WO2017026742A1 - 복합 가공 방법을 이용한 섀도우 마스크의 제조방법 및 이에 의해 제조된 섀도우 마스크 - Google Patents
복합 가공 방법을 이용한 섀도우 마스크의 제조방법 및 이에 의해 제조된 섀도우 마스크 Download PDFInfo
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- WO2017026742A1 WO2017026742A1 PCT/KR2016/008600 KR2016008600W WO2017026742A1 WO 2017026742 A1 WO2017026742 A1 WO 2017026742A1 KR 2016008600 W KR2016008600 W KR 2016008600W WO 2017026742 A1 WO2017026742 A1 WO 2017026742A1
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- processing
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
- 238000003672 processing method Methods 0.000 title claims abstract description 36
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- 238000001039 wet etching Methods 0.000 claims abstract description 110
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- 238000005530 etching Methods 0.000 claims description 29
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/162—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using laser ablation
Definitions
- the present invention relates to a method for manufacturing a metal shadow mask and a shadow mask produced by the same, a composite of a mask pattern consisting of a laser processing pattern and a wet etching pattern by using a combination of a laser processing method and a wet etching method It relates to a method of manufacturing a shadow mask using a processing method and a shadow mask produced thereby.
- a metal mask is used in a vacuum deposition process or the like in the manufacture of an organic EL or an organic semiconductor device.
- the metal mask has a plurality of circular holes or a tapered three-dimensional hole structure.
- the mask is aligned with a substrate, and a light emitting layer having a desired pattern is deposited on a specific region on the substrate to manufacture a semiconductor device such as an organic EL. will be.
- the photoresist (2) is coated on both sides of the metal film (1).
- the photoresist 2 layer is selectively exposed to light using a pattern of a glass mask (or quartz mask) 3.
- Filled Fill the top surface with a portion of the metal film removed by wet etching with anti-etching packing material.
- the filling of the anti-etching packing material is for preserving the shape of the upper surface of the metal film formed by 1st etching when performing etching on the lower surface.
- the above process lists a typical procedure for manufacturing a metal shadow mask by wet etching, and various modified processes have been developed and applied based on this procedure.
- the "5. Filled” process may be omitted, or both sides may be etched simultaneously.
- the metal mask is made through the chemical wet etching process described in FIG.
- wet etching is characterized as having isotropy as shown in FIG. That is, since the etchant from the opening of the photoresist acts in the same strength in all directions and removes the metal material, the cross-sectional shape of the metal material left after the etching is formed in a semicircular shape as shown in FIG. Therefore, the finally formed metal mask includes a periphery of a very thin opening (refer to the red display area).
- the thin thickness around the opening serves as an adverse factor in ensuring precisely and stably the size and shape of the opening.
- the general metal mask performs both etching on both surfaces as shown in FIG. 3 without performing wet etching on only one surface (upper surface or lower surface) from the metal film.
- Wet etching on both sides is performed in various ways as described in the prior art US5348825, US5552662, and the like.
- the tapered shape is formed by the isotropic nature of the wet etching, the tapered shape is inevitably formed only in the form of under-cut.
- FIG. 4 illustrates an isotropic shape of wet etching, and the equation (1) for correlation between each shape factor (A, B, D, E, T, pitch, and etching factors) is shown. (2) and (3).
- PR width (A) cannot be made infinitely small. This is because a very small PR width generally has limitations in implementation due to the characteristics formed by the exposure process, and even if it is implemented, it acts as a factor that lowers the etching performance.
- the depth (D) value also has a limit on setting it to a small value. Because the double-sided etching method is assumed, the smaller the depth (D) is, the larger the size of the undercut becomes, which causes the organic light emitting material not to be uniformly deposited on the substrate. However, reducing the thickness T of the metal mask also has limitations in terms of handling of the metal sheet.
- the reason for another aspect that is difficult to implement high resolution only by wet etching can be found in the plan view shape of the microstructure.
- the isotropy of wet etching is characterized not only in the cross-sectional shape but also in the plan view. As shown in Fig. 5, since the processed shape is a bowl shape in 3D, the four corners are not sharply angled and rounded in the plan view. round) shape. This feature makes it difficult to meet the demands of high resolution such as QHD or UHD, especially for display applications requiring sharp rectangular or polygonal deposition areas.
- the second investigation step is to investigate the same location.
- a plurality of pulses are accumulated at low intensity conditions using an ultra-short pulse laser to perform progressive removal or processing of metal materials.
- the greatest advantage of this method is that it is possible to specify the intensity or energy distribution of the laser irradiated onto the metal material by constructing a specific optical system or changing the intensity or pulse modulation of the laser with it.
- the optical system may be configured to have a specific energy distribution and the relative movement of the laser and the substrate may be controlled to manufacture a metal tape having a proper taper-like shape without an undercut or the like (see FIG. 7).
- the energy is continuously applied to the metal material in a pulse train from the laser to induce the gradual removal of the metal from the surface of the material.
- the processing speed increases, but the metal material does not sufficiently release heat and accumulates, resulting in a decrease in processing quality.
- a method of machining a little bit over several shots with the minimum energy required for processing should be taken, which makes it difficult to secure sufficient productivity.
- the present invention is to solve the above problems, a method of manufacturing a shadow mask using a complex processing method that implements a mask pattern consisting of a laser processing pattern and a wet etching pattern by using a combination of a laser processing method and a wet etching method and It aims at providing the shadow mask manufactured by this.
- the present invention provides a method for manufacturing a shadow mask having a mask pattern, the laser processing step of forming a laser processing pattern on the base by irradiating a laser beam from the base side, and the laser processing pattern is Method of manufacturing a shadow mask using a complex processing method comprising a wet etching step of forming a wet etching pattern continuous to the laser processing pattern by performing wet etching on the upper or lower base formed Used shadow masks as a technical subject matter.
- the laser processing step may include a first step of setting a unit processing area on the base, and a laser beam moving along a first scan path starting at one boundary of the unit processing area, A second step of processing the laser processing pattern included in the unit processing region until the other boundary of the unit processing region is reached; and redirecting the laser beam to the next step,
- a fourth step in which processing is performed.
- the setting of the processing depth is based on the overlapping frequency of the scan path
- the depth of the laser beam is determined by setting the energy intensity for each of the scan paths and setting the energy intensity for each pulse of the laser source even in one scan path, or a combination thereof.
- the laser processing pattern by setting the 1, ..., n-th scan path and the 1, ..., m-th scan path perpendicular to the scan path.
- the setting of the energy accumulation distribution for each of the energy regions is preferably performed by a change in energy intensity for each overlapping number of the scan paths or for each pulse of a laser source that moves the scan paths.
- a tapered laser processing pattern may be set by sequentially setting an overlap frequency of the scan paths or sequentially setting energy intensities for each pulse of a laser source that moves the scan paths. It is preferable to form.
- the step pitch when changing the direction from the n-1 th scan path to the n th scan path is equal to or smaller than the size of the laser beam of the n-1 th scan path.
- the n-th scan path and the n-th scan path move the laser beam in the same direction or in the opposite direction.
- the photoresist pattern for forming the wet etching pattern may be formed above or below the base, and the wet etching of the base may be performed along the portion where the photoresist is removed.
- the wet etching step it is preferable to perform one side etching on the base in the same direction or the opposite direction as the laser processing, or perform sequential double side etching or simultaneous double side etching.
- the wet etching pattern by the wet etching may be continuously formed on the machining surface of the laser processing pattern by the laser processing, or continuously formed in the opposite direction to the machining surface of the laser processing pattern by the laser processing. desirable.
- the thickness of the wet etching pattern continuously formed in the direction opposite to the processing surface of the laser processing pattern by the laser processing is preferably formed to 40% or less of the total thickness of the base.
- the radius of curvature of the wet etching pattern processing surface has a value smaller than the processing depth of the wet etching pattern.
- the present invention in the manufacture of a shadow mask, by using a combination of laser processing and wet etching, the effect of solving the problem of productivity degradation due to the conventional laser processing process, it is possible to provide a high quality shadow mask by wet etching There is.
- most of the openings are formed by laser processing, and the energy level for each position is adjusted to reduce the radius of curvature of the wet etching pattern to the surface of the wet etching. Not only can be implemented, it can be adjusted to any value in the following values, there is an effect that can implement various types of openings.
- QHD about 500 ppi level
- UHD about 500 pixels or more
- FIG. 1 Figure 2-Schematic diagram of a shadow mask made by conventional wet etching.
- Fig. 5 is a plan view showing the isotropy of the shadow mask of the conventional wet etching.
- FIG. 7 is a photograph showing a shadow mask formed by conventional laser processing.
- the present invention relates to a method for manufacturing a metal shadow mask that can be used in a vacuum deposition process in the manufacture of organic EL, organic semiconductor devices, etc., comprising a laser processing pattern and a wet etching method in combination
- the present invention relates to a method of manufacturing a shadow mask in which a mask pattern consisting of a wet etching pattern is implemented.
- FIG. 8 is a schematic diagram of a shadow mask manufacturing method according to an embodiment of the present invention
- Figure 9 is a schematic diagram of a shadow mask manufacturing method according to another embodiment of the present invention
- Figures 10 to 16 the present invention
- a laser beam L is disposed on an upper side of the base 110. Irradiating the laser processing pattern to form the laser processing pattern 120 on the base 110 and performing wet etching on the upper or lower side of the base 110 on which the laser processing pattern 120 is formed. It characterized in that it comprises a wet etching step of forming a continuous wet etching pattern 130 on (120).
- the present invention intends to manufacture a shadow mask having a mask pattern formed of the laser processing pattern 120 and the wet etching pattern 130.
- the plurality of mask patterns formed on the shadow mask have a shape corresponding to the thin film pattern to be deposited on the substrate which is a deposition target, the mask pattern is a region through which the deposition material passes, and a plurality of masks among the regions of the base. Except for the region where the pattern is formed, the region is a blocking region where the deposition material does not pass.
- the shadow mask is formed of a blocking region, which is a region that blocks the raw material from passing through, and a plurality of mask patterns that are formed to be spaced apart from each other on the blocking region and allow the raw material to pass therethrough. Shape or arrangement is the pattern of the shadow mask.
- the present invention is for manufacturing a shadow mask having such a mask pattern, by using a combination of the laser processing method and wet etching method mask pattern consisting of a laser processing pattern by laser processing and a wet etching pattern by wet etching. It is intended to manufacture the implemented shadow mask.
- FIG. 8 is a view showing a method of manufacturing a shadow mask by the method according to an embodiment of the present invention, by irradiating a laser beam (L) above the base 110 (base upper surface), to the base 110
- the laser processing pattern 120 is formed by laser processing, and wet etching is continuously performed on the base 110 on which the laser processing pattern 120 is formed (the upper surface of the base) to form the wet etching pattern 130. .
- FIG. 9 is a view showing a method of manufacturing a shadow mask by a method according to another embodiment of the present invention, by irradiating a laser beam (L) to the upper side (base upper surface) of the base 110, to the base 110
- the laser processing pattern 120 may be formed by laser processing, and the wet etching pattern 130 may be formed by performing wet etching under the base 110 on which the laser processing pattern 120 is formed.
- the laser processing pattern 120 by the laser processing is preferably formed to narrow the inner diameter toward the lower side on the base (shaped like a taper), when the laser processing pattern 120 is completed,
- the wet etching pattern 130 is formed by performing wet etching in the same direction or in the opposite direction to the laser processing direction.
- the laser processing step is to form a laser processing pattern 120 on the base, which is to perform the shape processing for the microstructure of the shadow mask first.
- the laser processing step includes a first step of setting a unit processing area on the base, and a laser beam moving along a first scan path starting at one boundary of the unit processing area, wherein the unit A second step of processing the laser processing pattern included in the unit processing area until the other boundary of the processing area is reached; and after the processing of the second step, the laser beam is moved to the second scanning path In order to do this, the laser beam is diverted to the next step, and the third step and the second step and the third step of moving the laser beam by the step pitch are repeated to perform the laser along the nth scan path.
- the fourth step is largely performed to process the entire unit processing area.
- the laser processing pattern is processed in an intaglio form on the surface of the base
- the unit processing region in the present invention means a region in which the laser processing pattern can be formed on the base by one setting of the laser processing apparatus, or the experimenter
- a specific area on the base may be arbitrarily designated and set as the unit processing area.
- the unit processing region may include one or more laser processing patterns, and it is preferable to set a large size of the unit processing region in consideration of the processing speed.
- the unit processing region may be formed in singular or plural.
- the formation of the laser processing pattern continuous to the wet etching pattern is completed on the base.
- a unit processing area is set on the base (first step).
- the unit processing region may include a single or a plurality of laser processing patterns, and is set as a virtual region on the base.
- the length of the unit processing region refers to the length that the laser beam can move along one scan path without changing direction, and the width thereof is generally formed by the changed step pitch, which will be described later.
- the entire processing area of the laser processing pattern is included in the unit processing area, so that the entire processing is completed without dividing the processing area several times. This can eliminate the problem of stitching caused by dividing the workpiece into several partitions.
- the unit processing area equal to the size of the large area base, it is possible to process the large area base without stitching phenomenon.
- the laser beam starts at one boundary of the unit processing region and moves along the first scan path and is included in the unit processing region until it reaches the other boundary of the unit processing region. Processing of the laser processing pattern is performed (second step).
- the first scan path is set from one boundary of the unit processing region set on the base to the other boundary, and accordingly, the laser beam is moved and the machining of the part or the whole of the laser processing pattern included in the unit processing region is performed. It is done.
- the laser beam When the laser beam reaches the other boundary of the unit processing area while the laser beam moves along the first scan path, the laser beam is redirected to the next step, and the step pitch is increased by the step pitch. It moves to the second scan path (step 3).
- the laser when the laser beam reaches the other boundary of the unit processing area, the laser is turned off, the direction of the laser beam is switched, and the second scan path is moved after the set step pitch. Will be set. At this time, the laser is turned on again.
- the step pitch refers to a distance between adjacent scan paths.
- the step pitch is a distance between the first scan path and the second scan path and moves the second scan path from the center of the laser beam that moves the first scan path. It means the distance to the center of the laser beam.
- the first scan path and the second scan path may be in the same direction, or may be set in the opposite direction as shown in FIG. 10. That is, the moving direction of the laser beam may be set in the reverse direction. That is, the n-th scan path and the n-th scan path may be set to move the laser beam in the same direction or in the opposite direction, and the present invention is not limited thereto, and the plurality of scan paths may be set in a specific direction or in the opposite direction. And combinations thereof.
- the step pitch when changing the direction from the first scan path to the second scan path is formed to be equal to or smaller than the size of the laser beam of the first scan path, so that a uniform pattern is processed.
- the step pitch in the direction change from the n-1 th scan path to the n th scan path is equal to or smaller than the size of the laser beam of the n-1 th scan path.
- the n ⁇ 1 th scan pitch and the n th scan pitch may be set differently according to the shape of the laser processing pattern.
- the scan pitch v / f (v: relative speed of the base and the laser beam by the operation of the drive unit, f: pulse frequency of the laser source applied on the base), the relative speed and pulse frequency of the base and the pulsed laser beam In consideration of this, it means the interval between successive pulsed laser beams.
- This step pitch serves as a reference for setting an overlap rate of the laser beam, which will be described later. As the interval of the scan pitch is narrowed, the overlap rate of the laser beam increases, which affects the setting of the processing depth of the laser processing pattern. Get mad.
- step 4 the entire machining area is processed (step 4).
- the laser beam is moved along the set first scan path, and processing is performed on the laser processing pattern formed on the first scan path.
- the laser beam moves by the step pitch and moves along the second scan path to reach the boundary on the first unit processing area.
- the nth scan path is set, and when the movement of the laser beam is completed and reaches a boundary of the unit processing area, the processing for the laser processing pattern included in the unit processing area is completed. .
- the number of laser beam reorientations generated during machining can be significantly reduced (by shifting the scan path and turning and moving to the next step), and the machining is performed by repeating a relatively simple machining procedure. Productivity is improved.
- the present invention is to form a laser processing pattern on a base using a laser, and sets a unit processing area on the base, and sets a scan path in which a laser beam moves on the unit processing area.
- the unit processing area is processed to prevent heat energy from accumulating on the base, thereby protecting the base and forming a fine pattern.
- one laser processing pattern included in the processing area includes several scan paths, processing of all the scan paths included in the laser processing pattern is performed to complete the processing of one laser processing pattern.
- processing the pattern is made intermittently with a rest time to prevent the thermal energy is accumulated on the base, to protect the base and to form a fine laser processing pattern.
- the processing depth corresponding to each scan path when the laser beam is moved along the scan path, it is possible to set the processing depth corresponding to each scan path. That is, the machining depth of the first scan path may be set to a certain value, the machining depth of the second scan path may be set to another value, and the machining depth of the nth scan path may be different from each other or at the center of the scan path. It can also be set symmetrically. This can be set in various ways according to the shape of the laser processing pattern, the setting of the processing depth can be implemented by controlling the energy accumulation distribution of the laser beam.
- the setting of the processing depth according to the overlap ratio of the laser beam is a method of setting the relative speed of the beam differently for each scan path while fixing the pulse frequency value of the laser source unit, and fixing the relative speed value of the beam. For example, there is a method of setting pulse frequency values differently for each scan path.
- the degree of overlap of the laser beams is controlled to set the processing depth. As the processing depth of the laser processing pattern increases, the overlap rate of the laser beam increases.
- FIG. 11 is a schematic view of controlling the processing depth by the degree of overlap of the laser beam, and the laser beam pattern having a depth is formed by controlling the overlap ratio of the laser beam for each scan path.
- the setting of the processing depth may be controlled by the number of overlaps of the scan path. That is, the depth of processing of the laser processing pattern can be set by controlling the energy accumulation distribution depending on how many times the laser beam is moved on the same scan path.
- both the relative speed and the pulse frequency value of the laser beam are fixed (that is, the scan pitch is constant), and the number of overlapping scan paths is selectively set in the scan path in the unit processing area.
- FIG. 12 is a schematic diagram of controlling the processing depth by the overlapping number of scan paths, and forming the laser processing pattern having a depth by controlling the overlapping number of the laser beam for each scan path.
- the setting of the processing depth may be determined by setting an energy intensity for each scan path or setting an energy intensity for each pulse of a laser source even in one scan path or a combination of the two. That is, the depth of processing of the laser processing pattern can be set by controlling the energy accumulation distribution according to the control of the energy intensity of the laser beam on the same scan path.
- the energy intensity varies for each pulse of the laser source during the relative position movement along each scan path.
- the energy intensity is set differently for each scan path.
- FIG. 13 is a schematic diagram of controlling a processing depth by differently setting energy intensities for pulses of a laser source moving relative to each scan path, and controlling depth of energy of a laser beam along each scan path. It is to form a laser processing pattern.
- any one of the overlap rate of the laser beam traveling the scan path, the number of overlaps of the scan path, and the energy intensity of the laser beam moving the scan path, or two or more thereof May be determined by a combination.
- the laser processing pattern is formed by setting the first, ..., n-th scan path (first direction) and the first, ..., m-th scan path (second direction) perpendicular to the scan path. can do.
- the machining depths of the n-th scan path in the first direction in the first direction and the m-th scan path in the first and second directions in the second direction are equally set. In this way, the depth of cut is set for all remaining scan paths.
- route is set to the same or larger value.
- the machining depth is set in the same way for the remaining scan paths.
- a plurality of energy regions are set on the laser processing pattern region included in the unit processing region, and the energy accumulation distribution for each energy region is set in sequential intensity. It is also possible to set the tapered third processing depth.
- the energy accumulation distribution allocated to the second energy region is set to a value equal to or greater than the energy accumulation distribution allocated to the first energy region, and in such a manner, the allocation of energy accumulation to the remaining energy regions is sequential. It is set to a value.
- the energy cumulative distribution setting for each energy region is performed by the overlapping number of the scan paths or the change of the energy intensity of the laser beam moving along the scan paths.
- FIG. 15 illustrates a case in which an energy accumulation distribution for an energy region is controlled by the overlapping number of scan paths, and in a state in which a relative speed, pulse frequency, and pulse energy value of a fixed value laser beam are set, the first energy region A specific overlapping frequency of the scan path for the difference region of the second and second energy regions is set.
- the overlapping frequency is set to be greater than or equal to the overlapping frequency for the difference region of the second energy region and the third energy region, and the above-described energy accumulation distribution is controlled for all remaining energy regions to taper the laser processing pattern.
- FIG. 16 illustrates a case in which an energy accumulation distribution is controlled for each energy region by a change in energy intensity for each pulse of a laser source moving along the scan path, and the intensity level of pulse energy for each energy region is set to the same value. To set. That is, the pulse energy intensity of the same waveform is set for the first scan path and the nth scan path.
- the intensity of the energy is determined.
- the overlapping frequency of the scan path may be sequentially set, or the energy intensity may be sequentially set for each pulse of the laser source that moves the scan path, and the cumulative energy distribution may be set for each energy region.
- the present invention facilitates the formation of the laser processing pattern by setting the processing depth with respect to the scan path, and the formation of the tapered laser processing pattern through the control of the total cumulative distribution of energy for each specific scan path or energy region. It is to facilitate.
- a photoresist pattern for forming the wet etching pattern 130 is formed on the upper or lower side of the base, and the wet etching of the base is performed along the portion where the photoresist is removed. do.
- the wet etching step may not require a separate photoresist pattern forming process when the masking part is a photoresist as in the fourth embodiment.
- the wet etching step may be performed in the same direction as the laser processing as shown in FIG. 8 (base top surface-> base top surface) or as shown in FIG. 9, in the direction opposite to the laser processing (base top surface).
- Single side etching may be performed on the base, or both side sequential double side etching or simultaneous etching may be performed if necessary.
- the wet etching pattern 130 manufactured by wet etching is continuously formed on the processing surface of the laser processing pattern 120 by the laser processing, as shown in FIG. 8, or as shown in FIG. 9. It may be continuously formed in the direction opposite to the processing surface of the laser processing pattern 120 by the laser processing.
- the thickness (t in FIG. 9) of the wet etching pattern 130 continuously formed in the direction opposite to the processing surface of the laser processing pattern 120 by the laser processing is 40 with respect to the entire thickness of the base 110. It may be formed to less than%, this form is to ensure the dimensional and shape stability of the opening of the shadow mask.
- the wet etching pattern is characterized in that the radius of curvature of the wet etching pattern processing surface has a value smaller than the processing depth of the wet etching pattern.
- the radius of curvature R of the wet etching pattern due to the isotropic property of the etching process is determined in the cross-section depth, that is, the processing depth of the wet etching pattern d. It must have the same value as).
- the radius of curvature (R) of the wet etching pattern on the surface of the wet etching pattern is adjusted by adjusting the energy level of the laser for each position.
- the etching depth of the etching pattern (d) that is, it can be implemented (R ⁇ d) or less, and can be adjusted to any value within the following value range.
- the present invention can manufacture a shadow mask by using a combination of laser processing and wet etching, thereby solving the problem of productivity degradation due to the conventional laser processing process, and providing a high quality shadow mask by wet etching.
- most of the openings are formed by laser processing, and the radius of curvature of the wet etching pattern on the processed surface of the wet etching pattern is adjusted by adjusting the energy level for each position during the laser processing. Not only can be implemented below the limit value, it can be adjusted to any value from the following value has the effect of implementing various types of openings.
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Abstract
Description
Claims (21)
- 마스크패턴이 형성된 섀도우 마스크의 제조방법에 있어서,베이스 상측에서 레이저빔을 조사하여, 상기 베이스에 레이저가공패턴을 형성하는 레이저가공단계;상기 레이저가공패턴이 형성된 베이스 상측 또는 하측에서 습식에칭을 수행하여, 상기 레이저가공패턴에 연속하는 습식에칭패턴을 형성하는 습식에칭단계;를 포함하여 이루어지는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 1항에 있어서, 상기 레이저가공단계는,상기 베이스 상에 단위 가공영역을 설정하는 제1단계;레이저빔이 상기 단위 가공영역의 한 경계에서 시작하여, 1번째 스캔경로(scan path)를 따라 이동해가며, 상기 단위 가공영역의 다른 쪽 경계에 도달할 때까지, 상기 단위 가공영역 내에 포함되는 레이저가공패턴에 대한 가공이 이루어지는 제2단계;상기 레이저빔을 다음 스텝(step)으로 방향을 전환하고, 스텝피치(step pitch)만큼 이동시켜 2번째 스캔경로로 이동시키는 제3단계; 및상기 제2단계 및 제3단계를 반복수행하여 n번째 스캔경로를 따라 레이저빔의 이동이 완료되면 단위 가공영역 전체에 대한 가공이 이루어지는 제4단계;를 포함하는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 2항에 있어서, 상기 복합 가공 방법을 이용한 섀도우 마스크의 제조방법은,각 스캔경로에 대응하여 가공깊이를 설정하는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 3항에 있어서, 상기 가공깊이의 설정은,상기 스캔경로를 이동하는 레이저빔의 오버랩률(overlap rate)[오버랩률={(레이저빔의 크기 - 스캔피치)/레이저빔의 크기} x 100, 스캔피치=v/f, v : 구동부의 동작에 의한 베이스와 레이저빔의 상대 속도, f : 베이스에 인가되는 레이저 소스의 펄스 진동수]에 의해 결정되는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 3항에 있어서, 상기 가공깊이의 설정은,상기 스캔경로의 중첩회수에 의해 결정되는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 3항에 있어서, 상기 가공깊이의 설정은,상기 스캔경로 별로 에너지 강도를 설정 및 하나의 스캔경로 내에서도 레이저 소스의 펄스 별로 에너지 강도를 설정하거나 이 둘의 조합에 의해 결정되는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 3항에 있어서, 상기 가공깊이의 설정은,상기 스캔경로를 이동하는 레이저빔의 오버랩률(overlap rate)[오버랩률={(레이저빔의 크기 - 스캔피치)/레이저빔의 크기} x 100, 스캔피치=v/f, v : 구동부의 동작에 의한 베이스와 레이저빔의 상대 속도, f : 베이스에 인가되는 레이저 소스의 펄스 진동수];상기 스캔경로의 중첩회수; 및상기 스캔경로 별로 에너지 강도를 설정하거나 하나의 스캔경로 내에서도 레이저 소스의 펄스 별로 에너지 강도를 설정;이들 중 둘 이상의 조합에 의해 결정되는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 2항에 있어서, 상기 1,...,n번째 스캔경로와, 상기 스캔경로에 수직하는 1,...,m번째 스캔경로를 설정하여, 레이저가공패턴을 형성하는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 8항에 있어서, 상기 스캔경로에 따라 에너지 누적 분포를 순차적인 강도로 설정하여 테이퍼 형상의 레이저가공패턴을 형성하는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 2항에 있어서, 상기 단위 가공영역에 포함된 레이저가공패턴 영역 상에 다수개의 에너지 영역을 설정하여, 에너지 영역별로 에너지 누적 분포를 순차적인 강도로 설정하여 가공깊이를 설정하는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 10항에 있어서, 상기 에너지 영역별로 에너지 누적 분포의 설정은,상기 스캔경로의 중첩회수 또는상기 스캔경로를 이동하는 레이저 소스의 펄스 별로 에너지 강도의 변화에 의해 이루어지는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 10항에 있어서, 상기 에너지 영역별로 에너지 누적 분포의 설정은,상기 스캔경로의 중첩회수를 순차적으로 설정하거나,상기 스캔경로를 이동하는 레이저 소스의 펄스 별로 에너지 강도를 순차적으로 설정하여 테이퍼 형상의 레이저가공패턴을 형성하는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 2항에 있어서, n-1번째 스캔경로에서 n번째 스캔경로로의 방향 전환시 스텝피치는, n-1번째 스캔경로의 레이저빔의 크기보다 같거나 작은 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 2항에 있어서, n-1번째 스캔경로와 n번째 스캔경로는, 같은 방향 또는 반대 방향으로 레이저빔이 이동하는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 2항에 있어서, n-1번째 스캔피치와 n번째 스캔피치는, 레이저가공패턴의 형태에 따라 다르게 설정되는 것(스캔피치=v/f, v : 구동부의 동작에 의한 베이스과 레이저빔의 상대 속도, f : 베이스 위에 인가되는 레이저 소스의 펄스 진동수)을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 1항에 있어서, 상기 습식에칭단계는,상기 베이스 상측 또는 하측에 상기 습식에칭패턴 형성을 위한 포토레지스트 패턴을 형성하고, 포토레지스트가 제거된 부위를 따라 상기 베이스의 습식에칭이 이루어지는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 16항에 있어서, 상기 습식에칭단계는,상기 레이저가공과 동일한 방향 또는 반대방향으로 상기 베이스에 한면 에칭을 수행하거나, 순차적 양면 에칭 또는 동시 양면 에칭을 수행하는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 17항에 있어서, 상기 습식에칭에 의한 상기 습식에칭패턴은,상기 레이저가공에 의한 레이저가공패턴의 가공면에 연속적으로 형성되거나,상기 레이저가공에 의한 레이저가공패턴의 가공면과 반대방향으로 연속적으로 형성되는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 18항에 있어서, 상기 레이저가공에 의한 레이저가공패턴의 가공면과 반대방향으로 연속적으로 형성된 습식에칭패턴의 두께는,상기 베이스 전체 두께에 대해 40% 이하로 형성된 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 1항에 있어서, 상기 습식에칭패턴은,상기 습식에칭패턴 가공면에 대한 곡률반경이 상기 습식에칭패턴의 가공깊이보다 작은 값을 갖는 것을 특징으로 하는 복합 가공 방법을 이용한 섀도우 마스크의 제조방법.
- 제 1항 내지 제 20항 중의 어느 한 항의 제조방법에 의해 제조된 섀도우 마스크.
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CN201680045716.0A CN107851716B (zh) | 2015-08-10 | 2016-08-04 | 用于使用混合加工方法来制造荫罩的方法以及由此制造的荫罩 |
US15/744,029 US10680177B2 (en) | 2015-08-10 | 2016-08-04 | Method of manufacturing shadow mask using hybrid processing and shadow mask manufactured thereby |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109652760A (zh) * | 2017-10-11 | 2019-04-19 | Ap系统股份有限公司 | 激光加工方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI654049B (zh) * | 2017-05-16 | 2019-03-21 | 中國砂輪企業股份有限公司 | 研磨工具及其製造方法 |
KR20220041294A (ko) | 2020-09-24 | 2022-04-01 | 삼성디스플레이 주식회사 | 증착 마스크, 이의 제조 방법, 및 표시 패널 제조 방법 |
WO2022092848A1 (ko) * | 2020-10-30 | 2022-05-05 | 에이피에스홀딩스 주식회사 | 증착 마스크 |
KR102284941B1 (ko) * | 2021-05-10 | 2021-08-04 | 위폼스 주식회사 | FL(Flip laser) OLED 마스크 제조방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000029265A (ko) * | 1998-10-23 | 2000-05-25 | 가네꼬 히사시 | 섀도우 마스크, 이 섀도우 마스크의 제조방법 및 이섀도우 마스크를 이용한 반도체 소자의 제조방법 |
KR20060080476A (ko) * | 2005-01-05 | 2006-07-10 | 삼성에스디아이 주식회사 | 섀도우마스크 패턴 형성방법 |
KR20130013990A (ko) * | 2011-07-29 | 2013-02-06 | 지에스칼텍스 주식회사 | 레이저를 이용하여 박막의 엣지를 가공하는 박막 전지의 제조 방법 |
KR20130142739A (ko) * | 2012-06-20 | 2013-12-30 | 풍원정밀(주) | 박판금속가공품의 제조방법 및 이에 따라 제조되는 박판금속가공품 |
KR20140105239A (ko) * | 2013-02-22 | 2014-09-01 | 삼성디스플레이 주식회사 | 레이저 빔을 이용한 마스크 제조 방법 및 마스크 제조 장치 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5726163A (en) * | 1980-07-23 | 1982-02-12 | Hitachi Ltd | Mask for forming thin film and its manufacture |
US6627844B2 (en) * | 2001-11-30 | 2003-09-30 | Matsushita Electric Industrial Co., Ltd. | Method of laser milling |
KR100498459B1 (ko) * | 2002-11-19 | 2005-07-01 | 삼성전자주식회사 | 하드디스크 드라이브의 디펙트 리스트 탐색 방법 |
JP3794407B2 (ja) * | 2003-11-17 | 2006-07-05 | セイコーエプソン株式会社 | マスク及びマスクの製造方法、表示装置の製造方法、有機el表示装置の製造方法、有機el装置、及び電子機器 |
JP3852471B2 (ja) * | 2004-05-21 | 2006-11-29 | 三菱瓦斯化学株式会社 | 物質の酸化方法およびその酸化装置 |
DE202009004014U1 (de) | 2009-03-25 | 2009-06-04 | Trumpf Werkzeugmaschinen Gmbh + Co. Kg | Stanzwerkzeug und Werkzeugmaschine damit |
CN101527342B (zh) * | 2009-03-31 | 2011-04-06 | 西安电子科技大学 | AlGaN基蓝宝石衬底的紫外LED器件的制作方法 |
KR101347471B1 (ko) * | 2009-09-29 | 2014-01-02 | 샤프 가부시키가이샤 | 유기 el 디바이스 및 유기 el 디바이스의 제조 방법 |
TWI565119B (zh) * | 2011-05-27 | 2017-01-01 | 半導體能源研究所股份有限公司 | 發光裝置的製造方法及發光裝置 |
JP5935629B2 (ja) * | 2012-04-23 | 2016-06-15 | 大日本印刷株式会社 | 蒸着マスクの製造方法 |
JP5534093B1 (ja) * | 2013-01-11 | 2014-06-25 | 大日本印刷株式会社 | メタルマスクおよびメタルマスクの製造方法 |
JP6229344B2 (ja) * | 2013-07-22 | 2017-11-15 | 大日本印刷株式会社 | メタルマスクの製造方法 |
KR102134363B1 (ko) * | 2013-09-10 | 2020-07-16 | 삼성디스플레이 주식회사 | 메탈 마스크 제작 방법 및 이를 이용한 메탈 마스크 |
JP2015100951A (ja) * | 2013-11-22 | 2015-06-04 | キヤノン株式会社 | 画像形成装置、画像形成装置の制御方法、及びプログラム |
CN104404446B (zh) * | 2014-11-18 | 2017-07-04 | 上海工程技术大学 | 一种超高分辨率蒸镀用精细金属掩膜板及其制作方法 |
KR102552275B1 (ko) * | 2015-07-31 | 2023-07-07 | 삼성디스플레이 주식회사 | 마스크 제조방법 |
KR102557891B1 (ko) * | 2015-10-16 | 2023-07-21 | 삼성디스플레이 주식회사 | 마스크의 제조 방법 |
-
2015
- 2015-08-10 KR KR1020150112609A patent/KR101674506B1/ko active IP Right Grant
-
2016
- 2016-08-04 WO PCT/KR2016/008600 patent/WO2017026742A1/ko active Application Filing
- 2016-08-04 US US15/744,029 patent/US10680177B2/en active Active
- 2016-08-04 JP JP2018506899A patent/JP6608040B2/ja active Active
- 2016-08-04 CN CN201680045716.0A patent/CN107851716B/zh active Active
- 2016-08-05 TW TW105124912A patent/TWI696880B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000029265A (ko) * | 1998-10-23 | 2000-05-25 | 가네꼬 히사시 | 섀도우 마스크, 이 섀도우 마스크의 제조방법 및 이섀도우 마스크를 이용한 반도체 소자의 제조방법 |
KR20060080476A (ko) * | 2005-01-05 | 2006-07-10 | 삼성에스디아이 주식회사 | 섀도우마스크 패턴 형성방법 |
KR20130013990A (ko) * | 2011-07-29 | 2013-02-06 | 지에스칼텍스 주식회사 | 레이저를 이용하여 박막의 엣지를 가공하는 박막 전지의 제조 방법 |
KR20130142739A (ko) * | 2012-06-20 | 2013-12-30 | 풍원정밀(주) | 박판금속가공품의 제조방법 및 이에 따라 제조되는 박판금속가공품 |
KR20140105239A (ko) * | 2013-02-22 | 2014-09-01 | 삼성디스플레이 주식회사 | 레이저 빔을 이용한 마스크 제조 방법 및 마스크 제조 장치 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109652760A (zh) * | 2017-10-11 | 2019-04-19 | Ap系统股份有限公司 | 激光加工方法 |
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JP2018526537A (ja) | 2018-09-13 |
KR101674506B1 (ko) | 2016-11-10 |
JP6608040B2 (ja) | 2019-11-20 |
US20180205018A1 (en) | 2018-07-19 |
US10680177B2 (en) | 2020-06-09 |
TWI696880B (zh) | 2020-06-21 |
TW201723639A (zh) | 2017-07-01 |
CN107851716B (zh) | 2020-08-21 |
CN107851716A (zh) | 2018-03-27 |
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