TWI648879B - 發光元件 - Google Patents

發光元件 Download PDF

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TWI648879B
TWI648879B TW107112374A TW107112374A TWI648879B TW I648879 B TWI648879 B TW I648879B TW 107112374 A TW107112374 A TW 107112374A TW 107112374 A TW107112374 A TW 107112374A TW I648879 B TWI648879 B TW I648879B
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Taiwan
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light
opening
transparent electrode
layer
shielding layer
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TW107112374A
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TW201944619A (zh
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江啟聖
詹鈞翔
李欣浤
范鐸正
蔡庭瑋
蔡旻錦
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友達光電股份有限公司
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Priority to TW107112374A priority Critical patent/TWI648879B/zh
Priority to CN201810645534.8A priority patent/CN108807483B/zh
Priority to US16/049,813 priority patent/US10629667B2/en
Application granted granted Critical
Publication of TWI648879B publication Critical patent/TWI648879B/zh
Publication of TW201944619A publication Critical patent/TW201944619A/zh

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Abstract

一種發光元件，包括基板、主動元件、第一遮光層、透明電極、第二遮光層、光轉換層、電致發光結構以及頂電極。主動元件位於基板上。第一遮光層位於主動元件上，且具有第一開口。透明電極位於第一遮光層上，且電性連接主動元件。第二遮光層位於透明電極上，且具有對應第一開口的第二開口。光轉換層實質上位於第一開口中。電致發光結構實質上位於第二開口中。透明電極位於第一開口與第二開口之間。電致發光結構位於頂電極以及透明電極之間。

Description

發光元件
本發明是有關於一種發光元件，且特別是有關於一種具有遮光層之發光元件。
在現有技術中，發光元件(例如顯示面板)通常包括具有發光結構(例如發光二極體)的陣列基板以及相對於陣列基板的彩色濾光基板。由於顯示面板中之發光結構發出的光線為球面光，因此相鄰之發光結構容易互相干擾，並導致漏光與混光的問題。為了減少漏光與混光的問題，通常會增加設置於彩色濾光基板上之黑色矩陣(Black matrix,BM)的厚度，藉此減少發光結構之間的互相干擾。然而，此舉會導致顯示面板的整體厚度上升增加，且改善混光的效果有限。因此，目前亟需一種能改善前述問題的方法。
本發明提供一種發光元件，可以改善漏光與混光的問題。
本發明之至少一實施例提供一種發光元件，包括基板、主動元件、第一遮光層、透明電極、第二遮光層、光轉換層、電致發 光結構以及頂電極。主動元件位於基板上。第一遮光層位於主動元件上，且具有第一開口。透明電極位於第一遮光層上，且電性連接主動元件。第二遮光層位於透明電極上，且具有對應第一開口的第二開口。光轉換層實質上位於第一開口中。電致發光結構實質上位於第二開口中。透明電極位於第一開口與第二開口之間。電致發光結構位於頂電極以及透明電極之間。
本發明之至少一實施例提供一種發光元件，包括基板、主動元件、第一遮光層、透明電極、第二遮光層、光轉換層、電致發光結構以及頂電極。主動元件位於基板上。第一遮光層位於主動元件上，且具有一第一開口。第一開口之深度約為4微米至10微米。透明電極位於第一遮光層上，且電性連接主動元件。第二遮光層位於透明電極上，且具有對應第一開口的第二開口。第二開口之深度約為0.5微米至2微米。第一開口朝向透明電極處的寬度W11與第二開口朝向透明電極處的寬度W21之關係為80%≦W21/W11≦130%。光轉換層實質上位於第一開口中。電致發光結構實質上位於第二開口中。透明電極位於第一開口與第二開口之間並接觸於光轉換層以及電致發光結構。電致發光結構位於頂電極以及透明電極之間。
本發明之目的之一為，改善發光元件漏光的問題。
本發明之目的之一為，改善發光元件混光的問題。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
10、20‧‧‧發光元件
AA’‧‧‧線
B1‧‧‧第一遮光層
B1A‧‧‧第一部分
B1B‧‧‧第二部分
B2‧‧‧第二遮光層
B3‧‧‧第三遮光層
C‧‧‧光轉換層
CH1、CH2‧‧‧通道層
CL‧‧‧訊號線
D1、D2‧‧‧汲極
DL‧‧‧資料線
E1‧‧‧透明電極
E2‧‧‧頂電極
G1、G2‧‧‧閘極
H1、H2‧‧‧接觸窗
I1、I2、I3、I4、I5‧‧‧絕緣層
I3A‧‧‧厚部
I3B‧‧‧薄部
L‧‧‧電致發光結構
O1‧‧‧第一開口
O2‧‧‧第二開口
Q‧‧‧發光層
S1、S2‧‧‧源極
SB‧‧‧基板
SL‧‧‧掃描線
T1、T2‧‧‧主動元件
TL1、TL2‧‧‧傳輸層
Vs1、Vs2、Vd1、Vd2‧‧‧通孔
d1、d2‧‧‧厚度
圖1A是依照本發明的一實施例的一種發光元件的上視示意圖。
圖1B是沿著圖1A中剖面線AA’的剖面示意圖。
圖2是依照本發明的一實施例的一種發光元件的剖面示意圖。
圖1A是依照本發明的一實施例的一種發光元件的上視示意圖，其中為了方便說明，圖1A省略繪示了發光元件中的部分構件。圖1B是沿著圖1A中剖面線AA’的剖面示意圖。
請參考圖1A與圖1B，發光元件10包括基板SB、主動元件T1、第一遮光層B1、透明電極E1、第二遮光層B2、光轉換層C、電致發光結構L以及頂電極E2。在一些實施例中，發光元件10還包括主動元件T2、掃描線SL、資料線DL、訊號線CL、絕緣層I1、絕緣層I2、絕緣層I3、絕緣層I4以及絕緣層I5。
掃描線SL相交於資料線DL以及訊號線CL。在本實施例中，是以掃描線SL的延伸方向與資料線DL的延伸方向不平行為例。掃描線SL與資料線DL一般是使用金屬材料，然而本發明不限於此。在其他實施例中，掃描線SL與資料線DL也可以使用其他導電材料(例如：金屬材料的氮化物、金屬材料的氧化物、金 屬材料的氮氧化物或其它合適的材料)或是金屬材料與其它材料的堆疊層。在本實施例中，資料線DL與訊號線CL可由同一圖案化製程所形成，但本發明不以此為限。
主動元件T1與主動元件T2位於基板SB上。在一些實施例中，主動元件T1與基板SB之間以及主動元件T2與基板SB之間還具有絕緣層I1與絕緣層I2，但本發明不以此為限。
主動元件T1具有源極S1、汲極D1、閘極G1以及通道層CH1。通道層CH1位於基板SB上。閘極G1重疊於通道層CH1，絕緣層I3例如為閘極絕緣層，且位於閘極G1與通道層CH1之間。
絕緣層I4覆蓋閘極G1以及絕緣層I3，絕緣層I4例如為層間絕緣層，且位於源極S1與閘極G1之間以及汲極D1與閘極G1之間。汲極D1與源極S1位於絕緣層I4上。通孔Vd1位於絕緣層I3與絕緣層I4中，通孔Vs1位於絕緣層I3與絕緣層I4中。汲極D1透過通孔Vd1電性連接至通道層CH1，而源極S1透過通孔Vs1電性連接至通道層CH1。汲極D1電性連接至電致發光結構L。在本實施例中，主動元件T1的閘極G1電性連接至主動元件T2，且主動元件T1的源極S1電性連接至訊號線CL，但本發明不以此為限。在其他實施例中，主動元件T1的閘極G1電性連接至掃描線SL，且主動元件T1的源極S1電性連接至資料線DL。在本實施例中，主動元件T1是以頂部閘極型薄膜電晶體為例來說明，但本發明不限於此。在其他實施例中，上述之主動元件T1也可是以底部閘極型薄膜電晶體。
主動元件T2具有源極S2、汲極D2、閘極G2以及通道層CH2。通道層CH2位於基板SB上。閘極G2重疊於通道層CH2，且與通道層CH2之間夾有絕緣層(例如絕緣層I3)，絕緣層I3例如位於閘極G2與通道層CH2之間。
絕緣層(例如絕緣層I4)覆蓋閘極G2以及絕緣層I3，絕緣層I4例如位於源極S2與閘極G2之間以及汲極D2與閘極G2之間。汲極D2與源極S2位於絕緣層I4上，通孔Vd2位於絕緣層I3與絕緣層I4中，通孔Vs2位於絕緣層I3與絕緣層I4中。汲極D2透過通孔Vd2電性電接至通道層CH2，而源極S2透過通孔Vs2電性電接至通道層CH2。在本實施例中，主動元件T2是以頂部閘極型薄膜電晶體為例來說明，但本發明不限於此。根據其他實施例，上述之主動元件T2也可是以底部閘極型薄膜電晶體。
在本實施例中，主動元件T2之汲極D2電性連接至主動元件T1之閘極G1。舉例來說，主動元件T2之汲極D2透過接觸窗H1電性連接至主動元件T1之閘極G1，接觸窗H1位於絕緣層I4中。閘極G2電性連接至掃描線SL，源極S2電性連接至資料線DL。在本實施例中，發光元件10是以包含兩個主動元件為例，但本發明不以此為限。在其他實施例中，發光元件可以包含一個或三個以上的主動元件。
第一遮光層B1位於主動元件T1上，且具有第一開口O1。第一開口O1可貫穿第一遮光層B1。第一開口O1之深度d1約為4微米至10微米。在一些實施例中，第一開口O1之深度d1可小 於第一遮光層B1的厚度。在一些實施例中，第一遮光層B1的材料包括光阻，可以藉由黃光製程形成第一開口O1，但本發明不以此為限。在其他實施例中，第一遮光層B1還可以是其他遮光材料。
在本實施例中，第一遮光層B1包括第一部分B1A以及第二部分B1B。第一部分B1A實質上覆蓋主動元件T1。第二部分B1B連接第一部分B1A。第二部分B1B貫穿絕緣層I4(例如為層間絕緣層)，且第一開口O1貫穿第二部分B1B。藉由使第二部分B1B貫穿絕緣層I4，第一開口O1的深度d1可以較深。在一些實施例中，絕緣層I3(例如為閘極絕緣層)包括厚部I3A與薄部I3B。厚部I3A重疊於閘極G1。薄部I3B重疊於第一開口O1以及第二開口O2。薄部I3B的厚度約為厚部I3A的0%至50%。藉此能進一步增加第一開口O1的深度d1，當薄部I3B的厚度為厚部I3A的厚度的0%時，表示並無設置薄部I3B。
在一些實施例中，第二部分B1B還可以貫穿絕緣層I3、絕緣層I2及絕緣層I1中的至少一層，但本發明不以此為限。
光轉換層C實質上位於第一開口O1中。在較佳的實施例中，光轉換層C係完全位於第一開口O1內。光轉換層C的材料例如包括量子點材料，量子點材料較佳包括鈣鈦礦材料、硒化鎘、磷化銦等等，光轉換層C可用以轉換光的波長。在其他實施例中，光轉換層C的材料例如包括濾光材料，例如為螢光材料等等。
透明電極E1位於第一遮光層B1上，且透過第一遮光層 B1中的接觸窗H2電性連接主動元件T1的汲極D1。透明電極E1的材料例如包括金屬氧化物，例如是氧化銦錫或者是氧化銦鋅。在一些實施例中，透明電極E1的材料包含氧化銦錫且厚度為50奈米至139奈米。
第二遮光層B2位於透明電極E1上，且具有對應第一開口O1的第二開口O2，第一開口O1重疊於第二開口O2。在一些實施例中，第二遮光層B2的材料包括光阻，可以藉由黃光製程形成第二開口O2，但本發明不以此為限。在其他實施例中，第二遮光層B2還可以是其他遮光材料。第二開口O2之深度d2約為0.5微米至2微米。透明電極E1位於第一開口O1與第二開口O2之間。
電致發光結構L實質上位於第二開口O2中。在較佳的實施例中，電致發光結構L係完全位於第二開口O2內。透明電極E1可接觸於電致發光結構L以及光轉換層C。電致發光結構L例如包括傳輸層TL1、傳輸層TL2以及發光層Q。傳輸層TL1與傳輸層TL2的其中一者為電子傳輸層，另一者為電洞傳輸層。發光層Q位於傳輸層TL1與傳輸層TL2之間。傳輸層TL1的材料例如包括氧化鎳、聚二氧乙基噻吩：聚苯乙烯磺酸(PEDOT：PSS)或其他材料或上述材料之組合，但本發明不以此為限。傳輸層TL2的材料例如包括氧化鋅、1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯(TBPI)或其他材料或上述材料之組合，但本發明不以此為限。發光層Q例如包括有機發光材料或量子點材料，量子點材料較佳包括 鈣鈦礦材料。在本實施例中，電致發光結構L係用以發出藍光，但本發明不以此為限。在其他實施例中，電致發光結構L也可以用以發出其他顏色或白色的光。當發光層Q之材料為鈣鈦礦材料且當透明電極E1的材料為氧化銦錫且厚度為50奈米至139奈米時，可有效將發光層Q所產生之光提供至光轉換層C，藉此更有效率的產生色光由基板SB射出。
在本實施例中，第一遮光層B1之第一開口O1之頂部的寬度W11不同於其底部的寬度W12，且第二遮光層B2之第二開口O2之頂部的寬度W22不同於其底部的寬度W21。舉例來說，第一開口O1朝向基板SB處的寬度W12小於第一開口O1朝向透明電極E1處的寬度W11，第二開口O2遠離透明電極E1處的寬度W22大於第二開口O2朝向透明電極E1處的寬度W21。第一開口O1朝向透明電極E1處的寬度W11與第二開口O2朝向透明電極E1處的寬度W21之關係舉例為80%≦W21/W11≦130%較佳，更佳可為W21等於W11。藉此，有利於改善發光元件10之漏光及混光的問題。需注意的是，圖1B中的寬度W11、寬度W12、寬度W21以及寬度W22僅是用以示意，前述的寬度例如是指第一開口O1或第二開口O2在不同水平面上，由上往下觀察(例如圖1A的上視圖)時所能觀察到的最大寬度。
頂電極E2位於第二遮光層B2上。在本實施例中，部分頂電極E2填入第二開口O2並與電致發光結構L接觸，但本發明不以此為限。在其他實施例中，電致發光結構L可填滿第二開口 O2，因此頂電極E2不會填入第二開口O2。在其他實施例中，電致發光結構L可填滿第二開口O2並覆蓋第二遮光層B2之上表面的一部分，因此頂電極E2不會填入第二開口O2。電致發光結構L位於頂電極E2以及透明電極E1之間。在一些實施例中，頂電極E2的材料包括氟化鋰、鋁、鎂、銀或其他材料或上述材料之組合，但本發明不以此為限。在一些實施例中，頂電極E2還可作為反射層，以反射電致發光結構L所發出之光線。
絕緣層I5覆蓋頂電極E2。絕緣層I5例如為封裝材料。
圖2是依照本發明的一實施例的一種發光元件的剖面示意圖。在此必須說明的是，圖2的實施例沿用圖1A、圖1B的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。
圖2之發光元件20與發光元件10的主要差異在於：發光元件20更包括第三遮光層B3。
第三遮光層B3位於主動元件T1與基板SB之間，且具有對應第一開口O1的第三開口O3。第一開口O1朝向基板SB處的寬度W12小於第三開口O3的寬度W3。
在一些較佳的實施例中，第三遮光層B3之材料包含鋁、銀等金屬材料或其他合金材料且厚度大於50奈米。第三遮光層B3可以阻擋光轉換層C所發出的球面光因為大角度散射而導致漏光或混光的問題。在一些較佳的實施例中，第三遮光層B3亦可當作 靜電防護層使用，藉此增加發光元件20的製程良率。
在上述實施例中，藉由控制透明電極E1及頂電極E2，各發光層Q發出的光可朝基板SB方向發射至對應之光轉換層C，藉此以激發出各種不同的色光而產生彩色畫面，且可以改善發光元件漏光的問題以及發光元件混光的問題。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。

Claims (23)

  1. 一種發光元件，包括：一基板；一主動元件，位於該基板上；一第一遮光層，位於該主動元件上，且具有一第一開口；一透明電極，位於該第一遮光層上，且電性連接該主動元件，其中該透明電極的厚度為50奈米至139奈米；一第二遮光層，位於該透明電極上，且具有對應該第一開口的一第二開口；一光轉換層，實質上位於該第一開口中；一電致發光結構，實質上位於該第二開口中，其中該透明電極位於該第一開口與該第二開口之間；以及一頂電極，該電致發光結構位於該頂電極以及該透明電極之間。
  2. 如申請專利範圍第1項所述的發光元件，其中該第一開口朝向該透明電極處的一寬度大於該第二開口朝向該透明電極處的一寬度。
  3. 如申請專利範圍第1項所述的發光元件，更包括：一第三遮光層，位於該主動元件與該基板之間，且具有對應該第一開口的一第三開口。
  4. 如申請專利範圍第3項所述的發光元件，其中該第三遮光層之材料包含鋁且厚度大於50奈米。
  5. 如申請專利範圍第3項所述的發光元件，其中該第一開口朝向該基板處的一寬度小於該第三開口的一寬度。
  6. 如申請專利範圍第1項所述的發光元件，其中該頂電極的至少一部分位於該第二開口中，且該電致發光結構係完全位於該第二開口內，該光轉換層係完全位於該第一開口內。
  7. 如申請專利範圍第1項所述的發光元件，其中該第一開口朝向該基板處的一寬度小於該第一開口朝向該透明電極處的一寬度。
  8. 如申請專利範圍第1項所述的發光元件，其中該主動元件包括：一通道層；一閘極，位於該通道層上；一閘極絕緣層，位於該閘極與該通道層之間；一源極與一汲極，分別電性連接至該通道層；以及一層間絕緣層，位於該源極與該閘極之間以及該汲極與該閘極之間，其中該第一遮光層包括：一第一部分實質上覆蓋該主動元件；以及一第二部分連接該第一部分，該第二部分貫穿該層間絕緣層且該第一開口貫穿該第二部分。
  9. 如申請專利範圍第8項所述的發光元件，其中該閘極絕緣層包括：一厚部重疊於該閘極；以及一薄部重疊於該第一開口以及該第二開口，其中該薄部的厚度約為該厚部的0%至50%。
  10. 如申請專利範圍第1項所述的發光元件，其中該透明電極係接觸於該電致發光結構以及該光轉換層，該透明電極的材料包含氧化銦錫。
  11. 如申請專利範圍第1項所述的發光元件，其中該光轉換層的材料包括量子點材料。
  12. 如申請專利範圍第11項所述的發光元件，其中該量子點材料包括鈣鈦礦材料。
  13. 如申請專利範圍第1項所述的發光元件，其中該第一遮光層與該第二遮光層的材料包括光阻。
  14. 如申請專利範圍第1項所述的發光元件，其中該電致發光結構之材料包含有機發光材料或量子點材料。
  15. 如申請專利範圍第14項所述的發光元件，其中該量子點材料包括鈣鈦礦材料。
  16. 如申請專利範圍第14項所述的發光元件，其中該電致發光結構係用以發出藍光。
  17. 如申請專利範圍第1項所述的發光元件，更包括一封裝層位於該頂電極上。
  18. 一種發光元件，包括：一基板；一主動元件，位於該基板上；一第一遮光層，位於該主動元件上，且具有一第一開口，該第一開口之深度約為4微米至10微米；一透明電極，位於該第一遮光層上，且電性連接該主動元件；一第二遮光層，位於該透明電極上，且具有對應該第一開口的一第二開口，該第二開口之深度約為0.5微米至2微米，其中該第一開口朝向該透明電極處的一寬度W11與該第二開口朝向該透明電極處的一寬度W21之關係為80%≦W21/W11≦130%；一光轉換層，實質上位於該第一開口中；一電致發光結構，實質上位於該第二開口中，其中該透明電極位於該第一開口與該第二開口之間並接觸於該光轉換層以及該電致發光結構；以及一頂電極，該電致發光結構位於該頂電極以及該透明電極之間。
  19. 如申請專利範圍第18項所述的發光元件，其中該第一開口朝向該基板處的一寬度W12小於該寬度W11，該第二開口遠離該透明電極處的一寬度W22大於該寬度W21。
  20. 一種發光元件，包括：一基板；一主動元件，位於該基板上；一第一遮光層，位於該主動元件上，且具有一第一開口；一透明電極，位於該第一遮光層上，且電性連接該主動元件；一第二遮光層，位於該透明電極上，且具有對應該第一開口的一第二開口，其中該第一開口朝向該透明電極處的一寬度大於該第二開口朝向該透明電極處的一寬度；一光轉換層，實質上位於該第一開口中；一電致發光結構，實質上位於該第二開口中，其中該透明電極位於該第一開口與該第二開口之間；以及一頂電極，該電致發光結構位於該頂電極以及該透明電極之間。
  21. 一種發光元件，包括：一基板；一主動元件，位於該基板上，其中該主動元件包括：一通道層；一閘極，位於該通道層上；一閘極絕緣層，位於該閘極與該通道層之間；一源極與一汲極，分別電性連接至該通道層；以及一層間絕緣層，位於該源極與該閘極之間以及該汲極與該閘極之間；一第一遮光層，位於該主動元件上，且具有一第一開口，其中該第一遮光層包括：一第一部分實質上覆蓋該主動元件；以及一第二部分連接該第一部分，該第二部分貫穿該層間絕緣層且該第一開口貫穿該第二部分；一透明電極，位於該第一遮光層上，且電性連接該主動元件；一第二遮光層，位於該透明電極上，且具有對應該第一開口的一第二開口；一光轉換層，實質上位於該第一開口中；一電致發光結構，實質上位於該第二開口中，其中該透明電極位於該第一開口與該第二開口之間；以及一頂電極，該電致發光結構位於該頂電極以及該透明電極之間。
  22. 一種發光元件，包括：一基板；一主動元件，位於該基板上；一第一遮光層，位於該主動元件上，且具有一第一開口；一透明電極，位於該第一遮光層上，且電性連接該主動元件；一第二遮光層，位於該透明電極上，且具有對應該第一開口的一第二開口；一光轉換層，實質上位於該第一開口中；一電致發光結構，實質上位於該第二開口中，其中該透明電極位於該第一開口與該第二開口之間，其中該電致發光結構之材料包含有機發光材料或量子點材料，且該電致發光結構係用以發出藍光；以及一頂電極，該電致發光結構位於該頂電極以及該透明電極之間。
  23. 一種發光元件，包括：一基板；一主動元件，位於該基板上；一第一遮光層，位於該主動元件上，且具有一第一開口；一透明電極，位於該第一遮光層上，且電性連接該主動元件；一第二遮光層，位於該透明電極上，且具有對應該第一開口的一第二開口；一光轉換層，實質上位於該第一開口中；一電致發光結構，實質上位於該第二開口中，其中該透明電極位於該第一開口與該第二開口之間；一頂電極，該電致發光結構位於該頂電極以及該透明電極之間；以及一封裝層，位於該頂電極上。
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