WO2017008343A1 - 反射式tft阵列面板及其制备方法和液晶显示器 - Google Patents

反射式tft阵列面板及其制备方法和液晶显示器 Download PDF

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Publication number
WO2017008343A1
WO2017008343A1 PCT/CN2015/085639 CN2015085639W WO2017008343A1 WO 2017008343 A1 WO2017008343 A1 WO 2017008343A1 CN 2015085639 W CN2015085639 W CN 2015085639W WO 2017008343 A1 WO2017008343 A1 WO 2017008343A1
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Prior art keywords
reflective
gate
tft array
reflective electrode
array panel
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PCT/CN2015/085639
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English (en)
French (fr)
Inventor
徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/025,987 priority Critical patent/US20170160588A1/en
Publication of WO2017008343A1 publication Critical patent/WO2017008343A1/zh
Anticipated expiration legal-status Critical
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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Definitions

  • the present invention relates to the field of liquid crystal display, and in particular to a TFT array panel and a method for fabricating the same.
  • a TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • TFT-LCDs generally have a backlight module, which is called a transmissive or transflective TFT-LCD.
  • the disadvantage is that the contrast and brightness are greatly reduced in a strong light environment, especially for
  • the transmissive TFT-LCD of the outdoor display has a worse display effect, and the reflective TFT-LCD can achieve the display brightness by using an external light source, and can maintain the brightness and contrast of the display well in the case of strong ambient light.
  • the reflective TFT-LCD does not require a backlight module, so it has the advantages of low energy consumption and light weight, and is suitable for portable electronic devices. Therefore, reflective TFT-LCDs have gradually become an important part of the liquid crystal display market.
  • a reflective TFT-LCD having a good display effect is often designed by changing the polarization characteristics of the polarizer, or changing the type or performance of the liquid crystal, or adding some components to the TFT array panel.
  • these changes involve The material type, structure and performance are often complicated, difficult to operate, and the reflection area is small, making it difficult to make full use of the ambient light source.
  • the technical problem to be solved by the present invention is to provide a simple structure and a reflective surface.
  • the present invention provides a reflective TFT array panel, including:
  • a gate electrode, a gate line, a reflective electrode and a reflective electrode connection line are formed on the substrate;
  • a gate insulating layer formed on the gate, the gate line, the reflective electrode, and the reflective electrode connection line;
  • An active layer and a doped semiconductor layer sequentially formed on the gate insulating layer, and located directly above the gate;
  • a source, a drain and a data line are formed on the doped semiconductor layer, and the data line is connected to the drain;
  • a transparent pixel electrode formed on the insulating protective layer and located above the reflective electrode and connected to the source through the via;
  • the reflective electrode connection line is parallel to the gate line, the data line is perpendicular to the gate line and the reflective electrode connection line, and the gate line, the reflective electrode connection line and the adjacent two of the data lines are in the
  • the projection on the substrate forms a closed rectangle, the reflective electrode is located within the formed rectangle, and the reflective electrode is a metal having light reflectivity.
  • the gate, the gate line, the reflective electrode connection line and the data line are all metal layers having light reflectivity.
  • the reflective electrode has an uneven surface.
  • the surface of the reflective electrode is provided with ribs having an adjacent pitch of less than 80 ⁇ m.
  • the reflective electrode is at least one of metal aluminum, molybdenum, silver, titanium, copper and chromium.
  • the material of the reflective electrode is the same as the material of the gate and the gate line.
  • the active layer is an amorphous silicon layer or a graphene layer.
  • the present invention provides a liquid crystal display comprising a color filter, the reflective TFT array panel according to any one of claims 1 to 6, and a color filter and the reflective type A liquid crystal layer between the TFT array panels.
  • the present invention also provides a method of fabricating a reflective TFT array panel, comprising:
  • Step 1 Depositing a metal layer on the substrate by physical vapor deposition (PVD), forming a gate electrode, a gate line, a reflective electrode connection line, and a reflective electrode through a first patterning process;
  • PVD physical vapor deposition
  • Step 2 sequentially depositing a gate insulating layer, an active layer and a doped semiconductor layer on the substrate on which the step 1 is completed by a plasma enhanced chemical vapor deposition (PECVD) method, and forming a gate insulating layer and an active layer by a second patterning process And a pattern of doped semiconductor layers;
  • PECVD plasma enhanced chemical vapor deposition
  • Step 3 using a PVD method to deposit a source/drain metal layer on the substrate on which step 2 is completed, and forming a drain, a source, and a data line through a third patterning process;
  • Step 4 depositing silicon nitride or silicon oxide on the substrate of step 3 by PECVD to form an insulating protective layer, and forming a via hole by a fourth patterning process;
  • Step 5 depositing a transparent conductive material on the substrate on which step 4 is completed by a PVD method, and forming a transparent pixel electrode by a fifth patterning process.
  • step 1 is specifically: depositing a layer of metal on the substrate by physical vapor deposition, the metal being at least one of molybdenum, aluminum, chromium, silver and copper, forming a gate by a first patterning process, a gate line, a reflective electrode connection line, and a reflective electrode.
  • the gate insulating layer in step 2 is a nitride or oxide of silicon, the active layer is amorphous silicon or graphene, and the doped semiconductor layer is doped amorphous silicon.
  • the present invention has the following technical effects: (1)
  • the reflective TFT array panel and the liquid crystal display of the present invention are provided with reflective electrodes on the substrate, the structure is simple, and the reflective electrode and the gate and the gate line can be simultaneously The fabrication is completed in the same process, and the process is simple and feasible; (2)
  • the reflective electrode is a reflective metal, and the ambient light source can be fully utilized.
  • FIG. 1 is a top plan view showing an embodiment of a reflective TFT array panel of the present invention
  • Figure 2 is a cross-sectional view taken along line A-A of Figure 1;
  • Figure 3 is a cross-sectional view taken along line C-C of Figure 1;
  • Figure 5 is a flow chart of a method of fabricating a TFT array panel of the present invention.
  • FIG. 1 is a schematic plan view of one embodiment of a reflective TFT array panel of the present invention
  • FIGS. 2 and 3 are schematic cross-sectional views taken along line A-A and C-C of FIG. 1, respectively.
  • One embodiment of the present invention provides a reflective TFT array panel, including:
  • the gate electrode 2, the gate line 2' and the reflective electrode 3 formed on the substrate, the gate electrode 2, the gate line 2' and the reflective electrode 3 are in the same plane, and the reflective electrodes 3 are connected by a reflective electrode connection line 3'.
  • the electrode connection line 3' is parallel to the gate line 2', and the gate 2 and the reflection electrode 3 separated from each other are distributed therebetween, and the gate 2, the gate line 2', the reflective electrode and the reflective electrode connection line 3' may be the same Material, for example, may be aluminum, molybdenum, silver, copper, chromium or titanium, or may be an alloy of two or more of these metals;
  • the gate insulating layer 4 is a continuous distribution layer, and the gate insulating layer 4 is formed on the gate 2, the gate line 2', the reflective electrode 3, and the reflective electrode connection line 3';
  • the active layer 5 is formed on the gate insulating layer 4, and is located directly above the gate 2, that is, the gate insulating layer 4 is blocked between the active layer 5 and the gate 2, the active layer 5 is smaller than the gate 2;
  • the doped semiconductor layer 6 is formed on the active layer 5, and is itself broken at the middle to form a channel; in other words, the doped semiconductor layer 6 includes two portions, and a channel is formed between the two portions;
  • the electrode connection line 3' is vertical;
  • the insulating protective layer 10 and the via hole 11, the insulating protective layer 10 is formed on the source 7, the drain 8 and the data line 9, and the via hole 11 is connected to the source 7 through the insulating protective layer 10;
  • the transparent pixel electrode 12 is formed on the insulating protective layer 10 and above the reflective electrode 3, and the transparent pixel electrode 12 is connected to the source 7 through the via 11;
  • the reflective electrode connection line 3' is parallel to the gate line 2', the data line 9 and the gate line 2', and the reflective electrode connection line 3' Vertically, and the projection of the gate line 2 ′, the reflective electrode connection line 3 ′ and the adjacent two data lines 9 on the substrate 1 form a closed rectangle, the gate 2 and the reflective electrode 3 are located in the formed rectangle, and the reflective electrode 3 It is a metal with reflective properties.
  • the reflective electrode is provided as a metal having light reflectivity, light from an ambient light source can be effectively reflected, thereby making full use of the ambient light source.
  • the gate line 2', the reflective electrode connection line 3', the data line 9, the gate 2, and the reflective electrode 3 are each provided as a reflective metal, that is, It is said that the rectangular shape formed above, and the electrodes (ie, the gate electrode and the reflective electrode) distributed inside thereof have reflective properties, and a larger reflective area is formed while maintaining the original performance of each electrode, thereby further utilizing the ambient light source. .
  • the reflective electrode 3 When a strong ambient light is incident, part of the light may be reflected by the smooth display surface when entering the display, and the light entering the reflective electrode of the TFT array panel is reflected and refracted by the flat surface, and when it passes through the surface of the display, The angle may be the same as the angle of the light directly reflected on the surface of the display, so that the superposition of the light in the same direction causes the reflected light to be too strong to affect the display effect. Therefore, in one embodiment of the present invention, the reflective electrode 3 has an uneven surface. Therefore, the reflective electrode 3 forms a diffuse reflection on the reflection of the ambient incident light, and the reflection directions are different, and are not superimposed in the same direction as the light directly reflected on the surface of the display, thereby ensuring the display effect and enhancing the contrast.
  • the surface of the reflective electrode 3 is provided with a plurality of ribs 3", and the spacing between adjacent two ribs 3" is less than 80 ⁇ m.
  • a depression is formed between the ribs 3" and functions as a light guide plate.
  • the material of the ribs 3" may be the same as that of the reflective electrode 3, and the two are integrally formed.
  • the ridges 3" and reflections Different light guiding materials may be used for the electrode 3.
  • the extending direction of the rib 3" is perpendicular to the reflective electrode connecting line 3', and the pitch between the ridges 3" is 70 ⁇ m, but in other embodiments
  • the designer can set the direction of the ridge 3" and the specific spacing between the adjacent ridges 3" according to the requirements of the light direction. That is, the extending direction of the ribs 3" can be parallel to the reflective electrode.
  • the connecting line 3' or at an angle to the reflective electrode connecting line 3' may have a spacing between adjacent ribs 3" between 10 and 50 [mu]m.
  • the reflective electrode 3 is at least one of metallic aluminum, molybdenum, silver, copper, and chromium.
  • the material of the reflective electrode 3 may be the same as or different from the material of the gate and the gate line.
  • the active layer 5 may be an amorphous silicon layer or a graphene layer.
  • the transparent pixel electrode 12 may be an indium tin oxide layer or a metal mesh structure.
  • the present invention also provides a liquid crystal display comprising a color filter and the reflective TFT array panel, and a liquid crystal display layer between the color filter and the reflective TFT array panel.
  • the present invention also provides a method for fabricating a reflective TFT array panel.
  • a method for fabricating a reflective TFT array panel in the embodiments of FIGS. 1, 2, and 3 is provided. The method includes:
  • Step 1 Depositing a metal layer on the substrate by physical vapor deposition (PVD), forming a gate, a gate line, a reflective electrode connection line, and a reflective electrode by a first patterning process.
  • the first patterning process Including exposure, development, wet etching and stripping processes;
  • Step 2 sequentially depositing a gate insulating layer, an active layer and a doped semiconductor layer on the substrate on which the step 1 is completed by a plasma enhanced chemical vapor deposition (PECVD) method, and forming a gate insulating layer and an active layer by a second patterning process And a pattern of doping the semiconductor layer.
  • the second patterning process removes unnecessary materials by exposure, development, dry etching, stripping, etc., leaving the required material to form a gate insulating layer and an active layer.
  • doping a semiconductor layer PECVD
  • Step 3 using a PVD method to deposit a source and drain metal layer on the substrate on which the step 2 is completed, and forming a drain, a source, and a data line through a third patterning process.
  • the third patterning process is performed by exposure. , developing, wet etching, and stripping to form a data line and a source drain that has not been disconnected, and finally obtaining a channel and a drain and a source separated by the channel by dry etching;
  • Step 4 depositing silicon nitride or silicon oxide on the substrate of step 3 by PECVD to obtain an insulating protective layer, and forming a via hole by the fourth patterning process, that is, by exposure, development, dry etching and stripping The process forms a via hole;
  • Step 5 using a PVD method to deposit a transparent conductive material on the substrate on which step 4 is completed, and forming a transparent pixel electrode by a fifth patterning process.
  • the fifth patterning process is through exposure, development, wet etching, and stripping. The process proceeds to obtain a transparent pixel electrode.
  • the reflective TFT array panel is provided with a reflective electrode, since the reflective electrode is directly disposed on the substrate and is completed in the same process as the gate line and the gate, there is no need to add another process, so the process is simple and easy to implement.
  • step 1 is specifically: depositing a layer of metal on the substrate by physical vapor deposition, the metal being at least one of molybdenum, aluminum, chromium, silver, and copper, by first The sub-patterning process forms a gate, a gate line, a reflective electrode connection line, and a reflective electrode.
  • the gate insulating layer is a nitride or oxide of silicon
  • the active layer is amorphous silicon or graphene
  • the doped semiconductor layer is doped amorphous. silicon.
  • the thickness of the metal layer in step 1 is
  • the thickness of the gate insulating layer in step 2 is The thickness of the active layer and the doped semiconductor layer is
  • the thickness of the source/drain material layer in step 3 is
  • the thickness of the insulating protective layer in step 4 is
  • the thickness of the transparent conductive material in step 5 is

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Abstract

一种反射式TFT阵列面板、液晶显示器及其制备方法，包括：基板（1）、栅极（2）、栅线（2'）、反射电极（3）、反射电极连接线（3'）、栅绝缘层（4）、有源层（5）和掺杂半导体层（6）、源极（7）、漏极（8）、数据线（9）、绝缘保护层（10）、透明像素电极（12），所述反射电极连接线（3'）与所述栅线（2'）平行，所述数据线（9）与所述栅线（2'）、反射电极连接线（3'）垂直，且所述栅线（2'）、反射电极连接线（3'）与相邻两根所述数据线（9）在基板上的投影形成闭合的矩形，所述反射电极（3）位于所形成的矩形内，且所述反射电极（3）为具有反光性的金属。所述反射式TFT阵列面板结构简单，反射面积大。

Description

反射式TFT阵列面板及其制备方法和液晶显示器
本申请要求于2015年07月14日提交中国专利局、申请号为201510413303.0、发明名称为“反射式TFT阵列面板及其制备方法和液晶显示器”的中国专利申请的优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及液晶显示领域，尤其涉及一种TFT阵列面板及其制备方法。
背景技术
TFT-LCD(Thin Film Transistor-Liquid Crystal Display,薄膜晶体管液晶显示器)是利用设置在液晶层上电场强度的变化，改变液晶分子的旋转程度，从而控制透光的强弱来显示图像，通常包括偏光片、彩膜基板、TFT阵列面板，以及加在彩膜基板和TFT阵列面板之间的液晶分子层。现有技术中，TFT-LCD一般都具有背光模块，称为透射式或半反半透式TFT-LCD，其缺点是，在强光环境中，其对比度和亮度会大大降低，尤其是专用于户外显示的透射式TFT-LCD，显示效果更差，而反射式TFT-LCD由于其借助外部光源来达到显示效果，在环境光线很强的情况下，可以很好地保持显示的亮度和对比度，且其无需背光模组，所以同时具有耗能低、轻便等优点，很适合于便携式电子设备。因此，反射式TFT-LCD逐渐成为液晶显示市场上的一个重要组成部分。
现有技术中，往往通过改变偏光片的偏光特性，或者改变液晶的类型或性能，或者在TFT阵列面板上增加一些部件，以设计出显示效果好的反射式TFT-LCD，然而，这些改变涉及材料类型、结构和性能等多方面，往往比较复杂、操作难度大，且反射面积小，难以充分利用环境光源。
发明内容
有鉴于此，本发明所要解决的技术问题在于，提供一种结构简单、反射面 积大的反射式TFT阵列面板和液晶显示器，其可充分利用环境光源；本发明还提供一种制备反射式TFT阵列面板的方法。
为了解决上述技术问题，一方面，本发明提供一种反射式TFT阵列面板，包括：
基板；
栅极、栅线、反射电极和反射电极连接线，形成于基板上；
栅绝缘层，形成于所述栅极、栅线、反射电极和反射电极连接线上；
依次形成于所述栅绝缘层上的有源层和掺杂半导体层，且位于所述栅极正上方；
源极、漏极和数据线，所述源极和漏极形成于掺杂半导体层上，所述数据线与漏极连接；
绝缘保护层，形成于所述源极、漏极和数据线上；
透明像素电极，形成于所述绝缘保护层上，且位于所述反射电极上方，通过过孔与源极相接；
所述反射电极连接线与所述栅线平行，所述数据线与所述栅线、反射电极连接线垂直，且所述栅线、反射电极连接线与相邻两根所述数据线在所述基板上的投影形成闭合的矩形，所述反射电极位于所形成的矩形内，且所述反射电极为具有反光性的金属。
其中，所述栅极、栅线、反射电极连接线和所述数据线，皆为具有反光性的金属层。
其中，所述反射电极具有凹凸不平的表面。
其中，所述反射电极表面设置有相邻间距小于80μm的凸条。
其中，所述反射电极为金属铝、钼、银、钛、铜和铬中的至少一种。
其中，所述反射电极的材质与所述栅极、栅线的材质相同。
其中，所述有源层为非晶硅层或石墨烯层。
另一方面，本发明还提供一种液晶显示器，包括彩色滤光片、权利要求1至6任一项所述的反射式TFT阵列面板，以及夹在所述彩色滤光片和所述反射式TFT阵列面板之间的液晶层。
再一方面，本发明还提供了一种制备反射式TFT阵列面板的方法，包括：
步骤1、采用物理气相沉积法(PVD)在基板上沉积金属层，通过第一次构图工艺形成栅极、栅线、反射电极连接线和反射电极；
步骤2、采用等离子体增强化学气相沉积(PECVD)法在完成步骤1的基板上依次沉积栅绝缘层、有源层和掺杂半导体层，通过第二次构图工艺形成栅绝缘层、有源层和掺杂半导体层的图形；
步骤3、采用PVD法在完成步骤2的基板上沉积源漏极金属层，通过第三次构图工艺形成漏极、源极和数据线；
步骤4、采用PECVD法在完成步骤3的基板上沉积硅的氮化物或硅的氧化物，形成绝缘保护层，并通过第四次构图工艺形成过孔；
步骤5、采用PVD法在完成步骤4的基板上沉积透明导电材料，通过第五次构图工艺形成透明像素电极。
其中，步骤1具体为：采用物理气相沉积法在基板上沉积一层金属，所述金属为钼、铝、铬、银和铜之中的至少一种，通过第一次构图工艺形成栅极、栅线、反射电极连接线和反射电极。
其中，步骤2中所述栅绝缘层为硅的氮化物或氧化物，所述有源层为非晶硅或石墨烯，所述掺杂半导体层为掺杂非晶硅。
与现有技术相比，本发明具有以下技术效果：(1)本发明的反射式TFT阵列面板和液晶显示器在基板上设置了反射电极，结构简单，且反射电极与栅极、栅线可同时在同一道工序中完成制作，工艺上简便可行；(2)本发明的TFT阵列面板中，反射电极是具有反光性的金属，可以充分利用环境光源。
附图说明
为了更清楚地说明本发明实施方式或现有技术中的技术方案，下面将对实施方式或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1是本发明反射式TFT阵列面板的一个实施方式的俯视示意图；
图2是图1中沿剖切线A-A的截面示意图；
图3是图1中沿剖切线C-C的截面示意图；
图4是本发明反射式TFT阵列面板的一个实施方式中设置了凸条的反射电极；
图5是本发明制备TFT阵列面板的方法流程图。
具体实施方式
下面将结合本发明实施方式中的附图，对本发明实施方式中的技术方案进行清楚、完整地描述。
请同时参阅图1、2和3，图1是本发明反射式TFT阵列面板的一个实施方式的俯视示意图；图2和图3分别是图1中沿剖切线A-A、C-C的截面示意图。本发明的一个实施方式提供一种反射式TFT阵列面板，包括：
基板1；
形成于基板上的栅极2、栅线2'和反射电极3，栅极2、栅线2'和反射电极3处于同一平面，各个反射电极3之间用反射电极连接线3'连接，反射电极连接线3'与栅线2'平行，两者之间分布着彼此分离的栅极2和反射电极3，栅极2、栅线2'、反射电极和反射电极连接线3'可以是同一种材质，例如，可以是铝、钼、银、铜、铬或钛，也可以是这其中两种或几种金属的合金；
栅绝缘层4是一连续分布层，栅绝缘层4形成于栅极2、栅线2'、反射电极3和反射电极连接线3'上；
有源层5形成于栅绝缘层4上，且位于栅极2正上方，即栅绝缘层4阻隔在有源层5和栅极2之间，有源层5的面积小于栅极2；
掺杂半导体层6形成于有源层5上，且其自身在中间处断开，形成沟道；换言之，掺杂半导体层6包括两部分，且在这两部分之间形成沟道；
源极7、漏极8和数据线9，所述源极7和漏极8形成于掺杂半导体层6上，数据线9与漏极8连接，且数据线9与栅线2'及反射电极连接线3'垂直；
绝缘保护层10和过孔11，绝缘保护层10形成于源极7、漏极8和数据线9上，过孔11贯穿绝缘保护层10与源极7相接；
透明像素电极12，形成于绝缘保护层10上，且位于反射电极3上方，透明像素电极12通过过孔11与源极7连接；
反射电极连接线3'与栅线2'平行，数据线9与栅线2'、反射电极连接线3' 垂直，且栅线2'、反射电极连接线3'与相邻两根数据线9在基板1上的投影形成闭合的矩形，栅极2和反射电极3位于所形成的矩形内，反射电极3为具有反光性的金属。
由于反射电极设置为具有反光性的金属，可以有效反射来自环境光源的光，从而充分利用环境光源。
在本发明的反射式TFT阵列面板的一个实施方式中，将栅线2'、反射电极连接线3'、数据线9、栅极2和反射电极3均设置为具有反光性的金属，也就是说，上述所形成的矩形，以及分布于其内部的电极(即栅极和反射电极)均具有反光性，在保持各电极原有性能的同时，形成更大的反射面积，进一步充分利用环境光源。
较强的环境光入射时，部分光线可能在进入显示器时就被光滑的显示器表面反射，而进入TFT阵列面板的反射电极的光线经平坦的表面反射和折射后，从显示器表面穿出时，其角度可能与在显示器表面直接反射的光线的角度相同，从而造成同方向光线的叠加使反射光过强而影响显示效果，因而，在本发明的一个实施方式中，反射电极3具有凹凸不平的表面，从而使反射电极3对环境入射光的反射形成漫反射，反射方向各不相同，不会与在显示器表面直接反射的光同方向叠加，从而保证显示效果，增强对比度。
请参阅图4，在本发明的反射式TFT阵列面板的一个实施方式中，反射电极3表面设置有多个凸条3”，相邻的两个凸条3”之间的间距小于80μm，所述凸条3”之间形成凹陷，起导光板的作用，凸条3”的材质可以与反射电极3的材质一样，两者一体成型，当然，在其它实施方式中，凸条3”和反射电极3也可以采用不同的导光材料。在本实施方式中，凸条3”的延伸方向是垂直于反射电极连接线3'，凸条3”间的间距为70μm，但是，在其它实施方式中，设计者可根据对光方向的要求而设置凸条3”的方向以及相邻的凸条3”之间的具体间距。也就是说，凸条3”的延伸方向可以是平行于反射电极连接线3'，或与反射电极连接线3'成一定角度，相邻的凸条3”之间的间距可以在10-50μm范围之间。
在本发明的反射式TFT阵列面板的一个实施方式中，反射电极3为金属铝、钼、银、铜和铬中的至少一种。
在本发明的反射式TFT阵列面板的一个实施方式中，反射电极3的材质可以与所述栅极、栅线的材质相同或不相同。
在本发明的反射式TFT阵列面板的一个实施方式中，有源层5可以是非晶硅层或石墨烯层。
在本发明的反射式TFT阵列面板的一个实施方式中，透明像素电极12可以是氧化铟锡层或金属网格结构。
本发明还提供一种液晶显示器，包括彩色滤光片和所述反射式TFT阵列面板，以及位于彩色滤光片和所述反射式TFT阵列面板之间的液晶显示层。
本发明还提供一种制备反射式TFT阵列面板的方法，请参阅图5，提供一种制备图1、2和3所对应实施方式中的反射式TFT阵列面板的方法，所述方法包括：
步骤1、采用物理气相沉积法(PVD)在基板上沉积金属层，通过第一次构图工艺形成栅极、栅线、反射电极连接线和反射电极，在一个实施方式中，第一次构图工艺包括曝光、显影、湿蚀刻和剥离等工序；
步骤2、采用等离子体增强化学气相沉积(PECVD)法在完成步骤1的基板上依次沉积栅绝缘层、有源层和掺杂半导体层，通过第二次构图工艺形成栅绝缘层、有源层和掺杂半导体层的图形，在一个实施方式中，第二次构图工艺即通过曝光、显影、干蚀刻、剥离等工序，去掉不要的材料，留下需要的材料形成栅绝缘层、有源层和掺杂半导体层；
步骤3、采用PVD法在完成步骤2的基板上沉积源漏极金属层，通过第三次构图工艺形成漏极、源极和数据线，在一个实施方式中，第三次构图工艺即通过曝光、显影、湿蚀刻和剥离形成数据线和尚未断开的源漏极，最后通过干刻得到沟道及由沟道隔开的漏极和源极；
步骤4、采用PECVD法在完成步骤3的基板上沉积硅的氮化物或硅的氧化物，得到绝缘保护层，并通过第四次构图工艺形成过孔，即通过曝光、显影、干刻和剥离等工序形成过孔；
步骤5、采用PVD法在完成步骤4的基板上沉积透明导电材料，通过第五次构图工艺形成透明像素电极，在一个实施方式中，第五次构图工艺即通过曝光、显影、湿蚀刻和剥离等工序得到透明像素电极。
虽然反射式TFT阵列面板设置了反射电极，但因反射电极直接设置在基板上，与栅线、栅极同一道工序完成制作，无需增加另外的工序，因此工艺简单、易实现。
在本发明的一个实施方式中，步骤1具体为：采用物理气相沉积法在基板上沉积一层金属，所述金属为钼、铝、铬、银和铜之中的至少一种，通过第一次构图工艺形成栅极、栅线、反射电极连接线和反射电极。
在本发明的一个实施方式中，步骤2中所述栅绝缘层为硅的氮化物或氧化物，所述有源层为非晶硅或石墨烯，所述掺杂半导体层为掺杂非晶硅。
在本发明的一个实施方式中，步骤1中的金属层厚度为
Figure PCTCN2015085639-appb-000001
在本发明的一个实施方式中，步骤2中的栅绝缘层厚度为
Figure PCTCN2015085639-appb-000002
有源层和掺杂半导体层厚度为
Figure PCTCN2015085639-appb-000003
在本发明的一个实施方式中，步骤3中的源漏极材料层厚度为
Figure PCTCN2015085639-appb-000004
在本发明的一个实施方式中，步骤4中的绝缘保护层厚度为
Figure PCTCN2015085639-appb-000005
在本发明的一个实施方式中，步骤5中的透明导电材料厚度为
Figure PCTCN2015085639-appb-000006
以上所述的实施方式，并不构成对该技术方案保护范围的限定。任何在上述实施方式的精神和原则之内所作的修改、等同替换和改进等，均应包含在该技术方案的保护范围之内。

Claims (16)

  1. 一种反射式TFT阵列面板，其中，包括：
    基板；
    栅极、栅线、反射电极和反射电极连接线，形成于所述基板上；
    栅绝缘层，形成于所述栅极、栅线、反射电极和反射电极连接线上；
    依次形成于所述栅绝缘层上的有源层和掺杂半导体层，所述有源层和掺杂半导体层位于所述栅极正上方；
    源极、漏极和数据线，所述源极和所述漏极形成于所述掺杂半导体层上，所述数据线与所述漏极连接；
    绝缘保护层，形成于所述源极、所述漏极和所述数据线上；
    透明像素电极，形成于所述绝缘保护层上，通过过孔与所述源极相接；
    所述反射电极连接线与所述栅线平行，所述数据线与所述栅线、所述反射电极连接线垂直，且所述栅线、所述反射电极连接线与相邻两根所述数据线在所述基板上的投影形成闭合的矩形，所述反射电极位于所述矩形范围内，且所述反射电极为具有反光性的金属材质。
  2. 根据权利要求1所述的反射式TFT阵列面板，其中，所述栅极、所述栅线、所述反射电极连接线和所述数据线，皆为具有反光性的金属材质。
  3. 根据权利要求2所述的反射式TFT阵列面板，其中，所述反射电极具有凹凸不平的表面。
  4. 根据权利要求2所述的反射式TFT阵列面板，其中，所述反射电极表面设置有多个凸条，相邻的两个所述凸条之间的间距小于80μm。
  5. 根据权利要求2所述的反射式TFT阵列面板，其中，所述反射电极表面设置有多个凸条，相邻的两个所述凸条之间的间距在10-50μm范围内。
  6. 根据权利要求4或5所述的反射式TFT阵列面板，其中，所述凸条的延伸方向平行或垂直于所述反射电极连接线，或所述凸条的延伸方向与所述反射电极连接线成一夹角。
  7. 根据权利要求4或5所述的反射式TFT阵列面板，其中，所述凸条的材质与所述反射电极的材质相同。
  8. 根据权利要求4或5所述的反射式TFT阵列面板，其中，所述凸条的材质与所述反射电极的材质不同。
  9. 根据权利要求4或5所述的反射式TFT阵列面板，其中，所述凸条与所述反射电极是不可拆分的一体式结构。
  10. 根据权利要求1至5任一项所述的反射式TFT阵列面板，其中，所述反射电极为金属铝、钼、银、钛、铜和铬中的至少一种。
  11. 根据权利要求1至5任一项所述的反射式TFT阵列面板，其中，所述有源层为非晶硅层或石墨烯层。
  12. 根据权利要求1至5任一项所述的反射式TFT阵列面板，其中，所述透明像素电极是氧化铟锡层或金属网格结构。
  13. 一种液晶显示器，其中，包括彩色滤光片、权利要求1至12任一项所述的反射式TFT阵列面板，以及夹在所述彩色滤光片和所述反射式TFT阵列面板之间的液晶层。
  14. 一种制备权利要求1所述反射式TFT阵列面板的方法，其中，包括：
    步骤1、采用物理气相沉积法在基板上沉积一层金属层，通过第一次构图工艺形成栅极、栅线、反射电极和反射电极连接线；
    步骤2、采用等离子体增强化学气相沉积法在完成步骤1的基板上依次沉积栅绝缘层、有源层和掺杂半导体层，通过第二次构图工艺形成栅绝缘层、有源层和掺杂半导体层的图形；
    步骤3、采用物理气相沉积法在完成步骤2的基板上沉积源漏极金属层，通过第三次构图工艺形成漏极、源极和数据线；
    步骤4、采用等离子体增强化学气相沉积法在完成步骤3的基板上沉积硅的氮化物或硅的氧化物，形成绝缘保护层，并通过第四次构图工艺形成过孔；
    步骤5、采用物理气相沉积法在完成步骤4的基板上沉积透明导电材料，通过第五次构图工艺形成透明像素电极。
  15. 根据权利要求14所述的方法，其中，步骤1具体为：采用物理气相沉积法在基板上沉积一层金属，所述金属为钼、铝、铬、银和铜之中的至少一种，通过第一次构图工艺形成栅极、栅线、反射电极和反射电极连接线。
  16. 根据权利要求14或15所述的方法，其中，步骤2中所述栅绝缘层为硅的 氮化物或氧化物，所述有源层为非晶硅或石墨烯，所述掺杂半导体层为掺杂非晶硅。
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