JP2017076673A - Method for manufacturing light-emitting device - Google Patents

Method for manufacturing light-emitting device Download PDF

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JP2017076673A
JP2017076673A JP2015202421A JP2015202421A JP2017076673A JP 2017076673 A JP2017076673 A JP 2017076673A JP 2015202421 A JP2015202421 A JP 2015202421A JP 2015202421 A JP2015202421 A JP 2015202421A JP 2017076673 A JP2017076673 A JP 2017076673A
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light emitting
resin
light
emitting elements
emitting element
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誠治 山口
Seiji Yamaguchi
誠治 山口
伊藤 浩史
Hiroshi Ito
浩史 伊藤
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a light-emitting device which has a plurality of light-emitting elements, and an uninterrupted phosphor layer covering upper faces of the plurality of light-emitting elements, and which is small in color unevenness.SOLUTION: A method for manufacturing a light-emitting device 1 is provided according to an embodiment of the present invention. The method comprises the steps of: preparing a pair of face-down type light-emitting elements 11 and 12 mounted on a substrate 10; embedding a resin 13 in a region between the light-emitting elements 11 and 12 to a position higher than upper faces of the light-emitting elements 11 and 12; polishing the upper face of the resin 13 to make its height equal to the upper faces of the light-emitting elements 11 and 12, and smoothing their upper faces after curing the resin 13; and forming an uninterrupted phosphor layer 14 to cover the upper faces of the light-emitting elements 11 and 12, and the resin 13 after the polishing step.SELECTED DRAWING: Figure 3

Description

本発明は、発光装置の製造方法に関する。   The present invention relates to a method for manufacturing a light emitting device.

従来の発光装置として、発光素子を直接封止する蛍光体を含有しない第1の封止材と、さらにその第1の封止材を覆う蛍光体を含有する第2の封止材を有する発光装置が知られている(例えば、特許文献1参照)。   As a conventional light-emitting device, light emission having a first sealing material that does not contain a phosphor that directly seals a light-emitting element, and a second sealing material that contains a phosphor that covers the first sealing material An apparatus is known (see, for example, Patent Document 1).

また、従来、蛍光体の単結晶や焼結体、蛍光体と無機物(結合材)との焼結体等からなる板状の光透過部材がフリップチップ実装されたLEDチップの上に設置され、光反射性材料を含む樹脂からなる封止樹脂でLEDチップ及び光透過部材の周囲が被覆された発光素子が知られている(例えば、特許文献2参照)。   Further, conventionally, a plate-like light transmitting member made of a phosphor single crystal or a sintered body, a sintered body of a phosphor and an inorganic substance (binding material), and the like is installed on a flip chip mounted LED chip, A light-emitting element in which the periphery of an LED chip and a light transmission member is covered with a sealing resin made of a resin containing a light-reflective material is known (for example, see Patent Document 2).

また、従来、変換材料の薄い層が製造プロセス中にチップに取り付けられた白色LEDチップが知られている(例えば、特許文献3参照)。   Conventionally, a white LED chip is known in which a thin layer of conversion material is attached to a chip during the manufacturing process (see, for example, Patent Document 3).

特開2010−62286号公報JP 2010-62286 A 国際公開第2009/069671号International Publication No. 2009/069671 特開2009−60113号公報JP 2009-60113 A

本発明の目的の一つは、複数の発光素子と、複数の発光素子の上面を覆う連続した蛍光体層を有する発光装置であって、色むらの少ない発光装置の製造方法を提供することにある。   One of the objects of the present invention is to provide a method for manufacturing a light-emitting device having a plurality of light-emitting elements and a continuous phosphor layer covering the top surfaces of the plurality of light-emitting elements and having less color unevenness. is there.

本発明の一態様は、上記目的を達成するために、下記[1]〜[4]の発光装置の製造方法を提供する。   In order to achieve the above object, one embodiment of the present invention provides a method for manufacturing a light-emitting device according to any one of [1] to [4] below.

[1]基板上に搭載された、フェイスダウン型の2つの発光素子を用意する工程と、前記2つの発光素子の間の領域に、前記2つの発光素子の上面よりも高い位置まで樹脂を埋め込む工程と、前記樹脂が硬化した後、前記樹脂の上面に研磨処理を施し、その高さを前記2つの発光素子と揃え、かつ前記上面を平滑化する工程と、前記研磨処理の後、前記2つの発光素子及び前記樹脂の上面を覆う連続した蛍光体層を形成する工程と、を含む、発光装置の製造方法。 [1] A step of preparing two face-down light emitting elements mounted on a substrate, and a resin is embedded in a region between the two light emitting elements to a position higher than the upper surface of the two light emitting elements. A step of polishing the upper surface of the resin after the resin is cured, aligning the height with the two light emitting elements and smoothing the upper surface, and after the polishing process, Forming a continuous phosphor layer covering the upper surface of the two light emitting elements and the resin.

[2]蛍光体粒子が分散した樹脂を前記2つの発光素子及び前記樹脂の上面に塗布し、硬化させることにより、前記蛍光体層を形成する、上記[1]に記載の発光装置の製造方法。 [2] The method for manufacturing a light-emitting device according to [1], wherein the phosphor layer is formed by applying a resin in which phosphor particles are dispersed to the two light-emitting elements and the upper surface of the resin and curing the resin. .

[3]板状の蛍光体含有部材又は蛍光体を前記2つの発光素子及び前記樹脂の上に載せることにより、前記蛍光体層を形成する、上記[1]に記載の発光装置の製造方法。 [3] The method for manufacturing a light-emitting device according to [1], wherein the phosphor layer is formed by placing a plate-like phosphor-containing member or phosphor on the two light-emitting elements and the resin.

[4]前記樹脂が、透明又は白色の樹脂である、上記[1]〜[3]のいずれか1項に記載の発光装置の製造方法。 [4] The method for manufacturing a light-emitting device according to any one of [1] to [3], wherein the resin is a transparent or white resin.

本発明によれば、複数の発光素子と、複数の発光素子の上面を覆う連続した蛍光体層を有する発光装置であって、色むらの少ない発光装置の製造方法を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, it can provide the manufacturing method of a light-emitting device which is a light-emitting device which has a several fluorescent element and the continuous fluorescent substance layer which covers the upper surface of a several light-emitting element, and there is little color unevenness.

図1は、第1の実施の形態に係る発光装置の垂直断面図である。FIG. 1 is a vertical cross-sectional view of the light emitting device according to the first embodiment. 図2(a)、(b)は、それぞれ比較例としての発光装置の垂直断面図である。2A and 2B are vertical sectional views of a light emitting device as a comparative example, respectively. 図3(a)〜(d)は、第1の実施の形態に係る発光装置の製造工程の一例を示す垂直断面図である。3A to 3D are vertical sectional views showing an example of a manufacturing process of the light emitting device according to the first embodiment. 図4は、樹脂の形成方法の変形例を示す垂直断面図である。FIG. 4 is a vertical sectional view showing a modification of the resin forming method. 図5は、第2の実施の形態に係る発光装置の垂直断面図である。FIG. 5 is a vertical cross-sectional view of the light emitting device according to the second embodiment. 図6(a)〜(d)は、第2の実施の形態に係る発光装置の製造工程の一例を示す垂直断面図である。6A to 6D are vertical sectional views showing an example of a manufacturing process of the light emitting device according to the second embodiment. 図7は、第3の実施の形態に係る発光装置の垂直断面図である。FIG. 7 is a vertical sectional view of the light emitting device according to the third embodiment. 図8(a)〜(d)は、第3の実施の形態に係る発光装置の製造工程の一例を示す垂直断面図である。8A to 8D are vertical sectional views showing an example of a manufacturing process of the light emitting device according to the third embodiment.

〔第1の実施の形態〕
(発光装置の構成)
図1は、第1の実施の形態に係る発光装置1の垂直断面図である。
[First Embodiment]
(Configuration of light emitting device)
FIG. 1 is a vertical cross-sectional view of a light emitting device 1 according to the first embodiment.

発光装置1は、基板10と、基板10上に搭載されたフェイスダウン型の発光素子11及び発光素子12と、発光素子11と発光素子12との間の領域に埋め込まれた樹脂13と、発光素子11、12、及び樹脂13の上面を覆う連続した蛍光体層14と、を有する。   The light-emitting device 1 includes a substrate 10, a face-down light-emitting element 11 and a light-emitting element 12 mounted on the substrate 10, a resin 13 embedded in a region between the light-emitting element 11 and the light-emitting element 12, and light emission And a continuous phosphor layer 14 covering the top surfaces of the elements 11 and 12 and the resin 13.

基板10は、例えば、Al基板、AlN基板等のセラミック基板、表面が絶縁膜で覆われたAl基板やCu基板等の金属基板、又はガラスエポキシ基板である。また、基板10は、発光素子11a及び発光素子11bへの電源供給経路となる配線15を表面に有する。 The substrate 10 is, for example, a ceramic substrate such as an Al 2 O 3 substrate or an AlN substrate, a metal substrate such as an Al substrate or a Cu substrate whose surface is covered with an insulating film, or a glass epoxy substrate. In addition, the substrate 10 has a wiring 15 serving as a power supply path to the light emitting element 11a and the light emitting element 11b on the surface.

発光素子11、12は、それぞれチップ基板11a、12aと、発光層を含む結晶層11b、12bを有する発光素子であり、例えば、LEDチップ又はレーザーダイオードチップである。また、発光素子11、12は、結晶層11b、12bが下側を向いたフェイスダウン型の発光素子である。図1に示される例では、発光素子11、12はフリップチップ型の発光素子である。   The light emitting elements 11 and 12 are light emitting elements having chip substrates 11a and 12a and crystal layers 11b and 12b including a light emitting layer, respectively, and are, for example, LED chips or laser diode chips. The light emitting elements 11 and 12 are face-down type light emitting elements in which the crystal layers 11b and 12b face downward. In the example shown in FIG. 1, the light emitting elements 11 and 12 are flip chip type light emitting elements.

発光素子11の電極11c、11dは、一方がn側電極で、他方がp側電極である。同様に、発光素子12の電極12c、12dは、一方がn側電極で、他方がp側電極である。電極11c、11d、12c、12dは、半田ボール等の導電性部材16を介して配線15に接続される。   One of the electrodes 11c and 11d of the light emitting element 11 is an n-side electrode, and the other is a p-side electrode. Similarly, one of the electrodes 12c and 12d of the light emitting element 12 is an n-side electrode and the other is a p-side electrode. The electrodes 11c, 11d, 12c, and 12d are connected to the wiring 15 through a conductive member 16 such as a solder ball.

樹脂13は、透明又は白色のシリコーン系樹脂やエポキシ系樹脂等の熱硬化性樹脂である。樹脂13が白色である場合、白色顔料を含有する熱硬化性樹脂を用いる。樹脂13の上面は研磨処理により平滑化されており、発光素子11、12の上面(チップ基板11a、12aの上面)と同じ高さに位置する。   The resin 13 is a thermosetting resin such as a transparent or white silicone resin or epoxy resin. When the resin 13 is white, a thermosetting resin containing a white pigment is used. The upper surface of the resin 13 is smoothed by a polishing process and is located at the same height as the upper surfaces of the light emitting elements 11 and 12 (the upper surfaces of the chip substrates 11a and 12a).

例えば、樹脂13が透明の場合は、発光素子11、12から発せられる光をほとんど妨げないため、高い発光効率が得られる。また、樹脂13が白色の場合は、発光素子11、12から側方に発せられる光を反射するため、発光装置1の指向性を高めることができる。   For example, when the resin 13 is transparent, the light emitted from the light emitting elements 11 and 12 is hardly disturbed, so that high light emission efficiency is obtained. Further, when the resin 13 is white, the light emitted from the light emitting elements 11 and 12 to the side is reflected, so that the directivity of the light emitting device 1 can be improved.

蛍光体層14は、例えば、シリコーン系樹脂やエポキシ系樹脂等の透明樹脂と、その透明樹脂中に分散した蛍光体粒子17からなる。蛍光体粒子17の蛍光色は特に限定されず、例えば、黄色系の蛍光体粒子としては、BOS(バリウム・オルソシリケート)系蛍光体や、YAG(イットリウム・アルミニウム・ガーネット)系蛍光体の粒子が用いられる。例えば、発光素子11、12の発光色が青色であり、蛍光体粒子17の蛍光色が黄色である場合は、発光装置1の発光色は白色になる。   The phosphor layer 14 includes, for example, a transparent resin such as a silicone resin or an epoxy resin, and phosphor particles 17 dispersed in the transparent resin. The fluorescent color of the phosphor particles 17 is not particularly limited. For example, examples of yellow phosphor particles include BOS (barium orthosilicate) phosphors and YAG (yttrium aluminum garnet) phosphor particles. Used. For example, when the emission color of the light emitting elements 11 and 12 is blue and the fluorescent color of the phosphor particles 17 is yellow, the emission color of the light emitting device 1 is white.

蛍光体層14は、少なくとも発光素子11、12、及び樹脂13の上面を覆う。また、図1に示されるように、発光素子11の側面のうちの発光素子12と対向していない側面、及び発光素子12の側面のうちの発光素子11と対向していない側面も覆うことが好ましい。   The phosphor layer 14 covers at least the upper surfaces of the light emitting elements 11 and 12 and the resin 13. Further, as shown in FIG. 1, the side surface of the light emitting element 11 that does not face the light emitting element 12 and the side surface of the light emitting element 12 that does not face the light emitting element 11 can also be covered. preferable.

樹脂13の上面が平滑化され、発光素子11、12の上面と同じ高さを有するため、蛍光体層14の平坦性及び厚さの均一性が高い。このため、発光素子11、12から発せられた光の蛍光体層14中の光路差を小さくし、発光装置1の色むらを小さくすることができる。   Since the upper surface of the resin 13 is smoothed and has the same height as the upper surfaces of the light emitting elements 11 and 12, the flatness and thickness uniformity of the phosphor layer 14 are high. For this reason, the optical path difference in the fluorescent substance layer 14 of the light emitted from the light emitting elements 11 and 12 can be reduced, and the color unevenness of the light emitting device 1 can be reduced.

図2(a)、(b)は、それぞれ比較例としての発光装置5、及び発光装置6の垂直断面図である。   2A and 2B are vertical sectional views of a light emitting device 5 and a light emitting device 6 as comparative examples, respectively.

発光装置5は、発光装置1の樹脂13の代わりに、上面が平坦でなく、凸状に湾曲した樹脂51を有する。このため、図2(a)に示されるように、樹脂51上の蛍光体層14も凸状に湾曲しており、この湾曲部分内の発光素子11、12から発せられた光の光路(矢印で例示する)は平坦である場合と比較して長くなる。このため、発光装置5の色むらは、発光装置1の色むらよりも大きくなる。   The light emitting device 5 includes a resin 51 that has a convex upper surface and is not flat, instead of the resin 13 of the light emitting device 1. For this reason, as shown in FIG. 2A, the phosphor layer 14 on the resin 51 is also curved in a convex shape, and the optical path (arrow) of the light emitted from the light emitting elements 11 and 12 in this curved portion. Is longer than the case of being flat. For this reason, the color unevenness of the light emitting device 5 is larger than the color unevenness of the light emitting device 1.

また、発光装置6は、発光装置1の樹脂13の代わりに、上面が平坦でなく、凹状に湾曲した樹脂61を有する。このため、図2(b)に示されるように、樹脂61上の蛍光体層14も凹状に湾曲しており、この湾曲部分内の発光素子11、12から発せられた光の光路(矢印で例示する)は平坦である場合と比較して短くなる。このため、発光装置6の色むらは、発光装置1の色むらよりも大きくなる。   The light emitting device 6 includes a resin 61 that is not flat on the upper surface and is concavely curved instead of the resin 13 of the light emitting device 1. For this reason, as shown in FIG. 2B, the phosphor layer 14 on the resin 61 is also curved in a concave shape, and the optical path of light emitted from the light emitting elements 11 and 12 in this curved portion (indicated by arrows). (Exemplified) is shorter than the flat case. For this reason, the color unevenness of the light emitting device 6 is larger than the color unevenness of the light emitting device 1.

(発光装置の製造方法)
以下に、発光装置1の製造方法の一例について具体的に説明する。
(Method for manufacturing light emitting device)
Below, an example of the manufacturing method of the light-emitting device 1 is demonstrated concretely.

図3(a)〜(d)は、第1の実施の形態に係る発光装置1の製造工程の一例を示す垂直断面図である。   3A to 3D are vertical sectional views showing an example of a manufacturing process of the light emitting device 1 according to the first embodiment.

まず、図3(a)に示されるように、基板10上に搭載された、フェイスダウン型の発光素子11、12を用意する。   First, as shown in FIG. 3A, face-down light emitting elements 11 and 12 mounted on a substrate 10 are prepared.

次に、図3(b)に示されるように、発光素子11と発光素子12の間の領域に、発光素子11及び発光素子12の上面(チップ基板11a、12aの上面)よりも高い位置まで樹脂13をディスペンサーを用いた滴下等によって埋め込む。   Next, as shown in FIG. 3B, in a region between the light emitting element 11 and the light emitting element 12, a position higher than the upper surfaces of the light emitting element 11 and the light emitting element 12 (the upper surfaces of the chip substrates 11a and 12a). The resin 13 is embedded by dropping using a dispenser.

次に、図3(c)に示されるように、樹脂13の上面にCMP(Chemical Mechanical Polishing)等の研磨処理を施し、その高さを発光素子11及び発光素子12の上面と揃え、かつ上面を平滑化する。このとき、発光素子11及び発光素子12はフェイスダウン型の発光素子であり、チップ基板11a、12aの上面がストッパーとして機能するため、樹脂13の研磨処理において発光素子11及び発光素子12がダメージを受けることはない。   Next, as shown in FIG. 3C, the upper surface of the resin 13 is subjected to a polishing process such as CMP (Chemical Mechanical Polishing), and the height thereof is aligned with the upper surfaces of the light-emitting elements 11 and 12. Is smoothed. At this time, the light-emitting element 11 and the light-emitting element 12 are face-down light-emitting elements, and the upper surfaces of the chip substrates 11a and 12a function as stoppers. Therefore, the light-emitting element 11 and the light-emitting element 12 are damaged in the polishing process of the resin 13. I will not receive it.

ここで、研磨処理は、熱処理等によって樹脂13が硬化した後に行うことが求められる。硬化前に研磨処理を施すと、研磨処理後に樹脂13が収縮してその上面の高さが発光素子11及び発光素子12の上面よりも低くなるおそれがあるためである。   Here, the polishing treatment is required to be performed after the resin 13 is cured by heat treatment or the like. This is because if the polishing process is performed before curing, the resin 13 contracts after the polishing process, and the height of the upper surface may be lower than the upper surfaces of the light emitting element 11 and the light emitting element 12.

次に、図3(d)に示されるように、ディスペンサーを用いた滴下、スクリーン印刷による印刷等により、発光素子11、12、及び樹脂13の上面を覆うように蛍光体粒子17を含む樹脂を塗布し、硬化させる。これにより、発光素子11、12、及び樹脂13の上面を覆う連続した蛍光体層14を形成する。   Next, as shown in FIG. 3 (d), a resin containing phosphor particles 17 is applied so as to cover the upper surfaces of the light emitting elements 11, 12 and the resin 13 by dropping using a dispenser, printing by screen printing, or the like. Apply and cure. Thus, a continuous phosphor layer 14 that covers the top surfaces of the light emitting elements 11 and 12 and the resin 13 is formed.

図4は、樹脂13の形成方法の変形例を示す垂直断面図である。図3(b)に示されるように発光素子11と発光素子12の間の領域中にのみ樹脂13を形成するのではなく、図4に示されるように発光素子11と発光素子12の間の領域を埋め、さらに発光素子11と発光素子12の上面を覆うように樹脂13を形成してもよい。その後、樹脂13の上面に研磨処理を施し、さらに発光素子11と発光素子12の周囲の樹脂13を除去することにより、図3(c)に示される形態の樹脂13を得ることができる。なお、周囲の樹脂13は除去しなくてもよい。樹脂13が白色樹脂である場合は、周囲の樹脂13を残すことにより指向性を向上させることができる(後述する第2の実施の形態の樹脂21と同様の形態になる)。   FIG. 4 is a vertical sectional view showing a modification of the method for forming the resin 13. The resin 13 is not formed only in the region between the light emitting element 11 and the light emitting element 12 as shown in FIG. 3B, but between the light emitting element 11 and the light emitting element 12 as shown in FIG. The resin 13 may be formed so as to fill the region and further cover the upper surfaces of the light emitting element 11 and the light emitting element 12. Thereafter, the upper surface of the resin 13 is subjected to polishing treatment, and the resin 13 around the light emitting element 11 and the light emitting element 12 is removed, whereby the resin 13 having the form shown in FIG. 3C can be obtained. The surrounding resin 13 may not be removed. When the resin 13 is a white resin, the directivity can be improved by leaving the surrounding resin 13 (the same form as the resin 21 of the second embodiment described later).

〔第2の実施の形態〕
第2の実施の形態は、蛍光体層の形態において第1の実施の形態と異なる。なお、第1の実施の形態と同様の点については、説明を省略又は簡略化する。
[Second Embodiment]
The second embodiment is different from the first embodiment in the form of the phosphor layer. Note that the description of the same points as in the first embodiment will be omitted or simplified.

(発光装置の構成)
図5は、第2の実施の形態に係る発光装置2の垂直断面図である。
(Configuration of light emitting device)
FIG. 5 is a vertical sectional view of the light emitting device 2 according to the second embodiment.

発光装置2は、基板10と、基板10上に搭載されたフェイスダウン型の発光素子11及び発光素子12と、発光素子11と発光素子12との間の領域に埋め込まれた樹脂21と、発光素子11、12、及び樹脂21の上面を覆う連続した蛍光体層22と、を有する。   The light-emitting device 2 includes a substrate 10, a face-down light-emitting element 11 and a light-emitting element 12 mounted on the substrate 10, a resin 21 embedded in a region between the light-emitting element 11 and the light-emitting element 12, and light emission And a continuous phosphor layer 22 covering the top surfaces of the elements 11 and 12 and the resin 21.

樹脂21は、透明又は白色のシリコーン系樹脂やエポキシ系樹脂等の熱硬化性樹脂である。樹脂21が白色である場合、白色顔料を含有する熱硬化性樹脂を用いる。樹脂21の上面は研磨処理により平滑化されており、発光素子11、12の上面(チップ基板11a、12aの上面)と同じ高さに位置する。   The resin 21 is a thermosetting resin such as a transparent or white silicone resin or epoxy resin. When the resin 21 is white, a thermosetting resin containing a white pigment is used. The upper surface of the resin 21 is smoothed by a polishing process, and is positioned at the same height as the upper surfaces of the light emitting elements 11 and 12 (the upper surfaces of the chip substrates 11a and 12a).

蛍光体層22は、板状の蛍光体含有部材又は蛍光体、例えば、蛍光体粒子が分散した板状の樹脂等の透明部材、板状の蛍光体の焼結体、板状の単結晶蛍光体からなる。蛍光体層22に含まれる、又は蛍光体層22を構成する蛍光体の蛍光色は特に限定されない。   The phosphor layer 22 is a plate-like phosphor-containing member or phosphor, for example, a transparent member such as a plate-like resin in which phosphor particles are dispersed, a plate-like phosphor sintered body, and a plate-like single crystal fluorescence. Consists of the body. The fluorescent color of the phosphor contained in the phosphor layer 22 or constituting the phosphor layer 22 is not particularly limited.

蛍光体層22は板状の部材であるため、樹脂21が形成されていなくても、その形状に変化は生じない。しかしながら、空気中にはハロゲン、硫黄等の電極等を腐食させる元素が含まれているため、発光素子11と発光素子12の間の領域が中空であることは好ましくない。そこで、樹脂21を発光素子11と発光素子12の間の領域に形成することにより、発光素子11、12を保護することができる。   Since the phosphor layer 22 is a plate-like member, the shape does not change even if the resin 21 is not formed. However, since air contains elements that corrode electrodes such as halogen and sulfur, it is not preferable that the region between the light emitting element 11 and the light emitting element 12 is hollow. Therefore, by forming the resin 21 in a region between the light emitting element 11 and the light emitting element 12, the light emitting elements 11 and 12 can be protected.

また、発光素子11と発光素子12の間の領域が中空である場合、発光素子11、12の屈折率(例えば2.4)と空気の屈折率(1.0)が大きく、発光素子11、12と、この中空領域との界面で反射が起こりやすい。そこで、空気よりも屈折率が発光素子11、12に近い透明な樹脂21を発光素子11と発光素子12の間の領域に形成することにより、発光素子11、12から側方に発せられた光を取り出しやすくすることができる。   In addition, when the region between the light emitting element 11 and the light emitting element 12 is hollow, the light emitting elements 11 and 12 have a large refractive index (for example, 2.4) and air refractive index (1.0). Reflection is likely to occur at the interface between 12 and this hollow region. Therefore, by forming a transparent resin 21 having a refractive index closer to that of the light emitting elements 11 and 12 than that of air in a region between the light emitting elements 11 and 12, light emitted from the light emitting elements 11 and 12 to the side. Can be taken out easily.

また、樹脂21が白色の場合は、発光素子11、12から側方に発せられる光を反射するため、発光装置1の指向性を高めることができる。   Further, when the resin 21 is white, the light emitted from the light emitting elements 11 and 12 to the side is reflected, so that the directivity of the light emitting device 1 can be improved.

樹脂21は、上記の効果(保護、反射低減、指向性向上)をより高めるため、図5に示されるように、発光素子11と発光素子12との間の領域だけでなく、発光素子11と発光素子12の全ての側面を覆う様に、発光素子11と発光素子12の周囲にも形成されることが好ましい。   In order to enhance the above-described effects (protection, reflection reduction, and directivity improvement), the resin 21 not only includes the region between the light emitting element 11 and the light emitting element 12 but also the light emitting element 11 as shown in FIG. It is preferable that the light emitting element 11 is also formed around the light emitting element 12 so as to cover all side surfaces of the light emitting element 12.

また、樹脂21の上面が平滑化され、発光素子11、12の上面と同じ高さを有するため、樹脂21の凹凸に起因する蛍光体層22の傾きが抑えられている。このため、発光素子11、12から発せられた光の蛍光体層22中の光路差を小さくし、発光装置2の色むらを小さくすることができる。   In addition, since the upper surface of the resin 21 is smoothed and has the same height as the upper surfaces of the light emitting elements 11 and 12, the inclination of the phosphor layer 22 due to the unevenness of the resin 21 is suppressed. For this reason, the optical path difference in the fluorescent substance layer 22 of the light emitted from the light emitting elements 11 and 12 can be reduced, and the color unevenness of the light emitting device 2 can be reduced.

例えば、樹脂21の上面が発光素子11、12の上面よりも高い位置にある場合、蛍光体層22に傾きが生じ、光路差が大きくなるため、色むらが大きくなる。一方、樹脂21の上面が発光素子11、12の上面よりも低い位置にある場合は、上記の樹脂21による効果(保護、反射低減、指向性向上)が低下する。   For example, when the upper surface of the resin 21 is higher than the upper surfaces of the light emitting elements 11 and 12, the phosphor layer 22 is inclined and the optical path difference is increased, so that the color unevenness is increased. On the other hand, when the upper surface of the resin 21 is at a position lower than the upper surfaces of the light emitting elements 11 and 12, the effects (protection, reflection reduction, and improvement in directivity) of the resin 21 are reduced.

(発光装置の製造方法)
以下に、発光装置2の製造方法の一例について具体的に説明する。
(Method for manufacturing light emitting device)
Below, an example of the manufacturing method of the light-emitting device 2 is demonstrated concretely.

図6(a)〜(d)は、第2の実施の形態に係る発光装置2の製造工程の一例を示す垂直断面図である。   6A to 6D are vertical sectional views showing an example of a manufacturing process of the light emitting device 2 according to the second embodiment.

まず、図6(a)に示されるように、基板10上に搭載された、フェイスダウン型の発光素子11、12を用意する。   First, as shown in FIG. 6A, face-down light emitting elements 11 and 12 mounted on a substrate 10 are prepared.

次に、図6(b)に示されるように、発光素子11と発光素子12の間の領域を埋め、さらに発光素子11と発光素子12の上面を覆うように樹脂21を形成する。このとき、図6(b)に示されるように、樹脂21が発光素子11と発光素子12の周囲も覆うことが好ましい。   Next, as illustrated in FIG. 6B, a resin 21 is formed so as to fill a region between the light emitting element 11 and the light emitting element 12 and further cover the upper surfaces of the light emitting element 11 and the light emitting element 12. At this time, as shown in FIG. 6B, it is preferable that the resin 21 also covers the periphery of the light emitting element 11 and the light emitting element 12.

次に、図6(c)に示されるように、熱処理等によって樹脂21が硬化した後に、樹脂21の上面にCMP等の研磨処理を施し、その高さを発光素子11及び発光素子12の上面と揃え、かつ上面を平滑化する。このとき、発光素子11及び発光素子12はフェイスダウン型の発光素子であり、チップ基板11a、12aの上面がストッパーとして機能するため、樹脂21の研磨処理において発光素子11及び発光素子12がダメージを受けることはない。   Next, as shown in FIG. 6C, after the resin 21 is cured by heat treatment or the like, the upper surface of the resin 21 is subjected to polishing treatment such as CMP, and the height thereof is set to the upper surface of the light emitting element 11 and the light emitting element 12. And the top surface is smoothed. At this time, the light-emitting element 11 and the light-emitting element 12 are face-down light-emitting elements, and the upper surfaces of the chip substrates 11a and 12a function as stoppers. Therefore, the light-emitting element 11 and the light-emitting element 12 are damaged in the polishing process of the resin 21. I will not receive it.

次に、図6(d)に示されるように、蛍光体層22を発光素子11及び発光素子12の上に載せる。蛍光体層22と発光素子11及び発光素子12の上面(チップ基板11a、12aの上面)とは、シリコーン樹脂又はエポキシ樹脂等の熱硬化性樹脂等によって接着されることが好ましい。   Next, as shown in FIG. 6D, the phosphor layer 22 is placed on the light emitting element 11 and the light emitting element 12. It is preferable that the phosphor layer 22 and the upper surfaces of the light emitting element 11 and the light emitting element 12 (the upper surfaces of the chip substrates 11a and 12a) are bonded by a thermosetting resin such as a silicone resin or an epoxy resin.

〔第3の実施の形態〕
第3の実施の形態は、樹脂の形態において第2の実施の形態と異なる。なお、第2の実施の形態と同様の点については、説明を省略又は簡略化する。
[Third Embodiment]
The third embodiment is different from the second embodiment in the form of resin. Note that the description of the same points as in the second embodiment will be omitted or simplified.

(発光装置の構成)
図7は、第3の実施の形態に係る発光装置3の垂直断面図である。
(Configuration of light emitting device)
FIG. 7 is a vertical sectional view of the light emitting device 3 according to the third embodiment.

発光装置3は、基板10と、基板10上に搭載されたフェイスダウン型の発光素子11及び発光素子12と、発光素子11と発光素子12との間の領域に埋め込まれた樹脂31と、発光素子11、12、及び樹脂31の上面を覆う連続した蛍光体層22と、発光素子11の側面のうちの発光素子12に対向していない側面及び発光素子12の側面のうちの発光素子11に対向していない側面を覆う樹脂32と、を有する。   The light-emitting device 3 includes a substrate 10, face-down light-emitting elements 11 and 12 mounted on the substrate 10, a resin 31 embedded in a region between the light-emitting elements 11 and 12, and light emission The continuous phosphor layer 22 covering the top surfaces of the elements 11, 12 and the resin 31, the side surface of the light emitting element 11 that does not face the light emitting element 12, and the light emitting element 11 of the side surface of the light emitting element 12 And a resin 32 that covers the side surfaces that are not facing each other.

樹脂31は、透明なシリコーン系樹脂やエポキシ系樹脂等の熱硬化性樹脂である。また、樹脂32は、白色のシリコーン系樹脂やエポキシ系樹脂等の熱硬化性樹脂である。発光装置3においては、白色の樹脂32により指向性を向上させ、また、透明な樹脂31により光の吸収を抑えて光取出効率を向上させることができる。   The resin 31 is a thermosetting resin such as a transparent silicone resin or epoxy resin. The resin 32 is a thermosetting resin such as a white silicone resin or an epoxy resin. In the light emitting device 3, the directivity can be improved by the white resin 32, and the light extraction efficiency can be improved by suppressing the light absorption by the transparent resin 31.

また、樹脂31及び樹脂32の上面は研磨処理により平滑化されており、発光素子11、12の上面(チップ基板11a、12aの上面)と同じ高さに位置する。   Further, the upper surfaces of the resin 31 and the resin 32 are smoothed by a polishing process, and are positioned at the same height as the upper surfaces of the light emitting elements 11 and 12 (the upper surfaces of the chip substrates 11a and 12a).

蛍光体層22は、板状の蛍光体含有部材又は蛍光体、例えば、蛍光体粒子が分散した板状の樹脂等の透明部材、板状の蛍光体の焼結体、板状の単結晶蛍光体からなる。蛍光体層22に含まれる、又は蛍光体層22を構成する蛍光体の蛍光色は特に限定されない。   The phosphor layer 22 is a plate-like phosphor-containing member or phosphor, for example, a transparent member such as a plate-like resin in which phosphor particles are dispersed, a plate-like phosphor sintered body, and a plate-like single crystal fluorescence. Consists of the body. The fluorescent color of the phosphor contained in the phosphor layer 22 or constituting the phosphor layer 22 is not particularly limited.

樹脂31及び樹脂32の上面が平滑化され、発光素子11、12の上面と同じ高さを有するため、蛍光体層22の傾きに起因する色むらや、樹脂31及び樹脂32による効果(保護、反射低減、指向性向上)の低下が抑えられている。   Since the upper surfaces of the resin 31 and the resin 32 are smoothed and have the same height as the upper surfaces of the light-emitting elements 11 and 12, color unevenness caused by the inclination of the phosphor layer 22 and the effects (protection, Reduction in reflection and improvement in directivity is suppressed.

(発光装置の製造方法)
以下に、発光装置3の製造方法の一例について具体的に説明する。
(Method for manufacturing light emitting device)
Below, an example of the manufacturing method of the light-emitting device 3 is demonstrated concretely.

図8(a)〜(d)は、第3の実施の形態に係る発光装置3の製造工程の一例を示す垂直断面図である。   8A to 8D are vertical sectional views showing an example of the manufacturing process of the light emitting device 3 according to the third embodiment.

まず、図8(a)に示されるように、第1の実施の形態の図3(a)〜(b)に示される工程と同様の工程を経て、発光素子11と発光素子12の間の領域に、発光素子11及び発光素子12の上面(チップ基板11a、12aの上面)よりも高い位置まで樹脂31を埋め込む。   First, as shown in FIG. 8A, a process similar to the process shown in FIGS. 3A to 3B of the first embodiment is performed, and then between the light emitting element 11 and the light emitting element 12 is performed. In the region, the resin 31 is embedded up to a position higher than the upper surfaces of the light emitting elements 11 and 12 (the upper surfaces of the chip substrates 11a and 12a).

次に、図8(b)に示されるように、発光素子11、12、及び樹脂31の上面、並びに発光素子11の側面のうちの発光素子12に対向していない側面及び発光素子12の側面のうちの発光素子11に対向していない側面を覆うように樹脂32を塗布し、硬化させる。   Next, as shown in FIG. 8B, the upper surfaces of the light emitting elements 11, 12 and the resin 31, the side surface of the light emitting element 11 that does not face the light emitting element 12, and the side surface of the light emitting element 12. A resin 32 is applied and cured so as to cover a side surface not facing the light emitting element 11.

次に、図8(c)に示されるように、樹脂32及び樹脂31の上面にCMP等の研磨処理を施し、それらの高さを発光素子11及び発光素子12の上面と揃え、かつ上面を平滑化する。   Next, as shown in FIG. 8C, the upper surfaces of the resin 32 and the resin 31 are subjected to a polishing process such as CMP, and their heights are aligned with the upper surfaces of the light-emitting element 11 and the light-emitting element 12. Smooth.

次に、図8(d)に示されるように、蛍光体層22を発光素子11及び発光素子12の上に載せる。   Next, as shown in FIG. 8D, the phosphor layer 22 is placed on the light emitting element 11 and the light emitting element 12.

(実施の形態の効果)
上記第1〜第3の実施の形態によれば、蛍光体層内の光路差を小さくし、発光装置の色むらを低減することができる。
(Effect of embodiment)
According to the first to third embodiments, the optical path difference in the phosphor layer can be reduced, and the color unevenness of the light emitting device can be reduced.

以上、本発明の実施の形態を説明したが、本発明は、上記の実施の形態に限定されず、発明の主旨を逸脱しない範囲内において種々変形実施が可能である。   Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the invention.

例えば、上記第1〜第3の実施の形態においては、2つの発光素子が発光装置に含まれているが、3つ以上の発光素子が含まれていてもよい。この場合、発光素子の間の領域は複数存在し、それらの領域の各々に上面が平滑化された樹脂が形成される。   For example, in the first to third embodiments, two light emitting elements are included in the light emitting device, but three or more light emitting elements may be included. In this case, there are a plurality of regions between the light emitting elements, and a resin whose upper surface is smoothed is formed in each of these regions.

また、上記の実施の形態は特許請求の範囲に係る発明を限定するものではない。また、実施の形態の中で説明した特徴の組合せの全てが発明の課題を解決するための手段に必須であるとは限らない点に留意すべきである。   Moreover, said embodiment does not limit the invention which concerns on a claim. In addition, it should be noted that not all the combinations of features described in the embodiments are essential to the means for solving the problems of the invention.

1、2、3 発光装置
10 基板
11、12 発光素子
13、21、31、32 樹脂
14、22 蛍光体層
1, 2, 3 Light emitting device 10 Substrate 11, 12 Light emitting element 13, 21, 31, 32 Resin 14, 22 Phosphor layer

Claims (4)

基板上に搭載された、フェイスダウン型の2つの発光素子を用意する工程と、
前記2つの発光素子の間の領域に、前記2つの発光素子の上面よりも高い位置まで樹脂を埋め込む工程と、
前記樹脂が硬化した後、前記樹脂の上面に研磨処理を施し、その高さを前記2つの発光素子と揃え、かつ前記上面を平滑化する工程と、
前記研磨処理の後、前記2つの発光素子及び前記樹脂の上面を覆う連続した蛍光体層を形成する工程と、
を含む、発光装置の製造方法。
A step of preparing two face-down light emitting elements mounted on a substrate;
Embedding a resin in a region between the two light emitting elements to a position higher than the upper surface of the two light emitting elements;
After the resin is cured, a process of polishing the upper surface of the resin, aligning its height with the two light emitting elements, and smoothing the upper surface;
A step of forming a continuous phosphor layer covering the top surfaces of the two light emitting elements and the resin after the polishing treatment;
A method for manufacturing a light emitting device, comprising:
蛍光体粒子が分散した樹脂を前記2つの発光素子及び前記樹脂の上面に塗布し、硬化させることにより、前記蛍光体層を形成する、
請求項1に記載の発光装置の製造方法。
The phosphor layer is formed by applying and curing a resin in which phosphor particles are dispersed on the top surfaces of the two light emitting elements and the resin.
The manufacturing method of the light-emitting device of Claim 1.
板状の蛍光体含有部材又は蛍光体を前記2つの発光素子及び前記樹脂の上に載せることにより、前記蛍光体層を形成する、
請求項1に記載の発光装置の製造方法。
The phosphor layer is formed by placing a plate-like phosphor-containing member or phosphor on the two light-emitting elements and the resin.
The manufacturing method of the light-emitting device of Claim 1.
前記樹脂が、透明又は白色の樹脂である、
請求項1〜3のいずれか1項に記載の発光装置の製造方法。
The resin is a transparent or white resin,
The manufacturing method of the light-emitting device of any one of Claims 1-3.
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