KR102131051B1 - 자기력을 이용한 금속 재료 간의 천이액상접합 방법 - Google Patents

자기력을 이용한 금속 재료 간의 천이액상접합 방법 Download PDF

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KR102131051B1
KR102131051B1 KR1020190065101A KR20190065101A KR102131051B1 KR 102131051 B1 KR102131051 B1 KR 102131051B1 KR 1020190065101 A KR1020190065101 A KR 1020190065101A KR 20190065101 A KR20190065101 A KR 20190065101A KR 102131051 B1 KR102131051 B1 KR 102131051B1
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South Korea
Prior art keywords
base metal
magnetic force
metal
liquid phase
bonding
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KR1020190065101A
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English (en)
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정승부
민경득
정광호
이충재
정학산
김재하
황병욱
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성균관대학교산학협력단
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Priority to KR1020190065101A priority Critical patent/KR102131051B1/ko
Priority to US16/869,806 priority patent/US11094663B2/en
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Publication of KR102131051B1 publication Critical patent/KR102131051B1/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K25/00—Slag welding, i.e. using a heated layer or mass of powder, slag, or the like in contact with the material to be joined
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B23K1/203—Fluxing, i.e. applying flux onto surfaces
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
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Abstract

본 발명은 자기력을 이용한 금속 재료 간의 천이액상접합 방법에 관한 것이며, 특히 자기력을 천이액상접합공정에 적용하여 금속 재료 간의 천이액상접합시간을 단축하고 높은 접합강도를 얻기 위한 방법에 관한 것이다.
본 발명은 자기력을 이용하여 모재에 따라 강자성체 모재에는 인력을 작용시키고 반자성체 모재에는 척력을 작용시켜 확산을 빠르게 하여, 두 가지 모재의 천이액상접합 시 접합시간을 기존에 비해 단축시키고 kirkendall voids, voids 생성과 금속간화합물의 층상구조를 억제하여 접합 강도를 증가시킴을 목적으로 한다.

Description

자기력을 이용한 금속 재료 간의 천이액상접합 방법 {METHOD OF TRANSIENT LIQUID PHASE BONDING FOR METAL MATERIAL BONDING USING MAGNETIC FORCE}
본 발명은 자기력을 이용한 금속 재료 간의 천이액상접합 방법에 관한 것이며, 특히 자기력을 천이액상접합공정에 적용하여 금속 재료 간의 천이액상접합시간을 단축하고 높은 접합강도를 얻기 위한 방법에 관한 것이다.
환경오염 규제에 따라 최근 전기자동차의 수요가 증대되고 있다. 따라서 그에 들어가는 중요한 부품인 파워모듈에 대한 연구가 진행되고 있다. 파워모듈 내 전력반도체는 현재 Si 반도체가 쓰이고 있지만, 차세대 전력반도체로서 높은 항복전압 및 전력변환효율, 고온안정성이 요구됨에 따라 화합물 반도체인 SiC 칩 적용에 대한 논의가 업계에서 계속되고 있다. 하지만 SiC 칩은 파워모듈 구동시 온도가 Si 칩과 달리 250도 가까이 증가하기 때문에 기존에 사용하던 접합재료인 SAC305(Sn-3.0Ag-0.5Cu, 녹는점: 217도)는 사용하기 어렵다. 이에 따라, 고온에서 내열성을 가지는 접합에 대한 연구 및 개발이 요구되고 있다.
또한 우주 항공 분야에서도 고온에서 안정한 접합방법을 찾기 위해 많은 연구가 진행되고 있다. 첫 번째 후보로 Ag 소결을 통해 접합하는 방법이 있지만, 가격적으로 비싸고, 두 번째 후보로 고온 솔더가 있지만, Au가 포함되어 있어 이 또한 가격적으로 부담이 된다. 최근 널리 연구되고 있는 천이액상접합은 확산을 통해 금속간화합물을 형성시키는 접합방법으로서 가격적으로 경쟁력이 있다. 하지만 확산에 의한 접합이기 때문에 접합시간이 길다. 또한 무가압 공정 시, 금속간 화합물 형성을 통한 접합방법이기 때문에 필연적으로 kirkendall voids, voids가 형성되어 접합강도가 낮은 편이다. 통상적으로 알려진 천이액상접합시간 단축으로서는 온도를 높여 확산을 빠르게 하는 것이다. 하지만 높은 온도는 모듈에 warpage 또는 열화현상을 야기하기 때문에 높은 온도로 접합을 하는 것은 산업적으로 어렵다.
예를 들면, 기판으로서 사용되는 금속인 Ni은 부식에 대한 저항을 위해 사용되고, SiC 칩의 표면처리는 주로 Ti/Cu를 사용한다. 따라서 가장 이상적인 모재금속은 Ni과 Cu를 접합하는 방식이다. 이뿐만 아니라 산업적으로 다양한 동종 혹은 이종 금속재료간의 접합방법이 필요한 실정이다. 기존의 기술인 천이액상접합기술을 적용하면 확산이 열과 시간에만 영향을 받기 때문에 접합 시간이 오래 걸리고 kirkendall voids, voids가 과도하게 형성된다. 또한 이종재료 접합의 경우 접합부 내부의 층상구조가 형성되어 접합부에 취약한 부분이 생성된다.
본 발명은 자기력을 이용하여 모재에 따라 강자성체 모재에는 인력을 작용시키고 반자성체 모재에는 척력을 작용시켜 확산을 빠르게 하여, 모재간의 천이액상 접합시 접합시간을 기존에 비해 단축시키고 kirkendall voids, voids 생성과 금속간화합물의 층상구조를 억제하여 접합 강도를 증가시킴을 목적으로 한다.
본 발명의 일 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법은, 반자성체 또는 상자성체인 제 1 모재 금속을 준비하고, 강자성체인 제 2 모재 금속을 준비하는 단계; 상기 모재 금속들보다 융점이 낮은 저융점 금속 분말 및 유기 용매를 혼합하여 페이스트를 제조하는 단계; 상기 제 1 모재 금속; 상기 페이스트; 및 상기 제 2 모재 금속의 순서로 배치하는 단계; 상기 제 1 모재 금속의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 자석을 배치하는 단계; 및 상기 모재 금속들의 융점 및 상기 저융점 금속 분말의 융점 사이의 온도에서 열과 자기력을 이용하여 접합 공정을 수행하는 단계를 포함한다.
상기 유기 용매는 플럭스(flux) 또는 분산제와 용매가 이용된다.
상기 제 1 모재 금속의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 전선을 배치하여 전류에 의해 만들어지는 자기력을 제공한다.
본 발명의 일 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법은, 반자성체인 제 1 모재 금속을 준비하고, 상자성체인 제 2 모재 금속을 준비하는 단계; 상기 모재 금속들보다 융점이 낮은 저융점 금속 분말 및 유기 용매를 혼합하여 페이스트를 제조하는 단계; 상기 제 1 모재 금속; 상기 페이스트; 및 상기 제 2 모재 금속의 순서로 배치하는 단계; 상기 제 1 모재 금속의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 자석을 배치하는 단계; 및 상기 모재 금속들의 융점 및 상기 저융점 금속 분말의 융점 사이의 온도에서 열과 자기력을 이용하여 접합 공정을 수행하는 단계를 포함한다.
상기 유기 용매는 플럭스(flux) 또는 분산제와 용매가 이용된다.
상기 제 1 모재 금속의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 전선을 배치하여 전류에 의해 만들어지는 자기력을 제공한다.
본 발명의 일 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법은, 강자성체인 제 1 모재 금속이 일면에 처리된 칩(chip)을 준비하고, 강자성체인 제 2 모재 금속을 준비하는 단계; 상기 모재 금속들보다 융점이 낮은 저융점 금속 분말 및 유기 용매를 혼합하여 페이스트를 제조하는 단계; 상기 제 1 모재 금속이 일면에 처리된 칩; 상기 페이스트; 및 상기 제 2 모재 금속의 순서로 배치하는 단계로서, 상기 제 1 모재 금속이 상기 제 2 모재 금속을 향하도록 배치하는, 단계; 상기 칩의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 자석을 배치하는 단계; 및 상기 모재 금속들의 융점 및 상기 저융점 금속 분말의 융점 사이의 온도에서 열과 자기력을 이용하여 접합 공정을 수행하는 단계를 포함한다.
상기 유기 용매는 플럭스 또는 분산제와 용매가 이용된다.
상기 칩의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 전선을 배치하여 전류에 의해 만들어지는 자기력을 제공한다.
본 발명의 일 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법은, 반자성체인 제 1 모재 금속이 일면에 처리된 칩(chip)을 준비하고, 반자성체인 제 2 모재 금속을 준비하는 단계; 상기 모재 금속들보다 융점이 낮은 저융점 금속 분말 및 유기 용매를 혼합하여 페이스트를 제조하는 단계; 상기 제 1 모재 금속이 일면에 처리된 칩; 상기 페이스트; 및 상기 제 2 모재 금속의 순서로 배치하는 단계로서, 상기 제 1 모재 금속이 상기 제 2 모재 금속을 향하도록 배치하는, 단계; 상기 제 2 모재 금속의 외면으로서 상기 제 1 모재 금속을 향하는 면의 반대 면에 자석을 배치하는 단계; 및 상기 모재 금속들의 융점 및 상기 저융점 금속 분말의 융점 사이의 온도에서 열과 자기력을 이용하여 접합 공정을 수행하는 단계를 포함한다.
상기 유기 용매는 플럭스 또는 분산제와 용매가 이용된다.
상기 제 2 모재 금속의 외면으로서 상기 제 1 모재 금속을 향하는 면의 반대 면에 전선을 배치하여 전류에 의해 만들어지는 자기력을 제공한다.
본 발명의 접합 방법을 적용하면 자기력을 이용하여 금속 재료 접합 시 천이액상접합 방법의 가장 큰 단점인 1) 접합시간을 단축시킬 수 있다. 또한 2) kirkendall voids, voids를 보다 적게 형성시켜 접합신뢰성을 높게 할 수 있고, 3) 이종 재료 접합의 경우, 접합부의 금속간 화합물의 층상구조를 억제할 수 있다. 4) 동종 자성체 접합의 경우, 자기력을 인가하여 칩 부분의 금속의 확산은 최소화시키고 기판의 금속만 확산시켜 천이액상접합부의 신뢰성을 확보할 수 있다.
따라서 본 발명을 이용하면 전기자동차의 파워모듈의 SiC 칩 접합, 우주 항공의 전자부품 접합 등 고온에서 작동하는 전기적인 인터커넥션 접합 기술로서 기존보다 더욱 짧은 시간에 접합을 하고 높은 접합강도를 얻음으로서 산업적으로 유용하게 사용될 수 있다.
도 1은 기존의 무가압 천이액상접합을 도식화한 도면이다.
도 2a는 본 발명의 일 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법의 순서도를 도시하고, 도 2b 내지 2e는 이의 구체적인 실시예의 모식도를 도시한다.
도 3a는 본 발명의 추가적인 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법의 순서도를 도시하고, 도 3b 내지 3c는 이의 구체적인 실시예의 모식도를 도시한다.
도 4a는 본 발명의 추가적인 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법의 순서도를 도시하고, 도 4b는 이의 구체적인 실시예의 모식도를 도시한다.
도 5a는 본 발명의 추가적인 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법의 순서도를 도시하고, 도 5b는 이의 구체적인 실시예의 모식도를 도시한다.
도 6은 본 발명의 자기력을 이용한 무가압 천이액상접합(TLP) 방법(ex. Cu to Ni)의 모식도이다.
도 7은 본 발명의 자기력을 이용하여 무가압 천이액상접합 방법으로 접합한 SEM 사진이다.
도 8은 본 발명의 접합부를 EDS 분석을 이용해 mapping을 한 사진이다.
도 9는 기존의 접합방법과 본 발명의 접합방법의 접합강도를 비교한 그래프이다.
다양한 실시예들이 이제 도면을 참조하여 설명되며, 전체 도면에서 걸쳐 유사한 도면번호는 유사한 엘리먼트를 나타내기 위해서 사용된다. 설명을 위해 본 명세서에서, 다양한 설명들이 본 발명의 이해를 제공하기 위해서 제시된다. 그러나 이러한 실시예들은 이러한 특정 설명 없이도 실행될 수 있음이 명백하다. 다른 예들에서, 공지된 구조 및 장치들은 실시예들의 설명을 용이하게 하기 위해서 블록 다이아그램 형태로 제시된다.
이하, 첨부한 도면을 참조하여 본 발명의 실시예에 대해 상세히 설명한다. 본 발명은 다양한 변경을 가할 수 있고 여러 가지 형태를 가질 수 있는 바, 특정 실시예들을 도면에 예시하고 본문에 상세하게 설명하고자 한다. 그러나 이는 본 발명을 특정한 개시 형태에 대해 한정하려는 것이 아니며, 본 발명의 사상 및 기술 범위에 포함되는 모든 변경, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다. 각 도면을 설명하면서 유사한 참조부호를 유사한 구성요소에 대해 사용하였다.
본 출원에서 사용한 용어는 단지 특정한 실시 예를 설명하기 위해 사용된 것으로서 본 발명을 한정하려는 의도가 아니다. 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 본 출원에서, "포함하다" 또는 "가지다" 등의 용어는 명세서 상에 기재된 특징, 단계, 동작, 구성요소, 부분품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 단계, 동작, 구성요소, 부분품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다.
천이액상(Transient liquid phase) 접합 방법은 고융점 금속인 모재와 저융점 금속의 접합재를 사용해 접합하는 방법이다. 접합 공정은 저융점 금속과 고융점 금속의 녹는점 사이에서 진행하여, 저융점 금속과 고융점 금속이 상호확산을 통해 금속간 화합물(Intermetallic compound)를 형성한다. 금속간 화합물은 저융점 금속보다 높은 녹는점을 가지기 때문에, 고온에서도 녹지 않는 특성을 보인다. 하지만 무가압 천이액상 접합의 경우, 접합재 부분인 저융점 금속이 녹아 고융점 금속과 반응하는 원리이기 때문에 이는 필연적으로 확산에 의한 kirkendall voids가 형성된다. 또한 paste를 이용한 접합 시, 유기용매가 기화되면서 생기는 voids가 많이 생긴다. 1) 따라서 이러한 kirkendall voids, voids은 접합강도를 낮게 한다. 2) 또한 저융점 금속이 고융점 금속과 금속간 화합물 반응을 하여 전체적으로 금속간 화합물이 되기에는 공정시간이 너무 긴 문제점이 있다.
특히, 최근 중요시되고 있는 이종재료 접합재료에서는 천이액상접합 방법으로 접합을 하였을 때, 3) 각 이종금속 모재에 따라 접합부의 층상구조가 생기기 때문에 접합부의 강도는 더욱 낮아진다. 이러한 문제점에 대한 자세한 모식도는 도 1에 상세히 도식화되어 있다.
도 1은 기존의 무가압 천이액상접합을 도식화한 도면이다. 열을 통해 접합을 진행하면 Cu-Sn, Ni-Sn IMC 형성과 함께 kirkendall voids 및 유기용매가 기화하여 voids가 발생한다. 또한, 확산에 의해서 금속간 화합물을 형성하기 때문에 위쪽에는 Cu-Sn IMC, 아래쪽에는 Ni-Sn IMC 위주로 생성되고, 그 가운데에 (Cu,Ni)-Sn IMC가 형성된다. 이러한 다층 구조의 금속간화합물 층은 접합강도를 약하게 하는데 주요인이 된다. 또한, 전체적으로 금속간 화합물이 되는데도 걸리는 시간은 매우 길다.
본 발명에서는 다양한 형태의 자기력을 이용한 금속 재료 간의 천이액상접합 방법이 가능하다. 본 발명에서는 열 이외에 자기력을 추가적으로 이용하므로 모재 금속에 반자성체, 상자성체 또는 강자성체를 선택적으로 이용하게 된다.
모재 금속은 어느 하나는 기판이고, 어느 하나는 칩(chip)일 수 있어서 기판 상에 칩을 올리는 형태로 접합이 이루어지는 것이 일반적이다. 본 발명에서는 제 1 모재 금속 및 제 2 모재 금속은 각각 어느 하나는 기판이고, 나머지 하나는 칩일 수 있다.
반자성체는 C, Cu, Zn, Ga, Ge, Ag, Cd, Sb, Au, Hg, Pb, Bi, Po, Rn, 또는 이들의 조합물질을 포함하고, 반자성체와 다른 자성체와의 조합으로 만들어지는 반자성체도 포함한다.
상자성체는 Sn, Pd, W, Mo, Pt, In, Al, 또는 이들의 조합물질을 포함하고, 상자성체와 다른 자성체와의 조합으로 만들어지는 상자성체도 포함한다.
강자성체는 Cr, Mn, Fe, Co, Ni, Ce, Nd, Fe2O3, FeOFe2O3, NiOFe2O3, CuOFe2O3, MgOFe2O3, MnBi, MnSb, MnOFe2O3, Y3Fe5O12, CrO2, MnAs, EuO, 페라이트계 재료 또는 이들의 조합물질을 포함하고, 강자성체와 다른 자성체와의 조합으로 만들어지는 강자성체도 포함한다.
모재 금속들 사이에는 모재 금속들보다 융점이 낮은 저융점 금속 분말 및 유기 용매를 혼합하여 페이스트가 배치된다. 저융점 금속 분말은 모재 금속보다 융점이 낮은 금속 분말을 의미한다.
유기 용매로는 플럭스가 이용될 수 있다. 또한, 유기 용매로는 분산제와 용매가 이용될 수도 있다. 이러한 플럭스 또는 분산제와 용매는 금속 분말의 산화 방지 및 프린팅을 위해 페이스트를 제조할 때 혼합된다.
분산제로는 PVP 등의 분산제가 이용될 수 있고, 용매로는 물, 알콜계, 에틸렌글리콜계 등이 이용될 수 있다.
유기 용매로 플럭스를 사용하는 경우에는 접합 공정을 수행한 이후 잔존 플럭스를 제거하기 위해 디플럭스(de-flux) 공정을 실시할 수 있다.
이하에서는 4가지의 서로 상이한 자기력을 이용한 금속 재료 간의 천이액상접합 방법에 대해 차례대로 설명하도록 하겠다. 이 경우 서로 공통되는 부분에 대해서는 반복 설명을 생략하고, 특징 위주로 설명하도록 하겠다.
CASE 1) 자석/반자성체 또는 상자성체/페이스트/강자성체로 배치된 경우
제 1 실시예에서는 제 1 모재 금속으로 반자성체 또는 상자성체가 이용되고, 제 2 모재 금속으로는 강자성체가 이용되며, 제 1 모재 금속의 외면으로서 제 2 모재 금속을 향하는 면의 반대 면에 자석이 배치된다.
도 2a는 본 발명의 일 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법의 순서도를 도시하고, 도 2b 내지 2e는 이의 구체적인 실시예의 모식도를 도시한다.
본 발명의 일 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법은, 반자성체 또는 상자성체인 제 1 모재 금속을 준비하고, 강자성체인 제 2 모재 금속을 준비하는 단계(S 210); 모재 금속들보다 융점이 낮은 저융점 금속 분말 및 유기 용매를 혼합하여 페이스트를 제조하는 단계(S 220); 제 1 모재 금속; 페이스트; 및 제 2 모재 금속의 순서로 배치하는 단계(S 230); 제 1 모재 금속의 외면으로서 제 2 모재 금속을 향하는 면의 반대 면에 자석을 배치하는 단계(S 240); 및 모재 금속들의 융점 및 저융점 금속 분말의 융점 사이의 온도에서 열과 자기력을 이용하여 접합 공정을 수행하는 단계(S 250)를 포함한다.
유기 용매는 플럭스(flux) 또는 분산제와 용매가 이용될 수 있다.
한편, 상기 제 1 모재 금속의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 전선을 배치하여 전류에 의해 만들어지는 자기력을 제공할 수 있다. 이러한 전선은 자석 대신 사용될 수도 있고, 자석과 함께 사용될 수도 있다.
도 2b는 자석(40)이 위쪽에 위치하고, 자석과 가까운 쪽에 반자성체(제 1 모재 금속; 10), 먼 쪽에 강자성체(제 2 모재 금속; 20)를 위치시킨다. 그리고 접합물질(30)로서 상자성체인 페이스트 또는 preform(박판) 형태로 삽입하여 접합을 실시한다.
강자성체는 자석과의 인력에 의해 접합부로의 확산이 빠르게 일어나고, 반자성체는 자석과의 척력에 의해 접합부로의 확산이 빠르게 일어나, 1) 접합부의 void 감소에 탁월한 효과를 보이고 2) 접합부가 전체적으로 섞여 균일한 조성을 가지게 되고 3) 빠르게 확산되기 때문에 접합시간이 매우 짧다.
도 2c는 자석(40)이 아래쪽에 위치하고, 자석과 가까운 쪽에 반자성체(10), 먼 쪽에 강자성체(20)를 위치시킨다. 그리고 접합물질(30)로서 상자성체인 페이스트 또는 preform(박판)형태로 삽입하여 접합을 실시한다.
강자성체는 자석과의 인력에 의해 접합부로의 확산이 빠르게 일어나고, 반자성체는 자석과의 척력에 의해 접합부로의 확산이 빠르게 일어나, 1) 접합부의 void 감소에 탁월한 효과를 보이고 2) 접합부가 전체적으로 섞여 균일한 조성을 가지게 되고 3) 빠르게 확산되기 때문에 접합시간이 매우 짧다.
도 2d는 자석(40)이 위에 위치하고, 자석과 가까운 쪽에 상자성체(제 1 모재 금속; 10), 먼 쪽에 강자성체(제 2 모재 금속; 20)을 위치시킨다. 그리고 접합물질(30)이 페이스트 또는 박판 형태로 삽입되어 접합을 실시한다.
도 2e는 자석(40)이 아래에 위치하고, 자석과 가까운 쪽에 상자성체(10), 먼 쪽에 강자성체(20)를 위치시킨다. 그리고 접합물질(30)이 페이스트 또는 박판 형태로 삽입되어 접합을 실시한다.
CASE 2) 자석/반자성체/페이스트/상자성체로 배치된 경우
제 2 실시예에서는 제 1 모재 금속으로 반자성체가 이용되고, 제 2 모재 금속으로는 상자성체가 이용되며, 제 1 모재 금속의 외면으로서 제 2 모재 금속을 향하는 면의 반대 면에 자석이 배치된다.
도 3a는 본 발명의 추가적인 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법의 순서도를 도시하고, 도 3b 내지 3c는 이의 구체적인 실시예의 모식도를 도시한다.
본 발명의 추가적인 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법은, 반자성체인 제 1 모재 금속을 준비하고, 상자성체인 제 2 모재 금속을 준비하는 단계(S 310); 모재 금속들보다 융점이 낮은 저융점 금속 분말 및 유기 용매를 혼합하여 페이스트를 제조하는 단계(S 320); 제 1 모재 금속; 페이스트; 및 제 2 모재 금속의 순서로 배치하는 단계(S 330); 제 1 모재 금속의 외면으로서 제 2 모재 금속을 향하는 면의 반대 면에 자석을 배치하는 단계(S 340); 및 모재 금속들의 융점 및 저융점 금속 분말의 융점 사이의 온도에서 열과 자기력을 이용하여 접합 공정을 수행하는 단계(S 350)를 포함한다.
상기 유기 용매는 플럭스(flux) 또는 분산제와 용매가 이용될 수 있고, 상기 제 1 모재 금속의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 전선을 배치하여 전류에 의해 만들어지는 자기력을 제공할 수 있다.
도 3b는 자석(40)이 위에 위치하고, 자석과 가까운 쪽에 반자성체(10), 먼 쪽에 상자성체(20)를 위치시킨다. 그리고 접합물질(30)이 페이스트 또는 박판 형태로 삽입되어 접합을 실시한다.
도 3c는 자석(40)이 아래에 위치하고, 자석과 가까운 쪽에 반자성체(10), 먼 쪽에 상자성체(20)를 위치시킨다. 그리고 접합물질(30)이 페이스트 또는 박판 형태로 삽입되어 접합을 실시한다.
반자성체는 자석과의 척력에 의해 접합부로의 확산이 빠르게 일어난다.
CASE 3) 자석/강자성체가 일면에 처리된 칩/페이스트/강자성체 모재로 배치된 경우
제 3 실시예에서는 강자성체인 제 1 모재 금속이 일면에 처리된 칩이 이용되고, 제 2 모재 금속으로는 강자성체가 이용되며, 칩의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 자석이 배치된다.
도 4a는 본 발명의 추가적인 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법의 순서도를 도시하고, 도 4b는 이의 구체적인 실시예의 모식도를 도시한다.
본 발명의 추가적인 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법은, 강자성체인 제 1 모재 금속이 일면에 처리된 칩(chip)을 준비하고, 강자성체인 제 2 모재 금속을 준비하는 단계(S 410); 모재 금속들보다 융점이 낮은 저융점 금속 분말 및 유기 용매를 혼합하여 페이스트를 제조하는 단계(S 420); 제 1 모재 금속이 일면에 처리된 칩; 페이스트; 및 제 2 모재 금속의 순서로 배치하는 단계(S 430)로서, 제 1 모재 금속이 제 2 모재 금속을 향하도록 배치하는, 단계; 칩의 외면으로서 제 2 모재 금속을 향하는 면의 반대 면에 자석을 배치하는 단계(S 440); 및 모재 금속들의 융점 및 저융점 금속 분말의 융점 사이의 온도에서 열과 자기력을 이용하여 접합 공정을 수행하는 단계(S 450)를 포함한다.
상기 유기 용매는 플럭스 또는 분산제와 용매가 이용될 수 있고, 상기 칩의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 전선을 배치하여 전류에 의해 만들어지는 자기력을 제공할 수 있다.
도 4b는 자석(40)이 위에 위치하고, 자석과 가까운 쪽에 강자성체가 일면에 표면 처리된 칩(10), 먼 쪽에 강자성체(20)를 위치시킨다. 그리고 접합물질(30)이 페이스트 또는 박판 형태로 삽입되어 접합을 실시한다.
칩 전체가 강자성체가 아니고 예를 들어 Si/Ti/Cu/Ni 표면 처리된 칩 경우, 표면처리의 두께가 얇아 칩 표면처리의 Ni이 전부 소진되면 칩의 표면처리 부분에서 delamination이 발생한다. 이를 방지하고자, 강자성체 표면처리된 칩 위에 자석을 위치시키면, 접합공정 시 접합부는 칩 표면의 Ni과는 적게 반응하고(자석과 칩의 표면처리된 Ni과의 인력), 기판의 Ni과는 인력이 작용하여, 기판 쪽의 Ni만 소모하면서 접합을 진행할 수 있다.
강자성체인 칩의 표면처리된 곳이 자석에 의해 거의 소진되지 않아 신뢰성이 확보되고, 아래쪽 강자성체만 소진 시켜 접합이 가능하며, Void를 감소시킬 수 있다.
CASE 4) 반자성체가 일면에 처리된 칩/페이스트/반자성체 모재/자석으로 배치된 경우
제 4 실시예에서는 반자성체인 제 1 모재 금속이 일면에 처리된 칩이 이용되고, 제 2 모재 금속으로는 반자성체가 이용되며, 제 2 모재 금속의 외면으로서 제 1 모재 금속을 향하는 면의 반대 면에 자석이 배치된다.
도 5a는 본 발명의 추가적인 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법의 순서도를 도시하고, 도 5b는 이의 구체적인 실시예의 모식도를 도시한다.
본 발명의 추가적인 실시예에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법은, 반자성체인 제 1 모재 금속이 일면에 처리된 칩(chip)을 준비하고, 반자성체인 제 2 모재 금속을 준비하는 단계(S 510); 모재 금속들보다 융점이 낮은 저융점 금속 분말 및 유기 용매를 혼합하여 페이스트를 제조하는 단계(S 520); 제 1 모재 금속이 일면에 처리된 칩; 페이스트; 및 제 2 모재 금속의 순서로 배치하는 단계(S 530); 제 2 모재 금속의 외면으로서 제 1 모재 금속을 향하는 면의 반대 면에 자석을 배치하는 단계(S 540); 및 모재 금속들의 융점 및 저융점 금속 분말의 융점 사이의 온도에서 열과 자기력을 이용하여 접합 공정을 수행하는 단계(S 550)를 포함한다.
상기 유기 용매는 플럭스 또는 분산제와 용매가 이용될 수 있고, 상기 제 2 모재 금속의 외면으로서 상기 제 1 모재 금속을 향하는 면의 반대 면에 전선을 배치하여 전류에 의해 만들어지는 자기력을 제공할 수 있다.
도 5b는 자석(40)이 아래에 위치하고, 자석과 가까운 쪽에 반자성체(20); 먼 쪽에 반자성체가 일면에 표면 처리된 칩(10)을 위치시킨다. 그리고 접합물질(30)이 페이스트 또는 박판 형태로 삽입되어 접합을 실시한다.
도 5b처럼 칩 전체가 반자성체가 아니고 예를 들어 Si/Ti/Cu 표면 처리된 칩 경우, 표면처리의 두께가 얇아 칩 표면처리의 Cu가 전부 소진되면 칩의 표면처리 부분에서 delamination이 발생한다. 이를 방지하고자, 반자성체 기판 아래에 자석을 위치시키면, 접합공정 시 접합부는 칩 표면의 Cu과는 적게 반응하고(자석과 칩의 표면처리된 Cu와의 척력), 기판의 Cu과는 척력이 작용하여, 기판 쪽의 Cu만 소모하면서 접합을 진행할 수 있다.
반자성체인 칩의 표면처리된 곳이 자석에 의해 거의 소진되지 않아 신뢰성이 확보되고, 아래쪽 반자성체만 소진 시켜 접합이 가능하며, Void를 감소시킬 수 있다.
이하에서는 구체적인 실시예와 함께 본 발명의 내용을 추가적으로 설명하도록 하겠다.
도 6은 본 발명의 자기력을 이용한 무가압 천이액상접합(TLP) 방법(Cu to Ni)의 모식도이다.
도 6에서와 같이, 기존의 방법인 열에 자석을 이용하여 자기력을 추가하여 접합공정을 실시하면 Ni과 자석에는 인력이 작용하고, Cu와 자석에는 척력이 발생하기 때문에 1) 확산속도가 기존의 접합공정보다 빠르기 때문에 전체적으로 금속간화합물로 변하는데 시간이 짧다. 또한, 접합부 중간 중간에 확산에 의해 발생되는 2) kirkendall voids, voids도 자기력을 통한 Ni, Cu의 확산을 통해 채워줄 수 있다. 마지막으로 3) 자기력을 통해 Ni은 위로 확산되고 Cu는 밑으로 확산되기 때문에 접합부에 금속간화합물의 층상구조가 형성되지 않고 (Cu,Ni)-Sn 금속간화합물이 고르게 형성된다. 따라서 더욱 높은 접합강도를 얻을 수 있다.
도 7은 본 발명의 자기력을 이용하여 무가압 천이액상접합 방법으로 접합한 SEM 사진이다. 실험조건은 Ni을 baseplate로 하고 Cu를 위쪽 chip부분으로 하고 위쪽에 고온에서도 버틸 수 있는 사마륨 코발트 자석을 위치시켰다. 이때 자석은 사마륨 코발트 이외에 고온에서 버틸 수 있는 자석이면 모두 다 가능하다. Sn paste는 Sn powder (90 wt%), flux (10 wt%)를 섞어서 만들었으며 이때 flux를 대체하여 첨가제(PVP 등의 분산제)와 용매(물, 알콜계, 에틸렌글리콜계 등)를 사용할 수 있다. Sn paste를 중간에 넣어 무가압 상태에서 300 도에서 1시간 동안 접합을 하였다. 기존의 방법에 비하여 kirkendall voids, 유기물이 기화됨에 따른 voids가 확연히 줄어 있는 것을 확인할 수 있다. 이는 자기력에 의해 Ni의 확산이 위쪽으로 Cu의 확산은 밑쪽으로 일어나서 전체적으로 voids가 적어진 것이다. 또한 접합부의 층상구조를 확인하기 위하여 EDS 분석을 하였고, 접합부 위쪽과 아래쪽 둘다 (Cu,Ni)-Sn IMC가 형성된 것을 확인하였다.
도 8은 본 발명의 접합부를 EDS 분석을 이용해 mapping을 한 사진이다. 접합부가 Sn(빨간색), Ni(파란색), Cu(초록색)으로 균일하게 이뤄져 있는 것을 확인할 수 있다. 이를 통해 접합부 내부의 층상구조가 없는 것을 확인할 수 있다.
도 9는 기존의 접합방법과 본 발명의 접합방법의 접합강도를 비교한 그래프이다. 실험조건은 둘 다 300도에서 무가압 조건으로 접합을 진행하였다. 기존의 접합방법에 비해 본 발명의 접합방법의 접합강도는 2배 이상의 높은 강도를 보였다.
본 발명을 활용하면, 파워모듈의 SiC 접합 및 기타 고 내열 전자장치, 우주항공 접합에 활용할 수 있다. 본 발명은 무가압 또는 낮은 압력 상태에서 자석을 이용하여 자기력을 발생시켜 확산속도를 빠르게 해서 접합 시간을 줄이고자 함이며, 이와 더불어 자기력을 통해 접합부의 kirkendall voids, voids를 감소시키고 접합부의 금속간화합물의 층상구조를 억제시켜 접합 강도를 증가시키고자 한다.
제시된 실시예들에 대한 설명은 임의의 본 발명의 기술 분야에서 통상의 지식을 가진 자가 본 발명을 이용하거나 또는 실시할 수 있도록 제공된다. 이러한 실시예들에 대한 다양한 변형들은 본 발명의 기술 분야에서 통상의 지식을 가진 자에게 명백할 것이며, 여기에 정의된 일반적인 원리들은 본 발명의 범위를 벗어남이 없이 다른 실시예들에 적용될 수 있다. 그리하여, 본 발명은 여기에 제시된 실시예들로 한정되는 것이 아니라, 여기에 제시된 원리들 및 신규한 특징들과 일관되는 최광의의 범위에서 해석되어야 할 것이다.

Claims (13)

  1. 반자성체 또는 상자성체인 제 1 모재 금속을 준비하고, 강자성체인 제 2 모재 금속을 준비하는 단계;
    상기 모재 금속들보다 융점이 낮은 저융점 금속 분말 및 유기 용매를 혼합하여 페이스트를 제조하는 단계;
    상기 제 1 모재 금속; 상기 페이스트; 및 상기 제 2 모재 금속의 순서로 배치하는 단계;
    상기 제 1 모재 금속의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 자석을 배치하는 단계; 및
    상기 모재 금속들의 융점 및 상기 저융점 금속 분말의 융점 사이의 온도에서 열과 자기력을 이용하여 접합 공정을 수행하는 단계를 포함하는,
    자기력을 이용한 금속 재료 간의 천이액상접합 방법.
  2. 제 1 항에 있어서,
    상기 유기 용매는 플럭스(flux) 또는 분산제와 용매가 이용되는,
    자기력을 이용한 이종 금속 재료 간의 천이액상접합 방법.
  3. 제 1 항에 있어서,
    상기 제 1 모재 금속의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 전선을 배치하여 전류에 의해 만들어지는 자기력을 제공하는,
    자기력을 이용한 금속 재료 간의 천이액상접합 방법.
  4. 반자성체인 제 1 모재 금속을 준비하고, 상자성체인 제 2 모재 금속을 준비하는 단계;
    상기 모재 금속들보다 융점이 낮은 저융점 금속 분말 및 유기 용매를 혼합하여 페이스트를 제조하는 단계;
    상기 제 1 모재 금속; 상기 페이스트; 및 상기 제 2 모재 금속의 순서로 배치하는 단계;
    상기 제 1 모재 금속의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 자석을 배치하는 단계; 및
    상기 모재 금속들의 융점 및 상기 저융점 금속 분말의 융점 사이의 온도에서 열과 자기력을 이용하여 접합 공정을 수행하는 단계를 포함하는,
    자기력을 이용한 금속 재료 간의 천이액상접합 방법.
  5. 제 4 항에 있어서,
    상기 유기 용매는 플럭스(flux) 또는 분산제와 용매가 이용되는,
    자기력을 이용한 금속 재료 간의 천이액상접합 방법.
  6. 제 4 항에 있어서,
    상기 제 1 모재 금속의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 전선을 배치하여 전류에 의해 만들어지는 자기력을 제공하는,
    자기력을 이용한 금속 재료 간의 천이액상접합 방법.
  7. 강자성체인 제 1 모재 금속이 일면에 처리된 칩(chip)을 준비하고, 강자성체인 제 2 모재 금속을 준비하는 단계;
    상기 모재 금속들보다 융점이 낮은 저융점 금속 분말 및 유기 용매를 혼합하여 페이스트를 제조하는 단계;
    상기 제 1 모재 금속이 일면에 처리된 칩; 상기 페이스트; 및 상기 제 2 모재 금속의 순서로 배치하는 단계로서, 상기 제 1 모재 금속이 상기 제 2 모재 금속을 향하도록 배치하는, 단계;
    상기 칩의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 자석을 배치하는 단계; 및
    상기 모재 금속들의 융점 및 상기 저융점 금속 분말의 융점 사이의 온도에서 열과 자기력을 이용하여 접합 공정을 수행하는 단계를 포함하는,
    자기력을 이용한 금속 재료 간의 천이액상접합 방법.
  8. 제 7 항에 있어서,
    상기 유기 용매는 플럭스 또는 분산제와 용매가 이용되는,
    자기력을 이용한 금속 재료 간의 천이액상접합 방법.
  9. 제 7 항에 있어서,
    상기 칩의 외면으로서 상기 제 2 모재 금속을 향하는 면의 반대 면에 전선을 배치하여 전류에 의해 만들어지는 자기력을 제공하는,
    자기력을 이용한 금속 재료 간의 천이액상접합 방법.
  10. 반자성체인 제 1 모재 금속이 일면에 처리된 칩(chip)을 준비하고, 반자성체인 제 2 모재 금속을 준비하는 단계;
    상기 모재 금속들보다 융점이 낮은 저융점 금속 분말 및 유기 용매를 혼합하여 페이스트를 제조하는 단계;
    상기 제 1 모재 금속이 일면에 처리된 칩; 상기 페이스트; 및 상기 제 2 모재 금속의 순서로 배치하는 단계로서, 상기 제 1 모재 금속이 상기 제 2 모재 금속을 향하도록 배치하는, 단계;
    상기 제 2 모재 금속의 외면으로서 상기 제 1 모재 금속을 향하는 면의 반대 면에 자석을 배치하는 단계; 및
    상기 모재 금속들의 융점 및 상기 저융점 금속 분말의 융점 사이의 온도에서 열과 자기력을 이용하여 접합 공정을 수행하는 단계를 포함하는,
    자기력을 이용한 금속 재료 간의 천이액상접합 방법.
  11. 제 10 항에 있어서,
    상기 유기 용매는 플럭스 또는 분산제와 용매가 이용되는,
    자기력을 이용한 금속 재료 간의 천이액상접합 방법.
  12. 제 10 항에 있어서,
    상기 제 2 모재 금속의 외면으로서 상기 제 1 모재 금속을 향하는 면의 반대 면에 전선을 배치하여 전류에 의해 만들어지는 자기력을 제공하는,
    자기력을 이용한 금속 재료 간의 천이액상접합 방법.
  13. 제 1 항 내지 제 12 항 중 어느 한 항에 따른 자기력을 이용한 금속 재료 간의 천이액상접합 방법에 의해 제작된, 금속 재료 간의 접합부.
KR1020190065101A 2019-06-03 2019-06-03 자기력을 이용한 금속 재료 간의 천이액상접합 방법 KR102131051B1 (ko)

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US16/869,806 US11094663B2 (en) 2019-06-03 2020-05-08 Method for transient liquid-phase bonding between metal materials using a magnetic force

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KR20090047500A (ko) * 2006-08-30 2009-05-12 템프로닉스, 인크. 균일한 갭을 갖는 가까이 이격된 전극들
KR101324075B1 (ko) * 2005-10-21 2013-10-31 매그니파이 리미티드 초전도 시스템
JP2018200908A (ja) * 2015-10-20 2018-12-20 三菱電機株式会社 電力半導体装置の製造方法および電力半導体装置

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KR101324075B1 (ko) * 2005-10-21 2013-10-31 매그니파이 리미티드 초전도 시스템
KR20090047500A (ko) * 2006-08-30 2009-05-12 템프로닉스, 인크. 균일한 갭을 갖는 가까이 이격된 전극들
JP2018200908A (ja) * 2015-10-20 2018-12-20 三菱電機株式会社 電力半導体装置の製造方法および電力半導体装置

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