WO2017004905A1 - 一种光罩及彩膜基板的制备方法 - Google Patents

一种光罩及彩膜基板的制备方法 Download PDF

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WO2017004905A1
WO2017004905A1 PCT/CN2015/091891 CN2015091891W WO2017004905A1 WO 2017004905 A1 WO2017004905 A1 WO 2017004905A1 CN 2015091891 W CN2015091891 W CN 2015091891W WO 2017004905 A1 WO2017004905 A1 WO 2017004905A1
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Prior art keywords
light transmittance
layer
spacer
photomask
insulating layer
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PCT/CN2015/091891
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English (en)
French (fr)
Inventor
赵闯
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深圳市华星光电技术有限公司
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Priority to US14/897,705 priority Critical patent/US10288928B2/en
Publication of WO2017004905A1 publication Critical patent/WO2017004905A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters
    • G02B5/223—Absorbing filters containing organic substances, e.g. dyes, inks or pigments
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image

Definitions

  • the present invention relates to the field of display technologies, and in particular to a method for preparing a photomask and a color filter substrate.
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • the TFT-LCD is mainly composed of an array substrate having an array of TFTs, a color filter substrate of the array substrate, and liquid crystal molecules encapsulated between the array substrate and the color filter substrate.
  • the preparation process of the color film substrate is as follows: first, a black matrix is formed by one patterning process; on the black matrix, three patterning processes are performed to form red color resistance, green color resistance and blue color resistance, respectively; A plate electrode as a common electrode is then formed; finally, a spacer is formed by one to two patterning processes over the common electrode.
  • the preparation process of the color TFT substrate of the existing TFT-LCD is complicated, and the preparation efficiency of the TFT-LCD is lowered.
  • IPS In-Plane Switching
  • An object of the present invention is to provide a method for preparing a photomask and a color filter substrate, which can simplify the preparation process of the color filter substrate and improve the production efficiency of the color filter substrate.
  • a first aspect of the invention provides a photomask comprising:
  • first portion of the first light transmittance a first portion of the first light transmittance, a second portion of the second light transmittance, and a third portion of the third light transmittance, the first portion corresponding to a flat layer of the color filter substrate, and the second portion corresponding to the color
  • the first light transmittance is greater than the second light transmittance, and the second light transmittance is greater than the third light transmittance.
  • the flat layer, the auxiliary spacer and the main spacer of the color film substrate can be formed by using only the photomask provided by the embodiment of the invention, which greatly simplifies the preparation process of the color film substrate. The manufacturing cost of the color film substrate is reduced.
  • a second aspect of the invention provides a method for preparing a color filter substrate, comprising:
  • the photomask includes a first portion of the first light transmittance and a second portion of the second light transmittance And a third portion of the third light transmittance, the first portion corresponding to the flat layer of the color filter substrate, the second portion corresponding to the auxiliary spacer of the color filter substrate, and the third portion corresponding to the color film
  • the photomask includes a first portion of the first light transmittance and a second portion of the second light transmittance And a third portion of the third light transmittance, the first portion corresponding to the flat layer of the color filter substrate, the second portion corresponding to the auxiliary spacer of the color filter substrate, and the third portion corresponding to the color film.
  • the first light transmittance is greater than the second light transmittance, and the second light transmittance is greater than the third light transmittance.
  • the flat layer has a thickness of 1 to 5 ⁇ m
  • the main spacer has a height of 1 to 4 ⁇ m.
  • the height of the auxiliary spacer is smaller than the height of the main spacer.
  • the material of the insulating layer is one or more of nitrogen oxide, silicon oxide, and nitrogen silicide.
  • the material of the insulating layer is a photoresist.
  • the insulating layer is patterned by a photomask, and the flat layer, the auxiliary spacer and the main spacer are formed:
  • the photoresist layer corresponding to the first portion of the mask is completely removed, the corresponding photoresist layer of the second portion is partially removed, and the photoresist layer corresponding to the third portion is Fully reserved;
  • the corresponding photoresist layer of the second portion of the photomask is completely removed, and the corresponding photoresist layer of the third portion is partially removed;
  • the corresponding photoresist layer of the third portion is completely removed to form a main spacer.
  • the insulating layer is patterned by a photomask, and the flat layer, the auxiliary spacer and the main spacer are formed:
  • the insulating layer is exposed once by a photomask, and after the insulating layer is developed, a flat layer, a secondary spacer, and a main spacer are simultaneously formed.
  • FIG. 1 is a schematic structural view of a photomask provided by an embodiment of the present invention.
  • FIG. 2 is a schematic structural view of a color filter substrate prepared by an embodiment of the present invention.
  • FIG. 3 is a flow chart of a method for preparing a color filter substrate according to an embodiment of the present invention.
  • FIG. 4 to FIG. 6 are schematic diagrams showing a process of preparing a color filter substrate according to an embodiment of the present invention.
  • the embodiment of the invention provides a reticle 1 .
  • the reticle 1 comprises:
  • the first portion 11 of the first light transmittance, the second portion 12 of the second light transmittance, and the third portion 13 of the third light transmittance corresponds to the flat layer 3 of the color filter substrate
  • the second portion 12 corresponds to the auxiliary spacer 4 of the color filter substrate
  • the third portion 13 corresponds to the main spacer 5 of the color filter substrate.
  • the flat layer 3, the auxiliary spacer 4 and the main spacer 5 of the color filter substrate can be formed by using only the reticle 1, which greatly simplifies the preparation process of the color filter substrate and reduces the preparation cost of the color filter substrate. .
  • the flat layer 3 is formed on the basis of the substrate structure 2 such as a black matrix or a color resist.
  • a secondary spacer 4 and a main spacer 5 having a height greater than the auxiliary spacer 4 are formed on the flat layer 3.
  • the flat layer 3, the auxiliary spacer 4 and the main spacer 5 can be integrally formed.
  • the first transmittance corresponding to the first portion 11 of the preparation flat layer 3 is greater than the second transmittance corresponding to the second portion 12 of the preparation auxiliary spacer 4.
  • the height of the main spacer 5 is greater than the auxiliary spacer 4, and therefore, the second transmittance corresponding to the second portion 12 of the auxiliary spacer 4 is greater than the third portion 13 corresponding to the main spacer 5 Three transmittance.
  • the embodiment of the present invention does not limit the light transmittance of each part, and is applicable to the embodiment of the present invention as long as the first light transmittance is greater than the second light transmittance and the second light transmittance is greater than the third light transmittance.
  • an embodiment of the present invention further provides a method for preparing a color filter substrate by using the photomask 1 described above. As shown in FIG. 3, the method includes:
  • Step S101 forming an insulating layer.
  • an insulating layer 6 is formed by coating or the like.
  • the insulating layer 6 may be made of a transparent, insulating organic material such as one or more of nitrogen oxide (NOx), silicon oxide (SiOx), and silicon silicide (SiNx), and may also be insulated and transparent.
  • the photoresist is formed.
  • Step S102 using a photomask to pattern the insulating layer to form a flat layer, a secondary spacer, and a main spacer.
  • the patterning process includes at least the following processes:
  • Photoresist also known as photoresist, is a light-sensitive mixed liquid composed of three main components: photosensitive resin, sensitizer (see spectral sensitizing dye) and solvent.
  • the photoresist is a mixed liquid, after the photoresist is applied, the photoresist needs to be pre-baked and cured to convert the liquid photoresist into a solid to form an embodiment of the present invention.
  • the photoresist layer 7 is exposed by the photomask 1.
  • the exposure process may use ultraviolet light having a wavelength of 200 nm to 450 nm, and the length of the exposure depends on the type and thickness of the photoresist, and the control may vary from 20 seconds to 180 seconds.
  • the photoresist layer 7 corresponding to the first portion 11 of the mask 1 should be sufficiently exposed. Thereafter, the photoresist layer 7 after the exposure is developed. Since the photoresist layer 7 corresponding to the first portion 11 of the reticle 1 is sufficiently exposed, the photoresist layer 7 corresponding to the first portion 11 of the reticle 1 is completely removed after development; the second portion 12 of the reticle 1 The second light transmittance is smaller than the first light transmittance of the first portion 11, so that the surface portion of the photoresist layer 7 corresponding to the second portion 12 is exposed, and after development, the photoresist layer 7 corresponding to the second portion 12 is partially
  • the third light transmittance of the third portion 13 is the smallest, even about 0 (close to completely opaque), so the photoresist layer 7 corresponding to the third portion 13 is hardly exposed to light, after development, the third portion The corresponding photoresist layer 7 is substantially completely retained.
  • the photoresist layer 7 corresponding to the first portion 11 of the mask 1 is completely removed, and the insulating layer 6 corresponding to this portion of the photoresist layer 7 is exposed. Therefore, the insulating layer 6 can be etched for the first time by using the corresponding etching liquid to form the flat layer 3, as shown in FIG.
  • the photoresist layer 7 is again exposed and developed. Since the pattern of the photomask 1 has been completely transferred to the photoresist layer 7 in the first exposure, the re-exposure does not require the use of the photomask 1, but directly irradiates the color filter substrate with ultraviolet light as a whole. After the re-exposure, the photoresist layer 7 corresponding to the second portion 12 of the reticle 1 is completely exposed, and the photoresist layer 7 corresponding to the third portion 13 is exposed to a large thickness, and only the surface portion is exposed. Therefore, after development, the photoresist layer 7 corresponding to the second portion 12 of the mask 1 is completely removed, and the photoresist layer 7 corresponding to the third portion 13 is partially removed.
  • the photoresist layer 7 corresponding to the second portion 12 of the mask 1 is completely removed, and the corresponding insulating layer 6 of the second portion 12 is exposed.
  • the insulating layer 6 may be etched a second time to form the auxiliary spacer 4 having a height smaller than that of the main spacer 5, as shown in FIG.
  • the thickness of the flat layer 3 is further reduced at this time. Therefore, when the insulating layer 6 is first etched to form the flat layer 3, the thickness of the flat layer 3 can be more retained. When the auxiliary spacer 4 is to be formed, the remaining flat layer 3 is removed together.
  • the main spacer 5 having the highest height can be formed, as shown in FIG.
  • the entire color filter substrate may be etched to appropriately reduce the flat layer 3.
  • the patterning process of forming the flat layer 3, the auxiliary spacer 4 and the main spacer 5 by the insulating layer 6 is relatively simple. It is only necessary to use the reticle 1 to control the irradiation duration of the ultraviolet light, and to expose the insulating layer 6 once, so that the corresponding insulating layer 6 of the first portion 11 of the reticle 1 is exposed, and the insulating layer 6 corresponding to the second portion 12 is exposed. The degree of exposure of the insulating layer 6 corresponding to the third portion 13 is sequentially reduced. Thereafter, after the insulating layer 6 is developed, the flat layer 3, the auxiliary spacer 4, and the main spacer 5 can be simultaneously formed in accordance with the degree of exposure of the insulating layer 6 corresponding to each portion.
  • the thickness of the flat layer 3 may be 1 to 5 ⁇ m
  • the height of the main spacer 5 may be 1 to 4 ⁇ m
  • the height of the auxiliary spacer 4 is smaller than the height of the main spacer 5.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Filters (AREA)
  • Liquid Crystal (AREA)

Abstract

一种光罩(1)及彩膜基板的制备方法，属于显示技术领域，可简化彩膜基板的制备过程，提高彩膜基板的生产效率。该光罩(1)包括：第一透光率的第一部分(11)、第二透光率的第二部分(12)和第三透光率的第三部分(13)，所述第一部分(11)对应彩膜基板的平坦层(3)，所述第二部分(12)对应所述彩膜基板的辅隔垫物(4)，所述第三部分(13)对应所述彩膜基板的主隔垫物(5)。

Description

一种光罩及彩膜基板的制备方法
本申请要求享有2015年7月7日提交的名称为“一种光罩及彩膜基板的制备方法”的中国专利申请CN201510393712.9的优先权，其全部内容通过引用并入本文中。
技术领域
本发明涉及显示技术领域，具体地说，涉及一种光罩及彩膜基板的制备方法。
背景技术
在平板显示装置中，薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display，简称TFT-LCD)具有体积小、功耗低、制造成本相对较低和低辐射等特点，在当前的平板显示器市场占据了主导地位。
TFT-LCD主要由具有阵列排布的TFT的阵列基板、与阵列基板对盒的彩膜基板以及封装于阵列基板和彩膜基板之间的液晶分子构成。现在TFT-LCD行业中，彩膜基板的制备流程大致如下：首先通过一次构图工艺形成黑矩阵；在黑矩阵之上，进行三次构图工艺，分别形成红色色阻、绿色色阻和蓝色色阻；之后形成作为公共电极的平板电极；最后在公共电极之上通过一至两次构图工艺形成隔垫物。显然，现有的TFT-LCD的彩膜基板的制备过程较复杂，降低了TFT-LCD的制备效率。
其中，对于平面转换(In-Plane Switching，简称IPS)LCD而言，彩膜基板之上无需形成平板电极，取而代之的为平坦层，但仍无法改变彩膜基板的制备过程较复杂的现状。
发明内容
本发明的目的在于提供一种光罩及彩膜基板的制备方法，可简化彩膜基板的制备过程，提高彩膜基板的生产效率。
本发明第一方面提供了一种光罩，包括：
第一透光率的第一部分、第二透光率的第二部分和第三透光率的第三部分，所述第一部分对应彩膜基板的平坦层，所述第二部分对应所述彩膜基板的辅隔垫物，所述第三部分对应所述彩膜基板的主隔垫物。
其中，所述第一透光率大于所述第二透光率，所述第二透光率大于所述第三透光率。
本发明带来了以下有益效果：仅利用本发明实施例提供的光罩，就可形成彩膜基板的平坦层、辅隔垫物和主隔垫物，大大简化了彩膜基板的制备过程，降低了彩膜基板的制备成本。
本发明第二方面提供了一种彩膜基板的制备方法，包括：
形成绝缘层；
利用光罩，对所述绝缘层进行构图工艺，形成平坦层、辅隔垫物和主隔垫物，其中，光罩包括第一透光率的第一部分、第二透光率的第二部分和第三透光率的第三部分，所述第一部分对应彩膜基板的平坦层，所述第二部分对应所述彩膜基板的辅隔垫物，所述第三部分对应所述彩膜基板的主隔垫物。
其中，所述第一透光率大于所述第二透光率，所述第二透光率大于所述第三透光率。
其中，所述平坦层的厚度为1至5μm，所述主隔垫物的高度为1至4μm。
其中，所述辅隔垫物的高度小于所述主隔垫物的高度。
其中，所述绝缘层的材质为氮氧化物、硅氧化物、氮硅化物中的一种或多种。
其中，所述绝缘层的材质为光刻胶。
其中，利用光罩，对所述绝缘层进行构图工艺，形成平坦层、辅隔垫物和主隔垫物包括：
在所述绝缘层之上形成光刻胶层；
利用所述光罩，对所述光刻胶层进行曝光；
对曝光之后的光刻胶层进行显影，所述光罩的第一部分对应的光刻胶层被完全去除，第二部分对应的光刻胶层被部分去除，第三部分对应的光刻胶层完全保留；
对绝缘层进行首次刻蚀，形成平坦层；
对光刻胶层进行再次曝光并显影，所述光罩的第二部分对应的光刻胶层被完全去除，第三部分对应的光刻胶层被部分去除；
对绝缘层进行第二次刻蚀，形成辅隔垫物；
完全去除第三部分对应的光刻胶层，形成主隔垫物。
其中，利用光罩，对所述绝缘层进行构图工艺，形成平坦层、辅隔垫物和主隔垫物包括：
利用光罩，对所述绝缘层进行一次曝光，对所述绝缘层进行显影后，同时形成平坦层、辅隔垫物和主隔垫物。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要的附图做简单的介绍：
图1是本发明实施例提供的光罩的结构示意图；
图2是本发明实施例制备的彩膜基板的结构示意图；
图3是本发明实施例提供的彩膜基板的制备方法流程图；
图4至图6是本发明实施例提供的彩膜基板的制备过程示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
本发明实施例提供了一种光罩1，如图1所示，该光罩1包括：
第一透光率的第一部分11、第二透光率的第二部分12和第三透光率的第三部分13。具体的，第一部分11对应彩膜基板的平坦层3，第二部分12对应彩膜基板的辅隔垫物4，第三部分13对应彩膜基板的主隔垫物5。
显然，仅利用该光罩1，就可形成彩膜基板的平坦层3、辅隔垫物4和主隔垫物5，大大简化了彩膜基板的制备过程，降低了彩膜基板的制备成本。
如图2所示，对于彩膜基板而言，平坦层3形成在黑矩阵、彩色色阻等衬底结构2的基础上。平坦层3之上形成有辅隔垫物4、以及高度大于辅隔垫物4的主隔垫物5。显然，平坦层3、辅隔垫物4和主隔垫物5可以一体成型。
由于平坦层3、辅隔垫物4和主隔垫物5的高度不一，因此对于可同时制备平坦层3、辅隔垫物4和主隔垫物5的光罩1而言，各部分的透光率应不相同。其中，对应制备平坦层3的第一部分11的第一透光率大于对应制备辅隔垫物4的第二部分12的第二透光率。 而主隔垫物5的高度大于辅隔垫物4，因此，对应制备辅隔垫物4的第二部分12的第二透光率大于对应制备主隔垫物5的第三部分13的第三透光率。
本发明实施例不对各部分的透光率进行限制，只要满足第一透光率大于第二透光率、第二透光率大于第三透光率的情况，都适用于本发明实施例。
进一步地，本发明实施例还提供了一种利用上述光罩1，制备彩膜基板的方法。如图3所示，该方法包括：
步骤S101、形成绝缘层。
如图4所示，在已经形成了黑矩阵、彩色色阻等衬底结构2的基础上，通过涂覆等方式，形成一层绝缘层6。绝缘层6可选透明的、绝缘的有机物制成，例如氮氧化物(NOx)、硅氧化物(SiOx)、氮硅化物(SiNx)中的一种或多种，也可利用同样绝缘且透明的光刻胶形成。
步骤S102、利用光罩，对绝缘层进行构图工艺，形成平坦层、辅隔垫物和主隔垫物。
对于使用氮氧化物、硅氧化物、氮硅化物制成的绝缘层6而言，对其进行构图工艺至少包括以下流程：
首先，在绝缘层6之上，通过涂覆等方式形成光刻胶层7。光刻胶又称光致抗蚀剂，是由感光树脂、增感剂(见光谱增感染料)和溶剂三种主要成分组成的对光敏感的混合液体。
由于光刻胶是一种混合液体，因此在涂覆上光刻胶之后，首先需要对光刻胶进行预烘烤、固化处理，以将液体的光刻胶转变为固体，形成本发明实施例所需的光刻胶层7。
之后，如图4所示，利用光罩1，对光刻胶层7进行曝光。曝光过程可采用波长200nm至450nm的紫外光，曝光时长视光刻胶的类型及厚度而定，控制在20秒至180秒不等。
第一次对光刻胶进行曝光时，应当充分曝光光罩1的第一部分11对应的光刻胶层7。之后，对曝光之后的光刻胶层7进行显影。由于光罩1的第一部分11对应的光刻胶层7受到充分曝光，因此显影之后，光罩1的第一部分11对应的光刻胶层7被完全去除；光罩1的第二部分12的第二透光率小于第一部分11的第一透光率，因此第二部分12对应的光刻胶层7的表层部分被曝光，经过显影，第二部分12对应的光刻胶层7被部分去除；而第三部分13的第三透光率最小，甚至为0左右(接近完全不透光)，因此第三部分13对应的光刻胶层7几乎没有受到光照，显影之后，第三部分13对应的光刻胶层7基本上完全保留。
显影之后，对应光罩1的第一部分11的光刻胶层7被完全去除，这一部分光刻胶层7对应的绝缘层6暴露在外。因此，可利用对应的刻蚀液，对绝缘层6进行首次刻蚀，形成平坦层3，如图5所示。
之后，对光刻胶层7进行再次曝光并显影。由于第一次曝光中，光罩1的图形已经完全转移到光刻胶层7上，因此再次曝光无需使用光罩1，而是直接用紫外光整体照射彩膜基板。再次曝光之后，光罩1的第二部分12对应的光刻胶层7受到完全曝光，而第三部分13对应的光刻胶层7由于厚度较大，仅表层部分受到曝光。因此，显影之后，光罩1的第二部分12对应的光刻胶层7被完全去除，第三部分13对应的光刻胶层7被部分去除。
由于再次曝光并显影之后，光罩1的第二部分12对应的光刻胶层7被完全去除，第二部分12对应的绝缘层6被暴露在外。此时，可对绝缘层6进行第二次刻蚀，形成高度小于主隔垫物5的辅隔垫物4，如图6所示。
需要说明的是，由于在形成辅隔垫物4时，平坦层3部分也暴露在外、受到刻蚀液的刻蚀，因此，此时平坦层3的厚度会进一步减少。所以，对绝缘层6进行首次刻蚀形成平坦层3时，可将平坦层3的厚度多保留一些，待形成辅隔垫物4时，将多保留的平坦层3一并去除。
最后，只要完全去除第三部分13对应的光刻胶层7，即可形成高度最大的主隔垫物5，如图2所示。
形成了主隔垫物5之后，若平坦层3的厚度、辅隔垫物4的高度和主隔垫物5的高度大于设计要求，可将彩膜基板整体进行刻蚀，适当减少平坦层3的厚度、辅隔垫物4的高度和主隔垫物5的高度。
而对于利用光刻胶形成的绝缘层6而言，利用绝缘层6形成平坦层3、辅隔垫物4和主隔垫物5的构图工艺较为简单。仅需要利用光罩1，控制紫外光的照射时长，对绝缘层6进行一次曝光，使得光罩1的第一部分11对应的绝缘层6曝光的程度、第二部分12对应的绝缘层6曝光的程度、第三部分13对应的绝缘层6曝光的程度依次减少。之后，对绝缘层6进行显影后，即可依照各部分对应的绝缘层6曝光的程度的多少，同时形成平坦层3、辅隔垫物4和主隔垫物5。
最后形成的彩膜基板中，平坦层3的厚度可为1至5μm，主隔垫物5的高度可为1至4μm，辅隔垫物4的高度小于主隔垫物5的高度。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发 明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (10)

  1. 一种光罩，包括：
    第一透光率的第一部分、第二透光率的第二部分和第三透光率的第三部分，所述第一部分对应彩膜基板的平坦层，所述第二部分对应所述彩膜基板的辅隔垫物，所述第三部分对应所述彩膜基板的主隔垫物。
  2. 根据权利要求1所述的光罩，其中，所述第一透光率大于所述第二透光率，所述第二透光率大于所述第三透光率。
  3. 一种彩膜基板的制备方法，包括：
    形成绝缘层；
    利用光罩，对所述绝缘层进行构图工艺，形成平坦层、辅隔垫物和主隔垫物，其中，所述光罩包括第一透光率的第一部分、第二透光率的第二部分和第三透光率的第三部分，所述第一部分对应所述彩膜基板的平坦层，所述第二部分对应所述彩膜基板的辅隔垫物，所述第三部分对应所述彩膜基板的主隔垫物。
  4. 根据权利要求3所述的方法，其中，
    所述第一透光率大于所述第二透光率，所述第二透光率大于所述第三透光率。
  5. 根据权利要求4所述的方法，其中，
    所述平坦层的厚度为1至5μm，所述主隔垫物的高度为1至4μm。
  6. 根据权利要求5所述的方法，其中，
    所述辅隔垫物的高度小于所述主隔垫物的高度。
  7. 根据权利要求6所述的方法，其中，
    所述绝缘层的材质为氮氧化物、硅氧化物、氮硅化物中的一种或多种。
  8. 根据权利要求6所述的方法，其中，
    所述绝缘层的材质为光刻胶。
  9. 根据权利要求7所述的方法，其中，利用光罩，对所述绝缘层进行构图工艺，形成平坦层、辅隔垫物和主隔垫物包括：
    在所述绝缘层之上形成光刻胶层；
    利用所述光罩，对所述光刻胶层进行曝光；
    对曝光之后的光刻胶层进行显影，所述光罩的第一部分对应的光刻胶层被完全去除，第二部分对应的光刻胶层被部分去除，第三部分对应的光刻胶层完全保留；
    对绝缘层进行首次刻蚀，形成平坦层；
    对光刻胶层进行再次曝光并显影，所述光罩的第二部分对应的光刻胶层被完全去除，第三部分对应的光刻胶层被部分去除；
    对绝缘层进行第二次刻蚀，形成辅隔垫物；
    完全去除第三部分对应的光刻胶层，形成主隔垫物。
  10. 根据权利要求8所述的方法，其中，利用光罩，对所述绝缘层进行构图工艺，形成平坦层、辅隔垫物和主隔垫物包括：
    利用光罩，对所述绝缘层进行一次曝光，对所述绝缘层进行显影后，同时形成平坦层、辅隔垫物和主隔垫物。
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