WO2016201717A1 - Combined detection method and device for silicon wafer distribution state in loading region of semiconductor device - Google Patents

Abstract

A combined detection method and device for silicon wafer distribution state in a loading region of a semiconductor device. Two parallel slide rails (9, 10), centro-symmetric to an end cover (8) of a loader (3) located above a silicon wafer group (2), is disposed on the inner surface of the end cover (8); a first photoelectric sensor set and a second photoelectric sensor set/an ultrasonic wave sensor set (4, 5) are disposed at the relative location of the rails; a third photoelectric sensor set and a fourth photoelectric sensor set (6, 7) are disposed at the relative location of a U-shaped end portion of a manipulator (1) located at the circumferential side of a silicon wafer loader, wherein relative rotation and/or positioned movement could be performed between the loader and the manipulator; in a self-reception mode of a first detection sub-stage, an abnormal condition limit position pre-scanning instruction of a protruding silicon wafer is executed; in mutual reception modes of the second detection sub-stage and the third detection sub-stage, an abnormal state cyclic-scanning instruction of the protruding silicon wafer and a silicon wafer distribution state abnormal scanning instruction are executed, the abnormal distribution states such as protruding silicon wafer, stacked silicon wafer, inclined silicon wafer or no silicon wafer are scanned and detected, and multiple scanning and detection points are arranged around the loader, thereby further improving the detection precision.

Description

Silicon wafer distribution state combination detecting method and device for semiconductor device bearing region Technical field

The present invention relates to the field of semiconductor processing equipment, and more particularly to a silicon wafer distribution state combination detecting method for a semiconductor device carrying region, and to a silicon wafer distributed state combined detecting device for a semiconductor device carrying region.

technical background

The safe access and transport of silicon wafers is a very important technical indicator for large-scale integrated circuit production. In the production process, the wafer fragmentation rate caused by the transport equipment itself is usually less than one in 100,000. Moreover, as a batch-type silicon wafer heat treatment system, the wafer transfer, wafer placement and wafer take-up times required for each production process are more than that of the monolithic process system, thus the wafer transfer, wafer placement and fetching The security and reliability requirements of the film are higher.

At present, robots are widely used in the field of semiconductor integrated circuit manufacturing technology. The robot is an important device in the silicon wafer transmission system. It is used for access and transport process before and after processing, and it can accept instructions and precision. Positioning to a point in the three-dimensional or two-dimensional space for picking and placing silicon wafers, it is possible to pick and place a single wafer, and to pick and place multiple wafers.

However, when the robot picks up and puts the wafer, especially when the wafer is heated or deformed during the transfer process or heat treatment, the wafer may be in a protruding state on the carrier or in a laminated or inclined manner. In the case of a piece or a piece, there is often a collision that causes the wafer or device to be damaged, causing irreparable damage.

Please refer to FIG. 1. FIG. 1 is a schematic view showing the positional structure of a robot in the prior art during wafer transfer, wafer placement and film taking. As shown, when the silicon wafer in the silicon wafer set 2 is protruding on the carrier 3 When the abnormal state is abnormal, the movement of the robot 1 in the automatic access silicon wafer 2 is in an unsafe working state, which is very likely to cause damage to the silicon wafer 2 and the device (including the robot 1).

Therefore, after the robot 1 completes the placement of the silicon wafer or prepares to take the film, it is necessary to accurately identify the distribution state of the silicon wafer in the silicon wafer group 2 on the carrier 3, and provide an accurate countermeasure for the identified abnormal states. To achieve secure pick and place.

At present, the identification of the distribution state of the silicon wafer in the batch type silicon wafer heat treatment system generally uses a simple photoelectric signal motion scanning method to identify the distribution state of the silicon wafer on the carrier 3, and this scanning method is only for the silicon wafer group 2 When the silicon wafer is in an abnormal state such as a laminated piece, a slanted piece or a pieceless film, it has a certain detection effect, but if the silicon piece is in a protruding state on the carrier 3, it cannot be detected well, that is, through The prior art simply results in abnormal or normal results, and is prone to collision during the motion scanning process, resulting in damage to the silicon wafer or equipment, and often causes false negatives and false positives.

With the development of semiconductor integrated circuit manufacturing technology, higher requirements are placed on the safe access and transport of silicon wafers, that is, the precise control requirements for robots are also increasing. Therefore, how to quickly and accurately detect the distribution state of the silicon wafer in the bearing area of the silicon wafer semiconductor device and avoid damage of the silicon wafer and the device caused by the movement of the robot has become a technical problem to be solved by those skilled in the art.

Summary of invention

A first object of the present invention is to provide a silicon wafer distribution state combination detecting method for a semiconductor device carrying region, which can quickly and accurately detect the distribution state of the silicon wafer in the carrying region of the silicon semiconductor device, and avoid damage to the silicon wafer and the device caused by the robot movement. . A second object of the present invention is to provide a silicon wafer distribution state combination detecting device for a semiconductor device carrying region.

In order to achieve the above first object, the present invention provides a semiconductor device carrying region of silicon a sheet distribution state combination detecting method, which is disposed on an inner surface of a carrier end cover (shutter) above a silicon wafer group, and an inner surface of a carrier end cover located above the silicon wafer group, and the end cover is provided Two parallel symmetrical rails, at opposite positions of the track, are provided with first and second photosensor groups/ultrasonic sensor groups, each set of said opto-electronic/ultrasonic sensor groups comprising two working in self-receiving mode Photoelectric/ultrasonic sensor; at the opposite position of the U-shaped end of the manipulator on the circumferential side of the wafer carrier, three and fourth photoelectric/ultrasonic sensor groups are provided, each set of said photoelectric/ultrasonic sensor group comprising two An optoelectronic/ultrasonic sensor operating in an inter-acceptance mode; the method comprising the steps of:

Step S1, setting motion initialization parameters of the first and second photosensor groups/ultrasonic sensor groups and the robot, and performing initialization, wherein the initialization parameters include the horizontal step distance, the horizontal starting point position, and the termination of the photoelectric sensor group Point position; robot horizontal and / or vertical scanning speed, wafer spacing distance, each robot horizontal step distance, horizontal starting point position and end point position and up/down vertical starting point position and ending point position.

Step S2: executing an abnormal state limit position pre-scanning instruction of the silicon wafer tab; specifically:

Step S21: the first and second photoelectric/ultrasonic sensor groups are positioned corresponding to a vertical starting point and a horizontal starting point position of the first placement silicon wafer of the carrier, and the first and second photoelectric sensor groups are / The operating mode of the ultrasonic sensor group is set to the self-receiving mode;

Step S22: determining whether the silicon wafer has an abnormal state protruding from the predetermined position according to a time difference of each of the first and/or second photoelectric/ultrasonic sensor groups transmitting and receiving the optical signal in a vertical direction of the silicon wafer stack and a predetermined determination rule, if Yes, step S24 is performed; otherwise, step S23 is performed;

Step S23: controlling the first and second photoelectric/ultrasonic sensor groups to advance synchronously along a central direction of the carrying area by a predetermined horizontal step distance, and determining whether the position is a horizontal end point position; If yes, go to step S4; otherwise, go to step S22;

Step S24: measuring the obstacle distance on the blocked beam propagation path, obtaining the position parameter of the protruding state silicon wafer, and issuing the tab abnormality alarm information, and performing step S3.

Step S3: executing an abnormal state cyclic scan instruction of the silicon wafer tab; specifically:

Step S31: the robot positioning is lowered to the position where the protruding state silicon wafer exists; the working modes of the third and fourth photoelectric/ultrasonic sensor groups are set to the mutual receiving mode, and it is determined whether the position is up or down a vertical end point position; if yes, controlling the robot to advance a predetermined horizontal step distance along the center of the carrying area, step S33; if not, executing step S32;

Step S32: The robot manually descends or raises a separation distance of a silicon wafer;

Step S33: determining, according to the change in the intensity of the occlusion range, the receiving time of the horizontally-transmitted and received optical signals between the third and fourth photoelectric/ultrasonic sensor groups, and determining whether the silicon wafer at the corresponding position has an abnormal state of the tab; If yes, go to step S35; otherwise, determine whether the location is the up/down vertical end point position; if not, go to step S32; if yes, go to step S34;

Step S34; the robot advances a predetermined horizontal step distance along the center of the carrying area to determine whether the position is beyond the horizontal end point position; if yes, step S4 is performed; otherwise, step S33 is performed;

Step S35: issuing the tab abnormality alarm information, and proceeding to step S32.

Step S4: executing a silicon wafer distribution state abnormal scan instruction, determining whether there is a slanting piece according to a distribution state of signal intensity in the scan detection area according to feedback values of mutual feedback and reception between the third and fourth photoelectric/ultrasonic sensor groups, Abnormal state of laminations and/or empty sheets.

Preferably, the predetermined determination rule in the step S22 is:

A. If the first and second photoelectric/ultrasonic sensor groups have no obstacles detected in the silicon wafer placement area in which the limit position is perpendicular to the silicon wafer direction, there is no abnormal state in which the predetermined position is protruded at the corresponding position;

B. If the first and second photoelectric/ultrasonic sensor groups detect obstacles in the silicon wafer placement area where the limit position is perpendicular to the silicon wafer direction, the corresponding position has an abnormal state protruding from the predetermined position;

C. If the first and second opto-electronic/ultrasonic sensor groups have a group of photoelectric sensor groups detecting the obstacle in the wafer placement area where the limit position is perpendicular to the wafer direction, the determination is an indeterminate state, and the detection is repeated or manually repeated. .

Preferably, the first rotating unit further includes an annular sliding rail coaxial with the center of the carrier, the first rotating unit driving the two parallel sliding rails along the ring The slide rail rotates, and has N rotation detection stop positions on the entire circumference of the carrier, and the step S2 is performed once at each detection position to obtain a corresponding set of detection results; finally, the N sets of detection results are compared with Calculate to obtain an abnormal state distribution of the final silicon tab, where N is a positive integer greater than or equal to 2.

Preferably, the rotation angles of two adjacent ones of the N position points are the same, and the selection is set as follows: A. When the remainder of (360°/set rotation angle)=0:

Cumulative detection position number = 360 ° / set rotation angle

Actual rotation angle = set rotation angle

B. When the remainder of (360°/set rotation angle) ≠0:

The total number of detected positions = (360 ° / set rotation angle) rounded (after rounding off the decimal point) +1

Actual rotation angle = 360° / number of cumulative detection positions

If the detected position coordinate value generated by the rotation start point and the set rotation angle conflicts with the coordinate position of the carrier support point, the start point and the rotation angle value need to be reset.

Preferably, in the step S3, the horizontal starting position of the first and second photoelectric/ultrasonic sensor groups is related to the position when the silicon wafer is in the drop limit position, and the horizontal end point position and the support structure of the carrier The parameters are related and related; and the horizontal step distance is equal or gradually decreased each time in the horizontal direction.

Preferably, the step S4 includes:

Step S41: obtaining a motion scanning area for judging the oblique piece, the lamination piece and the empty piece according to the thickness of the silicon wafer and the separation distance of the adjacent silicon wafers;

Step S42: the robot is positioned at a horizontal starting point position and an upper/lower vertical ending point position;

Step S43: sequentially determining whether the corresponding silicon wafer placement position is oblique according to a preset detection area for transmitting and receiving optical signals between the third and fourth photoelectric/ultrasonic sensor groups and an optical signal shielding width of the region. The abnormal state of the slice, the lamination and/or the empty slice; if yes, step S45 is performed; otherwise, step S44 is directly executed;

Step S44: the robot sequentially descends or rises the spacing distance of a silicon wafer to determine whether the position is an up/down vertical end point position; if so, ends; otherwise, step S43 is performed;

Step S45: The abnormal state information of the oblique piece, the lamination and/or the empty piece is issued at the corresponding position, and step S44 is performed.

Preferably, the carrier or the robot comprises a second rotating unit, the second rotating unit rotates the robot about the carrier, and has M parts on the entire circumference of the carrier. Rotating the detection stop position, performing the step S3 once at each detection position / or step S4, a set of corresponding detection results are obtained; finally, the M sets of detection results are ANDed to obtain a final silicon distribution state abnormality result; wherein M is greater than or equal to 2 positive integers.

Preferably, the rotation angles of the two adjacent positions of the M position points are the same, and the selection is set as follows: A. When the remainder of (360°/set rotation angle)=0:

Cumulative detection position number = 360 ° / set rotation angle

Actual rotation angle = set rotation angle

B. When the remainder of (360°/set rotation angle) ≠0:

The total number of detected positions = (360 ° / set rotation angle) rounded (after rounding off the decimal point) +1

Actual rotation angle = 360° / number of cumulative detection positions

If the detected position coordinate value generated by the rotation start point and the set rotation angle conflicts with the coordinate position of the carrier support point, the start point and the rotation angle value need to be reset.

In order to achieve the above second object, the present invention provides a silicon wafer distribution state combination detecting device for a semiconductor device carrying region, comprising first and second photoelectric/ultrasonic sensor groups, third and fourth photoelectric/ultrasonic sensor groups, a control unit and an alarm unit; the first and second photoelectric/ultrasonic sensor groups are respectively disposed at opposite positions of two parallel slide rails symmetrical with the center of the end cover, and are controlled by the drive unit along the parallel slide rails Synchronous horizontal movement; each set of the photoelectric sensor includes a transmitting end and a receiving end; the first and second photoelectric/ultrasonic sensor groups operate in a self-receiving mode; and the third and fourth photoelectric/ultrasonic sensor groups are respectively disposed in the The U-shaped end of the manipulator on the circumferential side of the carrier is in a relative position and moves with the robot, moves in a horizontal and/or vertical preset direction and performs scanning detection; each set of the photoelectric sensor includes a transmitting end and receiving The third and fourth photosensor groups operate in an inter-reception mode; the control unit is configured to set the first, second, third The working mode of the fourth photoelectric sensor group, or the first and second ultrasonic sensing And the working modes of the third and fourth ultrasonic sensor groups, start detecting and processing the obtained feedback signal strength and distribution result, and obtaining an abnormal state distribution of the silicon wafer on the carrier; wherein the abnormality The state includes a state of the silicon bump, the slanting sheet, the lamination, and/or the blank; the alarm unit is coupled to the control unit, and the control unit controls the opening and closing of the alarm unit according to the abnormal state distribution.

Preferably, the method further includes a first rotating unit for driving the two parallel sliding rails to rotate along the circular sliding rail, and a second rotating unit for driving the robot to surround the carrier Make a relative rotational motion.

It can be seen from the above technical solution that the photodetection method and device for the silicon wafer distribution state of the semiconductor device carrying region provided by the present invention are first located at the end cap after two stages, that is, after the wafer transfer sheet is completed and before the wafer is taken. The working modes of the first and second photoelectric/ultrasonic sensor groups are set to be in a self-receiving mode, performing an abnormal state limit position pre-scanning instruction of the silicon tab; then, the third and fourth photoelectric/ultrasonic waves to be placed on the robot The operation mode of the sensor group is set to the mutual reception mode, and the abnormal state cyclic scan instruction of the silicon wafer is performed; finally, the third and fourth photoelectric/ultrasonic sensor groups located on the robot perform the silicon distribution state abnormal scan instruction. Therefore, the present invention can quickly and accurately detect whether the silicon wafer has a silicon wafer protrusion, a diagonal piece, a lamination and/or an empty piece in the region of the carrier for diagnosis, and arrange a plurality of scan detection around the carrier. The point further improves the detection accuracy, and the damage of the silicon wafer and the device caused by the movement of the robot is well avoided. The experiment proves that the technical solution of the invention is simple to implement and the effect is good.

DRAWINGS

1 is a schematic view showing the position of a robot in the prior art during wafer transfer, wafer placement, and wafer taking.

2 is a schematic view showing the structure of a carrier end cover (Shutter) located above the silicon wafer group in the prior art.

3 is a first and second opto-electronic/ultrasonic sensor group of a silicon wafer distribution state combination detecting device of a semiconductor device carrying region according to an embodiment of the present invention, which are respectively located in parallel slide rails on the inner surface of the carrier end cover above the silicon wafer group; on;

4 is a schematic view showing the structure of the third and fourth photoelectric/ultrasonic sensor groups of the silicon wafer distribution state combination detecting device in the semiconductor device carrying region according to the embodiment of the present invention, which are respectively located at the opposite positions of the U-shaped end portion of the robot.

FIG. 5 is a schematic diagram showing the positional relationship between the first and second photoelectric/ultrasonic sensor groups when the silicon wafer is in the falling limit position of the silicon wafer according to the embodiment of the present invention; FIG.

6 is a schematic structural view showing the positional relationship between the silicon wafer and the third and fourth photoelectric/ultrasonic sensor groups when the silicon wafer is at the falling limit position of the silicon wafer according to the embodiment of the present invention;

FIG. 7 is a schematic diagram showing the calculation principle of the minimum safe distance between the center of the silicon wafer in the embodiment of the present invention;

FIG. 8 is a schematic flow chart of a preferred embodiment of a silicon wafer distribution state combination detecting method for a semiconductor device carrying region according to the present invention; FIG.

FIG. 9 is a flowchart of overall control of combined detection of silicon wafer distribution states in a semiconductor device carrying area according to an embodiment of the present invention;

FIG. 10 is a schematic flowchart of a pre-scanning instruction process of a tab abnormal state according to an embodiment of the present invention;

FIG. 11 is a schematic diagram showing the movement trajectory of the first and second photoelectric/ultrasonic sensor groups in the pre-scanning process of detecting the abnormal distribution of the silicon wafer in the embodiment of the present invention; FIG.

FIG. 12 is a schematic diagram showing the principle of a detection process in which an abnormal abnormal distribution state exists in an embodiment of the present invention;

FIG. 13 is a schematic diagram of a flow control process of a tab abnormal state cyclic scan instruction in an embodiment of the present invention;

FIG. 14 is a schematic diagram showing the movement trajectory of the third and fourth photoelectric/ultrasonic sensor groups in detecting the abnormal distribution of the silicon wafer in the embodiment of the present invention; FIG.

15 is a flow chart of a method for performing an abnormal scan of a silicon wafer distribution state according to the method of the present invention

FIG. 16 is a schematic diagram of a specific control flow of a preferred embodiment for determining whether there is an abnormal state of a slanting piece, a lamination, and/or an empty piece in the embodiment of the present invention.

17 is a schematic diagram of positional relationship parameters of a silicon wafer and a carrier according to an embodiment of the present invention;

[reference mark in the figure]:

Robot 1

Wafer group 2

Carrier 3

First photosensor group / ultrasonic sensor 4

Second photosensor group / ultrasonic sensor 5

Third photoelectric sensor group / ultrasonic sensor 6

Fourth photoelectric sensor group / ultrasonic sensor 7

End cap 8

Parallel slides 9

Ring slide 10

Summary of the invention

In order to make the content of the present invention clearer and easier to understand, the contents of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the invention is not limited to the specific embodiment, and general replacements well known to those skilled in the art are also encompassed within the scope of the invention. Secondly, the present invention is described in detail using a schematic diagram. When the examples of the present invention are described in detail, the schematic diagram is not in accordance with The general proportions are partially enlarged and should not be construed as limiting the invention.

Referring to FIG. 2, FIG. 3 and FIG. 4, the silicon wafer distribution state combination detecting method of the semiconductor device carrying region provided by the present invention is disposed on the inner surface of the carrier end cover 8 located above the silicon wafer group 3, and is provided with Two parallel slide rails 9 symmetrical at the center of the end cover 8 are provided with first and second photosensor groups 4, 5 (or first and second ultrasonic sensor groups 4, 5) at opposite positions of the two parallel slide rails 9. Since the first and second photosensor groups 4, 5 and the first and second ultrasonic sensor groups 4, 5 operate in the same principle, the following description will be made only with the first and second photosensor groups 4, 5); The drive unit (not shown) controls its horizontal movement along the parallel slides 9; the first and second photosensor groups 4, 5 operate in a self-receiving mode (as shown in Figure 3).

Further, as shown in FIG. 4, third and fourth photosensor groups 6, 7 (or third and fourth) are disposed at the U-shaped end portions of the robot 1 located at the circumferential side of the wafer carrier 3 The ultrasonic sensor groups 6, 7, since the third and fourth photosensor groups 6, 7 and the third and fourth ultrasonic sensor groups 6, 7 operate in the same manner, only the third and fourth photosensor groups 6, 7 are used below. To be explained, the third and fourth photosensor groups 6, 7 operate in the mutual reception mode.

A control unit (not shown) is used to initiate detection and process the obtained photoelectric intensity and distribution result, and determine the abnormal state distribution of the silicon wafer group 2 on the carrier 3 by determining; wherein the abnormal state includes the silicon wafer protruding The state of the slanting piece, the lamination, and/or the empty piece; and the control unit may also be connected to the alarm unit, and the control unit may control the opening and closing of the alarm unit according to the abnormal state distribution.

Referring to FIG. 5, FIG. 6 and FIG. 7, FIG. 5 is a schematic structural diagram showing the positional relationship of the photoelectric/ultrasonic sensor group when the silicon wafer is at the falling limit position of the silicon wafer according to the embodiment of the present invention; FIG. 6 is an embodiment of the present invention. The position of the photoelectric/ultrasonic sensor group when the silicon wafer is at the falling limit of the silicon wafer FIG. 7 is a schematic diagram of a calculation principle of a minimum safe distance between a robot hand and a center of a silicon wafer according to an embodiment of the present invention; FIG. 8 is a schematic diagram of a silicon wafer distribution state combination detecting method according to a semiconductor device carrying region of the present invention; Schematic diagram of the process. After the transfer of the wafer is completed and before the wafer is taken, the present invention completes the entire combined detection process by the following three detection sub-stages:

First, the motion initialization parameters of the first and second photosensor groups 4, 5 and the robot 1 are set and initialization is performed, wherein the initialization parameters include the first and second photoelectric/ultrasonic sensor groups 4, 5 horizontal step distance , horizontal starting point position and ending point position; third and fourth photosensor groups 6, 7 (also can be said to set the robot 1) horizontal and / or vertical scanning speed, silicon separation distance, each robot level Step distance, horizontal starting point position and end point position, and up/down vertical starting point position and ending point position (ie, step S1 in FIG. 8).

For the first and second photosensor groups 4, 5, the movement detection area of the horizontal detection scanning direction is determined by the structural parameters of the carrier 3 and the size parameters of the silicon wafer, that is, the horizontal starting position and the wafer are at the drop limit position. The position of the time is related, and the position of the horizontal end point is related to the support structure parameter of the carrier 3. The distance between the two parallel slide rails 9 is related to the diameter of the silicon wafer. For example, for a 300 mm silicon wafer, it is usually possible to select between 50 mm and 250 mm.

For the third and fourth photosensor groups 6, 7 horizontal and / or vertical scanning motion speed, silicon wafer separation distance, each robot horizontal step distance, horizontal starting point position and end point position and upper/lower vertical starting point The position and end point position are determined by the structural parameters of the carrier 3, the size parameters of the robot 1 and the silicon wafer.

Assuming that X is the distance between the transmitting end and the receiving end of the third and fourth photosensor groups 6, 7 on the robot 1, the distance between the two parallel slide rails 9 can also be set to X, or can be set as needed. The following embodiments are all taken as the same example, and other cases are not described herein.

Please refer to FIG. 5. FIG. 5 is a schematic structural diagram showing the positional relationship between the first and second photoelectric/ultrasonic sensor groups 4, 5 when the silicon wafer is in the silicon wafer drop limit position according to the embodiment of the present invention. As shown, the two photosensor groups 4, 5 of the parallel slide rail 9 of the moving shutter (shutter) 8 are brought to the limit pre-scanning starting position, which is the distance Z from the support mechanism of the carrier 3. At the same time, the time-varying value b(t) is set, indicating the real-time distance between the center lines of the two photosensors on the end cap 8 from the center of the support structure, b(0)=Z. In addition, b(t)=Y+δ is the distance from the center of the support structure where the distribution state of the silicon wafer is officially obtained.

Assuming that the center of gravity of the silicon wafer in FIG. 5 is located at the edge of the support structure of the carrier 3 (offset from the normal position Y), the maximum displacement position of the silicon wafer does not slip off the support structure, and the relative tilt angle of the silicon wafer is set to γ, γ is taken. The value size is determined by the structural design and has the following relationship:

Tan(γ)=s/Y, γ=arctan(s/Y), s is the separation distance between two adjacent silicon wafers, that is, two adjacent silicon wafers when the silicon wafer group 2 is horizontally placed on the carrier 3. The distance of the center in the vertical direction; then

δ>0, δ is the safety margin setting value, and X is the distance between the first and second photosensor groups 4, 5 (ie, two parallel rails 9).

Similarly, if the setting X is also the distance between the transmitting end and the receiving end of the third and fourth photosensor groups 6, 7 (as shown in FIG. 6) on the robot 1, the center of gravity of the silicon wafer is located on the carrier 3. When the edge of the support structure (offset from the normal position Y in the direction of the robot 1) is the maximum displacement position of the support structure of the silicon wafer, the scan detection horizontal start position to the center of the carrier 3 should be greater than or equal to the wafer group 2 The distance from the wafer drop limit position to the center of the carrier 3.

Please refer to FIG. 7. FIG. 7 is a schematic diagram showing the calculation principle of the minimum safe distance between the center of the silicon wafer in the embodiment of the present invention. As shown in the figure, the scan detection start position is set to be Z from the center distance of the carrier 3, and the time change value of the horizontal detection scan is set to b(t), and b(t) represents two photoelectrics on the robot 1. The real-time distance between the centerline of the sensor 4 and the center of the support structure, then, in the water The flat scan detects the starting position, b(0)=Z; in addition, in order to consider the safety margin, b(t)=Y+δ is the distance from the center of the structure of the distance carrier 3 that officially acquires the distribution state of the silicon wafer;

X is the distance between the third and fourth photosensor groups 6, 7 on the robot 1;

Y is the radius of the carrier 3, that is, the length from the center point of the carrier 3 to the edge thereof;

r is the radius of the silicon wafer in the silicon wafer group 2, that is, the length from the center of the silicon wafer to the edge thereof;

s is the separation distance between two adjacent silicon wafers, that is, the distance between the centers of two adjacent silicon wafers in the vertical direction when the silicon wafer group 2 is horizontally placed on the carrier 3;

γ is the tilt angle of the wafer set relative to the absolute horizontal position, and it is clear to those skilled in the art that the thickness of the general-purpose silicon wafer is usually 0.7 mm, relative to a silicon wafer having a diameter of 300 mm or 200 mm, that is, a radius of 150 mm or 100 mm. The ratio of the thickness 2 of the silicon wafer 2 is less than 1/100. Therefore, when calculating the tilt angle of the silicon wafer, the thickness d of the silicon wafer can be approximately 0. In this case, the relationship of the tilt angle can be calculated as follows:

Tan(γ)=s/Y,

γ(0)=arctan(s/Y), that is, the value of γ(0) is determined by structural design

Referring to FIG. 6, when the center of gravity of the silicon wafer is located at the edge of the support structure, the projection of the tilted silicon wafer on the absolute horizontal plane is:

If Z is the limit scan start position, that is, the center of the robot 1 is at the center distance from the carrier 3 at that position, that is, at the horizontal scanning detection start position, b(0)=Z, then the safety margin is considered;

Z(0)>√r ² -(X/2) ² cos(γ)+Y+δ

δ>0, which is the safety margin setting value, that is, the safety distance that the robot 1 does not interfere with the silicon wafer in the vertical direction at this time, and the value is also the same as the above X, r and the wafer center and the robot 1 Whether the center of the U-port is affected by the same horizontal line. Therefore, when detecting, it is necessary to locate the center line and the silicon between the third and fourth photosensor groups 6 and 7 on the U-shaped port. On a flat surface. Also, the distance between the connection between the third and fourth photosensor groups 6, 7 on the robot 1 and the center of the silicon wafer 2 in the same plane needs to be greater than:

That is to say, when the limit scan does not detect the silicon wafer abnormality, that is, when the silicon wafer is tilted, the robot 1 moves in the horizontal direction as follows, and the movement in the vertical direction is still not generated with the inclined silicon wafer. put one's oar in;

After the horizontal scanning start point setting is completed, it is also necessary to set the distance for the robot 1 to move toward the center of the carrier 3 every time c(t), where t=0, 1, 2, 3...; the robot 1 is horizontal The horizontal stepping distance of each direction of movement may be the same or different, for example, it may be gradually reduced.

If a(t) is an intermediate length variable, the distance that robot 1 can safely move at a time, a(0)=0; b(t) is the intermediate length variable, that is, the real-time distance between the center of the robot 1 and the center of the silicon wafer. b(0)=Z; h(t) is an intermediate length variable used to calculate the tilt angle of the silicon wafer, h(0)=Y; then,

b(t)=b(t-1)–a(t)

Please refer to FIG. 9. FIG. 9 is a flow chart showing the overall control of the combined detection of the distribution state of the silicon wafer in the carrying region of the semiconductor device according to the embodiment of the present invention. As shown in the figure, after the above initialization parameters are determined, the silicon slice distribution state scan command can be waited for and received, and the actual detection process is started directly after the instruction is obtained. If the initialization step fails, the abnormal location and result are reported, waiting for manual disposal Or dispose of as prescribed.

After the initialization step is completed, the first detection sub-flow can be executed; that is, the working modes of the first and second photoelectric/ultrasonic sensor groups 4, 5 are set to the self-receiving mode, and the abnormal position limit position pre-scan of the silicon wafer is performed. Instruction (step S2 in Fig. 5).

Specifically, as shown in FIG. 9, in the first detection sub-phase (ie, performing an abnormal state limit position pre-scanning instruction of the silicon wafer tab), the first photosensor group 4 and the second photosensor employed in the embodiment of the present invention Group 5, respectively located on the parallel slide rails 9 on the inner surface of the carrier end cover 8 above the wafer set 2; in the following embodiments, the first and second photoelectric/ultrasonic sensor groups 4, 5 are moved to the limit pre-scan The starting position (usually the horizontally placed silicon wafer can be set to the upper or lower end as the starting position, and the vertical placement of the silicon wafer can be selected as the starting position), which is described only in the case where the silicon wafer is placed vertically, and the other embodiments have the same principle. I will not repeat them here.

The principle of the ranging mode of the first detection sub-phase is that the transmitting ends of the first and second photoelectric/ultrasonic sensor groups 4, 5 operating in the self-receiving mode are emitted perpendicularly to the silicon group 2, which passes the self-emission The time difference from the reception can measure the distance of the obstacle from the photosensor group on the blocked beam propagation path. The following embodiment is exemplified only by the first and second photosensor groups 4, 5, and the principles are the same if the first and second ultrasonic sensor groups 4, 5 are employed in other embodiments.

Please refer to FIG. 10. FIG. 10 is a schematic diagram of a pre-scanning instruction flow of a tab abnormal state according to an embodiment of the present invention; as shown in the figure, step S2, performing an abnormal state limit position pre-scanning instruction of the silicon wafer tab (ie, working at the first Detection sub-phase); specifically, step S2 includes the following steps:

Step S21: the first and second photosensor groups 4, 5 are positioned corresponding to the vertical starting point and the horizontal starting point position of the first placement of the silicon wafer of the carrier 3, and the first and second photoelectric/ultrasonic sensor groups 4, The working mode of 5 is set to the self-receiving mode;

Step S22: determining whether the silicon wafer has an abnormal state protruding from a predetermined position according to a time difference between the first and/or second photosensor groups 4, 5 respectively transmitting and receiving optical signals in a vertical direction of the silicon wafer stacking and a predetermined determination rule. If yes, go to step S24; otherwise, go to step S23;

Step S23: Control the first and second photosensor groups 4, 5 to advance a predetermined horizontal step distance along the center of the carrying area, and determine whether the position is a horizontal end point position; if yes, execute step S4; otherwise, execute Step S22;

Step S24: measuring the obstacle distance on the blocked beam propagation path, obtaining the position parameter of the protruding state silicon wafer, and issuing the tab abnormality alarm information, and performing step S3.

That is, in the detection sub-phase, the operation mode is the emission direction of the first and second photosensor groups 45 from the reception mode to an angle perpendicular to the surface of the silicon wafer, according to the first and second photosensor groups 4, 5 The position of the obstacle on the transmitting/receiving path of the limit beam can be measured to obtain the limit position detection result of all the positions where the silicon wafer is placed. The judgment criteria of the detection result can be divided into the following three types:

A. no obstacles, that is, the first and second photoelectric/ultrasonic sensor groups 4, 5 have no obstacles detected in the silicon wafer placement area where the limit position is perpendicular to the silicon wafer direction;

B. Obstacle, that is, the first and second photoelectric/ultrasonic sensor groups 4, 5 detect obstacles in the silicon wafer placement area where the limit position is perpendicular to the silicon wafer, and the obstacle can be determined according to the measurement distance of the photoelectric sensor group. Object location

C. Uncertain state, need to be detected again or manually repeated detection, that is, the first and second photosensor groups 4, 5 have a group of photosensor groups detecting obstacles in the wafer placement area where the limit position is perpendicular to the wafer direction.

Specifically, in some embodiments of the present invention, if the silicon wafer limit protruding state is not detected at the above-described positioning detecting node (d(0)=Y, b(0)=Z), the following displacement detecting operation can be performed, As shown 11 shows:

a) setting speed Smove and scanning detection node spacing a, the first and second photoelectric/ultrasonic sensor groups 4, 5 are synchronously moved toward the center of the support structure according to the set speed;

b) if b(t)–a>Y+δ, the robot moves to the position b(t)=b(t)–a, at which the first and second photoelectric/ultrasonic sensor groups 4 are 5 The state of the obstacle is detected in the wafer placement area for the treatment of the motion state:

1. Barrier-free: Move to the next detection node according to the set speed.

2. Obstacle: stop the movement, feedback the obstacle position according to the measurement distance of the first and second photoelectric/ultrasonic sensor groups 4, 5, alarm and remind the user to select the operation;

3, uncertain state, need to detect again or manually repeat the test, alarm and remind the user to choose the operation;

c) If b(t)–a<=Y+δ, the robot moves to the b(t)=Y+δ position at which the first and second opto-electronic/ultrasonic sensor groups 4,5 are The wafer placement area detects the state of the obstacle for the treatment of the motion state:

1. Obstacle-free: end step S2, skip to step S4;

2. Obstacle: stop the movement, feedback the position of the obstacle according to the measurement distance of the photoelectric sensor group 1 and the photoelectric sensor group 2, alarm and remind the user to select the operation;

3, uncertain state, need to detect again or manually repeat the test, alarm and remind the user to choose the operation.

It should be noted that the step S2 includes the limit pre-scanning instruction in FIG. 10, which can quickly detect the position of the most prominent silicon wafer in the silicon wafer group 2. The other protruding degree is smaller than the abnormal state of the silicon wafer. If it is determined, it needs to perform step S3 to obtain.

It can be seen from the above steps that if the measurement result at the horizontal starting point does not find that there is a barrier obstacle on the beam propagation path, then the first and second photoelectric/ultrasonic sensor groups 4 are controlled by a driving unit (not shown), 5 synchronously moving horizontally along the parallel slide rails 9, that is, controlling the first and second photoelectric/ultrasonic sensor groups 4, 5 to advance by a predetermined horizontal step distance along the center of the load-bearing area, and detecting again until a blocking obstacle is detected. If the second detection sub-phase is executed, or if the obstacle has not been blocked at the horizontal end point, the second detection sub-phase is skipped (step S3), and the third detection sub-phase is directly executed (step S4).

It will be apparent to those skilled in the art that since the one-sided scanning of the one-sided silicon wafer protruding abnormality cannot fully diagnose the distribution state of the silicon wafer in the bearing area abnormality, in some embodiments of the present invention, it can be passed through the carrier. An end rail 8 of 3 is provided with an annular rail 10 coaxial with the silicon wafer; a first rotating unit (not shown) can drive the two parallel rails 9 to rotate along the annular rail 10, and the entire bearing A plurality of rotation detecting stop positions are arranged on the side circumference of the device 3, and the operation of step S2 is performed once at each detection position to obtain a corresponding set of detection results; finally, the plurality of sets of detection results are compared and operated, and finally the silicon can be realized. The chip detects the abnormal distribution state of the silicon tabs of the multi-angle.

According to the structural characteristics of the annular slide rail 10 and the two parallel slide rails 9, the selection of the plurality of position points may adopt the principle of uniform distribution or the principle of uneven distribution. For example, for the case where the rotation angles of two adjacent ones of the plurality of position points are the same, the following settings can be selected:

A. When the remainder of (360 ° / set rotation angle) = 0:

Cumulative detection position number = 360 ° / set rotation angle

Actual rotation angle = set rotation angle

B. When the remainder of (360°/set rotation angle) ≠0:

The total number of detected positions = (360 ° / set rotation angle) rounded (after rounding off the decimal point) +1

Actual rotation angle = 360° / number of cumulative detection positions

Of course, if the detected position coordinate value generated by the rotation start point and the set rotation angle conflicts with the coordinate position of the support point of the carrier 3, the start point and the rotation angle value need to be reset. For example, in some special cases, in order to avoid the support column of the carrier 3, the point detection can be reset at a position of 10 or 20 degrees from the left and right of the support column.

After the above-mentioned detection position on the circumference generated by the collision-free starting point and the set rotation angle is completed, it is possible to acquire the state of the distribution of the silicon wafer in the entire bearing area, and each detection position acquires a set of distribution state values, and then The summation results of the state results of the distribution positions of all detected positions have two results:

A. Normal, the operation after placing the silicon wafer or the film taking operation after scanning can be performed.

B. Anomaly, the abnormal position and result are reported for the user to dispose, and the user operation option is provided according to the abnormal result.

Next, in the second detection sub-phase (as in step S3), the operational modes of the third and fourth photosensor groups 6, 7 are set to the mutual reception mode, and the abnormal state cyclic scan instruction of the silicon wafer is performed. That is, the feedback value receiving time of the third and fourth photoelectric sensor groups 6, 7 will change with the range of the occlusion; during the operation, if there is an obstacle, the photoelectric sensor intensity changes as shown in Fig. 7. Show. That is, in the ranging scanning process working in the second and third detecting sub-stages, the third photoelectric sensor group 6 may be used for transmission, and the fourth photoelectric sensor group 7 may be received by the fourth photoelectric sensor group 7. The manner in which the third photosensor group 6 is received.

The third and fourth photosensor groups 6, 7 are disposed at the U-shaped end of the manipulator 1 on the circumferential side of the carrier 3 (bearing area), and may be horizontally and/or vertically with the robot 1. The positioning is moved in a preset direction and scanning detection is realized; that is, the movement of the third and fourth photosensor groups 6, 7 is achieved by the movement of the robot 1. In addition, as described above, if the distance between the third and fourth photosensor groups 6, 7 is X, then the value of X needs to ensure that the robot 1 can normally scan the specified size wafer during the motion without The silicon wafer interferes.

Referring to FIG. 13 and FIG. 14 , FIG. 12 is a schematic diagram showing the principle of a detection process of a prominent abnormal distribution state according to an embodiment of the present invention; FIG. 13 is a schematic flowchart of a loop scan instruction instruction of a tab abnormal state according to an embodiment of the present invention; The schematic diagram of the movement trajectory of the third and fourth photosensor groups in the process of detecting the abnormal distribution state of the silicon wafer in the embodiment of the present invention.

As shown in FIG. 12, in the second detection sub-stage, in order to obtain scan data of the silicon wafer at a certain position on the load-bearing structure, the judgment of the obstacle-free object is determined by the change of the photoelectric sensor intensity, that is, silicon The slice scan center value is a reference. If the light intensity return value of the photosensor receiving end is less than the specified threshold α, it is considered that there is object occlusion in the corresponding area, and the return state value is 1, indicating that the wafer at the corresponding position of the carrier 3 is at If the light intensity return value of the receiving end of the photoelectric sensor is greater than or equal to the specified threshold α, it is considered that there is no object in the corresponding area, and the return status value is 0, indicating that the silicon wafer at the corresponding position of the carrier 3 is in a normal state.

As shown in FIG. 12, the detection time points t1, t2, t3, and t4 appearing on the abscissa are related to the motion scanning speed of the robot 1, and therefore, the state of the silicon wafer can be determined according to the starting point and range of the time detection result change. At the same time, it can calculate the degree of protrusion beyond the normal range, and obtain the diagnosis result of whether the position of each wafer can be safely processed or unloaded.

As shown in FIG. 13, the abnormal state cyclic scan instruction (step S3) of executing the silicon tab may include the following steps.

Step S31: the robot 1 is positioned down to the position where the wafer is in a protruding state; The working mode of the fourth photoelectric sensor group 6, 7 is set to the mutual receiving mode, and it is determined whether the position is the upper or lower vertical end point position; if so, the control robot 1 advances along the center of the carrying area by a preset horizontal step distance Step S33 is performed; if not, step S32 is performed;

Step S32: The robot 1 sequentially descends or rises a separation distance of a silicon wafer;

Step S33: determining, according to the change in the intensity of the feedback value of the feedback value of the horizontally transmitting and receiving optical signals between the third and fourth photosensor groups 6, 7 , determining whether the wafer in the corresponding position has an abnormal state of the tab If yes, go to step S35; otherwise, determine whether the position is the up/down vertical end point position; if not, go to step S32; if yes, go to step S34;

Step S34; the robot 1 advances in the center direction of the carrying area by a preset horizontal step distance (as shown in FIG. 14), and determines whether the position is beyond the horizontal end point position; if yes, step S4 is performed; otherwise, step S33 is performed. ;

Step S35: issuing the tab abnormality alarm information, and proceeding to step S32.

The abnormal state cyclic scan instruction sums the scan results of all positions to obtain the limit scan results of all the silicon placement positions, and the result is as follows:

A. Normal, the formal scanning action is performed. If no abnormality enters the next step, the other round scanning motion performed next is to perform a cyclic scan for detecting whether the silicon wafer is in the corresponding protruding degree;

B. Abnormal, report abnormal location and result, wait for manual disposal or dispose of according to regulations.

After obtaining the scan results of all the placement positions of the silicon wafers, if an abnormal position is found, an alarm prompt for the abnormality of the specified position is given, waiting for manual disposal or disposing according to regulations.

Unilateral scanning of a single-sided wafer that protrudes abnormally does not completely diagnose the wafer in the load-bearing area. The abnormal distribution state condition is highlighted, and therefore, in some embodiments of the present invention, a rotating unit can be provided on the carrier 3 or the robot 1, which makes the relative rotation of the manipulator 1 around the carrier 3, And a plurality of rotation detecting stop positions are arranged around the sides of the entire carrier 3, and the operation of step S3 is performed once at each detecting position to obtain a corresponding set of detection results; finally, the plurality of sets of detection results are compared and calculated to obtain a final It is possible to detect the abnormal distribution state of the silicon wafer tabs of the silicon wafer at multiple angles.

According to the support structure characteristics of the carrier 3, the selection of the plurality of position points may adopt the principle of uniform distribution or the principle of uneven distribution. For example, for the case where the rotation angles of two adjacent ones of the plurality of position points are the same, the following settings can be selected:

A. When the remainder of (360 ° / set rotation angle) = 0:

Cumulative detection position number = 360 ° / set rotation angle

Actual rotation angle = set rotation angle

B. When the remainder of (360°/set rotation angle) ≠0:

The total number of detected positions = (360 ° / set rotation angle) rounded (after rounding off the decimal point) +1

Actual rotation angle = 360° / number of cumulative detection positions

Of course, if the detected position coordinate value generated by the rotation start point and the set rotation angle conflicts with the coordinate position of the support point of the carrier 3, the start point and the rotation angle value need to be reset. For example, in some special cases, in order to avoid the support column of the carrier 3, the point detection can be reset at a position of 10 or 20 degrees from the left and right of the support column.

After the above-mentioned detection position on the circumference generated by the collision-free starting point and the set rotation angle is completed, it is possible to acquire the state of the distribution of the silicon wafer in the entire bearing area, and each detection position acquires a set of distribution state values, and then The summation result of the state results of the distribution positions of all detected positions, There are two results:

A. Normal, the operation after placing the silicon wafer or the film taking operation after scanning can be performed.

B. Anomaly, the abnormal position and result are reported for the user to dispose, and the user operation option is provided according to the abnormal result.

Next, please refer to FIG. 15, 16, and 17 in conjunction with FIG. 8. FIG. 15 is a flowchart of a method for performing an abnormal scan of a silicon wafer distribution state according to the method of the present invention. As shown in the figure, the final step S4 of the embodiment of the present invention is to set the operation modes of the third and fourth photosensor groups 6, 7 to the mutual reception mode, and execute the silicon distribution state abnormal scan instruction (step S4), that is, According to the distribution state of the optical signal intensity in the scanning detection area, the feedback values of the mutual transmission and reception between the third and fourth photosensor groups 6, 7 are judged whether or not there is an abnormal state of the oblique piece, the lamination, and/or the empty piece.

Referring to FIG. 15, step S4 may specifically include the following steps:

Step S41: obtaining a motion scanning area for judging the oblique piece, the lamination piece and the empty piece according to the thickness of the silicon wafer, the separation distance of the adjacent silicon wafers, and the thickness of the carrier;

Step S42: the robot is positioned at a horizontal starting point position and an upper/lower vertical ending point position;

Step S43: sequentially determining whether the corresponding silicon wafer placement position has a slanting piece according to the preset detection area of the third and fourth photosensor groups 6, 7 for mutually transmitting and receiving the optical signal and the shielding width of the optical signal in the area. The abnormal state of the lamination, and/or the empty slice; if yes, step S45 is performed; otherwise, step S44 is directly performed;

Step S44: the robot sequentially descends or rises the spacing distance of a silicon wafer to determine whether the position is an up/down vertical end point position; if so, ends; otherwise, step S43 is performed;

Step S45: issuing abnormal state information of the oblique piece, the lamination, and/or the empty piece at the corresponding position, Step S44 is performed.

Referring to FIG. 16, FIG. 16 is a schematic diagram showing a specific control flow of a preferred embodiment for determining whether there is an abnormal state of a slanting piece, a lamination, and/or an empty piece in the embodiment of the present invention. In this embodiment, the abnormal state detection of the oblique pieces, the laminations, and/or the empty sheets is sequentially performed.

Specifically, please refer to FIG. 17, which is a schematic diagram of positional relationship parameters between a silicon wafer and a carrier according to an embodiment of the present invention. If the silicon wafer thickness value d is set, the teaching reference position is d/2, the interval between adjacent silicon wafers is s, and the interval thickness of the carrier 3 is t, and the return value of the receiving end of the photosensor 4 is different according to different scanning regions. In the case of the state 1/0, the distribution state of the silicon wafer is as shown in Table 1 below.

Table 1

As can be seen from the above Table 1, it can be judged whether or not a slanting piece, a lamination or a chipless phenomenon occurs in the corresponding area according to the preset detection area and the optical signal shielding width in the area, that is, the detected return value. For the case of the oblique slice, in the range of the motion scanning area [2*(d+d*1/3), Sd*1/3], if the width of the shadowed area in the detection result >=d, then it can be concluded. On the corresponding position Now the phenomenon of the slanting film, if the width of the occlusion area in the detection result is <0.1d, then it can be concluded that there is no slanting phenomenon at the corresponding position. If the width of the occlusion area in the detection result is not in the above two cases, then The control unit may send a reminder message to the alarm unit or issue information for performing the detection again until all the wafer placement position scan results are obtained, and if there is an abnormal position, an alarm prompt for the specified position abnormality is given, waiting for manual disposal or disposition according to regulations.

In addition, since the one-side scanning of the wafer slanting sheet, the lamination, and/or the empty sheet abnormality cannot completely diagnose the distribution state of the silicon wafer in the bearing area abnormality, the same as steps S2 and S3, in the present invention In some embodiments, a second rotating unit (not shown) may be disposed on the carrier 3 or the robot 1, the second rotating unit causing the robot 1 to perform a relative rotational motion about the carrier 3, and the rotating motion may be implemented on the carrier. A plurality of detection positions are arranged around the side of the 3, and the operation of step S4 is performed once at each detection position to obtain a corresponding set of detection results; finally, the plurality of detection results are compared and operated to obtain the final wafer slanting and stacking. The abnormal state distribution of the sheets and/or the blanks allows for a more detailed detection of the distribution of the wafer on the circumference.

According to the support structure of the carrier 3, a plurality of position points may be evenly distributed or may be unevenly distributed. For the case where the rotation angles of two adjacent ones of the plurality of position points are the same, the selection is as follows:

A. When the remainder of (360 ° / set rotation angle) = 0:

Cumulative detection position number = 360 ° / set rotation angle

Actual rotation angle = set rotation angle

B. When the remainder of (360°/set rotation angle) ≠0:

The total number of detected positions = (360 ° / set rotation angle) rounded (after rounding off the decimal point) +1

Actual rotation angle = 360° / number of cumulative detection positions

Of course, if the detected position coordinate value generated by the rotation start point and the set rotation angle conflicts with the coordinate position of the support point of the carrier 3, the start point and the rotation angle value need to be reset. For example, to avoid the support column of the carrier 3, point detection can be performed at a position 10 or 20 degrees from the left and right of the support column.

After the above-mentioned detection position on the circumference generated by the collision-free starting point and the set rotation angle is completed, the presence or absence of the slanting piece, the lamination and/or the empty piece in the entire bearing area is obtained, and each detection position acquires one. The group distributes the state values and then sums the state results of the distribution locations of all detected locations. There are two results:

A. Normal, the operation after placing the silicon wafer or the film taking operation after scanning can be performed.

B. Anomaly, the abnormal position and result are reported for the user to dispose, and the user operation option is provided according to the abnormal result.

In addition, referring to FIG. 9, after finally obtaining the detection scan result of the oblique piece, the lamination and/or the empty piece, the process judging step can be performed, and the specific process steps of the step are presented in FIG. This will not be repeated here.

Although the invention has been disclosed above in the preferred embodiments, the above embodiments are not intended to limit the invention. For those skilled in the art, many possible variations and modifications may be made to the technical solutions of the present invention, or modified to equivalent changes, etc., without departing from the scope of the present invention. Effective embodiment.

Claims (10)

1. A silicon wafer distribution state combined detecting method for a semiconductor device carrying area, characterized in that: two inner sliding surfaces of the end surface of the end cap of the end of the silicon wafer set are provided with two parallel sliding rails symmetrically with respect to the center of the end cap The relative positions of the tracks are provided with first and second photosensor groups/ultrasonic sensor groups, each set of the photoelectric/ultrasonic sensor group comprising two photoelectric/ultrasonic sensors operating in a self-receiving mode; The third and fourth photoelectric/ultrasonic sensor groups are disposed at opposite positions of the U-shaped end of the manipulator on the circumferential side of the carrier, and each of the photoelectric/ultrasonic sensor groups includes two photoelectric/ultrasonic waves operating in the mutual receiving mode. a sensor; the method comprising the steps of:

   Step S1, setting motion initialization parameters of the first and second photosensor groups/ultrasonic sensor groups and the robot, and performing initialization, wherein the initialization parameters include the horizontal step distance, the horizontal starting point position, and the termination of the photoelectric sensor group Point position; robot horizontal and / or vertical scanning motion speed, silicon wafer separation distance, each robot horizontal step distance, horizontal starting point position and end point position and upper/lower vertical starting point position and end point position;

   Step S2: executing an abnormal state limit position pre-scanning instruction of the silicon wafer tab; specifically:

   Step S21: the first and second photosensor groups/ultrasonic sensor groups are positioned corresponding to a vertical starting point and a horizontal starting point position of the first placement silicon wafer of the carrier, and the first and second photoelectric groups are The operating mode of the sensor group/ultrasonic sensor group is set to the self-receiving mode;

   Step S22: determining whether the silicon wafer has an abnormal state protruding from the predetermined position according to a time difference between the first and second photosensor groups/ultrasonic sensor groups respectively transmitting and receiving the optical signals in the vertical direction of the silicon wafer stacking and a predetermined determination rule. Yes, step S24 is performed; otherwise, step S23 is performed;

   Step S23: controlling the first and second photosensor groups/ultrasonic sensor groups to advance synchronously along a central direction of the carrying area by a predetermined horizontal step distance, and determining whether the position is a horizontal end point position; if yes, performing steps S4; otherwise, step S22 is performed;

   Step S24: measuring the obstacle distance on the blocked beam propagation path, and obtaining the protruding state The positional parameter of the silicon wafer, issuing a tab abnormality alarm message, performing step S3;

   Step S3: executing an abnormal state cyclic scan instruction of the silicon wafer tab; specifically:

   Step S31: the robot positioning is lowered to the position where the protruding state silicon wafer exists; the working modes of the third and fourth photoelectric/ultrasonic sensor groups are set to the mutual receiving mode, and it is determined whether the position is up or down a vertical end point position; if yes, controlling the robot to advance a predetermined horizontal step distance along the center of the carrying area, step S33; if not, executing step S32;

   Step S32: The robot manually descends or raises a separation distance of a silicon wafer;

   Step S33: determining, according to the change in the intensity of the occlusion range, the receiving time of the horizontally-transmitted and received optical signals between the third and fourth photoelectric/ultrasonic sensor groups, and determining whether the silicon wafer at the corresponding position has an abnormal state of the tab; If yes, go to step S35; otherwise, determine whether the location is the up/down vertical end point position; if not, go to step S32; if yes, go to step S34;

   Step S34; the robot advances a predetermined horizontal step distance along the center of the carrying area to determine whether the position is beyond the horizontal end point position; if yes, step S4 is performed; otherwise, step S33 is performed;

   Step S35: issuing the tab abnormality alarm information, and continuing to step S32;

   Step S4: executing a silicon wafer distribution state abnormal scan instruction, and determining whether there is a diagonal slice or a stack according to a distribution state of the optical signal intensity in the scan detection area according to feedback values of mutual feedback and reception between the third and fourth photoelectric/ultrasonic sensor groups The abnormal state of the slice and / or empty slice.
2. The detecting method according to claim 1, wherein the predetermined determining rule in the step S22 is:

   A. If the first and second photosensor groups/ultrasonic sensor groups have no obstacles detected in the silicon wafer placement area in which the limit position is perpendicular to the wafer direction, there is no abnormal state at which the predetermined position is protruded at the corresponding position;

   B. If the first and second photosensor groups/ultrasonic sensor groups detect obstacles in the silicon wafer placement area where the limit position is perpendicular to the silicon wafer direction, the corresponding position has a difference in the specified position. Constant state

   C. If the first and second photosensor group/ultrasonic sensor group have a group of photosensor groups/ultrasonic sensor groups detecting obstacles in the wafer placement area where the limit position is perpendicular to the wafer direction, it is determined to be in an indeterminate state, and Retest or manually repeat the test.
3. The detecting method according to claim 1, further comprising a first rotating unit, wherein the inner surface of the end cap of the carrier further has an annular sliding rail concentric with the center of the carrier, the first rotation The unit drives the two parallel slide rails to rotate along the annular slide rail, and has N rotation detection stop positions on the entire circumference of the carrier side, and the step S2 is performed once at each detection position to obtain a corresponding set of The detection result is obtained; finally, the N sets of detection results are ANDed to obtain an abnormal state distribution of the final silicon wafer tab, wherein N is a positive integer greater than or equal to 2.
4. The detecting method according to claim 3, wherein the rotation angles of the two adjacent ones of the N positions are the same, and the selection is set as follows:

   A. When the remainder of (360 ° / set rotation angle) = 0:

   Cumulative detection position number = 360 ° / set rotation angle

   Actual rotation angle = set rotation angle

   B. When the remainder of (360°/set rotation angle) ≠0:

   The total number of detected positions = (360 ° / set rotation angle) rounded (after rounding off the decimal point) +1

   Actual rotation angle = 360° / number of cumulative detection positions

   If the detected position coordinate value generated by the rotation start point and the set rotation angle conflicts with the coordinate position of the carrier support point, the start point and the rotation angle value need to be reset.
5. The detecting method according to claim 1, wherein in the step S2, the horizontal starting positions of the first and second photosensor groups/ultrasonic sensor groups and the manipulator and the silicon wafer are in a drop limit position Positionally related, the horizontal end point position is related to the support structure parameter of the carrier; and the horizontal step distance is equal or gradually decreased with each movement in the horizontal direction.
6. The detecting method according to any one of claims 1, 2, 3, 4 or 5, wherein the step S4 comprises:

   Step S41: obtaining a judgment oblique plate and a stack according to the thickness of the silicon wafer and the separation distance of the adjacent silicon wafers Motion scanning area of slices and blanks;

   Step S42: the robot is positioned at a horizontal starting point position and an upper/lower vertical ending point position;

   Step S43: sequentially determining whether the corresponding silicon wafer placement position is oblique according to a preset detection area for transmitting and receiving optical signals between the third and fourth photoelectric/ultrasonic sensor groups and an optical signal shielding width of the region. The abnormal state of the slice, the lamination and/or the empty slice; if yes, step S45 is performed; otherwise, step S44 is directly executed;

   Step S44: the robot sequentially descends or rises the spacing distance of a silicon wafer to determine whether the position is an up/down vertical end point position; if so, ends; otherwise, step S43 is performed;

   Step S45: The abnormal state information of the oblique piece, the lamination and/or the empty piece is issued at the corresponding position, and step S44 is performed.
7. The detecting method according to claim 6, wherein the carrier or the robot comprises a second rotating unit, the second rotating unit causes the robot to rotate relative to the carrier, and The entire circumference of the carrier has M rotation detection stop positions, and the step S3 and/or the step S4 are performed once at each detection position to obtain a corresponding set of detection results; finally, the M group detection results are compared and operated. The result of the abnormal distribution state of the silicon wafer is obtained; wherein M is a positive integer of 2 or more.
8. The detecting method according to claim 7, wherein the rotation angles of the two adjacent ones of the M position points are the same, and the selection is set as follows:

   A. When the remainder of (360 ° / set rotation angle) = 0:

   Cumulative detection position number = 360 ° / set rotation angle

   Actual rotation angle = set rotation angle

   B. When the remainder of (360°/set rotation angle) ≠0:

   The total number of detected positions = (360 ° / set rotation angle) rounded (after rounding off the decimal point) +1

   Actual rotation angle = 360° / number of cumulative detection positions

   If the detected position coordinate value generated by the rotation start point and the set rotation angle conflicts with the coordinate position of the carrier support point, the start point and the rotation angle value need to be reset.
9. A silicon wafer distribution using the semiconductor device carrying region according to any one of claims 1 to 8. The device for detecting a state photoelectricity method, comprising:

   The first and second photoelectric/ultrasonic sensor groups are respectively disposed at opposite positions of two parallel slide rails symmetrical with the center of the end cover, and are controlled by the driving unit to perform synchronous horizontal movement along the parallel slide rails; The photoelectric sensor includes a transmitting end and a receiving end; the first and second photosensor groups/ultrasonic sensor groups operate in a self-receiving mode;

   The third and fourth photoelectric/ultrasonic sensor groups are respectively disposed at opposite positions of the U-shaped end of the manipulator on the circumferential side of the carrier, and are moved in a horizontal and/or vertical preset direction as the robot moves And performing scan detection; each set of the photoelectric sensor comprises a transmitting end and a receiving end; and the third and fourth photoelectric sensor groups are operated in an inter-receiving mode;

   a control unit, configured to set an operation mode of the first, second, third, and fourth photosensor groups, or an operation mode of the first and second ultrasonic sensors and the third and fourth ultrasonic sensor groups, to initiate detection and Processing the obtained feedback signal strength and distribution result to obtain an abnormal state distribution of the silicon wafer on the carrier; wherein the abnormal state includes a silicon wafer protrusion, a diagonal piece, a lamination, and/or an empty piece State;

   An alarm unit is connected to the control unit, and the control unit controls opening and closing of the alarm unit according to an abnormal state distribution.
10. The detecting device according to claim 9, further comprising a first rotating unit and a second rotating unit, wherein the first rotating unit is configured to drive the two parallel sliding rails to rotate along the circular sliding rail, and the second rotating unit And is used for driving the robot to perform relative rotational movement about the carrier.

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