WO2017035866A1 - 薄膜封装方法及有机发光装置 - Google Patents

薄膜封装方法及有机发光装置 Download PDF

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Publication number
WO2017035866A1
WO2017035866A1 PCT/CN2015/089428 CN2015089428W WO2017035866A1 WO 2017035866 A1 WO2017035866 A1 WO 2017035866A1 CN 2015089428 W CN2015089428 W CN 2015089428W WO 2017035866 A1 WO2017035866 A1 WO 2017035866A1
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Prior art keywords
layer
inorganic
coupling agent
organic
agent unit
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French (fr)
Inventor
曾维静
周星宇
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/784,158 priority Critical patent/US9748518B2/en
Publication of WO2017035866A1 publication Critical patent/WO2017035866A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the field of organic light-emitting devices, and in particular to a thin film packaging method and an organic light-emitting device fabricated using the thin film packaging method.
  • OLED Organic Light-Emitting Diode
  • LCD Liquid Crystal Display
  • the OLED flexible display technology uses a very thin organic material light-emitting layer and a flexible substrate, and when an electric current passes, these organic materials emit light.
  • the organic material is easily reacted with water and oxygen, a small amount of water vapor and oxygen can damage the organic light-emitting material, deteriorating the luminescent properties of the device. Therefore, the flexible OLED display not only requires the substrate to have a bendable characteristic, but also has good water and oxygen barrier properties.
  • the packaging method of the flexible OLED display generally uses a thin film package formed by stacking organic/inorganic materials.
  • the surface adhesion of the organic/inorganic material is not good, it may cause peeling of the two materials after a certain number of bending times, resulting in failure of the package.
  • the invention provides a thin film encapsulation method and an organic light-emitting device, which mainly solves the problem that the surface adhesion of the organic/inorganic material is not good when the inorganic/organic materials are stacked in the prior art, and the two materials are peeled off after a certain number of bending times. , resulting in technical problems such as package failure.
  • a technical solution adopted by the present invention is to provide a thin film encapsulation method, comprising the steps of: forming an OLED layer on a TFT substrate; forming a first inorganic encapsulation layer on the OLED layer; Forming a coupling agent unit on the encapsulation layer; forming an organic encapsulation layer on the coupling agent unit; wherein the organic encapsulation layer comprises a buffer layer and a barrier layer sequentially formed on the coupling agent unit, the coupling agent unit and the first
  • the inorganic encapsulating layer and the buffer sublayer are chemically reacted to increase the bonding strength between the first inorganic encapsulating layer and the organic encapsulating layer;
  • the chemical formula of the coupling agent unit component is Y(CH)nX 3 , wherein X is Hydrolyzed groups, hydrolyzed to form silanol, and X combined with inorganic substances to form siloxane; n is a positive integer, the value range is
  • another technical solution adopted by the present invention is to provide a thin film encapsulation method, comprising the steps of: forming an OLED layer on a TFT substrate; forming a first inorganic encapsulation layer on the OLED layer; Forming a coupling agent unit on the inorganic encapsulating layer; forming an organic encapsulating layer on the coupling agent unit; wherein the organic encapsulating layer comprises a buffer layer and a barrier layer sequentially formed on the coupling agent unit, the coupling agent unit and the first An inorganic encapsulating layer and a buffer sublayer chemically react to increase the bonding strength between the first inorganic encapsulating layer and the organic encapsulating layer.
  • the chemical formula of the coupling agent unit is Y(CH)nX 3 , wherein X is a hydrolyzable group, hydrolyzed to form silanol, and X is combined with an inorganic substance to form a siloxane; n is a positive integer The value ranges from 0 to 3; Y is an organic functional group that chemically reacts with a polymer to form a hydrogen bond.
  • X is a methoxy group, a chloro group, an ethoxy group, an acetoxy group or a methoxyethoxy group
  • Y is a vinyl group, an amino group, a methacryloxy group, a decyl group or a ureido group.
  • the organic encapsulating layer has a chemical formula of SiO x C y H z and a thickness of 1000 nm to 5000 nm.
  • the buffer sublayer is deposited on the coupling agent unit by plasma enhanced chemical vapor deposition, and the gas flow ratio of the deposition buffer layer is O 2 :HMDSO ⁇ 3:1, wherein the RF power of the HMDSO is 200 ⁇ 800W, HMDSO flow rate is 10 ⁇ 50sccm, O 2 RF power is 200 ⁇ 800W, time is 10 ⁇ 50min.
  • the barrier layer is deposited on the buffer layer by plasma enhanced chemical vapor deposition, and the gas flow ratio of the deposition buffer layer is 3:1 ⁇ O 2 :HMDSO ⁇ 18:1, wherein the RF power of the HMDSO
  • the flow rate is from 200 to 800 W
  • the flow rate of HMDSO is 10 to 50 sccm
  • the RF power of O 2 is 200 to 800 W
  • the deposition time is ⁇ 2 min
  • the deposition thickness is 10 to 50 nm.
  • the first inorganic encapsulating layer component is SiO 2
  • the first inorganic encapsulating layer is formed by plasma enhanced chemical vapor deposition
  • the gas flow ratio of the first inorganic encapsulating layer is N 2 O:SiH 4 >2:1
  • the radio frequency power of SiH 4 is 10 to 100 W
  • the flow rate of SiH 4 is 10 to 50 sccm
  • the radio frequency power of N 2 O is 10 to 100 W
  • the deposition time is 10 to 20 min
  • the deposition thickness is 10 to 50 nm.
  • the first inorganic encapsulating layer component is SiN x
  • the first inorganic encapsulating layer is formed by plasma enhanced chemical vapor deposition
  • the gas flow ratio used for depositing the first inorganic encapsulating layer is (N 2 +NH 3 ):SiH 4 >2:1, wherein the radio frequency power of SiH 4 is 10 to 100 W, the flow rate of SiH 4 is 10 to 50 sccm, the radio frequency power of N 2 is 10 to 100 W, the radio frequency power of NH 3 is 10 to 100 W, and the deposition time is 10 ⁇ 20min, the deposition thickness is 10 ⁇ 50nm.
  • the first inorganic encapsulating layer component is SiON x
  • the first inorganic encapsulating layer is formed by plasma enhanced chemical vapor deposition
  • the gas flow ratio used for depositing the first inorganic encapsulating layer is (N 2 +NH 3 +NO 2 ) SiH 4 >2:1, wherein the radio frequency power of SiH 4 is 10 to 100 W, the flow rate of SiH 4 is 10 to 50 sccm, the radio frequency power of N 2 is 10 to 100 W, and the radio frequency power of NH 3 is 10 to 100 W.
  • the time is 10-20 min
  • the deposition thickness is 10-50 nm.
  • the method further comprises: forming a second inorganic encapsulation layer on the organic encapsulation layer.
  • an organic light emitting device including: a TFT substrate, an OLED layer, a first inorganic encapsulating layer, a coupling agent unit, and an organic encapsulating layer;
  • the OLED layer is disposed on the TFT substrate;
  • the first inorganic encapsulation layer is laminated on the OLED layer;
  • the coupling agent unit is disposed on the first inorganic encapsulation layer;
  • the organic encapsulation layer is disposed on the coupling agent unit; wherein the organic encapsulation layer has a sequence The laminated buffer layer and the barrier layer, the coupling agent unit chemically reacts with the first inorganic encapsulating layer and the buffer sublayer to improve the bonding strength between the first inorganic encapsulating layer and the organic encapsulating layer.
  • the main component of the coupling agent unit has a chemical formula of Y(CH)nX 3 , wherein X is a hydrolyzable group, generates silanol upon hydrolysis, and X combines with an inorganic substance to form a siloxane; n is positive An integer ranging from 0 to 3; Y is an organic functional group that chemically reacts with a polymer to form a hydrogen bond.
  • X is a methoxy group, a chloro group, an ethoxy group, an acetoxy group or a methoxyethoxy group
  • Y is a vinyl group, an amino group, a methacryloxy group, a decyl group or a ureido group.
  • the organic encapsulating layer has a chemical formula of SiO x C y H z and a thickness of 1000 nm to 5000 nm.
  • the buffer sublayer is deposited on the coupling agent unit by a PECVD method, and the gas flow ratio of the deposition buffer layer is O 2 /HMDSO ⁇ 3:1, wherein the RF power of the HMDSO is 200-800 W, and the flow rate of the HMDSO It is 10 to 50 sccm, and the RF power of O 2 is 200 to 800 W, and the time is 10 to 50 min.
  • the barrier layer is deposited on the buffer layer by a PECVD method, and the gas flow ratio of the deposition buffer layer is 3:1 ⁇ O2/HMDSO ⁇ 18:1, wherein the RF power of the HMDSO is 200-800W, HMDSO The flow rate is 10 to 50 sccm, the RF power of O 2 is 200 to 800 W, the deposition time is ⁇ 2 min, and the deposition thickness is 10 to 50 nm.
  • the first inorganic encapsulating layer is mainly composed of SiO 2 , and the first inorganic encapsulating layer is deposited by a PECVD method, and the first inorganic encapsulating layer is deposited using a gas flow ratio of N 2 O:SiH 4 >2:1, wherein SiH
  • the RF power of 4 is 10 to 100 W
  • the flow rate of SiH 4 is 10 to 50 sccm
  • the RF power of N 2 O is 10 to 100 W
  • the deposition time is 10 to 20 min
  • the deposition thickness is 10 to 50 nm.
  • the OLED layer, the first inorganic encapsulating layer, the coupling agent unit, the buffer sublayer, and the barrier sublayer are sequentially laminated on the TFT substrate.
  • the OLED layer, the first inorganic encapsulating layer, the buffer sublayer, and the barrier sublayer are sequentially laminated on the TFT substrate, and the coupling agent unit is wrapped around the outer edges of the first inorganic encapsulating layer and the buffer sublayer.
  • a coupling agent unit is disposed between the first inorganic encapsulating layer and the buffer sub-layer to improve the first inorganic
  • the adhesive strength between the encapsulating layer and the organic encapsulating layer makes it difficult to peel off and has good water and oxygen barrier properties.
  • FIG. 1 is a schematic view showing a manufacturing process of a thin film packaging method according to an embodiment of the present invention
  • FIG. 2 is a schematic view showing a manufacturing process of a thin film packaging method according to another embodiment of the present invention.
  • FIG. 3 is a schematic view showing a manufacturing process of a thin film packaging method according to another embodiment of the present invention.
  • FIG. 4 is a schematic cross-sectional view showing an organic light emitting device according to an embodiment of the present invention.
  • FIG. 5 is a schematic view showing the structure of a TFT substrate of the organic light-emitting device of FIG.
  • FIG. 6 is a schematic structural view of an OLED layer of the organic light-emitting device of FIG. 4;
  • FIG. 7 is a schematic cross-sectional structural view of an organic light emitting device according to another embodiment of the present invention.
  • FIG. 7a is a schematic cross-sectional view of an organic light emitting device according to another embodiment of the present invention.
  • FIG. 8 is a schematic cross-sectional view showing an organic light-emitting device according to another embodiment of the present invention.
  • FIG. 1 is a schematic diagram of a manufacturing process of a thin film encapsulation method according to an embodiment of the present invention.
  • the thin film encapsulation method of the present invention specifically includes the following steps:
  • the OLED layer is laminated on the TFT substrate by vacuum evaporation or inkjet printing, etc., wherein when the inkjet printing method is used, the OLED layer is completed in an inert atmosphere, and the water oxygen content of the OLED layer is ⁇ 10ppm.
  • the TFT substrate includes a flexible glass substrate and a TFT formed on the flexible glass substrate, which is a light and transparent glass that can be easily bent by a person.
  • the TFT is used to drive the OLED layer.
  • the OLED layer includes a positive electrode sublayer, a hole transporting sublayer, a light emitting sublayer, an electron transporting sublayer, and a metal cathode sublayer formed on the flexible glass substrate in sequence, wherein the positive electrode sublayer is electrically connected to the power source positive electrode, and the metal cathode is The pole layer is electrically connected to the negative pole of the power source.
  • the holes of the positive electrode sub-layer and the charge of the cathode sub-layer are combined in the illuminating sub-layer to produce light, and three primary colors of red, green and blue (RGB) are generated depending on the composition of the illuminating sub-layer.
  • the basic color is formed such that the OLED layer emits visible light.
  • the first inorganic encapsulating layer component is SiO 2
  • the first inorganic encapsulating layer is formed by plasma enhanced chemical vapor deposition, and the first inorganic encapsulating layer is deposited using a gas flow ratio of N 2 O:SiH 4 >2:1, wherein
  • the radio frequency power of SiH 4 is 10 to 100 W
  • the flow rate of SiH 4 is 10 to 50 sccm
  • the radio frequency power of N 2 O is 10 to 100 W
  • the deposition time of the first inorganic encapsulation layer is 10 to 20 min
  • the deposition thickness is 10 to 50 nm.
  • the reaction chamber gas pressure is 50 to 500 Pa.
  • the first inorganic encapsulating layer component may also be SiN x
  • the first inorganic encapsulating layer is formed by plasma enhanced chemical vapor deposition
  • the gas flow ratio used for depositing the first inorganic encapsulating layer is (N 2 +NH 3 ):SiH 4 >2:1, wherein the radio frequency power of SiH 4 is 10 to 100 W, the flow rate of SiH 4 is 10 to 50 sccm, the radio frequency power of N 2 is 10 to 100 W, and the RF power of NH 3 is 10 to 100 W
  • the deposition time of the first inorganic encapsulation layer is 10 to 20 min
  • the deposition thickness is 10 to 50 nm
  • the gas pressure in the reaction chamber is 50 to 500 Pa.
  • the first inorganic encapsulating layer component may also be SiON x
  • the first inorganic encapsulating layer is formed by plasma enhanced chemical vapor deposition
  • the gas flow ratio used for depositing the first inorganic encapsulating layer is ( N 2 +NH 3 +NO 2 ):SiH 4 >2:1, wherein the radio frequency power of SiH 4 is 10 to 100 W, the flow rate of SiH 4 is 10 to 50 sccm, and the radio frequency power of N 2 is 10 to 100 W, NH 3
  • the RF power is 10 to 100 W
  • the deposition time of the first inorganic encapsulation layer is 10 to 20 min
  • the deposition thickness is 10 to 50 nm
  • the gas pressure in the reaction chamber is 50 to 500 Pa.
  • the chemical formula of the coupling agent unit is Y(CH)nX 3 , wherein X is a hydrolyzable group, generates silanol (Si(OH) 3 ) upon hydrolysis, and X combines with inorganic substances to form a siloxane.
  • n is a positive integer, the value range is 0 to 3;
  • Y is an organic functional group, which chemically reacts with a high molecular polymer to form a hydrogen bond and is dissolved therein.
  • X may be methoxy, chloro, ethoxy, acetoxy or methoxyethoxy
  • Y may be a vinyl group, an amino group, a methacryloxy group, a decyl group or a ureido group, which can react with an organic substance.
  • the coupling agent unit may be laminated on the first inorganic encapsulating layer by vacuum evaporation film formation or spin coating film formation, and if a coupling agent unit is formed by a vacuum evaporation method, the TFT substrate temperature is ⁇ 100 ° C, and the degree of vacuum The requirement is 5 ⁇ 10E-5Pa. If a coupling agent unit is formed using a spin-on film formation method, the water oxygen content is controlled to be ⁇ 10 ppm, and it is cured to form a film by baking, and the baking temperature is ⁇ 100 °C. The thickness of the coupling agent unit in this example was ⁇ 100 nm.
  • the outer edge of the coupling agent unit in this embodiment is flush with the outer edge of the first inorganic encapsulating layer.
  • the outer edge of the coupling agent unit may be outside the outer portion of the first inorganic encapsulating layer. Along the big or small.
  • the organic encapsulation layer includes a buffer layer and a barrier layer formed on the coupling agent unit in sequence, and the coupling agent unit chemically reacts with the first inorganic encapsulation layer and the buffer sublayer to improve the first inorganic encapsulation layer and the organic encapsulation layer The bond strength between.
  • the organic encapsulating layer has a chemical formula of SiO x C y H z and a thickness of 1000 nm to 5000 nm.
  • the buffer sublayer is mainly composed of organic components, which can be deposited on the coupling agent unit by plasma enhanced chemical vapor deposition, and the gas flow ratio of the deposited buffer layer is O 2 : HMDSO (hexamethyldisiloxane) ⁇ 3:1, wherein the RF power of the HMDSO is 200-800 W, the flow rate of the HMDSO is 10-50 sccm, the RF power of the O 2 is 200-800 W, the deposition time of the buffer layer is 10-50 min, and the gas pressure in the reaction chamber It is 30 to 200 Pa.
  • HMDSO hexamethyldisiloxane
  • the barrier layer is mainly composed of an organic component, such as SiO 2 , etc., which can be deposited on the buffer layer by plasma enhanced chemical vapor deposition, and the gas flow ratio used for depositing the buffer layer is 3:1 ⁇ O 2 : HMDSO ⁇ 18:1, wherein the RF power of HMDSO is 200-800W, the flow rate of HMDSO is 10 ⁇ 50sccm, the RF power of O 2 is 200-800W, the deposition time of the barrier layer is ⁇ 2min, and the deposition thickness is 10 ⁇ 50nm.
  • the reaction chamber gas pressure is 30 to 200 Pa.
  • the buffer sublayer in this embodiment is laminated on the coupling agent unit, and the outer edge of the buffer sublayer is flush with the outer edge of the coupling agent unit.
  • the outer edge of the buffer sublayer may also be used. Larger or smaller than the outer edge of the coupling agent unit.
  • the second inorganic encapsulation layer is laminated on the organic encapsulation layer and is wrapped around the outer edges of the organic encapsulation layer, the coupling agent unit, the first inorganic encapsulation layer, and the OLED layer.
  • the S10-50 step can be repeated after the S50 step to form a plurality of thin film encapsulation devices.
  • the molecular structure of the coupling agent unit (Y(CH)nX 3 ) in this embodiment has two different chemical functional groups, that is, a hydrolyzable group X, an organic functional group Y, and the X group is a hydrophilic group. It is easy to react with the surface of the inorganic substance; the Y group is an organophilic group, which can react with the polymer or form a hydrogen bond, and the X group chemically reacts with the first inorganic encapsulating layer, Y The group chemically reacts with the buffer sublayer to improve the interfacial interaction between the inorganic substance and the organic substance, and enhance the adhesion of the inorganic layer to the organic layer.
  • the present invention maintains the content of the oxidant (ie, O 2 and HMDSO), and on the other hand, maintains the contact portion of the buffer layer and the coupling agent.
  • the oxidant ie, O 2 and HMDSO
  • the buffering property, encapsulating small particles of impurities, filling small holes generated by the first inorganic encapsulating layer can reduce the stress of the film layer, realize the functions of flattening, etc., and can increase the number of bends of the flexible glass substrate, etc.;
  • the sublayer is closer to the inorganic property in the portion in contact with the next first inorganic encapsulating layer, thereby improving its adhesion to the first inorganic encapsulating layer.
  • FIG. 2 is a schematic diagram of a manufacturing process of a thin film encapsulation method according to another embodiment of the present invention.
  • This embodiment is substantially the same as the above embodiment, except that the formation position of the coupling agent unit, the film in this embodiment
  • the encapsulation method specifically includes the following steps:
  • the first inorganic encapsulation layer in this embodiment is laminated on the OLED layer and covers the outer edge of the OLED layer.
  • the first coupling agent subunit of the embodiment is not formed by lamination on the first inorganic encapsulation layer, but is formed On the outer edge of the first inorganic encapsulation layer.
  • the organic encapsulation layer of this embodiment includes a buffer sublayer and a barrier sublayer formed on the first inorganic encapsulation layer in this order;
  • a second coupling agent subunit is formed on the outer edge of the buffer sublayer and extends from top to bottom to the first coupling agent subunit to form integral with the first coupling agent subunit.
  • the first coupling agent subunit and the second coupling agent subunit are respectively chemically reacted with the first inorganic encapsulating layer and the buffer sublayer to increase the bonding strength between the first inorganic encapsulating layer and the buffer sublayer.
  • FIG. 3 is a schematic diagram of a manufacturing process of a thin film encapsulation method according to another embodiment of the present invention. This embodiment is substantially the same as the above embodiment, except that the formation position of the coupling agent unit, the film in this embodiment
  • the encapsulation method specifically includes the following steps:
  • the outer edge of the buffer layer may be aligned with the outer edge of the first inorganic encapsulation layer.
  • the outer edge of the first inorganic encapsulation layer may be larger than the outer edge of the buffer sublayer to make the first inorganic A vacant portion is formed on the upper surface of the encapsulation layer.
  • a coupling agent unit is formed on the outer edge of the buffer sublayer and the first inorganic encapsulation layer.
  • the buffer layer in the present embodiment and the outer edge of the first inorganic encapsulation layer are coated with a coupling agent unit, and the coupling agent unit is chemically reacted with the first inorganic encapsulation layer and the buffer sublayer to improve the first inorganic encapsulation layer and The bond strength between the organic encapsulation layers.
  • the coupling agent unit is wrapped around the outer edge of the first inorganic encapsulation layer and extends to the vacant portion to make the first inorganic encapsulation layer and the buffer The layers all react chemically with the coupling unit.
  • FIG. 4 is a schematic cross-sectional view of an organic light-emitting device according to an embodiment of the present invention.
  • the present invention further provides an organic light-emitting device 1 which is fabricated by the above-described thin film packaging method.
  • the organic light-emitting device 1 of the present invention includes a TFT substrate 10, an OLED layer 20, a first inorganic encapsulating layer 30, a coupling agent unit 40, and an organic encapsulating layer 50.
  • the OLED layer 20 is disposed on the TFT substrate 10, the first inorganic encapsulation layer 30 is laminated on the OLED layer 20, the coupling agent unit 40 is laminated on the first inorganic encapsulation layer 30, and the organic encapsulation layer 50 is disposed on the coupling agent unit 40.
  • the organic encapsulating layer 50 has a buffer layer 51 and a barrier layer 52 which are sequentially laminated on the coupling agent unit 40, and the coupling agent unit 40 chemically reacts with the first inorganic encapsulating layer 30 and the buffer sublayer 51, respectively.
  • the adhesion strength between the first inorganic encapsulating layer 30 and the organic encapsulating layer 50 is improved.
  • FIG. 5 is a schematic structural diagram of a TFT substrate of the organic light-emitting device of FIG.
  • the OLED layer 20 of the present embodiment may be laminated on the TFT substrate 10 by vacuum evaporation or inkjet printing or the like, wherein the OLED layer 20 has a water oxygen content of ⁇ 10 ppm.
  • the TFT substrate 10 includes a flexible glass substrate 11 and a TFT 12 provided on the flexible glass substrate 11, which is a thin, transparent glass that can be easily bent by a person.
  • the TFT 12 is used to drive the OLED layer.
  • FIG. 6 is a schematic structural diagram of an OLED layer of the organic light-emitting device 1 of FIG.
  • the OLED layer 20 includes a positive electrode sub-layer 21, a hole transport sub-layer 22, a light-emitting sub-layer 23, an electron transport sub-layer 24, and a metal cathode sub-layer 25, which are sequentially stacked on the flexible glass substrate 11, wherein the positive electrode sub-layer 21 and the power source The positive electrode is electrically connected to the 26, and the metal cathode sub-layer 25 is electrically connected to the negative electrode of the power source 26.
  • the charges of the holes of the positive electrode sub-layer 21 and the charge of the cathode sub-layer are combined in the illuminating sub-layer 23 to produce light, and three primary colors of red, green and blue RGB are generated depending on the formulation, which constitutes a basic The color is such that the OLED layer 20 emits light.
  • the first inorganic encapsulating layer 30 in this embodiment has a composition of SiO 2 , and the first inorganic encapsulating layer 30 is deposited by plasma enhanced chemical vapor deposition.
  • the gas flow ratio of the first inorganic encapsulating layer 30 is N 2 O: SiH 4 >2:1, wherein the radio frequency power of SiH 4 is 10 to 100 W, the flow rate of SiH 4 is 10 to 50 sccm, the radio frequency power of N 2 O is 10 to 100 W, and the deposition time of the first inorganic encapsulation layer 30 is 10. ⁇ 20min, the deposition thickness is 10 ⁇ 50nm, the reaction chamber gas pressure is 50 ⁇ 500Pa.
  • the first inorganic encapsulating layer 30 may also be SiN x , and the first inorganic encapsulating layer 30 is formed by plasma enhanced chemical vapor deposition, and the proportion of gas flow used for depositing the first inorganic encapsulating layer 30 is determined.
  • the first inorganic encapsulating layer 30 component may also be SiON x
  • the first inorganic encapsulating layer 30 is deposited by plasma enhanced chemical vapor deposition
  • the gas flow ratio of the first inorganic encapsulating layer 30 is (N 2 + ).
  • the deposition time of the first inorganic encapsulating layer 30 is 10 to 20 minutes
  • the deposition thickness is 10 to 50 nm
  • the gas pressure in the reaction chamber is 50 to 500 Pa.
  • the chemical formula of the component of the coupling agent unit 40 in this embodiment is Y(CH)nX 3 , wherein X is a hydrolyzable group, and hydrolyzed to form silanol (Si(OH) 3 ), and X and inorganic
  • X is a hydrolyzable group, and hydrolyzed to form silanol (Si(OH) 3 ), and X and inorganic
  • n is a positive integer, and the value ranges from 0 to 3
  • Y is an organic functional group, which chemically reacts with the high molecular polymer to form a hydrogen bond and is dissolved therein.
  • X may be methoxy, chloro, ethoxy, acetoxy or methoxyethoxy
  • Y may be a vinyl group, an amino group, a methacryloxy group, a decyl group or a ureido group, which can react with an organic substance.
  • the coupling agent unit may be laminated on the first inorganic encapsulating layer by vacuum evaporation film formation or spin coating film formation, and if a coupling agent unit is formed by a vacuum evaporation method, the TFT substrate temperature is ⁇ 100 ° C, and the degree of vacuum The requirement is 5 ⁇ 10E-5Pa. If a coupling agent unit is formed using a spin-on film formation method, the water oxygen content is controlled to be ⁇ 10 ppm, and it is cured to form a film by baking, and the baking temperature is ⁇ 100 °C. The thickness of the coupling agent unit in this example was ⁇ 100 nm.
  • the coupling agent unit 40 in this embodiment is laminated on the first inorganic encapsulating layer 30, and the coupling agent unit 40
  • the outline of the first inorganic encapsulating layer 30 is the same as the outer edge of the first inorganic encapsulating layer 30, of course, in other embodiments, outside the coupling agent unit 40. It is larger or smaller than the outer edge of the first inorganic encapsulating layer 30.
  • the organic encapsulation layer 50 includes a buffer sublayer 51 and a barrier sublayer 52 which are sequentially formed on the coupling agent unit 40, and the coupling agent unit 40 chemically reacts with the first inorganic encapsulation layer 30 and the buffer sublayer 51 to improve the first inorganic layer.
  • the organic encapsulating layer 50 has a chemical formula of SiO x C y H z and a thickness of 1000 nm to 5000 nm.
  • the buffer sub-layer 51 is deposited on the coupling agent unit 40 by plasma enhanced chemical vapor deposition.
  • the gas flow ratio of the deposition buffer layer 51 is O 2 /HMDSO ⁇ 3:1, wherein the RF power of the HMDSO is 200. ⁇ 800W, HMDSO flow rate is 10 ⁇ 50sccm, O 2 RF power is 200 ⁇ 800W, time is 10 ⁇ 50min, reaction chamber gas pressure is 30 ⁇ 200Pa.
  • the barrier layer 52 is deposited on the buffer layer 51 by plasma enhanced chemical vapor deposition.
  • the gas flow ratio of the deposition buffer layer 51 is 3:1 ⁇ O2/HMDSO ⁇ 18:1, wherein the RF power of the HMDSO It is 200-800W, the flow rate of HMDSO is 10 ⁇ 50sccm, the RF power of O 2 is 200-800W, the deposition time is ⁇ 2min, the deposition thickness is 10 ⁇ 50nm, and the gas pressure in the reaction chamber is 30-200Pa.
  • the outline of the buffer sub-layer 51 in this embodiment is the same as the outline of the coupling agent unit 40.
  • the outer surface area of the buffer sub-layer 51 is larger or smaller than the outer surface area of the coupling agent unit 40. .
  • the organic light-emitting device 1 may further include a second inorganic encapsulation layer 60 laminated on the machine encapsulation layer, and coated on the organic encapsulation layer 50, the coupling agent unit 40, the first inorganic encapsulation layer 30, and The outer edge of the OLED layer 20.
  • FIG. 7 is a schematic cross-sectional view of an organic light-emitting device according to another embodiment of the present invention.
  • the present embodiment is substantially the same as the above embodiment, except that the coupling unit 40 is disposed.
  • the organic light-emitting device 1 in the present embodiment includes a coupling agent unit 40 and an OLED layer 20, a first inorganic encapsulating layer 30, a buffer sub-layer 51, and a barrier sub-layer 52 which are sequentially laminated on the TFT substrate 10.
  • the coupling agent unit 40 of the present embodiment includes a first coupling agent subunit 41 and a second coupling agent subunit 42, and the first coupling agent subunit 41 is wrapped around the outer edge of the first inorganic encapsulating layer 30,
  • the second coupling agent subunit 42 is wrapped around the outer edge of the buffer sublayer 51, and the second coupling agent subunit 42 is integrally formed with the second coupling agent subunit 42.
  • the first coupling agent sub-unit 41 and the second coupling agent sub-unit 42 respectively chemically react with the first inorganic encapsulating layer 30 and the buffer sub-layer 51 to improve the adhesion between the first inorganic encapsulating layer 30 and the organic encapsulating layer 50.
  • Strength It should be noted that the first inorganic encapsulation layer 30 in this embodiment is laminated on the OLED layer 20 and wrapped on the outer edge of the OLED layer 20.
  • the lower surface area of the buffer sublayer 51 may be the same as the upper surface area of the first inorganic encapsulation layer 30, that is, the outer edge of the buffer sublayer 51 is aligned with the outer edge of the first inorganic encapsulation layer 30.
  • the lower surface area of the buffer sub-layer 51 is smaller than the upper surface area of the first inorganic encapsulation layer 30, so that the upper surface of the first inorganic encapsulation layer 30 is formed.
  • the vacant part 311 is the vacant part 311.
  • the coupling agent unit 40 is wrapped around the outer edge of the first inorganic encapsulating layer 30 and extends to the vacant portion 311 such that the first inorganic encapsulating layer 30 and the buffer sub-layer 51 both chemically react with the coupling agent unit 40.
  • FIG. 8 is a schematic cross-sectional view of an organic light-emitting device according to another embodiment of the present invention.
  • the present embodiment is substantially the same as the above embodiment, except that the coupling unit 40 is disposed.
  • the organic light-emitting device 1 in the present embodiment includes a coupling agent unit 40 and an OLED layer 20, a first inorganic encapsulating layer 30, a buffer sub-layer 51, and a barrier sub-layer 52 which are sequentially laminated on the TFT substrate 10.
  • the first inorganic encapsulating layer 30 has a frustum portion 31 and a wrap portion 32.
  • the frustum portion 31 has a truncated cone shape
  • the buffer sublayer 51 has an inverted frustum shape.
  • the layer 51 is formed in an hourglass shape with a large intermediate portion at both ends.
  • the frustum portion 31 includes a first upper flat surface 33, a first lower flat surface 34, and a first inclined surface 35.
  • the first upper plane 33 is spaced apart from the first lower plane 34, and the first slope 35 extends from the outer edge of the first upper plane 33 to the outer edge of the first lower plane 34, wherein the area of the first upper plane 33 is larger than
  • the lower plane 34 is small so that the angle formed by the first slope 35 and the first lower plane 34 is an acute angle.
  • the buffer sublayer 51 includes a second upper plane 511, a second lower plane 512, and a second slope 513.
  • the second upper plane 511 is spaced apart from the second lower plane 512, and the second slope 513 extends from the outer edge of the second upper plane 511 to the outer edge of the second lower plane 512, wherein the area of the second upper plane 511 is larger than Two lower planes 512 Small so that the angle formed by the second slope 513 and the second lower plane 512 is an obtuse angle.
  • the first inclined surface 35 and the second inclined surface 513 form a groove, and the coupling agent unit 40 is disposed in the groove, wherein the coupling agent unit 40 chemically reacts with the first inclined surface 35 and the second inclined surface 513 to improve The bonding strength between the first inorganic encapsulating layer 30 and the organic encapsulating layer 50.
  • the present invention also provides a display device including the at least one or more organic light-emitting devices 1 described above.
  • a coupling agent unit 40 is disposed between the first inorganic encapsulating layer 30 and the buffer sub-layer 51 to improve the first inorganic encapsulating layer 30 and the organic encapsulating layer 50.
  • the bond strength between them makes it difficult to peel off and has good water and oxygen barrier properties.

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Abstract

一种薄膜封装方法及有机发光装置，封装方法包括如下步骤：在TFT基板上形成OLED层；在OLED层上形成第一无机封装层；在第一无机封装层上形成偶联剂单元；在偶联剂单元上形成有机封装层；其中，有机封装层包括依次形成的缓冲子层和阻挡子层，偶联剂单元分别与第一无机封装层、缓冲子层发生化学反应以提高第一无机封装层与有机封装层之间的粘合强度，使之不易剥离，具有良好的水氧阻隔性。

Description

薄膜封装方法及有机发光装置 【技术领域】
本发明涉及有机发光设备领域，特别是涉及一种薄膜封装方法及使用该薄膜封装方法制成的有机发光装置。
【背景技术】
OLED(有机发光二极管，Organic Light-Emitting Diode)显示器，具备自发光、高亮度、宽视角、高对比度、可挠曲、低能耗等特性，因此受到广泛的关注，并作为新一代的显示方式，已开始逐渐取代传统LCD(液晶显示器，Liquid Crystal Display)，被广泛应用在手机屏幕、电脑显示器、全彩电视等。其中，OLED柔性显示技术采用非常薄的有机材料发光层和柔性基板，当有电流通过时，这些有机材料就会发光。但是由于有机材料易与水氧反应，很少量的水蒸气和氧气就能损害有机发光材料，使器件的发光性能劣化。因此，柔性OLED显示器不仅要求基板具有可弯曲的特点，同时应具有良好的水氧阻隔性。
目前柔性OLED显示器的封装方法一般使用有机/无机材料堆叠形式形成的薄膜封装。但若有机/无机材料的表面粘附性不好，则可能导致在一定的弯曲次数以后，出现两种材料剥离，从而导致封装失效的现象。
【发明内容】
本发明提供一种薄膜封装方法及有机发光装置，主要解决现有技术无机/有机材料堆叠时，有机/无机材料的表面粘附性不好，导致在一定的弯曲次数以后，出现两种材料剥离，从而导致封装失效等技术问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种薄膜封装方法，其包括如下步骤：在TFT基板上形成OLED层；在OLED层上形成第一无机封装层；在第一无机封装层上形成偶联剂单元；在偶联剂单元上形成有机封装层；其中，有机封装层包括依次形成于偶联剂单元上的缓冲子层和阻挡子层，偶联剂单元与第一无机封装层、缓冲子层发生化学反应以提高第一无机封 装层与有机封装层之间的粘合强度；偶联剂单元成份的化学通式为Y(CH)nX3，其中，X为可水解的基团，水解时生成硅醇，且X与无机物质结合生成硅氧烷；n为正整数，数值范围为0～3；Y为有机官能团，与高分子聚合物发生化学反应生成氢键；有机封装层的化学通式为SiOxCyHz，厚度为1000nm～5000nm；缓冲子层通过等离子体增强化学气相沉积法沉积形成于偶联剂单元上，沉积缓冲子层使用的气体流量比例为O2∶HMDSO＜3∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为200～800W，时间为10～50min。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种薄膜封装方法，其包括如下步骤：在TFT基板上形成OLED层；在OLED层上形成第一无机封装层；在第一无机封装层上形成偶联剂单元；在偶联剂单元上形成有机封装层；其中，有机封装层包括依次形成于偶联剂单元上的缓冲子层和阻挡子层，偶联剂单元与第一无机封装层、缓冲子层发生化学反应以提高第一无机封装层与有机封装层之间的粘合强度。
其中，偶联剂单元成份的化学通式为Y(CH)nX3，其中，X为可水解的基团，水解时生成硅醇，且X与无机物质结合生成硅氧烷；n为正整数，数值范围为0～3；Y为有机官能团，与高分子聚合物发生化学反应生成氢键。
其中，X为甲氧基、氯基、乙氧基、乙酰氧基或甲氧基乙氧，Y为乙烯基、氨基、甲基丙烯酰氧基、巯基或脲基。
其中，有机封装层的化学通式为SiOxCyHz，厚度为1000nm～5000nm。
其中，缓冲子层通过等离子体增强化学气相沉积法沉积形成于偶联剂单元上，沉积缓冲子层使用的气体流量比例为O2∶HMDSO＜3∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为200～800W，时间为10～50min。
其中，阻挡子层通过等离子体增强化学气相沉积法沉积形成于缓冲子层上，沉积缓冲子层使用的气体流量比例为3∶1＜O2∶HMDSO＜18∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为 200～800W，沉积时间为＜2min，沉积厚度为10～50nm。
其中，第一无机封装层成份为SiO2，第一无机封装层通过等离子体增强化学气相沉积法沉积形成，沉积第一无机封装层使用的气体流量比例为N2O∶SiH4＞2∶1，其中，SiH4的射频功率为10～100W，SiH4的流量为10～50sccm，N2O的射频功率为10～100W，沉积时间为10～20min，沉积厚度为10～50nm。
其中，第一无机封装层成份为SiNx，第一无机封装层通过等离子体增强化学气相沉积法沉积形成，沉积第一无机封装层使用的气体流量比例为(N2+NH3)∶SiH4＞2∶1，其中，SiH4的射频功率为10～100W，SiH4的流量为10～50sccm，N2的射频功率为10～100W，NH3的射频功率为10～100W，沉积时间为10～20min，沉积厚度为10～50nm。
其中，第一无机封装层成份为SiONx，第一无机封装层通过等离子体增强化学气相沉积法沉积形成，沉积第一无机封装层使用的气体流量比例为(N2+NH3+NO2)∶SiH4＞2∶1，其中，SiH4的射频功率为10～100W，SiH4的流量为10～50sccm，N2的射频功率为10～100W，NH3的射频功率为10～100W，沉积时间为10～20min，沉积厚度为10～50nm。
其中，在偶联剂单元形成有机封装层的步骤之后还包括：在有机封装层上形成第二无机封装层。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种有机发光装置，其有机发光装置包括：TFT基板、OLED层、第一无机封装层、偶联剂单元以及有机封装层，OLED层设于TFT基板上；第一无机封装层层叠于OLED层上；偶联剂单元设于第一无机封装层上；有机封装层设于偶联剂单元上；其中，有机封装层具有依次层叠的缓冲子层和阻挡子层，偶联剂单元与第一无机封装层、缓冲子层发生化学反应以提高第一无机封装层与有机封装层之间的粘合强度。
其中，偶联剂单元主要成份的化学通式为Y(CH)nX3，其中，X为可水解的基团，水解时生成硅醇，且X与无机物质结合生成硅氧烷；n为正整数，数值 范围为0～3；Y为有机官能团，与高分子聚合物发生化学反应生成氢键。
其中，X为甲氧基、氯基、乙氧基、乙酰氧基或甲氧基乙氧，Y为乙烯基、氨基、甲基丙烯酰氧基、巯基或脲基。
其中，有机封装层的化学通式为SiOxCyHz，厚度为1000nm～5000nm。
其中，缓冲子层通过PECVD方法沉积形成于偶联剂单元上，沉积缓冲子层使用的气体流量比例为O2/HMDSO＜3∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为200～800W，时间为10～50min。
其中，阻挡子层通过PECVD方法沉积形成于缓冲子层上，沉积缓冲子层使用的气体流量比例为3∶1＜O2/HMDSO＜18∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为200～800W，沉积时间为＜2min，沉积厚度为10～50nm。
其中，第一无机封装层主要成份为SiO2，第一无机封装层通过PECVD方法沉积形成，沉积第一无机封装层使用的气体流量比例为N2O∶SiH4＞2∶1，其中，SiH4的射频功率为10～100W，SiH4的流量为10～50sccm，N2O的射频功率为10～100W，沉积时间为10～20min，沉积厚度为10～50nm。
其中，OLED层、第一无机封装层、偶联剂单元、缓冲子层以及阻挡子层依次层叠于TFT基板上。
其中，OLED层、第一无机封装层、缓冲子层以及阻挡子层依次层叠于TFT基板上，偶联剂单元裹覆于第一无机封装层与缓冲子层的外沿。
本发明的有益效果是：区别于现有技术的情况，本发明的有机发光装置及薄膜封装方法，在第一无机封装层与缓冲子层之间设置偶联剂单元以提高所述第一无机封装层与所述有机封装层之间的粘合强度，使之不易剥离，具有良好的水氧阻隔性。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所 需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，其中：
图1是本发明一实施例的薄膜封装方法的制作过程示意图；
图2是本发明另一实施例的薄膜封装方法的制作过程示意图；
图3是本发明另一实施例的薄膜封装方法的制作过程示意图；
图4是本发明一实施例有机发光装置的截面结构示意图；
图5是图4中有机发光装置的TFT基板结构示意图
图6是图4中有机发光装置的OLED层结构示意图；
图7是本发明另一实施例有机发光装置的截面结构示意图；
图7a是本发明另一实施例有机发光装置的截面结构示意图；
图8是本发明另一实施例有机发光装置的截面结构示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，均属于本发明保护的范围。
请参阅图1，图1是本发明一实施例的薄膜封装方法的制作过程示意图，本发明的薄膜封装方法具体包括如下步骤：
S10：在TFT(Thin Film Transistor，薄膜晶体管)基板上形成OLED层；
具体地，本实施例是通过真空蒸镀或喷墨打印等方法使OLED层层叠形成于TFT基板上，其中，使用喷墨打印方法时，OLED层在惰性氛围中完成，OLED层的水氧含量＜10ppm。
TFT基板包括柔性玻璃基板和形成于柔性玻璃基板的TFT，柔性玻璃基板是一种轻薄透明的玻璃，人们可以轻松将其压弯。TFT用于驱动OLED层。OLED层包括依次层叠形成于柔性玻璃基板上的正极子层、空穴传输子层、发光子层、电子传输子层以及金属阴极子层，其中，正极子层与电源正极电连接，金属阴 极子层与电源负极电连接。当电源供应至适当电压时，正极子层的空穴与阴极子层的电荷就会在发光子层中结合，产生光亮，依发光子层的成份不同产生红、绿以及蓝(RGB)三原色，构成基本色彩，以使得OLED层发出可见光。
S20：在OLED层上形成第一无机封装层；
第一无机封装层成份为SiO2，第一无机封装层通过等离子体增强化学气相沉积法沉积形成，沉积第一无机封装层使用的气体流量比例为N2O∶SiH4＞2∶1，其中，SiH4的射频功率为10～100W，SiH4的流量为10～50sccm，N2O的射频功率为10～100W，第一无机封装层的沉积时间为10～20min，沉积厚度为10～50nm，反应室气体压力为50～500Pa。
当然，在其它实施例中，第一无机封装层成份还可以为SiNx，第一无机封装层通过等离子体增强化学气相沉积法沉积形成，沉积第一无机封装层使用的气体流量比例为(N2+NH3)∶SiH4＞2∶1，其中，SiH4的射频功率为10～100W，SiH4的流量为10～50sccm，N2的射频功率为10～100W，NH3的射频功率为10～100W，第一无机封装层的沉积时间为10～20min，沉积厚度为10～50nm，反应室气体压力为50～500Pa。
当然，在其它实施例中，第一无机封装层成份为还可以为SiONx，第一无机封装层通过等离子体增强化学气相沉积法沉积形成，沉积第一无机封装层使用的气体流量比例为(N2+NH3+NO2)∶SiH4＞2∶1，其中，SiH4的射频功率为10～100W，SiH4的流量为10～50sccm，N2的射频功率为10～100W，NH3的射频功率为10～100W，第一无机封装层的沉积时间为10～20min，沉积厚度为10～50nm，反应室气体压力为50～500Pa。
S30：在第一无机封装层上形成偶联剂单元；
偶联剂单元成份的化学通式为Y(CH)nX3，其中，X为可水解的基团，水解时生成硅醇(Si(OH)3)，且X与无机物质结合生成硅氧烷；n为正整数，数值范围为0～3；Y为有机官能团，与高分子聚合物发生化学反应生成氢键并溶于其中。X可以为甲氧基、氯基、乙氧基、乙酰氧基或甲氧基乙氧，Y可以为乙烯 基、氨基、甲基丙烯酰氧基、巯基或脲基，其可以与有机物质反应。
偶联剂单元可通过真空蒸镀成膜或旋涂成膜等方法层叠形成于第一无机封装层上，若使用真空蒸镀方法形成偶联剂单元，那么TFT基板温度＜100℃，真空度要求为5×10E-5Pa。若使用旋涂成膜方法形成偶联剂单元，那么水氧含量控制在＜10ppm，且通过烘烤使之固化成膜，烘烤温度＜100℃。本实施例中的偶联剂单元的厚度＜100nm。
本实施例中的偶联剂单元的外沿与第一无机封装层的外沿平齐，当然，在其它实施例中，也可以是偶联剂单元的外沿比第一无机封装层的外沿大或小。
S40：在偶联剂单元上形成有机封装层；
有机封装层包括依次在偶联剂单元上形成的缓冲子层和阻挡子层，偶联剂单元与第一无机封装层、缓冲子层发生化学反应以提高第一无机封装层与有机封装层之间的粘合强度。其中，有机封装层的化学通式为SiOxCyHz，厚度为1000nm～5000nm。
缓冲子层以有机成分为主，其可以通过等离子体增强化学气相沉积法沉积形成于偶联剂单元上，沉积缓冲子层使用的气体流量比例为O2∶HMDSO(六甲基二硅氧烷)＜3∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为200～800W，缓冲子层的沉积时间为10～50min，反应室气体压力为30～200Pa。
阻挡子层以有机成分为主，例如SiO2等，其可以通过等离子体增强化学气相沉积法沉积形成于缓冲子层上，沉积缓冲子层使用的气体流量比例为3∶1＜O2∶HMDSO＜18∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为200～800W，阻挡子层的沉积时间为＜2min，沉积厚度为10～50nm，反应室气体压力为30～200Pa。
本实施例中的缓冲子层层叠于偶联剂单元上，缓冲子层的外沿与偶联剂单元的外沿平齐，当然，在其它实施例中，也可以是缓冲子层的外沿比偶联剂单元的外沿大或小。
S50：在有机封装层上形成第二无机封装层。
第二无机封装层层叠形成于有机封装层上，且裹覆于有机封装层、偶联剂单元、第一无机封装层以及OLED层的外沿。
在其它实施例中，S50步骤之后可重复S10-50步骤，以形成多个薄膜封装装置。
本实施例中的偶联剂单元(Y(CH)nX3)分子结构具有两不同化学性质官能团，即为可水解的基团X、有机官能团Y，X基团为亲无机物的基团，易与无机物表面起化学反应；Y基团为亲有机物的基团，能与高分子聚合物发生化学反应或生成氢键溶于其中，X基团与第一无机封装层发生化学反应，Y基团与缓冲子层发生化学反应，从而以改善无机物与有机物之间的界面作用，增强无机层与有机层的粘附性。
值得说明的是，本发明在离子体增强化学气相沉积法形成有机封装层过程中，通过控制氧化剂(即，O2与HMDSO)的含量，一方面，使缓冲子层与偶联剂接触部分保持缓冲性质，包裹杂质小颗粒，填充第一无机封装层产生的小孔洞，能降低膜层应力，实现平坦化等功能，且可增加柔性玻璃基板的可弯次数等作用；另一方面，使缓冲子层在与下一层第一无机封装层接触的部分更接近无机的性质，以此提高其与第一无机封装层的粘附性。
请参阅图2，图2是本发明另一实施例的薄膜封装方法的制作过程示意图，本实施例与上述实施例大体相同，不同的是偶联剂单元的形成位置，本实施例中的薄膜封装方法具体包括如下步骤：
S10’：在TFT基板上形成OLED层；
S20’：在OLED层上形成第一无机封装层；
本实施例中的第一无机封装层层叠形成于OLED层上，并裹覆OLED层的外沿。
S30’：在第一无机封装层的外沿上形成第一偶联剂子单元；
本实施例的第一偶联剂子单元不是层叠形成于第一无机封装层，而是形成 于第一无机封装层的外沿。
S40’：在第一无机封装层上形成有机封装层；
本实施例的有机封装层包括依次层叠形成于第一无机封装层上的缓冲子层和阻挡子层；
S41：在缓冲子层的外沿形成第二偶联剂子单元；
第二偶联剂子单元形成于缓冲子层的外沿并由上至下延伸至第一偶联剂子单元以与第一偶联剂子单元形成一体。第一偶联剂子单元、第二偶联剂子单元分别与第一无机封装层、缓冲子层发生化学反应以提高第一无机封装层与缓冲子层之间的粘合强度。
S50’：在有机封装层上形成第二无机封装层。
请参阅图3，图3是本发明另一实施例的薄膜封装方法的制作过程示意图，本实施例与上述实施例大体相同，不同的是偶联剂单元的形成位置，本实施例中的薄膜封装方法具体包括如下步骤：
S10”：在TFT基板上形成OLED层；
S20”：在OLED层上形成第一无机封装层；
S30”：在第一无机封装层上形成有机封装层，有机封装层包括依次层叠形成于第一无机封装层上的缓冲子层和阻挡子层；
缓冲子层的外沿可以与第一无机封装层的外沿对齐，当然，在其它实施例中也可以是第一无机封装层的外沿比缓冲子层的外沿大，以使第一无机封装层的上表面形成有空余部。
S40”：在缓冲子层与第一无机封装层的外沿形成偶联剂单元。
本实施中的缓冲子层与第一无机封装层的外沿均裹覆偶联剂单元，偶联剂单元均与第一无机封装层、缓冲子层发生化学反应以提高第一无机封装层与有机封装层之间的粘合强度。当然，第一无机封装层的外沿比缓冲子层的外沿大时，偶联剂单元裹覆于第一无机封装层的外沿并延伸至空余部以使得第一无机封装层、缓冲子层均与偶联剂单元发生化学反应。
S50”：在有机封装层上形成第二无机封装层。
请参阅图4，图4是本发明一实施例有机发光装置的截面结构示意图，本发明还提供一种有机发光装置1，其通过上述的薄膜封装方法制成。
本发明的有机发光装置1包括TFT基板10、OLED层20、第一无机封装层30、偶联剂单元40以及有机封装层50。
OLED层20设于TFT基板10上，第一无机封装层30层叠于OLED层20上，偶联剂单元40层叠于第一无机封装层30上，有机封装层50设于偶联剂单元40上，其中，有机封装层50具有依次层叠于偶联剂单元40上的缓冲子层51和阻挡子层52，偶联剂单元40分别与第一无机封装层30、缓冲子层51发生化学反应以提高第一无机封装层30与有机封装层50之间的粘合强度。
请一并参阅图5，图5是图4中有机发光装置的TFT基板结构示意图。本实施例的OLED层20可以通过真空蒸镀或喷墨打印等方法层叠形成于TFT基板10上，其中，OLED层20的水氧含量＜10ppm。TFT基板10包括柔性玻璃基板11和设于柔性玻璃基板11的TFT 12，柔性玻璃基板11是一种轻薄透明的玻璃，人们可以轻松将其压弯。TFT 12用于驱动OLED层。
请一并参阅图6，图6是图4中有机发光装置1的OLED层结构示意图。OLED层20包括依次层叠于柔性玻璃基板11上的正极子层21、空穴传输子层22、发光子层23、电子传输子层24以及金属阴极子层25，其中，正极子层21与电源26正极电连接，金属阴极子层25与电源26负极电连接。当电源26供应至适当电压时，正极子层21的空穴与阴极子层的电荷就会在发光子层23中结合，产生光亮，依其配方不同产生红、绿和蓝RGB三原色，构成基本色彩，以使得OLED层20发光。
本实施例中的第一无机封装层30成份为SiO2，第一无机封装层30通过等离子体增强化学气相沉积法沉积形成，沉积第一无机封装层30使用的气体流量比例为N2O∶SiH4＞2∶1，其中，SiH4的射频功率为10～100W，SiH4的流量为 10～50sccm，N2O的射频功率为10～100W，第一无机封装层30的沉积时间为10～20min，沉积厚度为10～50nm，反应室气体压力为50～500Pa。
当然，在其它实施例中，第一无机封装层30成份还可以为SiNx，第一无机封装层30通过等离子体增强化学气相沉积法沉积形成，沉积第一无机封装层30使用的气体流量比例为(N2+NH3)∶SiH4＞2∶1，其中，SiH4的射频功率为10～100W，SiH4的流量为10～50sccm，N2的射频功率为10～100W，NH3的射频功率为10～100W，第一无机封装层30的沉积时间为10～20min，沉积厚度为10～50nm，反应室气体压力为50～500Pa。
当然，第一无机封装层30成份为还可以为SiONx，第一无机封装层30通过等离子体增强化学气相沉积法沉积形成，沉积第一无机封装层30使用的气体流量比例为(N2+NH3+NO2)∶SiH4＞2∶1，其中，SiH4的射频功率为10～100W，SiH4的流量为10～50sccm，N2的射频功率为10～100W，NH3的射频功率为10～100W，第一无机封装层30的沉积时间为10～20min，沉积厚度为10～50nm，反应室气体压力为50～500Pa。
本实施例中的偶联剂单元40成份的化学通式为Y(CH)nX3，其中，X为可水解的基团，水解时生成硅醇(Si(OH)3)，且X与无机物质结合生成硅氧烷；n为正整数，数值范围为0～3；Y为有机官能团，与高分子聚合物发生化学反应生成氢键并溶于其中。X可以为甲氧基、氯基、乙氧基、乙酰氧基或甲氧基乙氧，Y可以为乙烯基、氨基、甲基丙烯酰氧基、巯基或脲基，其可以与有机物质反应。
偶联剂单元可通过真空蒸镀成膜或旋涂成膜等方法层叠形成于第一无机封装层上，若使用真空蒸镀方法形成偶联剂单元，那么TFT基板温度＜100℃，真空度要求为5×10E-5Pa。若使用旋涂成膜方法形成偶联剂单元，那么水氧含量控制在＜10ppm，且通过烘烤使之固化成膜，烘烤温度＜100℃。本实施例中的偶联剂单元的厚度＜100nm。
本实施例中的偶联剂单元40层叠于第一无机封装层30上，偶联剂单元40 的轮廓与第一无机封装层30的轮廓相同，即偶联剂单元40的外沿与第一无机封装层30的外沿平齐，当然，在其它实施例中，偶联剂单元40的外沿比第一无机封装层30的外沿大或小。
有机封装层50包括依次形成于偶联剂单元40上的缓冲子层51和阻挡子层52，偶联剂单元40与第一无机封装层30、缓冲子层51发生化学反应以提高第一无机封装层30与有机封装层50之间的粘合强度。其中，有机封装层50的化学通式为SiOxCyHz，厚度为1000nm～5000nm。
缓冲子层51通过等离子体增强化学气相沉积法沉积形成于偶联剂单元40上，沉积缓冲子层51使用的气体流量比例为O2/HMDSO＜3∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为200～800W，时间为10～50min，反应室气体压力为30～200Pa。
阻挡子层52通过等离子体增强化学气相沉积法沉积形成于缓冲子层51上，沉积缓冲子层51使用的气体流量比例为3∶1＜O2/HMDSO＜18∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为200～800W，沉积时间为＜2min，沉积厚度为10～50nm，反应室气体压力为30～200Pa。
本实施例中的缓冲子层51的轮廓与偶联剂单元40的轮廓相同，当然，在其它实施例中，缓冲子层51的外表面面积比偶联剂单元40的外表面面积大或小。
在其它实施例中，有机发光装置1还可进一步包括层叠于机封装层上的第二无机封装层60，并裹覆于有机封装层50、偶联剂单元40、第一无机封装层30以及OLED层20的外沿。
请参阅图7，图7是本发明另一实施例有机发光装置的截面结构示意图，本实施例与上述实施例大体相同，不同的是偶联剂单元40的设置位置。
本实施例中的有机发光装置1包括偶联剂单元40和依次层叠于TFT基板10上的OLED层20、第一无机封装层30、缓冲子层51以及阻挡子层52。
本实施例的偶联剂单元40包括第一偶联剂子单元41和第二偶联剂子单元42，第一偶联剂子单元41裹覆于第一无机封装层30的外沿，第二偶联剂子单元42裹覆于缓冲子层51的外沿，且第二偶联剂子单元42与第二偶联剂子单元42一体成型。第一偶联剂子单元41、第二偶联剂子单元42分别与第一无机封装层30、缓冲子层51发生化学反应以提高第一无机封装层30与有机封装层50之间的粘合强度。值得说明的是本实施例中的第一无机封装层30层叠于OLED层20上，并裹覆于OLED层20的外沿。
缓冲子层51的下表面面积可以与第一无机封装层30的上表面面积相同，即缓冲子层51的外沿与第一无机封装层30的外沿对齐。当然，在其它实施例中如图7a所示，其也可以是缓冲子层51的下表面面积比第一无机封装层30的上表面面积小，以使第一无机封装层30的上表面形成空余部311。此时，偶联剂单元40裹覆于第一无机封装层30的外沿并延伸至空余部311以使得第一无机封装层30、缓冲子层51均与偶联剂单元40发生化学反应。
请参阅图8，图8是本发明另一实施例有机发光装置的截面结构示意图，本实施例与上述实施例大体相同，不同的是偶联剂单元40的设置位置。
本实施例中的有机发光装置1包括偶联剂单元40和依次层叠于TFT基板10上的OLED层20、第一无机封装层30、缓冲子层51以及阻挡子层52。
第一无机封装层30具有锥台部31和裹覆部32，锥台部31呈锥台状，缓冲子层51呈倒立的锥台状，换句话而言，锥台部31与缓冲子层51形成两端大中间小的沙漏状。具体地，锥台部31包括第一上平面33、第一下平面34以及第一斜面35。第一上平面33与第一下平面34间隔平行设置，第一斜面35由第一上平面33的外沿延伸至第一下平面34的外沿，其中，第一上平面33的面积比第一下平面34小，以使第一斜面35与第一下平面34形成的夹角为锐角。缓冲子层51包括第二上平面511、第二下平面512以及第二斜面513。第二上平面511与第二下平面512间隔平行设置，第二斜面513由第二上平面511的外沿延伸至第二下平面512的外沿，其中，第二上平面511的面积比第二下平面512 小，以使第二斜面513与第二下平面512形成的夹角为钝角。第一斜面35与第二斜面513形成一凹槽，偶联剂单元40设于该凹槽中，其中，偶联剂单元40均与第一斜面35、第二斜面513发生化学反应，以提高第一无机封装层30与有机封装层50之间的粘合强度。
本发明还提供一种显示装置，其包括上述至少一个以上的有机发光装置1。
本发明的薄膜封装方法及有机发光装置1，在第一无机封装层30与缓冲子层51之间设置偶联剂单元40以提高所述第一无机封装层30与所述有机封装层50之间的粘合强度，使之不易剥离，具有良好的水氧阻隔性。
需要指出的是，在本发明一实施例中提到的“第一”、“第二”“上”、“下”、“左”、“右”等用语仅是根据需要采用的文字符号，在实务中并不限于此，并且该文字符号可以互换使用。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (20)

  1. 一种薄膜封装方法，其中，包括如下步骤：
    在TFT基板上形成OLED层；
    在所述OLED层上形成第一无机封装层；
    在所述第一无机封装层上形成偶联剂单元；
    在所述偶联剂单元上形成有机封装层；其中，所述有机封装层包括依次形成于所述偶联剂单元上的缓冲子层和阻挡子层，所述偶联剂单元与所述第一无机封装层、缓冲子层发生化学反应以提高所述第一无机封装层与所述有机封装层之间的粘合强度；
    所述偶联剂单元成份的化学通式为Y(CH)nX3，其中，X为可水解的基团，水解时生成硅醇，且X与无机物质结合生成硅氧烷；n为正整数，数值范围为0～3；Y为有机官能团，与高分子聚合物发生化学反应生成氢键；
    所述有机封装层的化学通式为SiOxCyHz，厚度为1000nm～5000nm；
    所述缓冲子层通过等离子体增强化学气相沉积法沉积形成于所述偶联剂单元上，沉积所述缓冲子层使用的气体流量比例为O2∶HMDSO＜3∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为200～800W，时间为10～50min。
  2. 一种薄膜封装方法，其中，包括如下步骤：
    在TFT基板上形成OLED层；
    在所述OLED层上形成第一无机封装层；
    在所述第一无机封装层上形成偶联剂单元；
    在所述偶联剂单元上形成有机封装层；其中，所述有机封装层包括依次形成于所述偶联剂单元上的缓冲子层和阻挡子层，所述偶联剂单元与所述第一无机封装层、缓冲子层发生化学反应以提高所述第一无机封装层与所述有机封装层之间的粘合强度。
  3. 根据权利要求1所述的薄膜封装方法，其中，所述偶联剂单元成份的化学通式为Y(CH)nX3，其中，X为可水解的基团，水解时生成硅醇，且X与无机物质结合生成硅氧烷；n为正整数，数值范围为0～3；Y为有机官能团，与高分子聚合物发生化学反应生成氢键。
  4. 根据权利要求3所述的薄膜封装方法，其中，X为甲氧基、氯基、乙氧基、乙酰氧基或甲氧基乙氧，Y为乙烯基、氨基、甲基丙烯酰氧基、巯基或脲基。
  5. 根据权利要求2所述的薄膜封装方法，其中，所述有机封装层的化学通式为SiOxCyHz，厚度为1000nm～5000nm。
  6. 根据权利要求5所述的薄膜封装方法，其中，所述缓冲子层通过等离子体增强化学气相沉积法沉积形成于所述偶联剂单元上，沉积所述缓冲子层使用的气体流量比例为O2∶HMDSO＜3∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为200～800W，时间为10～50min。
  7. 根据权利要求6所述的薄膜封装方法，其中，所述阻挡子层通过等离子体增强化学气相沉积法沉积形成于所述缓冲子层上，沉积所述缓冲子层使用的气体流量比例为3∶1＜O2∶HMDSO＜18∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为200～800W，沉积时间为＜2min，沉积厚度为10～50nm。
  8. 根据权利要求2所述的薄膜封装方法，其中，所述第一无机封装层成份为SiO2，所述第一无机封装层通过等离子体增强化学气相沉积法沉积形成，沉积所述第一无机封装层使用的气体流量比例为N2O∶SiH4＞2∶1，其中，SiH4的射频功率为10～100W，SiH4的流量为10～50sccm，N2O的射频功率为10～100W，沉积时间为10～20min，沉积厚度为10～50nm。
  9. 根据权利要求2所述的薄膜封装方法，其中，所述第一无机封装层成份为SiNx，所述第一无机封装层通过等离子体增强化学气相沉积法沉积形成，沉积所述第一无机封装层使用的气体流量比例为(N2+NH3)∶SiH4＞2∶1，其中，SiH4的射频功率为10～100W，SiH4的流量为10～50sccm，N2的射频功率为10～100W，NH3的射频功率为10～100W，沉积时间为10～20min，沉积厚度为10～50nm。
  10. 根据权利要求2所述的薄膜封装方法，其中，所述第一无机封装层成份为SiONx，所述第一无机封装层通过等离子体增强化学气相沉积法沉积形成，沉积所述第一无机封装层使用的气体流量比例为(N2+NH3+NO2)∶SiH4＞2∶1，其中，SiH4的射频功率为10～100W，SiH4的流量为10～50sccm，N2的射频功率为10～100W，NH3的射频功率为10～100W，沉积时间为10～20min，沉积厚度为10～50nm。
  11. 根据权利要求2所述的薄膜封装方法，其中，所述在所述偶联剂单元 形成有机封装层的步骤之后还包括：
    在有机封装层上形成第二无机封装层。
  12. 一种有机发光装置，其中，所述有机发光装置包括：
    TFT基板；
    OLED层，设于所述TFT基板上；
    第一无机封装层，层叠于所述OLED层上；
    偶联剂单元，设于所述第一无机封装层上；
    有机封装层，设于所述偶联剂单元上；其中，所述有机封装层具有依次层叠的缓冲子层和阻挡子层，所述偶联剂单元与所述第一无机封装层、缓冲子层发生化学反应以提高所述第一无机封装层与所述有机封装层之间的粘合强度。
  13. 根据权利要求12所述的有机发光装置，其中，所述偶联剂单元主要成份的化学通式为Y(CH)nX3，其中，X为可水解的基团，水解时生成硅醇，且X与无机物质结合生成硅氧烷；n为正整数，数值范围为0～3；Y为有机官能团，与高分子聚合物发生化学反应生成氢键。
  14. 根据权利要求13所述的有机发光装置，其中，X为甲氧基、氯基、乙氧基、乙酰氧基或甲氧基乙氧，Y为乙烯基、氨基、甲基丙烯酰氧基、巯基或脲基。
  15. 根据权利要求13所述的有机发光装置，其中，所述有机封装层的化学通式为SiOxCyHz，厚度为1000nm～5000nm。
  16. 根据权利要求15所述的有机发光装置，其中，所述缓冲子层通过PECVD方法沉积形成于所述偶联剂单元上，沉积所述缓冲子层使用的气体流量比例为O2/HMDSO＜3∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为200～800W，时间为10～50min。
  17. 根据权利要求16所述的有机发光装置，其中，所述阻挡子层通过PECVD方法沉积形成于所述缓冲子层上，沉积所述缓冲子层使用的气体流量比例为3∶1＜O2/HMDSO＜18∶1，其中，HMDSO的射频功率为200～800W，HMDSO的流量为10～50sccm，O2的射频功率为200～800W，沉积时间为＜2min，沉积厚度为10～50nm。
  18. 根据权利要求12所述的有机发光装置，其中，所述第一无机封装层主要成份为SiO2，所述第一无机封装层通过PECVD方法沉积形成，沉积所述第一无机封装层使用的气体流量比例为N2O∶SiH4＞2∶1，其中，SiH4的射频功率为 10～100W，SiH4的流量为10～50sccm，N2O的射频功率为10～100W，沉积时间为10～20min，沉积厚度为10～50nm。
  19. 根据权利要求12所述的有机发光装置，其中，所述OLED层、所述第一无机封装层、所述偶联剂单元、所述缓冲子层以及所述阻挡子层依次层叠于所述TFT基板上。
  20. 根据权利要求12所述的有机发光装置，其中，所述OLED层、所述第一无机封装层、所述缓冲子层以及所述阻挡子层依次层叠于所述TFT基板上，所述偶联剂单元裹覆于所述第一无机封装层与所述缓冲子层的外沿。
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Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI562296B (en) * 2015-12-07 2016-12-11 Ind Tech Res Inst Composite barrier layer and manufacturing method thereof
CN105609655B (zh) * 2015-12-28 2018-06-12 天马微电子股份有限公司 有机发光显示面板的制作方法
CN105549282A (zh) * 2016-01-07 2016-05-04 武汉华星光电技术有限公司 透明显示器
CN106711354A (zh) * 2016-12-02 2017-05-24 武汉华星光电技术有限公司 有机半导体器件的封装方法
CN106784372A (zh) 2016-12-26 2017-05-31 武汉华星光电技术有限公司 一种oled薄膜封装结构及方法
CN106876607B (zh) 2017-03-21 2019-07-26 京东方科技集团股份有限公司 一种薄膜封装结构、薄膜封装方法及显示装置
CN107104199A (zh) * 2017-04-19 2017-08-29 武汉华星光电技术有限公司 显示面板及其制造方法
CN107123744B (zh) * 2017-04-27 2019-04-19 京东方科技集团股份有限公司 一种封装结构、显示装置及照明装置
CN106953031B (zh) 2017-05-16 2018-11-09 武汉华星光电技术有限公司 一种柔性有机发光二极管显示器及其制作方法
CN107452891A (zh) * 2017-05-22 2017-12-08 茆胜 兼具柔性和耐磨性能的oled封装结构及封装方法
US10353123B2 (en) * 2017-08-08 2019-07-16 Apple Inc. Electronic Devices with glass layer coatings
CN107403883A (zh) * 2017-09-13 2017-11-28 武汉华星光电半导体显示技术有限公司 Oled显示面板的封装方法
CN107658388B (zh) 2017-09-27 2020-03-06 京东方科技集团股份有限公司 Oled显示面板及其制备方法和显示装置
CN109935615B (zh) * 2017-12-15 2021-02-26 京东方科技集团股份有限公司 基板及其制备方法、显示面板
CN108258144A (zh) * 2018-01-15 2018-07-06 京东方科技集团股份有限公司 封装结构及其制作方法、显示面板
CN108539057B (zh) * 2018-05-16 2019-07-02 深圳市华星光电技术有限公司 Oled封装方法及oled封装结构
CN108963104A (zh) * 2018-07-02 2018-12-07 武汉华星光电半导体显示技术有限公司 一种oled显示面板及其封装方法
CN109004103B (zh) * 2018-07-18 2020-10-02 深圳市华星光电技术有限公司 阵列基板及阵列基板的制作方法
CN109037447B (zh) * 2018-07-24 2022-10-18 云谷（固安）科技有限公司 显示屏及显示装置
CN109755409B (zh) * 2019-01-10 2021-03-23 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
CN110164308A (zh) * 2019-05-23 2019-08-23 京东方科技集团股份有限公司 一种封装方法及封装结构
CN110459565A (zh) * 2019-08-01 2019-11-15 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法
CN110767730A (zh) * 2019-10-31 2020-02-07 云谷（固安）科技有限公司 显示面板及其制备方法、显示装置
CN110943182A (zh) 2019-11-22 2020-03-31 武汉华星光电半导体显示技术有限公司 有机电致发光器件
CN111403618A (zh) * 2020-03-20 2020-07-10 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置
CN113764598A (zh) * 2020-06-03 2021-12-07 咸阳彩虹光电科技有限公司 一种薄膜封装结构、oled显示面板及显示器
CN111799391B (zh) * 2020-06-04 2023-02-07 武汉天马微电子有限公司 封装结构、显示面板及封装方法
NL2028250B1 (en) * 2021-05-19 2022-12-06 Microsoft Technology Licensing Llc Active strain management in a layered article
CN115483252B (zh) * 2021-06-16 2026-04-17 华为技术有限公司 显示装置及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102593371A (zh) * 2012-03-16 2012-07-18 四川长虹电器股份有限公司 有机电致发光器件的封装结构
CN103633248A (zh) * 2012-08-24 2014-03-12 财团法人工业技术研究院 非连续复合阻挡层、其形成方法及包含其的封装结构
US20140246655A1 (en) * 2013-03-04 2014-09-04 Applied Materials, Inc. Fluorine-containing plasma polymerized hmdso for oled thin film encapsulation
WO2015047055A1 (ko) * 2013-09-30 2015-04-02 주식회사 엘지화학 유기전자소자용 기판

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0719777B2 (ja) * 1990-08-10 1995-03-06 株式会社半導体プロセス研究所 半導体装置の製造方法
JP4324718B2 (ja) * 2000-05-30 2009-09-02 カシオ計算機株式会社 電界発光素子
JP3516941B2 (ja) * 2000-11-30 2004-04-05 キヤノン販売株式会社 半導体装置及びその製造方法
US7230271B2 (en) * 2002-06-11 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising film having hygroscopic property and transparency and manufacturing method thereof
US7279239B2 (en) * 2002-08-07 2007-10-09 Kabushiki Kaisha Toyota Chuo Kenkyusho Laminating product including adhesion layer and laminate product including protective film
US20040229051A1 (en) * 2003-05-15 2004-11-18 General Electric Company Multilayer coating package on flexible substrates for electro-optical devices
TW582186B (en) * 2003-01-29 2004-04-01 Au Optronics Corp Method of fabricating organic light emitting display with passivation structure
TWI407535B (zh) * 2009-09-15 2013-09-01 Ind Tech Res Inst 環境敏感電子元件之封裝體
JP5795825B2 (ja) * 2012-08-17 2015-10-14 富士フイルム株式会社 機能性フィルムおよび有機ｅｌデバイス
KR101996436B1 (ko) * 2013-02-14 2019-07-05 삼성디스플레이 주식회사 박막 봉지 구조를 갖는 유기 전계 발광 소자 및 그 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102593371A (zh) * 2012-03-16 2012-07-18 四川长虹电器股份有限公司 有机电致发光器件的封装结构
CN103633248A (zh) * 2012-08-24 2014-03-12 财团法人工业技术研究院 非连续复合阻挡层、其形成方法及包含其的封装结构
US20140246655A1 (en) * 2013-03-04 2014-09-04 Applied Materials, Inc. Fluorine-containing plasma polymerized hmdso for oled thin film encapsulation
WO2015047055A1 (ko) * 2013-09-30 2015-04-02 주식회사 엘지화학 유기전자소자용 기판

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