WO2017092090A1 - 量子点彩膜基板的制作方法 - Google Patents

量子点彩膜基板的制作方法 Download PDF

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Publication number
WO2017092090A1
WO2017092090A1 PCT/CN2015/098351 CN2015098351W WO2017092090A1 WO 2017092090 A1 WO2017092090 A1 WO 2017092090A1 CN 2015098351 W CN2015098351 W CN 2015098351W WO 2017092090 A1 WO2017092090 A1 WO 2017092090A1
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Prior art keywords
liquid crystal
quantum dot
substrate
transparent
photoresist layer
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English (en)
French (fr)
Inventor
李兰艳
梁宇恒
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/914,638 priority Critical patent/US9904097B2/en
Publication of WO2017092090A1 publication Critical patent/WO2017092090A1/zh
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F1/1336—Illuminating devices
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    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F2202/00—Materials and properties
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Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a quantum dot color film substrate.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • RGB color photoresist layer As a color filter which is one of the important components of the liquid crystal display, the color filter is mainly realized by the filtering of the RGB color photoresist layer.
  • Quantum Dots refer to semiconductor grains having a particle size of 1-100 nm. Since the particle size of the QDs is small, the quantum Boolean effect is smaller or closer to the exciton Bohr radius of the corresponding bulk material, and the continuous energy band structure of the bulk material is transformed into a discrete energy level structure, which is excited by the external light source. The electrons will transition and emit fluorescence.
  • the special discrete level structure of QDs makes its half-wave width narrower, so it can emit high-purity monochromatic light, which has higher luminous efficiency than traditional displays.
  • the size of the QDs is greatly affected by the size of the QDs or the QDs of different compositions can be used to excite different wavelengths of light.
  • the introduction of QDs on the color film substrate instead of the conventional color photoresist can greatly improve the color gamut and transmittance of the TFT-LCD, resulting in better display effects.
  • the RGB color photoresist layer in the TFT-LCD is mainly made of a photoresist of different colors by a yellow light process, and is formed by exposure and development.
  • the photoinitiator in the photoresist composition is a reactive group, and if the QDs are dispersed In the photoresist, QDs are nanoparticles, which are very easy to react with the initiator, resulting in a sharp decrease or even quenching of the luminous efficiency, which affects the performance of the QDs. Therefore, it is very difficult to develop a photoresist material with high luminous efficiency.
  • the development process in the photo process removes unwanted portions by development, and the quantum dot material is wasted.
  • the inkjet printing method can directly print the quantum dot ink containing QDs directly to a specified position, which theoretically does not cause material waste, but the quantum dot ink will form a circular printing point during printing.
  • it is generally necessary to provide a retaining wall and then print the quantum dot ink in the hole formed by the retaining wall.
  • An object of the present invention is to provide a method for fabricating a quantum dot color film substrate, which uses a gray scale pattern on a mask to form a pixel retaining wall, a main spacer, and an auxiliary spacer by one exposure and development, and then in a pixel block.
  • the patterned quantum dot layer is formed by inkjet printing in the area enclosed by the wall, and the process is simple, the time is short, the equipment cost is low, and the quantum dot material utilization rate is high.
  • the present invention provides a method of fabricating a color filter substrate, comprising the steps of:
  • Step 1 Providing a substrate on which a black photoresist layer is formed, vacuum drying and prebaking the black photoresist layer to remove the black lithography a part of the solvent in the glue layer;
  • Step 2 coating a black photoresist layer to form a transparent photoresist layer
  • Step 3 providing a mask, the mask having a plurality of first, second, and third patterns of different gray scales, and exposing the transparent photoresist layer by using ultraviolet light through a mask;
  • Step 4 performing a developing process on the black photoresist layer and the transparent photoresist layer to obtain a plurality of transparent retaining walls corresponding to the first pattern belonging to the transparent photoresist layer, corresponding to the second graphic And a plurality of auxiliary spacers on the transparent barrier wall, and a plurality of main spacers corresponding to the third pattern and located on the transparent barrier wall, and at the same time obtaining a shelter belonging to the black photoresist layer a plurality of black retaining walls covered by a plurality of transparent retaining walls;
  • the height of the main spacer is greater than the height of the auxiliary spacer
  • the plurality of black retaining walls and the plurality of transparent retaining walls thereon form a plurality of pixel retaining walls, and a plurality of red sub-pixel regions, a plurality of green sub-pixel regions, and a plurality of Blue sub-pixel area;
  • Step 5 baking the black retaining wall, the transparent retaining wall, the auxiliary spacer, and the main spacer to remove most of the solvent, and enhance the curing degree and adhesion;
  • Step 6 Forming red, green, and blue quantum dot layers on the base substrate corresponding to the red, green, and blue sub-pixel regions by inkjet printing.
  • the black photoresist layer is formed by slit coating or spin coating, and the black photoresist layer has a thickness of 0.5 to 2 ⁇ m.
  • the transparent photoresist layer is formed by slit coating or spin coating, and the transparent photoresist layer has a thickness of 0.5 to 5 ⁇ m.
  • the material of the transparent photoresist layer and the photoresist component in the black photoresist layer are positive photoresists, and the light transmittances of the first, second, and third patterns on the mask are sequentially lowered. .
  • the material of the transparent photoresist layer and the photoresist component in the black photoresist layer are negative photoresist, and the light transmittances of the third, second, and first patterns on the mask are sequentially lowered. .
  • the substrate provided in the step 1 is a TFT array substrate, and the substrate is provided on the substrate TFT array.
  • the quantum dot color film substrate obtained in the step 6 is used in a liquid crystal display device;
  • the liquid crystal display device includes a liquid crystal display panel and a backlight module located under the liquid crystal display panel.
  • the liquid crystal display panel includes an upper substrate, a lower substrate under the upper substrate, and a space between the upper and lower substrates. a liquid crystal layer, an upper polarizer, and a lower polarizer;
  • the quantum dot color film substrate is used as a lower substrate of a liquid crystal display panel, and the lower polarizer is disposed on a side of the lower substrate adjacent to the liquid crystal layer.
  • the quantum dot color film substrate obtained in the step 6 is used in a liquid crystal display device;
  • the liquid crystal display device includes a liquid crystal display panel and a backlight module located under the liquid crystal display panel.
  • the liquid crystal display panel includes an upper substrate, a lower substrate under the upper substrate, and a space between the upper and lower substrates. a liquid crystal layer, an upper polarizer, and a lower polarizer;
  • the lower substrate is a TFT array substrate
  • the quantum dot color film substrate is used as an upper substrate of a liquid crystal display panel
  • the upper polarizer is disposed on a side of the upper substrate adjacent to the liquid crystal layer.
  • the lower polarizer is disposed on a side of the lower substrate away from the liquid crystal layer.
  • the red, green, and blue quantum dot layers are formed by quantum dot inks respectively containing red quantum dots, green quantum dots, and blue quantum dots.
  • the invention also provides a method for manufacturing a quantum dot color film substrate, comprising the following steps:
  • Step 1 Providing a substrate on which a black photoresist layer is formed, vacuum drying and prebaking the black photoresist layer to remove the black lithography a part of the solvent in the glue layer;
  • Step 2 coating a black photoresist layer to form a transparent photoresist layer
  • Step 3 providing a mask, the mask having a plurality of first, second, and third patterns of different gray scales, and exposing the transparent photoresist layer by using ultraviolet light through a mask;
  • Step 4 performing a developing process on the black photoresist layer and the transparent photoresist layer to obtain a plurality of transparent retaining walls corresponding to the first pattern belonging to the transparent photoresist layer, corresponding to the second graphic And a plurality of auxiliary spacers on the transparent barrier wall, and a plurality of main spacers corresponding to the third pattern and located on the transparent barrier wall, and at the same time obtaining a shelter belonging to the black photoresist layer a plurality of black retaining walls covered by a plurality of transparent retaining walls;
  • the height of the main spacer is greater than the height of the auxiliary spacer
  • the plurality of black retaining walls and the plurality of transparent retaining walls thereon form a plurality of pixel retaining walls, and a plurality of red sub-pixel regions, a plurality of green sub-pixel regions, and a plurality of Blue sub-pixel area;
  • Step 5 baking the black retaining wall, the transparent retaining wall, the auxiliary spacer, and the main spacer to remove most of the solvent, and enhance the curing degree and adhesion;
  • Step 6 Forming patterned red, green, and blue quantum dot layers on the base substrate corresponding to the red, green, and blue sub-pixel regions by inkjet printing;
  • the black photoresist layer is formed by slit coating or spin coating, the thickness of the black photoresist layer is 0.5 ⁇ 2 ⁇ m;
  • the transparent photoresist layer is formed by slit coating or spin coating, the transparent photoresist layer has a thickness of 0.5 ⁇ 5 ⁇ m;
  • the red, green, and blue quantum dot layers are formed by quantum dot inks respectively containing red quantum dots, green quantum dots, and blue quantum dots.
  • the method for fabricating the quantum dot color film substrate of the present invention is to sequentially form a black photoresist layer and a transparent photoresist layer on the substrate, and then use different gray scales on the mask.
  • the second and third graphics pattern the black photoresist layer and the transparent photoresist layer to obtain a plurality of transparent retaining walls corresponding to the first graphic, corresponding to the second graphic, and located in the transparent block
  • the black retaining wall and the plurality of transparent retaining walls on the same form a pixel retaining wall; then, the inkjet printing method is used to form a patterned quantum dot layer in the sub-pixel area enclosed by the plurality of pixel retaining walls, and the inkjet printing is performed.
  • the precision is greatly improved; the manufacturing method of the quantum dot
  • 1 is a flow chart showing a method of fabricating a quantum dot color film substrate of the present invention
  • FIG. 2 is a schematic view showing the first step of the method for fabricating the quantum dot color film substrate of the present invention
  • 3 is a schematic view showing the second step of the method for fabricating the quantum dot color film substrate of the present invention.
  • FIG. 4 is a schematic view showing a step 3 of a method for fabricating a quantum dot color film substrate of the present invention
  • FIG. 5 is a schematic view showing a step 4 of a method for fabricating a quantum dot color film substrate of the present invention
  • Fig. 6 is a schematic view showing the sixth step of the method for fabricating the quantum dot color film substrate of the present invention.
  • the present invention first provides a method for fabricating a quantum dot color film substrate, comprising the following steps:
  • Step 1 as shown in FIG. 2, a base substrate 11 is provided, and a black photoresist layer 12 is coated on the base substrate 11, and the black photoresist layer 12 is vacuum dried and pre-processed. Baking to remove a portion of the solvent in the black photoresist layer 12;
  • the black photoresist layer 12 is formed by slit coating or spin coating, and the black photoresist layer 12 has a thickness of 0.5 to 2 ⁇ m.
  • Step 2 as shown in FIG. 3, coating a black photoresist layer 12 on the black photoresist layer 12;
  • the transparent photoresist layer 13 is formed by slit coating or spin coating, and the transparent photoresist layer 13 has a thickness of 0.5 to 5 ⁇ m.
  • Step 3 as shown in FIG. 4, a mask 50 is provided, and the first, second, and third patterns 51, 52, and 53 having a plurality of different gray scales on the mask 50 are irradiated with ultraviolet light through the mask 50.
  • the transparent photoresist layer 13 is exposed to cause an illumination reaction in the transparent photoresist layer 13.
  • the portion of the pattern corresponding to the light transmittance of the mask 50 has the lowest degree of photoreaction, and corresponds to the mask 50.
  • the degree of photoreaction of the pattern in the middle of the transmittance is second, and the portion of the pattern corresponding to the highest light transmittance on the mask 50 has the highest degree of photoreaction;
  • the mask plates 50 are first, second, and third.
  • the light transmittances of the patterns 51, 52, and 53 are sequentially decreased;
  • the mask board 50 is third, second, and first.
  • the light transmittances of the patterns 53, 52, and 51 are sequentially lowered.
  • Step 4 performing a development process on the black photoresist layer 12 and the transparent photoresist layer 13 to obtain a plurality of strips corresponding to the first pattern 51 belonging to the transparent photoresist layer 13.
  • a transparent retaining wall 131 a plurality of auxiliary spacers 132 corresponding to the second pattern 52 and located on the transparent retaining wall 131, and a plurality of mains corresponding to the third pattern 53 and located on the transparent retaining wall 131 a spacer 133, at the same time, a plurality of black retaining walls 121 belonging to the black photoresist layer 12 covered by the plurality of transparent retaining walls 131;
  • the height of the main spacer 133 is greater than the height of the auxiliary spacer 132.
  • the plurality of black retaining walls 121 and the plurality of transparent retaining walls 131 thereof constitute a plurality of pixel retaining walls 100, and a plurality of red sub-pixel regions and a plurality of green sub-images are enclosed on the base substrate 11 a prime region and a plurality of blue sub-pixel regions;
  • the plurality of black retaining walls 121 form a black matrix located at the edge of each sub-pixel region for preventing light leakage; for optical effects, the black matrix cannot be made too thick, and the height of the black retaining wall 121 is not up to
  • the height of the retaining wall required for inkjet printing cannot realize the function of the retaining wall, and the height of the plurality of black retaining walls 121 plus the height of the plurality of transparent retaining walls 131 thereon can satisfy subsequent inkjet printing.
  • the auxiliary spacer 132 and the main spacer 133 are designed to support the upper and lower substrates in order to maintain the thickness of the liquid crystal display panel.
  • the step difference design of the main spacer 133 and the auxiliary spacer 132 is to further improve the anti-pressure capability of the display panel, and increase the margin of the liquid crystal amount;
  • the black retaining wall 121, the transparent retaining wall 131, the auxiliary spacer 132, and the main spacer 133 are formed by two coating processes and one exposure developing process.
  • the traditional process at least two exposure and development processes are reduced, the process efficiency is improved, and the cost is reduced.
  • Step 5 baking the black retaining wall 121, the transparent retaining wall 131, the auxiliary spacer 132, and the main spacer 133 to remove most of the solvent, and enhance the curing degree and adhesion;
  • Step 6 as shown in FIG. 6, forming red, green, and blue quantum dots on the base substrate 11 corresponding to the red, green, and blue sub-pixel regions by inkjet printing.
  • the plurality of pixel retaining walls 100 formed by the plurality of black retaining walls 121 and the plurality of transparent retaining walls 131 thereon greatly improve the precision of inkjet printing
  • the red, green, and blue quantum dot layers 141, 142, and 143 are formed of quantum dot inks including red quantum dots, green quantum dots, and blue quantum dots, respectively, which do not contain reactive groups. It reduces the risk of the quantum dot luminous efficiency dropping or even annihilating.
  • the substrate substrate 11 provided in the step 1 may be a TFT array substrate, and the TFT substrate is disposed on the substrate substrate 11.
  • the quantum dot color film substrate obtained in the step 6 is a COA (Color Filter on).
  • the quantum dot color film substrate can be used in a liquid crystal display device as a lower substrate of a liquid crystal display panel; specifically, the liquid crystal display device includes a liquid crystal display panel and a backlight module located under the liquid crystal display panel
  • the liquid crystal display panel includes an upper substrate, a lower substrate under the upper substrate, a liquid crystal layer between the upper and lower substrates, an upper polarizer, and a lower polarizer; and the quantum dot color film substrate
  • the lower substrate of the liquid crystal display panel is disposed on a side of the lower substrate adjacent to the liquid crystal layer; that is, the backlight emitted by the backlight module passes through the TFT array and the quantum dot layer 141/142/143 , lower polarizer, liquid crystal layer, And the upper polarizer is emitted.
  • the base substrate 11 provided in the step 1 may be a non-TFT array substrate, and the quantum dot color film substrate obtained in the step 6 is a non-COA structure, and the quantum dot color film substrate can be used for a liquid crystal display device.
  • the liquid crystal display device includes a liquid crystal display panel and a backlight module located under the liquid crystal display panel.
  • the liquid crystal display panel includes an upper substrate and is located under the upper substrate.
  • the lower substrate is a TFT array substrate
  • the quantum dot color film substrate is used as an upper substrate of the liquid crystal display panel
  • the upper polarizer is disposed on a side of the upper substrate adjacent to the liquid crystal layer
  • the lower polarizer is disposed on a side of the lower substrate away from the liquid crystal layer; that is, the backlight module sends out The backlight is emitted through the lower polarizer, the TFT array, the liquid crystal layer, the upper polarizer, and the quantum dot color layer 141/142/143.
  • the method for fabricating the quantum dot color film substrate of the present invention firstly forms a black photoresist layer and a transparent photoresist layer on the substrate substrate, and then uses the first gray scale on the mask. And patterning the black photoresist layer and the transparent photoresist layer to obtain a plurality of transparent retaining walls corresponding to the first pattern, corresponding to the second graphic, and located at the transparent retaining wall An auxiliary spacer thereon, and a main spacer corresponding to the third pattern and located on the transparent barrier wall, and simultaneously obtaining a plurality of black retaining walls covered by the plurality of transparent retaining walls; The retaining wall and the plurality of transparent retaining walls thereon form a plurality of pixel retaining walls; and then form a patterned quantum dot layer by inkjet printing in a sub-pixel area surrounded by a plurality of pixel retaining walls, inkjet printing
  • the precision of the quantum dot color film substrate is simple, the process is short, the equipment cost is low, and the quantum dot

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Abstract

一种量子点彩膜基板的制作方法，先在衬底基板（11）上依次涂布形成黑色光刻胶层（12）和透明光刻胶层（13），然后利用掩模板（50）上不同灰度的第一、第二、第三图形（51、52、53）图形化黑色光刻胶层（12）和透明光刻胶层（13），得到对应第一图形（51）的数条透明档墙（131）、对应第二图形（52）且位于透明档墙（131）上的辅助间隔物（132）、及对应第三图形（53）且位于透明档墙（131）上的主间隔物（133），同时得到被数条透明档墙（131）所覆盖的数条黑色档墙（121）；数条黑色档墙（121）、及其上的数条透明档墙（131）共同构成像素档墙（100）；然后在数条像素档墙（100）围出的子像素区域内采用喷墨打印的方式形成图形化量子点层，喷墨打印的精度得到较大提升。

Description

量子点彩膜基板的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种量子点彩膜基板的制作方法。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display，TFT-LCD)由于色彩度高、体积小、功耗低等优势，在目前平板显示领域占主流地位。作为液晶显示器重要组件之一的彩色滤光片(Color filter)，主要通过RGB彩色光阻层的滤光实现显色。
随着显示技术的不断发展，人们对显示装置的显示质量要求也越来越高。量子点材料(Quantum Dots，简称QDs)是指粒径在1-100nm的半导体晶粒。由于QDs的粒径较小，小于或者接近相应体材料的激子波尔半径，产生量子限域效应，本体材料连续的能带结构会转变为分立的能级结构，在外部光源的激发下，电子会发生跃迁，发射荧光。
QDs这种特殊的分立能级结构使其半波宽较窄，因而可发出较高纯度的单色光，相比于传统显示器具有更高的发光效率。同时，由于QDs的能级带隙，受其尺寸影响较大，可以通过调控QDs的尺寸或使用不同成分的QDs来激发出不同波长的光。在彩膜基板上引入QDs以代替传统的彩色光阻，可以大幅度的提高TFT-LCD的色域和穿透率，带来更好的显示效果。
目前，TFT-LCD中的RGB彩色光阻层主要是由不同颜色的光刻胶采用黄光工艺，通过曝光显影成型，光刻胶成分中的光引发剂为一些活性基团，若把QDs分散于光刻胶中，QDs为纳米颗粒，十分容易与引发剂发生反应而导致发光效率急剧降低甚至猝灭，影响QDs的性能，因此开发高发光效率的光刻胶材料难度很大，另外，黄光工艺中显影制程会把不需要的部分通过显影去除，量子点材料浪费情况严重。
而喷墨打印(inkjet printing)的方式可以直接把含有QDs的量子点油墨直接打印于指定的位置，理论上不会造成材料的浪费，但在打印过程中量子点油墨会形成圆形的打印点，为了能够在指定地方沉积量子点油墨，并且形成子像素的形状，一般都需要设置挡墙，然后把量子点油墨打印于挡墙所形成的孔中。
发明内容
本发明的目的在于提供一种量子点彩膜基板的制作方法，利用掩膜板上的灰度图形，通过一次曝光显影，形成像素挡墙、主间隔物、及辅助间隔物，然后在像素挡墙围出的区域内通过喷墨打印的方式形成图形化的量子点层，工艺简单，耗时短，设备成本较低，量子点材料利用率高。
为实现上述目的，本发明提供了一种彩膜基板的制作方法，包括以下步骤：
步骤1、提供一衬底基板，在所述衬底基板上涂布形成一层黑色光刻胶层，对所述黑色光刻胶层进行真空干燥及预烘烤，以除去所述黑色光刻胶层中的部分溶剂；
步骤2、在所述黑色光刻胶层上涂布形成一层透明光刻胶层；
步骤3、提供掩模板，所述掩模板上具有数个不同灰度的第一、第二、第三图形，采用紫外光通过掩模板对所述透明光刻胶层进行曝光；
步骤4、对所述黑色光刻胶层及透明光刻胶层进行显影制程，得到属于所述透明光刻胶层的对应所述第一图形的数条透明挡墙、对应所述第二图形且位于所述透明挡墙上的数个辅助间隔物、及对应所述第三图形且位于所述透明挡墙上的数个主间隔物，同时得到属于所述黑色光刻胶层的被所述数条透明挡墙所覆盖的数条黑色挡墙；
其中，所述主间隔物的高度大于所述辅助间隔物的高度；
所述数条黑色挡墙、及其上的数条透明挡墙构成数条像素挡墙，在所述衬底基板上围出数个红色子像素区域、数个绿色子像素区域、及数个蓝色子像素区域；
步骤5、对所述黑色挡墙、透明挡墙、辅助间隔物、及主间隔物进行烘烤，以除去其中大部分溶剂，增强其固化程度和附着力；
步骤6、在所述衬底基板上对应所述红色、绿色、及蓝色子像素区域采用喷墨打印的方式分别形成图形化的红色、绿色、及蓝色量子点层。
所述步骤1中，通过狭缝涂布或旋转涂布的方式形成所述黑色光刻胶层，所述黑色光刻胶层的厚度为0.5～2μm。
所述步骤2中，通过狭缝涂布或旋转涂布的方式形成所述透明光刻胶层，所述透明光刻胶层的厚度为0.5～5μm。
所述透明光刻胶层的材料及黑色光刻胶层中的光刻胶成分为正型光刻胶，所述掩膜板上第一、第二、第三图形的光透过率依次降低。
所述透明光刻胶层的材料及黑色光刻胶层中的光刻胶成分为负型光刻胶，所述掩膜板上第三、第二、第一图形的光透过率依次降低。
所述步骤1中提供的衬底基板为TFT阵列基板，所述衬底基板上设有 TFT阵列。
所述步骤6中得到量子点彩膜基板用于液晶显示装置中；
所述液晶显示装置包括液晶显示面板、及位于液晶显示面板下方的背光模组；所述液晶显示面板包括上基板、位于所述上基板下方的下基板、位于所述上、下基板之间的液晶层、上偏光片、及下偏光片；
所述量子点彩膜基板用作液晶显示面板的下基板，所述下偏光片设置于所述下基板上靠近所述液晶层的一侧。
所述步骤6中得到量子点彩膜基板用于液晶显示装置中；
所述液晶显示装置包括液晶显示面板、及位于液晶显示面板下方的背光模组；所述液晶显示面板包括上基板、位于所述上基板下方的下基板、位于所述上、下基板之间的液晶层、上偏光片、及下偏光片；
所述下基板为TFT阵列基板，所述量子点彩膜基板用作液晶显示面板的上基板，所述上偏光片设置于所述上基板上靠近所述液晶层的一侧。
所述下偏光片设置于所述下基板上远离所述液晶层的一侧。
所述步骤6中，所述红色、绿色、及蓝色量子点层由分别包含红色量子点、绿色量子点、及蓝色量子点的量子点油墨所形成。
本发明还提供一种量子点彩膜基板的制作方法，包括以下步骤：
步骤1、提供一衬底基板，在所述衬底基板上涂布形成一层黑色光刻胶层，对所述黑色光刻胶层进行真空干燥及预烘烤，以除去所述黑色光刻胶层中的部分溶剂；
步骤2、在所述黑色光刻胶层上涂布形成一层透明光刻胶层；
步骤3、提供掩模板，所述掩模板上具有数个不同灰度的第一、第二、第三图形，采用紫外光通过掩模板对所述透明光刻胶层进行曝光；
步骤4、对所述黑色光刻胶层及透明光刻胶层进行显影制程，得到属于所述透明光刻胶层的对应所述第一图形的数条透明挡墙、对应所述第二图形且位于所述透明挡墙上的数个辅助间隔物、及对应所述第三图形且位于所述透明挡墙上的数个主间隔物，同时得到属于所述黑色光刻胶层的被所述数条透明挡墙所覆盖的数条黑色挡墙；
其中，所述主间隔物的高度大于所述辅助间隔物的高度；
所述数条黑色挡墙、及其上的数条透明挡墙构成数条像素挡墙，在所述衬底基板上围出数个红色子像素区域、数个绿色子像素区域、及数个蓝色子像素区域；
步骤5、对所述黑色挡墙、透明挡墙、辅助间隔物、及主间隔物进行烘烤，以除去其中大部分溶剂，增强其固化程度和附着力；
步骤6、在所述衬底基板上对应所述红色、绿色、及蓝色子像素区域采用喷墨打印的方式分别形成图形化的红色、绿色、及蓝色量子点层；
其中，所述步骤1中，通过狭缝涂布或旋转涂布的方式形成所述黑色光刻胶层，所述黑色光刻胶层的厚度为0.5～2μm；
其中，所述步骤2中，通过狭缝涂布或旋转涂布的方式形成所述透明光刻胶层，所述透明光刻胶层的厚度为0.5～5μm；
其中，所述步骤6中，所述红色、绿色、及蓝色量子点层由分别包含红色量子点、绿色量子点、及蓝色量子点的量子点油墨所形成。
本发明的有益效果：本发明的量子点彩膜基板的制作方法，先在衬底基板上依次涂布形成黑色光刻胶层和透明光刻胶层，然后利用掩模板上不同灰度的第一、第二、第三图形图形化所述黑色光刻胶层和透明光刻胶层，得到对应所述第一图形的数条透明挡墙、对应所述第二图形且位于所述透明挡墙上的辅助间隔物、及对应所述第三图形且位于所述透明挡墙上的主间隔物，同时得到被所述数条透明挡墙所覆盖的数条黑色挡墙；所述数条黑色挡墙、及其上的数条透明挡墙共同构成像素挡墙；然后在数条像素挡墙围出的子像素区域内采用喷墨打印的方式形成图形化量子点层，喷墨打印的精度得到较大提升；该量子点彩膜基板的制作方法，工艺简单，耗时短，设备成本较低，量子点材料利用率高。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的量子点彩膜基板的制作方法的流程图；
图2为本发明的量子点彩膜基板的制作方法的步骤1的示意图；
图3为本发明的量子点彩膜基板的制作方法的步骤2的示意图；
图4为本发明的量子点彩膜基板的制作方法的步骤3的示意图；
图5为本发明的量子点彩膜基板的制作方法的步骤4的示意图；
图6为本发明的量子点彩膜基板的制作方法的步骤6的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种量子点彩膜基板的制作方法，包括以下步骤：
步骤1、如图2所示，提供一衬底基板11，在所述衬底基板11上涂布形成一层黑色光刻胶层12，对所述黑色光刻胶层12进行真空干燥及预烘烤，以除去所述黑色光刻胶层12中的部分溶剂；
具体的，通过狭缝涂布或旋转涂布的方式形成所述黑色光刻胶层12，所述黑色光刻胶层12的厚度为0.5～2μm。
步骤2、如图3所示，在所述黑色光刻胶层12上涂布形成一层透明光刻胶层13；
具体的，通过狭缝涂布或旋转涂布的方式形成所述透明光刻胶层13，所述透明光刻胶层13的厚度为0.5～5μm。
步骤3、如图4所示，提供掩模板50，所述掩模板50上具有数个不同灰度的第一、第二、第三图形51、52、53，采用紫外光通过掩模板50对所述透明光刻胶层13进行曝光，促使所述透明光刻胶层13内发生光照反应，对应掩模板50上光透过率最低的图形的部分光反应程度最低，对应掩模板50上光透过率中间的图形的部分光反应程度次之，对应掩模板50上光透过率最高的图形的部分光反应程度最高；
具体的，若所述透明光刻胶层13的材料及黑色光刻胶层12中的光刻胶成分为正型光刻胶，则所述掩膜板50上第一、第二、第三图形51、52、53的光透过率依次降低；
具体的，若所述透明光刻胶层13的材料及黑色光刻胶层12中的光刻胶成分为负型光刻胶，则所述掩膜板50上第三、第二、第一图形53、52、51的光透过率依次降低。
步骤4、如图5所示，对所述黑色光刻胶层12及透明光刻胶层13进行显影制程，得到属于所述透明光刻胶层13的对应所述第一图形51的数条透明挡墙131、对应所述第二图形52且位于所述透明挡墙131上的数个辅助间隔物132、及对应所述第三图形53且位于所述透明挡墙131上的数个主间隔物133，同时得到属于所述黑色光刻胶层12的被所述数条透明挡墙131所覆盖的数条黑色挡墙121；
其中，所述主间隔物133的高度大于所述辅助间隔物132的高度。
所述数条黑色挡墙121、及其上的数条透明挡墙131共同构成数条像素挡墙100，在所述衬底基板11上围出数个红色子像素区域、数个绿色子像 素区域、及数个蓝色子像素区域；
具体的，所述数条黑色挡墙121构成黑色矩阵，位于各个子像素区域边缘，用于防止漏光；为光学效果考虑，黑色矩阵不能制作太厚，所述黑色挡墙121的高度达不到喷墨打印所需的挡墙的高度，不能实现挡墙的功能，而所述数条黑色挡墙121的高度加上其上的数条透明挡墙131的高度则可满足后续的喷墨打印时所需的挡墙高度，从而实现挡墙的功能；
具体的，所述辅助间隔物132、及主间隔物133的设计是为了维持液晶显示面板的盒厚，起到支撑上、下基板的作用。具体的，所述主间隔物133和辅助间隔物132的段差设计是为了进一步提高显示面板的抗指压能力，以及提高液晶量的余量(margin)；
本发明的量子点彩膜基板的制作方法中，黑色挡墙121、透明挡墙131、辅助间隔物132、及主间隔物133通过两次涂布工艺、及一次曝光显影制程所形成，相较于传统制程，至少减少了两次曝光显影过程，提高了制程效率，降低了成本。
步骤5、对所述黑色挡墙121、透明挡墙131、辅助间隔物132、及主间隔物133进行烘烤，以除去其中的大部分溶剂，增强其固化程度和附着力；
步骤6、如图6所示，在所述衬底基板11上对应所述红色、绿色、及蓝色子像素区域采用喷墨打印的方式分别形成图形化的红色、绿色、及蓝色量子点层141、142、143；
具体的，该步骤中，由所述数条黑色挡墙121、及其上的数条透明挡墙131所构成的数条像素挡墙100，大大提高了喷墨打印的精度，另外，所述红色、绿色、及蓝色量子点层141、142、143由分别包含红色量子点、绿色量子点、及蓝色量子点的量子点油墨所形成，所述量子点油墨中不含活性基团，降低了量子点发光效率急降甚至猝灭的风险。
具体的，所述步骤1中提供的衬底基板11可以为TFT阵列基板，所述衬底基板11上设有TFT阵列，则所述步骤6中得到量子点彩膜基板为COA(Color Filter on Array)结构，所述量子点彩膜基板可用于液晶显示装置中，用作液晶显示面板的下基板；具体的，所述液晶显示装置包括液晶显示面板、及位于液晶显示面板下方的背光模组；所述液晶显示面板包括上基板、位于所述上基板下方的下基板、位于所述上、下基板之间的液晶层、上偏光片、及下偏光片；所述量子点彩膜基板用作液晶显示面板的下基板，所述下偏光片设置于所述下基板上靠近所述液晶层的一侧；即所述背光模组发出的背光经过TFT阵列、量子点层141/142/143、下偏光片、液晶层、 及上偏光片而射出。
具体的，所述步骤1中提供的衬底基板11可以为非TFT阵列基板，则所述步骤6中得到量子点彩膜基板为非COA结构，所述量子点彩膜基板可用于液晶显示装置中，用作液晶显示面板的上基板；具体的，所述液晶显示装置包括液晶显示面板、及位于液晶显示面板下方的背光模组；所述液晶显示面板包括上基板、位于所述上基板下方的下基板、位于所述上、下基板之间的液晶层、上偏光片、及下偏光片；所述下基板为TFT阵列基板，所述量子点彩膜基板用作液晶显示面板的上基板，所述上偏光片设置于所述上基板上靠近所述液晶层的一侧；所述下偏光片设置于所述下基板上远离所述液晶层的一侧；即所述背光模组发出的背光经过下偏光片、TFT阵列、液晶层、上偏光片、及量子点彩层141/142/143而射出。
综上所述，本发明的量子点彩膜基板的制作方法，先在衬底基板上依次涂布形成黑色光刻胶层和透明光刻胶层，然后利用掩模板上不同灰度的第一、第二、第三图形图形化所述黑色光刻胶层和透明光刻胶层，得到对应所述第一图形的数条透明挡墙、对应所述第二图形且位于所述透明挡墙上的辅助间隔物、及对应所述第三图形且位于所述透明挡墙上的主间隔物，同时得到被所述数条透明挡墙所覆盖的数条黑色挡墙；所述数条黑色挡墙、及其上的数条透明挡墙共同构成数条像素挡墙；然后在数条像素挡墙围出的子像素区域内采用喷墨打印的方式形成图形化量子点层，喷墨打印的精度得到较大提升；该量子点彩膜基板的制作方法，工艺简单，耗时短，设备成本较低，量子点材料利用率高。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (17)

  1. 一种量子点彩膜基板的制作方法，包括以下步骤：
    步骤1、提供一衬底基板，在所述衬底基板上涂布形成一层黑色光刻胶层，对所述黑色光刻胶层进行真空干燥及预烘烤，以除去所述黑色光刻胶层中的部分溶剂；
    步骤2、在所述黑色光刻胶层上涂布形成一层透明光刻胶层；
    步骤3、提供掩模板，所述掩模板上具有数个不同灰度的第一、第二、第三图形，采用紫外光通过掩模板对所述透明光刻胶层进行曝光；
    步骤4、对所述黑色光刻胶层及透明光刻胶层进行显影制程，得到属于所述透明光刻胶层的对应所述第一图形的数条透明挡墙、对应所述第二图形且位于所述透明挡墙上的数个辅助间隔物、及对应所述第三图形且位于所述透明挡墙上的数个主间隔物，同时得到属于所述黑色光刻胶层的被所述数条透明挡墙所覆盖的数条黑色挡墙；
    其中，所述主间隔物的高度大于所述辅助间隔物的高度；
    所述数条黑色挡墙、及其上的数条透明挡墙构成数条像素挡墙，在所述衬底基板上围出数个红色子像素区域、数个绿色子像素区域、及数个蓝色子像素区域；
    步骤5、对所述黑色挡墙、透明挡墙、辅助间隔物、及主间隔物进行烘烤，以除去其中大部分溶剂，增强其固化程度和附着力；
    步骤6、在所述衬底基板上对应所述红色、绿色、及蓝色子像素区域采用喷墨打印的方式分别形成图形化的红色、绿色、及蓝色量子点层。
  2. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述步骤1中，通过狭缝涂布或旋转涂布的方式形成所述黑色光刻胶层，所述黑色光刻胶层的厚度为0.5～2μm。
  3. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述步骤2中，通过狭缝涂布或旋转涂布的方式形成所述透明光刻胶层，所述透明光刻胶层的厚度为0.5～5μm。
  4. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述透明光刻胶层的材料及黑色光刻胶层中的光刻胶成分为正型光刻胶，所述掩膜板上第一、第二、第三图形的光透过率依次降低。
  5. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述透明光刻胶层的材料及黑色光刻胶层中的光刻胶成分为负型光刻胶，所述掩膜 板上第三、第二、第一图形的光透过率依次降低。
  6. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述步骤1中提供的衬底基板为TFT阵列基板，所述衬底基板上设有TFT阵列。
  7. 如权利要求6所述的量子点彩膜基板的制作方法，其中，所述步骤6中得到量子点彩膜基板用于液晶显示装置中；
    所述液晶显示装置包括液晶显示面板、及位于液晶显示面板下方的背光模组；所述液晶显示面板包括上基板、位于所述上基板下方的下基板、位于所述上、下基板之间的液晶层、上偏光片、及下偏光片；
    所述量子点彩膜基板用作液晶显示面板的下基板，所述下偏光片设置于所述下基板上靠近所述液晶层的一侧。
  8. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述步骤6中得到量子点彩膜基板用于液晶显示装置中；
    所述液晶显示装置包括液晶显示面板、及位于液晶显示面板下方的背光模组；所述液晶显示面板包括上基板、位于所述上基板下方的下基板、位于所述上、下基板之间的液晶层、上偏光片、及下偏光片；
    所述下基板为TFT阵列基板，所述量子点彩膜基板用作液晶显示面板的上基板，所述上偏光片设置于所述上基板上靠近所述液晶层的一侧。
  9. 如权利要求8所述的量子点彩膜基板的制作方法，其中，所述下偏光片设置于所述下基板上远离所述液晶层的一侧。
  10. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述步骤6中，所述红色、绿色、及蓝色量子点层由分别包含红色量子点、绿色量子点、及蓝色量子点的量子点油墨所形成。
  11. 一种量子点彩膜基板的制作方法，包括以下步骤：
    步骤1、提供一衬底基板，在所述衬底基板上涂布形成一层黑色光刻胶层，对所述黑色光刻胶层进行真空干燥及预烘烤，以除去所述黑色光刻胶层中的部分溶剂；
    步骤2、在所述黑色光刻胶层上涂布形成一层透明光刻胶层；
    步骤3、提供掩模板，所述掩模板上具有数个不同灰度的第一、第二、第三图形，采用紫外光通过掩模板对所述透明光刻胶层进行曝光；
    步骤4、对所述黑色光刻胶层及透明光刻胶层进行显影制程，得到属于所述透明光刻胶层的对应所述第一图形的数条透明挡墙、对应所述第二图形且位于所述透明挡墙上的数个辅助间隔物、及对应所述第三图形且位于所述透明挡墙上的数个主间隔物，同时得到属于所述黑色光刻胶层的被所述数条透明挡墙所覆盖的数条黑色挡墙；
    其中，所述主间隔物的高度大于所述辅助间隔物的高度；
    所述数条黑色挡墙、及其上的数条透明挡墙构成数条像素挡墙，在所述衬底基板上围出数个红色子像素区域、数个绿色子像素区域、及数个蓝色子像素区域；
    步骤5、对所述黑色挡墙、透明挡墙、辅助间隔物、及主间隔物进行烘烤，以除去其中大部分溶剂，增强其固化程度和附着力；
    步骤6、在所述衬底基板上对应所述红色、绿色、及蓝色子像素区域采用喷墨打印的方式分别形成图形化的红色、绿色、及蓝色量子点层；
    其中，所述步骤1中，通过狭缝涂布或旋转涂布的方式形成所述黑色光刻胶层，所述黑色光刻胶层的厚度为0.5～2μm；
    其中，所述步骤2中，通过狭缝涂布或旋转涂布的方式形成所述透明光刻胶层，所述透明光刻胶层的厚度为0.5～5μm；
    其中，所述步骤6中，所述红色、绿色、及蓝色量子点层由分别包含红色量子点、绿色量子点、及蓝色量子点的量子点油墨所形成。
  12. 如权利要求11所述的量子点彩膜基板的制作方法，其中，所述透明光刻胶层的材料及黑色光刻胶层中的光刻胶成分为正型光刻胶，所述掩膜板上第一、第二、第三图形的光透过率依次降低。
  13. 如权利要求11所述的量子点彩膜基板的制作方法，其中，所述透明光刻胶层的材料及黑色光刻胶层中的光刻胶成分为负型光刻胶，所述掩膜板上第三、第二、第一图形的光透过率依次降低。
  14. 如权利要求11所述的量子点彩膜基板的制作方法，其中，所述步骤1中提供的衬底基板为TFT阵列基板，所述衬底基板上设有TFT阵列。
  15. 如权利要求14所述的量子点彩膜基板的制作方法，其中，所述步骤6中得到量子点彩膜基板用于液晶显示装置中；
    所述液晶显示装置包括液晶显示面板、及位于液晶显示面板下方的背光模组；所述液晶显示面板包括上基板、位于所述上基板下方的下基板、位于所述上、下基板之间的液晶层、上偏光片、及下偏光片；
    所述量子点彩膜基板用作液晶显示面板的下基板，所述下偏光片设置于所述下基板上靠近所述液晶层的一侧。
  16. 如权利要求11所述的量子点彩膜基板的制作方法，其中，所述步骤6中得到量子点彩膜基板用于液晶显示装置中；
    所述液晶显示装置包括液晶显示面板、及位于液晶显示面板下方的背光模组；所述液晶显示面板包括上基板、位于所述上基板下方的下基板、位于所述上、下基板之间的液晶层、上偏光片、及下偏光片；
    所述下基板为TFT阵列基板，所述量子点彩膜基板用作液晶显示面板的上基板，所述上偏光片设置于所述上基板上靠近所述液晶层的一侧。
  17. 如权利要求16所述的量子点彩膜基板的制作方法，其中，所述下偏光片设置于所述下基板上远离所述液晶层的一侧。
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