WO2017110409A1 - Procédé d'inspection d'un élément semi-conducteur optique sur lequel est fixée une couche de luminophore - Google Patents

Procédé d'inspection d'un élément semi-conducteur optique sur lequel est fixée une couche de luminophore Download PDF

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Publication number
WO2017110409A1
WO2017110409A1 PCT/JP2016/085779 JP2016085779W WO2017110409A1 WO 2017110409 A1 WO2017110409 A1 WO 2017110409A1 JP 2016085779 W JP2016085779 W JP 2016085779W WO 2017110409 A1 WO2017110409 A1 WO 2017110409A1
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WO
WIPO (PCT)
Prior art keywords
optical semiconductor
phosphor layer
semiconductor element
sealing element
light
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Application number
PCT/JP2016/085779
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English (en)
Japanese (ja)
Inventor
近藤　隆
吉田　直子
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日東電工株式会社
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Filing date
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Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Publication of WO2017110409A1 publication Critical patent/WO2017110409A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Definitions

  • the present invention relates to an inspection method for an optical semiconductor element with a phosphor layer.
  • an optical semiconductor device such as a light emitting diode device is formed by forming a large number of optical semiconductor elements (LEDs) on a wafer, separating them, and then mounting them on a diode substrate for supplying power to the LEDs. Is obtained. And before mounting and singulation, an inspection probe is brought into contact with the LED, and an electrical inspection is performed (for example, refer to Patent Document 1).
  • LEDs optical semiconductor elements
  • the white light emitting device includes, for example, a diode substrate, a blue LED that is mounted thereon and emits blue light, and a phosphor layer that can convert blue light into yellow light and covers the LED (for example, Patent Documents). 2).
  • a white light emitting device emits high-energy white light by mixing the blue light emitted from the LED and transmitted through the phosphor layer and the yellow light in which part of the blue light is wavelength-converted in the phosphor layer. Emits light.
  • a light emission inspection is performed on an LED before mounting, that is, an LED with a phosphor layer including a blue LED and a phosphor layer.
  • an inspection probe is brought into contact with the electrode of the LED with a phosphor layer to cause the LED with the phosphor layer to emit light, the light is measured with a detector, and the chromaticity of the light and its variation are inspected. .
  • the former method has a problem that it takes a lot of time to move a large number of LEDs with phosphor layers individually.
  • the distance between a large number of phosphor layer-attached LEDs is widened, which causes a problem that a large amount of space is required.
  • An object of the present invention is to provide a method for inspecting an optical semiconductor element with a phosphor layer capable of inspecting an optical semiconductor element with a phosphor layer accurately, quickly and in a space-saving manner.
  • the present invention [1] is a method for inspecting an optical semiconductor element with a phosphor layer comprising an optical semiconductor element and a phosphor layer, and a plurality of the optical semiconductor elements with a phosphor layer are arranged at intervals in the plane direction.
  • a partition wall is disposed between the phosphor layer-attached optical semiconductor element, the light transmittance of the partition wall is 20% or less, and a length in an orthogonal direction perpendicular to the surface direction of the partition wall is the one fluorescent light.
  • the orthogonal length of the optical semiconductor element with body layer It includes an inspection method of a long fluorescent layer with optical semiconductor element also.
  • the partition wall is arranged between one optical semiconductor element with a phosphor layer and another optical semiconductor element with a phosphor layer arranged adjacent thereto.
  • the light transmittance of a partition is 20% or less, and the orthogonal direction length of a partition is longer than the orthogonal direction length of one optical semiconductor element with a phosphor layer. Therefore, light from one optical semiconductor element with a phosphor layer is suppressed from reaching another optical semiconductor element with a phosphor layer, and light from another optical semiconductor element with a phosphor layer is detected. Can be suppressed. Therefore, one optical semiconductor element with a phosphor layer can be detected with high accuracy.
  • the partition wall is arranged to inspect the single optical semiconductor element with the phosphor layer, it is not necessary to individually move the optical semiconductor element with the phosphor layer to the inspection region, and the inspection time can be shortened. it can. Furthermore, it is not necessary to increase the distance between the optical semiconductor elements with a phosphor layer, and the inspection can be performed in a small space.
  • light from one optical semiconductor element with a phosphor layer can be more reliably suppressed from reaching another optical semiconductor element with a phosphor layer. Therefore, the one optical semiconductor element with a phosphor layer can be detected with higher accuracy.
  • the present invention [3] provides the inspection method for an optical semiconductor element with a phosphor layer according to [1] or [2], wherein the partition wall is disposed so as to surround the one optical semiconductor element with a phosphor layer. Contains.
  • light from one optical semiconductor element with a phosphor layer can be arranged in any direction with respect to one optical semiconductor element with one phosphor layer.
  • it can suppress more reliably that it reaches
  • the element assembly includes a base material on which the phosphor layer-attached optical semiconductor element is disposed, and in the light emitting step, the one phosphor layer-attached optical semiconductor element and the other phosphor
  • the inspection method for an optical semiconductor element with a phosphor layer according to any one of [1] to [3], wherein the partition is arranged on one surface in the thickness direction of the base material between the optical semiconductor element with a layer. Contains.
  • the partition wall may be disposed on one surface of the base material of the element assembly, a precise jig and operation are not required, and an optical semiconductor element with a phosphor layer can be easily obtained. Can be detected.
  • the present invention [5] includes the method for inspecting an optical semiconductor element with a phosphor layer according to any one of [1] to [3], wherein the inspection probe includes the partition wall.
  • the inspection probe is provided with the partition wall in advance, the step of arranging the partition wall in the element assembly is not required. Therefore, the optical semiconductor element with a phosphor layer can be detected more quickly.
  • an optical semiconductor element with a phosphor layer can be inspected accurately, quickly, and in a space-saving manner.
  • FIG. 1A to 1B show an embodiment of a partition arrangement element assembly used in the inspection method of the present invention
  • FIG. 1A is a plan view
  • FIG. 1B is a cross-sectional view taken along line AA in FIG. 1A
  • 2A to 2E show a first embodiment of the inspection method of the present invention.
  • FIG. 2A is a step of preparing a substrate
  • FIG. 2B is a step of arranging a partition
  • FIG. 2C is a step of arranging a sealing element.
  • 2D shows a step of setting the element assembly in the inspection apparatus
  • FIG. 2E shows a step of emitting and detecting the sealing element.
  • 3A to 3D show a second embodiment of the inspection method of the present invention, in which FIG.
  • FIG. 3A is a step of preparing a substrate
  • FIG. 3B is a step of arranging a sealing element
  • FIG. 3C is an element assembly.
  • FIG. 3D shows a step of emitting and detecting the sealing element.
  • 4A to 4B show modified examples of the sealing element used in the inspection method of the present invention
  • FIG. 4A is a cross-sectional view of a form in which no electrode protrudes
  • FIG. 4B is a cross-sectional view of a form having a reflector. Indicates.
  • the vertical direction of the paper surface is the front-back direction (first direction)
  • the upper side of the paper surface is the front side (one side in the first direction)
  • the lower side of the paper surface is the rear side (the other side in the first direction).
  • the left and right direction on the paper surface is the left and right direction (second direction orthogonal to the first direction)
  • the left side on the paper surface is the left side (second side in the second direction)
  • the right side on the paper surface is the right side (the other side in the second direction).
  • the paper thickness direction is the vertical direction (the third direction orthogonal to the first direction and the second direction, the thickness direction), the front side of the paper is the upper side (one side in the third direction, the one side in the thickness direction), and the back side of the paper is the lower side (The other side in the third direction, the other side in the thickness direction). Specifically, it conforms to the direction arrow in each figure.
  • Embodiment of the inspection method of the sealing element 1 is equipped with a base material preparation process, a partition arrangement
  • a transparent base material 2 as an example of the base material is prepared.
  • the transparent substrate 2 supports and transports the plurality of sealing elements 1 until the inspection of the plurality of sealing elements 1 is performed.
  • the transparent substrate 2 has a substantially rectangular plate shape with a predetermined thickness in plan view, and a predetermined direction (surface direction, specifically, left-right direction) orthogonal to the thickness direction. And has a flat upper surface (one surface in the thickness direction) and a flat lower surface (the other surface in the thickness direction).
  • the transparent substrate 2 examples include polyester films such as polyethylene terephthalate (PET) films, polyolefin films such as polyethylene films and polypropylene films, such as polycarbonate films, polyvinyl chloride films, polystyrene films, acrylic films, and silicone resins. Examples thereof include resin films such as films and fluororesin films.
  • PET polyethylene terephthalate
  • polyolefin films such as polyethylene films and polypropylene films
  • polycarbonate films such as polycarbonate films, polyvinyl chloride films, polystyrene films, acrylic films, and silicone resins.
  • resin films such as films and fluororesin films.
  • An adhesive layer may be formed on the upper surface of the transparent substrate 2 in order to temporarily fix the sealing element 1.
  • the pressure-sensitive adhesive material forming the pressure-sensitive adhesive layer include pressure-sensitive adhesives such as acrylic pressure-sensitive adhesives and silicone-based pressure sensitive adhesives.
  • the adhesive layer may be, for example, an active energy ray irradiation release sheet whose adhesive strength is reduced by irradiation with active energy rays (specifically, an active energy ray irradiation release sheet described in JP-A-2005-286003). It can also be formed from.
  • Such a transparent substrate 2 may be a commercially available product such as an array tape or a dicing tape.
  • the thickness of the transparent substrate 2 is, for example, 40 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 1000 ⁇ m or less, preferably 800 ⁇ m or less.
  • a support member 19 is provided at the peripheral end of the transparent base material 2 to suppress deformation such as warping and bending of the transparent base material 2.
  • the support member 19 is made of metal, hard resin, or the like, and has a substantially frame shape in plan view (specifically, a ring shape, see the imaginary line in FIG. 1A).
  • the support member 19 is fixed to the upper surface of the transparent substrate 2 through an adhesive layer.
  • the shielding member 3 is arranged on the transparent base 2 as shown in FIG. 2B.
  • the shielding member 3 is formed in a lattice shape having a substantially rectangular shape in plan view, and integrally includes a frame portion 4 and a partition wall 5.
  • the frame portion 4 is formed in a substantially frame shape in plan view, extends in the front-rear direction, and has two first frame portions 4 a that are spaced apart in the left-right direction, and extends in the left-right direction, and the front end and the rear of the two first frame portions 4 a And two second frame portions 4b connecting the ends.
  • the width W1 (front-rear direction length or left-right direction length) of the frame part 4 is, for example, 1 mm or more, preferably 5 mm or more, and for example, 50 mm or less, preferably from the viewpoint of handleability. 10 mm or less.
  • the height (vertical length) of the frame part 4 is, for example, the same as the height H of the partition wall 5 to be described later.
  • the partition wall 5 includes a plurality (four) of first partition walls 5a and a plurality (four) of second partition walls 5b.
  • the plurality of first partition walls 5a are arranged between the two first frame portions 4a so as to be approximately equally divided in the left-right direction, extend in the front-rear direction, and are installed between the two second frame portions 4b.
  • the plurality of second partition walls 5b are arranged between the two second frame portions 4b so as to be substantially equally divided in the front-rear direction, extend in the left-right direction, and are installed between the two first frame portions 4a.
  • the first partition wall 5a and the second partition wall 5b divide the inside of the frame portion 4 into a grid pattern, thereby forming a plurality (25) of openings 6.
  • the plurality of openings 6 are aligned and arranged in the frame 4 so that there are 5 rows in the front-rear direction and 5 rows in the left-right direction.
  • the opening 6 has a substantially rectangular shape in plan view, more specifically, a substantially square shape in plan view.
  • a width W2 (length in the front-rear direction or length in the left-right direction) of the partition wall 5 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, more preferably 100 ⁇ m or more, and for example, 5 mm or less, preferably 3 mm or less.
  • the width W2 By setting the width W2 to be equal to or more than the above lower limit, the mechanical strength of the shielding member 3 can be increased and the light transmittance can be reduced.
  • the width W2 to be equal to or less than the above upper limit, the gap area other than the shielding member 3 and the sealing element 1 can be reduced, and the number of the sealing elements 1 arranged per unit area can be increased.
  • the height H (orthogonal direction length) of the partition wall 5 is longer than the height T of the sealing element 1 (described later), and exceeds 1.0 times the height T of the sealing element 1. Is 1.2 times or more, more preferably 1.5 times or more, still more preferably 2.0 times or more, and for example, 10 times or less.
  • the height H is, for example, 100 ⁇ m or more, preferably 400 ⁇ m or more, more preferably 600 ⁇ m or more, further preferably 850 ⁇ m or more, and for example, 30 mm or less, preferably 5 mm or less, More preferably, it is 3 mm or less.
  • the height H of the partition wall 5 is 1.2 times or more the height T of the sealing element 1, the light from one sealing element 1 reaches the other sealing element 1. It can suppress more reliably.
  • the probe needle 26 (described later) can be reliably brought into contact with the electrode 9.
  • the front-rear direction length or the left-right direction length of the opening 6 is, for example, 0.5 mm or more, preferably 1.5 mm or more, and for example, 10 mm or less, preferably 5 mm or less.
  • the light transmittance of the partition walls 5 is, for example, 20% or less, preferably 10% or less, more preferably in the width direction (direction connecting the sealing elements 1 adjacent to each other; the length in the front-rear direction or the length in the left-right direction). 5% or less. Thereby, it can suppress that the light of the sealing element 1 arrives at the other adjacent sealing element 1.
  • the light transmittance is obtained by measuring using a spectrophotometer under conditions of a wavelength region of 300 to 850 nm and a scanning speed of 1000 nm / min.
  • the material of the shielding member 3 is not limited as long as it is a material capable of shielding light, and examples thereof include a resin composition, metal, and wood. From the viewpoints of lightness, workability, adhesion to a transparent substrate, and the like, a resin composition is preferable.
  • Examples of the resin composition include a dye composition containing a resin and a dye.
  • the resin examples include a thermoplastic resin that is plasticized by heating, for example, a thermosetting resin that is cured by heating, for example, an active energy ray curable that is cured by irradiation with active energy rays (for example, ultraviolet rays, electron beams, etc.). Resin etc. are mentioned.
  • thermoplastic resin examples include vinyl acetate resin, ethylene / vinyl acetate copolymer (EVA), vinyl chloride resin, EVA / vinyl chloride resin copolymer, and the like.
  • curable resin such as a thermosetting resin and an active energy ray curable resin
  • examples of the curable resin include silicone resin, epoxy resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin.
  • thermosetting resins preferably thermosetting resins and active energy ray curable resins, more preferably thermosetting resins, and still more preferably silicone resins.
  • examples of the silicone resin include thermosetting silicone resin compositions such as a two-stage curable silicone resin composition and a one-stage curable silicone resin composition.
  • Examples of the two-step curable silicone resin composition include a condensation reaction / addition reaction curable silicone resin composition.
  • condensation reaction / addition reaction curable silicone resin compositions include first to eighth condensation / addition reaction curing described in JP2010-265436A, JP2013-187227A, and the like.
  • Type silicone resin composition for example, described in JP2013-091705A, JP2013-001815A, JP2013-001814A, JP2013-001813A, JP2012-102167A, etc.
  • a cage-type octasilsesquioxane-containing silicone resin composition for example, described in JP2013-091705A, JP2013-001815A, JP2013-001814A, JP2013-001813A, JP2012-102167A, etc.
  • a cage-type octasilsesquioxane-containing silicone resin composition for example, described in JP2013-091705A, JP2013-001815A
  • Examples of the one-step curable silicone resin composition include an addition reaction curable silicone resin composition.
  • the addition reaction curable silicone resin composition contains, for example, an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst.
  • addition reaction curable silicone resin compositions include phenyl silicone resin compositions described in JP-A-2015-73084, for example, ELASTOSIL series (manufactured by Asahi Kasei Wacker Silicone, Inc., specifically, , ELASTOSIL LR7665), KE series (manufactured by Shin-Etsu Silicone), and the like.
  • These resins can be used alone or in combination of two or more.
  • an epoxy resin, a silicone resin, and the like are preferable, and a silicone resin is more preferable.
  • the content ratio of the resin in the dye composition is, for example, 50% by mass or more, preferably 90% by mass or more, and for example, 99.8% by mass or less, preferably 97% by mass or less.
  • the dye may be, for example, a black dye, white dye, or colored dye (blue dye, yellow dye, brown pigment, red dye, etc.). From the viewpoint of ease, etc., black pigments and white pigments are preferable, and black pigments are more preferable.
  • black pigment examples include black pigments such as carbon black, graphite, copper oxide, manganese dioxide, titanium black, chromium oxide, and iron oxide.
  • These pigments can be used alone or in combination of two or more.
  • the content ratio of the pigment in the pigment composition is, for example, 0.2% by mass or more, preferably 3% by mass or more, and for example, 50% by mass or less, preferably 10% by mass or less.
  • additives described later can be added to the dye composition in an appropriate proportion.
  • the shielding member 3 is formed, for example, by forming a dye composition prepared by mixing a resin and a dye into a sheet (flat plate shape), and then using a cutting machine such as a cutting machine or a Thomason blade to form the opening 6. It can be manufactured by forming.
  • the shielding member 3 can also be produced by forming the opening 6 in the resin sheet and subsequently applying a paint containing a pigment to the resin sheet surface.
  • the shielding member 3 is arranged on the upper surface of the transparent base material 2 inside the support member 19 so as to be separated from the support member 19 by a predetermined distance. As a result, the plurality of transparent base materials 2 are exposed from the plurality of openings 6.
  • a plurality of sealing elements 1 are prepared, and then the plurality of sealing elements 1 are arranged on the transparent substrate 2 on which the shielding member 3 is arranged.
  • the sealing element 1 is formed in a substantially rectangular shape in plan view and side sectional view, and includes a light emitting surface 11, an electrode surface 12, and a side surface 13.
  • the light emitting surface 11 is the lower surface of the sealing element 1 and corresponds to the lower surface of the phosphor layer 8.
  • the light emitting surface 11 has a flat shape.
  • the electrode surface 12 is an upper surface of the sealing element 1 and is a surface on which an electrode 9 (described later) is formed.
  • the electrode surface 12 is disposed to face the light emitting surface 11 with an interval on the upper side.
  • the side surface 13 connects the peripheral edge of the light emitting surface 11 and the peripheral edge of the electrode surface 12.
  • the height T (length in the orthogonal direction) of the sealing element 1 is, for example, 10 ⁇ m or more, preferably 100 ⁇ m or more, and for example, 1000 ⁇ m or less, preferably 700 ⁇ m or less.
  • the height of the sealing element 1 is the length excluding the protruding electrode 9, that is, the vertical distance between the light emitting surface 11 and the electrode surface 12. Show.
  • the front-rear direction length or the left-right direction length L of the sealing element 1 is, for example, 0.1 mm or more, preferably 0.5 mm or more, and, for example, 5 mm or less, preferably 3 mm or less. .
  • the sealing element 1 includes an optical semiconductor element 7 and a phosphor layer 8 that covers the optical semiconductor element 7.
  • Examples of the optical semiconductor element 7 include a blue LED (light emitting diode element) that emits blue light.
  • a blue LED light emitting diode element
  • a plurality (two) of electrodes 9 are formed so as to slightly protrude upward from the electrode surface 12.
  • the phosphor layer 8 is formed so as to seal the optical semiconductor element 7. Specifically, it is formed in a substantially rectangular shape in plan view and a substantially rectangular shape in side view so as to cover the lower surface and the peripheral side surface of the optical semiconductor element 7 and expose the upper surface of the optical semiconductor element 7. Further, the lower surface of the phosphor layer 8 is in contact with the upper surface of the transparent substrate 2.
  • the phosphor layer 8 is formed from a phosphor composition.
  • the phosphor composition contains a phosphor and a resin.
  • the phosphor has a wavelength conversion function, and examples thereof include a yellow phosphor capable of converting blue light into yellow light, and a red phosphor capable of converting blue light into red light.
  • yellow phosphor examples include silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)), for example, Y 3 Al Garnet-type phosphors having a garnet-type crystal structure such as 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb 3 Al 3 O 12 : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca- ⁇ -SiAlON. Examples of the red phosphor include nitride phosphors such as CaAlSiN 3 : Eu and CaSiN 2 : Eu.
  • silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)
  • These phosphors can be used alone or in combination of two or more.
  • the phosphor content in the phosphor composition is, for example, 1% by mass or more, preferably 2% by mass or more, and for example, 75% by mass or less, preferably 60% by mass or less.
  • Resin is a transparent resin that disperses the phosphor and seals the optical semiconductor element 7.
  • transparent resins include the above-described thermoplastic resins, thermosetting resins, active energy ray curable resins, and the like.
  • curable resins such as thermosetting resins and active energy ray curable resins are used. More preferably, a thermosetting resin is mentioned, More preferably, a silicone resin is mentioned.
  • These transparent resins can be used alone or in combination of two or more.
  • the content ratio of the resin in the phosphor composition is, for example, 25% by mass or more, preferably 40% by mass or more, and for example, 99% by mass or less, preferably 98% by mass or less.
  • the phosphor composition includes organic fillers, inorganic fillers, anti-aging agents, modifiers, surfactants, dyes, pigments, anti-discoloring agents, ultraviolet absorbers, creep hardening inhibitors, plasticizers. Additives such as a thixotropic agent and an antifungal agent can be added at an appropriate ratio.
  • the height of the phosphor layer 8 (length in the vertical direction between the uppermost surface and the lowermost surface) (in FIG. 1B, the height T of the sealing element 1) is, for example, 10 ⁇ m or more, preferably 100 ⁇ m or more. For example, it is 1000 micrometers or less, Preferably, it is 700 micrometers or less.
  • L is, for example, 0.1 mm or more, preferably 0.5 mm or more, and for example, 5 mm or less, preferably 3 mm or less.
  • the sealing element 1 is, for example, a step of arranging a plurality of optical semiconductor elements 7 on the surface of the release sheet at intervals so that the electrode side surface (upper surface in FIG. 1B) contacts the surface of the release sheet, The step of laminating the phosphor layer 8 (phosphor composition) on the optical semiconductor element 7 and the release sheet so as to cover the light emitting side surface (the lower surface in FIG. 1B) and the side surfaces, and then the phosphor layer 8 and the release layer It is obtained by the process of cutting the sheet and separating the sealing element 1 into individual pieces.
  • the phosphor composition is a curable resin
  • the phosphor composition is laminated and then cured by applying heat or active energy as appropriate.
  • a plurality of sealing elements 1 are arranged on the upper surface of the transparent substrate 2. Specifically, the plurality of sealing elements 1 are arranged in the plurality of openings 6 of the shielding member 3 so that one sealing element 1 corresponds to one opening 6.
  • the sealing element 1 is disposed in the central region of the opening 6. That is, in one sealing element 1, the interval between the partition wall 5 positioned on the front side and the leading edge of the sealing element 1 (front side interval), and the partition wall 5 positioned on the rear side and the rear end edge of the sealing element 1 The sealing element 1 is arranged so that the interval (rear side interval) is equal. Similarly, the sealing element 1 is arranged so that the left interval and the right interval are equal.
  • the arrangement of the sealing element 1 includes, for example, a method of picking up using a conveying jig such as a collet.
  • an element assembly 16 including the transparent base material 2 and a plurality of sealing elements 1 arranged on the upper surface of the transparent base material 2 at intervals in the surface direction (front-rear direction and left-right direction) is obtained. Further, on the upper surface of the transparent substrate 2 of the element assembly 16, there is one sealing element 1, and the other sealing element 1 disposed adjacent to the one sealing element 1 in the front-rear direction or the left-right direction. Between them, the shielding member 3 is arranged so that the partition wall 5 is arranged.
  • An interval D (front interval, rear interval, left interval, right interval) between the sealing element 1 and the partition wall 5 is, for example, 10 ⁇ m or more, preferably 100 ⁇ m or more, and, for example, 5 mm or less, preferably Is 1 mm or less.
  • the distance D is equal to or less than the above upper limit, the gap area other than the partition wall 5 and the sealing element 1 can be reduced, and the number of sealing elements 1 arranged per unit area can be increased.
  • the distance D is equal to or more than the lower limit, the positional accuracy between the sealing element 1 and the partition wall 5 can be improved.
  • the distance between adjacent sealing elements 1 is, for example, 30 ⁇ m or more, preferably 250 ⁇ m or more, and for example, 15 mm or less, preferably 3 mm or less.
  • the sealing element 1 is caused to emit light individually, and in the detection process, light emitted individually is detected. That is, the light emission process and the detection process are performed simultaneously.
  • the partition arrangement element assembly 15 is set in the inspection region inside the inspection apparatus 20. That is, the element assembly 16 and the shielding member 3 disposed on the upper surface thereof are set in the inspection apparatus 20.
  • the inspection device 20 is provided with a fixing mechanism (not shown) that fixes the partition arrangement element assembly 15 to an inspection region in the middle of the light emitting unit 21 (described later) and the detection unit 22 (described later).
  • the partition arrangement element assembly 15 is fixed by a fixing mechanism.
  • the inspection apparatus 20 includes a light emitting unit 21 and a detection unit 22.
  • the light emitting unit 21 includes a test head 23 and an inspection probe 24.
  • the test head 23 supplies a voltage and a signal current necessary for the light emission inspection to the sealing element 1 through the inspection probe 24.
  • the inspection probe 24 includes a probe jig 25 and a plurality of (two) probe needles 26.
  • the probe jig 25 is provided on the lower surface of the test head 23.
  • the probe jig 25 supports the probe needle 26 and adjusts the angle and position of the probe needle 26.
  • the plurality of probe needles 26 are fixed to the probe jig 25 so that the distance between the probe needles 26 decreases downward so that the tips of the probe needles 26 can contact the electrode 9 of the sealing element 1.
  • the light emitting unit 21 is provided with a light emitting unit moving mechanism (not shown) capable of independently moving the light emitting unit 21 in the front-rear direction, the left-right direction, and the up-down direction.
  • a light emitting unit moving mechanism (not shown) capable of independently moving the light emitting unit 21 in the front-rear direction, the left-right direction, and the up-down direction.
  • the detection unit 22 detects light emitted from the sealing element 1 toward the lower side.
  • the detection unit 22 is disposed opposite to the lower side of the light emitting unit 21 with a space from the light emitting unit 21.
  • the detection unit 22 is formed in a substantially circular shape in a plan view in which a cross-sectional area in a plan view is increased upward.
  • the detection unit 22 is provided with a detection unit moving mechanism (not shown) that can move the detection unit 22 independently in the front-rear direction, the left-right direction, and the vertical direction.
  • the light emitting unit 21 is moved in the front-rear direction and the left-right direction by the light emitting unit moving mechanism, and is arranged above one (arbitrary) sealing element 1.
  • the detection unit 22 is moved in the front-rear direction and the left-right direction by the detection unit moving mechanism, and the detection unit 22 is arranged to face the light-emitting unit 21 with an interval in the vertical direction with one sealing element interposed therebetween. .
  • the detection unit 22 faces the lower side of the partition arrangement element assembly 15 with a space from the partition arrangement element assembly 15 so as to include the one sealing element 1 when projected in the vertical direction. Be placed.
  • the light emitting unit 21 is moved in the vertical direction by the light emitting unit moving mechanism, and the plurality of probe needles 26 are brought into contact with each of the electrodes 9 of one sealing element 1.
  • the signal current from the test head 23 reaches the electrode 9 through the probe needle 26, and the sealing element 1 emits light.
  • the detection part 22 detects the light (white light) from the sealing element 1, and measures the characteristic and property of the light. Specifically, for example, the chromaticity CIE of light is measured.
  • the light emission process and the detection process are repeated until the light emission inspection of all the sealing elements 1 arranged in the element assembly 16 is completed.
  • a correction process can be implemented with respect to the obtained chromaticity after completion
  • the correction value is adjusted with respect to the chromaticity of the sealing element 1 obtained as described above.
  • the correction value is, for example, (1) First, the plurality of sealing elements 1 are individually moved in different inspection areas, and the chromaticity (CIE) is inspected, and an average value of these chromaticities is obtained. (2) On the other hand, the inspection method of the present invention (for example, the first inspection) is performed on the element assembly 16 including the plurality of sealing elements 1, The average value of chromaticity is calculated, and then determined by calculating the difference between the reference value of (3) (1) and the average value of (2). The correction value obtained by the first inspection method should be used for the second and subsequent inspections of the inspection method of the present invention (that is, the element assembly 16 different from the first time). Can do.
  • CIE chromaticity
  • the probe needle 26 is brought into contact with one sealing element 1 to cause the one sealing element 1 to emit light, and the detection process detects light from the one sealing element 1. It has. Further, in the light emitting process, the light transmittance is 20% or less between one sealing element 1 and another sealing element 1 disposed adjacent thereto, and the height H is one sealing element. A partition wall 5 higher than a height T of 1 is disposed. For this reason, the light emission of one sealing element 1 can be accurately detected.
  • the partition wall 5 is disposed so as to surround one sealing element 1. For this reason, the light from one sealing element 1 reaches the other sealing element 1 even if the other sealing element 1 is arranged in any direction of front, rear, left and right with respect to one sealing element 1. Can be more reliably suppressed.
  • the shielding member 3 is disposed on the upper surface of the transparent substrate 2 between one sealing element 1 and another sealing element 1 in the light emitting process. For this reason, the sealing element 1 can be easily detected without requiring a precise jig or operation.
  • Second Embodiment A second embodiment of the method for inspecting the sealing element 1 according to the present invention will be described with reference to FIGS. 3A to 3D.
  • symbol is attached
  • 2nd Embodiment of the inspection method of the sealing element 1 is equipped with a base material preparation process, an element arrangement
  • a transparent substrate 2 is prepared as shown in FIG. 3A.
  • the base material preparation process of the second embodiment can be performed in the same manner as the base material preparation process of the first embodiment described above with reference to FIG. 2A.
  • a plurality of sealing elements 1 are prepared, and the plurality of sealing elements 1 are arranged on the transparent substrate 2.
  • the element placement step of the second embodiment can be performed in the same manner as the element placement step of the first embodiment described above with reference to FIG. 2C.
  • the partition arrangement step is not performed before the element arrangement step.
  • the sealing element 1 is caused to emit light individually.
  • the element assembly 16 is moved to the inspection area inside the inspection apparatus 20.
  • the light emitting unit 21 includes a test head 23 and an inspection probe 24, and the inspection probe 24 includes a probe jig 25, a plurality of probe needles 26, and a partition wall 5.
  • the partition wall 5 is provided on the lower surface of the probe jig 25.
  • the partition wall 5 is formed in a substantially frame shape (annular shape, rectangular frame shape, etc.) in plan view so as to be able to surround the periphery of one sealing element 1.
  • the height H of the partition wall 5 is higher than the height T of the sealing element 1, for example.
  • the height H of the partition wall 5 exceeds 1.0 times, preferably 1.2 times or more, and for example 10 times the height H of the sealing element 1. It is as follows. More specifically, the height H is, for example, 100 ⁇ m or more, preferably 400 ⁇ m or more, and for example, 10 mm or less, preferably 5 mm or less.
  • the height H By making the height H equal to or higher than the lower limit, when the probe needle 26 is brought into contact with the terminal, the lower end of the partition wall 5 can be brought into contact with the upper surface of the transparent substrate 2, and the light of the sealing element 1 is Reaching another adjacent sealing element 1 can be reliably suppressed. On the other hand, by setting the height H to the upper limit or less, the probe needle 26 can be reliably brought into contact with the electrode 9.
  • the inspection probe 24 is brought into contact with the sealing element 1.
  • the inspection probe 24 is moved in the front-rear direction, the left-right direction, and the up-down direction by the light emitting unit moving mechanism, and the plurality of probe needles 26 are brought into contact with each of the electrodes 9 of one sealing element 1.
  • the signal current from the test head 23 reaches the electrode 9 through the probe needle 26, and the sealing element 1 emits light.
  • the detection process of the second embodiment is performed in the same manner as the detection process of the first embodiment described above with reference to FIG. 2D.
  • the detection unit 22 captures the light (white light) from the sealing element 1 and measures the characteristics and properties of the light.
  • the light emission process and the detection process are repeated until the light emission inspection of all the sealing elements 1 arranged in the element assembly 16 is completed.
  • the correction process can be performed in the same manner as in the first embodiment.
  • the inspection probe 24 includes the partition wall 5.
  • the partition arrangement step can be omitted.
  • the plurality of sealing elements 1 can be detected more quickly.
  • the shielding member 3 is disposed on the upper surface of the transparent base material 2, and then the plurality of sealing elements 1 are disposed.
  • a plurality of sealing elements are disposed on the upper surface of the transparent base material 2.
  • the stop element 1 and subsequently arrange the shielding member 3. That is, the element assembly 16 can be prepared first, and then the shielding member 3 can be disposed on the upper surface of the element assembly 16.
  • the detection unit 22 is moved simultaneously with the movement of the light emission unit 21. For example, first, the light emission unit 21 is moved, and one sealing element 1 is moved. Then, the detector 22 can be moved in a state where the light is emitted.
  • the light emitting unit 21 and the detecting unit 22 are moved in the front / rear and left / right directions and arranged above or below the element assembly 16.
  • the element assembly 16 can also be moved in the front-rear and left-right directions and disposed in the middle of the light emitting unit 21 and the detection unit 22 in the vertical direction.
  • the transparent substrate 2 has a substantially rectangular shape in a plan view, but may be a substantially circular shape in a plan view, for example, although not shown.
  • the external shape of the shielding member 3 and the support member 19 is a substantially rectangular shape in plan view, for example, although not illustrated, it may be a substantially circular shape in plan view.
  • the shape of the opening 6 is a substantially rectangular shape in a plan view, but may be a substantially circular shape in a plan view, for example, although not shown.
  • the sealing elements 1 are aligned and arranged in a plurality of rows in the front-rear direction and the left-right direction, but the number of rows is not limited.
  • the elements 1 can also be arranged in a line in either the front-rear direction or the left-right direction.
  • the support member 19 is disposed on the peripheral edge of the transparent substrate 2, but the support member 19 may not be disposed. In the case where the support member 19 is not disposed, the hard transparent substrate 2 is preferably used as the transparent substrate 2.
  • the electrode 9 protrudes from the electrode surface 12, but the electrode 9 may not protrude from the electrode surface 12 as shown in FIG. 4A, for example. That is, the electrode surface 12 can be a flat plane.
  • the sealing element of FIG. 1B does not include the reflector 30, but the sealing element 1 may include the reflector 30 as shown in FIG. 4B, for example.
  • the sealing element 1 in FIG. 4B includes a reflector 30 so as to be in contact with and surround the side surface of the optical semiconductor element 7, and includes a phosphor layer 8 on the lower surface of the reflector 30 and the optical semiconductor element 7.
  • ⁇ Production of shielding member> 95 parts by mass of a silicone resin composition (LR7665, manufactured by Asahi Wacker Co., Ltd., addition reaction curable type) and 5 parts by mass of carbon black were mixed to prepare a dye composition (dye concentration of 5 wt%). The dye composition was applied to an applicator and dried at 100 ° C. for 10 minutes to obtain a shielding sheet having a thickness (height H) of 480 ⁇ m.
  • the light transmittance in the thickness direction when the shielding sheet was formed to a thickness of 50 ⁇ m was 1% or less.
  • the light transmittance was measured using a spectrophotometer (manufactured by JASCO Corporation, “UV-visible-near infrared spectrophotometer V670”) under the conditions of a wavelength region of 300 to 850 nm and a scanning speed of 1000 nm / min.
  • sealing element As the optical semiconductor element, an LED chip manufactured by Epistar (1.14 mm ⁇ 1.14 mm ⁇ height 150 ⁇ m) was used. Twenty-five sealing elements (1.64 mm ⁇ 1.64 mm ⁇ height T400 ⁇ m) were produced by sealing the light emitting side surface and side surfaces of this optical semiconductor element with a phosphor-containing silicone resin (see FIG. 1B). .
  • this sealing element was individually fixed to an array tape (described later), and an optical inspection was performed using a semiconductor test apparatus (described later). As a result, it was confirmed that the chromaticity (CIE, y) in the 25 sealing elements was 0.399 to 0.409, the average value was 0.404, and the range was 0.010.
  • an array tape (thickness 78 ⁇ m, “SPV”, manufactured by Nitto Denko Corporation) having an adhesive layer laminated on the upper surface was used.
  • a ring (corresponding to the support member 19) having a rectangular frame shape in plan view was fixed to the peripheral end portion of the upper surface of the transparent substrate, and the array tape was reinforced (see FIG. 2A).
  • a shielding member was disposed on the upper surface of the transparent substrate (see FIG. 2B).
  • a partition arrangement element assembly was set in an inspection region of a semiconductor test apparatus (chip prober (tape prober), “WPF”, manufactured by Optsystem Co., Ltd.) (see FIG. 2D). Subsequently, by moving the inspection probe and the detection unit of the light emitting unit with respect to each sealing element, the sealing element is caused to emit light, and the white light is detected, and the chromaticity of the light (CIE, y) was measured (see FIG. 2E).
  • Example 2 The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the thickness of the shielding sheet, that is, the height H of the shielding member (frame portion and partition wall) was 800 ⁇ m.
  • Example 3 The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the height H of the shielding member was 1000 ⁇ m.
  • Example 4 The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the partition wall width W2 was set to 200 ⁇ m.
  • the light transmittance of the shielding sheet having a thickness of 200 ⁇ m was 1% or less.
  • Example 5 The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the partition wall width W2 was set to 2 mm. In addition, the light transmittance of 2 mm thickness of the shielding sheet was 1% or less.
  • Example 6 The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the partition wall width W2 was 5 mm. In addition, the light transmittance of 5 mm thickness of the shielding sheet was 1% or less.
  • Example 7 A shielding sheet was obtained in the same manner as in Example 1 except that the mixing ratio of carbon black was changed and the pigment concentration was changed to 0.2 wt% to produce a shielding member.
  • the light transmittance of the shielding sheet having a thickness of 50 ⁇ m was 17%.
  • the chromaticity of the sealing element was measured in the same manner as in Example 1 except that this shielding member was used.
  • Comparative Example 1 The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the shielding member was not used and the distance between the sealing elements (front-rear direction distance and left-right direction distance) was 200 ⁇ m.
  • Comparative Example 2 The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the height H of the shielding member was 400 ⁇ m.
  • Comparative Example 3 The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the height H of the shielding member was 320 ⁇ m.
  • Comparative Example 4 A shielding sheet was obtained in the same manner as in Example 1 except that the blending ratio of carbon black was changed and the pigment concentration was changed to 0.1 wt% to produce a shielding member.
  • the light transmittance of 50 ⁇ m thickness of the shielding sheet was 23%.
  • the chromaticity of the sealing element was measured in the same manner as in Example 1 except that this shielding member was used.
  • Example 1 the above results were corrected. Specifically, first, as described above in ⁇ Preparation of sealing element>, the average value of the CIE and y values of 25 sealing elements measured individually was 0.404. The reference value was used. In Example 1, the CIE and y values of 25 sealing elements were 0.389 to 0.396, and the average value was 0.394. Therefore, the correction value is set to +0.010 from these differences. Next, this correction value was added to the CIE, y value before correction in Examples 1 to 7. The results are shown in Table 1.
  • the method for inspecting an optical semiconductor element with a phosphor layer of the present invention can be used for optical applications such as inspection of a white light semiconductor device, for example.

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Abstract

L'invention concerne un procédé d'inspection d'un élément semi-conducteur optique sur lequel est fixée une couche de luminophore et qui comporte un élément semi-conducteur optique et une couche de luminophore. La présente invention concerne donc un procédé comprenant : une étape d'émission de lumière permettant d'amener une sonde d'inspection en contact avec un élément semi-conducteur optique sur lequel est fixée une couche de luminophore et d'amener l'élément semi-conducteur optique sur lequel est fixé la couche de luminophore à émettre de la lumière, ledit élément semi-conducteur optique sur lequel est fixée la couche de luminophore faisant partie d'un ensemble d'éléments dans lequel de multiples éléments semi-conducteurs optiques sur lesquels est fixée une couche de luminophore sont disposés dans la direction de la surface en étant séparés les uns des autres ; et une étape de détection pour détecter la lumière émise par l'élément semi-conducteur optique sur lequel est fixée une couche de luminophore. Lors de l'étape d'émission de lumière, des parois de séparation sont disposées entre l'élément semi-conducteur optique sur lequel est fixée la couche de luminophore et d'autres éléments semi-conducteurs optiques sur lesquels est fixée une couche de luminophore et qui sont disposés de façon adjacente audit élément semi-conducteur optique sur lequel est fixée la couche de luminophore dans la direction de la surface. La transmission lumineuse des parois de séparation est égale ou inférieure à 20 %, et la longueur dans la direction orthogonale de chacune des parois de séparation, ladite longueur dans la direction orthogonale étant orthogonale à la longueur dans la direction de la surface, est supérieure à la longueur dans la direction orthogonale dudit élément semi-conducteur optique sur lequel est fixée la couche de luminophore.
PCT/JP2016/085779 2015-12-24 2016-12-01 Procédé d'inspection d'un élément semi-conducteur optique sur lequel est fixée une couche de luminophore WO2017110409A1 (fr)

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JP7346259B2 (ja) * 2019-11-18 2023-09-19 株式会社日本マイクロニクス 測定システム
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Citations (6)

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Publication number Priority date Publication date Assignee Title
JP2012013547A (ja) * 2010-06-30 2012-01-19 Panasonic Corp 全光量測定システム、全光量測定装置、全光量測定方法
WO2012073357A1 (fr) * 2010-12-01 2012-06-07 パイオニア株式会社 Module récepteur de lumière ainsi que dispositif d'inspection pour élément de génération de lumière semi-conducteur
JP2013096909A (ja) * 2011-11-02 2013-05-20 Micronics Japan Co Ltd プローブカード及び検査装置
WO2015036887A1 (fr) * 2013-09-13 2015-03-19 Koninklijke Philips N.V. Boîtier à grille de connexions pour del à puce retournée
JP2015125003A (ja) * 2013-12-25 2015-07-06 株式会社アイテックシステム 照明装置
JP2016130715A (ja) * 2015-01-15 2016-07-21 パイオニア株式会社 測定装置及び制御方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012013547A (ja) * 2010-06-30 2012-01-19 Panasonic Corp 全光量測定システム、全光量測定装置、全光量測定方法
WO2012073357A1 (fr) * 2010-12-01 2012-06-07 パイオニア株式会社 Module récepteur de lumière ainsi que dispositif d'inspection pour élément de génération de lumière semi-conducteur
JP2013096909A (ja) * 2011-11-02 2013-05-20 Micronics Japan Co Ltd プローブカード及び検査装置
WO2015036887A1 (fr) * 2013-09-13 2015-03-19 Koninklijke Philips N.V. Boîtier à grille de connexions pour del à puce retournée
JP2015125003A (ja) * 2013-12-25 2015-07-06 株式会社アイテックシステム 照明装置
JP2016130715A (ja) * 2015-01-15 2016-07-21 パイオニア株式会社 測定装置及び制御方法

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