WO2017054328A1 - 一种彩色滤光片基板及其制造方法、液晶显示面板 - Google Patents

一种彩色滤光片基板及其制造方法、液晶显示面板 Download PDF

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WO2017054328A1
WO2017054328A1 PCT/CN2015/097994 CN2015097994W WO2017054328A1 WO 2017054328 A1 WO2017054328 A1 WO 2017054328A1 CN 2015097994 W CN2015097994 W CN 2015097994W WO 2017054328 A1 WO2017054328 A1 WO 2017054328A1
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Prior art keywords
substrate
black matrix
metal mesh
layer
width
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PCT/CN2015/097994
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English (en)
French (fr)
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陈珍霞
马小龙
李泳锐
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深圳市华星光电技术有限公司
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Priority to US14/907,949 priority Critical patent/US20180031905A1/en
Publication of WO2017054328A1 publication Critical patent/WO2017054328A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/22—Antistatic materials or arrangements

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular to a color filter substrate, a method of manufacturing a color filter substrate, and a liquid crystal display panel.
  • FFS and IPS display technologies achieve high optical transmittance, high contrast, high brightness and low chromatic aberration while achieving a wide viewing angle.
  • FIG. 1 is a schematic structural view of a liquid crystal display panel of an IPS mode in the prior art.
  • the liquid crystal display panel has a color filter substrate 110 and an array substrate 120 disposed opposite to each other, and a liquid crystal layer 130 between the color filter substrate 110 and the array substrate 120.
  • a black matrix 113 and a color filter layer 115 are formed on the inner surface of the color filter substrate, and generally, a protective layer 117 is also formed on the black matrix and the color filter layer.
  • a common electrode 123 and a pixel electrode 125 are formed on the inner surface of the array substrate 120 such that liquid crystal molecules in the liquid crystal layer are deflected under the control of a horizontal electric field.
  • Static electricity accumulates on the color filter substrate during the manufacturing process of the liquid crystal display or during use.
  • the static electricity accumulates to a certain extent, an electrostatic field is formed, which interferes with liquid crystal molecules inside the liquid crystal layer, resulting in abnormal display.
  • a transparent conductive indium tin oxide (ITO) layer 119 is usually formed on the upper surface of the color filter substrate 110 by a vacuum sputtering process. Also, it is necessary to increase the thickness of the ITO layer. Degree to reduce its surface resistance for better electrical conductivity. However, an increase in the thickness of the ITO layer results in a significant decrease in its light transmittance. As shown in FIG.
  • the sheet resistance is 2000 ⁇
  • the transmittance of light having a wavelength of 400 nm is 98%
  • the sheet resistance is decreased to 500 ⁇
  • the transmittance of light having a wavelength of 400 nm is reduced to 80%, which causes the overall brightness of the liquid crystal display panel to be significantly lowered.
  • One of the objects of the present invention is to solve the technical drawback that the conventional color filter substrate causes an excessive decrease in transmittance when the resistance of the electrostatic conduction layer is reduced.
  • Embodiments of the present invention first provide a color filter substrate, including:
  • a black matrix layer including a bezel formed on the first surface of the base substrate
  • a metal mesh layer comprising grid lines formed on a second surface opposite the first surface of the substrate substrate
  • the grid lines of the metal mesh layer are arranged corresponding to the borders of the black matrix layer, and the projection area of the grid lines of the metal mesh layer on the substrate substrate is located on the projection area of the border of the black matrix layer on the substrate. internal.
  • the grid lines of the metal mesh layer are surrounded by a plurality of grid cells, and each grid cell is disposed in one-to-one correspondence with the rectangular cells of the black matrix layer.
  • the grid lines of the metal mesh layer enclose a plurality of grid cells, each grid cell being disposed to correspond to at least one rectangular unit of the black matrix layer.
  • the width of the grid lines of the metal mesh layer is less than the width of the border of the black matrix layer.
  • Embodiments of the present invention also provide a method of manufacturing a color filter substrate, including the following steps:
  • the projection area of the grid lines on the base substrate is located inside the projection area of the black matrix layer on the substrate substrate.
  • the step of forming grid lines of the metal mesh layer on the second surface opposite the first surface of the base substrate comprises:
  • the photoresist is exposed and developed by using a mask to form a notch region and a residual region;
  • a developing process is used to remove the residual film and the metal film deposited on the residual region, and the metal film deposited on the notched region is retained to obtain a metal mesh layer.
  • the metal mesh layer includes a plurality of grid cells, each grid cell being disposed in one-to-one correspondence with rectangular cells of the black matrix layer.
  • the width of the notch region is less than the width of the bezel of the black matrix layer.
  • An embodiment of the present invention further provides a liquid crystal display panel, including:
  • An array substrate disposed opposite to the color filter substrate
  • the metal mesh layer is connected to a ground end on the array substrate.
  • the color filter substrate provided by the embodiment of the invention uses a metal mesh as the electrostatic conductive layer, which can ensure high transmittance and low surface resistance at the same time. Further, the metal mesh has better flexibility and is more suitable for use on a curved substrate.
  • the indium element in the conventional ITO layer is a rare metal, which is in danger of shortage of raw materials.
  • the metal mesh provided in this embodiment can be fabricated by using common metal materials such as tungsten (W), titanium (Ti), molybdenum (Mo) or copper (Cu), and is more practical.
  • FIG. 1 is a schematic structural view of a liquid crystal display panel of an IPS mode in the prior art
  • FIG. 2 is a schematic diagram showing the relationship between film thickness, sheet resistance and transmittance of an ITO layer in the prior art
  • FIG. 3 is a cross-sectional view showing a color filter substrate according to Embodiment 1 of the present invention.
  • FIG. 4 is a schematic structural view of a black matrix and a metal grid according to Embodiment 1 of the present invention.
  • FIG. 5 is a schematic diagram showing another structure of a black matrix and a metal mesh according to Embodiment 1 of the present invention.
  • FIG. 6 is a schematic diagram showing another structure of a black matrix and a metal mesh according to Embodiment 1 of the present invention.
  • FIG. 7 is a flow chart showing the steps of a method for manufacturing a color filter substrate according to Embodiment 2 of the present invention.
  • FIG. 8a is a schematic structural view of a color filter substrate coated with a photoresist according to Embodiment 2 of the present invention.
  • FIG. 8b is a schematic structural view of a color filter substrate after exposure and development according to Embodiment 2 of the present invention.
  • FIG. 8c is a schematic structural view of a color filter substrate after depositing a metal film according to Embodiment 2 of the present invention.
  • FIG. 8d is a schematic structural view of a color filter substrate after re-development according to Embodiment 2 of the present invention.
  • FIG. 9 is a schematic structural diagram of a liquid crystal display panel according to Embodiment 3 of the present invention.
  • the color filter substrate 300 includes a base substrate 310, and a black matrix layer 320 and a metal mesh layer 330 respectively disposed on both sides of the base substrate 310.
  • the black matrix layer 320 includes a bezel 321 formed on the first surface of the base substrate 310.
  • the metal mesh layer 330 includes grid lines 331 formed on a second surface opposite the first surface of the substrate substrate.
  • the metal mesh layer 330 has a lower impedance than the conventional ITO layer, and the metal mesh layer 330 can conduct static electricity more quickly when static electricity is accumulated on the color filter substrate 300.
  • the black matrix layer includes a plurality of rectangular cells B11 to B23 which are alternately formed by the bezel 321 including a plurality of mesh cells M11 to M23 surrounded by the mesh lines 331.
  • the grid line 331 is an opaque metal line
  • the grid line 331 and the border 321 of the black matrix are overlapped as much as possible to ensure the light transmittance of the color filter substrate. That is, by appropriately setting the positions of the mesh units M11 to M23, the projection area of the grid lines of the metal mesh layer on the base substrate is located inside the projection area of the frame of the black matrix layer on the base substrate, In order to ensure that the grid lines 331 do not block the light-transmitting regions in the matrix units B11 to B23.
  • the mesh units M11 to M23 are preferably arranged to correspond one-to-one with the matrix units B11 to B23.
  • the width of the grid lines 331 is set to be smaller than the width of the bezel 321 of the black matrix.
  • the black matrix has a border width of more than 5 ⁇ m.
  • the width of the grid lines 331 in the present embodiment is preferably set to 150 nm to 5 ⁇ m.
  • each of the grid cells may be disposed to correspond to at least one rectangular unit of the black matrix layer.
  • the grid unit M11 is arranged correspondingly to the rectangle formed by the combination of the rectangular units B11 and B12; similarly, in FIG. 6, the grid unit M11 and the rectangular units B11, B12, B21 and B22 are combined to form a rectangle.
  • the metal mesh layer structure shown in FIG. 5 and FIG. 6 can omit part of the grid lines, making the metal grid difficult to manufacture, saving metal materials and reducing manufacturing costs.
  • the color filter substrate provided in this embodiment uses a metal mesh as an electrostatic conductive layer, which can ensure high transmittance and low surface resistance at the same time. Further, the metal mesh has better flexibility and is more suitable for use on a curved substrate.
  • the indium element in the conventional ITO layer is a rare metal, which is in danger of shortage of raw materials.
  • the metal mesh provided in this embodiment can be fabricated by using common metal materials such as tungsten (W), titanium (Ti), molybdenum (Mo) or copper (Cu), and is more practical.
  • the embodiment provides a method for manufacturing a color filter substrate, which is mainly used for forming a metal mesh layer on a substrate.
  • the detailed process of the manufacturing method will be described below with reference to Fig. 7 and Figs. 8a to 8d.
  • a substrate is provided (step S701), and the substrate is cleaned and post-baked.
  • a bezel 802 of a black matrix layer is then formed on the first surface of the base substrate 801 (step S702).
  • a photoresist 803 is coated on the second surface of the base substrate (step S703), and low-pressure drying is performed to sufficiently fix the photoresist.
  • the photoresist 803 is preferably a positive optical resist, for example, a PFA (Polymmer film on array) series of JSR (Japan Synthetic Rubber Co.).
  • the coating precision is 150 nm, and the thickness is in the range of 1.5 ⁇ m to 5 ⁇ m.
  • the photoresist 803 is exposed and developed using a mask to form a notch region 803a and a residual region 803b as shown in Fig. 8b (step S704).
  • the pattern of the mask corresponds to the matrix unit of the black matrix.
  • a metal film is vapor-deposited on the notch region 803a and the residual region 803b by a physical vapor deposition process (step S705), and the thickness of the metal film is about 10 nm to 100 nm. Since the step difference between the metal film and the residual region of the photoresist is large, the metal film 804a on the notch region obtained after the vapor deposition is completed is not continuous with the metal film 804b on the remaining region (as shown in FIG. 8c).
  • the “segment difference” is the difference in height between the top of the metal film 804a on the notch region and the top of the metal film 804b on the residual region.
  • the development process is used again to remove the residual region 803b and the metal film 804b evaporated on the residual region.
  • the metal film 804a (shown in FIG. 8d) deposited on the notch region is left to obtain a grid line of the metal mesh layer (step S706).
  • the material of the metal film may be a metal material such as tungsten (W), titanium (Ti), molybdenum (Mo) or copper (Cu).
  • steps S703 to S706 are grid lines for forming a metal mesh layer on the second surface of the base substrate.
  • the pattern of the mask corresponds to the matrix unit of the black matrix
  • the notch region 803a formed by the mask corresponds to the bezel 321 of the black matrix, so that the notch region 803a is on the substrate.
  • the projection area is located inside the projection area of the black matrix layer on the substrate substrate.
  • a plurality of grid cells are formed in the metal mesh layer obtained in step S706, and each grid cell is set to correspond one-to-one with the rectangular cells of the black matrix layer (as shown in FIG. 4), or is set to be black matrix.
  • At least one rectangular unit of the layer corresponds (as shown in FIG. 5 or FIG. 6), so that the metal mesh layer can have both higher transmittance and lower sheet resistance.
  • the width of the notch region 803a is smaller than the width of the bezel of the black matrix layer.
  • the width of the notch region 803a is set to be 150 nm to 5 ⁇ m.
  • the process of the preparation process of the present embodiment is simple, and it is not necessary to use the expensive high-temperature sputtering equipment which must be used in the prior art for depositing the ITO layer, and thus has good practicability.
  • the liquid crystal display panel is in an FFS or IPS display mode.
  • the liquid crystal display panel includes a color filter substrate 910 and an array substrate 920 disposed opposite to each other, and a liquid crystal layer 930 is filled between the color filter substrate 910 and the array substrate 920.
  • the color filter substrate 910 is prepared by using the process flow as described above.
  • a black matrix layer 913 and a color filter layer 915 are formed on the inner surface of the color filter substrate 910, and a metal mesh layer 904 is formed on the outer surface of the color filter substrate 910.
  • the grid lines in the metal mesh layer 904 are arranged corresponding to the borders of the black matrix. The specific arrangement is as described in the first embodiment, and details are not described herein again.
  • the “inner surface” of the color filter substrate 910 refers to the surface opposite to the array substrate 920, and the “outer surface” of the color filter substrate 910 refers to the surface away from the array substrate 920.
  • a common electrode 923 and a pixel electrode 925 are formed on the inner surface of the array substrate 920 such that liquid crystal molecules in the liquid crystal layer are deflected under the control of a horizontal electric field.
  • the "inner surface” of the array substrate 920 refers to the surface opposite to the color filter substrate 910.
  • the array substrate 920 is also provided with a grounding end 921, and the metal mesh layer 904 is connected to the grounding end 921 through a connecting member 940.
  • the metal mesh layer 904 can quickly release the static charge through the grounding end 921, thereby ensuring that the liquid crystal molecules in the liquid crystal layer are not disturbed by the electrostatic field.
  • the metal mesh layer 904 has a high transmittance, the display brightness of the liquid crystal display panel of the embodiment Higher, with a better display.

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  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

一种彩色滤光片基板（300）、彩色滤光片基板（300）的制造方法和液晶显示面板。所述彩色滤光片基板（300）包括衬底基板（310）、黑矩阵层（320）和金属网格层（330），其中，金属网格层（330）的网格线（331）与黑矩阵层（320）的边框（321）对应设置，且金属网格层（330）的网格线（331）在衬底基板（310）上的投影区域位于黑矩阵层（320）的边框（321）在衬底基板（310）上的投影区域的内部。

Description

一种彩色滤光片基板及其制造方法、液晶显示面板
相关申请的交叉引用
本申请要求享有2015年9月28日提交的名称为“一种彩色滤光片基板及其制造方法、液晶显示面板”的中国专利申请CN201510625950.8的优先权，其全部内容通过引用并入本文中。
技术领域
本发明涉及液晶显示器技术领域，具体地说，涉及一种彩色滤光片基板、彩色滤光片基板的制造方法和液晶显示面板。
背景技术
近年来，随着液晶显示技术的不断发展，已出现多种提供大视角显示效果的显示技术，例如共面转换(In-Plate Swiching，IPS)技术和边缘电场开关(Fringe Field Switching，FFS)技术。FFS和IPS显示技术在实现宽视角的前提下，同时实现了高透光率、高对比度、高亮度和低色差等优良特性。
FFS和IPS同属于水平电场控制模式。图1为现有技术中IPS模式的液晶显示面板的结构示意图。液晶显示面板具有彼此相对设置的彩色滤光片基板110和阵列基板120，以及位于彩色滤光片基板110和阵列基板120之间的液晶层130。在彩色滤光基板的内表面形成有黑矩阵113和彩色滤光层115，通常，还在黑矩阵和彩色滤光层上形成保护层117。在阵列基板120的内表面上形成有公共电极123和像素电极125，使得液晶层中的液晶分子在水平电场的控制下发生偏转。
液晶显示器制造过程中或者在使用过程中会产生静电积聚在彩色滤光片基板上。当静电积累到一定程度后会形成静电场，对液晶层内部的液晶分子产生干扰，导致显示画面异常。
为了防止静电对液晶层的影响，通常利用真空溅射工艺在彩色滤光基板110的上表面形成透明导电的氧化铟锡(Indium tin oxide，ITO)层119。并且，需要增大ITO层的厚 度来降低其面电阻，以获得较好的导电效果。然而，ITO层厚度增大导致其透光率明显降低。如图2所示，当ITO层的厚度为200埃时，其面电阻为2000Ω，波长为400nm光的穿透率为98％；当ITO层的厚度增加为400埃时，其面电阻降低为500Ω，但是波长为400nm光的穿透率降低至80％，这使得液晶显示面板整体的亮度显著降低。
因此，亟需一种彩色滤光片基板，其表面形成的静电传导层同时具有较低面电阻和较高穿透率。
发明内容
本发明的目的之一在于解决现有的彩色滤光片基板在静电传导层面电阻减小时，导致穿透率过度降低的技术缺陷。
本发明的实施例首先提供一种彩色滤光片基板，包括：
衬底基板；
黑矩阵层，其包括形成在衬底基板的第一表面上的边框；
金属网格层，其包括形成在与衬底基板的第一表面相对的第二表面上的网格线；
其中，金属网格层的网格线与黑矩阵层的边框对应设置，且金属网格层的网格线在衬底基板上的投影区域位于黑矩阵层的边框在衬底基板上的投影区域的内部。
在一个实施例中，所述金属网格层的网格线围成多个网格单元，每一网格单元设置为与黑矩阵层的矩形单元一一对应。
在一个实施例中，所述金属网格层的网格线围成多个网格单元，每一网格单元设置为与黑矩阵层的至少一个矩形单元对应。
在一个实施例中，所述金属网格层的网格线的宽度小于黑矩阵层的边框的宽度。
本发明的实施例还提供一种彩色滤光片基板的制造方法，包括以下步骤：
提供一衬底基板；
在衬底基板的第一表面上形成黑矩阵层的边框；
在与衬底基板的第一表面相对的第二表面上形成金属网格层的网格线，并使金属网格层的网格线与黑矩阵层的边框对应设置，且金属网格层的网格线在衬底基板上的投影区域位于黑矩阵层的边框在衬底基板上的投影区域的内部。
在一个实施例中，在与衬底基板的第一表面相对的第二表面上形成金属网格层的网格线的步骤包括：
在衬底基板的第二表面上涂布光刻胶；
利用掩模板对光刻胶进行曝光并显影，形成缺口区域和残留区域；
在缺口区域和残留区域上沉积金属膜；
采用显影工艺去掉残留区域以及残留区域上沉积的金属膜，保留由缺口区域上沉积的金属膜，获得金属网格层。
在一个实施例中，所述金属网格层包括多个网格单元，每一网格单元设置为与黑矩阵层的矩形单元一一对应。
在一个实施例中，所述缺口区域的宽度小于黑矩阵层的边框的宽度。
本发明的实施例还提供一种液晶显示面板，包括：
如上文所述的彩色滤光片基板；
阵列基板，与彩色滤光片基板相对设置；
其中，所述金属网格层与阵列基板上的接地端连接。
本发明实施例提供的彩色滤光片基板采用金属网格作为静电传导层，能够同时保证较高的穿透率和较低的面电阻。进一步的，金属网格的可挠性较好，更适于用在曲面衬底上。另外，传统ITO层中的铟元素为稀有金属，面临原料短缺的危险。本实施例中提供的金属网格能够利用钨(W)、钛(Ti)、钼(Mo)或者铜(Cu)等常见金属原料制造，更具有实用性。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例共同用于解释本发明，并不构成对本发明的限制。在附图中：
图1为现有技术中IPS模式的液晶显示面板的结构示意图；
图2为现有技术中ITO层的膜厚、面电阻与穿透率的相关关系示意图；
图3为本发明实施例一的彩色滤光片基板的剖面示意图；
图4为本发明实施例一的黑矩阵和金属网格结构示意图；
图5为本发明实施例一的黑矩阵和金属网格的另一种结构的示意图；
图6为本发明实施例一的黑矩阵和金属网格的另一种结构的示意图；
图7为本发明实施例二的彩色滤光片基板的制造方法的步骤流程图；
图8a为本发明实施例二的涂布光刻胶后的彩色滤光片基板的结构示意图；
图8b为本发明实施例二的曝光显影后的彩色滤光片基板的结构示意图；
图8c为本发明实施例二的沉积金属膜后的彩色滤光片基板的结构示意图；
图8d为本发明实施例二的再次显影后的彩色滤光片基板的结构示意图；
图9为本发明实施例三的液晶显示面板的结构示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，以下结合附图对本发明作进一步地详细说明。
以下结合说明书附图对本发明的实施例进行说明，应当理解，此处所描述的优选实施例仅用于说明和解释本发明，并不用于限定本发明。并且在不相冲突的情况下，本发明的实施例中的特征可以相互结合。
实施例一
本实施例提供一种彩色滤光片基板。如图3所示，彩色滤光片基板300包括衬底基板310，以及分别设置在衬底基板310两侧的黑矩阵层320和金属网格层330。具体而言，黑矩阵层320包括形成在衬底基板310的第一表面上的边框321。而金属网格层330包括形成在与衬底基板的第一表面相对的第二表面上的网格线331。相对于传统的ITO层而言，金属网格层330的阻抗更低，当彩色滤光片基板300上积聚静电时，金属网格层330能够更迅速地传导静电。
图4为彩色滤光片基板上的金属网格和黑矩阵的结构示意图。在图4的示例中，黑矩阵层包括由边框321交错形成的多个矩形单元B11至B23，金属网格层包括由网格线331围成的多个网格单元M11至M23。
由于网格线331为不透明的金属线，将网格线331与黑矩阵的边框321尽量重合设置以保证彩色滤光片基板的透光率。也就是说，通过合理设置网格单元M11至M23的位置，使金属网格层的网格线在衬底基板上的投影区域位于黑矩阵层的边框在衬底基板上的投影区域的内部，以保证网格线331不会遮挡矩阵单元B11至B23中的透光区域。在图4的示例中，网格单元M11至M23优选设置为与矩阵单元B11至B23一一对应。
然而，液晶显示器的背光模组发出的光线经过重合设置金属网格和黑矩阵后，会产生波纹状的摩尔条纹(moire fringe)，导致显示画面质量降低。为了消除摩尔条纹，网格线331的宽度设定为小于黑矩阵的边框321的宽度。通常，黑矩阵的边框宽度为大于5μm， 本实施例中网格线331的宽度优选设定为150nm-5μm。
不限于此，每一网格单元还可设置为与黑矩阵层的至少一个矩形单元对应。在图5的示例中，网格单元M11与矩形单元B11和B12组合构成的矩形对应设置；类似的，在图6中，网格单元M11与矩形单元B11、B12、B21和B22组合构成的矩形对应设置。图5和图6所示的金属网格层结构能够省略部分网格线，使金属网格的制造难度下降，并能节省金属原料，降低制造成本。
应当了解，上述的网格单元的形状仅为示例，并非用以限制本发明。本领域技术人员可根据实际需要，选择设计网格单元的形状。
综上所述，本实施例提供的彩色滤光片基板采用金属网格作为静电传导层，能够同时保证较高的穿透率和较低的面电阻。进一步的，金属网格的可挠性较好，更适于用在曲面衬底上。另外，传统ITO层中的铟元素为稀有金属，面临原料短缺的危险。本实施例中提供的金属网格能够利用钨(W)、钛(Ti)、钼(Mo)或者铜(Cu)等常见金属原料制造，更具有实用性。
实施例二
本实施例提供一种彩色滤光片基板的制造方法，主要用于在衬底基板上形成金属网格层。以下结合图7、图8a至图8d对该制造方法的详细过程进行说明。
提供一衬底基板(步骤S701)，对衬底基板进行清洗和洗后烘烤。然后在衬底基板801的第一表面上形成黑矩阵层的边框802(步骤S702)。如图8a所示，在衬底基板的第二表面上涂布光刻胶803(步骤S703)，并进行低压干燥以使光刻胶充分固定。其中，光刻胶803优选采用正光阻(Positive optical resist)，例如日本合成橡胶有限公司JSR(Japan Synthetic Rubber Co)的PFA(Polymmer film on array)系列。涂布精度达到150nm即可，厚度在1.5μm至5μm范围内。
随后，利用掩模板对光刻胶803进行曝光并显影，形成如图8b所示的缺口区域803a和残留区域803b(步骤S704)。其中，掩模板的图案与黑矩阵的矩阵单元相对应。
接下来，采用物理气相沉积工艺在缺口区域803a和残留区域803b上蒸镀金属膜(步骤S705)，金属膜的厚度大约为10nm至100nm。由于金属膜与光刻胶残留区域的段差较大，蒸镀完成后得到的缺口区域上的金属膜804a与残留区域上的金属膜804b并不连续(如图8c所示)。其中，“段差”为缺口区域上的金属膜804a的顶部与残留区域上的金属膜804b顶部之间的高度差。
最后，再次采用显影工艺去掉残留区域803b以及残留区域上蒸镀的金属膜804b，保 留由缺口区域上沉积的金属膜804a(如图8d所示)，获得金属网格层的网格线(步骤S706)。其中，金属膜的材质可以为钨(W)、钛(Ti)、钼(Mo)或者铜(Cu)等金属原料。
上述步骤S703至S706是用于在衬底基板的第二表面上形成金属网格层的网格线。需要说明的是，在步骤S704中掩模板的图案与黑矩阵的矩阵单元相对应是指，利用掩模板形成的缺口区域803a与黑矩阵的边框321相对应，使缺口区域803a在衬底基板上的投影区域位于黑矩阵层的边框在衬底基板上的投影区域的内部。进而在步骤S706中获得的金属网格层中构成多个网格单元，每一网格单元设置为与黑矩阵层的矩形单元一一对应(如图4所示)，或者设置为与黑矩阵层的至少一个矩形单元对应(如图5或者图6所示)，使金属网格层能够同时具有较高的穿透率和较低的面电阻。其中，缺口区域803a的宽度小于黑矩阵层的边框的宽度。优选地，缺口区域803a的宽度设定为150nm-5μm。
由此可见，本实施例的制备过程的工艺简单，而不必采用现有技术中沉积ITO层所必须使用的昂贵的高温溅射设备，因此具有较好的实用性。
实施例三
本实施例提供一种液晶显示面板。优选的，该液晶显示面板为FFS或者IPS显示模式。如图9所示，该液晶显示面板包括相对设置的彩色滤光片基板910和阵列基板920，在彩色滤光片基板910和阵列基板920之间填充有液晶层930。其中，彩色滤光片基板910采用如上文所述的工艺流程制备而得到。
具体而言，彩色滤光片基板910的内表面形成有黑矩阵层913和彩色滤光层915，彩色滤光片基板910的外表面形成有金属网格层904。金属网格层904中的网格线与黑矩阵的边框对应设置，具体设置方式如实施例一所述，此处不再赘述。其中，彩色滤光片基板910的“内表面”是指与阵列基板920相对的表面，彩色滤光片基板910的“外表面”是指远离阵列基板920的表面。
阵列基板920的内表面上形成有公共电极923和像素电极925，使得液晶层中的液晶分子在水平电场的控制下发生偏转。阵列基板920的“内表面”是指与彩色滤光片基板910相对的表面。
阵列基板920还设置有接地端921，金属网格层904通过连接部件940与接地端921连接。当彩色滤光片基板910上积聚静电时，金属网格层904能通过接地端921迅速将静电荷释放，从而保证液晶层中的液晶分子不会受到静电场的干扰。
此外，由于金属网格层904具有较高的穿透率，本实施例的液晶显示面板的显示亮度 更高，具有更好的显示效果。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (19)

  1. 一种彩色滤光片基板，包括：
    衬底基板；
    黑矩阵层，其包括形成在衬底基板的第一表面上的边框；
    金属网格层，其包括形成在与衬底基板的第一表面相对的第二表面上的网格线；
    其中，金属网格层的网格线与黑矩阵层的边框对应设置，且金属网格层的网格线在衬底基板上的投影区域位于黑矩阵层的边框在衬底基板上的投影区域的内部。
  2. 如权利要求1所述的基板，其中，所述金属网格层的网格线的宽度小于黑矩阵层的边框的宽度。
  3. 如权利要求1所述的基板，其中，所述金属网格层的网格线围成多个网格单元，每一网格单元设置为与黑矩阵层的矩形单元一一对应。
  4. 如权利要求3所述的基板，其中，所述金属网格层的网格线的宽度小于黑矩阵层的边框的宽度。
  5. 如权利要求1所述的基板，其中，所述金属网格层的网格线围成多个网格单元，每一网格单元设置为与黑矩阵层的至少一个矩形单元对应。
  6. 如权利要求5所述的基板，其中，所述金属网格层的网格线的宽度小于黑矩阵层的边框的宽度。
  7. 一种彩色滤光片基板的制造方法，包括以下步骤：
    提供一衬底基板；
    在衬底基板的第一表面上形成黑矩阵层的边框；
    在与衬底基板的第一表面相对的第二表面上形成金属网格层的网格线，并使金属网格层的网格线与黑矩阵层的边框对应设置，且金属网格层的网格线在衬底基板上的投影区域位于黑矩阵层的边框在衬底基板上的投影区域的内部。
  8. 如权利要求7所述的方法，其中，在与衬底基板的第一表面相对的第二表面上形成金属网格层的网格线的步骤包括：
    在衬底基板的第二表面上涂布光刻胶；
    利用掩模板对光刻胶进行曝光并显影，形成缺口区域和残留区域；
    在缺口区域和残留区域上沉积金属膜；
    采用显影工艺去掉残留区域以及残留区域上沉积的金属膜，保留由缺口区域上沉积的金属膜，获得金属网格层。
  9. 如权利要求8所述的方法，其中，所述缺口区域的宽度小于黑矩阵层的边框的宽度。
  10. 如权利要求8所述的方法，其中，所述金属网格层包括多个网格单元，每一网格单元设置为与黑矩阵层的矩形单元一一对应。
  11. 如权利要求10所述的方法，其中，所述缺口区域的宽度小于黑矩阵层的边框的宽度。
  12. 如权利要求8所述的方法，其中，所述金属网格层包括多个网格单元，每一网格单元设置为与黑矩阵层的至少一个矩形单元对应。
  13. 如权利要求12所述的方法，其中，所述缺口区域的宽度小于黑矩阵层的边框的宽度。
  14. 一种液晶显示面板，包括：
    彩色滤光片基板，其包括：
    衬底基板；
    黑矩阵层，其包括形成在衬底基板的第一表面上的边框；
    金属网格层，其包括形成在与衬底基板的第一表面相对的第二表面上的网格线；
    其中，金属网格层的网格线与黑矩阵层的边框对应设置，且金属网格层的网格线在衬底基板上的投影区域位于黑矩阵层的边框在衬底基板上的投影区域的内部；
    阵列基板，与彩色滤光片基板相对设置；
    其中，所述金属网格层与阵列基板上的接地端连接。
  15. 如权利要求14所述的液晶显示面板，其中，所述金属网格层的网格线的宽度小于黑矩阵层的边框的宽度。
  16. 如权利要求14所述的液晶显示面板，其中，所述金属网格层的网格线围成多个 网格单元，每一网格单元设置为与黑矩阵层的矩形单元一一对应。
  17. 如权利要求16所述的液晶显示面板，其中，所述金属网格层的网格线的宽度小于黑矩阵层的边框的宽度。
  18. 如权利要求14所述的液晶显示面板，其中，所述金属网格层的网格线围成多个网格单元，每一网格单元设置为与黑矩阵层的至少一个矩形单元对应。
  19. 如权利要求18所述的液晶显示面板，其中，所述金属网格层的网格线的宽度小于黑矩阵层的边框的宽度。
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CN105093668B (zh) * 2015-09-28 2018-05-29 深圳市华星光电技术有限公司 一种彩色滤光片基板及其制造方法、液晶显示面板
CN105954922A (zh) * 2016-07-13 2016-09-21 武汉华星光电技术有限公司 一种彩膜基板及液晶面板
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