WO2017015974A1 - 量子棒膜的制造方法及量子棒发光显示装置 - Google Patents

量子棒膜的制造方法及量子棒发光显示装置 Download PDF

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Publication number
WO2017015974A1
WO2017015974A1 PCT/CN2015/085713 CN2015085713W WO2017015974A1 WO 2017015974 A1 WO2017015974 A1 WO 2017015974A1 CN 2015085713 W CN2015085713 W CN 2015085713W WO 2017015974 A1 WO2017015974 A1 WO 2017015974A1
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Prior art keywords
quantum rod
electric field
film
strip
substrate
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English (en)
French (fr)
Inventor
樊勇
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/771,176 priority Critical patent/US9618667B2/en
Publication of WO2017015974A1 publication Critical patent/WO2017015974A1/zh
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/14—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing polarised light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements

Definitions

  • the present invention relates to the field of display technology, and in particular to a quantum rod (Quantum) Rod, QR) method for producing a film and a quantum rod light-emitting display device.
  • Quantum Quantum
  • QR quantum rod
  • Quantum rods and quantum dots have the same nanometer size, and since electrons and holes are quantum confined, the continuous band structure becomes a discrete energy level structure with molecular characteristics, which can emit fluorescence after being excited.
  • the application of quantum rods generally involves the use of quantum rods to form optical thin films, ie, quantum rod films, to convert the light of certain wavelengths irradiated to the optical film into partially polarized light by utilizing the polarization characteristics of the quantum rods. .
  • the polarized light emitted through the quantum rod film has the strongest brightness in the long axis direction of the quantum rod, the uniformity of the long axis direction of the quantum rod is better, and the higher the brightness of the polarized light emitted, the quantum rod film is used. The more energy that can be saved by the illuminating display device.
  • the embodiments of the present invention provide a method for fabricating a quantum rod film and a quantum rod light-emitting display device, which can improve the uniformity of the long-axis direction of the quantum rod.
  • a method for manufacturing a quantum rod film includes: forming a transparent film on a substrate; and printing a transparent film by using a mask to form a plurality of strip grooves on the transparent film, Wherein the mask has a complementary pattern with the strip grooves, the length directions of the strip grooves are parallel to each other, and the width of the strip grooves is nanometer; a quantum rod layer is formed on the guiding film, the quantum rod
  • the layer comprises a curing gel and a quantum rod and an electric field sensing monomer doped in the curing glue; applying an electric field perpendicular to the surface of the substrate to the quantum rod layer, so that the electric field sensing monomer drives the long axis of the quantum rod under the action of the electric field
  • the directions are arranged along the length direction of the strip grooves; the curing gel is cured to fix the quantum rod; and a protective substrate is attached to the quantum rod layer.
  • the quantum rod film includes a PI guiding film and a polarizer.
  • a method for manufacturing a quantum rod film according to an embodiment of the present invention includes: forming a light transmissive film on a substrate; forming a plurality of strip grooves on the light transmissive film; forming a quantum rod layer on the guiding film,
  • the quantum rod layer comprises a curing gel and a quantum rod and an electric field sensing monomer doped in the curing glue; an electric field is applied to the quantum rod layer, so that the electric field sensing unit drives the quantum rod along the strip groove under the action of the electric field Curing the curing gel to fix the quantum rod.
  • the step of forming a plurality of strip-shaped grooves on the light-transmissive film comprises: stamping the light-transmissive film with a mask having a complementary pattern with the strip-shaped grooves to form a plurality of strip-shaped grooves.
  • the step of applying an electric field to the quantum rod layer comprises: causing the electric field-sensing monomer to drive the length of the quantum rod under the action of the electric field
  • the axial directions are arranged along the longitudinal direction of the strip grooves.
  • the step of applying an electric field to the quantum rod layer comprises: arranging the direction of the electric field perpendicular to the surface of the substrate.
  • the method further comprises: attaching a protective substrate to the quantum rod layer.
  • the quantum rod film includes a PI guiding film and a polarizer.
  • a quantum rod light-emitting display device includes a backlight module and a display panel disposed in a light-emitting direction of the backlight module, the display panel including a first substrate and a first surface attached to the first substrate a polarizer, a second substrate spaced apart from the first substrate and adjacent to the backlight module, a second polarizer attached to the outside of the second substrate, and a quantum rod film disposed between the first substrate and the second substrate, wherein the quantum rod film is located between the first substrate and the first polarizer, and comprises: a substrate; a light transmissive film on the substrate, the light transmissive film has a plurality of strip grooves; the quantum rod layer is located On the light transmissive film, and comprising a curing gel and a quantum rod and an electric field sensing monomer doped in the curing gel, the long axis direction of the quantum rod is parallel to the optical axis direction of the second polarizing plate, and the quantum rod is applied to the quantum rod layer
  • the strip-shaped grooves are formed by embossing the light-transmissive film with a mask having a complementary pattern.
  • the length directions of the strip-shaped grooves are parallel to each other, and the width of the strip-shaped grooves is on the order of nanometers, and the electric field-sensing monomer drives the long-axis direction of the quantum rods along the length direction of the strip-shaped grooves under the action of the electric field.
  • direction of the electric field is perpendicular to the surface of the substrate.
  • the method for manufacturing a quantum rod film and the quantum rod light-emitting display device by applying an electric field to the quantum rod layer, causes the electric field-sensing monomer to drive the quantum rods along the predetermined strip-shaped grooves under the action of the electric field, that is, By transferring the long axis direction of the quantum rod into the length direction of the strip groove, it is only necessary to ensure the uniformity of the length direction of the plurality of strip grooves in advance and it is easy to achieve, thereby improving the uniformity of the long axis direction of the quantum rod.
  • the brightness of the light on the light-emitting side of the quantum rod film is increased, thereby saving energy consumption of the display device.
  • FIG. 1 is a flow chart showing a method of fabricating an embodiment of a quantum rod film of the present invention
  • FIG. 2 is a schematic view showing a manufacturing scene of an embodiment of a quantum rod film of the present invention
  • FIG. 3 is a schematic exploded view showing an embodiment of a quantum rod film of the present invention.
  • Figure 4 is a cross-sectional view showing the structure of an embodiment of a quantum rod light-emitting display device of the present invention.
  • FIG. 1 is a flow chart showing a method of fabricating an embodiment of a quantum rod film of the present invention. As shown in FIG. 1, the manufacturing method of this embodiment includes the following steps:
  • Step S11 forming a light-transmissive film on the substrate.
  • the substrate 21 is used to form an optical film of a quantum rod light-emitting display panel and a quantum rod light-emitting display device, so that at least light is allowed to pass therethrough.
  • the substrate 21 can be made of glass or PET (Polyethylene). Terephthalate, polyethylene terephthalate or polyester chips, plastic and other materials.
  • the transparent film 22 of the present embodiment may be a PI (Polyimide) film or an optical film such as a polarizer.
  • the manner of forming the light-transmissive film 22 on the substrate 21 in a corresponding manner includes but is not limited to :Chemical vapor deposition (Chemical Vapor deposition, CVD), low pressure chemical vapor deposition (Low-pressure chemical vapor) Deposition,LPCVD),Plasma Enhanced Chemical Vapor Deposition, PECVD), sputtering, coating, vacuum evaporation.
  • Step 12 forming a plurality of strip-shaped grooves on the light-transmissive film.
  • the transparent film 22 may be embossed by using a mask 23 having a complementary pattern with the strip grooves 221, thereby forming a plurality of widths of nanometers (for example, a width of 20 nm).
  • the masking plate 23 is preferably made of a material that is not easily deformed when heated or compressed, and is easily processed into a plurality of strip-shaped grooves 221 of a nanometer order and can ensure a plurality of strip-shaped grooves 221 after processing. The error between the size and the preset size is the smallest.
  • the strip grooves 221 are used to control the long axis direction of the quantum rod, so that the length directions of all the strip grooves 221 are parallel to each other and the same as the long axis direction of the quantum rod.
  • a plurality of strip-shaped trenches 221 may be formed on the transparent film 22 by other methods, such as etching the transparent film 22 to obtain a plurality of strip-shaped trenches 221, or directly forming on the substrate 21.
  • a light transmissive film 22 having a plurality of strip grooves 221 may be formed on the transparent film 22 by other methods, such as etching the transparent film 22 to obtain a plurality of strip-shaped trenches 221, or directly forming on the substrate 21.
  • Step 13 Forming a quantum rod layer on the guiding film, the quantum rod layer comprising a curing glue and a quantum rod and an electric field sensing monomer doped in the curing glue.
  • the curing glue of the quantum rod 24 may be a light curing glue such as UV glue (Ultraviolet) Rays, shadowless, photosensitive or UV-curing adhesives, or thermosetting adhesives.
  • UV glue Ultraviolet
  • Step S14 applying an electric field to the quantum rod layer, so that the electric field sensing unit drives the quantum rods along the strip grooves under the action of the electric field.
  • This embodiment can apply a vertical electric field to the quantum rod layer 24 shown in FIG. 2, that is, the direction of the electric field applied to the quantum rod layer 24 (the direction indicated by the arrow in the figure) is set to be perpendicular to the surface of the substrate 21, thereby
  • the electric field sensing cells in the quantum rod layer 24 are caused to drive the long axis direction of the quantum rods 241 along the length direction of the strip grooves 221 under the action of the electric field, that is, the electric field sensing cells are in the electric field.
  • the quantum rod 241 is deflected by the action until the long axis direction of the quantum rod 241 coincides with the longitudinal direction of the strip groove 221 .
  • Step S15 curing the cured glue to fix the quantum rod.
  • a protective substrate 25 is attached to the quantum rod layer 24 by means of adhesive bonding or the like to obtain a quantum rod film 30 as shown in FIG.
  • the material for manufacturing the light-transmitting protective substrate 25 may be the same as or different from the material of the base 21.
  • the present embodiment essentially transfers the method of designing the long-axis direction of the quantum rod 241 to the length direction of the strip-shaped groove 221, because the length direction of the plurality of strip-shaped grooves 221 is uniform. Since it is easier to ensure, the uniformity of the long-axis direction of the quantum rod 241 can be improved, and the luminance of the polarized light on the light-emitting side of the quantum rod film 30 can be improved.
  • the quantum rod light-emitting display device 40 having the quantum rod film 30 shown in FIG. 4 includes a backlight module 41 and a display panel 42 disposed in a light-emitting direction of the backlight module 41.
  • the display panel 42 includes a first substrate. 421, a first polarizer 422 attached to the inner side of the first substrate 421, a second substrate 423 disposed at a distance from the first substrate 421, a second polarizer 424 attached to the outside of the second substrate 423, and a second polarizer 424 a quantum rod film 30 between a substrate 421 and a second substrate 423, wherein the second substrate 423 is disposed adjacent to the backlight module 41, and the quantum rod film 30 is located between the first substrate 421 and the first polarizer 422, and the quantum The long axis direction of the quantum rod in the rod film 30 is parallel to the transmission axis of the second polarizer 424.
  • the uniformity of the long-axis direction of the quantum rod film 30 is high, the luminance of the polarized light emitted from the backlight module 41 through the quantum rod film 30 is high, so that the energy consumption of the quantum rod light-emitting display device 40 can be saved.

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  • Optics & Photonics (AREA)
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Abstract

一种量子棒膜的制造方法，包括：在基体上形成一层透光膜(22)；在透光膜(22)上形成多个条状沟槽(221)；在导向膜上形成一量子棒层(24)，所述量子棒层(24)包括固化胶以及掺杂于固化胶内的量子棒(241)和电场感应单体；对量子棒层(24)施加电场，使得电场感应单体在电场的作用下带动量子棒沿条状沟槽(221)排列；固化固化胶，以固定量子棒(241)。提供具有由上述方法制得的量子棒膜的量子棒发光显示装置，基于此能够提高量子棒的长轴方向的一致性，从而提高显示亮度。

Description

量子棒膜的制造方法及量子棒发光显示装置
【技术领域】
本发明涉及显示技术领域，具体而言涉及一种量子棒（Quantum rod，QR）膜的制造方法及量子棒发光显示装置。
【背景技术】
量子棒和量子点（Quantum Dots，QDs）一样具有纳米尺寸，且由于电子和空穴被量子限域，连续的能带结构变成具有分子特性的分立能级结构，受激后可以发射荧光。当前，人们对量子棒的应用普遍在于利用量子棒形成光学薄膜即量子棒膜，以利用量子棒的偏光特性将照射到该光学薄膜的某些波长的光转化为另一种波长的部分偏振光。由于经量子棒膜发出的偏振光在量子棒的长轴方向上亮度最强，因此量子棒的长轴方向一致性越好，所发出的偏振光的亮度越高，则采用该量子棒膜的发光显示装置可以节省的能耗就越多。
【发明内容】
鉴于此，本发明实施例提供一种量子棒膜的制造方法及量子棒发光显示装置，能够提高量子棒的长轴方向的一致性。
本发明实施例提供的一种量子棒膜的制造方法，包括：在基体上形成一层透光膜；利用掩膜板压印透光膜以在透光膜上形成多个条状沟槽，其中所述掩膜板具有与条状沟槽互补图案，条状沟槽的长度方向彼此平行，且条状沟槽的宽度为纳米级；在导向膜上形成一量子棒层，所述量子棒层包括固化胶以及掺杂于固化胶内的量子棒和电场感应单体；对量子棒层施加方向垂直于基体的表面的电场，使得电场感应单体在电场的作用下带动量子棒的长轴方向沿条状沟槽的长度方向排列；固化固化胶，以固定量子棒；在量子棒层上贴附一保护基体。
其中，量子棒膜包括PI导向膜和偏光片。
本发明实施例提供的一种量子棒膜的制造方法，包括：在基体上形成一层透光膜；在透光膜上形成多个条状沟槽；在导向膜上形成一量子棒层，所述量子棒层包括固化胶以及掺杂于固化胶内的量子棒和电场感应单体；对量子棒层施加电场，使得电场感应单体在电场的作用下带动量子棒沿条状沟槽排列；固化固化胶，以固定量子棒。
其中，所述在透光膜上形成多个条状沟槽的步骤，包括：利用与条状沟槽具有互补图案的掩膜板压印透光膜，以形成多个条状沟槽。
其中，条状沟槽的长度方向彼此平行，且条状沟槽的宽度为纳米级，所述对量子棒层施加电场的步骤包括：使得电场感应单体在电场的作用下带动量子棒的长轴方向沿条状沟槽的长度方向排列。
其中，所述对量子棒层施加电场的步骤包括：将电场的方向设置成垂直于基体的表面。
其中，在所述固化固化胶的步骤之后，所述方法进一步包括：在量子棒层上贴附一保护基体。
其中，量子棒膜包括PI导向膜和偏光片。
本发明实施例提供的一种量子棒发光显示装置，包括背光模组以及设置于背光模组的出光方向上的显示面板，所述显示面板包括第一基板、贴附于第一基板内侧的第一偏光片、与第一基板相对间隔且靠近背光模组的第二基板、贴附于第二基板外侧的第二偏光片、以及设置于第一基板和第二基板之间的量子棒膜，其中，量子棒膜位于第一基板和第一偏光片之间，且包括：基体；位于基体上的一透光膜，所述透光膜上具有多个条状沟槽；量子棒层，位于透光膜上，且包括固化胶以及掺杂于固化胶内的量子棒和电场感应单体，量子棒的长轴方向与第二偏振片的出光轴方向平行，量子棒在对量子棒层施加电场时被电场感应单体在电场的作用下带动并沿条状沟槽排列，并由固化的固化胶固定。
其中，条状沟槽由与其具有互补图案的掩膜板压印透光膜形成。
其中，条状沟槽的长度方向彼此平行，且条状沟槽的宽度为纳米级，电场感应单体在电场的作用下带动量子棒的长轴方向沿条状沟槽的长度方向排列。
其中，电场的方向垂直于基体的表面。
本发明实施例的量子棒膜的制造方法及量子棒发光显示装置，通过对量子棒层施加电场，使得电场感应单体在电场的作用下带动量子棒沿预先设置的条状沟槽排列，即，将量子棒的长轴方向转嫁为条状沟槽的长度方向，只需预先确保多个条状沟槽的长度方向的一致性且极易达到，即可提高量子棒的长轴方向的一致性，提高在量子棒膜的出光侧的光的亮度，进而节省显示装置的能耗。
【附图说明】
图1是本发明的量子棒膜一实施例的制造方法的流程图；
图2是本发明的量子棒膜一实施例的制造场景示意图；
图3是本发明的量子棒膜一实施例的结构分解示意图；
图4是本发明的量子棒发光显示装置一实施例的结构剖视图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明所提供的示例性的实施例的技术方案进行清楚、完整地描述。
图1是本发明的量子棒膜一实施例的制造方法的流程图。如图1所示，本实施例的制造方法包括以下步骤：
步骤S11：在基体上形成一层透光膜。
如图2所示，基体21用于形成量子棒发光显示面板以及量子棒发光显示装置的光学膜片，因此其至少允许光透过，所述基体21的制造材质可以为玻璃、PET（Polyethylene Terephthalate，聚对苯二甲酸乙二醇酯或聚酯切片）、塑料等防水阻氧材质。
本实施例的透光膜22可以为PI（Polyimide，聚酰亚胺）导向膜，也可以是偏光片等光学薄膜，对应的形成方式在基体21上形成透光膜22的方式包括但不限于：化学气相沉积（Chemical vapor deposition，CVD）、低压化学气相沉积（Low-pressure Chemical vapor deposition，LPCVD）、等离子化学气相沉积（Plasma Enhanced Chemical vapor deposition，PECVD）、溅射、涂布、真空蒸镀。
步骤12：在透光膜上形成多个条状沟槽。
继续参阅图2所示，本实施例可以利用与条状沟槽221具有互补图案的掩膜板23压印所述透光膜22，从而形成多个宽度为纳米级（例如宽度为20纳米~200纳米）的条状沟槽221。其中，掩膜板23优选采用受热或受压时不易变形的材质制得，并且，较容易加工成纳米级的多个条状沟槽221且能够保证加工后的多个条状沟槽221的尺寸与预先设定尺寸的误差最小。
所述条状沟槽221用以控制量子棒的长轴方向，故所有条状沟槽221的长度方向彼此平行且与量子棒的长轴方向相同。
当然，本发明实施例也可以采用其他方式在透光膜22上形成多个条状沟槽221，例如刻蚀透光膜22以得到多个条状沟槽221，或者直接在基体21上形成具有多个条状沟槽221的透光膜22。
步骤13：在导向膜上形成一量子棒层，所述量子棒层包括固化胶以及掺杂于固化胶内的量子棒和电场感应单体。
量子棒24的固化胶可以是光固化胶，例如UV胶（Ultraviolet Rays，无影胶、光敏胶或紫外固化胶），也可以是热固化胶。
步骤S14：对量子棒层施加电场，使得电场感应单体在电场的作用下带动量子棒沿条状沟槽排列。
本实施例可以对图2所示的量子棒层24施加垂直方向电场，即，将对量子棒层24施加的电场的方向（图中箭头所示方向）设置成垂直于基体21的表面，从而使得量子棒层24中的电场感应单体在所述电场的作用下带动量子棒241的长轴方向沿条状沟槽221的长度方向排列，也就是说，电场感应单体在所述电场的作用下带动量子棒241偏转，直至量子棒241的长轴方向与条状沟槽221的长度方向一致。
步骤S15：固化所述固化胶，以固定量子棒。
进一步地，在量子棒层24上通过胶黏贴等方式贴附一保护基体25，即可得到如图3所示的量子棒膜30。其中，透光的保护基体25的制造材质既可以与基体21的制造材质相同，也可以不相同。
承上所述，本实施例实质上是将设计量子棒241的长轴方向的方法转嫁为设计条状沟槽221的长度方向的方法，由于多个条状沟槽221的长度方向的一致性较容易确保，因此可提高量子棒241的长轴方向的一致性，从而提高量子棒膜30的出光侧的偏振光的亮度。
结合图4所示的具有该量子棒膜30的量子棒发光显示装置40，包括背光模组41以及设置于背光模组41的出光方向上的显示面板42，所述显示面板42包括第一基板421、贴附于第一基板421内侧的第一偏光片422、与第一基板421相对间隔设置的第二基板423、贴附于第二基板423外侧的第二偏光片424、以及设置于第一基板421和第二基板423之间的量子棒膜30，其中，第二基板423靠近背光模组41设置，则量子棒膜30位于第一基板421和第一偏光片422之间，且量子棒膜30中的量子棒的长轴方向与第二偏光片424的透光轴平行。
由于量子棒膜30的长轴方向的一致性较高，背光模组41发出的光经过量子棒膜30出射后的偏振光的亮度较高，因此可以节省量子棒发光显示装置40的能耗。
应理解，以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (12)

  1. 一种量子棒膜的制造方法，其中，所述方法包括：
    在基体上形成一层透光膜；
    利用掩膜板压印所述透光膜以在所述透光膜上形成多个条状沟槽，其中所述掩膜板具有与所述条状沟槽互补图案，所述条状沟槽的长度方向彼此平行，且所述条状沟槽的宽度为纳米级；
    在所述导向膜上形成一量子棒层，所述量子棒层包括固化胶以及掺杂于所述固化胶内的量子棒和电场感应单体；
    对所述量子棒层施加方向垂直于所述基体的表面的电场，使得所述电场感应单体在所述电场的作用下带动所述量子棒的长轴方向沿所述条状沟槽的长度方向排列；
    固化所述固化胶，以固定所述量子棒；
    在所述量子棒层上贴附一保护基体。
  2. 根据权利要求1任意一项所述的方法，其中，所述量子棒膜包括PI导向膜和偏光片。
  3. 一种量子棒膜的制造方法，其中，所述方法包括：
    在基体上形成一层透光膜；
    在所述透光膜上形成多个条状沟槽；
    在所述导向膜上形成一量子棒层，所述量子棒层包括固化胶以及掺杂于所述固化胶内的量子棒和电场感应单体；
    对所述量子棒层施加电场，使得所述电场感应单体在所述电场的作用下带动所述量子棒沿所述条状沟槽排列；
    固化所述固化胶，以固定所述量子棒。
  4. 根据权利要求3所述的方法，其中，所述在所述透光膜上形成多个条状沟槽的步骤，包括：
    利用与所述条状沟槽具有互补图案的掩膜板压印所述透光膜，以形成所述多个条状沟槽。
  5. 根据权利要求3所述的方法，其中，所述条状沟槽的长度方向彼此平行，且所述条状沟槽的宽度为纳米级，所述对所述量子棒层施加电场的步骤包括：
    使得所述电场感应单体在所述电场的作用下带动所述量子棒的长轴方向沿所述条状沟槽的长度方向排列。
  6. 根据权利要求5所述的方法，其中，所述对所述量子棒层施加电场的步骤包括：
    将所述电场的方向设置成垂直于所述基体的表面。
  7. 根据权利要求3所述的方法，其中，在所述固化所述固化胶的步骤之后，所述方法进一步包括：
    在所述量子棒层上贴附一保护基体。
  8. 根据权利要求1任意一项所述的方法，其中，所述量子棒膜包括PI导向膜和偏光片。
  9. 一种量子棒发光显示装置，包括背光模组以及设置于所述背光模组的出光方向上的显示面板，其中，所述显示面板包括第一基板、贴附于所述第一基板内侧的第一偏光片、与所述第一基板相对间隔且靠近所述背光模组的第二基板、贴附于所述第二基板外侧的第二偏光片、以及设置于所述第一基板和所述第二基板之间的量子棒膜，其中，所述量子棒膜位于所述第一基板和所述第一偏光片之间，且包括：
    基体；
    位于所述基体上的一透光膜，所述透光膜上具有多个条状沟槽；
    量子棒层，位于所述透光膜上，且包括固化胶以及掺杂于所述固化胶内的量子棒和电场感应单体，其中所述量子棒的长轴方向与所述第二偏振片的透光轴方向平行，所述量子棒在对所述量子棒层施加电场时被所述电场感应单体在所述电场的作用下带动并沿所述条状沟槽排列，并由固化的所述固化胶固定。
  10. 根据权利要求9所述的量子棒发光显示装置，其中，所述条状沟槽由与其具有互补图案的掩膜板压印所述透光膜形成。
  11. 根据权利要求9所述的量子棒发光显示装置，其中，所述条状沟槽的长度方向彼此平行，且所述条状沟槽的宽度为纳米级，所述电场感应单体在所述电场的作用下带动所述量子棒的长轴方向沿所述条状沟槽的长度方向排列。
  12. 根据权利要求9所述的量子棒发光显示装置，其中，所述电场的方向垂直于所述基体的表面。
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