WO2017104514A1 - 支持結晶化ガラス基板及びこれを用いた積層体 - Google Patents

支持結晶化ガラス基板及びこれを用いた積層体 Download PDF

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Publication number
WO2017104514A1
WO2017104514A1 PCT/JP2016/086428 JP2016086428W WO2017104514A1 WO 2017104514 A1 WO2017104514 A1 WO 2017104514A1 JP 2016086428 W JP2016086428 W JP 2016086428W WO 2017104514 A1 WO2017104514 A1 WO 2017104514A1
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Prior art keywords
crystallized glass
glass substrate
substrate
support
semiconductor package
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PCT/JP2016/086428
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English (en)
French (fr)
Japanese (ja)
Inventor
鈴木　良太
哲哉 村田
美紅 藤井
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日本電気硝子株式会社
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Application filed by 日本電気硝子株式会社 filed Critical 日本電気硝子株式会社
Priority to CN201680068744.4A priority Critical patent/CN108290774A/zh
Priority to JP2017556001A priority patent/JP6866850B2/ja
Priority to KR1020187014642A priority patent/KR102584795B1/ko
Priority to KR1020237032812A priority patent/KR20230141936A/ko
Publication of WO2017104514A1 publication Critical patent/WO2017104514A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages

Definitions

  • the present invention relates to a support crystallized glass substrate and a laminate using the same, and specifically to a support crystallized glass substrate used for supporting a processed substrate in a semiconductor package manufacturing process and a laminate using the support crystallized glass substrate.
  • Portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter.
  • the mounting space of semiconductor chips used in these electronic devices is also strictly limited, and high-density mounting of semiconductor chips has become a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor chips and interconnecting the semiconductor chips.
  • a conventional wafer level package is manufactured by forming bumps in a wafer state and then separating them by dicing.
  • the semiconductor chip is likely to be chipped.
  • the fan-out type WLP can increase the number of pins, and can prevent chipping of the semiconductor chip by protecting the end portion of the semiconductor chip.
  • the fan-out type WLP includes a step of forming a processed substrate by molding a plurality of semiconductor chips with a resin sealing material and then wiring to one surface of the processed substrate, a step of forming a solder bump, and the like.
  • the sealing material may be deformed and the processed substrate may change in dimensions.
  • the dimension of the processed substrate changes, it becomes difficult to perform wiring with high density on one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.
  • the glass substrate is easy to smooth the surface and has rigidity. Therefore, when a glass substrate is used as the support substrate, the processed substrate can be supported firmly and accurately. In addition, the glass substrate easily transmits light such as ultraviolet light and infrared light. Therefore, when a glass substrate is used as the support substrate, the processed substrate and the glass substrate can be easily fixed by providing an adhesive layer or the like with an ultraviolet curable adhesive or the like. Furthermore, if a release layer or the like that absorbs infrared rays is provided, the processed substrate and the glass substrate can be easily separated. As another method, when an adhesive layer or the like is provided by an ultraviolet curable tape or the like, the processed substrate and the glass substrate can be easily fixed and separated.
  • the thermal expansion coefficient of the processed substrate is increased.
  • the alkali metal oxide is about 30% by mass in the glass composition of the glass substrate. It is necessary to introduce and raise the thermal expansion coefficient of the glass substrate.
  • the present invention has been made in view of the above circumstances, and the technical problem thereof is that it is difficult to cause a dimensional change of the processed substrate when the ratio of the semiconductor chip is small and the ratio of the sealing material is large in the processed substrate. In addition, it is to contribute to high-density mounting of semiconductor packages by creating a support substrate with a small amount of alkali elution and a laminate using the support substrate.
  • the present inventor has found that the above technical problem can be solved by using, as a supporting substrate, a crystallized glass substrate in which crystals of high expansion are precipitated in a glass matrix. It is proposed as an invention. That is, the support crystallized glass substrate of the present invention is a support crystallized glass substrate for supporting a processed substrate, and has an average linear thermal expansion coefficient exceeding 70 ⁇ 10 ⁇ 7 / ° C. in a temperature range of 30 to 380 ° C. And 195 ⁇ 10 ⁇ 7 / ° C. or less.
  • the “average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C.” can be measured with a dilatometer.
  • a crystallized glass substrate on which highly expanded crystals are deposited is used as the support substrate.
  • the support substrate When high-expansion crystals are precipitated in the glass matrix, it is not necessary to introduce an excessive amount of alkali metal oxide into the composition in order to increase the thermal expansion coefficient. As a result, it becomes possible to reduce the alkali elution amount of the support crystallized glass substrate.
  • the crystallized glass substrate can be easily smoothed, rigid, and impart light transmittance in the same manner as the glass substrate.
  • the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is more than 70 ⁇ 10 ⁇ 7 / ° C. and is regulated to 195 ⁇ 10 ⁇ 7 / ° C. or less.
  • the support crystallized glass substrate of the present invention is a support crystallized glass substrate for supporting a processed substrate, and has an average linear thermal expansion coefficient of 70 ⁇ 10 ⁇ 7 / in a temperature range of 30 to 500 ° C. It is characterized by being over °C and not more than 195 ⁇ 10 -7 / °C.
  • the “average linear thermal expansion coefficient in the temperature range of 30 to 500 ° C.” can be measured with a dilatometer.
  • the support crystallized glass substrate of the present invention preferably has a Young's modulus of 70 GPa or more.
  • Young's modulus refers to a value measured by a bending resonance method. 1 GPa corresponds to approximately 101.9 kgf / mm 2 .
  • ⁇ -cristobalite, lithium disilicate, ⁇ -quartz, carnegite, spinel, garnite, galactite, enstatite and one or more of these solid solutions are precipitated. It is preferable.
  • the thermal expansion coefficient of the support crystallized glass substrate can be increased.
  • the support crystallized glass substrate of the present invention is preferably free from precipitation of ⁇ -eucryptite, ⁇ -spodumene, ⁇ -cristobalite, ⁇ -quartz and their solid solutions as main crystals. If it does in this way, the situation where the thermal expansion coefficient of a support crystallized glass substrate falls unjustly can be avoided.
  • the “main crystal” refers to a crystal having the largest amount of precipitated crystals.
  • the support crystallized glass substrate of the present invention preferably has a plate thickness of less than 2.0 mm, an overall plate thickness deviation of 30 ⁇ m or less, and a warp amount of 60 ⁇ m or less.
  • the “total plate thickness deviation” is a difference between the maximum plate thickness and the minimum plate thickness of the entire support glass substrate, and can be measured by, for example, SBW-331ML / d manufactured by Kobelco Kaken.
  • ⁇ Warpage amount '' refers to the sum of the absolute value of the maximum distance between the highest point and the least square focal plane in the entire support crystallized glass substrate and the absolute value of the lowest point and the least square focal plane, For example, it can be measured by SBW-331ML / d manufactured by Kobelco Research Institute.
  • the laminate of the present invention is a laminate comprising at least a processed substrate and a supporting crystallized glass substrate for supporting the processed substrate, wherein the supporting crystallized glass substrate is the above-mentioned supporting crystallized glass substrate. Preferably there is.
  • the processed substrate preferably includes a semiconductor chip molded with at least a sealing material.
  • the method of manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a support crystallized glass substrate for supporting the processed substrate, and a processing process for the processed substrate. It is preferable to use the above-mentioned support crystallized glass substrate as the support crystallized glass substrate.
  • the processing includes a step of wiring on one surface of the processed substrate.
  • the processing includes a step of forming solder bumps on one surface of the processed substrate.
  • the semiconductor package of this invention was produced by the manufacturing method of said semiconductor package.
  • the electronic device of the present invention is an electronic device including a semiconductor package, and the semiconductor package is preferably the above-described semiconductor package.
  • the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is more than 70 ⁇ 10 ⁇ 7 / ° C. and not more than 195 ⁇ 10 ⁇ 7 / ° C., preferably 90 ⁇ 10 ⁇ 7 / ° C. and 195 ⁇ 10 ⁇ 7 / ° C. or less, more preferably 100 ⁇ 10 ⁇ 7 / ° C. or more and 160 ⁇ 10 ⁇ 7 / ° C. or less, and particularly preferably 110 ⁇ 10 ⁇ 7 / ° C. or more. And 150 ⁇ 10 ⁇ 7 / ° C. or less. If the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C.
  • the thermal expansion coefficients of the processed substrate and the support crystallized glass substrate are difficult to match. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warp deformation) of the processed substrate is likely to occur during processing.
  • the average linear thermal expansion coefficient in the temperature range of 30 to 500 ° C. is more than 70 ⁇ 10 ⁇ 7 / ° C. and not more than 195 ⁇ 10 ⁇ 7 / ° C., preferably 90 ⁇ 10 ⁇ 7 / ° C. and 195 ⁇ 10 ⁇ 7 / ° C. or less, more preferably 100 ⁇ 10 ⁇ 7 / ° C. or more and 160 ⁇ 10 ⁇ 7 / ° C. or less, and particularly preferably 110 ⁇ 10 ⁇ 7 / ° C. It is not lower than 150 ° C. and not higher than 150 ⁇ 10 ⁇ 7 / ° C.
  • the Young's modulus is preferably 70 GPa or more, 75 GPa or more, 80 GPa or more, 83 GPa or more, and particularly 85 GPa or more. If the Young's modulus is too low, it is difficult to maintain the rigidity of the laminate, and the processed substrate is likely to be deformed, warped, or damaged.
  • the composition is, by mass, SiO 2 30-80%, Al 2 O 3 1-25%, B 2 O 3 0-10%, P 2 O 5 0-20%, Li 2 O 0-15%, Na 2 O 0-25%, K 2 O 0-7%, MgO 0-15%, CaO 0-5%, SrO 0-5%, BaO 0-5%, ZnO 0- 30%, ZrO 2 0-10%, MnO 0-20%, TiO 2 0-20%, Y 2 O 3 0-20% It is more preferable.
  • the reason for limiting the content of each component as described above will be
  • SiO 2 is a main component forming a glass skeleton, and is a component for precipitating ⁇ -cristobalite, ⁇ -quartz and the like. However, if the content of SiO 2 is too small, Young's modulus, acid resistance tends to decrease. Therefore, the content of SiO 2 is preferably 30 to 80%, 33 to 77%, 35 to 76%, 37 to 75%, particularly 39 to 74%.
  • Al 2 O 3 is a component that enhances the Young's modulus and a component that suppresses phase separation and devitrification.
  • the content of Al 2 O 3 is preferably 1 to 25%, 2 to 23%, 2.5 to 21%, 3 to 19%, particularly 3.5 to 17%.
  • B 2 O 3 is a component that enhances meltability and devitrification resistance.
  • the content of B 2 O 3 is preferably 0 to 10%, 0 to 8%, 0 to 5%, 0 to 3%, particularly 0 to 1%.
  • P 2 O 5 is a component for generating crystal nuclei.
  • the content of P 2 O 5 is preferably 0 to 20%, 1.2 to 19%, 1.4 to 18%, particularly 1.5 to 17%.
  • Li 2 O is a component for increasing the Young's modulus and the thermal expansion coefficient, and is a component for lowering the high-temperature viscosity to remarkably increase the meltability and to precipitate lithium disilicate and the like.
  • the content of Li 2 O is preferably 0 to 15%, 6 to 14%, 7 to 13%, particularly 9 to 12%.
  • Na 2 O is a component that increases the coefficient of thermal expansion, and is a component that lowers the viscosity at high temperature to remarkably increase the meltability and precipitate carnegite and the like. Further, it is a component that contributes to the initial melting of the glass raw material. However, when the content of Na 2 O is too large, it tends to be much amount of alkali elution. Therefore, the content of Na 2 O is preferably 0 to 25%, 0.1 to 24%, 0.5 to 23%, particularly 1 to 23%.
  • K 2 O is a component that increases the coefficient of thermal expansion, and is a component that lowers the viscosity at high temperature to remarkably increase the meltability and suppress the coarsening of the precipitated crystals.
  • the content of K 2 O is preferably 0 to 7%, 0.1 to 6%, 0.5 to 5%, 1 to 4%, particularly 2 to 3%.
  • the content of K 2 O is preferably 0 to 7%, 0.1 to 6%, 0.5 to 5%, 1 to 4%, particularly 2 to 3%.
  • polishing process when a precipitation crystal becomes coarse, it will become difficult to reduce the whole plate
  • MgO is a component that lowers the viscosity at high temperature and increases the meltability, and also precipitates spinel and the like. In alkaline earth metal oxides, it is a component that significantly increases the Young's modulus. However, when there is too much content of MgO, it will become easy to devitrify glass at the time of shaping
  • CaO is a component that lowers the high temperature viscosity and remarkably increases the meltability. Moreover, among the alkaline earth metal oxides, since the introduced raw material is relatively inexpensive, it is a component that lowers the batch cost. However, if the content is too large, the glass tends to devitrify during molding. Therefore, the content of CaO is preferably 0 to 5%, 0 to 3%, 0 to 1%, particularly 0 to 0.5%.
  • SrO is a component that suppresses phase separation, and a component that suppresses the coarsening of precipitated crystals.
  • the content of SrO is preferably 0 to 5%, 0 to 3%, 0 to 1.5%, particularly 0 to less than 1%.
  • BaO is a component that suppresses the coarsening of the precipitated crystal, but if its content is too large, it becomes difficult to precipitate the crystal by heat treatment. Therefore, the content of BaO is preferably 0 to 5%, 0 to 4%, particularly 0 to less than 3%.
  • ZnO is a component that lowers the viscosity at high temperature and remarkably increases the meltability, and also precipitates garnite and the like. Furthermore, it is a component that suppresses the coarsening of the precipitated crystals. However, if the ZnO content is too large, the glass tends to devitrify during molding. Therefore, the content of ZnO is preferably 0 to 30%, 0 to 28%, 0 to 26%, particularly 0.1 to 24%.
  • ZrO 2 is a component for generating crystal nuclei and is a component for improving chemical resistance and Young's modulus.
  • the content of ZrO 2 is preferably 0 to 10%, 0.1 to 8%, 0.5 to 7%, particularly 1 to 5%.
  • the content of other components other than the above components is preferably 10% or less, and particularly preferably 5% or less in total, from the viewpoint of accurately enjoying the effects of the present invention.
  • TiO 2 is a component for generating crystal nuclei, and is a component for improving chemical resistance and Young's modulus. However, when a large amount of TiO 2 is introduced, the glass is colored and the transmittance tends to decrease. Therefore, the content of TiO 2 is preferably 0 to 20%, 1 to 19%, 1 to 18%, particularly 1 to 17%.
  • Y 2 O 3 is a component that increases the Young's modulus of glass. However, Y 2 O 3 also has an effect of suppressing crystal growth. Therefore, the content of Y 2 O 3 is preferably 0 to 10%, 0.5 to 8%, particularly 2 to 6%.
  • MnO is a component for precipitating galaxite.
  • the content of MnO is preferably 5 to 30%, 5 to 25%, particularly 5 to 15%.
  • Fe 2 O 3 is a component that can be introduced as an impurity component or a fining agent component.
  • the content of Fe 2 O 3 is preferably 0.05% or less, 0.03% or less, and particularly 0.02% or less.
  • “Fe 2 O 3 ” referred to in the present invention includes divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is handled in terms of Fe 2 O 3 . Similarly, other oxides are handled based on the indicated oxide.
  • Nb 2 O 5 and La 2 O 3 have a function of increasing the strain point, Young's modulus, and the like. However, if the content of these components is more than 5%, particularly more than 1%, the batch cost may increase.
  • As 2 O 3 acts effectively as a fining agent, but from an environmental point of view, it is preferable to reduce this component as much as possible.
  • the content of As 2 O 3 is preferably 1% or less, 0.5% or less, particularly 0.1% or less, and it is desirable not to contain it substantially.
  • substantially free of refers to the case where the content of the explicit component in the composition is less than 0.05%.
  • Sb 2 O 3 is a component having a good clarification action in a low temperature range.
  • the content of Sb 2 O 3 is preferably 0 to 1%, 0.01 to 0.7%, particularly 0.05 to 0.5%.
  • the glass tends to color. Incidentally, when the content of Sb 2 O 3 is too small, it becomes difficult to enjoy the above-mentioned effects.
  • SnO 2 is a component having a good clarification action in a high temperature region and a component that lowers the high temperature viscosity.
  • the SnO 2 content is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.9%, especially 0.05 to 0.7%.
  • Sn-based heterogeneous crystals are likely to precipitate.
  • the content of SnO 2 is too small, it becomes difficult to enjoy the above-mentioned effects.
  • Cl is a component that promotes melting of glass.
  • the melting temperature can be lowered and the clarification action can be promoted.
  • the melting cost can be reduced and the glass production kiln can be easily extended.
  • the Cl content is preferably 3% or less, 1% or less, 0.5% or less, and particularly 0.1% or less.
  • metal powders such as F, SO 3 , C, Al, Si, etc. may be introduced up to about 3%, as long as the glass properties are not impaired. Further, CeO 2 or the like can be introduced up to about 3%, but it is necessary to pay attention to a decrease in ultraviolet transmittance.
  • ⁇ -cristobalite, lithium disilicate, ⁇ -quartz, carnegite, spinel, garnite, galactite, enstatite and one or more of these solid solutions are precipitated, preferably two or more It is more preferable that the is deposited.
  • the thermal expansion coefficient of the crystallized glass substrate can be increased.
  • these crystals are easy to miniaturize and are advantageous for reducing the overall thickness deviation by polishing treatment.
  • lithium disilicate and carnegite are particularly preferred, and lithium disilicate is most preferred.
  • Lithium disilicate has a feature that it can be easily adjusted to a desired thermal expansion coefficient because it is easy to change the thermal expansion coefficient by changing the heat treatment conditions.
  • ⁇ -eucryptite, ⁇ -spodumene, ⁇ -cristobalite, ⁇ -quartz and their solid solutions are not precipitated as main crystals. If it does in this way, the situation where the thermal expansion coefficient of a support crystallized glass substrate falls unjustly can be avoided.
  • the support crystallized glass substrate of the present invention preferably has a substantially disk shape or wafer shape, and its diameter is preferably 100 mm or more and 500 mm or less, particularly preferably 150 mm or more and 450 mm or less. In this way, it becomes easy to apply to the manufacturing process of a semiconductor package. You may process into other shapes, for example, shapes, such as a rectangle, as needed.
  • the roundness (excluding the notch portion) is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, particularly 0.03 mm or less.
  • the definition of the roundness is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer.
  • the plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, particularly 0.9 mm or less.
  • the plate thickness decreases, the mass of the laminate becomes lighter, and thus handling properties are improved.
  • the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, particularly more than 0.7 mm.
  • the overall plate thickness deviation is preferably 30 ⁇ m or less, 20 ⁇ m or less, 10 ⁇ m or less, 5 ⁇ m or less, 4 ⁇ m or less, 3 ⁇ m or less, 2 ⁇ m or less, 1 ⁇ m or less, particularly 0.1 to 1 ⁇ m or less.
  • the smaller the overall plate thickness deviation the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be increased, high-density wiring is possible.
  • the amount of warp is preferably 60 ⁇ m or less, 55 ⁇ m or less, 50 ⁇ m or less, 1 to 45 ⁇ m, particularly 5 to 40 ⁇ m.
  • the smaller the warp amount the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be increased, high-density wiring is possible.
  • the method for producing the support crystallized glass substrate of the present invention will be described.
  • glass raw materials are prepared so as to have a predetermined composition, and the obtained glass batch is melted at a temperature of 1550 to 1750 ° C. and then formed into a plate shape to obtain a crystalline glass substrate.
  • Various methods can be adopted as the forming method. For example, a slot down method, a redraw method, a float method, an ingot molding method, or the like can be adopted.
  • a crystallized glass substrate can be produced by heat treatment at 700 to 1000 ° C. for 0.5 to 3 hours to generate crystal nuclei in the crystalline glass substrate and grow the crystal.
  • a crystal nucleus forming step for forming crystal nuclei on the crystalline glass substrate may be provided before the step of growing the crystal.
  • the laminate of the present invention is a laminate comprising at least a processed substrate and a support crystallized glass substrate for supporting the process substrate, wherein the support crystallized glass substrate is the above-mentioned support crystallized glass substrate.
  • the technical characteristics (preferable structure and effect) of the laminate of the present invention overlap with the technical characteristics of the support crystallized glass substrate of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.
  • the laminate of the present invention preferably has an adhesive layer between the processed substrate and the support crystallized glass substrate.
  • the adhesive layer is preferably a resin, for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like.
  • a resin for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like.
  • an ultraviolet curable tape can also be used as an adhesive layer.
  • the laminate of the present invention further has a release layer between the processed substrate and the supporting crystallized glass substrate, more specifically between the processed substrate and the adhesive layer, or between the supporting crystallized glass substrate and the adhesive layer. It is preferable to have a peeling layer between them. If it does in this way, it will become easy to peel a processed substrate from a support crystallized glass substrate, after performing predetermined processing processing to a processed substrate. Peeling of the processed substrate is preferably performed with irradiation light such as laser light from the viewpoint of productivity.
  • the laser light source an infrared laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used.
  • disassembles by irradiating an infrared laser can be used for a peeling layer.
  • a substance that efficiently absorbs infrared rays and converts it into heat can also be added to the resin.
  • carbon black, graphite powder, fine metal powder, dye, pigment, etc. can be added to the resin.
  • the peeling layer is made of a material that causes “in-layer peeling” or “interfacial peeling” by irradiation light such as laser light. That is, when light of a certain intensity is irradiated, the bonding force between atoms or molecules in an atom or molecule disappears or decreases, and ablation or the like is caused to cause peeling.
  • the component contained in the release layer is released as a gas due to irradiation of irradiation light, the separation layer is released, and when the release layer absorbs light and becomes a gas, and its vapor is released, resulting in separation There is.
  • the supporting crystallized glass substrate is preferably larger than the processed substrate.
  • the method of manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a support crystallized glass substrate for supporting the processed substrate, a step of performing a processing process on the processed substrate, And the support crystallized glass substrate is the above-mentioned support crystallized glass substrate.
  • the technical characteristics (preferable structure and effect) of the manufacturing method of the semiconductor package of the present invention overlap with the technical characteristics of the support crystallized glass substrate and the laminate of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.
  • the semiconductor package manufacturing method of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting crystallized glass substrate for supporting the processed substrate.
  • a laminate including a processed substrate and a support crystallized glass substrate for supporting the processed substrate has the material configuration described above.
  • the method for manufacturing a semiconductor package of the present invention further includes a step of transporting the stacked body.
  • the processing efficiency of a processing process can be improved. Note that the “process for transporting the laminate” and the “process for processing the processed substrate” do not need to be performed separately and may be performed simultaneously.
  • the processing is preferably performed by wiring on one surface of the processed substrate or forming solder bumps on one surface of the processed substrate.
  • the processing since the processed substrate is difficult to change in dimensions during these processes, these steps can be appropriately performed.
  • one surface of the processed substrate (usually the surface opposite to the supporting crystallized glass substrate) is mechanically polished, and one surface of the processed substrate (usually supporting crystallization) Either a process of dry etching the surface opposite to the glass substrate) or a process of wet etching one surface of the processed substrate (usually the surface opposite to the supporting crystallized glass substrate) may be used.
  • the processed substrate is unlikely to warp and the rigidity of the stacked body can be maintained. As a result, the above processing can be performed appropriately.
  • the semiconductor package of the present invention is manufactured by the above-described semiconductor package manufacturing method.
  • the technical characteristics (preferable configuration and effect) of the semiconductor package of the present invention overlap with the technical characteristics of the manufacturing method of the support crystallized glass substrate, the laminate, and the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.
  • An electronic device of the present invention is an electronic device including a semiconductor package, and the semiconductor package is the semiconductor package described above.
  • the technical characteristics (preferable configuration and effect) of the electronic device of the present invention overlap with the technical characteristics of the support crystallized glass substrate, the laminate, the semiconductor package manufacturing method, and the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.
  • FIG. 1 is a conceptual perspective view showing an example of a laminate 1 of the present invention.
  • the laminate 1 includes a supporting crystallized glass substrate 10 and a processed substrate 11.
  • the support crystallized glass substrate 10 is attached to the processed substrate 11 in order to prevent a dimensional change of the processed substrate 11.
  • a peeling layer 12 and an adhesive layer 13 are disposed between the support crystallized glass substrate 10 and the processed substrate 11.
  • the release layer 12 is in contact with the support crystallized glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.
  • the laminate 1 is laminated in the order of a support crystallized glass substrate 10, a release layer 12, an adhesive layer 13, and a processed substrate 11.
  • the shape of the support crystallized glass substrate 10 is determined according to the processed substrate 11.
  • the shapes of the support crystallized glass substrate 10 and the processed substrate 11 are both substantially disk shapes.
  • a resin that decomposes when irradiated with a laser can be used.
  • a substance that efficiently absorbs laser light and converts it into heat can also be added to the resin.
  • carbon black, graphite powder, fine metal powder, dye, pigment or the like can be added to the resin.
  • the release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like.
  • the adhesive layer 13 is made of a resin, and is applied and formed by, for example, various printing methods, inkjet methods, spin coating methods, roll coating methods, and the like.
  • An ultraviolet curable tape can also be used. After the support crystallized glass substrate 10 is peeled from the processed substrate 11 by the release layer 12, the adhesive layer 13 is dissolved and removed by a solvent or the like. The ultraviolet curable tape can be removed with a peeling tape after being irradiated with ultraviolet rays.
  • FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan out type WLP.
  • FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. A peeling layer may be formed between the support member 20 and the adhesive layer 21 as necessary.
  • FIG. 2B a plurality of semiconductor chips 22 are pasted on the adhesive layer 21. At that time, the surface on the active side of the semiconductor chip 22 is brought into contact with the adhesive layer 21.
  • the semiconductor chip 22 is molded with a resin sealing material 23.
  • the sealing material 23 is made of a material having little dimensional change after compression molding and little dimensional change when forming a wiring. Subsequently, as shown in FIGS.
  • the support crystallized glass substrate 26 and the adhesive layer 25 are interposed. Adhere and fix. At that time, the surface of the processed substrate 24 opposite to the surface on which the semiconductor chip 22 is embedded is disposed on the supporting crystallized glass substrate 26 side. In this way, the laminate 27 can be obtained. In addition, you may form a peeling layer between the contact bonding layer 25 and the support crystallized glass substrate 26 as needed. Further, after the obtained laminated body 27 is conveyed, as shown in FIG. 2 (f), a wiring 28 is formed on the surface of the processed substrate 24 where the semiconductor chip 22 is embedded, and then a plurality of solder bumps 29 are formed. Form. Finally, after separating the processed substrate 24 from the support crystallized glass substrate 26, the processed substrate 24 is cut into semiconductor chips 22 for use in a subsequent packaging process (FIG. 2 (g)).
  • Tables 1 to 3 show examples of the present invention (sample Nos. 1 to 26).
  • a glass batch in which glass raw materials were prepared so as to have the composition shown in the table was placed in a platinum crucible and melted at 1600 ° C. for 4 hours.
  • the mixture was stirred and homogenized using a platinum stirrer.
  • the molten glass was poured out on a carbon plate, formed into a plate shape, and then gradually cooled from a temperature about 20 ° C. higher than the annealing point to room temperature at 3 ° C./min.
  • Each obtained crystalline glass sample was put into an electric furnace and held at 500 ° C. to 800 ° C. for 0.5 to 5 hours to generate crystal nuclei, and then at 850 ° C. to 1000 ° C. for 1 hour to 5 hours.
  • the average linear thermal expansion coefficient alpha 30 ⁇ 500 in the temperature range of average linear thermal expansion coefficient ⁇ 30 ⁇ 380, 30 ⁇ 500 °C in the temperature range of 30 ⁇ 380 ° C., the density [rho, yield The point Tf, Young's modulus E, and precipitated crystals were evaluated.
  • Average linear thermal expansion coefficient alpha 30 ⁇ 500 in the average line temperature range between the thermal expansion coefficient ⁇ 30 ⁇ 380 30 ⁇ 500 °C in the temperature range of 30 ⁇ 380 ° C. is a value measured by a dilatometer.
  • the density ⁇ is a value measured by the well-known Archimedes method.
  • the yield point Tf indicates a value measured by a push rod type thermal expansion coefficient measuring device.
  • the Young's modulus E refers to a value measured by the resonance method.
  • Li 2 O.2SiO 2 lithium disilicate
  • ⁇ -Quartz is ⁇ -quartz
  • Carnegieite is carnegiaite
  • Spinel is spinel
  • Gahnite is garnite
  • Gaalaxite is Galaxite and “Enstate” refer to enstatite, respectively.
  • sample No. Nos. 1 to 26 have a low alkali metal oxide content and an average linear thermal expansion coefficient ⁇ 30 to 380 in the temperature range of 30 to 380 ° C. is 72 ⁇ 10 ⁇ 7 / ° C. to 185 ⁇ 10 ⁇ 7 / ° C.
  • the average linear thermal expansion coefficient ⁇ 30 to 500 in the temperature range of 30 to 500 ° C. was 74 ⁇ 10 ⁇ 7 / ° C. to 175 ⁇ 10 ⁇ 7 / ° C. Therefore, sample no. Nos. 1 to 26 are considered to be suitable as support substrates used for supporting the processed substrate in the manufacturing process of the semiconductor manufacturing apparatus.
  • each sample of [Example 2] was produced as follows. First, the sample No. described in the table was used. After preparing the glass raw material so that it has a composition of 1 to 26, it is supplied to a glass melting furnace and melted at 1550 to 1650 ° C., and then the molten glass is poured into a ceramic mold and molded into a plate shape. did. About each obtained sample, it put into the electric furnace and was hold
  • the obtained crystallized glass substrate (overall plate thickness deviation of about 4.0 ⁇ m) was processed to a thickness of ⁇ 300 mm ⁇ 0.7 mm, and both surfaces thereof were polished by a polishing apparatus. Specifically, both surfaces of the crystallized glass substrate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the crystallized glass substrate were polished while rotating the crystallized glass substrate and the pair of polishing pads together. . During the polishing process, control was sometimes performed so that a part of the crystallized glass substrate protruded from the polishing pad.
  • the polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 ⁇ m, and the polishing rate was 15 m / min.
  • the total thickness deviation and the warpage amount were measured by SBW-331ML / d manufactured by Kobelco Kaken. As a result, the overall plate thickness deviations were each less than 1.0 ⁇ m, and the warpage amounts were each 35 ⁇ m or less.
  • the support crystallized glass substrate of the present invention is preferably used for supporting a processed substrate in a manufacturing process of a semiconductor package, but can be applied to applications other than this application.
  • it can be applied as an alternative substrate for a high expansion metal substrate such as an aluminum alloy substrate, and can also be applied as an alternative substrate for a high expansion ceramic substrate such as a zirconia substrate or a ferrite substrate.

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  • Engineering & Computer Science (AREA)
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PCT/JP2016/086428 2015-12-16 2016-12-07 支持結晶化ガラス基板及びこれを用いた積層体 WO2017104514A1 (ja)

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US20200407266A1 (en) * 2018-02-20 2020-12-31 Nippon Electric Glass Co., Ltd. Glass
US11370693B2 (en) 2019-01-28 2022-06-28 Corning Incorporated Glass-ceramic articles, compositions, and methods of making the same
WO2023127306A1 (ja) * 2021-12-27 2023-07-06 日本電気硝子株式会社 結晶化ガラス及び結晶性ガラス
JP7538483B2 (ja) 2017-07-26 2024-08-22 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層基板

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CN109928639A (zh) * 2019-01-31 2019-06-25 无锡麦格拉斯新材料有限公司 一种用于金属表面防护的微晶玻璃复合材料及其制备方法
CN110482866B (zh) * 2019-08-21 2022-08-02 成都光明光电股份有限公司 微晶玻璃制品、微晶玻璃及其制造方法
CN110510879A (zh) * 2019-08-21 2019-11-29 成都光明光电股份有限公司 微晶玻璃制品、微晶玻璃及其制造方法

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