CN112894609A - Chemical mechanical polishing system and chemical mechanical polishing monitoring method - Google Patents
Chemical mechanical polishing system and chemical mechanical polishing monitoring method Download PDFInfo
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- CN112894609A CN112894609A CN202110173013.9A CN202110173013A CN112894609A CN 112894609 A CN112894609 A CN 112894609A CN 202110173013 A CN202110173013 A CN 202110173013A CN 112894609 A CN112894609 A CN 112894609A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a silicon wafer chemical mechanical polishing system, which comprises: the polishing head is used for fixing the pure silicon wafer; the pressurizing mechanism provides pressure for the polishing head to press on the upper surface of the pure silicon wafer; the distance sensor is used for detecting a distance signal containing the real-time thickness of the pure silicon wafer and transmitting the detected distance signal containing the real-time thickness of the pure silicon wafer to a control unit for calculation so as to obtain the real-time thickness of the pure silicon wafer; and the control unit is used for adjusting the pressure of the pressurizing mechanism according to the target thickness of the pure silicon wafer and the real-time thickness data of the pure silicon wafer. In the final polishing process, the pressure of the pressurizing mechanism is automatically adjusted by adopting a distance sensor to measure the thickness result of the pure silicon wafer in real time, so that the flatness control of the pure silicon wafer is better.
Description
Technical Field
The invention relates to the technical field of semiconductor device manufacturing, in particular to a chemical mechanical polishing system and a chemical mechanical polishing monitoring method.
Background
Chemical Mechanical Polishing (CMP), also called Chemical Mechanical Polishing or Chemical Mechanical planarization, is a key and essential technology in silicon wafer manufacturing, and polishes the surface of a silicon wafer through Chemical reaction and Mechanical Polishing to reach a required flatness and remove surface defects or damaged layers.
The surface polishing of silicon wafers is usually completed by two polishing steps of Double Side Polishing (DSP) and front side Final Polishing (FP). Double-side polishing is used for grinding the front and back sides of a wafer, a desired wafer shape can be realized through the control of a polishing table, and final polishing is only carried out on the front side of a silicon wafer.
In the final polishing process of a 12-inch silicon wafer, high requirements are placed on the surface flatness and uniformity of the pure silicon wafer, however, the current final polishing machine does not have the function of monitoring the surface flatness of the pure silicon wafer (bare chip) in real time in the final polishing process.
Disclosure of Invention
The invention aims to provide a chemical mechanical polishing system and a monitoring method, which aim to solve the problem of monitoring the surface flatness of a pure silicon wafer in real time in the final polishing process.
To solve the above technical problem, the present invention provides a chemical mechanical polishing system, comprising:
the polishing head is used for fixing the pure silicon wafer;
the pressurizing mechanism provides pressure for the polishing head to press on the upper surface of the pure silicon wafer;
the distance sensor is used for detecting a distance signal containing the real-time thickness of the pure silicon wafer and transmitting the detected distance signal containing the real-time thickness of the pure silicon wafer to a control unit for calculation so as to obtain the real-time thickness of the pure silicon wafer; and the number of the first and second groups,
the control unit is used for adjusting the pressure of the pressurizing mechanism according to the target thickness of the pure silicon wafer and the real-time thickness data of the pure silicon wafer;
the pressurization mechanism is located above the polishing head and fixedly connected with the polishing head, and the control unit is electrically connected with the pressurization mechanism and the distance sensor respectively.
Optionally, the distance sensor includes a first distance sensor and a second distance sensor, the distance signal including the real-time thickness of the pure silicon wafer detected by the first distance sensor and the second distance sensor is transmitted to the control unit, and the control unit calculates the real-time thickness of the pure silicon wafer through the distance difference between the first distance sensor and the second distance sensor.
Optionally, the number of the first distance sensors is multiple.
Optionally, an internal back plate is further disposed below the polishing head, and a first rotating mechanism is further disposed above the polishing head, and the first rotating mechanism is connected with the polishing head and the internal back plate and drives the polishing head and the internal back plate to rotate.
Optionally, the first distance sensor is fixed on the internal back plate.
Optionally, the silicon wafer chemical mechanical polishing system further comprises a polishing table, and a groove is formed in the polishing table.
Optionally, the second distance sensor is fixed in a groove of the polishing table, and a surface of the second distance sensor is flush with a surface of the polishing table.
Based on the same inventive concept, the invention also provides a chemical mechanical polishing monitoring method, which comprises the following steps:
pressing a pure silicon wafer onto a polishing pad by using a polishing head to polish the pure silicon wafer; and the number of the first and second groups,
the distance sensor detects a distance signal containing the real-time thickness of the pure silicon wafer, the detected distance signal containing the real-time thickness of the pure silicon wafer is transmitted to the control unit to be calculated, the real-time thickness of the pure silicon wafer is obtained, and the control unit adjusts the pressure provided by the pressurizing mechanism to the polishing head in real time according to the target thickness of the pure silicon wafer and the real-time thickness data of the pure silicon wafer.
Optionally, the distance sensor includes a first distance sensor and a second distance sensor, the distance signal including the real-time thickness of the pure silicon wafer detected by the first distance sensor and the second distance sensor is transmitted to the control unit, and the control unit detects the real-time thickness of the pure silicon wafer through a distance difference between the first distance sensor and the second distance sensor.
Optionally, the thicknesses of the rubber ring, the adsorption pad and the polishing pad are subtracted from the distance difference between the first distance sensor and the second distance sensor to obtain the real-time thickness of the pure silicon wafer to be tested.
Compared with the prior art, the invention has the following beneficial effects:
according to the chemical mechanical polishing system and the monitoring method provided by the invention, a distance signal containing the real-time thickness of the pure silicon wafer is detected through a distance sensor, the detected distance signal containing the real-time thickness of the pure silicon wafer is transmitted to a control unit for calculation, so that the real-time thickness of the pure silicon wafer in the final polishing process is obtained, and the real-time thickness data of the pure silicon wafer is fed back to the control unit; the control unit adjusts the pressure of the pressurizing mechanism according to the target thickness of the pure silicon wafer and the real-time thickness of the pure silicon wafer, so that the pure silicon wafer obtains a target polishing appearance, and the pressure of the pressurizing mechanism is automatically adjusted through a real-time measurement result of the thickness of the pure silicon wafer, so that better flatness control of the pure silicon wafer is achieved.
Drawings
FIG. 1 is a schematic diagram of a chemical mechanical polishing system in accordance with an embodiment of the present invention;
FIG. 2 is a schematic top view of a polishing table of an embodiment of the invention;
FIG. 3 is a schematic bottom view of a first distance sensor on the polishing head of an embodiment of the invention;
FIG. 4 is a schematic bottom view of a plurality of first distance sensors on a polishing head in accordance with an embodiment of the invention;
FIG. 5 is a schematic cross-sectional view of a polishing head according to an embodiment of the present invention;
FIG. 6 is an exploded schematic cross-sectional view of a polishing head according to an embodiment of the present invention;
FIG. 7 is a schematic flow chart of a CMP monitoring method according to an embodiment of the present invention;
in the figure, the position of the upper end of the main shaft,
10-a polishing head; 11-a pressurizing mechanism; 12-a first distance sensor; 13-pure silicon chip adsorption pad; 14-pure silicon wafer; 15-a first rotation mechanism; 16-an internal backplane; 17-a snap ring; 18-a rubber ring; 20-a polishing table; 21-a second distance sensor; 22-a polishing pad; 23-a second rotation mechanism; 30-a control unit.
Detailed Description
The chemical mechanical polishing system and the monitoring method thereof according to the present invention will be described in further detail with reference to the accompanying drawings and specific examples. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Specifically, referring to fig. 1-6, fig. 1 is a schematic diagram illustrating a structure of a chemical mechanical polishing system according to an embodiment of the present invention, fig. 2 is a schematic diagram illustrating a top view of a polishing platen according to an embodiment of the present invention, fig. 3 is a schematic diagram illustrating a bottom view of a first distance sensor on a polishing head according to an embodiment of the present invention, fig. 4 is a schematic diagram illustrating a bottom view of a plurality of first distance sensors on the polishing head according to an embodiment of the present invention, fig. 5 is a schematic diagram illustrating a cross-section of the polishing head according to an embodiment of the present invention, and fig. 6 is an exploded schematic diagram illustrating a cross-section of the.
As shown in fig. 1-6, the present embodiment provides a chemical mechanical polishing system comprising:
a polishing head 10, wherein the polishing head 10 is used for fixing a pure silicon wafer 14;
a pressurizing mechanism 11, wherein the pressurizing mechanism 11 provides pressure for the polishing head 10 to press on the upper surface of the pure silicon wafer 14;
a distance sensor, configured to detect a distance signal including the real-time thickness of the pure silicon wafer 14, and transmit the detected distance signal including the real-time thickness of the pure silicon wafer 14 to a control unit 30 for calculation, so as to obtain the real-time thickness of the pure silicon wafer 14;
the control unit 30 is electrically connected with the pressurizing mechanism 11 and the distance sensor respectively, and the control unit 30 is used for adjusting the pressure of the pressurizing mechanism 11 according to the target thickness of the pure silicon wafer 14 and the real-time thickness data of the pure silicon wafer 14;
the pressurization mechanism is located above the polishing head and fixedly connected with the polishing head, and the control unit is electrically connected with the pressurization mechanism and the distance sensor respectively.
As a non-limiting example, the pressure adjustment rule of the pressurizing mechanism can be found in the following formula:
the incoming material thickness of the pure silicon wafer-the target thickness of the pure silicon wafer-is the set pressure and the coefficient is removed;
wherein, the incoming material thickness of the pure silicon wafer refers to the initial thickness of the pure silicon wafer.
In specific implementation, the removal coefficient, that is, the linear relationship between the pressure of the polishing head 10 pressing on the upper surface of the pure silicon wafer 14 and the removal amount (the thickness to be polished) can be obtained according to an empirical formula, so as to obtain a fixed value (that is, the removal coefficient), and when the thickness of the supplied material of the pure silicon wafer is floating, the pressure to be set can be calculated according to the formula. In this embodiment, the target thickness of the silicon wafer is, for example, 775500nm, when the real-time thickness of the pure silicon wafer 14 detected by the distance sensor is 776000nm, and the initial pressure of the pressurizing mechanism 11 is 0.008MPa, the removal coefficient is 62500nm/MPa, and when the incoming thickness of the pure silicon wafer is 776100nm, the pressure needs to be increased to 0.0096MPa within the same polishing time to obtain the target thickness of the pure silicon wafer.
With continued reference to fig. 1, the distance sensor includes, for example, a first distance sensor 12 and a second distance sensor 21, the distance signals detected by the first distance sensor 12 and the second distance sensor 21 and including the real-time thickness of the pure silicon wafer 14 are transmitted to a control unit 30, and the control unit 30 calculates the real-time thickness of the pure silicon wafer 14 according to the distance difference between the first distance sensor 12 and the second distance sensor 21. In the present embodiment, the real-time thickness of the pure silicon wafer 14 needs to be measured by using the distance difference between two distance sensors, which is mainly because the inventor finds that no device is formed on the pure silicon wafer, and therefore, the material of each position of the pure silicon wafer is the same, and the reflectivity thereof is also the same, and therefore, it is not suitable to use a single sensor to measure the thickness of the pure silicon wafer.
With continued reference to fig. 2 and 3, the number of the first distance sensors 12 may be one or more. When a plurality of first distance sensors 12 are used, the first distance sensors 12 are, for example, arranged in an array or arranged in an emission shape with the center of a pure silicon wafer as an origin, which is not limited in this embodiment.
Referring to fig. 5 and 6, a pure silicon wafer adsorption pad 13 is disposed below the polishing head 10 (i.e., on a side close to the pure silicon wafer), and the pure silicon wafer adsorption pad 13 can be used for adsorbing the pure silicon wafer 14. In this embodiment, the material of the pure silicon wafer adsorption pad 13 is, for example, suede (cashmere pad), and the pure silicon wafer adsorption pad 13 is used for adsorbing the pure silicon wafer 14 and protecting the back surface of the pure silicon wafer 14 from being scratched. An internal back plate 16 may be further disposed below the polishing head 10, and a first rotating mechanism 15 may be further disposed above the polishing head 10, where the first rotating mechanism 15 connects the polishing head 10 and the internal back plate 16 and drives the polishing head 10 and the internal back plate 16 to rotate. A rubber ring 18 is further arranged between the polishing head 10 and the pure silicon sheet adsorption pad 13, and the pure silicon sheet adsorption pad 13 is adhered to the rubber ring 18. The rubber ring 18 is sleeved outside the snap ring 17, the snap ring 17 is fixedly connected with the polishing head 10, and the snap ring 17 is fixedly connected with the polishing head 10 in a bolt connection mode, for example.
Referring to fig. 2-3 and 5-6, the first distance sensor 12 may be fixed on the internal back plate 16. The first distance sensor 12 is fixed to the internal back plate 16 by, for example, snap-fitting. The first distance sensor 12 is located at the center diameter of the polishing head 10. When a plurality of first distance sensors 12 are used, the first distance sensors 12 are, for example, arranged in an array or arranged in an emission shape with the center of a pure silicon wafer as an origin, which is not limited in this embodiment.
With continued reference to FIG. 1, the chemical mechanical polishing system further includes a polishing table 20, the polishing table 20 having at least one groove disposed thereon. The grooves are, for example, stripe-shaped grooves extending from the center of the polishing platen 20 toward the edge of the polishing platen 20, and the length of the grooves is greater than the radius of the pure silicon wafer 14. The second distance sensor 21 may be fixed in the polishing table 20 while maintaining the second distance sensor 21 at the same level as the polishing table 20, i.e., the top surface of the second distance sensor 21 is flush with the top surface of the polishing table 20. During the final polishing, the second distance sensor 21 can monitor the real-time thickness of each position of the pure silicon wafer 14 as the polishing table 20 rotates.
Further, a polishing pad 22 is disposed on the polishing table 20. In this embodiment, the material of the polishing table 20 is, for example, ceramic, and the polishing pad 22 is adhered to the polishing table 20 and covers the second distance sensor 21. The flatter the surface of the polishing table 20, the more favorable the polishing uniformity. The polishing pad 22 is made of a non-woven fabric, and the surface of the polishing pad 22 has a plurality of grooves for uniformly distributing the polishing solution to different regions of the polishing pad 22, so as to perform a final polishing process on the front surface of the silicon wafer 14. The chemical mechanical polishing system further comprises a second rotating mechanism 23, wherein the second rotating mechanism 23 is used for driving the polishing table 20 and the polishing pad 22 to rotate.
As previously described, the distance sensors include a first distance sensor 12 and a second distance sensor 21, and the real-time thickness of the silicon wafer 14 can be tested by the difference in the distances between the first distance sensor 12 and the second distance sensor 21. In this embodiment, since the first distance sensor 12 and the second distance sensor 21 include the rubber ring 18, the pure silicon adsorption pad 13, the pure silicon wafer 14, and the polishing pad 22 therebetween, the real-time thickness of the pure silicon wafer 14 is obtained by subtracting the thicknesses of the rubber ring 18, the pure silicon adsorption pad 13, and the polishing pad 22 from the difference between the first distance sensor 12 and the second distance sensor 21.
FIG. 7 is a flow chart of a CMP monitoring method according to an embodiment of the invention. Referring to fig. 1-7, the present embodiment further provides a chemical mechanical polishing monitoring method, including:
step S10, pressing the pure silicon wafer 14 onto the polishing pad 22 by the polishing head 10 to polish the pure silicon wafer 14; and the number of the first and second groups,
step S20, the distance sensor detects a distance signal including the real-time thickness of the pure silicon wafer 14, and transmits the detected distance signal including the real-time thickness of the pure silicon wafer 14 to the control unit 30 for calculation, so as to obtain the real-time thickness of the pure silicon wafer 14, and the control unit 30 can adjust the pressure of the pressurizing mechanism 11 according to the target thickness of the pure silicon wafer 14 and the real-time thickness data of the pure silicon wafer 14, so that the pure silicon wafer 14 obtains a polishing morphology of the target thickness.
In the chemical mechanical polishing, the pure silicon wafer 14 is fixed on the polishing head 10, the pure silicon wafer 14 is moved to a position above the polishing table 20, the pure silicon wafer 14 is pressed onto the polishing table 20 by the polishing head 10, the surface to be polished of the pure silicon wafer 14 is contacted with the polishing pad 22 which rotates relatively, meanwhile, the polishing solution is conveyed onto the polishing pad 22, and the polishing solution is uniformly distributed on the polishing pad 22 by the centrifugal force, so that the surface of the pure silicon wafer 14 is flattened by the relative motion between the surface of the pure silicon wafer 14 and the polishing pad 22. Meanwhile, the real-time thickness of the pure silicon wafer 14 is measured by the distance difference between the first distance sensor 12 and the second distance sensor 21, wherein the real-time thickness of the pure silicon wafer 14 is the difference between the first distance sensor 12 and the second distance sensor 21 minus the thickness of the rubber ring 18, the thickness of the pure silicon wafer adsorption pad 13 and the real-time thickness of the polishing pad 22. The control unit 30 can adjust the pressure of the pressurizing mechanism 11 according to the target thickness of the pure silicon wafer 14 and the real-time thickness data of the pure silicon wafer 14, so that the pure silicon wafer 14 can obtain a polishing morphology with the target thickness.
As a non-limiting example, the pressure adjustment rule of the pressurizing mechanism can be found in the following formula:
the incoming material thickness of the pure silicon wafer-the target thickness of the pure silicon wafer-is the set pressure and the coefficient is removed;
wherein, the incoming material thickness of the pure silicon wafer refers to the initial thickness of the pure silicon wafer.
In specific implementation, the removal coefficient, that is, the linear relationship between the pressure of the polishing head 10 pressing on the upper surface of the pure silicon wafer 14 and the removal amount (the thickness to be polished) can be obtained according to an empirical formula, so as to obtain a fixed value (that is, the removal coefficient), and when the thickness of the supplied material of the pure silicon wafer is floating, the pressure to be set can be calculated according to the formula. In this embodiment, the target thickness of the silicon wafer is, for example, 775500nm, when the real-time thickness of the pure silicon wafer 14 detected by the distance sensor is 776000nm, and the initial pressure of the pressurizing mechanism 11 is 0.008MPa, the removal coefficient is 62500nm/MPa, and when the incoming thickness of the pure silicon wafer is 776100nm, the pressure needs to be increased to 0.0096MPa within the same polishing time to obtain the target thickness of the pure silicon wafer.
The chemical mechanical polishing monitoring method provided by the embodiment is suitable for a front-side Final Polishing (FP) process of a pure silicon wafer, in particular to a final polishing process of a 12-inch pure silicon wafer.
In summary, in the chemical mechanical polishing system and the chemical mechanical polishing monitoring method provided in the embodiments of the present invention, a distance signal including the real-time thickness of the pure silicon wafer is detected by a distance sensor, and the detected distance signal including the real-time thickness of the pure silicon wafer is transmitted to a control unit for calculation, so as to obtain the real-time thickness of the pure silicon wafer in the final polishing process, and the real-time thickness data of the pure silicon wafer is fed back to the control unit, and the control unit adjusts the pressure of the pressurization mechanism according to the target thickness of the pure silicon wafer and the real-time thickness data of the pure silicon wafer, so that the pure silicon wafer obtains a target polishing morphology, and the pressure of the pressurization mechanism is automatically adjusted by measuring the thickness result of the pure silicon wafer in real time, so as to achieve better pure silicon wafer flatness.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A chemical mechanical polishing system, comprising:
the polishing head is used for fixing the pure silicon wafer;
the pressurizing mechanism provides pressure for the polishing head to press on the upper surface of the pure silicon wafer;
the distance sensor is used for detecting a distance signal containing the real-time thickness of the pure silicon wafer and transmitting the detected distance signal containing the real-time thickness of the pure silicon wafer to a control unit for calculation so as to obtain the real-time thickness of the pure silicon wafer; and the number of the first and second groups,
the control unit is used for adjusting the pressure of the pressurizing mechanism according to the target thickness of the pure silicon wafer and the real-time thickness data of the pure silicon wafer;
the pressurization mechanism is located above the polishing head and fixedly connected with the polishing head, and the control unit is electrically connected with the pressurization mechanism and the distance sensor respectively.
2. The chemical mechanical polishing system of claim 1, wherein the distance sensor comprises a first distance sensor and a second distance sensor, and a distance signal including a real-time thickness of the pure silicon wafer detected by the first distance sensor and the second distance sensor is transmitted to a control unit, and the control unit calculates the real-time thickness of the pure silicon wafer from a difference in distance between the first distance sensor and the second distance sensor.
3. The chemical mechanical polishing system of claim 2, wherein the first distance sensor is plural in number.
4. The chemical mechanical polishing system of claim 2, wherein an internal backing plate is further disposed below the polishing head, and a first rotating mechanism is further disposed above the polishing head, the first rotating mechanism connecting the polishing head and the internal backing plate and rotating the polishing head and the internal backing plate.
5. The chemical mechanical polishing system of claim 4, wherein the first distance sensor is fixed to the internal backing plate.
6. The chemical mechanical polishing system of claim 2 wherein the silicon wafer chemical mechanical polishing system further comprises a polishing table having a recess disposed thereon.
7. The chemical mechanical polishing system of claim 6, wherein the second distance sensor is fixed in a recess of the polishing table, and a surface of the second distance sensor is flush with a surface of the polishing table.
8. A method for monitoring chemical mechanical polishing, comprising:
pressing a pure silicon wafer onto a polishing pad by using a polishing head to polish the pure silicon wafer; and the number of the first and second groups,
the distance sensor detects a distance signal containing the real-time thickness of the pure silicon wafer, the detected distance signal containing the real-time thickness of the pure silicon wafer is transmitted to the control unit to be calculated, the real-time thickness of the pure silicon wafer is obtained, and the control unit adjusts the pressure provided by the pressurizing mechanism to the polishing head in real time according to the target thickness of the pure silicon wafer and the real-time thickness data of the pure silicon wafer.
9. The chemical mechanical polishing monitoring method of claim 8, wherein the distance sensor comprises a first distance sensor and a second distance sensor, the distance signal including the real-time thickness of the pure silicon wafer detected by the first distance sensor and the second distance sensor is transmitted to a control unit, and the control unit detects the real-time thickness of the pure silicon wafer by a difference in distance between the first distance sensor and the second distance sensor.
10. The chemical mechanical polishing monitoring method of claim 9, wherein the thickness of the rubber ring, the adsorption pad and the polishing pad is subtracted from the difference in the distance between the first distance sensor and the second distance sensor to obtain a real-time thickness of the test pure silicon wafer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110173013.9A CN112894609A (en) | 2021-02-08 | 2021-02-08 | Chemical mechanical polishing system and chemical mechanical polishing monitoring method |
| TW110111815A TW202231405A (en) | 2021-02-08 | 2021-03-31 | System and method for chemical mechanical polishing |
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| CN202110173013.9A CN112894609A (en) | 2021-02-08 | 2021-02-08 | Chemical mechanical polishing system and chemical mechanical polishing monitoring method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113400195A (en) * | 2021-07-21 | 2021-09-17 | 北京烁科精微电子装备有限公司 | Method and system for online partition adjustment of loading and unloading pressure of polishing head |
| CN115122187A (en) * | 2022-08-11 | 2022-09-30 | 深圳西可实业有限公司 | High-efficient peripheral burnishing machine |
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| CN1554118A (en) * | 2001-06-19 | 2004-12-08 | Ӧ�ò��Ϲ�˾ | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113400195A (en) * | 2021-07-21 | 2021-09-17 | 北京烁科精微电子装备有限公司 | Method and system for online partition adjustment of loading and unloading pressure of polishing head |
| CN115122187A (en) * | 2022-08-11 | 2022-09-30 | 深圳西可实业有限公司 | High-efficient peripheral burnishing machine |
| CN115122187B (en) * | 2022-08-11 | 2023-12-12 | 深圳西可实业有限公司 | High-efficient peripheral burnishing machine |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202231405A (en) | 2022-08-16 |
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Application publication date: 20210604 |