cylindrical lens is arranged at the same interval as the light emitting points of the semiconductor laser array 10.
  • FIG. 5 is a yz plane sectional view of the laser light source device 1.
  • the plate 42 is inserted for the purpose of height adjustment for securing a space when the microlens array 30 is arranged in front of the semiconductor laser array 10 (+ y direction). For this reason, the plate 42 is disposed at a position where it does not interfere with the microlens array 30, and is further disposed along the emission end face of the semiconductor laser array 10 as shown in FIG.
  • the heat exhaust path of the heat generated near the emission end face of the semiconductor laser array 10 during heat generation during the laser operation is limited to the direction excluding the microlens array 30 side. Therefore, from the viewpoint of lowering the thermal resistance, it is necessary to ensure that the plate 42 has a space for arranging the microlens array 30 and is made as thin as possible so as to transfer heat to the heat sink 41 as soon as possible. Further, Cu or Al as the material of the heat sink 41 and the plate 42 has a large linear expansion coefficient with respect to GaAs as the material of the semiconductor laser array 10 or SiC or AlN as the main material of the submount 20. Therefore, from the viewpoint of reducing the residual stress of the semiconductor laser array 10, it is desirable to reduce the total thickness of the heat sink 41 and the plate 42 as much as possible.
  • the laser light source device 1 according to the present embodiment is characterized in that the semiconductor laser array 10, the submount 20, the heat sink 41, and the plate 42 are joined by a single heating and pressing process using solder.
  • solder As the solder used at the time of joining, it is desirable to use AuSn solder having excellent reliability and thermal conductivity.
  • the melting point of the AuSn solder varies depending on the ratio of Au and Sn, but is approximately 300 ° C. or higher and 340 ° C. or lower.
  • FIG. 6 is a graph showing a temperature profile of the bonding process in the method for manufacturing the laser light source device 1
  • FIG. 7 is a diagram for explaining how the laser light source device 1 is warped in the bonding process. Note that states 1 to 3 in FIG. 7 indicate states of the laser light source device 1 in the range of states 1 to 3 indicated by the range of arrows in the temperature profile of FIG.
  • State 1 in FIG. 7 shows a state in which each member is not warped before joining. Since the temperature and load are uniformly applied when the members come in contact with each other at the time of heating and pressurization, it is desirable that each component before joining has no warp or has a small warp as in State 1.
  • State 2 in FIG. 7 shows a state in which each member is attached at a high temperature exceeding the melting point of the solder in the heating and pressurizing steps. Since the solder is a liquid above the melting point, the contact interfaces are not constrained to each other and no stress is generated. In order to uniformly apply the temperature to each member, the heating is performed from both directions of the upper surface of the semiconductor laser array 10 and the lower surface of the heat sink 41. Moreover, in order to prevent the position shift of each member, it is necessary to apply the pressure before exceeding the melting point of the solder. After the heating and pressurizing steps for a predetermined time, the temperature is lowered and the pressure is released, but pressure is applied until the temperature falls below the melting point of the solder for the reason described above.
  • State 3 in FIG. 7 shows a state where the cooling has progressed to a temperature below the melting point of the solder through the heating and pressurizing steps. Solder has changed to a solid state, and each member is constrained at each joint interface. Accordingly, thermal stress is generated from the difference in linear expansion coefficient of each member, and increases as the temperature decreases starting from the melting point of the solder.
  • the semiconductor laser array 10, the submount 20, the plate 42, and the heat sink 41 are symmetrically positioned with respect to the center in the arrangement direction of the light emitting points in plan view. Placed in. That is, by joining these members so as to be bilaterally symmetric with respect to the arrangement direction of the light emitting points, the thermal stress after joining is generated uniformly in the left and right directions, and the warped shape is also bilaterally symmetric. Therefore, the coupling efficiency between the emitted light of the semiconductor laser array 10 and the curved microlens array 30 is stabilized.
  • the axis of symmetry at this time is shown as an axis 100 in FIG. Note that the amount or shape of the warp generated in the state 3 in FIG. 7 varies depending on the material or size of the submount 20, the heat sink 41, and the plate 42.
  • FIG. 8 is a diagram illustrating a state where the microlens array 30 is bonded to the heat sink 41.
  • the microlens array 30 is aligned by active alignment, and the microlens array 30 is bonded to the heat sink 41 using an epoxy adhesive 51. Curing of the adhesive 51 is performed in two stages, and after the temporary curing by ultraviolet irradiation immediately after the bonding, a heat treatment process is performed to thermally cure.
  • epoxy-based adhesives have a large linear expansion coefficient (50 ⁇ 10 ⁇ 6 / ° C. or more and 100 ⁇ 10 ⁇ 6 / ° C. or less), so that the lens moves and condenses as the operating temperature of the laser light source device changes. There is concern about the deterioration of sex.
  • the amount of the epoxy adhesive 51 arranged between the microlens array 30 and the heat sink 41 is adjusted so that the thickness of the plate 42 is the minimum necessary thickness. ing. Therefore, the displacement of the microlens array 30 is minimized.
  • FIG. 8 by applying an epoxy adhesive 51 only to a partial region of the microlens array 30, the lens of the microlens array 30 and the heat sink 41 are caused by a difference in linear expansion coefficient. Prevents cracking or adhesive peeling.
  • the wiring process of the laser light source device 1 is performed between the solder bonding process and the bonding and curing process of the microlens array.
  • the wiring process includes wire bonding for supplying power from the submount 20 to the semiconductor laser array 10 and ribbon bonding for supplying power from the lead material to the submount 20. Then, the laser light source device 1 and the external power source are electrically connected via the lead material.
  • the above structure may be hermetically sealed using a cap or a lid.
  • FIG. 9 is a process block diagram of the method for manufacturing the laser light source device 1.
  • 11 and 12 are diagrams for explaining the influence of the warp of the semiconductor laser array 101 on the optical characteristics in the laser light source device according to the base technology.
  • the semiconductor laser array 101 has a convex warp along the arrangement direction of the light emitting points with the light emitting point at the center as the apex.
  • the microlens array 102 disposed on the optical axis of the emitted light of the semiconductor laser array 101 has an optical working surface for making the fast axis direction parallel light on the incident side and makes the slow axis direction parallel light.
  • the optical action surface is provided on the exit side.
  • the warp causes a deviation between the optical axis 201 of the light emitting point at the center of the semiconductor laser array 101 and the optical axis 202 of the light emitting point at the end. Therefore, as shown in FIG. 12, there is a problem that when the light emitted from the semiconductor laser array 101 passes through the microlens array 102, the light beam at the end is largely deflected.
  • the laser light source device 1 includes a semiconductor laser array 10 having a plurality of light emitting points, and a microlens array 30 disposed on the optical axis of emitted light from the semiconductor laser array 10.
  • the semiconductor laser array 10 has a convex warp along the arrangement direction of the light emitting points, and the microlens array 30 is curved in the same direction as the warp of the semiconductor laser array 10.
  • the method of manufacturing the laser light source device 1 includes a semiconductor laser array 10 having a plurality of light emitting points, a submount 20 disposed on one of two main surfaces facing each other along the epitaxial growth direction of the semiconductor laser array 10,
  • the heat sink 41 disposed on the surface opposite to the surface on which the semiconductor laser array 10 is disposed in the submount 20, and the plate 42 disposed between the heat sink 41 and the submount 20, respectively, have a light emitting point in plan view.
  • the step (a) of arranging the semiconductor laser array 10, the submount 20, the heat sink 41, and the plate 42 is performed by performing a step (a) of arranging the semiconductor laser array 10 at a symmetrical position with respect to the center in the arrangement direction and one heating and pressurization using solder.
  • the optical axis of the light emitting point of the semiconductor laser array 10 and the optical axis of the microlens array 30 are coaxial, the deflection of the light beam can be suppressed. Thereby, the influence of the curvature of the semiconductor laser array 10 can be reduced.
  • the allowable range of the warp amount of the semiconductor laser array 10 is widened, it is possible to adopt a structure in which the residual stress of the semiconductor laser array 10 is kept low and a structure with low thermal resistance. Thereby, increase of residual stress and deterioration of thermal resistance can be suppressed. Therefore, the durability of the laser light source device 1 is improved.
  • the method of suppressing the warp of the semiconductor laser array by providing a convex portion at the end of the submount requires two submounts, which increases the manufacturing cost of the laser light source device. Since only one form is required, there is no such problem.
  • FIG. 10 is a graph showing the relationship between the amount of warpage of the semiconductor laser array 10 and the stress when the thickness of the heat sink 41 is changed.
  • SiC is used as the base material of the submount 20 and Cu is used as the material of the heat sink 41 and the plate 42.
  • the horizontal axis indicates the thickness of the heat sink 41 of the reference structure as 1, and the vertical axis indicates the warpage amount and the stress value in the reference structure as 1, respectively.
  • the warping amount is the absolute value of the difference between the central portion and the end portion of the semiconductor laser array 10
  • the stress is the absolute value of the stress at the lower surface of the semiconductor laser array 10. It is an analysis result under the condition that there is no change. From FIG. 10, it can be seen that increasing the thickness of the heat sink 41 reduces the amount of warping while increasing the stress.
  • the influence of the deterioration of the optical characteristics due to the warp of the semiconductor laser array 10 can be absorbed by the curvature of the microlens array 30, and the heat sink that has been conventionally limited by the warp is thin, It is possible to employ a structure with a small residual stress.
  • the heat sink 41 thinner, the distance from the semiconductor laser array 10 that is the heat source of the laser light source device 1 to the cooling surface of the heat sink 41 can be shortened, and the thermal resistance as the laser light source device 1 is reduced. Leads to.
  • the submount 20 is bonded to one of two main surfaces facing each other along the epitaxial growth direction of the semiconductor laser array 10, and is bonded to the surface of the submount 20 facing the surface to which the semiconductor laser array 10 is bonded.
  • the semiconductor laser array 10, the submount 20, and the heat sink 41 are respectively disposed at positions symmetrical with respect to the center in the arrangement direction of the light emitting points in plan view.
  • the shape of the corresponding microlens array 30 is also made symmetrical with respect to the center of the light emitting points in the arrangement direction. be able to.
  • the optical axis of each light emission point and the optical axis of each microlens of the optical action surface 31 can be stably made coaxial.
  • the height of the optical axis with the semiconductor laser array 10 can be adjusted when the microlens array 30 is directly bonded to the heat sink 41. That is, the height of the optical axis can be adjusted only by directly bonding the microlens array 30 to the heat sink 41. Therefore, the optical axis alignment of the microlens array 30 is facilitated.
  • the step is formed by the plate 42 disposed between the heat sink 41 and the submount 20, the height of the optical axis can be adjusted by adjusting the thickness of the plate 42.
  • the microlens array 30 is bonded to the heat sink 41 via the adhesive 51, the height of the optical axis can be adjusted only by directly bonding the microlens array 30 to the heat sink 41. Therefore, the optical axis alignment of the microlens array 30 is facilitated.
  • the semiconductor laser array 10, the submount 20, the heat sink 41, and the plate 42 are arranged symmetrically with respect to the center in the arrangement direction of the light emitting points in plan view, and soldered together. Therefore, the warpage of the semiconductor laser array 10 after the bonding can be stably made to be a left-right symmetrical curve shape with respect to the center in the arrangement direction of the light emitting points.
  • a pressurizing process is required one by one, and it becomes difficult to control the warped shape after bonding.
  • the thermal stress after soldering is not uniform with respect to the center of the light emitting point in the arrangement direction. It becomes asymmetrical with respect to the center in the arrangement direction.
  • the shape of the corresponding microlens array 30 is similarly the center of the light emitting point arrangement direction. Can be symmetrical.
  • the optical axis of each light emitting point and the optical axis of each microlens on the optical action surface 31 can be stably coaxial.
  • the plate 42 may have a structure integrated with the heat sink 41 in advance. For example, by providing a step corresponding to the thickness of the plate 42 to the heat sink 41 by cutting or pressing, the same effect as in the case of the embodiment can be obtained.
  • the semiconductor laser array 10 is not limited to the material or the oscillation wavelength described in the embodiment. That is, the same effect as in the case of the embodiment can be obtained even in a semiconductor laser array using InP, GaN, sapphire or the like as an initial growth substrate.
  • the semiconductor laser array 10 is not limited to the convex warp shape described in the embodiment. That is, a concave warpage shape may be used, and an effect equivalent to that of the embodiment can be obtained as long as the structure can stably generate the same warpage regardless of the amount of warpage.
  • the microlens array 30 is not limited to the arrangement of the optical action surfaces 31 and 32. That is, a microlens array having a shape in which the optical action surface 31 does not have a lens surface for incident light and the optical action surface 32 acts in the fast axis direction and the slow axis direction, or the optical action surface 31 is a fast axis. Even in the case of a microlens array having a shape that acts in the direction and the slow axis direction and the optical action surface 32 does not have a lens surface with respect to incident light, the same effect as in the case of the embodiment can be obtained.
  • 1 laser light source device 10 semiconductor laser array, 20 submount, 30 microlens array, 41 heat sink, 42 plate, 51 adhesive.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'objet de la présente invention est de mettre en œuvre, dans un dispositif de source de lumière laser utilisant un réseau de lasers semi-conducteurs, une technique grâce à laquelle il est possible de réduire l'influence du gauchissement du réseau de lasers semi-conducteurs et de supprimer l'accroissement de la contrainte résiduelle ainsi que la détérioration de la résistance thermique. Un dispositif de source de lumière laser (1) comprend un réseau de lasers semi-conducteurs (10) qui comporte une pluralité de points électroluminescents, et un réseau de microlentilles (30) agencé sur un axe optique de la lumière émise par le réseau de lasers semi-conducteurs (10). Le réseau de lasers semi-conducteurs (10) présente un gauchissement de forme concave ou convexe dans une direction d'agencement des points électroluminescents. Le réseau de microlentilles (30) est incurvé dans la même direction que le gauchissement du réseau de lasers semi-conducteurs (10).
PCT/JP2016/051450 2016-01-19 2016-01-19 Dispositif de source de lumière laser et son procédé de fabrication WO2017126035A1 (fr)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017139354A (ja) * 2016-02-04 2017-08-10 ウシオ電機株式会社 半導体レーザ光源装置及び半導体レーザ光源装置の製造方法
JP2021132150A (ja) * 2020-02-20 2021-09-09 三菱電機株式会社 光モジュール及び光モジュールの製造方法
JP2021132151A (ja) * 2020-02-20 2021-09-09 三菱電機株式会社 光モジュール及び光モジュールの製造方法
WO2023027096A1 (fr) * 2021-08-26 2023-03-02 三菱電機株式会社 Module optique et procédé de fabrication de module optique

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JP2021132150A (ja) * 2020-02-20 2021-09-09 三菱電機株式会社 光モジュール及び光モジュールの製造方法
JP2021132151A (ja) * 2020-02-20 2021-09-09 三菱電機株式会社 光モジュール及び光モジュールの製造方法
JP7426847B2 (ja) 2020-02-20 2024-02-02 三菱電機株式会社 光モジュール及び光モジュールの製造方法
WO2023027096A1 (fr) * 2021-08-26 2023-03-02 三菱電機株式会社 Module optique et procédé de fabrication de module optique

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