WO2017101185A1 - 液晶面板及其像素结构 - Google Patents

液晶面板及其像素结构 Download PDF

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Publication number
WO2017101185A1
WO2017101185A1 PCT/CN2016/070627 CN2016070627W WO2017101185A1 WO 2017101185 A1 WO2017101185 A1 WO 2017101185A1 CN 2016070627 W CN2016070627 W CN 2016070627W WO 2017101185 A1 WO2017101185 A1 WO 2017101185A1
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Prior art keywords
common electrode
pixel electrodes
channels
pixel
protective layer
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PCT/CN2016/070627
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English (en)
French (fr)
Inventor
李亚锋
彭香艺
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US14/907,865 priority Critical patent/US10156756B2/en
Publication of WO2017101185A1 publication Critical patent/WO2017101185A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements

Definitions

  • the present invention relates to the field of liquid crystal display technology, and more particularly to a liquid crystal panel and a pixel structure thereof.
  • the liquid crystal transmittance is the ability of the backlight to penetrate the liquid crystal layer, and has an important relationship with the liquid crystal electric field distribution and the electric field density.
  • the liquid crystal electric field distribution and electric field density are determined by the pixel electrodes in the pixel structure and the applied electric field. Therefore, the design of the pixel electrode has very important significance.
  • the pixel electrode is connected to the source/drain through a channel through the protective layer, so the via hole needs to be fabricated in the process.
  • the common electrode is a full-face type.
  • the electric field is generated by two layers of electrodes (common electrode and pixel electrode), and the pixel electrode has to pass through the protective layer to form a potential difference with the common electrode.
  • the electric field passes through the protective layer, the electric field strength is attenuated, so that the electric field line distribution surface is formed to be small, and the electric field density is low.
  • the present invention provides a liquid crystal panel and a pixel structure thereof to solve the problem that the electric field line distribution surface existing in the prior art is small and the electric field density is low.
  • an embodiment of the present invention provides a pixel structure, wherein the pixel structure includes: a common electrode, a protective layer, a plurality of pixel electrodes, and a plurality of first channels.
  • the protective layer is on the common electrode.
  • the plurality of pixel electrodes are located on the protective layer.
  • the plurality of first channels are located between the adjacent pixel electrodes and extend through the protective layer, wherein the plurality of first channels expose an upper surface of the common electrode, wherein the pixel structure further comprises a second channel, each of the plurality of second channels respectively corresponding to an end portion of each of the plurality of pixel electrodes; wherein each of the plurality of pixel electrodes is in an extending direction of each other Parallel extensions are formed on the common electrode.
  • the second channel is a via hole for electrically connecting each of the plurality of pixel electrodes and the common electrode.
  • the common electrode and the material of the plurality of pixel electrodes are indium tin oxide.
  • a further embodiment of the present invention provides a pixel structure, wherein the pixel structure includes: a common electrode, a protective layer, a plurality of pixel electrodes, and a plurality of first channels.
  • the protective layer is on the common electrode.
  • the plurality of pixel electrodes are located on the protective layer.
  • the plurality of first channels are located between the adjacent pixel electrodes and penetrate the protective layer, wherein the plurality of first channels expose an upper surface of the common electrode.
  • the method further includes a plurality of second channels, each of the plurality of second channels respectively corresponding to one end portion of each of the plurality of pixel electrodes, wherein the plurality of The second channel exposes the upper surface of the common electrode.
  • the second channel is a via hole for electrically connecting each of the plurality of pixel electrodes and the common electrode.
  • each of the plurality of pixel electrodes is formed to extend parallel to each other in an extending direction on the common electrode.
  • the common electrode and the material of the plurality of pixel electrodes are indium tin oxide.
  • another embodiment of the present invention provides a liquid crystal panel structure, wherein the liquid crystal panel structure includes a pixel structure, and the pixel structure includes: a common electrode, a protective layer, a plurality of pixel electrodes, and a plurality of first aisle.
  • the protective layer is on the common electrode.
  • the plurality of pixel electrodes are located on the protective layer.
  • the plurality of first channels are located between the adjacent pixel electrodes and penetrate the protective layer, wherein the plurality of first channels expose an upper surface of the common electrode.
  • an array substrate is further included, wherein the array substrate has the pixel structure.
  • the pixel structure further includes a plurality of second channels, each of the plurality of second channels respectively corresponding to an end portion of each of the plurality of pixel electrodes, Wherein the plurality of second channels expose the upper surface of the common electrode.
  • the second channel is a via hole for electrically connecting each of the plurality of pixel electrodes and the common electrode.
  • each of the plurality of pixel electrodes is formed to extend parallel to each other in an extending direction on the common electrode.
  • the common electrode and the material of the plurality of pixel electrodes are indium tin oxide.
  • the invention provides a liquid crystal panel and a pixel structure thereof, so as to solve the problem that the electric field line distribution surface existing in the prior art is small and the electric field density is low.
  • FIG. 1 is a top plan view showing a pixel structure of a liquid crystal panel structure according to an embodiment of the present invention.
  • Fig. 2A is a schematic cross-sectional view taken along line A-A' of Fig. 1.
  • Fig. 2B is a schematic cross-sectional view taken along line B-B' of Fig. 1.
  • FIG. 1 is a top plan view of a pixel structure 10 of a liquid crystal panel structure 26 according to an embodiment of the present invention
  • FIG. 2A is a cross-sectional view taken along line AA' of FIG. 1
  • 2B is a schematic cross-sectional view taken along line BB' of Fig. 1.
  • the pixel structure 10 of an embodiment of the invention mainly includes a common electrode 12, a protective layer 14, a plurality of pixel electrodes 16, and a plurality of first channels 18.
  • the material of the common electrode 12 may be indium tin oxide.
  • the protective layer 14 is located on the common electrode 12.
  • the protective layer 14 is a passivation layer made of, for example, silicon nitride (SiNx) and silicon oxide (SiOx).
  • the protective layer 14 is used to protect and partition the common electrode 12 and the plurality of pixel electrodes 16.
  • the plurality of pixel electrodes 16 are located on the protective layer 14, wherein the material of the plurality of pixel electrodes 16 may be indium tin oxide.
  • each of the plurality of pixel electrodes 16 is formed to extend parallel to each other in an extending direction 20 on the common electrode 12.
  • the extending direction 20 is referred to as an up-and-down direction in FIG. 1, and a slit is formed between the adjacent plurality of pixel electrodes 16 for aligning the liquid crystal.
  • the plurality of first channels 18 are located between the adjacent pixel electrodes 16 and penetrate the protective layer 14 , wherein the plurality of first channels 16 expose an upper surface 22 of the common electrode.
  • the plurality of first channels 18 are mainly used to avoid the problem that the electric field line distribution surface is small and the electric field density is low.
  • the plurality of first channels 18 may be arranged along the extending direction 20 .
  • a potential difference is generated between the common electrode 12 and the plurality of pixel electrodes 16, and the protective layer 14 located between the common electrode 12 and the plurality of pixel electrodes 16 is lowered.
  • the potential difference is described because the presence of the protective layer 14 inevitably reduces the potential difference. Therefore, the plurality of first channels 18 are used to expose the upper surface 22 of the common electrode 12, and the amount of decrease of the potential difference is reduced by reducing the proportion of the protective layer 14, thereby making the electric field line distribution surface large and the electric field high density.
  • the pixel structure 10 of an embodiment of the present invention further includes a plurality of second channels 24, each of the plurality of second channels 24 correspondingly formed in each of the plurality of pixel electrodes 16 One end portion 25 of one, wherein the plurality of second channels 24 expose the upper surface 22 of the common electrode 12.
  • the second channel 24 is a via hole for electrically connecting each of the plurality of pixel electrodes 16 and the common electrode 12 .
  • the pixel structure 10 may also be included.
  • the liquid crystal panel structure 26 can include an array substrate 28 having the pixel structure 10 thereon.
  • the liquid crystal panel structure 26 further includes a light shielding layer 29, a first insulating layer 30, a polycrystalline layer 32, a second insulating layer 34, a third insulating layer 36, and a flat protection.
  • Layer 38 the light shielding layer 28 may be a black matrix; the materials of the first insulating layer 30, the second insulating layer 34, and the third insulating layer 36 include silicon nitride (SiNx) and silicon oxide (SiOx). .
  • the pixel structure 10 is disposed on the flat protective layer 38, wherein the common electrode 12 is formed on the flat protective layer 38.
  • the material of the flat protective layer 38 is selected, for example, from an organic substance.
  • the plurality of first channels 18 are mainly formed within the protective layer 14, and the plurality of first channels 18 are not located at the positions of the plurality of pixel electrodes 16. Instead, it is located between adjacent pixel electrodes 16. Therefore, the plurality of first channels 18 are used to expose the upper surface 22 of the common electrode 12, and the amount of decrease of the potential difference is reduced by reducing the proportion of the protective layer 14, thereby making the electric field line distribution surface large and the electric field high density.
  • the present invention provides a liquid crystal panel and a pixel structure thereof, which are formed by forming a plurality of first channels in a protective layer of a pixel structure to solve the problem that the electric field line distribution surface existing in the prior art is small and the electric field density is Low problem.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

一种液晶面板（26）及其像素结构（10），其中所述像素结构（10）包含一共通电极（12）、一保护层（14）、多个像素电极（16）及多个第一通道（18）。所述保护层（14）位于所述共通电极（12）上。所述多个像素电极（16）位于所述保护层（14）上。所述多个第一通道（18）位于相邻的所述像素电极（16）之间并贯穿所述保护层（14），其中所述多个第一通道（18）裸露所述共通电极（12）的一上表面（22）。

Description

液晶面板及其像素结构 技术领域
本发明是有关于液晶显示技术领域，特别是有关于一种液晶面板及其像素结构。
 背景技术
液晶穿透率是背光的光线能够穿透液晶层的能力，与液晶电场分布和电场密度有着重要联系。液晶电场分布和电场密度是由像素结构中的像素电极和外加电场决定的。因此，像素电极的设计具有非常重要的意义。
对于一个像素而言，像素电极会通过一个穿过保护层的通道来与源/漏极连接，故在制程工艺中需要制造此通道孔。传统的像素结构中，此通道孔只有一个，而共通电极是整面型的。电场是通过两层电极（共通电极与像素电极）产生，而像素电极要穿过保护层才能和共通电极形成电势差。当电场穿过保护层时，电场强度会衰减，因此势必导致形成电场线分布面小，且电场密度低。
故，有必要提供一种液晶面板及其像素结构，以解决现有技术所存在的问题。
 技术问题
有鉴于此，本发明提供一种液晶面板及其像素结构，以解决现有技术所存在的电场线分布面小，且电场密度低问题。
 技术解决方案
为达成本发明的前述目的，本发明一实施例提供一种像素结构，其中所述像素结构包含:一共通电极、一保护层、多个像素电极及多个第一通道。所述保护层位于所述共通电极上。所述多个多个像素电极位于所述保护层上。所述多个第一通道位于相邻的所述像素电极之间并贯穿所述保护层，其中所述多个第一通道裸露所述共通电极的一上表面，其中所述像素结构更包含多个第二通道，所述多个第二通道中的每一个分别对应形成于所述多个像素电极中的每一个的一端部；其中所述多个像素电极的每一个在一延伸方向上彼此平行的延伸形成于所述共通电极上。
在本发明的一实施例中，所述第二通道为一导通孔，用以电性连接所述多个像素电极的每一个与所述共通电极。
在本发明的一实施例中，所述共通电极及所述多个像素电极的材料是氧化铟锡。
本发明又一实施例提供一种像素结构，其中所述像素结构包含:一共通电极、一保护层、多个像素电极及多个第一通道。所述保护层位于所述共通电极上。所述多个多个像素电极位于所述保护层上。所述多个第一通道位于相邻的所述像素电极之间并贯穿所述保护层，其中所述多个第一通道裸露所述共通电极的一上表面。
在本发明的一实施例中，更包含多个第二通道，所述多个第二通道中的每一个分别对应形成于所述多个像素电极中的每一个的一端部，其中所述多个第二通道裸露所述共通电极的上表面。
在本发明的一实施例中，所述第二通道为一导通孔，用以电性连接所述多个像素电极的每一个与所述共通电极。
在本发明的一实施例中，所述多个像素电极的每一个在一延伸方向上彼此平行的延伸形成于所述共通电极上。
在本发明的一实施例中，所述共通电极及所述多个像素电极的材料是氧化铟锡。
再者，本发明另一实施例提供一种液晶面板结构，其中所述液晶面板结构包含一像素结构，所述像素结构包含:一共通电极、一保护层、多个像素电极及多个第一通道。所述保护层位于所述共通电极上。所述多个多个像素电极位于所述保护层上。所述多个第一通道位于相邻的所述像素电极之间并贯穿所述保护层，其中所述多个第一通道裸露所述共通电极的一上表面。
在本发明的一实施例中，还包含一阵列基板，其中所述阵列基板上具有所述像素结构。
在本发明的一实施例中，所述像素结构更包含多个第二通道，所述多个第二通道中的每一个分别对应形成于所述多个像素电极中的每一个的一端部，其中所述多个第二通道裸露所述共通电极的上表面。
在本发明的一实施例中，所述第二通道为一导通孔，用以电性连接所述多个像素电极的每一个与所述共通电极。
在本发明的一实施例中，所述多个像素电极的每一个在一延伸方向上彼此平行的延伸形成于所述共通电极上。
在本发明的一实施例中，所述共通电极及所述多个像素电极的材料是氧化铟锡。
 有益效果
本发明提供一种液晶面板及其像素结构，以解决现有技术所存在的电场线分布面小，且电场密度低问题。
附图说明
图1是本发明一实施例的液晶面板结构的像素结构的上视示意图。
图2A是沿着图1的A-A’线的剖面示意图。
图2B是沿着图1的B-B’线的剖面示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图1至2B所示，图1是本发明一实施例的液晶面板结构26的像素结构10的上视示意图；图2A是沿着图1的A-A’线的剖面示意图；及图2B是沿着图1的B-B’线的剖面示意图。本发明一实施例的像素结构10主要包含一共通电极12、一保护层14、多个像素电极16及多个第一通道18。所述共通电极12的材料可以是氧化铟锡。所述保护层14位于所述共通电极12上。在一实施例中，所述保护层14是一钝化层，其材质例如选自氮化硅(SiNx)及氧化硅(SiOx)。所述保护层14用以保护并区隔所述共通电极12及所述多个像素电极16。所述多个像素电极16位于所述保护层14上，其中所述多个像素电极16的材料可以是氧化铟锡。在一实施例中，所述多个像素电极16的每一个在一延伸方向20上彼此平行的延伸形成于所述共通电极12上。例如，所述延伸方向20在图1中系指上下方向，而相邻的所述多个像素电极16之间形成狭缝(slit)，用以对液晶进行配向。所述多个第一通道18位于相邻的所述像素电极16之间并贯穿所述保护层14，其中所述多个第一通道16裸露所述共通电极的一上表面22。所述多个第一通道18主要是用来避免电场线分布面小且电场密度低的问题。在一实施例中，所述多个第一通道18可以沿着所述延伸方向20排列设置。详言之，所述共通电极12及所述多个像素电极16之间会产生电势差，而位在所述共通电极12及所述多个像素电极16之间的所述保护层14会降低所述电势差，因为所述保护层14的存在不可避免的会降低所述电势差。因此，所述多个第一通道18用来裸露所述共通电极12的上表面22，通过减少所述保护层14的比例来减少所述电势差的下降量，从而使电场线分布面大且电场密度高。
在一实施例中，本发明一实施例的像素结构10更包含多个第二通道24，所述多个第二通道24中的每一个分别对应形成于所述多个像素电极16中的每一个的一端部25，其中所述多个第二通道24裸露所述共通电极12的上表面22。所述第二通道24为一导通孔，用以电性连接所述多个像素电极16的每一个与所述共通电极12。
在本发明另一实施例之一液晶面板结构26中，还可包含所述像素结构10。所述液晶面板结构26可包含一阵列基板28，其中所述阵列基板28上具有所述像素结构10。在一实施例中，所述液晶面板结构26还可包含一遮光层29、一第一绝缘层30、一多晶层32、一第二绝缘层34、一第三绝缘层36及一平坦保护层38。例如，所述遮光层28可以是黑色矩阵；所述第一绝缘层30、所述第二绝缘层34及所述第三绝缘层36的材质包含氮化硅(SiNx)及氧化硅(SiOx)。所述像素结构10设于所述平坦保护层38上，其中所述共通电极12是整面的形成于所述平坦保护层38上。所述平坦保护层38的材质例如选自有机物。从图4A及4B中可知，所述多个第一通道18主要是形成在所述保护层14之内，且所述多个第一通道18并不是位在所述多个像素电极16的位置，而是位在相邻的所述像素电极16之间。因此，所述多个第一通道18用来裸露所述共通电极12的上表面22，通过减少所述保护层14的比例来减少所述电势差的下降量，从而使电场线分布面大且电场密度高。
综上所述，本发明提供一种液晶面板及其像素结构，透过在像素结构的保护层中形成多个第一通道，以解决现有技术所存在的电场线分布面小，且电场密度低问题。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (14)

  1. 一种像素结构，其包含：
    一共通电极；
    一保护层，位于所述共通电极上；
    多个像素电极，位于所述保护层上；及
    多个第一通道，位于相邻的所述像素电极之间并贯穿所述保护层，其中所述多个第一通道裸露所述共通电极的一上表面，
    其中所述像素结构更包含多个第二通道，所述多个第二通道中的每一个分别对应形成于所述多个像素电极中的每一个的一端部，其中所述多个第二通道裸露所述共通电极的上表面；
    其中所述多个像素电极的每一个在一延伸方向上彼此平行的延伸形成于所述共通电极上。
  2. 如权利要求1所述的像素结构，其中所述第二通道为一导通孔，用以电性连接所述多个像素电极的每一个与所述共通电极。
  3. 如权利要求1所述的像素结构，其中所述共通电极及所述多个像素电极的材料是氧化铟锡。
  4. 一种像素结构，其包含：
    一共通电极；
    一保护层，位于所述共通电极上；
    多个像素电极，位于所述保护层上；及
    多个第一通道，位于相邻的所述像素电极之间并贯穿所述保护层，其中所述多个第一通道裸露所述共通电极的一上表面。
  5. 如权利要求4所述的像素结构，其中更包含多个第二通道，所述多个第二通道中的每一个分别对应形成于所述多个像素电极中的每一个的一端部，其中所述多个第二通道裸露所述共通电极的上表面。
  6. 如权利要求5所述的像素结构，其中所述第二通道为一导通孔，用以电性连接所述多个像素电极的每一个与所述共通电极。
  7. 如权利要求4所述的像素结构，其中所述多个像素电极的每一个在一延伸方向上彼此平行的延伸形成于所述共通电极上。
  8. 如权利要求4所述的像素结构，其中所述共通电极及所述多个像素电极的材料是氧化铟锡。
  9. 一种液晶面板结构，其包含一像素结构，所述像素结构包含：
    一共通电极；
    一保护层，位于所述共通电极上；
    多个像素电极，位于所述保护层上；及
    多个第一通道，位于相邻的所述像素电极之间并贯穿所述保护层，其中所述多个第一通道裸露所述共通电极的一上表面。。
  10. 如权利要求9所述的液晶面板结构，其中还包含一阵列基板，其中所述阵列基板上具有所述像素结构。
  11. 如权利要求9所述的液晶面板结构，其中所述像素结构更包含多个第二通道，所述多个第二通道中的每一个分别对应形成于所述多个像素电极中的每一个的一端部，其中所述多个第二通道裸露所述共通电极的上表面。
  12. 如权利要求11所述的液晶面板结构，其中所述第二通道为一导通孔，用以电性连接所述多个像素电极的每一个与所述共通电极。
  13. 如权利要求9所述的液晶面板结构，其中所述多个像素电极的每一个在一延伸方向上彼此平行的延伸形成于所述共通电极上。
  14. 如权利要求9所述的液晶面板结构，其中所述共通电极及所述多个像素电极的材料是氧化铟锡。
PCT/CN2016/070627 2015-12-18 2016-01-12 液晶面板及其像素结构 Ceased WO2017101185A1 (zh)

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