CN110926349B - Epitaxial layer thickness testing tool and method for testing epitaxial layer thickness - Google Patents
Epitaxial layer thickness testing tool and method for testing epitaxial layer thickness Download PDFInfo
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- CN110926349B CN110926349B CN201911101582.1A CN201911101582A CN110926349B CN 110926349 B CN110926349 B CN 110926349B CN 201911101582 A CN201911101582 A CN 201911101582A CN 110926349 B CN110926349 B CN 110926349B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
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Abstract
The invention discloses an epitaxial layer thickness testing tool and a method for testing the thickness of an epitaxial layer. Epitaxial layer thickness test fixture includes: a base having a first through passage; the first pressing piece is suitable for being embedded in the first through channel, a background piece groove and a first circular groove with the radius of R1 are arranged on one side, away from the base, of the first pressing piece at intervals, the first pressing piece is provided with a second through channel and a third through channel, the second through channel is semicircular and penetrates through the bottom wall of the first circular groove, the third through channel penetrates through the bottom wall of the background piece groove, and orthographic projections of the second through channel and the third through channel on the base are located in the first through channel. The invention can ensure that the sample and the background slice are positioned on the same horizontal plane, thereby improving the testing precision, in addition, the background slice groove can be used for limiting the background slice, and the first circular groove can be used for limiting the sample, thereby limiting the sliding of the sample and the background slice, and avoiding the condition of scratching the sample and the background slice.
Description
Technical Field
The invention relates to the technical field of infrared detectors, in particular to an epitaxial layer thickness testing tool and an epitaxial layer thickness testing method thereof.
Background
The development of infrared detection technology has a very long history, and the application field is quite wide and important. The HgCdTe material is prepared by mixing HgTe of negative forbidden band and CdTe of positive forbidden band, and is a (HgTe)1-x (CdTe) x binary compound material with direct band gap. By adjusting the component x of the material, the photon wavelength corresponding to the forbidden band width of the HgCdTe material can cover the whole infrared band. For the mercury cadmium telluride epitaxial layer, the control of the thickness of the epitaxial layer is important for the influence of the subsequent process. The uniformity of the thickness is well controlled, and the preparation method is the basis for realizing the preparation of the high-performance mercury cadmium telluride infrared focal plane detector. Before the HgCdTe chip and the reading circuit are interconnected, the epitaxial layer is ground and polished to ensure the flatness of the epitaxial layer, and the thickness of the epitaxial layer is accurately measured.
In the related art, the thickness of the mercury cadmium telluride epitaxial layer is usually measured by the infrared absorption spectrum of the material, and a plurality of problems exist in the test process: due to the limitation of the moving range of the sample stage, only a part of range of the 4-inch sample can be tested, and the test result is incomplete; when in test, the background film is placed on the sample and is not on the same horizontal plane with the sample, the maximum value of the infrared energy has deviation, and the maximum value has certain influence on the test result; the sample is not fixed during testing, and can move during testing and easily slide to cause the loss of splinters.
Disclosure of Invention
The embodiment of the invention provides an epitaxial layer thickness testing tool and a method for testing the thickness of an epitaxial layer, which are used for solving the problems of complex test process and poor test effect of a sample in the prior art.
The embodiment of the invention provides an epitaxial layer thickness testing tool, which comprises:
a base having a first through passage;
the first pressing piece is suitable for being embedded in the first through channel, one side, far away from the base, of the first pressing piece is provided with a background piece groove and a first circular groove with the radius of R1, the first pressing piece is provided with a second through channel and a third through channel, the second through channel is semicircular and penetrates through the bottom wall of the first circular groove, the third through channel penetrates through the bottom wall of the background piece groove, and orthographic projections of the second through channel and the third through channel on the base are located in the first through channel.
According to some embodiments of the invention, the R1 satisfies: r1 is less than or equal to 2 inches and less than or equal to 2.5 inches.
According to some embodiments of the present invention, the wall surface of the first through channel includes a first arc segment, a second arc segment, a first straight segment, a third arc segment, a second straight segment, and a fourth arc segment, which are sequentially connected to each other, the first arc segment and the third arc segment are located on the same circle, and the second arc segment, the first straight segment, the second straight segment, and the fourth arc segment are located on the same semicircle.
In some embodiments of the invention, the first preform comprises:
the connecting part is provided with a first circular groove, and the outer peripheral wall of the connecting part comprises a fifth circular arc section and a third straight line section which are sequentially connected end to end;
embedding portion, embedding portion is suitable for to inlay and locates in the first passageway that link up, the periphery wall of embedding portion includes end to end consecutive sixth circular arc section and seventh circular arc section, sixth circular arc section is followed fifth circular arc section extend and with fifth circular arc section connects, seventh circular arc section is followed first circular arc section extend and with the laminating of first circular arc section.
Furthermore, the connecting portion is provided with a flange, one side of the flange is connected with the connecting portion, the other side of the flange extends towards the base, the flange surrounds the second through channel, and the flange is suitable for extending into the first through channel.
In some embodiments of the present invention, at least one of the first circular arc segment and the third circular arc segment is provided with a first supporting piece, one side of the first supporting piece is connected with a wall surface of the first through channel, and the other side of the first supporting piece extends toward the inside of the first through channel.
According to some embodiments of the invention, a second support piece is provided in the third through-channel, one side of the second support piece is connected to a wall surface of the third through-channel, and the other side of the second support piece extends toward the inside of the third through-channel.
According to some embodiments of the invention, the tool further comprises:
the second pressing piece is suitable for being embedded in the base, a second circular groove with the radius of R2 is formed in one side, away from the base, of the second pressing piece, the second pressing piece is provided with a circular fourth through channel, the fourth through channel penetrates through the bottom wall of the second circular groove, and the orthographic projection of the fourth through channel on the base is located in the first through channel.
Further, R2 satisfies: r2 is more than or equal to 1.5 inches and less than or equal to 1.6 inches.
The embodiment of the invention also provides a method for testing the thickness of the epitaxial layer by using the epitaxial layer thickness testing tool, wherein the epitaxial layer thickness testing tool is the epitaxial layer thickness testing tool, and the method comprises the following steps:
embedding the first pressing sheet in the first through channel;
placing a sample into the first circular groove of the first press sheet,
placing a background sheet into a background sheet groove of the first pressing sheet;
illuminating the sample and the background sheet with a beam of a Fourier infrared spectrometer;
rotating the sample, and irradiating the sample by using the light beam of the Fourier infrared spectrometer;
and analyzing the measurement data of the Fourier infrared spectrometer, and calculating the thickness of the epitaxial layer on the sample.
By adopting the embodiment of the invention, the background sheet can be placed in the background sheet groove, the sample to be tested is placed in the first circular groove, so that the sample and the background sheet can be positioned on the same horizontal plane, the light beam error reaching the background sheet and the sample in the testing process can be ensured to be small, the testing precision can be further improved, in addition, the background sheet groove can be used for limiting the background sheet, the first circular groove can be used for limiting the sample, the sliding of the sample and the background sheet can be limited, and the condition that the sample and the background sheet are scratched can be avoided.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic structural diagram of an epitaxial layer thickness testing tool in an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an epitaxial layer thickness testing tool in an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a base of an epitaxial layer thickness test fixture in an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a base of an epitaxial layer thickness test fixture in an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a first preform of an epitaxial layer thickness testing tool according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a first preform of an epitaxial layer thickness test tool in an embodiment of the invention.
Reference numerals:
the test fixture 1 is provided with a test fixture,
a base 10, a first through passage 100, a first arc segment 101, a second arc segment 102, a first straight segment 103, a third arc segment 104, a second straight segment 105, a fourth arc segment 106, a first supporting piece 110,
the first pressing piece 20, the first circular groove 201, the second through channel 202, the background piece groove 203, the third through channel 204, the connecting portion 210, the fifth circular arc segment 211, the third straight segment 212, the embedding portion 220, the sixth circular arc segment 221 and the seventh circular arc segment 222.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
As shown in fig. 1-2, an embodiment of the present invention provides an epitaxial layer thickness testing tool 1, including: a base 10 and a first pressing piece 20.
As shown in fig. 3 and 4, the base 10 has a first through passage 100, and the first through passage 100 penetrates the base 10. The first pressing piece 20 is adapted to be embedded in the first through passage 100. It will be appreciated that at least a portion of the first pressing plate 20 may extend into the first through passage 100 to assemble the first pressing plate 20 with the base 10. The side of the first pressing piece 20 far away from the base 10 (after the first pressing piece 20 is assembled with the base 10, the side of the first pressing piece 20 far away from the base 10) is provided with a background piece groove 203 and a first circular groove 201 with the radius of R1 which are arranged at intervals. The background sheet groove 203 is used for placing a background sheet, and the background sheet is a substrate piece without an epitaxial layer, such as a silicon substrate. The first circular groove 201 is used for placing a sample with the radius of R1, wherein the sample is a substrate provided with an epitaxial layer, such as a silicon sample with a mercury cadmium telluride film extending outwards.
As shown in fig. 5 and 6, the first presser plate 20 has a second through passage 202 and a third through passage 204, the second through passage 202 is semicircular and penetrates the bottom wall of the first circular groove 201, the third through passage 204 penetrates the bottom wall of the back plate groove 203, and orthographic projections of the second through passage 202 and the third through passage 204 on the base 10 are both located in the first through passage 100.
By adopting the embodiment of the invention, the background sheet can be placed in the background sheet groove 203, the sample to be tested is placed in the first circular groove 201, so that the sample and the background sheet can be positioned on the same horizontal plane, the light beam error reaching the background sheet and the sample in the testing process can be ensured to be small, the testing precision can be further improved, in addition, the background sheet groove 203 can be used for limiting the background sheet, the first circular groove 201 can be used for limiting the sample, and the sliding of the sample and the background sheet can be limited, so that the condition that the sample and the background sheet are scratched can be avoided.
On the basis of the above-described embodiment, various modified embodiments are further proposed, and it is to be noted herein that, in order to make the description brief, only the differences from the above-described embodiment are described in the various modified embodiments.
According to some embodiments of the invention, R1 satisfies: r1 is less than or equal to 2 inches and less than or equal to 2.5 inches.
As shown in fig. 3 and 4, according to some embodiments of the present invention, the wall surface of the first through channel 100 includes a first arc segment 101, a second arc segment 102, a first straight segment 103, a third arc segment 104, a second straight segment 105, and a fourth arc segment 106 connected end to end in sequence, the first arc segment 101 and the third arc segment 104 are located on the same circle, and the second arc segment 102, the first straight segment 103, the second straight segment 105, and the fourth arc segment 106 are located on the same semicircle.
It can be understood that the first arc segment 101 and the third arc segment 104 can be two segments on a circle, and the first arc segment 101 and the third arc segment 104 are arranged corresponding to the second pressing piece, and can be used for testing the thickness of the silicon-based tellurium-cadmium-mercury material film with the diameter of 3 inches. The second arc segment 102, the first straight segment 103, the second straight segment 105 and the fourth arc segment 106 can be four segments on a certain semicircle, and the second arc segment 102, the first straight segment 103, the second straight segment 105 and the fourth arc segment 106 are arranged corresponding to the first pressing piece 20 and can be used for testing the thickness of a silicon-based tellurium-cadmium-mercury material film with the diameter of 4 inches.
Therefore, the base 10 can be suitable for the first pressing piece 20 and the second pressing piece, can be used for testing the thickness of a silicon-based HgCdTe material film with the diameter of 3 inches, and can also be used for testing the thickness of a silicon-based HgCdTe material film with the diameter of 4 inches.
As shown in fig. 5 and 6, in some embodiments of the present invention, the first pressing piece 20 includes: a connecting portion 210 and an embedding portion 220. Connecting portion 210 is equipped with first circular recess 201, and the periphery wall of connecting portion 210 includes end to end fifth circular arc section 211 and third straightway 212 consecutive. Embedding portion 220 is suitable for to inlay and locates in first through-passage 100, and embedding portion 220 includes end to end consecutive sixth circular arc section 221 and seventh circular arc section 222, and sixth circular arc section 221 extends and is connected with fifth circular arc section 211 along fifth circular arc section 211, and seventh circular arc section 222 extends and laminates with first circular arc section 101 along first circular arc section 101. With this arrangement, the stability of the assembly of the first presser plate 20 and the base 10 can be secured.
Further, the connecting portion 210 is provided with a flange, one side of the flange is connected to the connecting portion 210, the other side of the flange extends toward the base 10, the flange is disposed around the second through passage 202, and the flange is adapted to extend into the first through passage 100. With this arrangement, the stability of the assembly of the first presser plate 20 and the base 10 can be secured.
As shown in fig. 3 and 4, in some embodiments of the present invention, at least one of the first arc segment 101 and the third arc segment 104 is provided with a first supporting sheet 110, one side of the first supporting sheet 110 is connected to the wall surface of the first through-channel 100, and the other side of the first supporting sheet 110 extends toward the inside of the first through-channel 100. Thus, the first supporting piece 110 may be used to support the first pressing piece 20.
As shown in fig. 6, according to some embodiments of the present invention, a second supporting piece is disposed in the third through-channel 204, one side of the second supporting piece is connected to a wall surface of the third through-channel 204, and the other side of the second supporting piece extends toward the inside of the third through-channel 204. Thus, the second support sheet may be used to support a background sheet.
According to some embodiments of the invention, the tool 1 may further comprise: the second pressing sheet is suitable for being embedded in the base 10, a second circular groove with the radius of R2 is formed in one side, away from the base 10, of the second pressing sheet, the second pressing sheet is provided with a circular fourth through channel, the fourth through channel penetrates through the bottom wall of the second circular groove, and the orthographic projection of the fourth through channel on the base 10 is located in the first through channel 100.
Further, R2 satisfies: r2 is more than or equal to 1.5 inches and less than or equal to 1.6 inches.
The embodiment of the invention also provides a method for testing the thickness of the epitaxial layer by using the epitaxial layer thickness testing tool, wherein the epitaxial layer thickness testing tool is the epitaxial layer thickness testing tool, and the method comprises the following steps:
embedding the first pressing sheet in the first through channel;
the sample was placed in the first circular groove of the first pellet,
placing a background sheet into a background sheet groove of the first pressing sheet;
irradiating the sample and the background sheet by using a light beam of a Fourier infrared spectrometer;
rotating the sample, and irradiating the sample by using a light beam of a Fourier infrared spectrometer;
and analyzing the measurement data of the Fourier infrared spectrometer, and calculating the thickness of the epitaxial layer on the sample.
The fourier infrared spectrometer tests on the principle that when a beam of infrared light of different photon energies passes through a semiconductor sample, the sample is transparent to photons less than the energy gap E0 and has some absorption for photons greater than E0. The transmitted sample signal is received by a detector to obtain transmittance at various infrared photon energies. The method comprises the steps of measuring the components and cut-off wavelength of an epitaxial material by using an empirical formula through measuring a transmittance curve of the material by using the relationship between the components of a sample material and the forbidden band width and the relationship between the forbidden band width and the material absorption coefficient, and determining the thickness of an epitaxial layer by using interference fringes formed by light passing through the epitaxial layer.
By adopting the embodiment of the invention, the background sheet can be placed in the background sheet groove, the sample to be tested is placed in the first circular groove, so that the sample and the background sheet can be positioned on the same horizontal plane, the light beam error reaching the background sheet and the sample in the testing process can be ensured to be small, the testing precision can be further improved, in addition, the background sheet groove can be used for limiting the background sheet, the first circular groove can be used for limiting the sample, the sliding of the sample and the background sheet can be limited, and the condition that the sample and the background sheet are scratched can be avoided.
The following describes in detail a method for testing the thickness of the epitaxial layer by using the epitaxial layer thickness testing tool 1 according to an embodiment of the present invention. It is to be understood that the following description is illustrative only and is not intended to be in any way limiting. All similar structures and similar variations thereof adopted by the invention are intended to fall within the scope of the invention.
The epitaxial layer thickness test tool 1 according to the embodiment of the present invention includes a base 10 and a first pressing piece 20, the base 10 may be configured with reference to fig. 3 to 4, where the unit of the dimension indicated in the figures is mm, and the first pressing piece 20 may be configured with reference to fig. 5 to 6, where the unit of the dimension indicated in the figures is mm. The epitaxial layer thickness testing tool can be used for testing the thickness of a 4-inch silicon-based tellurium-cadmium-mercury film, and the method for testing the thickness of the epitaxial layer specifically comprises the following steps:
step A: assembling the first wafer to the base;
and B: placing a background sheet into the background sheet groove, and placing a sample with the diameter of 4 inches into the first circular groove;
and C: adjusting the light beam of the Fourier infrared spectrometer to the position of a background sheet, and measuring the background infrared absorption spectrum;
step D: testing a part of sample at a second through channel which can allow infrared light to penetrate by using measurement software, and generating an excel table of the thickness surface distribution of the part of sample after software calculation;
step E: rotating the sample to move the other part of the sample to a second through channel which can transmit infrared light;
step F: testing another part of samples by using measurement software, and generating an excel table of the thickness surface distribution of the part of samples after software calculation;
step G: and combining the two excel tables to obtain a final silicon-based tellurium-cadmium-mercury film thickness surface distribution diagram with the diameter of 4 inches.
Due to the limitation of the moving range of the sample stage, the thickness of the 4-inch silicon-based tellurium-cadmium-mercury film can be tested only by two parts. The method relieves the limitation that the original 3-inch sample table can only test a partial area of a 4-inch sample. And the background piece and the sample are ensured to be positioned on the same horizontal plane during testing, and errors caused by different infrared spot energies due to different heights are reduced. In addition, due to the fact that the first circular groove is fixed, testing accuracy is improved, and the risk of splintering is reduced.
It should be noted that the above-mentioned embodiments are only preferred embodiments of the present invention, and are not intended to limit the present invention, and those skilled in the art can make various modifications and changes. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Furthermore, in the description herein, reference to the description of the terms "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (9)
1. The utility model provides an epitaxial layer thickness test fixture which characterized in that includes:
a base having a first through passage;
the first pressing sheet is suitable for being embedded in the first through channel, one side, away from the base, of the first pressing sheet is provided with background sheet grooves arranged at intervals and a first circular groove with the radius of R1, the first pressing sheet is provided with a second through channel and a third through channel, the second through channel is semicircular and penetrates through the bottom wall of the first circular groove, the third through channel penetrates through the bottom wall of the background sheet groove, and orthographic projections of the second through channel and the third through channel on the base are located in the first through channel;
the first pressing sheet includes:
the connecting part is provided with a first circular groove, and the outer peripheral wall of the connecting part comprises a fifth circular arc section and a third straight line section which are sequentially connected end to end;
embedding portion, embedding portion is suitable for to inlay and locates in the first passageway that link up, the periphery wall of embedding portion includes end to end consecutive sixth circular arc section and seventh circular arc section, sixth circular arc section is followed fifth circular arc section extend and with fifth circular arc section connects, seventh circular arc section is followed first circular arc section extend and with the laminating of first circular arc section.
2. The tool according to claim 1, wherein R1 satisfies: r1 is less than or equal to 2 inches and less than or equal to 2.5 inches.
3. The tool according to claim 1, wherein the wall surface of the first through channel comprises a first circular arc section, a second circular arc section, a first straight line section, a third circular arc section, a second straight line section and a fourth circular arc section which are sequentially connected end to end, the first circular arc section and the third circular arc section are located on the same circle, and the second circular arc section, the first straight line section, the second straight line section and the fourth circular arc section are located on the same semicircle.
4. The tooling of claim 1, wherein the connecting portion is provided with a flange, one side of the flange is connected with the connecting portion, the other side of the flange extends towards the base, the flange is arranged around the second through passage, and the flange is adapted to extend into the first through passage.
5. The tool according to claim 3, wherein at least one of the first arc segment and the third arc segment is provided with a first support piece, one side of the first support piece is connected with the wall surface of the first through channel, and the other side of the first support piece extends towards the inside of the first through channel.
6. The tooling of claim 1, wherein a second support sheet is arranged in the third through channel, one side of the second support sheet is connected with the wall surface of the third through channel, and the other side of the second support sheet extends towards the inside of the third through channel.
7. The tooling of claim 1, further comprising:
the second pressing piece is suitable for being embedded in the base, a second circular groove with the radius of R2 is formed in one side, away from the base, of the second pressing piece, the second pressing piece is provided with a circular fourth through channel, the fourth through channel penetrates through the bottom wall of the second circular groove, and the orthographic projection of the fourth through channel on the base is located in the first through channel.
8. The tool according to claim 7, wherein R2 satisfies: r2 is more than or equal to 1.5 inches and less than or equal to 1.6 inches.
9. A method for testing the thickness of an epitaxial layer by using an epitaxial layer thickness testing tool, wherein the epitaxial layer thickness testing tool is the epitaxial layer thickness testing tool according to any one of claims 1 to 8, and the method comprises the following steps:
embedding the first pressing sheet in the first through channel;
placing a sample into the first circular groove of the first press sheet,
placing a background sheet into a background sheet groove of the first pressing sheet;
illuminating the sample and the background sheet with a beam of a Fourier infrared spectrometer;
rotating the sample, and irradiating the sample by using the light beam of the Fourier infrared spectrometer;
and analyzing the measurement data of the Fourier infrared spectrometer, and calculating the thickness of the epitaxial layer on the sample.
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| CN114739300A (en) * | 2022-03-29 | 2022-07-12 | 上海优睿谱半导体设备有限公司 | Method for measuring epitaxial layer thickness of epitaxial wafer |
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