WO2017069005A1 - Procédé de fabrication de dispositif à semi-conducteur de puissance et dispositif à semi-conducteur de puissance - Google Patents

Procédé de fabrication de dispositif à semi-conducteur de puissance et dispositif à semi-conducteur de puissance Download PDF

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Publication number
WO2017069005A1
WO2017069005A1 PCT/JP2016/079968 JP2016079968W WO2017069005A1 WO 2017069005 A1 WO2017069005 A1 WO 2017069005A1 JP 2016079968 W JP2016079968 W JP 2016079968W WO 2017069005 A1 WO2017069005 A1 WO 2017069005A1
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WIPO (PCT)
Prior art keywords
solder
cooler
magnetic metal
semiconductor device
power semiconductor
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PCT/JP2016/079968
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English (en)
Japanese (ja)
Inventor
修三 荒谷
菊池　正雄
翔 熊田
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三菱電機株式会社
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Publication of WO2017069005A1 publication Critical patent/WO2017069005A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Definitions

  • the present invention relates to a power semiconductor device provided with a cooler.
  • Power semiconductor devices are used to control main power of a wide range of equipment from industrial equipment to home appliances and information terminals, and high reliability is particularly required in transportation equipment. Further, in place of the conventional semiconductor element using silicon (Si), development of a semiconductor device including a semiconductor element using a wide band gap semiconductor such as silicon carbide (SiC) has been advanced. High power density and high temperature operation are progressing.
  • SiC silicon carbide
  • the power consumed by a load such as a motor connected to the power semiconductor device is controlled by the voltage and frequency of the three-phase AC power.
  • an IGBT Insulated Gate Bipolar Transistor
  • IGBT Insulated Gate Bipolar Transistor
  • MOSFET Metal-Oxide-Semiconductor Field-Effect Transistors
  • a heat radiation fin for radiating heat generated from a semiconductor element provided in a power module is provided, and an opening provided in a wall surface of a cooler through which a refrigerant such as water passes through an internal space
  • the heat dissipation from the power module is promoted by inserting the heat radiation fin in the internal space of the cooler that is the refrigerant flow path.
  • the power module is provided with a sealing member such as an O-ring between the flat fin base provided with heat radiation fins and the opening provided in the cooler, and the opening is liquid-tightly sealed.
  • a nickel layer is interposed between the other main surface of the metal base plate in which an insulating substrate including a semiconductor chip is bonded to one main surface and a heat sink that is a cooler.
  • Reactive metal foil formed by laminating an aluminum layer and solder sandwiching the reactive metal foil are provided, and current is passed through the reactive metal foil to cause self-ignition, so that the solder is melted and the metal base The plate and the heat sink were soldered together. Since the solder is instantaneously melted by the reactive metal foil, a metal bond was formed at the interface between the heat sink and the solder, and the interface between the metal base plate and the solder, and the metal base plate and the heat sink were firmly bonded ( For example, see Patent Document 2).
  • the refrigerant is allowed to flow through the internal space of the cooler to actively exhaust heat from the heat radiation fins.
  • it is necessary to reduce the size of the cooler.
  • it is necessary to increase the flow rate of the refrigerant.
  • increasing the flow rate of the refrigerant increases the pressure of the refrigerant.
  • the refrigerant easily leaks from the sealing portion sealed with a sealing member such as an O-ring. Sealing with the O-ring is performed by fastening the cooler and the fin base with bolts, and deforming the O-ring sandwiched between the cooler and the fin base by the fastening force, thereby making the O-ring into the cooler and the fin base.
  • the present invention has been made in order to solve the above-described problems.
  • the sealing portion of the cooler is made to have a high withstand voltage and high heat resistance, and there is no remelting of the bonding material joined to the semiconductor element or the insulating substrate.
  • An object of the present invention is to provide a method for manufacturing a power semiconductor device having high performance and a power semiconductor device.
  • a method for manufacturing a power semiconductor device includes a step of bonding a substrate provided with a semiconductor element on a first bonding surface of a heat sink made of a nonmagnetic metal material with a bonding material, and surrounding an opening. Forming a solder around the opening of the cooler made of metal having a side wall and having a concave cross section; and bringing the second joint surface provided on the back side of the first joint surface of the heat sink into contact with the solder And a step of melting the solder by heat generated by induction heating of the metal member included in the cooler or the metal member provided in the cooler and soldering the heat sink and the cooler.
  • the power semiconductor device includes a cooler made of a metal having a side wall provided around an opening and having a concave cross section, and a nonmagnetic material joined to the side of the opening by solder. And a substrate bonded on the heat sink and provided with a semiconductor element.
  • the sealing portion of the cooler since there is no remelting of the bonding material bonded to the semiconductor element or the insulating substrate, the sealing portion of the cooler has a high breakdown voltage and a high heat resistance, and has high reliability.
  • a method of manufacturing a power semiconductor device can be provided.
  • the sealing portion of the cooler since there is no remelting of the bonding material bonded to the semiconductor element or the insulating substrate, the sealing portion of the cooler has a high withstand voltage and a high heat resistance, and has high reliability.
  • a semiconductor device can be provided.
  • FIG. 1 is a cross-sectional view showing a power semiconductor device according to Embodiment 1 of the present invention.
  • FIG. 2 is a top view showing the power semiconductor device according to the first embodiment of the present invention.
  • the cross-sectional view of FIG. 1 is a cross-sectional view taken along broken line AB in FIG.
  • the power semiconductor device 1 is configured by joining a power module 2 and a cooler 8 with solder 12.
  • the power module 2 includes a semiconductor element 3 formed of silicon or silicon carbide, an insulating substrate 5 in which the semiconductor element 3 is bonded to one surface via a bonding material 4 such as solder or sintered silver, A heat sink 7 formed of a nonmagnetic metal material having high thermal conductivity such as aluminum or aluminum alloy joined to the other surface via a joining material 6 such as solder is provided.
  • the heat sink 7 includes a fin base 71 having a flat surface on which the insulating substrate 5 is bonded with the bonding material 6, and heat radiating fins 72 standing upright on the opposite side of the surface of the fin base 71 to which the insulating substrate 5 is bonded, that is, on the back surface side. Composed.
  • the insulating substrate 5 is configured by providing conductive patterns 52 and 53 on both surfaces of an insulating substrate 51 such as aluminum nitride (AlN). Furthermore, the power module 2 includes a case such as a resin mold that covers the semiconductor element 3 and the insulating substrate 5 (not shown).
  • the cooler 8 is made of a non-magnetic metal material such as aluminum or aluminum alloy, has a refrigerant flow path 11 inside, and has an opening for inserting the radiating fins 72 of the heat sink 7 into the refrigerant flow path 11.
  • a jacket 9 and a magnetic metal portion 10 provided around the opening of the refrigerant jacket 9 so as to be partly exposed to the outside of the cooler 8 and in close contact with the refrigerant jacket 9 in a liquid-tight manner.
  • the inside of the cooler 8 refers to a region below the plane including the surface 10b that is the upper surface of the magnetic metal portion 10 in FIG. 1 and having the refrigerant flow path 11, and the inside of the refrigerant jacket 9 is In FIG.
  • the magnetic metal portion 10 has a surface 10 a that is a side surface and a part of the surface 10 b that is an upper surface exposed outside the cooler 8.
  • FIG. 1 is a cross-sectional view
  • the side wall 91 of the refrigerant jacket 9 seems to exist only on the left and right sides of the radiating fin 72, but the side wall 91 of the refrigerant jacket 9 is on the back side and the front side of the radiating fin 72.
  • the heat dissipating fins 72 are provided so as to surround the four sides. Therefore, the magnetic metal part 10 is also provided so as to surround the heat radiation fin 72 from four directions.
  • the surface 10 a of the magnetic metal part 10 exposed to the outside of the cooler 8 is exposed to the four sides of the cooler 8, and a part of the surface 10 b of the magnetic metal part 10 is outside the heat sink 7. It is exposed to the upper part of the paper surface so as to surround.
  • the refrigerant jacket 9 shown in FIG. 1 has a refrigerant inlet port through which the refrigerant flows into the refrigerant flow path 11 from the outside of the cooler 8 on one side of the side wall 91 on the rear side and the front side of the radiating fin 72, and the other side.
  • a refrigerant outlet for allowing the refrigerant to flow out of the cooler 8 from the refrigerant channel 11 is provided (not shown).
  • a fluid such as water is used as the refrigerant.
  • the refrigerant inlet and the refrigerant outlet are internally threaded, and a pipe having a male threaded portion at the tip is connected to the refrigerant inlet and the refrigerant outlet and is connected to an external device such as a radiator.
  • a coolant such as water flows through the coolant channel 11 in FIG. 1 in the direction perpendicular to the paper surface, the heat of the radiation fins 72 is transferred to the coolant, and the heat generated in the semiconductor element 3 of the power module 2 is exhausted.
  • the magnetic metal part 10 is made of a magnetic metal material such as iron, steel, nickel, cobalt, and ferritic stainless steel, and one surface of the magnetic metal part 10 is welded, brazed, or caulked to the refrigerant jacket 9. It is joined.
  • the heat sink 7 is provided with positioning holes 13 that are used when the heat sink 7 and the magnetic metal portion 10 are joined with the solder 12.
  • the positioning hole 13 is provided outside a case (not shown) that protects the semiconductor element 3 and the insulating substrate 5.
  • the positioning hole 13 is provided through the front and back of the heat sink 7, and the positioning hole 14 is also provided in the cooler 8 at a position corresponding to the positioning hole 13 (see FIGS. 4 and 5).
  • the positioning hole 14 provided in the cooler 8 penetrates the magnetic metal part 10 and reaches the refrigerant jacket 9.
  • the positioning hole 13 and the positioning hole 14 are located at the power semiconductor from the position where the solder 12 is provided. It is provided outside the device 1.
  • solder 12 is provided along the magnetic metal portion 10 between the heat sink 7 of the power module 2 and the magnetic metal portion 10 of the cooler 8.
  • the power semiconductor device 1 is configured by being liquid-tightly connected to the space 10. Since the space between the heat sink 7 and the solder 12 and between the magnetic metal portion 10 and the solder 12 are sealed in a liquid-tight manner by metal bonding, the opening portion of the refrigerant jacket 9 is sealed with a high pressure resistance and a high heat resistance. Is done.
  • the heat transfer coefficient from the heat radiation fins 72 to the refrigerant increases as the flow rate of the refrigerant increases, and increases as the temperature difference between the heat dissipation fins 72 and the refrigerant increases.
  • the refrigerant flow Since the pressure of the refrigerant flowing through the passage 11 can be increased to increase the flow velocity of the refrigerant, the heat transfer rate from the radiating fins 72 to the refrigerant is increased, and sufficient exhaust heat performance is achieved even if the size of the radiating fins 72 is reduced. Is obtained. Moreover, since the sealing part of the cooler 8 is soldered by the solder 12, the heat resistance is high, and the semiconductor element 3 can be operated at a high temperature. Therefore, the temperature difference between the heat radiation fin 72 and the refrigerant is increased, Since the heat transfer coefficient from the radiation fins 72 to the refrigerant can be further increased, the cooler can be reduced in size.
  • Both the heat sink 7 and the cooler 8 are for discharging and cooling the heat generated by the semiconductor element 3 to the outside.
  • the heat sink 7 and the cooler 8 are collectively referred to as a cooling mechanism.
  • the magnetic metal material means a ferromagnetic metal material at a temperature below the melting point of the solder 12, and is an iron, nickel, cobalt elemental alloy or an alloy containing these elements, and is a metal attached to the magnet.
  • the nonmagnetic metal material refers to a paramagnetic or diamagnetic metal material, which is a metal element such as copper, aluminum, chromium, or an alloy thereof, which is not attached to a magnet.
  • all metal materials are classified according to whether they are attached to magnets or not to magnets. Therefore, they are either magnetic metal materials or nonmagnetic metal materials. There is no metallic material that does not belong to any of the above.
  • both the magnetic metal material and the non-magnetic metal material are metal materials, they are conductive and have an electrical resistivity of 10 ⁇ m or less. Therefore, for example, ferrite containing iron oxide as a main component is a ceramic and an insulator, and thus is a ferromagnetic material and contains a metal element, but is not a magnetic metal material in the present invention.
  • the power semiconductor device 1 includes a step of bonding the semiconductor element 3 to the insulating substrate 5, a step of bonding the insulating substrate 5 to the heat sink 7 and manufacturing the power module 2, and a magnetic metal for the refrigerant jacket 9.
  • the molten solder 12 is solidified to join the heat sink 7 and the cooler 8, and the manufacturing method includes a step of sealing the opening provided in the cooler 8 or the refrigerant jacket 9. it can.
  • FIG. 3 is a cross-sectional view showing the method for manufacturing the power semiconductor device of the first embodiment.
  • FIG. 4 is a cross-sectional view and a top view showing the method for manufacturing the power semiconductor device of the first embodiment.
  • FIG. 5 is a cross-sectional view showing the method for manufacturing the power semiconductor device of the first embodiment.
  • FIG. 3 shows a process of manufacturing the power module 2 by joining the semiconductor element 3, the insulating substrate 5, and the heat sink 7, and
  • FIG. 4 shows a process of providing the solder 12 on the magnetic metal part 10 of the cooler 8.
  • FIG. 5 shows a process of soldering the power module 2 and the cooler 8 by induction heating of the magnetic metal part 10.
  • FIGS. 4A and 5 are taken along a broken line CD in FIG. It is sectional drawing.
  • FIG. 4B is a top view of FIG. In FIG. 5, the semiconductor element 3, the bonding material 4, the insulating substrate 5, and the bonding material 6 are also shown for easy understanding.
  • FIG. 3A shows a manufacturing method in which the step of bonding the semiconductor element 3 and the insulating substrate 5 and the step of bonding the insulating substrate 5 and the heat sink 7 are performed simultaneously. These show the manufacturing method which performs the process of joining the insulated substrate 5 and the heat sink 7 after the process of joining the semiconductor element 3 and the insulated substrate 5.
  • a plating film such as nickel plating having good wettability with solder and good corrosion resistance on the joint surface of the heat sink 7 with the insulating substrate 5 before soldering with the joining material 6.
  • a bonding material 6 made of paste solder or plate solder is disposed on the heat sink 7 and bonded.
  • a conductive pattern 53 of the insulating substrate 5 is disposed on the material 6, and a bonding material 4 made of paste solder or plate solder is disposed on the conductive pattern 52 of the insulating substrate 5.
  • the semiconductor element 3 is disposed. Then, the superposed members are heated simultaneously in a reflow furnace or the like, the bonding material 4 and the bonding material 6 are melted, and then cooled to solidify the bonding material 4 and the bonding material 6.
  • the joining material 4 joins the semiconductor element 3 and the insulating substrate 5, and the joining material 6 joins the insulating substrate 5 and the heat sink 7 to be integrated as shown in FIG.
  • the step of bonding the semiconductor element 3 to the insulating substrate 5 and the step of bonding the insulating substrate 5 to the heat sink 7 are performed simultaneously.
  • the semiconductor element is obtained when the bonding material 6 is melted. It is necessary that the bonding material 4 for bonding 3 and the insulating substrate 5 does not remelt. For this reason, sintered silver may be used for the bonding material 4, and a solder material may be used for the bonding material 6, or both the bonding material 4 and the bonding material 6 may be used as solder materials, and the bonding material 6 may be more than the bonding material 4. A solder material having a low melting point may be used.
  • Sintered silver is a bonding material that is sintered at a temperature lower than the melting point of silver using the high reactivity of nanometer-sized silver nanoparticles, and the sintering temperature for bonding is Since it is lower than the melting point after sintering, it is a joining material that can maintain the joined state of the member even when the temperature is lower than the melting point of silver after joining the members at a low temperature.
  • the semiconductor element 3 is bonded onto the conductive pattern 52 of the insulating substrate 5 by the bonding material 4 made of sintered silver or a solder material.
  • the bonding material 6 made of paste solder or plate solder is disposed on the heat sink 7, and the conductive pattern 53 of the insulating substrate 5 is disposed on the bonding material 6.
  • heating is performed in a reflow furnace or the like, the bonding material 6 is melted, and then the bonding material 6 is solidified by cooling, and the bonding material 6 bonds the insulating substrate 5 and the heat sink 7 to each other.
  • the insulating substrate 5 and the heat sink 7 are integrated as shown in FIG.
  • the step of bonding the insulating substrate 5 to the heat sink 7 is performed after the step of bonding the semiconductor element 3 to the insulating substrate 5.
  • a power module 2 is manufactured by providing a case such as a resin mold for protecting the substrate 5.
  • the case is provided such that the positioning hole 13 is outside the case.
  • 4 (a) and 4 (b) are diagrams showing a manufacturing method in which a step of providing the magnetic metal portion 10 in the refrigerant jacket 9 and a step of providing the solder 12 between the cooler 8 and the heat sink 7 are performed.
  • the refrigerant jacket 9 has a concave cross section and has an opening 11a on the upper side, and is provided with a refrigerant flow path 11 communicating with the opening 11a on the inside.
  • the magnetic metal part 10 is provided around the opening 11 a of the refrigerant jacket 9. Therefore, the cooler 8 configured by providing the magnetic metal part 10 in the refrigerant jacket 9 also has an opening 11 a communicating with the refrigerant flow path 11.
  • the magnetic metal part 10 may be formed by processing a plate material made of a magnetic metal material.
  • the magnetic metal part 10 has a part of the surface 10a of the magnetic metal part 10 exposed to the outside of the refrigerant jacket 9, and is joined around the opening 11a of the refrigerant jacket 9 by a method such as welding, brazing, or caulking. Is provided.
  • the magnetic metal part 10 is provided in close contact with the refrigerant jacket 9 in a liquid-tight manner so that the refrigerant does not leak from between the refrigerant jacket 9 and the magnetic metal part 10, and the cooler 8 is obtained.
  • coolant which is fluids, such as water flows into the refrigerant
  • the magnetic metal portion 10 is not limited to the above method, and may be formed directly around the opening 11a of the refrigerant jacket 9 by a method of forming a film such as plating or thermal spraying.
  • the thickness is preferably 0.1 mm or more.
  • the thickness of the magnetic metal part 10 is less than 0.1 mm, the magnetic metal part 10 is thin, so that the electric resistance is too large, and the induction current during induction heating sufficiently flows to the magnetic metal part 10. This is because the efficiency of induction heating of the magnetic metal part 10 is deteriorated. Therefore, for example, a nickel plating film formed for the purpose of improving the wettability of solder has a film thickness of at most several ⁇ m.
  • the magnetic metal part 10 has a thickness of at least 0.1 mm or more and preferably a thickness of 50 mm or less. More preferably, they are 1 mm or more and 10 mm or less. Since the magnetic metal part 10 is formed of iron or the like, the specific gravity is larger than that of the refrigerant jacket 9 formed of aluminum or aluminum alloy. Therefore, if the thickness of the magnetic metal part 10 exceeds 50 mm, the power semiconductor device 1 Since it becomes heavy, it is not preferable.
  • the thickness of the magnetic metal part 10 exceeds 50 mm, the heat capacity is too large, and the responsiveness of temperature control of the magnetic metal part 10 during induction heating deteriorates. This is not preferable because it is difficult to control the temperature so as not to increase to near the melting point of the bonding material 6.
  • the solder 12 is disposed on the surface 10b of the magnetic metal portion 10.
  • the solder 12 is arranged such that a positioning hole 14 provided at the upper end of the side wall of the cooler 8 is located on the outer peripheral side of the cooler 8.
  • a plating film such as nickel plating having good solder wettability is preferably formed in advance on the surface 10b of the magnetic metal portion 10 to be soldered, and at the same time as the plating film for preventing corrosion due to the above-described refrigerant. It may be formed.
  • paste solder or plate solder may be used for the solder 12.
  • the solder 12 is disposed on the surface 10b of the magnetic metal portion 10 and then heated to once melt the solder 12, and then cooled to solidify the solder 12 so that the solder 12 is solidified to the surface 10b of the magnetic metal portion 10. It may be preformed on top. If the solder 12 is preformed on the surface 10b of the magnetic metal part 10, the heat conduction between the magnetic metal part 10 and the solder 12 is improved. Therefore, the magnetic metal part 10 is induction-heated to heat the heat sink 7 and the solder. The heating time in the case of joining can be shortened.
  • the power module 2 shown in FIG. 3C is provided in the positioning hole 13 of the heat sink 7, the magnetic metal portion 10 and the refrigerant jacket 9.
  • the positioning hole 14 is aligned with the positioning hole 14 and disposed on the magnetic metal portion 10.
  • the solder 12 is provided between the cooler 8 and the heat sink 7 of the power module 2.
  • fixing pins are inserted into the positioning holes 13 and the positioning holes 14 and temporarily fixed.
  • FIG. 5 shows the induction heating of the magnetic metal part 10 by a high frequency induction heating device to melt the solder 12, and then the molten solder 12 is solidified to join the power module 2 and the cooler 8. It is a figure which shows the manufacturing method which performs the process of sealing the opening part connected.
  • the magnetic metal part 10 of the cooler 8 and the heat sink 7 of the power module 2 are provided so as to overlap each other with the solder 12 interposed therebetween, and temporarily fixed by the fixing pin 15 inserted into the positioning hole 13 and the positioning hole 14. After stopping, it is placed in the high frequency induction heating device 16 and a high frequency current is supplied to the coil of the high frequency induction heating device 16. Since the surface 10a and part of the surface 10b of the magnetic metal part 10 are exposed to the outside of the cooler 8, the high frequency magnetic flux generated by the coil of the high frequency induction heating device 16 is hindered by other nonmagnetic metal materials. Without reaching the magnetic metal part 10, the magnetic metal part 10 is induction-heated and the temperature rises.
  • the heat sink 7 and the refrigerant jacket 9 are both formed of a nonmagnetic metal material such as aluminum or an aluminum alloy, the magnetic metal portion 10 is not exposed to the outside of the cooler 8 at all.
  • the high-frequency magnetic flux generated by the high-frequency induction heating device 16 reaches the non-magnetic metal material, an induction current is generated in the non-magnetic metal material by electromagnetic induction so as to cancel the high-frequency magnetic flux.
  • the magnetic flux does not reach and the magnetic metal part 10 is not induction heated.
  • the high-frequency magnetic flux generated by the high-frequency induction heating device 16 reaches the magnetic metal part 10
  • the magnetic metal part 10 can be induction-heated.
  • the coil of the high frequency induction heating device 16 is a cylindrical coil having a width larger than the width of the cooler 8, and a part of the lower portion of the cooler 8 is below the upper end of the cylindrical coil as shown in FIG. It is preferable that it is provided so that it may be located in. If the distance between the upper end of the cylindrical coil and the lower end of the cooler 8 is greatly separated, the efficiency of induction heating of the magnetic metal portion 10 is deteriorated, and the bonding material 6 of the magnetic metal portion 10 and the heat sink 7 during induction heating is deteriorated. The temperature difference from the portion where the insulating substrate 5 is bonded becomes small, which is not preferable.
  • the magnetic metal part 10 may have a nonmagnetic metal plating film formed on the surface of the magnetic metal part 10 in order to obtain corrosion resistance.
  • the plating film formed for the purpose of improving the wettability of the solder or the corrosion resistance has a thickness of several ⁇ m at most, the electric resistance is too large and the induction heating of the magnetic metal part 10 is performed. Therefore, the high-frequency magnetic flux reaches the magnetic metal material portion of the magnetic metal portion 10 without being canceled by the induced current flowing in the plating film formed on the surface of the magnetic metal portion 10.
  • the magnetic metal material has a relative permeability of 10 times or more larger than that of the non-magnetic metal material, a magnetic flux density is large in the magnetic metal material, a large induced current flows by electromagnetic induction, and the magnetic metal portion 10 is caused by Joule heat due to the induced current. Fever.
  • the magnetic metal part 10 including the film is called. That is, when the magnetic metal portion 10 having a nonmagnetic metal plating film formed on the surface is exposed to the outside of the power semiconductor device 1, strictly speaking, it is not in contact with the space outside the cooler 8. Although it can be said that it is a magnetic metal, it is called the magnetic metal part 10 including the plating film of the nonmagnetic metal on the surface as described above. Therefore, even in such a case, the magnetic metal part 10 is exposed to the outside of the cooler 8.
  • the insulator of the nonmagnetic material has no influence on the high-frequency magnetic flux, and is the same as not existing physically. So you can ignore it.
  • the insulator covering the surface of the magnetic metal part 10 is a ferromagnetic material such as a ferrite core, the magnetic metal part 10 is prevented from being induction-heated by the high-frequency magnetic flux. It is not desirable to cover the exposed portion of the device 1 with a ferromagnetic insulator.
  • the nickel plating film having a thickness of about several ⁇ m is as described above. Since the resistance is large, it is hardly heated by induction, and may be formed of a nonmagnetic metal material.
  • the heat of the magnetic metal part 10 heated directly by induction heating is transferred to the solder 12 by heat conduction, and the temperature of the solder 12 rises as the temperature of the magnetic metal part 10 rises.
  • the solder 12 is once melted on the magnetic metal portion 10 and then solidified and preformed, the magnetic metal portion 10 and the solder 12 are in close contact with each other. This is preferable because the heat conduction is good and the temperature of the solder 12 can be raised in a short time.
  • the heat transferred from the magnetic metal part 10 to the solder 12 is also transferred to the fin base 71 of the heat sink 7 in contact with the solder 12, and the temperature of the fin base 71 also rises.
  • the temperature of the solder 12 rises above the melting point of the solder 12, the solder 12 melts.
  • the adhesion between the solder 12 and the fin base 71 is improved, and the heat transfer rate from the solder 12 to the fin base 71 is increased, so that the temperature of the portion of the fin base 71 in contact with the solder 12 rapidly increases.
  • the molten solder 12 wets the fin base 71, diffuses into the fin base 71, and forms an alloy layer. Is done. At this time, although the alloy layer is formed and soldered, the solder 12 is in a molten state and the heat sink 7 and the magnetic metal portion 10 are not fixed.
  • the solder 12 When the solder 12 is diffused into the fin base 71 and soldering is performed, the supply of the high-frequency current to the coil of the high-frequency induction heating device 16 is stopped. Then, since the high frequency magnetic flux that has reached the surface 10a of the magnetic metal portion 10 exposed outside the refrigerant jacket 9 is lost, induction heating is stopped, and the temperature of the magnetic metal portion 10, the solder 12, and the fin base 71 is lowered. To do. When the temperature of the solder 12 falls below the melting point, the molten solder 12 is solidified, and the magnetic metal portion 10 of the cooler 8 and the heat sink 7 of the power module 2 are joined and fixed by the solder 12. Then, the fixing pin 15 is removed and the power semiconductor device 1 is completed.
  • the heating of the magnetic metal part 10 by induction heating is direct heating in which the magnetic metal part 10 itself becomes a heat source, the controllability of the heating temperature is very good. Further, the portion of the fin base 71 to be soldered by the solder 12 is also close to the magnetic metal portion 10, so that the heating temperature can be controlled.
  • the high frequency current supplied to the coil of the high frequency induction heating device 16 is controlled while measuring the temperature of at least one of the magnetic metal portion 10, the solder 12, and the portion soldered by the solder 12 of the fin base 71, Solder joining with the solder 12 can be easily and reliably performed while preventing the temperature of the joint portion with the joining material 6 from exceeding the melting point of the joining material 6.
  • the temperature of the magnetic metal part 10, the solder 12, and the portion soldered by the solder 12 of the fin base 71 may be measured by non-contact temperature measuring means such as a radiation thermometer, for example.
  • the solder 12 wets the fin base 71 and diffuses into the fin base 71 and forms an alloy layer every time soldering is performed. If the time and temperature for supplying the high-frequency current to the coil are determined, and each time soldering is performed, the high-frequency current is supplied to the coil for the determined time or supplied to the coil so that the determined temperature is reached. Good.
  • the high-frequency current supplied to the coil of the high-frequency induction heating device 16 does not necessarily need to be started and stopped.
  • a coil that generates high-frequency magnetic flux is provided in a predetermined section in the traveling direction of a transport device such as a belt conveyor.
  • induction heating may be performed for a predetermined time. That is, strictly guiding by placing a solder 12 between the power module 2 and the cooler 8 and temporarily fixing with a fixing pin 15 on a conveying device and passing a predetermined section in a predetermined time. The time for heating is controlled and soldering can be performed.
  • the temperature of the part of the fin base 71 in contact with the solder 12 can be rapidly raised to a temperature equal to or higher than the melting point of the solder 12.
  • the portion of the fin base 71 in contact with the solder 12 reaches a temperature equal to or higher than the melting point of the solder 12
  • the amount of heat flowing from the magnetic metal portion 10 to the fin base 71 via the solder 12 is limited.
  • the temperature at the joint with the substrate 5 can be kept below the melting point of the solder.
  • the temperature of the bonding material 6 for bonding the insulating substrate 5 and the heat sink 7 is suppressed from being higher than the melting point, and naturally the temperature of the bonding material 4 for bonding the semiconductor element 3 and the insulating substrate 5 is the melting point. It can also be suppressed. Therefore, since the bonding material 4 and the bonding material 6 are not remelted, the reliability of the power semiconductor device 1 can be kept high.
  • the high frequency induction heating is not indirect heating but directly generates heat in the magnetic metal portion 10, so that the temperature controllability is good and the temperature of the solder 12 and its surrounding joints is not increased more than necessary.
  • the material 6 can be reliably prevented from being remelted, and the reliability of the power semiconductor device 1 can be improved.
  • the opening of the cooler 8 is sealed by metal bonding between the magnetic metal portion 10 and the solder 12 and metal bonding between the heat sink 7 and the solder 12, the pressure resistance and heat resistance can be improved.
  • the method for manufacturing a power semiconductor device of the present invention can reduce the manufacturing cost of the power semiconductor device.
  • a reflow furnace, oven, etc. are used when brazing is performed using a bonding material such as solder, as in the case of bonding between an insulating substrate and a semiconductor element, or bonding between an insulating substrate and a heat sink.
  • the entire power semiconductor device to be brazed is housed in the heating equipment and heated so that the temperature of the power semiconductor device becomes substantially uniform. For this reason, when the same method is used for joining the power module 2 and the cooler 8, the heating equipment becomes large-scale, and the heating time becomes longer, so that the power consumption of the heating equipment increases.
  • the magnetic metal portion 10 provided in the cooler 8 can be selectively heated in a short time by high-frequency induction heating. Heating equipment for soldering 2 to the cooler 8 can be made small. Moreover, since the electric power required for heating can be concentrated and supplied to the magnetic metal part 10, the time required for the solder joint between the power module 2 and the cooler 8 can be shortened, and the power consumption required for the solder joint can be suppressed. Can do.
  • the manufacturing method of the power semiconductor device of the present invention can suppress an unnecessary temperature rise of the insulating substrate 5 and the semiconductor element 3 when the power module 2 and the cooler 8 are joined, The thermal stress generated in the insulating substrate 5 and the semiconductor element 3 due to the temperature change can be reduced.
  • thermal stress is generated in the bonding material 6 between the insulating substrate 5 and the heat sink 7 and the bonding material 4 between the semiconductor element 3 and the insulating substrate 5 due to a temperature change during use.
  • These bonding materials 4 and 6 use a bonding material made of a metal material such as solder or sintered silver.
  • a crack due to metal fatigue occurs and eventually the bonding portion Peeling occurs.
  • the life design of each joint is performed in consideration of both the thermal stress due to the temperature change during manufacture and the thermal stress due to the temperature change during use.
  • the temperature change when soldering by heating the entire power semiconductor device during manufacturing is larger than the temperature change during use, the temperature change during manufacturing is a factor that shortens the life of the power semiconductor device. It was one.
  • the temperature rise during the manufacturing of the bonding material 4 and the bonding material 6 can be suppressed, so that the life of the power semiconductor device 1 can be further extended.
  • the power semiconductor device 1 has a magnetic permeability higher than that of the refrigerant jacket 9 made of a nonmagnetic metal material, and a magnetic metal part 10 that is partially exposed to the outside of the cooler 8. 8, the high-frequency magnetic flux generated by the high-frequency induction heating device 16 reaches the magnetic metal part 10 without being blocked by the refrigerant jacket 9 made of a non-magnetic metal, so that the magnetic metal part 10 is selectively and short-circuited. Can be heated in time.
  • the width of the fin base 71 of the heat sink 7 is described. Is the same as the width of the refrigerant jacket 9 and the high-frequency magnetic flux generated by the high-frequency induction heating device 16 is generated in the cooler 8 even when the surface 10b of the magnetic metal part 10 is not exposed to the outside of the cooler 8. It reaches the surface 10a of the magnetic metal part 10 exposed to the outside of the magnetic metal part 10, and the magnetic metal part 10 can be induction heated.
  • the heat sink 7 and the cooler 8 of the power module 2 are sealed by solder bonding with the solder 12.
  • the solder 12 may be easily corroded because it is exposed to a coolant such as water flowing through the coolant channel 11.
  • a coolant such as water flowing through the coolant channel 11.
  • the lower side from the joint surface of the fin base 71 with the solder 12, that is, the cooler 8 side is plated.
  • Corrosion resistance can be improved by dipping in the solution and applying nickel plating to the solder joint inside the cooler 8 by electrolytic nickel plating or electroless nickel plating.
  • the reliability of the bonded portion by the bonding material 4 and the bonding material 6 in the power module 2 is high, and the pressure resistance and heat resistance of the sealing portion of the cooler 8 are improved.
  • the effect that a high-power semiconductor device can be obtained is obtained.
  • FIG. FIG. 6 is a sectional view showing a power semiconductor device according to the second embodiment of the present invention.
  • the same reference numerals as those in FIG. 1 denote the same or corresponding components, and the description thereof is omitted.
  • the first embodiment of the present invention is different from the first embodiment in that a part of the magnetic metal portion 10 protrudes outside the refrigerant jacket 9.
  • the magnetic metal part 10 is provided around the opening of the refrigerant jacket 9 of the cooler 8 as in the first embodiment, but a part of the magnetic metal part 10 is provided.
  • the refrigerant jacket 9 protrudes outward from the side surface 9a.
  • a surface 10 a that is a side surface and a part of a surface 10 c that is a lower surface are exposed to the outside of the power semiconductor device 1.
  • the fin base 71 of the heat sink 7 has a width wider than that of the refrigerant jacket 9, and the fin base 71 and the magnetic metal part 10 are portions that protrude outward from the side surface 9 a of the refrigerant jacket 9, and are solder 12. It is joined by.
  • the power semiconductor device 1 is manufactured by the manufacturing method described in the first embodiment. However, in the power semiconductor device 1 according to the second embodiment, as described above, a part of the magnetic metal portion 10 protrudes outside the side surface 9a of the refrigerant jacket 9, so that the coil of the high-frequency induction heating device 16 is The generated high-frequency magnetic flux reaches the surface 10a of the magnetic metal portion 10 and the portion of the surface 10c that protrudes outward from the side surface 9a of the refrigerant jacket 9 without being obstructed by the refrigerant jacket 9, so that the protruding portion can be efficiently used. Good induction heating. Therefore, the time required for solder joining between the heat sink 7 and the cooler 8 can be shortened as compared with the power semiconductor device shown in the first embodiment.
  • the solder 12 Since the solder 12 is provided on the protruding portion, the solder 12 can be melted in a shorter time and soldered to the heat sink 7. Therefore, the bonding material 4 and the bonding material 6 in the power module 2 are not melted again, and the reliability of the power semiconductor device 1 can be further improved.
  • the reliability of the bonded portion by the bonding material 4 and the bonding material 6 in the power module 2 is higher, and the pressure resistance and heat resistance of the sealing portion of the cooler 8 are increased.
  • the effect that a high-power semiconductor device can be obtained is obtained.
  • FIG. 7 is a sectional view showing a power semiconductor device according to the third embodiment of the present invention.
  • the same reference numerals as those in FIG. 1 denote the same or corresponding components, and the description thereof is omitted.
  • the configuration in which the magnetic metal portion 10 is provided on the side surface of the refrigerant jacket 9 is different from the first embodiment of the present invention.
  • the magnetic metal part 10 is provided on the side surface 9 a of the refrigerant jacket 9 by a method such as welding, brazing, or caulking, and the surface joined to the refrigerant jacket 9 and solder A surface 10a that is a side surface and a surface 10c that is a lower surface, excluding the surface 10b to be joined, are exposed to the outside of the cooler 8.
  • the magnetic metal part 10 is provided such that the surface 10b on which the solder 12 of the magnetic metal part 10 is provided and the end face 9b having the opening of the refrigerant jacket 9 are flush and have the same plane.
  • the magnetic metal portion 10 is preferably provided in a liquid-tight manner without providing a gap between the side surface 9a of the refrigerant jacket 9, but as shown in FIG. 7, the solder 12 is attached to the magnetic metal portion 10 and the refrigerant. Since it is provided over the jacket 9, the magnetic metal part 10 and the coolant jacket 9 do not necessarily need to be liquid-tightly adhered. If there is a gap, the gap is filled with the solder 12.
  • the magnetic metal part 10 is provided separated from the refrigerant flow path 11 by the solder 12, water flowing in the refrigerant flow path 11 or the like The refrigerant does not touch the magnetic metal part 10, and corrosion of the magnetic metal part 10 can be suppressed.
  • the power semiconductor device 1 is manufactured by the same manufacturing method as in the first embodiment. However, in the power semiconductor device 1 according to the third embodiment, since the solder 12 is provided across the magnetic metal portion 10 and the refrigerant jacket 9, the phenomenon when the solder 12 is melted and joined by induction heating is different. . Hereinafter, different parts will be described.
  • a plating film such as nickel plating with good solder wettability and corrosion resistance on the surface of the magnetic metal part 10 and the coolant jacket 9 where the solder 12 is provided before the solder 12 is disposed.
  • solder composed of paste solder, plate solder, or the like over the end face 9b of the cooler 8 having the opening of the refrigerant jacket 9 and the face 10b of the magnetic metal part 10 disposed on the same plane as the end face 9b. 12 is arranged. After the solder 12 is disposed, the solder 12 is once heated to melt the solder 12, and then cooled and solidified, whereby the solder 12 is flush with the end face 9b having the opening of the coolant jacket 9, and the end face 9b is flush with the end face 9b. It may be preformed over the surface 10b of the magnetic metal part 10 disposed on the surface. It is preferable to preform the solder 12 because heat conduction from the magnetic metal part 10 heated by induction to the solder 12 becomes good and the soldering time can be shortened.
  • the heat sink 7 of the power module 2 is disposed on the solder 12, and the magnetic metal part 10 is induction heated by the high frequency magnetic flux generated by the high frequency induction heating device 16. To do.
  • the temperature of the magnetic metal part 10 rises due to induction heating, the heat of the magnetic metal part 10 is transferred to the refrigerant jacket 9 and the solder 12, and the temperature of the refrigerant jacket 9 and the solder 12 rises.
  • the temperature of the solder 12 exceeds the melting point, the solder 12 melts. The solder 12 starts to melt from the portion in contact with the magnetic metal portion 10, and the melting progresses toward the portion in contact with the refrigerant jacket 9.
  • the portion of the solder 12 in contact with the refrigerant jacket 9 is melted, and the temperature of the refrigerant jacket 9 becomes equal to or higher than the melting point of the solder 12 due to heat conduction from the magnetic metal portion 10 or the solder 12.
  • the coolant jacket 9 and the magnetic metal part 10 and the solder 12 form a metal joint.
  • the temperature of the fin base 71 of the heat sink 7 increases due to heat conduction from the solder 12 at the portion in contact with the solder 12, and when the solder 12 melts, the heat conduction further improves and the temperature rises rapidly. And if the temperature of the part which contacts the solder 12 of the fin base 71 becomes more than melting
  • the induction heating by the high frequency induction heating device 16 is stopped.
  • the temperature of the solder 12 falls below the melting point, the solder 12 is solidified, and the cooler 8 having the magnetic metal part 10 and the refrigerant jacket 9 and the power module 2 having the heat sink 7 are soldered by the solder 12.
  • the high-frequency induction heating device 16 is generated.
  • the magnetic metal part 10 is smaller in size than the magnetic metal parts of the first and second embodiments, and thus has a small heat capacity.
  • the temperature of the magnetic metal part 10 is rapidly increased by induction heating, and the cooler 8 and the power module 2 are heated. Can be soldered in a short time.
  • the bonding material 6 and the bonding material 4 in the power module 2 are not melted again, and the reliability of the power semiconductor device can be improved.
  • the cooler 8 and the heat sink 7 of the power module 2 are soldered together, a power semiconductor device with high pressure resistance and heat resistance of the sealing portion of the cooler 8 can be obtained.
  • FIG. 8 is a sectional view showing a power semiconductor device according to the fourth embodiment of the present invention. 8, the same reference numerals as those in FIG. 1 denote the same or corresponding components, and the description thereof is omitted.
  • the configuration in which the refrigerant jacket also serves as a heat sink is different from the first embodiment of the present invention.
  • the power module 2 is configured using a refrigerant jacket 9 instead of a heat sink.
  • the refrigerant jacket 9 includes a fin base 71 corresponding to the fin base of the heat sink, and a heat dissipation fin 72 corresponding to the heat dissipation fin of the heat sink.
  • the refrigerant flow path 11 is provided on the inner side surrounded by the side wall 91, and an opening is provided on the end side of the side wall 91 on the side opposite to the fin base 71.
  • Such a shape can be formed by cutting a rectangular parallelepiped of aluminum or aluminum alloy, but can also be formed by die casting.
  • the refrigerant jacket 9 is not necessarily formed integrally, and the refrigerant jacket 9 is configured by providing the heat sink having the heat radiation fins 72 by joining the side wall 91 separately from the heat sink by welding, brazing, or caulking. May be.
  • the refrigerant jacket 9 includes the fin base 71 and the side wall 91, a description will be given using the cooling mechanism 81 instead of the cooler.
  • the cooling mechanism 81 is a combination of the cooler 8 and the heat sink 7 in the first to third embodiments.
  • the magnetic metal portion 10 is formed of a flat magnetic metal material, and is joined to the end surface 91a of the side wall 91 of the refrigerant jacket by the solder 12 to constitute the bottom wall of the cooling mechanism 81.
  • the end face 91a of the side wall 91 of the refrigerant jacket 9 and the magnetic metal part 10 are provided in close contact with each other in a liquid-tight manner.
  • the refrigerant jacket 9 is sealed by bonding the magnetic metal part 10 to the end face 91a of the side wall 91. Is done.
  • a surface 10 a that is a side surface and a surface 10 c that is a lower surface are exposed to the outside of the cooling mechanism 81.
  • the power semiconductor device 1 is manufactured by the same method as in the first embodiment. That is, the process until the insulating substrate 5 in which the semiconductor element 3 is bonded to the fin base 71 of the refrigerant jacket 9 by the bonding material 4 is bonded by the bonding material 6 is the same, and then the magnetic metal in which the solder 12 is disposed.
  • the end surface 91a of the side wall 91 and the magnetic metal part 10 are soldered together by inductively heating the part 10 with the high frequency induction heating device 16 and melting the solder 12.
  • the surface to be soldered of the magnetic metal portion 10 and the surface to be soldered which is the end surface 91 a of the side wall 91 are separated from each other. It is preferable to form a plating film having good solder wettability and corrosion resistance, such as nickel plating. Since the surface 10b which is the upper surface of the magnetic metal part 10 is soldered to the end face 91a of the side wall 91 and is exposed to the refrigerant flow path 11, the magnetic metal part 10 is also used to suppress corrosion by a refrigerant such as water. It is preferable to form a plating film such as nickel plating on the entire surface 10b.
  • the solder 12 made of paste solder or plate solder is disposed on the magnetic metal part 10.
  • the solder 12 is preferably preformed on the magnetic metal part 10.
  • the end surface 91 a of the side wall 91 is disposed on the solder 12 so that the magnetic metal portion 10 is induction heated by the high frequency induction heating device 16.
  • the coil of the high-frequency induction heating device 16 may be a flat coil disposed so as to face the surface 10c of the magnetic metal portion 10 that is the bottom surface of the cooler 8 and is exposed to the outside of the cooler 8. .
  • the temperature of the magnetic metal part 10 rises and the heat of the magnetic metal part 10 is transferred to the solder 12 by heat conduction.
  • the temperature of the solder 12 rises and becomes equal to or higher than the melting point of the solder 12
  • the solder 12 melts, heat conduction from the solder 12 to the end face 91a of the side wall 91 is promoted, and the temperature of the end face 91a of the side wall 91 rises rapidly.
  • the end surface 91a of the side wall 91 becomes equal to or higher than the melting point of the solder 12
  • the end surface 91a of the side wall 91 and the solder 12 form a metal bond.
  • the power semiconductor device 1 solder-joins the end surface 91a of the side wall 91 of the refrigerant jacket 9 that is the farthest from the bonding material 6 and the bonding material 4 in the power module 2 to the magnetic metal part 10, Since the opening communicating with the refrigerant flow path 11 is sealed, the temperature increase of the bonding material 6 and the bonding material 4 can be suppressed when the solder 12 is melted, and the melting can be prevented.
  • FIG. 9 is a sectional view showing another power semiconductor device according to the fourth embodiment of the present invention. 9, the same reference numerals as those in FIG. 8 denote the same or corresponding components, and the description thereof is omitted.
  • the power semiconductor device of FIG. 9 is different from the power semiconductor device of FIG. 8 in that the radiation fins 72 and the side walls 91 have the same length.
  • the radiating fins 72 and the side walls 91 provided upright on the fin base 71 of the refrigerant jacket 9 have the same length, and the end surfaces 72 a and the side walls 91 of the radiating fins 72.
  • the end face 91a is located in the same plane.
  • the end surface 72 a of the heat radiating fin 72, the end surface 91 a of the side wall 91, and the surface 10 b that is the upper surface of the magnetic metal part 10 are joined by solder 12.
  • the joining method using the solder 12 is the same as in the case of the power semiconductor device shown in FIG. In the case of the power semiconductor device 1 shown in FIG.
  • solder 12 is preferably placed and preformed at a position where the end surface 72a of the heat radiating fin 72 of the magnetic metal part 10 is soldered.
  • solder bonding for sealing the opening communicating with the refrigerant flow path 11 is performed at a position farthest from the bonding material 6 and the bonding material 4 in the power module 2.
  • the temperature rise of the bonding material 6 and the bonding material 4 can be suppressed so as not to be remelted.
  • the magnetic metal part 10 is soldered to both the end face 91a of the side wall 91 and the end face 72a of the radiating fin 72, the area to be soldered is increased, and the pressure resistance of the sealing part is further increased. it can.
  • the magnetic metal is located farthest from the fin base 71 in which the insulating substrate 5 to which the semiconductor element 3 is bonded by the bonding material 4 is bonded by the bonding material 6. Since the portion 10 is inductively heated and the solder 12 is melted and joined by heat generation of the magnetic metal portion 10, the opening communicating with the coolant channel 11 of the cooling mechanism 81 is sealed. Since the temperature rise of the bonding material 4 and the bonding material 6 can be suppressed when sealing the battery, it is possible to obtain a power semiconductor device including a cooler with high reliability and excellent pressure resistance and heat resistance. Play.
  • FIG. 10 is a cross-sectional view showing the power semiconductor device and the method for manufacturing the power semiconductor device according to the fifth embodiment of the present invention.
  • FIG. 10A is a diagram showing a method of manufacturing a power semiconductor device
  • FIG. 10B is a diagram showing a power semiconductor device manufactured by the manufacturing method of FIG. 10A.
  • the same reference numerals as those in FIG. 1 denote the same or corresponding components, and the description thereof is omitted.
  • the first embodiment of the present invention is different from the first embodiment in that the magnetic metal part is not integrated with the refrigerant jacket, the cooler is composed only of the refrigerant jacket, and the magnetic metal part is removed after the power semiconductor device 1 is manufactured. ing.
  • the power module 2 of the power semiconductor device 1 is manufactured by the manufacturing method described in the first embodiment. That is, the power module 2 is manufactured by bonding the insulating substrate 5 to which the semiconductor element 3 is bonded with the bonding material 4 to the fin base 71 of the heat sink 7 with the bonding material 6.
  • a magnetic metal part 10 is provided around the refrigerant jacket 9 in contact with the refrigerant jacket 9. Therefore, in the fifth embodiment, the cooler 8 and the refrigerant jacket 9 are the same.
  • the refrigerant jacket 9 and the magnetic metal part 10 are not integrally joined and can be separated, and the refrigerant jacket 9 is inserted inside the annular magnetic metal part 10, so that the magnetic metal is surrounded around the refrigerant jacket 9.
  • the part 10 is provided in contact.
  • a solder 12 such as paste solder or plate solder is disposed on the end surface 9b of the coolant jacket 9 that is soldered to the fin base 71 of the heat sink 7.
  • solder 12 Before placing the solder 12 on the end face 9b of the refrigerant jacket 9, it is preferable to form a plating film having good solder wettability and corrosion resistance such as nickel plating. Further, it is preferable that the solder 12 is disposed on the end face 9b of the refrigerant jacket 9, and then once melted and then solidified to be preformed. The solder 12 may be disposed on the end surface 9b before the magnetic metal portion 10 is provided around the refrigerant jacket 9, or may be disposed on the end surface 9b after the magnetic metal portion 10 is provided around the refrigerant jacket 9. Good.
  • the heat sink 7 of the power module 2 is disposed on the solder 12 on the end surface 9b in contact with the solder 12.
  • the solder 12 is provided between the refrigerant jacket 9 of the cooler 8 and the heat sink 7 of the power module 2.
  • a high frequency magnetic flux is generated by the high frequency induction heating device 16 to inductively heat the magnetic metal part 10. Since the surface 10a of the annular magnetic metal portion 10 is exposed to the outside of the cooler 8, the high-frequency magnetic flux generated by the high-frequency induction heating device 16 hinders the refrigerant jacket 9 and the heat sink 7 made of non-magnetic metal. Without induction, the magnetic metal part 10 is efficiently induction-heated. When the magnetic metal part 10 is induction-heated, the temperature of the magnetic metal part 10 rises, heat is transferred from the magnetic metal part 10 to the refrigerant jacket 9, and the temperature of the refrigerant jacket 9 rises.
  • the magnetic metal part 10 When the magnetic metal part 10 is induction-heated, the magnetic metal part 10 expands thermally, but the refrigerant jacket 9 is made of aluminum or aluminum alloy having a higher thermal expansion coefficient than the magnetic metal part 10 made of a magnetic metal material such as iron. Therefore, even if the temperature rise of the refrigerant jacket 9 is smaller than that of the magnetic metal part 10, the refrigerant jacket 9 thermally expands to the same level or more, and the contact between the refrigerant jacket 9 and the magnetic metal part 10 is maintained.
  • the solder 12 When the temperature of the refrigerant jacket 9 rises and the temperature of the end surface 9b of the refrigerant jacket 9 becomes equal to or higher than the melting point of the solder 12, the solder 12 is melted. When the solder 12 melts, the adhesion between the solder 12 and the fin base 71 of the heat sink 7 increases, and the heat transfer rate from the solder 12 to the fin base 71 increases, so the temperature of the portion of the fin base 71 in contact with the solder 12 increases rapidly. To rise. When the temperature of the portion of the fin base 71 in contact with the solder 12 becomes equal to or higher than the melting point of the solder 12, the solder 12 and the fin base 71 form an alloy layer.
  • the generation of the high-frequency magnetic flux by the high-frequency induction heating device 16 is stopped, and the induction heating of the magnetic metal part 10 is stopped, so that the temperature of the solder 12 is lowered below the melting point, and the solder 12 is solidified, whereby the refrigerant jacket. 9 and the heat sink 7 are joined by solder 12.
  • the opening of the refrigerant jacket 9 is liquid-tightly sealed by the fin base 71 of the heat sink 7 joined by the solder 12.
  • the power semiconductor device 1 can be obtained.
  • the power semiconductor device 1 can be reduced in weight because it does not have the magnetic metal portion 10 as compared with the power semiconductor device of the first embodiment in which the magnetic metal portion 10 is joined to the refrigerant jacket 9. Since the process of joining the part 10 by welding or brazing can be omitted, an effect that the manufacturing cost of the power semiconductor device 1 can be reduced is obtained.
  • the solder 12 is not disposed on the magnetic metal portion 10 but on the refrigerant jacket 9, it is magnetic by induction heating. Since the heat generated in the metal part 10 is transferred from the magnetic metal part 10 to the refrigerant jacket 9 and from the refrigerant jacket 9 to the solder 12, compared with the manufacturing method of the power semiconductor device of the first to fourth embodiments, The temperature rise of the solder 12 takes time, and the temperature control response is slow. In the power semiconductor devices 1 according to the first to fourth embodiments, since the solder 12 is disposed on the magnetic metal portion 10, heat is directly transferred from the magnetic metal portion 10 to the solder 12.
  • the power semiconductor device 1 is preferably manufactured by the manufacturing method described above.
  • the manufacturing method of the power semiconductor device according to the fifth embodiment can reduce the manufacturing cost of the power semiconductor device 1 because the step of joining the magnetic metal part 10 to the refrigerant jacket 9 by welding or brazing can be omitted. it can. Therefore, in order to obtain the power semiconductor device 1 at a lower cost, the power semiconductor device 1 may be manufactured by the manufacturing method shown in the fifth embodiment.
  • FIG. 11 is a sectional view showing a power semiconductor device and a method for manufacturing the power semiconductor device according to the sixth embodiment of the present invention.
  • FIG. 11A is a diagram showing a method for manufacturing a power semiconductor device
  • FIG. 11B is a diagram showing a power semiconductor device manufactured by the manufacturing method in FIG. 11A.
  • the same reference numerals as those in FIGS. 1 and 5 denote the same or corresponding components, and the description thereof is omitted.
  • the cooler does not have a magnetic metal part, and is configured by a refrigerant jacket made of a nonmagnetic metal material. The structure for soldering the heat sink is different.
  • the power module 2 of the power semiconductor device 1 is manufactured by the manufacturing method described in the first embodiment. That is, the power module 2 is manufactured by bonding the insulating substrate 5 to which the semiconductor element 3 is bonded with the bonding material 4 to the fin base 71 of the heat sink 7 with the bonding material 6.
  • the cooler 8 is composed only of a refrigerant jacket 9 made of a nonmagnetic metal material.
  • the refrigerant jacket 9 is manufactured by cutting or casting of aluminum or aluminum alloy, for example.
  • the refrigerant jacket 9 is provided with the side wall 91 surrounding the opening into which the heat dissipating fins 72 of the heat sink 7 are inserted, and the side wall 91 extends over the entire periphery of the opening. It is provided continuously.
  • the side wall 91 of the refrigerant jacket 9 is provided with a refrigerant inflow port and a refrigerant outflow port, but the end surface 91a side of the side wall 91 has a continuous annular shape and is electrically closed circuit.
  • the side wall 91 is a conductive path through which an induced current flows in an annular shape around the opening when high-frequency induction heating is performed.
  • the coolant jacket 9 has a plating film such as nickel plating on the surface, which has good solder wettability and good corrosion resistance.
  • the plating film of nickel plating may be, for example, about 3 ⁇ m to 5 ⁇ m, and may have a thickness that does not cause induction heating of the nickel plating film by high-frequency magnetic flux.
  • the solder 12 After forming a plating film that improves solder wettability on the end surface 9b of the side wall 91 of the refrigerant jacket 9 constituting the cooler 8, the solder 12 is disposed on the end surface 9b. As described in the above embodiments, the solder 12 may be paste solder or plate solder. Further, it is preferable that after the solder 12 is disposed on the end face 9b, the solder 12 is melted at one end and then solidified and preformed. As shown in FIG. 4B of the first embodiment, the solder 12 is continuously provided all around the opening of the refrigerant jacket 9 that is the cooler 8.
  • the heat sink 7 of the power module 2 is disposed on the solder 12 on the end surface 9b in contact with the solder 12.
  • the solder 12 is provided between the refrigerant jacket 9 constituting the cooler 8 and the heat sink 7 of the power module 2.
  • the coil of the high-frequency induction heating device 16 is arranged around the refrigerant jacket 9 constituting the cooler 8.
  • the coil of the high-frequency induction heating device 16 is a cylindrical coil having a width larger than the width of the cooler 8, and the coil winding is a plan view when the refrigerant jacket 9 is viewed from above.
  • the line is arranged so as to surround the side wall 91.
  • the coil of the high-frequency induction heating device 16 is preferably a cylindrical coil having a square cross section so that the coil winding is substantially parallel to the side wall 91 in accordance with the shape of the refrigerant jacket 9 in plan view.
  • the distance between the coil winding and the side wall 91 of the refrigerant jacket 9 can be shortened so that an induced current can flow efficiently through the side wall 91. Induction heating can be performed efficiently.
  • a part of the lower part of the cooler 8 is provided below the upper end of the cylindrical coil of the high-frequency induction heating device 16. If the distance between the upper end of the cylindrical coil and the lower end of the cooler 8 is greatly separated, the efficiency of induction heating of the refrigerant jacket 9 is deteriorated, and the end surface 9b of the side wall 91 of the refrigerant jacket 9 during induction heating and the heat sink 7 are reduced. This is not preferable because the temperature difference from the portion where the bonding material 6 is bonded becomes small.
  • a high frequency current is supplied from the high frequency induction heating device 16 to the coil.
  • the frequency of the high-frequency current supplied to the coil is preferably higher than the frequency in the case of induction heating the magnetic metal part of the first to fifth embodiments, and may be 60 to 100 kHz, for example.
  • a high frequency magnetic flux generated by the high frequency current flowing through the coil is linked to the refrigerant jacket 9 made of a nonmagnetic metal material, and an induction current is generated in the refrigerant jacket 9.
  • the refrigerant jacket 9 is formed such that the side wall 91 forms a closed circuit, and the closed circuit formed by the side wall 91 has a coil disposed so as to be substantially parallel to the coil winding of the high-frequency induction heating device 16. Therefore, the closed circuit formed by the side wall 91 is easily interlinked with the high-frequency magnetic flux generated by the coil of the high-frequency induction heating device 16. For this reason, as shown in FIG. 11A, a large induced current flows annularly around the opening on the side wall 91 of the refrigerant jacket 9.
  • the refrigerant jacket 9 that is the cooler 8 has a side wall made of metal that is annularly continuous around the opening portion into which the heat radiation fin 72 of the heat sink 7 is inserted. Therefore, even if the cooler 8 is composed only of a non-magnetic metal material, the cooler 8 is induction-heated to melt the solder 12 disposed between the cooler 8 and the heat sink 7, 8 and the heat sink 7 can be soldered together.
  • the manufacturing method of the power semiconductor device described in the first embodiment is the same. Since the melted solder 12 has a high heat transfer coefficient with the fin base 71 of the heat sink 7, the temperature of the fin base 71 efficiently rises. When the temperature of the portion of the fin base 71 in contact with the solder 12 becomes equal to or higher than the melting point of the solder 12, the solder 12 wets and spreads on the fin base 71 to form an alloy layer.
  • the cooler 8 is composed only of the non-magnetic metal material refrigerant jacket 9, and the opening of the cooler 8 is formed by the nonmagnetic metal material heat sink 7. It is configured to be liquid-tightly sealed by solder bonding. For this reason, similarly to the power semiconductor device described in the first embodiment, the power semiconductor device 1 having high pressure resistance and heat resistance of the sealing portion of the cooler 8 can be obtained. And since the refrigerant jacket 9 made of a nonmagnetic metal material is induction-heated to melt and solder the solder 12, the temperature control of the refrigerant jacket 9 for heating the solder 12 can be performed with high accuracy. The reliability of the joint part by the joining material 4 and the joining material 6 in the power module 2 can be increased.
  • the power of the high-frequency current supplied to the coil of the high-frequency induction heating device 16 may be a constant value from the start to the end of induction heating, but it is preferable to control the power according to the heating situation.
  • the power of the high-frequency current supplied to the coil of the high-frequency induction heating device 16 may be changed in steps in several steps, or may be changed smoothly using automatic control such as PID control.
  • a large amount of electric power is input to the coil of the high frequency induction heating device 16, and when the temperature of the end surface 9 b provided with the solder 12 of the cooler 8 reaches the vicinity of the melting point of the solder 12, the electric power is reduced, When the solder 12 starts to melt, power control may be performed such that the power is further reduced.
  • the power of the high-frequency current input to the coil is 100% from the start of induction heating until the end surface 9b of the cooler 8 reaches the melting point of the solder 12, and after the end surface 9b reaches the melting point of the solder 12, the solder 12
  • the power control may be 25% until the melting starts, 10% until the solder 12 starts to melt and gets wet with the fin base 71 of the heat sink 7, and 0% when the solder 12 gets wet with the fin base 71. .
  • the solder 12 is more surely wetted by the fin base 71 to form a strong alloy layer, and the temperature of the joint portion between the heat sink 7 and the insulating substrate 5 is equal to or higher than the melting point of the joint material 6. Can be suppressed.
  • Controlling the power of the high-frequency current supplied to the coil at the time of induction heating is performed by induction heating and soldering the cooler 8 made of a nonmagnetic metal material, as shown in the sixth embodiment.
  • it is preferable to control the power of the high-frequency current also when the magnetic metal material is induction-heated and soldered as shown in the first to fifth embodiments.
  • the cooler 8 even when the cooler 8 is made of a non-magnetic metal material, the cooler 8 has an induced current that continues in an annular shape around the opening. Since the side wall is provided so as to form a conductive path, the cooler 8 can be induction heated by flowing a large induction current, and the cooler 8 and the heat sink 7 can be soldered by induction heating. . For this reason, when the opening of the cooler 8 is sealed with the heat sink 7 of the power module 2, the temperature rise of the bonding material 4 and the bonding material 6 bonded to the insulating substrate 5 can be suppressed.
  • the power semiconductor device including the cooler having a high pressure resistance and heat resistance is obtained.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention porte sur un procédé de fabrication d'un dispositif à semi-conducteur de puissance (1), qui comprend : une étape consistant à assembler un substrat (5) à une première surface d'assemblage d'un dissipateur thermique (7) à l'aide d'un élément d'assemblage (6), le substrat (5) étant pourvu d'un élément à semi-conducteur (3), et le dissipateur thermique (7) comprenant un matériau métallique non magnétique ; une étape consistant à former une brasure (12) autour de l'ouverture d'un refroidisseur (8) comprenant du métal et présentant une section transversale prenant une forme concave, le refroidisseur (8) comportant une paroi latérale (91) située autour de l'ouverture ; et une étape consistant à faire fondre la brasure à l'aide de chaleur générée par chauffage par induction d'un élément métallique compris dans le refroidisseur (8) tout en amenant une seconde surface d'assemblage, située du côté arrière de la première surface d'assemblage du dissipateur thermique (7), à entrer en contact avec la brasure (12), de manière à souder le dissipateur thermique (7) et le refroidisseur (8) l'un à l'autre. Il est possible d'augmenter la résistance à la pression et la résistance à la chaleur d'une partie d'étanchéité du refroidisseur (8) du dispositif à semi-conducteur de puissance (1) et d'améliorer la fiabilité sans refusion de l'élément d'assemblage (6) avec lequel le substrat (5) a été assemblé.
PCT/JP2016/079968 2015-10-20 2016-10-07 Procédé de fabrication de dispositif à semi-conducteur de puissance et dispositif à semi-conducteur de puissance WO2017069005A1 (fr)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109668128A (zh) * 2019-03-04 2019-04-23 上海应用技术大学 一种采用铁磁流体散热的大功率led冷却系统
WO2019111751A1 (fr) * 2017-12-05 2019-06-13 昭和電工株式会社 Dispositif de refroidissement de semi-conducteur
EP3734646A1 (fr) * 2019-05-02 2020-11-04 Audi AG Composant semi-conducteur, véhicule automobile et procédé de fabrication d'un composant semi-conducteur
CN112750600A (zh) * 2020-12-29 2021-05-04 华进半导体封装先导技术研发中心有限公司 一种基于微流道的可调式电感及其制造方法
CN114144878A (zh) * 2019-07-26 2022-03-04 三菱电机株式会社 半导体模块

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102131051B1 (ko) * 2019-06-03 2020-07-07 성균관대학교산학협력단 자기력을 이용한 금속 재료 간의 천이액상접합 방법
JP7459163B2 (ja) 2022-04-19 2024-04-01 三菱電機株式会社 半導体装置およびその製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06112609A (ja) * 1992-09-25 1994-04-22 Yokogawa Electric Corp プリント配線装置
JPH0969683A (ja) * 1995-08-30 1997-03-11 Sony Corp 金属部品の半田付け方法及びその装置
JPH11135895A (ja) * 1997-10-28 1999-05-21 Matsushita Electric Works Ltd 回路基板および部品搭載方法
JP2008166680A (ja) * 2006-12-05 2008-07-17 Toyota Industries Corp 半導体装置及び半導体装置の製造方法
JP2009164303A (ja) * 2007-12-28 2009-07-23 Toyota Motor Corp はんだ付け装置及びはんだ付け方法
WO2014045766A1 (fr) * 2012-09-19 2014-03-27 富士電機株式会社 Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur
JP2014136249A (ja) * 2013-01-18 2014-07-28 Mitsubishi Electric Corp はんだ付け装置、半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06112609A (ja) * 1992-09-25 1994-04-22 Yokogawa Electric Corp プリント配線装置
JPH0969683A (ja) * 1995-08-30 1997-03-11 Sony Corp 金属部品の半田付け方法及びその装置
JPH11135895A (ja) * 1997-10-28 1999-05-21 Matsushita Electric Works Ltd 回路基板および部品搭載方法
JP2008166680A (ja) * 2006-12-05 2008-07-17 Toyota Industries Corp 半導体装置及び半導体装置の製造方法
JP2009164303A (ja) * 2007-12-28 2009-07-23 Toyota Motor Corp はんだ付け装置及びはんだ付け方法
WO2014045766A1 (fr) * 2012-09-19 2014-03-27 富士電機株式会社 Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur
JP2014136249A (ja) * 2013-01-18 2014-07-28 Mitsubishi Electric Corp はんだ付け装置、半導体装置の製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019111751A1 (fr) * 2017-12-05 2019-06-13 昭和電工株式会社 Dispositif de refroidissement de semi-conducteur
JP2019102677A (ja) * 2017-12-05 2019-06-24 昭和電工株式会社 半導体冷却装置
CN111164748A (zh) * 2017-12-05 2020-05-15 昭和电工株式会社 半导体冷却装置
JP7033443B2 (ja) 2017-12-05 2022-03-10 昭和電工株式会社 半導体冷却装置
CN111164748B (zh) * 2017-12-05 2024-01-02 株式会社力森诺科 半导体冷却装置
CN109668128A (zh) * 2019-03-04 2019-04-23 上海应用技术大学 一种采用铁磁流体散热的大功率led冷却系统
EP3734646A1 (fr) * 2019-05-02 2020-11-04 Audi AG Composant semi-conducteur, véhicule automobile et procédé de fabrication d'un composant semi-conducteur
US11848252B2 (en) 2019-05-02 2023-12-19 Audi Ag Semiconductor component, motor vehicle, and method for producing a semiconductor component
CN114144878A (zh) * 2019-07-26 2022-03-04 三菱电机株式会社 半导体模块
CN112750600A (zh) * 2020-12-29 2021-05-04 华进半导体封装先导技术研发中心有限公司 一种基于微流道的可调式电感及其制造方法

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