WO2017038008A1 - Batterie secondaire à semi-conducteur à oxyde et son procédé de fabrication - Google Patents

Batterie secondaire à semi-conducteur à oxyde et son procédé de fabrication Download PDF

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Publication number
WO2017038008A1
WO2017038008A1 PCT/JP2016/003590 JP2016003590W WO2017038008A1 WO 2017038008 A1 WO2017038008 A1 WO 2017038008A1 JP 2016003590 W JP2016003590 W JP 2016003590W WO 2017038008 A1 WO2017038008 A1 WO 2017038008A1
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WO
WIPO (PCT)
Prior art keywords
oxide semiconductor
metal oxide
type metal
semiconductor layer
electrode
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PCT/JP2016/003590
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English (en)
Japanese (ja)
Inventor
和之 津國
拓夫 工藤
光 高野
樹理 小笠原
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株式会社日本マイクロニクス
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Application filed by 株式会社日本マイクロニクス filed Critical 株式会社日本マイクロニクス
Publication of WO2017038008A1 publication Critical patent/WO2017038008A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Une batterie secondaire à semi-conducteur à oxyde selon le présent mode de réalisation est pourvue : d'une première électrode (14) ; d'une couche semi-conductrice à oxyde métallique de type n (16) formée sur la première électrode (14) ; d'une couche de charge (18) qui est formée sur la couche semi-conductrice à oxyde métallique de type n (16) et qui est constituée d'un matériau contenant un matériau isolant et un semi-conducteur à oxyde métallique de type n ; d'une couche semi-conductrice à oxyde métallique de type p (20) formée sur la couche de charge (18) ; et d'une seconde électrode 22 formée sur la couche semi-conductrice à oxyde métallique de type p (20). La couche semi-conductrice à oxyde métallique de type n (16) est caractérisée en ce qu'elle contient un dioxyde de titane ayant une structure d'anatase ou une structure amorphe.
PCT/JP2016/003590 2015-08-31 2016-08-03 Batterie secondaire à semi-conducteur à oxyde et son procédé de fabrication WO2017038008A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-171104 2015-08-31
JP2015171104A JP6656848B2 (ja) 2015-08-31 2015-08-31 酸化物半導体二次電池の製造方法

Publications (1)

Publication Number Publication Date
WO2017038008A1 true WO2017038008A1 (fr) 2017-03-09

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ID=58186806

Family Applications (1)

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PCT/JP2016/003590 WO2017038008A1 (fr) 2015-08-31 2016-08-03 Batterie secondaire à semi-conducteur à oxyde et son procédé de fabrication

Country Status (3)

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JP (1) JP6656848B2 (fr)
TW (1) TWI603492B (fr)
WO (1) WO2017038008A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018168494A1 (fr) * 2017-03-15 2018-09-20 株式会社日本マイクロニクス Dispositif de stockage d'électricité et procédé pour fabriquer une couche d'électrolyte solide
WO2019230216A1 (fr) * 2018-05-28 2019-12-05 株式会社日本マイクロニクス Accumulateur et son procédé de fabrication

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7023049B2 (ja) * 2017-03-16 2022-02-21 株式会社日本マイクロニクス 二次電池
TWI667805B (zh) * 2017-10-13 2019-08-01 行政院原子能委員會核能研究所 降低金屬氧化物半導體之阻值的方法及其量子電池的製法

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WO2013065093A1 (fr) * 2011-10-30 2013-05-10 株式会社日本マイクロニクス Batterie quantique déchargeable et chargeable de manière répétée
JP2015115130A (ja) * 2013-12-10 2015-06-22 株式会社日本マイクロニクス 二次電池及びその製造方法

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EP0831538A3 (fr) * 1996-09-19 1999-07-14 Canon Kabushiki Kaisha Elément photovoltaique comportant une couche dopée spécifiquement
JP2002111019A (ja) * 2000-07-06 2002-04-12 Mitsubishi Chemicals Corp 固体光電変換素子、その製造方法、固体光電変換素子を用いた太陽電池及び電源装置
JP4742620B2 (ja) * 2005-03-03 2011-08-10 セイコーエプソン株式会社 発光素子、発光装置および電子機器
JP2006281026A (ja) * 2005-03-31 2006-10-19 Tokyo Institute Of Technology 窒素酸化物接触還元触媒及びそれを用いた亜酸化窒素の処理方法
KR100811432B1 (ko) * 2006-11-09 2008-03-12 썬텍 주식회사 크롬 기판 상에 이산화티타늄 박막이 코팅된 광촉매체
JP5204079B2 (ja) * 2009-11-24 2013-06-05 株式会社豊田中央研究所 色素増感型太陽電池及びその製法
JP2011149712A (ja) * 2010-01-19 2011-08-04 Seiko Epson Corp 時計用カバーガラス、および時計
JP5300903B2 (ja) * 2011-03-29 2013-09-25 株式会社東芝 ポリマーおよびそれを用いた太陽電池、太陽光発電システム
WO2013065094A1 (fr) * 2011-10-30 2013-05-10 株式会社日本マイクロニクス Dispositif et procédé d'essai de cellule quantique par sonde à semi-conducteur
KR20140090913A (ko) * 2013-01-10 2014-07-18 삼성에스디아이 주식회사 리튬 이차 전지
JP2014154505A (ja) * 2013-02-13 2014-08-25 Ricoh Co Ltd 薄膜固体二次電池素子
JP3183181U (ja) * 2013-02-15 2013-05-09 株式会社倉元製作所 太陽電池を備えた縦型ブラインド用スラット及びこれを用いた縦型ブラインド
JP6304980B2 (ja) * 2013-09-10 2018-04-04 大阪瓦斯株式会社 ペロブスカイト系材料を用いた光電変換装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012046325A1 (fr) * 2010-10-07 2012-04-12 グエラテクノロジー株式会社 Pile rechargeable
WO2013065093A1 (fr) * 2011-10-30 2013-05-10 株式会社日本マイクロニクス Batterie quantique déchargeable et chargeable de manière répétée
JP2015115130A (ja) * 2013-12-10 2015-06-22 株式会社日本マイクロニクス 二次電池及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018168494A1 (fr) * 2017-03-15 2018-09-20 株式会社日本マイクロニクス Dispositif de stockage d'électricité et procédé pour fabriquer une couche d'électrolyte solide
JP2018152532A (ja) * 2017-03-15 2018-09-27 株式会社日本マイクロニクス 蓄電デバイスおよび固体電解質層の製造方法
EP3598466A4 (fr) * 2017-03-15 2021-01-13 Kabushiki Kaisha Nihon Micronics Dispositif de stockage d'électricité et procédé pour fabriquer une couche d'électrolyte solide
WO2019230216A1 (fr) * 2018-05-28 2019-12-05 株式会社日本マイクロニクス Accumulateur et son procédé de fabrication
JP2019207907A (ja) * 2018-05-28 2019-12-05 株式会社日本マイクロニクス 二次電池、及びその製造方法

Also Published As

Publication number Publication date
JP6656848B2 (ja) 2020-03-04
TW201717415A (zh) 2017-05-16
JP2017050341A (ja) 2017-03-09
TWI603492B (zh) 2017-10-21

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