CN106989679A - Contactless semiconductor wafer measuring thickness device - Google Patents
Contactless semiconductor wafer measuring thickness device Download PDFInfo
- Publication number
- CN106989679A CN106989679A CN201710098357.1A CN201710098357A CN106989679A CN 106989679 A CN106989679 A CN 106989679A CN 201710098357 A CN201710098357 A CN 201710098357A CN 106989679 A CN106989679 A CN 106989679A
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- China
- Prior art keywords
- test specimen
- pallet
- chip
- laser displacement
- measurement
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0691—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of objects while moving
Abstract
The invention provides a kind of contactless semiconductor wafer measuring thickness device.Including：Test specimen pallet, pallet translational leading screw, base, test specimen electric rotating machine and laser displacement sensor；Base is fixed on measurement table top, pallet translational leading screw is arranged on base, tested chip or ceramic disk are placed on test specimen pallet, test specimen pallet is connected with pallet translational leading screw, test specimen electric rotating machine, pallet translational leading screw drives test specimen pallet to move in parallel, and test specimen electric rotating machine drives the rotation of test specimen pallet；Laser displacement sensor is arranged on the top of test specimen pallet, the distance between chip on the tested chip of laser displacement sensor measurement or ceramic disk to measurement datum.The device of the embodiment of the present invention can accurately measure single-wafer automatically and stick to the thickness of more wafers on ceramic disk, the problem of solving low current semiconductor chip measurement efficiency and easy damaged wafer surface, and whole measurement process can realize full-automation.
Description
Technical field
The present invention relates to semiconductor wafer field of measuring technique, more particularly to a kind of contactless semiconductor wafer thickness measuring dress
Put.
Background technology
In the process of semi-conducting material, many work flows need the uniformity of the thickness and thickness to chip
Measure, it is sometimes desirable to independent measurement wafer thickness, it is sometimes desirable to the more wafers thickness that measurement is sticked on ceramic disk, be
Ensure measurement flexibility, current processing enterprise for the detection of wafer thickness be mostly using micrometer manual inspection one by one,
Not only detection speed is low, the precision of detection as operator is different from operating environment and produces difference, influence product
Uniformity.Meanwhile, micrometer clip wafer operations are improper to cause wafer damaging repercussions, influence product quality.
Therefore, the device that a kind of thickness to semiconductor wafer of exploitation is effectively measured is highly important.
The content of the invention
The embodiment provides a kind of contactless semiconductor wafer measuring thickness device, to realize that effectively measurement is partly led
The thickness of body chip.
To achieve these goals, this invention takes following technical scheme.
A kind of contactless semiconductor wafer measuring thickness device, including：Test specimen pallet, pallet translational leading screw, base, test specimen rotation
Rotating motor and laser displacement sensor；
The base is fixed on measurement table top, and the pallet translational leading screw is arranged on base, is tested chip or ceramics
Disk is placed on the test specimen pallet, and the test specimen pallet is connected with the pallet translational leading screw, the test specimen electric rotating machine, institute
Stating pallet translational leading screw drives the test specimen pallet to move in parallel, and the test specimen electric rotating machine drives the test specimen pallet rotation；
The laser displacement sensor is arranged on the top of the test specimen pallet, and the laser displacement sensor measurement is tested
Chip on chip or ceramic disk is the distance between to measurement datum.
Further, described device also includes：Position CCD；
The positioning CCD is arranged on the top of the test specimen pallet, gathers the image letter of the tested chip or ceramic disk
Breath, the positional information of the tested chip or ceramic disk is determined according to described image information.
Further, the top of the test specimen pallet and issue respectively setting one dot laser displacement transducer, up and down
The measurement point line of two dot laser displacement transducers is perpendicular to the test specimen holding tray surface.
Further, connected up and down between two dot laser displacement transducers by sensor roll adjustment screw mandrel, by described
The distance between described two dot laser displacement transducers up and down of sensor roll adjustment screw mandrel regulation.
Further, the test specimen pallet is cylinder, and the upper surface of the test specimen pallet sets the recessed of placing ceramic disk
Groove and the circular hole for placing chip.
Further, center of circle spaced set of multiple circular holes around the upper surface of the test specimen pallet.
Further, two dot laser displacement transducers are separately positioned on the both sides for the circular hole for placing chip up and down, utilize
The measurement difference of two laser displacement sensors up and down obtains the thickness of the chip.
It can be seen from the technical scheme that embodiments of the invention described above are provided the embodiment of the present invention it is contactless it is complete from
Dynamic wafer thickness measuring device can accurately measure single-wafer automatically and stick to the thickness of more wafers on ceramic disk, solution
Certainly current semiconductor chip measurement efficiency is low and the problem of easy damaged wafer surface.The embodiment of the present invention can be realized to semiconductor
The non-contact measurement of wafer thickness, whole measurement process can realize full-automation.
The additional aspect of the present invention and advantage will be set forth in part in the description, and these will become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, being used required in being described below to embodiment
Accompanying drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for this
For the those of ordinary skill of field, without having to pay creative labor, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of structure chart of contactless Full-automatic semiconductor wafer measurer for thickness of the embodiment of the present invention.
Fig. 2 is that single-wafer thickness measure principle schematic is directed in the embodiment of the present invention.
Fig. 3 is the measuring principle schematic diagram for adhering to wafer thickness on ceramic disk in the embodiment of the present invention.
Fig. 4 is a kind of structural representation for the test specimen pallet for placing chip in the embodiment of the present invention.
Fig. 5 is a kind of structural representation of the test specimen pallet of placing ceramic disk and chip in the embodiment of the present invention.
Embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning
Same or similar element or element with same or like function are represented to same or similar label eventually.Below by ginseng
The embodiment for examining accompanying drawing description is exemplary, is only used for explaining the present invention, and is not construed as limiting the claims.
Those skilled in the art of the present technique are appreciated that unless expressly stated, singulative " one " used herein, " one
It is individual ", " described " and "the" may also comprise plural form.It is to be further understood that what is used in the specification of the present invention arranges
Diction " comprising " refer to there is the feature, integer, step, operation, element and/or component, but it is not excluded that in the presence of or addition
Other one or more features, integer, step, operation, element, component and/or their group.It should be understood that when we claim member
Part is " connected " or during " coupled " to another element, and it can be directly connected or coupled to other elements, or can also exist
Intermediary element.In addition, " connection " used herein or " coupling " can include wireless connection or coupling.Wording used herein
"and/or" includes one or more associated any cells for listing item and all combined.
Those skilled in the art of the present technique are appreciated that unless otherwise defined, all terms used herein (including technology art
Language and scientific terminology) with the general understanding identical meaning with the those of ordinary skill in art of the present invention.Should also
Understand, those terms defined in such as general dictionary, which should be understood that, to be had and the meaning in the context of prior art
The consistent meaning of justice, and unless defined as here, will not be explained with idealization or excessively formal implication.
For ease of the understanding to the embodiment of the present invention, done below in conjunction with accompanying drawing by taking several specific embodiments as an example further
Explanation, and each embodiment does not constitute the restriction to the embodiment of the present invention.
The embodiments of the invention provide a kind of non-contact type wafer thickness measuring device, measurement semiconductor can be taken into account simultaneously
Ceramic disk adheres to the thickness of more wafers after the thickness of single-wafer in chip process, and measurement polishing, solves current
Semiconductor wafer measurement efficiency is low and the problem of easy damaged wafer surface.
The structural representation of said apparatus as shown in figure 1, including：1 test specimen pallet, 2 pallet translational leading screws, 3 bases, 4 examinations
Part electric rotating machine, laser displacement sensor, 6 positioning CCD (Charge Coupled Device, charge coupling device), 7 are passed on 5
Sensor roll adjustment leading screw, 8 times laser displacement sensors.Base is fixed on measurement table top, and pallet translational leading screw is arranged on base,
Tested chip or ceramic disk are placed on the test specimen pallet 1, the test specimen pallet 1 and the pallet translational leading screw 2, the examination
Part electric rotating machine 4 is connected, and the pallet translational leading screw 2 drives the test specimen pallet 1 to move in parallel, the test specimen electric rotating machine 4
The test specimen pallet 1 is driven to rotate.Laser displacement sensor 8 is arranged on above and below the test specimen pallet, laser displacement
Chip on the tested chip of sensor measurement or ceramic disk is the distance between to measurement datum.Positioning CCD6 is arranged on the examination
The top of part pallet 1, gathers the image information of the tested chip or ceramic disk, is determined according to described image information described tested
The positional information of chip or ceramic disk.
Chip is tested in measurement process or ceramic disk is placed on test specimen pallet, and test specimen electric rotating machine drives test specimen pallet to turn
It is dynamic, ensure that laser displacement sensor can measure optional position on test specimen pallet with pallet translational leading screw routing motion, using calmly
Position CCD6 collection wafer images carry out motion positions.
Test specimen pallet is cylinder, and the upper surface of test specimen pallet sets the groove of placing ceramic disk and places the circle of chip
Hole, depending on the size of above-mentioned circular hole is according to various sizes of chip, the size of above-mentioned groove is according to various sizes of ceramic disk
It is fixed.Single-chip thickness is obtained using laser displacement sensor measurement difference up and down, is obtained using chip and ceramic disk surface location difference
Wafer thickness on ceramic disk.Sensor roll adjustment leading screw is used to ensure that sensor measurement range is effective all the time.
Fig. 2 is that single-wafer thickness measure principle schematic is directed in the embodiment of the present invention, and measurement single-chip thickness is used
Double excitation displacement sensor mode, the distance between two laser displacement sensors are defined as L, upper laser displacement sensing
Device obtains upper wafer surface to the distance between measurement datum La, and lower laser displacement sensor obtains chip lower surface to measurement
The distance between reference plane Lb, sensor laser head positional distance datum-plane position is Ln, and calculating obtains chip measurement dot thickness S
=L-Ln*2+La+Lb).
Fig. 3 is for the measuring principle schematic diagram that wafer thickness is adhered on ceramic disk, measurement ceramics in the embodiment of the present invention
Face uses single laser displacement sensor metering system on the basis of ceramic disk during wafer thickness on disk.Ceramic card is measured respectively to arrive
Upper laser displacement sensor reference plane apart from measurement point on Lt and chip to upper laser displacement sensor reference plane apart from La,
Chip measurement dot thickness S=Lt-La is obtained so as to calculate.
In the present invention, rotated using pallet and constitute polar coordinate system with translating two frees degree, realize the fortune to test specimen pallet
Dynamic control, obtains chip position in collection image on pallet using CCD, measurement is ensured as the motion of feedback quantity controlling organization
Precision.
In the present invention, for the measurement of compatible single-chip and ceramic disk adhesion two kinds of forms of chip, design test specimen pallet was both
Different wafer sizes, and energy bearing wafer ceramic disk can be carried, simultaneously because using different measuring principles, in order to ensure sensor
All the time in effective range, two laser displacement sensors are set apart from adjustable.
By taking 4 cun of wafer thickness measurings needed for GaAs material process as an example, needed after crystal bar cutting 4 needed for measurement
Very little wafer thickness, required measurement chip is lain in 4 cun of wafer slots in a kind of test specimen pallet shown in Fig. 4, demarcation measurement
The distance of the wafer distance center wafer position is x1, x2, x3, and distance center position line is separated by 3 points of a1, a2, a3 angle
Thickness (measurement point according to actual demand can use different coordinates).Specific measurement process includes：Start measurement apparatus, Fig. 1
Middle test specimen electric rotating machine drives test specimen pallet in Fig. 1 to rotate, the ccd sensor visual field into Fig. 1, and control system foundation fetches biography
Center wafer and picture centre and sensor measurement point centre distance in sensor image, demarcation test specimen pallet, control electric rotating
Machine is rotatably assorted leading screw translation, makes measurement point (x1, a1) and sensor measurement point center superposition, reads upper laser in now Fig. 1
Displacement transducer and lower laser displacement sensor data, are calculated after the chip dot thickness according to Fig. 2 single-chip measuring principles, control
Device action processed is to next measurement point.Measurement result is exported after the completion of three measurement point thickness measures are equal, and it is default according to measurement
THICKNESS CALCULATION mode exports final wafer thickness.
Fig. 5 is a kind of structural representation of the test specimen pallet of placing ceramic disk and chip in the embodiment of the present invention.Chip glues
It is attached on ceramic disk and is polished, 1 is ceramic disk in Fig. 5,2 is chip in Fig. 5, and contrast wafer thickness is needed before and after polishing.Throw
The ceramic disk for being stained with more wafers is placed in test specimen pallet before light, setting starting measurement wafer position, measurement chip number
Mesh and chip are separated by substantially angle.Start measurement apparatus, test specimen electric rotating machine drives ceramic disk to rotate, control system timing is read
Laser displacement sensor data are taken, while judging correspondence chip measurement position using ccd sensor and recording, rotation is turned around
Afterwards, according to ceramic disk adhesion wafer thickness measuring principle in Fig. 3, calculated between chip on the basis of the measurement distance of ceramic disk space
Every wafer thickness is simultaneously exported.When needing to specifying wafer thickness to carry out remeasurement, setting specified measurement wafer position, measurement
Measurement apparatus is restarted after point position coordinates, control system control device moves to specified location and measured, and is measured
Output result afterwards.
In summary, the contactless Full-automatic wafer measurer for thickness of the embodiment of the present invention can be measured accurately automatically
Single-wafer and the thickness for sticking to more wafers on ceramic disk, solve that current semiconductor chip measurement efficiency is low and easy damaged
The problem of wafer surface.The embodiment of the present invention can realize the non-contact measurement to semiconductor wafer thickness, entirely measure
Journey can realize full-automation.
One of ordinary skill in the art will appreciate that：Accompanying drawing be module in the schematic diagram of one embodiment, accompanying drawing or
Flow is not necessarily implemented necessary to the present invention.
As seen through the above description of the embodiments, those skilled in the art can be understood that the present invention can
Realized by the mode of software plus required general hardware platform.Understood based on such, technical scheme essence
On the part that is contributed in other words to prior art can be embodied in the form of software product, the computer software product
It can be stored in storage medium, such as ROM/RAM, magnetic disc, CD, including some instructions are to cause a computer equipment
(can be personal computer, server, or network equipment etc.) performs some of each of the invention embodiment or embodiment
Method described in part.
Each embodiment in this specification is described by the way of progressive, identical similar portion between each embodiment
Divide mutually referring to what each embodiment was stressed is the difference with other embodiment.Especially for device or
For system embodiment, because it is substantially similar to embodiment of the method, so describing fairly simple, related part is referring to method
The part explanation of embodiment.Apparatus and system embodiment described above is only schematical, wherein the conduct
The unit that separating component illustrates can be or may not be it is physically separate, the part shown as unit can be or
Person may not be physical location, you can with positioned at a place, or can also be distributed on multiple NEs.Can root
Some or all of module therein is factually selected to realize the purpose of this embodiment scheme the need for border.Ordinary skill
Personnel are without creative efforts, you can to understand and implement.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art the invention discloses technical scope in, the change or replacement that can be readily occurred in,
It should all be included within the scope of the present invention.Therefore, protection scope of the present invention should be with scope of the claims
It is defined.
Claims (7)
1. a kind of contactless semiconductor wafer measuring thickness device, it is characterised in that including：Test specimen pallet, pallet translational leading screw, bottom
Seat, test specimen electric rotating machine and laser displacement sensor；
The base is fixed on measurement table top, and the pallet translational leading screw is arranged on base, and tested chip or ceramic disk are put
Put on the test specimen pallet, the test specimen pallet is connected with the pallet translational leading screw, the test specimen electric rotating machine, the support
Disk translation leading screw drives the test specimen pallet to move in parallel, and the test specimen electric rotating machine drives the test specimen pallet rotation；
The laser displacement sensor is arranged on the top of the test specimen pallet, the tested chip of laser displacement sensor measurement
Or the chip on ceramic disk is the distance between to measurement datum.
2. device according to claim 1, it is characterised in that described device also includes：Position CCD；
The positioning CCD is arranged on the top of the test specimen pallet, gathers the image information of the tested chip or ceramic disk, root
The positional information of the tested chip or ceramic disk is determined according to described image information.
3. device according to claim 1, it is characterised in that in the top of the test specimen pallet and issue and set one respectively
Individual dot laser displacement transducer, the measurement point line of two dot laser displacement transducers is flat perpendicular to the test specimen pallet up and down
Face.
4. device according to claim 3, it is characterised in that pass through sensing between two dot laser displacement transducers up and down
Device roll adjustment screw mandrel is connected, by the sensor roll adjustment screw mandrel adjust between two dot laser displacement transducers up and down away from
From.
5. device according to claim 1, it is characterised in that the test specimen pallet is cylinder, the test specimen pallet
Upper surface sets the groove of placing ceramic disk and places the circular hole of chip.
6. device according to claim 5, it is characterised in that multiple circular holes are around the upper surface of the test specimen pallet
Center of circle spaced set.
7. device according to claim 6, it is characterised in that two dot laser displacement transducers, which are separately positioned on, up and down puts
The both sides of the circular hole of chip are put, the thickness of the chip is obtained using the measurement difference of two laser displacement sensors up and down.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710098357.1A CN106989679A (en) | 2017-02-23 | 2017-02-23 | Contactless semiconductor wafer measuring thickness device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710098357.1A CN106989679A (en) | 2017-02-23 | 2017-02-23 | Contactless semiconductor wafer measuring thickness device |
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| CN106989679A true CN106989679A (en) | 2017-07-28 |
Family
ID=59414464
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| CN201710098357.1A Pending CN106989679A (en) | 2017-02-23 | 2017-02-23 | Contactless semiconductor wafer measuring thickness device |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107598763A (en) * | 2017-10-24 | 2018-01-19 | 江门市奥伦德光电有限公司 | The grinding wafer equipment and its Ginding process of a kind of more size compatibilities |
| CN109668522A (en) * | 2019-02-25 | 2019-04-23 | 上海谦视智能科技有限公司 | The online compensation measuring device and measuring method of 3D topography measurement error |
| CN109817539A (en) * | 2019-01-25 | 2019-05-28 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer measuring thickness device and wafer thickness measuring system |
| CN110842781A (en) * | 2019-11-26 | 2020-02-28 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Non-contact measurement method and device |
| CN110926349A (en) * | 2019-11-12 | 2020-03-27 | 中国电子科技集团公司第十一研究所 | Epitaxial layer thickness testing tool and method for testing epitaxial layer thickness |
| CN112484680A (en) * | 2020-12-02 | 2021-03-12 | 杭州中为光电技术有限公司 | Sapphire wafer positioning and tracking method based on circle detection |
| CN112894609A (en) * | 2021-02-08 | 2021-06-04 | 上海新昇半导体科技有限公司 | Chemical mechanical polishing system and chemical mechanical polishing monitoring method |
| CN114234820A (en) * | 2021-12-08 | 2022-03-25 | 苏州肯美特设备集成有限公司 | Detection device for detecting thickness of semiconductor wafer |
| CN114812411A (en) * | 2022-05-16 | 2022-07-29 | 泰州汇品不锈钢有限公司 | Equipment for measuring thickness of blue by laser |
| CN116448027A (en) * | 2023-06-16 | 2023-07-18 | 浙江晶盛机电股份有限公司 | Wafer measurement system and wafer measurement method |
| CN117207056A (en) * | 2023-11-07 | 2023-12-12 | 苏州博宏源机械制造有限公司 | High-precision wafer laser thickness measuring device and method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002048526A (en) * | 2000-08-01 | 2002-02-15 | Toshiba Ceramics Co Ltd | Instrument for measuring angle of sample, and method of measuring thickness of diffusion layer of semiconductor wafer using the same |
| CN101769721A (en) * | 2010-02-03 | 2010-07-07 | 隆达电子股份有限公司 | Optical measurement device |
| CN102918640A (en) * | 2010-05-27 | 2013-02-06 | 松下电器产业株式会社 | Plasma processing device |
| US9062964B1 (en) * | 2012-05-07 | 2015-06-23 | Clearwater Paper Corporation | Laser caliper measurement of paper material |
| CN105258654A (en) * | 2015-10-29 | 2016-01-20 | 江苏吉星新材料有限公司 | Non-contact high-precision wafer surface measuring instrument and measuring calculation method thereof |
| CN106338236A (en) * | 2016-09-28 | 2017-01-18 | 天津华海清科机电科技有限公司 | Film thickness measuring apparatus and system provided with film thickness measuring apparatus and used for manufacturing wafers |
-
2017
- 2017-02-23 CN CN201710098357.1A patent/CN106989679A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002048526A (en) * | 2000-08-01 | 2002-02-15 | Toshiba Ceramics Co Ltd | Instrument for measuring angle of sample, and method of measuring thickness of diffusion layer of semiconductor wafer using the same |
| CN101769721A (en) * | 2010-02-03 | 2010-07-07 | 隆达电子股份有限公司 | Optical measurement device |
| CN102918640A (en) * | 2010-05-27 | 2013-02-06 | 松下电器产业株式会社 | Plasma processing device |
| US9062964B1 (en) * | 2012-05-07 | 2015-06-23 | Clearwater Paper Corporation | Laser caliper measurement of paper material |
| CN105258654A (en) * | 2015-10-29 | 2016-01-20 | 江苏吉星新材料有限公司 | Non-contact high-precision wafer surface measuring instrument and measuring calculation method thereof |
| CN106338236A (en) * | 2016-09-28 | 2017-01-18 | 天津华海清科机电科技有限公司 | Film thickness measuring apparatus and system provided with film thickness measuring apparatus and used for manufacturing wafers |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107598763A (en) * | 2017-10-24 | 2018-01-19 | 江门市奥伦德光电有限公司 | The grinding wafer equipment and its Ginding process of a kind of more size compatibilities |
| CN109817539A (en) * | 2019-01-25 | 2019-05-28 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer measuring thickness device and wafer thickness measuring system |
| CN109668522A (en) * | 2019-02-25 | 2019-04-23 | 上海谦视智能科技有限公司 | The online compensation measuring device and measuring method of 3D topography measurement error |
| CN110926349B (en) * | 2019-11-12 | 2021-09-03 | 中国电子科技集团公司第十一研究所 | Epitaxial layer thickness testing tool and method for testing epitaxial layer thickness |
| CN110926349A (en) * | 2019-11-12 | 2020-03-27 | 中国电子科技集团公司第十一研究所 | Epitaxial layer thickness testing tool and method for testing epitaxial layer thickness |
| CN110842781A (en) * | 2019-11-26 | 2020-02-28 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Non-contact measurement method and device |
| CN112484680B (en) * | 2020-12-02 | 2022-06-03 | 杭州中为光电技术有限公司 | Sapphire wafer positioning and tracking method based on circle detection |
| CN112484680A (en) * | 2020-12-02 | 2021-03-12 | 杭州中为光电技术有限公司 | Sapphire wafer positioning and tracking method based on circle detection |
| CN112894609A (en) * | 2021-02-08 | 2021-06-04 | 上海新昇半导体科技有限公司 | Chemical mechanical polishing system and chemical mechanical polishing monitoring method |
| CN114234820A (en) * | 2021-12-08 | 2022-03-25 | 苏州肯美特设备集成有限公司 | Detection device for detecting thickness of semiconductor wafer |
| CN114812411A (en) * | 2022-05-16 | 2022-07-29 | 泰州汇品不锈钢有限公司 | Equipment for measuring thickness of blue by laser |
| CN116448027A (en) * | 2023-06-16 | 2023-07-18 | 浙江晶盛机电股份有限公司 | Wafer measurement system and wafer measurement method |
| CN116448027B (en) * | 2023-06-16 | 2023-10-13 | 浙江晶盛机电股份有限公司 | Wafer measurement system and wafer measurement method |
| CN117207056A (en) * | 2023-11-07 | 2023-12-12 | 苏州博宏源机械制造有限公司 | High-precision wafer laser thickness measuring device and method |
| CN117207056B (en) * | 2023-11-07 | 2024-01-23 | 苏州博宏源机械制造有限公司 | High-precision wafer laser thickness measuring device and method |
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