WO2017051994A1 - Equipment for manufacturing three-dimensional fluorescent layer - Google Patents
Equipment for manufacturing three-dimensional fluorescent layer Download PDFInfo
- Publication number
- WO2017051994A1 WO2017051994A1 PCT/KR2015/014175 KR2015014175W WO2017051994A1 WO 2017051994 A1 WO2017051994 A1 WO 2017051994A1 KR 2015014175 W KR2015014175 W KR 2015014175W WO 2017051994 A1 WO2017051994 A1 WO 2017051994A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- fluorescent layer
- dimensional fluorescent
- horizontal frame
- light emitting
- dimensional
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000000463 material Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000945 filler Substances 0.000 claims description 5
- 239000011347 resin Substances 0.000 description 14
- 229920005989 resin Polymers 0.000 description 14
- 239000011521 glass Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Definitions
- the present invention relates to a three-dimensional fluorescent layer manufacturing equipment, and more specifically, to manufacture a three-dimensional fluorescent layer for converting the light provided by the side and the top surface of the light emitting diode by changing the wavelength of light emitted from the side and the top surface of the light emitting diode. It's about equipment.
- the conventional CSP was manufactured after arranging light emitting diodes and coating a phosphor and a resin material, followed by a dicing process or a grinding process.
- the hardness of a resin material is a grade similar to the hardness of glass.
- the resin material was frequently damaged during the dicing or polishing process.
- a resin material having a hardness similar to that of glass is used, cracks are generated in the resin material during high power light emitting diode emission due to the high hardness of the resin material, thereby causing serious reliability problems.
- Korean Patent Laid-Open Publication No. 10-2008-0070193 discloses a fluorescent film in which a fluorescent material is formed on a film surface of a resin material, and when the above-mentioned fluorescent film is attached to a light emitting diode, between the fluorescent material and the film of the resin material. It was difficult to reduce the color deviation of white light because it was not effectively attached to the desired position due to electrostatic force or adhesive force, and caused poor reliability due to poor adhesion between light emitting diode and fluorescent film.
- the above-mentioned fluorescent film is formed with a fluorescent material on the film surface of the resin material, it was necessary to cut separately in a shape that can be arranged in a portion other than the electrode pad in order to be attached to the light emitting diode having the electrode pad formed. Because of this, there was a problem that an additional additional process is added.
- the present invention has been made in order to solve the problems of the prior art, the technical problem to be achieved in the present invention, when manufacturing a light emitting diode package without performing a separate dicing (dicing) process or grinding (grinding) process It is to provide a three-dimensional fluorescent layer manufacturing equipment capable of manufacturing a three-dimensional fluorescent layer surrounding the side and top of the light emitting diode.
- a three-dimensional fluorescent layer manufacturing apparatus is a horizontal frame, a base disposed below the horizontal frame to support the horizontal frame and in the predetermined region of the horizontal frame It includes a three-dimensional fluorescent layer pattern hole penetrating through the shape of the three-dimensional fluorescent layer in the vertical direction of the horizontal frame.
- the horizontal frame may be formed of a non-transmissive material that does not transmit light.
- a three-dimensional fluorescent layer surrounding the side and the upper surface of the light emitting diode may be manufactured in a state in which the light emitting diode is disposed inside the three-dimensional fluorescent layer pattern hole.
- the three-dimensional fluorescent layer may include a phosphor, silicon and filler.
- a three-dimensional fluorescent layer manufacturing apparatus is a horizontal frame, a base disposed below the horizontal frame to support the horizontal frame and in the predetermined region of the horizontal frame It includes a plurality of three-dimensional fluorescent layer pattern holes penetrating through the shape of the three-dimensional fluorescent layer in the vertical direction of the horizontal frame.
- the horizontal frame may be formed of a non-transmissive material that does not transmit light.
- a three-dimensional fluorescent layer surrounding the side and the upper surface of the light emitting diode in a state in which a plurality of light emitting diodes are disposed inside each of the three-dimensional fluorescent layer pattern hole Can be.
- the three-dimensional fluorescent layer may include a phosphor, silicon and filler.
- the resin material including the phosphor there is no need to perform a dicing process or a polishing process.
- the three-dimensional fluorescent layer manufacturing equipment since the three-dimensional fluorescent layer surrounding the side and the upper surface of the light emitting diode is manufactured in the state that the light emitting diode is disposed inside the three-dimensional fluorescent layer pattern hole, It is not greatly affected by particle size.
- the type and hardness of the resin It is not greatly affected by the back.
- FIG. 1 is a perspective view of a three-dimensional fluorescent layer manufacturing equipment according to an embodiment of the present invention.
- FIG. 2 is a cross-sectional view of a three-dimensional fluorescent layer manufactured in the state that the light emitting diode is disposed in the three-dimensional fluorescent layer manufacturing equipment according to an embodiment of the present invention.
- FIG. 3 is a perspective view of a three-dimensional fluorescent layer manufacturing equipment according to another embodiment of the present invention.
- FIG. 4 is a cross-sectional view of a three-dimensional fluorescent layer manufactured in a state where the light emitting diode is disposed in the three-dimensional fluorescent layer manufacturing equipment according to another embodiment of the present invention.
- 3D fluorescent layer manufacturing equipment may include a horizontal frame 12000, the base 11000 and the three-dimensional fluorescent layer pattern hole 12111, the present invention 3D fluorescent layer manufacturing equipment according to another embodiment of the horizontal frame 22000, the base 21000 and a plurality of three-dimensional fluorescent layer pattern holes 22111 to 22114, 22121 to 22124, 22131 to 22134, 22141 to 22144).
- the horizontal frames 12000 and 22000 may be formed of a non-transparent material through which light is not transmitted. Specifically, it may be formed of a non-permeable metal material such as aluminum or stainless steel (SUS), or a non-permeable insulating material such as silicon or silicon oxide. As described above, when the horizontal frames 12000 and 22000 are formed of an impermeable material through which light is not transmitted, the three-dimensional fluorescent layer pattern holes 12111, 22111 to 22114, 22121 to 22124, 22131 to 22134 and 22141 to 22144 are three-dimensional.
- the light emitted from the light emitting diodes 13100, 23100, 23200, 23300, and 23400 is applied to the three-dimensional fluorescent layers 13110, 23110, 23210, 23310, and 23410.
- the light emitted from the light emitting diodes 13100, 23100, 23200, 23300, and 23400 is not transmitted to the horizontal frames 12000 and 22000, but the three-dimensional fluorescent layer Since only 1313, 23110, 23210, 23310, and 23410 are transmitted, light emission characteristics of the light emitting diodes 13100, 23100, 23200, 23300, and 23400 may be effectively performed.
- the above-described light emitting diodes 13100, 23100, 23200, 23300, and 23400 may include various types of light emitting diodes including flip chip type light emitting diodes, lateral type light emitting diodes, vertical type light emitting diodes, and the like.
- the bases 11000 and 21000 are disposed under the horizontal frames 12000 and 22000 to support the horizontal frames 12000 and 22000, and the plurality of three-dimensional fluorescent layer pattern holes 12111, 22111 to 22114, 22121 to 22124.
- 22131 to 22134, 22141 to 22144 may be formed of three-dimensional fluorescent layers 13110, 23110, 23210, 23310, and 23410 in a vertical direction of the horizontal frames 12000 and 22000 within a predetermined region of the horizontal frames 12000 and 22000.
- the three-dimensional fluorescent layer pattern holes 12111, 22111 through 22114, 22121 through 22124, 22131 through 22134, and 22141 through 22144 are the same as those of the light emitting diodes 13100, 23100, 23200, 23300, and 23400.
- the three-dimensional fluorescent layer pattern holes 12111, 22111 to 22114, 22121 to 22124, 22131 to 22134, 22141 to 22144 are also rectangular.
- the three-dimensional fluorescent layer pattern holes 12111, 22111 to 22114, 22121 to 22124, 22131 to 22134, and 22141 to 22144 are also circular.
- a plurality of light emitting diodes (13100, 23100, 23200, 23300, 23400) is the three-dimensional fluorescent layer pattern hole (12111, 22111) 3D fluorescent layers 13110, which surround side and top surfaces of the light emitting diodes 13100, 23100, 23200, 23300, and 23400 in a state of being disposed inside the light emitting diodes 13114, 22121, 22124, 22131, 22134, 22141, and 22144, respectively.
- 23110, 23210, 23310, and 23410 are manufactured, and the three-dimensional fluorescent layers 13110, 23110, 23210, 23310, and 23410 include phosphors, silicon, and fillers.
- the light emitting diodes 13100, 23100, 23200, 23300, and 23400 may have three-dimensional fluorescent layer pattern holes 12111, 22111 to 22114, 22121 to 22124, 22131 to 22134, and 22141 to. Since the three-dimensional fluorescent layers 13110, 23110, 23210, 23310, and 23410 surrounding the sides and the upper surface of the light emitting diodes 13100, 23100, 23200, 23300, and 23400 in the state of being disposed inside the 22144 are manufactured, phosphors are included. There is no need to perform a dicing step or a polishing step of the used resin material.
- the three-dimensional fluorescent layer manufacturing equipment according to the embodiments of the present invention, the light emitting diodes (13100, 23100, 23200, 23300, 23400) three-dimensional fluorescent layer pattern holes (12111, 22111 to 22114, 22121 to 22124, 22131 to 22134, Since the three-dimensional fluorescent layers 13110, 23110, 23210, 23310, and 23410 surrounding the sides and the upper surface of the light emitting diodes 13100, 23100, 23200, 23300, and 23400 in the state disposed inside the 22141 to 22144 are manufactured, the phosphor It is not greatly affected by the type and particle size of the.
- the light emitting diodes 13100, 23100, 23200, 23300, and 23400 may have three-dimensional fluorescent layer pattern holes 12111, 22111 to 22114, 22121 to 22124, 22131 to 22134, and 22141 to. Since the three-dimensional fluorescent layers 13110, 23110, 23210, 23310, and 23410 that surround the side and top surfaces of the light emitting diodes 13100, 23100, 23200, 23300, and 23400 in the state of being disposed inside the 22144 are made of resin, It is not greatly influenced by type and hardness.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention comprises an equipment for manufacturing a three-dimensional fluorescent layer which comprises: a horizontal frame; a base which is arranged at the lower part of the horizontal frame to support the horizontal frame; and a three-dimensional fluorescent layer pattern hole which penetrates in the shape of the three-dimensional fluorescent layer in the vertical direction of the horizontal frame within a predetermined region of the horizontal frame.
Description
본 발명은 삼차원 형광층 제조 장비에 관한 것으로서, 보다 상세하게는 발광 다이오드의 측면과 상면으로부터 발광되는 빛의 파장을 변이시켜 발광 다이오드의 측면과 상면이 제공하는 빛을 백색광으로 변환시키는 삼차원 형광층 제조 장비에 관한 것이다.The present invention relates to a three-dimensional fluorescent layer manufacturing equipment, and more specifically, to manufacture a three-dimensional fluorescent layer for converting the light provided by the side and the top surface of the light emitting diode by changing the wavelength of light emitted from the side and the top surface of the light emitting diode. It's about equipment.
요즘 GaN에 Al 또는 In을 첨가한 발광 다이오드는 종래의 백열등에 비해 긴 수명, 낮은 전력 소비, 우수한 밝기, 인체에 유해하지 않은 환경 친화적 요소 등으로 인하여 주목받고 있으며, 특히 CSP(Chip Scale Package)를 채용하여 백색광을 제공하는 발광 다이오드 칩이 더욱 더 각광받고 있다.Nowadays, light emitting diodes in which Al or In are added to GaN are attracting attention due to longer lifespan, lower power consumption, superior brightness, and environmentally friendly elements that are not harmful to human bodies, compared to conventional incandescent lamps. In particular, CSP (Chip Scale Package) Light emitting diode chips, which employ white light to provide white light, are increasingly attracting attention.
상술한 CSP(Chip Scale Package)에 적용된 발광 다이오드는 측면과 상면에서 청색이 발광되며, 발광된 청색광을 백색광을 변환하기 위해서는 발광 다이오드의 측면과 상면에 형광층을 배치시켜야만 한다. In the light emitting diode applied to the chip scale package (CSP) described above, blue light is emitted from the side and the top surface, and in order to convert the emitted blue light into the white light, a fluorescent layer must be disposed on the side and the top surface of the light emitting diode.
종래의 CSP는 발광 다이오드를 배열하고 형광체와 수지재를 코팅한 후에 다이싱(Dicing) 공정 혹은 연마(Grinding) 공정을 거친 후에 제조되었다. 상술한 다이싱 공정이나 연마 공정을 수행하기 위해서는 수지재의 경도가 유리의 경도와 비슷한 정도인 것이 바람직하다. 경도가 유리보다 상당히 낮은 수지재를 사용하는 경우 다이싱 공정이나 연마 공정을 수행하는 과정에서 수지재가 파손되는 빈도가 높았다. 경도가 유리와 비슷한 수지재가 사용되는 경우에는 수지재의 높은 경도로 인하여 고출력 발광 다이오드 발광시에 수지재에 크랙(Crack)이 발생하여 심각한 신뢰성 문제를 발생시켰다.The conventional CSP was manufactured after arranging light emitting diodes and coating a phosphor and a resin material, followed by a dicing process or a grinding process. In order to perform the dicing process and polishing process mentioned above, it is preferable that the hardness of a resin material is a grade similar to the hardness of glass. In the case of using a resin material having a hardness lower than that of glass, the resin material was frequently damaged during the dicing or polishing process. When a resin material having a hardness similar to that of glass is used, cracks are generated in the resin material during high power light emitting diode emission due to the high hardness of the resin material, thereby causing serious reliability problems.
한편, 대한민국 공개특허공보 10-2008-0070193에는 수지재의 필름 면상에 형광물질이 형성되어 있는 형광필름이 게시되어 있으며, 상술한 형광필름이 발광 다이오드에 부착되는 경우에 형광물질과 수지재의 필름 사이에 정전기력(Electrostatic force)이나 접착력(Adhesive force)으로 인하여 원하는 위치에 효과적으로 부착되지 않아서 백색광의 색 편차를 줄이는 것이 어려웠으며 발광 다이오드와 형광필름의 접착력이 좋지 않아 신뢰성 문제를 발생시켰다.On the other hand, Korean Patent Laid-Open Publication No. 10-2008-0070193 discloses a fluorescent film in which a fluorescent material is formed on a film surface of a resin material, and when the above-mentioned fluorescent film is attached to a light emitting diode, between the fluorescent material and the film of the resin material. It was difficult to reduce the color deviation of white light because it was not effectively attached to the desired position due to electrostatic force or adhesive force, and caused poor reliability due to poor adhesion between light emitting diode and fluorescent film.
또한, 상술한 형광필름은 수지재의 필름 면상에 형광물질이 형성되어 있으므로, 전극 패드가 형성되어 있는 발광 다이오드에 부착되기 위해서는 미리 전극 패드 이외의 부분에 배치될 수 있는 형상으로 재단하는 것이 별도로 필요했으며, 이로 인하여 별도의 부가적인 공정이 추가되는 문제점이 있었다.In addition, the above-mentioned fluorescent film is formed with a fluorescent material on the film surface of the resin material, it was necessary to cut separately in a shape that can be arranged in a portion other than the electrode pad in order to be attached to the light emitting diode having the electrode pad formed. Because of this, there was a problem that an additional additional process is added.
본 발명은 종래 기술의 문제점을 해결하기 위하여 안출된 것으로, 본 발명이 이루고자 하는 기술적 과제는, 발광 다이오드 패키지를 제조할 경우 별도의 다이싱(dicing) 공정이나 연마(grinding) 공정을 수행하지 않으면서도 발광 다이오드의 측면과 상면을 둘러싸는 삼차원 형광층을 제조할 수 있는 삼차원 형광층 제조 장비를 제공하는 것이다. The present invention has been made in order to solve the problems of the prior art, the technical problem to be achieved in the present invention, when manufacturing a light emitting diode package without performing a separate dicing (dicing) process or grinding (grinding) process It is to provide a three-dimensional fluorescent layer manufacturing equipment capable of manufacturing a three-dimensional fluorescent layer surrounding the side and top of the light emitting diode.
본 발명이 이루고자 하는 기술적 과제들은 이상에서 언급한 기술적 과제들로 제한되지 않으며, 언급되지 않은 또 다른 기술적 과제들은 아래의 기재로부터 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 명확하게 이해될 수 있을 것이다.Technical problems to be achieved by the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned above will be clearly understood by those skilled in the art from the following description. Could be.
상기와 같은 목적을 달성하기 위하여 본 발명의 일 실시예에 따른 삼차원 형광층 제조 장비는 수평 프레임, 상기 수평 프레임의 하부에 배치되어 상기 수평 프레임을 지지하는 베이스 및 상기 수평 프레임의 소정의 영역 내에 상기 수평 프레임의 수직 방향으로 삼차원 형광층의 형상대로 관통되어 뚫려 있는 삼차원 형광층 패턴홀을 포함한다.In order to achieve the above object, a three-dimensional fluorescent layer manufacturing apparatus according to an embodiment of the present invention is a horizontal frame, a base disposed below the horizontal frame to support the horizontal frame and in the predetermined region of the horizontal frame It includes a three-dimensional fluorescent layer pattern hole penetrating through the shape of the three-dimensional fluorescent layer in the vertical direction of the horizontal frame.
본 발명의 일 실시예에 따른 삼차원 형광층 제조 장비는, 상기 수평 프레임이 빛이 투과되지 않는 비투과성 물질로 형성될 수 있다.In the three-dimensional fluorescent layer manufacturing equipment according to an embodiment of the present invention, the horizontal frame may be formed of a non-transmissive material that does not transmit light.
본 발명의 일 실시예에 따른 삼차원 형광층 제조 장비는, 발광 다이오드가 상기 삼차원 형광층 패턴홀의 내부에 배치된 상태에서 상기 발광 다이오드의 측면과 상면을 둘러싸는 삼차원 형광층이 제조될 수 있다.In the three-dimensional fluorescent layer manufacturing equipment according to an embodiment of the present invention, a three-dimensional fluorescent layer surrounding the side and the upper surface of the light emitting diode may be manufactured in a state in which the light emitting diode is disposed inside the three-dimensional fluorescent layer pattern hole.
본 발명의 일 실시예에 따른 삼차원 형광층 제조 장비는, 상기 삼차원 형광층이 형광체, 실리콘 및 필러를 포함할 수 있다.In the three-dimensional fluorescent layer manufacturing equipment according to an embodiment of the present invention, the three-dimensional fluorescent layer may include a phosphor, silicon and filler.
상기와 같은 목적을 달성하기 위하여 본 발명의 다른 실시예에 따른 삼차원 형광층 제조 장비는 수평 프레임, 상기 수평 프레임의 하부에 배치되어 상기 수평 프레임을 지지하는 베이스 및 상기 수평 프레임의 소정의 영역 내에 상기 수평 프레임의 수직 방향으로 삼차원 형광층의 형상대로 관통되어 뚫려 있는 삼차원 형광층 패턴홀을 다수로 포함한다.In order to achieve the above object, a three-dimensional fluorescent layer manufacturing apparatus according to another embodiment of the present invention is a horizontal frame, a base disposed below the horizontal frame to support the horizontal frame and in the predetermined region of the horizontal frame It includes a plurality of three-dimensional fluorescent layer pattern holes penetrating through the shape of the three-dimensional fluorescent layer in the vertical direction of the horizontal frame.
본 발명의 다른 실시예에 따른 삼차원 형광층 제조 장비는, 상기 수평 프레임이 빛이 투과되지 않는 비투과성 물질로 형성될 수 있다.In the three-dimensional fluorescent layer manufacturing equipment according to another embodiment of the present invention, the horizontal frame may be formed of a non-transmissive material that does not transmit light.
본 발명의 다른 실시예에 따른 삼차원 형광층 제조 장비는, 다수의 발광 다이오드가 상기 삼차원 형광층 패턴홀 각각의 내부에 배치된 상태에서 상기 발광 다이오드의 측면과 상면을 둘러싸는 삼차원 형광층이 제조될 수 있다.In the three-dimensional fluorescent layer manufacturing equipment according to another embodiment of the present invention, a three-dimensional fluorescent layer surrounding the side and the upper surface of the light emitting diode in a state in which a plurality of light emitting diodes are disposed inside each of the three-dimensional fluorescent layer pattern hole Can be.
본 발명의 다른 실시예에 따른 삼차원 형광층 제조 장비는, 상기 삼차원 형광층이 형광체, 실리콘 및 필러를 포함할 수 있다.In the three-dimensional fluorescent layer manufacturing equipment according to another embodiment of the present invention, the three-dimensional fluorescent layer may include a phosphor, silicon and filler.
본 발명의 실시예들에 따른 삼차원 형광층 제조 장비는 발광 다이오드가 삼차원 형광층 패턴홀의 내부에 배치된 상태에서 발광 다이오드의 측면과 상면을 둘러싸는 삼차원 형광층이 제조되므로, 형광체가 포함된 수지재의 다이싱 공정이나 연마 공정을 수행할 필요가 없다.In the three-dimensional fluorescent layer manufacturing equipment according to the embodiments of the present invention, since the three-dimensional fluorescent layer surrounding the side and the upper surface of the light emitting diode is manufactured in a state where the light emitting diode is disposed inside the three-dimensional fluorescent layer pattern hole, the resin material including the phosphor There is no need to perform a dicing process or a polishing process.
또한, 본 발명의 실시예들에 따른 삼차원 형광층 제조 장비는 발광 다이오드가 삼차원 형광층 패턴홀의 내부에 배치된 상태에서 발광 다이오드의 측면과 상면을 둘러싸는 삼차원 형광층이 제조되므로, 형광체의 종류와 입자 크기 등에 크게 영향을 받지 않는다.In addition, the three-dimensional fluorescent layer manufacturing equipment according to the embodiments of the present invention, since the three-dimensional fluorescent layer surrounding the side and the upper surface of the light emitting diode is manufactured in the state that the light emitting diode is disposed inside the three-dimensional fluorescent layer pattern hole, It is not greatly affected by particle size.
본 발명의 실시예들에 따른 삼차원 형광층 제조 장비는 발광 다이오드가 삼차원 형광층 패턴홀의 내부에 배치된 상태에서 발광 다이오드의 측면과 상면을 둘러싸는 삼차원 형광층이 제조되므로, 수지제의 종류와 경도 등에 크게 영향을 받지 않는다.In the three-dimensional fluorescent layer manufacturing equipment according to embodiments of the present invention, since the three-dimensional fluorescent layer surrounding the side and the upper surface of the light emitting diode is manufactured in a state where the light emitting diode is disposed inside the three-dimensional fluorescent layer pattern hole, the type and hardness of the resin It is not greatly affected by the back.
도 1은 본 발명의 일 실시예에 따른 삼차원 형광층 제조 장비의 사시도.1 is a perspective view of a three-dimensional fluorescent layer manufacturing equipment according to an embodiment of the present invention.
도 2는 본 발명의 일 실시예에 따른 삼차원 형광층 제조 장비에 발광 다이오드가 배치된 상태에서 삼차원 형광층이 제조된 단면도.2 is a cross-sectional view of a three-dimensional fluorescent layer manufactured in the state that the light emitting diode is disposed in the three-dimensional fluorescent layer manufacturing equipment according to an embodiment of the present invention.
도 3은 본 발명의 다른 실시예에 따른 삼차원 형광층 제조 장비의 사시도.3 is a perspective view of a three-dimensional fluorescent layer manufacturing equipment according to another embodiment of the present invention.
도 4는 본 발명의 다른 실시예에 따른 삼차원 형광층 제조 장비에 발광 다이오드가 배치된 상태에서 삼차원 형광층이 제조된 단면도.4 is a cross-sectional view of a three-dimensional fluorescent layer manufactured in a state where the light emitting diode is disposed in the three-dimensional fluorescent layer manufacturing equipment according to another embodiment of the present invention.
이하, 본 발명의 바람직한 실시예를 첨부한 도면을 참조하여 설명하기로 한다. Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
본 발명의 일 실시예에 따른 삼차원 형광층 제조 장비는 도 1에 도시된 것처럼, 수평 프레임(12000), 베이스(11000) 및 삼차원 형광층 패턴홀(12111)을 포함하여 구성될 수 있으며, 본 발명의 다른 실시예에 따른 삼차원 형광층 제조 장비는 도 3에 도시된 것처럼, 수평 프레임(22000), 베이스(21000) 및 다수의 삼차원 형광층 패턴홀(22111 내지 22114, 22121 내지 22124, 22131 내지 22134, 22141 내지 22144)을 포함하여 구성될 수 있다.3D fluorescent layer manufacturing equipment according to an embodiment of the present invention, as shown in Figure 1, may include a horizontal frame 12000, the base 11000 and the three-dimensional fluorescent layer pattern hole 12111, the present invention 3D fluorescent layer manufacturing equipment according to another embodiment of the horizontal frame 22000, the base 21000 and a plurality of three-dimensional fluorescent layer pattern holes 22111 to 22114, 22121 to 22124, 22131 to 22134, 22141 to 22144).
여기에서, 수평 프레임(12000, 22000)은 빛이 투과되지 않는 비투과성 물질로 형성될 수 있다. 구체적으로, 알루미늄, SUS(Steel Use Stainless) 등의 비투과성 금속 물질이나 실리콘, 실리콘 옥사이드 등 비투과성 절연 물질로 형성될 수 있다. 상술한 것처럼, 수평 프레임(12000, 22000)을 빛이 투과되지 않은 비투과성 물질로 형성하면, 삼차원 형광층 패턴홀(12111, 22111 내지 22114, 22121 내지 22124, 22131 내지 22134, 22141 내지 22144)에서 삼차원 형광층(13110, 23110, 23210, 23310, 23410)을 제조한 뒤에 발광 다이오드(13100, 23100, 23200, 23300, 23400)에서 발광되는 빛을 삼차원 형광층(13110, 23110, 23210, 23310, 23410)에 투과시켜 형광층을 통과한 빛의 특성을 테스트를 수행하는 경우에 발광 다이오드(13100, 23100, 23200, 23300, 23400)에서 발광되는 빛이 수평 프레임(12000, 22000)에는 투과되지 아니하고, 삼차원 형광층(13110, 23110, 23210, 23310, 23410)에만 투과되므로, 발광 다이오드(13100, 23100, 23200, 23300, 23400)의 발광 특성 테스트를 효과적으로 수행할 수 있다. 상술한 발광 다이오드(13100, 23100, 23200, 23300, 23400)는 플립 칩 타입의 발광 다이오드, 래터럴 타입의 발광 다이오드, 버티컬 타입의 발광 다이오드 등을 포함하여 다양한 타입의 발광 다이오드가 채용될 수 있다. Here, the horizontal frames 12000 and 22000 may be formed of a non-transparent material through which light is not transmitted. Specifically, it may be formed of a non-permeable metal material such as aluminum or stainless steel (SUS), or a non-permeable insulating material such as silicon or silicon oxide. As described above, when the horizontal frames 12000 and 22000 are formed of an impermeable material through which light is not transmitted, the three-dimensional fluorescent layer pattern holes 12111, 22111 to 22114, 22121 to 22124, 22131 to 22134 and 22141 to 22144 are three-dimensional. After the fluorescent layers 13110, 23110, 23210, 23310, and 23410 are manufactured, the light emitted from the light emitting diodes 13100, 23100, 23200, 23300, and 23400 is applied to the three-dimensional fluorescent layers 13110, 23110, 23210, 23310, and 23410. In the case of testing the characteristics of the light passing through the fluorescent layer, the light emitted from the light emitting diodes 13100, 23100, 23200, 23300, and 23400 is not transmitted to the horizontal frames 12000 and 22000, but the three-dimensional fluorescent layer Since only 1313, 23110, 23210, 23310, and 23410 are transmitted, light emission characteristics of the light emitting diodes 13100, 23100, 23200, 23300, and 23400 may be effectively performed. The above-described light emitting diodes 13100, 23100, 23200, 23300, and 23400 may include various types of light emitting diodes including flip chip type light emitting diodes, lateral type light emitting diodes, vertical type light emitting diodes, and the like.
한편, 베이스(11000, 21000)는 수평 프레임(12000, 22000)의 하부에 배치되어 상기 수평 프레임(12000, 22000)을 지지하고, 다수의 삼차원 형광층 패턴홀(12111, 22111 내지 22114, 22121 내지 22124, 22131 내지 22134, 22141 내지 22144)은 상기 수평 프레임(12000, 22000)의 소정의 영역 내에 상기 수평 프레임(12000, 22000)의 수직 방향으로 삼차원 형광층(13110, 23110, 23210, 23310, 23410)의 형상대로 관통되어 뚫려 있으며, 이러한 삼차원 형광층 패턴홀(12111, 22111 내지 22114, 22121 내지 22124, 22131 내지 22134, 22141 내지 22144)은 발광 다이오드(13100, 23100, 23200, 23300, 23400)의 형상과 동일하게 형성될 수 있다. 즉, 발광 다이오드(13100, 23100, 23200, 23300, 23400)의 형상이 사각형인 경우에는 삼차원 형광층 패턴홀(12111, 22111 내지 22114, 22121 내지 22124, 22131 내지 22134, 22141 내지 22144)도 사각형이고, 발광 다이오드(13100, 23100, 23200, 23300, 23400)의 형상이 원형인 경우에는 삼차원 형광층 패턴홀(12111, 22111 내지 22114, 22121 내지 22124, 22131 내지 22134, 22141 내지 22144)도 원형이다.Meanwhile, the bases 11000 and 21000 are disposed under the horizontal frames 12000 and 22000 to support the horizontal frames 12000 and 22000, and the plurality of three-dimensional fluorescent layer pattern holes 12111, 22111 to 22114, 22121 to 22124. , 22131 to 22134, 22141 to 22144 may be formed of three-dimensional fluorescent layers 13110, 23110, 23210, 23310, and 23410 in a vertical direction of the horizontal frames 12000 and 22000 within a predetermined region of the horizontal frames 12000 and 22000. The three-dimensional fluorescent layer pattern holes 12111, 22111 through 22114, 22121 through 22124, 22131 through 22134, and 22141 through 22144 are the same as those of the light emitting diodes 13100, 23100, 23200, 23300, and 23400. Can be formed. That is, when the light emitting diodes 13100, 23100, 23200, 23300, and 23400 have a rectangular shape, the three-dimensional fluorescent layer pattern holes 12111, 22111 to 22114, 22121 to 22124, 22131 to 22134, 22141 to 22144 are also rectangular. When the light emitting diodes 13100, 23100, 23200, 23300, and 23400 have a circular shape, the three-dimensional fluorescent layer pattern holes 12111, 22111 to 22114, 22121 to 22124, 22131 to 22134, and 22141 to 22144 are also circular.
본 발명의 실시예들에 따른 삼차원 형광층 제조 장비는 도 2 또는 도 4에 도시된 것처럼, 다수의 발광 다이오드(13100, 23100, 23200, 23300, 23400)가 상기 삼차원 형광층 패턴홀(12111, 22111 내지 22114, 22121 내지 22124, 22131 내지 22134, 22141 내지 22144) 각각의 내부에 배치된 상태에서 상기 발광 다이오드(13100, 23100, 23200, 23300, 23400)의 측면과 상면을 둘러싸는 삼차원 형광층(13110, 23110, 23210, 23310, 23410)이 제조되며, 상기 삼차원 형광층(13110, 23110, 23210, 23310, 23410)은 형광체, 실리콘 및 필러를 포함한다.In the three-dimensional fluorescent layer manufacturing equipment according to embodiments of the present invention, as shown in Figure 2 or 4, a plurality of light emitting diodes (13100, 23100, 23200, 23300, 23400) is the three-dimensional fluorescent layer pattern hole (12111, 22111) 3D fluorescent layers 13110, which surround side and top surfaces of the light emitting diodes 13100, 23100, 23200, 23300, and 23400 in a state of being disposed inside the light emitting diodes 13114, 22121, 22124, 22131, 22134, 22141, and 22144, respectively. 23110, 23210, 23310, and 23410 are manufactured, and the three-dimensional fluorescent layers 13110, 23110, 23210, 23310, and 23410 include phosphors, silicon, and fillers.
본 발명의 실시예들에 따른 삼차원 형광층 제조 장비는 발광 다이오드(13100, 23100, 23200, 23300, 23400)가 삼차원 형광층 패턴홀(12111, 22111 내지 22114, 22121 내지 22124, 22131 내지 22134, 22141 내지 22144)의 내부에 배치된 상태에서 발광 다이오드(13100, 23100, 23200, 23300, 23400)의 측면과 상면을 둘러싸는 삼차원 형광층(13110, 23110, 23210, 23310, 23410)이 제조되므로, 형광체가 포함된 수지재의 다이싱 공정이나 연마 공정을 수행할 필요가 없다.In the three-dimensional fluorescent layer manufacturing equipment according to the embodiments of the present invention, the light emitting diodes 13100, 23100, 23200, 23300, and 23400 may have three-dimensional fluorescent layer pattern holes 12111, 22111 to 22114, 22121 to 22124, 22131 to 22134, and 22141 to. Since the three-dimensional fluorescent layers 13110, 23110, 23210, 23310, and 23410 surrounding the sides and the upper surface of the light emitting diodes 13100, 23100, 23200, 23300, and 23400 in the state of being disposed inside the 22144 are manufactured, phosphors are included. There is no need to perform a dicing step or a polishing step of the used resin material.
또한, 본 발명의 실시예들에 따른 삼차원 형광층 제조 장비는 발광 다이오드(13100, 23100, 23200, 23300, 23400)가 삼차원 형광층 패턴홀(12111, 22111 내지 22114, 22121 내지 22124, 22131 내지 22134, 22141 내지 22144)의 내부에 배치된 상태에서 발광 다이오드(13100, 23100, 23200, 23300, 23400)의 측면과 상면을 둘러싸는 삼차원 형광층(13110, 23110, 23210, 23310, 23410)이 제조되므로, 형광체의 종류와 입자 크기 등에 크게 영향을 받지 않는다.In addition, the three-dimensional fluorescent layer manufacturing equipment according to the embodiments of the present invention, the light emitting diodes (13100, 23100, 23200, 23300, 23400) three-dimensional fluorescent layer pattern holes (12111, 22111 to 22114, 22121 to 22124, 22131 to 22134, Since the three-dimensional fluorescent layers 13110, 23110, 23210, 23310, and 23410 surrounding the sides and the upper surface of the light emitting diodes 13100, 23100, 23200, 23300, and 23400 in the state disposed inside the 22141 to 22144 are manufactured, the phosphor It is not greatly affected by the type and particle size of the.
본 발명의 실시예들에 따른 삼차원 형광층 제조 장비는 발광 다이오드(13100, 23100, 23200, 23300, 23400)가 삼차원 형광층 패턴홀(12111, 22111 내지 22114, 22121 내지 22124, 22131 내지 22134, 22141 내지 22144)의 내부에 배치된 상태에서 발광 다이오드(13100, 23100, 23200, 23300, 23400)의 측면과 상면을 둘러싸는 삼차원 형광층(13110, 23110, 23210, 23310, 23410)이 제조되므로, 수지제의 종류와 경도 등에 크게 영향을 받지 않는다.In the three-dimensional fluorescent layer manufacturing equipment according to the embodiments of the present invention, the light emitting diodes 13100, 23100, 23200, 23300, and 23400 may have three-dimensional fluorescent layer pattern holes 12111, 22111 to 22114, 22121 to 22124, 22131 to 22134, and 22141 to. Since the three-dimensional fluorescent layers 13110, 23110, 23210, 23310, and 23410 that surround the side and top surfaces of the light emitting diodes 13100, 23100, 23200, 23300, and 23400 in the state of being disposed inside the 22144 are made of resin, It is not greatly influenced by type and hardness.
이상, 본 발명을 본 발명의 원리를 예시하기 위한 바람직한 실시예와 관련하여 설명하고 도시하였지만, 본 발명은 그와 같이 도시되고 설명된 그대로의 구성 및 작용으로 한정되는 것이 아니다. While the invention has been described and illustrated in connection with a preferred embodiment for illustrating the principles of the invention, the invention is not limited to the configuration and operation as such is shown and described.
오히려, 첨부된 청구범위의 사상 및 범주를 일탈함이 없이 본 발명에 대한 다수의 변경 및 수정이 가능함을 당업자들은 잘 이해할 수 있을 것이다.Rather, it will be apparent to those skilled in the art that many changes and modifications to the present invention are possible without departing from the spirit and scope of the appended claims.
따라서, 그러한 모든 적절한 변경 및 수정과 균등물들도 본 발명의 범위에 속하는 것으로 간주되어야 할 것이다.Accordingly, all such suitable changes and modifications and equivalents should be considered to be within the scope of the present invention.
Claims (8)
- 수평 프레임;Horizontal frame;상기 수평 프레임의 하부에 배치되어 상기 수평 프레임을 지지하는 베이스; 및A base disposed under the horizontal frame to support the horizontal frame; And상기 수평 프레임의 소정의 영역 내에 상기 수평 프레임의 수직 방향으로 삼차원 형광층의 형상대로 관통되어 뚫려 있는 삼차원 형광층 패턴홀을 포함하는 삼차원 형광층 제조 장비.3D fluorescent layer manufacturing equipment comprising a three-dimensional fluorescent layer pattern hole penetrated in a predetermined region of the horizontal frame in the shape of a three-dimensional fluorescent layer in the vertical direction of the horizontal frame.
- 제1항에 있어서,The method of claim 1,상기 수평 프레임은 빛이 투과되지 않는 비투과성 물질로 형성되는 삼차원 형광층 제조 장비.The horizontal frame is a three-dimensional fluorescent layer manufacturing equipment formed of a non-transmissive material that does not transmit light.
- 제1항에 있어서,The method of claim 1,발광 다이오드가 상기 삼차원 형광층 패턴홀의 내부에 배치된 상태에서 상기 발광 다이오드의 측면과 상면을 둘러싸는 삼차원 형광층이 제조되는 삼차원 형광층 제조 장비.3D fluorescent layer manufacturing equipment for producing a three-dimensional fluorescent layer surrounding the side and the upper surface of the light emitting diode in a state that the light emitting diode is disposed inside the three-dimensional fluorescent layer pattern hole.
- 제3항에 있어서,The method of claim 3,상기 삼차원 형광층은 형광체, 실리콘 및 필러를 포함하는 삼차원 형광층 제조 장비.The three-dimensional fluorescent layer is a three-dimensional fluorescent layer manufacturing equipment comprising a phosphor, silicon and filler.
- 수평 프레임;Horizontal frame;상기 수평 프레임의 하부에 배치되어 상기 수평 프레임을 지지하는 베이스; 및A base disposed under the horizontal frame to support the horizontal frame; And상기 수평 프레임의 소정의 영역 내에 상기 수평 프레임의 수직 방향으로 삼차원 형광층의 형상대로 관통되어 뚫려 있는 삼차원 형광층 패턴홀을 다수로 포함하는 삼차원 형광층 제조 장비.3D fluorescent layer manufacturing equipment comprising a plurality of three-dimensional fluorescent layer pattern holes penetrated in a predetermined region of the horizontal frame in the shape of a three-dimensional fluorescent layer in the vertical direction of the horizontal frame.
- 제5항에 있어서,The method of claim 5,상기 수평 프레임은 빛이 투과되지 않는 비투과성 물질로 형성되는 삼차원 형광층 제조 장비.The horizontal frame is a three-dimensional fluorescent layer manufacturing equipment formed of a non-transmissive material that does not transmit light.
- 제5항에 있어서,The method of claim 5,다수의 발광 다이오드가 상기 삼차원 형광층 패턴홀 각각의 내부에 배치된 상태에서 상기 발광 다이오드의 측면과 상면을 둘러싸는 삼차원 형광층이 제조되는 삼차원 형광층 제조 장비.3D fluorescent layer manufacturing equipment for producing a three-dimensional fluorescent layer surrounding the side and the upper surface of the light emitting diode in a state that a plurality of light emitting diodes are disposed inside each of the three-dimensional fluorescent layer pattern hole.
- 제7항에 있어서,The method of claim 7, wherein상기 삼차원 형광층은 형광체, 실리콘 및 필러를 포함하는 삼차원 형광층 제조 장비.The three-dimensional fluorescent layer is a three-dimensional fluorescent layer manufacturing equipment comprising a phosphor, silicon and filler.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150136160A KR20170053750A (en) | 2015-09-25 | 2015-09-25 | Apparatus for fabricating three dimensional Fluorescent Layer |
| KR10-2015-0136160 | 2015-09-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2017051994A1 true WO2017051994A1 (en) | 2017-03-30 |
Family
ID=58386133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2015/014175 WO2017051994A1 (en) | 2015-09-25 | 2015-12-23 | Equipment for manufacturing three-dimensional fluorescent layer |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20170053750A (en) |
| WO (1) | WO2017051994A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090059370A (en) * | 2007-12-06 | 2009-06-11 | 엘지이노텍 주식회사 | Lighting emitting diode and fabrication method thereof |
| JP2011134829A (en) * | 2009-12-24 | 2011-07-07 | Nichia Corp | Light emitting device |
| KR20120019385A (en) * | 2010-08-25 | 2012-03-06 | 삼성엘이디 주식회사 | Phosphor film, method of manufacturing the same, method of coating phosphor layer on an led chip, method of manufacturing led package and led package manufactured thereof |
| KR20150034954A (en) * | 2013-09-27 | 2015-04-06 | (주)라이타이저코리아 | Method for Positioning Fluorescent Layer |
| JP2015076455A (en) * | 2013-10-07 | 2015-04-20 | 豊田合成株式会社 | Light-emitting apparatus |
-
2015
- 2015-09-25 KR KR1020150136160A patent/KR20170053750A/en active Search and Examination
- 2015-12-23 WO PCT/KR2015/014175 patent/WO2017051994A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090059370A (en) * | 2007-12-06 | 2009-06-11 | 엘지이노텍 주식회사 | Lighting emitting diode and fabrication method thereof |
| JP2011134829A (en) * | 2009-12-24 | 2011-07-07 | Nichia Corp | Light emitting device |
| KR20120019385A (en) * | 2010-08-25 | 2012-03-06 | 삼성엘이디 주식회사 | Phosphor film, method of manufacturing the same, method of coating phosphor layer on an led chip, method of manufacturing led package and led package manufactured thereof |
| KR20150034954A (en) * | 2013-09-27 | 2015-04-06 | (주)라이타이저코리아 | Method for Positioning Fluorescent Layer |
| JP2015076455A (en) * | 2013-10-07 | 2015-04-20 | 豊田合成株式会社 | Light-emitting apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170053750A (en) | 2017-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8796712B2 (en) | Phosphor layer and light-emitting device | |
| US9546926B2 (en) | Method of inspecting a light source module for defects, method of manufacturing a light source module, and apparatus for inspecting a light source module | |
| US8716733B2 (en) | Transfer sheet for phosphor layer and light-emitting device | |
| WO2017086535A1 (en) | Method for manufacturing three-dimensional phosphor layer | |
| US9272300B2 (en) | Method and apparatus for manufacturing white light-emitting device | |
| CN107742667A (en) | LED encapsulation method and display device | |
| WO2017051994A1 (en) | Equipment for manufacturing three-dimensional fluorescent layer | |
| JP2017076673A (en) | Method for manufacturing light-emitting device | |
| US9406858B2 (en) | LED module | |
| US9023671B2 (en) | Method of disposing phosphor layers | |
| US20150380322A1 (en) | Method for manufacturing light emitting device | |
| KR101984897B1 (en) | Light emitting diode package and manufacturing method thereof | |
| CN104993029A (en) | Semiconductor light-emitting chip scale package | |
| WO2018190449A1 (en) | Round chip scale package and manufacturing method therefor | |
| KR20150122360A (en) | Package for Light Emitting Device and Method for Manufacturing thereof | |
| US20130229805A1 (en) | Light-emitting device assembly and lighting device | |
| KR20130110064A (en) | Semiconductor board, semiconductor device, and producing method of semiconductor device | |
| JP2017116372A (en) | Method for inspecting optical semiconductor element having phosphor layer | |
| WO2018159883A1 (en) | Convex chip scale package and method for manufacturing same | |
| JP2011100853A (en) | Method of manufacturing led device | |
| US11975519B2 (en) | Method of manufacturing plate-like member and laminate | |
| KR101501553B1 (en) | Light emitting device package | |
| WO2016052783A1 (en) | Method for positioning fluorescent layer | |
| KR102026655B1 (en) | Method for manufacturing chip scale package of one plane light emitting | |
| WO2018155731A1 (en) | Convex chip scale package and method for manufacturing same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15904805 Country of ref document: EP Kind code of ref document: A1 |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 17/07/2018) |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 15904805 Country of ref document: EP Kind code of ref document: A1 |