WO2017110409A1

WO2017110409A1 - Method for inspecting phosphor layer-attached optical semiconductor element

Info

Publication number: WO2017110409A1
Application number: PCT/JP2016/085779
Authority: WO
Inventors: 近藤　隆; 吉田　直子
Original assignee: 日東電工株式会社
Priority date: 2015-12-24
Filing date: 2016-12-01
Publication date: 2017-06-29
Also published as: JP2017116372A

Abstract

Disclosed is a method for inspecting a phosphor layer-attached optical semiconductor element that is provided with an optical semiconductor element and a phosphor layer. The present invention is provided with: a light emitting step for bringing an inspection probe into contact with one phosphor layer-attached optical semiconductor element, and having the one phosphor layer-attached optical semiconductor element emit light, said one phosphor layer-attached optical semiconductor element being among an element assembly wherein a plurality of phosphor layer-attached optical semiconductor elements are disposed in the surface direction by being separated from each other; and a detection step for detecting light emitted from the one phosphor layer-attached optical semiconductor element. In the light emitting step, partition walls are disposed between the one phosphor layer-attached optical semiconductor element and other phosphor layer-attached optical semiconductor elements disposed adjacent to the one phosphor layer-attached optical semiconductor element in the surface direction, the light transmission rate of the partition walls is equal to or lower than 20 %, and the orthogonal direction length of each of the partition walls, said orthogonal direction length being orthogonal to the surface direction length, is longer than the orthogonal direction length of the one phosphor layer-attached optical semiconductor element.

Description

Inspection method of optical semiconductor element with phosphor layer

The present invention relates to an inspection method for an optical semiconductor element with a phosphor layer.

Conventionally, an optical semiconductor device such as a light emitting diode device is formed by forming a large number of optical semiconductor elements (LEDs) on a wafer, separating them, and then mounting them on a diode substrate for supplying power to the LEDs. Is obtained. And before mounting and singulation, an inspection probe is brought into contact with the LED, and an electrical inspection is performed (for example, refer to Patent Document 1).

In recent years, white light emitting devices such as ceiling lighting have been rapidly spreading. The white light emitting device includes, for example, a diode substrate, a blue LED that is mounted thereon and emits blue light, and a phosphor layer that can convert blue light into yellow light and covers the LED (for example, Patent Documents). 2). Such a white light emitting device emits high-energy white light by mixing the blue light emitted from the LED and transmitted through the phosphor layer and the yellow light in which part of the blue light is wavelength-converted in the phosphor layer. Emits light.

Japanese Patent Laid-Open No. 6-168991 Japanese Patent Laying-Open No. 2015-73084

Even in the case of inspecting such a white light emitting device, it is desired that a light emission inspection is performed on an LED before mounting, that is, an LED with a phosphor layer including a blue LED and a phosphor layer. Yes. Specifically, an inspection probe is brought into contact with the electrode of the LED with a phosphor layer to cause the LED with the phosphor layer to emit light, the light is measured with a detector, and the chromaticity of the light and its variation are inspected. .

In this case, in order to increase the efficiency of the inspection, it is considered to arrange a plurality of LEDs with phosphor layers on the transport substrate and to individually perform the light emission inspection in that state.

However, when the inspection is performed by individually emitting the LEDs with the phosphor layers in a state where the plurality of LEDs with the phosphor layers are gathered, it is detected on the yellow side from the assumed chromaticity, or each LED with the phosphor layers There arises a problem in which the variation between them is detected to be larger than the actual variation.

That is, according to such an inspection, when an LED with a phosphor layer to be inspected is caused to emit light, the phosphor layer of the LED with an adjacent phosphor layer is also excited to emit light, and the adjacent fluorescent light is emitted. Since the light of the LED with the body layer is also detected at the same time, the above-described problem occurs.

In order to eliminate this problem, a method for inspecting by moving one LED with a phosphor layer to be inspected to an inspection region different from the transport base material, between the LEDs with phosphor layers adjacent to each other Methods to increase the distance will be considered.

However, the former method has a problem that it takes a lot of time to move a large number of LEDs with phosphor layers individually. In the latter method, the distance between a large number of phosphor layer-attached LEDs is widened, which causes a problem that a large amount of space is required.

An object of the present invention is to provide a method for inspecting an optical semiconductor element with a phosphor layer capable of inspecting an optical semiconductor element with a phosphor layer accurately, quickly and in a space-saving manner.

The present invention [1] is a method for inspecting an optical semiconductor element with a phosphor layer comprising an optical semiconductor element and a phosphor layer, and a plurality of the optical semiconductor elements with a phosphor layer are arranged at intervals in the plane direction. A light emitting step of bringing an inspection probe into contact with the one optical semiconductor element with a phosphor layer to emit light from the one optical semiconductor element with the phosphor layer, and the one with the phosphor layer A detecting step of detecting light from the optical semiconductor element, and in the light emitting step, the optical semiconductor element with one phosphor layer, and the other optical semiconductor element with the phosphor layer are arranged adjacent to each other in a plane direction A partition wall is disposed between the phosphor layer-attached optical semiconductor element, the light transmittance of the partition wall is 20% or less, and a length in an orthogonal direction perpendicular to the surface direction of the partition wall is the one fluorescent light. The orthogonal length of the optical semiconductor element with body layer It includes an inspection method of a long fluorescent layer with optical semiconductor element also.

According to such an inspection method, in the light emitting process, the partition wall is arranged between one optical semiconductor element with a phosphor layer and another optical semiconductor element with a phosphor layer arranged adjacent thereto. Moreover, the light transmittance of a partition is 20% or less, and the orthogonal direction length of a partition is longer than the orthogonal direction length of one optical semiconductor element with a phosphor layer. Therefore, light from one optical semiconductor element with a phosphor layer is suppressed from reaching another optical semiconductor element with a phosphor layer, and light from another optical semiconductor element with a phosphor layer is detected. Can be suppressed. Therefore, one optical semiconductor element with a phosphor layer can be detected with high accuracy.

In addition, since the partition wall is arranged to inspect the single optical semiconductor element with the phosphor layer, it is not necessary to individually move the optical semiconductor element with the phosphor layer to the inspection region, and the inspection time can be shortened. it can. Furthermore, it is not necessary to increase the distance between the optical semiconductor elements with a phosphor layer, and the inspection can be performed in a small space.

The phosphor layer according to [1], wherein the perpendicular length of the partition wall is 1.2 times or more of the perpendicular direction length of the optical semiconductor element with the phosphor layer. An inspection method for an attached optical semiconductor element is included.

According to such an inspection method, light from one optical semiconductor element with a phosphor layer can be more reliably suppressed from reaching another optical semiconductor element with a phosphor layer. Therefore, the one optical semiconductor element with a phosphor layer can be detected with higher accuracy.

The present invention [3] provides the inspection method for an optical semiconductor element with a phosphor layer according to [1] or [2], wherein the partition wall is disposed so as to surround the one optical semiconductor element with a phosphor layer. Contains.

According to such an inspection method, light from one optical semiconductor element with a phosphor layer can be arranged in any direction with respect to one optical semiconductor element with one phosphor layer. However, it can suppress more reliably that it reaches | attains another optical semiconductor element with a fluorescent substance layer.

In the present invention [4], the element assembly includes a base material on which the phosphor layer-attached optical semiconductor element is disposed, and in the light emitting step, the one phosphor layer-attached optical semiconductor element and the other phosphor The inspection method for an optical semiconductor element with a phosphor layer according to any one of [1] to [3], wherein the partition is arranged on one surface in the thickness direction of the base material between the optical semiconductor element with a layer. Contains.

According to such an inspection method, since the partition wall may be disposed on one surface of the base material of the element assembly, a precise jig and operation are not required, and an optical semiconductor element with a phosphor layer can be easily obtained. Can be detected.

The present invention [5] includes the method for inspecting an optical semiconductor element with a phosphor layer according to any one of [1] to [3], wherein the inspection probe includes the partition wall.

According to such an inspection method, since the inspection probe is provided with the partition wall in advance, the step of arranging the partition wall in the element assembly is not required. Therefore, the optical semiconductor element with a phosphor layer can be detected more quickly.

According to the method for inspecting a semiconductor element of the present invention, an optical semiconductor element with a phosphor layer can be inspected accurately, quickly, and in a space-saving manner.

1A to 1B show an embodiment of a partition arrangement element assembly used in the inspection method of the present invention, FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along line AA in FIG. 1A. 2A to 2E show a first embodiment of the inspection method of the present invention. FIG. 2A is a step of preparing a substrate, FIG. 2B is a step of arranging a partition, and FIG. 2C is a step of arranging a sealing element. 2D shows a step of setting the element assembly in the inspection apparatus, and FIG. 2E shows a step of emitting and detecting the sealing element. 3A to 3D show a second embodiment of the inspection method of the present invention, in which FIG. 3A is a step of preparing a substrate, FIG. 3B is a step of arranging a sealing element, and FIG. 3C is an element assembly. FIG. 3D shows a step of emitting and detecting the sealing element. 4A to 4B show modified examples of the sealing element used in the inspection method of the present invention, FIG. 4A is a cross-sectional view of a form in which no electrode protrudes, and FIG. 4B is a cross-sectional view of a form having a reflector. Indicates.

<First Embodiment>
In FIG. 1A, the vertical direction of the paper surface is the front-back direction (first direction), the upper side of the paper surface is the front side (one side in the first direction), and the lower side of the paper surface is the rear side (the other side in the first direction). The left and right direction on the paper surface is the left and right direction (second direction orthogonal to the first direction), the left side on the paper surface is the left side (second side in the second direction), and the right side on the paper surface is the right side (the other side in the second direction). The paper thickness direction is the vertical direction (the third direction orthogonal to the first direction and the second direction, the thickness direction), the front side of the paper is the upper side (one side in the third direction, the one side in the thickness direction), and the back side of the paper is the lower side (The other side in the third direction, the other side in the thickness direction). Specifically, it conforms to the direction arrow in each figure.

1A to 2E, a first embodiment of a method for inspecting a phosphor layer-attached optical semiconductor element 1 (hereinafter also referred to as “sealing element”) in the present invention will be described.

1st Embodiment of the inspection method of the sealing element 1 is equipped with a base material preparation process, a partition arrangement | positioning process, an element arrangement | positioning process, a light emission process, and a detection process.

In the base material preparing step, as shown in FIG. 2A, a transparent base material 2 as an example of the base material is prepared.

The transparent substrate 2 supports and transports the plurality of sealing elements 1 until the inspection of the plurality of sealing elements 1 is performed. As shown in FIGS. 1A and 1B, the transparent substrate 2 has a substantially rectangular plate shape with a predetermined thickness in plan view, and a predetermined direction (surface direction, specifically, left-right direction) orthogonal to the thickness direction. And has a flat upper surface (one surface in the thickness direction) and a flat lower surface (the other surface in the thickness direction).

Examples of the transparent substrate 2 include polyester films such as polyethylene terephthalate (PET) films, polyolefin films such as polyethylene films and polypropylene films, such as polycarbonate films, polyvinyl chloride films, polystyrene films, acrylic films, and silicone resins. Examples thereof include resin films such as films and fluororesin films.

An adhesive layer may be formed on the upper surface of the transparent substrate 2 in order to temporarily fix the sealing element 1. Examples of the pressure-sensitive adhesive material forming the pressure-sensitive adhesive layer include pressure-sensitive adhesives such as acrylic pressure-sensitive adhesives and silicone-based pressure sensitive adhesives. In addition, the adhesive layer may be, for example, an active energy ray irradiation release sheet whose adhesive strength is reduced by irradiation with active energy rays (specifically, an active energy ray irradiation release sheet described in JP-A-2005-286003). It can also be formed from.

Such a transparent substrate 2 may be a commercially available product such as an array tape or a dicing tape.

The thickness of the transparent substrate 2 is, for example, 40 μm or more, preferably 50 μm or more, and, for example, 1000 μm or less, preferably 800 μm or less.

A support member 19 is provided at the peripheral end of the transparent base material 2 to suppress deformation such as warping and bending of the transparent base material 2. The support member 19 is made of metal, hard resin, or the like, and has a substantially frame shape in plan view (specifically, a ring shape, see the imaginary line in FIG. 1A). The support member 19 is fixed to the upper surface of the transparent substrate 2 through an adhesive layer.

In the partition arrangement step, the shielding member 3 is arranged on the transparent base 2 as shown in FIG. 2B.

The shielding member 3 is formed in a lattice shape having a substantially rectangular shape in plan view, and integrally includes a frame portion 4 and a partition wall 5.

The frame portion 4 is formed in a substantially frame shape in plan view, extends in the front-rear direction, and has two first frame portions 4 a that are spaced apart in the left-right direction, and extends in the left-right direction, and the front end and the rear of the two first frame portions 4 a And two second frame portions 4b connecting the ends.

The width W1 (front-rear direction length or left-right direction length) of the frame part 4 is, for example, 1 mm or more, preferably 5 mm or more, and for example, 50 mm or less, preferably from the viewpoint of handleability. 10 mm or less. The height (vertical length) of the frame part 4 is, for example, the same as the height H of the partition wall 5 to be described later.

The partition wall 5 includes a plurality (four) of first partition walls 5a and a plurality (four) of second partition walls 5b. The plurality of first partition walls 5a are arranged between the two first frame portions 4a so as to be approximately equally divided in the left-right direction, extend in the front-rear direction, and are installed between the two second frame portions 4b. Has been. The plurality of second partition walls 5b are arranged between the two second frame portions 4b so as to be substantially equally divided in the front-rear direction, extend in the left-right direction, and are installed between the two first frame portions 4a. Has been. The first partition wall 5a and the second partition wall 5b divide the inside of the frame portion 4 into a grid pattern, thereby forming a plurality (25) of openings 6. The plurality of openings 6 are aligned and arranged in the frame 4 so that there are 5 rows in the front-rear direction and 5 rows in the left-right direction. The opening 6 has a substantially rectangular shape in plan view, more specifically, a substantially square shape in plan view.

A width W2 (length in the front-rear direction or length in the left-right direction) of the partition wall 5 is, for example, 10 μm or more, preferably 50 μm or more, more preferably 100 μm or more, and for example, 5 mm or less, preferably 3 mm or less. By setting the width W2 to be equal to or more than the above lower limit, the mechanical strength of the shielding member 3 can be increased and the light transmittance can be reduced. On the other hand, by setting the width W2 to be equal to or less than the above upper limit, the gap area other than the shielding member 3 and the sealing element 1 can be reduced, and the number of the sealing elements 1 arranged per unit area can be increased.

The height H (orthogonal direction length) of the partition wall 5 is longer than the height T of the sealing element 1 (described later), and exceeds 1.0 times the height T of the sealing element 1. Is 1.2 times or more, more preferably 1.5 times or more, still more preferably 2.0 times or more, and for example, 10 times or less. Specifically, the height H is, for example, 100 μm or more, preferably 400 μm or more, more preferably 600 μm or more, further preferably 850 μm or more, and for example, 30 mm or less, preferably 5 mm or less, More preferably, it is 3 mm or less. By setting the height H to be equal to or higher than the above lower limit, the light of the sealing element 1 can be prevented from reaching another adjacent sealing element 1. In particular, when the height H of the partition wall 5 is 1.2 times or more the height T of the sealing element 1, the light from one sealing element 1 reaches the other sealing element 1. It can suppress more reliably. On the other hand, by setting the height H to the upper limit or less, the probe needle 26 (described later) can be reliably brought into contact with the electrode 9.

The front-rear direction length or the left-right direction length of the opening 6 is, for example, 0.5 mm or more, preferably 1.5 mm or more, and for example, 10 mm or less, preferably 5 mm or less.

The light transmittance of the partition walls 5 is, for example, 20% or less, preferably 10% or less, more preferably in the width direction (direction connecting the sealing elements 1 adjacent to each other; the length in the front-rear direction or the length in the left-right direction). 5% or less. Thereby, it can suppress that the light of the sealing element 1 arrives at the other adjacent sealing element 1. The light transmittance is obtained by measuring using a spectrophotometer under conditions of a wavelength region of 300 to 850 nm and a scanning speed of 1000 nm / min.

The material of the shielding member 3 is not limited as long as it is a material capable of shielding light, and examples thereof include a resin composition, metal, and wood. From the viewpoints of lightness, workability, adhesion to a transparent substrate, and the like, a resin composition is preferable.

Examples of the resin composition include a dye composition containing a resin and a dye.

Examples of the resin include a thermoplastic resin that is plasticized by heating, for example, a thermosetting resin that is cured by heating, for example, an active energy ray curable that is cured by irradiation with active energy rays (for example, ultraviolet rays, electron beams, etc.). Resin etc. are mentioned.

Examples of the thermoplastic resin include vinyl acetate resin, ethylene / vinyl acetate copolymer (EVA), vinyl chloride resin, EVA / vinyl chloride resin copolymer, and the like.

Examples of the curable resin such as a thermosetting resin and an active energy ray curable resin include silicone resin, epoxy resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin.

These resins are preferably curable resins such as thermosetting resins and active energy ray curable resins, more preferably thermosetting resins, and still more preferably silicone resins.

Further, examples of the silicone resin include thermosetting silicone resin compositions such as a two-stage curable silicone resin composition and a one-stage curable silicone resin composition.

Examples of the two-step curable silicone resin composition include a condensation reaction / addition reaction curable silicone resin composition. Examples of such condensation reaction / addition reaction curable silicone resin compositions include first to eighth condensation / addition reaction curing described in JP2010-265436A, JP2013-187227A, and the like. Type silicone resin composition, for example, described in JP2013-091705A, JP2013-001815A, JP2013-001814A, JP2013-001813A, JP2012-102167A, etc. And a cage-type octasilsesquioxane-containing silicone resin composition.

Examples of the one-step curable silicone resin composition include an addition reaction curable silicone resin composition.

The addition reaction curable silicone resin composition contains, for example, an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst. Examples of such addition reaction curable silicone resin compositions include phenyl silicone resin compositions described in JP-A-2015-73084, for example, ELASTOSIL series (manufactured by Asahi Kasei Wacker Silicone, Inc., specifically, , ELASTOSIL LR7665), KE series (manufactured by Shin-Etsu Silicone), and the like.

These resins can be used alone or in combination of two or more.

Preferably, from the viewpoints of handling and workability, an epoxy resin, a silicone resin, and the like are preferable, and a silicone resin is more preferable.

The content ratio of the resin in the dye composition is, for example, 50% by mass or more, preferably 90% by mass or more, and for example, 99.8% by mass or less, preferably 97% by mass or less.

The dye may be, for example, a black dye, white dye, or colored dye (blue dye, yellow dye, brown pigment, red dye, etc.). From the viewpoint of ease, etc., black pigments and white pigments are preferable, and black pigments are more preferable.

Examples of the black pigment include black pigments such as carbon black, graphite, copper oxide, manganese dioxide, titanium black, chromium oxide, and iron oxide.

These pigments can be used alone or in combination of two or more.

The content ratio of the pigment in the pigment composition is, for example, 0.2% by mass or more, preferably 3% by mass or more, and for example, 50% by mass or less, preferably 10% by mass or less.

In addition to the above components, other known additives (for example, additives described later) can be added to the dye composition in an appropriate proportion.

The shielding member 3 is formed, for example, by forming a dye composition prepared by mixing a resin and a dye into a sheet (flat plate shape), and then using a cutting machine such as a cutting machine or a Thomason blade to form the opening 6. It can be manufactured by forming. The shielding member 3 can also be produced by forming the opening 6 in the resin sheet and subsequently applying a paint containing a pigment to the resin sheet surface.

The shielding member 3 is arranged on the upper surface of the transparent base material 2 inside the support member 19 so as to be separated from the support member 19 by a predetermined distance. As a result, the plurality of transparent base materials 2 are exposed from the plurality of openings 6.

In the element arrangement step, as shown in FIG. 2C, a plurality of sealing elements 1 are prepared, and then the plurality of sealing elements 1 are arranged on the transparent substrate 2 on which the shielding member 3 is arranged.

First, a plurality of sealing elements 1 are prepared.

As shown in FIG. 1B, the sealing element 1 is formed in a substantially rectangular shape in plan view and side sectional view, and includes a light emitting surface 11, an electrode surface 12, and a side surface 13.

The light emitting surface 11 is the lower surface of the sealing element 1 and corresponds to the lower surface of the phosphor layer 8. The light emitting surface 11 has a flat shape.

The electrode surface 12 is an upper surface of the sealing element 1 and is a surface on which an electrode 9 (described later) is formed. The electrode surface 12 is disposed to face the light emitting surface 11 with an interval on the upper side.

The side surface 13 connects the peripheral edge of the light emitting surface 11 and the peripheral edge of the electrode surface 12.

The height T (length in the orthogonal direction) of the sealing element 1 is, for example, 10 μm or more, preferably 100 μm or more, and for example, 1000 μm or less, preferably 700 μm or less. When the electrode 9 protrudes from the electrode surface 12, the height of the sealing element 1 is the length excluding the protruding electrode 9, that is, the vertical distance between the light emitting surface 11 and the electrode surface 12. Show.

The front-rear direction length or the left-right direction length L of the sealing element 1 is, for example, 0.1 mm or more, preferably 0.5 mm or more, and, for example, 5 mm or less, preferably 3 mm or less. .

The sealing element 1 includes an optical semiconductor element 7 and a phosphor layer 8 that covers the optical semiconductor element 7.

Examples of the optical semiconductor element 7 include a blue LED (light emitting diode element) that emits blue light. On the upper surface of the optical semiconductor element 7, that is, on the electrode surface 12 of the sealing element 1, a plurality (two) of electrodes 9 are formed so as to slightly protrude upward from the electrode surface 12.

The phosphor layer 8 is formed so as to seal the optical semiconductor element 7. Specifically, it is formed in a substantially rectangular shape in plan view and a substantially rectangular shape in side view so as to cover the lower surface and the peripheral side surface of the optical semiconductor element 7 and expose the upper surface of the optical semiconductor element 7. Further, the lower surface of the phosphor layer 8 is in contact with the upper surface of the transparent substrate 2.

The phosphor layer 8 is formed from a phosphor composition. The phosphor composition contains a phosphor and a resin.

The phosphor has a wavelength conversion function, and examples thereof include a yellow phosphor capable of converting blue light into yellow light, and a red phosphor capable of converting blue light into red light.

Examples of the yellow phosphor include silicate phosphors such as (Ba, Sr, Ca) ₂ SiO ₄ ; Eu, (Sr, Ba) ₂ SiO ₄ : Eu (barium orthosilicate (BOS)), for example, Y ₃ Al Garnet-type phosphors having a garnet-type crystal structure such as ₅ O ₁₂ : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb ₃ Al ₃ O ₁₂ : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca-α-SiAlON. Examples of the red phosphor include nitride phosphors such as CaAlSiN ₃ : Eu and CaSiN ₂ : Eu.

These phosphors can be used alone or in combination of two or more.

The phosphor content in the phosphor composition is, for example, 1% by mass or more, preferably 2% by mass or more, and for example, 75% by mass or less, preferably 60% by mass or less.

Resin is a transparent resin that disperses the phosphor and seals the optical semiconductor element 7. Examples of such transparent resins include the above-described thermoplastic resins, thermosetting resins, active energy ray curable resins, and the like. Preferably, curable resins such as thermosetting resins and active energy ray curable resins are used. More preferably, a thermosetting resin is mentioned, More preferably, a silicone resin is mentioned.

These transparent resins can be used alone or in combination of two or more.

The content ratio of the resin in the phosphor composition is, for example, 25% by mass or more, preferably 40% by mass or more, and for example, 99% by mass or less, preferably 98% by mass or less.

In addition to the above components, the phosphor composition includes organic fillers, inorganic fillers, anti-aging agents, modifiers, surfactants, dyes, pigments, anti-discoloring agents, ultraviolet absorbers, creep hardening inhibitors, plasticizers. Additives such as a thixotropic agent and an antifungal agent can be added at an appropriate ratio. The height of the phosphor layer 8 (length in the vertical direction between the uppermost surface and the lowermost surface) (in FIG. 1B, the height T of the sealing element 1) is, for example, 10 μm or more, preferably 100 μm or more. For example, it is 1000 micrometers or less, Preferably, it is 700 micrometers or less. The length in the front-rear direction and the length in the left-right direction of the phosphor layer 8 (particularly the length on the lower surface (light emitting surface 11) of the phosphor layer 8, in FIG. 1B, the length in the front-rear direction and the length in the left-right direction of the sealing element 1). L) is, for example, 0.1 mm or more, preferably 0.5 mm or more, and for example, 5 mm or less, preferably 3 mm or less.

The sealing element 1 is, for example, a step of arranging a plurality of optical semiconductor elements 7 on the surface of the release sheet at intervals so that the electrode side surface (upper surface in FIG. 1B) contacts the surface of the release sheet, The step of laminating the phosphor layer 8 (phosphor composition) on the optical semiconductor element 7 and the release sheet so as to cover the light emitting side surface (the lower surface in FIG. 1B) and the side surfaces, and then the phosphor layer 8 and the release layer It is obtained by the process of cutting the sheet and separating the sealing element 1 into individual pieces. When the phosphor composition is a curable resin, the phosphor composition is laminated and then cured by applying heat or active energy as appropriate.

Subsequently, a plurality of sealing elements 1 are arranged on the upper surface of the transparent substrate 2. Specifically, the plurality of sealing elements 1 are arranged in the plurality of openings 6 of the shielding member 3 so that one sealing element 1 corresponds to one opening 6.

Further, the sealing element 1 is disposed in the central region of the opening 6. That is, in one sealing element 1, the interval between the partition wall 5 positioned on the front side and the leading edge of the sealing element 1 (front side interval), and the partition wall 5 positioned on the rear side and the rear end edge of the sealing element 1 The sealing element 1 is arranged so that the interval (rear side interval) is equal. Similarly, the sealing element 1 is arranged so that the left interval and the right interval are equal.

The arrangement of the sealing element 1 includes, for example, a method of picking up using a conveying jig such as a collet.

Thereby, the partition provided with the transparent base material 2, the shielding member 3 arrange | positioned on the upper surface of the transparent base material 2, and the some sealing element 1 provided in the opening part 6 on the upper surface of the transparent base material 2. A placement element assembly 15 is obtained.

That is, an element assembly 16 including the transparent base material 2 and a plurality of sealing elements 1 arranged on the upper surface of the transparent base material 2 at intervals in the surface direction (front-rear direction and left-right direction) is obtained. Further, on the upper surface of the transparent substrate 2 of the element assembly 16, there is one sealing element 1, and the other sealing element 1 disposed adjacent to the one sealing element 1 in the front-rear direction or the left-right direction. Between them, the shielding member 3 is arranged so that the partition wall 5 is arranged.

An interval D (front interval, rear interval, left interval, right interval) between the sealing element 1 and the partition wall 5 is, for example, 10 μm or more, preferably 100 μm or more, and, for example, 5 mm or less, preferably Is 1 mm or less. By setting the distance D to be equal to or less than the above upper limit, the gap area other than the partition wall 5 and the sealing element 1 can be reduced, and the number of sealing elements 1 arranged per unit area can be increased. On the other hand, when the distance D is equal to or more than the lower limit, the positional accuracy between the sealing element 1 and the partition wall 5 can be improved.

The distance between adjacent sealing elements 1 (front-rear direction distance or left-right direction distance) is, for example, 30 μm or more, preferably 250 μm or more, and for example, 15 mm or less, preferably 3 mm or less.

In the light emission process, the sealing element 1 is caused to emit light individually, and in the detection process, light emitted individually is detected. That is, the light emission process and the detection process are performed simultaneously.

In the light emission process and the detection process, as shown in FIG. 2D, first, the partition arrangement element assembly 15 is set in the inspection region inside the inspection apparatus 20. That is, the element assembly 16 and the shielding member 3 disposed on the upper surface thereof are set in the inspection apparatus 20. Specifically, the inspection device 20 is provided with a fixing mechanism (not shown) that fixes the partition arrangement element assembly 15 to an inspection region in the middle of the light emitting unit 21 (described later) and the detection unit 22 (described later). The partition arrangement element assembly 15 is fixed by a fixing mechanism.

The inspection apparatus 20 includes a light emitting unit 21 and a detection unit 22.

The light emitting unit 21 includes a test head 23 and an inspection probe 24.

The test head 23 supplies a voltage and a signal current necessary for the light emission inspection to the sealing element 1 through the inspection probe 24.

The inspection probe 24 includes a probe jig 25 and a plurality of (two) probe needles 26.

The probe jig 25 is provided on the lower surface of the test head 23. The probe jig 25 supports the probe needle 26 and adjusts the angle and position of the probe needle 26.

The plurality of probe needles 26 are fixed to the probe jig 25 so that the distance between the probe needles 26 decreases downward so that the tips of the probe needles 26 can contact the electrode 9 of the sealing element 1.

Further, the light emitting unit 21 is provided with a light emitting unit moving mechanism (not shown) capable of independently moving the light emitting unit 21 in the front-rear direction, the left-right direction, and the up-down direction.

The detection unit 22 detects light emitted from the sealing element 1 toward the lower side. The detection unit 22 is disposed opposite to the lower side of the light emitting unit 21 with a space from the light emitting unit 21. The detection unit 22 is formed in a substantially circular shape in a plan view in which a cross-sectional area in a plan view is increased upward.

The detection unit 22 is provided with a detection unit moving mechanism (not shown) that can move the detection unit 22 independently in the front-rear direction, the left-right direction, and the vertical direction.

Next, the light emitting unit 21 is moved in the front-rear direction and the left-right direction by the light emitting unit moving mechanism, and is arranged above one (arbitrary) sealing element 1. At the same time, the detection unit 22 is moved in the front-rear direction and the left-right direction by the detection unit moving mechanism, and the detection unit 22 is arranged to face the light-emitting unit 21 with an interval in the vertical direction with one sealing element interposed therebetween. . Thereby, the detection unit 22 faces the lower side of the partition arrangement element assembly 15 with a space from the partition arrangement element assembly 15 so as to include the one sealing element 1 when projected in the vertical direction. Be placed.

Thereafter, as shown in FIG. 2E, the light emitting unit 21 is moved in the vertical direction by the light emitting unit moving mechanism, and the plurality of probe needles 26 are brought into contact with each of the electrodes 9 of one sealing element 1.

Thereby, the signal current from the test head 23 reaches the electrode 9 through the probe needle 26, and the sealing element 1 emits light.

At this time, of the light emitted from one sealing element 1, the light traveling toward the adjacent sealing element 1 is blocked by the partition wall 5 from reaching the adjacent sealing element 1.

And the detection part 22 detects the light (white light) from the sealing element 1, and measures the characteristic and property of the light. Specifically, for example, the chromaticity CIE of light is measured.

The light emission process and the detection process are repeated until the light emission inspection of all the sealing elements 1 arranged in the element assembly 16 is completed.

In addition, a correction process can be implemented with respect to the obtained chromaticity after completion | finish of a detection process.

In the correction process, the correction value is adjusted with respect to the chromaticity of the sealing element 1 obtained as described above.

The correction value is, for example, (1) First, the plurality of sealing elements 1 are individually moved in different inspection areas, and the chromaticity (CIE) is inspected, and an average value of these chromaticities is obtained. (2) On the other hand, the inspection method of the present invention (for example, the first inspection) is performed on the element assembly 16 including the plurality of sealing elements 1, The average value of chromaticity is calculated, and then determined by calculating the difference between the reference value of (3) (1) and the average value of (2). The correction value obtained by the first inspection method should be used for the second and subsequent inspections of the inspection method of the present invention (that is, the element assembly 16 different from the first time). Can do.

This makes it possible to calculate a more accurate chromaticity and to perform a light emission inspection with higher accuracy.

<Effect>
In this inspection method, the probe needle 26 is brought into contact with one sealing element 1 to cause the one sealing element 1 to emit light, and the detection process detects light from the one sealing element 1. It has. Further, in the light emitting process, the light transmittance is 20% or less between one sealing element 1 and another sealing element 1 disposed adjacent thereto, and the height H is one sealing element. A partition wall 5 higher than a height T of 1 is disposed. For this reason, the light emission of one sealing element 1 can be accurately detected.

On the other hand, when a plurality of sealing elements 1 are arranged on the transparent base material 2 without arranging the partition walls 5 and the light emission inspection is performed individually in that state, the yellow side of the assumed chromaticity is displayed. There arises a problem that it is detected or a large variation between the sealing elements 1 is detected. This defect is that when the sealing element 1 to be inspected is caused to emit light, the phosphor layer 8 of the adjacent sealing element 1 is also excited to emit light, and the light of the adjacent sealing element 1 is also emitted. This is due to the simultaneous detection.

However, in this inspection method, since the specific partition wall 5 is disposed between one sealing element 1 and another adjacent sealing element 1 in the light emitting step, the one sealing element 1 From the other sealing elements 1 can be suppressed, and therefore detection of light from the other sealing elements 1 can be suppressed. As a result, one sealing element 1 can be detected with high accuracy.

Further, in this inspection method, since the partition wall 5 is arranged and the inspection of one sealing element 1 is performed, it is not necessary to move the sealing elements 1 one by one to another inspection region, and the inspection time is reduced. It can be shortened. Furthermore, it is not necessary to increase the distance between the sealing elements 1, and the inspection can be performed in a space-saving manner.

Further, in this inspection method, the partition wall 5 is disposed so as to surround one sealing element 1. For this reason, the light from one sealing element 1 reaches the other sealing element 1 even if the other sealing element 1 is arranged in any direction of front, rear, left and right with respect to one sealing element 1. Can be more reliably suppressed.

In this inspection method, the shielding member 3 is disposed on the upper surface of the transparent substrate 2 between one sealing element 1 and another sealing element 1 in the light emitting process. For this reason, the sealing element 1 can be easily detected without requiring a precise jig or operation.

Second Embodiment
A second embodiment of the method for inspecting the sealing element 1 according to the present invention will be described with reference to FIGS. 3A to 3D. In addition, in each subsequent figure, the same code | symbol is attached | subjected to the member similar to the above, and the description is abbreviate | omitted.

2nd Embodiment of the inspection method of the sealing element 1 is equipped with a base material preparation process, an element arrangement | positioning process, a light emission process, and a detection process.

In the substrate preparation step, a transparent substrate 2 is prepared as shown in FIG. 3A. Specifically, the base material preparation process of the second embodiment can be performed in the same manner as the base material preparation process of the first embodiment described above with reference to FIG. 2A.

In the element arrangement step, as shown in FIG. 3B, a plurality of sealing elements 1 are prepared, and the plurality of sealing elements 1 are arranged on the transparent substrate 2.

Specifically, the element placement step of the second embodiment can be performed in the same manner as the element placement step of the first embodiment described above with reference to FIG. 2C.

In the second embodiment, the partition arrangement step is not performed before the element arrangement step. Thereby, the element aggregate | assembly 16 provided with the transparent base material 2 and the some sealing element 1 arrange | positioned on the upper surface of the transparent base material 2 is obtained.

In the light emitting process, the sealing element 1 is caused to emit light individually.

In the light emission process, first, the element assembly 16 is moved to the inspection area inside the inspection apparatus 20.

The light emitting unit 21 includes a test head 23 and an inspection probe 24, and the inspection probe 24 includes a probe jig 25, a plurality of probe needles 26, and a partition wall 5.

The partition wall 5 is provided on the lower surface of the probe jig 25. The partition wall 5 is formed in a substantially frame shape (annular shape, rectangular frame shape, etc.) in plan view so as to be able to surround the periphery of one sealing element 1. The height H of the partition wall 5 is higher than the height T of the sealing element 1, for example. Specifically, the height H of the partition wall 5 exceeds 1.0 times, preferably 1.2 times or more, and for example 10 times the height H of the sealing element 1. It is as follows. More specifically, the height H is, for example, 100 μm or more, preferably 400 μm or more, and for example, 10 mm or less, preferably 5 mm or less. By making the height H equal to or higher than the lower limit, when the probe needle 26 is brought into contact with the terminal, the lower end of the partition wall 5 can be brought into contact with the upper surface of the transparent substrate 2, and the light of the sealing element 1 is Reaching another adjacent sealing element 1 can be reliably suppressed. On the other hand, by setting the height H to the upper limit or less, the probe needle 26 can be reliably brought into contact with the electrode 9.

Subsequently, the inspection probe 24 is brought into contact with the sealing element 1.

Specifically, the inspection probe 24 is moved in the front-rear direction, the left-right direction, and the up-down direction by the light emitting unit moving mechanism, and the plurality of probe needles 26 are brought into contact with each of the electrodes 9 of one sealing element 1.

At this time, the lower end of the partition wall 5 is brought into contact with the upper surface of the transparent substrate 2. Thereby, it can suppress reliably that the light of the sealing element 1 arrives at the other adjacent sealing element 1.

In the detection process, light from one sealing element 1 is detected.

Specifically, the detection process of the second embodiment is performed in the same manner as the detection process of the first embodiment described above with reference to FIG. 2D.

Thereby, the detection unit 22 captures the light (white light) from the sealing element 1 and measures the characteristics and properties of the light.

Further, after the detection process, the correction process can be performed in the same manner as in the first embodiment.

And also in the test | inspection method of 2nd Embodiment, there exists an effect similar to 1st Embodiment. In particular, in the inspection method of the second embodiment, the inspection probe 24 includes the partition wall 5. For this reason, the partition arrangement step can be omitted. As a result, the plurality of sealing elements 1 can be detected more quickly.

<Modification>
In the first embodiment, the shielding member 3 is disposed on the upper surface of the transparent base material 2, and then the plurality of sealing elements 1 are disposed. For example, a plurality of sealing elements are disposed on the upper surface of the transparent base material 2. It is also possible to arrange the stop element 1 and subsequently arrange the shielding member 3. That is, the element assembly 16 can be prepared first, and then the shielding member 3 can be disposed on the upper surface of the element assembly 16.

In the light emission and detection process of the first embodiment and the second embodiment, the detection unit 22 is moved simultaneously with the movement of the light emission unit 21. For example, first, the light emission unit 21 is moved, and one sealing element 1 is moved. Then, the detector 22 can be moved in a state where the light is emitted.

In the first embodiment and the second embodiment, in the light emitting step and the detecting step, the light emitting unit 21 and the detecting unit 22 are moved in the front / rear and left / right directions and arranged above or below the element assembly 16. The element assembly 16 can also be moved in the front-rear and left-right directions and disposed in the middle of the light emitting unit 21 and the detection unit 22 in the vertical direction.

In the first embodiment and the second embodiment, the transparent substrate 2 has a substantially rectangular shape in a plan view, but may be a substantially circular shape in a plan view, for example, although not shown. Moreover, although the external shape of the shielding member 3 and the support member 19 is a substantially rectangular shape in plan view, for example, although not illustrated, it may be a substantially circular shape in plan view.

Further, in the first embodiment, as shown in FIG. 1A, the shape of the opening 6 is a substantially rectangular shape in a plan view, but may be a substantially circular shape in a plan view, for example, although not shown.

Further, in the first embodiment and the second embodiment, the sealing elements 1 are aligned and arranged in a plurality of rows in the front-rear direction and the left-right direction, but the number of rows is not limited. The elements 1 can also be arranged in a line in either the front-rear direction or the left-right direction.

In the first embodiment and the second embodiment, the support member 19 is disposed on the peripheral edge of the transparent substrate 2, but the support member 19 may not be disposed. In the case where the support member 19 is not disposed, the hard transparent substrate 2 is preferably used as the transparent substrate 2. *

Further, in the sealing element 1 of FIG. 1B, the electrode 9 protrudes from the electrode surface 12, but the electrode 9 may not protrude from the electrode surface 12 as shown in FIG. 4A, for example. That is, the electrode surface 12 can be a flat plane.

Further, the sealing element of FIG. 1B does not include the reflector 30, but the sealing element 1 may include the reflector 30 as shown in FIG. 4B, for example. The sealing element 1 in FIG. 4B includes a reflector 30 so as to be in contact with and surround the side surface of the optical semiconductor element 7, and includes a phosphor layer 8 on the lower surface of the reflector 30 and the optical semiconductor element 7.

Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples. However, the present invention is not limited to the examples and comparative examples. Specific numerical values such as blending ratio (content ratio), physical property values, and parameters used in the following description are described in the above-mentioned “Mode for Carrying Out the Invention”, and the corresponding blending ratio (content ratio) ), Physical property values, parameters, etc. The upper limit value (numerical value defined as “less than” or “less than”) or lower limit value (number defined as “greater than” or “exceeded”) may be substituted. it can.

<Production of shielding member>
95 parts by mass of a silicone resin composition (LR7665, manufactured by Asahi Wacker Co., Ltd., addition reaction curable type) and 5 parts by mass of carbon black were mixed to prepare a dye composition (dye concentration of 5 wt%). The dye composition was applied to an applicator and dried at 100 ° C. for 10 minutes to obtain a shielding sheet having a thickness (height H) of 480 μm.

遮蔽 Using a cutting machine, 25 square (2.04 mm x 2.04 mm) openings in a plan view were formed in the shielding sheet at regular intervals (5 rows x 5 rows) to produce a shielding member. At this time, the width W1 of the frame portion was 5 mm, and the width W2 of the partition wall was 50 μm.

The light transmittance in the thickness direction when the shielding sheet was formed to a thickness of 50 μm was 1% or less. The light transmittance was measured using a spectrophotometer (manufactured by JASCO Corporation, “UV-visible-near infrared spectrophotometer V670”) under the conditions of a wavelength region of 300 to 850 nm and a scanning speed of 1000 nm / min.

<Preparation of sealing element>
As the optical semiconductor element, an LED chip manufactured by Epistar (1.14 mm × 1.14 mm × height 150 μm) was used. Twenty-five sealing elements (1.64 mm × 1.64 mm × height T400 μm) were produced by sealing the light emitting side surface and side surfaces of this optical semiconductor element with a phosphor-containing silicone resin (see FIG. 1B). .

In addition, this sealing element was individually fixed to an array tape (described later), and an optical inspection was performed using a semiconductor test apparatus (described later). As a result, it was confirmed that the chromaticity (CIE, y) in the 25 sealing elements was 0.399 to 0.409, the average value was 0.404, and the range was 0.010.

<Inspection method>
As the transparent substrate, an array tape (thickness 78 μm, “SPV”, manufactured by Nitto Denko Corporation) having an adhesive layer laminated on the upper surface was used. A ring (corresponding to the support member 19) having a rectangular frame shape in plan view was fixed to the peripheral end portion of the upper surface of the transparent substrate, and the array tape was reinforced (see FIG. 2A).

Next, a shielding member was disposed on the upper surface of the transparent substrate (see FIG. 2B).

Next, the sealing element prepared above was arranged in each of the 25 openings to obtain a partition arrangement element assembly in which a shielding member was arranged on the element assembly (FIGS. 2C and 1A). FIG. 1B).

Next, a partition arrangement element assembly was set in an inspection region of a semiconductor test apparatus (chip prober (tape prober), “WPF”, manufactured by Optsystem Co., Ltd.) (see FIG. 2D). Subsequently, by moving the inspection probe and the detection unit of the light emitting unit with respect to each sealing element, the sealing element is caused to emit light, and the white light is detected, and the chromaticity of the light (CIE, y) Was measured (see FIG. 2E).

Example 2
The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the thickness of the shielding sheet, that is, the height H of the shielding member (frame portion and partition wall) was 800 μm.

Example 3
The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the height H of the shielding member was 1000 μm.

Example 4
The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the partition wall width W2 was set to 200 μm. The light transmittance of the shielding sheet having a thickness of 200 μm was 1% or less.

Example 5
The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the partition wall width W2 was set to 2 mm. In addition, the light transmittance of 2 mm thickness of the shielding sheet was 1% or less.

Example 6
The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the partition wall width W2 was 5 mm. In addition, the light transmittance of 5 mm thickness of the shielding sheet was 1% or less.

Example 7
A shielding sheet was obtained in the same manner as in Example 1 except that the mixing ratio of carbon black was changed and the pigment concentration was changed to 0.2 wt% to produce a shielding member. The light transmittance of the shielding sheet having a thickness of 50 μm was 17%.

The chromaticity of the sealing element was measured in the same manner as in Example 1 except that this shielding member was used.

Comparative Example 1
The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the shielding member was not used and the distance between the sealing elements (front-rear direction distance and left-right direction distance) was 200 μm.

Comparative Example 2
The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the height H of the shielding member was 400 μm.

Comparative Example 3
The chromaticity of the sealing element was measured in the same manner as in Example 1 except that the height H of the shielding member was 320 μm.

Comparative Example 4
A shielding sheet was obtained in the same manner as in Example 1 except that the blending ratio of carbon black was changed and the pigment concentration was changed to 0.1 wt% to produce a shielding member. The light transmittance of 50 μm thickness of the shielding sheet was 23%.

<Evaluation of chromaticity>
In the measurement of the chromaticity of Examples 1 to 7 and Comparative Examples 1 to 4, the chromaticity (CIE, y) of the sealing element disposed at the center (third row × third column), 16 disposed outside. Table 1 shows the average chromaticity of the individual sealing elements and the difference R between them.

In Examples 1 to 7, the above results were corrected. Specifically, first, as described above in <Preparation of sealing element>, the average value of the CIE and y values of 25 sealing elements measured individually was 0.404. The reference value was used. In Example 1, the CIE and y values of 25 sealing elements were 0.389 to 0.396, and the average value was 0.394. Therefore, the correction value is set to +0.010 from these differences. Next, this correction value was added to the CIE, y value before correction in Examples 1 to 7. The results are shown in Table 1.

In the comparative example, it is clear that the difference between the sealing element at the center and the sealing element at the outermost periphery is 0.020 or more, which is influenced by the light emission of the adjacent sealing element. No correction was made because it does not make sense.

Although the above invention has been provided as an exemplary embodiment of the present invention, this is merely an example and should not be interpreted in a limited manner. Variations of the present invention that are apparent to one of ordinary skill in the art are within the scope of the following claims.

The method for inspecting an optical semiconductor element with a phosphor layer of the present invention can be used for optical applications such as inspection of a white light semiconductor device, for example.

DESCRIPTION OF SYMBOLS 1 Sealing element 2 Transparent base material 5 Partition 7 Optical semiconductor element 8 Phosphor layer 16 Element assembly 24 Inspection probe

Claims

A method for inspecting an optical semiconductor element with a phosphor layer comprising an optical semiconductor element and a phosphor layer,
In the element assembly in which a plurality of the optical semiconductor elements with phosphor layers are arranged at intervals in the plane direction, an inspection probe is brought into contact with one optical semiconductor element with phosphor layers, and the one phosphor layer A light emitting step of emitting light from the attached semiconductor element; and
A detection step of detecting light from the optical semiconductor element with one phosphor layer;
In the light emitting step, a partition wall is provided between the one optical semiconductor element with a phosphor layer and another optical semiconductor element with a phosphor layer arranged adjacent to the one optical semiconductor element with the phosphor layer in a plane direction. Is placed,
The light transmittance of the partition wall is 20% or less,
The inspection method of an optical semiconductor element with a phosphor layer, wherein an orthogonal direction length orthogonal to the surface direction of the partition wall is longer than an orthogonal direction length of the one optical semiconductor element with a phosphor layer.
2. The phosphor layer-attached device according to claim 1, wherein the perpendicular length of the partition wall is 1.2 times or more of the orthogonal direction length of the one optical semiconductor element with the phosphor layer. 3. Inspection method for optical semiconductor elements.
2. The inspection method for an optical semiconductor element with a phosphor layer according to claim 1, wherein the partition wall is disposed so as to surround the one optical semiconductor element with a phosphor layer.
The element assembly includes a base material on which the phosphor layer-attached optical semiconductor element is disposed,
In the light emitting step, the partition is disposed on one surface in the thickness direction of the base material between the one optical semiconductor element with a phosphor layer and the other optical semiconductor element with a phosphor layer. The inspection method of the optical semiconductor element with a fluorescent substance layer of Claim 1.
The inspection method for an optical semiconductor element with a phosphor layer according to claim 1, wherein the inspection probe includes the partition wall.