WO2017020337A1 - 彩色滤光基板及其制备方法 - Google Patents

彩色滤光基板及其制备方法 Download PDF

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WO2017020337A1
WO2017020337A1 PCT/CN2015/086782 CN2015086782W WO2017020337A1 WO 2017020337 A1 WO2017020337 A1 WO 2017020337A1 CN 2015086782 W CN2015086782 W CN 2015086782W WO 2017020337 A1 WO2017020337 A1 WO 2017020337A1
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black matrix
color filter
filter substrate
photoresist
material layer
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PCT/CN2015/086782
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English (en)
French (fr)
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宋江江
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深圳市华星光电技术有限公司
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Priority to US14/777,842 priority Critical patent/US20170038506A1/en
Publication of WO2017020337A1 publication Critical patent/WO2017020337A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular, to a color filter substrate and a method for fabricating the same.
  • LCD Liquid Crystal Display
  • TFT Thin Film Transistor
  • the liquid crystal panel is usually composed of a thin film transistor array substrate, a color filter substrate, and a liquid crystal layer.
  • the function of the color filter substrate is to filter the white light passing through the liquid crystal layer into beams of different colors, and the beams of different colors are re-aggregated to form an image frame.
  • the color filter substrate typically includes a glass substrate and a black matrix and color photoresist formed on the glass substrate by a photomask process (MASK).
  • MASK photomask process
  • the resolution requirements of liquid crystal panels are getting higher and higher, and the corresponding number of pixels per inch (Pixels Per Inch, PPI) is higher, especially for smaller size liquid crystal panels, which requires a glass substrate.
  • the upper black matrix has a finer line width to increase the aperture ratio of the liquid crystal panel.
  • a conventional color filter substrate preparation process generally includes the steps of: S1, providing a glass substrate 1 and preparing a photosensitive black material layer 2 on the glass substrate 1, as shown in (a) of FIG. Further, the photosensitive black material layer 2 is further pre-baked. S2. Exposing the photosensitive black material layer 2 through an exposure mask 3 to cure the exposed region, as shown in (b) of FIG. S3, removing the unexposed portion of the photosensitive black material layer 2 by a developing process, leaving the exposed solidified portion, forming a black matrix 4 on the glass substrate 1, as shown in (c) of FIG. 1; further on the black matrix 4 post-baking.
  • a color photoresist 5 is formed on the glass substrate 1 having the black matrix 4, as shown in (d) of FIG. 1; the color photoresist 5 includes a red photoresist 5R, a green photoresist 5G, and a blue photoresist 5B. .
  • the black matrix 4 In the preparation process of the color filter substrate described above, when the photosensitive black material layer 2 is exposed and developed to form the black matrix 4, generally, the upper end of the photosensitive black material layer 2 is developed faster in the thickness direction thereof. The lower end is developed more slowly. Therefore, as shown in FIG. 2, the black matrix 4 finally formed has a line width of the black matrix top surface 41 smaller than the line width of the black matrix bottom surface 42 in the thickness direction thereof, and the black matrix top surface 41 and the black matrix bottom surface 42 have a slope.
  • the angle ⁇ between the black matrix bottom surface 42 and the connecting slope 43 is a taper angle, which ranges from 20 to 40 degrees according to the prior art.
  • the line width of the black matrix top surface 41 When the line width of the black matrix top surface 41 is constant, the smaller the angle ⁇ is, the larger the line width of the black matrix bottom surface 42 is, and the larger the line width of the entire black matrix 4 is, resulting in loss of aperture ratio. Since the line width of the black matrix top surface 41 cannot be reduced without limitation, if the angle ⁇ between the black matrix bottom surface 42 and the connection slope 43 can be increased, the line width of the black matrix bottom surface 42 can be reduced. It is possible to reduce the line width of the entire black matrix 4 and increase the aperture ratio of the liquid crystal panel.
  • the present invention provides a method for preparing a color filter substrate, which improves the exposure between the bottom surface and the connecting bevel in the black matrix by improving the exposure and development process for forming the black matrix.
  • the angle reduces the line width of the black matrix as a whole and increases the aperture ratio of the liquid crystal panel.
  • a method for preparing a color filter substrate comprising the steps of: S101, providing a glass substrate and preparing a photosensitive black material layer on the glass substrate; S102, the photosensitive black through an exposure mask The material layer is subjected to an exposure process; S103, performing a first development process on the photosensitive black material layer, obtaining a preliminary black matrix on the glass substrate; S104, performing a second development process on the preliminary black matrix The final black matrix is obtained on the glass substrate.
  • the line width of the top surface of the black matrix is smaller than the line width of the bottom surface of the black matrix, and the top surface of the black matrix and the bottom surface of the black matrix are connected by a slope, and the angle between the bottom surface of the black matrix and the connecting slope is ⁇ .
  • the range is 40 to 60 °.
  • the line width of the top surface of the final black matrix is 3 to 4 ⁇ m, and the line width of the bottom surface of the final black matrix is 6 to 7 ⁇ m.
  • the step S101 further includes pre-baking the photosensitive black material layer, and the prebaking temperature is 80 to 110 ° C, and the time is 80 to 120 s.
  • the step S103 further includes performing a first post-baking on the preliminary black matrix, and the temperature of the first post-baking is 200-250 ° C, and the time is 5-30 min.
  • the step S104 further includes performing a second post-baking on the final black matrix, and the second post-baking temperature is 200-250 ° C, and the time is 5-30 min.
  • the photosensitive black material layer has a thickness of 1 to 2.5 ⁇ m.
  • the method further comprises the step of forming a color photoresist on the glass substrate, the color photoresist being formed in a plurality of openings formed by the final black matrix.
  • the color photoresist comprises a red photoresist, a green photoresist and a blue photoresist.
  • the present invention also provides a color filter substrate which is obtained by the preparation method as described above.
  • the method for preparing a color filter substrate provided by the embodiment of the present invention, when exposing and developing a photosensitive black material layer to form a black matrix, sequentially adopts a double exposure development process, and a line width on the top surface of the black matrix.
  • the angle between the bottom surface of the black matrix and the connecting slope is increased, and the line width of the bottom surface of the black matrix is reduced, thereby reducing the line width of the black matrix as a whole and improving the aperture ratio of the liquid crystal panel.
  • FIG. 1 is a process flow diagram showing a method of fabricating a color filter substrate of the prior art.
  • FIG. 2 is a structural diagram of a black matrix prepared by a prior art method.
  • FIG. 3 is a process flow diagram showing a method of preparing a color filter substrate in an embodiment of the present invention.
  • FIG. 4 is a flow chart showing the process of preparing a red photoresist in an embodiment of the present invention.
  • Fig. 5 is a structural diagram of a black matrix prepared in an embodiment of the present invention.
  • a method for preparing a color filter substrate includes the following steps:
  • a glass substrate 10 is provided and a photosensitive black material layer 20 is prepared on the glass substrate 10, as shown in (a) of FIG.
  • the glass substrate 10 is first cleaned with a cleaning agent, and the cleaning agent may be deionized water.
  • the cleaning agent may be selected to contain a surfactant-containing cleaning agent; then preparing a layer of photosensitive black material 20 having a thickness of 1 to 2.5 ⁇ m on the cleaned glass substrate 10; further, pre-baking the photosensitive black material layer 20
  • the temperature for baking and prebaking can be selected from 80 to 110 ° C and the time can be from 80 to 120 s.
  • a KOH developer may be used for the negative photosensitive black material, the development time is about 80 s, the unexposed portion of the photosensitive black material layer 20 is dissolved in the developer, and the exposed solidified portion is insoluble in the developer.
  • a preliminary black matrix 40a is formed.
  • the preliminary black matrix 4a is also subjected to a first post-baking, and the temperature of the first post-baking may be selected to be 200 to 250 ° C, and the time may be 5 to 30 min. For example, the temperature of the first post-baking is set to 230 ° C and the time is 10 min.
  • the developer used is the same as the developer used in the step S103.
  • the line width of the bottom surface of the preliminary black matrix 40a is reduced, or the final black matrix 40 has a smaller line width than the preliminary black matrix 40a.
  • the final black matrix 4a is further subjected to a second post-baking, and the temperature of the second post-baking may be selected to be 200 to 250 ° C, and the time may be 5 to 30 min. For example, the temperature of the second post-baking is set to 230 ° C, and the time is 10 min.
  • the color photoresist 50 includes a red photoresist 50R, a green photoresist 50G, and a blue photoresist 50B.
  • the step specifically includes: 1. forming a red photoresist film on the glass substrate 10 having the black matrix 40.
  • a green photoresist 50G and a blue photoresist 50G are further respectively prepared, wherein each color photoresist (red photoresist 50R, green photoresist 50G, and blue photoresist 50B) is formed on the black matrix 40, respectively.
  • each color photoresist red photoresist 50R, green photoresist 50G, and blue photoresist 50B
  • One of the openings 60 is in the middle.
  • the line width d1 of the black matrix top surface 401 is smaller than the line width d2 of the black matrix bottom surface 402, and the black matrix top surface 401 and the black matrix bottom surface 402 are beveled, black matrix.
  • the angle ⁇ between the bottom surface 402 and the connecting slope 403 is in the range of 40 to 60°.
  • the line width d1 of the final black matrix top surface 401 is 3 to 4 ⁇ m
  • the line width d2 of the final black matrix bottom surface 402 is 6 to 7 ⁇ m.
  • the method for preparing a color filter substrate when exposing and developing a photosensitive black material layer to form a black matrix, sequentially adopts a double exposure development process in a black matrix.
  • the line width of the top surface is constant, the angle between the bottom surface of the black matrix and the connecting slope is increased, and the line width of the bottom surface of the black matrix is reduced, thereby reducing the overall line width of the black matrix and improving the opening of the liquid crystal panel. rate.

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  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
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  • Chemical & Material Sciences (AREA)
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Abstract

一种彩色滤光基板和彩色滤光基板的制备方法，该方法包括步骤：S101、提供一玻璃基板(10)并在该玻璃基板(10)上制备一感光性黑色材料层(20)；S102、通过一曝光光罩(30)对所述感光性黑色材料层(20)进行曝光工艺；S103、对所述感光性黑色材料层(20)进行第一次显影工艺，在所述玻璃基板(10)上获得初步的黑色矩阵(40a)；S104、对所述初步的黑色矩阵(40a)进行第二次显影工艺，在所述玻璃基板(10)上获得最终的黑色矩阵(40)。

Description

彩色滤光基板及其制备方法 技术领域
本发明涉及液晶显示器技术领域,尤其涉及一种彩色滤光基板及其制备方法。
背景技术
液晶显示器(Liquid Crystal Display，LCD)，为平面超薄的显示设备，它由一定数量的彩色或黑白像素组成，放置于光源或者反射面前方。液晶显示器功耗很低，并且具有高画质、体积小、重量轻的特点，因此倍受大家青睐，成为显示器的主流。目前液晶显示器是以薄膜晶体管(Thin Film Transistor，TFT)液晶显示器为主，液晶面板是液晶显示器的主要组件。
液晶面板通常由薄膜晶体管阵列基板、彩色滤光基板和液晶层组成。彩色滤光基板的作用是将通过液晶层的白光过滤为不同颜色的光束，各不同颜色的光束重新汇聚形成图像画面。彩色滤光基板通常包括玻璃基板以及通过光罩工艺(MASK)在玻璃基板上形成的黑色矩阵和彩色光阻。近年来，液晶面板的分辨率要求越来越高，其相应的每英寸所拥有的像素数目(Pixels Per Inch，PPI)值越高，特别是对于较小尺寸的液晶面板，这就要求玻璃基板上的黑色矩阵具有更细的线宽，以增大液晶面板的开口率。
参阅图1，现有的彩色滤光基板的制备工艺通常包括步骤：S1、提供一玻璃基板1并在玻璃基板1上制备一感光性黑色材料层2，如图1中的(a)所示；进一步地还对感光性黑色材料层2进行预烘烤。S2、通过一曝光光罩3对感光性黑色材料层2进行曝光，使曝光区域固化，如图1中的(b)所示。S3、通过显影工艺去除感光性黑色材料层2未曝光的部分，保留曝光固化的部分，在玻璃基板1上形成黑色矩阵4，如图1中的(c)所示；进一步地还对黑色矩阵4进行后烘烤。S5、在具有黑色矩阵4的玻璃基板1上形成彩色光阻5，如图1中的(d)所示；所述彩色光阻5包括红色光阻5R、绿色光阻5G和蓝色光阻5B。
在上述彩色滤光基板的制备工艺中，对感光性黑色材料层2曝光显影形成黑色矩阵4时，在其厚度方向上，通常地，感光性黑色材料层2的上端显影较快， 而下端显影较慢。因此，如图2所示，最终形成的黑色矩阵4，在其厚度方向上，黑色矩阵顶面41的线宽小于黑色矩阵底面42的线宽，黑色矩阵顶面41和黑色矩阵底面42呈斜面连接，黑色矩阵底面42与连接斜面43之间的夹角α为一尖角(taper angle)，按照现有的工艺，该角度的范围是20～40°。在黑色矩阵顶面41的线宽一定时，夹角α越小，则黑色矩阵底面42的线宽越大，黑色矩阵4整体的线宽越大，造成开口率损失。由于黑色矩阵顶面41的线宽不可无限制地减小，因此，若可以增大黑色矩阵底面42与连接斜面43之间的夹角α，则可减小黑色矩阵底面42的线宽，这就可以减小黑色矩阵4整体的线宽，提升液晶面板的开口率。
发明内容
鉴于现有技术存在的不足，本发明提供了一种彩色滤光基板的制备方法，该方法通过对形成黑色矩阵的曝光显影工序进行改进，增大了黑色矩阵中底面与连接斜面之间的夹角，减小了黑色矩阵整体的线宽，提升液晶面板的开口率。
为了实现上述目的，本发明采用了如下的技术方案：
一种彩色滤光基板的制备方法，其中，该方法包括步骤：S101、提供一玻璃基板并在该玻璃基板上制备一感光性黑色材料层；S102、通过一曝光光罩对所述感光性黑色材料层进行曝光工艺；S103、对所述感光性黑色材料层进行第一次显影工艺，在所述玻璃基板上获得初步的黑色矩阵；S104、对所述初步的黑色矩阵进行第二次显影工艺，在所述玻璃基板上获得最终的黑色矩阵。
其中，所述最终的黑色矩阵中，黑色矩阵顶面的线宽小于黑色矩阵底面的线宽，黑色矩阵顶面和黑色矩阵底面呈斜面连接，黑色矩阵底面与连接斜面之间的夹角β的范围是40～60°。
其中，所述最终的黑色矩阵顶面的线宽为3～4μm，所述最终的黑色矩阵底面的线宽为6～7μm。
其中，步骤S101中，还包括对所述感光性黑色材料层进行预烘烤，预烘烤的温度为80～110℃，时间为80～120s。
其中，步骤S103中，还包括对所述初步的黑色矩阵进行第一次后烘烤，第一次后烘烤的温度为200～250℃，时间为5～30min。
其中，步骤S104中，还包括对所述最终的黑色矩阵进行第二次后烘烤，第二次后烘烤的温度为200～250℃，时间为5～30min。
其中，所述感光性黑色材料层的厚度为1～2.5μm。
其中，该方法还包括在所述玻璃基板上形成彩色光阻的步骤，所述彩色光阻形成于所述最终的黑色矩阵包围形成的多个开口部中。
其中，所述彩色光阻包括红色光阻、绿色光阻和蓝色光阻。
本发明还提供了一种彩色滤光基板，该彩色滤光基板采用如上所述的制备方法制备获得。
相比于现有技术，本发明实施例提供的彩色滤光基板的制备方法，对感光性黑色材料层曝光显影形成黑色矩阵时，依次采用两次曝光显影工艺，在黑色矩阵顶面的线宽一定时，增大了黑色矩阵中底面与连接斜面之间的夹角，减小黑色矩阵底面的线宽，从而减小了黑色矩阵整体的线宽，提升了液晶面板的开口率。
附图说明
图1是现有技术的彩色滤光基板的制备方法的工艺流程图示。
图2是现有技术的方法制备得到的黑色矩阵的结构图示。
图3是本发明实施例中的彩色滤光基板的制备方法的工艺流程图示。
图4为本发明实施例中制备红色光阻的工艺流程图示。
图5是本发明实施例中制备得到的黑色矩阵的结构图示。
具体实施方式
下面将结合附图以及具体实施例，对本发明实施例中的技术方案进行详细地描述，显然，所描述的实施例仅仅是本发明一部分实例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护范围。
参阅如图3，本实施例提供的一种彩色滤光基板的制备方法，其具体包括步骤：
S101、提供一玻璃基板10并在该玻璃基板10上制备一感光性黑色材料层20，如图3中的(a)所示。具体地，首先采用清洗剂清洗该玻璃基板10，清洗剂可以为去离子水，当玻璃基板10上含有一些油性污垢时，清洗剂可以选用含 有表面活性剂的清洗剂；然后在清洗干净后的玻璃基板10上制备一层厚度为1～2.5μm范围内的感光性黑色材料层20；进一步地，对感光性黑色材料层20进行预烘烤，预烘烤的温度可以选择为80～110℃，时间可以为80～120s。
S102、通过一曝光光罩30对所述感光性黑色材料层20进行曝光工艺，如图3中的(b)所示。通常地，感光性黑色材料为负性，曝光区域发生光固化。
S103、对曝光后的感光性黑色材料层20进行第一次显影工艺，在所述玻璃基板10上获得初步的黑色矩阵40a，初步的黑色矩阵40a包围形成多个开口部60，如图3中的(c)所示。具体地，对于负性的感光性黑色材料，可以选用KOH显影液，显影的时间为80s左右，感光性黑色材料层20未曝光的部分溶解于显影液中去除，曝光固化的部分不溶于显影液形成初步的黑色矩阵40a。进一步地，还对所述初步的黑色矩阵4a进行第一次后烘烤，第一次后烘烤的温度可以选择为200～250℃，时间可以为5～30min。例如第一次后烘烤的温度设定为230℃，时间为10min。
S104、对所述初步的黑色矩阵40a进行第二次显影工艺，在所述玻璃基板10上获得最终的黑色矩阵40，如图3中的(d)所示。其中，所采用的显影液与步骤S103中使用的显影液相同。通过该步骤的第二次显影工艺之后，减小了初步的黑色矩阵40a底面的线宽，或者说，最终的黑色矩阵40相比于初步的黑色矩阵40a，其底面的线宽更小。进一步地，还对所述最终的黑色矩阵4a进行第二次后烘烤，第二次后烘烤的温度可以选择为200～250℃，时间可以为5～30min。例如第二次后烘烤的温度设定为230℃，时间为10min。
S105、应用光罩工艺在具有黑色矩阵40的玻璃基板10上形成彩色光阻50，获得所述彩色滤光基板，如图3中的(e)所示。其中，所述彩色光阻50包括红色光阻50R、绿色光阻50G和蓝色光阻50B。具体地，以制备红色光阻50R为例，参阅图4，该步骤具体包括：Ⅰ、在具有黑色矩阵40的玻璃基板10上形成一层红色光阻薄膜。Ⅱ、在所述彩色光阻薄膜上涂覆光刻胶，并通过对光刻胶的曝光、显影保留红色光阻图形区域的光刻胶。Ⅲ、刻蚀掉暴露出的红色光阻薄膜并剥离剩余的光刻胶，形成所述红色光阻50R。
按照步骤Ⅰ～Ⅲ，进一步地分别制备出绿色光阻50G和蓝色光阻50G，其中每一彩色光阻(红色光阻50R、绿色光阻50G和蓝色光阻50B)分别形成于前述黑色矩阵40的其中一个开口部60中。最终得到的
其中，如图5所示，最终的黑色矩阵40中，黑色矩阵顶面401的线宽d1小于黑色矩阵底面402的线宽d2，黑色矩阵顶面401和黑色矩阵底面402呈斜面连接，黑色矩阵底面402与连接斜面403之间的夹角β的范围是40～60°。进一步地，所述最终的黑色矩阵顶面401的线宽d1为3～4μm，所述最终的黑色矩阵底面402的线宽d2为6～7μm。
综上所述，相比于现有技术，本发明实施例提供的彩色滤光基板的制备方法，对感光性黑色材料层曝光显影形成黑色矩阵时，依次采用两次曝光显影工艺，在黑色矩阵顶面的线宽一定时，增大了黑色矩阵中底面与连接斜面之间的夹角，减小黑色矩阵底面的线宽，从而减小了黑色矩阵整体的线宽，提升了液晶面板的开口率。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (17)

  1. 一种彩色滤光基板的制备方法，其中，包括步骤：
    S101、提供一玻璃基板并在该玻璃基板上制备一感光性黑色材料层；
    S102、通过一曝光光罩对所述感光性黑色材料层进行曝光工艺；
    S103、对所述感光性黑色材料层进行第一次显影工艺，在所述玻璃基板上获得初步的黑色矩阵；
    S104、对所述初步的黑色矩阵进行第二次显影工艺，在所述玻璃基板上获得最终的黑色矩阵。
  2. 根据权利要求1所述的彩色滤光基板的制备方法，其中，所述最终的黑色矩阵中，黑色矩阵顶面的线宽小于黑色矩阵底面的线宽，黑色矩阵顶面和黑色矩阵底面呈斜面连接，黑色矩阵底面与连接斜面之间的夹角β的范围是40～60°。
  3. 根据权利要求1所述的彩色滤光基板的制备方法，其中，所述最终的黑色矩阵顶面的线宽为3～4μm，所述最终的黑色矩阵底面的线宽为6～7μm。
  4. 根据权利要求1所述的彩色滤光基板的制备方法，其中，步骤S101中，还包括对所述感光性黑色材料层进行预烘烤，预烘烤的温度为80～110℃，时间为80～120s。
  5. 根据权利要求1所述的彩色滤光基板的制备方法，其中，步骤S103中，还包括对所述初步的黑色矩阵进行第一次后烘烤，第一次后烘烤的温度为200～250℃，时间为5～30min。
  6. 根据权利要求1所述的彩色滤光基板的制备方法，其中，步骤S104中，还包括对所述最终的黑色矩阵进行第二次后烘烤，第二次后烘烤的温度为200～250℃，时间为5～30min。
  7. 根据权利要求1所述的彩色滤光基板的制备方法，其中，所述感光性黑色材料层的厚度为1～2.5μm。
  8. 根据权利要求1所述的彩色滤光基板的制备方法，其中，该方法还包括在所述玻璃基板上形成彩色光阻的步骤，所述彩色光阻形成于所述最终的黑色 矩阵包围形成的多个开口部中。
  9. 根据权利要求8所述的彩色滤光基板的制备方法，其中，所述彩色光阻包括红色光阻、绿色光阻和蓝色光阻。
  10. 一种彩色滤光基板，包括形成于玻璃基板上的黑色矩阵以及彩色光阻，所述彩色光阻形成于所述黑色矩阵包围形成的多个开口部中，其中，形成所述黑色矩阵的具体包括步骤：
    S101、提供一玻璃基板并在该玻璃基板上制备一感光性黑色材料层；
    S102、通过一曝光光罩对所述感光性黑色材料层进行曝光工艺；
    S103、对所述感光性黑色材料层进行第一次显影工艺，在所述玻璃基板上获得初步的黑色矩阵；
    S104、对所述初步的黑色矩阵进行第二次显影工艺，在所述玻璃基板上获得最终的黑色矩阵。
  11. 根据权利要求10所述的彩色滤光基板的制备方法，其中，所述最终的黑色矩阵中，黑色矩阵顶面的线宽小于黑色矩阵底面的线宽，黑色矩阵顶面和黑色矩阵底面呈斜面连接，黑色矩阵底面与连接斜面之间的夹角β的范围是40～60°。
  12. 根据权利要求10所述的彩色滤光基板的制备方法，其中，所述最终的黑色矩阵顶面的线宽为3～4μm，所述最终的黑色矩阵底面的线宽为6～7μm。
  13. 根据权利要求10所述的彩色滤光基板的制备方法，其中，步骤S101中，还包括对所述感光性黑色材料层进行预烘烤，预烘烤的温度为80～110℃，时间为80～120s。
  14. 根据权利要求10所述的彩色滤光基板的制备方法，其中，步骤S103中，还包括对所述初步的黑色矩阵进行第一次后烘烤，第一次后烘烤的温度为200～250℃，时间为5～30min。
  15. 根据权利要求10所述的彩色滤光基板的制备方法，其中，步骤S104中，还包括对所述最终的黑色矩阵进行第二次后烘烤，第二次后烘烤的温度为200～250℃，时间为5～30min。
  16. 根据权利要求10所述的彩色滤光基板的制备方法，其中，所述感光性 黑色材料层的厚度为1～2.5μm。
  17. 根据权利要求10所述的彩色滤光基板的制备方法，其中，所述彩色光阻包括红色光阻、绿色光阻和蓝色光阻。
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