WO2017110031A1 - 発光素子および照明装置 - Google Patents

発光素子および照明装置 Download PDF

Info

Publication number
WO2017110031A1
WO2017110031A1 PCT/JP2016/004853 JP2016004853W WO2017110031A1 WO 2017110031 A1 WO2017110031 A1 WO 2017110031A1 JP 2016004853 W JP2016004853 W JP 2016004853W WO 2017110031 A1 WO2017110031 A1 WO 2017110031A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
phosphor
substrate
light
emitting element
Prior art date
Application number
PCT/JP2016/004853
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
孝典 明田
展幸 宮川
浩則 上
斉藤　誠
利彦 佐藤
Original Assignee
パナソニックＩｐマネジメント株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パナソニックＩｐマネジメント株式会社 filed Critical パナソニックＩｐマネジメント株式会社
Priority to US16/063,765 priority Critical patent/US20200271282A1/en
Priority to EP16877936.1A priority patent/EP3396232B1/de
Priority to JP2017557682A priority patent/JP6493713B2/ja
Publication of WO2017110031A1 publication Critical patent/WO2017110031A1/ja

Links

Images

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/0236—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
    • G02B5/0242—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element by means of dispersed particles
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/12—Combinations of only three kinds of elements
    • F21V13/14—Combinations of only three kinds of elements the elements being filters or photoluminescent elements, reflectors and refractors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0273—Diffusing elements; Afocal elements characterized by the use
    • G02B5/0284—Diffusing elements; Afocal elements characterized by the use used in reflection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0808—Mirrors having a single reflecting layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H05B33/24—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers of metallic reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to a light emitting element in which a phosphor layer is laminated on a substrate and an illumination device including the light emitting element.
  • a phosphor layer is irradiated with a laser beam transmitted by a light guide member as excitation light to a light emitting element in which a phosphor layer is laminated on a substrate, so that the phosphor layer emits light and is converted into a desired light color.
  • a light guide member as excitation light
  • a light emitting element in which a phosphor layer is laminated on a substrate
  • the phosphor layer emits light and is converted into a desired light color.
  • an illuminating device that illuminates (see Patent Document 1, for example).
  • an object of the present invention is to increase the heat radiation efficiency in the light emitting element.
  • a light-emitting element includes a phosphor layer including at least one kind of phosphor and a substrate having higher thermal conductivity than the phosphor layer, and the phosphor layer is disposed on one main surface side. And a bonding portion for metal bonding between the phosphor layer and the substrate interposed between the phosphor layer and the substrate, and the phosphor layer between the bonding portion and the phosphor layer.
  • a translucent adhesion layer laminated on the main surface on the substrate side in the substrate and a reflective layer laminated on the main surface on the substrate side in the adhesion layer are interposed.
  • the heat dissipation efficiency of the light emitting element can be increased.
  • FIG. 1 is a schematic diagram illustrating a schematic configuration of a lighting apparatus according to an embodiment.
  • FIG. 2 is a cross-sectional view illustrating a schematic configuration of the light-emitting element according to the embodiment.
  • FIG. 3 is a cross-sectional view illustrating a state before assembly of the light-emitting element according to the embodiment.
  • FIG. 4 is a cross-sectional view illustrating a schematic configuration of a light emitting device according to Modification 1.
  • FIG. 5 is a cross-sectional view illustrating a schematic configuration of a light-emitting element according to Modification 2.
  • FIG. 6 is a cross-sectional view illustrating a schematic configuration of a light emitting device according to Modification 3.
  • FIG. 1 is a schematic diagram illustrating a schematic configuration of a lighting apparatus according to an embodiment.
  • FIG. 2 is a cross-sectional view illustrating a schematic configuration of the light-emitting element according to the embodiment.
  • FIG. 3 is a cross-sectional
  • FIG. 7 is a cross-sectional view illustrating a schematic configuration of a light-emitting element according to Modification 4.
  • FIG. 8 is a cross-sectional view illustrating a schematic configuration of a light-emitting element according to Modification 5.
  • FIG. 9 is a cross-sectional view illustrating a schematic configuration of a light-emitting element according to Modification 6.
  • FIG. 1 is a schematic diagram illustrating a schematic configuration of a lighting apparatus according to an embodiment.
  • the lighting device 1 includes a light source unit 2, a light guide member 3, and a light emitting element 4.
  • the light source unit 2 is a device that generates laser light and supplies the laser light to the light emitting element 4 via a light guide member 3 such as an optical fiber.
  • the light source unit 2 is a semiconductor laser element that emits laser light having a wavelength of bluish purple to blue (430 to 490 nm).
  • the light emitting element 4 is a light emitting element that emits white light to the surface side using the laser light transmitted from the light guide member 3 and irradiated from the surface side as excitation light.
  • FIG. 2 is a cross-sectional view showing a schematic configuration of the light-emitting element 4 according to the embodiment.
  • the light-emitting element 4 includes a substrate 41, a bonding portion 42, a reflective layer 43, an adhesion layer 44, and a phosphor layer 45.
  • the substrate 41 is a substrate whose planar view shape is, for example, a rectangular shape or a circular shape.
  • the substrate 41 is a substrate having higher thermal conductivity than the phosphor layer 45. Thereby, the heat conducted from the phosphor layer 45 can be efficiently radiated from the substrate 41.
  • the substrate 41 is made of a metal material such as Cu or Al.
  • the substrate 41 may be made of a material other than a metal material as long as it has a higher thermal conductivity than the phosphor layer 45. Examples of the material other than the metal material include glass and sapphire.
  • a heat sink such as a mirror surface heat sink may be in contact with and attached to the substrate 41 in order to further improve heat dissipation.
  • the phosphor layer 45 is disposed on one main surface 411 side of the substrate 41 with the joint portion 42, the reflective layer 43, and the adhesion layer 44 interposed therebetween.
  • the phosphor layer 45 is formed in the same shape as the substrate 41 in plan view.
  • the phosphor layer 45 includes, for example, phosphor particles (phosphor particles 451) that are excited by laser light to emit fluorescence in a dispersed state, and the phosphor particles 451 emit fluorescence when irradiated with laser light. . For this reason, the outer main surface of the phosphor layer 45 becomes a light emitting surface.
  • the phosphor layer 45 emits white light, and a first phosphor that emits red light when irradiated with laser light, a second phosphor that emits blue light, and a third phosphor that emits green light.
  • a first phosphor that emits red light when irradiated with laser light a second phosphor that emits blue light
  • a third phosphor that emits green light a third phosphor that emits green light.
  • Three types of phosphor particles of the phosphor are included at an appropriate ratio.
  • the type and characteristics of the phosphor are not particularly limited. However, since a relatively high output laser beam serves as excitation light, it is desirable that the phosphor has high heat resistance.
  • the type of the substrate that holds the phosphor in a dispersed state is not particularly limited, but the substrate should be highly transparent with respect to the wavelength of the excitation light and the wavelength of the light emitted from the phosphor. desirable.
  • the base material which consists of glass or ceramics is mentioned.
  • the phosphor layer 45 may be a polycrystal or a single crystal made of one kind of phosphor.
  • the adhesion layer 44 is laminated on the main surface 452 of the phosphor layer 45 on the substrate 41 side.
  • the adhesion layer 44 is formed from a light-transmitting compound and is in close contact with the phosphor layer 45 and the reflection layer 43.
  • the adhesion layer 44 is formed by depositing a compound on the main surface 452 of the phosphor layer 45 by a known film forming method such as sputtering or plating.
  • examples of the compound forming the adhesion layer 44 include oxides, halides, nitrides, and fluorides.
  • the oxide include metal oxides such as ITO, IZO, and Al 2 O 3 .
  • the reflective layer 43 is laminated on the main surface 441 of the adhesion layer 44 on the substrate 41 side.
  • the reflection layer 43 reflects the laser light and the light emitted from the phosphor particles 451.
  • the reflective layer 43 is formed of a material having a high reflectance with respect to the laser light and the light emitted from the phosphor particles 451.
  • the material having high reflectivity is a metal material such as Ag or Al.
  • the reflective layer 43 is formed by forming a metal material on the main surface 441 of the adhesion layer 44 by a known film forming method such as sputtering or plating. Further, for example, an increased reflection film such as a dielectric multilayer film may be formed on the layer formed of these metal materials.
  • the bonding portion 42 includes a first electrode layer 421, a second electrode layer 422, and a metal bonding layer 423.
  • the first electrode layer 421 is laminated on the main surface 411 of the substrate 41 on the phosphor layer 45 side.
  • the first electrode layer 421 is made of a metal material such as Au, Ag, Ni, Pd, Ti, for example.
  • the first electrode layer 421 is formed by forming a metal material on the main surface 411 of the substrate 41 by a known film forming method such as sputtering or plating.
  • the second electrode layer 422 is laminated on the main surface 431 of the reflective layer 43 on the substrate 41 side.
  • the second electrode layer 422 is made of a metal material such as Au, Ag, Ni, Pd, Ti, for example.
  • the second electrode layer 422 is formed by forming a metal material on the main surface 431 of the reflective layer 43 by a film forming method such as sputtering or plating.
  • the metal bonding layer 423 is laminated on the main surface 4211 on the phosphor layer 45 side in the first electrode layer 421 and the main surface 4221 on the substrate 41 side in the second electrode layer 422.
  • the metal bonding layer 423 is formed of a metal material capable of metal bonding. Examples of metal materials that can be metal-bonded include AuSn-based, AuGe-based, and SnAgCu-based solder materials.
  • FIG. 3 is a cross-sectional view showing a state before assembly of the light-emitting element 4 according to the embodiment.
  • the first electrode layer 421 is integrated with the substrate 41 in advance, and the adhesion layer 44, the reflective layer 43, the first layer with respect to the phosphor layer 45.
  • the two-electrode layer 422 and the solder material 423a are integrated in advance.
  • the solder material 423a is melted by heating, and the first electrode layer 421 and the second electrode layer 422 are metal-bonded.
  • the solder material is interposed between the first electrode layer 421 and the second electrode layer 422, thereby forming the metal bonding layer 423 that bonds the first electrode layer 421 and the second electrode layer 422.
  • solder material 423a may be integrated with the second electrode layer 422 in advance before the light-emitting element 4 is assembled. Further, the solder material 423a may be a separate body from the first electrode layer 421 and the second electrode layer 422, and may be attached to the first electrode layer 421 and the second electrode layer 422 at the time of assembly.
  • the phosphor particles 451 generate heat, but the heat is transferred to the substrate through the adhesion layer 44, the reflective layer 43, the second electrode layer 422, the metal bonding layer 423, and the first electrode layer 421. Heat is transmitted to 41.
  • the illumination device 1 includes the light emitting element 4 and the light source unit 2 that emits excitation light for exciting the phosphor particles 451 of the light emitting element 4.
  • the light emitting element 4 has a phosphor layer 45 including at least one kind of phosphor particles 451 and a higher thermal conductivity than the phosphor layer 45, and the phosphor layer 45 is disposed on one main surface 411 side.
  • a substrate 41 and a bonding portion 42 interposed between the phosphor layer 45 and the substrate 41 for metal bonding of the phosphor layer 45 and the substrate 41 are provided.
  • the resin becomes a thermal barrier and the heat dissipation efficiency is lowered.
  • the substrate 41 having a higher thermal conductivity than the phosphor layer 45 and the phosphor layer 45 are metal-bonded by the joint portion 42, the phosphor layer 45 smoothly transfers to the substrate 41. It can heat and can improve heat dissipation efficiency.
  • the reflection layer 43 is laminated
  • a minute gap may be formed between the reflective layer 43 and the phosphor layer 45. If there is such a minute gap, the heat transfer from the phosphor layer 45 to the substrate 41 is weakened. However, since the phosphor layer 45 and the reflective layer 43 are in close contact with the adhesive layer 44, it is possible to suppress a decrease in heat transfer due to the gap. Therefore, heat dissipation efficiency can be increased.
  • each of the first electrode layer 421, the adhesion layer 44, the reflective layer 43, the second electrode layer 422, and the metal bonding layer 423 has a higher thermal conductivity than the phosphor layer 45. May be formed.
  • the bonding portion 42 includes a first electrode layer 421 stacked on the main surface 411 of the substrate 41, a second electrode layer 422 stacked on the main surface 431 of the reflective layer 43 on the substrate 41 side, and a first electrode layer. And a metal bonding layer 423 that is interposed between the first electrode layer 421 and the second electrode layer 422 and is interposed between the first electrode layer 422 and the second electrode layer 422.
  • the metal bonding layer 423 is sandwiched between the first electrode layer 421 and the second electrode layer 422, by applying a current to the first electrode layer 421 and the second electrode layer 422 at the time of manufacture, Metal bonding by the metal bonding layer 423 can be easily realized.
  • the adhesion layer 44 is formed of a metal oxide.
  • the adhesion layer 44 is formed of a metal oxide, the adhesion to both the phosphor layer 45 and the reflection layer 43 can be enhanced.
  • FIG. 4 is a cross-sectional view showing a schematic configuration of a light emitting element 4A according to Modification 1, and specifically corresponds to FIG.
  • the same parts as those of the light-emitting element 4 according to the embodiment are denoted by the same reference numerals, the description thereof is omitted, and only different parts are described.
  • the case where the phosphor particles 451 are dispersed almost uniformly throughout the phosphor layer 45 has been described as an example.
  • the light emitting element 4A in which the phosphor particles 451 are arranged on the substrate 41 side in the phosphor layer 45a will be described.
  • the phosphor layer 45a has a two-layer structure.
  • a second layer 454 is formed by stacking 455. The second layer 454 is disposed on the substrate 41 side, and the first layer 453 is disposed on the side opposite to the substrate 41, whereby the phosphor particles 451 are disposed on the substrate 41 side in the phosphor layer 45a.
  • the phosphor particles 451 are arranged so as to be biased toward the substrate 41 in the phosphor layer 45a, the interval between any of the phosphor particles 451 and the substrate 41 can be reduced. For this reason, heat can be efficiently transferred to the substrate 41 side.
  • the second layer 454 containing the phosphor particles 451 can be protected by the first layer 453.
  • the phosphor particles are aggregated on one main surface side of the phosphor layer so that the main surface is on the substrate 41 side. You may arrange.
  • FIG. 5 is a cross-sectional view showing a schematic configuration of a light-emitting element 4B according to Modification Example 2, and specifically corresponds to FIG.
  • the bonding portion 42 includes the first electrode layer 421, the second electrode layer 422, and the metal bonding layer 423 has been described as an example.
  • a light-emitting element 4B in which the joint portion 42b is formed from sintered silver nanoparticles will be described.
  • the joint portion 42 b is interposed between the adhesion layer 44 and the substrate 41.
  • the bonding portion 42b is formed by sintering silver nanoparticles, metal bonding can be performed without the first electrode layer 421 and the second electrode layer 422.
  • the reflectance is raised by sintering silver nanoparticle, it can function also as a reflection layer. That is, the reflective layer 43 in the light emitting element 4 according to the embodiment can be omitted, so that the manufacturing efficiency can be increased.
  • FIG. 6 is a cross-sectional view showing a schematic configuration of a light emitting element 4C according to Modification 3, and specifically corresponds to FIG.
  • the through-hole 5 continuous in the normal direction of the main surface 411 of the substrate 41 is formed in the substrate 41, the bonding portion 42, the reflective layer 43, and the adhesion layer 44. Is formed.
  • the through-hole 5 can be used as an optical path of excitation light (laser light) incident from the substrate 41 side. Thereby, white light can be emitted in the traveling direction of the excitation light.
  • the light source part 2 and the light guide member 3 can be arrange
  • the through-hole 5 is continuous in the normal direction of the main surface 411 of the substrate 41 in the third modification.
  • the through-hole 5 is formed in any direction as long as the direction intersects the main surface 411. May be continuous.
  • FIG. 7 is a cross-sectional view showing a schematic configuration of a light-emitting element 4D according to Modification Example 4, and specifically corresponds to FIG.
  • the light emitting element 4D according to the modification 4 is different from the light emitting element 4 according to the above embodiment in that the light emitting element 4D includes the diffusion layer 46.
  • a diffusion layer 46 that diffuses light is interposed between the phosphor layer 45 and the adhesion layer 44 in the light emitting element 4 ⁇ / b> D.
  • the diffusion layer 46 diffuses the laser light that is excitation light and the fluorescence emitted by the phosphor particles 451.
  • the diffusion layer 46 is formed, for example, by dispersing diffusion particles such as silica-based particles or titanium-based particles in an inorganic sealing material such as glass.
  • the diffusion layer 46 is interposed between the phosphor layer 45 and the reflection layer 43, the laser light and the fluorescence can be diffused by the diffusion layer 46 and mixed. Therefore, uniform white light can be realized.
  • the diffusion layer 46 is interposed between the phosphor layer 45 and the adhesion layer 44 has been described as an example.
  • the diffusion layer 46 only needs to be interposed between the phosphor layer 45 and the reflection layer 43. That is, the diffusion layer 46 may be interposed between the adhesion layer 44 and the reflection layer 43.
  • FIG. 8 is a cross-sectional view showing a schematic configuration of a light-emitting element 4E according to Modification Example 5, and specifically corresponds to FIG.
  • the light emitting element 4E according to the modified example 5 is different from the light emitting element 4 according to the above-described embodiment in that the surface of the phosphor layer 45e has an uneven pattern 455. Specifically, as shown in FIG. 8, an uneven pattern in which fine unevenness 454 is repeated in a region R1 irradiated with laser light on a surface 453 of the phosphor layer 45e opposite to the substrate 41. 455 is formed.
  • the concavo-convex pattern 455 is formed by, for example, nanoimprint technology or blasting.
  • the surface roughness due to the uneven pattern 455 may be a surface roughness equal to or greater than the wavelength of the laser beam.
  • the uneven pattern 455 is formed only in the region R1 in the surface 453 of the phosphor layer 45e is illustrated, but the uneven pattern 455 only needs to be formed in at least the region R1. . That is, the uneven pattern 455 may be formed on the entire surface 453 of the phosphor layer 45e.
  • FIG. 9 is a cross-sectional view showing a schematic configuration of a light-emitting element 4F according to Modification Example 6, and specifically corresponds to FIG.
  • the light emitting element 4F according to the modified example 6 is different from the light emitting element 4 according to the above-described embodiment in that the main surface 452f of the phosphor layer 45f has an uneven pattern 459.
  • a concavo-convex pattern 459 in which fine concavo-convex 458 is repeated is provided in a region R2 irradiated with laser light. Is formed.
  • the uneven pattern 459 is formed by, for example, nanoimprint technology or blasting.
  • the surface roughness due to the uneven pattern 459 may be a surface roughness equal to or greater than the wavelength of the laser beam.
  • the concave / convex pattern 459 is formed only in the region R2 of the main surface 452f of the phosphor layer 45f is illustrated, but the concave / convex pattern 459 is at least formed in the region R2. Good. That is, the uneven pattern 459 may be formed on the entire main surface 452f of the phosphor layer 45f.
  • the light emitting element 4 is applied to the lighting device 1 as an example, but the light emitting element 4 can also be used for other illumination systems.
  • Examples of other illumination systems include a projector and an in-vehicle headlight.
  • the light emitting element 4 is used as a phosphor wheel.
  • a reflection suppressing layer such as an AR coating layer may be laminated on the surface of the phosphor layer 45 opposite to the main surface 452, that is, the light emitting surface. Thereby, the light extraction efficiency can be increased.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)
PCT/JP2016/004853 2015-12-24 2016-11-10 発光素子および照明装置 WO2017110031A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US16/063,765 US20200271282A1 (en) 2015-12-24 2016-11-10 Light-emitting element and illumination device
EP16877936.1A EP3396232B1 (de) 2015-12-24 2016-11-10 Lichtemittierendes element und beleuchtungsvorrichtung
JP2017557682A JP6493713B2 (ja) 2015-12-24 2016-11-10 発光素子および照明装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015251803 2015-12-24
JP2015-251803 2015-12-24

Publications (1)

Publication Number Publication Date
WO2017110031A1 true WO2017110031A1 (ja) 2017-06-29

Family

ID=59089928

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/004853 WO2017110031A1 (ja) 2015-12-24 2016-11-10 発光素子および照明装置

Country Status (4)

Country Link
US (1) US20200271282A1 (de)
EP (1) EP3396232B1 (de)
JP (1) JP6493713B2 (de)
WO (1) WO2017110031A1 (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019021782A1 (ja) * 2017-07-25 2019-01-31 日本電気硝子株式会社 波長変換部材
WO2019159441A1 (ja) 2018-02-14 2019-08-22 日本特殊陶業株式会社 光波長変換装置
WO2020044426A1 (ja) * 2018-08-28 2020-03-05 日本碍子株式会社 蛍光体素子および照明装置
WO2020083717A1 (en) * 2018-10-22 2020-04-30 Lumileds Holding B.V. A method of manufacturing a light converting device
CN113970872A (zh) * 2020-07-24 2022-01-25 中强光电股份有限公司 波长转换元件及投影机

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017101729A1 (de) * 2017-01-30 2018-08-02 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
WO2021186895A1 (ja) * 2020-03-18 2021-09-23 シャープ株式会社 波長変換素子及び光学機器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012026206A1 (ja) * 2010-08-26 2012-03-01 日本電気硝子株式会社 波長変換素子、光源及び液晶用バックライトユニット
JP2012243624A (ja) * 2011-05-20 2012-12-10 Stanley Electric Co Ltd 光源装置および照明装置
JP2014116081A (ja) * 2012-12-06 2014-06-26 Stanley Electric Co Ltd 発光装置及び車両用灯具
WO2014123145A1 (ja) * 2013-02-08 2014-08-14 ウシオ電機株式会社 蛍光光源装置
WO2014174618A1 (ja) * 2013-04-24 2014-10-30 日立マクセル株式会社 光源装置および車両用灯具
JP2015087423A (ja) * 2013-10-28 2015-05-07 セイコーエプソン株式会社 発光素子、照明装置およびプロジェクター

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012243701A (ja) * 2011-05-24 2012-12-10 Stanley Electric Co Ltd 光源装置および照明装置
JP6722909B2 (ja) * 2016-08-30 2020-07-15 パナソニックＩｐマネジメント株式会社 色変換素子及び照明装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012026206A1 (ja) * 2010-08-26 2012-03-01 日本電気硝子株式会社 波長変換素子、光源及び液晶用バックライトユニット
JP2012243624A (ja) * 2011-05-20 2012-12-10 Stanley Electric Co Ltd 光源装置および照明装置
JP2014116081A (ja) * 2012-12-06 2014-06-26 Stanley Electric Co Ltd 発光装置及び車両用灯具
WO2014123145A1 (ja) * 2013-02-08 2014-08-14 ウシオ電機株式会社 蛍光光源装置
WO2014174618A1 (ja) * 2013-04-24 2014-10-30 日立マクセル株式会社 光源装置および車両用灯具
JP2015087423A (ja) * 2013-10-28 2015-05-07 セイコーエプソン株式会社 発光素子、照明装置およびプロジェクター

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3396232A4 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019021782A1 (ja) * 2017-07-25 2019-01-31 日本電気硝子株式会社 波長変換部材
WO2019159441A1 (ja) 2018-02-14 2019-08-22 日本特殊陶業株式会社 光波長変換装置
KR20200106527A (ko) 2018-02-14 2020-09-14 니뽄 도쿠슈 도교 가부시키가이샤 광 파장 변환 장치
US11287107B2 (en) 2018-02-14 2022-03-29 Ngk Spark Plug Co., Ltd. Optical wavelength conversion device
WO2020044426A1 (ja) * 2018-08-28 2020-03-05 日本碍子株式会社 蛍光体素子および照明装置
JPWO2020044426A1 (ja) * 2018-08-28 2021-09-24 日本碍子株式会社 蛍光体素子および照明装置
JP7086199B2 (ja) 2018-08-28 2022-06-17 日本碍子株式会社 蛍光体素子および照明装置
WO2020083717A1 (en) * 2018-10-22 2020-04-30 Lumileds Holding B.V. A method of manufacturing a light converting device
CN113970872A (zh) * 2020-07-24 2022-01-25 中强光电股份有限公司 波长转换元件及投影机
US11947250B2 (en) 2020-07-24 2024-04-02 Coretronic Corporation Wavelength conversion element with heat conductive layer and projector

Also Published As

Publication number Publication date
JPWO2017110031A1 (ja) 2018-06-21
EP3396232B1 (de) 2020-06-17
EP3396232A4 (de) 2018-12-26
JP6493713B2 (ja) 2019-04-03
EP3396232A1 (de) 2018-10-31
US20200271282A1 (en) 2020-08-27

Similar Documents

Publication Publication Date Title
JP6493713B2 (ja) 発光素子および照明装置
JP6317373B2 (ja) 波長変換装置、発光装置及び投影システム
JP6221950B2 (ja) 発光デバイス
JP6371201B2 (ja) 発光モジュール及びそれを用いた発光装置
CN110737085B (zh) 波长转换装置
WO2014122888A1 (ja) 発光モジュール
JP2008530793A (ja) 無機発光ダイオードを有する発光装置
JP2016058624A (ja) 発光装置
JP2009099715A (ja) 発光装置
JP2014137973A (ja) 光源装置
JPWO2010082286A1 (ja) 発光モジュールおよび灯具ユニット
WO2018042825A1 (ja) 色変換素子
JP2016058619A (ja) 発光装置
JP2014127513A (ja) 発光装置
TW201542964A (zh) 光轉換基板及發光封裝及包括其之汽車燈
JP2019145690A (ja) 発光装置及び発光装置の製造方法
WO2018179688A1 (ja) 色変換素子および照明装置
JP6741982B2 (ja) 発光素子および照明装置
CN113701125A (zh) 透射式波长转换装置及其发光装置
TWI739506B (zh) 焊接用波長轉換構件、波長轉換裝置及光源裝置
US10781987B2 (en) Light converting device
WO2020044870A1 (ja) 色変換素子
TW202002337A (zh) 顏色轉換元件及照明裝置
CN113551203A (zh) 透射式波长转换装置及其发光装置
CN113272687A (zh) 颜色转换元件

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16877936

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2017557682

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2016877936

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2016877936

Country of ref document: EP

Effective date: 20180724