WO2017113470A1 - Ltps显示面板及其制备工艺 - Google Patents

Ltps显示面板及其制备工艺 Download PDF

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WO2017113470A1
WO2017113470A1 PCT/CN2016/072819 CN2016072819W WO2017113470A1 WO 2017113470 A1 WO2017113470 A1 WO 2017113470A1 CN 2016072819 W CN2016072819 W CN 2016072819W WO 2017113470 A1 WO2017113470 A1 WO 2017113470A1
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color filter
conductive ring
tft substrate
black matrix
display panel
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PCT/CN2016/072819
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English (en)
French (fr)
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熊彬
谢露露
韩云
邢振周
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武汉华星光电技术有限公司
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Priority to US14/914,243 priority Critical patent/US20180040607A1/en
Publication of WO2017113470A1 publication Critical patent/WO2017113470A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Definitions

  • the present invention relates to the field of LTPS display technologies, and in particular, to an LTPS display panel and a process for fabricating the same.
  • Low-temperature polysilicon fabrication processes enable display panels to have higher pixel density (PPI) and narrower bezels, all thanks to the higher electron mobility of low-temperature polysilicon.
  • the LTPS display panel generally includes a color filter (CF) 10, a black matrix 20 located at a middle position of the color filter, and a TFT substrate 30 opposite to the black matrix BM (Black Matrix) 20.
  • CF color filter
  • BM Black Matrix
  • an object of the present invention is to provide an LTPS display panel and a preparation process thereof.
  • An LTPS display panel comprising a color filter, a black matrix on the color filter, and a TFT substrate disposed on a side of the black matrix opposite to the color filter, outside the black matrix a conductive ring is disposed on the color filter, a dividing groove is disposed between the conductive ring and the black matrix, and one or more ground pins are disposed on the TFT substrate, and the conductive ring on the color filter The ground pin on the TFT substrate is electrically connected to form an ESD discharge path.
  • the conductive ring on the color filter and the ground pin on the TFT substrate are electrically connected by a conductive silver paste.
  • the conductive silver paste is disposed at a corner of the conductive ring, and a ground pin on the TFT substrate is disposed corresponding to a corner of the conductive ring.
  • the conductive ring is made of the same material as the black matrix.
  • the dividing groove has a width of 1 to 100 ⁇ m.
  • the conductive ring has a width of 100 to 1000 ⁇ m.
  • a preparation process of an LTPS display panel comprising:
  • TFT substrate Providing a TFT substrate, and one or more ground pins are disposed on the TFT substrate;
  • the conductive ring on the color filter and the ground pin on the TFT substrate are electrically connected to form an ESD discharge path.
  • the ground pin on the TFT substrate is disposed corresponding to the corner of the conductive ring.
  • the conductive ring on the color filter and the ground pin on the TFT substrate are electrically connected as follows:
  • a silver paste is applied between the conductive ring on the color filter and the ground pin on the TFT substrate, and the conductive ring and the ground pin are electrically connected.
  • the invention provides a black matrix and a conductive ring on the color filter, and forms a dividing groove between the black matrix and the conductive ring, and the conductive ring is electrically connected with the grounding pin on the TFT substrate to form an ESD discharge path, when the panel
  • ESD static electricity at the corner of the chipping hole, static electricity can be released to the earth through the ESD discharge path, thereby preventing the ESD display defect caused by the formation of the chipping gap of the cutting panel, and improving the ESD reliability of the panel.
  • FIG. 1 is a schematic diagram of a frame of a prior art LTPS display panel.
  • FIG. 2 is a schematic plan view showing the structure of a LTPS display panel in the prior art.
  • FIG. 3 is a schematic side view showing the structure of a LTPS display panel in the prior art.
  • FIG. 4 is a schematic plan view showing the structure of an LTPS display panel according to an embodiment of the present invention.
  • FIG. 5 is a schematic side view showing the structure of an LTPS display panel according to an embodiment of the present invention.
  • FIG. 6 is a schematic plan view showing discharge of an LTPS display panel according to an embodiment of the present invention.
  • FIG. 7 is a schematic side view showing discharge of an LTPS display panel according to an embodiment of the present invention.
  • the LTPS display panel includes a color filter 10 (CF), a black matrix 20 (BM) on the color filter, and
  • the TFT substrate 30 is disposed on one side of the black matrix and disposed opposite to the color filter, and a liquid crystal layer (not shown) is further included between the color filter and the TFT substrate.
  • a conductive ring 40 is disposed on the color filter outside the black matrix 20, a dividing groove 50 is disposed between the conductive ring 40 and the black matrix 20, and one or more ground pins 31 are disposed on the TFT substrate 30, and the color filter is disposed.
  • the conductive ring 40 on the light sheet is electrically connected to the ground pin 31 on the TFT substrate, and the conductive ring 40 forms a grounding conductive ring (GND loop) through the ground pin to finally form an ESD discharge path.
  • the conductive ring 40 on the color filter and the ground pin 31 on the TFT substrate are electrically connected by the conductive silver paste 60.
  • the conductive ring 40 has a rectangular shape.
  • the silver foil is respectively disposed at each corner 41 of the conductive ring 40, and the conductive ring at the corner 41 and the grounding pin 31 on the TFT substrate are electrically connected through the conductive silver paste 60, and the conductive ring 40 is passed through the conductive silver paste 60. Connected to the ground GND.
  • the electrostatic discharge charge ESD can flow through the silver dots at the four corners to the ground pin of the TFT substrate, and then through the ground lead.
  • the foot is released to the ground GND, thereby avoiding the problem that the ESD cannot be released and the panel display is poor due to the chipping gap generated by the cutting panel.
  • the dividing groove 50 is located between the conductive ring 40 and the black matrix 20, which can further block the ESD conduction accumulated by the chipping gap caused by the panel cutting to the black matrix of the color filter, so that the black matrix surface is not formed.
  • the electric field thereby avoiding the influence of the original parallel electric field between the TFT substrate and the color filter, causing the deflection angle of the liquid crystal molecules to be inconsistent with the actual design, thereby affecting the final display problem.
  • the conductive ring 40 is made of the same material as the black matrix 20, and the conductive ring 40 is formed by the original low-resistance black matrix BM.
  • the width of the dividing groove 50 is 1 to 100 ⁇ m, and the width of the conductive ring 40 is 100 to 1000 ⁇ m.
  • the width of the dividing groove 50 is about 15 ⁇ m, and the width of the conductive ring 40 is about 300 ⁇ m.
  • a rectangular conductive ring is taken as an example.
  • the conductive silver paste is disposed at a corner of the rectangular conductive ring.
  • the conductive ring may also be a closed-loop shape of other shapes, and the conductive silver paste. It may be disposed at the corner of all or part of the conductive ring, or at the non-corner of the conductive ring, which will not be described again by way of example.
  • the preparation process of the LTPS display panel in the above embodiment includes:
  • TFT substrate Providing a TFT substrate, and one or more ground pins are disposed on the TFT substrate;
  • the conductive ring on the color filter and the ground pin on the TFT substrate are electrically connected to form an ESD discharge path.
  • the electrical connection between the conductive ring on the color filter and the ground pin on the TFT substrate is specifically as follows:
  • a silver paste is applied between the conductive ring on the color filter and the ground pin on the TFT substrate, and the conductive ring and the ground pin are electrically connected.
  • the present invention provides a black matrix and a conductive ring on the color filter, and forms a dividing groove between the black matrix and the conductive ring, and the conductive ring is electrically connected to the ground pin on the TFT substrate.
  • the ESD discharge path is formed.

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Abstract

一种LTPS显示面板及其制备工艺，LTPS显示面板包括彩色滤光片（10）、位于彩色滤光片上的黑矩阵（20）、以及位于黑矩阵一侧且与彩色滤光片相对设置的TFT基板（30），黑矩阵外侧的彩色滤光片上设有导电环（40），导电环与黑矩阵之间设有分割槽（50），TFT基板上设有一个或多个接地引脚（31），彩色滤光片上的导电环和TFT基板上的接地引脚电性连接，以形成ESD放电路径。显示面板边缘形成的静电可通过ESD放电路径释放到大地，进而预防因切割面板形成的崩角缺口而造成的显示不良，提高了面板的可靠性。

Description

LTPS显示面板及其制备工艺 技术领域
本发明涉及LTPS显示技术领域，特别是涉及一种LTPS显示面板及其制备工艺。
背景技术
随着低温多晶硅(LTPS，Low Temperature Poly Silicon)设备和工艺技术不断改善，越来越多的面板厂商逐渐在低温多晶硅技术领域投入大量的精力和成本。低温多晶硅制造工艺能够使得显示面板具有更高的像素密度(PPI)和更窄的边框，这些都得益于低温多晶硅拥有较大的电子迁移率。
在终端显示市场，尤其是智能手机市场，各家公司都在需找产品差异化或者产品的创新点来借势宣传新款手机的卖点。目前，窄边框甚至“无边框”一直是终端品牌宣传的热点。终端客户的需求使得面板厂商不断的探索边框的极限，然而由于玻璃的特性以及面板的结构原因，使得边框的宽度几乎达到了物理极限。
现有技术中，参图1所示，在面板的四周分布着密集的电路，例如GOA(Gate On Array)单元电路、ESD(Electric Static Discharge)保护电路等，这些电路位于面板的最外围。结合图2、图3所示，LTPS显示面板通常包括彩色滤光片(CF)10、位于彩色滤光片中间位置的黑矩阵20、以及与黑矩阵BM(Black Matrix)20相对的TFT基板30，由于边框越来越窄，使得面板切割时很容易出现如图2所示的微细的裂纹、崩角缺口，这些裂纹的出现使得面板四周会出现尖端，进而使得ESD(Electric Static Discharge)更容易积累。由于窄边框的需要，使得面板的切割边缘离黑矩阵BM边缘非常近，切割面板时产生的微细的裂纹、崩角缺口就会很容易与黑矩阵BM连接，使得累计的ESD传导到黑矩阵BM，进而使得黑矩阵BM上带静电；当黑矩阵BM被带上静电时，会干扰原有正常的水平电场，进而造成面板显示不良。
发明内容
为克服现有技术的不足，本发明的目的在于提供一种LTPS显示面板及其制备工艺。
为了实现上述目的，本发明实施例提供的技术方案如下：
一种LTPS显示面板，所述LTPS显示面板包括彩色滤光片、位于彩色滤光片上的黑矩阵、以及位于黑矩阵一侧且与彩色滤光片相对设置的TFT基板，所述黑矩阵外侧的彩色滤光片上设有导电环，所述导电环与黑矩阵之间设有分割槽，所述TFT基板上设有一个或多个接地引脚，所述彩色滤光片上的导电环和TFT基板上的接地引脚电性连接，以形成ESD放电路径。
作为本发明的进一步改进，所述彩色滤光片上的导电环和TFT基板上的接地引脚通过导电银胶电性连接。
作为本发明的进一步改进，所述导电银胶设于导电环的拐角处，TFT基板上的接地引脚与导电环的拐角处对应设置。
作为本发明的进一步改进，所述导电环与黑矩阵的材质相同。
作为本发明的进一步改进，所述分割槽的宽度为1～100μm。
作为本发明的进一步改进，所述导电环的宽度为100～1000μm。
相应地，一种LTPS显示面板的制备工艺，所述制备工艺包括：
提供一彩色滤光片，在彩色滤光片的一侧形成黑矩阵以及位于黑矩阵外侧的导电环，黑矩阵和导电环通过分割槽分离设置；
提供一TFT基板，在TFT基板上设置一个或多个接地引脚；
将彩色滤光片上的导电环和TFT基板上的接地引脚电性连接，以形成ESD放电路径。
作为本发明的进一步改进，所述TFT基板上的接地引脚与导电环的拐角处对应设置。
作为本发明的进一步改进，将彩色滤光片上的导电环和TFT基板上的接地引脚电性连接具体为：
在彩色滤光片上的导电环和TFT基板上的接地引脚之间进行点银胶，电性连接导电环和接地引脚。
本发明通过在彩色滤光片上设置黑矩阵和导电环，并在黑矩阵和导电环之间形成分割槽，导电环与TFT基板上的接地引脚电性连接，形成ESD放电路径，当面板崩角缺口处有ESD静电时，静电可通过ESD放电路径释放到大地，进而可预防因切割面板形成崩角缺口而造成ESD显示不良，提高了面板的ESD可靠性。
附图说明
图1为现有技术中LTPS显示面板的框架示意图。
图2为现有技术中LTPS显示面板的平面结构示意图。
图3为现有技术中LTPS显示面板的侧面结构示意图。
图4为本发明一具体实施方式中LTPS显示面板的平面结构示意图。
图5为本发明一具体实施方式中LTPS显示面板的侧面结构示意图。
图6为本发明一具体实施方式中LTPS显示面板放电的平面示意图。
图7为本发明一具体实施方式中LTPS显示面板放电的侧面示意图。
具体实施方式
为了使本技术领域的人员更好地理解本发明中的技术方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。
参图4、图5所示为本发明一具体实施方式中的LTPS显示面板，该LTPS显示面板包括彩色滤光片10(CF)、位于彩色滤光片上的黑矩阵20(BM)、以及位于黑矩阵一侧且与彩色滤光片相对设置的TFT基板30，彩色滤光片和TFT基板之间还包括液晶层(未图示)。
其中，黑矩阵20外侧的彩色滤光片上设有导电环40，导电环40与黑矩阵20之间设有分割槽50，TFT基板30上设有一个或多个接地引脚31，彩色滤光片上的导电环40和TFT基板上的接地引脚31电性连接，进而导电环40通过接地引脚形成接地导电环(GND loop)，最终以形成ESD放电路径。
在本实施方式中，彩色滤光片上的导电环40和TFT基板上的接地引脚31通过导电银胶60电性连接，如在图4所示的LTPS显示面板中，导电环40呈矩形设置，在导电环40的各个拐角41处分别进行点银胶，通过导电银胶60电性连接拐角41处的导电环和TFT基板上的接地引脚31，通过导电银胶60将导电环40与大地GND接在一起。
如图6、图7所示，当崩角缺口处有静电放电电荷ESD时，静电放电电荷ESD可通过四个拐角处的银胶点流到TFT基板的接地引脚上，再通过该接地引脚释放到大地GND，进而避免了因切割面板产生的崩角缺口而造成ESD无法释放、面板显示不良的问题。
进一步地，分割槽50位于导电环40和黑矩阵20之间，可进一步阻绝因面板切割时造成的崩角缺口累计的ESD传导至彩色滤光片的黑矩阵上，使得黑矩阵表面不会形成电场，从而避免影响TFT基板和彩色滤光片之间原本的平行电场、导致液晶分子的偏转角度与实际设计不一致、从而影响最终显示的问题。
本实施方式中导电环40与黑矩阵20的材质相同，导电环40采用原有低阻黑矩阵BM形成，分割槽50的宽度为1～100μm，导电环40的宽度为100～1000μm。优选地，在本发明的一具体实施例中，分割槽50的宽度为15μm左右，而导电环40的宽度为300μm左右。
应当理解的是，本实施方式中以矩形的导电环为例进行说明，导电银胶设于矩形导电环的拐角处，在其他实施方式中导电环也可以为其他形状的闭环形，导电银胶可以设置于全部或部分导电环的拐角处，也可以设于导电环的非拐角处，此处不再一一举例进行说明。
相应地，上述实施方式中LTPS显示面板的制备工艺，包括：
提供一彩色滤光片，在彩色滤光片的一侧形成黑矩阵以及位于黑矩阵外侧的导电环，黑矩阵和导电环通过分割槽分离设置；
提供一TFT基板，在TFT基板上设置一个或多个接地引脚；
将彩色滤光片上的导电环和TFT基板上的接地引脚电性连接，以形成ESD放电路径。
其中，将彩色滤光片上的导电环和TFT基板上的接地引脚电性连接具体为：
在彩色滤光片上的导电环和TFT基板上的接地引脚之间进行点银胶，电性连接导电环和接地引脚。
由以上技术方案可以看出，本发明通过在彩色滤光片上设置黑矩阵和导电环，并在黑矩阵和导电环之间形成分割槽，导电环与TFT基板上的接地引脚电性连接，形成ESD放电路径，当面板崩角缺口处有ESD静电时，静电可通过ESD放电路径释放到大地，进而可预防因切割面板形成崩角缺口而造成ESD显示不良，提高了面板的ESD可靠性。
对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。
此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。

Claims (10)

  1. 一种LTPS显示面板，所述LTPS显示面板包括彩色滤光片、位于彩色滤光片上的黑矩阵、以及位于黑矩阵一侧且与彩色滤光片相对设置的TFT基板，其中，所述黑矩阵外侧的彩色滤光片上设有导电环，所述导电环与黑矩阵之间设有分割槽，所述TFT基板上设有一个或多个接地引脚，所述彩色滤光片上的导电环和TFT基板上的接地引脚电性连接，以形成ESD放电路径。
  2. 根据权利要求1所述的LTPS显示面板，其中，所述彩色滤光片上的导电环和TFT基板上的接地引脚通过导电银胶电性连接。
  3. 根据权利要求2所述的LTPS显示面板，其中，所述导电银胶设于导电环的拐角处，TFT基板上的接地引脚与导电环的拐角处对应设置。
  4. 根据权利要求1所述的LTPS显示面板，其中，所述导电环与黑矩阵的材质相同。
  5. 根据权利要求1所述的LTPS显示面板，其中，所述分割槽的宽度为1～100μm。
  6. 根据权利要求1所述的LTPS显示面板，其中，所述导电环的宽度为100～1000μm。
  7. 一种LTPS显示面板的制备工艺，其中，所述制备工艺包括：
    提供一彩色滤光片，在彩色滤光片的一侧形成黑矩阵以及位于黑矩阵外侧的导电环，黑矩阵和导电环通过分割槽分离设置；
    提供一TFT基板，在TFT基板上设置一个或多个接地引脚；
    将彩色滤光片上的导电环和TFT基板上的接地引脚电性连接，以形成ESD放电路径。
  8. 根据权利要求7所述的制备工艺，其中，所述TFT基板上的接地引脚与导电环的拐角处对应设置。
  9. 根据权利要求7所述的制备工艺，其中，将彩色滤光片上的导电环和TFT基板上的接地引脚电性连接具体为：
    在彩色滤光片上的导电环和TFT基板上的接地引脚之间进行点银胶，电性连接导电环和接地引脚。
  10. 根据权利要求8所述的制备工艺，其中，将彩色滤光片上的导电环和 TFT基板上的接地引脚电性连接具体为：
    在彩色滤光片上的导电环和TFT基板上的接地引脚之间进行点银胶，电性连接导电环和接地引脚。
PCT/CN2016/072819 2015-12-31 2016-01-29 Ltps显示面板及其制备工艺 WO2017113470A1 (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11249496B1 (en) 2020-09-07 2022-02-15 Copreci, S.Coop. Gas pressure regulator valve
CN114675447A (zh) * 2022-03-24 2022-06-28 北京京东方光电科技有限公司 一种显示基板及其制作方法和显示装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10921634B2 (en) * 2016-09-21 2021-02-16 Hefei Boe Optoelectronics Technology Co., Ltd. Display panel and display device
CN106773430B (zh) * 2017-03-30 2022-01-18 京东方科技集团股份有限公司 一种显示基板及显示装置
CN108873512B (zh) * 2018-06-06 2021-04-30 厦门天马微电子有限公司 显示面板和显示装置
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CN109061928B (zh) * 2018-10-30 2021-10-15 厦门天马微电子有限公司 显示面板和显示装置
CN112349747A (zh) * 2019-08-07 2021-02-09 北京小米移动软件有限公司 一种oled屏幕组件及其生产方法和电子设备
CN110706596B (zh) * 2019-10-21 2022-06-21 京东方科技集团股份有限公司 显示面板及显示装置
CN118033935B (zh) * 2024-04-01 2024-07-02 湖北欧雷玛科技有限公司 一种va类液晶显示器的电极制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1716015A (zh) * 2004-06-29 2006-01-04 Lg.菲利浦Lcd株式会社 防止像素区外的区域漏光的cot液晶显示器及其制造法
CN102243405A (zh) * 2010-05-13 2011-11-16 上海天马微电子有限公司 液晶显示面板及其制造方法
CN103855169A (zh) * 2012-11-28 2014-06-11 株式会社半导体能源研究所 显示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100778836B1 (ko) * 2000-12-30 2007-11-22 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
CN101393343B (zh) * 2007-09-21 2010-09-29 群康科技(深圳)有限公司 液晶面板
KR101033463B1 (ko) * 2008-06-13 2011-05-09 엘지디스플레이 주식회사 액정표시장치용 어레이 기판
TWI376544B (en) * 2008-06-16 2012-11-11 Wintek Corp Liquid crystal display panel

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1716015A (zh) * 2004-06-29 2006-01-04 Lg.菲利浦Lcd株式会社 防止像素区外的区域漏光的cot液晶显示器及其制造法
CN102243405A (zh) * 2010-05-13 2011-11-16 上海天马微电子有限公司 液晶显示面板及其制造方法
CN103855169A (zh) * 2012-11-28 2014-06-11 株式会社半导体能源研究所 显示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11249496B1 (en) 2020-09-07 2022-02-15 Copreci, S.Coop. Gas pressure regulator valve
CN114675447A (zh) * 2022-03-24 2022-06-28 北京京东方光电科技有限公司 一种显示基板及其制作方法和显示装置
CN114675447B (zh) * 2022-03-24 2023-06-23 北京京东方光电科技有限公司 一种显示基板及其制作方法和显示装置

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