CN108807483A - 发光元件 - Google Patents

发光元件 Download PDF

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CN108807483A
CN108807483A CN201810645534.8A CN201810645534A CN108807483A CN 108807483 A CN108807483 A CN 108807483A CN 201810645534 A CN201810645534 A CN 201810645534A CN 108807483 A CN108807483 A CN 108807483A
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light
opening
emitting component
layer
transparent electrode
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CN108807483B (zh
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江啟圣
詹钧翔
李欣浤
范铎正
蔡庭玮
蔡旻锦
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AU Optronics Corp
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Abstract

一种发光元件，包括基板、主动元件、第一遮光层、透明电极、第二遮光层、光转换层、电致发光结构以及顶电极。主动元件位于基板上。第一遮光层位于主动元件上，且具有第一开口。透明电极位于第一遮光层上，且电性连接主动元件。第二遮光层位于透明电极上，且具有对应第一开口的第二开口。光转换层实质上位于第一开口中。电致发光结构实质上位于第二开口中。透明电极位于第一开口与第二开口之间。电致发光结构位于顶电极以及透明电极之间。

Description

发光元件
技术领域
本发明是有关于一种发光元件，且特别是有关于一种具有遮光层的发光元件。
背景技术
在现有技术中，发光元件(例如显示面板)通常包括具有发光结构(例如发光二极管)的阵列基板以及相对于阵列基板的彩色滤光基板。由于显示面板中的发光结构发出的光线为球面光，因此相邻的发光结构容易互相干扰，并导致漏光与混光的问题。为了减少漏光与混光的问题，通常会增加设置于彩色滤光基板上的黑色矩阵(Black matrix,BM)的厚度，借此减少发光结构之间的互相干扰。然而，此举会导致显示面板的整体厚度上升增加，且改善混光的效果有限。因此，目前亟需一种能改善前述问题的方法。
发明内容
本发明提供一种发光元件，可以改善漏光与混光的问题。
本发明的至少一实施例提供一种发光元件，包括基板、主动元件、第一遮光层、透明电极、第二遮光层、光转换层、电致发光结构以及顶电极。主动元件位于基板上。第一遮光层位于主动元件上，且具有第一开口。透明电极位于第一遮光层上，且电性连接主动元件。第二遮光层位于透明电极上，且具有对应第一开口的第二开口。光转换层实质上位于第一开口中。电致发光结构实质上位于第二开口中。透明电极位于第一开口与第二开口之间。电致发光结构位于顶电极以及透明电极之间。
本发明的至少一实施例提供一种发光元件，包括基板、主动元件、第一遮光层、透明电极、第二遮光层、光转换层、电致发光结构以及顶电极。主动元件位于基板上。第一遮光层位于主动元件上，且具有一第一开口。第一开口的深度约为4微米至10微米。透明电极位于第一遮光层上，且电性连接主动元件。第二遮光层位于透明电极上，且具有对应第一开口的第二开口。第二开口的深度约为0.5微米至2微米。第一开口朝向透明电极处的宽度W11与第二开口朝向透明电极处的宽度W21的关系为80％≦W21/W11≦130％。光转换层实质上位于第一开口中。电致发光结构实质上位于第二开口中。透明电极位于第一开口与第二开口之间并接触于光转换层以及电致发光结构。电致发光结构位于顶电极以及透明电极之间。
本发明的目的之一为，改善发光元件漏光的问题。
本发明的目的之一为，改善发光元件混光的问题。
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合所附图式作详细说明如下。
附图说明
图1A是依照本发明的一实施例的一种发光元件的上视示意图。
图1B是沿着图1A中剖面线AA’的剖面示意图。
图2是依照本发明的一实施例的一种发光元件的剖面示意图。
其中，附图标记：
10、20：发光元件
AA’：线
B1：第一遮光层
B1A：第一部分
B1B：第二部分
B2：第二遮光层
B3：第三遮光层
C：光转换层
CH1、CH2：通道层
CL：信号线
D1、D2：漏极
DL：数据线
E1：透明电极
E2：顶电极
G1、G2：栅极
H1、H2：接触窗
I1、I2、I3、I4、I5：绝缘层
I3A：厚部
I3B：薄部
L：电致发光结构
O1：第一开口
O2：第二开口
Q：发光层
S1、S2：源极
SB：基板
SL：扫描线
T1、T2：主动元件
TL1、TL2：传输层
Vs1、Vs2、Vd1、Vd2：通孔
d1、d2：厚度
具体实施方式
图1A是依照本发明的一实施例的一种发光元件的上视示意图，其中为了方便说明，图1A省略绘示了发光元件中的部分构件。图1B是沿着图1A中剖面线AA’的剖面示意图。
请参考图1A与图1B，发光元件10包括基板SB、主动元件T1、第一遮光层B1、透明电极E1、第二遮光层B2、光转换层C、电致发光结构L以及顶电极E2。在一些实施例中，发光元件10还包括主动元件T2、扫描线SL、数据线DL、信号线CL、绝缘层I1、绝缘层I2、绝缘层I3、绝缘层I4以及绝缘层I5。
扫描线SL相交于数据线DL以及信号线CL。在本实施例中，是以扫描线SL的延伸方向与数据线DL的延伸方向不平行为例。扫描线SL与数据线DL一般是使用金属材料，然而本发明不限于此。在其他实施例中，扫描线SL与数据线DL也可以使用其他导电材料(例如：金属材料的氮化物、金属材料的氧化物、金属材料的氮氧化物或其它合适的材料)或是金属材料与其它材料的堆栈层。在本实施例中，数据线DL与信号线CL可由同一图案化工艺所形成，但本发明不以此为限。
主动元件T1与主动元件T2位于基板SB上。在一些实施例中，主动元件T1与基板SB之间以及主动元件T2与基板SB之间还具有绝缘层I1与绝缘层I2，但本发明不以此为限。
主动元件T1具有源极S1、漏极D1、栅极G1以及通道层CH1。通道层CH1位于基板SB上。栅极G1重迭于通道层CH1，绝缘层I3例如为栅极绝缘层，且位于栅极G1与通道层CH1之间。
绝缘层I4覆盖栅极G1以及绝缘层I3，绝缘层I4例如为层间绝缘层，且位于源极S1与栅极G1之间以及漏极D1与栅极G1之间。漏极D1与源极S1位于绝缘层I4上。通孔Vd1位于绝缘层I3与绝缘层I4中，通孔Vs1位于绝缘层I3与绝缘层I4中。漏极D1通过通孔Vd1电性连接至通道层CH1，而源极S1通过通孔Vs1电性连接至通道层CH1。漏极D1电性连接至电致发光结构L。在本实施例中，主动元件T1的栅极G1电性连接至主动元件T2，且主动元件T1的源极S1电性连接至信号线CL，但本发明不以此为限。在其他实施例中，主动元件T1的栅极G1电性连接至扫描线SL，且主动元件T1的源极S1电性连接至数据线DL。在本实施例中，主动元件T1是以顶部栅极型薄膜晶体管为例来说明，但本发明不限于此。在其他实施例中，上述的主动元件T1也可是以底部栅极型薄膜晶体管。
主动元件T2具有源极S2、漏极D2、栅极G2以及通道层CH2。通道层CH2位于基板SB上。栅极G2重迭于通道层CH2，且与通道层CH2之间夹有绝缘层(例如绝缘层I3)，绝缘层I3例如位于栅极G2与通道层CH2之间。
绝缘层(例如绝缘层I4)覆盖栅极G2以及绝缘层I3，绝缘层I4例如位于源极S2与栅极G2之间以及漏极D2与栅极G2之间。漏极D2与源极S2位于绝缘层I4上，通孔Vd2位于绝缘层I3与绝缘层I4中，通孔Vs2位于绝缘层I3与绝缘层I4中。漏极D2通过通孔Vd2电性电接至通道层CH2，而源极S2通过通孔Vs2电性电接至通道层CH2。在本实施例中，主动元件T2是以顶部栅极型薄膜晶体管为例来说明，但本发明不限于此。根据其他实施例，上述的主动元件T2也可是以底部栅极型薄膜晶体管。
在本实施例中，主动元件T2的漏极D2电性连接至主动元件T1的栅极G1。举例来说，主动元件T2的漏极D2通过接触窗H1电性连接至主动元件T1的栅极G1，接触窗H1位于绝缘层I4中。栅极G2电性连接至扫描线SL，源极D2电性连接至数据线DL。在本实施例中，发光元件10是以包含两个主动元件为例，但本发明不以此为限。在其他实施例中，发光元件可以包含一个或三个以上的主动元件。
第一遮光层B1位于主动元件T1上，且具有第一开口O1。第一开口O1可贯穿第一遮光层B1。第一开口O1的深度d1约为4微米至10微米。在一些实施例中，第一开口O1的深度d1可小于第一遮光层B1的厚度。在一些实施例中，第一遮光层B1的材料包括光刻胶，可以借由黄光工艺形成第一开口O1，但本发明不以此为限。在其他实施例中，第一遮光层B1还可以是其他遮光材料。
在本实施例中，第一遮光层B1包括第一部分B1A以及第二部分B1B。第一部分B1A实质上覆盖主动元件T1。第二部分B1B连接第一部分B1A。第二部分B1B贯穿绝缘层I4(例如为层间绝缘层)，且第一开口O1贯穿第二部分B1B。借由使第二部分B1B贯穿绝缘层I4，第一开口O1的深度d1可以较深。在一些实施例中，绝缘层I3(例如为栅极绝缘层)包括厚部I3A与薄部I3B。厚部I3A重迭于栅极G1。薄部I3B重迭于第一开口O1以及第二开口O2。薄部I3B的厚度约为厚部I3A的0％至50％。借此能进一步增加第一开口O1的深度d1，当薄部I3B的厚度为厚部I3A的厚度的0％时，表示并无设置薄部I3B。
在一些实施例中，第二部分B1B还可以贯穿绝缘层I3、绝缘层I2及绝缘层I1中的至少一层，但本发明不以此为限。
光转换层C实质上位于第一开口O1中。在较佳的实施例中，光转换层C系完全位于第一开口O1内。光转换层C的材料例如包括量子点材料，量子点材料较佳包括钙钛矿材料、硒化镉、磷化铟等等，光转换层C可用以转换光的波长。在其他实施例中，光转换层C的材料例如包括滤光材料，例如为荧光材料等等。
透明电极E1位于第一遮光层B1上，且通过第一遮光层B1中的接触窗H2电性连接主动元件T1的漏极D1。透明电极E1的材料例如包括金属氧化物，例如是氧化铟锡或者是氧化铟锌。在一些实施例中，透明电极E1的材料包含氧化铟锡且厚度为50纳米至139纳米。
第二遮光层B2位于透明电极E1上，且具有对应第一开口O1的第二开口O2，第一开口O1重迭于第二开口O2。在一些实施例中，第二遮光层B2的材料包括光刻胶，可以借由黄光工艺形成第二开口O2，但本发明不以此为限。在其他实施例中，第二遮光层B2还可以是其他遮光材料。第二开口O2的深度d2约为0.5微米至2微米。透明电极E1位于第一开口O1与第二开口O2之间。
电致发光结构L实质上位于第二开口O2中。在较佳的实施例中，电致发光结构L系完全位于第二开口O2内。透明电极E1可接触于电致发光结构L以及光转换层C。电致发光结构L例如包括传输层TL1、传输层TL2以及发光层Q。传输层TL1与传输层TL2的其中一者为电子传输层，另一者为电洞传输层。发光层Q位于传输层TL1与传输层TL2之间。传输层TL1的材料例如包括氧化镍、聚二氧乙基噻吩:聚苯乙烯磺酸(PEDOT:PSS)或其他材料或上述材料的组合，但本发明不以此为限。传输层TL2的材料例如包括氧化锌、1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯(TBPI)或其他材料或上述材料的组合，但本发明不以此为限。发光层Q例如包括有机发光材料或量子点材料，量子点材料较佳包括钙钛矿材料。在本实施例中，电致发光结构L系用以发出蓝光，但本发明不以此为限。在其他实施例中，电致发光结构L也可以用以发出其他颜色或白色的光。当发光层Q的材料为钙钛矿材料且当透明电极E1的材料为氧化铟锡且厚度为50纳米至139纳米时，可有效将发光层Q所产生的光提供至光转换层C，借此更有效率的产生色光由基板SB射出。
在本实施例中，第一遮光层B1的第一开口O1的顶部的宽度W11不同于其底部的宽度W12，且第二遮光层B2的第二开口O2的顶部的宽度W22不同于其底部的宽度W21。举例来说，第一开口O1朝向基板SB处的宽度W12小于第一开口O1朝向透明电极E1处的宽度W11，第二开口O2远离透明电极E1处的宽度W22大于第二开口O2朝向透明电极E1处的宽度W21。第一开口O1朝向透明电极E1处的宽度W11与第二开口O2朝向透明电极E1处的宽度W21的关系举例为80％≦W21/W11≦130％较佳，更佳可为W21等于W11。借此，有利于改善发光元件10的漏光及混光的问题。需注意的是，图1B中的宽度W11、宽度W12、宽度W21以及宽度W22仅是用以示意，前述的宽度例如是指第一开口O1或第二开口O2在不同水平面上，由上往下观察(例如图1A的上视图)时所能观察到的最大宽度。
顶电极E2位于第二遮光层B2上。在本实施例中，部分顶电极E2填入第二开口O2并与电致发光结构L接触，但本发明不以此为限。在其他实施例中，电致发光结构L可填满第二开口O2，因此顶电极E2不会填入第二开口O2。在其他实施例中，电致发光结构L可填满第二开口O2并覆盖第二遮光层B2的上表面的一部分，因此顶电极E2不会填入第二开口O2。电致发光结构L位于顶电极E2以及透明电极E1之间。在一些实施例中，顶电极E2的材料包括氟化锂、铝、镁、银或其他材料或上述材料的组合，但本发明不以此为限。在一些实施例中，顶电极E2还可作为反射层，以反射电致发光结构L所发出的光线。
绝缘层I5覆盖顶电极E2。绝缘层I5例如为封装材料。
图2是依照本发明的一实施例的一种发光元件的剖面示意图。在此必须说明的是，图2的实施例沿用图1A、图1B的实施例的元件标号与部分内容，其中采用相同或近似的标号来表示相同或近似的元件，并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例，在此不赘述。
图2的发光元件20与发光元件10的主要差异在于：发光元件20更包括第三遮光层B3。
第三遮光层B3位于主动元件T1与基板SB之间，且具有对应第一开口O1的第三开口O3。第一开口O1朝向基板SB处的宽度W12小于第三开口O3的宽度W3。
在一些较佳的实施例中，第三遮光层B3的材料包含铝、银等金属材料或其他合金材料且厚度大于50纳米。第三遮光层B3可以阻挡光转换层C所发出的球面光因为大角度散射而导致漏光或混光的问题。在一些较佳的实施例中，第三遮光层B3亦可当作静电防护层使用，借此增加发光元件20的工艺良率。
在上述实施例中，借由控制透明电极E1及顶电极E2，各发光层Q发出的光可朝基板SB方向发射至对应的光转换层C，借此以激发出各种不同的色光而产生彩色画面，且可以改善发光元件漏光的问题以及发光元件混光的问题。
当然，本发明还可有其它多种实施例，在不背离本发明精神及其实质的情况下，熟悉本领域的技术人员可根据本发明作出各种相应的改变和变形，但这些相应的改变和变形都应属于本发明权利要求的保护范围。

Claims (19)

1.一种发光元件，其特征在于，包括：
一基板；
一主动元件，位于该基板上；
一第一遮光层，位于该主动元件上，且具有一第一开口；
一透明电极，位于该第一遮光层上，且电性连接该主动元件；
一第二遮光层，位于该透明电极上，且具有对应该第一开口的一第二开口；
一光转换层，位于该第一开口中；
一电致发光结构，位于该第二开口中，其中该透明电极位于该第一开口与该第二开口之间；以及
一顶电极，该电致发光结构位于该顶电极以及该透明电极之间。
2.根据权利要求1所述的发光元件，其特征在于，该第一开口朝向该透明电极处的一宽度大于该第二开口朝向该透明电极处的一宽度。
3.根据权利要求1所述的发光元件，其特征在于，更包括：
一第三遮光层，位于该主动元件与该基板之间，且具有对应该第一开口的一第三开口。
4.根据权利要求3所述的发光元件，其特征在于，该第三遮光层的材料包含铝且厚度大于50纳米。
5.根据权利要求3所述的发光元件，其特征在于，该第一开口朝向该基板处的一宽度小于该第三开口的一宽度。
6.根据权利要求1所述的发光元件，其特征在于，该顶电极的至少一部分位于该第二开口中，且该电致发光结构系完全位于该第二开口内，该光转换层完全位于该第一开口内。
7.根据权利要求1所述的发光元件，其特征在于，该第一开口朝向该基板处的一宽度小于该第一开口朝向该透明电极处的一宽度。
8.根据权利要求1所述的发光元件，其特征在于，该主动元件包括：
一通道层；
一栅极，位于该通道层上；
一栅极绝缘层，位于该栅极与该通道层之间；
一源极与一漏极，分别电性连接至该通道层；以及
一层间绝缘层，位于该源极与该栅极之间以及该漏极与该栅极之间，其中该第一遮光层包括：
一第一部分覆盖该主动元件；以及
一第二部分连接该第一部分，该第二部分贯穿该层间绝缘层且该第一开口贯穿该第二部分。
9.根据权利要求8所述的发光元件，其特征在于，该栅极绝缘层包括：一厚部重迭于该栅极；以及一薄部重迭于该第一开口以及该第二开口，其中该薄部的厚度约为该厚部的0％至50％。
10.根据权利要求1所述的发光元件，其特征在于，该透明电极接触于该电致发光结构以及该光转换层，该透明电极的材料包含氧化铟锡且厚度为50纳米至139纳米。
11.根据权利要求1所述的发光元件，其特征在于，该光转换层的材料包括量子点材料。
12.根据权利要求11所述的发光元件，其特征在于，该量子点材料包括钙钛矿材料。
13.根据权利要求1所述的发光元件，其特征在于，该第一遮光层与该第二遮光层的材料包括光刻胶。
14.根据权利要求1所述的发光元件，其特征在于，该电致发光结构的材料包含有机发光材料或量子点材料。
15.根据权利要求14所述的发光元件，其特征在于，该量子点材料包括钙钛矿材料。
16.根据权利要求14所述的发光元件，其特征在于，该电致发光结构用以发出蓝光。
17.根据权利要求1所述的发光元件，其特征在于，更包括一封装层位于该顶电极上。
18.一种发光元件，其特征在于，包括：
一基板；
一主动元件，位于该基板上；
一第一遮光层，位于该主动元件上，且具有一第一开口，该第一开口的深度约为4微米至10微米；
一透明电极，位于该第一遮光层上，且电性连接该主动元件；
一第二遮光层，位于该透明电极上，且具有对应该第一开口的一第二开口，该第二开口的深度约为0.5微米至2微米，其中该第一开口朝向该透明电极处的一宽度W11与该第二开口朝向该透明电极处的一宽度W21的关系为80％≦W21/W11≦130％；
一光转换层，位于该第一开口中；
一电致发光结构，位于该第二开口中，其中该透明电极位于该第一开口与该第二开口之间并接触于该光转换层以及该电致发光结构；以及
一顶电极，该电致发光结构位于该顶电极以及该透明电极之间。
19.根据权利要求18所述的发光元件，其特征在于，该第一开口朝向该基板处的一宽度W12小于该宽度W11，该第二开口远离该透明电极处的一宽度W22大于该宽度W21。
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