WO2017014050A1 - 基板処理装置、基板処理システム、および基板処理方法 - Google Patents
基板処理装置、基板処理システム、および基板処理方法 Download PDFInfo
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- WO2017014050A1 WO2017014050A1 PCT/JP2016/069998 JP2016069998W WO2017014050A1 WO 2017014050 A1 WO2017014050 A1 WO 2017014050A1 JP 2016069998 W JP2016069998 W JP 2016069998W WO 2017014050 A1 WO2017014050 A1 WO 2017014050A1
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- substrate
- catalyst
- processing
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- etching
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Definitions
- the present invention relates to a substrate processing apparatus, a substrate processing system, and a substrate processing method.
- a chemical mechanical polishing (CMP) device that polishes the surface of a substrate.
- CMP chemical mechanical polishing
- a polishing pad is affixed to the upper surface of a polishing table to form a polishing surface.
- the polishing surface of the substrate held by the top ring is pressed against the polishing surface and the polishing table and the top ring are rotated while supplying slurry as a polishing liquid to the polishing surface.
- the polishing surface and the surface to be polished are slidably moved relative to each other, and the surface to be polished is polished.
- planarization techniques including CMP
- CMP planarization techniques
- demands for polishing performance for example, flatness, polishing damage, and productivity
- CARE catalyst-based etching
- the CARE method in the presence of the treatment liquid, reactive species with the surface to be treated are generated only from the vicinity of the catalyst material in the vicinity of the catalyst material. In the contact surface, an etching reaction of the surface to be processed can be selectively generated.
- the convex portion and the catalyst material are brought close to or in contact with each other, whereby the convex portion can be selectively etched, and thus the surface to be processed can be flattened.
- the present CARE method has been proposed for planarization of next-generation substrate materials such as SiC and GaN, which are chemically stable and therefore cannot be easily planarized with high efficiency by CMP (for example, Patent Document 1 below). ⁇ 4).
- CMP for example, Patent Document 1 below.
- Patent Document 1 next-generation substrate materials
- Patent Document 5 there is a possibility of application to semiconductor device materials such as a silicon oxide film on a silicon substrate.
- the substrate In a substrate processing process that involves flattening of different film interfaces, if the processing target film is different between the initial stage and the final stage of the process, or if the process requirements are different, the substrate is flattened under the same processing conditions at the initial stage and the final stage of the substrate processing process. In some cases, productivity, process performance such as defect, and productivity such as throughput are not always sufficient.
- a method for treating a substrate by bringing the substrate into contact with a catalyst in the presence of a treatment liquid.
- the processing condition is changed so that the substrate is processed at a low speed during the processing of the same substrate as the step of processing the substrate under a predetermined processing condition for processing the substrate at a high speed. Steps.
- the substrate can be processed under optimum conditions.
- a method for treating a substrate by bringing a substrate containing SiO 2 into contact with a catalyst in the presence of a treatment liquid includes a step of supplying a hydrofluoric acid solution to the surface of the substrate and etching SiO 2 of the substrate with the hydrofluoric acid solution.
- a hydrofluoric acid solution to the surface of the substrate and etching SiO 2 of the substrate with the hydrofluoric acid solution.
- FIG. 1 is a schematic plan view of a substrate processing apparatus of a substrate processing system as one embodiment. It is a side view of the substrate processing apparatus shown in FIG. It is a schematic side view which shows the component of the catalyst holding part as one Example. It is a schematic side view which shows the component of the catalyst holding part as one Example. It is a schematic bottom view which shows the component shown in FIG. It is a schematic side view which shows the component of the catalyst holding part as one Example. It is a schematic side view of the catalyst holding part as one Example. It is a schematic side view of the catalyst holding part as one Example. It is a schematic side view which shows the catalyst holding part as one Example. It is a schematic side view of the substrate processing apparatus as one embodiment. It is a schematic side view of the substrate processing apparatus as one embodiment.
- a nickel catalyst at each pH of the processing solution is a graph showing the etching rate of the SiO 2 in the case of changing the voltage applied to the catalyst.
- Using a platinum catalyst, in the pH of the processing solution is a graph showing the etching rate of the SiO 2 in the case of changing the voltage applied to the catalyst.
- FIG. 1 is a schematic plan view of a substrate processing apparatus 10 of a substrate processing system as an embodiment of the present invention.
- FIG. 2 is a side view of the substrate processing apparatus 10 shown in FIG.
- the substrate processing apparatus 10 is an apparatus that performs an etching process on a semiconductor device material (processed region) on a substrate using the CARE method.
- the substrate processing system includes a substrate processing apparatus 10, a substrate cleaning unit configured to clean the substrate, and a substrate transfer unit that transfers the substrate. Moreover, you may also provide a board
- the substrate transport unit is configured to be able to transport a wet substrate and a dry substrate separately.
- the substrate processing system may include film forming apparatuses such as a chemical vapor deposition (CVD) apparatus, a sputtering apparatus, a plating apparatus, and a coater apparatus.
- the substrate processing apparatus 10 is configured as a unit separate from the CMP apparatus. Since the substrate cleaning unit, the substrate transfer unit, and the CMP apparatus are well-known techniques, their illustration and description are omitted below.
- the substrate processing apparatus 10 shown in FIG. 1 includes a substrate holding unit 20, a catalyst holding unit 30, a processing liquid supply unit 40, a swing arm 50, a conditioning unit 60, and a control unit 90. .
- the substrate holding unit 20 is configured to hold a wafer Wf as a kind of substrate.
- the substrate holding unit 20 holds the wafer Wf so that the processing surface of the wafer Wf faces upward.
- the substrate holding unit 20 has a vacuum suction mechanism having a vacuum suction plate that vacuum-sucks the back surface (surface opposite to the surface to be processed) of the wafer Wf as a mechanism for holding the wafer Wf. I have.
- a backing material may be attached to the surface of the suction plate, and the wafer Wf may be sucked through the backing material.
- the mechanism for holding the wafer Wf can be any known mechanism, for example, a clamp mechanism that clamps the front and back surfaces of the wafer Wf at at least one peripheral edge of the wafer Wf.
- a roller chuck mechanism that holds the side surface of the wafer Wf at at least one of the peripheral portions of the wafer Wf may be used.
- the substrate holding unit 20 is configured to be rotatable about the axis AL1 by a driving unit motor and an actuator (not shown). Further, in this figure, the substrate holding part 20 includes a wall part 21 extending upward in the vertical direction over the entire circumferential direction outside the region for holding the wafer Wf. As a result, the processing liquid PL can be held in the wafer surface, and as a result, the amount of the processing liquid PL used can be reduced.
- the wall portion 21 is fixed to the outer periphery of the substrate holding portion 20, but may be configured separately from the substrate holding portion.
- the wall 21 may move up and down. By enabling the vertical movement, it is possible to change the holding amount of the processing liquid PL. For example, when cleaning the substrate surface after the etching process, the wall 21 is lowered to bring the cleaning liquid out of the wafer Wf. Emission can be performed efficiently.
- the catalyst holding unit 30 is configured to be rotatable about the axis AL2 by a drive unit, that is, an actuator (not shown).
- a motor and an air cylinder for sliding the catalyst 31 of the catalyst holding unit 30 in contact with the wafer Wf are provided in a swing arm 50 (not shown).
- the processing liquid supply unit 40 is configured to supply the processing liquid PL to the surface of the wafer Wf.
- processing liquid supply unit 40 a plurality of processing liquid supply units 40 may be arranged, and in this case, different processing liquids PL may be supplied from each processing liquid supply unit. Further, when cleaning the surface of the wafer Wf in the substrate processing apparatus 10 after the etching process, a cleaning chemical or water may be supplied from the processing liquid supply unit 40. Further, the processing liquid supply unit 40 may be configured to supply the processing liquid PL from the surface of the catalyst 31 through the inside of the catalyst holding unit 30 as described later.
- the swing arm 50 is configured to be swingable about a rotation center 51 by a drive unit, that is, an actuator (not shown), and is configured to be movable up and down.
- a catalyst holding unit 30 is rotatably attached to the tip of the swing arm 50 (the end opposite to the rotation center 51).
- FIG. 3 4, 6, and 7 are schematic cross-sectional side views illustrating the configuration of the catalyst holding unit 30 as one embodiment according to the present disclosure.
- the catalyst holding unit 30 in this embodiment includes a disc holder unit 30-70 shown in FIG. 3 and a catalyzer disc unit 30-72 shown in FIG. 4 that can be attached to and exchanged with the disc holder unit 30-70.
- FIG. 5 is a schematic plan view of the catalyzer disk portion 30-72 shown in FIG.
- FIG. 7 is a figure which shows the state in which these were attached.
- the disk holder portion 30-70 has a head 30-74. In the center of the head 30-74, a processing liquid supply passage 30-40, a wiring for a catalyst electrode, and a wiring for a counter electrode extend.
- the head 30-74 is attached to the swing arm 50 so that the head 30-74 can rotate via a gimbal mechanism 30-32 (for example, a spherical plain bearing).
- a gimbal mechanism 30-32 for example, a spherical plain bearing.
- the catalyzer disk portion 30-72 has a catalyst holding member 32 (for example, an elastic member 32) and a catalyst 31 held by the catalyst holding member 32.
- catalyst 31 is electrically connected to catalyst electrodes 30-49.
- a counter electrode 30-50 is disposed outside the catalyst holding member 32.
- the catalyst wiring and counter electrode wiring of the disk holder section 30-70 are electrically connected to the catalyst electrode 30-49 and the counter electrode 30-50, respectively, when the catalyzer disk section 30-72 is connected. .
- a voltage can be applied between the catalyst electrode 30-49 and the counter electrode 30-50 by an external power source.
- the catalyzer disk portion 30-72 is formed with a wall portion 30-52 surrounding the catalyst holding member 32 and the catalyst 31 with a space therebetween. In a state where the catalyst 31 and the wafer Wf are in contact with each other, the wall 30-52 defines a processing liquid holding unit that holds the processing liquid PL.
- a contact probe 30-76 as shown in FIG. 6 is used for electrical connection.
- the treatment liquid supply passage 30-40 extends through the catalyst holding member 32 of the catalyzer disc portion 30-72, and the surface of the catalyst 31 To the supply port 30-42.
- a catalyst temperature control mechanism for controlling the temperature of the catalyst 31 can be provided.
- a Peltier element can be used.
- FIG. 8 is a schematic side view showing the catalyst holding unit 30 as one embodiment.
- the catalyst 31 is held on the surface of the elastic member 32.
- a support 32-4 is disposed on the surface of the elastic member 32 opposite to the side on which the catalyst 31 is held.
- a Peltier element 32-6 is attached to the support 32-4.
- the support 32-4 is preferably a material having high thermal conductivity, and can be formed of, for example, metal or ceramics.
- the etching rate can be increased by raising the temperature of the catalyst 31 using the Peltier element 32-6.
- the etching rate can be lowered by cooling the catalyst 31 using the Peltier element 32-6.
- the hardness of the elastic member 32 can be increased, and the level difference elimination property by etching can be improved.
- both the etching rate and the step elimination performance can be improved. Note that the catalyst temperature control mechanism shown in FIG. 8 may be applied to the catalyst holding unit 30 shown in FIGS.
- the conditioning unit 60 is configured to condition the surface of the catalyst 31 at a predetermined timing.
- the conditioning unit 60 is disposed outside the wafer Wf held by the substrate holding unit 20.
- the catalyst 31 held by the catalyst holding unit 30 can be disposed on the conditioning unit 60 by the swing arm 50.
- the control unit 90 controls the overall operation of the substrate processing apparatus 10. Further, the control unit 90 also controls parameters relating to the etching processing conditions for the wafer Wf. Examples of such parameters include (1) contact load of the catalyst 31 with respect to the wafer Wf, (2) relative speed between the catalyst 31 and the wafer Wf, for example, the number of rotations of the substrate holder 20, the angular rotation speed, and the catalyst holding. Various motion conditions such as the number of rotations of the unit 30 and the swing speed of the swing arm 50, (3) type of the processing solution PL, (4) pH of the processing solution PL, (5) flow rate of the processing solution PL, (6 ) Bias voltage applied to the catalyst 31, (7) treatment temperature, and (8) type of catalyst. By adjusting these etching processing conditions, the etching processing speed can be adjusted. Further, the control unit 90 also controls parameters related to the conditioning conditions of the catalyst surface in the conditioning unit 60.
- the contact area between the catalyst 31 and the wafer Wf can be adjusted to some extent by adjusting the contact load of the catalyst 31 with respect to the wafer Wf. Since the surface of the catalyst 31 has minute irregularities, the contact area between the catalyst 31 and the wafer Wf can be increased by increasing the contact load up to a certain range, and the etching processing speed can be increased to a certain extent. can do.
- the processing liquid PL enters and exits between the catalyst 31 and the wafer Wf, so the relative speed is increased to a certain extent. Thus, the etching processing speed can be increased.
- the relative speed between the catalyst 31 and the wafer Wf can be adjusted by changing the rotation number of the catalyst holding unit 30, the rotation of the substrate holding unit 20, and the swing speed of the swing arm 50.
- the rotation speed of the catalyst holding unit 30 and the substrate holding unit 20 can be set to an arbitrary rotation speed between 0 rpm and 500 rpm, for example. In general, if the rotational speed is too high, the processing liquid PL is likely to be discharged out of the wafer Wf. If the rotational speed is too low, the processing liquid PL is not sufficiently spread in the wafer Wf plane.
- the rotational speeds of the catalyst holding unit 30 and the substrate holding unit 20 are preferably in the range of 10 rpm to 200 rpm.
- the swing speed of the swing arm 50 can be set to an arbitrary speed between 0 mm / sec and 250 mm / sec, for example.
- the processing amount (etching amount) of the workpiece (wafer Wf) is proportional to the proximity or contact time between the catalyst material and the workpiece. Therefore, in an apparatus in which the size of the catalyst 31 is smaller than the size of the wafer Wf, the change in the swing speed of the catalyst holding unit 30 affects the processing speed and the processing speed distribution. For example, when the swinging speed of the catalyst holding unit 30 is low, the contact time increases at the point where the catalyst holding unit 30 in the wafer Wf plane passes, and the throughput of the wafer Wf increases.
- the etching rate varies depending on the type of the processing liquid PL.
- the etching rate can also be adjusted by adjusting the pH of the treatment liquid PL.
- FIG. 13 is a graph showing the etching rate of SiO 2 when a nickel catalyst is used and the voltage applied to the catalyst is changed at each pH of the treatment liquid PL (potassium hydroxide solution).
- the etching rate can be adjusted by changing the pH of the treatment liquid PL.
- the etching rate can be adjusted by adjusting the bias voltage applied to the catalyst.
- the voltage applied to the catalyst 31 can be changed by adjusting the voltage between the catalyst electrode 30-49 and the counter electrode 30-50 of the catalyst holding unit 30 shown in FIG. it can.
- the etching rate can be adjusted by adjusting the processing temperature during the etching process.
- the etching rate can be adjusted by adjusting the temperature of the processing liquid PL and / or the temperature of the substrate holder.
- the temperature of the catalyst can be adjusted by the catalyst temperature control mechanism using the Peltier element 32-6 described above with reference to FIG. 8, and the temperature of the wafer Wf is controlled by the substrate temperature control unit 121 described later. can do.
- the temperature of the processing liquid PL may be adjusted.
- the etching rate can be adjusted by changing the type of catalyst.
- the type of catalyst for example, a noble metal, a transition metal, a ceramic solid catalyst, a basic solid catalyst, an acidic solid catalyst, or the like can be used.
- FIG. 9 shows a schematic configuration of the substrate processing apparatus 110 as an embodiment.
- a substrate temperature control unit 121 is disposed inside the substrate holding unit 120.
- the substrate temperature control unit 121 is a heater, for example, and is configured to control the temperature of the wafer Wf.
- the substrate temperature control unit 121 adjusts the temperature of the wafer Wf to a desired temperature. Since the CARE method is chemical etching, the etching rate depends on the substrate temperature.
- the etching rate can be changed according to the substrate temperature, and as a result, the etching rate and its in-plane distribution can be adjusted.
- a plurality of heaters are concentrically arranged, and the temperature of each heater may be adjusted.
- a single heater may be helically arranged in the substrate holding unit 120.
- the substrate processing apparatus 110 may include a processing liquid temperature adjusting unit that adjusts the temperature of the processing liquid PL to a predetermined temperature.
- the catalyst holding unit 30 may be provided with a catalyst temperature control mechanism for adjusting the temperature of the catalyst 31.
- the Peltier element 32-6 described with reference to FIG. 8 can be used.
- the etching rate can be adjusted by adjusting the processing solution temperature.
- the temperature of the processing liquid PL may be adjusted to a predetermined temperature within a range of 10 ° C. or more and 60 ° C. or less, for example.
- the etching performance can be stabilized.
- the substrate processing apparatus 10 may include a plurality of catalyst holding units 30.
- the substrate processing apparatus 10 may include a mechanism for performing chemical mechanical polishing (CMP) in addition to the catalyst holding unit 30.
- CMP chemical mechanical polishing
- a CMP mechanism a CMP polishing pad having the same size as the catalyst holding unit 30 according to the present disclosure is pressed against the wafer Wf by a mechanism similar to the swing arm 50, and the wafer Wf is polished while supplying the polishing liquid. It can be a mechanism. Since the conventional CMP mechanism can be used, it will not be described in detail in this paper.
- the polishing by the CMP mechanism and the etching process by the CARE method may be performed simultaneously or continuously. By combining the polishing by CMP and the etching process by the CARE method, the processing speed of the wafer Wf can be improved.
- FIG. 10 shows a schematic configuration of a substrate processing apparatus 410 as one embodiment.
- the substrate processing apparatus 410 includes a monitoring unit 480, and the control unit 490 includes a parameter changing unit 491.
- the monitoring unit 480 monitors the etching processing state of the processing region of the wafer Wf.
- the monitoring unit 480 is configured to be movable in a horizontal direction to a specific position on the wafer Wf by an actuator.
- the monitoring unit 480 may be fixed at a specific position, but may be moved within the surface of the wafer Wf during the etching process. When the monitoring unit 480 moves in the plane of the wafer Wf, the monitoring unit 480 may be moved in conjunction with the catalyst holding unit 30.
- the configuration of the monitoring unit 480 differs depending on the material of the region to be processed. Moreover, when a to-be-processed area
- the monitoring unit 480 may be configured as an eddy current monitoring unit. Specifically, the monitoring unit 480 generates a eddy current in the wafer Wf by causing a high-frequency current to flow through a sensor coil disposed in the vicinity of the surface of the wafer Wf, and a conductive metal film formed on the wafer Wf. An induced magnetic field is generated. Since the eddy current generated here and the resultant impedance calculated thereby change according to the thickness of the metal film, the monitoring unit 480 can monitor the etching process state using such change. is there.
- the monitoring unit 480 is not limited to the above-described configuration, and can have various configurations.
- the monitoring unit 480 may irradiate light toward the processing region of the wafer Wf and detect reflected light. Specifically, the reflected light that is reflected from the surface of the processing region of the wafer Wf and the reflected light that is reflected after passing through the processing layer of the wafer Wf is superimposed and received.
- the intensity of the reflected light changes depending on the film thickness of the layer to be processed, the etching process state can be monitored based on the change.
- the monitoring unit 480 may use at least one of a photocurrent type, a photoluminescence light type, and a Raman light type.
- a photocurrent method when the surface of the wafer Wf is irradiated with excitation light, the amount of etching on the surface of the wafer Wf is measured by measuring the value of the current flowing through a conductor connecting the wafer Wf and the metal wiring provided on the substrate holding unit 20. taking measurement.
- the photoluminescence light type measures the amount of etching on the surface of the wafer Wf by measuring the photoluminescence light emitted from the surface when the surface of the wafer Wf is irradiated with excitation light.
- the Raman light method the surface of the wafer Wf is irradiated with visible monochromatic light, the Raman light contained in the reflected light from the surface is measured, and the etching amount of the surface of the wafer Wf is measured.
- the monitoring unit 480 may monitor the etching process state based on the torque current of the driving unit when the substrate holding unit 220 and the catalyst holding unit 30 move relative to each other. According to such a form, it is possible to monitor the friction state generated by the contact between the semiconductor material of the substrate and the catalyst via the torque current, for example, the change in the uneven state of the semiconductor material on the surface to be processed and other materials The etching state can be monitored by the change of the torque current accompanying the exposure of.
- the monitoring unit 480 can be a vibration sensor provided in the catalyst holding unit 30.
- a vibration sensor detects vibration when the substrate holding unit 220 and the catalyst holding unit 30 move relatively.
- the vibration state changes due to the change of the frictional state between the wafer Wf and the catalyst 31. By detecting this change in vibration with a vibration sensor, the processing state of the wafer Wf can be detected.
- the etching process state monitored in this manner is reflected by the parameter changing unit 491 in the processing of the wafer being processed or the next wafer Wf in the substrate processing apparatus 10.
- the parameter changing unit 491 changes a control parameter related to the etching process condition of the wafer being processed or the next wafer based on the etching process state monitored by the monitoring unit 480.
- the parameter changing unit 491 may reduce the difference based on the difference between the thickness distribution of the layer to be processed obtained based on the monitoring result of the monitoring unit 480 and a predetermined target thickness distribution. Change control parameters. According to this configuration, it is possible to feed back the monitoring result of the monitoring unit 480 and improve the etching characteristics in the processing of the wafer being processed or the next wafer.
- the control unit 490 may feed back the monitoring result of the monitoring unit 480 to the processing of the wafer Wf being processed.
- the difference between the thickness distribution of the processing region obtained based on the monitoring result of the monitoring unit 480 and the predetermined target thickness distribution is within a predetermined range (ideally zero).
- the parameters within the processing conditions of the substrate processing apparatus 10 may be changed during processing.
- the monitoring result obtained by the monitoring unit 480 can function not only as feedback to the processing conditions described above but also as an end point detection unit for detecting the end point of the processing.
- the catalyst 31 includes two or more types of individual catalysts.
- the catalyst 31 may be a mixture (for example, an alloy) or a compound (for example, an intermetallic compound) including two types of catalysts.
- the wafer Wf can be etched uniformly or at a desired selection ratio when two or more different surfaces to be processed are formed according to the region of the wafer Wf.
- the catalyst 31 includes a region made of an acidic solid catalyst for Cu, And a region made of platinum for SiO 2 .
- ozone water for Cu and acid for SiO 2 may be used as the treatment liquid PL.
- a group III-V metal for example, GaAs
- the catalyst 31 is III- a region made of an iron for group V metal, and a region made of platinum or nickel for SiO 2, may be provided with a.
- ozone water for group III-V metal and acid for SiO 2 may be used for the treatment liquid PL.
- the substrate processing apparatus 10 may include a plurality of catalyst holding units 30.
- Each of the plurality of catalyst holding units 30 may hold different types of catalysts.
- the first catalyst holding unit 30 may hold a catalyst 31 made of an acidic solid catalyst
- the second catalyst holding unit 30 may hold a catalyst 31 made of platinum.
- the two catalyst holding units 30 can be configured to scan only the corresponding material layer on the wafer Wf. According to such a configuration, the first catalyst holding unit 30 and the second catalyst holding unit 30 are used sequentially or simultaneously, and the processing liquid PL corresponding to the catalyst holding unit 30 to be used is supplied, so that it is more efficient. Can be processed. As a result, the processing capacity per unit time can be improved.
- different types of processing liquids PL may be sequentially supplied.
- the wafer Wf can be etched uniformly or at a desired selection ratio when two or more different surfaces to be processed are formed according to the region of the wafer Wf.
- the catalyst holding unit 30 may hold a catalyst made of platinum.
- the substrate processing apparatus 10 first supplies a neutral solution or a solution containing Ga ions as the processing liquid PL to etch the group III-V metal layer of the wafer Wf, and then uses the processing liquid PL as the processing liquid PL.
- An acid may be supplied to etch the SiO 2 layer of the wafer Wf.
- the substrate processing apparatus 10 may include a plurality of catalyst holding units 30 that hold the same type of catalyst.
- the plurality of catalyst holding units 30 may be used simultaneously. According to this configuration, the processing capacity per unit time can be improved.
- the wafer Wf is held by the substrate holding unit 20 by vacuum suction from the substrate transfer unit.
- the processing liquid supply unit 40 supplies the processing liquid PL.
- the processing region of the wafer Wf and the catalyst 31 are moved by the vertical movement of the catalyst holding unit 30.
- the contact pressure is adjusted to a predetermined contact pressure.
- the relative movement between the substrate holding unit 20 and the catalyst holding unit 30 is started at the same time as or after the contact operation.
- the relative movement is realized by the rotation of the substrate holding unit 20, the rotation of the catalyst holding unit 30, and the swinging motion by the swinging arm 50.
- the relative movement between the substrate holding unit 20 and the catalyst holding unit 30 is a rotational motion, a translational motion, an arc motion, a reciprocating motion, a scrolling motion, and an angular rotation of at least one of the substrate holding unit 20 and the catalyst holding unit 30. It can be realized by at least one of the movements (movements rotating by a predetermined angle of less than 360 degrees).
- the processing region of the wafer Wf can be composed of any single or a plurality of materials.
- an insulating film typified by SiO 2 or Low-k material
- a wiring metal typified by Cu or W
- the material of the catalyst 31 examples include noble metals, transition metals, ceramic solid catalysts, basic solid catalysts, and acidic solid catalysts.
- the treatment liquid PL can be, for example, oxygen-dissolved water, ozone water, acid, alkali solution, H 2 O 2 water, hydrofluoric acid solution, or the like.
- the catalyst 31 and the processing liquid PL can be set as appropriate depending on the material of the processing area of the wafer Wf.
- the material of the region to be treated is Cu
- an acidic solid catalyst may be used as the catalyst 31
- ozone water may be used as the treatment liquid PL.
- platinum or nickel may be used for the catalyst 31 and acid may be used for the treatment liquid PL.
- the material of the region to be treated is a group III-V metal (for example, GaAs)
- iron may be used for the catalyst 31 and H 2 O 2 water may be used for the treatment liquid PL.
- a plurality of catalysts and processing solutions PL may be used for each material.
- Specific operations include (1) operation with a single catalyst holding unit in which a plurality of catalysts are arranged, and (2) operation with a plurality of catalyst holding units in which different catalysts are arranged.
- (1) may be a mixture or compound containing a plurality of catalyst materials.
- the treatment liquid PL when the catalyst side is in the form of (1), a mixture of components suitable for etching of the material to be etched by the individual catalyst materials may be used as the treatment liquid PL.
- the treatment liquid PL suitable for etching the material to be etched may be supplied in the vicinity of each catalyst holding portion.
- the catalyst 31 is smaller than the wafer Wf, when etching the entire surface of the wafer Wf, the catalyst holding unit 30 swings on the entire surface of the wafer Wf.
- etching occurs only at the contact portion with the catalyst. Therefore, the distribution in the wafer surface of the contact time between the wafer Wf and the catalyst 31 greatly affects the distribution in the wafer surface of the etching amount.
- etching occurs only at the contact point between the wafer Wf and the catalyst 31, and no etching occurs at other contact points between the wafer Wf and the catalyst 31. For this reason, since only the convex part of the wafer Wf having irregularities is selectively removed chemically, a flattening process can be performed. Further, since the wafer Wf is chemically processed, damage to the processed surface of the wafer Wf hardly occurs. Theoretically, the wafer Wf and the catalyst 31 may not necessarily be in contact with each other and may be close to each other. In this case, proximity can be defined as that the etchant generated by the catalytic reaction is close enough to reach the region to be processed of the wafer Wf.
- the separation distance between the wafer Wf and the catalyst 31 can be set to 50 nm or less, for example.
- FIGS. 15 and 16 are schematic cross-sectional views showing the state of substrate processing as one embodiment.
- 15 and 16 show a part of the planarization process of the STI process.
- FIG. 15 is a schematic side view showing an initial state of the planarization process.
- the planarized wafer Wf has a stepped SiO 2 film on the surface. In the illustrated example, the step of SiO 2 having a step is eliminated, and the wafer Wf is etched until the SiN layer under the step is exposed.
- FIG. 17 is a diagram showing the flow of processing in the STI process shown in FIGS. 15 and 16.
- the wafer Wf is held by the substrate holder 20 (S100).
- the SiO 2 step is etched as fast as possible on the wafer W held on the substrate holder 20 (S102).
- Specific processing parameters include (1) contact load of the catalyst 31 with respect to the wafer Wf, (2) relative speed between the catalyst 31 and the wafer Wf, (3) type of the processing liquid PL, and (4) processing liquid PL.
- the pH of (5), the flow rate of the processing solution PL, (6) the bias voltage applied to the catalyst 31, (7) the processing temperature, and (8) the type of the catalyst are adjusted so as to increase the etching rate.
- the processing parameters are as follows: contact load: 210 hPa, relative speed: 0.4 m / s, type of processing solution: citric acid solution, processing solution pH: 3, processing solution flow rate: 500 mL / min, bias voltage: +1 0.0 V, treatment temperature: 50 ° C., catalyst type: platinum.
- the processing liquid PL may be supplied from the outside of the catalyst holding unit 30 as shown in FIGS. 1 and 2, or may be supplied from the inside of the catalyst holding unit as shown in FIG. Good. Further, a bias voltage may be applied to the catalyst 31. Specifically, a predetermined voltage can be applied between the catalyst electrode 30-49 and the counter electrode 30-50 in the catalyst holding unit shown in FIG.
- FIG. 16 is a schematic side view showing the final state of the planarization process.
- the elimination of the SiO 2 step can be detected by the monitoring unit 480 described above. Alternatively, the processing time is predetermined has elapsed, it may be determined that the step of SiO 2 has been eliminated.
- the SiO 2 film is thin and close to the SiN film to be exposed. Therefore, until the SiN film is completely exposed, the SiO 2 film is completely exposed. It is desirable to perform the etching process at a low speed.
- the processing parameter is changed so as to etch at a lower speed than in the initial stage of the process, and the etching process is performed at a lower speed (S104).
- the treatment parameters are as follows: contact load: 70 hPa, relative speed: 0.1 m / s, treatment liquid type: potassium hydroxide solution, treatment liquid pH: 11, treatment liquid flow rate: 100 mL / min, bias voltage: 0 V, treatment temperature: 20 ° C., catalyst type: platinum.
- FIG. 18 is a diagram showing another example in which the etching process condition is changed during the processing of the wafer Wf to perform the etching process on the wafer Wf.
- the example shown in FIG. 18 is an example in which a SiO 2 film having a step is formed on Si, and SiO 2 is etched away until the Si surface is exposed by eliminating the SiO 2 step. It is.
- SiO 2 is isotropically etched using a hydrofluoric acid solution (HF), and at the same time, the step of SiO 2 is simultaneously eliminated by the CARE method.
- HF hydrofluoric acid solution
- the etching with the hydrofluoric acid solution is performed until the bottom of the SiO 2 groove is flush with the surface of the Si.
- the etching with the hydrofluoric acid solution is terminated, and the remaining steps are eliminated only by the CARE method.
- the etching with the hydrofluoric acid solution and the step elimination by the CARE method are simultaneously performed, but each is continuously performed as shown in FIGS. 18 (a) and 18 (b). You may do it. Accordingly, it is possible to suppress deterioration in processing performance such as mixing of a hydrofluoric acid solution and a solution used in the CARE method to generate a reaction product and generate scratches.
- the SiO 2 step is eliminated by the CARE method to flatten the SiO 2 film.
- SiO 2 is isotropically etched using a hydrofluoric acid solution (HF) to expose Si.
- HF hydrofluoric acid solution
- SiO 2 is isotropically etched using a hydrofluoric acid solution (HF).
- etching is performed with a hydrofluoric acid solution until the bottom of the SiO 2 groove is flush with the Si surface.
- the step of SiO 2 is eliminated by CARE method to expose Si.
- a method of monitoring the etching process state based on the torque current of the driving unit when the substrate holding unit 220 and the catalyst holding unit 30 move relative to each other may be applied. It becomes possible.
- the etching process conditions may be changed during the process as described above.
- Embodiment 1 there is provided a method of treating a substrate by bringing the substrate into contact with a catalyst in the presence of a treatment liquid.
- the processing condition is changed so that the substrate is processed at a low speed during the processing of the same substrate as the step of processing the substrate under a predetermined processing condition for processing the substrate at a high speed. Steps.
- this mode for example, when the processing target film is different between the initial stage and the final stage of the substrate processing process or when the process requirements are different, the substrate can be processed under optimum conditions.
- the step of changing the processing conditions includes (1) a contact load of the catalyst with respect to the substrate, and (2) a relative between the catalyst and the substrate. Speed, (3) type of the processing liquid, (4) pH of the processing liquid, (5) flow rate of the processing liquid, (6) bias voltage applied to the catalyst, (7) processing temperature, and (8) the above Changing at least one of the catalyst types.
- appropriate substrate processing conditions can be realized by changing parameters of various processing conditions.
- Mode 3 According to the mode 3, in the method of the mode 1 or the mode 2, the step of monitoring the processing state of the substrate being processed, and the step of changing the processing condition according to the processing state of the substrate And having. According to this aspect, the processing conditions for the substrate can be changed at an optimal timing according to the processing state of the substrate.
- Mode 4 in the method according to any one of modes 1 to 3, after a predetermined time has elapsed since the processing of the substrate under the predetermined processing conditions was started, Changing the processing conditions.
- this mode for example, by determining the timing for changing from the high-speed processing condition to the low-speed processing condition by an experiment or the like in advance, the optimal condition can be obtained without monitoring the processing state of the substrate being processed.
- the substrate can be processed. Further, the processing state of the substrate being processed may be monitored, and the processing conditions may be changed after a predetermined time has elapsed and / or when the predetermined processing state is reached.
- the method of any one of Embodiments 1 to 4 further includes the step of polishing the substrate by chemical mechanical polishing.
- Mode 6 there is provided a method of treating a substrate by bringing a substrate containing SiO 2 into contact with a catalyst in the presence of a treatment liquid.
- Such a method includes a step of supplying a hydrofluoric acid solution to the surface of the substrate and etching SiO 2 of the substrate with the hydrofluoric acid solution.
- the substrate can be processed quickly.
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Abstract
Description
20…基板保持部
21…壁部
30…触媒保持部
30-40…処理液供給通路
30-42…供給口
30-49…触媒電極
30-50…カウンター電極
30-52…壁部
30-70…ディスクホルダ部
30-72…キャタライザディスク部
30-74…ヘッド
30-76…コンタクトプローブ
31…触媒
40…処理液供給部
50…揺動アーム
60…コンディショニング部
90…制御部
480…モニタリング部
491…パラメータ変更部
Wf…ウェハ
PL…処理液
Claims (6)
- 処理液の存在下で基板と触媒とを接触させて、前記基板を処理する方法であって、
前記基板を高速で処理するための所定の処理条件で前記基板を処理するステップと、
同一の基板の処理中に、前記基板を低速で処理するように、前記処理条件を変更するステップと、
を有する、方法。 - 請求項1に記載の方法であって、
前記処理条件を変更するステップは、(1)前記触媒の前記基板に対する接触荷重、(2)前記触媒と前記基板との間の相対速度、(3)前記処理液の種類、(4)処理液のpH、(5)前記処理液の流量、(6)前記触媒に印加するバイアス電圧、(7)処理温度、および(8)触媒の種類、のうちの少なくとも1つを変更するステップを有する、
方法。 - 請求項1または2に記載の方法であって、前記方法はさらに、
処理中の基板の処理状態を監視するステップと、
前記基板の処理状態に応じて、前記処理条件を変更するステップと、を有する、
方法。 - 請求項1乃至3のいずれか一項に記載の方法であって、前記方法はさらに、
前記所定の処理条件での基板の処理を開始してから所定の時間が経過した後に、前記処理条件を変更するステップを有する、
方法。 - 請求項1乃至4のいずれか一項に記載の方法であって、前記方法はさらに、
化学機械的研磨により前記基板を研磨するステップを有する、
方法。 - 処理液の存在下でSiO2を含む基板と触媒とを接触させて、前記基板を処理する方法であって、
前記基板の表面にフッ化水素酸溶液を供給して、前記基板のSiO2をフッ化水素酸溶液によりエッチングするステップを有する、
方法。
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KR1020177036996A KR20180030790A (ko) | 2015-07-23 | 2016-07-06 | 기판 처리 장치, 기판 처리 시스템 및 기판 처리 방법 |
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JP2006049479A (ja) * | 2004-08-03 | 2006-02-16 | Nitta Haas Inc | 化学的機械研磨方法 |
JP2010034479A (ja) * | 2008-07-31 | 2010-02-12 | Shin Etsu Handotai Co Ltd | ウェーハの研磨方法 |
JP2012169649A (ja) * | 2005-01-24 | 2012-09-06 | Showa Denko Kk | 研磨組成物及び研磨方法 |
JP2014183221A (ja) * | 2013-03-19 | 2014-09-29 | Toshiba Corp | 半導体装置の製造方法 |
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US8734661B2 (en) * | 2007-10-15 | 2014-05-27 | Ebara Corporation | Flattening method and flattening apparatus |
US8834230B2 (en) * | 2008-07-31 | 2014-09-16 | Shin-Etsu Handotai Co., Ltd. | Wafer polishing method and double-side polishing apparatus |
US8735291B2 (en) * | 2011-08-25 | 2014-05-27 | Tokyo Electron Limited | Method for etching high-k dielectric using pulsed bias power |
JP5696024B2 (ja) * | 2011-11-09 | 2015-04-08 | 株式会社東芝 | 化学的平坦化方法及び化学的平坦化装置 |
US11220757B2 (en) * | 2011-12-06 | 2022-01-11 | Osaka Uiversity | Method for manufacturing solid oxide and device therefor |
KR102193325B1 (ko) * | 2014-04-18 | 2020-12-22 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판 처리 장치, 기판 처리 시스템 및 기판 처리 방법 |
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JP2006049479A (ja) * | 2004-08-03 | 2006-02-16 | Nitta Haas Inc | 化学的機械研磨方法 |
JP2012169649A (ja) * | 2005-01-24 | 2012-09-06 | Showa Denko Kk | 研磨組成物及び研磨方法 |
JP2010034479A (ja) * | 2008-07-31 | 2010-02-12 | Shin Etsu Handotai Co Ltd | ウェーハの研磨方法 |
JP2014183221A (ja) * | 2013-03-19 | 2014-09-29 | Toshiba Corp | 半導体装置の製造方法 |
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JP6510348B2 (ja) | 2019-05-08 |
JP2017028127A (ja) | 2017-02-02 |
CN107851570A (zh) | 2018-03-27 |
US20180211849A1 (en) | 2018-07-26 |
TW201705259A (zh) | 2017-02-01 |
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