WO2017006726A1 - Dispositif de refroidissement - Google Patents

Dispositif de refroidissement Download PDF

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Publication number
WO2017006726A1
WO2017006726A1 PCT/JP2016/067839 JP2016067839W WO2017006726A1 WO 2017006726 A1 WO2017006726 A1 WO 2017006726A1 JP 2016067839 W JP2016067839 W JP 2016067839W WO 2017006726 A1 WO2017006726 A1 WO 2017006726A1
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WO
WIPO (PCT)
Prior art keywords
cooling device
sealing film
less
mole
vanadium
Prior art date
Application number
PCT/JP2016/067839
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English (en)
Japanese (ja)
Inventor
登 谷田
博 丸澤
廣瀬　左京
Original Assignee
株式会社村田製作所
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Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to JP2017527152A priority Critical patent/JPWO2017006726A1/ja
Publication of WO2017006726A1 publication Critical patent/WO2017006726A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G31/00—Compounds of vanadium
    • C01G31/02—Oxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08—Materials not undergoing a change of physical state when used
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D20/00—Heat storage plants or apparatus in general; Regenerative heat-exchange apparatus not covered by groups F28D17/00 or F28D19/00
    • F28D20/02—Heat storage plants or apparatus in general; Regenerative heat-exchange apparatus not covered by groups F28D17/00 or F28D19/00 using latent heat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/14—Thermal energy storage

Definitions

  • the present invention relates to a cooling device.
  • the number of electronic components such as CPU (central processing unit), power amplifier, FET (field effect transistor), IC (integrated circuit), voltage regulator, etc., which become heat sources, has increased due to the recent improvement in performance of electronic devices.
  • the increase in energy generated overlaps with the problem of heat generation.
  • mobile devices such as smartphones and tablet terminals have a problem that the heat deteriorates the capacity of the battery and seriously affects the reliability of the electronic devices to be configured. Therefore, it is required to control the temperature inside the device to a higher degree.
  • Control of the heat generated from the heat source as described above is performed by a cooling fan, a heat pipe, a heat sink, a thermal sheet, a Peltier element, or the like, which is an existing heat management solution.
  • a cooling device in which a fan or a Peltier element is combined is described (see Patent Document 1).
  • the cooling device combining the heat sink and the fan or the Peltier element as described above has a relatively complicated structure and increases the size of the device, particularly for thin devices such as smartphones and tablet terminals. Hateful. Furthermore, since power is consumed, it is disadvantageous from the viewpoint of low power consumption (battery life).
  • the temperature is currently controlled only by means of heat dissipation through the housing, and the heat source and the housing are thermally coupled by a thermal sheet or the like to release heat.
  • Heat radiation through the housing as described above is limited because the surface area of the housing is limited. Therefore, the temperature of each heat source is measured, and when the temperature exceeds a predetermined temperature, the performance of the CPU or the like is limited (suppressing heat generation itself). That is, the temperature rise of the housing may hinder the performance of the CPU or the like.
  • heat dissipation through such a case in other words, heat dissipation by heat transfer to the entire device, heat is also transferred to the battery, which can lead to a decrease in battery capacity over time.
  • vanadium oxide specifically, vanadium dioxide
  • vanadium dioxide is a ceramic material that absorbs heat accompanying a crystal structure phase transition or a magnetic phase transition, by placing it near the heat source of an electronic device.
  • a cooling device that can be used with a power supply.
  • an object of the present invention is to provide a cooling device that can be used without a power source, can be miniaturized, and has excellent moisture resistance.
  • the present inventor has found that the deterioration of the endothermic characteristics in a high humidity environment is due to the fact that the ceramic material is oxidized and hydroxylated by exposure to moisture. . Therefore, the present inventor considers that it is effective to block the ceramic material from the outside air in order to improve moisture resistance, and provides a cooling device with high moisture resistance by sealing these with a laminate material. I found out that I can do it.
  • a cooling device comprising a first sealing film, a second sealing film, and a ceramic material that absorbs heat, wherein the first sealing film and the first sealing film Two cooling films are laminated, and a ceramic material that absorbs heat is filled and sealed between the laminated first sealing film and the second sealing film.
  • an electronic component comprising the cooling device.
  • an electronic apparatus comprising the cooling device or the electronic component.
  • a cooling device that can be used without a power source, can be reduced in size, and has excellent moisture resistance is provided. can do.
  • FIG. 1 is a diagram schematically showing one aspect of the cooling device of the present invention.
  • the cooling device 1 of the present invention comprises a first sealing film 2 and a second sealing film 4 and a ceramic material 6 that absorbs heat by latent heat.
  • the ceramic material is sealed while being sandwiched between the first sealing film and the second sealing film.
  • the ceramic material that absorbs heat by latent heat is sealed by the first sealing film and the second sealing film, contact between the ceramic material and moisture is suppressed, and a high-humidity environment Even under, the function can be maintained for a long time.
  • the cooling device of the present invention is not particularly limited, it has a sheet-like shape, and the thickness is preferably 100 ⁇ m or more and 10 mm or less, more preferably 1 mm or more and 8 mm or less, and further preferably 3 mm or more and 5 mm or less.
  • the first sealing film and the second sealing film may be a single layer film or a laminated film.
  • the first sealing film and the second sealing film seal the ceramic material by being in close contact with each other at the periphery.
  • the method for bringing both into close contact with each other is not particularly limited, and examples thereof include adhesion by welding, an adhesive, and the like, preferably welding, for example, laminating.
  • the thickness of the first sealing film and the second sealing film is not particularly limited as long as it does not substantially permeate moisture (water vapor), for example, 1 ⁇ m or more, preferably 5 ⁇ m or more, more preferably 10 ⁇ m or more, For example, it may be 100 ⁇ m or more, 500 ⁇ m or more, or 1 mm or more.
  • the thickness is preferably 1 mm or less, more preferably 500 ⁇ m or less, still more preferably 100 ⁇ m or less, and even more preferably 50 ⁇ m or less.
  • the adhesion region between the first sealing film and the second sealing film for sealing the ceramic material is preferably at least 1 mm or more, more preferably at least 3 mm or more from the end of the region where the ceramic material is present, More preferably, it may be at least 5 mm or more. This close contact region may vary depending on the amount of ceramic material to be sealed, the material of the sealing film, and the like.
  • the material constituting the first sealing film and the second sealing film is preferably a resin that can be laminated.
  • the resin that can be laminated is not particularly limited, and may be, for example, polyolefin such as polyethylene, polypropylene, polyethylene terephthalate, and nylon.
  • Ceramic materials that absorb heat may have insufficient insulation, and may cause a short circuit if used near a heat source where current can flow or on a circuit board. Since the resin that can be laminated is insulative, it is advantageous in that a short circuit of the electric circuit due to the cooling device can be prevented.
  • the material constituting each layer is not particularly limited, and examples thereof include resins, rubbers, metals, alloys, and other inorganic materials (graphite, glass). May be.
  • each layer is not particularly limited, and may be, for example, 1 ⁇ m or more and 500 ⁇ m or less, preferably 5 ⁇ m or more and 300 ⁇ m or less, more preferably 10 ⁇ m or more and 200 ⁇ m or less.
  • the outermost layers of the first sealing film and the second sealing film can each be formed from an insulating material.
  • the outermost layer means a layer farthest from the ceramic material among the layers of the laminated film.
  • the insulating material is not particularly limited, and examples thereof include resins such as polyolefins such as polyethylene, polypropylene, polyethylene terephthalate, and nylon.
  • the thickness of the outermost layer made of an insulating material is not particularly limited, but may be, for example, 1 ⁇ m to 100 ⁇ m, preferably 5 ⁇ m to 50 ⁇ m, and more preferably 10 ⁇ m to 30 ⁇ m.
  • the innermost layers of the first sealing film and the second sealing film are in close contact with each other to seal the ceramic material.
  • the innermost layer means a layer closest to the ceramic material among layers of the laminated film (that is, a layer in contact with the ceramic material).
  • the method for bringing the innermost layers into close contact with each other is not particularly limited, and examples thereof include welding, adhesion with an adhesive, and the like, preferably welding, for example, laminating.
  • the material constituting the innermost layer of the sealing film is a resin that can be laminated, and is not particularly limited.
  • the material may be a polyolefin such as polyethylene, polypropylene, polyethylene terephthalate, and nylon.
  • the thickness of the innermost layer of the first sealing film and the second sealing film is not particularly limited, but may be, for example, 1 ⁇ m to 100 ⁇ m, preferably 5 ⁇ m to 50 ⁇ m, more preferably 10 ⁇ m to 30 ⁇ m.
  • the cooling device of the present invention may have at least one intermediate layer between the first sealing film and the second sealing film.
  • the intermediate layer may be a layer formed from a highly thermally conductive material.
  • the layer formed from the high thermal conductivity material By using the layer formed from the high thermal conductivity material, the release of heat through the sealing film can be promoted, and the cooling efficiency of the cooling device is improved.
  • the high thermal conductivity material is not particularly limited, and examples thereof include metals (for example, aluminum and copper), alloys (for example, stainless steel), graphite, and the like.
  • the thickness of the layer formed from the high thermal conductivity material is not particularly limited, but may be, for example, 3 ⁇ m to 200 ⁇ m, preferably 5 ⁇ m to 100 ⁇ m.
  • the thickness of the layer formed from the high thermal conductivity material is 3 ⁇ m or more, the release of heat through the sealing film can be further promoted.
  • the thickness of the layer formed from the high thermal conductivity material is 200 ⁇ m or less, the thickness of the cooling device can be reduced, which contributes to downsizing.
  • the cooling device of the present invention is such that the first sealing film and the second sealing film are the outermost layer formed from an insulating material and the outermost layer formed from a resin material, preferably a resin that can be laminated.
  • a resin material preferably a resin that can be laminated.
  • the ceramic material used in the present invention absorbs heat by latent heat. Ceramic material can absorb high heat temporarily by latent heat, and release the absorbed heat when the temperature is lowered to obtain a high cooling effect by leveling the heat over time. It becomes possible.
  • the ceramic material of the present invention is preferably based on vanadium oxide, typically vanadium dioxide.
  • the “main component” means a component contained in the ceramic material by 60% by mass or more, particularly 80% by mass or more, preferably 90% by mass or more, more preferably 95% by mass or more, and further preferably 98% by mass.
  • it means a component contained in, for example, 98.0 to 99.8% by mass or substantially 100%.
  • Impurities in the ceramic material are not particularly limited, but vanadium oxides other than the vanadium oxide described below, such as V 2 O 3 and V 2 O 5 , other ceramic materials such as glass, and Na, Al, Cr, Fe Ni, Mo, Sb, Ca, Si, and oxides thereof.
  • the vanadium oxide contains vanadium and M (wherein M is at least one selected from W, Ta, Mo and Nb), and the total amount of vanadium and M is 100 mol parts.
  • V may be vanadium oxide in which the molar part of M is 0 mol part or more and about 5 mol part or less. Note that M is not an essential component, and the content molar part of M may be 0.
  • the vanadium oxide has the formula: V 1-x M x O 2 (In the formula, M is W, Ta, Mo or Nb, and x is 0 or more and 0.05 or less.) Or one or more vanadium oxides represented by
  • the vanadium oxide has the formula: V 1-x W x O 2 (In the formula, x is 0 or more and 0.01 or less.) Or one or more vanadium oxides represented by
  • the vanadium oxide is a composite oxide containing A (where A is Li or Na) and vanadium, and the content of A when the vanadium is 100 mol parts is about
  • the composite oxide may be 50 to about 110 parts by mole, preferably about 70 to about 110 parts by mole, more preferably about 70 to about 98 parts by mole.
  • the vanadium oxide is a composite oxide containing A (where A is Li or Na), vanadium and a transition metal (for example, at least one selected from titanium, cobalt, iron and nickel). And
  • A is Li or Na
  • vanadium and a transition metal for example, at least one selected from titanium, cobalt, iron and nickel.
  • the molar ratio of vanadium to transition metal is in the range of 995: 5 to 850: 150;
  • a composite oxide characterized in that the molar ratio of A to the total of vanadium and transition metals is in the range of 100: 70 to 100: 110.
  • the vanadium oxide has the formula: A y V 1-z M a z O 2 (Wherein A is Li or Na, M a is a transition metal; y is 0.5 or more and 1.1 or less, preferably y is 0.7 or more and 1.1 or less. And z is 0 or more and 0.15 or less.) Or one or more vanadium oxides represented by
  • A is Li.
  • M a is at least one metal selected titanium, cobalt, iron and nickel.
  • y and z satisfy either of the following (a) or (b).
  • (A) 0.70 ⁇ y ⁇ 0.98 and z 0, or (b) 0.70 ⁇ y ⁇ 1.1 and 0.005 ⁇ z ⁇ 0.15
  • the vanadium oxide is Ti-doped vanadium oxide or vanadium oxide further doped with other atoms selected from the group consisting of W, Ta, Mo and Nb,
  • the other atom is W
  • the content mole part of the other atom is greater than 0 mole part and less than or equal to 5 mole part with respect to a total of 100 mole parts of vanadium, Ti, and other atoms
  • the other atom is Ta, Mo or Nb
  • the content mole part of the other atom is greater than 0 mole part and 15 mole parts or less with respect to 100 mole parts in total of vanadium, Ti and other atoms
  • the content mole part of titanium is not less than 2 mole parts and not more than 30 mole parts with respect to 100 mole parts in total of vanadium, Ti and other atoms.
  • the Ti-doped vanadium oxide may contain 5 to 10 mole parts of titanium with respect to 100 mole parts of Ti and other atoms in total.
  • Ti-doped vanadium dioxide means vanadium oxide showing a corresponding crystal structure by X-ray structural analysis (typically using a powder X-ray diffraction method).
  • vanadium dioxide doped with other atoms means vanadium dioxide doped with other atoms in addition to Ti, and means vanadium oxide showing a corresponding crystal structure by X-ray structural analysis. To do.
  • the vanadium oxide is Formula: V 1-xy Ti x M y O 2 [Wherein M is W, Ta, Mo or Nb; x is 0.02 or more and 0.30 or less, y is 0 or more, When M is W, y is 0.05 or less, When M is Ta, Mo or Nb, y is 0.15 or less. ] It is vanadium oxide represented by these. By using such vanadium oxide, the moisture resistance of the ceramic material is improved.
  • x may be 0.05 or more and 0.10 or less.
  • the temperature at which the vanadium oxide undergoes phase transition is appropriately selected depending on the object to be cooled, the purpose of cooling, and the like. For example, when the object to be cooled is a CPU, the phase is increased at 20 to 100 ° C., preferably 40 to 60 ° C. It is preferable to transfer.
  • the temperature at which the vanadium oxide undergoes phase transition that is, the temperature at which the vanadium oxide exhibits latent heat, can be adjusted by adding (doping) other atoms and adjusting the amount of the atoms added.
  • the vanadium oxide preferably has an initial latent heat of 35 J / g or more, more preferably 40 J / g or more, and still more preferably 43 J / g or more.
  • latent heat is the total amount of thermal energy required when the phase of a substance changes, and in this specification, solid-solid phase transitions such as electrical, magnetic, and structural phase transitions are used. This refers to the amount of heat generated and absorbed.
  • the vanadium oxide is preferably in the form of particles (powder).
  • the average particle diameter of the vanadium oxide (D50: particle diameter distribution on a volume basis, particle diameter at the point where the cumulative value is 50% in the cumulative curve with the total volume being 100%) is not particularly limited. It may be 0.1 to several hundred ⁇ m, specifically 0.1 to 900 ⁇ m, typically about 0.2 to 50 ⁇ m, and preferably 0.5 to 50 ⁇ m.
  • the average particle diameter can be measured using a laser diffraction / scattering soot particle diameter / particle size distribution measuring apparatus or an electronic scanning microscope.
  • the average particle diameter is preferably 0.2 ⁇ m or more from the viewpoint of ease of handling and moisture resistance, and is preferably 50 ⁇ m or less from the viewpoint of being able to be molded more densely.
  • the present invention also provides an electronic component having the cooling device of the present invention and an electronic apparatus having the cooling device or the electronic component.
  • the electronic component is not particularly limited, but for example, an integrated circuit (IC) such as a central processing unit (CPU), a power management IC (PMIC), a power amplifier (PA), a transceiver IC, and a voltage regulator (VR).
  • IC integrated circuit
  • CPU central processing unit
  • PMIC power management IC
  • PA power amplifier
  • VR voltage regulator
  • LEDs Light emitting diodes
  • LEDs incandescent bulbs
  • semiconductor lasers and other light emitting elements semiconductor lasers and other light emitting elements
  • FETs field effect transistors
  • heat source components such as lithium ion batteries, substrates, heat sinks, housings, etc. Examples include parts generally used in electronic equipment.
  • the electronic device is not particularly limited, and examples thereof include a mobile phone, a smartphone, a personal computer (PC), a tablet terminal, and a hard disk drive.
  • AL aluminum
  • ON nylon
  • CPP is modified polypropylene
  • EVA is an ethylene / vinyl acetate copolymer
  • ad is an acrylic adhesive.
  • the application amount of EVA is 5 g / m 2 .
  • a vanadium dioxide powder (5 g) is placed in the center of the laminate film (length 7 cm ⁇ width 7 cm), and another laminate film (length 7 cm ⁇ width 7 cm) is stacked thereon.
  • the films were laminated using a laminating apparatus (Fuji Impulse Co., Ltd.) to obtain cooling devices 1 to 4 in which vanadium dioxide powder was sealed between the laminated films as shown in FIG.
  • Test Example 1 The cooling devices 1 to 4 obtained above were exposed to an atmosphere of 85 ° C. and 85% RH, and the endothermic amount was measured after 1000 hours and 2000 hours. As a control, non-laminated vanadium oxide was also tested in the same manner. The results are shown in Table 2.
  • the cooling device of the present invention has high moisture resistance and can maintain its function even after a long time.
  • the cooling device of the present invention can be used, for example, as a cooling device for a small communication terminal in which a thermal countermeasure problem has become prominent.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

La présente invention concerne un dispositif de refroidissement qui est constitué par un premier film d'étanchéité, un second film d'étanchéité, et un matériau céramique absorbant la chaleur. Le dispositif de refroidissement est caractérisé en ce que : le premier film d'étanchéité et le second film d'étanchéité sont stratifiés l'un sur autre ; et le matériau céramique absorbant la chaleur est appliqué entre le premier film d'étanchéité et le second film d'étanchéité, et est isolé, lesdits premier et second films d'étanchéité ayant été stratifiés l'un sur l'autre.
PCT/JP2016/067839 2015-07-07 2016-06-15 Dispositif de refroidissement WO2017006726A1 (fr)

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JP2017527152A JPWO2017006726A1 (ja) 2015-07-07 2016-06-15 冷却デバイス

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JP2015135982 2015-07-07
JP2015-135982 2015-07-07

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WO2017006726A1 true WO2017006726A1 (fr) 2017-01-12

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111306405A (zh) * 2020-02-24 2020-06-19 四川航天系统工程研究所 一种基于化学热源的一次性主动保温组件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163510A (ja) * 2009-01-14 2010-07-29 Institute Of Physical & Chemical Research 蓄熱材
JP2013084710A (ja) * 2011-10-07 2013-05-09 Nikon Corp 蓄熱体、電子機器および電子機器の製造方法
JP2014049536A (ja) * 2012-08-30 2014-03-17 Murata Mfg Co Ltd 電子機器
WO2014155898A1 (fr) * 2013-03-25 2014-10-02 パナソニック株式会社 Feuille isolante et son procédé de fabrication
JP2014198645A (ja) * 2013-03-29 2014-10-23 積水化学工業株式会社 複合酸化バナジウム粒子の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163510A (ja) * 2009-01-14 2010-07-29 Institute Of Physical & Chemical Research 蓄熱材
JP2013084710A (ja) * 2011-10-07 2013-05-09 Nikon Corp 蓄熱体、電子機器および電子機器の製造方法
JP2014049536A (ja) * 2012-08-30 2014-03-17 Murata Mfg Co Ltd 電子機器
WO2014155898A1 (fr) * 2013-03-25 2014-10-02 パナソニック株式会社 Feuille isolante et son procédé de fabrication
JP2014198645A (ja) * 2013-03-29 2014-10-23 積水化学工業株式会社 複合酸化バナジウム粒子の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111306405A (zh) * 2020-02-24 2020-06-19 四川航天系统工程研究所 一种基于化学热源的一次性主动保温组件
CN111306405B (zh) * 2020-02-24 2021-08-20 四川航天系统工程研究所 一种基于化学热源的一次性主动保温组件

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